JP2005310933A - Substrate-holding member, aligner, and device manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate-holding member and an aligner which can maintain exposure accuracy and measurement accuracy by suppressing the temperature change of a fluid, and the generation of temperature distribution, when applying immersion method. <P>SOLUTION: A substrate holder PH is used in the aligner for exposing a substrate P, by irradiating the exposure light on the substrate P via a projection optical system PL and fluid LQ. The substrate holder PH is coated by a functional layer 35 composed of a material which can be processed, in such a way that a contact surface 34A in contact with substrate P possesses profile irregularity higher than that of the substrate PB of the substrate holder PH. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a substrate holding member used in an exposure apparatus that exposes a substrate through a projection optical system and a liquid, an exposure apparatus, and a device manufacturing method.

Semiconductor devices and liquid crystal display devices are manufactured by a so-called photolithography technique in which a pattern formed on a mask is transferred onto a photosensitive substrate. An exposure apparatus used in this photolithography process has a mask stage for holding a mask and a substrate stage for holding the substrate via a substrate holding member, and the mask pattern is generated while sequentially moving the mask stage and the substrate stage. The image is transferred to the substrate via the projection optical system. In recent years, in order to cope with higher integration of device patterns, higher resolution of the projection optical system is desired. The resolution of the projection optical system becomes higher as the exposure wavelength used is shorter and the numerical aperture of the projection optical system is larger. Therefore, the exposure wavelength used in the exposure apparatus is shortened year by year, and the numerical aperture of the projection optical system is also increasing. The mainstream exposure wavelength is 248 nm of the KrF excimer laser, but the 193 nm of the shorter wavelength ArF excimer laser is also being put into practical use. Also, when performing exposure, the depth of focus (DOF) is important as well as the resolution. The resolution R and the depth of focus δ are each expressed by the following equations.
R = k ₁ · λ / NA (1)
δ = ± k ₂ · λ / NA ² (2)
Here, λ is the exposure wavelength, NA is the numerical aperture of the projection optical system, and k ₁ and k ₂ are process coefficients. From equations (1) and (2), it can be seen that if the exposure wavelength λ is shortened and the numerical aperture NA is increased to increase the resolution R, the depth of focus δ becomes narrower.

If the depth of focus δ becomes too narrow, it becomes difficult to match the substrate surface with the image plane of the projection optical system, and the focus margin during the exposure operation may be insufficient. Therefore, as a method for substantially shortening the exposure wavelength and increasing the depth of focus, for example, a liquid immersion method disclosed in Patent Document 1 below has been proposed. In this immersion method, a space between the lower surface of the projection optical system and the substrate surface is filled with a liquid such as water or an organic solvent to form an immersion region, and the wavelength of exposure light in the liquid is 1 / n of that in air. (Where n is the refractive index of the liquid, which is usually about 1.2 to 1.6), the resolution is improved, and the depth of focus is expanded about n times.
International Publication No. 99/49504 Pamphlet

  By the way, in the immersion method, the substrate is heated by exposure light irradiation, and the heat may cause a temperature change or a temperature distribution in the liquid in the immersion region on the substrate. Since the temperature change and temperature distribution of the liquid cause a change in the refractive index of the liquid, the imaging characteristics through the liquid of the projection optical system are affected, and there is a possibility that the pattern cannot be formed on the substrate with high accuracy. Further, even when various optical measurements are performed via a liquid, there is a possibility that the measurement cannot be performed with high accuracy if a temperature change or a temperature distribution of the liquid occurs.

  The present invention has been made in view of such circumstances, and in the case of applying the liquid immersion method, the substrate holding member that can suppress the temperature change and temperature distribution of the liquid and maintain the exposure accuracy and the measurement accuracy. An object of the present invention is to provide an exposure apparatus and a device manufacturing method.

In order to solve the above-described problems, the present invention adopts the following configuration corresponding to FIGS. 1 to 9 shown in the embodiment.
The substrate holding member (PH) of the present invention exposes the substrate (P) by irradiating the substrate (P) with exposure light (EL) via the projection optical system (PL) and the liquid (LQ). In the substrate holding member for holding the substrate (P) used in (EX), the contact surface (34A) with the substrate (P) is higher than the base material (PB) of the substrate holding member (PH). It is covered with a layer (35) of a material that can be processed with surface accuracy.

  According to the present invention, the surface accuracy of the contact surface can be improved by covering and processing the contact surface of the substrate holding member with the substrate with the layer of material that can be processed with high surface accuracy. And the contact area of a board | substrate holding member and a board | substrate can be increased by supporting a board | substrate with the contact surface which has the high surface precision. Therefore, the thermal conductivity (heat transfer coefficient) between the substrate holding member and the substrate can be improved. Therefore, even if the substrate is heated by exposure light irradiation, the heat of the substrate can be efficiently released to the substrate holding member side, so that the temperature change and temperature distribution of the liquid in the immersion area on the substrate by the substrate heat Can be suppressed. Therefore, exposure accuracy and measurement accuracy can be maintained.

  The substrate holding member (PH) of the present invention exposes the substrate (P) by irradiating the substrate (P) with exposure light (EL) via the projection optical system (PL) and the liquid (LQ). In the substrate holding member for holding the substrate (P) used in (EX), the surface (PBS) of the substrate holding member (PH) including the contact surface (34A) with the substrate (P) is held by the substrate. It is characterized by being covered with a layer (35) of a material having a higher thermal conductivity than the base material (PB) of the member (PH).

  According to the present invention, by covering the surface of the substrate holding member including the contact surface of the substrate holding member with the substrate with the layer of the material having high thermal conductivity, the thermal conductivity between the substrate holding member and the substrate ( Heat transfer coefficient). Therefore, even if the substrate is heated by exposure light irradiation, the heat of the substrate can be efficiently released to the substrate holding member side, so that the temperature change and temperature distribution of the liquid in the immersion area on the substrate by the substrate heat Can be suppressed. Therefore, exposure accuracy and measurement accuracy can be maintained.

  The substrate holding member (PH) of the present invention exposes the substrate (P) by irradiating the substrate (P) with exposure light (EL) via the projection optical system (PL) and the liquid (LQ). In the substrate holding member for holding the substrate (P) used in (EX), the contact surface (34A) with the substrate (P) is softer than the base material (PB) of the substrate holding member (PH). It is characterized by being covered with a layer of metal material (35 ').

  According to the present invention, the contact surface of the substrate holding member with the substrate is covered with the soft metal material layer, and the substrate is supported by the contact surface, so that the contact area between the metal material and the substrate is increased. Therefore, the contact area between the substrate holding member and the substrate can be increased. Therefore, the thermal conductivity (heat transfer coefficient) between the substrate holding member and the substrate can be improved. Therefore, even if the substrate is heated by exposure light irradiation, the heat of the substrate can be efficiently released to the substrate holding member side, so that the temperature change and temperature distribution of the liquid in the immersion area on the substrate by the substrate heat Can be suppressed. Therefore, exposure accuracy and measurement accuracy can be maintained.

  An exposure apparatus (EX) of the present invention is an exposure apparatus that exposes a substrate (P) by irradiating the substrate (P) with exposure light (EL) via a projection optical system (PL) and a liquid (LQ). And a substrate holding member (PH) for holding the substrate (P), and a fluid having a higher thermal conductivity than air is interposed between the substrate holding member (PH) and the substrate (P). And

  According to the present invention, even when a substrate is heated by irradiation with exposure light, the heat of the substrate can be efficiently released to the substrate holding member side through a fluid having high thermal conductivity. It is possible to suppress the temperature change and temperature distribution of the liquid in the upper immersion region. Therefore, exposure accuracy and measurement accuracy can be maintained.

  The device manufacturing method of the present invention uses the above-described exposure apparatus (EX). According to the present invention, exposure accuracy and measurement accuracy can be maintained, and a device having desired performance can be manufactured.

  According to the present invention, it is possible to suppress the temperature change and temperature distribution of the liquid in the immersion area, and it is possible to maintain the exposure accuracy and the measurement accuracy.

  The exposure apparatus of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic block diagram showing an embodiment of the exposure apparatus of the present invention.

  In FIG. 1, an exposure apparatus EX includes a mask stage MST that can move while supporting a mask M, and a substrate holder PH that holds a substrate P, and a substrate stage that can move while holding the substrate P in the substrate holder PH. PST, illumination optical system IL for illuminating mask M supported on mask stage MST with exposure light EL, and substrate P supported on substrate stage PST for an image of the pattern of mask M illuminated with exposure light EL A projection optical system PL for performing projection exposure, and a control device CONT for controlling overall operation of the exposure apparatus EX. As will be described in detail later, the contact surface of the substrate holder PH for holding the substrate P with the substrate P is covered with a layer of a predetermined material.

  The exposure apparatus EX of the present embodiment is an immersion exposure apparatus to which an immersion method is applied in order to substantially shorten the exposure wavelength to improve the resolution and substantially increase the depth of focus. A liquid supply mechanism 10 for supplying the liquid LQ to the substrate P, and a liquid recovery mechanism 20 for recovering the liquid LQ on the substrate P. In the present embodiment, pure water is used as the liquid LQ. The exposure apparatus EX transfers at least a part of the substrate P including the projection area AR1 of the projection optical system PL by the liquid LQ supplied from the liquid supply mechanism 10 while at least transferring the pattern image of the mask M onto the substrate P. A liquid immersion area AR2 that is larger than the projection area AR1 and smaller than the substrate P is locally formed. Specifically, the exposure apparatus EX irradiates the exposure light EL in a state where the liquid LQ is filled between the optical element 2 at the image surface side tip of the projection optical system PL and the surface (exposure surface) of the substrate P. The substrate P is exposed by projecting the pattern image of the mask M onto the substrate P via the liquid LQ between the projection optical system PL and the substrate P and the projection optical system PL.

