JP4608876B2 - Exposure apparatus and device manufacturing method - Google Patents

Description

  The present invention relates to an exposure apparatus that exposes a substrate with a pattern image projected by the projection optical system in a state where at least a part between the projection optical system and the substrate is filled with a liquid, and a device manufacturing method using the exposure apparatus. Is.

Semiconductor devices and liquid crystal display devices are manufactured by a so-called photolithography technique in which a pattern formed on a mask is transferred onto a photosensitive substrate. An exposure apparatus used in this photolithography process has a mask stage for supporting a mask and a substrate stage for supporting a substrate, and a mask pattern is transferred via a projection optical system while sequentially moving the mask stage and the substrate stage. It is transferred to the substrate. In recent years, in order to cope with higher integration of device patterns, higher resolution of the projection optical system is desired. The resolution of the projection optical system becomes higher as the exposure wavelength used becomes shorter and the numerical aperture of the projection optical system becomes larger. Therefore, the exposure wavelength used in the exposure apparatus is shortened year by year, and the numerical aperture of the projection optical system is also increasing. The mainstream exposure wavelength is 248 nm of the KrF excimer laser, but the 193 nm of the shorter wavelength ArF excimer laser is also being put into practical use. Also, when performing exposure, the depth of focus (DOF) is important as well as the resolution. The resolution R and the depth of focus δ are each expressed by the following equations.
R = k ₁ · λ / NA (1)
δ = ± k ₂ · λ / NA ² (2)
Here, λ is the exposure wavelength, NA is the numerical aperture of the projection optical system, and k ₁ and k ₂ are process coefficients. From the equations (1) and (2), it can be seen that the depth of focus δ becomes narrower when the exposure wavelength λ is shortened and the numerical aperture NA is increased in order to increase the resolution R.

If the depth of focus δ becomes too narrow, it becomes difficult to match the substrate surface with the image plane of the projection optical system, and the focus margin during the exposure operation may be insufficient. Therefore, as a method for substantially shortening the exposure wavelength and increasing the depth of focus, for example, an immersion method disclosed in International Publication No. 99/49504 has been proposed. In this immersion method, the space between the lower surface of the projection optical system and the substrate surface is filled with a liquid such as water or an organic solvent, and the wavelength of the exposure light in the liquid is 1 / n (n is the refractive index of the liquid). The resolution is improved by utilizing the fact that the ratio is usually about 1.2 to 1.6), and the depth of focus is expanded about n times.
International Publication No. 99/49504 Pamphlet

  By the way, in a state where the liquid is filled between the lower surface of the projection optical system and the substrate surface, bubbles adhere to the lower surface of the projection optical system and the substrate surface. If there are bubbles in the substrate, the phenomenon that the light for forming the image on the substrate does not reach the substrate or the light for forming the image on the substrate does not reach the desired position on the substrate occurs. The pattern image formed on the substrate is deteriorated.

  The present invention has been made in view of such circumstances, and suppresses deterioration of a pattern image caused by bubbles in the liquid when performing exposure processing by filling the liquid between the projection optical system and the substrate. An object of the present invention is to provide an exposure apparatus that can be used, and a device manufacturing method that uses the exposure apparatus.

  In order to solve the above-described problems, the present invention adopts the following configuration corresponding to FIGS. 1 to 9 shown in the embodiment.

According to a first aspect of the present invention, there is provided an exposure apparatus for exposing a substrate with an image of a predetermined pattern,
A projection optical system (PL) that projects an image of the predetermined pattern onto a substrate;
A liquid supply device (1) for supplying a liquid between the projection optical system and the substrate;
There is provided an exposure apparatus comprising: a gas removing device (21) for removing a gas component contained in a liquid supplied between the projection optical system and the substrate.

Since the exposure apparatus of the present invention includes a gas removal device for removing a gas component from the liquid, the liquid from which the gas component has been sufficiently removed can be supplied between the projection optical system and the substrate. . Furthermore, not only the liquid existing between the projection optical system and the substrate (in the optical path of the exposure light) but also the liquid existing in the liquid flow path from the gas removal device to the space between the projection optical system and the substrate. The generation of bubbles is suppressed. Gas removal device, the air concentration of the liquid is desirably removes gaseous components from the liquid to be less than 0.016cm ³ / cm ^3. The gas removal device may use a heating device, a decompression device, a degassing membrane, or a combination thereof. The gas removing device may be disposed inside or outside the liquid supply device, and may be disposed outside the chamber of the exposure apparatus.

  The liquid supply apparatus may include a plurality of supply nozzles that supply a liquid between the projection optical system and the substrate, and a plurality of recovery nozzles that recover the liquid supplied between the projection optical system and the substrate. By using a plurality of nozzles, liquid can be supplied uniformly to the projection region. The exposure apparatus can include a stage on which the substrate is placed and moved. Exposure can be performed while the stage moves the substrate relative to the image projected from the projection optical system (scan exposure). In this case, it is preferable that the supply nozzle ejects the liquid in the direction of movement of the substrate because the inflow resistance of the supply liquid is reduced and the movement of the stage is not affected.

  The exposure apparatus of the present invention may further include a temperature adjustment device for adjusting the temperature of the liquid supplied from the liquid supply device. It is desirable that the temperature adjusting device adjusts the temperature of the liquid so as to be the atmospheric temperature in the exposure apparatus, for example, in the chamber that houses the exposure apparatus. In this way, the temperature of the substrate can be controlled by supplying the temperature-adjusted liquid between the projection optical system and the substrate.

According to a second aspect of the present invention, there is provided an exposure apparatus (EX) that projects an image of a pattern onto a substrate (P) by a projection optical system (PL) and exposes the substrate.
A liquid supply device (1) for filling at least a part between the projection optical system (PL) and the substrate (P) with the liquid (50);
An exposure apparatus (EX) having a bubble suppression device (21) that suppresses generation of bubbles in the liquid is provided.

  According to the present invention, since the bubble suppression device that suppresses the generation of bubbles in the liquid between the projection optical system and the substrate is provided, the exposure process can be performed in a state where no bubbles exist in the liquid on the optical path of the exposure light. Therefore, it is possible to prevent a pattern image from being deteriorated due to bubbles and manufacture a device having high pattern accuracy. For example, if a liquid supply device that supplies liquid between the projection optical system and the substrate is provided with a bubble suppression device that suppresses the generation of bubbles in the liquid, the generation of bubbles in the liquid is sufficiently suppressed. After that, this liquid can be supplied between the projection optical system and the substrate. Therefore, bubbles are not generated from the liquid filled between the projection optical system and the substrate. In addition, even if bubbles are generated in the flow path through which the liquid flows, such as the lower surface of the projection optical system and the substrate surface, the liquid flows sufficiently in the flow path because the liquid in which generation of bubbles is sufficiently suppressed flows in the flow path. Air bubbles generated in the road can be absorbed and removed. As described above, since the exposure process can be performed in a state where no bubbles are present in the liquid on the optical path of the exposure light, it is possible to prevent deterioration of the pattern image caused by the bubbles and manufacture a device having high pattern accuracy.

