TWI468875B - Exposure unit and substrate exposure method - Google Patents

Exposure unit and substrate exposure method Download PDF

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TWI468875B
TWI468875B TW99140850A TW99140850A TWI468875B TW I468875 B TWI468875 B TW I468875B TW 99140850 A TW99140850 A TW 99140850A TW 99140850 A TW99140850 A TW 99140850A TW I468875 B TWI468875 B TW I468875B
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Taiwan
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adsorption
substrate
exposure
holding portion
axis
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TW99140850A
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Chinese (zh)
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TW201126280A (en
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Hiroshi Ikebuchi
Satoru Togawa
Shinichiro Nagai
Yasutaka Kiriu
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Nsk Technology Co Ltd
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/707Chucks, e.g. chucking or un-chucking operations or structural details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70791Large workpieces, e.g. glass substrates for flat panel displays or solar panels
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes

Description

曝光單元及基板之曝光方法Exposure unit and substrate exposure method

本發明係關於一種包括複數個曝光裝置本體之曝光單元及基板之曝光方法。The present invention relates to an exposure unit including a plurality of exposure apparatus bodies and an exposure method of a substrate.

先前,提出多種製造液晶顯示裝置或電漿顯示裝置等平板顯示裝置之彩色濾光片基板或TFT(Thin Film Transistor,薄膜電晶體)基板之曝光裝置。曝光裝置係藉由光罩保持部而保持光罩並且藉由基板保持部保持基板,且將兩者鄰近地相向配置。而且,藉由自光罩側照射圖案曝光用之光,將光罩上所描繪之光罩圖案曝光轉印至基板。又,例如於製造彩色濾光片基板之情形時,使用4個曝光裝置本體,依次將BM(black Matrix,黑矩陣)層、R(紅)、G(綠)、B(藍)該3個著色層曝光於基板。Conventionally, various types of exposure devices for manufacturing a color filter substrate or a TFT (Thin Film Transistor) substrate of a flat panel display device such as a liquid crystal display device or a plasma display device have been proposed. The exposure device holds the photomask by the mask holding portion and holds the substrate by the substrate holding portion, and the two are disposed adjacent to each other. Further, the reticle pattern drawn on the reticle is exposed and transferred to the substrate by illuminating the pattern exposure light from the mask side. Further, for example, in the case of manufacturing a color filter substrate, three BM (black matrix) layers, R (red), G (green), and B (blue) are sequentially used using four exposure apparatus main bodies. The colored layer is exposed to the substrate.

於專利文獻1、2所記載之曝光裝置中,基板保持部中,於吸附且保持基板之吸附面上具有複數個突起(壓紋),並且具有以形成複數個吸附區域之方式將相鄰之吸附區域隔離之隔離壁。而且,將規定方向上之突起與隔離壁之間隔、及相鄰之突起間之間隔設定成規定之寬度,藉此使基板之撓曲量大致相等,並使基板之平面度提高,從而抑制曝光不均。又,專利文獻3所記載之基板保持部中包括包圍吸引空間之周緣部、設置於吸引空間內之複數個突起、及自周緣部向突起延伸之支持部,且以較佳之平坦度保持基板。In the exposure apparatus described in Patent Documents 1 and 2, the substrate holding portion has a plurality of protrusions (embossing) on the adsorption surface that adsorbs and holds the substrate, and has a plurality of adsorption regions to be adjacent to each other. The isolation wall that isolates the adsorption zone. Further, the interval between the projections in the predetermined direction and the partition wall and the interval between the adjacent projections are set to a predetermined width, whereby the amount of deflection of the substrate is substantially equal, and the flatness of the substrate is improved to suppress the exposure. Uneven. Further, the substrate holding portion described in Patent Document 3 includes a peripheral portion surrounding the suction space, a plurality of projections provided in the suction space, and a support portion extending from the peripheral edge portion toward the projection, and the substrate is held at a preferable flatness.

[先前技術文獻][Previous Technical Literature] [專利文獻][Patent Literature]

[專利文獻1] JP-A-2009-212344[Patent Document 1] JP-A-2009-212344

[專利文獻2] JP-A-2009-198641[Patent Document 2] JP-A-2009-198641

[專利文獻3] WO2006/025341號[Patent Document 3] WO2006/025341

然而,於基板保持部之內部,為了使基板冷卻而流通有冷卻媒體,且於基板保持部吸附保持基板時,在複數個突起或隔離壁接觸之部分及未接觸之部分,基板上產生溫度變化。特別是於與連續之隔離壁接觸之基板之部分,存在與未接觸之部分之溫度變化變大,且於與隔離壁接觸之基板附近產生少許變形之可能性。因此,於使用複數個曝光裝置本體進行複數次曝光時,若隔離壁接觸之部分之位置於各曝光裝置本體上一致,則存在於已進行複數次曝光之產品之相應位置產生曝光不均或曝光分佈之偏差之問題。再者,於專利文獻1~3中所記載之基板保持部中,對上述問題未進行任何考慮。However, in the inside of the substrate holding portion, a cooling medium flows in order to cool the substrate, and when the substrate is held and held by the substrate holding portion, temperature changes occur on the substrate in a portion where the plurality of protrusions or the partition wall are in contact and the portion not in contact with the substrate. . In particular, in the portion of the substrate which is in contact with the continuous partition wall, there is a possibility that the temperature change of the portion which is not in contact with the portion becomes large, and a slight deformation occurs in the vicinity of the substrate which is in contact with the partition wall. Therefore, when a plurality of exposures are performed using a plurality of exposure device bodies, if the position of the portion in contact with the partition wall is uniform on the body of each exposure device, uneven exposure or exposure occurs at a corresponding position of the product that has been subjected to the plurality of exposures. The problem of deviation in distribution. Further, in the substrate holding portion described in Patent Documents 1 to 3, the above problems are not considered.

本發明係鑒於上述課題而完成者,其目的在於提供一種即便為已完成複數次曝光之產品亦可抑制因隔離壁而引起之曝光不均或曝光分佈之偏差的產生之曝光單元及基板之曝光方法。The present invention has been made in view of the above problems, and an object of the present invention is to provide an exposure unit and a substrate which can suppress occurrence of variations in exposure unevenness or exposure distribution caused by a partition wall even for products which have been subjected to a plurality of exposures. method.

根據本發明之實施形態,本發明之曝光單元係將複數個上述各光罩之圖案依次曝光轉印至上述基板者,且上述曝光單元包括複數個曝光裝置本體,該等複數個曝光裝置本體包括:保持具有上述圖案之光罩之光罩保持部、包含吸附並保持上述基板之吸附面之基板保持部、及照射曝光用光之照射部,且該等複數個曝光裝置本體藉由照射上述曝光用光而將上述光罩之圖案曝光轉印至上述基板上;於上述基板保持部之吸附面上設置用於將相鄰之吸附區域隔離而形成且可抵接於上述基板之背面之隔離壁、及於上述各吸附區域內可抵接於上述基板之背面之複數個突起,上述複數個曝光裝置本體之各基板保持部之吸附面具有大致相同之外形尺寸,並且上述各基板保持部之隔離壁形成於依每個上述曝光裝置本體而不同之位置。According to an embodiment of the present invention, the exposure unit of the present invention sequentially exposes a plurality of patterns of the reticle to the substrate, and the exposure unit includes a plurality of exposure device bodies, and the plurality of exposure device bodies include a mask holding portion for holding the mask having the pattern, a substrate holding portion for adsorbing and holding the adsorption surface of the substrate, and an irradiation portion for irradiating the exposure light, wherein the plurality of exposure device bodies are irradiated with the exposure Exposing and transferring the pattern of the mask to the substrate by light; and providing a partition wall formed on the adsorption surface of the substrate holding portion for isolating the adjacent adsorption regions and abutting against the back surface of the substrate And a plurality of protrusions that can abut against the back surface of the substrate in each of the adsorption regions, wherein the adsorption surfaces of the substrate holding portions of the plurality of exposure device bodies have substantially the same outer shape, and the isolation of the substrate holding portions The wall is formed at a different position depending on the body of each of the above exposure devices.

根據本發明之實施形態,本發明之曝光方法係使用複數個曝光裝置本體將各光罩之圖案依次曝光於基板者,該等複數個曝光裝置本體包括保持具有圖案之上述光罩之光罩保持部、具有吸附且保持上述基板之吸附面之基板保持部、及照射曝光用光之照射部,且藉由照射上述曝光用光而將上述光罩之圖案曝光轉印至上述基板上,且,上述曝光方法包括如下步驟:以使將上述吸附面之相鄰之吸附區域隔離之隔離壁於依每個上述曝光裝置本體而不同位置上與上述基板之背面抵接之方式,藉由上述複數個曝光裝置本體依次曝光上述基板。According to an embodiment of the present invention, the exposure method of the present invention uses a plurality of exposure device bodies to sequentially expose the patterns of the reticle to the substrate, and the plurality of exposure device bodies include a reticle holding to maintain the reticle having the pattern. a portion having a substrate holding portion that adsorbs and holds the adsorption surface of the substrate, and an irradiation portion that irradiates the exposure light, and irradiates the pattern of the mask onto the substrate by irradiating the exposure light, and The exposure method includes the steps of: abutting the partition wall separating the adjacent adsorption regions of the adsorption surface from the back surface of the substrate at different positions of each of the exposure device bodies, by the plurality of The exposure device body sequentially exposes the substrate.

根據本發明之曝光單元,形成於複數個曝光裝置本體之各吸附面的隔離壁係形成於每個曝光裝置本體中之不同之 位置,故而即便為已完成複數次曝光之產品亦可抑制因隔離壁而引起之曝光不均或曝光分佈之偏差的產生。According to the exposure unit of the present invention, the partition walls formed on the respective adsorption faces of the plurality of exposure device bodies are formed in different bodies of each exposure device. Since the position is such that the product having been subjected to the plurality of exposures can suppress the unevenness of the exposure due to the partition wall or the deviation of the exposure distribution.

又,根據本發明之基板之曝光方法,由於基板係各隔離壁於每個曝光裝置本體中之不同的位置與基板之背面抵接,且藉由複數個曝光裝置本體依次曝光,故而即便為已完成複數次曝光之產品亦可抑制產生因隔離壁而引起之曝光不均或曝光分佈之偏差的產生。Moreover, according to the exposure method of the substrate of the present invention, since the partition walls of the substrate are in contact with the back surface of the substrate at different positions in the body of each exposure device, and are sequentially exposed by the plurality of exposure device bodies, even if The product which completes the plurality of exposures can also suppress the occurrence of variations in exposure unevenness or exposure distribution caused by the partition walls.

[第1實施例][First Embodiment]

以下,根據圖式對本發明之第1實施例之曝光單元及基板之曝光方法進行詳細說明。Hereinafter, the exposure unit and the exposure method of the substrate according to the first embodiment of the present invention will be described in detail based on the drawings.

如圖1所示,本發明之曝光單元1包括:第1鄰近曝光裝置本體2,其對第1層進行曝光;第2鄰近曝光裝置本體3,其對第2層進行曝光;第3鄰近曝光裝置本體4,其對第3層進行曝光;以及第4鄰近曝光裝置本體5,其對第4層進行曝光。再者,使用於塗佈機、預對準、顯影等前處理及後處理步驟中之裝置、及搬送基板之搬送裝置等均省略圖示。又,第1~第4鄰近曝光裝置本體2、3、4、5只要為下述之基板保持部之吸附面為不同之構成即可,故而以下僅對第1鄰近曝光裝置本體2進行詳述。As shown in FIG. 1, the exposure unit 1 of the present invention comprises: a first adjacent exposure device body 2 for exposing the first layer; a second adjacent exposure device body 3 for exposing the second layer; and a third adjacent exposure The apparatus body 4 exposes the third layer; and the fourth adjacent exposure apparatus body 5 exposes the fourth layer. Further, the apparatus used in the pre-processing and post-processing steps such as the coater, the pre-alignment, and the development, and the transport apparatus for transporting the substrate are omitted. In addition, the first to fourth proximity exposure apparatus main bodies 2, 3, 4, and 5 may be configured such that the adsorption surfaces of the substrate holding portions described below are different. Therefore, only the first adjacent exposure apparatus main body 2 will be described in detail below. .

如圖2所示,第1鄰近曝光裝置本體2包括:光罩保持部10,其保持光罩M;基板保持部20,其保持玻璃基板(被曝光材)W;照明光學系統30,其作為圖案曝光用之照射機構;基板保持部移動機構40,其使基板保持部20於X軸、Y軸、Z軸方向移動,且進行基板保持部20之傾斜調整;以及裝置基底50,其支持光罩保持部10及基板保持部移動機構40。As shown in FIG. 2, the first proximity exposure apparatus body 2 includes a mask holding portion 10 that holds a mask M, a substrate holding portion 20 that holds a glass substrate (exposed material) W, and an illumination optical system 30 that functions as Irradiation mechanism for pattern exposure; substrate holding portion moving mechanism 40 that moves substrate holding portion 20 in the X-axis, Y-axis, and Z-axis directions, and performs tilt adjustment of substrate holding portion 20; and device substrate 50 that supports light The cover holding portion 10 and the substrate holding portion moving mechanism 40.

