JP4474927B2 - Exposure method, exposure apparatus, and device manufacturing method - Google Patents

Description

  The present invention relates to an exposure method, an exposure apparatus, and a device manufacturing method for exposing a substrate by irradiating a substrate with exposure light via a projection optical system and a liquid.

Semiconductor devices and liquid crystal display devices are manufactured by a so-called photolithography technique in which a pattern formed on a mask is transferred onto a photosensitive substrate. An exposure apparatus used in this photolithography process has a mask stage for supporting a mask and a substrate stage for supporting a substrate, and a mask pattern is transferred via a projection optical system while sequentially moving the mask stage and the substrate stage. It is transferred to the substrate. In recent years, in order to cope with higher integration of device patterns, higher resolution of the projection optical system is desired. The resolution of the projection optical system becomes higher as the exposure wavelength used is shorter and the numerical aperture of the projection optical system is larger. Therefore, the exposure wavelength used in the exposure apparatus is shortened year by year, and the numerical aperture of the projection optical system is also increasing. The mainstream exposure wavelength is 248 nm of the KrF excimer laser, but the 193 nm of the shorter wavelength ArF excimer laser is also being put into practical use. Also, when performing exposure, the depth of focus (DOF) is important as well as the resolution. The resolution R and the depth of focus δ are each expressed by the following equations.
R = k ₁ · λ / NA (1)
δ = ± k ₂ · λ / NA ² (2)
Here, λ is the exposure wavelength, NA is the numerical aperture of the projection optical system, and k ₁ and k ₂ are process coefficients. From the equations (1) and (2), it can be seen that the depth of focus δ becomes narrower when the exposure wavelength λ is shortened and the numerical aperture NA is increased in order to increase the resolution R.

If the depth of focus δ becomes too narrow, it becomes difficult to match the substrate surface with the image plane of the projection optical system, and the focus margin during the exposure operation may be insufficient. Therefore, as a method for substantially shortening the exposure wavelength and increasing the depth of focus, for example, a liquid immersion method disclosed in Patent Document 1 below has been proposed. In this immersion method, a space between the lower surface of the projection optical system and the substrate surface is filled with a liquid such as water or an organic solvent to form an immersion region, and the wavelength of exposure light in the liquid is 1 / n of that in air. (Where n is the refractive index of the liquid, which is usually about 1.2 to 1.6), the resolution is improved, and the depth of focus is expanded about n times.
International Publication No. 99/49504 Pamphlet

  By the way, as shown in the schematic diagram of FIG. 17, in addition to the exposure processing for the shot region SH near the center of the substrate P which is a wafer, the projection region 100 of the projection optical system is applied to the edge region E of the substrate P. In some cases, the P edge region E is exposed. For example, by performing exposure processing on the edge region E of the substrate P to form a pattern, it is possible to prevent the substrate P from coming into contact with the polishing surface of the CMP apparatus during the subsequent CMP (Chemical Mechanical Polishing) processing. In some cases, a small device pattern is also formed in the edge region E in order to effectively use the substrate P. In this case, a part of the projection region 100 protrudes outside the substrate P, and the exposure light is also applied to the substrate stage 120 that holds the substrate P. In the case of immersion exposure, a liquid immersion area is formed so as to cover the projection area 100. However, when the edge area E is exposed, a part of the liquid immersion area of the substrate P is exposed as in the projection area 100. It protrudes outside and is disposed on the substrate stage 120. When a part of the liquid immersion area is arranged on the substrate stage 120, there is a high possibility that the liquid remains on the substrate stage 120. For example, the environment (temperature, humidity) where the substrate P is placed fluctuates, and the substrate changes. Exposure accuracy deteriorates due to thermal deformation of P and the substrate stage 120, or fluctuations in the optical paths of various measurement light for measuring positional information of the substrate P and the like. Therefore, in order to prevent the liquid from remaining on the substrate stage 120, it is preferable that at least the surface in contact with the liquid in the substrate stage 120 is liquid repellent. By making the substrate stage 120 liquid-repellent, it becomes easy to collect even if liquid remains. However, when a liquid-repellent material is applied to make the substrate stage 120 liquid-repellent, or when the substrate stage 120 is formed of a liquid-repellent material, the liquid-repellent property deteriorates when exposed to exposure light. there's a possibility that. In particular, when, for example, a fluorine resin is used as the liquid repellent material and ultraviolet light is used as the exposure light, the liquid repellency of the substrate stage is likely to deteriorate (easily lyophilic). As a result, the liquid tends to remain on the substrate stage, leading to deterioration in exposure accuracy.

  The present invention has been made in view of such circumstances, and provides an exposure method, an exposure apparatus, and a device manufacturing method capable of preventing liquid from remaining on a substrate stage and maintaining good exposure accuracy. With the goal.

In order to solve the above-described problems, the present invention adopts the following configuration corresponding to FIGS. 1 to 16 shown in the embodiment.
An exposure method of the present invention is an exposure method in which exposure light (EL) is irradiated onto a substrate (P) through a projection optical system (PL) and a liquid (LQ) to expose the substrate (P). The exposure light (EL) is not irradiated to the outside of the substrate (P) during the exposure of P).
The device manufacturing method of the present invention is characterized by using the exposure method described above.

  According to the present invention, by preventing exposure light from being irradiated outside the substrate during exposure of the substrate, for example, the substrate stage and the substrate peripheral member holding the substrate are not irradiated with the exposure light. Therefore, it is possible to prevent the liquid repellency deterioration of the substrate stage and the substrate peripheral member due to the exposure light irradiation. Therefore, it is possible to prevent the liquid from remaining on the substrate stage or the substrate peripheral member, and even if it remains, the liquid can be collected smoothly. Therefore, it is possible to prevent exposure accuracy from being deteriorated due to the remaining liquid, and to manufacture a device that can exhibit desired performance.

An exposure method of the present invention is an exposure method in which exposure light (EL) is irradiated onto a substrate (P) through a projection optical system (PL) and a liquid (LQ) to expose the substrate (P). Among exposure light (EL) irradiated to the image plane side of the projection optical system (PL) during the exposure of P), the intensity of light irradiated to the outside of the effective area (92) on the substrate (P) is set. Further, it is characterized in that it is made weaker than the intensity of light irradiated on the effective area (92) on the substrate (P).
The device manufacturing method of the present invention is characterized by using the exposure method described above.

  According to the present invention, during the exposure of the substrate, out of the exposure light irradiated to the image plane side of the projection optical system, the intensity of the light irradiated outside the effective area on the substrate is set to the effective area on the substrate. By making the intensity lower than the intensity of the irradiated light, for example, the intensity of the exposure light for the substrate stage holding the substrate or the substrate peripheral member can be reduced. Therefore, it is possible to suppress the deterioration of the liquid repellency of the substrate stage and the substrate peripheral member due to the exposure light exposure. Therefore, it is possible to prevent the liquid from remaining on the substrate stage or the substrate peripheral member, and even if it remains, the liquid can be collected smoothly. Therefore, it is possible to prevent exposure accuracy from being deteriorated due to the remaining liquid, and to manufacture a device that can exhibit desired performance.

An exposure apparatus (EX) of the present invention is an exposure apparatus that irradiates a substrate (P) with exposure light (EL) through a projection optical system (PL) and a liquid (LQ) to expose the substrate (P). An optical member (72) for limiting the passage of at least part of the exposure light (EL) is provided so that the exposure light (EL) is not irradiated to the outside of the substrate (P).
The device manufacturing method of the present invention is characterized by using the above-described exposure apparatus (EX).

  According to the present invention, for example, a substrate stage holding the substrate or the periphery of the substrate is limited by restricting the passage of exposure light using an optical member so that exposure light is not irradiated outside the substrate during exposure of the substrate. The member is not irradiated with exposure light. Therefore, it is possible to prevent the liquid repellency deterioration of the substrate stage and the substrate peripheral member due to the exposure light irradiation. Therefore, it is possible to prevent the liquid from remaining on the substrate stage or the substrate peripheral member, and even if it remains, the liquid can be collected smoothly. Therefore, it is possible to prevent exposure accuracy from being deteriorated due to the remaining liquid, and to manufacture a device that can exhibit desired performance.

  According to the present invention, it is possible to prevent the liquid from remaining on the substrate stage by suppressing the deterioration of the liquid repellency on the substrate stage and the peripheral members of the substrate, so that immersion exposure can be performed with high exposure accuracy.

The exposure apparatus of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic block diagram showing an embodiment of the exposure apparatus of the present invention.
In FIG. 1, an exposure apparatus EX includes a mask stage MST that supports a mask M, a substrate stage PST that supports a substrate P, and an illumination optical system IL that illuminates the mask M supported by the mask stage MST with exposure light EL. A projection optical system PL that projects and exposes the pattern image of the mask M illuminated with the exposure light EL onto the substrate P supported by the substrate stage PST, and a control device CONT that controls the overall operation of the exposure apparatus EX. A storage device MRY that is connected to the control device CONT and stores various types of information related to exposure processing is provided. Further, the exposure apparatus EX includes a limiting device 70 that limits the passage of at least part of the exposure light EL. Limiting device 70 is provided in the vicinity of mask stage MST.

  The exposure apparatus EX of the present embodiment is an immersion exposure apparatus to which an immersion method is applied in order to improve the resolution by substantially shortening the exposure wavelength and substantially increase the depth of focus. A liquid supply mechanism 10 for supplying the liquid LQ to the substrate P, and a liquid recovery mechanism 20 for recovering the liquid LQ on the substrate P. While transferring at least the pattern image of the mask M onto the substrate P, the exposure apparatus EX uses a liquid LQ supplied from the liquid supply mechanism 10 to a part on the substrate P including the projection area AR1 of the projection optical system PL ( Locally) the immersion area AR2 is formed. Specifically, the exposure apparatus EX fills the liquid LQ between the optical element 35 on the front end side (image plane side) of the projection optical system PL and the surface of the substrate P, and the projection optical system PL and the substrate P The substrate P is exposed by projecting the pattern image of the mask M onto the substrate P by irradiating the exposure light EL through the liquid LQ and the projection optical system PL.