  In the exposure apparatus of the present invention, it is preferable that the bubble suppression device includes a deaeration device that removes gas in the liquid. The deaeration device preferably includes a heating device for heating the liquid. The heating device may set the temperature T of the liquid to 30 ° C. <T ≦ 100 ° C. Furthermore, the deaeration device may include a decompression device that decompresses the interior of the device in which the liquid is held. The decompression device can set the pressure according to the temperature of the liquid. Further, it is preferable that the deaeration device determines a deaeration level so that bubbles are not generated by a temperature change of at least a part of the liquid between the projection optical system and the substrate. Further, the deaeration device may determine a deaeration level so that bubbles are not generated by a pressure change with respect to the liquid between the projection optical system and the substrate.

  Furthermore, in the present invention, the deaeration device is preferably a membrane deaeration device. The membrane deaerator preferably has a hollow fiber member. The hollow fiber member may be gas permeable and liquid impermeable. Furthermore, it is preferable that the liquid supply device includes a heating device that heats the liquid supplied to the membrane deaerator and reduces the dissolved concentration of the gas in the liquid supplied to the membrane deaerator.

  In the exposure apparatus of the present invention, it is preferable that the liquid in which the generation of bubbles is suppressed by the bubble suppression device is supplied between the projection optical system and the substrate without contact with the gas.

  The present invention provides a device manufacturing method using the exposure apparatus according to the first or second aspect of the present invention.

  According to the present invention, since the bubble suppression device that suppresses the generation of bubbles in the liquid between the projection optical system and the substrate is provided, the exposure process can be performed in a state where no bubbles exist in the liquid on the optical path of the exposure light. Therefore, it is possible to prevent a pattern image from being deteriorated due to bubbles and manufacture a device having high pattern accuracy.

  The exposure apparatus and device manufacturing method of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic block diagram showing an embodiment of the exposure apparatus of the present invention.

First Embodiment In FIG. 1, an exposure apparatus EX illuminates a mask stage MST for supporting a mask M, a substrate stage PST for supporting a substrate P, and a mask M supported by the mask stage MST with exposure light EL. The overall operation of the illumination optical system IL, the projection optical system PL that projects and exposes the image of the pattern of the mask M illuminated by the exposure light EL onto the substrate P supported by the substrate stage PST, and the entire exposure apparatus EX is controlled. And a control device CONT.

  Here, in the present embodiment, as the exposure apparatus EX, scanning exposure is performed in which the pattern formed on the mask M is exposed to the substrate P while the mask M and the substrate P are synchronously moved in different directions (reverse directions) in the scanning direction. A case where an apparatus (so-called scanning stepper) is used will be described as an example. In the following description, the direction that coincides with the optical axis AX of the projection optical system PL is the Z-axis direction, the synchronous movement direction (scanning direction) between the mask M and the substrate P in the plane perpendicular to the Z-axis direction is the X-axis direction, A direction (non-scanning direction) perpendicular to the Z-axis direction and the Y-axis direction is defined as a Y-axis direction. Further, the directions around the X axis, the Y axis, and the Z axis are defined as θX, θY, and θZ directions, respectively. Here, the “substrate” includes a semiconductor wafer coated with a resist, and the “mask” includes a reticle on which a device pattern to be reduced and projected on the substrate is formed.

The illumination optical system IL illuminates the mask M supported by the mask stage MST with the exposure light EL, and the exposure light source, and an optical integrator and an optical integrator for uniformizing the illuminance of the light beam emitted from the exposure light source A condenser lens that collects the exposure light EL from the light source, a relay lens system, a variable field stop that sets the illumination area on the mask M by the exposure light EL in a slit shape, and the like. A predetermined illumination area on the mask M is illuminated with the exposure light EL having a uniform illuminance distribution by the illumination optical system IL. As the exposure light EL emitted from the illumination optical system IL, for example, far ultraviolet light (g-line, h-line, i-line) and KrF excimer laser light (wavelength 248 nm) emitted from a mercury lamp, DUV light), vacuum ultraviolet light (VUV light) such as ArF excimer laser light (wavelength 193 nm) and F ₂ laser light (wavelength 157 nm), or the like is used. In this embodiment, ArF excimer laser light is used.

  The mask stage MST supports the mask M, and can be two-dimensionally moved in a plane perpendicular to the optical axis AX of the projection optical system PL, that is, in the XY plane, and can be slightly rotated in the θZ direction. Mask stage MST is driven by a mask stage driving device MSTD such as a linear motor. The mask stage driving device MSTD is controlled by the control device CONT. The two-dimensional position and rotation angle of the mask M on the mask stage MST are measured in real time by the laser interferometer, and the measurement result is output to the control device CONT. The controller CONT positions the mask M supported by the mask stage MST by driving the mask stage driving device MSTD based on the measurement result of the laser interferometer.

  The projection optical system PL projects and exposes the pattern of the mask M onto the substrate P at a predetermined projection magnification β, and is composed of a plurality of optical elements (lenses). These optical elements are mirrors as metal members. It is supported by the cylinder PK. In the present embodiment, the projection optical system PL is a reduction system having a projection magnification β of, for example, 1/4 or 1/5. Note that the projection optical system PL may be either an equal magnification system or an enlargement system. Further, the optical element (lens) 60 is exposed from the lens barrel PK on the front end side (substrate P side) of the projection optical system PL of the present embodiment. This optical element 60 is detachably (replaceable) with respect to the lens barrel PK.

  The substrate stage PST supports the substrate P, and includes a Z stage 51 that holds the substrate P via a substrate holder, an XY stage 52 that supports the Z stage 51, and a base 53 that supports the XY stage 52. It has. The substrate stage PST is driven by a substrate stage driving device PSTD such as a linear motor. The substrate stage driving device PSTD is controlled by the control device CONT. By driving the Z stage 51, the position (focus position) of the substrate P held by the Z stage 51 in the Z-axis direction and the positions in the θX and θY directions are controlled. Further, by driving the XY stage 52, the position of the substrate P in the XY direction (position in a direction substantially parallel to the image plane of the projection optical system PL) is controlled. That is, the Z stage 51 controls the focus position and the tilt angle of the substrate P to adjust the surface of the substrate P to the image plane of the projection optical system PL by the autofocus method and the auto leveling method. Is positioned in the X-axis direction and the Y-axis direction. Needless to say, the Z stage and the XY stage may be provided integrally.

  On the substrate stage PST (Z stage 51), a movable mirror 54 that moves with respect to the projection optical system PL together with the substrate stage PST is provided. A laser interferometer 55 is provided at a position facing the movable mirror 54. The two-dimensional position and rotation angle of the substrate P on the substrate stage PST are measured in real time by the laser interferometer 55, and the measurement result is output to the control device CONT. The control device CONT positions the substrate P supported by the substrate stage PST by driving the substrate stage driving device PSTD based on the measurement result of the laser interferometer 55.

  In the present embodiment, the immersion method is applied to improve the resolution by substantially shortening the exposure wavelength and to substantially increase the depth of focus. Therefore, at least while the pattern image of the mask M is transferred (projected) onto the substrate P, the front surface (lower surface) of the optical element (lens) 60 on the surface of the substrate P and the substrate P side of the projection optical system PL. 7 is filled with a predetermined liquid 50. As described above, the lens 60 is exposed at the front end side of the projection optical system PL, and the liquid 50 is supplied by a supply nozzle described later so as to contact only the lens 60. Thereby, corrosion etc. of the lens barrel PK made of metal are prevented. In the present embodiment, pure water is used for the liquid 50. Pure water is not only ArF excimer laser light but also far ultraviolet light such as ultraviolet emission lines (g-line, h-line, i-line) and KrF excimer laser light (wavelength 248 nm) emitted from the mercury lamp as exposure light EL. In the case of light (DUV light), the exposure light EL can be transmitted.

