CN101526759A - Exposure unit - Google Patents

Exposure unit Download PDF

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Publication number
CN101526759A
CN101526759A CNA2009101297122A CN200910129712A CN101526759A CN 101526759 A CN101526759 A CN 101526759A CN A2009101297122 A CNA2009101297122 A CN A2009101297122A CN 200910129712 A CN200910129712 A CN 200910129712A CN 101526759 A CN101526759 A CN 101526759A
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China
Prior art keywords
light
exposure
optical system
projection optical
liquid
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CNA2009101297122A
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CN101526759B (en
Inventor
西永寿
引间郁雄
丰田光纪
中川正弘
萩原恒幸
水野恭志
北尚宪
谷津修
江村望
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Nikon Corp
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Nikon Corp
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Abstract

The present invention provides an exposure unit which exposes the substrate by the radiation of exposing light to the substrate, which includes: a light projection system and a measuring device having a light passing part arranged at the side of the light projection system and a light receiver the exposing light passing through the light passing part of the light projection system. The light receiver of the measuring device receives the exposing light passing through the light passing part and the light projection system.

Description

Exposure device
(the application is to be the scheme application of 200480029973.2 Chinese patent application in the application number that on April 12nd, 2006 submitted to.)
Technical field
The present invention relates to be formed on graph transfer printing on the mask to substrate and with the exposure device and the exposure method of base plate exposure with used the device making method of this exposure device.
Background technology
In the photo-mask process that all can be provided with usually as 1 of the manufacturing process of microdevices such as semiconductor element, liquid crystal display cells, camera head (CCD (chargeCoupled Device) etc.), thin-film head; use is to the substrate (being coated with the semiconductor wafer or the glass plate of photoresist) as exposure object; projection exposure be formed on mask or the reticle mask (below; general name they the time, be called mask) the exposure device of reduced image of figure.In recent years, the reduced projection exposure device (so-called stepping exposure device) of substep repetitive mode or the exposure devices of substep scan mode of using more.
Described stepping exposure device, it is following exposure device, be about to substrate-placing on the substrate objective table that moves two-dimensionally freely, make the substrate stepping, repeat the action that reduced image each shooting area on substrate with the figure of mask exposes in the lump then successively by this substrate objective table.In addition, the exposure device of substep scan mode, it is following exposure device, promptly expose rayed under the state on the mask in pulse with slit-shaped, one side make mounting the mask objective table of mask with mounting substrate the substrate objective table with respect to projection optical system mutually mutually synchronization move, the part that one side will be formed on the figure on the mask is transferred on the shooting area of substrate one by one, when the transfer printing for the figure of 1 shooting area finishes, make the substrate stepping, the shooting area at other carries out the transfer printing of figure then.
In addition, these exposure devices have a plurality of optical sensors (light receiver) that receive exposure light via projection optical system, and according to the output of these optical sensors, carry out the adjustment of various mechanical aspects and the adjustment of optics aspect, perhaps determine the exercises condition, thereby the exposure actions when making the exposure of carrying out substrate in fact is the most perfect.For example, on the substrate objective table, be provided with the exposure sensor of the exposure (light quantity) that is used for the exposure light that instrumentation has passed through the irregular illumination unevenness sensor of the illumination irregular (light quantity distribution) of exposure light of projection optical system or instrumentation integration light quantity and instrumentation has passed through projection optical system.For such illumination unevenness sensor, for example open flat 08-316133 communique the spy, in addition,, for example in the world discloses No. 01/008205 communique, be disclosed respectively for the exposure sensor.
In addition, in recent years,, require the further high-resolutionization of projection optical system in order to tackle the further highly integrated of component graphics.The exposure wavelength that uses is short more, and the numerical aperture of projection optical system is big more, and the exploring degree of projection optical system is just high more.Therefore, the employed exposure wavelength of exposure device is the short wavelengthization year by year, and the numerical aperture of projection optical system is also increasing.And now the exposure wavelength of main flow is the 248nm of KrF excimer laser, but the 193nm of the shorter ArF excimer laser of wavelength also is practical.In addition, when exposing, depth of focus (DOF) and exploring degree no less important.Exploring degree R and depth of focus δ use following formulate respectively.
R＝k 1·λ/NA …(1)
δ＝±k 2·λ/NA 2…(2)
At this, λ is an exposure wavelength, and NA is the numerical aperture of projection optical system, k 1, k 2It is technological coefficient.According to (1) formula, (2) formula, can understand, when in order to improve exploring degree R, and shorten exposure wavelength lambda, when increasing numerical aperture NA then, depth of focus δ narrows down.
If it is narrow that depth of focus becomes, just be difficult to make the image planes of substrate surface and projection optical system to match, the focusing nargin deficiency in the time of might exposure actions occurring.So, as shortening exposure wavelength in fact, and enlarge the method for depth of focus, the international disclosed immersion method of communique that discloses No. 99/49504 has for example been proposed.This immersion method, be that liquid such as water or organic solvent fill up between the following and substrate surface of projection optical system, and the exposure light wavelength of utilization in liquid is that (n is a liquid refractive index to airborne 1/n, normally about 1.2～1.6) situation improves the exploring degree, simultaneously depth of focus is enlarged about n times method.
; because described optical sensor (light receiver); light transmissive portion with image planes side of the projection optical system of being configured in; and via this light transmissive portion reception light; therefore when because the uses of immersion method etc. make the numerical aperture increase of projection optical system; and when the incident angle (outermost light and optical axis angulation) of exposure light increased, the diffusion of the light that penetrates from light transmissive portion also became greatly, can not receive light well.
Summary of the invention
The present invention implements in view of described problem, its purpose is, even if provide the numerical aperture of projection optical system to increase, also can carry out various instrumentations accurately, particularly under the situation of the exposure method that has adopted liquid immersion type, also can carry out exposure device and the exposure method and the device making method that has used this exposure device of various instrumentations well.
In addition, the present invention also aims to, exposure device and exposure method and device making method with the optical receiver that can receive the light that has passed through projection optical system well are provided.
In order to solve described problem, the present invention has adopted the corresponding following formation with Fig. 1～Figure 45 shown in the example.But the parenthesized label that each important document is indicated is the illustration of this important document, is not to limit each important document.
According to the 1st sample attitude of the present invention, a kind of exposure device is provided, be radiated at via liquid that substrate (W, P) is gone up and, wherein, possess: projection optical system (PL) by the light that will expose the exposure device (EX) of described base plate exposure; And measuring device (27,270), it has the light transmissive portion (31,32,271) of the image planes side that is located at described projection optical system, and the optical receiver (36,37,276,290) that receives the exposure light that has passed through described projection optical system via this light transmissive portion, the optical receiver of described measuring device, between described projection optical system and described light transmissive portion, do not have under the state of liquid, receive the exposure light that has passed through described light transmissive portion and projection optical system.Described measuring device can be irradiation unevenness sensor, exposure sensor or an aerial image measuring device.
According to this invention, providing under the state of liquid in image planes side not to projection optical system, the exposure light that has passed through projection optical system is received by the optical receiver of measuring device via the light transmissive portion of the image planes side that is configured in projection optical system.
According to the 2nd sample attitude of the present invention, a kind of exposure device is provided, be mapped to that substrate (W, P) is gone up and, wherein, possess: projection optical system (PL) by the illumination that will expose the exposure device (EX) of described base plate exposure; And measuring device (40,50,60,70,270), it has the light transmissive portion (31 of the image planes side that is configured in described projection optical system, 44,56,271), optical receiver (36,42,53,282), and optically focused parts (41,45,52,57,62,71,276), wherein, exposure light from described projection optical system incides light transmissive portion (31,44,56,271), optically focused parts (41,45,52,57,62,71,276) be used to make light to incide optical receiver from this light transmissive portion, described optically focused parts, so that from the exposure light of described projection optical system not by inciding the mode on the described optically focused parts in the gas, be configured between described light transmissive portion and the described optical receiver.
According to this invention, among the exposure light from projection optical system, the light that has seen through light transmissive portion is not by inciding in the gas on the optically focused parts and by optically focused.Moreover, for in the mode by gas not with light from light transmissive portion guiding optically focused parts, several different methods is arranged, light transmissive portion and optically focused parts can be bonded together, perhaps, also can be with the medium of the photopermeability beyond the gas, for example, liquid, supercritical fluid, paste, solid for example are filled between light transmissive portion and the optically focused parts with film like.
According to the 3rd sample attitude of the present invention, a kind of exposure device is provided, rayed goes up and with the exposure device (EX) of described base plate exposure, wherein, possesses: projection optical system (PL) at substrate (W, P) by exposing via liquid (LQ); And measuring device (50), it has one side had disposed and formed light transmissive portion (56) on the part of another side in the mode relative with aforementioned projection optical system plate-shaped member (51), and reception is from the optical receiver (53) of the light of described light transmissive portion, the optical receiver of described measuring device receives exposure light via the liquid that is filled between described projection optical system and the described plate-shaped member.
According to this invention, incide on the plate-shaped member via liquid from the exposure light of projection optical system, the light that incide among the light on the plate-shaped member, has passed through light transmissive portion is received by the optical receiver that measuring device possessed.So, can be under the state of immersion exposure instrumentation exposure light.
According to the 4th sample attitude of the present invention, a kind of exposure device is provided, be radiated at via liquid (LQ) that substrate (W, P) is gone up and, wherein, possess: projection optical system (PL) by the light that will expose the exposure device (EX) of described base plate exposure; And measuring device (40,50,60,70,80,85,90,100,110,270), it has the light transmissive portion (31 of the image planes side that is located at described projection optical system, 32,44,56,271), optical receiver (36,37,42,53,290) and optical system (41,45,52,57,62,71,81,86,101,111,276), wherein, exposure light from described projection optical system incides light transmissive portion (31 via liquid, 32,44,56,271), optical system (41,45,52,57,62,71,81,86,101,111,276) be used to make light to incide this optical receiver from this light transmissive portion, described optical system, so that from the light of described light transmissive portion not by inciding the mode on the described optical system in the gas, be configured between described light transmissive portion and the described optical receiver.
According to this invention, among the exposure light from projection optical system, the light that has seen through light transmissive portion incides on the optical receiver then not to be directed to the optical system that is located on the measuring device by the mode in the gas.Therefore, optical receiver can receive the light that has seen through light transmissive portion effectively.For in the mode by gas not with light from the light transmissive portion optical system that leads, as previously mentioned, the medium beyond also can blanketing gas.Moreover optical system can be an optics, also can be made of a plurality of opticses.
According to the 5th sample attitude of the present invention, a kind of exposure device (EX) is provided, be radiated at that substrate (W, P) is gone up and, wherein, possess: projection optical system (PL) by the light (EL) that will expose via liquid (LQ) the exposure device of described base plate exposure; Optics (275) with light transmissive portion (271) of the image planes side that is configured in described projection optical system; Optical receiver (276,290) with receive the light that has passed through described projection optical system via this optics fills up liquid between described optical receiver and described optics.
In immersion exposure, receiving the light time of having passed through projection optical system via the used for optical part optical receiver of the image planes side that is configured in projection optical system, under the state that fills up with liquid between projection optical system and the optics, light shining sometimes on the optical receiver and carry out the light-receiving action.According to the present invention,, can receive the light that has passed through projection optical system well with optical receiver by between this optics and optical receiver, also filling up liquid.Promptly, by fill up the space between projection optical system and the optics with liquid, though can increase the numerical aperture NA of projection optical system, must the numerical aperture NA of the optical system of optical receiver be changed according to the numerical aperture NA of this projection optical system.That is, if also improve the numerical aperture NA of optical receiver not according to the numerical aperture NA of projection optical system, the situation of the light that has passed through projection optical system can take place to take in well, and can not receive light well in optical receiver.Thereby, under the situation of the numerical aperture NA by improving projection optical system in the mode of filling up liquid between projection optical system and the optics, thereby improve the mode of numerical aperture NA of the optical system of optical receiver by also fill up liquid between optics and optical receiver, optical receiver can receive the light that has passed through projection optical system well.At this,, have all comprising of light transmissive portion as optics.
According to the 6th sample attitude of the present invention, a kind of exposure device (EX) is provided, be radiated at that substrate (W, P) is gone up and, wherein, possess: projection optical system (PL) by the light (EL) that will expose the exposure device of described base plate exposure; Optics (275) with light transmissive portion (271) of the image planes side that is configured in described projection optical system; Optical receiver (276,290) with receive the light that has passed through described projection optical system via this optics fills up liquid (LQ) between described optical receiver and described optics.
According to the present invention, by between optics and optical receiver, filling up liquid, can improve the numerical aperture NA of the optical system of optical receiver, can carry out the light-receiving action well.Formation of filling up liquid between optics and optical receiver of the present invention except being applicable to liquid immersion exposure apparatus, can also be applicable to the dried exposure device that filling liquid not exposes.
According to the 7th sample attitude of the present invention, a kind of exposure device (EX) is provided, shine that substrate (W, P) is gone up and, wherein, possess: projection optical system (PL) by the light (EL) that will expose via liquid the exposure device of described base plate exposure; The optics (101,275) that possesses light transmissive portion (31,271) with the image planes side that is configured in described projection optical system (PL); Receive the light that passed through described projection optical system and the optical receiver of the light receiving element (102,282) that is provided with in contact with optics (101,275) with having via described optics.
According to the present invention, by with the light receiving element of optical receiver to dispose with the contacted mode of optics, thereby even if improving in fact under the situation of numerical aperture NA of projection optical system to filling up liquid between projection optical system and the optics, optical receiver also can receive the light that has passed through projection optical system well.
According to the 8th sample attitude of the present invention, a kind of exposure device (EX) is provided, rayed goes up and with the exposure device of described base plate exposure, wherein, possesses: projection optical system (PL) at substrate (W, P) by exposing via liquid; Have the light transmissive portion (271) of the image planes side that is configured in described projection optical system and on assigned position, be formed with the optics (275) of through hole (320,330); With the optical receiver that receives the light that has passed through described projection optical system via described optics.
According to the present invention, by through hole is set on optics, liquid between projection optical system and the optics can move (flowing) via through hole, therefore can not produce the pressure of the liquid between projection optical system and the optics, and the pressure of the liquid between optics and the optical receiver is poor, and the undesirable condition of optics deflection can not take place.In addition, because liquid can move via through hole, therefore can not produce the bigger pressure variation of the liquid between projection optical system and the optics, so can prevent to make the generation of the undesirable condition of projection optical system change (vibration) because of the pressure variation of liquid.
In the present invention, provide with the exposure device (EX) that uses the 1st～8th sample attitude device making method as feature.According to the present invention, because optical receiver can receive the light that has passed through projection optical system well, therefore can under the state of having set only conditions of exposure according to this light-receiving result, carry out high-precision exposure-processed, and can make device with required performance.
According to the 9th sample attitude of the present invention, a kind of exposure method is provided, shine via projection optical system (PL) and liquid that substrate (W, P) is gone up and with the exposure method of described base plate exposure by the light that will expose, wherein, comprise:, the step of the measuring device (27,270) of instrumentation exposure light is set in a side of the light exit side (PLE) of described projection optical system; Filling liquid and with the step (S14, S15) of measuring device instrumentation exposure light in the optical path space of the light exit side side of described projection optical system not; With according to described instrumentation result, in described optical path space behind the filling liquid with the step (S19) of base plate exposure, in described instrumentation step and described step of exposure, the incident angle that incides the exposure light on the interface of the light exit side of described projection optical system and described optical path space in the projection optical system is different.According to this method, by incident angle with the exposure light on the interface of the light exit side instrumentation step, that incide described projection optical system and described optical path space, be adjusted into incident angle less than described step of exposure, even if do not have liquid in the optical path space between projection optical system and measuring device, measuring device also can receive exposure light well, and can carry out the adjustment of image formation state and exposure light with the light that receives.
According to the 10th sample attitude of the present invention, a kind of exposure method is provided, be radiated at via projection optical system (PL) that substrate (W, P) is gone up and with the exposure method of described base plate exposure by the light that will expose, wherein, comprising: receive from the step of the exposure light of described projection optical system ejaculation with optical receiver; Be radiated on the substrate via projection optical system and liquid by the light that will expose and with the step of described base plate exposure.According to this method, owing to can even if therefore the numerical aperture of projection optical system becomes greatly, also can receive the exposure light that has passed through projection optical system well not to be sent to light receiving element by the light that will expose of the mode in the gas.
According to the 11st sample attitude of the present invention, a kind of exposure method is provided, shine via projection optical system (PL) that substrate (W, P) is gone up and with the exposure method of described base plate exposure by the light that will expose, wherein, comprise:, receive the step of the light that has passed through described projection optical system with optical receiver (276,290) via the optics of light transmissive portion with the image planes side that is configured in described projection optical system; With shine on the substrate via projection optical system by the light that will expose and, between described optical receiver and described optics, fill up liquid (LQ) the step of described base plate exposure.In the method, owing to filled up liquid between optical receiver and the optics,, also can receive exposure light well from light transmissive portion even if therefore the numerical aperture of projection optical system becomes big.
Description of drawings
Fig. 1 is the figure that the summary of the exposure device of displaying the 1st example of the present invention constitutes.
Fig. 2 is the front elevation of an example of display aperture aperture plate 8.
Fig. 3 (a) and (b) be the figure of an example that shows the formation of exposure optical sensor 27.
Fig. 4 is the process flow diagram of the exposure-processed of showing the exposure device of the 1st example of the present invention action example when beginning.
Fig. 5 (a) and (b) be the figure that shows that the summary of the illumination unevenness sensor on the exposure device be located at the 2nd example of the present invention constitutes.
Fig. 6 (a) and (b) be the figure that shows the variation of the illumination unevenness sensor on the exposure device be located at the 2nd example of the present invention.
Fig. 7 (a) and (b) be the figure that shows that the summary of the illumination unevenness sensor on the exposure device be located at the 3rd example of the present invention constitutes.
Fig. 8 is other the stereographic map of example of showing plano-convex lens that the illumination unevenness sensor on the exposure device be located at the 3rd example of the present invention is possessed.
Fig. 9 is a sectional view of showing the summary formation of the illumination unevenness sensor on the exposure device that is located at the 4th example of the present invention.
Figure 10 is a sectional view of showing the summary formation of the illumination unevenness sensor on the exposure device that is located at the 5th example of the present invention.
Figure 11 (a) and (b) be the figure that shows that the summary of the exposure sensor on the exposure device be located at the 6th example of the present invention constitutes.
Figure 12 shows the stereographic map formed with respect to the configuration example of the solar panel in the aperture of micro-lens array.
Figure 13 is the figure that shows the summary formation of the exposure sensor on the exposure device that is located at the 7th example of the present invention.
Figure 14 is the figure that shows the summary formation of the exposure sensor on the exposure device that is located at the 8th example of the present invention.
Figure 15 (a) and (b) be the figure that shows that the summary of the illumination unevenness sensor on the exposure device be located at the 9th example of the present invention constitutes.
Figure 16 is the figure that shows the summary formation of the illumination unevenness sensor on the exposure device that is located at the 10th example of the present invention.
Figure 17 is the figure of variation that shows the illumination unevenness sensor 40 that exposure device possessed of the 2nd example.
Figure 18 is the process flow diagram of an example of showing the manufacturing process of microdevice.
Figure 19 is the figure of an example that shows the detailed flow process of step S23 under the situation of semiconductor devices, Figure 11.
Figure 20 is a summary pie graph of showing an example of exposure device of the present invention.
Figure 21 be show near the leading section of projection optical system, the summary pie graph of liquid feed mechanism and liquids recovery mechanism.
Figure 22 is a planimetric map of showing the position relation of the view field of projection optical system and liquid feed mechanism and liquids recovery mechanism.
Figure 23 is a summary pie graph of showing an example of optical receiver of the present invention.
Figure 24 shows that optical receiver carries out the synoptic diagram of the state of instrumentation action.
Figure 25 is a major part enlarged drawing of showing an example of optics of the present invention and optical receiver.
Figure 26 is the planimetric map of the optics of Figure 25.
Figure 27 (a) and (b) be the figure of an example of the light transmissive portion of display optics parts.
Figure 28 is the figure that shows an example of the light receiving signal that receives with optical receiver.
Figure 29 is the figure of an example of the mask that uses when being illustrated in the imaging characteristic of instrumentation projection optical system.
Figure 30 is the figure of an example of the mask that uses when being illustrated in the imaging characteristic of instrumentation projection optical system.
Figure 31 is the figure of an example of the mask that uses when being illustrated in the imaging characteristic of instrumentation projection optical system.
Figure 32 is a major part enlarged drawing of showing other example of optics of the present invention and optical receiver.
Figure 33 is a major part enlarged drawing of showing other example of optics of the present invention and optical receiver.
Figure 34 is a major part enlarged drawing of showing other example of optics of the present invention and optical receiver.
Figure 35 is the planimetric map of the optics of Figure 34.
Figure 36 (a)～(c) shows to form the figure that liquid soaks an example of regional step.
Figure 37 is a major part enlarged drawing of showing other example of optics of the present invention and optical receiver.
Figure 38 is the planimetric map of the optics of Figure 37.
Figure 39 is a major part enlarged drawing of showing other example of optics of the present invention and optical receiver.
Figure 40 is the planimetric map of the optics of Figure 39.
Figure 41 is a major part enlarged drawing of showing other example of optics of the present invention and optical receiver.
Figure 42 is a planimetric map of showing the state on the substrate objective table that a plurality of optical receivers are configured in.
Figure 43 is a major part enlarged drawing of showing other example of optics of the present invention and optical receiver.
Figure 44 is a major part enlarged drawing of showing other example of optics of the present invention and optical receiver.
Figure 45 is the relation with the refractive index of the front end of projection optical system and the medium that joins with it, and the figure that produces the condition of total reflection on the front end of projection optical system can not the light in the part of exposure light is described.
Embodiment
Below, explain the exposure device and the device making method of example of the present invention with reference to accompanying drawing, but the invention is not restricted to this.
(the 1st example)
Fig. 1 is the figure that shows that the summary of the exposure device of the 1st example of the present invention constitutes.Moreover, exposure device EX shown in Figure 1, it is the exposure device of the liquid immersion type that exposes via the liquid between projection optical system PL and the wafer W (pure water) LQ, be reticle mask R with the circuitous pattern DP that has formed semiconductor element, by the substep repetitive mode, the picture of described circuitous pattern DP is transferred to exposure device on the wafer W.
Moreover, in the following description, set the XYZ orthogonal coordinate system shown in the figure, and each position component relation has been described with reference to this XYZ orthogonal coordinate system.The XYZ orthogonal coordinate system is set X-axis and Y-axis in the mode parallel with respect to wafer W, and the Z axle is set at direction with respect to the wafer W quadrature.XYZ coordinate among figure system is set at the face that is parallel to surface level with the XY plane in fact, and the Z axle is set at direction on vertical.
Exposure device EX shown in Figure 1 as the light source 1 that is used to provide exposure light, possesses the ArF quasi-molecule laser source of the light of the wavelength that 193nm (ArF) is provided.The light beam of the almost parallel that penetrates from light source 1 after being shaped as the light beam of regulation section by beam shaping optical system 2, incides coherence's reduction portion 3.Coherence's reduction portion 3 has the function of reduction as the generation of the interferogram on the reticle mask R (and wafer W) of plane of illumination.
About the detailed content of coherence's reduction portion 3, for example the spy open have in the clear 59-226317 communique disclosed.From the light beam of coherence's reduction portion 3,, on its rear side focus face, form a plurality of light sources via the 1st fly lens (the 1st optical integrator) 4.After by vibrating mirror 5 deflections, shine the 2nd fly lens (the 2nd optical integrator) 7 overlappingly from the light of these a plurality of light sources, thus, on the rear side focus face of the 2nd fly lens 7, form the secondary souce that constitutes by a plurality of light sources via relay optical system 6.
At the exit facet CJ of the 2nd fly lens 7, promptly dispose aperture stop plate 8 on the pupil face of illuminating optical system (irradiation system) IS (with the pupil face of the projection optical system PL face of conjugation optically), can rotate freely by CD-ROM drive motor 8f.Fig. 2 is the front elevation of an example of display aperture aperture plate 8.As shown in Figure 2, aperture stop plate 8 is made of the plectane that rotation around turning axle O constitutes freely, be formed with the aperture diaphragm 8a of the circle of common irradiation usefulness along circumferencial direction, the aperture diaphragm 8b of annular irradiation usefulness, the aperture diaphragm 8c of 4 utmost points distortion irradiation (irradiation of 4 utmost points) usefulness, the aperture diaphragm 8d of the small circular of less coefficient of coherence (little σ) usefulness, and the illumination of instrumentation exposure light is irregular or the variable aperture diaphragm 8e that uses during light quantity etc.Moreover, the bigger circle of the dotted line shown in Fig. 2, expression is the size of the aperture diaphragm 8a of the circle of irradiation usefulness usually, is illustrated in order to carry out with the comparison of the size of aperture diaphragm 8b～8e.
In addition, coefficient of coherence (σ of irradiation system), the ratio of the numerical aperture NAr of the reticle mask R side of usefulness projection optical system PL and the numerical aperture NAi of illuminating optical system IS, definition in such a way.
σ＝NAi/NAr
In addition, the numerical aperture NA of projection optical system PL, the numerical aperture NAw of ordinary representation wafer W side, the numerical aperture NAr of reticle mask side utilizes the multiplying power M of projection optical system PL, tries to achieve as NAr=NAw/M.
Described aperture diaphragm 8e, the size in aperture is formed variable, for example, can change the σ value in 0.05～0.50 scope.This aperture diaphragm 8e, be the liquid LQ that does not have the image planes side of projection optical system PL, and carry out illumination not during the instrumentation of even light quantity, be used for adjusting (dwindling) parts towards the aperture angle (outermost light and optical axis angulation) of the exposure light of the image planes side of projection optical system PL.Promptly, because the exposure device of this example, it is the exposure device that carries out the liquid immersion type of exposure-processed via the liquid LQ between projection optical system PL and the wafer W, if therefore the image planes side at projection optical system PL does not have liquid LQ, for example shine the bigger exposure light of employed aperture angle usually, at the fore-end of the image planes side of projection optical system PL, the light total reflection of a part and can not pass through projection optical system PL.Described aperture diaphragm 8e is in order to adjust the aperture angle towards the exposure light of the image planes side of projection optical system PL, thereby prevents that the total reflection on projection optical system PL is provided with.Moreover, in Fig. 2, for feature of the present invention is made clear, illustrate with aperture diaphragm 8d and dividually aperture diaphragm 8e is located at formation on the aperture stop plate 8, but because the coefficient of coherence of aperture diaphragm 8d also is set at about 0.25～0.35, therefore also can be when instrumentation, to use aperture diaphragm 8d and the formation of having omitted aperture diaphragm 8e.At this moment, also can make the aperture of aperture diaphragm 8d variable.
