TW201126280A - Exposure unit and method for exposing substrate - Google Patents

Exposure unit and method for exposing substrate Download PDF

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Publication number
TW201126280A
TW201126280A TW099140850A TW99140850A TW201126280A TW 201126280 A TW201126280 A TW 201126280A TW 099140850 A TW099140850 A TW 099140850A TW 99140850 A TW99140850 A TW 99140850A TW 201126280 A TW201126280 A TW 201126280A
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Taiwan
Prior art keywords
adsorption
substrate
exposure
holding portion
axis
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TW099140850A
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Chinese (zh)
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TWI468875B (en
Inventor
Hiroshi Ikebuchi
Satoru Togawa
Shinichiro Nagai
Yasutaka Kiriu
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Nsk Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

Each of the suction surfaces (22) of work chucks (21) has: partitioning walls (81a-81d, 82a-82d, 83a-83d), which are formed so as to partition adjacent suction regions (80a-80g), and which can abut on the rear surface of a substrate (W); and a plurality of protruding sections (85), which can abut on the rear surface of the substrate (W) in the suction regions (80a-80g), respectively. The suction surfaces (22) of the work chucks (21) of a plurality of exposure apparatus main bodies (2-5) have substantially the same outer dimension, and the partitioning walls (81a-81d, 82a-82d, 83a-83d) of the work chucks (21) are formed at positions that differ by each of the exposure apparatus main bodies (2-5).

Description

