JP4701606B2 - Exposure method, exposure apparatus, and device manufacturing method - Google Patents

Exposure method, exposure apparatus, and device manufacturing method Download PDF

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JP4701606B2
JP4701606B2 JP2003398923A JP2003398923A JP4701606B2 JP 4701606 B2 JP4701606 B2 JP 4701606B2 JP 2003398923 A JP2003398923 A JP 2003398923A JP 2003398923 A JP2003398923 A JP 2003398923A JP 4701606 B2 JP4701606 B2 JP 4701606B2
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exposure
substrate
region
optical system
pattern
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JP2005026649A (en
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壮一 大和
直行 小林
正洋 根井
茂 蛭川
伸貴 馬込
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株式会社ニコン
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70341Immersion
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70425Imaging strategies, e.g. for increasing throughput, printing product fields larger than the image field, compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching, double patterning
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70425Imaging strategies, e.g. for increasing throughput, printing product fields larger than the image field, compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching, double patterning
    • G03F7/70466Multiple exposures, e.g. combination of fine and coarse exposures, double patterning, multiple exposures for printing a single feature, mix-and-match
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/708Construction of apparatus, e.g. environment, hygiene aspects or materials
    • G03F7/70991Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus, shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate, utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids, vacuum

Description

  The present invention relates to an exposure method for exposing a pattern to a substrate through a projection optical system in a state where an image plane side of the projection optical system is locally filled with a liquid, and a device manufacturing method using this exposure method.

Semiconductor devices and liquid crystal display devices are manufactured by a so-called photolithography technique in which a pattern formed on a mask is transferred onto a photosensitive substrate. An exposure apparatus used in this photolithography process has a mask stage for supporting a mask and a substrate stage for supporting a substrate, and a mask pattern is transferred via a projection optical system while sequentially moving the mask stage and the substrate stage. It is transferred to the substrate. In recent years, in order to cope with higher integration of device patterns, higher resolution of the projection optical system is desired. The resolution of the projection optical system becomes higher as the exposure wavelength used becomes shorter and the numerical aperture of the projection optical system becomes larger. Therefore, the exposure wavelength used in the exposure apparatus is shortened year by year, and the numerical aperture of the projection optical system is also increasing. The mainstream exposure wavelength is 248 nm of the KrF excimer laser, but the 193 nm of the shorter wavelength ArF excimer laser is also being put into practical use. Also, when performing exposure, the depth of focus (DOF) is important as well as the resolution. The resolution R and the depth of focus δ are each expressed by the following equations.
R = k 1 · λ / NA (1)
δ = ± k 2 · λ / NA 2 (2)
Here, λ is the exposure wavelength, NA is the numerical aperture of the projection optical system, and k 1 and k 2 are process coefficients. From the equations (1) and (2), it can be seen that the depth of focus δ becomes narrower when the exposure wavelength λ is shortened and the numerical aperture NA is increased in order to increase the resolution R.

If the depth of focus δ becomes too narrow, it becomes difficult to match the substrate surface with the image plane of the projection optical system, and the margin during the exposure operation may be insufficient. Therefore, as a method for substantially shortening the exposure wavelength and increasing the depth of focus, for example, a liquid immersion method disclosed in Patent Document 1 below has been proposed. In this immersion method, the space between the lower surface of the projection optical system and the substrate surface is filled with a liquid such as water or an organic solvent, and the wavelength of the exposure light in the liquid is 1 / n (n is the refractive index of the liquid). The resolution is improved by utilizing the fact that the ratio is usually about 1.2 to 1.6), and the depth of focus is expanded about n times.
International Publication No. 99/49504 Pamphlet

  By the way, the above-described prior art has the following problems. The above prior art has a configuration in which the space between the lower surface, which is the image plane side of the projection optical system, and the substrate (wafer) is locally filled with liquid, and a liquid substrate is used when exposing a shot region near the center of the substrate. There is no outflow to the outside. However, for example, as shown in the schematic diagram of FIG. 15, when the peripheral region (edge region) E of the substrate P is moved to the projection region 100 of the projection optical system and the edge region E of the substrate P is to be exposed, The liquid flows out of the substrate P. If the spilled liquid is left unattended, the environment (humidity, etc.) where the substrate P is placed will change, and the optical path of the interferometer that measures the positional information of the substrate stage that holds the substrate and various optical detections There is a possibility that a desired pattern transfer accuracy cannot be obtained, for example, causing a change in the refractive index on the optical path of the detection light of the apparatus. In addition, the liquid that has flowed out also causes inconvenience such as rusting of machine parts around the substrate stage that supports the substrate P.

  The present invention has been made in view of such circumstances, and even when immersion exposure processing is performed on a substrate in a state where the liquid is filled between the projection optical system and the substrate, the liquid to the outside of the substrate can be removed. To provide an exposure method capable of preventing outflow, an exposure method capable of pattern transfer to the edge region of the substrate even when the substrate is subjected to immersion exposure processing, an exposure apparatus, and a device manufacturing method using these exposure methods and apparatuses. Objective.

In order to solve the above-described problems, the present invention adopts the following configuration corresponding to FIGS. 1 to 14 shown in the embodiment.
The exposure method of the present invention is an exposure method in which a substrate (P) is exposed through a projection optical system (PL), supplying a liquid (50) between the projection optical system (PL) and the substrate (P), A first region (AR1) on the substrate (P) is exposed through the projection optical system (PL) and the liquid (50), and a second region (P1) on the substrate (P) different from the first region (AR1) ( AR2) is exposed through the projection optical system (PL) without the liquid (50). In the exposure method of the present invention, the liquid (50) is supplied between the projection optical system (PL) and the substrate (P), and the substrate (P) is passed through the projection optical system (PL) and the liquid (50). In the exposure method of exposing, when exposing the first area (AR1) on the substrate (P) and when exposing the second area (AR2) on the substrate (P) different from the first area (AR1) The exposure conditions are different. The device manufacturing method of the present invention is characterized by using the exposure method described above.

  According to the present invention, for example, when the pattern formation region near the center of the substrate is the first region and the region near the edge of the substrate is the second region, the projection optical system can be used without liquid (no liquid supplied) in the second region. Through the exposure, the outflow of the liquid to the outside of the substrate can be suppressed. Then, by exposing each of the first and second regions under different exposure conditions, the pattern can be satisfactorily transferred to the second region. Therefore, fluctuations in the environment in which the substrate is placed can be suppressed, and inconveniences such as rusting can be suppressed in the mechanical parts around the substrate stage that supports the substrate. In addition, in the CMP (Chemical Mechanical Polishing) process, which is a subsequent process, it is possible to suppress the occurrence of inconvenience that the substrate cannot be satisfactorily polished by hitting the polishing surface of the CMP, so that the device has high pattern accuracy. Can be manufactured.

  The exposure method of the present invention supplies the liquid (50) to at least a part between the projection optical system (PL) and the substrate (P), and the substrate via the projection optical system (PL) and the liquid (50). In the exposure method for exposing (P), the edge portion (AR2) on the substrate (P) is not exposed.

According to the present invention, since the edge portion of the substrate is not exposed, that is, only the region excluding the edge portion where the liquid flows out to the outside of the substrate is exposed, inconvenience associated with the outflow of liquid to the outside of the substrate can be avoided. .
Under the condition that the edge portion of the substrate does not need to be exposed, it is not necessary to move the edge of the substrate to the liquid immersion region between the projection optical system and the liquid. For example, if it is a process condition in which CMP processing is not performed on the substrate, it is not necessary to form a pattern on the edge portion, so there is no need to expose the edge portion, and the liquid immersion area between the projection optical system and the substrate Can prevent the liquid from flowing out to the outside of the substrate.

  An exposure apparatus (EX) of the present invention is an exposure apparatus that exposes a plurality of areas (AR1, AR2) on a substrate (P), and provides exposure light (EL) to a first area (AR1) on the substrate (P). A first optical system (IL, PL) for irradiation and a second optical system (IL2, IL2) for irradiating exposure light (EL2) to a second region (AR2) on a substrate (P) different from the first region (AR1). PL2). The device manufacturing method of the present invention uses the above-described exposure apparatus (EX).

  According to the present invention, it is possible to easily expose each of the first and second regions on the substrate under different conditions. Further, depending on the arrangement of the first optical system and the second optical system, the first and second regions on the substrate can be exposed in parallel by the first and second optical systems. Can be improved. Further, since the first and second optical systems may be constructed according to the target exposure accuracy (pattern formation accuracy) when exposing the first and second regions, for example, the exposure accuracy for the second region is relatively rough. When high accuracy is allowed, the second optical system can be made simple (inexpensive), and the apparatus cost and running cost can be suppressed.

  The exposure apparatus (EX) of the present invention includes a liquid supply apparatus (1), a first station (A) where the substrate is exposed through the liquid supplied by the liquid supply apparatus, and a substrate to which no liquid is supplied. And a second station (B) to be exposed.

In this exposure apparatus, since immersion exposure is performed at the first station and exposure without using a normal liquid is performed at the second station, for example, the substrate has first and second regions, and the first region is the first region. The first area can be exposed through the liquid and the second area can be exposed at the second station without the liquid. Therefore, by performing control according to the exposure conditions separately at the two stations, complicated exposure control according to the application is also possible. In addition, it is sufficient that the liquid (water) processing problem associated with immersion exposure is processed in one station.
Further, according to the present invention, the second station can previously perform substrate alignment measurement (AF / AL measurement, alignment measurement, etc.), move the substrate to the first station, and perform the alignment measurement. The performed substrate can be subjected to immersion exposure at the first station. Thus, the throughput can be improved by taking advantage of the twin stage in immersion exposure.