Get back to Fig. 1, the turning axle O of aperture stop plate 8 is connected on the turning axle of CD-ROM drive motor 8f, make aperture stop plate 8 rotation around turning axle O by driving CD-ROM drive motor 8f, can the aperture diaphragm of handover configurations on the exit facet CJ of the 2nd fly lens 7.Can change the exposure light intensity distribution (beam distribution) of the exit facet CJ of the 2nd fly lens 7 according to the aperture diaphragm on the exit facet CJ that is configured in the 2nd fly lens 7.The driving of CD-ROM drive motor 8f is by master control system 20 controls of the action of the integral body of unified control exposure device EX.
Any 1 exposure light in the light beam of the secondary souce that next free the 2nd fly lens 7 forms, that passed through to be formed on the aperture diaphragm 8a～8d on the aperture stop plate 8, via light-gathering optics 10 and refracting telescope 11, uniform irradiation has formed the reticle mask R of the circuitous pattern DP of regulation on downside overlappingly.Thus, the picture of the figure in the irradiation area of reticle mask R, projection optical system PL via the both sides heart far away, with the projection multiplying power β (β for example be 1/4 or 1/5 etc.) of regulation, be projected on the image planes that are configured in projection optical system PL, on the exposure area (view field) as the wafer W of substrate.Wafer W for example is semiconductor (silicon etc.) or SOI discoideus substrates such as (insulator-base epitaxial silicons).Moreover more than Shuo Ming beam shaping optical system 2～refracting telescope 11 constitutes illuminating optical system (irradiation system) IS.
Projection optical system PL is made of a plurality of optical elements such as lens.In this example, therefore the light owing to used the ArF quasi-molecule laser source in vacuum ultraviolet territory as exposure light as the glass material of the optical element that constitutes projection optical system PL, for example use synthetic quartz or fluorite (calcium fluoride: CaF 2).The part of the optical element that projection optical system PL possessed, moving along the optical axis AX direction (Z direction) of projection optical system PL, and tilt around can or being parallel to the axle of Y-axis at the axle that is parallel to X-axis, these optical elements are by lens control part 14 controls described later.This projection optical system PL is to provide to the image planes side under the state of liquid LQ, and incident beam is in the projection optical system of the liquid immersion type of image planes side imaging, and numerical aperture (N.A.) is set to more than or equal to 1 (for example, 1.00～1.40).Moreover the projection optical system PL of this example though be dioptric type (refractive), can certainly use reflection-refraction type (reflection-refraction type) or reflection-type.
Reticle mask R via reticle mask support (figure does not show), is positioned on the reticle mask objective table 13.Moreover reticle mask objective table 13 according to the instruction that comes self-control system 20, is driven by reticle mask objective table control part (figure does not show).At this moment, the moving of reticle mask objective table 13 by reticle mask interferometer (figure does not show) be located at moving lens (scheming not show) instrumentation on the reticle mask objective table 13, and exported to master control system 20 with its instrumentation result.
On projection optical system PL, be provided with instrumentation temperature and air pressure, simultaneously according to environmental changes such as temperature, air pressure, the optical characteristics such as imaging characteristic of projection optical system PL are carried out the lens control part 14 of certain control.This lens control part 14 is exported to master control system 20 with the temperature and the air pressure of instrumentation, master control system 20 is according to from the temperature of lens control part 14 outputs and the instrumentation result of air pressure and exposure optical sensor 27 described later, via the optical characteristics of the imaging optical system of lens control part 14 control projection optical system PL etc.
Wafer W is contained on the chip support 16 that is built in the wafer stage 15 by vacuum clip.Moreover, when wafer W being remained on the chip support 16, with above it with the top corresponding to mode of wafer stage 15, set the height and position of chip support 16.Wafer stage 15, be make can be respectively the parts that overlap of X-direction and Y direction move in the figure a pair of X objective table and Y objective table, and adjust position in the XY plane freely.
In addition, though omitted diagram, wafer stage 15 is by the objective table that wafer W is moved along Z-direction, make the objective table of wafer W small rotation in the XY plane, thereby and make angle change the formations such as objective table of adjustment with respect to the inclination of the wafer W on XY plane with respect to the Z axle.Like this, wafer stage 15, locomotive function, the locomotive function of Y direction, the locomotive function of Z-direction, the axial spinfunction of Z, X-axis tilt function and Y-axis tilt function on every side on every side with X-direction.
End on wafer stage 15 is equipped with moving lens 17, disposes laser interferometer 18 on the position relative with the minute surface of moving lens 17.Moreover though will illustrate simplification in Fig. 1, moving lens 17 is by the moving lens that has perpendicular to the reflecting surface of X-axis, and the moving lens that has perpendicular to the reflecting surface of Y-axis constitutes.In addition, laser interferometer 18, by 2 laser interferometer that X-axis is used along X axis moving lens 17 illuminating laser beams, and the laser interferometer of using to the Y-axis of moving lens 17 illuminating laser beams along Y-axis constitutes, 1 laser interferometer that 1 laser interferometer being used by X-axis and Y-axis are used, the X coordinate of instrumentation wafer stage 15 and Y coordinate.
In addition, the instrumentation value of 2 laser interferometer using by X-axis poor, the rotation angle in the XY plane of instrumentation wafer stage 15.Information by X coordinate, Y coordinate and the rotation angle of laser interferometer 18 instrumentations is provided for master control system 20 as stage position information.The stage position information that master control system 20 one side monitoring provide, one side is exported to objective table drive system 19 with control signal, comes the location of control wafer objective table 15 with nanoscale.Moreover, replace moving lens 17, also can reflecting surface be set in the side of wafer stage 15.What like this, can make wafer stage 15 toply roughly all becomes same plane on whole.
In addition, exposure device EX shown in Figure 1 for the image planes side to projection optical system PL provides liquid LQ, reclaims the liquid LQ that provides simultaneously, possesses fluid Supplying apparatus 21 and liquid withdrawal system 22.Fluid Supplying apparatus 21 possesses the container of accommodating liquid LQ, force (forcing) pump etc. and constitutes.On this fluid Supplying apparatus 21, connecting an end of supply pipe 23, on the other end of supply pipe 23, connecting supply nozzle 24.Via these supply pipes 23 and supply nozzle 24 feed fluid LQ.Moreover, in this example,, therefore use pure water as liquid LQ owing to use ArF laser as exposure light.Moreover, the container of fluid Supplying apparatus 21, force (forcing) pump etc., exposure device EX not necessarily must possess, and can replace their at least a portion with the equipment of the factory that exposure device EX is set etc.
Liquid withdrawal system 22, the container etc. that possesses suction pump, accommodates the liquid LQ of recovery.On liquid withdrawal system 22, connect an end of recovery tube 25, on the other end of recovery tube 25, connecting recovery nozzle 26.Offer the liquid LQ of the image planes side of projection optical system PL, be recycled in the liquid withdrawal system 22 via reclaiming nozzle 26 and recovery tube 25.These fluid Supplying apparatus 21 and liquid withdrawal system 22 are by master control system 20 controls.Moreover, the suction pump of liquid withdrawal system 22 and container etc., exposure device EX not necessarily must possess, and also can replace their at least a portion with the equipment of the factory that exposure device EX is set etc.
Promptly, when in the space of the image planes side of projection optical system PL, providing liquid LQ, master control system 20 is exported control signals with respect to fluid Supplying apparatus 21 and liquid withdrawal system 22 respectively, thereby controls quantity delivered and the yield of the liquid LQ of each unit interval.By this control, only provide the liquid LQ of required q.s to the image planes side of projection optical system PL.Moreover, in example shown in Figure 1, though, be not limited thereto with withdrawal liquid LQ such as the recovery nozzle 26 of the top that is located at wafer stage 15, recovery tube 25, suction pumps.For example, the recoverer (escape hole) of liquid LQ is set around also can be on wafer stage 15, can also and uses it and described liquid withdrawal system 22.
In addition, on described wafer stage 15, be provided with that instrumentation shines the illumination irregular (light quantity is irregular) of the exposure light on the wafer stage 15 via projection optical system PL or the integration light quantity is irregular and the exposure optical sensor 27 of light quantity (exposure).Fig. 3 is the figure of an example that shows the formation of exposure optical sensor 27, (a) is stereographic map, (b) is the A-A line sectional view in (a).Shown in Fig. 3 (a), exposure optical sensor 27 possesses the roughly casing 30 of rectangular shape.Casing 30 is with pyroconductivity higher metal, and the basket that forms of aluminium for example on 33, is formed with pin hole 31 and opening 32 as light transmissive portion in the above.
Be formed on casing 30 top 33 on pin hole 31, be irregular or the integration light quantity is irregular and be provided with via the illumination of the exposure light IL of projection optical system PL irradiation for instrumentation, it directly is about tens～tens μ m.In addition, be formed on casing 30 top 33 on opening 32, be set to and the identical size in exposure area (view field of projection optical system PL).On this opening 32, be provided with for example evaporation Cr (chromium) on one side, and with the ND light filter 34 of incident light dim light.In addition, shown in Fig. 3 (b), be provided with illumination unevenness sensor 36 and exposure sensor 37 in casing 30 inside.Illumination unevenness sensor 36 and exposure sensor 37 all possess light receiving elements such as PIN photodiode, detect the light quantity of the exposure light on the light receiving surface that incides them.In addition, in Fig. 3 (a), the 35th, the detection signal that is located at the light receiving element on illumination unevenness sensor 36 and the exposure sensor 37 (with reference to Fig. 3 (b)) is fetched into the wiring of the outside of exposure optical sensor 27.
Illumination unevenness sensor 36, the area of light receiving surface is set at the degree that can receive exposure light via pin hole 31, exposure sensor 37 is set at the degree that can receive the exposure light that has seen through the ND light filter 34 that is located on the opening 32 with the area of light receiving surface.Be located at the light receiving element on illumination unevenness sensor 36 and the exposure sensor 37 respectively, on its light receiving surface, implemented AR coating, and be installed on the electric substrate 38 via support component respectively for ArF laser.
Be connected with wiring 35 on electric substrate 38, and with via this wiring 35, the detection signal of the light receiving element that illumination unevenness sensor 36 and exposure sensor 37 are possessed is fetched into outside mode and constitutes.Moreover, as the light receiving element that is located at respectively on illumination unevenness sensor 36 and the exposure sensor 37, for example, can be any one of light inverting element that utilizes photoelectric effect, Schottky effect, photomagnetoelectric effect, photoconductive effect, photoelectron emissions effect, thermoelectric effect etc.Moreover, exposure optical sensor 27, can not that portion is provided with the formation of light receiving element within it, but only be provided with the optical receiver system that receives exposure light in inside, with optical fiber or mirror (catoptron) etc., to at photoconduction that optical receiver system receives outside casing 30, carry out the formation of light-to-current inversion then with photoelectric detection systems such as photomultipliers.
If the pin hole 31 that will be located on the exposure optical sensor 27 is configured in the exposure area, and will expose rayed on the exposure area, the light receiving element that then has only exposure light among the exposure light of irradiation, that passed through pin hole 31 to be arranged on the illumination unevenness sensor 36 detects.To expose rayed under the state on the exposure area, if the mobile pin hole 31 of one side, one side detects exposure light, just the not even integral light amount of illumination of the exposure light in can the instrumentation exposure area is irregular.In addition, if be configured under the state on the exposure area to exposure area irradiation exposure light will being located at the opening 32 of exposure on the optical sensor 27, by the exposure light of ND light filter 34 dim lights, the light receiving element that illuminated quantity sensor 37 is possessed detects.Because the light extinction rate of ND light filter 34 is known, the therefore testing result of the light receiving element that is possessed according to this light extinction rate and exposure sensor 37 can instrumentation shines the light quantity of the exposure light on the exposure area.
More than the detection signal of Shuo Ming exposure optical sensor 27 is provided for master control system 20.Moreover, the mensuration of the irregular and light quantity of illumination, (when handling the wafer W of batch unit, when changing reticle mask R) carries out at every turn at every turn for example termly.Master control system 20, the not even integral light amount of illumination according to illumination unevenness sensor 36 instrumentations that use exposure optical sensor 27 is irregular, change the exposure light intensity that penetrates from light source 1 in this irregular mode that diminishes, perhaps control the Illumination Distribution of the exposure light of the image planes side that shines projection optical system PL.In addition, master control system 20, light quantity according to the exposure light of optical sensors 37 instrumentations that use exposure optical sensor 27, obtain the controlled variable of the change of the optical characteristics that is used to compensate the projection optical system PL that the incident by exposure light causes, and when the exposure of wafer W, use this controlled variable, via the optical characteristics of lens control part 14 control projection optical system PL.Moreover, shine the adjustment of Illumination Distribution of exposure light of the image planes side of projection optical system PL, for example can be suitable for that the spy opens flat 10-189427 communique (corresponding United States Patent (USP) 5,867,319), the spy opens 2002-100561 communique (corresponding United States Patent (USP) 6,771,350), the spy opens 2000-315648 communique (corresponding United States Patent (USP) 6,013,401 and corresponding United States Patent (USP) 6,292,255) disclosed method.Moreover, as long as specified by this world application or being allowed by the law of the country of selection, just quote the part of the disclosure of these patent gazettes as the record of this paper.
More than, the formation of the exposure device EX of the 1st example of the present invention is illustrated, secondly the action to the exposure device EX of described formation describes.Fig. 4 is the process flow diagram of the exposure-processed of showing the exposure device of the 1st example of the present invention action example when beginning.Process flow diagram shown in Figure 4 for example carries out when the wafer W of 1 batch of exposure-processed.In the zero hour, reticle mask R is not remained on the reticle mask objective table 13, wafer W is not remained on the wafer stage 16 in addition yet, and then do not have to provide liquid LQ yet to the image planes side of projection optical system PL.
Under this state, at first master control system 20, drive CD-ROM drive motor 8f, thereby will be formed among aperture diaphragm 8a～8e on the aperture stop plate 8, the aperture diaphragm 8e with minimum circle of minimum σ value is configured on the exit facet CJ of the 2nd fly lens 7 (step S11).When the configuration of aperture diaphragm 8e is finished, master control system 20, the instrumentation result of a monitoring laser interferometer 18, one side is with respect to objective table drive system 19 output control signals, and mobile wafer stage 15, the opening 32 (ND light filter 34) on the casing 30 that is formed on exposure optical sensor 27 is configured on the exposure area.
When finishing the configuration of exposure optical sensor 27 by moving of wafer stage 15, master control system 20 is exported control signal with respect to light source 1, thereby makes light source 1 luminous.The light beam of the almost parallel that penetrates from light source 1 by the luminous of light source 1, be shaped as the light beam of regulation section via beam shaping optical system 2, and incide on the 2nd fly lens 7 via coherence's reduction portion the 3, the 1st fly lens 4, vibrating mirror 5 and relay optical system 6 in turn, thus, on the exit facet CJ of the 2nd fly lens 7, form a plurality of secondary souces.
Among light beam from these secondary souces, passed through to be configured in the exposure light of the aperture diaphragm 8e on the exit facet CJ of the 2nd fly lens 7, by light-gathering optics 10, and be refracted mirror 11 deflections.At this, owing to reticle mask R is not remained on the reticle mask objective table 13, therefore be refracted the exposure light of mirror 11 deflections, be not directly incident on the projection optical system PL via reticle mask R.
At this, projection optical system PL is in order to realize high-resolution, design numerical aperture NA bigger, provide in image planes side under the state of liquid LQ to projection optical system PL, even if the aperture angle towards the exposure light of the image planes side of projection optical system PL is bigger, the figure picture also can be in the imaging of image planes side.But, at this, because the image planes side to projection optical system PL does not provide liquid LQ, if therefore the hypothesis aperture diaphragm 8a that the σ value is bigger is configured on the exit facet CJ of the 2nd fly lens 7, a part that comprises the exposure light of outermost light, in the fore-end total reflection of projection optical system PL, and can not pass through projection optical system PL.
With reference to Figure 45 this situation is described.In Figure 45, between the optical element LS and stage surface 15a of the front end that is located at projection optical system PL, provide liquid LQ.As making light pass through behind the projection optical system PL condition that penetrates to the hydraulic fluid side from the light exit side end PLE of optical element LS, be that exposure light (outermost light) EL can be at the medium in the space that is present between optical element LS and the stage surface 15a, interface with optical element LS, that is, the light exit side end PLE of optical element LS goes up total reflection.Total reflection condition is if the incident angle to light exit side end PLE of the light EL that will expose is made as θ i, and the refractive index of the light exit side end PLE of optical element LS is made as n P, the refractive index of liquid LQ (medium) is made as n L, then satisfy n between them PSin θ i=n LThereby, if satisfy n PSin θ i＜n LIncident angle θ i, exposure light EL penetrates with emergence angle θ o to refraction back, hydraulic fluid side from light exit side end PLE., when not having liquid LQ in the space between projection optical system PL and stage surface 15a, having refractive index in this space is n GGas.Thereby, be n though do not produce the condition of total reflection PSin θ i＜n G, but because the refractive index n of gas GUsually less than liquid refractive index n L, the θ i that therefore satisfies this condition compares with the situation that has liquid, diminishes.Its result is even if when not having liquid LQ, like that, there is the situation (situation of having showed the cirtical angle of total reflection) that produces total reflection in identical incident angle θ i shown in dashed lines among Figure 45.Therefore, for not with liquid filling in described space and instrumentation exposure light, must adjust to also littler sometimes than the incident angle of the situation of immersion exposure.
In this example, in step S11, by (for example having minimum σ value, 0.25) aperture diaphragm 8e be configured on the exit facet CJ of the 2nd fly lens 7, adjustment is towards the aperture angle (angle, reduced bore) of the exposure light of the image planes side of projection optical system PL, and therefore the exposure light that incides on the projection optical system PL can pass through projection optical system P.Passed through the exposure light of projection optical system PL, incided on the ND light filter 34 (Fig. 3) that is configured in the exposure area, the light receiving element that is arranged on after only by the dim light ormal weight on the exposure sensor 37 detects.This detection signal is exported to master control system 20, and calculates the light quantity of the exposure light that shines on the exposure area with the light extinction rate of ND light filter 34.Thus, under the state that reticle mask R is not remained on the reticle mask objective table 13, instrumentation shines the light quantity (step S12) of the exposure light on the exposure area.
Secondly, master control system 20 is after having stopped light source 1 luminous, to the reticle mask Load System output control signal that figure does not show, take out of the reticle mask R of regulation then from the reticle mask storehouse that figure does not show, and this reticle mask R is remained on (step S13) on the reticle mask objective table 13.When remaining on reticle mask R on the reticle mask objective table 13, master control system 20 makes light source 1 luminous once more, has passed through the light quantity (step S14) of the exposure light of reticle mask R then with exposure sensor 37 instrumentations.Thus, can be radiated at the light quantity of the exposure light on the exposure area when remaining on reticle mask R on the reticle mask objective table 13, be radiated at light quantity poor of the exposure light on the exposure area when not keeping, poor according to this, can be in the hope of the transmissivity (to the incident light quantity of projection optical system PL) of reticle mask R.
Secondly, master control system 20, export control signal to the reticle mask Load System that figure does not show, make its standby to take out of from middle mask objective table 13, the instrumentation result of a while monitoring laser interferometer 18, one side is with respect to objective table drive system 19 output control signals, and mobile wafer stage 15, and pin hole 31 on the casing 30 that is formed on exposure optical sensor 27 is configured on the assigned position in the exposure area.When having finished the configuration of exposure optical sensor 27 by moving of wafer stage 15, master control system 20 is with respect to light source 1 output control signal, thereby make light source 1 luminous, and the mobile wafer stage 15 of one side, one side shines the illumination irregular (step S15) of the exposure light on the exposure area with illumination unevenness sensor 36 instrumentations.
When above processing finishes, master control system 20, instrumentation result according to step S14, S15, to light source 1 output control signal, change exposure light intensity and intensity distributions then, or change is used for adjusting via lens control part 14 parameter (step S16) of the optical property of projection optical system PL.Secondly, master control system 20, export control signal to the reticle mask shovel loader that figure does not show, thereby reticle mask R is remained on the reticle mask objective table 13, drive CD-ROM drive motor 8f simultaneously, with the aperture diaphragm 8e that is configured on the exit facet CJ of the 2nd fly lens 7, change to any one of aperture diaphragm 8a～8d of the wafer W that is used for exposing.For example, when carrying out the annular irradiation, the exit facet CJ that aperture diaphragm 8b is configured in the 2nd fly lens 7 goes up (step S17).
Secondly, master control system 20, the wafer Load System output control signal of not showing to figure, thus wafer W is transported to indoor that the figure of exposure device EX does not show, hold it in then on the chip support 16.After wafer W being remained on the chip support 16, master control system 20 is with respect to fluid Supplying apparatus 21 and liquid withdrawal system 22 output control signals.Thus, provide liquid LQ (step S18) in the space of the image planes side of projection optical system PL, the figure that carries out being formed on the reticle mask R is transferred to exposure-processed (step S19) on the wafer W via projection optical system PL and liquid LQ.This exposure-processed is all carried out for the wafer W of 1 batch.More than Shuo Ming processing shown in Figure 4 is carried out when the exposure-processed of carrying out for new batch.In addition, in the exposure of the wafer W of 1 batch, be used in the controlled variable of trying to achieve among the step S16, carry out the adjustment of the optical property of, projection optical system PL corresponding with exposure to the exposure light of projection optical system PL incident.
Moreover, in process flow diagram shown in Figure 4, for convenience of explanation, under the state on the exit facet CJ that is configured in the 2nd fly lens 7 at the aperture diaphragm 8e that does not have liquid LQ and will have a minimum σ value, use the instrumentation (step S14) of the light quantity of exposure sensor 37 continuously, the situation of the instrumentation irregular with the illumination of using illumination unevenness sensor 36 (step S15) is example, be illustrated, but also can carry out the instrumentation of any one party via the liquid LQ of the image planes side of projection optical system PL.Particularly, because under the condition different (condition of minimum σ value 0.25) with the conditions of exposure of reality, existence can not the correct irregular situation of illumination of instrumentation, therefore also can implement liquid and soak correspondence illumination unevenness sensor 36, for example pin hole 31 is implemented water-proofing treatment, provide under the state (that is, between step S18 and the step S19) of liquid LQ in image planes side then, carried out the instrumentation of step S15 to projection optical system PL.
In addition, in described example, after having carried out using the light quantity instrumentation of exposure sensor 37, use the irregular instrumentation of illumination of illumination unevenness sensor 36, but because the operation of taking out of, moving into of reticle mask R reduces throughput rate, therefore after being preferably in the irregular instrumentation of illumination that has carried out use illumination unevenness sensor 36, use the light quantity instrumentation of exposure sensor 37.In addition, when using the irregular instrumentation of illumination of illumination unevenness sensor 36, reticle mask R is backed out from the light path of exposure light, but also can dispose the reticle mask (glass blank that instrumentation is used) that does not form figure.
In addition, in described example, be configured in the aperture diaphragm on the exit facet CJ of the 2nd fly lens 7 by change, change coefficient of coherence (σ of irradiation system), and adjustment is towards the aperture angle of the exposure light of the image planes side of projection optical system PL, but the adjustment of the aperture angle of exposure light is not limited thereto, and can make in all sorts of ways.For example, can also be by leading portion (light source 1 side) configuration varifocal optical system at the 2nd fly lens 7, and change incides the distribution of the light beam on the 2nd fly lens 7, changes the beam distribution of exposure light of the exit facet CJ of the 2nd fly lens 7 then and adjusts.In addition, in described example, coefficient of coherence (σ of irradiation system) value is set at 0.25, but be not limited thereto, as long as consider the refractive index of liquid LQ and the numerical aperture of projection optical system PL, even if do not have under the state of liquid LQ with the image planes side at projection optical system PL then, the part of exposure light also can not produce total reflection on the front end face of projection optical system PL mode is set and is got final product.
In addition, in described example, image planes side at projection optical system PL does not have under the state of liquid LQ, use the instrumentation of illumination unevenness sensor 36 and the instrumentation of use index sensor 37, even if but adjusted the aperture angle of exposure light, there is the state of liquid LQ and do not have under the state of liquid LQ in the image planes side of projection optical system PL, the different situation of reflectivity below projection optical system PL is also arranged.In this case, for example, as long as be configured at the reflecting plate that will have predetermined reflection under the state of image planes side of projection optical system PL, irradiation exposure light, and for example use that the spy drives the disclosed volume reflection watch-dog of 2001-144004 communique (corresponding United States Patent (USP) 6,730,925), then at the state that has liquid LQ with do not have under the state of liquid LQ, the light quantity returned from projection optical system PL of instrumentation respectively.Then, its difference is preserved in advance as update information, and get final product with the instrumentation result under this update information correction illumination unevenness sensor 36 and state exposure sensor 37, that do not have liquid LQ.Moreover, as long as specified by this world application or being allowed by the law of the country of selection, just quote described spy and open the part of the disclosure of 2001-144004 communique (corresponding United States Patent (USP) 6,730,925) as the record of this paper.
In addition, in the 1st example, the situation of using illumination unevenness sensor 36 and exposure sensor 37 to carry out instrumentation under the state that does not have liquid LQ is illustrated, but also can will does not have the instrumentation under the state of liquid LQ to be applicable to various measuring devices such as aerial image measuring device described later and corrugated aberration measuring device.At this moment, also can be in the space of the image planes side of projection optical system PL configuration be equivalent to optics (glass) parts of liquid LQ.By disposing such optics,, also can under condition, carry out instrumentation near the situation in the space of the image planes side of having filled up projection optical system PL with liquid LQ even if there is not liquid LQ.Moreover, corrugated aberration measuring device, for example at United States Patent (USP) 6,650,399 and U.S. Patent Publication 2004/0090606 in be disclosed, quote the part of these disclosures as the record of this paper.
As previously discussed, in the 1st example,, also can receive the exposure light that is mapped on the projection optical system PL well via the light transmissive portion of various sensors even if increased the numerical aperture of projection optical system by the use of immersion method.In addition, owing to receiving exposure light, therefore do not carry out to the influence of the state of liquid body LQ (temperature variation, fluctuation, transmission change etc.) instrumentation of various sensors via liquid LQ.
(the 2nd example)
Secondly, the exposure device to the 2nd example of the present invention describes.The integral body of the exposure device of this example constitutes, and is the formation roughly the same with exposure device shown in Figure 1, but the formation difference of exposure optical sensor 27.Moreover, in the 1st example, exposure optical sensor 27, do not have in the image planes side of projection optical system PL to carry out instrumentation action (reception of exposure light) under the state of liquid LQ, but in the following description, exposure optical sensor 27 carries out the instrumentation action via the liquid LQ of the image planes side of projection optical system PL.In addition, as shown in Figure 3, the exposure optical sensor 27 that illustrates in the 1st example possesses illumination unevenness sensor 36 and exposure sensor 37.Below, for explanation simply,, describe mainly the present invention is applicable to that the situation on the illumination unevenness sensor that is located on the exposure optical sensor 27 is an example, certainly, also go for exposure sensor described later and aerial image measuring device.