  The exposure apparatus EX collects the liquid 50 in the space 56 and the liquid supply apparatus 1 that supplies a predetermined liquid 50 to the space 56 between the front end surface 7 (the front end surface of the lens 60) of the projection optical system PL and the substrate P. And a liquid recovery apparatus 2 for performing the above operation. The liquid supply apparatus 1 is for filling at least a part between the projection optical system PL and the substrate P with the liquid 50, and includes a tank for storing the liquid 50, a pressure pump, and the like. One end of a supply pipe 3 is connected to the liquid supply apparatus 1, and a supply nozzle 4 is connected to the other end of the supply pipe 3. The liquid supply apparatus 1 supplies the liquid 50 to the space 56 via the supply pipe 3 and the supply nozzle 4.

  The liquid recovery apparatus 2 includes a suction pump, a tank for storing the recovered liquid 50, and the like. One end of a recovery pipe 6 is connected to the liquid recovery apparatus 2, and a recovery nozzle 5 is connected to the other end of the recovery pipe 6. The liquid recovery apparatus 2 recovers the liquid 50 in the space 56 via the recovery nozzle 5 and the recovery pipe 6. When filling the space 50 with the liquid 50, the control device CONT drives the liquid supply device 1 to supply a predetermined amount of the liquid 50 per unit time to the space 56 via the supply pipe 3 and the supply nozzle 4. The recovery device 2 is driven, and a predetermined amount of liquid 50 per unit time is recovered from the space 56 via the recovery nozzle 5 and the recovery pipe 6. Thereby, the liquid 50 is held in the space 56 between the front end surface 7 of the projection optical system PL and the substrate P.

  FIG. 2 is a partially enlarged view of FIG. 1 showing the lower part of the projection optical system PL of the exposure apparatus EX, the liquid supply apparatus 1, the liquid recovery apparatus 2, and the like. In FIG. 2, the lens 60 at the lowest end of the projection optical system PL is formed in a rectangular shape elongated in the Y-axis direction (non-scanning direction), leaving only the portion where the tip 60A is necessary in the scanning direction. At the time of scanning exposure, a part of the pattern image of the mask M is projected onto the rectangular projection area directly under the tip 60A, and the mask M is at the velocity V in the −X direction (or + X direction) with respect to the projection optical system PL. In synchronization with the movement, the substrate P moves in the + X direction (or -X direction) at the speed β · V (β is the projection magnification) via the XY stage 52. Then, after the exposure of one shot area is completed, the next shot area is moved to the scanning start position by stepping the substrate P, and thereafter, the exposure process for each shot area is sequentially performed by the step-and-scan method. In the present embodiment, the liquid 50 is set to flow in the same direction as the movement direction of the substrate P in parallel with the movement direction of the substrate P.

  FIG. 3 shows the tip 60A of the lens 60 of the projection optical system PL, the supply nozzle 4 (4A-4C) for supplying the liquid 50 in the X-axis direction, and the recovery nozzle 5 (5A, 5B) for recovering the liquid 50. It is a figure which shows these positional relationships. In FIG. 3, the shape of the tip 60A of the lens 60 is a rectangular shape elongated in the Y-axis direction, and is 3 on the + X direction side so as to sandwich the tip 60A of the lens 60 of the projection optical system PL in the X-axis direction. Two supply nozzles 4A to 4C are arranged, and two recovery nozzles 5A and 5B are arranged on the −X direction side. The supply nozzles 4 </ b> A to 4 </ b> C are connected to the liquid supply apparatus 1 via the supply pipe 3, and the recovery nozzles 5 </ b> A and 5 </ b> B are connected to the liquid recovery apparatus 2 via the recovery pipe 4. Further, the supply nozzles 8A to 8C and the recovery nozzles 9A and 9B are arranged at positions where the supply nozzles 4A to 4C and the recovery nozzles 5A and 5B are rotated by approximately 180 ° with respect to the center of the tip end portion 60A. Supply nozzles 4A to 4C and recovery nozzles 9A and 9B are alternately arranged in the Y-axis direction, supply nozzles 8A to 8C and recovery nozzles 5A and 5B are alternately arranged in the Y-axis direction, and supply nozzles 8A to 8C are The recovery nozzles 9 </ b> A and 9 </ b> B are connected to the liquid recovery apparatus 2 via the recovery pipe 11. The supply of the liquid from the nozzle needs to be performed so that no gas portion is generated between the projection optical system PL and the substrate P.

  FIG. 4 is a configuration diagram of the liquid supply apparatus 1. As shown in FIG. 4, the liquid supply device 1 includes a deaeration device 21 as a bubble suppression device that suppresses the generation of bubbles in the liquid 50. The deaeration device 21 shown in FIG. 4 includes a heating device that heats the liquid 50. Here, in the present embodiment, the liquid 50 is circulated between the liquid supply apparatus 1 and the liquid recovery apparatus 2, and the liquid 50 from the liquid recovery apparatus 2 is supplied to the liquid supply apparatus via the circulation pipe 12. It is set back to 1. The liquid supply apparatus 1 is provided with a pressurizing pump 15 that sends liquid to the upstream side thereof.

  In order to prevent contamination of the substrate P and the projection optical system PL, or to prevent the pattern image projected on the substrate P from being deteriorated, the liquid supply device 1 is, for example, the liquid 50 recovered by the liquid recovery device 2. The filter 20 for removing foreign matter and the like in the liquid 50 recovered by the liquid recovery device 2 and the heating device 21 for heating the liquid 50 that has passed through the filter 20 to a predetermined temperature (for example, 90 ° C.) And a temperature adjusting device 22 that adjusts the temperature of the liquid 50 heated by the heating device 21 to a desired temperature. Although not shown in FIG. 4, the liquid supply apparatus 1 includes a container such as a tank that can hold a predetermined amount of the liquid 50. Here, the temperature adjustment device 22 provided in the liquid supply device 1 sets the temperature of the liquid 50 supplied to the space 56 to the same level as the temperature (for example, 23 ° C.) in the chamber in which the exposure apparatus EX is accommodated. Set to. Supply pipes 3 and 10 are connected to the temperature adjusting device 22, and the liquid 50 whose temperature has been adjusted by the temperature adjusting device 22 is supplied to the space 56 by the pressurizing pump 15 through the supply pipe 3 (10).

  The heating device 21 stores the liquid 50 inside a storage device such as a tank and heats the liquid 50 by heating the storage device, and the storage device constitutes a part of the exhaust device. An exhaust pipe 13 is connected. The operation of the heating device 21 is controlled by the control device CONT. The heating device 21 removes (degass) the gas dissolved in the liquid 50 from the liquid 50 by heating the liquid 50 to a predetermined temperature. The extracted gas component is discharged from the exhaust pipe 13 to the outside of the apparatus. The liquid 50 is degassed by the heating device 21, thereby suppressing generation of bubbles. The heating device 21, for example, wraps an electric heater around a stainless steel container capable of holding the liquid 50 and controls the temperature of the electric heater, or a stainless steel helical tube in a temperature-controlled high temperature liquid. It is possible to adopt a method such as a method in which the liquid 50 is flowed into the spiral tube.