  In the present embodiment, the exposure apparatus EX is a scanning exposure apparatus (so-called so-called exposure apparatus EX) that exposes the pattern formed on the mask M onto the substrate P while synchronously moving the mask M and the substrate P in different directions (reverse directions) in the scanning direction. A case where a scanning stepper) is used will be described as an example. In the following description, the direction that coincides with the optical axis AX of the projection optical system PL is the Z-axis direction, the synchronous movement direction (scanning direction) between the mask M and the substrate P in the plane perpendicular to the Z-axis direction is the X-axis direction, A direction (non-scanning direction) perpendicular to the Z-axis direction and the X-axis direction is defined as a Y-axis direction. In addition, the rotation (inclination) directions around the X axis, the Y axis, and the Z axis are the θX, θY, and θZ directions, respectively. Here, the “substrate” includes a semiconductor wafer coated with a photoresist, which is a photosensitive material, and the “mask” includes a reticle on which a device pattern to be reduced and projected on the substrate is formed.

The illumination optical system IL converts the light beam (laser beam) LB emitted from the light source 1 into exposure light EL, and illuminates the mask M supported by the mask stage MST with the exposure light EL. As the exposure light EL emitted from the illumination optical system IL, for example, far ultraviolet light (g-line, h-line, i-line) and KrF excimer laser light (wavelength 248 nm) emitted from a mercury lamp, DUV light) and, ArF excimer laser light (wavelength 193 nm) and F ₂ laser beam (wavelength 157 nm) vacuum ultraviolet light (VUV light) is used. In this embodiment, ArF excimer laser light is used.

  In the present embodiment, pure water is used as the liquid LQ. Pure water is not only ArF excimer laser light, but also far ultraviolet light (DUV light) such as ultraviolet emission lines (g-line, h-line, i-line) emitted from mercury lamps and KrF excimer laser light (wavelength 248 nm). Can also be transmitted.

  The light source 1 in the present embodiment is an excimer laser light source that emits ArF excimer laser light (wavelength 193 nm). The controller CONT turns on / off the laser emission, the center wavelength, the spectral half width, the repetition frequency, and the like. Controlled.

  The illumination optical system IL includes a beam shaping optical system 2, an optical integrator 3, an illumination system aperture stop plate 4, relay optical systems 6, 8, a fixed mask blind 7A, a movable mask blind 7B, a mirror 9, a condenser lens 30, and the like. ing. In this embodiment, a fly-eye lens is used as the optical integrator 3, but a rod-type (internal reflection type) integrator, a diffractive optical element, or the like may be used. In the beam shaping optical system 2, the cross-sectional shape of the laser beam LB pulsed by the light source 1 is shaped so as to be efficiently incident on the optical integrator 3 provided behind the optical path of the laser beam LB. For example, a cylindrical lens and a beam expander are included. The optical integrator (fly eye lens) 3 is disposed on the optical path of the laser beam LB emitted from the beam shaping optical system 2, and is used to illuminate the mask M with a uniform illuminance distribution from a number of point light sources (light source images). A surface light source, that is, a secondary light source is formed.

  An illumination system aperture stop plate 4 made of a disk-like member is disposed in the vicinity of the exit-side focal plane of the optical integrator 3. The illumination system aperture stop plate 4 has an aperture stop (small aperture) composed of a normal circular aperture, for example, an aperture stop (small aperture) for reducing the σ value, which is a small circular aperture and is a coherence factor, at substantially equal angular intervals. σ stop), an annular aperture stop for annular illumination (annular stop), and a modified aperture stop (quadrupole illumination stop called SHRINC) in which a plurality of openings are arranged eccentrically for the modified light source method, etc. Has been placed. The illumination system aperture stop plate 4 is rotated by a driving device 31 such as a motor controlled by a control device CONT, whereby any aperture stop is selectively placed on the optical path of the exposure light EL. Be placed.

  A beam splitter 5 having a low reflectance and a high transmittance is disposed on the optical path of the exposure light EL that has passed through the illumination system aperture stop plate 4, and further, relays are provided on the rear optical path with mask blinds 7A and 7B interposed therebetween. Optical systems (6, 8) are arranged. The fixed mask blind 7A is disposed on a surface slightly defocused from the conjugate surface with respect to the pattern formation surface Ma of the mask M, and includes a rectangular opening 7K that defines the illumination area IA on the mask M. Further, a movable mask blind 7B having an opening having a variable position and width in the direction corresponding to the scanning direction (X-axis direction) and the non-scanning direction (Y-axis direction) orthogonal thereto in the vicinity of the fixed mask blind 7A. Is arranged, and the exposure area IA is further restricted via the movable mask blind 7B at the start and end of the scanning exposure, thereby preventing unnecessary exposure. The movable mask blind 7B is provided at a position optically conjugate with the pattern formation surface Ma of the mask M. As the movable mask blind 7B, for example, those disclosed in International Publication No. 99/63585 pamphlet can be used.

  On the other hand, on the optical path of the exposure light EL reflected by the beam splitter 5 in the illumination optical system IL, the condenser lens 32 and high sensitivity in the far ultraviolet region and high response to detect the pulsed light emission of the light source 1 are obtained. An integrator sensor 33 including a light receiving element such as a PIN photodiode having a frequency is disposed.

  The operation of the illumination optical system IL configured in this way will be briefly described. The laser beam LB pulsed from the light source 1 is incident on the beam shaping optical system 2 where it is efficiently applied to the optical integrator 3 at the rear. After the cross-sectional shape is shaped so as to be incident well, it enters the optical integrator 3. As a result, a secondary light source is formed on the exit-side focal plane of the optical integrator 3 (the pupil plane of the illumination optical system IL). The exposure light EL emitted from the secondary light source passes through one of the aperture stops on the illumination system aperture stop plate 4 and then enters the beam splitter 5 having high transmittance and low reflectivity. The exposure light EL transmitted through the beam splitter 5 passes through the first relay lens 6, passes through the rectangular opening of the fixed mask blind 7 </ b> A and the movable mask blind 7 </ b> B, passes through the second relay lens 8, and is reflected by the mirror 9. The optical path can be bent vertically downward. The exposure light EL whose optical path is bent by the mirror 9 passes through the condenser lens 30 and illuminates the illumination area IA on the mask M held by the mask stage MST with a uniform illuminance distribution.

  On the other hand, the exposure light EL reflected by the beam splitter 5 is received by the integrator sensor 33 through the condenser lens 32, and the photoelectric conversion signal of the integrator sensor 33 has a peak hold circuit and an A / D converter (not shown). The signal is supplied to the control device CONT via the signal processing device. In the present embodiment, the measurement value of the integrator sensor 33 is used for the exposure amount control and also for the calculation of the irradiation amount with respect to the projection optical system PL. This irradiation amount is the substrate reflectivity (this is the output of the integrator sensor). It can also be obtained based on the output of a reflectance monitor (not shown), and is used for calculating the amount of change in imaging characteristics due to illumination light absorption of the projection optical system PL. In the present embodiment, the dose is calculated based on the output of the integrator sensor 33 by the control device CONT at a predetermined interval, and the calculation result is stored in the storage device MRY as an irradiation history.

  The mask stage MST is movable while holding the mask M. For example, the mask M is fixed by vacuum suction (or electrostatic suction). The mask stage MST can be moved two-dimensionally in the plane perpendicular to the optical axis AX of the projection optical system PL, that is, the XY plane, and can be slightly rotated in the θZ direction by a mask stage driving device MSTD including a linear motor or the like. The mask stage MST is movable at a scanning speed specified in the X-axis direction, and the movement stroke in the X-axis direction is such that the entire surface of the mask M can cross at least the optical axis AX of the projection optical system PL. have.

  A movable mirror 41 is provided on the mask stage MST. A laser interferometer 42 is provided at a position facing the movable mirror 41. The position of the mask M on the mask stage MST in the two-dimensional direction and the rotation angle in the θZ direction (including rotation angles in the θX and θY directions in some cases) are measured in real time by the laser interferometer 42, and the measurement result is a control device. Output to CONT. The control device CONT controls the position of the mask M supported by the mask stage MST by driving the mask stage drive device MSTD based on the measurement result of the laser interferometer 42.

  The projection optical system PL projects and exposes the pattern of the mask M onto the substrate P at a predetermined projection magnification β, and includes a plurality of optical elements including an optical element (lens) 35 provided at the front end portion on the substrate P side. These optical elements are supported by a lens barrel PK. In the present embodiment, the projection optical system PL is a reduction system having a projection magnification β of, for example, 1/4 or 1/5. Note that the projection optical system PL may be either an equal magnification system or an enlargement system.

  The optical element 35 at the tip of the projection optical system PL of the present embodiment is exposed from the lens barrel PL, and the liquid LQ in the liquid immersion area AR2 comes into contact therewith. The optical element 35 is made of meteorite. Since the meteorite has a high affinity with water, the liquid LQ can be brought into close contact with almost the entire liquid contact surface 35 a of the optical element 35. That is, in the present embodiment, the liquid (water) LQ having a high affinity with the liquid contact surface 35a of the optical element 35 is supplied, and therefore the adhesion between the liquid contact surface 35a of the optical element 35 and the liquid LQ. The optical path between the optical element 35 and the substrate P can be reliably filled with the liquid LQ. The optical element 35 may be quartz having high affinity with water. Further, the liquid contact surface 35a of the optical element 35 may be subjected to a hydrophilization (lyophilic treatment) to further increase the affinity with the liquid LQ.