201126280 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種包括複數個曝光裝置本體之曝光單元 及基板之曝光方法。 【先前技術】 先前，提出多種製造液晶顯示裝置或電漿顯示裝置等平 板顯示裝置之彩色濾光片基板或TFT(Thin Film Transistor， 薄膜電晶體）基板之曝光裝置。曝光裝置係藉由光罩保持部 而保持光罩並且藉由基板保持部保持基板，且將兩者鄰近 地相向配置。而且，藉由自光罩側照射圖案曝光用之光， 將光罩上所描繪之光罩圖案曝光轉印至基板。又，例如於 製造彩色濾光片基板之情形時，使用4個曝光裝置本體，依 次將BM(black Matrix，黑矩陣）層、R(紅）、G(綠）、B(藍） 該3個著色層曝光於基板。 於專利文獻1、2所記載之曝光裝置令，基板保持部中， 於吸附且保持基板之吸附面上具有複數個突起（壓紋），並且 具有以形成複數個吸附區域之方式將相鄰之吸附區域隔離 之隔離壁。而_£，將規定方向±之突起與隔離壁之間隔、 及相鄰之突起間之間隔設定成規定之寬度，藉此使基板之 換曲量大致相等，並使基板之平面度提高，從而抑制曝光 不均。又，專利文獻3所記載之基板保持部十包括包圍吸引 空間之周緣部、設置於吸引空間内之複數個突起、及自周 緣部向突起延伸之支持部，且以較佳之平坦度保持基板。 [先前技術文獻] 152499.doc 201126280 [專.利文獻] [專利文獻 1] JP-A-2009-212344 [專利文獻 2] JP-A-2009-198641 [專利文獻 3] W02006/025341 號 【發明内容】 [發明所欲解決之問題] 然而，於基板保持部之内部，為了使基板冷卻而流通有 冷卻媒體，且於基板保持部吸附保持基板時，在複數個突 起或隔離壁接觸之部分及未接觸之部分，基板上產生溫度 變化。特別是於與連續之隔離壁接觸之基板之部分，存在 與未接觸之部分之溫度變化變大，且於與隔離壁接觸之基 板附近產生少許變形之可能性。因此，於使用複數個曝光 裝置本體進行複數次曝光時，若隔離壁接觸之部分之位置 於各曝錢置本體上-致，則存在於已進行複數次曝光之 產品之相應位置產生曝光不均或曝光分佈之偏差之問題。 再者，於專利文獻中所記载之基板保持部中，對上述問 題未進行任何考慮。 本發明係鑒於上述課題而完成者 -，，的隹於提供一$ 即便為已完成複數次曝光之產品亦可抑制因隔離壁而弓" 均或曝光分佈之偏差的產生之曝光單元及基板々 I解決問題之技術手段] 根據本發明之實施形態，本 上s 月之曝先早兀係將複數 上迩各先罩之圖案依次曝光轉 付I主上述基板者，且上述 152499.doc 201126280 光單元包括複數個曝光裝置本體，該等複數個曝光裝置本 體包括：保持具有上述圖案之光罩之光罩保持部、包含吸 附並保持上述基板之吸附面之基板保持部、及照射曝光用 光之照射部’且該等複數個曝光裝置本體藉由照射上述曝 光用光而將上述光罩之圖案曝光轉印至上述基板上；於上 述基板保持部之吸附面上設置用於將相鄰之吸附區域隔離 而形成且可抵接於上述基板之背面之隔離壁、及於上述各 吸附區域内可抵接於上述基板之背面之複數個突起，上述 複數個曝光裝置本體之各基板保持部之吸附面具有大致相 同之外形尺寸，並且上述各基板保持部之隔離壁於每個上 述曝光裝置本體中形成於不同之位置。 根據本發明之實施形態，本發明之曝光方法係使用複數 個曝光裝置本體將上述各光罩之圖案依次曝光於上述基板 者，該等複數個曝光裝置本體包括保持具有圖案之光罩之 光罩保持部、具有吸附且保持基板之吸附面之基板保持 部、及照射曝光用光之照射部，且藉由照射上述曝光用光 而將上述光罩之圖案曝光轉印至上述基板上’且，上述曝 光方法包括如下步驟：以使將上述吸附面之相鄰之吸附區 域隔離之隔離壁於每個上述曝光裴置本體中之不同位置上 與上述基板之背面抵接之方式，藉由上述複數個曝光裝置 本體依次曝光上述基板。 [發明之效果] 根據本發明之曝光單元，形成於複數個曝光裝置本體之 各吸附面的隔離壁係形成於每個曝光裝置本體中之不同之 152499.doc 201126280 位置，故而即便為已完成複數次曝光之產品亦可抑制因隔 離壁而引起之曝光不均或曝光分佈之偏差的產生。 又，根據本發明之基板之曝光方法，由於基板係各隔離 壁於每個曝光裝置本體中之不同的位置與基板之背面抵 接’且藉由複數個曝光裝置本體依次曝光，故而即便為已 完成複數次曝光之產品亦可抑制產生因隔離壁而引起之曝 光不均或曝光分佈之偏差的產生。 【實施方式】 [第1實施例] 以下，根據圖式對本發明之第丨實施例之曝光單元及基板 之曝光方法進行詳細說明。 如圖1所示，本發明之曝光單元i包括：第1鄰近曝光裝置 本體2，其對第1層進行曝光；第2鄰近曝光裝置本體3，其 對第2層進行曝光；第3鄰近曝光裝置本體4，其對第3層進 行曝光；以及第4鄰近曝光裝置本體5，其對第4層進行曝 光。再者，使用於塗佈機、預對準、顯影等前處理及後處 理步驟中之裝置、及搬送基板之搬送裝置等均省略圖示。 又’第1〜第4鄰近曝光裝置本體2、3、4、5只要為下述之基 板保持部之吸附面為不同之構成即可，故而以下僅對第丄 鄰近曝光裝置本體2進行詳述。 如圖2所示，第1鄰近曝光裝置本體2包括：光罩保持部 W，其保持光罩Μ ;基板保持部2〇，其保持玻璃基板（被曝 光材;照明光學系統30 ’其作為圖案曝光用之照射機構； 基板保持部移動機構40 ’其使基板保持部2〇於X軸、γ軸、 152499.doc -6 - 201126280 z軸方向移動，且進行基板保持部20之傾斜調整；以及裝置 基底50 ’其支持光罩保持部10及基板保持部移動機構40。 再者’玻璃基板W(以下，簡稱為「基板W」）係與光罩Μ 相向配置，且為了對描繪在該光罩Μ之光罩圖案進行曝光 轉印’而於表面（光罩Μ之相向面側）塗佈有光敏劑《又，光 罩Μ包含熔融石英，且形成為長方形狀。 為了便於說明而自照明光學系統3 0開始進行說明，照明 光學系統30包括：例如高壓水銀燈3丨，其係紫外線照射用 光源；凹面鏡32，其對自該高壓水銀燈3丨照射之光進行聚 光；兩種光學積分器33，其等可切換自如地配置於該凹面 鏡32之焦點附近；平面鏡35、36及球面鏡37，其等用以改 變光路之方向；以及曝光控制用快門34，其配置於該平面 鏡36與光學積分器33之間，且對照射光路進行開閉控制。 而且，於照明光學系統3〇中，若在曝光時曝光控制用快 門34受到打開控制，則自高壓水銀燈31照射之光經過圖之 所示之光路L而垂直照射至光罩Μ及基板w之表面，從而作 為圖案曝光用之平行光來使用。藉此，光罩Μ之光罩圖案 曝光轉印至基板W上。 如圖2〜圖4所示，光罩保持部1〇包括：光罩保持部基底 u，其於中央部形成有矩形形狀之開口部lla :光罩保持框 12 ’其可於X軸、γ軸、θ方向移動地安裝於光罩保持部基 底11之開口部11a ;夾盤部14，其安裝於光罩保持框12上， 並吸附保持光罩Μ ;以及光罩位置調整機構16，其使光罩 保持框Π及Α盤部於X軸、Υ轴、0方向移動，並調整保持 152499.doc 201126280 於該光罩保持框12上之光罩Μ之位置。 光罩保持部基底11係藉由立設於裝置基底5 〇上之支柱 及。又置於支柱51之上端部之ζ軸移動裝置52而可於乙軸 方向移動地得到支持，且配置於基板保持部2〇之上方。ζ 轴移動裝置52係例如包括包含馬達及滾珠螺桿等之電動致 動器、或空壓氣紅等，且進行單純之上下動作，藉此使光 罩保持部ίο升降至規定之位置。再者，ζ軸移動裝置52係於 光罩Μ之更換、或工件夾盤21之清掃等時使用。 光罩位置調整機構16包括··丨台γ軸方向驅動裝置i6y，其 安裝於沿光罩保持框12之乂軸方向之一邊；以及2台又軸方 向驅動裝置1 6x ’其等安裝於沿光罩保持框！ 2之γ轴方向之 一邊。 而且，光罩位置調整機構㈣，藉由使βγ轴方向驅動 裝置16y驅動而使光罩保持框12於丫軸方向移動，藉由相同 使2 σ X軸方向驅動裝置丨6χ驅動而使光罩保持框η於X 軸方向移動。