再者,玻璃基板W(以下,簡稱為「基板W」)係與光罩M相向配置,且為了對描繪在該光罩M之光罩圖案進行曝光轉印,而於表面(光罩M之相向面側)塗佈有光敏劑。又,光罩M包含熔融石英,且形成為長方形狀。Further, the glass substrate W (hereinafter simply referred to as "substrate W") is disposed to face the mask M, and is used for exposure transfer of the mask pattern drawn on the mask M to the surface (mask M) The facing side is coated with a photosensitizer. Further, the photomask M contains fused silica and is formed in a rectangular shape.

為了便於說明而自照明光學系統30開始進行說明,照明光學系統30包括:例如高壓水銀燈31,其係紫外線照射用光源;凹面鏡32,其對自該高壓水銀燈31照射之光進行聚光;兩種光學積分器33,其等可切換自如地配置於該凹面鏡32之焦點附近;平面鏡35、36及球面鏡37,其等用以改變光路之方向;以及曝光控制用快門34,其配置於該平面鏡36與光學積分器33之間,且對照射光路進行開閉控制。For convenience of explanation, the illumination optical system 30 includes, for example, a high pressure mercury lamp 31 which is a light source for ultraviolet irradiation, and a concave mirror 32 which condenses light irradiated from the high pressure mercury lamp 31; The optical integrator 33 is rotatably disposed near the focus of the concave mirror 32; the plane mirrors 35, 36 and the spherical mirror 37 are used to change the direction of the optical path; and the exposure control shutter 34 is disposed on the plane mirror 36. The optical path is controlled between the optical integrator 33 and the optical path.

而且,於照明光學系統30中,若在曝光時曝光控制用快門34受到打開控制,則自高壓水銀燈31照射之光經過圖2所示之光路L而垂直照射至光罩M及基板W之表面,從而作為圖案曝光用之平行光來使用。藉此,光罩M之光罩圖案曝光轉印至基板W上。Further, in the illumination optical system 30, if the exposure control shutter 34 is subjected to the opening control at the time of exposure, the light irradiated from the high pressure mercury lamp 31 is vertically irradiated to the surfaces of the mask M and the substrate W through the optical path L shown in FIG. Therefore, it is used as parallel light for pattern exposure. Thereby, the mask pattern of the mask M is exposed and transferred onto the substrate W.

如圖2~圖4所示,光罩保持部10包括:光罩保持部基底11,其於中央部形成有矩形形狀之開口部11a;光罩保持框12,其可於X軸、Y軸、θ方向移動地安裝於光罩保持部基底11之開口部11a;夾盤部14,其安裝於光罩保持框12上,並吸附保持光罩M;以及光罩位置調整機構16,其使光罩保持框12及夾盤部於X軸、Y軸、θ方向移動,並調整保持於該光罩保持框12上之光罩M之位置。As shown in FIGS. 2 to 4, the mask holding portion 10 includes a mask holding portion base 11 having a rectangular opening portion 11a formed at a central portion thereof, and a mask holding frame 12 which is slidable on the X-axis and the Y-axis. The θ direction is movably attached to the opening 11a of the reticle holder base 11; the chuck portion 14 is attached to the reticle holding frame 12, and the reticle M is sucked and held; and the reticle position adjusting mechanism 16 The mask holding frame 12 and the chuck portion are moved in the X-axis, the Y-axis, and the θ direction, and the position of the mask M held by the mask holding frame 12 is adjusted.

光罩保持部基底11係藉由立設於裝置基底50上之支柱51、及設置於支柱51之上端部之Z軸移動裝置52而可於Z軸方向移動地得到支持,且配置於基板保持部20之上方。Z軸移動裝置52係例如包括包含馬達及滾珠螺桿等之電動致動器、或空壓氣缸等,且進行單純之上下動作,藉此使光罩保持部10升降至規定之位置。再者,Z軸移動裝置52係於光罩M之更換、或工件夾盤21之清掃等時使用。The mask holding base 11 is supported by the support 51 that is erected on the apparatus base 50 and the Z-axis moving device 52 provided at the upper end of the support 51 in the Z-axis direction, and is disposed on the substrate. Above the department 20. The Z-axis moving device 52 includes, for example, an electric actuator including a motor and a ball screw, or an air compressor cylinder, and performs a simple upper and lower operation to raise and lower the mask holding portion 10 to a predetermined position. Further, the Z-axis moving device 52 is used when the photomask M is replaced or the workpiece chuck 21 is cleaned or the like.

光罩位置調整機構16包括:1台Y軸方向驅動裝置16y,其安裝於沿光罩保持框12之X軸方向之一邊;以及2台X軸方向驅動裝置16x,其等安裝於沿光罩保持框12之Y軸方向之一邊。The reticle position adjusting mechanism 16 includes: one Y-axis direction driving device 16y mounted on one side in the X-axis direction of the reticle holding frame 12; and two X-axis direction driving devices 16x, which are mounted on the reticle One side of the frame 12 in the Y-axis direction is maintained.

而且,光罩位置調整機構16中,藉由使1台Y軸方向驅動裝置16y驅動而使光罩保持框12於Y軸方向移動,藉由相同地使2台X軸方向驅動裝置16x驅動而使光罩保持框12於X軸方向移動。又,藉由驅動2台X軸方向驅動裝置16x中之任一者而使光罩保持框12於θ方向移動(圍繞Z軸之旋轉)。In the reticle position adjustment mechanism 16, the reticle holding frame 12 is moved in the Y-axis direction by driving one Y-axis direction driving device 16y, and the two X-axis direction driving devices 16x are driven in the same manner. The reticle holding frame 12 is moved in the X-axis direction. Further, the shutter holding frame 12 is moved in the θ direction (rotation around the Z axis) by driving either of the two X-axis direction driving devices 16x.

進而,如圖4所示,於光罩保持部基底11之上表面設置有測定光罩M與基板W之相向面間的間隙之間隙感測器17、及用以確認保持於夾盤部14的光罩M之安裝位置之光罩用對準排列相機18。該等間隙感測器17及光罩用對準排列相機18係經由移動機構19而可於X軸、Y軸方向移動地被保持,且配置於光罩保持框12內。Further, as shown in FIG. 4, a gap sensor 17 for measuring a gap between the opposing faces of the mask M and the substrate W is provided on the upper surface of the mask holding base 11 and for confirming the holding on the chuck portion 14. The reticle of the mounting position of the reticle M is aligned with the camera 18. The gap sensor 17 and the aligning alignment camera 18 for the reticle are held in the X-axis and Y-axis directions via the moving mechanism 19, and are placed in the reticle holding frame 12.

再者,如圖4所示,於光罩保持部基底11之上表面,在光罩保持部基底11之開口部11a之X軸方向之兩端部設置有根據需要而對光罩M之兩端部進行遮蔽之遮蔽孔徑38。該遮蔽孔徑38係藉由包含馬達、滾珠螺桿、及線性導軌等之遮蔽孔徑驅動機構39而可於X軸方向移動,且對光罩M之兩端部之遮蔽面積進行調整。再者,遮蔽孔徑38可不僅設置於開口部11a之X軸方向之兩端部,而且亦同樣設置於開口部11a之Y軸方向之兩端部。Further, as shown in FIG. 4, on the upper surface of the base portion 11 of the mask holding portion 11, two ends of the mask M are provided on both ends of the opening portion 11a of the mask holding portion base 11 in the X-axis direction as needed. The end is shielded by a shadow aperture 38. The shielding aperture 38 is movable in the X-axis direction by a shield aperture driving mechanism 39 including a motor, a ball screw, and a linear guide, and adjusts the shielding area of both ends of the mask M. Further, the shielding hole 38 may be provided not only at both end portions of the opening portion 11a in the X-axis direction but also at both end portions of the opening portion 11a in the Y-axis direction.

如圖2及圖3所示,基板保持部20係配置於基板保持部移動機構40上,且具備工件夾盤21,於該工件夾盤21之上表面具有用以將基板W保持於基板保持部20之吸附面22。再者,工件夾盤21係藉由真空吸附而保持基板W。As shown in FIGS. 2 and 3, the substrate holding portion 20 is disposed on the substrate holding portion moving mechanism 40, and includes a workpiece chuck 21 having a surface on the upper surface of the workpiece chuck 21 for holding the substrate W on the substrate. The adsorption surface 22 of the portion 20. Further, the workpiece chuck 21 holds the substrate W by vacuum suction.

如圖2及圖3所示,基板保持部移動機構40包括:Y軸進給機構41,其使基板保持部20於Y軸方向移動;X軸進給機構42,其使基板保持部20於X軸方向移動;以及Z-傾斜調整機構43,其進行基板保持部20之傾斜調整,並且使基板保持部20於Z軸方向微動。As shown in FIGS. 2 and 3, the substrate holding portion moving mechanism 40 includes a Y-axis feeding mechanism 41 that moves the substrate holding portion 20 in the Y-axis direction, and an X-axis feeding mechanism 42 that causes the substrate holding portion 20 to The X-axis direction is moved; and the Z-tilt adjustment mechanism 43 performs the tilt adjustment of the substrate holding portion 20, and the substrate holding portion 20 is slightly moved in the Z-axis direction.

Y軸進給機構41包括:一對線性導軌44,其等沿Y軸方向而設置於裝置基底50之上表面;Y軸平台45,其藉由線性導軌44而可於Y軸方向移動地予以支持;以及Y軸進給驅動裝置46,其使Y軸平台45於Y軸方向移動。而藉由使Y軸進給驅動裝置46之馬達46c驅動,並使滾珠螺桿軸46b旋轉,藉此使Y軸平台45連同滾珠螺桿螺母46a一併沿線性導軌44之導向軌道44a移動,從而使基板保持部20於Y軸方向移動。The Y-axis feed mechanism 41 includes a pair of linear guides 44 that are disposed on the upper surface of the apparatus base 50 in the Y-axis direction, and a Y-axis stage 45 that is movable in the Y-axis direction by the linear guides 44. Supported; and a Y-axis feed drive 46 that moves the Y-axis stage 45 in the Y-axis direction. By driving the motor 46c of the Y-axis feed driving device 46 and rotating the ball screw shaft 46b, the Y-axis table 45 is moved along with the ball screw nut 46a along the guide rail 44a of the linear guide 44, thereby The substrate holding portion 20 moves in the Y-axis direction.

又,X軸進給機構42包括:一對線性導軌47,其等沿X軸方向而設置於Y軸平台45之上表面;X軸平台48,其藉由線性導軌47而可於X軸方向移動地予以支持;以及X軸進給驅動裝置49,其使X軸平台48於X軸方向移動。而藉由使X軸進給驅動裝置49之馬達49c驅動,並使滾珠螺桿軸49b旋轉,藉此使X軸平台48連同未圖示之滾珠螺桿螺母一併沿線性導軌47之導向軌道47a移動,並使基板保持部20於X軸方向移動。Further, the X-axis feed mechanism 42 includes a pair of linear guides 47 which are disposed on the upper surface of the Y-axis stage 45 in the X-axis direction, and an X-axis table 48 which is available in the X-axis direction by the linear guide 47. Mobilely supported; and an X-axis feed drive 49 that moves the X-axis table 48 in the X-axis direction. By driving the motor 49c of the X-axis feed driving device 49 and rotating the ball screw shaft 49b, the X-axis table 48 is moved along the guide rail 47a of the linear guide 47 together with a ball screw nut (not shown). The substrate holding portion 20 is moved in the X-axis direction.

Z-傾斜調整機構43包括:馬達43a,其設置於X軸平台48上;滾珠螺桿軸43b,其藉由馬達43a而旋轉驅動;楔狀螺母43c,其形成為楔狀,且螺合於滾珠螺桿軸43b;以及楔部43d,其以楔狀突設於基板保持部20之下表面,且卡合於楔狀螺母43c之傾斜面。而且,於本實施形態中,Z-傾斜調整機構43係於X軸平台48之X軸方向之一端側(圖1之近前側)設置2台、於另一端側設置1台(圖2之裏側,參照圖3),合計設置3台,且各自獨立地被驅動控制。再者,Z-傾斜調整機構43之設置數量係任意。The Z-tilt adjustment mechanism 43 includes a motor 43a that is disposed on the X-axis stage 48, a ball screw shaft 43b that is rotationally driven by a motor 43a, and a wedge nut 43c that is formed in a wedge shape and screwed to the ball The screw shaft 43b and the wedge portion 43d are protruded from the lower surface of the substrate holding portion 20 in a wedge shape, and are engaged with the inclined surface of the wedge nut 43c. Further, in the present embodiment, the Z-tilt adjustment mechanism 43 is provided on one side of the X-axis direction of the X-axis stage 48 (the front side of FIG. 1), and one on the other end side (the back side of FIG. 2). Referring to FIG. 3), three units are provided in total, and each is independently driven and controlled. Furthermore, the number of Z-tilt adjustment mechanisms 43 is arbitrary.