  The substrate stage PST can move while holding the substrate P, and includes an XY stage 53 and a Z tilt stage 52 mounted on the XY stage 53. The XY stage 53 is supported in a non-contact manner above the upper surface of the stage base 54 via a gas bearing (air bearing) which is a non-contact bearing (not shown). The XY stage 53 (substrate stage PST) is supported in a non-contact manner with respect to the upper surface of the stage base 54, and is in a plane perpendicular to the optical axis AX of the projection optical system PL by the substrate stage driving device PSTD including a linear motor and the like. That is, it can move two-dimensionally in the XY plane and can rotate in the θZ direction. A Z tilt stage 52 is mounted on the XY stage 53, and the substrate P is held on the Z tilt stage 52 by, for example, vacuum suction or the like via a substrate holder (not shown). The Z tilt stage 52 is movably provided in the Z-axis direction, the θX direction, and the θY direction. The substrate stage driving device PSTD is controlled by the control device CONT. The substrate stage PST controls the focus position (Z position) and tilt angle of the substrate P to adjust the surface of the substrate P to the image plane of the projection optical system PL by the autofocus method and the auto leveling method. Positioning is performed in the X-axis direction and the Y-axis direction.

  A plate member 60 is provided on the substrate stage PST so as to surround the substrate P held on the substrate stage PST. The plate member 60 is an annular member and is disposed outside the substrate P. The plate member 60 has a flat surface (flat portion) 60A having substantially the same height (level) as the surface of the substrate P held by the substrate stage PST. The flat surface 60A is disposed around the outside of the substrate P held by the substrate stage PST.

  The plate member 60 is formed of a material having liquid repellency such as polytetrafluoroethylene (Teflon (registered trademark)). Therefore, the flat surface 60A has liquid repellency. Note that the flat surface 60A may be made liquid repellent by, for example, forming the plate member 60 from a predetermined metal and applying a liquid repellent treatment to at least the flat surface 60A of the metal plate member 60. As the liquid repellent treatment of the plate member 60 (flat surface 60A), for example, a liquid repellent material such as a fluororesin material such as polytetrafluoroethylene or an acrylic resin material is applied, or the liquid repellent material is used. Apply a thin film. As the liquid repellent material for making it liquid repellent, a material that is insoluble in the liquid LQ is used. In addition, the application region of the liquid repellent material may be applied to the entire surface of the plate member 60, or may be applied only to a part of the region requiring liquid repellency such as the flat surface 60A. It may be.

  Since the plate member 60 having the flat surface 60A substantially flush with the surface of the substrate P is provided around the substrate P, even when the edge region E of the substrate P is subjected to immersion exposure, the liquid is placed under the projection optical system PL. The liquid immersion area AR2 can be satisfactorily formed on the image plane side of the projection optical system PL while maintaining LQ. Further, by making the flat surface 60A liquid repellent, the liquid LQ is prevented from flowing out to the outside of the substrate P (outside the flat surface 60A) during immersion exposure, and the liquid LQ is smoothly recovered even after immersion exposure. Thus, the liquid LQ can be prevented from remaining on the flat surface 60A.

  A movable mirror 43 is provided on the substrate stage PST (Z tilt stage 52). A laser interferometer 44 is provided at a position facing the movable mirror 43. The position and rotation angle of the substrate P on the substrate stage PST in the two-dimensional direction are measured in real time by the laser interferometer 44, and the measurement result is output to the control device CONT. The controller CONT positions the substrate P supported by the substrate stage PST by driving the substrate stage driving device PSTD including a linear motor or the like based on the measurement result of the laser interferometer 44.

  In addition, the exposure apparatus EX includes a focus detection system (not shown) that detects the position of the surface of the substrate P supported by the substrate stage PST. As the configuration of the focus detection system, for example, the one disclosed in JP-A-8-37149 can be used. The light reception result of the focus detection system is output to the control device CONT. Based on the detection result of the focus detection system, the control device CONT can detect the position information of the surface of the substrate P in the Z-axis direction and the tilt information of the substrate P in the θX and θY directions. The Z tilt stage 52 controls the focus position and tilt angle of the substrate P to adjust the surface of the substrate P to the image plane of the projection optical system PL by the auto focus method and the auto leveling method. Positioning is performed in the X-axis direction and the Y-axis direction. Needless to say, the Z tilt stage and the XY stage may be provided integrally.

  The liquid supply mechanism 10 supplies a predetermined liquid LQ onto the substrate P, and includes a first liquid supply unit 11 and a second liquid supply unit 12 capable of delivering the liquid LQ, and first and second liquid supplies. First and second supply pipes 11 </ b> A and 12 </ b> A that connect one end of each of the parts 11 and 12 are provided. Each of the first and second liquid supply units 11 and 12 includes a tank for storing the liquid LQ, a pressure pump, and the like.

  The liquid recovery mechanism 20 recovers the liquid LQ supplied onto the substrate P, and includes a liquid recovery unit 21 that can recover the liquid LQ, and a recovery tube 22 that connects one end of the liquid recovery unit 21 ( Recovery tubes 22A to 22D). The liquid recovery unit 21 includes, for example, a vacuum system (a suction device) such as a vacuum pump, a gas-liquid separator, and a tank that stores the recovered liquid LQ.

  A flow path forming member 80 is disposed in the vicinity of the optical element 35 at the end of the projection optical system PL. The flow path forming member 80 is an annular member provided so as to surround the optical element 35 above the substrate P (substrate stage PST). The flow path forming member 80 includes a first supply port 13 and a second supply port 14 that are provided above the substrate P (substrate stage PST) and are arranged to face the surface of the substrate P. The flow path forming member 80 has supply flow paths 82 (82A and 82B) therein. One end of the supply flow channel 82A is connected to the first supply port 13, and the other end is connected to the first liquid supply unit 11 through the first supply pipe 11A. One end of the supply flow path 82B is connected to the second supply port 14, and the other end is connected to the second liquid supply unit 12 through the second supply pipe 12A. Furthermore, the flow path forming member 80 includes a recovery port 23 provided above the substrate P (substrate stage PST) and disposed so as to face the surface of the substrate P. In the present embodiment, the flow path forming member 80 has four recovery ports 23A to 23D. Further, the flow path forming member 80 has a recovery flow path 84 (84A to 84D) corresponding to the recovery port 23 (23A to 23D) therein. One ends of the recovery channels 84A to 84D are connected to the recovery ports 23A to 23D, respectively, and the other ends are connected to the liquid recovery unit 21 via the recovery tubes 22A to 22D. In the present embodiment, the flow path forming member 80 constitutes a part of each of the liquid supply mechanism 10 and the liquid recovery mechanism 20.

  In the present embodiment, the first to fourth recovery tubes 22A to 22D are connected to one liquid recovery unit 21, but a plurality of liquid recovery units 21 corresponding to the number of recovery tubes (four in this case) are used. And each of the first to fourth recovery pipes 22A to 22D may be connected to each of the plurality of liquid recovery sections 21.

  The liquid supply operations of the first and second liquid supply units 11 and 12 are controlled by the control device CONT. The control device CONT can independently control the liquid supply amount per unit time on the substrate P by the first and second liquid supply units 11 and 12. The liquid LQ delivered from the first and second liquid supply units 11 and 12 is provided above the substrate P via the supply pipes 11A and 12A and the supply flow paths 82A and 82B of the flow path forming member 80. It is supplied onto the substrate P from the supply ports 13 and 14.

  The liquid recovery operation of the liquid recovery unit 21 is controlled by the control device CONT. The control device CONT can control the liquid recovery amount per unit time by the liquid recovery unit 21. The liquid LQ on the substrate P recovered from the recovery port 23 provided above the substrate P is recovered by the liquid recovery unit 21 via the recovery flow path 84 and the recovery pipe 22 of the flow path forming member 80.

  A liquid trap surface 81 having a predetermined length for capturing the liquid LQ is formed on the lower surface (surface facing the substrate P side) of the flow path forming member 80 with respect to the projection optical system PL from the recovery port 23. . The trap surface 81 is a surface inclined with respect to the XY plane, and is inclined so as to move away from the surface of the substrate P toward the outside with respect to the projection area AR1 (immersion area AR2). is doing. The trap surface 81 is subjected to lyophilic processing. Since the film (photoresist, antireflection film, etc.) applied to the surface of the substrate P is usually water repellant (liquid repellency), the liquid LQ flowing out of the recovery port 23 is captured by the trap surface 81. In addition, since the liquid LQ in this embodiment is water with a large polarity, as a hydrophilic treatment (lyophilic treatment) for the trap surface 81, this trap is formed by forming a thin film with a substance having a molecular structure with a large polarity such as alcohol. Hydrophilicity is imparted to the surface 81. That is, when water is used as the liquid LQ, it is desirable to dispose a trap surface 81 having a highly polar molecular structure such as an OH group on the surface.

  FIG. 2 shows the positional relationship between the first and second supply ports 13 and 14 and the first to fourth recovery ports 23A to 23D formed in the flow path forming member 80 and the projection area AR1 of the projection optical system PL. It is a top view. In FIG. 2, the projection area AR1 of the projection optical system PL is set to a rectangular shape having the longitudinal direction in the Y-axis direction (non-scanning direction). The immersion area AR2 filled with the liquid LQ is locally formed in a part of the substrate P substantially in the area surrounded by the four recovery ports 23A to 23D so as to include the projection area AR1. Is done. The first supply port 13 is provided on one side (−X side) in the scanning direction with respect to the projection area AR1, and the second supply port 14 is provided on the other side (+ X side). That is, the first and second supply ports 13 and 14 are arranged on both sides of the projection area AR1 with respect to the scanning direction (X direction). Each of the first and second supply ports 13 and 14 is formed in a slit shape having a predetermined length and having a substantially arc shape in a plan view. The lengths of the first and second supply ports 13 and 14 in the Y-axis direction are at least longer than the length of the projection area AR1 in the Y-axis direction. The liquid supply mechanism 10 can supply the liquid LQ simultaneously from the first and second supply ports 13 and 14 on both sides of the projection area AR1.