又’藉由驅動2台χ抽方向驅動裝置^ &中之任 一者而使光罩保持框12於θ方向移動（圍繞2軸之旋轉）。 進而如圖4所示，於光罩保持部基底1丨之上表面設置有 測疋光罩Μ與基板评之相向面間的間隙之間隙感測器η、及 用以確⑽保持於夾盤部j 4的光罩河之安袭位置之光罩用對 準排列相機18。該等間隙感測器17及光罩用對準排列相機 18係經由移動機構19而可於χ軸、γ軸方向移動地被保持， 且配置於光罩保持框12内。 再者，如圖4所示，於光罩保持部基底η之上表面在光 152499.doc 201126280 罩保持部基底11之開口部lla之x軸方向之兩端部設置有根 據需要而對光罩M之兩端部進行遮蔽之遮蔽孔㈣。該遮 蔽孔仫38係藉由包含馬達、滾珠螺桿、及線性導軌等之遮 蔽孔㈣動機構39而可於Χ軸方向移動，且對光罩Μ之兩端 部之遮蔽面積進行調整。再者，料孔㈣可不僅設置於 開口。[Μ 1 a之X轴方向之兩端部，而且亦同樣設置於開口部 11 a之Y軸方向之兩端部。 如圖2及圖3所示，基板保持部2〇係配置於基板保持部移 動機構40上，且具備工件夾盤21，於該工件夾盤η之上表 面具有用以將基板w保持於基板保持部20之吸附面22。再 者，工件夹盤21係藉由真空吸附而保持基板w。 如圖2及圖3所示，基板保持部移動機構4〇包括：γ軸進給 機構41，其使基板保持部2〇於γ軸方向移動；χ軸進給機構 42，其使基板保持部2〇於X軸方向移動；以及ζ_傾斜調整機 構43，其進行基板保持部2〇之傾斜調整，並且使基板保持 部20於Ζ軸方向微動。 Υ軸進給機構41包括：一對線性導軌44，其等沿γ軸方向 而設置於裝置基底50之上表面；γ軸平台45,其藉由線性導 軌44而可於γ軸方向移動地予以支持；以及γ軸進給驅動裝 置46，其使Υ轴平台45於Υ軸方向移動。而藉由使γ軸進給 驅動裝置46之馬達46c驅動’並使滾珠螺桿軸46b旋轉，藉 此使Y軸平台45連同滾珠螺桿螺母46a—併沿線性導軌44之 導向軌道44a移動，從而使基板保持部20於γ軸方向移動。 又，X軸進給機構42包括：一對線性導執47，其等沿又軸 152499.doc 201126280 方向而設置於Y軸平台45之上表面；χ軸平台48，其藉由線 性導軌47而可於X軸方向移動地予以支持；以及χ軸進給驅 動裝置49，其使χ軸平台48於又軸方向移動。而藉由使χ軸 進給驅動裝置49之馬達49c驅動，並使滾珠螺桿軸49b旋 轉，藉此使X軸平台48連同未圖示之滾珠螺桿螺母一併沿線 性導轨47之導向轨道47a移動，並使基板保持部2〇於父軸方 向移動。 Z-傾斜調整機構43包括：馬達43a，其設置於χ軸平台48 上，滾珠螺桿軸43b，其藉由馬達43a而旋轉驅動；楔狀螺 母43c，其形成為楔狀，且螺合於滾珠螺桿軸43b ;以及楔 部43d，其以楔狀突設於基板保持部2〇之下表面，且卡合於 楔狀螺母43c之傾斜面。而且，於本實施形態中，z_傾斜調 整機構43係於χ軸平台48之χ軸方向之一端側（圖i之近前 側）》又置2台、於另一端側設置i台（圖2之裏側，參照圖3 )， 合計設置3台，且各自獨立地被驅動控制。再者，z傾斜調 整機構43之設置數量係任意。 而且，Z-傾斜調整機構43係藉由馬達43a使滾珠螺桿軸 43b旋轉驅動，藉此使楔狀螺母43c於χ軸方向水平移動，且 該水平移動運動藉由楔狀螺母43c及楔部43d之斜面作用而 切換成尚精度之上下微動運動，從而使楔部43(}於z方向微 動。因此’藉由使3台Z-傾斜調整機構43僅以相同之量驅 動，可使基板保持部20於Z軸方向微動，又，藉由使3台2_ 傾斜調整機構43獨立地驅動，可進行基板保持部2〇之傾斜 調整。藉此，可對基板保持部2〇之2軸、傾斜方向之位置進 152499.doc -10· 201126280 行微調整而使光罩Μ與基板W保持規定之間隔而平行地相 向。 進而’如圖2及圖3所示，於第1鄰近曝光裝置本體2中設 置有檢測基板保持部2 0之位置的位置測定裝置即雷射測距 裝置60。