  According to the present invention, it is possible to manufacture a device that can satisfactorily transfer a pattern to an edge region of a substrate while suppressing the outflow of liquid to the outside of the substrate, and exhibit desired performance.

The exposure method and device manufacturing method of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic block diagram showing an embodiment of an exposure apparatus used in the exposure method of the present invention.
In FIG. 1, an exposure apparatus EX includes a mask stage MST that supports a mask M, a substrate stage PST that supports a substrate P, and an illumination optical system IL that illuminates the mask M supported by the mask stage MST with exposure light EL. A projection optical system PL that projects and exposes an image of the pattern of the mask M illuminated by the exposure light EL onto the substrate P supported by the substrate stage PST, and a control device CONT that controls the overall operation of the exposure apparatus EX. It has.

  Here, in the present embodiment, as the exposure apparatus EX, scanning exposure is performed in which the pattern formed on the mask M is exposed to the substrate P while the mask M and the substrate P are synchronously moved in different directions (reverse directions) in the scanning direction. A case where an apparatus (so-called scanning stepper) is used will be described as an example. In the following description, the direction that coincides with the optical axis AX of the projection optical system PL is the Z-axis direction, the synchronous movement direction (scanning direction) between the mask M and the substrate P in the plane perpendicular to the Z-axis direction is the X-axis direction, A direction (non-scanning direction) perpendicular to the Z-axis direction and the Y-axis direction is defined as a Y-axis direction. Further, the directions around the X axis, the Y axis, and the Z axis are defined as θX, θY, and θZ directions, respectively. Here, the “substrate” includes a semiconductor wafer coated with a resist, and the “mask” includes a reticle on which a device pattern to be reduced and projected on the substrate is formed.

The illumination optical system IL illuminates the mask M supported by the mask stage MST with the exposure light EL, and the exposure light source, an optical integrator that equalizes the illuminance of the light beam emitted from the exposure light source, and an optical integrator A condenser lens that collects the exposure light EL from the light source, a relay lens system, a variable field stop that sets the illumination area on the mask M by the exposure light EL in a slit shape, and the like. A predetermined illumination area on the mask M is illuminated with the exposure light EL having a uniform illuminance distribution by the illumination optical system IL. As the exposure light EL emitted from the illumination optical system IL, for example, far ultraviolet light (g-line, h-line, i-line) and KrF excimer laser light (wavelength 248 nm) emitted from a mercury lamp, DUV light), vacuum ultraviolet light (VUV light) such as ArF excimer laser light (wavelength 193 nm) and F 2 laser light (wavelength 157 nm), or the like is used. In this embodiment, ArF excimer laser light is used.

  The mask stage MST supports the mask M, and can move two-dimensionally in a plane perpendicular to the optical axis AX of the projection optical system PL, that is, in the XY plane, and can be slightly rotated in the θZ direction. The mask stage MST is driven by a mask stage driving device MSTD such as a linear motor. The mask stage driving device MSTD is controlled by the control device CONT. The two-dimensional position and rotation angle of the mask M on the mask stage MST are measured in real time by the laser interferometer, and the measurement result is output to the control device CONT. The control device CONT drives the mask stage driving device MSTD based on the measurement result of the laser interferometer, thereby positioning the mask M supported on the mask stage MST.

  The projection optical system PL projects and exposes the pattern of the mask M onto the substrate P at a predetermined projection magnification β, and is composed of a plurality of optical elements (lenses). These optical elements are mirrors as metal members. It is supported by the cylinder PK. In the present embodiment, the projection optical system PL is a reduction system having a projection magnification β of, for example, 1/4 or 1/5. Note that the projection optical system PL may be either an equal magnification system or an enlargement system. Further, the optical element (lens) 60 is exposed from the lens barrel PK on the front end side (substrate P side) of the projection optical system PL of the present embodiment. This optical element 60 is detachably (replaceable) with respect to the lens barrel PK.

  The substrate stage PST supports the substrate P, and includes a Z stage 51 that holds the substrate P via a substrate holder, an XY stage 52 that supports the Z stage 51, and a base 53 that supports the XY stage 52. It has. The substrate stage PST is driven by a substrate stage driving device PSTD such as a linear motor. The substrate stage driving device PSTD is controlled by the control device CONT. By driving the Z stage 51, the position (focus position) of the substrate P held by the Z stage 51 in the Z-axis direction and the positions in the θX and θY directions are controlled. Further, by driving the XY stage 52, the position of the substrate P in the XY direction (position in a direction substantially parallel to the image plane of the projection optical system PL) is controlled. That is, the Z stage 51 controls the focus position and the tilt angle of the substrate P to adjust the surface of the substrate P to the image plane of the projection optical system PL by the autofocus method and the auto leveling method. Is positioned in the X-axis direction and the Y-axis direction. Needless to say, the Z stage and the XY stage may be provided integrally.

  A movable mirror 54 is provided on the substrate stage PST (Z stage 51). A laser interferometer 55 is provided at a position facing the movable mirror 54. The two-dimensional position and rotation angle of the substrate P on the substrate stage PST are measured in real time by the laser interferometer 55, and the measurement result is output to the control device CONT. The control device CONT drives the substrate stage driving device PSTD based on the measurement result of the laser interferometer 55 to position the substrate P supported by the substrate stage PST.

  In the present embodiment, the immersion method is applied to improve the resolution by substantially shortening the exposure wavelength and to substantially increase the depth of focus. Therefore, at least during the transfer of the pattern image of the mask M onto the substrate P, the surface of the substrate P and the tip surface (lower surface) 7 of the optical element (lens) 60 on the substrate P side of the projection optical system PL. In the meantime, a predetermined liquid 50 is filled. As described above, the lens 60 is exposed at the front end side of the projection optical system PL, and the liquid 50 is configured to contact only the lens 60. Thereby, corrosion etc. of the lens barrel PK made of metal are prevented. Further, since the tip surface 7 of the lens 60 is sufficiently smaller than the lens barrel PK and the substrate P of the projection optical system PL, and the liquid 50 is configured to contact only the lens 60 as described above, the liquid 50 is projected. The optical system PL is locally filled on the image plane side. That is, the liquid immersion part between the projection optical system PL and the substrate P is sufficiently smaller than the substrate P. In the present embodiment, pure water is used for the liquid 50. Pure water is not only ArF laser light, but also far ultraviolet light such as ultraviolet emission lines (g-line, h-line, i-line) and KrF excimer laser light (wavelength 248 nm) emitted from exposure lamp EL from a mercury lamp, for example. In the case of (DUV light), the exposure light EL can be transmitted.

  The exposure apparatus EX collects the liquid 50 in the space 56 and the liquid supply apparatus 1 that supplies a predetermined liquid 50 to the space 56 between the front end surface 7 (the front end surface of the lens 60) of the projection optical system PL and the substrate P. And a liquid recovery apparatus 2 for performing the above operation. The liquid supply apparatus 1 is for locally filling the image plane side of the projection optical system PL with the liquid 50, and the temperature of the liquid 50 supplied to the tank for storing the liquid 50, the pressurizing pump, and the space 56. It is equipped with a temperature control device that adjusts the temperature. One end of a supply pipe 3 is connected to the liquid supply apparatus 1, and a supply nozzle 4 is connected to the other end of the supply pipe 3. The liquid supply apparatus 1 supplies the liquid 50 to the space 56 via the supply pipe 3 and the supply nozzle 4.

  The liquid recovery apparatus 2 includes a suction pump, a tank for storing the recovered liquid 50, and the like. One end of a recovery pipe 6 is connected to the liquid recovery apparatus 2, and a recovery nozzle 5 is connected to the other end of the recovery pipe 6. The liquid recovery apparatus 2 recovers the liquid 50 in the space 56 via the recovery nozzle 5 and the recovery pipe 6. When filling the space 50 with the liquid 50, the control device CONT drives the liquid supply device 1 to supply a predetermined amount of the liquid 50 per unit time to the space 56 via the supply pipe 3 and the supply nozzle 4. The recovery device 2 is driven, and a predetermined amount of liquid 50 per unit time is recovered from the space 56 via the recovery nozzle 5 and the recovery pipe 6. Thereby, the liquid 50 is arrange | positioned in the space 56 between the front end surface 7 of the projection optical system PL, and the board | substrate P, and a liquid immersion part is formed. Here, the control device CONT can arbitrarily set the liquid supply amount per unit time to the space 56 by controlling the liquid supply device 1 and can control the liquid recovery device 2 from above the substrate P. The amount of liquid recovered per unit time can be set arbitrarily.

  FIG. 2 is a front view showing the lower part of the projection optical system PL of the exposure apparatus EX, the liquid supply apparatus 1, the liquid recovery apparatus 2, and the like. In FIG. 2, the lens 60 at the lowest end of the projection optical system PL is formed in a rectangular shape elongated in the Y-axis direction (non-scanning direction), leaving only the portion where the tip 60A is necessary in the scanning direction. At the time of scanning exposure, a part of the pattern image of the mask M is projected onto the rectangular projection area directly under the tip 60A, and the mask M is at the velocity V in the −X direction (or + X direction) with respect to the projection optical system PL. In synchronization with the movement, the substrate P moves in the + X direction (or -X direction) at the speed β · V (β is the projection magnification) via the XY stage 52. Then, after the exposure of one shot area is completed, the next shot area is moved to the scanning start position by stepping the substrate P, and thereafter, the exposure process for each shot area is sequentially performed by the step-and-scan method. In the present embodiment, the liquid 50 is set to flow in the same direction as the movement direction of the substrate P along the movement direction of the substrate P.