  The first to fourth recovery ports 23A to 23D are arranged so as to surround the supply ports 13 and 14 and the projection area AR1. Among the plurality (four) of recovery ports 23A to 23D, the first recovery port 23A and the third recovery port 23C are arranged on both sides of the projection area AR1 with respect to the X-axis direction, and the second recovery port 23B And the fourth recovery port 23D are arranged on both sides of the projection area AR1 with respect to the Y-axis direction. The supply ports 13 and 14 are arranged between the projection area AR1 and the recovery ports 23A and 23C. Each of the recovery ports 23A to 23D is formed in a slit shape having a predetermined length in a substantially arc shape in plan view. The lengths of the recovery ports 23A and 23C in the Y-axis direction are longer than the lengths of the supply ports 13 and 14 in the Y-axis direction. Each of the recovery ports 23B and 23D is formed to have substantially the same length as the recovery ports 23A and 23C. The first to fourth recovery ports 23A to 23D are connected to the liquid recovery unit 21 via the first to fourth recovery pipes 22A to 22D, respectively.

  In the present embodiment, each of the plurality of recovery ports 23A to 23D is formed to have substantially the same size (length), but may have different sizes. Further, the number of the recovery ports 23 is not limited to four, and any number can be provided as long as they are arranged so as to surround the projection area AR1 and the supply ports 13 and 14. Moreover, in FIG. 2, although the slit width of the supply ports (13, 14) and the slit width of the recovery ports (23A to 23D) are substantially the same, the slit width of the recovery ports (23A to 23D) is You may make it larger than the slit width of a supply port (13,14).

  FIG. 3 is a plan view of the Z tilt stage 52 of the substrate stage PST as viewed from above. The movable mirror 43 is arranged at two mutually perpendicular edges of the Z tilt stage 52 having a rectangular shape in plan view. Then, the substrate P is disposed at a substantially central portion on the Z tilt stage 52, and an annular plate member 60 having a flat surface 60A having substantially the same height as the surface of the substrate P is provided so as to surround the periphery of the substrate P. ing.

  A gap (gap) G is formed between the plate member 60 and the substrate P (edge portion EG). Since the gap G is, for example, about 0.1 to 1 mm, the surface tension of the liquid LQ. This prevents the liquid LQ from entering the gap G. Further, by making the side surface PB of the substrate P or the inner side surface 60B of the plate member 60 facing the side surface PB liquid-repellent to make it liquid repellent, the invasion of the liquid LQ into the gap G can be prevented even better.

  Note that not only the plate member 60 but also the upper surface of the substrate stage PST (Z tilt stage 52) may be liquid repellent. In this case, at least a region outside the substrate P held by the substrate stage PST on the upper surface of the substrate stage PST is made liquid repellent. By doing so, the outflow of the liquid LQ to the outside of the substrate stage PST during the immersion exposure can be suppressed, and the liquid LQ can be smoothly collected even after the immersion exposure, and the liquid LQ remains on the substrate stage PST. Can be prevented.

  The plate member 60 may be provided integrally with the substrate stage PST (Z tilt stage 52, substrate holder) or may be detachable from the substrate stage PST. Furthermore, the substrate stage PST may be formed so that the entire upper surface of the substrate stage PST is substantially the same height (level) as the substrate P without providing the annular plate member 60 on the substrate stage PST. Even in this case, a region outside the substrate P (region in contact with the liquid) on the upper surface of the substrate stage PST is made liquid repellent.

  A plurality of shot areas S1 to S24 are set on the substrate P, and the control device CONT sequentially exposes the plurality of shot areas S1 to S24 set on the substrate P. In the present embodiment, the control apparatus CONT monitors the output of the laser interferometer 56 so that the optical axis AX (projection area AR1) of the projection optical system PL travels along the wavy arrow 59 in FIG. The plurality of shot areas S1 to S24 are sequentially scanned and exposed while moving the XY stage 53) and moving the substrate P with respect to the exposure light EL. Specifically, after the exposure to one shot area is completed, the next shot area is moved to the scanning start position by the stepping movement of the substrate P, and each shot is performed while moving the substrate P by the step-and-scan method. The scanning exposure process for the area is sequentially performed.

  At this time, for example, when the shot area S4 lacking a part is exposed as usual, a part of the projection area AR1 protrudes to the outside of the substrate P as shown by a symbol AR1 ′ in FIG. The light EL is applied to a liquid repellent flat surface 60A provided outside the substrate P.

FIG. 4 is a cross-sectional view showing the limiting device 70 provided in the vicinity of the mask stage MST, and FIG. 5 is a plan view of the limiting device 70.
4 and 5, the limiting device 70 includes a base portion 71, a light shielding member (optical member) 72 that is movably provided on the base portion 71, and a drive device that moves the light shielding member 72 on the base portion 71. 73. Base portion 71 is connected to the lower surface of mask stage MST. Therefore, when the mask stage MST moves, the base unit 71 moves together with the mask stage MST.

  An opening K is provided at a substantially central portion of the mask stage MST, and the exposure light EL that has passed through the mask M can pass through the opening K. In addition, an opening 71A corresponding to the opening K of the mask stage MST is provided in a substantially central portion of the base 71, and the exposure light EL that has passed through the mask M can pass through the opening 71K. In the present embodiment, the base portion 71 has a substantially annular shape in plan view, but may have an arbitrary shape such as a rectangular shape. In addition, the opening 71A of the base portion 71 has a substantially circular shape. However, as long as the exposure light EL can pass through the opening 71A, in other words, as long as it is larger than the illumination area IA, the size and shape may be arbitrary.

  The light blocking member 72 restricts the passage of at least a part of the exposure light EL that passes through the opening 71A, and is constituted by a plate-like member, and is disposed in at least a part of the optical path of the exposure light EL. As a result, the passage of the exposure light EL corresponding to the partial area can be shielded almost completely (approximately 100%). As the light shielding member 72, for example, a member obtained by applying a light shielding material such as chrome to the surface of a metal plate member can be used. The light shielding member 72 has an inner edge portion 72A corresponding to the shape of the substrate P (the outer shape of the edge portion EG). In the present embodiment, the substrate P has a substantially circular shape, and the inner edge portion 72A has a substantially arc shape corresponding to the shape of the edge portion EG of the substrate P. The light shielding member 72 can be disposed on the inner edge 72A side in the opening 71A through which the exposure light EL passes. The curvature radius C1 of the inner edge portion 72A is set according to the radius C2 of the circular substrate P. Specifically, the inner edge portion 72A is formed such that the product of the radius of curvature C1 of the inner edge portion 72A and the projection magnification β of the projection optical system PL is substantially the same as the radius C2 of the substrate P.

  The driving device 73 is capable of moving the guide member 74 provided on the upper surface of the base portion 71, the guided portion 75 provided so as to be movable along the guide portion 74, and the light shielding member 72 with respect to the guided portion 75. And an actuator 76 to be supported. The guide portion 74 is provided in a substantially annular shape along the opening 71A. A gas bearing (air bearing) that is a non-contact bearing is interposed between the guide portion 74 and the guided portion 75, and the guide portion 74 supports the guided portion 75 in a non-contact manner. The guide portion 74 is provided with a linear motor stator, and the guided portion 75 is provided with a mover. Therefore, the light shielding member 72 connected to the guided portion 75 via the actuator 76 can move around the opening 71 </ b> A along the guide portion 74. In the present embodiment, the light blocking member 72 moves in the θZ direction along the guide portion 74 with the optical axis AX as the rotation center. Here, when the light shielding member 72 moves in the circumferential direction of the opening 71A (see arrow Y1 in FIG. 5), the light shielding member 72 always moves with its inner edge 72A directed toward the opening 71A (optical axis AX).

  The actuator 76 can move the light shielding member 72 along the XY plane with respect to the guided portion 75, and moves at least in the approaching and separating directions (see arrow Y2) with respect to the optical axis AX. Then, the light shielding member 72 moves in the approaching direction to the optical axis AX and is disposed in a part of the optical path of the exposure light EL (a part of the illumination area IA), whereby at least one of the exposure light EL (optical path). Restricts passage of light (shading).

  As shown in FIG. 4, the mask M includes a pellicle PE that covers the pattern formation surface Ma, and a pellicle frame PF that supports the pellicle PE on the lower surface of the mask M. The light blocking member 72 of the limiting device 70 moves at a position away from the pellicle PE below the pellicle PE (mask M).

  The pattern formation surface Ma of the mask M and the surface of the substrate P (image surface of the projection optical system PL) are at optically conjugate positions. Therefore, the light blocking member 72 provided in the vicinity of the mask M is at a position optically conjugate with the surface of the substrate P (surface to be exposed).

Next, a method for exposing the pattern image of the mask M onto the substrate P using the above-described exposure apparatus EX will be described.
The exposure apparatus EX in the present embodiment scans and exposes the pattern image of the mask M onto the substrate P while moving the mask M and the substrate P in the X-axis direction (scanning direction) with respect to the exposure light EL. During scanning exposure, a part of the pattern image of the mask M is projected onto the projection area AR1 of the projection optical system PL, and the mask M is in the −X direction (or + X direction) with respect to the projection optical system PL (exposure light EL). In synchronization with the movement at the velocity V, the substrate P moves in the + X direction (or -X direction) at the velocity β · V (β is the projection magnification) via the substrate stage PST (XY stage 53).

  When performing the exposure process, the controller CONT drives the liquid supply mechanism 10 and the liquid recovery mechanism 20 to supply and recover the liquid LQ. The liquid LQ delivered from each of the first and second liquid supply units 11 and 12 of the liquid supply mechanism 10 flows through the supply pipes 11A and 12A, and then is supplied to the supply flow path 82A formed inside the flow path forming member 80. , 82B to be supplied onto the substrate P. The liquid LQ supplied onto the substrate P flows under the projection optical system PL in accordance with the movement of the substrate P. For example, when the substrate P is moving in the + X direction during exposure of a certain shot area, the liquid LQ flows under the projection optical system PL in the same direction + X direction as the substrate P at substantially the same speed as the substrate P. On the other hand, the liquid LQ on the substrate P is sucked and collected from the collection port 23 of the liquid collection mechanism 20 and sent to the liquid collection unit 21 via the collection channel 84 and the collection tube 22.