而且,Z-傾斜調整機構43係藉由馬達43a使滾珠螺桿軸43b旋轉驅動,藉此使楔狀螺母43c於X軸方向水平移動,且該水平移動運動藉由楔狀螺母43c及楔部43d之斜面作用而切換成高精度之上下微動運動,從而使楔部43d於Z方向微動。因此,藉由使3台Z-傾斜調整機構43僅以相同之量驅動,可使基板保持部20於Z軸方向微動,又,藉由使3台Z-傾斜調整機構43獨立地驅動,可進行基板保持部20之傾斜調整。藉此,可對基板保持部20之Z軸、傾斜方向之位置進行微調整而使光罩M與基板W保持規定之間隔而平行地相向。Further, the Z-tilt adjustment mechanism 43 rotationally drives the ball screw shaft 43b by the motor 43a, thereby horizontally moving the wedge nut 43c in the X-axis direction, and the horizontal movement movement is performed by the wedge nut 43c and the wedge portion 43d. The bevel is switched to a high-precision upper and lower fretting motion, so that the wedge portion 43d is slightly moved in the Z direction. Therefore, by driving the three Z-tilt adjustment mechanisms 43 by only the same amount, the substrate holding portion 20 can be slightly moved in the Z-axis direction, and the three Z-tilt adjustment mechanisms 43 can be independently driven. The tilt adjustment of the substrate holding portion 20 is performed. Thereby, the position of the Z-axis and the oblique direction of the substrate holding portion 20 can be finely adjusted, and the mask M and the substrate W can be opposed to each other at a predetermined interval in parallel.

進而,如圖2及圖3所示,於第1鄰近曝光裝置本體2中設置有檢測基板保持部20之位置的位置測定裝置即雷射測距裝置60。該雷射測距裝置60係對於驅動基板保持部移動機構40時產生之基板保持部20之移動距離進行測定者。Further, as shown in FIG. 2 and FIG. 3, the first proximity exposure apparatus main body 2 is provided with a laser distance measuring device 60 which is a position measuring device for detecting the position of the substrate holding portion 20. The laser distance measuring device 60 measures the moving distance of the substrate holding portion 20 which is generated when the substrate holding portion moving mechanism 40 is driven.

雷射測距裝置60包括:X軸用鏡64,其以固定於撐桿(未圖示)並沿基板保持部20之X軸方向側面的方式配設;Y軸用鏡65,其以固定於撐桿71並沿基板保持部20之Y軸方向側面的方式配設;X軸測距器(測距器)61及偏轉測定器(測距器)62,其等配設於裝置基底50之X軸方向端部,將雷射光(測量光)照射至X軸用鏡64,並接收藉由X軸用鏡64而反射之雷射光,從而測量基板保持部20之位置;以及1台Y軸測距器(測距器)63,其配設於裝置基底50之Y軸方向端部,將雷射光照射至Y軸用鏡65,並接收藉由Y軸用鏡65而反射之雷射光,從而測量基板保持部20之位置。The laser distance measuring device 60 includes an X-axis mirror 64 that is fixed to a stay (not shown) and disposed along a side surface of the substrate holding portion 20 in the X-axis direction; and a Y-axis mirror 65 for fixing The strut 71 is disposed along the side surface of the substrate holding portion 20 in the Y-axis direction; the X-axis distance measuring device (rangometer) 61 and the deflection measuring device (counter) 62 are disposed on the device substrate 50. The X-axis direction end portion irradiates the X-axis mirror 64 with the laser light (measuring light), and receives the laser light reflected by the X-axis mirror 64, thereby measuring the position of the substrate holding portion 20; and 1 Y A shaft range finder (range finder) 63 is disposed at an end portion of the apparatus base 50 in the Y-axis direction, irradiates the laser light to the Y-axis mirror 65, and receives the laser light reflected by the Y-axis mirror 65. Thereby, the position of the substrate holding portion 20 is measured.

而且,雷射測距裝置60係藉由自X軸測距器61、偏轉測定器62、及Y軸測距器63照射至X軸用鏡64、及Y軸用鏡65之雷射光由X軸用鏡64及Y軸用鏡65反射,而高精度地測量基板保持部20之X軸、Y軸方向之位置。又,X軸方向之位置資料係藉由X軸測距器61測定,θ方向之位置係藉由偏轉測定器62測定。再者,基板保持部20之位置係參考藉由雷射測距裝置60所測定之X軸方向位置、Y軸方向位置、及θ方向之位置,並藉由加以適當修正而算出。Further, the laser ranging device 60 is irradiated to the X-axis mirror 64 and the Y-axis mirror 65 from the X-axis range finder 61, the deflection finder 62, and the Y-axis range finder 63 by X. The shaft mirror 64 and the Y-axis mirror 65 reflect the position of the substrate holding portion 20 in the X-axis and Y-axis directions with high precision. Further, the positional data in the X-axis direction is measured by the X-axis range finder 61, and the position in the θ direction is measured by the deflection measuring device 62. Further, the position of the substrate holding portion 20 is calculated by referring to the position in the X-axis direction, the position in the Y-axis direction, and the position in the θ direction measured by the laser distance measuring device 60, and is appropriately corrected.

圖5(a)係示意性地表示第1鄰近曝光裝置本體2之工件夾盤21之吸附面之俯視圖,圖5(b)係圖5(a)之V部放大圖。於工件夾盤21之吸附面22上形成有獨立之7個吸附區域,即,第1~第7吸附區域80a、...、80g。中央之第1吸附區域80a與其外側之第2吸附區域80b係藉由四邊形狀之第1隔離壁81a隔離,第2吸附區域80b與其外側之第3吸附區域80c係藉由四邊形狀之第2隔離壁82a隔離。進而,第3吸附區域80c與形成於其外側之4個部位之第4~第7之吸附區域80d、80e、80f、80g係藉由四邊形狀之第3隔離壁83a隔離。Fig. 5(a) is a plan view schematically showing an adsorption surface of the workpiece chuck 21 of the first proximity exposure apparatus main body 2, and Fig. 5(b) is an enlarged view of a V portion of Fig. 5(a). On the adsorption surface 22 of the workpiece chuck 21, seven independent adsorption regions, that is, first to seventh adsorption regions 80a, ..., 80g are formed. The first adsorption region 80a in the center and the second adsorption region 80b on the outer side are separated by the first partition wall 81a having a rectangular shape, and the second adsorption region 80b and the third adsorption region 80c on the outer side are separated by the second shape of the quadrilateral shape. Wall 82a is isolated. Further, the third adsorption region 80c and the fourth to seventh adsorption regions 80d, 80e, 80f, and 80g of the four portions formed on the outer side are separated by the third partition wall 83a having a rectangular shape.

因此,第1吸附區域80a係藉由第1隔離壁81a而劃分,第2吸附區域80b係劃分於第1及第2隔離壁81a、82a之間,第3吸附區域80c係劃分於第2及第3隔離壁82a、83a之間。進而,第4~第7吸附區域80d、...、80g係藉由第3隔離壁83a、及成為吸附面22之外周緣之周緣壁84a而劃分。再者,周緣部84a之形狀係對應於長方形狀之基板W之尺寸,且對應於基板W之方向而進行第4~第7吸附區域80d~80g之吸附。Therefore, the first adsorption region 80a is divided by the first partition wall 81a, the second adsorption region 80b is divided between the first and second partition walls 81a and 82a, and the third adsorption region 80c is divided into the second and second partition regions 80c. Between the third partition walls 82a and 83a. Further, the fourth to seventh adsorption regions 80d, ..., 80g are divided by the third partition wall 83a and the peripheral wall 84a which is the outer periphery of the adsorption surface 22. Further, the shape of the peripheral portion 84a corresponds to the size of the rectangular substrate W, and the adsorption of the fourth to seventh adsorption regions 80d to 80g is performed in accordance with the direction of the substrate W.

又,於各吸附區域80a、...、80g內形成有具有與各隔離壁81a、82a、83a之高度等同之高度的複數個突起85,且各隔離壁81a、82a、83a與突起85可抵接於基板W之背面。又,去除各隔離壁81a、82a、83a與突起85之外的部分係成為各吸附區域80a、...、80g之低部86。再者,隔離壁81a、82a、83a與突起85之加工可為端銑刀等之切削,亦可為噴丸處理。Further, a plurality of protrusions 85 having heights equivalent to the heights of the partition walls 81a, 82a, and 83a are formed in the respective adsorption regions 80a, ..., 80g, and the partition walls 81a, 82a, 83a and the protrusions 85 are It abuts against the back surface of the substrate W. Further, portions excluding the partition walls 81a, 82a, and 83a and the projections 85 are formed as the lower portions 86 of the respective adsorption regions 80a, ..., 80g. Further, the processing of the partition walls 81a, 82a, 83a and the protrusions 85 may be cutting of an end mill or the like, or may be shot peening.

進而,於各吸附區域80a、...、80g內之各低部86之表面上,開設有複數個正負壓孔87a、...、87g。而且,於吸附基板W時,自該等正負壓孔87a、...、87g進行真空吸引,藉此將由各吸附區域80a、...、80g之各低部86、各隔離壁81a、82a、83a及周壁部84a、及基板W之背面包圍的空間成為負壓。於卸載基板W時,為使基板W易於脫離,而對空間內進行大氣釋放或自正負壓孔87a、...、87g導入正壓。再者,於吸附基板W時,藉由自內側之第1吸附區域80a向外側緩慢地進行而可減小撓曲。又,於曝光基板W時,可於已藉由正負壓孔87a、...、87g進行真空吸引之狀態下進行,亦可於已局部性或整體性地解除各吸附區域之真空吸引之狀態下進行。Further, a plurality of positive and negative pressure holes 87a, ..., 87g are opened on the surfaces of the respective lower portions 86 in the respective adsorption regions 80a, ..., 80g. Further, when the substrate W is adsorbed, vacuum suction is performed from the positive and negative pressure holes 87a, ..., 87g, whereby the lower portions 86 of the respective adsorption regions 80a, ..., 80g, the partition walls 81a, The spaces surrounded by the 82a, 83a, the peripheral wall portion 84a, and the back surface of the substrate W are negative pressures. When the substrate W is unloaded, the substrate W is released from the atmosphere, and the atmosphere is released in the space or positive pressure is introduced from the positive and negative pressure holes 87a, ..., 87g. Further, when the substrate W is adsorbed, the deflection can be reduced by gradually proceeding outward from the first adsorption region 80a on the inner side. Further, when the substrate W is exposed, the vacuum suction may be performed by the positive and negative pressure holes 87a, ..., 87g, or the vacuum suction of each adsorption region may be released locally or collectively. In the state.

又,於吸附面22上形成有複數個銷孔(未圖示),該等銷孔係於藉由工件承載器(未圖示)將基板W搬送至加工夾盤21時使自吸附面22進出之複數個銷(未圖示)可進退。Further, a plurality of pin holes (not shown) are formed in the adsorption surface 22, and the pin holes are used to transfer the substrate W to the processing chuck 21 by a workpiece carrier (not shown) to cause the self-adsorption surface 22 A plurality of pins (not shown) that enter and exit can advance and retreat.

再者,由於吸附面22於各鄰近曝光裝置本體2、3、4、5中具有大致相同之外形尺寸,故而如圖1所示,最外側之周緣壁84a、...、84d之位置於各鄰近曝光裝置本體2~5中相同。Furthermore, since the adsorption surface 22 has substantially the same outer dimensions in each of the adjacent exposure apparatus bodies 2, 3, 4, 5, as shown in Fig. 1, the outermost peripheral walls 84a, ..., 84d are located at The same is true in each of the adjacent exposure device bodies 2 to 5.

此處,如圖1所示,第1~第4鄰近曝光裝置本體2~5之第1隔離壁81a、...、81d、第2隔離壁82a、...、82d、及第3隔離壁83a、...、83d係分別形成於彼此不同之位置。Here, as shown in FIG. 1, the first partition walls 81a, ..., 81d, the second partition walls 82a, ..., 82d, and the third partition of the first to fourth adjacent exposure apparatus bodies 2 to 5 are provided. The walls 83a, ..., 83d are formed at positions different from each other, respectively.

因此,於使用第1~第4鄰近曝光裝置本體2~5而進行第1~第4層之曝光轉印時,與基板W之背面接觸之各隔離壁81a、...、~81d、82a、...、82d、83a、...、83d之位置各自不同。圖6係將於第4鄰近曝光裝置本體5之加工夾盤21之吸附面22載置有基板W時的圖1之VId部、第1~第3鄰近曝光裝置本體2~4之第2及第3隔離壁82a、...、82c、83a、...、83c與基板W接觸之位置的圖1之VIa~VId部藉由一點鏈線重疊而表示。Therefore, when the first to fourth adjacent exposure apparatus main bodies 2 to 5 are used, the partition walls 81a, ..., ~81d, 82a which are in contact with the back surface of the substrate W are subjected to the exposure transfer of the first to fourth layers. The positions of ..., 82d, 83a, ..., 83d are different. 6 is a second portion of the VId portion of FIG. 1 and the first to third adjacent exposure device bodies 2 to 4 when the substrate W is placed on the adsorption surface 22 of the processing chuck 21 of the fourth proximity exposure device main body 5. The portions VIa to VId of Fig. 1 in which the third partition walls 82a, ..., 82c, 83a, ..., 83c are in contact with the substrate W are indicated by a single chain line overlap.

