JPH0831514B2 - Substrate suction device - Google Patents
Substrate suction deviceInfo
- Publication number
- JPH0831514B2 JPH0831514B2 JP63152693A JP15269388A JPH0831514B2 JP H0831514 B2 JPH0831514 B2 JP H0831514B2 JP 63152693 A JP63152693 A JP 63152693A JP 15269388 A JP15269388 A JP 15269388A JP H0831514 B2 JPH0831514 B2 JP H0831514B2
- Authority
- JP
- Japan
- Prior art keywords
- convex portion
- wafer
- mounting surface
- substrate
- convex portions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体素子（LSI、VLSI等）を製造するため
の半導体ウェハ、もしくは液晶素子を製造するためのガ
ラスプレート等の基板を平坦に吸着固定する装置に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention flatly adsorbs a semiconductor wafer for manufacturing a semiconductor element (LSI, VLSI, etc.) or a substrate such as a glass plate for manufacturing a liquid crystal element. It relates to a fixing device.
従来、この種の基板を加工する装置、例えば投影型露
光装置、レーザリペア装置等においては、基板を真空吸
着して所定の平面内に平坦化矯正する真空吸着ホルダー
が使用されている。特にこの種の製造装置では、基板を
高い精度で平坦化する必要がある。投影型露光装置（ス
テッパー）の場合、レチクルの回路パターンを等倍、1/
5又は1/10等の倍率で基板表面へ結像投影するための投
影レンズが設けられている。この投影レンズは広い投影
領域を確保しつつ、1/5縮小の場合は１μｍ以下の高い
解像力を得る必要があるため、年々高N.A.化され、それ
に伴って焦点深度も浅くなってきている。ある種の投影
レンズでは、15×15mm角のフィールド内で±１μｍ程度
の焦点深度しかなく、これに伴って、より高精度な焦点
合わせの技術も要求されてきている。2. Description of the Related Art Conventionally, in a device for processing a substrate of this type, for example, a projection type exposure device, a laser repair device, etc., a vacuum suction holder that vacuum-sucks a substrate to flatten and correct it within a predetermined plane is used. Especially in this type of manufacturing apparatus, it is necessary to flatten the substrate with high accuracy. In the case of a projection type exposure system (stepper), the circuit pattern of the reticle is
A projection lens is provided for forming an image on the substrate surface with a magnification of 5 or 1/10. Since this projection lens needs to obtain a high projection power of 1 μm or less in the case of 1/5 reduction while securing a wide projection area, the NA is increased year by year, and the depth of focus is becoming shallower accordingly. A certain type of projection lens has a depth of focus of about ± 1 μm within a field of 15 × 15 mm square, and accordingly, a more precise focusing technique is also required.
一方、露光すべき15×15mm角内の領域全面において±
１μｍの焦点深度しかないため、基板上の露光すべき１
つの領域の全面は、投影レンズの最良結像面と正確に一
致させる必要がある。ところがウェハやガラスプレート
の表面には、局所的には数μｍ程度、全面では数十μｍ
程度のそりや凹凸が存在するため、そのままでは良好な
解像特性でパターンを露光することは困難である。On the other hand, within the entire area of the 15 x 15 mm square to be exposed ±
Since there is only 1 μm depth of focus, it should be exposed on the substrate 1
The entire area of the two areas must be exactly aligned with the best image plane of the projection lens. However, on the surface of the wafer or glass plate, it is about several μm locally and several tens of μm on the entire surface.
Since there is a degree of warpage and unevenness, it is difficult to expose a pattern with good resolution characteristics as it is.
そこで、一例として第２図（Ａ）、（Ｂ）に示すよう
なウェハホルダー（真空チャック）１によってウェハＷ
を平坦化矯正することが考えられている。このウェハホ
ルダー１はステッパーのウェハステージの最上部に投影
レンズと対向するように設けられ、ウェハステージとと
もに、投影レンズの下を２次元移動（ステッピング等）
する。Therefore, as an example, the wafer W is held by the wafer holder (vacuum chuck) 1 as shown in FIGS.
Is considered to be flattened and corrected. The wafer holder 1 is provided at the top of the wafer stage of the stepper so as to face the projection lens, and moves two-dimensionally under the projection lens (stepping etc.) together with the wafer stage.
To do.