  Here, in the present embodiment, the pattern formed on the mask M is exposed to the substrate P while the mask M and the substrate P are synchronously moved in different directions (reverse directions) in the scanning direction (predetermined direction) as the exposure apparatus EX. An example of using a scanning exposure apparatus (so-called scanning stepper) will be described. In the following description, the synchronous movement direction (scanning direction, predetermined direction) of the mask M and the substrate P in the horizontal plane is the X axis direction, and the direction orthogonal to the X axis direction is the Y axis direction (non-scanning direction) in the horizontal plane. A direction perpendicular to the X-axis and Y-axis directions and coincident with the optical axis AX of the projection optical system PL is defined as a Z-axis direction. Further, the rotation (inclination) directions around the X axis, Y axis, and Z axis are the θX, θY, and θZ directions, respectively. Here, the “substrate” includes a semiconductor wafer coated with a resist, and the “mask” includes a reticle on which a device pattern to be reduced and projected on the substrate is formed.

The illumination optical system IL illuminates the mask M supported by the mask stage MST with the exposure light EL, and the exposure light source, and an optical integrator and an optical integrator for uniformizing the illuminance of the light beam emitted from the exposure light source A condenser lens that collects the exposure light EL from the light source, a relay lens system, a variable field stop that sets the illumination area on the mask M by the exposure light EL in a slit shape, and the like. A predetermined illumination area on the mask M is illuminated with the exposure light EL having a uniform illuminance distribution by the illumination optical system IL. As the exposure light EL emitted from the illumination optical system IL, for example, far ultraviolet light (g-line, h-line, i-line) and KrF excimer laser light (wavelength 248 nm) emitted from a mercury lamp (e.g. DUV light), vacuum ultraviolet light (VUV light) such as ArF excimer laser light (wavelength 193 nm) and F ₂ laser light (wavelength 157 nm), or the like is used. In this embodiment, ArF excimer laser light is used. As described above, the liquid LQ in the present embodiment is pure water and can be transmitted even if the exposure light EL is ArF excimer laser light. Further, pure water can transmit ultraviolet rays (g-rays, h-rays, i-rays) and far-ultraviolet light (DUV light) such as KrF excimer laser light (wavelength 248 nm).

  The mask stage MST can move while holding the mask M, can move two-dimensionally in a plane perpendicular to the optical axis AX of the projection optical system PL, that is, in the XY plane, and can be rotated slightly in the θZ direction. The mask stage MST is driven by a mask stage driving device MSTD such as a linear motor. The mask stage driving device MSTD is controlled by the control device CONT. A movable mirror 50 is provided on the mask stage MST. A laser interferometer 51 is provided at a position facing the movable mirror 50. The two-dimensional position and rotation angle of the mask M on the mask stage MST are measured in real time by the laser interferometer 51, and the measurement result is output to the control device CONT. The control device CONT drives the mask stage driving device MSTD based on the measurement result of the laser interferometer 51, thereby positioning the mask M supported by the mask stage MST.

  The projection optical system PL projects and exposes the pattern of the mask M onto the substrate P at a predetermined projection magnification β, and includes a plurality of optical elements including an optical element (lens) 2 provided at the front end portion on the substrate P side. These optical elements are supported by a lens barrel PK. In the present embodiment, the projection optical system PL is a reduction system having a projection magnification β of, for example, 1/4, 1/5, or 1/8. Note that the projection optical system PL may be either an equal magnification system or an enlargement system. Further, the optical element 2 at the tip of the projection optical system PL of the present embodiment is provided so as to be detachable (replaceable) with respect to the lens barrel PK. The optical element 2 at the tip is exposed from the lens barrel PK, and the liquid LQ in the liquid immersion area AR2 is in contact with the optical element 2. Thereby, corrosion etc. of the lens barrel PK made of metal are prevented.

  The substrate stage PST includes a Z tilt stage 52 that holds the substrate P via a substrate holder PH, and an XY stage 53 that supports the Z tilt stage 52. The XY stage 53 is supported on the base 54. The substrate stage PST is driven by a substrate stage driving device PSTD such as a linear motor. The substrate stage driving device PSTD is controlled by the control device CONT. The Z tilt stage 52 can move the substrate P held by the substrate holder PH in the Z-axis direction and in the θX and θY directions (inclination directions). The XY stage 53 can move the substrate P held by the substrate holder PH in the XY direction (direction substantially parallel to the image plane of the projection optical system PL) and the θZ direction via the Z tilt stage 52. Needless to say, the Z tilt stage and the XY stage may be provided integrally.

  A recess 32 is provided on the substrate stage PST, and the substrate holder PH is disposed in the recess 32. Then, the upper surface 31 other than the concave portion 32 of the substrate stage PST (Z tilt stage 52) is a flat surface (flat portion) that is substantially the same height (level) as the surface of the substrate P held by the substrate holder PH. ). The upper surface of the movable mirror 55 is also substantially the same height (level) as the upper surface 31 of the substrate stage PST. Since the upper surface 31 that is substantially flush with the surface of the substrate P is provided around the substrate P, the liquid LQ is held on the image plane side of the projection optical system PL even when the edge region E of the substrate P is subjected to immersion exposure. The liquid immersion area AR2 can be formed satisfactorily. Further, a gap of about 0.1 to 2 mm is formed between the edge portion of the substrate P and the flat surface (upper surface) 31 provided around the substrate P. The gap is caused by the surface tension of the liquid LQ. The liquid LQ hardly flows into the substrate L, and the liquid LQ can be held under the projection optical system PL by the upper surface 31 even when the vicinity of the periphery of the substrate P is exposed.

  Further, the upper surface 31 of the substrate stage PST is subjected to a liquid repellency treatment and has liquid repellency. As the liquid repellent treatment of the upper surface 31, for example, a liquid repellent material such as polytetrafluoroethylene (Teflon (registered trademark)) or a liquid repellent material such as an acrylic resin material is applied, or the liquid repellent material is used. The process which sticks a thin film is mentioned. By making the upper surface 31 liquid repellent, the liquid LQ can be prevented from flowing out of the substrate stage PST during the immersion exposure, and the liquid LQ remaining on the upper surface 31 can be recovered well after the immersion exposure ( Removed).

  A movable mirror 55 is provided on the substrate stage PST (Z tilt stage 52). A laser interferometer 56 is provided at a position facing the movable mirror 55. The two-dimensional position and rotation angle of the substrate P on the substrate stage PST are measured in real time by the laser interferometer 56, and the measurement result is output to the control device CONT. Based on the measurement result of the laser interferometer 56, the control device CONT supports the substrate stage PST by driving the XY stage 53 via the substrate stage driving device PSTD in the two-dimensional coordinate system defined by the laser interferometer 56. The substrate P is positioned in the X-axis direction and the Y-axis direction.

  The exposure apparatus EX has a focus / leveling detection system 60 for detecting surface position information on the surface of the substrate P. The focus / leveling detection system 60 includes a projection unit 60A and a light receiving unit 60B, and projects the detection light La from the projection unit 60A through the liquid LQ onto the surface (exposed surface) of the substrate P from an oblique direction. The surface position information on the surface of the substrate P is detected by receiving the reflected light from P by the light receiving unit 60B through the liquid LQ. The control device CONT controls the operation of the focus / leveling detection system 60 and determines the position (focus position) in the Z-axis direction of the surface of the substrate P with respect to the predetermined reference plane (image plane) based on the light reception result of the light receiving unit 60B. To detect. Further, by obtaining each focus position at a plurality of points on the surface of the substrate P, the focus / leveling detection system 60 can also obtain the posture of the substrate P in the tilt direction. As the configuration of the focus / leveling detection system 60, for example, the one disclosed in JP-A-8-37149 can be used.

  The control device CONT drives the Z tilt stage 52 of the substrate stage PST via the substrate stage driving device PSTD, so that the position (focus position) of the substrate P held by the Z tilt stage 52 in the Z-axis direction, and The position in the θX and θY directions is controlled. That is, the Z tilt stage 52 operates based on a command from the control device CONT based on the detection result of the focus / leveling detection system 60, and controls the focus position (Z position) and tilt angle of the substrate P to control the substrate P. The surface (exposure surface) is adjusted to the image surface formed through the projection optical system PL and the liquid LQ.

  A substrate alignment system 350 for detecting an alignment mark on the substrate P or a reference mark on a reference member (described later) provided on the Z tilt stage 52 is provided in the vicinity of the tip of the projection optical system PL. In the substrate alignment system 350 according to the present embodiment, for example, as disclosed in Japanese Patent Laid-Open No. 4-65603, the substrate stage PST is stopped and illumination light such as white light from a halogen lamp is irradiated on the mark. An FIA (Field Image Alignment) method is employed in which an image of the obtained mark is captured within a predetermined imaging field by an image sensor and the position of the mark is measured by image processing.