  The exposure light EL emitted from the illumination optical system IL and passing through the mask M is irradiated to the image plane side of the projection optical system PL, whereby the pattern of the mask M is passed through the projection optical system PL and the liquid LQ in the liquid immersion area AR2. The substrate P is exposed. The control device CONT supplies the liquid LQ onto the substrate P by the liquid supply mechanism 10 and collects the liquid LQ on the substrate P by the liquid recovery mechanism 20, while the substrate P via the projection optical system PL and the liquid LQ. The substrate P is exposed by irradiating the exposure light EL thereon.

  In the present embodiment, during the exposure operation, the liquid supply mechanism 10 simultaneously supplies the liquid LQ onto the substrate P from both sides of the projection area AR1 through the supply ports 13 and 14. Thereby, the liquid LQ supplied onto the substrate P from the supply ports 13 and 14 spreads well between the lower end surface of the optical element 35 at the end portion of the projection optical system PL and the substrate P, and the liquid immersion area AR2 Are formed in a range wider than at least the projection area AR1. When supplying the liquid LQ to the substrate P from both sides in the scanning direction of the projection area AR1, the control device CONT controls the liquid supply operation of the first and second liquid supply units 11 and 12 of the liquid supply mechanism 10. With respect to the scanning direction, the liquid supply amount per unit time supplied from before the projection area AR1 may be set larger than the liquid supply amount supplied on the opposite side. For example, when the exposure process is performed while moving the substrate P in the + X direction, the control device CONT sets the liquid amount from the −X side (that is, the supply port 13) to the projection area AR1, and the + X side (that is, the supply port 14). On the other hand, when the exposure process is performed while moving the substrate P in the −X direction, the liquid amount from the + X side is made larger than the liquid amount from the −X side with respect to the projection area AR1. Here, for example, when the substrate P moves in the + X direction, the amount of liquid that moves to the + X side with respect to the projection area AR <b> 1 increases, and a large amount of liquid may flow out of the substrate P. However, since the liquid LQ moving to the + X side is captured by the trap surface 81 provided on the lower surface of the + X side of the flow path forming member 80, it is possible to suppress inconvenience of flowing out or scattering around the substrate P or the like. .

FIG. 6 is a schematic diagram showing a state in which the exposure light EL is irradiated onto the substrate P through the mask M and the projection optical system PL.
When exposing the shot area (S1 to S24) set in the central portion on the substrate P, the control device CONT passes the light shielding member 72 through the drive device 73 on the optical path of the exposure light EL, that is, from the illumination area IA. The light shielding member 72 is moved away from the optical path of the exposure light EL. Thereby, the partial pattern on the mask M according to the illumination area IA is exposed to the shot areas S1 to S24 on the substrate P.

  The illumination area IA of the exposure light EL on the mask M is set in a slit shape extending in the Y-axis direction within the pattern formation area PA on the mask M, and both ends in the Y-axis direction are on the light shielding band SB. Located in. Then, the partial pattern included in the illumination area IA on the mask M is projected onto the projection area AR1 of the projection optical system PL. The control device CONT moves the mask stage MST that supports the mask M with respect to the exposure light EL at a speed V in the −X direction while irradiating the illumination light IA on the mask M with the exposure light EL, so that the mask M The exposure light EL is sequentially irradiated on the entire surface of the pattern formation area PA. The substrate stage PST that supports the substrate P moves in the + X direction at a speed β · V (β is a projection magnification). When the mask stage MST supporting the mask M moves, as described above, the base portion 71 of the restriction device 70 also moves together. Therefore, the light shielding member 72 on the base portion 71 also moves in synchronization with the mask stage MST that supports the mask M.

  On the other hand, as shown in the schematic diagram of FIG. 6, when the edge region E of the substrate P is exposed, the exposure light EL is irradiated onto the flat surface 60A of the plate member 60 outside the substrate P during the exposure of the substrate P. In order not to be performed, the control device CONT moves the light shielding member 72 through the driving device 73 in a direction in which the light shielding member 72 approaches the illumination area IA. By arranging the light shielding member 72 in a part of the illumination area IA by the exposure light EL, a part of the exposure light EL is shielded. Thereby, the exposure light EL that does not hit the substrate P in the exposure light EL is blocked, and the flat light 60A on the outer side of the substrate P is not irradiated with the exposure light EL. Thereby, the deterioration of the liquid repellency of the flat surface 60A due to the irradiation with the exposure light EL can be suppressed.

  In the present embodiment, since the substrate P is configured to be scanned and exposed while moving with respect to the exposure light EL in synchronization with the mask M, the substrate P is provided movably on the base portion 71 that moves together with the mask M. The light shielding member 72 moves on the base portion 71 in accordance with the movement of the mask M and the substrate P so that the exposure light EL is not irradiated on the flat surface 60A outside the substrate P. During the scanning exposure, the control device CONT drives the driving device 73 based on the position information of the mask M by the laser interferometer 42 and the position information of the substrate P by the laser interferometer 44, thereby flattening the outside of the substrate P. The light blocking member 72 can be moved so that the exposure light EL is not irradiated onto the surface 60A. The light shielding member 72 may be moved based on either the position information of the mask M or the position information of the substrate P.

  Specifically, the position information of the edge portion EG of the substrate P (position information of the plate member 60) is stored in the storage device MRY before the immersion exposure process. Further, the arrangement (shot map) of the shot area on the substrate P is stored. The control device CONT exposes the vicinity of the edge of the substrate P based on the measurement results of the laser interferometers 42 and 44, the position information of the edge portion EG of the substrate P stored in the storage device MRY, and the shot map information. Then, the light shielding member 72 is moved via the driving device 73 so as to follow the movement of the mask stage MST so as to block the light not hitting the substrate P.

  After the immersion exposure, the control device CONT recovers the liquid LQ remaining on the substrate P or the substrate stage PST including the plate member 60 using the liquid recovery mechanism 20 or the like. Since the liquid repellency of the flat surface 60A of the plate member 60 and the upper surface of the substrate stage PST is maintained by not being irradiated with the exposure light EL, the liquid recovery mechanism 20 can recover the remaining liquid LQ satisfactorily. Can do. Further, the infiltration of the liquid LQ from the gap between the substrate P and the plate member 60 is also suppressed.

FIG. 7A is a plan view when the projection area AR1 is arranged in the edge area E of the substrate P, and FIG. 7B is an enlarged view of the main part of FIG. FIG. 8 is a diagram schematically showing a cross section of the edge region E of the substrate P.
As shown in FIG. 8, a resist region 92 provided with a photosensitive material (photoresist) 91 and a resist removal region 93 provided with no photosensitive material 91 are formed on the surface of the base material 90 constituting the substrate P. Is provided. The resist removal region 93 is set to a peripheral portion of the substrate P (base material 90) with a predetermined width (for example, about 3 mm). The resist region 92 is provided inside the resist removal region 93, and the substrate P (base material) 90) occupies most of the surface area. In addition, a protective layer called a top coat layer (film that protects the photosensitive material 91 from a liquid) 94 is provided on the upper layer of the photosensitive material 91, and the protective layer 94 is formed on the base material 90 and the base in the resist removal region 93. It is also provided on the side surface of the material 90. The resist area 92 is an effective area that can be exposed, and the resist removal area 93 is an ineffective area that cannot be exposed.

  When the photosensitive material 91 is provided on the base material 90, for example, it is often provided by a predetermined coating method such as a spin coating method. In that case, the photosensitive material 91 rises from the central portion at the peripheral edge of the base material 90. A phenomenon that a large amount is provided may occur. The photosensitive material 91 at the peripheral edge of the base material 90 is easily peeled off, and the peeled photosensitive material 91 becomes a foreign substance. When the foreign substance adheres to the substrate P, the pattern transfer accuracy is affected. Therefore, after the photosensitive material 91 is provided on the base material 90 by a predetermined coating method, the photosensitive material 91 at the peripheral edge is removed using, for example, a solvent before performing the exposure process. A resist removal region 93 is formed on the peripheral edge of the base material 90 (substrate P).

  Therefore, in the present embodiment, the light shielding member is arranged such that the image of the edge portion 72A of the light shielding member 72 is located between the inner edge (inner surface 60B) of the plate member 60 and the edge portion of the resist region (effective region) 92. 72 moves.

  In the present embodiment, the light shielding member 72 is provided in the vicinity of the mask M that is optically conjugate with the substrate P, but is disposed at a position slightly separated from the pattern formation surface Ma of the mask M. Therefore, the image on the substrate P of the light shielding portion 72 (inner edge portion 72A) is blurred. For example, as shown in FIG. 7, the control device CONT has an edge including the peripheral portion of the substrate P. When the region E is exposed, an image (defocused image) of the inner edge portion 72A of the light shielding member 72, that is, the edge portion 96 of the exposure light EL irradiated on the substrate P is positioned in the resist removal region 93 on the substrate P. As described above, the light shielding member 72 is used to block a part of the exposure light EL. Thereby, the blurred image is not exposed to the resist region 92 where the pattern is formed, and irradiation of the exposure light EL to the flat surface 60A can be reliably prevented.

  In the present embodiment, the edge portion 96 of the exposure light EL is an irradiation region 97 irradiated with the exposure light EL in a region corresponding to the projection region AR1, and a non-irradiation region where the exposure light EL is not irradiated by the light shielding member 72. It is preferable that a blur region irradiated with the exposure light EL on the substrate P (on the flat surface 60A) in the irradiation region 97 is within the resist removal region 93.