  Here, the heating device 21 sets the temperature of the liquid 50 to 30 ° C. or more and 100 ° C. or less. That is, the liquid 50 is heated at a temperature higher than the temperature set by the temperature adjusting device 22 (for example, 23 ° C., which is the temperature in the chamber), and below the boiling point of the liquid. The heating device 21 deaerates by heating the liquid 50 in the above temperature range, and suppresses the generation of bubbles in the liquid 50 supplied to the space 56. In particular, the heating device 21 can be sufficiently degassed by heating the liquid 50 to its boiling point.

  Since the liquid 50 is preferably set to a temperature higher than the temperature in the chamber (space 56) and lower than the boiling point in the heating device 21, when the liquid 50 is a liquid other than water, the heating device 21 Heat to a temperature corresponding to the boiling point.

  Next, a procedure for exposing the pattern of the mask M onto the substrate P using the above-described exposure apparatus EX will be described.

  After the mask M is loaded on the mask stage MST and the substrate P is loaded on the substrate stage PST, the control device CONT drives the liquid supply device 1 and starts the liquid supply operation to the space 56. In the liquid supply device 1, the liquid 50 is supplied to the heating device 21 in a state where foreign matters and the like are removed by passing through the filter 20. The liquid 50 supplied to the heating device 21 is heated to a predetermined temperature. The liquid 50 is degassed by being heated to a predetermined temperature by the heating device 21. The removed gas component is discharged to the outside of the apparatus through an exhaust pipe 13 constituting a part of the exhaust apparatus. The degassed liquid 50 is supplied to the temperature adjusting device 22, for example, adjusted to a temperature substantially equal to the temperature in the chamber, and then supplied to the space 56 via the supply pipe 3 and the supply nozzle 4. Here, the flow path of the liquid 50 such as the pipe 14 connecting the heating apparatus 21 and the temperature adjustment apparatus 22, the temperature adjustment apparatus 22, and the supply pipe 3 is sealed, and the liquid 50 sufficiently fills this flow path. It flows in the state. That is, the liquid 50 flowing through this flow path is supplied to the space 56 without contact with gas. Further, the inner wall surface (contact surface with the liquid) such as the supply pipe 3 that forms a flow path from the heating device 21 to the space 56 is hydrophilic, and the flow path from the heating device 21 to the space 56 is hydrophilic. This suppresses the generation of bubbles in the liquid. In that case, for example, an electropolished stainless steel pipe may be used as the supply pipe 3. Note that the degassed liquid 50 may be stored in a storage container or pipe that does not contact the gas, and supplied to the space 56 at a desired timing. In this case, in addition to the heating device 21, the flow path, the storage container, or the pipe also functions as a part of the bubble suppression device.

  When scanning exposure is performed by moving the substrate P in the scanning direction (−X direction) indicated by the arrow Xa (see FIG. 3), the supply pipe 3, the supply nozzles 4A to 4C, the recovery pipe 4, and the recovery nozzle The liquid 50 is supplied and recovered by the liquid supply device 1 and the liquid recovery device 2 using 5A and 5B. That is, when the substrate P moves in the −X direction, the liquid 50 in which the generation of bubbles from the liquid supply apparatus 1 is suppressed via the supply pipe 3 and the supply nozzles 4 (4A to 4C) and the projection optical system PL. In addition to being supplied between the substrate P and the recovery nozzle 5 (5A, 5B) and the recovery pipe 6, the liquid 50 is recovered by the liquid recovery device 2 so that the space between the lens 60 and the substrate P is filled. The liquid 50 flows in the −X direction. On the other hand, when scanning exposure is performed by moving the substrate P in the scanning direction (+ X direction) indicated by the arrow Xb, the supply pipe 10, the supply nozzles 8A to 8C, the recovery pipe 11, and the recovery nozzles 9A and 9B are used. The liquid supply device 1 and the liquid recovery device 2 supply and recover the liquid 50. That is, when the substrate P moves in the + X direction, the liquid 50 deaerated from the liquid supply apparatus 1 via the supply pipe 10 and the supply nozzles 8 (8A to 8C) is exchanged between the projection optical system PL and the substrate P. The liquid 50 is recovered to the liquid recovery device 2 through the recovery nozzle 9 (9A, 9B) and the recovery pipe 11, and is supplied in the + X direction so as to fill between the lens 60 and the substrate P. 50 flows. Thus, the control device CONT uses the liquid supply device 1 and the liquid recovery device 2 to flow the liquid 50 along the moving direction of the substrate P. In this case, for example, the liquid 50 supplied from the liquid supply apparatus 1 via the supply nozzle 4 flows so as to be drawn into the space 56 as the substrate P moves in the −X direction. Even if the energy is small, the liquid 50 can be easily supplied to the space 56. Then, by switching the flow direction of the liquid 50 according to the scanning direction, the substrate P is scanned between the front end surface 7 of the lens 60 and the substrate P in either the + X direction or the −X direction. Can be filled with the liquid 50, and high resolution and a wide depth of focus can be obtained.

  As described above, the exposure apparatus, particularly the liquid supply apparatus 1 that supplies the liquid 50 between the projection optical system PL and the substrate P, is provided with the heating device 21 that heats the liquid 50. The liquid 50 can be supplied between the projection optical system PL and the substrate P after sufficiently deaerated. Accordingly, it is possible to suppress the generation of bubbles in the liquid 50 filled between the projection optical system PL and the substrate P during the exposure process. Further, even if bubbles are generated for some reason in the flow path between the heating device (deaeration device) 21 and the space 56, the tip surface 7 of the projection optical system PL, or the surface of the substrate P, it is sufficient. When the liquid 50 deaerated by the air flows in the flow path or the space 56, the liquid 50 can absorb and remove bubbles existing in the flow path. Further, since the liquid 50 supplied to the space 56 between the projection optical system PL and the substrate P comes into contact with the surrounding gas (air), the surrounding gas (air) may be dissolved in the liquid 50. However, since it takes several minutes for the gas (air) to dissolve in the liquid 50, the liquid 50 supplied from the liquid supply apparatus 1 is transferred to the liquid recovery apparatus 2 before losing its degassed properties. Collected. Therefore, bubbles are not generated in the liquid 50 between the projection optical system PL and the substrate P due to the dissolution of the gas (air) in the liquid 50 in the space 56. As described above, since the exposure process can be performed in the state where no bubbles are present in the liquid 50 on the optical path of the exposure light EL, the deterioration of the pattern image caused by the bubbles can be prevented, and a device having high pattern accuracy can be manufactured. . The heating device 21 may not be provided in the liquid supply device 1 but may be provided at a location away from the liquid supply device 1 or may be provided inside or outside the exposure apparatus chamber.

  Further, since the liquid 50 is supplied to the space 56 in a state in which the temperature is adjusted by the temperature adjusting device 22, the temperature of the surface of the substrate P is adjusted, alignment accuracy due to thermal expansion of the substrate P due to heat generated during exposure, and the like. Can be prevented.