第２図（Ａ）はウェハホルダー１の平面図であり、第
２図（Ｂ）は第２図（Ａ）のＣ−３矢印断面図である。
ウェハホルダー１は、ウェハＷによりも十分に厚い金属
又はセラミックス材で円板状に作られており、載置面の
形状は、ウェハＷの直径よりもわずかに小さい径の円形
であるものとする。ウェハホルダー１の中心部には、ウ
ェハＷの載置や取りはずしのためのウェハ受渡し用昇降
機構２が上下動のときに貫通するような円形開口部1aが
形成されている。またウェハホルダー１の載置面には、
ホルダー１の中心から放射方向に同心円状の環状凸部10
a、10b、10c、10d、10e、10f、10gが放射方向に一定ピ
ッチでリム状に形成されている。ここで載置面の最外周
側に位置する環状凸部10aの半径は、ウェハＷの中心か
ら直線的な切欠き（オリエンテーションフラット）OFま
での半径よりもわずかに小さく定められている。また、
各環状凸部10a〜10gの上端面の幅（径方向の寸法）は極
力小さくなるように作られており、その各上端面によっ
て規定される面が、平坦化の基準平面となる。尚、最も
内側の環状凸部10gは開口部1aの周囲に形成され、この
凸部10gと凸部10aとによって雰囲気圧（大気圧）とのリ
ークが防止される。2 (A) is a plan view of the wafer holder 1, and FIG. 2 (B) is a sectional view along arrow C-3 of FIG. 2 (A).
The wafer holder 1 is made of a metal or a ceramic material that is sufficiently thicker than the wafer W and has a disk shape, and the mounting surface has a circular shape with a diameter slightly smaller than the diameter of the wafer W. . At the center of the wafer holder 1, there is formed a circular opening 1a through which the wafer delivery elevating mechanism 2 for placing and removing the wafer W penetrates when it moves up and down. Also, on the mounting surface of the wafer holder 1,
Concentric circular annular protrusion 10 in the radial direction from the center of the holder 1
A, 10b, 10c, 10d, 10e, 10f and 10g are formed in a rim shape at a constant pitch in the radial direction. Here, the radius of the annular convex portion 10a located on the outermost peripheral side of the mounting surface is set to be slightly smaller than the radius from the center of the wafer W to the linear notch (orientation flat) OF. Also,
The width (diameter in the radial direction) of the upper end surface of each annular convex portion 10a to 10g is made as small as possible, and the surface defined by each upper end surface serves as a reference plane for flattening. The innermost annular convex portion 10g is formed around the opening 1a, and the convex portion 10g and the convex portion 10a prevent leakage of atmospheric pressure (atmospheric pressure).
さらに各環状凸部10a〜10gの間の各凹部（環状）に
は、真空吸着のための吸気孔1cが径方向に並べて形成さ
れ、各吸気孔1cはホルダー１内部に径方向に伸びたスリ
ーブ状の孔1bと連通している。この孔1bを真空源につな
げて、減圧することによって、ウェハＷの裏面と輪帯状
の各凹部とでかこまれた空間が負圧になり、ウェハＷの
裏面は環状凸部10a〜10gの上端面にならって平坦化矯正
される。Further, suction holes 1c for vacuum adsorption are formed in a line in the radial direction in the concave portions (annular shape) between the circular convex portions 10a to 10g, and the suction holes 1c extend radially inside the holder 1. Communicates with the hole 1b. By connecting this hole 1b to a vacuum source and reducing the pressure, the space between the back surface of the wafer W and each of the ring-shaped recesses becomes a negative pressure, and the back surface of the wafer W is above the annular projections 10a to 10g. The end face is flattened and straightened.
また、ウェハ裏面との接触面積を極力小さくして、凸
部の上端面とウェハ裏面との間に微小なゴミ粒子がはさ
み込まれる確率を小さくする構造のウェハホルダーも考
えられている。A wafer holder having a structure in which the contact area with the back surface of the wafer is made as small as possible to reduce the probability that fine dust particles are caught between the upper end surface of the convex portion and the back surface of the wafer is also considered.