  Further, for example, when the distance between the mask M (a position optically conjugate with the substrate P) and the light shielding member 72 is large, the blur region becomes large, but the resist removal region is arranged so that the blur region is contained within the resist removal region 93. It is preferable to set the width of 93 or the distance between the mask M (a position optically conjugate with the substrate P) and the light shielding member 72.

  As described above, the flat surface 60A of the plate member 60 having liquid repellency provided around the substrate P by preventing the exposure light EL from being irradiated outside the substrate P during the exposure of the substrate P. Further, the exposure light EL is not irradiated on the upper surface of the substrate stage PST. Therefore, it is possible to prevent the liquid repellency of the plate member 60 (flat surface 60A) from being deteriorated due to the exposure light EL irradiation. Therefore, the liquid LQ can be prevented from remaining on the substrate stage PST and the plate member 60, and even if it remains, the liquid LQ can be smoothly collected. Therefore, it is possible to prevent deterioration in exposure accuracy due to the remaining liquid LQ, and it is possible to manufacture a device that can exhibit desired performance.

  In the present embodiment, since the resist region 92 has a circular shape corresponding to the shape of the substrate P, the exposure light EL can be obtained by setting the light shielding member 72 (inner edge portion 72A) to a shape corresponding to the outer shape of the substrate P. The edge portion 96 can be positioned in the resist removal region 93. However, when the substrate P and the resist region 92 have different shapes, for example, when the substrate P is circular and the resist region 92 is rectangular, the light shielding member 72. The (inner edge portion 72A) is preferably provided in a shape corresponding to the shape of the resist region 92. When the substrate P (base material 90) and the resist region 92 are approximately the same size, the radius of curvature C1 of the inner edge portion 72A of the light shielding member 72 may be set according to the radius C2 of the substrate P. However, when the resist region 92 is extremely small with respect to the substrate P (base material 90), the radius of curvature C1 of the inner edge portion 72A of the light shielding member 72 is set according to the radius of the resist region 92. Is preferred.

  In the above embodiment, the light shielding member 72 is moved in synchronization with the operation of the substrate P to prevent the exposure light EL from being irradiated to the outside (flat surface 60A) of the substrate P. In addition, the exposure light EL may not be irradiated outside the substrate P by stopping the emission of the exposure light EL based on the positional relationship between the exposure light EL and the edge portion EG of the substrate P.

  For example, as shown in the schematic diagram of FIG. 9A, during the scanning exposure of the substrate P, when the projection area AR1 irradiated with the exposure light EL is completely outside the edge portion EG of the substrate P, The control device CONT stops the emission of the light beam from the light source 1. Alternatively, a shutter is provided on the optical path of the exposure light EL such as inside the illumination optical system IL, and when the projection area AR1 comes out completely outside the edge portion EG of the substrate P, the optical path of the exposure light EL is blocked by the shutter. . Alternatively, the light shielding member 72 may be disposed on the optical path of the exposure light EL to shield it. Thereby, the irradiation amount of the exposure light EL irradiated to the flat surface 60A on the outer side of the substrate P can be suppressed, and the deterioration of the liquid repellency of the flat surface 60A can be suppressed. At this time, the control device CONT obtains position information of the edge portion EG of the substrate P based on the position measurement result of the substrate P by the laser interferometer 43, and based on the obtained position information of the edge portion EG, Set the timing to stop firing.

  In the embodiment described with reference to FIG. 9A, the flat surface 60A is slightly irradiated with the exposure light EL. Of the exposure light EL irradiated on the image plane side of the projection optical system PL, The amount of light (integrated light amount) of the exposure light EL irradiated to the outside of the resist region 92 on the substrate P may be made smaller than the amount of light (integrated light amount) of the exposure light EL irradiated to the resist region 92 on the substrate P. Therefore, the deterioration of the liquid repellency of the flat surface 60A can be suppressed.

  Alternatively, as shown in the schematic diagram of FIG. 9B, during scanning exposure of the substrate P, when at least a part of the projection area AR1 irradiated with the exposure light EL comes outside the edge portion EG of the substrate P. Moreover, the control device CONT stops the emission of the light beam from the light source 1. Alternatively, a shutter is provided on the optical path of the exposure light EL such as inside the illumination optical system IL, and the optical path of the exposure light EL is blocked by the shutter when the projection area AR1 comes out completely outside the edge portion of the substrate P. Alternatively, the light shielding member 72 may be disposed on the optical path of the exposure light EL to shield it. Thereby, since the exposure light EL is hardly irradiated to the flat surface 60A outside the substrate P, it is possible to suppress the deterioration of the liquid repellency of the flat surface 60A. At this time, the control device CONT obtains position information of the edge portion EG of the substrate P based on the position measurement result of the substrate P by the laser interferometer 43, and based on the obtained position information of the edge portion EG, Set the timing to stop firing.

  In the embodiment described with reference to FIG. 9B, the exposure light EL may not be irradiated to a part of the substrate P (edge region E). However, exposure can be performed by reducing the projection region AR1. A region where the light EL is not irradiated can be reduced, and an unexposed portion can be minimized.

  In the above embodiment, the light shielding member 72 has been described as being driven by a driving device including a linear motor. However, the light shielding member 72 is not limited to a linear motor, and for example, a stepping motor or a voice coil motor may be used. Absent. Further, for example, a robot arm may be used as the driving device, and the light shielding member 72 may be moved by the robot arm.

  In the above-described embodiment, the exposure conditions may be changed between when the shot areas S1 to S24 are exposed and when the edge area E is exposed. For example, when the edge region E is exposed in order to prevent the substrate P from hitting in the CMP process, the pattern transfer accuracy may be lower than that when the shot regions S1 to S24 are exposed. When exposing E, for example, the scanning speed can be made higher than when exposing the shot areas S1 to S24. Thereby, throughput can be improved.

Hereinafter, another embodiment of the light shielding member 72 (the restriction device 70) will be described. In the following description, the same or equivalent components as those in the above-described embodiment are denoted by the same reference numerals, and the description thereof is simplified or omitted.
In the above embodiment, the light shielding member 72 has been described so as to block light almost 100%. However, as the light shielding member 72, for example, light transmission that passes through a part of the exposure light EL as shown in FIG. The light shielding member 72 with a rate of 50% may be used. In this case, the exposure light EL is slightly irradiated on the flat surface 60A and the resist removal region 93. Of the exposure light EL irradiated on the image plane side of the projection optical system PL during the exposure of the substrate P. The intensity (illuminance) of the exposure light EL irradiated to the outside of the resist region 92 on the substrate P can be made lower than the intensity (illuminance) of the exposure light EL irradiated to the resist region 92 on the substrate P. Therefore, it is possible to suppress the deterioration of the liquid repellency of the flat surface 60A.
Further, as the light shielding member 72, in addition to a configuration in which a light shielding material such as chrome is applied to the entire surface of the metal plate-like member, a plate-like optical made of glass or the like as shown in FIG. The light blocking portion may be formed by providing a light blocking material in a partial region of the member 72. In the example shown in FIG. 10B, a light shielding material is provided on the outer edge portion 72B side of the surface of the optical member 72 to form a light shielding portion, and a light shielding material is provided in the vicinity of the inner edge portion 72A. A translucent part is formed.
As shown in FIG. 10C, the light shielding member 72 may be provided with a light transmittance distribution. In the example shown in FIG. 10C, the light transmittance is provided so as to gradually decrease from the inner edge portion 72A toward the outer edge portion 72B. Even in this case, the exposure light EL is slightly irradiated to the flat surface 60A and the resist removal region 93, but the exposure light EL irradiated to the image plane side of the projection optical system PL during the exposure of the substrate P. Among them, the intensity (illuminance) of the exposure light EL irradiated to the outside of the resist region 92 on the substrate P is made weaker than the intensity (illuminance) of the exposure light EL irradiated to the resist region 92 on the substrate P. Therefore, deterioration of the liquid repellency of the flat surface 60A can be suppressed.

As shown in FIG. 11A, the inner edge portion 72A of the light shielding member 72 may be linear. The inner edge portion 72A of the light shielding member 72 preferably has a shape corresponding to the outer shape of the substrate P (resist region 92). However, when the slit width of the projection region AR1 is sufficiently small, or the resist removal region 93. If the inner edge portion 72A is not formed in an arc shape, for example, a straight line shape, the edge portion 96 of the exposure light EL can be arranged in the resist removal region 93. Further, as long as the edge portion 96 of the exposure light EL can be disposed in the resist removal region 93, the inner edge portion 72A may have any shape, and may be, for example, a wave shape.
Further, as shown in FIG. 11B, the light shielding member 72 may be an annular member surrounding the illumination area IA on the mask M. Alternatively, as shown in FIG. 11C, a plurality (four in this case) of arc-shaped light shielding members 72 may be provided, and each may be provided to be movable.

  Furthermore, when the substrate P has a notch (notch, orientation flat, etc.), it is desirable to match the shape of the inner edge 72 of the light shielding member 2 with the notch.

  The position where the light shielding member 72 is provided may be a position optically conjugate with the surface of the substrate P or in the vicinity thereof. As shown in FIG. 12, the limiting device 70 including the light shielding member 72 is replaced with, for example, a movable mask blind. You may arrange | position in 7B vicinity. In the above embodiment, the light shielding member 72 is disposed close to the pattern formation surface Ma of the mask M (a position optically conjugate with the surface of the substrate P) due to the presence of the pellicle PE (pellicle frame PF) of the mask M. However, by arranging the light shielding member 72 in the vicinity of the movable mask blind 7B, the light shielding member 72 can be provided at a position closer to a position optically conjugate with the surface of the substrate P. Therefore, the blur region on the substrate P can be reduced.

  Here, in the example shown in FIG. 12, the base portion 71 of the restriction device 70 has a function as the fixed mask blind 7A, and the opening 71A (7K) of the base portion 71 defines the illumination area IA on the mask M. It is formed in a rectangular slit shape as specified.