Fig. 5 is the figure that shows the summary formation of the illumination unevenness sensor on the exposure device that is located at the 2nd example of the present invention, (a) is sectional view, (b) is provided in a side of the stereographic map of the plano-convex lens on the illumination unevenness sensor.Shown in Fig. 5 (a), be located at the illumination unevenness sensor 40 on the exposure device of this example, comprise plano-convex lens 41 and light receiving element 42 and constitute.
Shown in Fig. 5 (a) and (b), plano-convex lens 41 is to have formed the optical lens of par 41a with the curved face part 41b of the curvature with regulation.This example and since with the 1st example similarly, use the light of the ArF quasi-molecule laser source in vacuum ultraviolet territory as exposure light, therefore, for example use synthetic quartz or fluorite as the glass material of plano-convex lens 41.On the 41a of the par of plano-convex lens 41, except evaporation Cr metals such as (chromium) on whole of central portion and form light shielding part 43.Central portion at par 41a does not have evaporation Cr metals such as (chromium), and thus, formation has the light transmissive portion 44 in the footpath about tens～tens μ m.
The plano-convex lens 41 of this formation, towards projection optical system PL, and the corresponding to mode of top 15a of top (light shielding part 43 top) and wafer stage 15 is installed on the wafer stage 15 with the par 41a that will form light shielding part 43.In addition, light receiving element 42 with the curved face part 41b of light receiving surface 42a towards plano-convex lens 41, and is configured in the approximate centre of light receiving surface 42a mode on the optical axis of plano-convex lens 41, is installed on the wafer stage 15.This light receiving element 42 has been implemented the AR coating for ArF laser on light receiving surface 42a.
Moreover at this, for convenience of explanation, plano-convex lens 41 and light receiving element 42 are installed on the wafer stage 15, but also are fit to they are installed in the casing identical with casing shown in Figure 3 30, and casing is located on the wafer stage 15.Under the situation of this formation, top (light shielding part 43 top) with plano-convex lens 41 installs plano-convex lens 41 with the top corresponding to mode of casing, and in the corresponding to mode of top 15a of the top and wafer stage 15 of casing casing is installed on the wafer stage 15.
In situation about plano-convex lens 41 being installed on the wafer stage 15, and be installed under any one situation in the casing identical with casing shown in Figure 3 30, all, the liquid LQ on the wafer stage 15 can not immersed in the illumination unevenness sensor 40 with enforcement waterproof (anti-liquid) countermeasures such as encapsulants.Thereby, shown in Fig. 5 (a), illumination unevenness sensor 40 is configured in projection optical system PL below when (Z direction), even if provide liquid LQ between projection optical system PL and wafer stage 15, liquid LQ can not immerse in the illumination unevenness sensor 40 yet.
Therefore, use the instrumentation that illumination is irregular or the integration light quantity is irregular of exposure light of the illumination unevenness sensor 40 of this example, the illuminate condition that sets in the time of can being set at the exposure-processed of carrying out for wafer W at illuminate condition with illuminating optical system IS, and above projection optical system PL and wafer stage 15, provide between the 15a (plano-convex lens 41) under the state of liquid LQ and carry out.To projection optical system PL with provide between the 15a above the wafer stage 15 under the state of liquid LQ, incide the exposure light on the projection optical system PL, not in the leading section total reflection of projection optical system PL, but, incide then on the liquid LQ by projection optical system PL.
Shown in Fig. 5 (a), incide among the exposure light on the liquid LQ, incide exposure light on the light shielding part 43 by shading, the exposure light that only incides on the light transmissive portion 44 of pin hole shape incides in the plano-convex lens 41 from par 41a.At this, because the refractive index of plano-convex lens 41 and the refractive index equal extent of liquid LQ, or be higher than the refractive index of liquid LQ, even if it is bigger therefore to incide the incident angle of the exposure light on the light transmissive portion 44, incide the exposure light on the light transmissive portion 44, can total reflection on the 41a of the par of the plano-convex lens in being exposed to light transmissive portion 44 41 yet, but incide in the plano-convex lens 41.In addition, incide the exposure light on the plano-convex lens 41, after by the curved face part 41b optically focused that is formed on the plano-convex lens 41, incide on the light receiving surface 42a, thereby received by light receiving element 42.
Like this, in this example, on the 41a of the par of plano-convex lens 41, form light shielding part 43 and light transmissive portion 44, make the exposure light that has passed through light transmissive portion 44 then not by being directly incident in the gas on the higher plano-convex lens of refractive index 41.Therefore, incide on the light transmissive portion 44, also can not have in the total reflection ground income plano-convex lens 41 even if having the exposure light of bigger incident angle.In addition, owing to will incide the light receiving surface 42a of the exposure light direct light receiving element 42 behind curved face part 41b optically focused on the plano-convex lens 41, even if therefore the exposure light that incides on the light transmissive portion 44 has bigger incident angle, also can receive with light receiving element 42.
Moreover illumination unevenness sensor 40 shown in Figure 5 is removed central part evaporation Cr metals such as (chromium) on the 41a of the par of plano-convex lens 41, thereby forms light shielding part 43 and light transmissive portion 44.Therefore shown in Fig. 5 (a), light transmissive portion 44 is formed as recess.At the liquid LQ that offers projection optical system PL circulation time by fluid Supplying apparatus 21 and liquid withdrawal system 22 and always, might upset flowing of liquid LQ because of the existence of light transmissive portion 44.In addition, in beginning when on plano-convex lens 41, providing liquid, also might be on light transmissive portion 44 entrapped air pockets.Below Shuo Ming illumination unevenness sensor shown in Figure 6 has been improved this example in this.
Fig. 6 is the figure that shows the variation of the illumination unevenness sensor on the exposure device that is located at the 2nd example of the present invention, (a) is sectional view, (b) is provided in a side of the stereographic map of the plano-convex lens on the illumination unevenness sensor.Illumination unevenness sensor 40 shown in Figure 6 possesses on plano-convex lens 45 this point different replacing being located at the plano-convex lens 41 on the illumination unevenness sensor 40 shown in Figure 5.As shown in Figure 6, plano-convex lens 45 similarly is formed with par 45a and curved face part 45b with the par 41a and the curved face part 41b that are formed on the plano-convex lens 41.But par 45a is not smooth on whole, but is formed with the protuberance 46 this point differences of upper planar near the central authorities of par 45a.
On the 45a of par, evaporation Cr metals such as (chromium) except protuberance 46, thus form light shielding part 43, be formed on the height of protuberance 46 of the central portion of par 45a, be set at the thickness of light shielding part 43 roughly the same.That is, in illuminance transducer shown in Figure 6 40, form protuberance 46 as the light transmissive portion 44 of pin hole shape.Therefore, as shown in Figure 6, illumination unevenness sensor 40 is configured in projection optical system PL below under the state of (Z direction), even if between projection optical system PL and wafer stage 15 (plano-convex lens 45), provide liquid LQ, liquid LQ can not flow in the light transmissive portion 44 yet, can not upset flowing of liquid LQ.In addition, can be on light transmissive portion 44 yet entrapped air pockets.Thereby, by using the illumination unevenness sensor 40 of formation shown in Figure 6, can carry out the higher instrumentation of accuracy.
Moreover in the 2nd example, protuberance 46 forms with plano-convex lens 45, but also can form respectively.In addition, also can form protuberance 46 and plano-convex lens 45 with different materials.At this moment, forming the material of protuberance 46, is the material that can see through exposure light, can use the refractive index equal extent with the material of plano-convex lens 45, perhaps is higher than the refractive index of liquid LQ, and is lower than the refractive index materials of the material of plano-convex lens 45.
(the 3rd example)
Secondly, the exposure device to the 3rd example of the present invention describes.With aforementioned the 2nd example similarly, it is the formation roughly the same with exposure device shown in Figure 1 that the integral body of the exposure device of this example constitutes, but the formation difference of exposure optical sensor 27.Moreover, in this example, mainly the illumination unevenness sensor that is located on the exposure optical sensor 27 is described.
Fig. 7 is the figure that shows that the summary of the illumination unevenness sensor on the exposure device be located at the 3rd example of the present invention constitutes, and (a) is sectional view, (b) is provided in a side of the open plate on the illumination unevenness sensor and the stereographic map of plano-convex lens.Shown in Fig. 7 (a), be located at the illumination unevenness sensor 50 on the exposure device of this example, comprise upper plate 51, plano-convex lens 52 and light receiving element 53 and constitute.
Shown in Fig. 7 (a) and (b), upper plate 51 possesses by the light with respect to the ArF quasi-molecule laser source in vacuum ultraviolet territory and has the synthetic quartz of high transmittance or the parallel flat 54 that fluorite constitutes.On a side's of this parallel flat 54 face, form light shielding part 55 removing evaporation Cr metals such as (chromium) on whole of central portion, the central portion that does not have evaporation Cr metals such as (chromium) is circular light transmissive portion 56.In addition, plano-convex lens 52 and plano-convex lens 41 shown in Figure 5 are by having formed par 52a and having had the synthetic quartz of curved face part 52b of curvature of regulation or the optical lens that fluorite constitutes similarly.
Upper plate 51, with the face that formed light shielding part 55 as downside, then so that the mode that the top 15a of itself and wafer stage 15 touches be mounted.In addition, plano-convex lens 52, with par 52a towards projection optical system PL, then so that light shielding part 55 mode of (being close to) that touches of itself and upper plate 51 be mounted.In addition, light receiving element 53 is and light receiving element shown in Figure 5 42 components identical, with with the curved face part 52b of light receiving surface 53a, and the approximate centre of light receiving surface 53a is configured in mode on the optical axis of plano-convex lens 52, is installed on the wafer stage 15 towards plano-convex lens 52.
Moreover, with the 2nd example similarly, also upper plate 51, plano-convex lens 52 and light receiving element 53 can be installed in the casing identical, and casing is located on the wafer stage 15 with casing shown in Figure 3 30.Under the situation of this formation,, and casing is installed on the wafer stage 15 in the corresponding to mode of top 15a of the top and wafer stage 15 of casing so that the mode that light shielding part 55 touches on casing is installed upper plate 51.Upper plate 51, and above the wafer stage 15 or casing above between, implement the waterproof countermeasure with encapsulant etc.
In the illumination unevenness sensor 50 of this formation, upper plate 51 plays and prevents that liquid LQ from immersing the effect in the illumination unevenness sensor 50.Illumination unevenness sensor 50 with this example, the illuminate condition that when the illuminate condition with illuminating optical system IS is set at the exposure-processed of carrying out for wafer W, sets, and at projection optical system PL with provide between the 15a above the wafer stage 15 under the state of liquid LQ, also can shine the instrumentation of irregular grade.
To projection optical system PL with provide between the 15a above the wafer stage 15 under the state of liquid LQ, incide the exposure light on the projection optical system PL, not in the leading section total reflection of projection optical system PL, but, incide then on the liquid LQ by projection optical system PL.Owing to be located at the refractive index equal extent of the refractive index of the parallel flat 54 on the upper plate 51 and liquid LQ or be higher than the refractive index of liquid LQ, therefore the exposure light that has passed through liquid LQ incides on the upper plate 51, and incides on the plano-convex lens 52 from the light that is formed on the light transmissive portion 56 on the upper plate 51.Incide the exposure light on the plano-convex lens 52, by being directed to light receiving surface 53a behind the curved face part 52b optically focused that is formed on the plano-convex lens 52, and received by light receiving element 53.
Moreover, in this example, because the par 52a of plano-convex lens 52 has been touched in the formation of upper plate 51 on the face of light shielding part 55, therefore can not make it pass through to use in the gas plano-convex lens 52 will be from the photoconduction of light transmissive portion 56 to light receiving element 53.In addition, in Fig. 7, owing to be formed on the thickness of the light shielding part (film) on a side the face of parallel flat 54, and on light transmissive portion 56, below parallel flat 54 and be formed with between above the plano-convex lens 52 under the situation in space, also can be with the medium beyond the gas in the space of this light transmissive portion 56, also be the medium of photopermeability, for example, liquid, supercritical fluid, paste, solid is filled between light transmissive portion and the optically focused parts, for example with film like.Perhaps can will see through the bonding agent of exposure light, be used for the joint of parallel flat 54 and plano-convex lens 52, this bonding agent is filled in the space of light transmissive portion 56.At this moment, be filled in the refractive index for exposure light of the material in the light transmissive portion 56, preferably and the refractive index equal extent of plano-convex lens 52 and parallel flat 54.And then, also can replace plano-convex lens 52 and plano-convex lens shown in Figure 8 57 is set.Fig. 8 is other the stereographic map of example of showing plano-convex lens that the illumination unevenness sensor on the exposure device be located at the 3rd example of the present invention is possessed.Plano-convex lens 57 shown in Figure 8, similarly be formed with par 57a and curved face part 57b with plano-convex lens 52 shown in Figure 7, but par 57a is not smooth on whole, but is formed with the protuberance 58 this point differences of upper planar near the central authorities of par 57a.
The height of this protuberance 58, the thickness that is set at and is formed on the light shielding part 55 on the upper plate 51 is roughly the same, and its footpath that directly is set at and is formed on the light transmissive portion 56 on the upper plate 51 is roughly the same.When the formation of the par 57a of the plano-convex lens 57 that makes this formation and upper plate 51 face of light shielding part 55 when touching, protuberance 58 is entrenched in the light transmissive portion 56 that is formed on the upper plate 51.Thus, incide among the exposure light on the parallel flat 54 of upper plate 51, incide the exposure light on the light transmissive portion 56, above protuberance 58, to incide mode on the plano-convex lens 57 by light transmissive portion 56.Moreover in Fig. 8, protuberance 58 and plano-convex lens 57 form, but also can form respectively.In addition, also can form protuberance 58 and plano-convex lens 57 with different materials.At this moment, forming the material of protuberance 58, is the material that can see through exposure light, preferably has the refractive index with the refractive index equal extent of the material of the material of parallel flat 54 and plano-convex lens 57.
In addition, in this example, though be to form light shielding part 55, the formation that plano-convex lens 52 (57) is touched at the bottom surface side of parallel flat 54, but also can go up and form light shielding part 55, parallel flat 54 is touched at the par 52a of plano-convex lens 52 (57) (57a).
(the 4th example)
Secondly, the exposure device to the 4th example of the present invention describes.With aforementioned the 2nd, the 3rd example similarly, it is the formation roughly the same with exposure device shown in Figure 1 that the integral body of the exposure device of this example constitutes, but the formation difference of exposure optical sensor 27.Moreover, in this example, also mainly the illumination unevenness sensor that is located on the exposure optical sensor 27 is described.Fig. 9 is a sectional view of showing the summary formation of the illumination unevenness sensor on the exposure device that is located at the 4th example of the present invention.As shown in Figure 9, be located at the illumination unevenness sensor 60 on the exposure device of this example, comprise parallel flat 61, plano-convex lens 62 and light receiving element 63 and constitute.
Parallel flat 61, the synthetic quartz or the fluorite that are had high transmittance by the light with respect to the ArF quasi-molecule laser source in vacuum ultraviolet territory constitute, the mode that is formed on the pin hole 31 on the casing shown in Figure 3 30 with covering be installed in casing 30 top 33 on.This parallel flat 61, and implemented the waterproof countermeasure with encapsulant etc. between 33 above the casing 30, the liquid LQ of the image planes side that offers projection optical system PL can not immersed in the illumination unevenness sensor 60 via pin hole 31.
Plano-convex lens 62 is the optical lenses that constitute with the footpath equal extent of pin hole 31 or slightly little synthetic quartz or fluorite by it directly is set at.This plano-convex lens 62 is configured in the inside of pin hole 31 in mode on the parallel flat 61 that the par is fitted in.In addition, light receiving element 63 is and light receiving element shown in Figure 5 42 components identical, with with the curved face part of light receiving surface 63a, and the approximate centre of light receiving surface 63a is configured in mode on the optical axis of plano-convex lens 62, is installed in casing 30 inside towards plano-convex lens 62.Moreover the area of the light receiving surface 63a of light receiving element 42 can suitably change according to the width of the light beam of the exposure light of incident.
In the illumination unevenness sensor 60 of this example, the illuminate condition that when the illuminate condition with illuminating optical system IS is set at the exposure-processed of carrying out for wafer W, sets, and above projection optical system PL and casing 30, provide between 33 under the state of liquid LQ, also can shine the instrumentation of irregular grade.To projection optical system PL with provide between 33 above the casing 30 under the state of liquid LQ, incide the exposure light on the projection optical system PL, not in the leading section total reflection of projection optical system PL, but, incide then on the liquid LQ by projection optical system PL.
Because the refractive index of parallel flat 61 and plano-convex lens 62 and the refractive index equal extent of liquid LQ can be higher than the refractive index of liquid LQ, therefore via liquid LQ incide among the exposure light on the parallel flat 61, towards the exposure light of pin hole 31, incide on the plano-convex lens 62 and by optically focused, and be directed to light receiving surface 63a, thereby received by light receiving element 63.Like this, in this example, incide exposure light on the liquid LQ, till penetrating, also by in the gas from plano-convex lens 62 from projection optical system PL.Therefore, incide on the pin hole 31, also can not taken in the plano-convex lens 62, and then can receive with light receiving element 63 by total reflection ground even if having the exposure light of bigger incident angle.Moreover, can prevent that liquid LQ under the situation about immersing of plano-convex lens 62, can not have parallel flat 61 on every side yet.
In addition, in example shown in Figure 9, plano-convex lens 62 is configured in the pin hole 31, and sticks on the parallel flat 61 that is installed on the casing 30.But, because the footpath of plano-convex lens 62 is about tens～tens μ m with pin hole 31 equal extent, so the processing of plano-convex lens 62 difficulty that becomes.In this case, be preferably on the parallel flat 61 and form the convex lens same, and parallel flat 61 is installed on the casing 30 in the modes that these convex lens are configured in the pin hole 31 with plano-convex lens 62.Moreover, under the thickness situation as thin as a wafer of the upper plate of casing 30, also can be below casing 30 on the bigger plano-convex lens of configuration.At this moment, with Fig. 7 (a) similarly, the light from pin hole 31 can be accumulated on the light receiving element.
(the 5th example)
Secondly, the exposure device to the 5th example of the present invention describes.With aforementioned the 2nd～the 4th example similarly, it is the formation roughly the same with exposure device shown in Figure 1 that the integral body of the exposure device of this example constitutes, but the formation difference of exposure optical sensor 27.Moreover, in this example, also mainly the illumination unevenness sensor that is located on the exposure optical sensor 27 is described.Figure 10 is a sectional view of showing the summary formation of the illumination unevenness sensor on the exposure device that is located at the 5th example of the present invention.As shown in figure 10, be located at the illumination unevenness sensor 70 on the exposure device of this example, comprise plano-convex lens 71 and light receiving element 72 and constitute.
Plano-convex lens 71, the synthetic quartz or the fluorite that are had high transmittance by the light with respect to the ArF quasi-molecule laser source in vacuum ultraviolet territory constitute, and it directly is set at bigger than the footpath that is formed on the pin hole 31 on the casing shown in Figure 3 30.This plano-convex lens 71 is fitted in par 71a the inboard of casing 30 on the formation position of pin hole 31.Thus, pin hole 31 becomes the state of being blocked by plano-convex lens 71, can prevent that liquid LQ is immersed in the illumination unevenness sensor 70 via pin hole 31.Moreover when plano-convex lens 71 being fitted in casing 30 inboard, the most handy encapsulant etc. is implemented the waterproof countermeasure.
In addition, light receiving element 72 is components identical with light receiving element 42 shown in Figure 5, with with the curved face part 71b of light receiving surface 72a, and the approximate centre of light receiving surface 72a is configured in mode on the optical axis of plano-convex lens 71, is installed in casing 30 inside towards plano-convex lens 72.In the illumination unevenness sensor 70 of this example, the illuminate condition that when the illuminate condition with illuminating optical system IS is set at the exposure-processed of carrying out for wafer W, sets, and above projection optical system PL and casing 30, provide between 33 under the state of liquid LQ, also can shine the instrumentation of irregular grade.
To projection optical system PL with provide between 33 above the casing 30 under the state of liquid LQ, incide the exposure light on the projection optical system PL, not in the leading section total reflection of projection optical system PL, but, incide then on the liquid LQ by projection optical system PL.Because the refractive index equal extent of the refractive index of plano-convex lens 71 and liquid LQ or be higher than the refractive index of liquid LQ, therefore incide among the exposure light on the liquid LQ, incide the exposure light on the pin hole 31, incide on the plano-convex lens 71 and by optically focused, and be directed to light receiving surface 72a, thereby received by light receiving element 72.
Like this, in this example, incide exposure light on the liquid LQ from projection optical system PL among, the exposure light that has passed through pin hole 31 is not by being directly incident in the gas on the higher plano-convex lens of refractive index 71.Therefore, incide on the pin hole 31, also can not taken in the plano-convex lens 71, and then can receive with light receiving element 72 by total reflection ground even if having the exposure light of bigger incident angle.
Moreover, in this example, with the 2nd example similarly, might upset flowing of liquid LQ because of the existence of pin hole 31, and then may make liquid LQ boiling, thereby in liquid LQ, produce bubble because of the generation of eddy current.In order to prevent these, can use plano-convex lens shown in Figure 8 57 as plano-convex lens 71, and be entrenched in the inboard that pin hole 31 interior modes stick on plano-convex lens 57 casing 30 with the protuberance 58 that is formed on the 57a of par.Perhaps also can in pin hole 31, fill the material that sees through exposure light.
In the 2nd of above explanation～the 5th example, with with plano- convex lens 41,45,52,57,62,71, situation about disposing discretely with light receiving element 42,53,63,72 is that example is illustrated, but absorption for the exposure light of doing one's utmost to avoid to cause by oxygen etc., also can make plano- convex lens 41,45,52,57,62,71, contact with light receiving element 42,53,63,72.In addition, in described example, be that example is illustrated with plano- convex lens 41,45,52,57,62,71 as the optically focused parts, but in addition also can use DOE (diffraction optical element), lenslet array, Fresnel lens, catoptron etc.
(the 6th example)
Secondly, the exposure device to the 6th example of the present invention describes.The exposure device of this example also is that whole formation is the formation roughly the same with exposure device shown in Figure 1, but the formation difference of exposure optical sensor 27.Moreover, the exposure optical sensor 27 that exposure device possessed of this example, with aforementioned the 2nd～the 5th example similarly, be the parts that carry out the instrumentation action via the liquid LQ of the image planes side of projection optical system PL.But, in this example, be that example describes mainly, but can certainly be applicable to described illumination unevenness sensor and aerial image measuring device described later with the exposure sensor that is located on the exposure optical sensor 27.
Figure 11 is the figure that shows the summary formation of the exposure sensor on the exposure device that is located at the 6th example of the present invention.Shown in Figure 11 (a), be located at the exposure sensor 80 on the exposure device of this example, comprise solar panel 81 and light receiving element 82 and constitute.Solar panel 81, the synthetic quartz or the fluorite that are had high transmittance by the light with respect to the ArF quasi-molecule laser source in vacuum ultraviolet territory constitute, shown in Figure 11 (a) and (b), on its one side (the not face that contacts with liquid LQ) 81a, be formed with micro-lens array 83.
Micro-lens array 83 for example is the optical element that is made of a plurality of micro lens that arrange along 2 directions of quadrature, circular, that have positive refractive power.Moreover micro-lens array 83 shown in Figure 11 only is an illustration, and the shape of micro lens is not limited to circle, also can be square, and its arrangement is not limited to the arrangement to 2 directions of quadrature, also can be dense arrangement.Micro-lens array 83 for example constitutes by implement the mode that etch processes forms the micro lens group on the one side of parallel plane glass plate.
Solar panel 81, with smooth face 81b that will be relative with the face 81a that has formed micro-lens array 83 towards projection optical system PL side (+Z direction), and make top 33 corresponding to modes of face 81b and casing 30 shown in Figure 3, be located in the opening 32 that is formed on the casing 30.Moreover, in this example, ND light filter 34 shown in Figure 3 is not set.Moreover, also can be that micro-lens array 83 is sticked on formation on the ND light filter 34, the formation of ND light filter perhaps is set between micro-lens array 83 and light receiving element 82.Implemented the waterproof countermeasure with encapsulant etc. between solar panel 81 and the casing 30, the liquid LQ of the image planes side that offers projection optical system PL can not immersed in the casing 30.
In addition, light receiving element 82 with light receiving surface 82a towards solar panel 81, and the mode of (Z direction) just down of approximate centre that the approximate centre of light receiving surface 82a is positioned at the central portion of solar panel 81 disposes.This light receiving element 82 in the mode that can be received by light receiving surface 82a by the major part of the light beam of solar panel 81 optically focused, is installed near solar panel 81 ground.Moreover, on the light receiving surface 82a of light receiving element 82, implemented AR coating for ArF laser.
When exposure sensor 80 instrumentations with this example shine the light quantity of the exposure light on the exposure area, different with the instrumentation that exposure sensor 37 with the 1st example carries out, the illuminate condition that sets in the time of can being set at the exposure-processed of carrying out for wafer W at illuminate condition with illuminating optical system IS, and at projection optical system PL with provide between 33 above the casing 30 under the state of liquid LQ and carry out.To projection optical system PL with provide between 33 above the casing 30 under the state of liquid LQ, incide the exposure light on the projection optical system PL, outermost light is not also in the leading section total reflection of projection optical system PL, but, incide then on the liquid LQ by projection optical system PL.
Because the refractive index equal extent of the refractive index of solar panel 81 and liquid LQ or be higher than the refractive index of liquid LQ, so the exposure light that incides on the liquid LQ incides on the solar panel 81.A plurality of micro lens that the wave front of exposure light is configured the micro-lens array 83 on the face 81a that is formed on solar panel 81 are cut apart two-dimensionally, assembled by the refraction action of micro lens simultaneously, the light receiving surface 82a that divided afterwards each wave front incides light receiving element 82 goes up and is received.
Like this, in this example, from projection optical system PL incide on the liquid LQ exposure light to till solar panel 81 penetrates also by the gas.Therefore, incide on the solar panel 81, also can not taken in the solar panel 81, and then can receive with light receiving element 82 by total reflection ground even if having the exposure light of bigger incident angle.In addition, because the area of opening 32 is bigger, if so exposure sensor, be made as the such simple lens of the employed plano-convex lens of the irradiation unevenness sensor that will be as previously mentioned illustrates in the 2nd, the 3rd, the 5th example 41,52,71, thereby be located on the opening 32 formation with the light optically focused of incident, the exposure sensor just maximizes, and undesirable condition occurring aspect carrying on wafer stage shown in Figure 1 15.In this example,, can make exposure sensor 80 small-sized/light weights by need not such simple lens micro-lens array 83.