  As described above, pure water is used as the liquid 50 in the present embodiment. Pure water has an advantage that it can be easily obtained in large quantities at a semiconductor manufacturing factory or the like, and has no adverse effect on the photoresist, optical element (lens), etc. on the substrate P. In addition, pure water has no adverse effects on the environment, and since the impurity content is extremely low, it can be expected to clean the surface of the substrate P and the surface of the optical element provided on the front end surface of the projection optical system PL. .

  The refractive index n of pure water (water) with respect to the exposure light EL having a wavelength of about 193 nm is said to be about 1.44 to 1.47, and ArF excimer laser light (wavelength 193 nm) is used as the light source of the exposure light EL. Is used, the wavelength is shortened to 1 / n, that is, about 131 to 134 nm on the substrate P, and a high resolution can be obtained. Furthermore, since the depth of focus is expanded to about n times, that is, about 1.44 to 1.47 times compared with that in the air, if it is sufficient to ensure the same depth of focus as that used in the air. The numerical aperture of the projection optical system PL can be further increased, and the resolution is improved in this respect as well.

  In the present embodiment, the lens 60 is attached to the tip of the projection optical system PL. However, as an optical element attached to the tip of the projection optical system PL, optical characteristics of the projection optical system PL, such as aberration (spherical aberration, coma aberration) Etc.) may be used. Alternatively, it may be a plane parallel plate that can transmit the exposure light EL. By making the optical element in contact with the liquid 50 into a plane parallel plate that is cheaper than the lens, the transmittance of the projection optical system PL, the exposure light EL on the substrate P, when the exposure apparatus EX is transported, assembled, adjusted, etc. Even if a substance (for example, silicon-based organic matter) that reduces the illuminance of the light and the illuminance distribution adheres to the parallel plane plate, it is only necessary to replace the parallel plane plate immediately before supplying the liquid 50. There is an advantage that the replacement cost is lower than in the case where the optical element in contact with 50 is a lens. That is, the surface of the optical element that comes into contact with the liquid 50 is contaminated due to scattering particles generated from the resist by exposure to the exposure light EL, or adhesion of impurities in the liquid 50, and the optical element is periodically replaced. Although it is necessary, by making this optical element an inexpensive parallel flat plate, the cost of replacement parts is lower than that of lenses and the time required for replacement can be shortened, resulting in an increase in maintenance costs (running costs). And a decrease in throughput.

  Further, when the pressure between the optical element at the tip of the projection optical system PL generated by the flow of the liquid 50 and the substrate P is large, the optical element is not exchangeable but the optical element is moved by the pressure. It may be fixed firmly so that there is no.

  In the present embodiment, the space between the projection optical system PL and the surface of the substrate P is filled with the liquid 50. For example, the liquid is obtained with a cover glass made of a plane-parallel plate attached to the surface of the substrate P. 50 may be sufficient.

In addition, although the liquid 50 of this embodiment is water, liquids other than water may be sufficient. For example, when the light source of the exposure light EL is an F ₂ laser, the F ₂ laser light does not transmit water. Therefore, as the liquid 50, for example, fluorine oil (fluorine-based liquid that can transmit F ₂ laser light). ) Or perfluorinated polyether (PFPE). In addition, as the liquid 50, the liquid 50 is transmissive to the exposure light EL, has a refractive index as high as possible, and is stable with respect to the photoresist applied to the projection optical system PL and the surface of the substrate P (for example, Cedar). Oil) can also be used.

Second Embodiment Next, a second embodiment of the exposure apparatus EX of the present invention will be described with reference to FIG. Here, in the following description, the same or equivalent components as those in the above-described embodiment are denoted by the same reference numerals, and the description thereof is simplified or omitted. A characteristic part according to this embodiment is that a decompression device 23 is provided instead of the heating device 21.

  As shown in FIG. 5, the liquid supply apparatus 1 is, for example, a liquid recovery apparatus in order to prevent contamination of the substrate P and the projection optical system PL, or to prevent deterioration of a pattern image projected on the substrate P. 2, filtering the liquid 50 collected in 2 to remove foreign matter in the liquid 50, and a pressure reducing device 23 for degassing the liquid 50 by depressurizing the liquid 50 from which foreign matter has been removed by the filter 20; A temperature adjusting device 22 and a pressurizing pump 25 are provided for adjusting the liquid 50 deaerated by the decompression device 23 to substantially the same temperature as the temperature in the chamber. The decompression device 23 has a container for holding the liquid 50, and degass the liquid 50 by decompressing the inside of the container. Thus, the liquid 50 can be degassed by reducing the pressure instead of heating the liquid 50. The decompression device 50 can be constituted by, for example, a container that can hold a predetermined amount of the liquid 50 and a vacuum pump that is connected to the container and decompresses the pressure of the gas in contact with the liquid 50 in the container.

  In addition, in order to deaerate the liquid 50, you may perform the heat processing with respect to the liquid 50, and a pressure reduction process simultaneously. In other words, the decompression device 23 having a container capable of holding the liquid 50 can be provided with a heating device for heating the container. The decompression device 23 accommodates the liquid 50 in a container, and the liquid 50 can be degassed by heating the liquid 50 using the heating device while decompressing the container.

  At this time, the decompression device 23 sets the pressure according to the temperature of the liquid 50. That is, the liquid 50 can be sufficiently degassed by being heated to the boiling point. However, since the boiling point of the liquid 50 depends on the pressure, the liquid 50 is made efficient by setting the pressure according to the temperature of the liquid 50. Good and good degassing. For example, the pressure (boiling pressure) when the boiling point of water as the liquid 50 is 100 ° C. is atmospheric pressure (101325 Pa). The boiling pressure when the boiling point is 90 ° C. is 70121 Pa. Similarly, the boiling pressure is 47377 Pa at a boiling point of 80 ° C., the boiling pressure is 12345 Pa at a boiling point of 50 ° C., the boiling pressure is 4244.9 Pa at a boiling point of 30 ° C., and the boiling pressure is 2338.1 Pa at a boiling point of 20 ° C. Therefore, when the temperature of the liquid 50 is set to 100 ° C., for example, by a heating device, the decompression device 23 can degas by boiling the liquid 50 under atmospheric pressure without performing decompression processing. On the other hand, when the temperature of the liquid 50 is 90 ° C., the decompression device 23 sets the pressure in the range of atmospheric pressure to a boiling pressure (70121 Pa) at a temperature of 90 ° C., thereby boiling the liquid 50 and deaeration. it can. Similarly, for example, when the temperature of the liquid 50 is 30 ° C., the decompression device 23 can deaerate the liquid 50 by boiling it by setting the pressure from atmospheric pressure to boiling pressure (4244.9 Pa). Thus, since the boiling point of the liquid 50 varies depending on the pressure, the decompression device 23 can degas the liquid 50 satisfactorily by setting the pressure according to the temperature of the liquid 50.