  Alternatively, the light shielding member 72 can be provided on the aerial image forming surface by the relay lens in the illumination optical system IL. For example, the base portion 71 is provided on the substrate stage PST, and the light shielding member 72 is movable on the base portion 71. The light shielding member 72 may be provided in the vicinity of the substrate P. In this case, the base portion 71 moves together with the substrate stage PST, and the light shielding member 72 moves in synchronization with the substrate P to block light that does not strike the substrate P.

  Further, as the limiting device 70, a device having the configuration shown in FIG. 13 may be adopted. In the following description, the limiting device 70 shown in FIG. 13 is described as being disposed in the vicinity of the movable mask blind 7B. However, the position is optically conjugate with the surface of the substrate P other than the position in the vicinity of the movable mask blind 7B It may be arranged in the vicinity.

  In FIG. 13, the limiting device 70 is a light shielding member having a base portion 71 having a rectangular opening 71A (7K) that defines an illumination area IA on the mask M, and an inner edge portion 72A disposed in the opening 71A. 72. A plurality of light shielding members 72 are provided. In the present embodiment, one light shielding member 72 is provided on each side of the scanning direction with respect to the opening 71A. The light shielding member 72 is driven by a driving device 300 that drives the light shielding member 72 described later, thereby arranging the inner edge portion 72A in the opening 71A.

  When exposing the shot areas S1 to S24 at the center of the substrate P, as shown in FIG. 13A, the light shielding member 72 (inner edge portion 72A) is not disposed in the opening 71A. On the other hand, when exposing the edge region E of the substrate P, the control device CONT prevents the exposure light EL from being applied to the flat surface 60A of the plate member 60 according to the shape of the edge portion of the substrate P (plate member 60). Then, the light shielding member 72 is appropriately moved (deformed) to arrange the inner edge portion 72A in the opening portion 71A. 13B, the inner edge portion 72A of the light shielding member 72 disposed on the lower side of the opening 71A in the drawing is disposed in the opening 71A, and FIG. 13C illustrates the opening 71A in the drawing. An example is shown in which inner edge portions 72A of light shielding members 72 on both upper and lower sides are arranged. As described above, the control device CONT uses the light blocking member 72 to change the shape (size) of the opening portion 71A of the base portion 71 through which the exposure light EL passes according to the shape of the edge portion of the substrate P (plate member 60). ) Can be changed. Of course, it is also possible to change the shape of the edge portion 72A of the light shielding member 72 in accordance with the change in the positional relationship between the edge of the substrate P being exposed and the exposure light EL. In this embodiment, since the light shielding members 72 are provided on both sides in the scanning direction of the opening 71A, the edge portion 71Ac extending in the non-scanning direction of the opening 71A is a variable edge portion. The members 72 may be provided on both sides of the opening 71A in the non-scanning direction, and the edge portion 71Am extending in the scanning direction may be a variable edge portion.

  FIG. 14 is a schematic diagram illustrating a driving device 300 that deforms the edge portion 72A of the light shielding member 72, and FIG. 15 is a diagram schematically illustrating a configuration of the light shielding member 72 according to the present embodiment. As shown in FIG. 14, the light shielding member 72 is composed of a plurality of blade members (72S, 72T) connected by pin bonding through a loose hole, and includes a first blade member 72S and a second blade member 72T. Are connected alternately. The driving device 300 includes a plurality of actuators 321 for moving each pin joint between the first blade member 72S and the second blade member 72T. Each actuator 321 is connected to each corresponding pin joint by a bar-shaped member 322.

  As shown in FIG. 15, the first blade member 72S and the second blade member 72T have substantially the same configuration, but the edge portion opposite to the actuator side, that is, the edge portion forming the inner edge portion 72A. The configuration is different. Specifically, the edge tip portions of the first blade member 72S and the second blade member 72T are second surfaces forming a predetermined angle θ between the first surface perpendicular to the optical axis AX and the optical axis AX. In the first blade member 72S, the first surface, which is a contact surface with the second blade member 72T, faces the mask side. In the second blade member 72T, the first surface, which is a contact surface with the first blade member 72S, faces the light source side.

  Therefore, in a state where they are connected to each other, the edge tip of the first blade member 72S and the edge tip of the second blade member 72T extend linearly or curvedly along the same plane orthogonal to the optical axis AX. Become. Thus, by driving each actuator 321, the inner edge portion 72A formed by the edge tip of the first blade member 72S and the edge tip of the second blade member 72T is formed in a desired linear or curved shape. The shape and size of the opening 71A through which the exposure light EL passes can be controlled.

  As described above, the liquid LQ in the present embodiment is composed of pure water. Pure water has an advantage that it can be easily obtained in large quantities at a semiconductor manufacturing factory or the like, and has no adverse effect on the photoresist, optical element (lens), etc. on the substrate P. In addition, pure water has no adverse effects on the environment, and since the impurity content is extremely low, it can be expected to clean the surface of the substrate P and the surface of the optical element provided on the front end surface of the projection optical system PL. . When the purity of pure water supplied from a factory or the like is low, the exposure apparatus may have an ultrapure water production device.

  The refractive index n of pure water (water) with respect to the exposure light EL having a wavelength of about 193 nm is said to be approximately 1.44. When ArF excimer laser light (wavelength 193 nm) is used as the light source of the exposure light EL, On the substrate P, the wavelength is shortened to 1 / n, that is, about 134 nm, and a high resolution can be obtained. Furthermore, since the depth of focus is enlarged by about n times, that is, about 1.44 times compared with that in the air, the projection optical system PL can be used when it is sufficient to ensure the same depth of focus as that in the air. The numerical aperture can be further increased, and the resolution is improved in this respect as well.

  As described above, when the liquid immersion method is used, the numerical aperture NA of the projection optical system may be 0.9 to 1.3. When the numerical aperture NA of the projection optical system becomes large in this way, the imaging performance may deteriorate due to the polarization effect with random polarized light conventionally used as exposure light. desirable. In that case, linearly polarized illumination is performed in accordance with the longitudinal direction of the line pattern of the mask (reticle) line-and-space pattern. From the mask (reticle) pattern, the S-polarized light component (TE-polarized light component), that is, the line pattern It is preferable that a large amount of diffracted light having a polarization direction component is emitted along the longitudinal direction. When the space between the projection optical system PL and the resist applied on the surface of the substrate P is filled with a liquid, the space between the projection optical system PL and the resist applied on the surface of the substrate P is filled with air (gas). Compared with the case where the transmittance of the diffracted light of the S-polarized component (TE-polarized component) contributing to the improvement of the contrast is high on the resist surface, the numerical aperture NA of the projection optical system exceeds 1.0. Even in this case, high imaging performance can be obtained. Further, it is more effective to appropriately combine a phase shift mask or an oblique incidence illumination method (particularly a die ball illumination method) or the like according to the longitudinal direction of the line pattern as disclosed in JP-A-6-188169.

  Further, for example, an ArF excimer laser is used as the exposure light, and a fine line and space pattern (for example, a line and space of about 25 to 50 nm) is formed on the substrate by using the projection optical system PL with a reduction magnification of about 1/4. When exposing on P, depending on the structure of the mask M (for example, the fineness of the pattern and the thickness of chrome), the mask M acts as a polarizing plate due to the Wave guide effect, and the P-polarized component (TM polarized light) that lowers the contrast. Since the diffracted light of the S-polarized component (TE-polarized component) is emitted from the mask M more than the diffracted light of the component), it is desirable to use the above-mentioned linearly polarized illumination, but the mask M is illuminated with random polarized light Even when the numerical aperture NA of the projection optical system PL is as large as 0.9 to 1.3, high resolution performance can be obtained. When an extremely fine line-and-space pattern on the mask M is exposed on the substrate P, the P-polarized component (TM-polarized component) is larger than the S-polarized component (TE-polarized component) due to the Wire Grid effect. For example, an ArF excimer laser is used as exposure light, and a line and space pattern larger than 25 nm is exposed on the substrate P using the projection optical system PL with a reduction magnification of about 1/4. In this case, since the diffracted light of the S polarization component (TE polarization component) is emitted from the mask M more than the diffracted light of the P polarization component (TM polarization component), the numerical aperture NA of the projection optical system PL is 0.9. High resolution performance can be obtained even when the value is as large as -1.3.

  Furthermore, not only linearly polarized illumination (S-polarized illumination) matched to the longitudinal direction of the line pattern of the mask (reticle) but also a circle centered on the optical axis as disclosed in JP-A-6-53120. A combination of the polarization illumination method that linearly polarizes in the tangential (circumferential) direction and the oblique incidence illumination method is also effective. In particular, when a mask (reticle) pattern includes not only a line pattern extending in a predetermined direction but also a plurality of line patterns extending in different directions, the same is disclosed in Japanese Patent Laid-Open No. 6-53120. In addition, by using the polarization illumination method that linearly polarizes in the tangential direction of the circle centered on the optical axis and the annular illumination method, high imaging performance can be obtained even when the numerical aperture NA of the projection optical system is large. it can.

  In the present embodiment, an optical element 35 is attached to the tip of the projection optical system PL, and the optical characteristics of the projection optical system PL, for example, aberration (spherical aberration, coma aberration, etc.) can be adjusted by this lens. The optical element attached to the tip of the projection optical system PL may be an optical plate used for adjusting the optical characteristics of the projection optical system PL. Alternatively, it may be a plane parallel plate that can transmit the exposure light EL.

  When the pressure between the optical element at the tip of the projection optical system PL generated by the flow of the liquid LQ and the substrate P is large, the optical element is not exchangeable but the optical element is moved by the pressure. It may be fixed firmly so that there is no.