第３図（Ａ）、（Ｂ）は、所謂ピンチャック方式と呼
ばれるもので、第３図（Ａ）の平面図に示すように、載
置面の最外周には、ウェハＷの中心から切欠きOFまでの
半径よりわずかに小さな半径で、幅１〜2mm程度の環状
凸部10aが形成され、ウェハ受渡し用昇降機構２が通る
開口部1aの周囲にも、幅１〜2mm程度の環状凸部10gが形
成されている。そして環状凸部10aと10gに挟まれた輪帯
状の凹部には、２次元に一定ピッチ（２〜5mm程度）
で、0.1〜1mm角又は丸のドット状の微小凸部11が複数形
成されている。これら微小凸部11の各上端面と、環状凸
部10a、10gの各上端面とは、ウェハＷの裏面と接触する
基準平面を規定する。3 (A) and 3 (B) are so-called pin chuck methods, and as shown in the plan view of FIG. 3 (A), the outermost periphery of the mounting surface is cut from the center of the wafer W. An annular convex portion 10a having a width of about 1 to 2 mm is formed with a radius slightly smaller than the radius to the notch OF, and an annular convex portion having a width of about 1 to 2 mm is also formed around the opening 1a through which the wafer transfer elevating mechanism 2 passes. A portion 10g is formed. The ring-shaped concave portion sandwiched between the annular convex portions 10a and 10g has a two-dimensional constant pitch (about 2 to 5 mm).
A plurality of dot-shaped minute convex portions 11 each having a square shape of 0.1 to 1 mm or a circle are formed. The upper end surfaces of the minute convex portions 11 and the upper end surfaces of the annular convex portions 10a and 10g define a reference plane that contacts the back surface of the wafer W.
第３図（Ｂ）は第３図（Ａ）のＣ−４矢視断面図であ
り、スリーブ状の孔1bがホルダー１内の径方向に伸び、
これとつながった吸気孔1cが載置面の凹部内に形成され
る。孔1bを真空源につなげることにより、環状凸部10a
と10gに挟まれた凹部とウェハ裏面とで囲まれた空間が
負圧になり、ウェハＷは基準平面にならって平坦化矯正
される。3 (B) is a sectional view taken along the line C-4 of FIG. 3 (A), in which the sleeve-shaped hole 1b extends in the radial direction in the holder 1,
An intake hole 1c connected to this is formed in the recess of the mounting surface. By connecting the hole 1b to a vacuum source, the annular protrusion 10a
A negative pressure is applied to the space surrounded by the concave portion sandwiched between 10 g and the back surface of the wafer, and the wafer W is flattened and corrected according to the reference plane.
上記第２図（Ａ）、（Ｂ）、又は第３図（Ａ）、
（Ｂ）に示したウェハホルダー１では、いずれもウェハ
Ｗの最外周部は、環状凸部10aよりも外側にオーバーハ
ングしているため、ウェハ最外周部は実効的には吸着力
を受けていない。同様にウェハホルダー１の中央部の開
口部1aのところでも吸着力は働かない。このためウェハ
全面で真空吸着力を受ける部分と受けない部分（大気圧
に解放されている部分）との隣接部では、吸着力を受け
ている部分にくらべて、大きなソリが発生することがわ
かった。このソリの大きさは、ステッパー等で要求され
るウェハ表面の平面度の規格からはずれることもあり、
露光されるパターンの解像不良を招く恐れがある。2 (A), (B), or FIG. 3 (A),
In each of the wafer holders 1 shown in (B), since the outermost peripheral portion of the wafer W overhangs outside the annular convex portion 10a, the outermost peripheral portion of the wafer is effectively subjected to the suction force. Absent. Similarly, the suction force does not work even at the central opening 1a of the wafer holder 1. For this reason, it was found that a larger warp is generated in the adjacent part of the entire surface of the wafer that receives the vacuum suction force and the part that does not receive the vacuum suction force (the portion that is released to the atmospheric pressure), compared to the portion that receives the suction force. It was The size of this warp may deviate from the flatness standard of the wafer surface required by a stepper or the like.
There is a risk of causing poor resolution of the exposed pattern.
本発明では、ウェハ等の基板を吸着したときのソリ、
特に実効的な吸着力が働く部分と、働かない部分との隣
接部で生じるソリを極力小さくすることを目的としてい
る。In the present invention, the warp when a substrate such as a wafer is sucked,
In particular, the purpose is to minimize the warpage that occurs between the portion where the effective suction force works and the portion where the effective suction force does not work.