  Further, in the vicinity of the mask stage MST, a mask alignment system 360 for detecting a reference mark on a reference member (described later) provided on the Z tilt stage 52 through the mask M and the projection optical system PL is provided. . In the mask alignment system 360 of the present embodiment, for example, as disclosed in JP-A-7-176468, the mark is irradiated with light, and image data of the mark imaged by a CCD camera or the like is subjected to image processing. A VRA (visual reticle alignment) method for detecting a mark position is employed.

  The liquid supply mechanism 10 is for supplying a predetermined liquid LQ to the image plane side of the projection optical system PL, and includes a liquid supply unit 11 capable of delivering the liquid LQ and one end of the liquid supply unit 11. And a supply pipe 13 to be connected. The liquid supply unit 11 includes a tank that stores the liquid LQ, a pressure pump, a filter unit that removes foreign matters and bubbles contained in the liquid LQ, and the like. The liquid supply operation of the liquid supply unit 11 is controlled by the control device CONT. When forming the liquid immersion area AR2 on the substrate P, the liquid supply mechanism 10 supplies the liquid LQ onto the substrate P.

  The liquid recovery mechanism 20 is for recovering the liquid LQ on the image plane side of the projection optical system PL, and has a liquid recovery part 21 that can recover the liquid LQ and one end connected to the liquid recovery part 21. And a recovery pipe 23. The liquid recovery unit 21 includes, for example, a vacuum system (a suction device) such as a vacuum pump, a gas-liquid separator that separates the recovered liquid LQ and gas, and a tank that stores the recovered liquid LQ. As a vacuum system, a vacuum system in a factory where the exposure apparatus EX is disposed may be used without providing the exposure apparatus EX with a vacuum pump. The liquid recovery operation of the liquid recovery unit 21 is controlled by the control device CONT. In order to form the immersion area AR2 on the substrate P, the liquid recovery mechanism 20 recovers a predetermined amount of the liquid LQ on the substrate P supplied from the liquid supply mechanism 10.

  Of the plurality of optical elements constituting the projection optical system PL, a nozzle member 70 is disposed in the vicinity of the optical element 2 in contact with the liquid LQ. The nozzle member 70 is an annular member provided so as to surround the side surface of the optical element 2 above the substrate P (substrate stage PST). A gap is provided between the nozzle member 70 and the optical element 2, and the nozzle member 70 is supported by a predetermined support mechanism so as to be vibrationally separated from the optical element 2. Further, the liquid LQ is prevented from entering the gap and the bubbles are not mixed into the liquid LQ from the gap. The nozzle member 70 is made of, for example, stainless steel.

  The nozzle member 70 includes a supply port 12 provided above the substrate P (substrate stage PST) and disposed so as to face the surface of the substrate P. In the present embodiment, the nozzle member 70 has two supply ports 12A and 12B. The supply ports 12 </ b> A and 12 </ b> B are provided on the lower surface 70 </ b> A of the nozzle member 70.

  A supply flow path through which the liquid LQ supplied onto the substrate P flows is formed inside the nozzle member 70. One end of the supply flow path of the nozzle member 70 is connected to the other end of the supply pipe 13, and the other end of the supply flow path is connected to each of the supply ports 12A and 12B. Here, the other end portion of the supply flow path formed inside the nozzle member 70 is branched from the middle so as to be connected to each of the plurality (two) of supply ports 12A and 12B.

  The nozzle member 70 includes a recovery port 22 provided above the substrate P (substrate stage PST) and disposed so as to face the surface of the substrate P. In the present embodiment, the recovery port 22 is formed in an annular shape on the lower surface 70A of the nozzle member 70 so as to surround the optical element 2 (projection region AR1) and the supply port 12 of the projection optical system PL.

  In addition, a recovery flow path through which the liquid LQ recovered via the recovery port 22 flows is formed inside the nozzle member 70. One end of the recovery flow path of the nozzle member 70 is connected to the other end of the recovery pipe 23, and the other end of the recovery flow path is connected to the recovery port 22. Here, the recovery channel formed inside the nozzle member 70 includes an annular channel corresponding to the recovery port 22 and a manifold channel that collects the liquid LQ flowing through the annular channel.

  In the present embodiment, the nozzle member 70 constitutes a part of each of the liquid supply mechanism 10 and the liquid recovery mechanism 20. Supply ports 12A and 12B constituting the liquid supply mechanism 10 are provided at respective positions on both sides in the X-axis direction across the projection area AR1 of the projection optical system PL, and the recovery ports 22 constituting the liquid recovery mechanism 20 are The liquid supply ports 12A and 12B of the liquid supply mechanism 10 are provided outside the projection area AR1 of the projection optical system PL. Note that the projection area AR1 of the projection optical system PL in the present embodiment is set in a rectangular shape in plan view with the Y-axis direction as the long direction and the X-axis direction as the short direction.

  The operation of the liquid supply unit 11 is controlled by the control device CONT. The controller CONT can control the liquid supply amount per unit time by the liquid supply unit 11. When supplying the liquid LQ onto the substrate P, the control device CONT sends out the liquid LQ from the liquid supply unit 11 and above the substrate P via the supply channel formed inside the supply pipe 13 and the nozzle member 70. The liquid LQ is supplied onto the substrate P from the supply ports 12A and 12B provided in. The liquid LQ is supplied from both sides of the projection area AR1 via the supply ports 12A and 12B.

  The liquid recovery operation of the liquid recovery unit 21 is controlled by the control device CONT. The control device CONT can control the liquid recovery amount per unit time by the liquid recovery unit 21. The liquid LQ on the substrate P recovered from the recovery port 22 provided above the substrate P is recovered by the liquid recovery part 21 via the recovery flow path formed inside the nozzle member 70 and the recovery pipe 23. .

The liquid contact surface 2A of the optical element 2 of the projection optical system PL and the lower surface (liquid contact surface) 70A of the nozzle member 70 are lyophilic (hydrophilic). In the present embodiment, the optical element 2 is formed of fluorite having high affinity with pure water. The optical element 2 may be quartz having high affinity with water. Further, the liquid contact surface 2A of the optical element 2 and the liquid contact surface 70A of the nozzle member 70 may be subjected to a hydrophilization (lyophilic process) to further increase the affinity with the liquid LQ. Examples of the lyophilic treatment include a treatment in which a lyophilic material such as MgF ₂ , Al ₂ O ₃ , or SiO ₂ is provided on the liquid contact surface. Alternatively, since the liquid LQ in the present embodiment is water having a high polarity, a thin film may be provided using a substance having a molecular structure with a high polarity such as alcohol as a lyophilic process (hydrophilization process).

  FIG. 2 is a plan view of the Z tilt stage 52 of the substrate stage PST as viewed from above. In FIG. 2, the substrate P is virtually illustrated by a broken line. A movable mirror 55 is disposed on two mutually perpendicular edges of the Z tilt stage 52 that is rectangular in plan view. In addition, a recess 32 is formed substantially at the center of the Z tilt stage 52, and a substrate holder PH that holds the substrate P is disposed in the recess 32.

  The substrate holder PH includes a substantially annular peripheral wall portion 33 and a plurality of pin-shaped support portions 34 that are disposed inside the peripheral wall portion 33 and hold (support) the substrate P. The peripheral wall portion 33 is disposed around the support portion 34, and the support portion 34 is uniformly disposed inside the peripheral wall portion 33. As described above, a predetermined gap is formed between the side surface of the substrate P held by the substrate holder PH and the upper surface 31 of the Z tilt stage 52. In the drawing, the upper end surface of the peripheral wall portion 33 has a relatively wide width, but actually has only a width of about 1 to 2 mm.

  Further, a reference member 300 is disposed at a predetermined position outside the substrate P on the substrate stage PST. The reference member 300 is provided with a reference mark PFM detected by the substrate alignment system 350 and a reference mark MFM detected by the mask alignment system 360 in a predetermined positional relationship. The upper surface of the reference member 300 is a substantially flat surface, and is provided at substantially the same height (level) as the surface of the substrate P held by the substrate stage PST and the upper surface 31 of the substrate stage PST. The upper surface of the reference member 300 can also serve as a reference surface for the focus / leveling detection system 60.

  Further, an illuminance unevenness sensor 400 as disclosed in, for example, Japanese Patent Application Laid-Open No. 57-117238, for example, Japanese Patent Application Laid-Open No. 2002-14005 is provided as a light measurement unit at a predetermined position on the substrate stage PST. Various light measurement units such as the aerial image measurement sensor 500 disclosed in the official gazette and a dose sensor (illuminance sensor) 600 disclosed in, for example, Japanese Patent Laid-Open No. 11-16816 are provided.

  FIG. 3 is an enlarged cross-sectional view of a main part of the substrate holder PH holding the substrate P and the substrate stage PST. In FIG. 3, a substrate holder PH that holds the substrate P is disposed inside the recess 32 of the Z tilt stage 52. The recess 32 is formed inside the upper surface 31, and the inner side surface 36 of the recess 32 is adjacent to the upper surface 31. The substrate holder PH includes a peripheral wall portion 33 and a pin-shaped support portion 34 disposed inside the peripheral wall portion 33. Each of the support portions 34 holds the substrate P by bringing the upper surface 34 </ b> A into contact with the back surface of the substrate P. In other words, the upper surface 34A of the support portion 34 is a contact surface with the substrate P of the substrate holder PH. In the figure, the support portion 34 is shown to be relatively large, but actually, a very small number of pin-like support portions are formed inside the peripheral wall portion 33.