  The Z stage 51 is provided with a suction hole 24 for sucking and holding the substrate P. Each of the suction holes 24 is connected to a flow path 25 formed inside the Z stage 51. The flow path 25 connected to the suction hole 24 is connected to one end of a conduit 30 provided outside the Z stage 51. On the other hand, the other end of the conduit 30 is connected to a pump 33 that is a suction device via a tank 31 and a valve 32 provided outside the Z stage 51. The tank 31 is provided with a discharge channel 31A so that a predetermined amount of liquid is discharged from the discharge channel 31A. When immersion exposure is performed, the liquid 50 that flows out of the substrate P may reach the back side of the substrate P. Then, there is a possibility that the liquid 50 that has entered the back side of the substrate P flows into the suction holes 24 for sucking and holding the substrate P. In this case, the suction hole 24 is connected to a pump 33 as a suction device via a flow path 25, a pipe line 30, and a tank 31, and in order to suck and hold the substrate P, the opening of the valve 32 and the pump 33. Therefore, the liquid 50 that has flowed into the adsorption hole 24 can be collected in the tank 31 via the flow path 25 and the pipe line 30.

  FIG. 3 shows the tip 60A of the lens 60 of the projection optical system PL, the supply nozzle 4 (4A-4C) for supplying the liquid 50 in the X-axis direction, and the recovery nozzle 5 (5A, 5B) for recovering the liquid 50. It is a figure which shows these positional relationships. In FIG. 3, the shape of the tip 60A of the lens 60 is a rectangular shape elongated in the Y-axis direction, and is 3 on the + X direction side so as to sandwich the tip 60A of the lens 60 of the projection optical system PL in the X-axis direction. Two supply nozzles 4A to 4C are arranged, and two recovery nozzles 5A and 5B are arranged on the −X direction side. The supply nozzles 4 </ b> A to 4 </ b> C are connected to the liquid supply apparatus 1 via the supply pipe 3, and the recovery nozzles 5 </ b> A and 5 </ b> B are connected to the liquid recovery apparatus 2 via the recovery pipe 4. Further, the supply nozzles 8A to 8C and the recovery nozzles 9A and 9B are arranged at positions where the supply nozzles 4A to 4C and the recovery nozzles 5A and 5B are rotated by approximately 180 ° with respect to the center of the tip portion 60A. Here, the nozzle rows 4A to 4C, 9A and 9B and the nozzle rows 8A to 8C, 5A and 5B are arranged to face each other, and an interval between the opposed supply nozzle and the recovery nozzle (for example, an interval between 4A and 8A). ) Is wider than the width in the scanning direction of the projection area defined under the tip 60A of the lens 60, but smaller than the diameter of the substrate P. Therefore, when exposing a shot region close to the outer periphery of the substrate P, the liquid immersion region protrudes outside the edge of the substrate P, and the opposed supply nozzles are arranged to prevent the liquid from leaking outside the substrate P. It is desirable that the distance from the collection nozzle is approximately the same as the width of the projection area in the scanning direction. Supply nozzles 4A to 4C and recovery nozzles 9A and 9B are alternately arranged in the Y-axis direction, supply nozzles 8A to 8C and recovery nozzles 5A and 5B are alternately arranged in the Y-axis direction, and supply nozzles 8A to 8C are The recovery nozzles 9 </ b> A and 9 </ b> B are connected to the liquid recovery apparatus 2 via the recovery pipe 11. The liquid supply from the nozzle is performed so that no gas portion is generated between the projection optical system PL and the substrate P.

  As shown in FIG. 4, supply nozzles 13 and 14 and recovery nozzles 15 and 16 may be provided on both sides in the Y-axis direction with the front end portion 60 </ b> A interposed therebetween. By this supply nozzle and recovery nozzle, the liquid 50 is stably supplied between the projection optical system PL and the substrate P even when the substrate P is moved in the non-scanning direction (Y-axis direction) during the step movement. be able to.

  In addition, the shape of the nozzle mentioned above is not specifically limited, For example, you may make it supply or collect | recover the liquid 50 with 2 pairs of nozzles about the long side of 60 A of front-end | tip parts. In this case, the supply nozzle and the recovery nozzle may be arranged side by side so that the liquid 50 can be supplied and recovered from either the + X direction or the −X direction. .

  FIG. 5 is a plan view of the mask M according to this embodiment. In FIG. 5, a mask M includes a first pattern formation region MA1 in which a device pattern (first pattern) 41 for forming a device is formed, and a line and space pattern (first pattern) in which line patterns are formed at a predetermined pitch. 2 pattern) 42 in which 2nd pattern) 42 was formed. The device pattern 41 is transferred to a first area AR1 on the substrate P, which will be described later, and the line and space pattern (L / S pattern) 42 is transferred to a second area AR2 on the substrate P different from the first area AR1. It is designed to be transcribed.

  FIG. 6 is a plan view of the substrate P. FIG. The device pattern 41 formed on the mask M is transferred to the first area AR1 which is a pattern formation area set near the center of the substantially circular substrate P, and the second area which is an area near the edge of the substrate P. The L / S pattern 42 formed on the mask M is transferred to AR2. Further, a plurality of shot areas SH are set in the first area AR1. Note that the boundary between the first area AR1 and the second area AR2 is not limited to that shown in FIG. 6, but may be determined according to the acceleration distance and deceleration distance before and after the scanning exposure of each shot area, the range of the immersion area, or the like.

Next, a procedure for exposing the pattern of the mask M onto the substrate P using the above-described exposure apparatus EX will be described.
When the mask M is loaded on the mask stage MST and the substrate P is loaded on the substrate stage PST, the control device CONT drives the liquid supply device 1 and the liquid recovery device 2 to supply and recover the liquid 50. A liquid immersion portion of the liquid 50 is formed in the space 56. The control device CONT illuminates the first pattern formation region M1 of the mask M with the exposure light EL by the illumination optical system IL while moving the mask M and the substrate P synchronously, and projects the image of the device pattern 41 into the projection optical system. Projection is sequentially performed on each shot area SH of the first area AR1 on the substrate P via the PL and the liquid 50. Here, while the first area AR1 near the center of the substrate P is being exposed, the liquid 50 supplied from the liquid supply device 1 is recovered by the liquid recovery device 2, and between the projection optical system PL and the substrate P. Since the liquid immersion area does not reach the edge of the substrate P, it does not flow out of the substrate P.

  Next, the control device CONT drives the mask stage MST and the substrate stage PST in order to expose the second area AR2 of the substrate P with the L / S pattern 42 provided at a position different from the device pattern 41 of the mask M. Then, the mask M and the substrate P are positioned at predetermined positions. Before or after the positioning operation, the control device CONT stops the supply and recovery operation of the liquid 50 by the liquid supply device 1 and the liquid recovery device 2. That is, the control device CONT prepares to expose the second area AR2 through the projection optical system PL without the liquid 50.

  Here, the control device CONT sets the illumination condition (exposure condition) of the exposure light EL for the mask M when the second area AR2 is subjected to the exposure process to a condition different from the condition when the first area AR1 is subjected to the exposure process. . For example, the diaphragm of the illumination optical system IL is changed, and the illumination condition for the mask M is changed from normal illumination to oblique incidence illumination (deformed illumination). Then, the control device CONT illuminates the L / S pattern 42 of the mask M obliquely with the exposure light EL, and exposes the substrate P using two diffracted lights among the plurality of diffracted lights diffracted by the L / S pattern 42. To do.

  FIG. 7 is a diagram showing an example of an optical system when exposing the second area AR2. In FIG. 7A, a one-pole illumination stop 71 having one opening at a position shifted from the optical axis is disposed downstream of the optical path of the light source 70 of the illumination optical system IL. The light beam emitted from the light source 70 passes through the opening of the unipolar illumination stop 71, then passes through the lens system 73, and is obliquely incident on the L / S pattern 42 of the mask M. Of the 0th order light and ± 1st order light diffracted by the L / S pattern 42 of the mask M, only the 0th order light and the + 1st order light (or -1st order light) enter the projection optical system PL. The second area AR2 of the substrate P is exposed to the L / S pattern 42 by the two-beam interference method based on the 0th order light and the + 1st order light (−1st order light). Alternatively, as shown in FIG. 7B, exposure can be performed using a bipolar illumination stop 72 having two openings at positions shifted from the optical axis. Alternatively, a quadrupole illumination stop having four openings may be used. The illumination condition may be changed not only by changing the aperture but also by using a zoom optical system or a diffractive optical element in combination.

  Exposure by the two-beam interference method increases the depth of focus. That is, the exposure condition based on the two-beam interference method is an exposure condition resistant to defocus, and the second area AR2 on the substrate P is exposed under an exposure condition resistant to defocus. Further, at this time, it is desirable to reduce the diffracted light of an unnecessary order by reducing the numerical aperture of the projection optical system PL so as not to reduce the depth of focus.

  Since the projection optical system PL of the exposure apparatus EX in the present embodiment is designed so that optimum imaging characteristics can be obtained by passing through the liquid 50, for example, exposure without passing through the liquid with normal illumination (circular stop). If the operation is performed, the focus position (the position of the image plane formed via the projection optical system PL) may be greatly displaced, and the pattern image may not be formed on the substrate P. However, when performing the exposure process without using a liquid, the exposure condition is changed to an exposure condition based on the two-beam interference method, and the exposure condition is resistant to defocusing. It can be kept within the depth of focus of the optical system PL.

  In some cases, the first area AR1 may be exposed under exposure conditions resistant to defocus such as oblique incidence illumination. In this case, the second exposure condition is simply changed from the exposure condition with liquid to the exposure condition without liquid. The area AR2 may be exposed.