若使用如上所述般構成之第1~第4鄰近曝光裝置本體2、...、5向基板W進行第1~第4層之曝光轉印,則於隔離壁之位置上,藉由溫度變化之影響而使基板產生少許變形,但由於隔離壁81a、...、~81d、82a、...82d、83a、...、83d之位置於4個曝光裝置本體2、...、5中各自不同,故而不存在於基板W上被目測確認為曝光不均之情形,而且,可抑制曝光分佈之偏差的產生。再者,周緣壁84a、...、84d接觸之基板W的位置係成為圖案曝光轉印至基板W之圖案區域之外側,故而即便各曝光裝置本體2、3、4、5之周緣壁之位置相同亦不會影響曝光精度。When the first to fourth proximity exposure apparatus main bodies 2, ..., 5 configured as described above are subjected to the exposure transfer of the first to fourth layers to the substrate W, the temperature is placed at the position of the partition wall by the temperature. The substrate is slightly deformed by the influence of the change, but the positions of the partition walls 81a, ..., -81d, 82a, ... 82d, 83a, ..., 83d are in the four exposure device bodies 2, ... Since the difference between the five and the fifth is not present on the substrate W, it is visually confirmed that the exposure is uneven, and the occurrence of variations in the exposure distribution can be suppressed. Further, the position of the substrate W which is in contact with the peripheral walls 84a, ..., 84d is transferred to the outside of the pattern region of the substrate W by pattern exposure, so that even the peripheral walls of the respective exposure device bodies 2, 3, 4, 5 The same position will not affect the exposure accuracy.

再者,本發明並不限定於上述各實施形態,可於不脫離本發明之要旨之範圍內進行適當變更。The present invention is not limited to the embodiments described above, and may be appropriately modified without departing from the spirit and scope of the invention.

於上述實施形態中,隔離壁係藉由直線形狀之連續部分而形成,突起係藉由正方形狀而形成,但亦可如圖7及圖8所示般變更成各種形狀。In the above embodiment, the partition wall is formed by a continuous portion of a linear shape, and the projections are formed by a square shape, but may be changed into various shapes as shown in Figs. 7 and 8 .

例如,如圖7(a)~(h)所示,隔離壁90亦可藉由連續部分90a、及於該連續部分90a之兩側延伸於與連續部分90a正交之方向的延伸部分90b構成。藉此,可較小隔離壁90附近之基板W之非接觸部分的撓曲,且可使光罩M與基板W之間隙量更均勻化,從而可抑制曝光不均或曝光分佈之偏差。For example, as shown in Figs. 7(a) to (h), the partition wall 90 may be constituted by a continuous portion 90a and an extending portion 90b extending in a direction orthogonal to the continuous portion 90a on both sides of the continuous portion 90a. . Thereby, the deflection of the non-contact portion of the substrate W in the vicinity of the partition wall 90 can be made small, and the gap amount between the mask M and the substrate W can be made more uniform, so that variations in exposure unevenness or exposure distribution can be suppressed.

具體而言,如圖7(a)、(d)~(h)所示,隔離壁90亦可藉由連續部分90a、及位於該連續部分90a之兩側向突起91延伸之延伸部分90b構成,且如圖7(b)所示,隔離壁90之延伸部分90b亦可設為向於隔離壁90之連續部分90a延伸之方向上鄰接的突起91間之中間位置延伸。又,如圖7(c)所示,連續部分90a之一側之延伸部分90b亦可設為向突起91延伸,且另一側之延伸部分90b向突起91間之中間位置延伸。Specifically, as shown in FIGS. 7(a), (d) to (h), the partition wall 90 may also be constituted by a continuous portion 90a and an extending portion 90b extending toward the protrusion 91 on both sides of the continuous portion 90a. As shown in Fig. 7(b), the extending portion 90b of the partition wall 90 may also be formed to extend to an intermediate position between the adjacent projections 91 in the direction in which the continuous portion 90a of the partition wall 90 extends. Further, as shown in Fig. 7(c), the extending portion 90b on one side of the continuous portion 90a may be extended to the projection 91, and the extending portion 90b on the other side may extend toward the intermediate position between the projections 91.

又,如圖7(d)、圖7(f)、圖7(g)所示,於連續部分90a延伸之方向上相鄰的延伸部分90b間之連續部分90a可根據端銑刀之形狀形成為彎曲形狀,又,如圖7(f)所示,連續部分90a亦可連成鋸齒狀而非直線狀。進而,如圖7(c)、圖7(d)、圖7(e)所示,延伸部分90b亦可於連續部分90a之兩側,以彼此之延伸之位置不同的方式形成,或於圖7(e)中,使延伸部分90b之前端以構成突起91之方式延伸。Further, as shown in Fig. 7 (d), Fig. 7 (f), and Fig. 7 (g), the continuous portion 90a between the adjacent extending portions 90b in the direction in which the continuous portion 90a extends may be formed according to the shape of the end mill In order to bend the shape, as shown in Fig. 7 (f), the continuous portion 90a may be connected in a zigzag shape instead of a straight line. Further, as shown in FIGS. 7(c), 7(d), and 7(e), the extending portion 90b may be formed on both sides of the continuous portion 90a in such a manner as to extend from each other, or in the drawing. In 7(e), the front end of the extended portion 90b is extended to constitute the projection 91.

進而,如圖7(a)~7(c)所示,使位於隔離壁90附近之突起91之間隔比位於與隔離壁90分離之部分的突起91之間隔更短。於隔離壁90與鄰近之突起91之間的間隔較大之情形時,存在非接觸部分之撓曲變大從而產生曝光不均之可能性,但如圖7(a)~圖7(c)所示,藉由縮短位於隔離壁90附近之突起91之間隔,可減小非接觸部分之撓曲,從而可抑制曝光不均。Further, as shown in FIGS. 7(a) to 7(c), the interval between the projections 91 located in the vicinity of the partition wall 90 is made shorter than the interval between the projections 91 located at a portion separated from the partition wall 90. When the interval between the partition wall 90 and the adjacent protrusion 91 is large, there is a possibility that the deflection of the non-contact portion becomes large to cause uneven exposure, but as shown in FIGS. 7(a) to 7(c). As shown, by shortening the interval between the projections 91 located in the vicinity of the partition wall 90, the deflection of the non-contact portion can be reduced, and uneven exposure can be suppressed.

又,如圖8(a)所示,隔離壁90可藉由連續部分90a、及於該連續部分90a之兩側向與連續部分90a分離並與連續部分90a正交之方向延伸的長方形部分90c構成,亦可如圖8(b)及圖8(c)所示般藉由2個或3個連續部分90a構成。如上所述,藉由利用複數個連續部分90a構成隔離壁,以分散與基板W之接觸部分從而難以受到溫度之影響,藉此可減小非接觸部分之撓曲。Further, as shown in Fig. 8(a), the partition wall 90 may be formed by a continuous portion 90a and a rectangular portion 90c which is separated from the continuous portion 90a and extends in a direction orthogonal to the continuous portion 90a on both sides of the continuous portion 90a. The configuration may be constituted by two or three continuous portions 90a as shown in Figs. 8(b) and 8(c). As described above, by forming the partition wall by the plurality of continuous portions 90a to disperse the contact portion with the substrate W, it is difficult to be affected by the temperature, whereby the deflection of the non-contact portion can be reduced.

進而,如圖8(d)~8(g)所示,隔離壁90亦可藉由連續部分90a、及於該連續部分90a之一側、或兩側沿連續部分90a不連續地延伸之長方形部分90d、90e或波浪線部分90f構成。即,隔離壁90可相對於連續部分90a對稱,亦可為非對稱。Further, as shown in Figs. 8(d) to 8(g), the partition wall 90 may have a rectangular shape extending discontinuously along the continuous portion 90a by the continuous portion 90a, and on one side of the continuous portion 90a or both sides. The portion 90d, 90e or the wavy line portion 90f is constructed. That is, the partition wall 90 may be symmetrical with respect to the continuous portion 90a or may be asymmetrical.

另外,如圖8(h)所示,隔離壁90亦可將如圓形或正方形之突起90g以埋在於形成隔離壁90之方向上鄰接的突起90g間之間隙的方式配置複數行,或如圖8(i)所示般使突起90i之間隔變窄而使不連續之突起90g、90i集中,藉此將相鄰之吸附區域隔離。Further, as shown in FIG. 8(h), the partition wall 90 may also arrange a plurality of rows such as a circular or square projection 90g so as to be buried in a gap between the adjacent projections 90g in the direction in which the partition wall 90 is formed, or as As shown in Fig. 8(i), the interval between the projections 90i is narrowed to concentrate the discontinuous projections 90g, 90i, thereby isolating the adjacent adsorption regions.

再者,各曝光裝置本體之隔離壁只要不是與基板之背面於相同之位置完全地重疊而接觸者即可,但亦可局部性地重疊而接觸。又,上述隔離壁90之形狀可適當組合使用。Further, the partition walls of the respective exposure apparatus main bodies may be in contact with each other without being completely overlapped with the back surface of the substrate, but may be partially overlapped and contacted. Further, the shape of the partition wall 90 described above can be used in combination as appropriate.

又,於本實施形態中,係採用使各鄰近曝光裝置本體之吸附面不同之構成,但亦可使成為圖案區域之外側的周緣部之寬度形成地較寬而使吸附面各自成為相同之構成,並使基板之黏合位置於複數個鄰近曝光裝置本體中稍微偏移而進行黏合。藉此,隔離壁於每個曝光裝置本體中之不同的位置與基板之背面抵接,從而可抑制曝光不均或曝光分佈之偏差的產生。再者,周緣部之寬度設計成比複數個鄰近曝光裝置本體間最大偏移量更寬。Further, in the present embodiment, the adsorption surface of each of the adjacent exposure apparatus bodies is different. However, the width of the peripheral edge portion on the outer side of the pattern region may be wide and the adsorption surfaces may be the same. And bonding the bonding position of the substrate to the plurality of adjacent exposure device bodies to be slightly offset. Thereby, the partition wall abuts against the back surface of the substrate at different positions in each of the exposure apparatus bodies, so that occurrence of variations in exposure unevenness or exposure distribution can be suppressed. Furthermore, the width of the peripheral portion is designed to be wider than the maximum offset between the plurality of adjacent exposure device bodies.

[第2實施例][Second Embodiment]

其次,根據圖9~圖17對本發明之第2實施例之曝光單元及基板之曝光方法進行詳細說明。Next, an exposure method of an exposure unit and a substrate according to a second embodiment of the present invention will be described in detail with reference to FIGS. 9 to 17.

如圖9所示,本發明之曝光單元1包括:第1鄰近曝光裝置本體2,其對第1層進行曝光;第2鄰近曝光裝置本體3,其對第2層進行曝光;第3鄰近曝光裝置本體4,其對第3層進行曝光;以及第4鄰近曝光裝置本體5,其對第4層進行曝光。再者,使用於塗佈機、預對準、顯影等前處理及後處理步驟中之裝置、及搬送基板之搬送裝置等均省略圖示。又,關於第1~第4鄰近曝光裝置本體2、3、4、5,只要下述基板保持部之吸附面為不同之構成即可,故而以下僅對第1鄰近曝光裝置本體2進行詳述。As shown in FIG. 9, the exposure unit 1 of the present invention comprises: a first adjacent exposure device body 2 for exposing the first layer; a second adjacent exposure device body 3 for exposing the second layer; and a third adjacent exposure The apparatus body 4 exposes the third layer; and the fourth adjacent exposure apparatus body 5 exposes the fourth layer. Further, the apparatus used in the pre-processing and post-processing steps such as the coater, the pre-alignment, and the development, and the transport apparatus for transporting the substrate are omitted. In addition, the first to fourth proximity exposure apparatus main bodies 2, 3, 4, and 5 may have different configurations in which the adsorption surfaces of the substrate holding portions are different. Therefore, only the first adjacent exposure apparatus main body 2 will be described in detail below. .

如圖10所示,第1鄰近曝光裝置本體2包括:光罩保持部10,其保持光罩M;基板保持部(基板台)20,其保持玻璃基板(被曝光材)W;照明光學系統30,其照射圖案曝光用之曝光用光;基板保持部移動機構40,其使基板保持部20於X軸、Y軸、Z軸方向移動,且進行基板保持部20之傾斜調整;以及裝置基底50,其支持光罩保持部10及基板保持部移動機構40。As shown in FIG. 10, the first proximity exposure apparatus main body 2 includes a mask holding portion 10 that holds a mask M, a substrate holding portion (substrate stage) 20 that holds a glass substrate (exposed material) W, and an illumination optical system. 30. Exposure light for exposure pattern exposure; substrate holding portion moving mechanism 40 for moving substrate holding portion 20 in X-axis, Y-axis, and Z-axis directions, and performing tilt adjustment of substrate holding portion 20; and device base 50, which supports the mask holding portion 10 and the substrate holding portion moving mechanism 40.