Moreover, in the above description, the situation that is formed with micro-lens array 83 on the one side 81a of solar panel 81 is illustrated, but also can uses the solar panel that on two sides ( face 81a, 81b), is formed with micro-lens array.In addition, can also replace micro-lens array and use fly lens.In addition, when only on the one side 81a of solar panel 81, being formed with micro-lens array 83, as shown in figure 12, also can use solar panel 81 on the face 81b of projection optical system PL, formed the element of opening 84 respectively accordingly with a plurality of micro lens that constitute micro-lens array 83.Figure 12 is to show the stereographic map formed for the configuration example of the solar panel of the opening of micro-lens array.
Opening 84 shown in Figure 12 for example by evaporation Cr metals such as (chromium) on whole of face 81b, and will form with the etched mode in the corresponding position of each micro lens.Because opening 84 plays the effect of the diaphragm that limits the amount that incides the light beam on each micro lens, therefore it is had and ND light filter identical functions.In this example, because therefore the illuminate condition that sets when the illuminate condition of illuminating optical system IS is set at the exposure-processed of carrying out for wafer W from the viewpoint of protection solar panel 81 and light receiving element 82, is preferably formed as opening 84.Moreover, in this example, be illustrated for being located at the exposure sensor 80 of exposure on the optical sensor 27, but, also go for the illumination unevenness sensor for example by replacing plano-convex lens shown in Figure 5 41 to use having formed the solar panel of micro-lens array.
(the 7th example)
Secondly, the exposure device to the 7th example of the present invention describes.It is the formation roughly the same with exposure device shown in Figure 1 that the integral body of the exposure device of this example constitutes, but the formation difference of exposure optical sensor 27.Moreover, the exposure optical sensor 27 that exposure device possessed of this example, with aforementioned the 2nd～the 5th example similarly, be the element that carries out the instrumentation action via the liquid LQ of the image planes side of projection optical system PL.But, in this example, mainly the exposure sensor that is located on the exposure optical sensor 27 is described.
Figure 13 is the figure that shows the summary formation of the exposure sensor on the exposure device that is located at the 7th example of the present invention.As shown in figure 13, be located at the exposure sensor 85 on the exposure device of this example, comprise diffuser plate 86 and light receiving element 87 and constitute, diffuser plate 86 is located in the opening 32 that is formed on the casing 30.Diffuser plate 86 is made of synthetic quartz or fluorite, have and formed trickle concavo-convex face 86a and smooth face 86b, and with face 86b towards projection optical system PL side (+Z direction), and top 33 corresponding to modes of face 86b and casing 30 shown in Figure 3 are located at out in 32.Moreover, implemented the waterproof countermeasure with encapsulant etc. between diffuser plate 86 and the casing 30.Light receiving element 87, with light receiving surface 87a towards diffuser plate 86, and the mode of (Z direction) just down of approximate centre that the approximate centre of light receiving surface 87a is positioned at the central portion of diffuser plate 86 disposes.In addition, light receiving element 87 is configured to make the state of light receiving surface 87a near diffuser plate 86.On the light receiving surface 87a of this light receiving element 87, implemented AR coating for ArF laser.
When exposure sensor 85 instrumentations with this example shine the light quantity of the exposure light on the exposure area, with the 6th example similarly, the illuminate condition that when the illuminate condition with illuminating optical system IS is set at the exposure-processed of carrying out for wafer W, sets, and above projection optical system PL and casing 30, provide between 33 under the state of liquid LQ and carry out.Under this state, when exposure light incides on the projection optical system PL, the outermost light of exposure light can be in the leading section total reflection of projection optical system PL yet, but by projection optical system PL, incide then on the liquid LQ, and then incide refractive index and liquid LQ equal extent or be higher than on the diffuser plate 86 of liquid LQ.Incide the exposure light on the diffuser plate 86, from diffuser plate 86 ejaculations the time, be formed trickle concavo-convex face 86a diffusion, the light receiving surface 87a that incides light receiving element 87 afterwards goes up and is received.
Like this, in this example, owing to the exposure light that incides from projection optical system PL on the liquid LQ, to till diffuser plate 86 penetrates, also passing through the gas, incide on the diffuser plate 86 even if therefore have the exposure light of bigger incident angle, can be by total reflection yet.In addition, exposure light is being spread when diffuser plate 86 penetrates.Thus, can receive exposure light with more light receiving element 87 with bigger incident angle.In addition, with the 6th example similarly, can seek the miniaturization of exposure sensor 85.
Moreover, in the above description, be illustrated as example to use the situation that only on one side 86a, has formed trickle concavo-convex diffuser plate 86, formed trickle concavo-convex diffuser plate 86 but also can use on two sides (86a, 86b).In addition, thus can also replace described diffuser plate 86 and use to have formed and make the exposure optical diffraction of incident incide the diffractive plate of the DOE (diffraction optical element) on the light receiving element by diffraction.At this, DOE, preferably with the light beam less with respect to incident angle, angle of diffraction is less, and with respect to the bigger light beam of incident angle, diffraction becomes big mode and designs.Under the situation of using diffractive plate, both can use the diffractive plate that only on one side, has formed DOE, also can use the diffractive plate that on the two sides, has formed DOE.In addition, described diffuser plate and diffractive plate also go for the illumination unevenness sensor.
(the 8th example)
Secondly, the exposure device to the 8th example of the present invention describes.It is the formation roughly the same with exposure device shown in Figure 1 that the integral body of the exposure device of this example constitutes, but the formation difference of exposure optical sensor 27.Moreover, the exposure optical sensor 27 that exposure device possessed of this example, with aforementioned the 2nd～the 5th example similarly, be the element that carries out the instrumentation action via the liquid LQ of the image planes side of projection optical system PL.But, in this example, mainly the exposure sensor that is located on the exposure optical sensor 27 is described.
Figure 14 is the figure that shows the summary formation of the exposure sensor on the exposure device that is located at the 8th example of the present invention.As shown in figure 14, be located at the exposure sensor 90 on the exposure device of this example, comprise fluorescent plate 91 and light receiving element 92 and constitute.Fluorescent plate 91 is so that top corresponding to mode is located in the opening 32 that is formed on the casing 30, and by the exposure optical excitation of incident, produces and the fluorescence of exposure light different wave length or the element of phosphorescence.That is, fluorescent plate 91 is to have the exposure light of the wavelength in vacuum ultraviolet territory, the element of the light of wavelength conversion precedent such as viewing area.Fluorescent plate 91 for example, absorbs exposure light and produces the light transmission plate that wavelength is longer than the organic color material of the fluorescence of exposure light or phosphorescence thereby can use to contain, or in surface-coated the light transmission plate of organic pigment.At this moment, light receiving element can suitably be selected according to the sensitivity of wavelength of fluorescence.
Moreover, between fluorescent plate 91 and casing 30, implemented the waterproof countermeasure with encapsulant etc.Light receiving element 92 has the characteristic that receives with exposure light wavelength different wavelength regions (for example, viewing area).This light receiving element 92, the approximate centre that is configured in light receiving surface 92a are positioned at (the Z direction) just down of approximate centre of the central portion of fluorescent plate 91, and on the position near fluorescent plate 91.On the light receiving surface 92a of light receiving element 92, implemented AR coating for the light of the viewing area that comprises fluorescence and phosphorescence.
When exposure sensor 90 instrumentations with this example shine the light quantity of the exposure light on the exposure area, with the 6th, the 7th example similarly, the illuminate condition that when the illuminate condition with illuminating optical system IS is set at the exposure-processed of carrying out for wafer W, sets, and above projection optical system PL and casing 30, provide between 33 under the state of liquid LQ and carry out.Before the light quantity of instrumentation exposure light, obtain behind the light quantity that incides on the fluorescent plate 91 and the wavelength conversion relation of the light quantity of the light that penetrates from fluorescent plate 91 in advance.
Under the state of the illuminate condition when the illuminate condition with illuminating optical system IS is set at exposure, when exposure light incides on the projection optical system PL, exposure light is not in the leading section total reflection of projection optical system PL, but, incide on the fluorescent plate 91 via liquid LQ then by projection optical system PL.When exposure light incided on the fluorescent plate 91, part or all of its light quantity absorbed by fluorescent plate 91, and sent fluorescence or the phosphorescence that has with the corresponding light quantity of light quantity that absorbs.This fluorescence or phosphorescence have and the different wavelength of exposure light wavelength, penetrate from the direction of fluorescent plate 91 to the incident angle that does not exist with ... exposure light, and the light receiving surface 92a that incides light receiving element 92 afterwards goes up and is received.
Like this, in this example, incide exposure light on the liquid LQ from projection optical system PL, till penetrating from fluorescent plate 91, also, incide on the fluorescent plate 91 even if therefore have the exposure light of bigger incident angle not by in the gas, can be by total reflection yet.In addition, even if the bigger exposure light incident of incident angle because this exposure light is transformed into fluorescence or the phosphorescence with different wave length, penetrate to the direction different with incident angle then, so the reception on the light receiving element 92 becomes easy.In addition, with the 6th, the 7th example similarly, can seek the miniaturization of exposure sensor 90.
Moreover, at the exposure light that incides on the fluorescent plate 91, all be not transformed under the situation of the fluorescence of different wave length or phosphorescence, after seeing through fluorescent plate 91, the part of exposure light incides on the light receiving element 92.As previously mentioned, because the light-receiving characteristic of light receiving element 92 is the characteristics that receive the light of the wavelength region may different with exposure light, also no problem substantially even if the light that therefore exposes incides on the light receiving element 92.But, since the exposure light that has seen through fluorescent plate 91 incide on the light receiving element 92, thereby for example produce under the situation of the instrumentation error that causes by heating etc., be preferably between fluorescent plate 91 and the light receiving element 92, setting makes the light transmission of the wavelength region may that is included on the fluorescent plate 91 fluorescence that produces or phosphorescence, and will comprise the light filter of the light shading in exposure light wavelength zone.
(the 9th example)
Secondly, the exposure device to the 9th example of the present invention describes.It is the formation roughly the same with exposure device shown in Figure 1 that the integral body of the exposure device of this example constitutes, but the formation difference of exposure optical sensor 27.Moreover, the exposure optical sensor 27 that exposure device possessed of this example, with aforementioned the 2nd～the 5th example similarly, being the element that carries out the instrumentation action via the liquid LQ of the image planes side of projection optical system PL, is that example describes with the illumination unevenness sensor that is located on the exposure optical sensor 27 mainly.Certainly, this example also goes for described exposure sensor and aerial image measuring device described later.
Figure 15 is the figure that shows the summary formation of the illumination unevenness sensor on the exposure device that is located at the 9th example of the present invention.Shown in Figure 15 (a), be located at the illumination unevenness sensor 100 on the exposure device of this example, comprise guided wave parts 101 and light receiving element 102 and constitute.Guided wave parts 101, it is right cylinder with footpath also bigger than the footpath that is formed on the pin hole 31 on the casing shown in Figure 3 30, so that the center of its central shaft and pin hole 31 is roughly consistent, make an end 101a touch the state configuration of below pin hole 31 (Z direction) then.
These guided wave parts 101 are to be made of synthetic quartz or fluorite, and one side makes from an end 101a and incides inner exposure light in periphery (with the border of air) total reflection, the element that penetrates from other end 101b behind guided wave.As guided wave parts 101, for example can use a kind of bar-shaped integrator or optical fiber as optical integrator.Moreover the part that guided wave parts 101 and casing 30 touch has been implemented the waterproof countermeasure with encapsulant etc.Light receiving element 102 has the characteristic that receives the light that comprises exposure light wavelength zone, so that the state configuration that the other end 101b of its light receiving surface 102a and guided wave parts 101 touches.On the light receiving surface 102a of light receiving element 102, implemented AR coating for ArF laser.
At this, the light receiving surface 102a of light receiving element 102 and the other end 101b of guided wave parts 101 are touched, go up and receive in order to make the light receiving surface 102a that incides light receiving element 102 from the exposure light that other end 101b penetrates, emergence angle is bigger.Promptly, owing to penetrate exposure light with various angles from the other end 101b of guided wave parts 101, therefore under the state that the light receiving surface 102a of the other end 101b of guided wave parts 101 and light receiving element 102 separates, the whole of exposure light that one side diffusion one side is penetrated are incided on the light receiving surface 102a, particularly can not receive the bigger exposure light of emergence angle.
When illumination unevenness sensor 100 instrumentations with this example shine the light quantity of the exposure light on the exposure area, with the 6th～the 8th example similarly, the illuminate condition that when the illuminate condition with illuminating optical system IS is set at the exposure-processed of carrying out for wafer W, sets, and above projection optical system PL and casing 30, provide between 33 under the state of liquid LQ and carry out.Under this state, when exposure light incides on the projection optical system PL, exposure light is in the leading section total reflection of projection optical system PL, but by projection optical system PL, incides in the guided wave parts 101 from an end 101a via liquid LQ and pin hole 31 then.The exposure light one side that incides in the guided wave parts 101 is advanced in guided wave parts 101 in the periphery reflection one side of guided wave parts 101, and is received by the light receiving element 102 of the state configuration that touches with the other end 101b with guided wave parts 101.
Like this, in this example, incide on the liquid LQ, and passed through the exposure light of pin hole 31, not by inciding in the gas on the guided wave parts 101 from projection optical system PL.Therefore, the major part that comprises the exposure light on the exposure area of the exposure light that has bigger incident angle and shine can be received.Moreover, in the above description, to utilizing the refringence of guided wave parts 101 and air, one side is illustrated the situation of a guided wave of the exposure all outside total reflections of light, if but exposure light is less with respect to the incident angle of periphery, exposure light is just penetrated to the outside from periphery.Therefore, be preferably in evaporation Cr metals such as (chromium) on the periphery of guided wave parts 101.
In addition, on the formation of illumination unevenness sensor 100, the situation that guided wave parts 101 and light receiving element 102 are disposed discretely of having to is arranged also.In this case, shown in Figure 15 (b), preferably the shape of other end 101b is made curve form (lens shape) thereby the emergence angle of the exposure light of in guided wave parts 101, advancing of reducing to the minimum.And then, in described example, columned guided wave parts 101 are illustrated, but also can use it to be shaped as quadrangular, other the element of shape.
(the 10th example)
Secondly, the exposure device to the 10th example of the present invention describes.It is the formation roughly the same with exposure device shown in Figure 1 that the integral body of the exposure device of this example constitutes, but the formation difference of exposure optical sensor 27.Moreover, the exposure optical sensor 27 that exposure device possessed of this example, with aforementioned the 2nd～the 5th example similarly, be the element that carries out the instrumentation action via the liquid LQ of the image planes side of projection optical system PL, mainly the illumination unevenness sensor that is located on the exposure optical sensor 27 described.
Figure 16 is the figure that shows the summary formation of the illumination unevenness sensor on the exposure device that is located at the 10th example of the present invention.As shown in figure 16, be located at the illumination unevenness sensor 110 on the exposure device of this example, comprise as a kind of integrating sphere 111 of optical integrator and light receiving element 112 and constitute.Integrating sphere 111 is made of synthetic quartz or fluorite, its part is flatly cut, thereby form incident section 111a and the 111b of outgoing portion.
Incident section 111a, it directly is set at also bigger than the footpath that is formed on the pin hole 31 on the casing shown in Figure 3 30.Integrating sphere 111, so that the center of incident section 111a is roughly consistent with the center of pin hole 31, the state that the peripheral part of the periphery of pin hole 31 and incident section 111a is touched is configured in the below (Z direction) of pin hole 31.Moreover the part that incident section 111a and casing 30 touch has been implemented the waterproof countermeasure with encapsulant etc.
The 111b of outgoing portion forms the footpath of the size of regulation on the position of regulation with respect to incident section 111a.The formation position of the 111b of outgoing portion, for example be by incident section 111a the center and perpendicular to the straight line of incident section 111a and the center by the 111b of outgoing portion and perpendicular to the position of the straight line quadrature of the 111b of outgoing portion.In addition, in example shown in Figure 16, on the 111b of outgoing portion, be provided with the guidance part 111c that is used for the exposure light reflection back direct light receiving element 112 that emergence angle is bigger.
Light receiving element 112 has the characteristic that receives the light comprise exposure light wavelength zone, with the state configuration of its light receiving surface 112a towards the 111b of outgoing portion.On the light receiving surface 112a of light receiving element 112, implemented AR coating for ArF laser.Moreover, at this, thereby to guidance part 111c is set on the 111b of outgoing portion of integrating sphere 111 formation that integrating sphere 111 and light receiving element 112 dispose discretely is illustrated, thereby but also can is to omit the formation that the 111b of outgoing portion that guidance part 111c makes the light receiving surface 112a of light receiving element 112 and integrating sphere 111 touches.
When illumination unevenness sensor 110 instrumentations with this example shine the light quantity of the exposure light on the exposure area, with aforementioned the 6th～the 9th example similarly, the illuminate condition that when the illuminate condition with illuminating optical system IS is set at the exposure-processed of carrying out for wafer W, sets, and above projection optical system PL and casing 30, provide between 33 under the state of liquid LQ and carry out.Under this state, when exposure light incided projection optical system PL and goes up, exposure light was in the leading section total reflection of projection optical system PL, but by projection optical system PL, then via liquid LQ and pin hole 31, not by inciding in the integrating sphere 111 from incident end 111a in the gas.Incide exposure light on the integrating sphere 111 at the periphery multipath reflection of integrating sphere 111, finally penetrate from exit end 111b.Among the exposure light that penetrates from exit end 111b, less being directly incident on the light receiving surface 112a of emergence angle, and bigger after being guided the 111c of portion reflection, the inciding on the light receiving surface 112 and be received of emergence angle.
Like this, in this example, incide on the liquid LQ, and passed through the exposure light of pin hole 31, also not by inciding in the gas on the integrating sphere 111 from projection optical system PL.Therefore, incide on the incident end 111a, also can finally can not received by total reflection with light receiving element 112 even if having the exposure light of bigger incident angle.Moreover, with aforementioned the 9th example similarly, be preferably in the integrating sphere 111 evaporation Cr metals such as (chromium) on the whole of removing incident section 11a and the 111b of outgoing portion.
(other example)
In addition, in described the 2nd～the 5th example, with as the optically focused parts of the light optically focused that will expose and the situation that possesses 1 plano- convex lens 41,45,52,57,62,71 is that example is illustrated, in described the 6th～the 10th example, to as being used to make exposure light to incide optical system on the light receiving element, comprise that the formation of solar panel 81, diffuser plate 86, fluorescent plate 91, guided wave parts 101 and integrating sphere 111 is illustrated.But, preferably between plano- convex lens 41,45,52,57,62,71 and light receiving element, and, between solar panel 81, diffuser plate 86, fluorescent plate 91, guided wave parts 101 and integrating sphere 111 and the light receiving element, a plurality of lens are set, thus the formation of the direct light receiving elements such as light that will expose.
Figure 17 is the figure of variation that shows the illumination unevenness sensor 40 that exposure device possessed of the 2nd example.In example shown in Figure 17,, between plano-convex lens 41 and light receiving element 42, be provided with 2 lens 121,122 in order to be transformed into directional light by bigger exposure light from the exposure light, particularly incident angle of plano-convex lens 41 more simply.By lens 121,122 are set, will be transformed into the exposure photoconduction of directional light to light receiving element 42 between plano-convex lens 41 and light receiving element 42.In the 3rd～the 10th example, also can use such lens.Moreover the number of lens can be arbitrarily.
In addition, in described the 2nd～the 10th example, the illuminate condition that sets when being set at the exposure-processed of carrying out for wafer W at illuminate condition with illuminating optical system IS, and provide under the state of liquid LQ to the image planes side of projection optical system PL, the irregular situation of instrumentation illumination is that example is illustrated.But, in these examples, with the 1st example similarly, can there be image planes side to provide under the state of liquid LQ to projection optical system PL yet, thereby go up to adjust the mode of beam distribution of the exposure light of exit facet CJ by the exit facet CJ that the aperture diaphragm 8e that will have minimum σ is configured in the 2nd fly lens 7, the expose adjustment of aperture angle of light, instrumentation even light quantity etc. not then.
In addition, in exposure device shown in Figure 1,, also can be configured in respectively on the wafer stage 15 though illumination unevenness sensor and exposure sensor are located in the casing 30.In addition, in the recovery for the ease of liquid LQ, and make the face that contacts with liquid (top) of exposure optical sensor 27 become under the hydrophobic situation, because the irradiation of exposure light (ultraviolet ray), its hydrophobicity might deterioration.Thereby, using the face contact with liquid LQ is that hydrophobic sensor is when carrying out instrumentation, for example can use the spy to open (corresponding United States Patent (USP) 6 2001-144044 number, 730,925) disclosed, energy (light quantity) adjuster that possesses a plurality of ND light filters, the light quantity of exposure light is attenuated to smaller or equal to 50% of maximum amount, it is desirable to smaller or equal to 20%.
Moreover, in described example, to being used for the irregular illumination unevenness sensor of the not even integral light amount of instrumentation illumination, with be used for the exposure sensor of light quantity (exposure) of exposure light that instrumentation shines the image planes side of projection optical system PL and be illustrated, but the present invention also goes for United States Patent (USP) 6,650, the 399 disclosed sensors that are used for the instrumentation wave aberration, the spy opens the disclosed aerial image measurement sensor that is used for instrumentation imaging characteristic etc. of 2002-14005 communique (corresponding U.S. Patent Publication 2002/0041377), Te Kaiping 11-238680 communique and the international disclosed sensor that can load and unload with respect to the substrate objective table of No. 02/063664 communique (corresponding U.S. Patent Publication 2004/0090606) etc. that discloses, even if under the bigger situation of the numerical aperture of projection optical system, also can receive the exposure light that has passed through projection optical system, and can carry out various instrumentations with the precision of needs.Moreover, as long as specified by this world application or being allowed by the law of the country of selection, just quote the part of the disclosure of these patent gazettes as the record of this paper.
(the 11st example)
Below, with reference to the exposure device of description of drawings the 11st example of the present invention.Figure 20 is a summary pie graph of showing an example of exposure device of the present invention.
In Figure 20, exposure device EX, possesses the mask objective table MST that supports mask M, the substrate objective table PST of supporting substrate P, be supported on the illuminating optical system IL of the mask M on the mask objective table MST with exposure light EL irradiation, will be with the figure of the mask M of exposure light EL irradiation as the projection optical system PL of projection exposure on the substrate P that is supported on the substrate objective table PST, the control device CONT of the action of unified control exposure device EX integral body and is connected that control device CONT goes up, the memory storage MRY of the various information of the relevant exposure-processed of storage.And then exposure device EX possesses the aerial image measuring device 270 of the instrumentation of the imaging characteristic (optical characteristics) that is used for projection optical system PL.Aerial image measuring device 270 possesses via the slit plate 275 image planes side that is configured in projection optical system PL, that have slit portion 271, receives the optical receiver 290 of the light (exposure light EL) that has passed through projection optical system PL.
The exposure device EX of this example, be to improve the exploring degree in order substantially to shorten exposure wavelength, substantially enlarge simultaneously depth of focus, thereby be suitable for the liquid immersion exposure apparatus of immersion method, the liquids recovery mechanism 220 that possesses the liquid LQ on liquid feed mechanism 210 that liquid LQ is provided on the substrate P and recovery substrate P.Exposure device EX, at least the figure with mask M look like to be transferred on the substrate P during in, the liquid LQ that utilization provides from liquid feed mechanism 210, (partly) formation liquid soaks regional AR2 on the part of the AR1 of view field on the substrate P, that comprise projection optical system PL.Specifically, exposure device EX, by between the surface of the optical element 260 of the front (image planes side) of projection optical system PL and substrate P, filling up liquid LQ, and via liquid LQ between this projection optical system PL and the substrate P and projection optical system PL irradiation exposure light EL, thereby the figure of mask M is looked like to be projected in mode on the substrate P, exposure base P.
In this example, with as exposure device, use one side make mask M and substrate P on the direction of scanning with the same moved further of different directions from each other (in the other direction), the situation that one side will be formed on the scanning exposure apparatus (so-called scanning stepping exposure device) of graph exposure on substrate P on the mask M is that example describes.In the following description, to be made as Z-direction with the corresponding to direction of optical axis AX of projection optical system PL, in plane perpendicular to Z-direction, the synchronous moving direction (direction of scanning) of mask M and substrate P is made as X-direction, will be made as Y direction perpendicular to the direction (non-direction of scanning) of Z-direction and X-direction.In addition, with X-axis, Y-axis, be that the direction of center rotation (inclination) is made as θ X, θ Y and θ Z direction respectively with the Z axle.Moreover, be included in the wafer that has been coated with on the semiconductor wafer as the photoresist of photosensitive material at this said " substrate ", " mask " comprises and formed the reduced reticle mask that is projected in the component graphics on the substrate.
Illuminating optical system IL is that light beam (laser beam) LB that will penetrate from light source 201 is transformed into exposure light EL, and is supported on the system of the mask M on the mask objective table MST with exposure light EL irradiation.As the exposure light EL that penetrates from illuminating optical system IL, for example can use from bright line (g line, h line, i line) and KrF excimer laser extreme ultraviolet light (DUV light) or the ArF excimer laser (wavelength 193nm) and the F such as (wavelength 248nm) in the ultraviolet territory that mercury vapor lamp penetrates 2Laser (wavelength 157nm) equal vacuum ultraviolet light (VUV light) etc.In this example, use the ArF excimer laser.
In this example, on liquid LQ, use pure water.Pure water not only can see through the ArF excimer laser, for example can also see through bright line (g line, h line, i line) and KrF excimer laser extreme ultraviolet lights (DUV light) such as (wavelength 248nm) from the ultraviolet territory that mercury vapor lamp penetrates.
The light source 201 of this example is the quasi-molecule laser source that penetrates ArF excimer laser (wavelength 193nm), by control device CONT control that luminous the opening of its laser instrument closed, centre wavelength, spectral half width and repetition frequency etc.
Illuminating optical system IL possesses beam shaping optical system 202, optical integrator 203, irradiation system aperture stop plate 204, relay optical system 206,208, permanent mask screen (maskblind) 207A, movable mask screen 207B, mirror 209 and collector lens 230 etc.In this example, used fly lens as optical integrator 203, but also can be bar-shaped (inner face reflection-type) integrator or diffraction optical element etc.In beam shaping optical system 202, comprise be used for at light source 201 by the section shape of the laser beam LB of pulsed illumination, with the mode shaping on the optical integrator 203 that incides the light path rear that is located at this laser beam LB effectively, for example cylindrical lens or beam spread device etc.Optical integrator (fly lens) 203 is configured on the light path of the laser beam LB that penetrates from beam shaping optical system 202, for uniform Illumination Distribution irradiation mask M, forms the area source by a plurality of pointolites (light source picture) formation, i.e. 2 secondary light sources.