このため本発明では、上記隣接部近傍に位置する凸
部、特に載置面の最外周に位置する凸部をリム状の第１
の環状凸部にし、その内側にさらに第２の凸部を設け、
第１の凸部と第２の凸部の放射方向の間隔を小さな第１
のピッチとし、第２の凸部からさらに内側にも複数の凸
部を形成し、第２の凸部に隣接した内側の凸部と第２の
凸部のピッチを第１のピッチよりも大きくするように構
成した。Therefore, in the present invention, the convex portion located in the vicinity of the adjacent portion, particularly the convex portion located on the outermost periphery of the mounting surface, is formed into the rim-shaped first portion.
The annular convex portion of and the second convex portion is further provided inside thereof.
The first radial distance between the first convex portion and the second convex portion is small.
A plurality of convex portions are formed further inward from the second convex portion, and the pitch between the inner convex portion and the second convex portion adjacent to the second convex portion is larger than the first pitch. Configured to do so.
また、載置面の最外周以外に大気圧に解放されている
部分がある場合は、そこにも同様のピッチ関係で複数の
凸部を形成した。In addition, when there is a portion open to the atmospheric pressure other than the outermost periphery of the mounting surface, a plurality of convex portions were formed in the same pitch relationship.
基板の真空吸着時におけるソリ量を、基板の形状、材
質等から材料力学上のモデルより考察してみると、基板
吸着面の周辺部のソリ量は、微小幅で考えると凸部のピ
ッチの４乗に比例することが予想される。従って吸着面
の周辺部での凸部のピッチを他の部分より小さくしてお
くことによって、基板の非吸着部でも、吸着部と同程度
のソリ量に押えることが可能となる。Considering the amount of warpage during vacuum adsorption of the substrate from the material mechanics model from the shape and material of the substrate, the amount of warpage in the peripheral part of the substrate adsorption surface is It is expected to be proportional to the fourth power. Therefore, by setting the pitch of the convex portions in the peripheral portion of the suction surface smaller than the other portions, it is possible to suppress the amount of warpage in the non-suction portion of the substrate to the same extent as the suction portion.
そこで第４図、第５図に示したモデルを用いて、基板
（ウェハＷ）のソリ量を考えてみる。Therefore, the warp amount of the substrate (wafer W) will be considered using the models shown in FIGS. 4 and 5.
第４図は、ウェハホルダー１上の凸部が一方向にピッ
チl1で並んでいる部分（内面部）のウェハＷのたわみ
（ソリ）の様子を誇張して示す図である。この場合、吸
着部の内面部では各凸部を支点ａ、ｂ、ｃ、ｄとし、各
支点ａ〜ｄのウェハ中立面は水平とした等分布荷重をう
ける両端固定梁のモデルがあてはまる。FIG. 4 is an exaggerated view of the warp of the wafer W in the portion (inner surface portion) where the convex portions on the wafer holder 1 are arranged in one direction at the pitch l 1 . In this case, a model of a fixed-end beam with uniform distribution load is applied in which the convex portions are fulcrums a, b, c, and d on the inner surface of the suction portion, and the wafer neutral plane of each fulcrum a to d is horizontal.
このモデルの場合、材料力学の計算式は、凸部と凸部
の間の凹部におけるウェハＷのたわみ量をw1とすると、 式（１）で表わされる。ここでｑ、Ｅ、Ｉはそれぞれq:
単位長さ当りの荷重、E:縦弾性係数、I:断面二次モーメ
ントを表わす。In the case of this model, the material mechanics calculation formula is as follows, where w 1 is the deflection amount of the wafer W in the concave portion between the convex portions. It is represented by equation (1). Where q, E, and I are q:
Load per unit length, E: Elastic modulus of elasticity, I: Moment of inertia of area.
一方、第５図はウェハホルダー１の外周部におけるウ
ェハＷのたわみ、そりの様子を誇張して示した図であ
る。吸着面の最外周とそのすぐ内側の２ケ所の凸部がピ
ッチl2で並んでおり、その間の凹部が減圧されているも
のとする。この場合、内側の凸部を支点Ａとすると、支
点Ａのウェハ中立面は水平になるが、最外周の凸部のＢ
点ではウェハＷを支持しているだけなので、Ｂ点から外
側にl3だけオーバーハングしたウェハ外周部には基準平
面に対してw3のそり量が生じる。また、Ａ点、Ｂ点間に
もたわみ量w2が生じる。このような場合は材料力学上の
モデルとして、等分布荷重をうける片側固定一片側支持
のモデルがあてはまる。On the other hand, FIG. 5 is an exaggerated view of the warp and warp of the wafer W on the outer peripheral portion of the wafer holder 1. It is assumed that the outermost circumference of the suction surface and the two convex portions immediately inside thereof are arranged at a pitch of l 2 , and the concave portion between them is depressurized. In this case, if the inner convex portion is the fulcrum A, the neutral surface of the wafer at the fulcrum A is horizontal, but the outermost convex portion B is B.