Note that the deaeration level of the liquid 50 supplied between the projection optical system PL and the substrate P, that is, the dissolved gas concentration of the liquid 50 may be determined according to the use conditions (exposure conditions, etc.) of the liquid 50. In the case of immersion exposure, the temperature of the liquid 50 between the projection optical system PL and the substrate P is entirely increased during the exposure by the irradiation of the exposure light EL or by the heat of the substrate P heated by the irradiation of the exposure light EL. Or rise partially. The temperature rise of the liquid 50 varies depending on the intensity of the exposure light EL and is about several degrees C. (1 to 3 ° C.). However, if the degassing level of the liquid 50 is low, the temperature rise of the liquid 50 causes the liquid 50 to enter The dissolved gas may be generated as bubbles. Therefore, it is necessary to set the deaeration level of the liquid 50 so that no bubbles are generated even if the temperature of the liquid 50 rises between the projection optical system PL and the substrate P. For example, as described above, when a liquid whose temperature is controlled to about 23 ° C. is supplied between the projection optical system PL and the substrate P, for example, the temperature of the liquid increases to 30 ° C. in anticipation of safety. The deaeration level may be set so that no bubbles are generated. Specifically, the liquid 50, i.e. the degassing level of water, in terms of the air dissolved saturation amount of water at 30 ℃ 0.016cm ³ / cm ³ or less (mass ratio, _{N 2} is 13ppm or less, _{O 2} 7 .8 ppm or less). Incidentally, ^"cm 3 / cm ^3" indicates the volume cm ³ of air dissolved in water 1 cm ^3.

  In the case of immersion exposure, when a flow occurs in the liquid 50 between the projection optical system PL and the substrate P, a pressure change of the liquid 50 occurs. The pressure change varies depending on the supply amount of the liquid, the recovery amount, the moving speed of the substrate P, etc., and is about several hundred Pa (100 to 300 Pa), but if the degassing level of the liquid 50 is low, the pressure change with respect to the liquid 50 Therefore, bubbles may be generated in the liquid 50. Therefore, the deaeration level of the liquid 50 may be set so that bubbles are not generated even when the pressure of the liquid 50 changes by several hundred Pa.

  Further, when it is difficult to increase the deaeration level, the exposure conditions may be determined so as not to cause a temperature change or pressure change that generates bubbles in the liquid between the projection optical system PL and the substrate P. The exposure conditions include at least one of a liquid supply amount, a recovery amount, a moving speed of the substrate P, exposure light intensity, exposure pulse light emission period (pulse interval), and exposure pulse light pulse width. When the exposure conditions are determined in consideration of the temperature change and pressure change of the liquid, not only the generation of bubbles but also the prevention of pattern image formation deterioration due to the change in the refractive index of the liquid is determined. Needless to say, there is a need.

Third Embodiment A third embodiment of the exposure apparatus EX of the present invention will be described with reference to FIGS. The exposure apparatus of this embodiment includes a film deaeration device 24 and a heating device 25 as shown in FIG. 6 instead of the heating device in the liquid supply device in the first embodiment. In the following description, the same or equivalent components as those of the above-described embodiment are denoted by the same reference numerals, and the description thereof is simplified or omitted.

  FIG. 6 is a configuration diagram of the liquid supply apparatus 1. As shown in FIG. 6, the liquid supply apparatus 1 is, for example, a liquid recovery apparatus in order to prevent contamination of the substrate P and the projection optical system PL, or to prevent deterioration of a pattern image projected on the substrate P. The filter 50 for filtering the liquid 50 collected in 2 to remove foreign matters and the like in the liquid 50 collected by the liquid recovery apparatus 2 and heating for heating the liquid 50 that has passed through the filter 20 to a predetermined temperature The temperature adjustment which adjusts the temperature of the apparatus 25, the film | membrane deaeration apparatus 24 which removes the gas in the liquid 50 heated by the heating apparatus 25, and the liquid 50 deaerated by the film | membrane deaeration apparatus 24 to desired temperature A device 22 and a pressurizing pump 15 are provided. The liquid 50 whose dissolved gas concentration is reduced by the heating device 25 is supplied to the membrane degassing device 24 through the pipe 12. Further, the liquid 50 deaerated by the membrane deaerator 24 is supplied to the temperature controller 22 via the pipe 14. The membrane deaerator 24 is connected to the exhaust pipe 13, and the gas removed (degassed) from the liquid 50 is discharged. In addition, the temperature adjustment device 22 sets the temperature of the liquid 50 supplied to the space 56 to, for example, the same level as the temperature (for example, 23 ° C.) in the chamber in which the exposure apparatus EX is accommodated. Supply pipes 3, 10 are connected to the temperature adjusting device 22, and the liquid 50 whose temperature has been adjusted by the temperature adjusting device 22 is supplied to the space 56 by the pressurizing pump 15 via the supply pipe 3 (10). It has become. The operation of the membrane deaerator 24 is also controlled by the controller CONT.

  FIG. 7 is a cross-sectional view showing a schematic configuration of the membrane deaerator 24. A cylindrical hollow fiber bundle 72 is accommodated inside the housing 71 via a predetermined space 73. The hollow fiber bundle 72 is formed by bundling a plurality of straw-shaped hollow fiber membranes 74 in parallel, and each hollow fiber membrane 74 is a material having high hydrophobicity and excellent gas permeability (for example, poly 4 methylpentene 1). It is formed with. Vacuum cap members 75 a and 75 b are fixed to both ends of the housing 71, and sealed spaces 76 a and 76 b are formed outside both ends of the housing 71. The vacuum cap members 75a and 75b are provided with deaeration ports 77a and 77b connected to a vacuum pump (not shown). Further, at both ends of the housing 71, sealing portions 78a and 78b are formed so that only both ends of the hollow fiber bundle 72 are connected to the sealed spaces 76a and 76b, and are connected to the deaeration ports 77a and 77b. The inside of each hollow fiber membrane 74 can be decompressed by a vacuum pump. A tube 79 connected to the tube 12 is disposed inside the hollow fiber bundle 72. The tube 79 is provided with a plurality of liquid supply holes 80, and the liquid 50 is supplied from the liquid supply hole 80 to the space 81 surrounded by the sealing portions 78 a and 78 b and the hollow fiber bundle 72. When the supply of the liquid 50 from the liquid supply hole 80 to the space 81 is continued, the liquid 50 flows outward so as to cross the layers of the hollow fiber membranes 74 bundled in parallel, and the liquid 50 flows to the outer surface of the hollow fiber membrane 74. Contact with. As described above, since the hollow fiber membranes 74 are each formed of a material having high hydrophobicity and excellent gas permeability, the liquid 50 does not enter the inside of the hollow fiber membranes 74, and does not enter between the hollow fiber membranes 74. And moves to a space 73 outside the hollow fiber bundle 72. On the other hand, the gas (molecules) dissolved in the liquid 50 moves (is absorbed) to the inside of each hollow fiber membrane 74 because the inside of the hollow fiber membrane 74 is in a reduced pressure state (about 20 Torr). . As described above, the gas component removed (degassed) from the liquid 50 while traversing the layer of the hollow fiber membrane 74 is desorbed from both ends of the hollow fiber bundle 72 through the sealed spaces 76a and 76b as indicated by arrows 83. It is discharged from the air ports 77a and 77b. The degassed liquid 50 is supplied from the liquid outlet 82 provided in the housing 51 to the temperature adjusting device 22 through the pipe 14.