  When exposing the L / S pattern 42 to the second area AR2 of the substrate P, the mask M (L / S pattern 42) and the substrate P may be exposed while being moved synchronously as in the exposure process for the first area AR1. The mask M and the substrate P may be exposed in a stationary state, or may be exposed while moving the substrate P while the mask M is stationary. For example, in FIG. 6, in the second area AR2, the area AR2A that is short in the scanning direction can be exposed while the mask M and the substrate P are stationary. Further, when exposing the area AR2B that is long in the scanning direction while moving the substrate P while the mask M is stationary, the projected pattern image is continuously blurred in the moving direction (scanning direction) of the substrate P. There is. In this case, the longitudinal direction of the line pattern of the L / S pattern 42 of the mask M and the moving direction of the substrate P should be matched in order to transfer the pattern satisfactorily to the area AR2B even if the pattern image is blurred. desirable. Further, when exposing the second area AR2, it is preferable to reduce the numerical aperture of the projection optical system PL. Thereby, even if unnecessary orders of diffracted light are incident on the projection optical system PL, it is possible to avoid a decrease in the contrast of the pattern image and a decrease in the focal depth.

  As described above, the edge region AR2 of the substrate P that is difficult to hold the liquid under the projection optical system PL (image surface side) is exposed without passing through the liquid. Can be prevented from flowing out to the outside of the substrate. In this case, since the optical characteristics of the projection optical system PL are optimized for immersion exposure, a desired imaging position cannot be obtained without using a liquid. By increasing the depth of focus using, the L / S pattern 42 can be formed on the substrate P without using a liquid. Then, by forming the L / S pattern 42, which is a dummy pattern, in the second region AR2 other than the first region AR1 where the device pattern 41 is formed on the substrate P, in the CMP process which is a subsequent process, It is possible to avoid the occurrence of inconvenience such that the substrate P comes into contact with the polishing surface.

  In the above-described embodiment, the second area AR2 is exposed without liquid. However, a recovery device that recovers the liquid flowing out of the substrate P is provided around the substrate P, and the second area AR2 is set in the second area AR2. Even during the exposure process, the exposure may be performed based on the two-beam interference method in a state where the liquid is disposed under the projection optical system PL or while the liquid is continuously supplied. In this case, since the liquid flows out of the substrate P, there is a possibility that the projection optical system PL and the substrate P are in an insufficient immersion state, but it is resistant to defocusing such as two-beam interference method. Since the second area AR2 is exposed under certain exposure conditions, an L / S pattern or the like can be formed in the second area AR2.

  In the above embodiment, the first area AR1 and the second area AR2 are distinguished by the shot area. However, the first area AR1 and the second area AR2 may be set in one shot area. For example, when two chip areas exist in one shot area, only one chip area close to the center of the substrate P is subjected to immersion exposure as the first area AR1, and the other chip area is defined as the second area AR2. Alternatively, exposure may be performed using a method that is resistant to defocusing, or processing such as no exposure may be performed. In this case, the first area AR1 and the second area AR2 may be arranged in the scanning direction or may be separated in the non-scanning direction.

  In the above embodiment, the second area AR2 is exposed after the first area AR1 is exposed. However, the exposure of the second area AR2 may be performed before the first area AR1. By performing the exposure of the first area AR1 after the exposure of the second area AR2 is completed, the formation accuracy of the device pattern 41 of the first area AR1 where high pattern formation accuracy is required can be further improved. That is, the photoresist after exposure light irradiation starts to deteriorate by being exposed to the outside air (air), but the first area AR1 is exposed by exposing the first area AR1 after exposing the second area AR2. It is possible to shorten the time from development to development processing, and to develop the first area AR1 where the device pattern 41 is exposed before the deterioration of the photoresist is promoted. Therefore, the device pattern 41 can be formed with a desired pattern formation accuracy.

  In the above embodiment, the L / S pattern 42 is provided on the mask M separately from the device pattern 41. However, the second area AR2 may be exposed using a part of the device pattern 41. Alternatively, a pattern used for exposure of the second area AR2 may be provided on another mask.

  Alternatively, as shown in FIG. 8, the glass substrate MF on which the L / S pattern 42 is formed is fixed so as to be juxtaposed with the mask M on the mask stage MST, and the L / S formed on the glass substrate MF is fixed. The image of the S pattern 42 may be projected onto the second area AR2 on the substrate P through an opening (not shown) of the mask stage MST to expose the second area AR2. In this case, since it is not necessary to perform a mask exchange operation for the exposure of the second area AR2, not only the throughput can be prevented, but also the L / S pattern for exposing the second area AR2 on the mask M. There is also an advantage that 42 need not be provided.

  Further, the pattern used when exposing the second area AR2 is not limited to the L / S pattern, and the fineness thereof may be the same as that of the device pattern 41, or a pattern that is coarser than the device pattern 41. Also good. In short, it is only necessary to form a pattern that does not cause a problem in performing the CMP process in the subsequent process.

  In the above embodiment, when the second area AR2 is exposed, the pattern is irradiated with illumination light and the image is projected onto the second area AR2. However, the pattern is not necessarily required. That is, two coherent light beams are crossed, an interference fringe is formed by the interference of the two light beams, and the interference fringe is projected onto the second area AR2 to form an interference fringe pattern in the second area AR2. It may be.

  FIG. 9 is a diagram showing another example of the optical system when exposing the second area AR2. In FIG. 9, a first lens system 81 including a collimator lens on the downstream side of a light source 80 capable of emitting coherent light such as laser light, and a half that splits a light beam that has passed through the first lens system 81 into two light beams. A mirror 82, a second lens system 83, and an aperture stop 85 are provided. The light beam emitted from the light source 80 passes through the first lens system 81, and then is split into two light beams by the half mirror 82. The two light beams enter the projection optical system PL via the second lens system 83. In the second area AR2 of the substrate P, an interference fringe pattern is formed by a two-beam interference method based on two light beams. Thus, it is possible to expose the second area AR2 without using the pattern (mask M). As the light source 80, a light source of the illumination optical system IL may be used, or a light source different from the illumination optical system IL may be used. Further, the interference fringe pitch can be changed by providing the half mirror 82 so as to be movable in the tilt direction and tilting the half mirror 82 to change the direction of the two light beams as indicated by a broken line 82 '. Alternatively, a slit member having two slit-like openings may be arranged on the optical path, and the interference fringe pattern may be formed by two light beams that have passed through each slit-like opening.

  In the above embodiment, the second area AR2 is exposed under exposure conditions that are resistant to defocus such as two-beam interference. However, when the second area AR2 is exposed, the second area AR2 is caused by the outflow of the liquid 50. The position of the Z stage 51 in the Z-axis direction may be adjusted in consideration of the image plane displacement to be performed. That is, the second area AR2 may be exposed at an interval different from the interval between the projection optical system PL and the substrate P when exposing the first area AR1. Further, instead of adjusting the position of the Z stage 51 in the Z-axis direction, the position of the image plane formed via the projection optical system PL may be adjusted. That is, even when the liquid between the projection optical system PL and the substrate P is not sufficient, the image plane position is adjusted so that the image plane is formed at substantially the same position in the Z-axis direction as when the first area AR1 is exposed. May be performed. This adjustment of the image plane position is achieved by adjusting the projection optical system PL, for example, by moving a part of the lenses to change the spherical aberration. The image plane position can also be adjusted by adjusting the wavelength of the exposure light EL or moving the mask M. It goes without saying that the position adjustment of the Z stage 51 and the image plane position adjustment may be used in combination.

  Further, the numerical aperture of the projection optical system PL when exposing the first area AR1 may be made smaller than that when exposing the second area AR2, without changing the illumination conditions as in the above embodiment.

  Further, the width of the line pattern formed in the second area AR2 and the width of the space between the line patterns may be adjusted by the exposure amount.

  In the above-described embodiment, the post-process such as the CMP process is stabilized by forming the pattern on the second area AR2 that is the edge area. However, under the process conditions in which the CMP process is not performed, the liquid process is performed. In the exposure process based on the immersion method, the edge area AR2 can be configured not to be exposed. Thereby, the outflow of the liquid to the outside of the substrate can be prevented.

  Note that the exposure apparatus EX of the present embodiment is a so-called scanning stepper. Therefore, when scanning exposure is performed by moving the substrate P in the scanning direction (-X direction) indicated by the arrow Xa (see FIG. 3), the supply pipe 3, the supply nozzles 4A to 4C, the recovery pipe 4, and the recovery nozzle The liquid 50 is supplied and recovered by the liquid supply device 1 and the liquid recovery device 2 using 5A and 5B. That is, when the substrate P moves in the −X direction, the liquid 50 is supplied between the projection optical system PL and the substrate P from the liquid supply device 1 via the supply pipe 3 and the supply nozzles 4 (4A to 4C). At the same time, the liquid 50 is recovered by the liquid recovery device 2 via the recovery nozzles 5 (5A, 5B) and the recovery pipe 6, and the liquid 50 is applied in the −X direction so as to fill between the lens 60 and the substrate P. Flowing. On the other hand, when scanning exposure is performed by moving the substrate P in the scanning direction (+ X direction) indicated by the arrow Xb, the supply pipe 10, the supply nozzles 8A to 8C, the recovery pipe 11, and the recovery nozzles 9A and 9B are used. The liquid supply device 1 and the liquid recovery device 2 supply and recover the liquid 50. That is, when the substrate P moves in the + X direction, the liquid 50 is supplied from the liquid supply device 1 between the projection optical system PL and the substrate P via the supply pipe 10 and the supply nozzles 8 (8A to 8C). At the same time, the liquid 50 is recovered by the liquid recovery apparatus 2 via the recovery nozzle 9 (9A, 9B) and the recovery pipe 11, and the liquid 50 flows in the + X direction so as to fill the space between the lens 60 and the substrate P. Thus, the control device CONT uses the liquid supply device 1 and the liquid recovery device 2 to flow the liquid 50 along the moving direction of the substrate P. In this case, for example, the liquid 50 supplied from the liquid supply apparatus 1 via the supply nozzle 4 flows so as to be drawn into the space 56 as the substrate P moves in the −X direction. Even if the energy is small, the liquid 50 can be easily supplied to the space 56. Then, by switching the flow direction of the liquid 50 according to the scanning direction, the substrate P is scanned between the front end surface 7 of the lens 60 and the substrate P in either the + X direction or the −X direction. Can be filled with the liquid 50, and high resolution and a wide depth of focus can be obtained.