再者,玻璃基板W(以下,簡稱為「基板W」)係與光罩M相向配置,且為了對該光罩M上所描繪之光罩圖案進行曝光轉印,表面(光罩M之相向面側)塗佈有光敏劑。又,光罩M包含熔融石英,且形成為長方形狀。Further, the glass substrate W (hereinafter simply referred to as "substrate W") is disposed to face the mask M, and the surface of the mask M is oriented in order to perform exposure transfer on the mask pattern drawn on the mask M. The face side) is coated with a photosensitizer. Further, the photomask M contains fused silica and is formed in a rectangular shape.

為了便於說明而自照明光學系統30進行說明,照明光學系統30包括:例如高壓水銀燈31,其作為紫外線照射用之光源;凹面鏡32,其對自該高壓水銀燈31照射之光進行聚光;兩種光學積分器33,其等可切換自如地配置於該凹面鏡32之焦點附近;平面鏡35、36及球面鏡37,其等用以改變光路之方向;以及曝光控制用快門34,其配置於該平面鏡36與光學積分器33之間並對照射光路進行開閉控制。For convenience of explanation, the illumination optical system 30 includes, for example, a high pressure mercury lamp 31 as a light source for ultraviolet irradiation, and a concave mirror 32 that condenses light irradiated from the high pressure mercury lamp 31; The optical integrator 33 is rotatably disposed near the focus of the concave mirror 32; the plane mirrors 35, 36 and the spherical mirror 37 are used to change the direction of the optical path; and the exposure control shutter 34 is disposed on the plane mirror 36. The optical integrator 33 is controlled to open and close with respect to the illumination optical path.

而且,於照明光學系統30中,若在曝光時曝光控制用快門34受到打開控制,則自高壓水銀燈31照射之光經過圖10所示之光路L,作為圖案曝光用之平行光對保持於光罩保持部10之光罩M、進而對保持於基板保持部20之基板W之表面進行垂直照射。藉此,光罩M之光罩圖案曝光轉印至基板W上。Further, in the illumination optical system 30, when the exposure control shutter 34 is subjected to the opening control at the time of exposure, the light irradiated from the high pressure mercury lamp 31 passes through the optical path L shown in FIG. 10, and is held in the light as a parallel light for pattern exposure. The mask M of the cover holding portion 10 and the surface of the substrate W held by the substrate holding portion 20 are vertically irradiated. Thereby, the mask pattern of the mask M is exposed and transferred onto the substrate W.

如圖10~圖12所示,光罩保持部10包括:光罩保持部基底11,其於中央部形成有矩形形狀之開口部11a;光罩保持框12,其可於X軸、Y軸、θ方向移動地安裝於光罩保持部基底11之開口部11a;夾盤部14,其安裝於光罩保持框12,且吸附保持光罩M;以及光罩位置調整機構16,其使光罩保持框12及夾盤部於X軸、Y軸、θ方向移動,且調整該光罩保持框12上所保持之光罩M之位置。As shown in FIGS. 10 to 12, the mask holding portion 10 includes a mask holding portion base 11 having a rectangular opening portion 11a formed at a central portion thereof, and a mask holding frame 12 which is slidable on the X-axis and the Y-axis. And the opening portion 11a of the mask holding portion base 11 is movably moved in the θ direction; the chuck portion 14 is attached to the reticle holding frame 12, and the reticle holder absorbing and holding the reticle M; and the reticle position adjusting mechanism 16 for making light The cover holding frame 12 and the chuck portion are moved in the X-axis, the Y-axis, and the θ direction, and the position of the reticle M held by the reticle holding frame 12 is adjusted.

光罩保持部基底11係藉由立設於裝置基底50上之支柱51、及設置於支柱51之上端部之Z軸移動裝置52而可於Z軸方向移動地被支持,且配置於基板保持部20之上方。Z軸移動裝置52係例如包括包含馬達及滾珠螺桿等之電動致動器、或空壓氣缸等,並進行單純之上下動作,藉此使光罩保持部10升降至規定之位置。再者,Z軸移動裝置52係於光罩M之更換或工件夾盤21之清掃等時使用。The mask holding portion base 11 is supported by the support 51 that is erected on the apparatus base 50 and the Z-axis moving device 52 provided at the upper end of the support 51, and is movably supported in the Z-axis direction. Above the department 20. The Z-axis moving device 52 includes, for example, an electric actuator including a motor and a ball screw, or an air compressor cylinder, and performs a simple upper and lower operation to raise and lower the mask holding portion 10 to a predetermined position. Further, the Z-axis moving device 52 is used when the mask M is replaced or the workpiece chuck 21 is cleaned or the like.

光罩位置調整機構16包括:1台Y軸方向驅動裝置16y,其安裝於沿光罩保持框12之X軸方向之一邊;以及2台X軸方向驅動裝置16x,其等安裝於沿光罩保持框12之Y軸方向之一邊。The reticle position adjusting mechanism 16 includes: one Y-axis direction driving device 16y mounted on one side in the X-axis direction of the reticle holding frame 12; and two X-axis direction driving devices 16x, which are mounted on the reticle One side of the frame 12 in the Y-axis direction is maintained.

而且,光罩位置調整機構16中,藉由使1台Y軸方向驅動裝置16y驅動而使光罩保持框12於Y軸方向移動,藉由相同地使2台X軸方向驅動裝置16x驅動而使光罩保持框12於X軸方向移動。又,藉由驅動2台X軸方向驅動裝置16x中之任一者而使光罩保持框12於θ方向移動(圍繞Z軸之旋轉)。In the reticle position adjustment mechanism 16, the reticle holding frame 12 is moved in the Y-axis direction by driving one Y-axis direction driving device 16y, and the two X-axis direction driving devices 16x are driven in the same manner. The reticle holding frame 12 is moved in the X-axis direction. Further, the shutter holding frame 12 is moved in the θ direction (rotation around the Z axis) by driving either of the two X-axis direction driving devices 16x.

進而,如圖12所示,於光罩保持部基底11之上表面設置有測定光罩M與基板W之相向面間的間隙之間隙感測器17、及用以確認保持於夾盤部14的光罩M之安裝位置之光罩用對準排列相機18。該等間隙感測器17及光罩用對準排列相機18係經由移動機構19而可於X軸、Y軸方向移動地被保持,且配置於光罩保持框12內。Further, as shown in FIG. 12, a gap sensor 17 for measuring a gap between the opposing faces of the mask M and the substrate W is provided on the upper surface of the mask holding base 11 and for confirming the holding on the chuck portion 14. The reticle of the mounting position of the reticle M is aligned with the camera 18. The gap sensor 17 and the aligning alignment camera 18 for the reticle are held in the X-axis and Y-axis directions via the moving mechanism 19, and are placed in the reticle holding frame 12.

再者,如圖12所示,於光罩保持部基底11之上表面,在光罩保持部基底11之開口部11a之X軸方向之兩端部設置有根據需要而對光罩M之兩端部進行遮蔽之遮蔽孔徑38。該遮蔽孔徑38係藉由包含馬達、滾珠螺桿、及線性導軌等之遮蔽孔徑驅動機構39而可於X軸方向移動,且對光罩M之兩端部之遮蔽面積進行調整。再者,遮蔽孔徑38可不僅設置於開口部11a之X軸方向之兩端部,而且亦同樣設置於開口部11a之Y軸方向之兩端部。Further, as shown in FIG. 12, on the upper surface of the mask holding base 11, two ends of the mask M are provided on both ends of the opening portion 11a of the mask holding base 11 in the X-axis direction as needed. The end is shielded by a shadow aperture 38. The shielding aperture 38 is movable in the X-axis direction by a shield aperture driving mechanism 39 including a motor, a ball screw, and a linear guide, and adjusts the shielding area of both ends of the mask M. Further, the shielding hole 38 may be provided not only at both end portions of the opening portion 11a in the X-axis direction but also at both end portions of the opening portion 11a in the Y-axis direction.

如圖10及圖11所示,基板保持部20係設置於基板保持部移動機構40上,且包含工件夾盤21,該工件夾盤21之上表面具有用以將基板W保持於基板保持部20之吸附面22。再者,工件夾盤21係藉由真空吸附而保持基板W。As shown in FIGS. 10 and 11, the substrate holding portion 20 is provided on the substrate holding portion moving mechanism 40, and includes a workpiece chuck 21 having an upper surface on which the substrate W is held in the substrate holding portion. 20 adsorption surface 22. Further, the workpiece chuck 21 holds the substrate W by vacuum suction.

如圖10及圖11所示,基板保持部移動機構40包括:Y軸進給機構41,其使基板保持部20於Y軸方向移動;X軸進給機構42,其使基板保持部20於X軸方向移動;以及Z-傾斜調整機構43,其進行基板保持部20之傾斜調整,並且使基板保持部20於Z軸方向微動。As shown in FIGS. 10 and 11, the substrate holding portion moving mechanism 40 includes a Y-axis feeding mechanism 41 that moves the substrate holding portion 20 in the Y-axis direction, and an X-axis feeding mechanism 42 that causes the substrate holding portion 20 to The X-axis direction is moved; and the Z-tilt adjustment mechanism 43 performs the tilt adjustment of the substrate holding portion 20, and the substrate holding portion 20 is slightly moved in the Z-axis direction.

Y軸進給機構41包括:一對線性導軌44,其等沿Y軸方向而設置於裝置基地50之上表面;Y軸平台45,其藉由線性導軌44而可於Y軸方向移動地得到支持;以及Y軸進給驅動裝置46,其使Y軸平台45於Y軸方向移動。而且,使Y軸進給驅動裝置46之馬達46c驅動,並使滾珠螺桿軸46b旋轉,藉此使Y軸平台45連同滾珠螺桿螺母46a一併沿線性導軌44之導向軌道44a移動,並使基板保持部20於Y軸方向移動。The Y-axis feed mechanism 41 includes a pair of linear guides 44 which are disposed on the upper surface of the apparatus base 50 in the Y-axis direction, and a Y-axis stage 45 which is movable in the Y-axis direction by the linear guides 44. Supported; and a Y-axis feed drive 46 that moves the Y-axis stage 45 in the Y-axis direction. Further, the motor 46c of the Y-axis feed driving device 46 is driven, and the ball screw shaft 46b is rotated, whereby the Y-axis table 45 is moved along with the ball screw nut 46a along the guide rail 44a of the linear guide 44, and the substrate is moved. The holding portion 20 moves in the Y-axis direction.

又,X軸進給機構42包括:一對線性導軌47,其等沿X軸方向而設置於Y軸平台45之上表面;X軸平台48,其藉由線性導軌47而可於X軸方向移動地得到支持;以及X軸進給驅動裝置49,其使X軸平台48於X軸方向移動。而且,使X軸進給驅動裝置49之馬達49c驅動,並使滾珠螺桿軸49b旋轉,藉此使X軸平台48連同未圖示之滾珠螺桿螺母一併沿線性導軌47之導向軌道47a移動,並使基板保持部20於X軸方向移動。Further, the X-axis feed mechanism 42 includes a pair of linear guides 47 which are disposed on the upper surface of the Y-axis stage 45 in the X-axis direction, and an X-axis table 48 which is available in the X-axis direction by the linear guide 47. Mobilely supported; and an X-axis feed drive 49 that moves the X-axis table 48 in the X-axis direction. Further, the motor 49c of the X-axis feed driving device 49 is driven to rotate the ball screw shaft 49b, whereby the X-axis table 48 is moved along the guide rail 47a of the linear guide 47 together with a ball screw nut (not shown). The substrate holding portion 20 is moved in the X-axis direction.

Z-傾斜調整機構43包括:馬達43a,其設置於X軸平台48上;滾珠螺桿軸43b,其藉由馬達43a而旋轉驅動;楔狀螺母43c,其形成為楔狀且螺合於滾珠螺桿軸43b;以及楔部43d,其以楔狀突設於基板保持部20之下表面,且卡合於楔狀螺母43c之傾斜面。而且,於本實施形態中,Z-傾斜調整機構43係於X軸平台48之X軸方向之一端側(圖9之近前側)設置2台、於另一側設置1台(圖10之裏側,參照圖11),合計設置3台,且各自獨立地被驅動控制。再者,Z-傾斜調整機構43之設置數量係任意。The Z-tilt adjustment mechanism 43 includes a motor 43a that is disposed on the X-axis stage 48, a ball screw shaft 43b that is rotationally driven by a motor 43a, and a wedge nut 43c that is formed in a wedge shape and screwed to the ball screw The shaft 43b and the wedge portion 43d are protruded from the lower surface of the substrate holding portion 20 in a wedge shape, and are engaged with the inclined surface of the wedge nut 43c. Further, in the present embodiment, the Z-tilt adjustment mechanism 43 is provided on one side of the X-axis direction of the X-axis stage 48 (the front side of FIG. 9), and one on the other side (the back side of FIG. 10). Referring to Fig. 11), three units are collectively provided, and each is independently driven and controlled. Furthermore, the number of Z-tilt adjustment mechanisms 43 is arbitrary.