  The base material PB of the substrate holder PH provided with the peripheral wall portion 33 and the pin-shaped support portion 34 disposed inside the peripheral wall portion 33 is formed of silicon carbide (SiC). Silicon carbide is a material having a high thermal conductivity, and has a thermal conductivity of about 130 W / (m · K).

  FIG. 4 is an enlarged cross-sectional view of the pin-shaped support portion 34. In FIG. 4, the upper surface 34A of the support portion 34 that is a contact surface of the substrate holder PH with the substrate P is covered with a layer 35 of a material different from the base material PB of the substrate holder PH (support portion 34). In the following description, the layer 35 covered on the surface of the substrate holder PH including the upper surface 34A of the support portion 34 is appropriately referred to as a “functional layer 35”.

  In the present embodiment, the functional layer 35 is made of silicon (Si). Silicon (Si) that is a material for forming the functional layer 35 is a material that can be processed with higher surface accuracy than silicon carbide (SiC) that is a material for forming the base material PB. Silicon is a material having a high thermal conductivity, and has a thermal conductivity of about 148 W / (m · K), which is higher than that of silicon carbide, which is a material for forming the base material PB. Have. Further, silicon has an advantage that it does not pollute the environment where the exposure apparatus is placed, such as good adhesion to silicon carbide, which is the base material PB of the substrate holder PH, and less outgas.

  When the substrate P is made of silicon (Si), the functional layer 35 is more preferably made of silicon. This is because, when the substrate P is attracted and held by the substrate holder PH (support portion 34), even if the silicon coated on the upper surface of the support portion 34 adheres to the back surface of the substrate P, it is the same material as the substrate P. This is because there is no concern about chemical contamination of the substrate P.

  In order to form the substrate holder PH having the functional layer 35, silicon is coated on the upper surface 34A of the base material PB (support portion 34) made of silicon carbide based on, for example, a sputtering method or a vapor deposition method. A film is formed. Thereafter, the silicon film formed on the upper surface 34A is mirror-polished to form the functional layer 35 having the surface 35A with high surface accuracy on the upper surface 34A of the substrate PB.

  Silicon, which is a material for forming the functional layer 35, is a material that can be mirror-finished. The silicon 35 is formed on the upper surface 34A of the base material PB and mirror-finished so that the surface 35A that serves as a contact surface with the substrate P The surface area of the substrate holder PH and the substrate P can be increased by supporting the substrate P with the surface 35A having the high surface accuracy.

  Here, a configuration in which the upper surface 34A of the base material PB made of silicon carbide is directly mirror-polished without covering the upper surface 34A of the base material PB with silicon is also conceivable. However, when a member made of silicon carbide is polished, the surface to be polished tends to be rough, and it is relatively difficult to mirror-process silicon carbide. On the other hand, silicon is a material that can be mirror-finished. One reason that silicon can be mirror-finished is that the coated silicon is a poreless material with no or few pores. Since the pore-less material can be satisfactorily mirror-finished, the contact surface having a surface 35A with very high surface accuracy is obtained by coating the substrate PB made of silicon carbide with silicon, which is a pore-less material, and mirror-finishing. 34A can be formed.

  Returning to FIG. 3, the upper surface 33 </ b> A of the peripheral wall portion 33 is a flat surface. The height of the peripheral wall portion 33 is lower than the height of the support portion 34, and a gap B is formed between the substrate P and the peripheral wall portion 33. The gap B is smaller than the gap A between the inner side surface 36 of the recess 32 and the side surface of the substrate P. For example, the gap A is preferably about 0.1 to 1.0 mm and the gap B is about 2.0 to 5.0 μm in consideration of manufacturing errors of the outer shape of the substrate P, placement accuracy of the substrate P, and the like. A gap C is formed between the inner side surface 36 of the recess 32 and the side surface 37 of the substrate holder PH facing the inner side surface 36. Here, the diameter of the substrate holder PH is smaller than the diameter of the substrate P, and the gap A is smaller than the gap C. In this embodiment, the substrate P is not formed with notches (orientation flats, notches, etc.) for alignment, the substrate P is substantially circular, and the gap A is 0.1 mm over the entire circumference. Since it is -1.0 mm, inflow of the liquid LQ can be prevented. In addition, by making the side surface of the substrate P liquid-repellent (water-repellent) to make it liquid-repellent, the inflow of the liquid LQ from the gap A can be more reliably prevented. Of course, the substrate P may have a notch.

  Further, as described above, the upper surface 31 of the Z tilt stage 52 has liquid repellency. However, in the present embodiment, the inner side surface 36 of the Z tilt stage 52 is also subjected to liquid repellency treatment to be liquid repellant. have. Further, in the substrate holder PH, the upper surface 33A and the side surface 37 of the peripheral wall 33 are also made liquid repellent and have liquid repellency.

  The substrate stage PST includes a suction device 40 that applies a negative pressure to the first space 38 surrounded by the peripheral wall portion 33 of the substrate holder PH. The suction device 40 is formed inside the base material PB, a plurality of suction ports 41 provided on the upper surface other than the support part 34 of the base material PB, a vacuum part 42 including a vacuum pump provided outside the substrate stage PST, and the like. And a flow path 43 that connects each of the plurality of suction ports 41 to the vacuum part 42. The suction device 40 sucks the gas (air) inside the first space 38 formed between the base material PB including the peripheral wall portion 33 and the support portion 34 and the substrate P supported by the support portion 34. By making the first space 38 have a negative pressure, the substrate P is sucked and held on the support portion 34. That is, the substrate holder PH in the present embodiment has a so-called pin chuck mechanism. Since the gap B between the back surface PC of the substrate P and the upper surface 33A of the peripheral wall portion 33 is small, the negative pressure in the first space 38 is maintained.

  The substrate stage PST includes a recovery unit 160 that recovers the liquid LQ that has flowed into the second space 39 between the inner side surface 36 of the recess 32 and the side surface 37 of the substrate holder PH. In the present embodiment, the recovery unit 160 includes a tank 161 that can store the liquid LQ, and a flow path 162 that is provided inside the Z tilt stage 52 and connects the space 39 and the tank 161. The inner wall surface of the flow path 162 is also subjected to a liquid repellency treatment.

  The Z tilt stage 52 is formed with a flow path 45 that connects the second space 39 between the inner side surface 36 of the recess 32 and the side surface 37 of the substrate holder PH and the space outside the Z tilt stage 52 (atmospheric space). Has been. Gas (air) can circulate between the second space 39 and the outside of the Z stage 52 via the flow path 45, and the second space 39 is set to substantially atmospheric pressure.

  Next, a method for exposing the pattern image of the mask M onto the substrate P using the exposure apparatus EX having the above-described configuration will be described.

  In parallel with the supply of the liquid LQ onto the substrate P by the liquid supply mechanism 10, the control device CONT performs the recovery of the liquid LQ on the substrate P by the liquid recovery mechanism 20, and the substrate stage PST that supports the substrate P X While moving in the axial direction (scanning direction), the pattern image of the mask M is projected and exposed onto the substrate P via the liquid LQ between the projection optical system PL and the substrate P and the projection optical system PL.

  The liquid LQ supplied from the liquid supply unit 11 of the liquid supply mechanism 10 to form the liquid immersion area AR2 flows through the supply pipe 13 and then is supplied through a supply channel formed inside the nozzle member 70. It is supplied onto the substrate P from the ports 12A and 12B. The liquid LQ supplied onto the substrate P from the liquid supply ports 12A and 12B is supplied so as to spread between the lower end surface of the front end portion (optical element 2) of the projection optical system PL and the substrate P, and the projection area AR1. A liquid immersion area AR2 smaller than the substrate P and larger than the projection area AR1 is locally formed on a part of the substrate P including

  The exposure apparatus EX in the present embodiment projects and exposes a pattern image of the mask M onto the substrate P while moving the mask M and the substrate P in the X-axis direction (scanning direction). A pattern image of a part of the mask M is projected into the projection area AR1 via the liquid LQ in the area AR2 and the projection optical system PL, and is synchronized with the movement of the mask M in the −X direction (or + X direction) at the velocity V. Then, the substrate P moves in the + X direction (or −X direction) with respect to the projection area AR1 at the speed β · V (β is the projection magnification). A plurality of shot areas are set on the substrate P, and after the exposure to one shot area is completed, the next shot area is moved to the scanning start position by the stepping movement of the substrate P. Hereinafter, step-and-scan The scanning exposure process for each shot area is sequentially performed while moving the substrate P by the method.

  During immersion exposure, the substrate P is heated by irradiation with the exposure light EL, and the heat may cause a temperature change or a temperature distribution in the liquid LQ in the immersion area AR2 on the substrate P. Since the temperature change and temperature distribution of the liquid LQ cause a change in the refractive index of the liquid LQ, the imaging characteristics through the liquid LQ of the projection optical system PL are affected, and the pattern may not be formed on the substrate P with high accuracy. . Further, even when the focus / leveling detection system 60 measures the surface position information of the substrate P via the liquid LQ, the surface position information of the substrate P can be accurately measured when the temperature change or temperature distribution of the liquid LQ occurs. Therefore, there is a possibility that the position of the image plane through the liquid LQ of the projection optical system PL cannot match the surface of the substrate P.