Next, another embodiment of the present invention will be described. Here, in the following description, the same or equivalent components as those in the above-described embodiment are denoted by the same reference numerals, and the description thereof is simplified or omitted.
FIG. 10 is a schematic block diagram of a twin stage type exposure apparatus equipped with two stages for holding the substrate P. In FIG. 10, the twin stage type exposure apparatus has a first substrate stage (first movable body) PST1 and second substrate stage (second movable body) PST1 that can move independently on a common base 91 while holding the substrate P. Movable body) PST2 is provided. The twin stage type exposure apparatus has an exposure station A (immersion exposure station) and a measurement station B (normal exposure station). The exposure station A is equipped with the system described with reference to FIG. Then, the exposure light EL is irradiated onto the first region AR1 of the substrate P through the liquid 50 filled between the projection optical system (first optical system) PL and the substrate P and the projection optical system PL. For simplicity, the liquid supply device, the liquid recovery device, and the like are not shown in FIG. Further, in the vicinity of the mask stage MST of the exposure station A, the reference mark MFM provided on the reference members 94 and 94 ′ on the first and second substrate stages PST1 and PST2 via the mask M and the projection optical system PL. A mask alignment system 89 is provided for detecting. Further, the exposure station A is provided with a focus / leveling detection system 84 that detects surface information (position information and tilt information in the Z-axis direction) of the surface of the substrate P. The focus / leveling detection system 84 includes a projection system 84A that projects detection light onto the surface of the substrate P, and a light receiving system 84B that receives reflected light from the substrate P.

  On the other hand, the measurement station B is provided at a position conjugate with the substrate P supported by the substrate stage PST2 (PST1), and a glass substrate 95 on which a plurality of patterns including L / S patterns are formed, and a glass substrate 95. The pattern of the glass substrate 95 illuminated with the second illumination optical system (second optical system) IL2 that illuminates the exposure light EL2 on the pattern and the exposure light EL2 is projected onto the substrate P on the substrate stage PST2 (PST1). A substrate for detecting a second projection optical system (second optical system) PL2 and a reference mark PFM provided on an alignment mark on the substrate P or reference members 94, 94 ′ on the first and second substrate stages PST1, PST2. An alignment system 92 and a focus / leveling detection system 93 having a projection system 93A and a light receiving system 93B are provided. In the measurement station B, the exposure light EL2 is irradiated onto the second area AR2 of the substrate P without any liquid between the second projection optical system PL2 and the substrate P via the second projection optical system PL2.

  Here, the light source of the exposure light EL in the exposure station A and the light source of the exposure light EL2 in the measurement station B are different from each other, and the wavelength of the exposure light EL2 used for the exposure of the second area AR2 in the measurement station B is It differs from the wavelength of the exposure light EL used for exposure of the first area AR1 in the exposure station A.

  FIG. 11 is a plan view of the glass substrate 95. As shown in FIG. 11, the glass substrate 95 is a disc and has a plurality of patterns. In the example shown in FIG. 11, an L / S pattern 96 having a line pattern extending in the first direction (Y-axis direction), a dot pattern 97 having a large number of dots, and a first pattern orthogonal to the first direction. An L / S pattern 98 having a line pattern extending in the direction 2 (X-axis direction) and a block pattern 99 in which rectangular light-shielding patterns are provided in a zigzag pattern (checkered pattern) are composed of a glass substrate 95. Are provided at substantially equal intervals in the circumferential direction. The pattern shape is not limited to that shown in FIG. Further, the glass substrate 95 is rotatable in the θZ direction around the shaft portion 95A. Then, by rotating the glass substrate 95, one of the patterns 96 to 99 is arranged on the optical path of the exposure light EL2. In the example shown in FIG. 11, the L / S pattern 96 is arranged on the optical path of the exposure light EL2.

  The glass substrate 95 is not limited to a disc shape, and may be a plate member having a rectangular shape in plan view as shown in FIG. A plurality of patterns 96 to 99 arranged in a predetermined direction are formed on the rectangular glass substrate 95 '. This glass base material 95 ′ can be translated in the predetermined direction, and by moving in the predetermined direction, one of the plurality of patterns 96 to 99 on the glass base material 95 ′ becomes the exposure light EL2. It is arranged on the optical path.

  Reference members 94 and 94 ′ provided on the first and second substrate stages PST1 and PST2 respectively include a reference mark PFM detected by the substrate alignment system 92 and a reference mark MFM detected by the mask alignment system 89. Are provided in a predetermined positional relationship. Further, the surfaces of the reference members 94 and 94 'are substantially flat, and serve as a reference surface for the focus / leveling detection system. Further, the surfaces of the reference members 94 and 94 'are set to be almost the same height as the surface of the substrate P.

  As the configuration of the autofocus / leveling detection system, for example, the one disclosed in JP-A-8-37149 can be used. Further, as the configuration of the substrate alignment system 92, the one disclosed in JP-A-4-65603 can be used, and the configuration of the mask alignment system 89 is disclosed in JP-A-7-176468. Can be used.

Next, the operation of the twin stage type exposure apparatus having the above-described configuration will be described with reference to FIG.
During exposure via the liquid 50 in the first area AR1 on the substrate P held by the first substrate stage PST1 using the projection optical system PL at the exposure station A, the second station stage PST2 is measured at the measurement station B. The measurement processing of the substrate P and the exposure of the second area AR2 on the substrate P held by the second substrate stage PST2 using the second projection optical system PL2 are performed without using the liquid. In addition, the measurement process and the exposure process with respect to 2nd area | region AR2 are performed previously by the measurement station B with respect to the board | substrate P by which 1st area | region AR1 was exposed in the exposure station A. FIG.

  Here, in the measurement process at the measurement station B for the substrate P on the second substrate stage PST2, the measurement process without using the liquid is performed using the substrate alignment system 92, the focus / leveling detection system 93, and the reference member 94 ′. . The control device CONT moves the second substrate stage PST2 while monitoring the output of the laser interferometer that detects the position of the second substrate stage PST2 in the XY direction. In the middle of the movement, the substrate alignment system 92 detects a plurality of alignment marks (not shown) formed on the substrate P corresponding to the shot areas without passing through the liquid. When the substrate alignment system 92 detects the alignment mark, the second substrate stage PST2 is stopped. As a result, position information of each alignment mark in the coordinate system defined by the laser interferometer is measured, and this measurement result is stored in the control device CONT. However, if the substrate alignment system 92 can detect the alignment mark on the moving substrate P, the second substrate stage PST2 need not be stopped.

  Further, during the movement of the second substrate stage PST2, the surface information of the substrate P is detected by the focus / leveling detection system 93 without passing through the liquid. Detection of surface information by the focus / leveling detection system 93 is performed for every shot area on the substrate P, for example, and the detection result is stored in the control device CONT in correspondence with the position of the substrate P in the scanning direction (X-axis direction). Is done.

  When the detection of the alignment mark on the substrate P and the detection of the surface information on the substrate P are completed, the control device CONT moves the second substrate stage PST2 so that the detection region of the substrate alignment system 92 is positioned on the reference member 94 ′. Moving. The substrate alignment system 92 detects the reference mark PFM on the reference member 94 'and measures the position information of the reference mark PFM within the coordinate system defined by the laser interferometer.

  By completing the detection process of the reference mark PFM, the positional relationship between the reference mark PFM and the plurality of alignment marks on the substrate P, that is, the positional relationship between the reference mark PFM and the plurality of shot areas on the substrate P is obtained. That's right. Further, since the reference mark PFM of the reference member 94 ′ on the second substrate stage PST2 and the reference mark MFM on the reference member 94 ′ detected by the mask alignment system 89 of the exposure station A are in a predetermined positional relationship, The positional relationship between the reference mark MFM and the plurality of shot areas on the substrate P in the XY plane is determined. These positional relationships are also stored in the control device CONT.

  Further, before or after the detection of the reference mark PFM on the reference member 94 ′ by the substrate alignment system 92, the control device CONT detects the surface information of the surface (reference surface) of the reference member 94 ′ by the focus / leveling detection system 93. . With the completion of the detection process of the surface of the reference member 94 ', the relationship between the surface of the reference member 94' and the surface of the substrate P is obtained.

  When the measurement process without liquid is completed, the second projection optical system PL2 is used to perform the exposure process for the second area AR2 without liquid. When exposing the second area AR2 of the substrate P, one pattern among the plurality of patterns 96 to 99 of the glass substrate 95 is selected according to the device pattern 41 formed in the first area AR1, and the exposure light EL2 Arranged on the optical path. Specifically, a pattern used to expose the second area AR2 is selected based on the shape of the device pattern 41. For example, if the device pattern 41 is an L / S pattern extending in a predetermined direction, the pattern exposed to the second area AR2 is also an L / S pattern extending in the predetermined direction. If the device pattern 41 is a dot pattern, the pattern exposed to the second area AR2 is also a dot pattern. That is, a pattern similar to (or the same as) the pattern exposed in the first area AR1 is exposed in the second area AR2. Thereby, for example, in the CMP process, it is possible to prevent the inconvenience that the substrate P hits the CMP polished surface.