而且,Z-傾斜調整機構43係藉由馬達43a使滾珠螺桿軸43b旋轉驅動,藉此楔狀螺母43c於X軸方向水平移動,且該水平移動運動藉由楔狀螺母43c及楔部43d之斜面作用而切換至高精度之上下微動運動,從而楔部43d於Z方向微動。因此,藉由使3台Z-傾斜調整機構43僅以相同之量驅動,可使基板保持部20於Z軸方向微動,又,藉由使3台Z-傾斜調整機構43獨立地驅動,可進行基板保持部20之傾斜調整。藉此,可對基板保持部20之Z軸、傾斜方向之位置進行微調整而使光罩M與基板W保持規定之間隔而平行地相向。Further, the Z-tilt adjustment mechanism 43 rotationally drives the ball screw shaft 43b by the motor 43a, whereby the wedge nut 43c is horizontally moved in the X-axis direction, and the horizontal movement movement is performed by the wedge nut 43c and the wedge portion 43d. The bevel acts to switch to the high-precision upper and lower fretting motion, so that the wedge portion 43d is slightly moved in the Z direction. Therefore, by driving the three Z-tilt adjustment mechanisms 43 by only the same amount, the substrate holding portion 20 can be slightly moved in the Z-axis direction, and the three Z-tilt adjustment mechanisms 43 can be independently driven. The tilt adjustment of the substrate holding portion 20 is performed. Thereby, the position of the Z-axis and the oblique direction of the substrate holding portion 20 can be finely adjusted, and the mask M and the substrate W can be opposed to each other at a predetermined interval in parallel.

進而,如圖10及圖11所示,於第1鄰近曝光裝置本體2中設置有檢測基板保持部20之位置的位置測定裝置即雷射測距裝置60。該雷射測距裝置60係對於驅動基板保持部移動機構40時產生之基板保持部20之移動距離進行測定者。Further, as shown in FIG. 10 and FIG. 11, the first proximity exposure apparatus main body 2 is provided with a laser distance measuring device 60 which is a position measuring device that detects the position of the substrate holding portion 20. The laser distance measuring device 60 measures the moving distance of the substrate holding portion 20 which is generated when the substrate holding portion moving mechanism 40 is driven.

雷射測距裝置60包括:X軸用鏡64,其以固定於撐桿(未圖示)而沿基板保持部20之X軸方向側面的方式配設;Y軸用鏡65,其以固定於撐桿71而沿基板保持部20之Y軸方向側面的方式配設;X軸測距器(測距器)61及偏轉測定器(測距器)62,其等配設於裝置基底50之X軸方向端部,將雷射光(測量光)照射至X軸用鏡64,並接收藉由X軸用鏡64而反射之雷射光,從而測量基板保持部20之位置;以及1台Y軸測距器(測距器)63,其配設於裝置基底50之Y軸方向端部,將雷射光照射至Y軸用鏡65,並接收藉由Y軸用鏡65而反射之雷射光,從而測量基板保持部20之位置。The laser distance measuring device 60 includes an X-axis mirror 64 that is fixed to a side surface of the substrate holding portion 20 in the X-axis direction by being fixed to a stay (not shown), and a Y-axis mirror 65 for fixing The support 71 is disposed along the side surface of the substrate holding portion 20 in the Y-axis direction; the X-axis range finder (rangometer) 61 and the deflection measuring device (rangometer) 62 are disposed on the device substrate 50. The X-axis direction end portion irradiates the X-axis mirror 64 with the laser light (measuring light), and receives the laser light reflected by the X-axis mirror 64, thereby measuring the position of the substrate holding portion 20; and 1 Y A shaft range finder (range finder) 63 is disposed at an end portion of the apparatus base 50 in the Y-axis direction, irradiates the laser light to the Y-axis mirror 65, and receives the laser light reflected by the Y-axis mirror 65. Thereby, the position of the substrate holding portion 20 is measured.

而且,雷射測距裝置60係藉由自X軸測距器61、偏轉測定器62、及Y軸測距器63照射至X軸用鏡64及Y軸用鏡65之雷射光由X軸用鏡64及Y軸用鏡65反射,而高精度地測量基板保持部20之X軸、Y軸方向之位置。又,X軸方向之位置資料係藉由X軸測距器61測定,θ方向之位置係藉由偏轉測定器62測定。再者,基板保持部20之位置係參考藉由雷射測距裝置60測定之X軸方向位置、Y軸方向位置、及θ方向之位置,並藉由加以適當修正而算出。Further, the laser ranging device 60 is irradiated to the X-axis mirror 64 and the Y-axis mirror 65 from the X-axis by the X-axis range finder 61, the deflection finder 62, and the Y-axis range finder 63. The mirror 64 and the Y-axis are reflected by the mirror 65, and the positions of the substrate holding portion 20 in the X-axis and Y-axis directions are measured with high precision. Further, the positional data in the X-axis direction is measured by the X-axis range finder 61, and the position in the θ direction is measured by the deflection measuring device 62. Further, the position of the substrate holding portion 20 is calculated by referring to the position in the X-axis direction, the position in the Y-axis direction, and the position in the θ direction measured by the laser distance measuring device 60, and is appropriately corrected.

圖13係示意性地表示第1鄰近曝光裝置本體2之工件夾盤21之吸附面之俯視圖。於工件夾盤21之吸附面22上形成有獨立之13個吸附區域,即,第1~第13吸附區域800a、...、800m。第1吸附區域800a係藉由四邊形狀之第1隔離壁810a而隔離,進而,第2~第9吸附區域800b~800i依次鄰接於第1吸附區域800a而由隔離壁810b~810i隔離,並配置成矩陣狀。與第1吸附區域800a之隔離壁810a鄰接的第2吸附區域800b之隔離壁810b係於其鄰接部為共通之壁。又,與第1吸附區域800a之隔離壁810a鄰接的第4吸附區域800d之隔離壁810d亦同樣於其鄰接部為共通之壁。又,關於其他吸附區域亦相同地設置。Fig. 13 is a plan view schematically showing an adsorption surface of the workpiece chuck 21 of the first proximity exposure apparatus main body 2. On the adsorption surface 22 of the workpiece chuck 21, 13 separate adsorption regions, that is, first to thirteenth adsorption regions 800a, ..., 800m are formed. The first adsorption region 800a is isolated by the first partition wall 810a having a quadrangular shape, and the second to ninth adsorption regions 800b to 800i are sequentially adjacent to the first adsorption region 800a and separated by the partition walls 810b to 810i, and are disposed. In a matrix. The partition wall 810b of the second adsorption region 800b adjacent to the partition wall 810a of the first adsorption region 800a is a wall in which the adjacent portions are common. Further, the partition wall 810d of the fourth adsorption region 800d adjacent to the partition wall 810a of the first adsorption region 800a is also a wall in which the adjacent portions are common. Further, the other adsorption regions are also provided in the same manner.

於第1吸附區域800a~第9吸附區域800i之周圍,第10周圍吸附區域800j~第13周圍吸附區域800m藉由隔離壁810j~810m而隔離,且形成為長方形狀。與第10周圍吸附區域800j之隔離壁810j鄰接的第7吸附區域800g之隔離壁810g、第8吸附區域800h之隔離壁810h、及第9吸附區域800i之隔離壁810i係於其鄰接部為共通之壁。對其他周圍吸附區域亦同樣地設置。再者,第10周圍吸附區域800j~第13周圍吸附區域800m係對應於長方形狀之基板W之尺寸,且根據基板W之方向而使用。Around the first adsorption region 800a to the ninth adsorption region 800i, the tenth surrounding adsorption region 800j to the thirteenth surrounding adsorption region 800m are isolated by the partition walls 810j to 810m, and are formed in a rectangular shape. The partition wall 810g of the seventh adsorption region 800g adjacent to the partition wall 810j of the tenth surrounding adsorption region 800j, the partition wall 810h of the eighth adsorption region 800h, and the partition wall 810i of the ninth adsorption region 800i are common to the adjacent portions thereof. The wall. The same applies to other surrounding adsorption areas. Further, the tenth surrounding adsorption region 800j to the thirteenth surrounding adsorption region 800m correspond to the size of the rectangular substrate W, and are used depending on the direction of the substrate W.

圖14(A)~(D)係圖13之A部、B部、C部、D部之各部分之放大圖。於各吸附區域800a、...、800m內形成有具有與各隔離壁810a、...、810m之高度等同的高度之複數個突起85,且各隔離壁810a、...、810m及突起85可抵接於基板W之背面。又,去除各隔離壁810a、...、810m及突起85之外的部分係成為各吸附區域800a、...、800g之低部86。再者,各隔離壁810a、...、810m及突起85之加工可為端銑刀等之切削,亦可為噴丸處理。14(A) to 14(D) are enlarged views of respective portions of the A portion, the B portion, the C portion, and the D portion of Fig. 13. A plurality of protrusions 85 having heights equivalent to the heights of the partition walls 810a, ..., 810m are formed in each of the adsorption regions 800a, ..., 800m, and the partition walls 810a, ..., 810m and protrusions are formed. 85 can abut on the back surface of the substrate W. Further, the portions excluding the partition walls 810a, ..., 810m and the projections 85 are the lower portions 86 of the respective adsorption regions 800a, ..., 800g. Furthermore, the processing of the partition walls 810a, ..., 810m and the protrusions 85 may be cutting of an end mill or the like, or may be shot peening.

進而,於各吸附區域800a、...、800m內之各低部86之表面上,開設有複數個正負壓孔87。而且,於吸附基板W時,自該等正負壓孔87進行真空吸引,藉此將由各吸附區域800a、...、800m之各低部86、各隔離壁810a、...、810m及周圍吸附區域800j、...、800m、及基板W之背面包圍的空間成為負壓。於卸載基板W時,為使基板W易於脫離,而對空間內進行大氣釋放或自正負壓孔87導入正壓。Further, a plurality of positive and negative pressure holes 87 are formed on the surfaces of the respective lower portions 86 in the respective adsorption regions 800a, ..., 800m. Further, when the substrate W is adsorbed, vacuum suction is performed from the positive and negative pressure holes 87, whereby the lower portions 86 of the respective adsorption regions 800a, ..., 800m, the partition walls 810a, ..., 810m, and The space surrounded by the surrounding adsorption regions 800j, ..., 800m, and the back surface of the substrate W becomes a negative pressure. When the substrate W is unloaded, in order to facilitate the detachment of the substrate W, the atmosphere is released in the space or a positive pressure is introduced from the positive and negative pressure holes 87.

圖15(B)係於圖15(A)所示之第1鄰近曝光裝置本體2之工件夾盤21的吸附面22(一點鏈線)上載置有基板W(實線)。又,圖15(B)之基板W之斜線部係表示曝光之區間Se1~Se4。於該情形時,基板W係以所謂縱置而使用,而作為吸附區域係使用第1吸附區域800a~第9吸附區域800i、第10周圍吸附區域800j、及第12周圍吸附區域800l。Fig. 15(B) shows a substrate W (solid line) placed on the adsorption surface 22 (slight chain line) of the workpiece chuck 21 of the first proximity exposure apparatus main body 2 shown in Fig. 15(A). Moreover, the oblique line portion of the substrate W of Fig. 15(B) indicates the sections Se1 to Se4 of exposure. In this case, the substrate W is used in a so-called vertical position, and the first adsorption region 800a to the ninth adsorption region 800i, the tenth surrounding adsorption region 800j, and the twelfth peripheral adsorption region 8001 are used as the adsorption region.

該等吸附區域係藉由設置於控制部70(參照圖10)之吸附控制部70a(參照圖10)而控制。吸附控制部70a係對於與曝光用光之照射區域對應之吸附區域獨立於其他吸附區域而進行控制。例如,可將對應於曝光用光照射區域之吸附區域控制成非吸附,又,亦可對於與曝光用光照射區域對應的吸附區域較其他吸附區域進一步進行減壓控制。These adsorption zones are controlled by the adsorption control unit 70a (see FIG. 10) provided in the control unit 70 (see FIG. 10). The adsorption control unit 70a controls the adsorption region corresponding to the irradiation region of the exposure light independently of the other adsorption regions. For example, the adsorption region corresponding to the exposure light irradiation region can be controlled to be non-adsorbed, and the adsorption region corresponding to the exposure light irradiation region can be further subjected to pressure reduction control than the other adsorption regions.

關於對基板W之區間Se1~Se4進行曝光時的基板W之吸附控制,利用圖16(A)~(D)進行說明。The adsorption control of the substrate W when the sections Se1 to Se4 of the substrate W are exposed will be described with reference to FIGS. 16(A) to 16(D).