Since the wafer W is only supported at the point, a warp amount of w 3 with respect to the reference plane is generated in the outer peripheral portion of the wafer overhanging by l 3 from the point B to the outside. In addition, the amount of deflection w 2 also occurs between points A and B. In such a case, the one-sided fixed-one-sided support model, which receives uniform load distribution, is applicable as a material mechanics model.
ここでたわみ量w2を求めてみると、式（２）のように
なる。Here, when the deflection amount w 2 is obtained, it becomes as shown in Expression (2).
ここで内面側と最外周側の凸部のピッチl1とl2が等し
いとした場合、すなわち第２図（Ａ）、（Ｂ）のような
ウェハホルダーの場合、式（１）、（２）からたわみ量
の比w2/w1を求めると、w2/w1＝2.08となる。つまり、第
２図（Ａ）、（Ｂ）のように環状凸部10a〜10gを径方向
に等しいピッチで配置すると、凸部10aと10bの間、もし
くは凸部10fと10gの間では、他の凹部のところにくらべ
て最大約2.1倍のたわみ量が生じることになる。 Here, when the pitches l 1 and l 2 of the convex portions on the inner surface side and the outermost peripheral side are equal, that is, in the case of the wafer holder as shown in FIGS. 2A and 2B, the formulas (1) and (2 ), The ratio of deflection amount w 2 / w 1 is calculated as w 2 / w 1 = 2.08. That is, when the annular convex portions 10a to 10g are arranged at equal pitches in the radial direction as shown in FIGS. 2 (A) and (B), other portions are formed between the convex portions 10a and 10b or between the convex portions 10f and 10g. The maximum amount of deflection is about 2.1 times that of the concave portion.
また、ウェハ外周部でオーバーハング量l3が生じてい
る場合、そり量w3は式（３）のようになる。Further, when the overhang amount l 3 is generated at the outer peripheral portion of the wafer, the warp amount w 3 is expressed by the equation (3).
ここでθＢはＢ点でのウェハ傾斜角である。 Where θ B is the wafer tilt angle at point B.
従って吸着面周辺部のたわみ量を内面側のたわみ量と
ほぼ等しく（w1≒w2）するためには、先の式（１）、
（２）から、ピッチl2をピッチl1に対して約1/1.2の値
にすればよいことになる。Therefore, in order to make the amount of deflection around the suction surface approximately equal to the amount of deflection on the inner surface side (w 1 ≈w 2 ), the above equation (1),
From (2), the pitch l 2 should be set to a value of about 1 / 1.2 with respect to the pitch l 1 .
さらにオーバーハングによるそり量w3を小さくするこ
とを考えると、l2/l1＜1/1.2に設定すればよく、これに
よってウェハ全面（特に周辺部）に渡って均一な平坦度
が得られることになる。Furthermore, considering that the amount of warp w 3 due to overhang should be reduced, it is only necessary to set l 2 / l 1 <1 / 1.2, which provides uniform flatness over the entire wafer surface (particularly the peripheral portion). It will be.
第１図（Ａ）、（Ｂ）は本発明の実施例による吸着装
置（ウェハホルダー）の構造を示し、第２図（Ａ）、
（Ｂ）に示した構造のうち、環状凸部10a〜10gの配置
を、本発明の趣旨に沿って変更したものである。第１図
（Ａ）はホルダー１の平面図、第１図（Ｂ）は第１図
（Ａ）のＣ−１矢視断面図である。ここでは最外周の環
状凸部10aとその内側の環状凸部10bとのピッチ、及び開
口部1a周囲の環状凸部10gとその外側の環状凸部10fとの
ピッチをl2として、他の隣接する環状凸部同志のピッチ
をl1として、先にも述べたようにl2/l1＜1/1.2を満すよ
うに定めた。ここで各環状凸部10a〜10gの上端面の径方
向の幅は、平面度悪化の原因となるゴミの乗る確率を小
さくするため極力小さくした方がよく、加工性も考慮し
て0.1〜0.5mm程度である。FIGS. 1 (A) and 1 (B) show the structure of a suction device (wafer holder) according to an embodiment of the present invention, and FIGS.