  Or based on the pattern formation density of the device pattern 41, you may select the pattern used in order to expose 2nd area | region AR2. Here, the pattern formation density is a ratio of a pattern formed per unit area on the substrate P, in other words, a ratio of an area irradiated with exposure light. For example, on the glass substrate 95, a plurality of L / S patterns having different ratios of line width and space width are provided, and according to the pattern formation density of the device pattern 41 formed in the first region AR1, By selecting one L / S pattern from a plurality of L / S patterns and exposing the second area AR2, it is possible to prevent the substrate P from hitting the CMP polished surface in the CMP process.

  When the exposure process on the first area AR1 on the substrate P held on the first substrate stage PST1, the measurement process on the substrate P held on the second substrate stage PST2 and the exposure process on the second area AR2 are finished, The first substrate stage PST1 moves to the measurement station B, and at the same time, the second substrate stage PST2 moves to the exposure station A, and an exchange operation between the first substrate stage PST1 and the second substrate stage PST2 is performed. Then, in the measurement station B, the substrate P that has been subjected to the exposure processing on the first substrate stage PST1 is unloaded and transported to the developing device, and the substrate P before the exposure processing is loaded onto the first substrate stage PST1, Measurement processing and exposure processing are performed on the substrate P.

  On the other hand, in the exposure station A, the second substrate stage PST2 is positioned so that the reference member 94 'of the second substrate stage PST2 faces the projection optical system PL. In this state, the control device CONT starts supplying the liquid 50 using the liquid supply device, fills the space between the projection optical system PL and the reference member 94 ′ with the liquid 50, and performs measurement processing via the liquid 50.

  That is, the control device CONT moves the second substrate stage PST2 so that the mask alignment system 89 can detect the reference mark MFM on the reference member 94 '. As a matter of course, in this state, the front end portion of the projection optical system PL and the reference member 94 'face each other. Here, the control device CONT starts supply and recovery of the liquid 50 by the liquid supply device and the liquid recovery device, and fills the space between the projection optical system PL and the reference member 94 'with the liquid.

  Next, the control device CONT detects the reference mark MFM through the mask M, the projection optical system PL, and the liquid 50 by the mask alignment system 89. As a result, the position of the mask M in the XY plane, that is, the projection position information of the pattern image of the mask M is detected using the reference mark MFM via the projection optical system PL and the liquid 50.

  Further, the control device CONT detects the surface (reference surface) of the reference member 94 ′ with the focus / leveling detection system 84 in a state where the liquid 50 is supplied between the projection optical system PL and the reference member 94 ′, and projects the projection. The relationship between the image plane formed through the optical system PL and the liquid 50 and the surface of the reference member 94 ′ is measured. As a result, the relationship between the image plane formed via the projection optical system PL and the liquid 50 and the surface of the substrate P is detected using the reference member 94 '.

  When the measurement process as described above is completed, the control device CONT temporarily stops driving the liquid supply device and the liquid recovery device, and then moves the second substrate stage SPT2 so that the projection optical system PL and the substrate P face each other. To do. Then, the control device CONT drives the liquid supply device and the liquid recovery device to form a liquid immersion portion between the projection optical system PL and the substrate P, and the second substrate stage PST2 exposed in the second area AR2. Exposure of the device pattern 41 to the first area AR1 of the upper substrate P is started. That is, scanning exposure for each shot region on the substrate P is started via the projection optical system PL and the liquid 50 using each information obtained during the above-described measurement processing. During scanning exposure for each shot area, information on the positional relationship between the reference mark PFM and each shot area obtained before the liquid 50 is supplied (position information on the shot area obtained by the measurement station B), and the liquid 50 Based on the projection position information of the pattern image of the mask M obtained using the reference mark MFM after the supply, each shot area on the substrate P and the mask M are aligned.

  Further, during the scanning exposure for each shot region, information on the relationship between the surface of the reference member 94 ′ and the surface of the substrate P obtained before the supply of the liquid 50 and the surface of the reference member 94 ′ obtained after the supply of the liquid 50 and the liquid 50 are obtained. The positional relationship between the surface of the substrate P and the image plane formed via the liquid 50 is adjusted without using the focus / leveling detection system 84 based on the information on the positional relationship with the image plane formed via the liquid crystal. Is done.

  It should be noted that the surface information on the surface of the substrate P may be detected using the focus / leveling detection system 84 during scanning exposure and used to check the adjustment result of the positional relationship between the surface of the substrate P and the image surface. Further, the surface information on the surface of the substrate P is detected using the focus / leveling detection system 84 during the scanning exposure, and the position information between the surface of the substrate P and the image surface is further added with the surface information detected during the scanning exposure. The relationship may be adjusted.

  In the above embodiment, the positional relationship between the surface of the substrate P and the image plane may be adjusted by moving the second substrate stage PST2 that holds the substrate P, and the mask M and the projection optical system PL are configured. The image plane may be adjusted to the surface of the substrate P by moving some of the plurality of lenses.

  Then, for the unprocessed substrate P loaded on the first substrate stage PST1 moved to the measurement station B, the measurement process using the reference member 94 and the second area AR2 not through the liquid are performed in the same manner as described above. Is subjected to the exposure process.

  As described above, the first optical system including the illumination optical system IL and the projection optical system PL that irradiates the exposure light EL to the first area AR1 of the substrate P, and the second area AR2 of the substrate P are exposed. Since the second optical system including the second illumination optical system IL2 that irradiates the light EL2 and the second projection optical system PL2 is provided, the exposure processing for each of the first and second regions AR1 and AR2 is performed in parallel. And the throughput of the exposure process can be improved.

  In the present embodiment, a plurality of patterns are provided on the glass substrate 95, and one of the plurality of patterns is selected according to the device pattern 41 to be formed in the first area AR1, and the glass substrate is selected. The material 95 is rotated and this pattern is exposed in the second area AR2 of the substrate P. Instead of the glass base material 95, a mask stage MST is provided in the measurement station B, and the substrate P is placed on the mask stage MST. A mask having a pattern for exposing the second area AR2 may be placed, and the pattern of this mask may be exposed to the second area AR2 of the substrate P using the exposure light EL2. Alternatively, the optical system described with reference to FIG. 9 or the like may be provided in the measurement station B without using a pattern, and the second area AR2 on the substrate P may be exposed by the two-beam interference method. In this case, it is preferable to drive the half mirror 82 in accordance with the device pattern 41 in the first area AR1 and perform exposure with an interference fringe pitch in accordance with the pattern formation density of the device pattern 41.

  In the present embodiment, exposure light having different wavelengths is used when the first area AR1 is exposed and when the second area AR2 is exposed. Since the second area AR2 is an edge portion of the substrate P and the pattern formation accuracy is allowed to be somewhat low, for example, when exposing the first area AR1, the second area AR2 is exposed using a short wavelength laser beam. In some cases, a light beam emitted from a mercury lamp or other light beam that can sensitize a photoresist may be used. Alternatively, the light beam emitted from the light source of the exposure light EL of the exposure station A is branched using, for example, an optical fiber and transmitted to the measurement station B, and the second region AR2 of the substrate P is exposed using this branched light. You can also. Further, since the second projection optical system PL2 is allowed even if the resolution is relatively low, the apparatus cost can be suppressed. However, it goes without saying that exposure light having the same wavelength may be used.

  In the present embodiment, the twin stage type exposure apparatus having two substrate stages has been described as an example. However, as shown in FIG. 13, the first area AR1 on the substrate P is exposed above one substrate stage PST. The projection optical system PL for irradiating the light EL and the second projection optical system PL2 for irradiating the second area AR2 with the exposure light EL2 may be provided. In this case, the exposure light EL and the exposure light EL2 may be emitted from different light sources, or may be emitted from the same light source. At the time of exposure, alignment processing is performed on the substrate P before exposure processing loaded on the substrate stage PST, and the second region AR2 on the substrate P without liquid is used by using the second projection optical system PL2. After the exposure to is completed, the first area AR1 is exposed through the projection optical system PL and the liquid 50.

  Further, the second optical system for exposing the second area AR2 on the substrate P does not need to be provided alongside the projection optical system (first optical system) PL. For example, a photoresist is applied to the substrate before the exposure process. The second optical system for exposing the second region AR2 on the substrate P is provided in the middle of the transport path between the coater / developer apparatus for developing the substrate after the exposure processing and the substrate stage PST of the exposure apparatus. An exposure processing unit may be provided. Thereby, the substrate P is developed on the substrate stage PST before or after the exposure process exposed through the projection optical system PL (immediately after the photoresist is applied by the coater or by the developer). Just before the second area AR2 can be exposed. Alternatively, the coater / developer apparatus may be provided with an exposure processing unit (second optical system) that exposes the second area AR2 of the substrate P.

  An exposure apparatus including a first optical system that irradiates exposure light onto the first area AR1 of the substrate P and a second optical system that irradiates exposure light onto the second area AR2 is provided via a projection optical system and a liquid. Of course, the present invention can be applied to an exposure apparatus that performs exposure without using a liquid in addition to an immersion exposure apparatus that performs exposure. For example, when the first optical system for exposing the first area AR1 (device pattern) is an optical system using vacuum ultraviolet light and the like, when the lifetime of the optical element and the light source is relatively short, the first optical system When both the first and second areas AR1 and AR2 are exposed using the, the lifetime is shortened. Therefore, exposure to the second area AR2 in which low resolution is allowed is performed using the second optical system that does not use vacuum ultraviolet light, thereby suppressing a decrease in the lifetime of the first optical system, and reducing the apparatus cost and running cost. Can be reduced.