  However, in the present embodiment, the surface 35A serving as the contact surface of the substrate holder PH with the substrate P is mirror-finished, and the contact area between the substrate holder PH and the substrate P is increased. The thermal conductivity (heat transfer coefficient) with the substrate P can be improved. Therefore, even when the substrate P is heated by irradiation with the exposure light EL, as shown in the schematic diagram of FIG. 4, the heat of the substrate P is efficiently transferred to the substrate holder PH (support portion 34) side through the functional layer 35. Since it can escape, it can suppress that the liquid LQ of liquid immersion area | region AR2 on the board | substrate P generate | occur | produces a temperature change and temperature distribution with the heat | fever of the board | substrate P. Therefore, exposure accuracy and measurement accuracy can be maintained.

  Further, the liquid immersion area AR2 is formed on the reference member 300 and the optical measurement units 400, 500, 600 provided on the substrate stage PST, and various measurement processes are performed via the liquid LQ in the liquid immersion area AR2. Is also possible. Even in such a case, a contact member that supports the upper plate of the reference member that contacts the liquid LQ, or a support member that supports the upper plate of the optical measurement unit that contacts the liquid LQ, contacts the upper plate. By providing the functional layer 35, the heat of the upper plate can be efficiently released to the support member side. Therefore, it is possible to suppress the liquid LQ in the liquid immersion area AR2 on the upper plate from generating a temperature change or a temperature distribution due to the heat of the upper plate, and it is possible to maintain high measurement accuracy.

  As shown in FIG. 3, when the edge region E of the substrate P is subjected to immersion exposure, the liquid LQ in the immersion region AR2 is applied to a part of the surface of the substrate P and a part of the upper surface 31 of the Z tilt stage 52. Be placed. At this time, since the side surface of the substrate P and the inner side surface 36 facing the side surface are liquid repellent, the liquid LQ in the liquid immersion area AR2 hardly enters the gap A, and hardly flows into the gap A due to the surface tension. Therefore, even when the edge region E of the substrate P is exposed, immersion exposure can be performed while the liquid LQ is satisfactorily held under the projection optical system PL. At this time, since the upper surface 31 of the Z tilt stage 52 is also liquid repellent, excessive wetting and spreading on the upper surface 31 of the liquid LQ forming the liquid immersion area AR2 can be prevented, and the liquid immersion area AR2 can be formed satisfactorily. At the same time, it is possible to prevent inconvenience such as outflow and scattering of the liquid LQ.

  Further, even when the liquid LQ in the liquid immersion area AR2 slightly flows into the second space 39 through the gap A, the back surface of the substrate P and the upper surface 33A of the peripheral wall portion 33 are each subjected to the liquid repellent treatment. Since B is sufficiently small, the liquid LQ does not flow into the first space 38 that is set to a negative pressure in order to hold the substrate P by suction with respect to the support portion 34. Accordingly, it is possible to prevent the inconvenience that the liquid LQ flows into the suction port 41 and the substrate P cannot be sucked and held.

  Then, the liquid LQ that has flowed into the second space 39 is collected in the tank 161 of the collection unit 160 via the flow path 162, and the outflow (leakage), scattering, etc. of the liquid LQ to the peripheral device can be suppressed. At this time, the inner side surface 36 of the recess 32 forming the second space 39, the side surface 37 of the substrate holder PH, or the flow path 162 is liquid repellent, so that the liquid LQ that has flowed into the second space 39 is the first. The flow smoothly flows through the flow path 162 and is collected in the tank 161 without remaining in the second space 39.

  By the way, due to the suction operation of the suction device 40, the gas (air) in the second space 39 flows into the first space 38 via the gap B, and accordingly, the liquid LQ in the liquid immersion area AR2 passes through the gap A. There is a possibility that the liquid may enter the second space 39 and the formation of the liquid immersion area AR2 may become unstable. However, the gap C between the inner side surface 36 of the recess 32 and the side surface 37 of the substrate holder PH is set to be larger than the gap A between the side surface PB of the substrate P and the inner side surface 36 of the recess 32, so that the second space. 39 is open to the atmosphere via the flow path 45, so the air that passes through the gap B is mostly air that flows in from the outside via the flow path 45 and passes through the gap C, and passes through the gap A. The air (liquid LQ) is not only small, but also the suction force through the gap A can be made smaller than the surface tension of the liquid LQ, and the liquid LQ in the liquid immersion area AR2 is transferred to the second space 39 through the gap A. It is possible to suppress inconvenience flowing into

  At this time, the gas (air) supply device 45 ′ is connected to the other end portion of the flow path 45 opposite to the one end portion connected to the second space 39, and the inner side surface 36 of the recess 32 and the side surface of the substrate holder PH are connected. 37 may be set to a positive pressure, specifically, slightly higher than atmospheric pressure. Thereby, the inconvenience that the liquid LQ in the liquid immersion area AR2 flows into the space 39 via the gap A can be suppressed. In this case, if the second space 39 is excessively pressurized, the gas (air) inside the second space 39 flows into the liquid LQ in the liquid immersion area AR2 through the gap A, and bubbles are mixed into the liquid 1. Since inconvenience occurs, it is preferable that the second space 39 is set to substantially atmospheric pressure (a level slightly higher than atmospheric pressure).

  As described above, since the upper surface 34A of the support portion 34 (base material PB) of the substrate holder PH is covered with a silicon material that can be processed with higher surface accuracy than the base material PB, the functional layer 35 is formed. By mirror-finishing the functional layer 35, the surface accuracy of the surface 35A (upper surface 34A) serving as a contact surface can be improved. Further, by supporting the substrate P with the upper surface 34A having the surface 35A with high surface accuracy, the contact area between the substrate holder PH and the substrate P can be increased, and the heat conduction between the substrate holder PH and the substrate P can be increased. The rate can be improved. And since the base material PB was formed with silicon carbide with high thermal conductivity, the base material PB can efficiently release the heat transferred from the substrate P through the functional layer 35. Therefore, it is possible to suppress the temperature change and the temperature distribution of the liquid LQ in the liquid immersion area AR2 on the substrate P due to the heat of the substrate P. Therefore, exposure accuracy and measurement accuracy can be maintained.

  In the present embodiment, the material for forming the base material PB is silicon carbide, and silicon is described as an example of the material that can be mirror-finished. However, the material that has good adhesion to the base material PB and that can be mirror-finished is used. If desired, any material other than silicon can be used. Here, as a material for covering the upper surface 34A of the base material PB, it is desirable to employ a poreless material from the viewpoint of ease of mirror finishing.

  The material for forming the base material PB is not limited to silicon carbide, and any material can be used as long as it has a desired material (strength or the like) as the material for forming the substrate holder PH. For example, low thermal expansion optical glass such as Zerodur (manufactured by Schott, registered trademark) can be used as the substrate PB.

  On the other hand, since the above-mentioned zerodur (low thermal expansion optical glass) is a material having a relatively low thermal conductivity, when such a material having a low thermal conductivity is used as the substrate PB, it is shown in FIG. As described above, a functional layer 35 made of a material having higher thermal conductivity than the base material PB, for example, silicon (Si), is provided on the entire upper surface PBS of the base material PB including the upper surface 34A of the support portion 34 of the base material PB. It is desirable to provide it. By doing so, even if the substrate P held by the substrate holder PH is irradiated with the exposure light EL and the substrate P is heated, the heat of the substrate P can be efficiently released to the substrate holder PH side. The temperature of the liquid LQ in the liquid immersion area AR2 on the substrate P and the occurrence of temperature distribution can be suppressed by the heat of the substrate P. Therefore, exposure accuracy and measurement accuracy can be maintained.

  Further, as a means for improving the thermal conductivity (heat transfer coefficient) between the substrate holder PH and the substrate P, the total contact area of the contact surface 34A (35A) of the pin-like support portion 34 of the substrate holder PH with respect to the substrate P. Increase. By increasing the contact area of the contact surface 34A that contacts the back surface of the substrate P, the heat of the substrate P can be effectively released to the substrate holder PH side. In order to increase the contact area of the substrate holder PH with the substrate P, for example, the number of pin-shaped support portions 34 is increased to increase the number (density) of contact surfaces 34A per unit area of the substrate P, or pin-shaped support What is necessary is just to enlarge the area of 34 A of contact surfaces per pin-shaped support part 34, such as making the part 34 thick. Further, the sum of the contact surfaces 34A of the plurality of pin-shaped support portions 34 that contact the back surface of the substrate P only needs to be increased. For example, the number of pin-shaped support portions 34 in a specific region in the entire area of the back surface of the substrate P may be increased. Good. On the other hand, if the number of pin-shaped support portions 34 is increased too much or the area of the contact surface 34A per pin-shaped support portion 34 is too large, foreign matter will adhere to the upper surface 34A and the upper surface 34A and the substrate P There is a high probability that foreign matter is sandwiched between them, and there is a high probability that the flatness of the held substrate P cannot be maintained, and there is a disadvantage that the vacuum suction force of the substrate holder PH to the substrate P becomes weak. . Therefore, by setting the total amount (density) of the contact area with the contact surface 34A per unit area of the back surface of the substrate P to about 20%, the heat of the substrate P is maintained while maintaining the flatness of the substrate P. Effectively escape to the PH side. When the substrate P is heated by the irradiation of the exposure light EL and the temperature of the substrate P changes by 1 ° C., the temperature change amount of the liquid LQ in the liquid immersion area AR2 in contact with the substrate P is the above-described amount of the contact surface 34A. When the density is 1 to 2%, the temperature is about 0.1 ° C. However, when the density is about 20%, the temperature change amount of the liquid LQ can be reduced to about 0.09 ° C.