首先,如圖16(A)所示,曝光用光照射至區間Se1,藉此,區間Se1曝光,但此時區間Se1正下方(曝光用光照射區域)之第1吸附區域800a、第2吸附區域800b、第4吸附區域800d、及第5吸附區域800e被控制成非吸附狀態。相反,表示區間Se1以外(曝光用光照射區域)之L字線部Q1之第3吸附區域800c、第6吸附區域800f、第7吸附區域800g、第8吸附區域800h、及第9吸附區域800i被控制成吸附狀態。於該情形時,第10周圍吸附區域800j及第12周圍吸附區域800l可進行吸附且亦可不進行吸附。如上所述,因不進行曝光用光照射區域正下方之吸附區域之吸附,可避免因吸附引起之基板之變形。First, as shown in FIG. 16(A), the exposure light is irradiated to the section Se1, whereby the section Se1 is exposed, but the first adsorption zone 800a and the second adsorption immediately below the section Se1 (exposure light irradiation zone) are formed. The region 800b, the fourth adsorption region 800d, and the fifth adsorption region 800e are controlled to be in a non-adsorbed state. On the other hand, the third adsorption region 800c, the sixth adsorption region 800f, the seventh adsorption region 800g, the eighth adsorption region 800h, and the ninth adsorption region 800i of the L-line portion Q1 other than the interval Se1 (exposure light irradiation region) are shown. Controlled to an adsorption state. In this case, the 10th surrounding adsorption zone 800j and the 12th surrounding adsorption zone 800l may or may not be adsorbed. As described above, since the adsorption of the adsorption region directly under the irradiation light irradiation region is not performed, the deformation of the substrate due to the adsorption can be avoided.

其次,藉由基板保持部移動機構40使基板保持部20於X軸方向步進移動,且如圖16(B)所示,曝光用光照射至區間Se2,藉此,區間Se2曝光,但此時區間Se2正下方(曝光用光照射區域)之第3吸附區域800c、第2吸附區域800b、第6吸附區域800f、及第5吸附區域800e被控制成非吸附狀態。相反,表示區間Se2以外(曝光用光照射區域)之L字線部Q2之第1吸附區域800a、第4吸附區域800d、第7吸附區域800g、第8吸附區域800h、及第9吸附區域800i被控制成吸附狀態。Then, the substrate holding portion 20 is stepwise moved in the X-axis direction by the substrate holding portion moving mechanism 40, and as shown in FIG. 16(B), the exposure light is irradiated to the interval Se2, whereby the interval Se2 is exposed, but this is The third adsorption region 800c, the second adsorption region 800b, the sixth adsorption region 800f, and the fifth adsorption region 800e directly below the time interval Se2 (exposure light irradiation region) are controlled to be in a non-adsorption state. On the other hand, the first adsorption region 800a, the fourth adsorption region 800d, the seventh adsorption region 800g, the eighth adsorption region 800h, and the ninth adsorption region 800i of the L-line portion Q2 other than the interval Se2 (exposure light irradiation region) are shown. Controlled to an adsorption state.

再者,該吸附區域之切換係於區間Se1之曝光結束後且在向區間Se2之步進移動前進行。藉由此種方式,可防止於步進時基板W產生偏移。Further, the switching of the adsorption region is performed after the end of the exposure of the section Se1 and before the stepwise movement to the section Se2. In this way, it is possible to prevent the substrate W from being shifted during stepping.

其次,藉由基板保持部移動機構40使基板保持部20於Y軸方向步進移動,且如圖16(C)所示,曝光用光照射至區間Se3,藉此,區間Se3曝光,但此時區間Se3正下方(曝光用光照射區域)之第9吸附區域800i、第8吸附區域800h、第6吸附區域800f、及第5吸附區域800e被控制成非吸附狀態。相反,表示區間Se3以外(曝光用光照射區域)之L字線部Q3之第7吸附區域800g、第4吸附區域800d、第1吸附區域800a、第2吸附區域800b、及第12吸附區域8001被控制成吸附狀態。Then, the substrate holding portion 20 is stepwise moved in the Y-axis direction by the substrate holding portion moving mechanism 40, and as shown in FIG. 16(C), the exposure light is irradiated to the interval Se3, whereby the interval Se3 is exposed, but this is The ninth adsorption region 800i, the eighth adsorption region 800h, the sixth adsorption region 800f, and the fifth adsorption region 800e immediately below the time interval Se3 (exposure light irradiation region) are controlled to be in a non-adsorption state. On the other hand, the seventh adsorption region 800g, the fourth adsorption region 800d, the first adsorption region 800a, the second adsorption region 800b, and the twelfth adsorption region 8001 of the L-line portion Q3 other than the interval Se3 (exposure light irradiation region) are shown. Controlled to an adsorption state.

其次,藉由基板保持部移動機構40使基板保持部20於X軸方向步進移動,且如圖16(D)所示,曝光用光照射至區間Se4,藉此,區間Se4曝光,但此時區間Se4正下方(曝光用光照射區域)之第7吸附區域800g、第8吸附區域800h、第4吸附區域800d、及第5吸附區域800e被控制成非吸附狀態。對此,表示區間Se4以外(曝光用光照射區域)之L字線部Q4之第1吸附區域800a、第2吸附區域800b、第3吸附區域800c、第6吸附區域800f、及第9吸附區域800i被控制成吸附狀態。Then, the substrate holding portion 20 is stepwise moved in the X-axis direction by the substrate holding portion moving mechanism 40, and as shown in FIG. 16(D), the exposure light is irradiated to the section Se4, whereby the section Se4 is exposed. The seventh adsorption region 800g, the eighth adsorption region 800h, the fourth adsorption region 800d, and the fifth adsorption region 800e immediately below the time interval Se4 (exposure light irradiation region) are controlled to be in a non-adsorption state. On the other hand, the first adsorption region 800a, the second adsorption region 800b, the third adsorption region 800c, the sixth adsorption region 800f, and the ninth adsorption region of the L-line portion Q4 other than the interval Se4 (exposure light irradiation region) are shown. The 800i is controlled to the adsorption state.

又,於上述實施形態中,在步進前已切換吸附區域,但亦可於步進時切換吸附區域。其原因在於,於步進時,只要存在一直處於吸附狀態之吸附區域即可,進而,只要吸附曝光光照射區域以外之任一吸附區域則足夠。Further, in the above embodiment, the adsorption region has been switched before the stepping, but the adsorption region may be switched during the stepping. The reason for this is that it is sufficient to have an adsorption region that is always in an adsorption state during the stepping, and further, it is sufficient to adsorb any of the adsorption regions other than the exposure light irradiation region.

例如,於自區間Se1向區間Se2之步進時,第7吸附區域800g、第8吸附區域800h、及第9吸附區域800i係一直處於吸附狀態,故而成為自第3吸附區域800c、第6吸附區域800f向第1吸附區域800a、第4吸附區域800d切換吸附控制。For example, when stepping from the interval Se1 to the interval Se2, the seventh adsorption region 800g, the eighth adsorption region 800h, and the ninth adsorption region 800i are always in an adsorption state, so that the third adsorption region 800c and the sixth adsorption region are obtained. The region 800f switches the adsorption control to the first adsorption region 800a and the fourth adsorption region 800d.

進而,圖17(A)及17(B)係對一個基板W曝光4個區間(所謂附帶4個面),但並不限定於此,可適用於所有附帶面之情形。例如,圖16(A)係將附帶6個面之基板W(橫向上較長之基板)橫置者,且曝光時之吸附係與上述實施形態相同地進行。於該情形時,使用第11周圍吸附區域800k及第13周圍吸附區域800m。又,圖17(B)係將附帶6個面之基板W(縱向上較長之基板)縱置者,且曝光時之吸附係與上述實施形態相同地進行。於該情形時,使用第10周圍吸附區域800j及第12周圍吸附區域800l。Further, in FIGS. 17(A) and 17(B), one substrate W is exposed to four sections (so-called four faces), but the present invention is not limited thereto, and can be applied to all incidental surfaces. For example, Fig. 16(A) is a case where the substrate W (the substrate which is long in the lateral direction) with six faces is placed horizontally, and the adsorption system at the time of exposure is performed in the same manner as in the above embodiment. In this case, the eleventh surrounding adsorption region 800k and the thirteenth surrounding adsorption region 800m are used. Further, Fig. 17(B) shows that the substrate W (the substrate having a long length in the longitudinal direction) with six faces is placed vertically, and the adsorption system at the time of exposure is performed in the same manner as in the above embodiment. In this case, the tenth surrounding adsorption region 800j and the twelfth surrounding adsorption region 800l are used.

再者,於吸附面22形成有複數個銷孔(未圖示),該等銷孔係於藉由工件承載器(未圖示)將基板W搬送至工件夾盤21時使自吸附面22進出之複數個銷(未圖示)可進退。Further, a plurality of pin holes (not shown) are formed in the adsorption surface 22, and the pin holes are formed on the self-adsorption surface 22 when the substrate W is transported to the workpiece chuck 21 by a workpiece carrier (not shown). A plurality of pins (not shown) that enter and exit can advance and retreat.

若使用如上所述構成之第1~第4鄰近曝光裝置本體2、...、5向基板W進行第1~第4層之曝光轉印,則於隔離壁之位置,因溫度變化之影響而使基板產生少許變形,但無因吸附基板而引起的基板之變形,故而不存在於基板W上被目測確認為曝光不均之情形,而且,可抑制曝光分佈之偏差之產生。再者,本發明並不限定於上述各實施形態,可於不脫離本發明之要旨之範圍內適當變更。When the first to fourth adjacent exposure apparatus bodies 2, ..., 5 configured as described above are subjected to the exposure transfer of the first to fourth layers to the substrate W, the position of the partition wall is affected by the temperature change. Further, the substrate is slightly deformed, but there is no deformation of the substrate due to the adsorption of the substrate. Therefore, it is not visually recognized as uneven exposure on the substrate W, and variation in exposure distribution can be suppressed. It is to be noted that the present invention is not limited to the above-described embodiments, and may be appropriately modified without departing from the spirit and scope of the invention.

於上述實施形態中,第1~第9吸附區域800a~800i之隔離壁810a~810i係以非直線之波浪形狀而形成,且周圍吸附區域800j、...、800m之周圍隔離壁810j、...、810m係藉由直線形狀之連續部分而形成,但第1~第9吸附區域800a~800i之隔離壁810a~810i亦可曲直線形成,且周圍吸附區域800j、...、800m之周圍隔離壁810j、~、810m亦可藉由非直線即波浪形狀之連續部分形成。又,突起係分別藉由圓形狀而形成,但亦可設為正方形狀,可使用多種形狀。In the above embodiment, the partition walls 810a to 810i of the first to ninth adsorption regions 800a to 800i are formed in a non-linear wave shape, and the surrounding partition walls 810j, around the surrounding adsorption regions 800j, ..., 800m. . . . , 810m is formed by a continuous portion of a straight line shape, but the partition walls 810a to 810i of the first to ninth adsorption regions 800a to 800i may also be formed in a straight line, and the surrounding adsorption regions 800j, ..., 800m The surrounding partition walls 810j, ~, 810m may also be formed by a continuous portion that is not a straight line, that is, a wave shape. Further, the protrusions are each formed by a circular shape, but may be formed in a square shape, and a variety of shapes can be used.

本案係基於2009年11月25日申請之日本專利申請(日本專利特願2009-267918號)、及2010年1月28日申請之日本專利申請(日本專利特願2010-016087號)者,其內容以參考之形式併入本文中。The present application is based on a Japanese patent application filed on November 25, 2009 (Japanese Patent Application No. 2009-267918), and Japanese Patent Application No. 2010-016087, filed on Jan. The content is incorporated herein by reference.