  Note that the second area AR2 may be defined by the size of the liquid immersion area. That is, the area where the liquid can be held in the optical path of the exposure light may be defined as the first area AR1, and the area where the optical path of the exposure light cannot be filled with the liquid may be defined as the second area AR2. If the immersion area is large, the second area AR2 is wide, and conversely if the immersion area is small, the second area AR2 is defined to be small. The size of the immersion area and the shot area on the substrate P (chip) ) To determine which shot area (chip) is the second area AR2.

  Further, the liquid supply device and the liquid recovery device in the above-described embodiment have the supply nozzle and the recovery nozzle on both sides of the projection region of the projection optical system PL, and one of the projection regions according to the scanning direction of the substrate P. The liquid is supplied from the side and the liquid is recovered from the other side. However, the configuration of the liquid supply device and the liquid recovery device is not limited to this, and is locally immersed on the image plane side of the projection optical system PL. It suffices if a region can be formed. Here, the “local liquid immersion region” is a liquid immersion region smaller than the substrate P.

  As described above, the liquid 50 in the above-described embodiment is composed of pure water. Pure water has an advantage that it can be easily obtained in large quantities at a semiconductor manufacturing factory or the like, and has no adverse effect on the photoresist, optical element (lens), etc. on the substrate P. In addition, pure water has no adverse effects on the environment, and since the impurity content is extremely low, it can be expected to clean the surface of the substrate P and the surface of the optical element provided on the front end surface of the projection optical system PL. .

  The refractive index n of pure water (water) with respect to the exposure light EL having a wavelength of about 193 nm is said to be about 1.44 to 1.47, and ArF excimer laser light (wavelength 193 nm) is used as the light source of the exposure light EL. Is used, the wavelength is shortened to 1 / n, that is, about 131 to 134 nm on the substrate P, and a high resolution can be obtained. Furthermore, since the depth of focus is expanded to about n times, that is, about 1.44 to 1.47 times compared with that in the air, if it is sufficient to ensure the same depth of focus as that used in the air. The numerical aperture of the projection optical system PL can be further increased, and the resolution is improved in this respect as well.

  In the above-described embodiment, the lens 60 is attached to the tip of the projection optical system PL. However, as an optical element attached to the tip of the projection optical system PL, the optical characteristics of the projection optical system PL, such as aberration (spherical aberration, coma) It may be an optical plate used for adjustment of aberration and the like. Alternatively, it may be a plane parallel plate that can transmit the exposure light EL. By making the optical element in contact with the liquid 50 into a plane parallel plate that is cheaper than the lens, the transmittance of the projection optical system PL and the exposure light EL on the substrate P during transportation, assembly, adjustment, etc. of the exposure apparatus EX. Even if a substance that reduces the illuminance and the uniformity of the illuminance distribution (for example, silicon-based organic matter) adheres to the plane-parallel plate, the plane-parallel plate may be replaced just before the liquid 50 is supplied. There is an advantage that the replacement cost is lower than in the case where the optical element in contact with the lens is a lens. That is, the surface of the optical element that comes into contact with the liquid 50 is contaminated due to scattering particles generated from the resist by exposure to the exposure light EL, or adhesion of impurities in the liquid 50, and the optical element is periodically replaced. Although it is necessary, by making this optical element an inexpensive parallel flat plate, the cost of replacement parts is lower than that of lenses and the time required for replacement can be shortened, resulting in an increase in maintenance costs (running costs). And a decrease in throughput. Further, when the pressure between the optical element at the tip of the projection optical system and the substrate P generated by the flow of the liquid 50 is large, the optical element is not exchangeable but the optical element is not moved by the pressure. It may be firmly fixed to.

The liquid 50 of the present embodiment is water, but may be a liquid other than water. For example, when the light source of the exposure light EL is an F 2 laser, the F 2 laser light does not transmit water. In this case, the liquid 50 may be, for example, fluorine oil (fluorine liquid) or perfluorinated polyether (PFPE) that can transmit F 2 laser light. In addition, as the liquid 50, the liquid 50 is transmissive to the exposure light EL, has a refractive index as high as possible, and is stable with respect to the photoresist applied to the projection optical system PL and the surface of the substrate P (for example, Cedar). Oil) can also be used.

  The substrate P in each of the above embodiments is not only a semiconductor wafer for manufacturing a semiconductor device, but also a glass substrate for a display device, a ceramic wafer for a thin film magnetic head, or an original mask or reticle used in an exposure apparatus. (Synthetic quartz, silicon wafer) or the like is applied.

  As the exposure apparatus EX, in addition to the step-and-scan type scanning exposure apparatus (scanning stepper) that scans and exposes the pattern of the mask M by moving the mask M and the substrate P synchronously, the mask M and the substrate P Can be applied to a step-and-repeat type projection exposure apparatus (stepper) in which the pattern of the mask M is collectively exposed while the substrate P is stationary and the substrate P is sequentially moved stepwise. The present invention can also be applied to a step-and-stitch type exposure apparatus that partially transfers at least two patterns on the substrate P.

  The type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern on the substrate P, but an exposure apparatus for manufacturing a liquid crystal display element or a display, a thin film magnetic head, an image sensor (CCD). ) Or an exposure apparatus for manufacturing reticles or masks.

  The present invention can also be applied to a twin stage type exposure apparatus disclosed in JP-A-10-163099, JP-A-10-214783, JP 2000-505958, and the like.

  When using a linear motor (see USP5,623,853 or USP5,528,118) for the substrate stage PST and mask stage MST, use either an air levitation type using air bearings or a magnetic levitation type using Lorentz force or reactance force. Also good. Each stage PST, MST may be a type that moves along a guide, or may be a guideless type that does not have a guide.

  As a driving mechanism for each stage PST, MST, a planar motor that drives each stage PST, MST by electromagnetic force with a magnet unit having a two-dimensionally arranged magnet and an armature unit having a two-dimensionally arranged coil facing each other is provided. It may be used. In this case, either one of the magnet unit and the armature unit may be connected to the stages PST and MST, and the other of the magnet unit and the armature unit may be provided on the moving surface side of the stages PST and MST.

As described in JP-A-8-166475 (USP 5,528,118), the reaction force generated by the movement of the substrate stage PST is not transmitted to the projection optical system PL, but mechanically using a frame member. You may escape to the floor (ground).
As described in JP-A-8-330224 (US S / N 08 / 416,558), a frame member is used so that the reaction force generated by the movement of the mask stage MST is not transmitted to the projection optical system PL. May be mechanically released to the floor (ground).

  As described above, the exposure apparatus EX according to the present embodiment maintains various mechanical subsystems including the respective constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Manufactured by assembling. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  As shown in FIG. 14, a microdevice such as a semiconductor device includes a step 201 for designing a function / performance of the microdevice, a step 202 for producing a mask (reticle) based on the design step, and a substrate as a base material of the device. Manufacturing step 203, exposure processing step 204 for exposing the mask pattern onto the substrate by the exposure apparatus EX of the above-described embodiment, device assembly step (including dicing process, bonding process, packaging process) 205, inspection step 206, etc. It is manufactured after.

It is a schematic block diagram which shows one Embodiment of the exposure apparatus used for the exposure method of this invention. It is a figure which shows the positional relationship of the front-end | tip part of a projection optical system, a liquid supply apparatus, and a liquid collection | recovery apparatus. It is a figure which shows the example of arrangement | positioning of a supply nozzle and a collection | recovery nozzle. It is a figure which shows the example of arrangement | positioning of a supply nozzle and a collection | recovery nozzle. It is a top view which shows the mask which concerns on this invention. It is a top view which shows the board | substrate which concerns on this invention. It is a figure which shows the structural example of the optical system at the time of exposing a 2nd area | region. It is a figure which shows arrangement | positioning on the mask stage of the glass base material in which the pattern for the exposure of 2nd area | region was formed. It is a figure which shows the other structural example of the optical system at the time of exposing a 2nd area | region. It is a schematic block diagram which shows other embodiment of the exposure apparatus of this invention. It is a figure which shows an example of the glass substrate in which the pattern for the exposure of 2nd area | region was formed. It is a figure which shows the other example of the glass base material in which the pattern for the exposure of 2nd area | region was formed. It is a schematic block diagram which shows other embodiment of the exposure apparatus of this invention. It is a flowchart figure which shows an example of the manufacturing process of a semiconductor device. It is a figure for demonstrating the conventional subject.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Liquid supply apparatus, 2 ... Liquid recovery apparatus, 41 ... Device pattern (1st pattern),
42 ... line and space pattern (second pattern), 50 ... liquid,
AR1 ... 1st area | region (pattern formation area), AR2 ... 2nd area | region (edge area | region),
EX ... exposure device, MF ... glass substrate (base material), P ... substrate,
PL ... projection optical system (first optical system), PL2 ... second projection optical system (second optical system),
PST1 ... 1st substrate stage (1st movable body),
PST2 ... Second substrate stage (second movable body)

Claims (54)