  Further, as a means for improving the thermal conductivity (heat transfer coefficient) between the substrate holder PH and the substrate P, there is a method of reducing the height of the pin-shaped support portion 34 of the substrate holder PH. By reducing the height of the pin-shaped support portion 34 (by shortening the pin-shaped support portion 34), the heat of the substrate P can be effectively released to the substrate holder PH side. On the other hand, if the height of the pin-shaped support portion 34 is made too low, when a foreign object enters between the pin-shaped support portion 34 and the pin-shaped support portion 34 adjacent thereto, the foreign material is held by the substrate holder PH. The probability of contacting the back surface of the substrate P increases, and the probability that the flatness of the held substrate P cannot be maintained increases. Therefore, by setting the height of the pin-shaped support portion 34 to about 10 μm, the heat of the substrate P can be effectively released to the substrate holder PH side while maintaining the flatness of the substrate P. When the substrate P is heated by the exposure light EL and the temperature of the substrate P changes by 1 ° C., the temperature change amount of the liquid LQ in the immersion area AR2 in contact with the substrate P is about 100 μm in height. In this case, the temperature is about 0.1 ° C. However, by setting the height to about 10 μm, the temperature change amount of the liquid LQ can be reduced to about 0.09 ° C.

  The total amount (density) of the contact surface 34A per unit area on the back surface of the substrate P defined by the number of support portions 34 and the like, and the height of the support portion 34 are the heat conduction of the support portion 34 (base material PB). Rate, exposure light EL dose, material of substrate P, photoresist (photosensitive agent) applied to the surface of substrate P, protective film provided on the photosensitive agent, material of liquid LQ, and substrate P In consideration of various parameters such as the flow velocity of the flowing liquid LQ and the influence of foreign matter, it is optimally set so as not to cause a temperature change or a temperature distribution of the liquid LQ in the liquid immersion area AR2.

  Further, as shown in FIG. 6A, the upper surface 34A of the support portion 34 (base material PB) may be covered with a layer 35 'of a metal material that is softer than the base material PB. Examples of such a metal material include gold and indium. By forming the functional layer 35 ′ provided on the contact surface of the substrate holder PH with the substrate P from a soft metal material, as shown in FIG. 6B, when the substrate P is held, the functional layer 35 ′ It is deformed so as to be slightly crushed, and the contact area with the substrate P is increased.

  Thus, the contact area between the substrate holder PH and the substrate P can also be increased by providing the functional layer 35 'made of a soft metal material on the upper surface 34A. Therefore, the thermal conductivity between the substrate holder PH and the substrate P can be improved. Therefore, even when the substrate P is heated by irradiation with the exposure light EL, the heat of the substrate P can be efficiently released to the substrate holder PH side, so that the liquid in the liquid immersion area AR2 on the substrate P is heated by the heat of the substrate P. LQ temperature changes and temperature distribution can be suppressed. Therefore, exposure accuracy and measurement accuracy can be maintained.

  In each of the above-described embodiments, an internal flow path for flowing a coolant inside the substrate holder PH may be formed, and the coolant may flow through the internal flow path. By doing so, the temperature rise of the substrate P, and hence the temperature change of the liquid LQ on the substrate P can be suppressed.

  Hereinafter, another embodiment of the present invention will be described with reference to FIG. In the following description, the same or equivalent components as those of the above-described embodiment are denoted by the same reference numerals, and the description thereof is simplified or omitted.

  A characteristic part of this embodiment is that a gas supply device 80 capable of supplying a gas having a higher thermal conductivity than air is provided in the first space 38 between the substrate holder PH and the substrate P, and the gas supply device. 80 is used to interpose the gas between the substrate holder PH and the substrate P. Here, the air is an environmental gas in which the exposure apparatus is placed, and is a gas filled in the chamber apparatus in which the exposure apparatus EX is accommodated, and the space above the substrate P is filled with air. Yes. Examples of the gas having higher thermal conductivity than air include hydrogen and helium. At 0 ° C., the thermal conductivity of air is about 0.0241 W / (m · K), whereas the thermal conductivity of hydrogen is about 0.1682 W / (m · K), and the thermal conductivity of helium is It is about 0.1422 W / (m · K). In the present embodiment, the gas supply device 80 supplies helium. The first space 38 is replaced with helium.

  The gas supply device 80 includes a gas supply unit 81 that sends out helium, a supply channel 82 that has one end connected to the gas supply unit 81, and the other end connected to (joins) the channel 43. It has. A valve 83 for switching the flow path is provided at a junction between the supply flow path 82 and the flow path 43. When the flow path 43 and the vacuum part 42 are connected by the valve 83, the flow path between the flow path 43 and the supply flow path 82 (gas supply part 81) is closed, and the flow path 43 and the vacuum part 42 When the flow path between them is closed, the flow path 43 and the supply flow path 82 (gas supply part 81) are connected. Then, when the flow path 43 and the vacuum part 42 are connected by the valve 83, the vacuum part 42 is driven, whereby the gas in the first space 38 is sucked through the suction port 41, and the first space 38 is negative. The substrate P is sucked and held on the support portion 34 by being compressed. On the other hand, helium is supplied to the first space 38 through the suction port 41 by driving the gas supply unit 81 in a state where the flow path 43 and the gas supply unit 81 are connected by the valve 83.

  When replacing the first space 38 with helium, the control device CONT first drives the vacuum unit 42 with the valve 83 connected to the vacuum unit 42 by the valve 83 to suck the gas in the first space 38. As a result, the substrate P is sucked and held on the support portion 34. Thereafter, the control device CONT switches the valve 43 to drive the gas supply unit 81 in a state where the flow path 43 and the gas supply unit 81 are connected to supply helium to the first space 38. At this time, the control device CONT supplies a predetermined amount of helium from the gas supply unit 81 to such an extent that the negative pressure in the first space 38 is maintained (to the extent that the adsorption holding of the substrate P with respect to the support unit 34 is not released). Then, the gas suction operation of the first space 38 and the helium supply operation to the first space 38 are alternately repeated a predetermined number of times, and the first space 38 is maintained at a negative pressure, so that the first space 38 is helium. The substrate P can be sucked and held by the substrate holder PH in a state filled with the above.

  As described above, even if the substrate P is heated by irradiation with the exposure light EL by interposing a gas having a higher thermal conductivity than air in the space 38 between the substrate holder PH and the substrate P, The heat of the substrate P can be efficiently released to the substrate holder PH side through a gas (hydrogen or helium) having a high thermal conductivity. Therefore, it is possible to suppress the temperature change and the temperature distribution of the liquid LQ in the liquid immersion area AR2 on the substrate P due to the heat of the substrate P, and it is possible to maintain the exposure accuracy and the measurement accuracy.

  Note that the temperature of the gas filling the space 38 is preferably substantially the same as the temperature of the liquid LQ in the liquid immersion area AR2, and thus the temperature in the chamber apparatus in which the exposure apparatus EX is accommodated. If the temperature of the space 38 on the lower side of the substrate P and the temperature of the liquid LQ on the substrate P are different, a temperature change and a temperature distribution occur in the liquid LQ in the immersion area AR2 on the substrate P. By making the temperature of the space 38 and the temperature of the liquid LQ in the liquid immersion area AR2 on the substrate P substantially the same, the liquid LQ in the liquid immersion area AR2 on the substrate P has a disadvantage that a temperature change or a temperature distribution occurs. Can be prevented.

  Next, another embodiment of the present invention will be described with reference to FIG. A characteristic part of this embodiment is that a liquid supply device 90 capable of supplying a liquid having a higher thermal conductivity than air is provided in the first space 38 between the substrate holder PH and the substrate P, and the liquid supply device 90, the liquid is interposed between the substrate holder PH and the substrate P. In the present embodiment, the first space 38 between the substrate holder PH and the substrate P is filled with the same liquid (pure water) as the exposure liquid LQ for forming the liquid immersion area AR2. At 0 ° C., the thermal conductivity of air is about 0.0241 W / (m · K), whereas the thermal conductivity of water is about 0.561 W / (m · K).

  The liquid supply device 90 includes a liquid supply unit 91 that delivers pure water, and a supply channel 92 that has one end connected to the liquid supply unit 91 and the other end connected to the first space 38. The supply channel 92 is formed inside the Z tilt stage 52 and the substrate holder PH.

  When the first space 38 is replaced with pure water, the control device CONT drives the vacuum unit 42 and sucks the gas in the first space 38, while supplying liquid (pure water) from the liquid supply unit 91 to the first space 38. Supply against. The vacuum part 42 sucks the gas in the first space 38, so that the first space 38 is made negative and the substrate P is adsorbed and held. In parallel with the suction operation of the vacuum part 42, the liquid (pure water) is supplied from the liquid supply part 91, so that the first space 38 is filled with the liquid (pure water) in a short time. At this time, the liquid supplied from the liquid supply unit 91 flows into the suction port 41, but a gas-liquid separator is provided at a predetermined position of the flow path 43 (a predetermined position on the upstream side of the vacuum unit 42). Thus, it is possible to prevent the liquid from flowing into the vacuum part 42.