Near the exiting side focal plane of optical integrator 203, dispose the irradiation system aperture stop plate 204 that constitutes by disk-like member.On this irradiation system aperture stop plate 204, with equal angles roughly at interval, for example dispose the aperture diaphragm (common diaphragm) that constitutes by common circular open, constitute and be used to dwindle aperture diaphragm (little σ diaphragm) by less circular open as the σ value of coefficient of coherence, the aperture diaphragm (annular diaphragm) of the annular of annular irradiation usefulness, and the distortion aperture diaphragm that a plurality of openings are disposed prejudicially (being also referred to as the quadruple utmost point irradiation diaphragm of SHRINC) etc. that is used to be out of shape the light source method.This irradiation system aperture stop plate 204, drive units such as motor 231 rotations by controlled device CONT control thus, can be configured in any one aperture diaphragm on the light path of exposure light EL selectively.
Moreover, in this example, though carry out the adjustment of the light intensity distributions on the pupil face of illuminating optical system IL with irradiation system aperture stop plate 204, also can be with disclosed other the optical system of United States Patent (USP) 6,563,567.Moreover, as long as specified by this world application or being allowed by the law of the country of selection, just quote the part of these disclosed contents as the record of this paper.
On the light path of the exposure light EL that has passed through irradiation system aperture stop plate 204, dispose little and the optical splitter 205 that transmissivity is big of reflectivity, and then on the light path in the wings, dispose relay optical system (206,208) in the mode that mask screen 207A, 207B are clipped in the middle.Permanent mask screen 207A is configured in from the conjugate planes with respect to the picture surface of mask M and makes a little on its face that defocuses, and is formed with the rectangular aperture that limits the irradiation area IA on the mask M.In addition, near this permanent mask screen 207A, dispose movable mask screen 207B, movable mask screen 207B have with direction of scanning (X-direction) and with the non-direction of scanning (Y direction) of its quadrature position of corresponding direction and the peristome of variable-width respectively, by further limiting irradiation area IA via this movable mask screen 207B when the beginning of scan exposure and when finishing, just can prevent the exposure of useless part.In addition, in this example, movable mask screen 207B, the setting of the irradiation area when also being used for aerial image instrumentation described later.On the other hand, on the light path of the exposure light EL of optical splitter 205 reflections in illuminated optical system IL, dispose collector lens 232, and by good, and the integrator sensor 233 that has light receiving elements such as the PIN type photodiode formation of higher answer frequency for the pulsed illumination of detection light source 201 in the sensitivity of extreme ultraviolet territory.
If the explanation effect of the illuminating optical system IL of formation by this way simply, be exactly by the laser beam LB of pulsed illumination from light source 201, incide on the beam shaping optical system 202, then this with the mode on the optical integrator 203 that incides the rear effectively with its section shape shaping after, incide on the optical integrator 203.Thus, go up formation 2 secondary light sources at the exiting side focal plane (the pupil face of illuminating optical system IL) of optical integrator 203.The exposure light EL that penetrates from this 2 secondary light source, behind any one aperture diaphragm that has passed through on the irradiation system aperture stop plate 204, it is big and on the optical splitter 205 that reflectivity is little to incide transmissivity.Seen through the exposure light EL of this optical splitter 205, behind the peristome and movable mask screen 207B of the rectangle that has passed through permanent mask screen 207A via the 1st relay lens 206, by the 2nd relay lens 208, then by mirror 209 with light path to the vertical lower bending.By mirror 209 bendings the exposure light EL of light path, via collector lens 230, remain on the irradiation area IA of the mask M on the mask objective table MST with the irradiation of uniform Illumination Distribution.
On the other hand, exposure light EL by optical splitter 205 reflects is integrated device sensor 233 via collector lens 232 and receives the light-to-current inversion signal of integrator sensor 233, the signal processing apparatus with peak holding circuit and A/D transducer via figure does not show offers control device CONT.In this example, the instrumentation value of integrator sensor 233, except being used for exposure control, also be used for calculating for the exposure of projection optical system PL, this exposure is used for substrate reflectivity (output of the reflectivity watch-dog that this can not show according to the output of integrator sensor and figure is obtained) and is absorbed the calculating of variable quantity of the imaging characteristic that obtains by the irradiates light of projection optical system PL.In this example, with the interval of regulation,, calculate exposure according to the output of integrator sensor 233, and this result of calculation is made the irradiation resume by control device CONT, be stored in then in the memory storage MRY.
Mask objective table MST can keep and mobile mask M, for example uses vacuum suction (or Electrostatic Absorption) permanent mask M.Mask objective table MST, be supported on non-contactly on the mask base 255 via gas bearing (air bearing) as non-contact bearing, by comprising the mask objective table drive unit MSTD of linear motor etc., can be in plane perpendicular to the optical axis AX of projection optical system PL, promptly two dimension moves and rotates a little along θ Z direction in the XY plane.And mask objective table MST can move along the sweep velocity of X-direction with appointment on mask base 255, has the shift motion of X-direction of optical axis AX of the whole face crosscut projection optical system at least as far as possible PL of mask M.
On mask objective table MST, be provided with moving lens 241.In addition, on the position relative, be provided with laser interferometer 242 with moving lens 241.The rotation angle of the position of the two-dimensional directional of the mask M on the mask objective table MST and θ Z direction (rotation angle that according to circumstances also comprises θ X, θ Y direction) by laser interferometer 242 instrumentation in real time, and is exported to control device CONT with the instrumentation result.Control device CONT by the mode that the instrumentation result according to laser interferometer 242 drives mask objective table drive unit MSTD, controls the position that is supported on the mask M on the mask objective table MST.
Projection optical system PL, be with graphic projection exposure the system on substrate P of the projection multiplying power β that stipulates with mask M, a plurality of optical elements by the optical element that comprises the leading section that is located at the substrate P side (lens) 260 constitute, and these optical elements are supported by lens barrel PK.In this example, projection optical system PL is that projection multiplying power β is for example 1/4 or 1/5 scaled-down version.Moreover projection optical system PL also can be any one of times type such as grade and scale-up version.In addition, projection optical system PL can also be any one of refractive, reflection-type, reflection-refraction type.
The optical element 260 of the leading section of the projection optical system PL of this example is kept by lens kit 262, keeps the lens kit 262 of this optical element 260 and the leading section of lens barrel PK to be linked together by connect mechanism 261.The liquid LQ that liquid soaks regional AR2 contacts with optical element 260.Optical element 260 usefulness fluorites form.Because the compatibility of fluorite and water is higher, so liquid LQ is close on roughly whole of liquid contact surface 260a of optical element 260.Promptly, in this example, because higher liquid (water) LQ of compatibility with the liquid contact surface 260a of optical element 260 is provided, therefore the close property of the liquid contact surface 260a of optical element 260 and liquid LQ is higher, and the enough liquid LQ of energy fill up the light path between optical element 260 and the substrate P reliably.Moreover optical element 260 also can be the quartz higher with the compatibility of water.In addition, also can on the liquid contact surface 260a of optical element 260, implement hydrophiling (lyophilyization) and handle, thus the compatibility of further raising and liquid LQ.
Substrate objective table PST can keep and moving substrate P, comprises XY objective table 253 and carries the Z inclination objective table 252 on XY objective table 253 and constitute.XY objective table 253 is supported on the top top of objective table base 254 non-contactly via the gas bearing as non-contact bearing (air bearing) do not shown of figure.Under XY objective table 253 (the substrate objective table PST) state that quilt supports non-contactly on respect to objective table base 254, by comprising the substrate objective table drive unit PSTD of linear motor etc., can be in plane perpendicular to the optical axis AX of projection optical system PL, promptly two dimension moves and along the small rotation of θ Z direction in the XY plane.Z is tilted objective table 252 lift-launchs on this XY objective table 253, substrate holder 251 is carried on Z inclination objective table 252.Keep substrate P by this substrate holder 251 by vacuum suction etc.Z inclination objective table 252 is can be provided with along the mode that Z-direction, θ directions X and θ Y direction move by driver described later.The substrate objective table drive unit PSTD that comprises described driver is controlled by control device CONT.Substrate objective table PST, the focal position of control basal plate P (Z position) and pitch angle, with automatic focus mode and automatic leveling mode the surface of substrate P and the image planes of projection optical system PL are matched, carry out the location of the X-direction and the Y direction of substrate P simultaneously.
In addition, on substrate objective table PST (substrate holder 251), be provided with accessory plate 257 in the mode of surrounding substrate P.Accessory plate 257 has and the plane that remains on the surperficial roughly the same height of the substrate P on the substrate holder 251.When the fringe region of exposure base P, also can liquid LQ be remained under the projection optical system PL by accessory plate 257.
Moreover, though accessory plate 257 only be formed on substrate holder 251 around, but also can use the top mode that roughly becomes a plane with substrate objective table PST, also dispose accessory plate 257 around the aerial image measuring device 270 and between substrate holder 251 and the aerial image measuring device 270.Like this, even if the top of aerial image measuring device 270 soaks regional AR2 less than liquid, also can liquid LQ be remained under the projection optical system PL by accessory plate 257.
On substrate objective table PST (Z inclination objective table 252), be provided with moving lens 243.In addition, on the position relative, be provided with laser interferometer 244 with moving lens 243.The position of the two-dimensional directional of the substrate P on the substrate objective table PST and rotation angle be by laser interferometer 244 instrumentation in real time, and the instrumentation result is exported to control device CONT.Control device CONT is supported on the location of the substrate P on the substrate objective table PST by drive the mode of the substrate objective table drive unit PSTD that comprises linear motor etc. according to the instrumentation result of laser interferometer 244.
In addition, exposure device EX possesses the focus detection system 245 of the position of detecting the surface be supported on the substrate P on the substrate objective table PST (substrate holder 251).Focus detection system 245 possesses via liquid LQ and is detected the light-projecting portion 245A that uses light beam and be received in the catoptrical light receiver 245B that light beam is used in the described detection of reflecting on the substrate P to projection on the substrate P by vergence direction.The light-receiving result of focus detection system 245 (light receiver 245B) exports to control device CONT.Control device CONT can detect the positional information of the Z-direction on substrate P surface according to the testing result of focus detection system 245.In addition, by throw a plurality of detection light beams by light-projecting portion 245A, can detect the θ X of substrate P and the inclination information of θ Y direction.Moreover, formation as focus detection system 245, for example can use the spy to open flat 6-283403 communique (corresponding United States Patent (USP) 5,448, disclosed formation such as 332), as long as, just quote the part of the content of the disclosure as the record of this paper by being allowed by the law of the country of application appointment of this world or selection.Moreover, as focus detection system 245, can also use in the outside that liquid soaks regional AR2 and not detect the light beam of usefulness to the projection of substrate P surface, and receive its catoptrical formation via liquid LQ.
Control device CONT, in the time of scan exposure etc., according to focal shift signal (focus-out signal) from light receiver 245B, the crooked signal of S for example, so that the mode of focal shift vanishing, via the substrate objective table drive unit PSTD that comprises Z described later position drive division 256A～256C (with reference to Figure 21 etc.), the moving and the inclination (rotation of θ X, θ Y direction) of two dimension to Z-direction of control Z inclination objective table 252.That is, control device CONT, by with the moving of multiple spot focus detection system 245 control Z inclination objective tables 252, automatic focus and leveling automatically that the surface of the imaging surface of projection optical system PL and substrate P is substantially matched.
In addition, near the front end of projection optical system PL, be provided with detect the alignment mark on the substrate P or be formed on the reference mark that is located on the reference component that the figure on the substrate objective table PST do not show, from the base plate alignment system 246 of axle mode.In addition, near mask objective table MST, be provided with via mask M and projection optical system PL and detect the mask registration system 247 that is located at the reference mark on the described reference component.In this example,, can use the alignment sensor of Flame Image Process mode, so-called FIA (Field ImageAlignment) system as this alignment system.Moreover, formation as base plate alignment system 246, for example can use the spy to open flat 4-65603 communique (corresponding United States Patent (USP) 5,493,403) disclosed formation as the formation of mask registration system 247, can use the spy to open flat 7-176468 communique (the corresponding U.S. 5,646,313) disclosed formation.
Figure 21 is an enlarged drawing of showing liquid feed mechanism 210, liquids recovery mechanism 220 and projection optical system PL.Projection optical system PL, the optical element 260 that possesses multi-disc (is 10 at this) optical element 264a～264j of keeping by lens barrel PK and keep by the lens kit 262 of the image planes side (substrate P side) of projection optical system PL.Constitute among optical element 264a～264j of projection optical system PL, its part, for example optical element 264a, 264b are respectively can constitute along optical axis AX direction and with respect to the mode of the small driving of vergence direction of XY face by a plurality of driving elements (for example piezoelectric element etc.) 263.In addition, between optical element 264d, 264e, and between optical element 264f, the 264g, be formed with the 1st, the 2nd closed chamber 265A, the 265B that are made as sealing state respectively.Via pressure adjustmenting mechanism 266, provide clean gas, for example dry air from the gas supply mechanism that do not show of figure to these the 1st, the 2nd closed chamber 265A, 265B.
In this example, adjustment is applied to the driving voltage (drive amount of driving element) on each driving element 263, and the pressure adjustmenting mechanism 266 of the pressure (internal pressure) of the 1st, the 2nd closed chamber 265A, 265B gas inside, by imaging characteristic control device 267 according to controlling from the instruction of control device CONT, thus, just can revise the imaging characteristic of projection optical system PL, for example, curvature of the image, distortion, multiplying power etc.Moreover, adjusting the imaging characteristic adjusting mechanism of this imaging characteristic, can only constitute with the such movable optical element of optical element 264a, the number of this movable optical element also can be arbitrarily.But, at this moment also corresponding except focusing on because the number of movable optical element with the amendable kind of the imaging characteristic of projection optical system PL, therefore as long as the number of the kind of the imaging characteristic of revising decision movable optical element as required.
Z inclination objective table 252 is supported on the XY objective table 253 with 3 by 3 Z position drive division 256A, 256B, 256C (still, the Z position drive division 256C of paper inboard figure does not show).These Z positions drive division 256A～256C, comprise tilt each strong point below the objective table 252 with Z, 3 drivers (for example voice coil motor etc.) 259A that drives independently along the optical axis direction (Z direction) of projection optical system PL, 259B, 259C (still, driver 259 figure of the paper inboard of Figure 21 do not show), with the Z position drive division 256A that detects by Z inclination objective table 252,256B, the scrambler 258A of the drive amount (from the displacement of reference position) of the Z-direction that 256C realizes, 258B, 258C (still, the scrambler 258C of the paper inboard of Figure 21 figure do not show) and constituting.At this,, for example can use the linear encoder of optical profile type or condenser type etc. as scrambler 258A～258C.In this example, by described driver 256A, 256B, 256C, formation with Z tilt objective table 252 along optical axis AX direction (Z-direction) and with respect to the vergence direction of the face (XY face) of light shaft positive cross, the i.e. drive unit that drives of θ X, θ Y direction.In addition, drive amount (leaving the addendum modification of reference point) by the Z-direction of each strong point scrambler 258A～258C instrumentation, that realize by the Z position drive division 256A of Z inclination objective table 252,256B, 256C, be exported to control device CONT, control device CONT, just according to the instrumentation result of this scrambler 258A～258C, obtain the position and the leveling amount (θ X rotation amount, θ Y rotation amount) of the Z-direction of Z inclination objective table 252.
Liquid feed mechanism 210, be when comprising exposure-processed regulation during in the mechanism of liquid LQ is provided between projection optical system PL and substrate P, possess the liquid supply unit 211 that to send liquid LQ and be connected on the liquid supply unit 211, and will be provided to supply nozzle 213 on the substrate P from the liquid LQ that this liquid supply unit 211 is sent via supply pipe 212.Supply nozzle 213 is near the surface configuration of substrate P.Liquid supply unit 211 possesses the container of accommodating liquid LQ and force (forcing) pump etc., provides liquid LQ via supply pipe 212 and supply nozzle 213 on substrate P.The liquid of liquid supply unit 211 is supplied with action by control device CONT control, control device CONT can controlling liquid supply unit 211, with respect to the liquid quantity delivered of each unit interval on the substrate P.Moreover, the container of liquid feed mechanism 210, force (forcing) pump etc., exposure device EX not necessarily must possess, and can replace their at least a portion with the equipment of the factory that exposure device EX is set etc.
Liquids recovery mechanism 220, be when comprising exposure-processed regulation during in reclaim the liquid LQ between projection optical system PL and the substrate P mechanism, possess close substrate P surface configuration recovery nozzle 223 and be connected the liquids recovery portion 221 that reclaims on the nozzle 223 via recovery tube 222.Liquids recovery portion 221 comprises the container etc. of vacuum system (suction device) that contains vacuum pump and the liquid LQ that accommodates recovery and constitutes that its action is controlled by control device CONT.Vacuum system by liquids recovery portion 221 drives, via reclaiming the liquid LQ that nozzle 223 reclaims on the substrate P.Moreover, as vacuum system, also vacuum pump can be set on exposure device, and use the vacuum system of the factory that exposure device EX is set.In addition, exposure device EX also not necessarily must possess the container of liquids recovery mechanism 220, can replace their at least a portion with the equipment of the factory that exposure device EX is set etc.
Moreover, be preferably in recovery tube 222 midway, specifically reclaim between nozzle 223 and the vacuum system, the gas-liquid separator that separates with gas from the liquid LQ that reclaims nozzle 223 suctions is set.When the liquid LQ that attracts to reclaim on the substrate P, in liquids recovery portion (vacuum system) 221, situation that gas (air) around liquid LQ and its is reclaimed simultaneously might take place, therefore by separating from reclaiming the liquids and gases that nozzle 223 reclaims, can prevent liquid LQ inflow vacuum system and make the vacuum system appearance of undesirable condition such as break down with gas-liquid separator.Be recovered to the liquid LQ in the liquids recovery portion 221, for example go out of use, turn back to liquid supply unit 211 grades after perhaps being cleaned and utilize again.
Moreover, liquid feed mechanism 210 and liquids recovery mechanism 220, PL supports separatedly with respect to projection optical system.Thus, the vibration that produces in liquid feed mechanism 210 and liquids recovery mechanism 220 can not pass to projection optical system PL.
Figure 22 is the planimetric map of position relation of showing the AR1 of view field of liquid feed mechanism 210 and liquids recovery mechanism 220 and projection optical system PL.The AR1 of view field of projection optical system PL is elongated rectangle (slit-shaped) along Y direction, to clip the mode of the AR1 of this view field along X-direction, dispose 3 supply nozzle 213A～213C in+X side, dispose 2 and reclaim nozzle 223A, 223B in-X side.And supply nozzle 213A～213C is connected on the liquid supply unit 211 via supply pipe 212, reclaims nozzle 223A, 223B and is connected in the liquids recovery portion 221 via recovery tube 222.In addition, with supply nozzle 213A～213C with reclaim nozzle 223A, 223B roughly on the position of Rotate 180 °, dispose supply nozzle 216A～216C and reclaim nozzle 226A, 226B.Supply nozzle 213A～213C and recovery nozzle 226A, 226B alternately arrange along Y direction, supply nozzle 216A～216C and recovery nozzle 223A, 223B alternately arrange along Y direction, supply nozzle 216A～216C is connected on the liquid supply unit 211 via supply pipe 215, reclaims nozzle 226A, 226B and is connected in the liquids recovery portion 221 via recovery tube 225.
Figure 23 is the summary pie graph of the employed aerial image measuring device 270 of instrumentation of showing the imaging characteristic (optical characteristics) of projection optical system PL.Aerial image measuring device 270 possesses via the slit plate 275 image planes side that is configured in projection optical system PL, that have slit portion 271, receives the optical receiver 290 of the light that has passed through projection optical system PL.Slit plate 275 is located on the Z inclination objective table 252 of image planes side of projection optical system PL.Optical receiver 290, in Z inclination objective table 252 inside, possesses the locational optical element 276 that is configured near slit plate 275, the mirror 277 of light path of the light of optical element 276 has been passed through in bending, passed through the optical element 278 of the light incident of mirror 277, what the light that will pass through optical element 278 was delivered to Z inclination objective table 252 outsides send optical lens 279, be located at Z inclination objective table 252 outsides, will be from the mirror 280 of the light path bending of the light that send optical lens 279, reception passed through mirror 280 light optical receiver lens 281 and passed through the optical sensor (light receiving element) 282 that the components of photo-electric conversion of the light of optical receiver lens 281 constitute by reception.
Slit plate 275, possess the plane and see rectangular glass plate parts 274, be located at the photomask 272 upper central portion, that constitute by chromium etc. of glass plate parts 274, be located at this photomask 272 around, be among glass plate parts 274 top on reflectance coating 273 on the part beyond the photomask 272, that constitute by aluminium etc. and the part that is formed on photomask 272, as the slit portion 271 of opening figure.On slit portion 271, expose glass plate parts 274 as transparent component, light can see through slit portion 271.
On Z inclination objective table 252, with substrate holder 251 position adjacent on be provided with protuberance 283, be provided with peristome 284 on the top of this protuberance 283.Slit plate 275 can load and unload with respect to the peristome 284 of protuberance 283, embeds from the top with the state that stops up this peristome 284.
As the formation material of glass plate parts 274, can use with respect to the good synthetic quartz of the permeability of ArF excimer laser or KrF excimer laser or fluorite etc.Moreover the refractive index with respect to the ArF excimer laser of synthetic quartz is 1.56, is about 1.51 with respect to the refractive index of KrF excimer laser.
Optical element 276 in Z inclination objective table 252 inside, is configured in the below of slit portion 271, keeps with holding member 285.Keep the holding member 285 of optical element 276, be installed on the internal face 283A of protuberance 283.Passed through to be configured in the light of the optical element 276 of Z inclination objective table 252 inside, on mirror 277 after crooked its light path, by optical element 278.Passed through the light of optical element 278, by be fixed on Z inclination objective table 252+the optical lens 279 that send on the X side sidewall passes out to the outside of Z inclination objective table 252.By the light that send optical lens 279 to pass out to Z inclination objective table 252 outsides, by mirror 280 direct light receiver lenss 281.Optical receiver lens 281 and the optical sensor 282 that is configured in the top of this optical receiver lens 281 keep the position relation of regulation also to be incorporated in the box 286.Box 286 is fixed near the upper end of the top pillar 288 that is located at objective table base 254 via installing component 287.
Moreover, mirror 277, optical element 278 and send optical lens 279 etc. can load and unload with respect to Z inclination objective table 252.In addition, support the pillar 288 of the box 286 of taking in optical receiver lens 281 and optical sensor 282, can load and unload with respect to objective table base 254.
On optical sensor 282, use can detect the components of photo-electric conversion (light receiving element) of faint light accurately, for example photomultiplier (PMT, photomultiplier) etc.Light-to-current inversion signal from optical sensor 282 flows to control device CONT via signal processing apparatus.
Figure 24 is the figure that shows the state of the imaging characteristic of using aerial image measuring device 270 instrumentation projection optical system PL.As shown in figure 24, in the instrumentation of the imaging characteristic of projection optical system PL, make under the relative state of projection optical system PL and slit plate 275, with liquid feed mechanism 210 and liquids recovery mechanism 220, liquid LQ is flowed between the optical element 260 of the front (image planes side) of projection optical system PL and slit plate 275.Then, filling up under the state of liquid LQ between the optical element 260 of projection optical system PL and slit plate 275, the light (exposure light EL) that will pass through projection optical system PL and liquid LQ is radiated on the slit plate 275 that constitutes aerial image measuring device 270.In addition, the face positional information of the top 275A of slit plate 275 at this moment can detect with focus detection system 245.
Figure 25, be spacial flex as among the measuring device 270, be configured near the major part amplification profile the slit plate 275 of protuberance 283 inside and the optical element 276, Figure 26 is a planimetric map of seeing slit plate 275 from the top.Moreover, in Figure 25, optical receiver 290 illustrates simply, constitute among a plurality of optical elements and parts of optical receiver 290, only illustrate on the light path of light, be configured in locational optical element 276 near slit plate 275, and the optical sensor 282 that receives the light that has passed through this optical element 276.In aerial image measuring device 270 shown in Figure 25, between slit plate 275 and optical receiver 290, filled up liquid LQ.In this example, liquid LQ, fill up slit plate 275 in the peristome 284 that is entrenched in protuberance 283 below, and optical receiver 290, be configured among a plurality of optical elements (optics) on the light path, be configured between the locational optical element 276 near slit portion 275.Optical element 276 on the lower position of slit portion 275, is kept by the holding member on the internal face 283A that is installed in protuberance 283 285, and liquid LQ fills up the space S P that is surrounded by slit plate 275, holding member 285 and optical element 276.In this example, optical element 276 is made of plano-convex lens, so that the mode of its tabular surface towards the top disposed.And top (tabular surface) 276A of the inner bottom surface 285A of holding member 285 and optical element 276 roughly is a plane.In addition, holding member 285 forms section and sees it roughly is コ word shape upwards, the lateral surface 285B of this holding member 285 and the internal face 283A of protuberance 283 are close together, and are provided with seal members 291 such as sealing ring between the upper surface of holding member 285 (and composition surface of slit plate 275) 285C and slit plate 275.Thus, can prevent that the liquid LQ that fills up space S P from leaking into outside undesirable condition.
The holding member 285 that keeps slit plate 275 and optical element 276 can load and unload with respect to the internal face 283A of protuberance 283.When holding member 285 is installed, to keep the holding member 285 of optical element 276 to insert protuberance 283 inside (at this moment slit plate 275 is not installed) from the peristome 284 of protuberance 283, the internal face 283A with holding member 285 and protuberance 283 fixes with the fixed part of scheming not show.Then, slit plate 275 is embedded in the peristome 284.On the other hand, when taking off holding member 285,, extract holding member 285 via peristome 284 and get final product as long as after taking off slit plate 275 from peristome 284.
In addition, exposure device EX possesses the liquid withdrawal system 304 that the fluid Supplying apparatus 300 of liquid LQ is provided in the space S P between the optical element 276 of slit plate 275 and optical receiver 290 and reclaims the liquid LQ of this space S P.Protuberance 283 and holding member 285+be formed with the supply stream 302 that is connected on the space S P in the wall portion of X side, in the wall portion of-X side, be formed with the recovery stream 306 that is connected on the space S P.In addition, be connected with an end of supply pipe 301 on fluid Supplying apparatus 300, the other end of supply pipe 301 is connected via joint 303 and supplies with on the stream 302.Be connected with an end of recovery tube 305 on liquid withdrawal system 304, the other end of recovery tube 305 is connected via joint 307 and reclaims on the stream 306.In addition, at supply pipe 301 and the recovery tube 305 valve 301A, the 305A that are provided with its stream of switching midway separately.The action of fluid Supplying apparatus 300, liquid withdrawal system 304 and valve 301A, 305A is controlled by control device CONT, control device CONT, carry out supply and recovery by controlling them, fill up space S P with liquid LQ for the liquid LQ of space S P.