  1. In an exposure method for exposing a substrate via a projection optical system,
    Supplying a liquid between the projection optical system and the substrate, and exposing a first region near the center of the substrate via the projection optical system and the liquid;
    An exposure method comprising exposing the second region including the edge of the substrate through the projection optical system without the liquid.
  2. In an exposure method of supplying a liquid between a first projection optical system and a substrate and exposing the substrate through the first projection optical system and the liquid,
    When exposing the first region near the center of the substrate through the first projection optical system and the liquid, and exposing the second region including the edge of the substrate through the second projection optical system; An exposure method characterized by different exposure conditions.
  3. The substrate is exposed with exposure light from a mask illuminated with exposure light;
    The exposure method according to claim 2, wherein the exposure condition includes an illumination condition for the mask.
  4.   The exposure method according to claim 1, wherein the second region of the substrate is exposed under exposure conditions resistant to defocus.
  5.   2. The exposure method according to claim 1, wherein the numerical aperture of the projection optical system when exposing the second area is made smaller than when exposing the first area.
  6.   The exposure method according to claim 1, wherein the second region is exposed by a two-beam interference method.
  7.   7. The exposure method according to claim 6, wherein an image of a line and space pattern in which a line pattern is formed at a predetermined pitch is projected onto the second region.
  8.   The exposure method according to claim 1, wherein a first pattern used for exposure of the first region is different from a second pattern used for exposure of the second region.
  9. The first area is exposed while moving the first pattern and the substrate,
    9. The exposure method according to claim 8, wherein the second region is exposed while the second pattern and the substrate are stationary.
  10. The first area is exposed while moving the first pattern and the substrate,
    9. The exposure method according to claim 8, wherein the second area is exposed while moving the substrate while the second pattern is stationary.
  11.   The exposure method according to claim 8, wherein the first pattern and the second pattern are formed on the same mask.
  12.   The first pattern is formed on a mask, and the second pattern is formed on a substrate fixed on a mask stage holding the mask at a position apart from the mask. The exposure method according to any one of Items 8 to 10.
  13.   The exposure according to claim 1, wherein the second region is irradiated with exposure light, and a dummy pattern corresponding to the pattern formed in the first region on the substrate is formed in the second region. Method.
  14.   The exposure method according to claim 13, wherein the dummy pattern includes an interference fringe pattern projected onto the second region by a two-beam interference method.
  15.   14. The exposure method according to claim 13, wherein the dummy pattern includes a pattern projected onto the second region by illuminating a pattern of a mask or glass substrate disposed at a position conjugate with the substrate with exposure light.
  16.   The exposure method according to claim 13, wherein the second region is irradiated with exposure light according to a shape of a first pattern used for exposure of the first region.
  17.   The exposure method according to any one of claims 13 to 15, wherein the second region is irradiated with exposure light in accordance with a pattern formation density of a first pattern used for the exposure of the first region.
  18.   2. The exposure method according to claim 1, wherein a distance between the projection optical system and the substrate is different between when the first region is exposed and when the second region is exposed.
  19.   An image plane formed through the projection optical system so that the distance between the projection optical system and the substrate is substantially the same when the first region is exposed and when the second region is exposed. The exposure method according to claim 1, wherein the position adjustment is performed.
  20.   The exposure method according to claim 1, wherein the first region is exposed after the exposure of the second region is completed.
  21. An exposure method for exposing a substrate,
    Exposing a first region near the center of the substrate through a first optical system and a liquid between the first optical system and the substrate to form a pattern in the first region;
    An exposure method comprising: exposing a second area including an edge of the substrate through a second optical system without a liquid to form a pattern in the second area.
  22. The first optical system is disposed at a first station, and the second optical system is disposed at a second station;
    The second area of the substrate is exposed without liquid through the second optical system in the second station, and the first area of the substrate is exposed through liquid with the first optical system in the first station. The exposure method according to claim 21.
  23.   During exposure of the first region of the substrate held on the first substrate stage through the first optical system and the liquid in the first station, the second region of the substrate held on the second substrate stage in the second station. The exposure method according to claim 22, wherein the exposure of the two regions is performed through the second optical system without passing through the liquid.
  24. A first region of the substrate held on the substrate stage of the exposure apparatus is exposed via the first optical system and the liquid;
    The exposure method according to claim 21, wherein the second region of the substrate is exposed by the second optical system provided in the middle of a transport path between the coater / developer apparatus and the substrate stage of the exposure apparatus.
  25.   The said 2nd area | region is exposed by the said 2nd optical system before or after the exposure process by which the said board | substrate is exposed through the said 1st optical system in the state mounted in the said substrate stage. Exposure method.
  26.   The exposure method according to claim 21, wherein a second optical system for exposing the second region of the substrate is provided in a coater / developer apparatus.
  27.   The exposure method according to claim 21, wherein the first optical system and the second optical system are arranged above one substrate stage that supports the substrate.
  28.   The exposure method according to any one of claims 21 to 27, wherein a wavelength of exposure light used for exposure of the first region is different from a wavelength of exposure light used for exposure of the second region.
  29.   The exposure method according to any one of claims 21 to 28, wherein a first pattern used for exposure of the first region is different from a second pattern used for exposure of the second region.
  30.   30. The exposure according to claim 21, wherein the second region is irradiated with exposure light, and a dummy pattern corresponding to a pattern formed in the first region on the substrate is formed in the second region. Method.
  31.   The exposure method according to claim 30, wherein the dummy pattern includes an interference fringe pattern projected onto the second region by a two-beam interference method.
  32.   31. The exposure method according to claim 30, wherein the dummy pattern includes a pattern projected onto the second region by illuminating a pattern of a mask or a glass substrate disposed at a position conjugate with the substrate with exposure light.
  33.   The exposure method according to any one of claims 30 to 32, wherein the second region is irradiated with exposure light according to a shape of a first pattern used for exposure of the first region.
  34.   The exposure method according to any one of claims 30 to 32, wherein the second region is irradiated with exposure light in accordance with a pattern formation density of the first pattern used for the exposure of the first region.
  35. 35. A device manufacturing method using the exposure method according to any one of claims 1 to 34 .
  36. In an exposure apparatus that exposes a plurality of regions on a substrate,
    A first optical system that forms a pattern by irradiating exposure light through a liquid to a first region near the center of the substrate;
    An exposure apparatus, comprising: a second optical system that forms a pattern by irradiating a second region including an edge of the substrate with exposure light without liquid.
  37. 37. The exposure apparatus according to claim 36 , wherein a wavelength of exposure light used for exposure of the first region is different from a wavelength of exposure light used for exposure of the second region.
  38. 38. The exposure apparatus according to claim 36 or 37, wherein the second region is exposed by a two-beam interference method.
  39. A substrate stage for supporting a substrate on which a first region is exposed via the first optical system and the liquid;
    The exposure apparatus according to any one of claims 36 to 38 , wherein the second optical system is provided in the middle of a conveyance path between the coater / developer apparatus and the substrate stage.
  40. A substrate stage for supporting the substrate;
    The exposure apparatus according to any one of claims 36 to 38 , wherein the first optical system and the second optical system are disposed above one substrate stage.
  41. A first movable body capable of holding and moving the substrate having the first and second regions; and a second movable body movable and holding the substrate having the first and second regions;
    During the exposure of the first region on the substrate held on the first movable body using the first optical system, the second on the substrate held on the second movable body using the second optical system. An area is exposed, and after the exposure of the first area on the substrate held on the first movable body is completed, the first area on the substrate held on the second movable body is exposed using the first optical system. The exposure apparatus according to any one of claims 36 to 38 , wherein the exposure apparatus is started.
  42. An exposure apparatus for exposing a substrate,
    A first station comprising a liquid supply device, exposing a first region near the center of the substrate through the liquid supplied by the liquid supply device to form a pattern in the first region;
    An exposure apparatus comprising: a second station that exposes a second area including an edge of a substrate to which no liquid is supplied to form a pattern in the second area.
  43. The substrate has first and second regions, wherein the first region is exposed through a liquid at a first station, and the second region is exposed through a liquid at a second station. Item 42. The exposure apparatus according to Item 42 .
  44. 44. The exposure apparatus according to claim 42 , further comprising a first projection optical system provided in the first station and a second projection optical system provided in the second station.
  45. 45. The exposure according to any one of claims 42 to 44 , further comprising first and second movable bodies that move alternately while holding the substrate between the first station and the second station. apparatus.
  46. The first and second movable bodies are provided with a reference member for aligning the exposure area of the substrate. Before exposure is performed at the first station, the position measurement of the exposure area of the substrate is performed at the second station. 46. The exposure apparatus according to claim 45, which is performed.
  47. After the second area of the substrate is exposed at the second station, the substrate is moved to the first station by the first or second movable body, and the liquid is supplied to the first area to expose the first area. 47. The exposure apparatus according to any one of claims 42 to 46 , wherein:
  48. 48. The exposure apparatus according to claim 36 , wherein a first pattern used for exposure of the first area is different from a second pattern used for exposure of the second area.
  49. 49. The exposure according to any one of claims 36 to 48 , wherein the second region is irradiated with exposure light, and a dummy pattern corresponding to a pattern formed in the first region on the substrate is formed in the second region. apparatus.
  50. 50. The exposure apparatus according to claim 49 , wherein the dummy pattern includes an interference fringe pattern projected onto the second region by a two-beam interference method.
  51.   50. The exposure apparatus according to claim 49, wherein the dummy pattern includes a pattern projected onto the second region by illuminating a pattern of a mask or a glass substrate disposed at a position conjugate with the substrate with exposure light.
  52. 52. The exposure apparatus according to any one of claims 49 to 51 , wherein the second region is irradiated with exposure light according to a shape of a first pattern used for exposure of the first region.
  53. 52. The exposure apparatus according to any one of claims 49 to 51 , wherein the second region is irradiated with exposure light in accordance with a pattern formation density of a first pattern used for exposure of the first region.
  54. 54. A device manufacturing method using the exposure apparatus according to any one of claims 36 to 53 .
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EP1866700A1 (en) 2005-03-15 2007-12-19 Carl Zeiss SMT AG Projection exposure method and projection exposure system therefor
JPWO2007055237A1 (en) * 2005-11-09 2009-04-30 株式会社ニコン Exposure apparatus, exposure method, and device manufacturing method
US8934084B2 (en) 2006-05-31 2015-01-13 Asml Holding N.V. System and method for printing interference patterns having a pitch in a lithography system
US8896809B2 (en) 2007-08-15 2014-11-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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JP2009141263A (en) * 2007-12-10 2009-06-25 Toshiba Corp Exposure method, photo mask and reticle stage
US20090174873A1 (en) * 2007-12-17 2009-07-09 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
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