  As described above, by interposing a liquid (pure water) having a higher thermal conductivity than air in the space 38 between the substrate holder PH and the substrate P, the substrate P is heated by irradiation with the exposure light EL. However, the heat of the substrate P can be efficiently released to the substrate holder PH side through the liquid (pure water) having high thermal conductivity. Therefore, it is possible to suppress the temperature change and the temperature distribution of the liquid LQ in the liquid immersion area AR2 on the substrate P due to the heat of the substrate P, and it is possible to maintain the exposure accuracy and the measurement accuracy. Further, by interposing a liquid between the substrate P and the substrate holder PH, the substrate P can be firmly adsorbed by the substrate holder PH due to the surface tension of the liquid. Thereby, even if a foreign material is inserted between the substrate P and the substrate holder PH, the foreign material can be crushed to some extent and the flatness of the substrate P can be maintained. In addition, the force with which the back surface of the substrate P is pressed against the contact surface 34A (35A) of the substrate holder PH is improved, so that the upper surface of the support portion 34 is deformed so that the support portion 34 contacts the substrate P. The area can be increased.

  When the space 38 is filled with the liquid LQ, the vacuum portion 42 and the like are driven in a state where the liquid immersion area AR2 of the liquid LQ is arranged above the gap A, and the liquid immersion area AR2 is inserted through the gap A and the gap B. The liquid LQ may flow into the space 38.

  In the present embodiment, the liquid (pure water) LQ for forming the liquid immersion area AR2 is used as the liquid interposed between the substrate P and the substrate holder PH. However, the thermal conductivity is high. Oil or grease may be used. By using a liquid having a high thermal conductivity, the heat of the substrate P can be released more effectively. On the other hand, when the liquid interposed between the substrate P and the substrate holder PH is different from the exposure liquid LQ for forming the immersion area AR2, the liquid interposed between the substrate P and the substrate holder PH. If, for example, mixed into the liquid LQ in the liquid immersion area AR2 through the gap A or the like, the liquid in the liquid immersion area AR2 may stagnate so that the exposure light EL or the measurement light La does not reach the substrate P well. There is sex. Therefore, the occurrence of the above inconvenience is prevented by making the liquid interposed between the substrate P and the substrate holder PH and the exposure liquid LQ for forming the liquid immersion area AR2 the same liquid (pure water). can do.

  Further, the temperature of the liquid interposed between the substrate P and the substrate holder PH is substantially the same as the temperature of the liquid LQ in the liquid immersion area AR2, and thus the temperature in the chamber apparatus in which the exposure apparatus EX is accommodated. Is preferred. If the temperature of the liquid on the lower side of the substrate P and the temperature of the liquid LQ in the immersion area AR2 on the substrate P are different, a temperature change or temperature distribution occurs in the liquid LQ on the substrate P. By making the temperature of the liquid and the temperature of the liquid LQ on the substrate P substantially the same, it is possible to prevent inconveniences in which a temperature change and a temperature distribution occur in the liquid LQ in the liquid immersion area AR2 on the substrate P.

  7 and FIG. 8, the functional layer 35 is used together. However, even if the functional layer 35 is not used, the substrate can be obtained by interposing a gas or liquid between the substrate P and the substrate holder PH. The heat of P can be efficiently released to the substrate holder PH side.

  In the embodiment of FIGS. 7 and 8, the substrate P is more efficiently provided that the heated gas or liquid between the substrate P and the substrate holder PH can be replaced with the unheated gas or liquid. Can release the heat.

  In the above-described embodiment, the peripheral wall portion 33 of the substrate holder PH may be substantially the same height as the support portion 34 so as to contact the substrate P. In this case, it is desirable to form the functional layer 35 also on the upper surface 33A of the peripheral wall 33.

  Further, in the above-described embodiment, the substrate holder PH that holds the substrate P by the plurality of pin-shaped support portions 34 is adopted, but the shape and arrangement of the support portion of the substrate holder PH is limited to the above-described embodiment. It is not a thing.

  In the above-described embodiment, the functional layer 35 is formed on the upper surface of the support portion 34 of the substrate holder PH to increase the thermal conductivity between the substrate P and the substrate holder PH. Instead of the layer 35, the back surface of the substrate P may be covered with a material that increases the thermal conductivity with the substrate holder PH. Of course, you may use together with the functional layer 35 of the substrate holder PH.

  As described above, the liquid LQ in the present embodiment is composed of pure water. Pure water has an advantage that it can be easily obtained in large quantities at a semiconductor manufacturing factory or the like and has no adverse effect on the photoresist, optical element (lens), etc. on the substrate P. In addition, pure water has no adverse effects on the environment, and since the impurity content is extremely low, it can be expected to clean the surface of the substrate P and the surface of the optical element provided on the front end surface of the projection optical system PL. . When the purity of pure water supplied from a factory or the like is low, the exposure apparatus may have an ultrapure water production device.

  The refractive index n of pure water (water) with respect to the exposure light EL having a wavelength of about 193 nm is said to be approximately 1.44. When ArF excimer laser light (wavelength 193 nm) is used as the light source of the exposure light EL, On the substrate P, the wavelength is shortened to 1 / n, that is, about 134 nm, and a high resolution can be obtained. Furthermore, since the depth of focus is enlarged by about n times, that is, about 1.44 times compared with that in the air, the projection optical system PL can be used when it is sufficient to ensure the same depth of focus as that in the air. The numerical aperture can be further increased, and the resolution is improved in this respect as well.

  As described above, when the liquid immersion method is used, the numerical aperture NA of the projection optical system may be 0.9 to 1.3. When the numerical aperture NA of the projection optical system becomes large in this way, the imaging performance may deteriorate due to the polarization effect with random polarized light conventionally used as exposure light. desirable. In that case, linearly polarized illumination is performed in accordance with the longitudinal direction of the line pattern of the mask (reticle) line-and-space pattern. From the mask (reticle) pattern, the S-polarized light component (TE-polarized light component), that is, the line pattern It is preferable that a large amount of diffracted light having a polarization direction component is emitted along the longitudinal direction. When the space between the projection optical system PL and the resist applied on the surface of the substrate P is filled with a liquid, the space between the projection optical system PL and the resist applied on the surface of the substrate P is filled with air (gas). Compared with the case where the transmittance of the diffracted light of the S-polarized component (TE-polarized component) contributing to the improvement of the contrast is high on the resist surface, the numerical aperture NA of the projection optical system exceeds 1.0. Even in this case, high imaging performance can be obtained. Further, it is more effective to appropriately combine a phase shift mask or an oblique incidence illumination method (particularly a die ball illumination method) or the like according to the longitudinal direction of the line pattern as disclosed in JP-A-6-188169. In particular, the combination of the linearly polarized illumination method and the diball illumination method is used when the periodic direction of the line-and-space pattern is limited to a predetermined direction, or when the hole pattern is densely aligned along the predetermined direction. It is effective when For example, when illuminating a halftone phase shift mask with a transmittance of 6% (a pattern with a half pitch of about 45 nm) using both the linearly polarized illumination method and the dieball illumination method, a dieball is formed on the pupil plane of the illumination system. If the illumination σ defined by the circumscribed circle of the two luminous fluxes is 0.95, the radius of each luminous flux on the pupil plane is 0.125σ, and the numerical aperture of the projection optical system PL is NA = 1.2, the randomly polarized light is The depth of focus (DOF) can be increased by about 150 nm rather than using it.

  Further, for example, an ArF excimer laser is used as the exposure light, and a fine line and space pattern (for example, a line and space of about 25 to 50 nm) is formed on the substrate by using the projection optical system PL with a reduction magnification of about 1/4. When exposing on P, depending on the structure of the mask M (for example, the fineness of the pattern and the thickness of chrome), the mask M acts as a polarizing plate due to the Wave guide effect, and the P-polarized component (TM polarized light) that lowers the contrast. More diffracted light of the S-polarized component (TE polarized component) is emitted from the mask M than the diffracted light of the component. In this case, it is desirable to use the above-mentioned linearly polarized illumination, but even if the mask M is illuminated with random polarized light, it is high even when the numerical aperture NA of the projection optical system PL is as large as 0.9 to 1.3. Resolution performance can be obtained.

  When an extremely fine line-and-space pattern on the mask M is exposed on the substrate P, the P-polarized component (TM-polarized component) is larger than the S-polarized component (TE-polarized component) due to the Wire Grid effect. For example, an ArF excimer laser is used as exposure light, and a line and space pattern larger than 25 nm is exposed on the substrate P using the projection optical system PL with a reduction magnification of about 1/4. In this case, since the diffracted light of the S polarization component (TE polarization component) is emitted from the mask M more than the diffracted light of the P polarization component (TM polarization component), the numerical aperture NA of the projection optical system PL is 0.9. High resolution performance can be obtained even when the value is as large as -1.3.

  Further, not only linearly polarized illumination (S-polarized illumination) matched to the longitudinal direction of the line pattern of the mask (reticle) but also a circle centered on the optical axis as disclosed in JP-A-6-53120. A combination of the polarization illumination method that linearly polarizes in the tangential (circumferential) direction and the oblique incidence illumination method is also effective. In particular, when the pattern of the mask (reticle) is not only a line pattern extending in a predetermined direction but also a plurality of line patterns extending in different directions (a mixture of line and space patterns having different periodic directions) Similarly, as disclosed in Japanese Patent Laid-Open No. 6-53120, an aperture of the projection optical system can be obtained by using both the polarization illumination method that linearly polarizes in the tangential direction of the circle centered on the optical axis and the annular illumination method. Even when the number NA is large, high imaging performance can be obtained. For example, a polarized illumination method and an annular illumination method (annular ratio) in which a half-tone phase shift mask having a transmittance of 6% (a pattern having a half pitch of about 63 nm) is linearly polarized in a tangential direction of a circle around the optical axis. 3/4), when the illumination σ is 0.95 and the numerical aperture of the projection optical system PL is NA = 1.00, the depth of focus (DOF) is more than that of using randomly polarized light. If the projection optical system has a numerical aperture NA = 1.2 with a pattern with a half pitch of about 55 nm, the depth of focus can be increased by about 100 nm.