As shown in figure 26, slit plate 275, possess and be located at the photomask 272 upper central portion, that constitute by chromium etc. that the plane is seen as rectangular glass plate parts 274, be located at this photomask 272 around, be among glass plate parts 274 top on reflectance coating 273 on the part beyond the photomask 272, that constitute by aluminium etc. and the part that is formed on photomask 272, as the slit portion 271 of opening figure.On slit portion 271.Expose the glass plate parts 274 as transparent component, light can see through slit portion 271.Slit portion 271 be with Y direction as the slit of rectangle (rectangle) longitudinally, have Rack 2D.
Secondly, the step with the imaging characteristic of described aerial image measuring device 270 instrumentation projection optical system PL is described.
When instrumentation aerial image (projection image), control device CONT, moving substrate objective table PST, thus make projection optical system PL and slit plate 275 relative (promptly becoming state shown in Figure 24).Then, between the optical element 260 of the leading section of projection optical system PL and slit plate 275, fill up liquid LQ with liquid feed mechanism 210 and liquids recovery mechanism 220.(perhaps before this or afterwards) therewith synchronously, control device CONT as shown in figure 25, with fluid Supplying apparatus 300 and liquid withdrawal system 304, fills up liquid LQ between the optical element 276 of optical receiver 290 and slit plate 275.At this, in the following description, to soak the zone by the liquid that the LQ that has filled up between projection optical system PL and the slit plate 275 forms, suitably be called " the 1st liquid soaks area L A1 ", to soak the zone by the liquid that the liquid that has filled up between slit plate 275 and the optical receiver 290 (optical element 276) forms, suitably be called " the 2nd liquid soaks area L A2 ".
When the instrumentation of aerial image, the mask M that will possess instrumentation mark described later is supported on the mask objective table MST.Control device CONT shines mask M by illuminating optical system IL with exposure light EL.Passed through the light (exposure light EL) that described instrumentation mark, projection optical system PL and the 1st liquid soak the liquid LQ of area L A1, be radiated on the slit plate 275.Passed through the light of the slit portion 271 of this slit plate 275, the liquid LQ that soaks area L A2 via the 2nd liquid incides on the optical element 276.
Because the numerical aperture NA of projection optical system improves because of the liquid LQ that the 1st liquid between projection optical system PL and the slit plate 275 soaks area L A1, therefore if not according to the numerical aperture NA of projection optical system PL, also improve the numerical aperture NA of the optical element 276 of optical receiver 290, optical element 276, (all) incomes have been passed through the light of projection optical system PL well, thereby can not receive light well.So, as this example, improving under the situation of numerical aperture NA of projection optical system PL by filling up liquid LQ between projection optical system PL and the slit plate 275, thereby by also fill up the numerical aperture NA that liquid LQ improves the optical element 276 of optical receiver 290 between the optical element 276 of slit plate 275 and optical receiver 290, the optical element 276 of optical receiver 290 can be taken in the light that has passed through projection optical system PL well.
Optical element 276 will pass through the light optically focused that the 2nd liquid soaks area L A2.By the light of optical element 276 optically focused, via mirror 277, optical element 278 and the outside (Figure 23) of sending optical lens 279 to export to substrate objective table PST.Then, export to the light of the outside of this substrate objective table PST, by mirror 280 with the light path bending, and received by optical sensor 282 via optical receiver lens 281, will export to control device CONT via signal processing apparatus with the corresponding light-to-current inversion signal of this quantities received (light amount signal) from this optical sensor 282.
As described later, in this example,, therefore at this moment send optical lens 279 just to move with respect to optical receiver lens 281 and optical sensor 282 because the instrumentation of projection image's (aerial image) of instrumentation mark carries out with the slit scan mode.So, in aerial image measuring device 270, all incide mode on the optical receiver lens 281 to have passed through the light that send optical lens 279 that moves within the limits prescribed, set the size of each lens and mirror 280.
In aerial image measuring device 270, because optical sensor 282 is located on the assigned position of outside of substrate objective table PST, therefore can suppress influence that heating by optical sensor 282 causes, that the instrumentation precision of laser interferometer 244 etc. is caused within the bounds of possibility.In addition, because photoconduction of no use etc. links together outside and the inside of substrate objective table PST, so the driving precision of substrate objective table PST, can not resemble with photoconduction and with the outside of substrate objective table PST and inner situation about linking together, be affected.Certainly, under the situation of the influence etc. that can ignore or get rid of heat, also optical sensor 282 can be located at the inside of substrate objective table PST.That is, constitute among a plurality of optical elements and light receiving element of optical receiver 290, its part can be located on the substrate objective table PST, also can will all be located on the substrate objective table PST.
In this example, " the 1st liquid soaks area L A1 " and " the 2nd liquid soaks area L A2 " employed liquid LQ can use with a kind of liquid, perhaps also can use variety classes, particularly for the exposure light the different liquid of refractive index.Particularly, " the 1st liquid soaks area L A1 " employed liquid, preferably considering to be located at the NA or the refractive index of optical element of the front end of projection optical system selects, on the other hand, " the 2nd liquid soaks area L A2 " employed liquid, can consider glass plate parts 274 refractive index, with and/or the size and the refractive index of optical element 276 select.
Moreover, in this example, to will between slit plate 275 and optical receiver 290 (optical element 276), having filled up the aerial image measuring device 270 of liquid LQ, the example that is applicable to liquid immersion exposure apparatus is illustrated, but, also can be suitable for aerial image measuring device 270 of the present invention (optical receiver 290) for liquid LQ not being filled up the dried exposure device (common exposure device) that exposes between projection optical system PL and the substrate P.When instrumentation aerial image in dried exposure device, make under the relative state of projection optical system PL and slit plate 275, between projection optical system PL and slit plate 275, do not fill up liquid LQ, but to (do not forming the 1st liquid soak area L A1 and only form under the state that the 2nd liquid soaks area L A2) under the state that has filled up liquid LQ between the optical element 276 of slit plate 275 and optical receiver 290, the exposure light EL that will pass through projection optical system PL is radiated on the slit plate 275.Because the optical element 276 of optical receiver 290 has improved numerical aperture NA because of the liquid LQ that has filled up between slit plate 275 and the optical element 276, therefore possessing numerical aperture NA in the dried exposure device of the projection optical system of big (for example NA＞0.9), also can receive light well.In addition, for example make the optical element 276 of optical receiver 290 be close to slit plate 275, also can receive the light that has passed through projection optical system PL well, and can access can be with the effect of optical receiver 290 integral miniaturization.
Moreover, in this example, though by carrying out supply and the recovery of liquid LQ with fluid Supplying apparatus 300 and liquid withdrawal system 304, filled up liquid LQ in the space S P between slit plate 275 and optical element 276, but also can not use fluid Supplying apparatus 300 and liquid withdrawal system 304, but for example when the manufacturing of exposure device EX, in space S P, fill up liquid LQ in advance.At this moment, for example can take off slit plate 275, and the liquid LQ of periodic replacement space S P, also can be used as liquid LQ and use the liquid that not needing of having good keeping qualities change from protuberance 283 (Z inclination objective table 252).On the other hand, by carrying out supply and the recovery of liquid LQ, can in space S P, fill up fresh (cleaning) liquid LQ with fluid Supplying apparatus 300 and liquid withdrawal system 304 always.Moreover, in the instrumentation of aerial image measuring device 270, also can stop liquid feedway 300 and the liquid of liquid withdrawal system 304 supply with action and liquids recovery action.In addition, for example at the holding member 285 that will keep slit plate 275 and optical element 276 from protuberance 283 (Z inclination objective table 252) when taking off, by after having reclaimed the liquid LQ of space S P with liquid withdrawal system 304, take off the holding member 285 that keeps slit plate 275 and optical element 276, leakage liquid LQ ground does not carry out charge and discharge operations.
Moreover, can also between slit plate 275 and optical receiver 290 (optical element 276), not fill up liquid LQ, but between slit plate 275 and optical receiver 290 (optical element 276), configuration has the photopermeability parts (optics, glass component) with the roughly the same refractive index of liquid LQ.As such photopermeability parts, for example can enumerate quartz and fluorite.Liquid LQ in known example is a pure water, and roughly is 1.44 with respect to the refractive index of the pure water of ArF excimer laser.On the other hand, the refractive index of known quartz with respect to the ArF excimer laser roughly is 1.56.Thereby the 2nd liquid that replaces being formed by liquid (pure water) LQ soaks area L A2, also can dispose the light transmission parts that are made of quartz between slit plate 275 and optical element 276.
Below, wait the example of explanation usage space with reference to Figure 24 as the aerial image instrumentation action of measuring device 270.As previously mentioned, Figure 24 is the figure that shows the state of instrumentation aerial image.When the aerial image instrumentation, as mask M, usage space is as the mask of instrumentation special use, perhaps formed mask of special-purpose instrumentation mark etc. in the employed device manufacturing of the manufacturing of device on mask.In addition, replace these masks, the fixing marking plate (reference mark plate) that is made of the glass material with the identical material of mask can also be set on mask objective table MST, and use the plate that on this marking plate, has formed the instrumentation mark.
On mask M, on the position of regulation, be formed with instrumentation mark PMx (Figure 24) close to each other, with instrumentation mark PMy (Figure 24), wherein instrumentation with mark PMx be ratio (dutycycle) by the width of width that has periodic line portion along X-direction and spatial portion be 1: 1 line and space (line and space) (L/S) mark constitute, instrumentation mark PMy is to be that 1: 1 L/S mark constitutes by have periodic dutycycle along Y direction.These instrumentation marks PMx, PMy are made of the line graph of identical live width.In addition, on the slit plate 275 that constitutes aerial image measuring device 270, shown in Figure 27 (a), be formed with the slit portion 271x of the Rack 2D that extends along Y direction and the slit portion 271y of the Rack 2D that extends along X-direction with the position of the regulation shown in Figure 27 (a) relation.Like this, on slit plate 275,, in Figure 20～Figure 26 etc., represent these slit portions to illustrate as slit portion 271 though be formed with a plurality of slit portion 271x, 271y etc. in fact.
For example, when the instrumentation of the aerial image of instrumentation mark PMx, by control device CONT, drive movable mask screen 207B shown in Figure 20 via the screen drive unit that do not show of figure, the irradiation area of exposure light EL is limited in the regulation zone that comprises instrumentation mark PMx part.Under this state, begin the luminous of light source 201 by control device CONT, when the light EL that will expose shines on the instrumentation mark PMx, light (exposure light EL) because of instrumentation mark PMx diffraction, scattering, be projected optical system PL refraction, and on the image planes of projection optical system PL, form the aerial image (projection image) of instrumentation mark PMx.At this moment, substrate objective table PST, shown in Figure 27 (a), be provided in a side of aerial image PMx ' with instrumentation mark PMx be formed on slit plate 275 slit portion 271x+X side (or-X side) locational.
Then, under the indication of control device CONT, when by substrate objective table drive unit PSTD, with substrate objective table PST with shown in the arrow Fx among Figure 27 (a) like that to+when directions X drove, slit portion 271x scanned along X-direction with respect to aerial image PMx '.In this scanning, light (exposure light EL) by slit portion 271x, received by optical sensor 282 via the mirror 280 of the light-receiving optical system in the substrate objective table PST (Z inclination objective table 252), substrate objective table PST outside and optical receiver lens 281, and its light-to-current inversion signal is offered signal processing apparatus.In signal processing apparatus, on its light-to-current inversion signal, implement predetermined process, will offer control device CONT with the corresponding light intensity signal of aerial image PMx ' then.Moreover, at this moment, in signal processing apparatus, for the influence that suppresses to cause, will utilize the signal of integrator sensor 233 shown in Figure 20 to offer control device CONT from the signal that the signal of optical sensor 282 has been standardized by deviation from the luminous intensity of the exposure light EL of light source 201.In Figure 27 (b), an example of the light-to-current inversion signal (light intensity signal) that has obtained when having showed described aerial image instrumentation.
When the aerial image of instrumentation instrumentation mark PMy, with substrate objective table PST be located at slit portion 271y on the slit plate 275+position of the aerial image of the formation instrumentation mark PMy of Y side (or-Y side) on, by carrying out instrumentation, can obtain and the corresponding light-to-current inversion signal of the aerial image of instrumentation mark PMy (light intensity signal) then with slit scan mode as hereinbefore.Moreover the instrumentation mark is not limited to described mark, can be according to suitably decision such as the imaging characteristic of instrumentation object and instrumentation precision.
When being used to obtain the instrumentation of imaging characteristic adjustment information etc., as shown in figure 21, when adjusting at first in the early stage, one side drives the optical element 264a of projection optical system PL singly, 264b, one side changes the 1st singly in addition, the 2nd closed chamber 265A, the pressure of 265B, one side as described later, measure the focusing of projection optical system PL with aerial image measuring device 270 (Figure 20), and the imaging characteristic of other regulation (curvature of the image for example, multiplying power, distortion, coma aberration, and obtain in many aberrations such as spherical aberration at least one), with respect to optical element 264a, the drive amount of 264b, the and the 1st, the 2nd closed chamber 265A, the imaging characteristic variable quantity that the pressure of 265B changes.
Below, as an example of the instrumentation of imaging characteristic action, the detection method of the best focus position of projection optical system PL is described.At this moment,, select the common diaphragm of irradiation system aperture stop plate 204,, be set at common illuminate condition as illuminate condition as precondition.When the detection of best focus position, for example, use the mask M formed the instrumentation mark PMx (or PMy) that the L/S figure by live width 1 μ m, dutycycle 50% constitutes.At first, the loading attachment that is not shown by figure is loaded in mask M on the mask objective table MST.Secondly, control device CONT moves mask objective table MST via mask objective table drive unit MSTD, makes on the optical axis of instrumentation mark PMx and projection optical system PL on the mask M roughly consistent.Then, control device CONT drive controlling movable mask screen 207B comes the regulation irradiation area, and exposure light EL only is radiated on the instrumentation mark PMx part.Under this state, control device CONT, the light EL that will expose is radiated on the mask M, then with similarly aforementioned, one side is along X-direction scanning substrate objective table PST, and one side is carried out the aerial image instrumentation of instrumentation mark PMx in the slit scan mode with aerial image measuring device 270.At this moment, control device CONT, the one side via substrate objective table drive unit PSTD with the regulation step pitch make slit plate 275 Z-direction the position (promptly, the position of Z inclination objective table 252) changes, one side repeatedly repeats the aerial image instrumentation of instrumentation mark PMx, and the light intensity signal (light-to-current inversion signal) of each time is stored in the memory storage MRY.Moreover the variation of the position of the Z-direction of described slit plate 275 is by carrying out according to scrambler 258A, the 258B of Z inclination objective table 252, the instrumentation value Control Driver 259A of 258C, the mode of 259B, 259C.Then, control device CONT will carry out Fourier transform respectively by a plurality of light intensity signals (light-to-current inversion signal) that described repetition obtains, and obtain the contrast of the amplitude ratio of conduct 1 secondary frequency components of each time and 0 secondary frequency components.Then, control device CONT detects the Z position (that is, the position of the Z-direction of slit plate 275) with the corresponding Z inclination of the light intensity signal objective table 252 of this contrast maximum, and this position is determined as the best focus position of projection optical system PL.Because contrast changes sensitively according to focal position (defocus amount), so can high precision and the best focus position of instrumentation (decision) projection optical system PL easily.Control device CONT according to the best focus position of trying to achieve, carries out the focus correction as the setting again (correction) of the detection initial point (detection reference) of focus detection system 245.Thus, after, can be by focus detection system 245 with the predetermined surface on the substrate objective table PST (for example, substrate P surface or slit plate 275 surfaces), be positioned at and the reference field of mask M optically on the position of conjugation.
Moreover, though existence is generally less more than or equal to the amplitude of the frequency component of the real number of 2 times high order, and can not fully obtain the situation of amplitude of the noise of noise with respect to electricity, optics, but when at S/N on than (signal/noise than) this point under the no problem situation, the variation of amplitude ratio of the frequency component by the observation high order also can be in the hope of best focus position.Moreover, being not limited to use the method for described contrast, the method for the Z position (focal position) of the differential value maximum by detecting light intensity signal also can be carried out the detection of best focus position.
In addition, at this, to when the instrumentation of the best focus position of carrying out projection optical system PL, slit portion 271 (slit plate 275) is illustrated along the prescribed direction method for scanning (slit scan mode) in the XY plane, but also can on the image planes of projection optical system PL, form the aerial image of instrumentation marks such as isolated line mark, and with slit plate 275 (Z inclination objective table 252) in the predetermined stroke scope that with the best focus position is the center along Z-direction scanning (scanning), make with respect to this aerial image to make slit portion 271 (slit plate 275) along optical axis AX direction (Z-direction) relative scanning.And, obtain best focus position according to light intensity signal (peak value) at this moment.At this moment, on image planes, the aerial image that preferably uses the instrumentation mark is and the roughly corresponding to size of shape of slit portion 271 (271x or 271y), the instrumentation mark of shape.If carry out such aerial image instrumentation, can obtain light intensity signal shown in Figure 26.At this moment, the position of the peak value of signal waveform that can be by directly finding this light intensity signal, with the Z position of this point as best focus position Z 0, perhaps also can be with the clipping lever line SL of regulation with the light intensity signal amplitude limit, with the Z position of the mid point of 2 intersection points of light intensity signal and clipping lever line SL as best focus position Z 0No matter which is, uses this method, if with slit plate 275 along the Z-direction run-down, just can detect best focus position, so can boost productivity.
Secondly, as an example of the instrumentation action of imaging characteristic, the detection method of the image planes shape (curvature of the image) of projection optical system PL is described.When the detection of this curvature of the image, as an example, use shown in Figure 29, in the PA of graphics field, formed the instrumentation mark PM with aforementioned instrumentation mark PMx same size same period 1～PM nMask M1.After mask M1 being loaded on the mask objective table MST, control device CONT moves mask objective table MST via mask objective table drive unit MSTD, makes the instrumentation mark PM of the central authorities that are positioned at mask M1 kWith roughly consistent on the optical axis of projection optical system PL.That is, carry out location to the reference point of mask M1.When the location of carrying out to this reference point, be made as instrumentation mark PM 1～PM nAll be positioned at the visual field of projection optical system PL.Secondly, control device CONT drive controlling movable mask screen 207B comes the regulation irradiation area, makes exposure light EL only be radiated at instrumentation mark PM 1On the part.Under this state, control device CONT, the light EL that will expose is radiated on the mask M1, then with similarly aforementioned, carries out instrumentation mark PM with aerial image measuring device 270 in the slit scan mode 1The aerial image instrumentation and the detection of the best focus position of projection optical system PL, and its result is stored in the memory storage MRY.When using instrumentation mark PM 1The detection of best focus position when finishing, control device CONT drive controlling movable mask screen 207B comes the regulation irradiation area, makes exposure light EL only be radiated at instrumentation mark PM 2On the part.Under this state,, carry out instrumentation mark PM with the slit scan mode with similarly aforementioned 2The aerial image instrumentation and the detection of the best focus position of projection optical system PL, and its result is stored in the memory storage MRY.Afterwards, control device CONT, with similarly aforementioned, one side changes irradiation area, and one in the face of instrumentation mark PM 3～PM nRepeat the detection of the best focus position of aerial image instrumentation and projection optical system PL.Then, control device CONT is by according to each best focus position Z of obtaining thus 1, Z 2..., Z nThe curvature of the image of projection optical system PL is calculated in the statistical treatment of stipulating.
In addition, when detecting the spherical aberration of projection optical system PL, use mask M2 shown in Figure 30.The substantial middle of the Y direction in the graphics field PA of mask M2 shown in Figure 30 separates predetermined distance along X-direction and is formed with 2 instrumentation mark PM1, PM2.Instrumentation mark PM1 is the L/S figure with aforementioned instrumentation mark PMx same size same period.In addition, instrumentation mark PM2 is the L/S figure of arranging along X-direction with the different cycle (for example, about 1.5～2 times of the cycle of instrumentation mark PM1 (marker spacing)) with the figure of instrumentation mark PMx same size.After mask M2 being loaded on the mask objective table MST, control device CONT moves mask objective table MST via mask objective table drive unit MSTD, makes on the optical axis of instrumentation mark PM1 and projection optical system PL on the mask M2 roughly consistent.Secondly, control device CONT drive controlling movable mask screen 207B comes the regulation irradiation area, and exposure light EL only is radiated on the instrumentation mark PM1 part.Under this state, control device CONT, the light EL that will expose is radiated on the mask M2, then with similarly aforementioned, carry out the detection of the best focus position of the aerial image instrumentation of instrumentation mark PM1 and projection optical system PL with aerial image measuring device 270 in the slit scan mode, and its result is stored in the memory storage MRY.When the detection of the best focus position of using instrumentation mark PM1 finished, control device CONT moved mask objective table MST predetermined distance, exposure light EL is radiated on the instrumentation mark PM2 to-directions X via mask objective table drive unit MSTD.Under this state, with similarly aforementioned, carry out the detection of the best focus position of the aerial image of instrumentation mark PM2 and projection optical system PL, and its result is stored in the memory storage MRY with the slit scan mode.Control device CONT is according to each the best focus position Z that obtains thus 1And Z 2Poor, by computing, calculate the spherical aberration of projection optical system PL.
In addition, when multiplying power that detects projection optical system PL and distortion, use mask M3 shown in Figure 31.On the part of the central part of the graphics field PA of mask M3 shown in Figure 31 and 4 jiaos, be formed with the instrumentation mark BM that adds up to 5 for example to constitute by the square mark of 120 μ m angles (with projection multiplying power 1/4 30 μ m angles on slit plate 275) 1～BM 5After mask M3 being loaded on the mask objective table MST, control device CONT moves mask objective table MST via mask objective table drive unit MSTD, makes the instrumentation mark BM of the central authorities that are present on the mask M3 1The optical axis of center and projection optical system PL on roughly consistent.That is, carry out location to the reference point of mask M3.Carrying out under the state of the location of this reference point instrumentation mark BM 1～BM 5All be positioned at the visual field of projection optical system PL.Secondly, control device CONT drive controlling movable mask screen 207B comes the regulation irradiation area, exposure light EL only is radiated at comprises instrumentation mark BM 1, than instrumentation mark BM 1On the rectangular area part of a big circle.Under this state, control device CONT, the light EL that will expose is radiated on the mask M3.Thus, form instrumentation mark BM 1Aerial image, i.e. the foursquare marker image at 30 μ m angles roughly.Under this state, control device CONT, one side scans substrate objective table PST via substrate objective table drive unit PSTD along X-direction, and one side is carried out instrumentation mark BM with aerial image measuring device 270 1The aerial image instrumentation, and will be stored in by the light intensity signal that this instrumentation obtains in the memory storage MRY.Secondly, control device CONT according to the light intensity signal that obtains, by for example method of well-known phase detection method or rim detection, obtains instrumentation mark BM 1Image space.At this, as phase detection method, can use general method, for example, obtain 1 secondary frequency components (this regards sinusoidal wave as) of light intensity signal being carried out Fourier transform and obtaining, with with long-pending for example 1 periodic quantity of identical with its frequency sine wave as benchmark and, obtain described 1 secondary frequency components simultaneously, with long-pending for example 1 periodic quantity of identical with its cycle cosine wave (CW) as benchmark and.Then,, obtain phase differential, obtain instrumentation mark BM according to this phase differential with respect to the reference signal of 1 secondary frequency components by obtaining the inverse sine (arc tangent) that to obtain and be divided by the merchant that obtains each other 1X position X 1In addition, as the method for rim detection, can use to have adopted and calculate method with the rim detection of the margining amplitude technique of the position at the edge of the corresponding aerial image of each light-to-current inversion signal respectively according to the intersection point of the clipping lever of light intensity signal and regulation.Secondly, control device CONT, one side scans substrate objective table PST along Y direction, and one side is carried out instrumentation mark BM with aerial image measuring device 270 1The aerial image instrumentation, and will be stored in by the light intensity signal that this instrumentation obtains in the memory storage MRY.Then, with methods such as phase-detection as hereinbefore, obtain instrumentation mark BM 1Y position y 1Then, control device CONT is according to the instrumentation mark BM that obtains 1Coordinate position (x 1, y 1), the offset of mask correction M3 with respect to optical axis center.When the correction of the offset of described mask M3 finished, control device CONT drive controlling movable mask screen 207B came the regulation irradiation area, exposure light EL only is radiated at comprises instrumentation mark BM 2, than instrumentation mark BM 2On the rectangular area part of a big circle.Under this state,, carry out instrumentation mark BM with the slit scan mode with similarly aforementioned 2The aerial image instrumentation and the instrumentation of XY position, and its result is stored in the memory storage MRY.Afterwards, control device CONT, one side changes irradiation area, and one in the face of instrumentation mark BM 3～BM 5Repeat the instrumentation of aerial image and the instrumentation of XY position.By according to the instrumentation mark BM that obtains thus 2～BM 5Coordinate figure (x 2, y 2), (x 3, y 3), (x 4, y 4), (x 5, y 5) computing of stipulating, control device CONT calculates the multiplying power of projection optical system PL and at least one side of distortion.
More than, as an example, the step with best focus position, curvature of the image, spherical aberration, multiplying power and the distortion of aerial image measuring device 270 instrumentation projection optical system PL has been described.Moreover, using the instrumentation mark of regulation, aerial image measuring device 270 can also carry out instrumentation to other imaging characteristic such as for example coma aberration.
Like this, when using the imaging characteristic of slit scan mode instrumentation projection optical system PL, one side is with respect to the light that has passed through projection optical system PL (exposure light EL) travelling slit plate 275 (slit portion 271) relatively, one side via liquid LQ to optical receiver 290 (optical element 276) irradiates light.
Control device CONT, imaging characteristic information according to the projection optical system PL of described instrumentation, obtain the correction that is used to obtain required imaging characteristic, specifically, obtain the adjustment amount of internal pressure of drive amount and the 1st, the 2nd closed chamber 265A, the 265B of optical element 264a, the 264b of projection optical system PL.At this, in memory storage MRY, for example store by experiment or the relation (being imaging characteristic adjustment information) of the variable quantity (variation) of the various imaging characteristics of the adjustment amount of the internal pressure of the drive amount and the 1st of optical element 264a that try to achieve in advance, projection optical system PL, 264b such as simulation, the 2nd closed chamber 265A, 265B and projection optical system PL.Control device CONT, with reference to the described relation that is stored in the memory storage MRY, obtain the correction of adjustment amount of internal pressure that is used for the imaging characteristic of projection optical system PL is adapted to drive amount and the 1st, the 2nd closed chamber 265A, the 265B of optical element 264a, 264b required state, that comprise projection optical system PL.Moreover, the detailed content of aerial image instrumentation, for example open in the 2002-14005 communique (corresponding U.S. Patent Publication 2002/0041377) and be disclosed,, just quote the part of these disclosed contents as the record of this paper as long as specified by this world application or being allowed by the law of the country of selection the spy.