In the structure shown in (B), the arrangement of the annular convex portions 10a to 10g is changed in accordance with the gist of the present invention. 1 (A) is a plan view of the holder 1, and FIG. 1 (B) is a sectional view taken along the line C-1 of FIG. 1 (A). Here, the pitch between the outermost annular projection 10a and the inner annular projection 10b, and the pitch between the annular projection 10g around the opening 1a and the outer annular projection 10f are set to l 2 , and the other adjacent The pitch of the ring-shaped convex parts is set to l 1 , and as described above, l 2 / l 1 <1 / 1.2 is satisfied. Here, the radial width of the upper end surface of each annular convex portion 10a ~ 10g is preferably as small as possible in order to reduce the probability of dust that will cause the deterioration of flatness, 0.1 ~ 0.5 in consideration of workability. It is about mm.
そしてオーバーハング量8mm程度を見込んで、l2/l1の
値を1/2程度にして実験したところ、ほぼ良好な結果が
得られた。Then, when an experiment was conducted with the value of l 2 / l 1 set to about 1/2, assuming an overhang amount of about 8 mm, almost good results were obtained.
以上、本発明の実施例では、同心円状の環状凸部を基
準平面を規定するものとして例示したが、その他の形状
にしてもよい。例えば凸部パターンが第４図に示される
様なピンチャックの場合は、同様の理由から大気隣接部
（最外周、又は最内周）付近のピンピッチを小さくす
る、又は内側ピンピッチよりも小さなピッチで輪帯状の
凸部を配置する事により、前記同様の効果が得られる。As described above, in the embodiment of the present invention, the concentric annular convex portion is illustrated as defining the reference plane, but other shapes may be used. For example, in the case of a pin chuck whose convex pattern is as shown in FIG. 4, for the same reason, the pin pitch near the atmosphere adjacent part (outermost circumference or innermost circumference) is made smaller, or at a pitch smaller than the inner pin pitch. By arranging the ring-shaped protrusions, the same effect as described above can be obtained.
以上、本発明の実施例では、ウェハホルダー１の中央
部には、吸着力の働かない開口部1aが形成されている
が、昇降機構２がない場合は、開口部1aを設ける必要は
なく、適宜、吸着面あるいは大気圧解放面にしておいて
もよい。As described above, in the embodiment of the present invention, the opening 1a where the suction force does not work is formed in the central portion of the wafer holder 1. However, when the lifting mechanism 2 is not provided, it is not necessary to provide the opening 1a. It may be a suction surface or an atmospheric pressure release surface as appropriate.
また実施例では、円形のウェハＷの吸着を考えたが、
矩形のガラスプレート等の吸着の場合は、ホルダーの外
形が、それにあわせて矩形となり、環状凸部も円形では
なく矩形に形成される。さらに環状凸部のうち最外周の
凸部10a（又は最内周の凸部10g）は大気圧へのリークを
防止するため、連続している必要があるが、例えば第１
図（Ａ）中の環状凸部10b、10c、10d、10e、10f等は、
円周方向に２〜5mm程度のピッチでドット状に分断して
おいてもよい。このようにすると、第１図のウェハホル
ダー１の接触面積はさらに小さなものになる。Further, in the embodiment, the adsorption of the circular wafer W is considered,
In the case of suction of a rectangular glass plate or the like, the outer shape of the holder becomes rectangular accordingly, and the annular convex portion is also formed in a rectangular shape instead of a circular shape. Furthermore, the outermost protrusion 10a (or the innermost protrusion 10g) of the annular protrusions needs to be continuous in order to prevent leakage to the atmospheric pressure.
The annular protrusions 10b, 10c, 10d, 10e, 10f, etc. in FIG.
It may be divided into dots at a pitch of about 2 to 5 mm in the circumferential direction. By doing so, the contact area of the wafer holder 1 shown in FIG. 1 is further reduced.
またウェハ裏面を吸着する輪帯状の各吸着面は、スリ
ーブ状の孔1bによって一括に減圧せずに、それぞれ所定
の時間遅れを与えて、載置面の中央から外側（又は逆方
向）の順に減圧してもよい。さらに輪帯状の吸着面は、
円周方向に２〜４分割にして、独立に減圧できるように
してもよい。Further, each ring-shaped suction surface for sucking the back surface of the wafer is given a predetermined time delay without being collectively decompressed by the sleeve-shaped holes 1b, and is placed in order from the center of the mounting surface to the outside (or the opposite direction). The pressure may be reduced. Furthermore, the ring-shaped suction surface
It may be divided into 2 to 4 in the circumferential direction so that the pressure can be independently reduced.