  In the present embodiment, the optical element 2 is attached to the tip of the projection optical system PL, and the optical characteristics of the projection optical system PL, for example, aberration (spherical aberration, coma aberration, etc.) can be adjusted by this lens. The optical element attached to the tip of the projection optical system PL may be an optical plate used for adjusting the optical characteristics of the projection optical system PL. Alternatively, it may be a plane parallel plate that can transmit the exposure light EL.

  When the pressure between the optical element at the tip of the projection optical system PL generated by the flow of the liquid LQ and the substrate P is large, the optical element is not exchangeable but the optical element is moved by the pressure. It may be fixed firmly so that there is no.

  In the present embodiment, the space between the projection optical system PL and the surface of the substrate P is filled with the liquid LQ. However, for example, the liquid with the cover glass made of a plane-parallel plate attached to the surface of the substrate P is used. The structure which satisfy | fills LQ may be sufficient.

The liquid LQ of the present embodiment is water, but may be a liquid other than water. For example, when the light source of the exposure light EL is an F ₂ laser, the F ₂ laser light does not pass through water. The liquid LQ may be, for example, a fluorinated fluid such as perfluorinated polyether (PFPE) or fluorinated oil that can transmit F ₂ laser light. In this case, the lyophilic treatment is performed by forming a thin film with a substance having a molecular structure having a small polarity including fluorine, for example, at a portion in contact with the liquid LQ. In addition, as the liquid LQ, the liquid LQ is transmissive to the exposure light EL, has a refractive index as high as possible, and is stable with respect to the photoresist applied to the projection optical system PL and the surface of the substrate P (for example, Cedar). Oil) can also be used. Also in this case, the surface treatment is performed according to the polarity of the liquid LQ to be used.

  The substrate P in each of the above embodiments is not only a semiconductor wafer for manufacturing a semiconductor device, but also a glass substrate for a display device, a ceramic wafer for a thin film magnetic head, or an original mask or reticle used in an exposure apparatus. (Synthetic quartz, silicon wafer) or the like is applied.

  As the exposure apparatus EX, in addition to the step-and-scan type scanning exposure apparatus (scanning stepper) that scans and exposes the pattern of the mask M by moving the mask M and the substrate P synchronously, the mask M and the substrate P Can be applied to a step-and-repeat type projection exposure apparatus (stepper) in which the pattern of the mask M is collectively exposed while the substrate P is stationary and the substrate P is sequentially moved stepwise.

  Further, as the exposure apparatus EX, a reduced image of the first pattern is projected with the first pattern and the substrate P substantially stationary (for example, a refractive projection optical system that does not include a reflecting element at 1/8 reduction magnification). The present invention can also be applied to an exposure apparatus that performs batch exposure on the substrate P using the above. In this case, after that, with the second pattern and the substrate P substantially stationary, a reduced image of the second pattern is collectively exposed onto the substrate P by partially overlapping the first pattern using the projection optical system. It can also be applied to a stitch type batch exposure apparatus. Further, the stitch type exposure apparatus can be applied to a step-and-stitch type exposure apparatus in which at least two patterns are partially overlapped and transferred on the substrate P, and the substrate P is sequentially moved.

  The present invention can also be applied to a twin stage type exposure apparatus disclosed in Japanese Patent Application Laid-Open No. 10-163099, Japanese Patent Application Laid-Open No. 10-214783, and Japanese Translation of PCT International Publication No. 2000-505958.

  In the above-described embodiment, an exposure apparatus that locally fills the liquid between the projection optical system PL and the substrate P is employed. However, the present invention is disclosed in Japanese Patent Laid-Open No. 6-124873. It is also applicable to an immersion exposure apparatus that moves a stage holding a substrate to be exposed in a liquid tank.

  The type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern on the substrate P, but an exposure apparatus for manufacturing a liquid crystal display element or a display, a thin film magnetic head, an image sensor (CCD). ) Or an exposure apparatus for manufacturing reticles or masks.

  When using a linear motor (see USP5,623,853 or USP5,528,118) for the substrate stage PST and mask stage MST, use either an air levitation type using air bearings or a magnetic levitation type using Lorentz force or reactance force. Also good. Each stage PST, MST may be a type that moves along a guide, or may be a guideless type that does not have a guide.

  As a driving mechanism for each stage PST, MST, a planar motor that drives each stage PST, MST by electromagnetic force with a magnet unit having a two-dimensionally arranged magnet and an armature unit having a two-dimensionally arranged coil facing each other is provided. It may be used. In this case, either one of the magnet unit and the armature unit may be connected to the stages PST and MST, and the other of the magnet unit and the armature unit may be provided on the moving surface side of the stages PST and MST.

  As described in JP-A-8-166475 (USP 5,528,118), the reaction force generated by the movement of the substrate stage PST is not transmitted to the projection optical system PL, but mechanically using a frame member. You may escape to the floor (ground).

  As described in JP-A-8-330224 (US S / N 08 / 416,558), a frame member is used so that the reaction force generated by the movement of the mask stage MST is not transmitted to the projection optical system PL. May be mechanically released to the floor (ground).

  As described above, the exposure apparatus EX according to the present embodiment maintains various mechanical subsystems including the respective constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Manufactured by assembling. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  As shown in FIG. 9, a microdevice such as a semiconductor device includes a step 201 for designing a function / performance of the microdevice, a step 202 for producing a mask (reticle) based on the design step, and a substrate as a base material of the device. Manufacturing step 203, exposure processing step 204 for exposing the mask pattern onto the substrate by the exposure apparatus EX of the above-described embodiment, device assembly step (including dicing process, bonding process, packaging process) 205, inspection step 206, etc. It is manufactured after.

It is a schematic block diagram which shows one Embodiment of the exposure apparatus provided with the board | substrate holding member of this invention. It is a top view of the substrate stage provided with the substrate holding member. It is principal part sectional drawing which shows one Embodiment of the board | substrate holding member of this invention. It is a principal part expanded sectional view which shows one Embodiment of the board | substrate holding member of this invention. It is a principal part expanded sectional view which shows another embodiment of the board | substrate holding member of this invention. It is a principal part expanded sectional view which shows another embodiment of the board | substrate holding member of this invention. It is principal part sectional drawing which shows one Embodiment of the board | substrate holding member of this invention. It is principal part sectional drawing which shows one Embodiment of the board | substrate holding member of this invention. It is a flowchart figure which shows an example of the manufacturing process of a semiconductor device.

Explanation of symbols

33 ... peripheral wall, 34 ... pin-shaped support, 34A ... upper surface (contact surface), 35, 35 '... functional layer, 35A ... surface (contact surface), EL ... exposure light, EX ... exposure apparatus, LQ ... liquid, P ... Substrate, PH ... Substrate holder (substrate holding member), PL ... Projection optical system

Claims (15)

In a substrate holding member for holding the substrate, which is used in an exposure apparatus that exposes the substrate by irradiating the substrate with exposure light via a projection optical system and a liquid,
The substrate holding member, wherein the contact surface with the substrate is coated with a layer of a material that can be processed with higher surface accuracy than the base material of the substrate holding member. In a substrate holding member for holding the substrate, which is used in an exposure apparatus that exposes the substrate by irradiating the substrate with exposure light via a projection optical system and a liquid,
The substrate holding member, wherein a surface of the substrate holding member including a contact surface with the substrate is covered with a layer of a material having a higher thermal conductivity than a base material of the substrate holding member.   The substrate holding member according to claim 1, wherein the material can be mirror-finished on a contact surface with the substrate.   The substrate holding member according to claim 1, wherein the material includes a poreless material.   The substrate holding member according to claim 1, wherein the material includes silicon. In a substrate holding member for holding the substrate, which is used in an exposure apparatus that exposes the substrate by irradiating the substrate with exposure light via a projection optical system and a liquid,
The substrate holding member, wherein a contact surface with the substrate is covered with a layer of a metal material that is softer than a base material of the substrate holding member.   The substrate holding member according to claim 6, wherein the material is deformed so that a contact area with the substrate is increased when the substrate is held.   8. The substrate holding member according to claim 6, wherein the material includes at least one of gold and indium.   The substrate holding member according to claim 1, wherein the base material is made of silicon carbide. Having a peripheral wall and a plurality of pin-like support portions arranged inside the peripheral wall;
The contact surface with the said board | substrate contains the upper surface of the said pin-shaped support part, The board | substrate holding member as described in any one of Claims 1-9 characterized by the above-mentioned.   An exposure apparatus comprising the substrate holding member according to any one of claims 1 to 10. In an exposure apparatus that exposes the substrate by irradiating the substrate with exposure light via a projection optical system and a liquid,
A substrate holding member for holding the substrate;
An exposure apparatus, wherein a fluid having a higher thermal conductivity than air is interposed between the substrate holding member and the substrate.   The exposure apparatus according to claim 12, wherein the fluid includes the same liquid as the exposure liquid.   The exposure apparatus according to claim 12, wherein the fluid contains hydrogen or helium. 15. A device manufacturing method using the exposure apparatus according to any one of claims 11 to 14.

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