Below, to the device manufacturing being described with the step of graph exposure on substrate P with exposure device EX.
As shown in figure 20, instrumentation at the imaging characteristic that has passed through projection optical system PL and liquid LQ that has carried out being undertaken by aerial image measuring device 270, and be used to revise after the derivation of correction of described imaging characteristic, control device CONT is via substrate objective table drive unit PSTD driving substrate objective table PST, so that projection optical system PL is relative with the substrate P on being loaded in substrate objective table PST.Moreover, at this moment, be loaded on the mask objective table MST having formed the mask M of device manufacturing with figure.Then, control device CONT drives the liquid supply unit 211 of liquid feed mechanism 210, and the liquid LQ of ormal weight is provided on substrate P in each unit interval via supply pipe 212 and supply nozzle 213.In addition, control device CONT, along with providing of the liquid LQ that is undertaken by liquid feed mechanism 210, drive the liquids recovery portion (vacuum system) 221 of liquid withdrawal system 220, via reclaiming nozzle 223 and recovery tube 222 reclaim ormal weight in each unit interval liquid LQ.Thus, the liquid that forms liquid LQ between the optical element 260 of the leading section of projection optical system PL and substrate P soaks regional AR2.
Then, control device CONT, is projected in the picture of the figure of mask M on the substrate P via projection optical system PL and liquid LQ with exposure light EL irradiation mask M by illuminating optical system IL.At this, when the exposure-processed of carrying out for substrate P, control device CONT, according to described correction of trying to achieve, drive optical element 264a, the 264b of projection optical system PL, or adjust the internal pressure of the 1st, the 2nd closed chamber 265A, 265B, and one side adjustment has been passed through the imaging characteristic of projection optical system PL and liquid LQ, and one side is carried out exposure-processed (Figure 21).
When scan exposure, the figure of the part of mask M is looked like to be projected on the AR1 of view field, with respect to projection optical system PL, mask M moves with speed V to-directions X (or+directions X), synchronous therewith, substrate P moves with speed β V (β is the projection multiplying power) to+directions X (or-directions X) via substrate objective table PST.Then, behind the end exposure to 1 shooting area, by the stepping of substrate P, next shooting area moves to the scanning starting position, below, carry out exposure-processed in turn with scan mode step by step for each shooting area.In this example,, liquid LQ sets to the mode that the direction identical with the moving direction of substrate P flows so that being parallel to the moving direction ground of substrate P.Promptly, make substrate P to moving with the direction of scanning (directions X) of arrow Xa (with reference to Figure 22) expression and carrying out under the situation of scan exposure, use supply pipe 212, supply nozzle 213A～213C, recovery tube 222 and reclaim nozzle 223A, 223B, carry out supply and recovery by the liquid LQ of liquid feed mechanism 210 and 220 realizations of liquids recovery mechanism.Promptly, when substrate P to-when directions X moves, (213A～213C) provides liquid LQ between projection optical system PL and substrate P by supply nozzle 213, simultaneously reclaim liquid LQ on the substrate P, and liquid LQ is flowed to-directions X with the optical element 260 of the leading section that fills up projection optical system PL and the mode between the substrate P by reclaiming nozzle 223 (223A, 223B).On the other hand, make substrate P to moving with the direction of scanning (+directions X) of arrow Xb (with reference to Figure 22) expression and carrying out under the situation of scan exposure, use supply pipe 215, supply nozzle 216A～216C, recovery tube 225 and reclaim nozzle 226A, 226B, carry out supply and recovery by the liquid LQ of liquid feed mechanism 210 and 220 realizations of liquids recovery mechanism.Promptly, when substrate P to+when directions X moves, (216A～216C) provides liquid LQ between projection optical system PL and substrate P by supply nozzle 216, simultaneously reclaim liquid LQ on the substrate P, and liquid LQ is flowed to+directions X with the optical element 260 of the leading section that fills up projection optical system PL and the mode between the substrate P by reclaiming nozzle 226 (226A, 226B).At this moment, the liquid LQ that provides via supply nozzle 213 for example, moving along with substrate P to-directions X, flow in the mode that is introduced between optical element 260 and the substrate P, even if therefore the energize of liquid feed mechanism 210 (liquid supply unit 211) is less, also can between optical element 260 and substrate P, provide liquid LQ at an easy rate.And, by switch the direction of working fluid LQ according to the direction of scanning, no matter to+directions X or-situation of which scanning direction substrate P of directions X under, can fill up between optical element 260 and the substrate P with liquid LQ, can obtain the higher exploring degree and the depth of focus of broad.
Moreover, in described example, in the instrumentation action of being undertaken by aerial image measuring device 270, carry out the liquid supply of liquid feed mechanism 210 and the liquids recovery of being undertaken by liquids recovery mechanism 220, thereby liquid LQ is flowed between the optical element 260 of projection optical system PL and slit plate 275, but cause under the less situation of the deterioration of the temperature variation of liquid LQ and liquid LQ in irradiation because of light, also can before instrumentation, provide liquid LQ with liquid feed mechanism 210, in the instrumentation action, the liquids recovery that stops that all liquid that undertaken by liquid feed mechanism 210 are supplied with and undertaken by liquids recovery mechanism 220, after the instrumentation release, carry out the recovery of the liquid LQ that undertaken by liquids recovery mechanism 220.
(the 12nd example)
Below, the 12nd example of the present invention is described.In the following description, the component parts identical or equal with aforementioned the 11st example is marked with identical label, and simple or omit its explanation.
Figure 32 is the figure of spacial flex as other example of measuring device 270.In Figure 32, among the optical receiver 290 of aerial image measuring device 270, optical sensor 282 is configured on the position near slit plate 275, fills up liquid LQ in the space S P between this optical sensor 282 and slit plate 275.Optical sensor 282 is kept by holding member 285.The light receiving surface 282A of optical sensor 282 becomes a plane with the inner bottom surface 285A of holding member 285.By such formation, optical sensor 282 also can receive well and pass through projection optical system PL, the 1st liquid and soak the light that area L A1, slit plate 275 and the 2nd liquid soak area L A2.
(the 13rd example)
Other example of having showed aerial image measuring device 270 among Figure 33.As shown in figure 33, the light receiving surface 282A of optical sensor 282 was close on slit plate 275 following.That is, in example shown in Figure 33, do not form the 2nd liquid and soak area L A2.Like this, by the optical sensor 282 of optical receiver 290 is disposed in the mode of joining with slit plate 275, thereby even if substantially improving under the situation of numerical aperture NA of projection optical system PL to filling up liquid LQ between projection optical system PL and the slit plate 275, optical receiver 290 (light receiving element 282) also can receive the light that has passed through projection optical system PL well.
Moreover under the situation of the formation that optical sensor 282 and slit plate 275 are joined, slit plate 275 (glass plate parts 274) is preferably with can not be because of the degree of weight deflection that the 1st liquid soaks the liquid LQ of the area L A1 attenuate of doing the best.And then, also can be the light receiving surface 282A that makes optical receiving sensor 282 is exposed to the top from glass plate parts 274 formation.On the other hand, slit plate 275 (glass plate parts 274) is set on the light receiving surface 282A of optical sensor 282 by light receiving surface 282A is exposed, it is big that flat site becomes, and therefore can form the 1st liquid well soaks area L A1.
Moreover, for optical sensor 282 is bonded on slit plate 275 below, can use bonding agent.At this moment, bonding agent preferably has high transmittance with respect to exposure light, and has the last such refractive index materials of light receiving surface 282A that the exposure light that has passed through slit portion (light transmissive portion) 271 can incide optical sensor 282.
In addition, in the example of Figure 33, though be to make optical sensor 282 be close to the following formation of slit plate 275, also light receiving element can be patterned at slit plate 275 (glass plate parts 274) below.
(the 14th example)
As previously mentioned, when using the imaging characteristic of slit scan mode instrumentation projection optical system PL, one side is with respect to the light that has passed through projection optical system PL (exposure light EL) travelling slit plate 275 (slit portion 271) relatively, one side via liquid LQ with rayed on optical receiver 290 (optical element 270).At this moment, because moving of slit plate 275, in the light-receiving action of being undertaken by optical receiver 290, the liquid LQ that might soak area L A1 via the 1st liquid between projection optical system PL and the slit plate 275 makes projection optical system PL (optical element 260 of leading section) vibration, perhaps slit plate 275 changes because of the power deflection of this liquid LQ, thus the undesirable condition that aerial image instrumentation precision is reduced.
So, in this example, as shown in figure 34, on the assigned position of slit plate 275, be provided with through hole 320.Like this, even if slit plate 275 moves with respect to projection optical system PL, but because the 1st liquid between projection optical system PL and the slit plate 275 soaks the liquid LQ of area L A1, can flow in the space S P via through hole 320, even if therefore slit plate 275 moves, can not produce the pressure that the 1st liquid between projection optical system PL and the slit plate 275 soaks the liquid LQ of area L A1 yet, and the 2nd liquid between slit plate 275 and the optical receiver 290 (optical element 276) soaks pressure poor of the liquid LQ of area L A2, thereby undesirable conditions such as slit plate 275 deflections can not take place.When slit plate 275 moves, though the liquid LQ that the 1st liquid soaks area L A1 also transversely (the face direction of slit plate 275) moves, thereby but also can move along above-below direction by through hole 320 is set, can further prevent the generation of undesirable conditions such as slit plate 275 deflections.In addition, because can soak area L A1 and the 2nd liquid at the 1st liquid via through hole 320 liquid LQ soaks between the area L A2 and moves, the 1st liquid that therefore also can not produce between projection optical system PL and the slit plate 275 soaks the bigger pressure variation of the liquid LQ of area L A1, so can prevent to make projection optical system PL change the generation of the undesirable condition of (vibration) because of the pressure variation of the mobile liquid LQ that follows this slit plate 275.
Figure 35 is the planimetric map of the slit plate 275 of Figure 34.As shown in figure 35, through hole 320 is provided with a plurality of, is 4 in this example.This a plurality of (4) through hole 320 is located at the slit portion 271 that clips slit plate 275 respectively and on the relative position.Through hole 320 is located at the inboard that the 1st liquid that fills up the liquid LQ between projection optical system PL and the slit plate 275 soaks area L A1.Thus, even if when slit plate 275 moves, the liquid LQ that the 1st liquid soaks area L A1 also can flow in the space S P via through hole 320.And, through hole 320, relative mode forms with the slit portion 271 that clips the substantial middle portion that is located at slit plate 275, and the center that is respectively formed at respect to slit plate 275 becomes on the point-symmetric position, therefore can keep the surface accuracy (flatness) of slit plate 275.
Moreover through hole 320 is not limited to 4, also number arbitrarily can be set, and can also be 1.In addition, as shown in figure 35, in this example,, can not uniformly-spaced also though through hole 320 is arranged to uniformly-spaced in the mode of surrounding slit portion 271.In addition, the distance of each of slit portion 271 (center) and a plurality of through holes 320 can be identical, also can be different.
; when being provided with on the slit plate 275 under the situation of through hole 320; when and when in space S P, filling up liquid LQ in order to form that the 2nd liquid soaks area L A2; wait the formation of the fluid Supplying apparatus 300 of explanation and liquid withdrawal system 304 except using with reference to Figure 25; can also use liquid feed mechanism 210; via through hole 320, provide liquid LQ in the space S P between slit plate 275 and optical receiver 290 (optical element 276) then.In addition, can also use liquids recovery mechanism 220,, reclaim the liquid LQ of the space S P between slit plate 275 and the optical receiver 290 (optical element 276) then via through hole 320.Promptly, also can use the liquid feed mechanism 210 that liquid LQ can be provided between projection optical system PL and substrate P when exposure-processed, and the liquids recovery mechanism 220 that can reclaim the liquid LQ between projection optical system PL and the substrate P, the 2nd liquid that forms between slit plate 275 and the optical receiver 290 (optical element 276) soaks area L A2.
When using liquid feed mechanism 210 formation the 2nd liquid to soak area L A2, shown in Figure 36 (a), liquid feed mechanism 210 provides liquid LQ from supply nozzle 213 via through hole 320 in space S P.In addition, the liquid LQ on the slit plate 275 (comprising the liquid LQ that overflows via through hole 320 from space S P) is recovered from the recovery nozzle 223 of liquids recovery mechanism 220.Like this, shown in Figure 36 (b), use liquid feed mechanism 210 and liquids recovery mechanism 220, can form respectively that the 1st liquid soaks area L A1 and the 2nd liquid soaks area L A2.
Receive the light that passed through projection optical system PL (exposure light EL) afterwards at optical receiver 290 via liquid LQ and slit plate 275, liquids recovery mechanism 220 reclaims the liquid LQ that the 1st liquid on the slit plates 275 soaks area L A1.Afterwards, in order to carry out exposure-processed, substrate objective table PST moves, and makes projection optical system PL relative with substrate P, but at this moment, shown in Figure 36 (c), slit plate 275 is backed out from the below of projection optical system PL.Then, cover 322 is covered on the through hole 320 of the slit plate of backing out below projection optical system PL 275.In this example, cover 322 is closed through hole 320 by covering slit plate 275 integral body.Moreover this cover 322 is covered on slit plate 275 by the arm 322A that constitutes lid mechanism.Then, having closed under the state of through hole 320, carry out exposure-processed for substrate P with cover 322.In the exposure-processed for substrate P, substrate objective table PST moves, and along with moving of this substrate objective table PST, the liquid LQ of space S P might leak (dispersing) to outside via through hole 320.So, in exposure-processed,, can prevent that the liquid LQ of space S P from leaking into outside undesirable condition via through hole 320 at least by stopping up through hole 320 with cover 322 for substrate P.In addition, can also prevent the liquid LQ vaporization of space S P and make the undesirable condition of the environmental change that exposure device EX is set.Moreover, using optical receiver 290 to detect the light time via liquid LQ,, after slit plate 322 takes off cover 322, shown in Figure 36 (a) and (b), use liquid feed mechanism 210 and liquids recovery mechanism 220 to form the 1st, the 2nd liquid and soak area L A1, LA2 at arm 322A.Moreover, be not limited to above-mentioned form as lid mechanism, for example also can be via hinge portion mounting cover parts on the assigned position of slit plate 275 or protuberance 283, use driver, in handling, the instrumentation that is undertaken by optical receiver 290 opens cover, the formation of closing cap parts in for the exposure-processed of substrate P.
(the 15th example)
As hole portion (access) the space S P between slit plate 275 and the optical receiver 290 is inner and external communications, the through hole 320 on being located at slit plate 275, as shown in figure 37, also can form and be located at the 2nd through hole that the 1st liquid soaks the outside of area L A1.Figure 37 is a sectional view of showing the example that is provided with the 2nd through hole 330, and Figure 38 is a planimetric map.In Figure 37 and Figure 38, on Z inclination objective table 252 and around the protuberance 283, be provided with surrounding wall portion 332 in the mode of surrounding this protuberance 283.In addition, be provided with cover 334, form cushion space portion 336 by protuberance 283, surrounding wall portion 332 and cover 334 on the top of surrounding wall portion 332.And, on the assigned position of the wall portion of protuberance 283 and holding member 285, be formed with the 2nd through hole 330 of connection space SP and buffering spatial portion 336.In this example, the 2nd through hole 330 as shown in figure 38, is provided with a plurality of (are 8 at this) with predetermined distance around space S P.Moreover the number of the 2nd through hole 330 and configuration can be set arbitrarily.By the 2nd through hole 330 is set, thereby even if slit plate 275 moves the volume change that the 1st liquid soaks regional AR1, soak the liquid LQ that the 2nd liquid that area L A1 is connected soaks area L A1 via through hole 320 and the 1st liquid, also can flow in the cushion space portion 330 via the 2nd through hole 330.Thereby, can prevent further that the 1st liquid from soaking the undesirable conditions such as pressure variation of area L A1.
As the variation of the example shown in Figure 37 and 38, as shown in figure 39, also the 2nd through hole 330 can be located on the slit plate 275.The 2nd through hole 330 is located at the outside that the 1st liquid soaks area L A1.Figure 40 is the planimetric map of the slit plate 275 of Figure 39.As shown in figure 40, the 2nd through hole 330 is provided with a plurality of, is 8 in this example.And this a plurality of (8) the 2nd through hole 330 is located at the slit portion 271 that clips slit plate 275 respectively and on the relative position.Thus, when the liquid LQ that soaks area L A1 when the 1st liquid flow in the space S P via through hole 320 when slit plate 275 moves, the liquid LQ of this space S P also can flow to the outside via the 2nd through hole 330.
When 2nd through hole 330 of liquid LQ on being formed on slit portion 275 overflows, this liquid LQ flows out to the outside of slit plate 275 (protuberance 283), but on Z inclination objective table 252, around the protuberance 283 that slit plate 275 is set, be provided with the recovering mechanism 340 of recovery from the liquid LQ of the 2nd through hole 330 outflows.Recovering mechanism 340 possesses: the slot part 341 on every side that is located at protuberance 283 on Z inclination objective table 252, be configured in the slot part 341, can keep porous part 342 liquid LQ, that constitute by porous ceramic or spongy parts, 341 that be connected via stream 343 and slot part, as the container 344 of fluid storage portion, with vacuum system 345 344 that be connected via stream 346 and container, that constitute by vacuum pump etc.In addition, on stream 346, be provided with the valve 346A that opens and closes this stream 346, on container 344, be connected with and discharge stream 344A.From the 2nd through hole 330 flow out to protuberance 283 around liquid LQ, keep by the porous parts 342 that are configured in the slot part 341.Recovering mechanism 340, thus by valve 346A action being opened drive under the state of stream 346 vacuum system 345, with the liquid LQ of slot part 341 (porous part 342) with its around the mode that sucks simultaneously of gas reclaim.The liquid LQ that reclaims concentrates in the container 344.In the time of in liquid LQ accumulates in container 344, discharge by discharging stream 344A.At this moment, because liquid LQ concentrates on the below of container 344, so liquid LQ can not flow in the vacuum system 345.That is, with container 344, will be from the liquid LQ and the gas gas-liquid separation around it of slot part 341 recovery.By recovering mechanism 340 is set, can prevent that soaking liquid LQ that area L A1 flows out from the 2nd through hole 330 and the 1st liquid remains in undesirable condition on the Z inclination objective table 252.
Moreover, the changeable mechanism of the size that changes this through hole 320 can also be set on through hole 320 (perhaps the 2nd through hole 330).For example, in the aerial image instrumentation, by expansion through hole 320 (or the 2nd through hole 330), the viscous resistance of the liquid LQ in the time of can reducing by through hole 320, liquid LQ can successfully move.In addition, by enlarging through hole 320, as reference Figure 36 explanation, just be easy in space S P, inject liquid LQ via through hole 320.And, time beyond the aerial image instrumentation (specifically in exposure actions time), by dwindling with changeable mechanism or stopping up through hole 320 (or the 2nd through hole 330), thereby the liquid LQ vaporization that can prevent space S P makes the environmental change that exposure device EX is set, and perhaps liquid LQ is along with the generation that flows out to outside undesirable condition from space S P of moving of substrate objective table PST.
(the 16th example)
, in each example of described the 11st～15 example, be on the zone of the part on the slit plate 275, to form the formation that the 1st liquid soaks area L A1 partly, as shown in figure 41, also slit plate 275 integral body can be immersed in the liquid LQ.In Figure 41, on Z inclination objective table 252, be provided with barrel parts 350, slit plate 275 is supported by the support component on the bottom 350B that is installed in barrel parts 350 351.In addition, (optical path downstream) disposes the optical element 276 that is kept by holding member 285 below slit plate 275.Holding member 285 also is installed on the bottom 350B of barrel parts 350.On support component 351, be provided with the 2nd through hole 330 space S P between slit plate 275 and the optical element 276 is inner and external communications.The peristome 350A upper end of bucket parts 350 is positioned at than on the high position of the recovery mouth 223A of the supply port 213A of slit plate 275, liquid supply nozzle 213 and liquids recovery nozzle 223.
When forming the 1st liquid and soak area L A1 and the 2nd liquid and soak area L A2, after the slit plate 275 that makes projection optical system PL and bucket parts 350 inside was relative, driving liquid feed mechanism 210 provided liquid LQ from supply nozzle 213 to bucket parts 350 inside.Be provided to the liquid LQ of barrel parts 350 inside, form the 1st liquid between the optical element 260 of leading section of projection optical system PL and the slit plate 275 and soak area L A1 thereby fill up, form the 2nd liquid in the space S P between slit plate 275 and the optical element 276 and soak area L A2 thereby fill up via through hole 320 or the 2nd through hole 330 simultaneously.In addition, synchronous therewith, by driving liquids recovery mechanism 220 and from reclaiming the liquid LQ of nozzle 223 recycling bin parts 350 inside, at the liquid LQ of bucket parts 350 solid ormal weights.
In described the 11st～16 example, to with optics (slit plate) 275 and optical receiver 290, the example of aerial image measuring device 270 that is applicable to the imaging characteristic of instrumentation projection optical system PL is illustrated, but as shown in figure 42, on substrate objective table PST, except aerial image measuring device 270, the rayed amount information that instrumentation has passed through projection optical system PL can also be set, for example the spy drives flat 11-16816 communique (corresponding U.S. Patent Publication 2002/0061469) disclosed exposure sensor (illuminance transducer) 360, for example the spy opens clear 57-117238 communique (corresponding United States Patent (USP) 4,465,368) and USP6,002,467 disclosed illumination unevenness sensor 370 etc.Also can be suitable for the present invention for these exposure sensors 360 and illumination unevenness sensor 370.Moreover, as long as specified by this world application or being allowed by the law of the country of selection, just quote the part of the disclosure of these patent gazettes as the record of this paper.
Figure 43 is the synoptic diagram of exposure sensor 360.Exposure sensor 360 is devices of exposure (illumination) of the exposure light of the instrumentation image planes side that shines projection optical system PL, possesses upper plate 363 that is located on the Z inclination objective table 252 and the optical sensor 364 that receives the light that has passed through this upper plate 363.Upper plate 363 possesses glass plate parts 362 and the light transmission amount that is located on this glass plate parts 362 top is adjusted film 361.The light transmission amount is adjusted film 361 and for example is made of the chromium film, has the light transmission of regulation, and is located on the top universe of glass plate parts 362.Thereby adjust film 361 and will incide light quantity dim light on the optical sensor 364 by the light transmission amount is set, prevent damage and the saturated such undesirable condition that cause by the light that has shone superfluous light quantity for optical sensor 364.Moreover in exposure sensor 360, for example predetermined timing is carried out the instrumentation action when changing mask M etc.
In addition, when the exposure of the exposure light EL that has passed through projection optical system PL with exposure sensor 360 instrumentations, same with aforementioned example, make under the relative state of projection optical system PL and upper plate 363, thereby between projection optical system PL and upper plate 363, provide liquid LQ to form the 1st liquid and soak area L A1, soaks area L A2 thereby simultaneously between upper plate 363 and optical sensor 364, provide liquid LQ to form the 2nd liquid, and the liquid LQ that soaks area L A1 via projection optical system PL and the 1st liquid is to upper plate 363 irradiation exposure light EL.Moreover, also can between upper plate 363 and optical sensor 364, dispose optical system (optical element), at this moment, the 2nd liquid is soaked area L A2 be formed on upper plate 363 and be configured between the locational optical element of the most close upper plate 363.In addition, optical sensor 364 is close on the upper plate 363.
As in this example, illustrating, the formation that the 2nd liquid soaks area L A2 is set on the exposure sensor, also go for the exposure sensor shown in described the 6th～the 8th example.
Figure 44 is the synoptic diagram of illumination unevenness sensor 370.Illumination unevenness sensor 370, be the illumination (intensity) that shines the exposure light on the image planes side at a plurality of positions instrumentation via projection optical system PL, thereby measure the device of the illumination irregular (Illumination Distribution) of the exposure light on the image planes side that shines projection optical system PL, possess upper plate 374 that is located on the Z inclination objective table 252 and the optical sensor 375 that receives the light that has passed through the pin hole portion 371 on this upper plate 374 that is located at.Upper plate 374 is that the film 372 contain light-proofness materials such as chromium is set on the surface of glass plate parts 373, thereby and with these film 372 compositions in the central portion be provided with the parts of pin hole portion 371.
When carrying out the instrumentation of Illumination Distribution with illumination unevenness sensor 370, under the relative state of the upper plate 374 that makes projection optical system PL and illumination unevenness sensor 370, fill up between this projection optical system PL and the upper plate 374 with liquid LQ, fill up between upper plate 374 and the optical sensor 375 with liquid LQ simultaneously.Then, mobile in turn pin hole portion 371 on a plurality of positions in the irradiation area (view field) of irradiation exposure light EL.Moreover, also can between upper plate 374 and optical sensor 375, dispose optical system (optical element), at this moment, the 2nd liquid is soaked area L A2 be formed on upper plate 374 and be configured between the locational optical element of the most close this upper plate 374.In addition, also upper plate 374 and optical sensor 375 can be close together.
As in this example, illustrating, on the irradiation unevenness sensor, the formation that the 2nd liquid soaks area L A2 is set, also go for the irradiation unevenness sensor shown in described the 2nd～the 5th example and the 9th～the 10th example.And then, in the aerial image measuring device that in the 11st～16 example, illustrates, also can adopt the structure that is adopted in the sensor of the 1st～10 example, the inner structure that replaces the aerial image measuring device that illustrates in the 11st～16 example is perhaps added the structure that is adopted in the sensor of the 1st～10 example on this inner structure.In addition, adopt the structure that illustrates in the described example on any one that can also be in aerial image measuring device 270 shown in Figure 42, exposure sensor 360, illumination unevenness sensor 370, perhaps in them any two or all in adopt the structure that illustrates in the described example.
And then the present invention can also be applicable to that spy for example drives flat 11-238680 communique and Te Kai 2000-97616 communique, U.S. Patent Publication sensor 2004/0090606 disclosed, that can load and unload with respect to substrate objective table PST (Z objective table 51).In addition, at United States Patent (USP) 6,650, also can be suitable for the present invention on the sensor of 399 disclosed instrumentation wave aberrations.Moreover, as long as specified by this world application or being allowed by the law of the country of selection, just quote the part of the disclosure of these patent gazettes as the record of this paper.