  In the present embodiment, the space between the projection optical system PL and the surface of the substrate P is filled with the liquid LQ. However, for example, the liquid with the cover glass made of a plane-parallel plate attached to the surface of the substrate P is used. The structure which satisfy | fills LQ may be sufficient.

Note that the liquid LQ of the present embodiment is water, but may be a liquid other than water. For example, when the light source of the exposure light EL is an F ₂ laser, the F ₂ laser light does not pass through water. The liquid LQ may be, for example, a fluorinated fluid such as perfluorinated polyether (PFPE) or fluorinated oil that can transmit F ₂ laser light. In this case, the lyophilic treatment is performed by forming a thin film with a substance having a molecular structure having a small polarity including fluorine, for example, at a portion in contact with the liquid LQ. In addition, as the liquid LQ, the liquid LQ is transmissive to the exposure light EL, has a refractive index as high as possible, and is stable with respect to the photoresist applied to the projection optical system PL and the surface of the substrate P (for example, Cedar). Oil) can also be used. Also in this case, the surface treatment is performed according to the polarity of the liquid LQ to be used.

  The substrate P in each of the above embodiments is not only a semiconductor wafer for manufacturing a semiconductor device, but also a glass substrate for a display device, a ceramic wafer for a thin film magnetic head, or an original mask or reticle used in an exposure apparatus. (Synthetic quartz, silicon wafer) or the like is applied.

  As the exposure apparatus EX, in addition to the step-and-scan type scanning exposure apparatus (scanning stepper) that scans and exposes the pattern of the mask M by moving the mask M and the substrate P synchronously, the mask M and the substrate P Can be applied to a step-and-repeat type projection exposure apparatus (stepper) in which the pattern of the mask M is collectively exposed while the substrate P is stationary and the substrate P is sequentially moved stepwise. The present invention can also be applied to a step-and-stitch type exposure apparatus that partially transfers at least two patterns on the substrate P.

  The present invention can also be applied to a twin stage type exposure apparatus disclosed in Japanese Patent Application Laid-Open No. 10-163099, Japanese Patent Application Laid-Open No. 10-214783, and Japanese Translation of PCT International Publication No. 2000-505958.

  In the above-described embodiment, an exposure apparatus that locally fills the liquid between the projection optical system PL and the substrate P is employed. However, the present invention is disclosed in Japanese Patent Laid-Open No. 6-124873. It is also applicable to an immersion exposure apparatus that moves a stage holding a substrate to be exposed in a liquid tank.

  The type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern on the substrate P, but an exposure apparatus for manufacturing a liquid crystal display element or a display, a thin film magnetic head, an image sensor (CCD). ) Or an exposure apparatus for manufacturing reticles or masks.

  When using a linear motor (see USP5,623,853 or USP5,528,118) for the substrate stage PST and mask stage MST, use either an air levitation type using air bearings or a magnetic levitation type using Lorentz force or reactance force. Also good. Each stage PST, MST may be a type that moves along a guide, or may be a guideless type that does not have a guide.

  As a driving mechanism for each stage PST, MST, a planar motor that drives each stage PST, MST by electromagnetic force with a magnet unit having a two-dimensionally arranged magnet and an armature unit having a two-dimensionally arranged coil facing each other is provided. It may be used. In this case, either one of the magnet unit and the armature unit may be connected to the stages PST and MST, and the other of the magnet unit and the armature unit may be provided on the moving surface side of the stages PST and MST.

As described in JP-A-8-166475 (USP 5,528,118), the reaction force generated by the movement of the substrate stage PST is not transmitted to the projection optical system PL, but mechanically using a frame member. You may escape to the floor (ground).
As described in JP-A-8-330224 (US S / N 08 / 416,558), a frame member is used so that the reaction force generated by the movement of the mask stage MST is not transmitted to the projection optical system PL. May be mechanically released to the floor (ground).

  As described above, the exposure apparatus EX according to the present embodiment maintains various mechanical subsystems including the respective constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Manufactured by assembling. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  As shown in FIG. 16, a microdevice such as a semiconductor device includes a step 201 for designing a function / performance of the microdevice, a step 202 for producing a mask (reticle) based on the design step, and a substrate as a substrate of the device. Manufacturing step 203, exposure processing step 204 for exposing the mask pattern onto the substrate by the exposure apparatus EX of the above-described embodiment, device assembly step (including dicing process, bonding process, packaging process) 205, inspection step 206, etc. It is manufactured after.

It is a schematic block diagram which shows one Embodiment of the exposure apparatus of this invention. It is a schematic plan view which shows a liquid supply mechanism and a liquid recovery mechanism. It is a top view of a substrate stage. It is sectional drawing which shows the limiting apparatus which concerns on this invention. It is a top view which shows the limiting apparatus which concerns on this invention. It is a perspective view which shows a mode that a part of exposure light is interrupted | blocked by the light shielding member which concerns on this invention. It is a top view which shows a mode that exposure light is not irradiated to the outer side of a board | substrate by the light shielding member. It is sectional drawing of the edge area | region of a board | substrate. It is a top view which shows an example of the exposure operation | movement which concerns on this invention. It is a figure which shows another embodiment of the light-shielding member which concerns on this invention. It is a figure which shows another embodiment of the light-shielding member which concerns on this invention. It is a schematic block diagram which shows another embodiment of the exposure apparatus of this invention. It is a figure which shows another embodiment of the limiting apparatus which concerns on this invention. It is a figure which shows another embodiment of the limiting apparatus which concerns on this invention. It is a figure which shows another embodiment of the limiting apparatus which concerns on this invention. It is a flowchart figure which shows an example of the manufacturing process of a semiconductor device. It is a schematic diagram for demonstrating the conventional subject.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Light source, 10 ... Liquid supply mechanism, 20 ... Liquid recovery mechanism, 60 ... Plate member,
60A ... Flat surface (flat part), 70 ... Limiting device, 72 ... Light shielding member (optical member),
92 ... resist region (effective region), 93 ... resist removal region (non-effective region),
96 ... edge part (of exposure light), AR1 ... projection area, AR2 ... liquid immersion area, E ... edge area, EG ... edge part (substrate), EL ... exposure light, EX ... exposure apparatus, IL ... illumination optical system ,
LQ ... Liquid, P ... Substrate, PL ... Projection optical system, PST ... Substrate stage

Claims (19)

In an exposure method in which exposure light is irradiated onto a substrate via a projection optical system and a liquid, and the substrate is exposed,
An exposure method characterized in that the exposure light is not irradiated on a liquid-repellent surface of a member outside the substrate during the exposure of the substrate.   2. The exposure method according to claim 1, wherein light that does not strike the substrate is blocked out of the exposure light.   The substrate is scanned and exposed while relatively moving the substrate and the exposure light, and the exposure light is emitted based on a positional relationship between the exposure light and an edge portion of the substrate during the scanning exposure of the substrate. 3. The exposure method according to claim 1, wherein the exposure is stopped. In order to suppress the outer liquid repellency of the deterioration of the surface of the member of the substrate, any one of claims 1 to 3, wherein the exposure light to the outside of the substrate is characterized in that so as not irradiated Exposure method. Outside of members of the substrate is a liquid repellent surface thereof, and any one of claims 1 to 4, characterized in that the flat portion of substantially the same height as the surface of the substrate is formed The exposure method as described. 6. The exposure method according to claim 5 , wherein the liquid is locally held on the image plane side of the projection optical system so that a liquid immersion region is formed on a part of the substrate. In an exposure method in which exposure light is irradiated onto a substrate via a projection optical system and a liquid, and the substrate is exposed,
During exposure of the substrate, of the exposure light irradiated on the image plane side of the projection optical system, the intensity of light irradiated to the liquid repellency of the surface of the outer member of the effective region on the substrate, wherein An exposure method characterized by making the intensity lower than the intensity of light applied to an effective area on a substrate. Device manufacturing method comprising using the exposure method of any one of claims 1 to claim 7. In an exposure apparatus that irradiates exposure light onto a substrate via a projection optical system and a liquid, and exposes the substrate,
An exposure apparatus comprising: an optical member that restricts passage of at least part of the exposure light so that the liquid-repellent surface of the member outside the substrate is not irradiated with the exposure light. The exposure apparatus according to claim 9 , wherein the optical member is disposed in the vicinity of the substrate, in a position optically conjugate with the surface of the substrate, or in the vicinity thereof. The substrate is scanned and exposed by moving relative to the exposure light in synchronization with a mask, and the optical member moves in synchronization with at least one of the mask and the substrate. Item 11. The exposure apparatus according to Item 9 or 10 . Outer member of said substrate is disposed around the substrate, the surface of liquid-repellent, and any of claims 9-11, characterized in that it has a flat portion of substantially the same height as the surface of the substrate An exposure apparatus according to claim 1. A non-effective area having a predetermined width is set at a peripheral edge on the substrate, and the optical member is arranged such that an edge of the exposure light is positioned in the non-effective area when the peripheral edge on the substrate is exposed. The exposure apparatus according to any one of claims 9 to 12 , wherein a part of the exposure light is blocked.   An exposure apparatus that exposes a substrate with exposure light through a liquid,
  A member having a liquid-repellent surface disposed outside the substrate;
  An exposure apparatus comprising: a control device that restricts exposure of the exposure light to the liquid-repellent surface.   An optical member that restricts passage of at least part of the exposure light;
  The exposure apparatus according to claim 14, wherein the controller moves the optical member so that the exposure light is not irradiated onto the liquid-repellent surface.   15. The exposure apparatus according to claim 14, wherein the control device stops emitting the exposure light so that the exposure light is not irradiated onto the liquid-repellent surface.   The exposure apparatus according to claim 14, wherein an intensity of the exposure light applied to a part of the liquid repellent surface is smaller than an intensity of the exposure light applied to an effective area of the substrate.   The exposure apparatus according to claim 14, wherein the liquid repellent surface includes a surface of a liquid repellent film. A device manufacturing method using the exposure apparatus according to any one of claims 9 to 18 .

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