  As described above, since the liquid supply device 1 that supplies the liquid 50 between the projection optical system PL and the substrate P is provided with the film degassing device 24 that removes (degass) the gas in the liquid 50, The liquid 50 can be supplied between the projection optical system PL and the substrate P after sufficiently degassing the liquid 50. Accordingly, it is possible to suppress the generation of bubbles in the liquid 50 filled between the projection optical system PL and the substrate P during the exposure process. Further, even if bubbles are generated for some reason in the flow path between the membrane degassing device 24 and the space 56, the front end surface 7 of the projection optical system PL, or the surface of the substrate P, sufficient degassing is performed. When the liquid 50 thus flowed flows through the flow path or the space 56, the liquid 50 can absorb and remove bubbles present in the flow path. As described above, since the exposure process can be performed in the state where no bubbles are present in the liquid 50 on the optical path of the exposure light EL, the deterioration of the pattern image caused by the bubbles can be prevented, and a device having high pattern accuracy can be manufactured. .

  In the present embodiment, the liquid is heated by the heating device 25 to lower the dissolved gas concentration, and then the liquid is supplied to the membrane degassing device 24 so that the deaeration level of the liquid supplied to the space 56 is improved. However, the liquid may be supplied to the membrane deaerator 24 after the dissolved gas concentration is lowered using a decompression device instead of the heating device 25. In addition, when the deaeration capability of the membrane deaerator 24 is sufficiently high, the liquid that has passed through the filter 20 may be guided to the membrane deaerator 24 without using a heating device or a decompressor.

  In each of the above embodiments, the shape of the nozzle described above is not particularly limited. For example, the liquid 50 may be supplied or recovered with two pairs of nozzles on the long side of the tip portion 60A. In this case, the supply nozzle and the recovery nozzle may be arranged side by side so that the liquid 50 can be supplied and recovered from either the + X direction or the −X direction. .

In addition, as shown in FIG. 8, supply nozzles 31 and 32 and recovery nozzles 33 and 34 may be provided on both sides in the Y-axis direction with the front end 60 </ b> A interposed therebetween. By this supply nozzle and recovery nozzle, the liquid 50 is stably supplied between the projection optical system PL and the substrate P even when the substrate P is moved in the non-scanning direction (Y-axis direction) during the step movement. be able to.
Further, in the above-described embodiment, the projection optical system PL and the substrate are not brought into contact with the liquid from which the gas has been removed by the gas removing device (the heating device 21, the decompression device 23, and the film degassing device 24). The gas is supplied to the space 56 between the P and the gas, but if gas removal is sufficiently performed and it is known that the amount of gas dissolved in the liquid is small, the gas is touched in some or all of the flow paths. You may do it. That is, it is not an essential configuration for suppressing bubbles to prevent the liquid from being touched between the gas removal device and the space 56.

Moreover, in the above-mentioned embodiment, although it is a mechanism which returns the liquid collect | recovered with the liquid collection | recovery apparatus 2 to the liquid supply apparatus 1, it does not necessarily need to send new pure water to the liquid supply apparatus 1, The liquid recovered by the liquid recovery apparatus 2 may be discarded.
In the above-described embodiment, the case where the liquid immersion region is formed on the image plane side of the projection optical system PL when the substrate P is exposed has been described. However, not only when the substrate P is exposed, but also the substrate stage PST ( Even when various measurement members and measurement sensors provided on the Z stage 51) are used, a liquid may be disposed on the image plane side of the projection optical system PL and various measurements may be performed via the liquid. . Even when such measurement is performed, measurement errors caused by bubbles can be prevented by suppressing the generation of bubbles in the liquid as described above.
Further, the liquid supply device and the liquid recovery device in the above-described embodiment have the supply nozzle and the recovery nozzle on both sides of the projection region of the projection optical system PL, and one side of the projection region according to the scanning direction of the substrate P. However, the configuration of the liquid supply device and the liquid recovery device is not limited to this, and the liquid is locally supplied between the projection optical system PL and the substrate P. It only needs to be retained.

  The substrate P in each of the above embodiments is not only a semiconductor wafer for manufacturing a semiconductor device, but also a glass substrate for a display device, a ceramic wafer for a thin film magnetic head, or an original mask or reticle used in an exposure apparatus. (Synthetic quartz, silicon wafer) or the like is applied.

  In the above-described embodiment, an exposure apparatus that locally fills the space between the projection optical system PL and the substrate P with a liquid is adopted. However, the stage holding the substrate to be exposed is moved in the liquid tank. The present invention can also be applied to an immersion exposure apparatus to be used or an immersion exposure apparatus in which a liquid tank having a predetermined depth is formed on a stage and a substrate is held therein. The structure and exposure operation of an immersion exposure apparatus for moving a stage holding a substrate to be exposed in a liquid tank are described in detail in, for example, Japanese Patent Laid-Open No. 6-124873, and a predetermined depth on the stage. The structure and exposure operation of an immersion exposure apparatus that forms a liquid tank and holds a substrate therein are described in detail in, for example, Japanese Patent Application Laid-Open No. 10-303114, each designated or selected in this international application. To the extent permitted by applicable national legislation, this is part of the text.

  As the exposure apparatus EX, in addition to the step-and-scan type scanning exposure apparatus (scanning stepper) that scans and exposes the pattern of the mask M by moving the mask M and the substrate P synchronously, the mask M and the substrate P Can be applied to a step-and-repeat type projection exposure apparatus (stepper) in which the pattern of the mask M is collectively exposed while the substrate P is stationary and the substrate P is sequentially moved stepwise. The present invention can also be applied to a step-and-stitch type exposure apparatus that partially transfers at least two patterns on the substrate P.

  The present invention can also be applied to a twin stage type exposure apparatus. The structure and exposure operation of a twin stage type exposure apparatus are described in, for example, Japanese Patent Laid-Open Nos. 10-163099 and 10-214783 (corresponding US Pat. Nos. 6,341,007, 6,400,441, 6,549,269). No. 6,590,634), JP 2000-505958 (corresponding US Pat. No. 5,969,441) or US Pat. No. 6,208,407, each designated or selected in this international application. To the extent permitted by applicable national legislation, this is part of the text.

  The type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern on the substrate P, but an exposure apparatus for manufacturing a liquid crystal display element or a display, a thin film magnetic head, an image sensor (CCD). ) Or an exposure apparatus or the like for manufacturing a reticle or a mask.

  When a linear motor is used for the substrate stage PST and the mask stage MST, either an air levitation type using an air bearing or a magnetic levitation type using a Lorentz force or a reactance force may be used. Each stage PST, MST may be a type that moves along a guide, or may be a guideless type that does not have a guide. Examples using a linear motor for the stage are disclosed in US Pat. Nos. 5,623,853 and 5,528,118, respectively, to the extent permitted by national legislation designated or selected in this international application. As part of the description.

  As a driving mechanism for each stage PST, MST, a planar motor that drives each stage PST, MST by electromagnetic force with a magnet unit having a two-dimensionally arranged magnet and an armature unit having a two-dimensionally arranged coil facing each other is provided. It may be used. In this case, either one of the magnet unit and the armature unit may be connected to the stages PST and MST, and the other of the magnet unit and the armature unit may be provided on the moving surface side of the stages PST and MST.

  The reaction force generated by the movement of the substrate stage PST may be released mechanically to the floor (ground) using a frame member so as not to be transmitted to the projection optical system PL. This reaction force processing method is disclosed in detail, for example, in JP-A-8-166475 (US Pat. No. 5,528,118), as long as it is permitted by the laws of the country designated or selected in this international application. In the text.