尚、最外周の環状凸部10aをウェハ外形とぴったりと
一致させる場合は、オーバーハングによるより量w3は考
慮しなくてもよい。When the outermost annular projection 10a is made to match the outer shape of the wafer exactly, it is not necessary to consider the amount w 3 due to the overhang.
以上のように本発明によれば、基板を真空吸着した時
に生じるそりやたわみ量を全面に渡って小さく押えるこ
とができる。そのため特に基板の周辺部で起りがちな平
面度の悪化が少なく、ステッパー等に組み込んだ場合
は、解像不良による歩留りの低下を少なくすることが期
待できる。また、基板上に位置合わせ用のアライメント
マークが形成され、このマークの位置を検出する際も、
このマークがウェハ全面のどこにあっても、その部分の
たわみ角が小さくなるため、マークの位置ずれ（たわみ
による横ずれ）を小さく押えることができ、その結果、
アライメント精度、重ね合わせ精度の向上も期待でき
る。As described above, according to the present invention, it is possible to suppress the warpage and the amount of bending that occur when a substrate is vacuum-sucked, over the entire surface. Therefore, the flatness, which tends to occur especially in the peripheral portion of the substrate, is less likely to deteriorate, and when incorporated in a stepper or the like, it can be expected to reduce the yield decrease due to poor resolution. In addition, when an alignment mark for alignment is formed on the substrate and the position of this mark is detected,
Regardless of where this mark is placed on the entire surface of the wafer, the deflection angle of that portion is small, so the positional deviation of the mark (lateral deviation due to bending) can be suppressed, and as a result,
Alignment accuracy and overlay accuracy can also be expected to improve.
第１図（Ａ）、（Ｂ）は本発明の実施例による吸着装置
（ホルダー）の構造を示す平面図と断面図、第２図
（Ａ）、（Ｂ）は従来より考えられていた吸着装置の構
造を示す平面図と断面図、第３図（Ａ）、（Ｂ）は従来
より考えられていた他の吸着装置の構造を示す平面図と
断面図、第４図、第５図はそれぞれウェハを吸着したと
きに生じるたわみやそりの様子を誇張して示す図であ
る。 〔主要部分の符号の説明〕 １……ウェハホルダー、 ２……ウェハ受渡し用昇降機構、 1a……開口部、1b……スリーブ状孔、 1c……吸気孔、 10a、10b、10c、10d、10e、10f、10g、10h、10i……環
状凸部 ｗ……ウェハ1 (A) and 1 (B) are a plan view and a cross-sectional view showing the structure of an adsorption device (holder) according to an embodiment of the present invention, and FIGS. 2 (A) and 2 (B) are conventionally considered adsorption devices. 3A and 3B are plan views and cross-sectional views showing the structure of the device, and FIGS. 3A and 3B are plan views and cross-sectional views showing the structure of another adsorbing device which has been conventionally considered. It is a figure which exaggerates and shows the mode of the bending and the warp which arise when each wafer is adsorbed. [Description of symbols of main parts] 1 ... Wafer holder, 2 ... Wafer delivery lifting mechanism, 1a ... Opening portion, 1b ... Sleeve hole, 1c ... Intake hole, 10a, 10b, 10c, 10d, 10e, 10f, 10g, 10h, 10i …… Ring-shaped protrusion w …… Wafer
Claims (3)
さか、あるいはそれ以下の載置面を有し、該載置面のほ
ぼ全面には、部分的な凸部が複数形成され、該凸部の周
辺の凹部を雰囲気圧よりも減圧することによって、前記
基板の裏面を前記複数の凸部の上端部によって規定され
る基準面にならわせて吸着する装置において、前記複数
の凸部を、前記載置面のほぼ中央から所定の間隔で放射
方向に設けるとともに、少なくとも前記載置面の外周近
傍に位置する凸部の放射方向のピッチを、前記載置面の
内側部に位置する凸部の放射方向のピッチよりも小さく
したことを特徴とする基板の吸着装置。1. A flat surface having a mounting surface having a width substantially equal to or smaller than the outer shape of a substrate to be straightened, and a plurality of partial convex portions are formed on substantially the entire mounting surface. In the apparatus for adsorbing the back surface of the substrate by adhering the back surface of the substrate to a reference plane defined by the upper ends of the plurality of projections by reducing the pressure of the recesses around the projections to a lower atmospheric pressure, the plurality of projections Is provided in a radial direction at a predetermined interval from substantially the center of the mounting surface, and at least the radial pitch of the convex portions located near the outer periphery of the mounting surface is located on the inner side of the mounting surface. A substrate suction device characterized in that the pitch is smaller than the radial pitch of the convex portions.