In each example of the described the 11st～16, there is no particular limitation for described its shape of nozzle, for example also can carry out supply or the recovery of liquid LQ to the long limit of the AR1 of view field with 2 pairs of nozzles.Moreover, in this case, for make from+directions X or-any one direction of directions X can carry out supply and the recovery of liquid LQ, supply nozzle and reclaim nozzle can be along configuration side by side up and down.That is, can adopt and to continue to fill up the optical element 260 of projection optical system PL and the various forms between the substrate P by enough enough liquid LQ.In addition, need not change the supply position of liquid LQ according to the moving direction of substrate P and reclaim the position, also can continue supply and the recovery of liquid LQ from the position of regulation.
In each example of the present invention, as light source 1, used the ArF quasi-molecule laser source, therefore use pure water as liquid LQ.Pure water can be easy to obtain in large quantities at semiconductor fabrication factory, has the advantage that the photoresist that can not give on the wafer W (substrate P) and optical element (lens) etc. bring baneful influence simultaneously.In addition, pure water can not bring baneful influence to environment yet, and simultaneously the containing ratio of impurity is extremely low, therefore can also look to clean wafers W (substrate P) surface, and the effect that is located at the surface of the optical element on the front end face of projection optical system PL.In addition, owing to consider the lower situation of its standard of pure water (pure water degree) of factory, therefore also can make exposure device self have ultrapure aquation mechanism in this case.
The refractive index n of known pure water (water) for the exposure light about wavelength 193nm roughly is about 1.44, when the light source as exposure light has used ArF excimer laser (wavelength 193nm), can be on wafer W (substrate P) with its short wavelengthization to 1/n, about promptly about 134nm, thereby obtain higher exploring degree.And then, enlarged about n doubly owing to compare in depth of focus and the air, promptly about about 1.44 times, therefore as long as under the situation that the depth of focus of the situation equal extent that can guarantee and use in air gets final product, the numerical aperture of projection optical system PL can be further increased, also the exploring degree can be improved in this.
Moreover, as the employed light source 1 of immersion exposure, also can use KrF quasi-molecule laser source or F 2LASER Light Source.Using F 2During LASER Light Source, the liquid (comprising that also the 2nd liquid soaks regional employed liquid) as immersion exposure is used can see through F as long as use 2Laser, for example fluorine class liquid oily or fluorinated polyether fluorine classes such as (PFPE) excessively gets final product.In addition, in addition, can also use the permeability that has for exposure light, refractive index is higher as far as possible, and for projection optical system PL be coated on the stable material (for example cedar oil) of the lip-deep photoresist of wafer W (substrate P).As previously mentioned, also the 1st liquid can be soaked regional employed liquid and the 2nd liquid and soak regional employed liquid, separately use according to purpose.
In addition, be suitable for the exposure device of described immersion method, it is the optical path space of exiting side that fills up the terminal optics of projection optical system PL with liquid (pure water), then with the formation of wafer W (substrate P) exposure, as the world disclose No. 2004/019128 disclosed, can also also use liquid (pure water) to fill up the optical path space of the light incident side of the terminal optics of projection optical system.At this moment, even if projection optical system PL has the bigger numerical aperture more than or equal to 1.0,, also can adopt the parallel flat or the very little lens of refracting power of no refracting power as the terminal optics.
Moreover under the situation of using immersion method, the numerical aperture NA that also has projection optical system is 0.9～1.7 situation.Under the big situation of the numerical aperture NA of such projection optical system change,, so preferably use polarized irradiation with the random polarization of the light of conduct exposure all the time use, the situation that exists imaging characteristic to worsen because of polarization effect.At this moment, can carry out the straight line polarized irradiation that vertically matches with the line graph of the line of mask (reticle mask) and space diagram, and penetrate the diffraction light of S polarized component (along the component of polarization direction longitudinally of line graph) from the figure of mask (reticle mask) in a large number.
Under filling up projection optical system with liquid and being coated on situation between the resist on the substrate surface, compare with the situation of filling up projection optical system with air (gas) and be coated between the resist on the substrate surface, since help contrast raising the S polarized component diffraction light, uprise in the lip-deep transmissivity of resist, therefore even if surpass under 1.0 such situations at the numerical aperture NA of projection optical system, also can obtain higher imaging performance.In addition, if phase shifts mask and the flat 6-188169 communique of Te Kai is disclosed, with the oblique incidence irradiation that vertically the matches appropriate combination such as (particularly, the nib irradiation) of line graph, just more effective.
In addition, just with the straight line polarized irradiation that vertically matches (S polarized irradiation) of the line graph of mask (reticle mask), as the spy open flat 6-53120 communique disclosed, along being that the polarized irradiation method of tangent line (week) direction straight line polarization of the circle at center and the combination of oblique incidence irradiation also are effective with the optical axis.Particularly, be not the line graph of the figure of mask (reticle mask) along a direction extension of regulation, under the situation that is mixed with the line graph that extends along a plurality of different directions, equally as the spy open flat 6-53120 communique disclosed, by will be along the polarized irradiation method of tangential direction straight line polarization that with the optical axis is the circle at center, with annular irradiation and usefulness, even if under the bigger situation of the numerical aperture NA of projection optical system, also can obtain higher imaging characteristic.
In addition, in described example, adopted with liquid and filled up exposure device between projection optical system PL and the wafer W (substrate P) partly, at the liquid immersion exposure apparatus that maintenance is moved among liquid bath as the objective table of the substrate of exposure object, with the liquid tank that on objective table, forms prescribed depth, and substrate remained on wherein the liquid immersion exposure apparatus, also can be suitable for the present invention.Make structure and the exposure actions of maintenance as objective table mobile liquid immersion exposure apparatus among liquid bath of the substrate of exposure object, for example open in the flat 6-124873 communique and at length put down in writing the spy, in addition, on objective table, form the liquid tank of prescribed depth, and substrate is remained on the structure and the exposure actions of liquid immersion exposure apparatus wherein, for example open flat 10-303114 communique and United States Patent (USP) 5 the spy, 825, at length put down in writing in 043, as long as all are allowed by the law by the country of application appointment of this world or selection, just quote the part of the record content of these documents as the record of this paper.
In addition, the present invention can also be applicable to processed substrates such as possessing respectively the mounting wafer, then the exposure device of two loading bench-types of 2 objective tables that can move independently along the XY direction.The structure of the exposure device of two loading bench-types and exposure actions, for example open flat 10-163099 number and the spy opens (corresponding United States Patent (USP) 6 flat 10-214783 number the spy, 341,007,6,400,441,6,549,269 and 6,590,634), special table 2000-505958 number (corresponding United States Patent (USP) 5,969,441) or United States Patent (USP) 6,208, be disclosed in 407,, just quote the part of these disclosed contents as the record of this paper as long as specified by this world application or being allowed by the law of the country of selection.
In addition, the present invention, can also be applicable to the spy open flat 11-135400 number disclosed like that, possess exposure objective table that can move and the exposure device that possesses the instrumentation objective table of various instrumentation parts and sensor in the mode that is keeping processed substrates such as wafer.At this moment, at least a portion among a plurality of sensors (measuring device) that illustrate in each example of the described the 1st～16 can be carried on the instrumentation objective table.
In addition and then, in described example, as exposure light source 1, situation with the ArF quasi-molecule laser source is that example is illustrated, but, can also use the extra-high-pressure mercury vapour lamp that for example penetrates g line (wavelength 436nm), i line (wavelength 365nm) or KrF excimer laser (wavelength 248nm), F in addition as exposure light source 1 2Laser (wavelength 157nm), Kr 2Laser (wavelength 146nm), YAG laser high frequency generating apparatus or the high frequency generating apparatus of semiconductor laser.
And then, as light source, can also use will be from infrared territory that dfb semiconductor laser instrument or fiber optics laser instrument excite or the single wavelength laser of visible range, for example the fiber amplifier with mixed erbium (or erbium and this two side of ytterbium) amplifies, and becomes the higher hamonic wave of ultraviolet light with nonlinear optics crystallization wavelength conversion.For example, if the excitation wavelength of single wavelength laser instrument is made as in the scope of 1.51～1.59 μ m, then can exports 8 times of interior higher hamonic waves of scope that wavelength is 189～199nm take place, or 10 times of interior higher hamonic waves of scope that wavelength is 151～159nm take place.
In addition, if excitation wavelength is made as in the scope of 1.03～1.12 μ m, then can export 7 times of interior higher hamonic waves of scope that wavelength is 147～160nm take place, if particularly excitation wavelength is made as in the scope of 1.099～1.106 μ m, then can obtain taking place wavelength and be the 7 times of higher hamonic waves, promptly and F in the scope of 157～158 μ m 2Laser roughly is the ultraviolet light of identical wavelength.At this moment, as the single wavelength optical excited laser, for example can use ytterbium/doped layer/fiber laser.
In addition, in described example, as the glass material of the glass material that is located at the optical element in the described illuminating optical system IS, the glass material that constitutes the refractive component of projection optical system PL, plano- convex lens 41,45,52,57,62,71 etc., to use fluorite (calcium fluoride: CaF 2) situation be that example is illustrated.But these also can select magnesium fluoride (MgF according to the exposure light wavelength 2) etc. the quartz glass body etc. of fluoride crystal or their mix-crystal and the materials such as fluorine or hydrogen that mixed see through the optical material of vacuum-ultraviolet light.Moreover, the quartz glass body of the material of the regulation of having mixed, because when the exposure light wavelength becomes than just reduction of transmissivity in short-term about 150nm, therefore work as the vacuum ultraviolet light time about conduct exposure light uses wavelength smaller or equal to 150nm, as the optical material of optical element, can use fluoride crystal or their mix-crystals such as fluorite (calcium fluoride), magnesium fluoride.
In addition, in described the 1st～the 10th example, with the exposure device of substep repetitive mode, for example, in the 11st～16 example, be that example is illustrated respectively with the exposure device of substep scan mode, but the present invention go for the exposure device of any way.In addition, the present invention can also be applicable at substrate (wafer) and go up the exposure device that overlaps the substep suture way of back transfer printing to 2 visuals ground of major general.And then, the present invention not only goes for the employed exposure device of manufacturing of semiconductor element, can also be applicable to and when the manufacturing of the device that comprises liquid crystal display cells (LCD) etc., be used for component graphics is transferred to exposure device on the glass plate, when the manufacturing of thin-film head, be used for component graphics is transferred to exposure device on the ceramic wafers, and employed exposure device the etc. during manufacturing of imaging apparatus such as CCD.And then, in order to make on light exposure device, EUV exposure device and the electron ray exposure device etc. reticle mask or the mask that uses, and circuitous pattern is transferred on the exposure device on glass substrate or the silicon wafer etc., also can be suitable for the present invention.At this, in the exposure device that uses DUV (extreme ultraviolet) light and VUV (vacuum ultraviolet) light etc., generally use the infiltration type reticle mask, as the reticle mask substrate, use quartz glass, fluorite, magnesium fluoride or the crystal etc. of quartz glass, the fluorine that mixed.In addition, near the X line exposing device of mode or electron ray exposure device etc., use infiltration type mask (stencilling mask, membrane mask), use silicon wafer etc. as mask substrate.Moreover such exposure device is opened flat 11-194479 number, spy WO99/34255 number, WO99/50712 number, WO99/66370 number, spy and is opened 2000-12453 number, spy and be disclosed in opening 2000-29202 number etc.
Moreover; substrate P as described each example; the semiconductor wafer of semiconductor devices manufacturing usefulness just, the glass substrate of can also the suitable displays part using, the ceramic wafers that thin-film head is used or the master (synthetic quartz, silicon chip) of mask that in exposure device, uses or reticle mask etc.
When going up under the situation of using linear motor at substrate objective table PST (wafer stage 15) and mask objective table MST (reticle mask objective table 13), can use the air suspension type that has adopted air bearing, and any one of magnetic levitation type that has adopted Lorentz force or reactance power.In addition, each objective table PST (15), MST (13) can be the types that moves along guide rail, also can be the no rail types that guide rail is not set.On objective table, used the example of linear motor, at United States Patent (USP) 5,623, be disclosed in 853 and 5,528,118, as long as all are allowed by the law by the country of application appointment of this world or selection, just quote the part of the record content of these documents as the record of this paper.
Driving mechanism as each objective table PST (15), MST (13), also can use magnet unit with the magnet two-dimensional arrangement, with the armature unit of coil two-dimensional arrangement is relative, and drive the planar motor of each objective table PST (15), MST (13) by electromagnetic force.At this moment, as long as any one party of magnet unit and armature unit is connected on objective table PST (15), the MST (13), and the all-moving surface side that the opposing party of magnet unit and armature unit is located at objective table PST (15), MST (13) got final product.
In order not make the reacting force that produces that moves pass to projection optical system PL, can use frame parts mechanically it to be guided into ground (the earth) because of substrate objective table PST (wafer stage 15).The disposal route of this reacting force, for example, at United States Patent (USP) 5,528, by at length open,, just quote the part of the record content of the document in 118 (spy opens flat 8-166475 communique) as the record of this paper as long as specified by this world application or being allowed by the law of the country of selection.
To pass projection optical system PL in order not making, can to use frame parts mechanically it to be guided into ground (the earth) because of the reacting force that produces that moves of mask objective table MST (reticle mask objective table 13).The disposal route of this reacting force, for example, at United States Patent (USP) the 5th, 874, by at length open,, just quote the part of the disclosure of the document in 820 (spy opens flat 8-330224 communique) as the record of this paper as long as specified by this world application or being allowed by the law of the country of selection.
The exposure device EX of described example by the various subsystems of the cited various constitutive requirements of the scope that will comprise the application's claim, fits together and makes in the mode of the mechanical precision that keeps regulation, electricity precision, optical accuracy.In order to ensure these various precision, in the front and back of this assembling, the adjustment that various optical systems are used to reach optical accuracy, the adjustment that various mechanical systems are used to reach mechanical precision, the adjustment that various electricity systems are used to reach the electricity precision.From the assembling procedure of various subsystems, comprise the wiring connection of the mutual mechanical connection of various subsystems, circuit, the pipe arrangement connection of pneumatic circuit etc. to exposure device.In that various subsystems also had each subsystem assembling procedure separately certainly before the assembling procedure of exposure device from this.After installing to various groups of subsystems on the exposure device, comprehensively adjust, guarantee various precision as exposure device integral body.Moreover the manufacturing of exposure device is preferably in the cleaning shop of having managed temperature and cleanliness etc. and carries out.
Secondly, the example to the manufacture method of the microdevice of the exposure device that uses example of the present invention in photo-mask process and exposure method describes.Figure 18 is the process flow diagram of an example of showing the manufacturing process of microdevice (semi-conductor chips such as IC and LSI, liquid crystal panel, CCD, thin-film head, micromachine etc.).As shown in figure 18, at first, in step S20 (design procedure), carry out the functional performance design (for example, the circuit design of semiconductor devices etc.) of microdevice, and be used to realize the graphic designs of this function.Then, in step S21 (mask manufacture step), make the mask (reticle mask) of the circuitous pattern that has formed design.On the other hand, in step S22 (wafer fabrication steps), with made wafers such as silicon.
Secondly, in step S23 (processing of wafers step), use mask and the wafer in step S20～step S22, prepared, as described later, on wafer, form actual circuit etc. with photoetching technique etc.Then, in step S24 (device number of assembling steps), the wafer that is used in step S23 processing carries out the device assembling.In this step S24, comprise scribing operation, bond sequence and packaging process operations such as (chip inclosures) as required.At last, in step S25 (inspection step), carry out the inspection such as confirming operation test, durability test of the microdevice in step S24, made.After having passed through such operation, microdevice is finished, and it can be dispatched from the factory.
Figure 19 is an example of showing the detailed flow process of step S23 under the situation of semiconductor devices, Figure 18.In Figure 19, in step S31 (oxidation step), with the surface oxidation of wafer.In step S32 (CVD step), on wafer surface, form dielectric film.In step S33 (electrode formation step), on wafer, form electrode by evaporation.In step S34 (ion implantation step), on wafer, inject ion.Above each step S31～step S34, the pretreatment procedure in each stage of formation processing of wafers in each stage, can be selected in processing as required.
In each stage of wafer processing procedure, when aforesaid pretreatment procedure finishes, carry out postprocessing working procedures as described below.In this postprocessing working procedures, at first, in step S35 (resist formation step), on wafer, be coated with emulsion.Then, in step S36 (step of exposure), utilize above etching system (exposure device) that illustrates and exposure method that the circuitous pattern of mask is transferred on the wafer.Then, in step S37 (development step), with the wafer development of exposure, in step S38 (etching step), by the exposure component of the part beyond having etched away the part of resist remaining.Then, in step S39 (resist is removed step), finish and become useless resist thereby remove etching.By carrying out these pretreatment procedures and postprocessing working procedures repeatedly, on wafer, form circuitous pattern multiplely.
Utilizability on the industry
According to the present invention, owing to will pass through by providing liquid to have to the image planes side required The liquid of performance soaks the exposure light of the projection optical system of usefulness, at the picture that does not have to projection optical system The face side provides under the state of liquid and receives, and the impact ground of state that therefore can not be subjected to water is high-precision Degree ground carries out instrumentation.
For example, incide exposure light on the end face of projection optical system by adjusting (dwindling) The angle (outermost light and optical axis angulation) of bundle is not even if there is being the shape of liquid Under the attitude, also can receive the exposure light that has passed through projection optical system.
In addition, according to the present invention, owing among the exposure light from projection optical system, see through The light of light transmissive portion not inciding on the optically focused parts and by optically focused by the mode in the gas, Therefore even if the increase because of the numerical aperture of projection optical system has exposing to the sun of bigger incidence angle Light light incides on the light transmissive portion, also can receive reliably the exposure light that has passed through light transmissive portion.
And then, according to the present invention, owing to make exposure light from projection optical system via liquid Incide on the plate-shaped member, with among the light that incides on the plate-shaped member, passed through light transmissive portion Light-receiving, and in not relative with the projection optical system light transmissive portion that forms on the other hand, Therefore can with the one side planarization relative with projection optical system, can prevent that bubble is to this The one side of plate-shaped member is adhered to, and the liquid between projection optical system and the plate-shaped member is mixed Disorderly etc. In addition, owing to also be not provided as the opening (hole) of light transmissive portion at plate-shaped member, Therefore can also prevent the immersion of liquid.
In addition and then, according to the present invention, by according to the instrumentation result, under optimal condition The graph exposure of mask is transferred on the substrate, can be with the trickle figure that is formed on the mask Accurately be transferred on the substrate. Its result, device that can well production high integration of qualification rate Part.
In addition, according to the present invention since passed through projection optical system and liquid exposure light it In, seen through the light of light transmissive portion, be arranged on optical system on the measuring device not pass through gas Therefore mode in the body guides and incides on the optical receiver, even if because of the number of projection optical system The increase in value aperture and exposure light with bigger incidence angle incide on the light transmissive portion, also can The enough exposure light that has passed through light transmissive portion that receives reliably.
According to the present invention, passed through projection optics system owing to can receive well with optical receiver The light of system therefore can be at the shape of having set optimal conditions of exposure according to this light-receiving result Under the attitude, carry out high-precision exposure-processed.

Claims (30)

1. exposure device is radiated on the substrate via liquid by the light that will expose and with described base plate exposure, wherein, possesses:
Projection optical system; And
Measuring device has the light transmissive portion of the image planes side that is arranged on described projection optical system, and the optical receiver that receives the exposure light that has passed through described projection optical system via this light transmissive portion,
The optical receiver of described measuring device does not have under the state of liquid between described projection optical system and described light transmissive portion, receives the exposure light that has passed through described light transmissive portion and projection optical system.
2. exposure device as claimed in claim 1, wherein, receive the exposure light time of having passed through described light transmissive portion and described projection optical system at optical receiver with described measuring device, incide the incident angle of the exposure light on the end face of described projection optical system, be adjusted in the mode of this exposure light from the space outgoing of this end face between projection optical system and described light transmissive portion.
3. exposure device as claimed in claim 2, wherein, and then, possess the irradiation system of exposure photoconduction to described projection optical system, the adjustment of the incident angle of described exposure light, by adjust in the described irradiation system, carry out with the beam distribution of described exposure light in the face of the pupil face conjugation of described projection optical system.
4. exposure device as claimed in claim 2, wherein, the angular setting of described exposure light is undertaken by the coefficient of coherence σ that adjusts described irradiation system.
5. exposure device as claimed in claim 4, wherein, the numerical aperture NA of described projection optical system is more than or equal to 1, and the coefficient of coherence σ of described irradiation system is 0.05～0.50.
6. exposure device as claimed in claim 1, wherein, described measuring device, have the light that is used to make from described light transmissive portion and incide optics on the optical receiver, described optics so that from the light of described light transmissive portion not by the mode in the gas be configured in described light transmissive portion near.
7. exposure device as claimed in claim 1, wherein, described measuring device has plate-shaped member, and the one side of described plate-shaped member disposes in the mode relative with described projection optical system, is formed with described light transmissive portion on the part of another side.
8. exposure device is mapped on the substrate by the illumination that will expose and with described base plate exposure, wherein, possesses:
Projection optical system; And
Measuring device, the portion that sees through, optical receiver, and optically focused parts with image planes side of being configured in described projection optical system wherein, incide light transmissive portion from the exposure light of described projection optical system, the optically focused parts are used to make the light from this light transmissive portion to incide optical receiver
Described optically focused parts so that from the exposure light of described projection optical system not by inciding the mode on the described optically focused parts in the gas, be configured between described light transmissive portion and the described optical receiver.
9. exposure device as claimed in claim 8 wherein, has passed through the exposure light of described projection optical system, via liquid, incides on the light transmissive portion of described measuring device.
10. exposure device as claimed in claim 8, wherein, described optically focused parts have the par relative with described projection optical system, and described light transmissive portion is formed on the described par.
11. exposure device as claimed in claim 8, wherein, described measuring device has the plate-shaped member that possesses described light transmissive portion, and described optically focused parts are close on the described plate-shaped member.
12. exposure device as claimed in claim 11, wherein, the one side of described plate-shaped member disposes in the mode relative with described projection optical system, forms described light transmissive portion on the part of another side, and be close to described optically focused parts on another side.
13. an exposure device, by exposing rayed via liquid on substrate and, wherein, possess with described base plate exposure:
Projection optical system; And
Measuring device has one side and disposes and formed the plate-shaped member of light transmissive portion in the mode relative with described projection optical system on the part of another side, and receives the optical receiver from the light of described light transmissive portion,
The optical receiver of described measuring device receives exposure light via the liquid that is filled between described projection optical system and the described plate-shaped member.
14. an exposure device is mapped on the substrate by the illumination that will expose via liquid and with described base plate exposure, wherein, possesses:
Projection optical system;
Optics with light transmissive portion of the image planes side that is configured in described projection optical system; And
Receive the optical receiver that has passed through the light of described projection optical system and had the light receiving element that is provided with in contact with optics via described optics.
15. exposure device as claimed in claim 14 wherein, fills up under the state of liquid between described projection optical system and described optics, described optical receiver receives the light that has passed through projection optical system and liquid.
16. exposure device as claimed in claim 14, wherein, one side relatively moves described light transmissive portion and the light that has passed through described projection optical system, and one side makes described optical receiver receive light.
17. an exposure device, by exposing rayed via liquid on substrate and, wherein, possess with described base plate exposure:
Projection optical system;
Have the light transmissive portion of the image planes side that is configured in described projection optical system and on assigned position, be formed with the optics of through hole; And
Receive the optical receiver of the light that has passed through described projection optical system via described optics.
18. exposure device as claimed in claim 17, wherein, described through hole comprises that the described light transmissive portion that is formed on described optics is clipped in the middle and relative locational a plurality of holes.
19. exposure device as claimed in claim 17 wherein, fills up liquid between described optics and described optical receiver.
20. exposure device as claimed in claim 17 wherein, fills up under the state of liquid between described projection optical system and described optics, described optical receiver receives light.
21. exposure device as claimed in claim 17, wherein, described through hole is located at the inboard that the liquid that fills up the liquid between described projection optical system and the described optics soaks the zone.
22. exposure device as claimed in claim 17, wherein, soak the regional outside at the liquid that fills up the liquid between described projection optical system and the described optics, be provided with the inside in the space between described optics and the described optical receiver and the access of external communications.
23. exposure device as claimed in claim 17, wherein, one side relatively moves described optics and described projection optical system, and one side makes described optical receiver receive light via described liquid.
24. exposure device as claimed in claim 18 wherein, has the recovering mechanism of recovery from the liquid of described access outflow.
25. exposure device as claimed in claim 17 wherein, has the lid mechanism that opens and closes described access.
26. exposure device as claimed in claim 25, wherein, described lid mechanism is closed described through hole at least in the exposure-processed for described substrate.
27. as claim 14 or 17 described exposure devices, wherein, described optics is that the image planes side in described projection optical system is arranged on the most locational optics of close projection optical system.
28. as claim 14 or 17 described exposure devices, wherein, and then, possessing and keep and the substrate objective table of moving substrate, the light transmissive portion of described optics is located on the position with the roughly the same height of substrate stage surface.
29. an exposure device, with base plate exposure, this exposure device comprises utilization exposure light via liquid:
Projection optical system;
Movable part is arranged on the image planes side of described projection optical system, has light transmissive portion; And
Measuring device detects exposure light by described projection optical system and light transmissive portion.
30. an exposure device, with base plate exposure, this exposure device comprises utilization exposure light via liquid:
Projection optical system;
Movable part is arranged on the image planes side of described projection optical system, has the optical element of light transmissive portion and the medium by being different from gas; And
Measuring device detects exposure light by described projection optical system, light transmissive portion, medium and optical element.
CN2009101297122A 2003-09-29 2004-09-29 Exposure unit Expired - Fee Related CN101526759B (en)

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CN111277735A (en) * 2019-11-04 2020-06-12 苏州臻迪智能科技有限公司 Underwater cloud deck, underwater imaging system and underwater robot

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US7889315B2 (en) 2006-04-13 2011-02-15 Asml Netherlands B.V. Lithographic apparatus, lens interferometer and device manufacturing method
US20130050674A1 (en) * 2011-08-24 2013-02-28 Asml Netherlands B.V. Lithographic apparatus, substrate table and device manufacturing method
US9651873B2 (en) * 2012-12-27 2017-05-16 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium
CN113138163A (en) * 2021-04-22 2021-07-20 平方和(北京)科技有限公司 Switchable light source system

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CN111277735A (en) * 2019-11-04 2020-06-12 苏州臻迪智能科技有限公司 Underwater cloud deck, underwater imaging system and underwater robot
CN111277735B (en) * 2019-11-04 2021-07-16 苏州臻迪智能科技有限公司 Underwater cloud deck, underwater imaging system and underwater robot

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CN1868032A (en) 2006-11-22
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