  The reaction force generated by the movement of the mask stage MST may be released mechanically to the floor (ground) using a frame member so as not to be transmitted to the projection optical system PL. This reaction force processing method is disclosed in detail, for example, in JP-A-8-330224 (US Pat. No. 5,874,820), as long as it is permitted by the laws of the country designated or selected in this international application. In the text.

  As described above, the exposure apparatus EX according to the present embodiment maintains various mechanical subsystems including the respective constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Manufactured by assembling. To ensure these various accuracies, before and after this assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection, and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  As shown in FIG. 9, a microdevice such as a semiconductor device includes a step 201 for designing a function / performance of the microdevice, a step 202 for producing a mask (reticle) based on the design step, and a substrate as a base material of the device. Manufacturing step 203, exposure processing step 204 for exposing the mask pattern onto the substrate by the exposure apparatus EX of the above-described embodiment, device assembly step (including dicing process, bonding process, packaging process) 205, inspection step 206, etc. It is manufactured after.

It is a schematic block diagram which shows one Embodiment of the exposure apparatus of this invention. It is a figure which shows the positional relationship of the front-end | tip part of a projection optical system, a liquid supply apparatus, and a liquid collection | recovery apparatus. It is a figure which shows the example of arrangement | positioning of a supply nozzle and a collection | recovery nozzle. It is a schematic block diagram which shows one Embodiment of a liquid supply apparatus. It is a schematic block diagram which shows other embodiment of a liquid supply apparatus. It is a schematic block diagram which shows further another embodiment of a liquid supply apparatus. It is sectional drawing which shows schematic structure of a membrane deaeration apparatus. It is a figure which shows the example of arrangement | positioning of a supply nozzle and a collection | recovery nozzle. It is a flowchart figure which shows an example of the manufacturing process of a semiconductor device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Liquid supply apparatus, 2 ... Liquid recovery apparatus, 21 ... Heating apparatus (bubble suppression apparatus, deaeration apparatus),
23 ... Depressurization device (bubble suppression device, deaeration device), 50 ... Liquid, EX ... Exposure device,
PL ... projection optical system, P ... substrate

Claims (27)

An exposure apparatus that projects an image of a predetermined pattern onto a substrate through a liquid and exposes the substrate with exposure light,
A projection optical system that projects an image of the predetermined pattern onto a substrate;
A liquid supply apparatus for supplying a liquid via a supply pipe between the projection optical system and the substrate;
A liquid recovery apparatus that recovers the supplied liquid and forms a liquid immersion region through which the exposure light passes in a part of the substrate in cooperation with the liquid supply apparatus;
A gas component contained in the liquid connected to the supply pipe and flowing from the liquid supply device to the liquid recovery device to form the liquid immersion region is removed prior to the formation of the liquid immersion region. An exposure apparatus comprising: a gas removing device;   The exposure apparatus according to claim 1, wherein the gas removing apparatus removes a gas component from the liquid so that an air concentration in the liquid becomes 0.016 cm 3 / cm 3 or less.   The exposure apparatus according to claim 1, wherein the gas removing device is at least one of a heating device, a decompression device, and a degassing film.   The liquid supply apparatus includes a plurality of supply nozzles for supplying a liquid between the projection optical system and the substrate, and a plurality of recovery nozzles for recovering the liquid supplied between the projection optical system and the substrate. 2. The exposure apparatus according to 1.   The exposure apparatus includes a stage on which the substrate is moved, and exposure is performed while the stage moves the substrate with respect to the image projected from the projection optical system, and the supply nozzle supplies the liquid to the substrate. The exposure apparatus according to claim 4, wherein the exposure apparatus sprays in a moving direction.   The exposure apparatus according to claim 4, wherein the supply nozzle and the recovery nozzle are alternately arranged.   The exposure apparatus according to claim 6, wherein the combination of the supply nozzles and the recovery nozzles arranged alternately are opposed to each other with a projection region of the projection optical system interposed therebetween.   Furthermore, the exposure apparatus as described in any one of Claims 1-4 provided with the temperature adjustment apparatus for adjusting the temperature of the liquid supplied from the said liquid supply apparatus.   The exposure apparatus according to claim 8, wherein the temperature adjusting device adjusts the temperature of the liquid so as to become a temperature in the exposure apparatus.   The exposure apparatus according to claim 9, wherein the temperature of the substrate is controlled by supplying the temperature-adjusted liquid between the projection optical system and the substrate. An exposure apparatus that projects an image of a pattern onto a substrate by a projection optical system and exposes the substrate,
A liquid supply device for supplying a liquid between the projection optical system and the substrate;
A liquid recovery apparatus that recovers the supplied liquid and forms an immersion area in a part of the substrate in cooperation with the liquid supply apparatus;
An exposure apparatus, comprising: a bubble suppression device that is provided in the liquid supply device and that flows from the liquid supply device to the liquid recovery device and suppresses generation of bubbles in the liquid that forms the liquid immersion region.   The exposure apparatus according to claim 11, wherein the bubble suppression device includes a deaeration device that removes a gas in the liquid.   The exposure apparatus according to claim 12, wherein the deaeration device includes a heating device that heats the liquid.   The exposure apparatus according to claim 13, wherein the heating device sets a temperature T of the liquid to 30 ° C. <T ≦ 100 ° C.   The exposure apparatus according to claim 12, wherein the deaeration device includes a decompression device that decompresses the interior of the device in which the liquid is held.   The exposure apparatus according to claim 15, wherein the decompression device sets a pressure according to a temperature of the liquid.   17. The deaeration device according to claim 12, wherein the deaeration device determines a deaeration level so that bubbles do not occur due to a temperature change of at least a part of the liquid between the projection optical system and the substrate. Exposure equipment.   The exposure apparatus according to any one of claims 12 to 16, wherein the deaeration apparatus determines a deaeration level so that bubbles are not generated by a pressure change with respect to the liquid between the projection optical system and the substrate.   The exposure apparatus according to claim 12, wherein the deaerator is a film deaerator.   The exposure apparatus according to claim 19, wherein the membrane deaerator includes a hollow fiber member.   21. The exposure apparatus according to claim 20, wherein the hollow fiber member is gas permeable and liquid impermeable.   The exposure apparatus according to claim 19, further comprising a heating device that heats a liquid supplied to the film deaerator and reduces a dissolved concentration of a gas in the liquid supplied to the film deaerator.   The exposure according to any one of claims 11 to 22, wherein the liquid whose bubble generation is suppressed by the bubble suppression device is supplied between the projection optical system and the substrate without contact with the gas. apparatus.   The exposure apparatus according to claim 12, wherein the liquid supply apparatus includes a filter device that filters liquid supplied between the projection optical system and the substrate.   25. The exposure apparatus according to claim 24, wherein the liquid supply apparatus further includes a temperature adjustment device that adjusts a temperature of the liquid deaerated by the deaeration device.   13. The exposure apparatus according to claim 12, wherein the liquid supply device further includes a temperature adjustment device that adjusts the temperature of the liquid deaerated by the deaeration device.   A device manufacturing method for manufacturing a device using the exposure apparatus according to any one of claims 1 to 26.

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