周に位置する凸部は、前記雰囲気圧のリークを防止する
ために、前記最外周に沿って連続したリム状に形成さ
れ、該リム状に形成された最外周の第１凸部の内側に隣
接した第２凸部は、該最外周の第１凸部に沿って該第１
凸部とほぼ一定の間隔で配列されることを特徴とする請
求項第１項記載の装置。2. The convex portion located at the outermost periphery of the mounting surface among the plurality of convex portions is formed in a continuous rim shape along the outermost periphery in order to prevent leakage of the atmospheric pressure. And the second convex portion adjacent to the inner side of the outermost first convex portion formed in the rim has the first convex portion along the outermost peripheral first convex portion.
The device according to claim 1, wherein the device is arranged at a substantially constant interval with the convex portion.
はノッチを有するほぼ円形の半導体ウェハであり、前記
載置面上の第１凸部は、該半導体ウェハの中心から前記
切欠き、もしくはノッチまでの半径よりも小さな半径の
環状リムとして形成されることを特徴とする請求項第２
項記載の装置。3. The substrate is a substantially circular semiconductor wafer having a linear notch or notch in a part thereof, and the first convex portion on the mounting surface is the notch from the center of the semiconductor wafer. Or formed as an annular rim having a radius smaller than the radius to the notch.
Item.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63152693A JPH0831514B2 (en) | 1988-06-21 | 1988-06-21 | Substrate suction device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63152693A JPH0831514B2 (en) | 1988-06-21 | 1988-06-21 | Substrate suction device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8854397A Division JP2821678B2 (en) | 1997-04-07 | 1997-04-07 | Substrate suction device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01319964A JPH01319964A (en) | 1989-12-26 |
| JPH0831514B2 true JPH0831514B2 (en) | 1996-03-27 |
Family
ID=15546074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63152693A Expired - Lifetime JPH0831514B2 (en) | 1988-06-21 | 1988-06-21 | Substrate suction device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0831514B2 (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150036786A (en) | 2003-04-09 | 2015-04-07 | 가부시키가이샤 니콘 | Exposure method and apparatus, and device manufacturing method |
| TWI569308B (en) | 2003-10-28 | 2017-02-01 | 尼康股份有限公司 | Optical illumination device, exposure device, exposure method and device manufacturing method |
| TWI519819B (en) | 2003-11-20 | 2016-02-01 | 尼康股份有限公司 | Light beam converter, optical illuminating apparatus, exposure device, and exposure method |
| TWI412067B (en) | 2004-02-06 | 2013-10-11 | 尼康股份有限公司 | Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method |
| KR101524964B1 (en) | 2005-05-12 | 2015-06-01 | 가부시키가이샤 니콘 | Projection optical system, exposure apparatus and exposure method |
| JP5267029B2 (en) | 2007-10-12 | 2013-08-21 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and device manufacturing method |
| US8379187B2 (en) | 2007-10-24 | 2013-02-19 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
| US9116346B2 (en) | 2007-11-06 | 2015-08-25 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
| JP6001326B2 (en) | 2012-05-23 | 2016-10-05 | 東京エレクトロン株式会社 | Probe device and wafer mounting table for probe device |
| JP6496255B2 (en) * | 2016-01-29 | 2019-04-03 | 日本特殊陶業株式会社 | Substrate holding device |
| JP7194552B2 (en) * | 2017-11-21 | 2022-12-22 | 日本特殊陶業株式会社 | vacuum suction device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01208833A (en) * | 1988-02-16 | 1989-08-22 | Nec Corp | Production equipment for semiconductor device |
-
1988
- 1988-06-21 JP JP63152693A patent/JPH0831514B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01208833A (en) * | 1988-02-16 | 1989-08-22 | Nec Corp | Production equipment for semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01319964A (en) | 1989-12-26 |
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