1...曝光單元1. . . Exposure unit

2...第1鄰近曝光裝置本體2. . . First proximity exposure device body

3...第2鄰近曝光裝置本體3. . . Second proximity exposure device body

4...第3鄰近曝光裝置本體4. . . Third proximity exposure device body

5...第4鄰近曝光裝置本體5. . . 4th proximity exposure device body

10...光罩保持部10. . . Mask holder

11...光罩保持部基底11. . . Photomask holder base

11a...開口部11a. . . Opening

12...光罩保持框12. . . Mask retaining frame

12b...開口12b. . . Opening

14...夾盤部14. . . Chuck section

16...光罩位置調整機構16. . . Mask position adjustment mechanism

16x...X軸方向驅動裝置16x. . . X-axis direction drive

16y...Y軸方向驅動裝置16y. . . Y-axis direction drive

17...間隙感測器17. . . Gap sensor

18...光罩用對準排列相機18. . . Photomask with alignment camera

19...移動機構19. . . Mobile agency

20...基板保持部20. . . Substrate holding unit

21...工件夾盤twenty one. . . Workpiece chuck

22...吸附面twenty two. . . Adsorption surface

30...照明光學系統30. . . Lighting optical system

31...高壓水銀燈31. . . High pressure mercury lamp

32...凹面鏡32. . . concave mirror

33...光學積分器33. . . Optical integrator

34...曝光控制用快門34. . . Exposure control shutter

35、36...平面鏡35, 36. . . Plane mirror

37...球面鏡37. . . Spherical mirror

38...遮蔽孔徑38. . . Shadow aperture

39...遮蔽孔徑驅動機構39. . . Shielding aperture drive mechanism

40...基板保持部移動機構40. . . Substrate holding portion moving mechanism

41...Y軸進給機構41. . . Y-axis feed mechanism

42...X軸進給機構42. . . X-axis feed mechanism

43...Z-傾斜調整機構43. . . Z-tilt adjustment mechanism

43a、46c、49c...馬達43a, 46c, 49c. . . motor

43b、46b、49b...滾珠螺桿軸43b, 46b, 49b. . . Ball screw shaft

43c...楔狀螺母43c. . . Wedge nut

43d...楔部43d. . . Wedge

44、47...線性導軌44, 47. . . Linear guide

44a、47a...導向軌道44a, 47a. . . Guide track

45...Y軸平台45. . . Y-axis platform

46...Y軸進給驅動裝置46. . . Y-axis feed drive

46a...滾珠螺桿螺母46a. . . Ball screw nut

48...X軸平台48. . . X-axis platform

49...X軸進給驅動裝置49. . . X-axis feed drive

50...裝置基底50. . . Device base

51...支柱51. . . pillar

52...Z軸移動裝置52. . . Z-axis mobile device

60...雷射測距裝置60. . . Laser distance measuring device

61...X軸測距器61. . . X-axis range finder

62...偏轉測定器62. . . Deflection tester

63...Y軸測距器63. . . Y-axis range finder

64...X軸用鏡64. . . X-axis mirror

65...Y軸用鏡65. . . Y-axis mirror

70...控制部70. . . Control department

70a...吸附控制部70a. . . Adsorption control unit

71...撐桿71. . . Pole

80a...第1吸附區域80a. . . First adsorption zone

80b...第2吸附區域80b. . . Second adsorption zone

80c...第3吸附區域80c. . . Third adsorption zone

80d...第4吸附區域80d. . . 4th adsorption zone

80e...第5吸附區域80e. . . Fifth adsorption zone

80f...第6吸附區域80f. . . 6th adsorption zone

80g...第7吸附區域80g. . . 7th adsorption zone

81a、81b、81c、81d...第1隔離壁81a, 81b, 81c, 81d. . . First partition

82a、82b、82c、82d...第2隔離壁82a, 82b, 82c, 82d. . . Second partition

83a、83b、83c、83d...第3隔離壁83a, 83b, 83c, 83d. . . Third partition wall

84a、84b、84c、84d...周緣壁84a, 84b, 84c, 84d. . . Peripheral wall

85、90g、90i、91...突起85, 90g, 90i, 91. . . Protrusion

86...低部86. . . Lower part

87、87a、87b、87c、87d、87e、87f、87g...正負壓孔87, 87a, 87b, 87c, 87d, 87e, 87f, 87g. . . Positive and negative pressure hole

90...離壁90. . . Off the wall

90a...續部分90a. . . Continued section

90b...伸部分90b. . . Stretching part

90c、90d、90e...長方形部分90c, 90d, 90e. . . Rectangular part

90f...波浪線部分90f. . . Wavy line section

800a...第1吸附區域800a. . . First adsorption zone

800b...第2吸附區域800b. . . Second adsorption zone

800c...第3吸附區域800c. . . Third adsorption zone

800d...第4吸附區域800d. . . 4th adsorption zone

800e...第5吸附區域800e. . . Fifth adsorption zone

800f...第6吸附區域800f. . . 6th adsorption zone

800g...第7吸附區域800g. . . 7th adsorption zone

800h...第8吸附區域800h. . . 8th adsorption zone

800i...第9吸附區域800i. . . Ninth adsorption zone

800j...第10吸附區域800j. . . 10th adsorption zone

800k...第11吸附區域800k. . . 11th adsorption zone

800l...第12吸附區域800l. . . 12th adsorption zone

800m...第13吸附區域800m. . . 13th adsorption zone

810a...第1隔離壁810a. . . First partition

810b...第2隔離壁810b. . . Second partition

810c...第3隔離壁810c. . . Third partition wall

810d...第4隔離壁810d. . . 4th partition wall

810e...第5隔離壁810e. . . Fifth partition wall

810f...第6隔離壁810f. . . 6th partition wall

810g...第7隔離壁810g. . . 7th partition wall

810h...第8隔離壁810h. . . 8th partition wall

810i...第9隔離壁810i. . . 9th partition wall

810j...第10周圍隔離壁810j. . . 10th surrounding wall

810k...第11周圍隔離壁810k. . . 11th surrounding wall

810l...第12周圍隔離壁810l. . . 12th surrounding wall

810m...第13周圍隔離壁810m. . . 13th surrounding wall

L...光路L. . . Light path

M...光罩M. . . Mask

Q1、Q2、Q3、Q4...L字線部Q1, Q2, Q3, Q4. . . L word line

Se1、Se2、Se3、Se4...區間Se1, Se2, Se3, Se4. . . Interval

V、VIa、VIb、VIc、VId...部分V, VIa, VIb, VIc, VId. . . section

W...玻璃基板(被曝光材)W. . . Glass substrate (exposed material)

X、Y、Z...方向X, Y, Z. . . direction

圖1係表示本發明之第1實施例之曝光單元之模式圖;1 is a schematic view showing an exposure unit of a first embodiment of the present invention;

圖2係用以說明應用於圖1之曝光單元之鄰近曝光裝置本體之局部分解立體圖;Figure 2 is a partially exploded perspective view showing the proximity exposure device body applied to the exposure unit of Figure 1;

圖3係圖2所示之鄰近曝光裝置本體之正面圖;Figure 3 is a front elevational view of the body of the proximity exposure device shown in Figure 2;

圖4係圖2所示之光罩保持部之放大立體圖;Figure 4 is an enlarged perspective view of the reticle holding portion shown in Figure 2;

圖5(a)係圖1所示之基板保持部之正面圖,(b)係(a)之V部放大圖;Figure 5 (a) is a front view of the substrate holding portion shown in Figure 1, and (b) is an enlarged view of a portion V of (a);

圖6係將圖7之各鄰近曝光裝置本體之基板保持部之VIa~VId部重疊而表示之放大圖;6 is an enlarged view showing a portion VIa to VId of the substrate holding portion of each of the adjacent exposure device bodies of FIG. 7;

圖7(a)~(h)係表示突起及隔離壁之各種變形例之圖;7(a) to 7(h) are views showing various modifications of the projections and the partition walls;

圖8(a)~(i)係表示隔離壁之各種變形例之圖;8(a) to (i) are views showing various modifications of the partition wall;

圖9係表示本發明之第2實施例之曝光單元之模式圖;Figure 9 is a schematic view showing an exposure unit of a second embodiment of the present invention;

圖10係用以說明應用於圖9之曝光單元之鄰近曝光裝置之局部分解立體圖;Figure 10 is a partially exploded perspective view showing the proximity exposure device applied to the exposure unit of Figure 9;

圖11係圖10所示之鄰近曝光裝置之正面圖;Figure 11 is a front elevational view of the proximity exposure device shown in Figure 10;

圖12係圖10所示之光罩保持部之放大立體圖;Figure 12 is an enlarged perspective view of the reticle holding portion shown in Figure 10;

圖13係圖9所示之基板保持部之正面圖;Figure 13 is a front elevational view of the substrate holding portion shown in Figure 9;

圖14(A)係圖13之A部放大圖,(B)係圖13之B部放大圖,(C)係圖13之C部放大圖,(D)係圖13之D部放大圖;14(A) is an enlarged view of a portion A of FIG. 13, (B) is an enlarged view of a portion B of FIG. 13, (C) is an enlarged view of a portion C of FIG. 13, and (D) is an enlarged view of a portion D of FIG. 13;

圖15(A)~(B)係於圖9所示之基板保持部之正面圖中配置有基板之圖;15(A) to 15(B) are views showing a substrate in a front view of the substrate holding portion shown in FIG. 9;

圖16(A)~(D)係表示基板已進行步進移動時的基板之吸附狀態之圖;及16(A) to (D) are diagrams showing the state of adsorption of the substrate when the substrate has been stepped; and

圖17(A)~(B)係表示於圖9所示之基板保持部之正面圖中配置有種類不同的基板之狀態之圖。17(A) to 17(B) are views showing a state in which substrates of different types are arranged in the front view of the substrate holding portion shown in Fig. 9.

82a、82b、82c、82d...第2隔離壁82a, 82b, 82c, 82d. . . Second partition

83a、83b、83c、83d...第3隔離壁83a, 83b, 83c, 83d. . . Third partition wall

Claims (6)

一種曝光單元,其特徵在於,其係將複數個光罩之圖案依次曝光轉印至基板者,且上述曝光單元包括藉由照射曝光用光而將光罩之圖案曝光轉印至上述基板上之複數個曝光裝置本體,該等複數個曝光裝置本體包括:光罩保持部,其保持具有上述圖案之上述光罩;基板保持部,其具有吸附並保持上述基板之吸附面;及照射部,其照射上述曝光用光;於上述基板保持部之吸附面上設置:用於將相鄰之吸附區域隔離而形成且可抵接於上述基板之背面之隔離壁,及於上述各吸附區域中可抵接於上述基板之背面之複數個突起,上述複數個曝光裝置本體之各基板保持部之吸附面具有大致相同之外形尺寸,並且,上述各基板保持部之隔離壁形成於依每個上述曝光裝置本體而不同之位置;上述複數個突起之高度與上述隔離壁之高度相等;上述基板係被保持於大氣中。 An exposure unit, characterized in that a pattern of a plurality of reticle is sequentially exposed and transferred to a substrate, and the exposure unit includes exposing a pattern of the reticle to the substrate by irradiating the exposure light. a plurality of exposure apparatus bodies, the plurality of exposure apparatus bodies including: a mask holding portion that holds the photomask having the pattern; a substrate holding portion having an adsorption surface that adsorbs and holds the substrate; and an irradiation portion Irradiating the exposure light; providing a separation wall formed by isolating adjacent adsorption regions and abutting against a back surface of the substrate on the adsorption surface of the substrate holding portion, and being capable of abutting in each of the adsorption regions a plurality of protrusions connected to the back surface of the substrate, the adsorption surfaces of the substrate holding portions of the plurality of exposure device bodies have substantially the same outer dimensions, and the partition walls of the substrate holding portions are formed in each of the exposure devices a position different from the body; the height of the plurality of protrusions is equal to the height of the partition wall; the substrate is held in the atmosphere 如請求項1之曝光單元,其中於上述基板保持部之吸附面上,設置有控制使上述各吸附區域成為吸附或非吸附之吸附控制部,且上述吸附控制部對於與上述曝光用光之照射區域對應之吸附區域獨立於其他吸附區域而進行控制。 The exposure unit according to claim 1, wherein the adsorption surface of the substrate holding portion is provided with an adsorption control unit that controls adsorption or non-adsorption of each of the adsorption regions, and the adsorption control unit irradiates the exposure light. The adsorption zone corresponding to the zone is controlled independently of the other adsorption zones. 如請求項2之曝光單元,其中 上述吸附控制部係以使對應於上述照射區域之上述吸附區域成為非吸附之方式進行控制。 The exposure unit of claim 2, wherein The adsorption control unit controls the adsorption region corresponding to the irradiation region to be non-adsorbed. 如請求項2之曝光單元,其中上述吸附控制部係控制使對應於上述曝光用光之照射區域之吸附區域較其他吸附區域為減壓。 The exposure unit of claim 2, wherein the adsorption control unit controls the adsorption region corresponding to the irradiation region of the exposure light to be decompressed from the other adsorption regions. 一種曝光方法,其特徵在於:其係使用複數個曝光裝置本體將各光罩之圖案依次曝光於基板的基板之曝光方法,該等複數個曝光裝置本體包括保持具有圖案之上述光罩之光罩保持部、具有吸附且保持上述基板之吸附面之基板保持部、及照射曝光用光之照射部,且藉由照射上述曝光用光而將上述光罩之圖案曝光轉印至上述基板上,且上述曝光方法包括如下步驟:以使將上述吸附面之相鄰之吸附區域隔離的隔離壁於依每個上述曝光裝置本體而不同之位置與上述基板之背面抵接之方式,藉由上述複數個曝光裝置本體依次曝光上述基板;其中於各吸附區域內,形成有複數之突起,該等複數之突起之高度與上述隔離壁之高度相等;上述基板係被保持於大氣中。 An exposure method, characterized in that it is a method for exposing a pattern of each mask to a substrate of a substrate by using a plurality of exposure device bodies, the plurality of exposure device bodies comprising a mask for holding the mask of the pattern a holding portion, a substrate holding portion that adsorbs and holds the adsorption surface of the substrate, and an irradiation portion that irradiates the exposure light, and irradiates the pattern of the mask onto the substrate by irradiating the exposure light, and The exposure method includes the steps of: abutting a partition wall that separates adjacent adsorption regions of the adsorption surface from a back surface of the substrate at a position different from each of the exposure device bodies by the plurality of The exposure apparatus body sequentially exposes the substrate; wherein a plurality of protrusions are formed in each of the adsorption regions, and the heights of the plurality of protrusions are equal to the height of the partition wall; and the substrate is held in the atmosphere. 如請求項5之曝光方法,其中與上述曝光用光之照射區域對應的吸附區域係獨立於其他吸附區域而予以控制。The exposure method of claim 5, wherein the adsorption region corresponding to the irradiation region of the exposure light is controlled independently of the other adsorption regions.
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