該雷射測距裝置60係對於驅動基板保持部移動機 構40時產生之基板保持部2〇之移動距離進行測定者。 雷射測距裝置6 0包括：X軸用鏡6 4，其以固定於撑桿（未 圖示）並沿基板保持部2 0之X轴方向側面的方式配設；γ抽用 鏡65’其以固定於撐桿71並沿基板保持部2〇之γ軸方向側面 的方式配設；X軸測距器（測距器）61及偏轉測定器（測距 器）62 ’其等配設於裝置基底5〇之X轴方向端部，將雷射光 (測量光）照射至X軸用鏡64，並接收藉由X軸用鏡64而反射 之雷射光’從而測量基板保持部2〇之位置；以及1台γ軸測 距器（測距器）63，其配設於裝置基底50之γ軸方向端部，將 雷射光照射至Y軸用鏡65，並接收藉由γ轴用鏡65而反射之 雷射光’從而測量基板保持部2〇之位置。 而且’雷射測距裝置60係藉由自X軸測距器61、偏轉測定 器62、及γ軸測距器63照射至χ軸用鏡64、及γ軸用鏡“之 雷射光由X軸用鏡64及γ軸用鏡65反射，而高精度地測量基 板保持部20之X軸、γ軸方向之位置。又，χ軸方向之位置 資料係藉由X軸測距器61測定，β方向之位置係藉由偏轉測 定器62測定。再者，基板保持部2〇之位置係參考藉由雷射 測距裝置60所測定之X軸方向位置、γ軸方向位置、及㊀方 向之位置，並藉由加以適當修正而算出。 152499.doc 201126280 圖5(a)係示意性地表示第1鄰近曝光裝置本體2之工件失 盤21之吸附面之俯視圖’圖5(b)係圖5(a)之V部放大圖。於 工件夾盤21之吸附面22上形成有獨立之7個吸附區域，即， 第1〜第7吸附區域80a、…、80g。中央之第1吸附區域8〇a與 其外側之第2吸附區域80b係藉由四邊形狀之第1隔離壁81 a 隔離’第2吸附區域80b與其外側之第3吸附區域80c係藉由 四邊形狀之第2隔離壁82a隔離。進而，第3吸附區域80c與 形成於其外側之4個部位之第4〜第7之吸附區域80d、80e、 80f、80g係藉由四邊形狀之第3隔離壁83 a隔離。 因此’第1吸附區域80a係藉由第1隔離壁8 1 a而劃分，第2 吸附區域80b係劃分於第1及第2隔離壁81a、82a之間，第3 吸附區域80c係劃分於第2及第3隔離壁82a、83a之間。進 而，第4〜第7吸附區域80d、…、80g係藉由第3隔離壁83a、 及成為吸附面22之外周緣之周緣壁84a而劃分。再者，周緣 部84a之形狀係對應於長方形狀之基板w之尺寸，且對應於 基板W之方向而進行第4〜第7吸附區域80d〜80g之吸附。 又’於各吸附區域8〇a、…、80g内形成有具有與各隔離 壁81a、82a、83a之高度等同之高度的複數個突起85,且各 隔離壁81a、82a、83a與突起85可抵接於基板W之背面。又， 去除各隔離壁81a、82a、83a與突起85之外的部分係成為各 吸附區域80a、...、80g之低部86。再者，隔離壁81a、82a、 83a與突起85之加工可為端銑刀等之切削，亦可為喷丸處 理。 進而’於各吸附區域80a、...、80g内之各低部86之表面 152499.doc 201126280 、87g。而且，於吸附 87g進行真空吸引，藉 上’開設有複數個正負壓孔87a、... 基板W時，自該等正負壓孔87a、..、 此將由各吸附區域80a、…、80g之各低部86、各隔離壁8丨a 82a、83a及周壁部84a、及基板霄之背面包圍的空間成為負 壓。於卸載基板W時’為使基板W易於脫離，而對空間内進 行大氣釋放或自正負壓孔87a、…、87g導入正壓。再者， 於吸附基板w時，藉由自内側之第丨吸附區域8〇a向外側緩 慢地進行而可減小撓曲。又，於曝光基板貨時，可於已藉 由正負壓孔87a、…、87g進行真空吸引之狀態下進行，亦 可於已局部性或整體性地解除各吸附區域之真空吸引之狀 態下進行。 又’於吸附面22上形成有複數個銷孔（未圖示），該等銷 孔係於藉由工件承载器（未圖示）將基板W搬送至加工夹盤 21時使自吸附面22進出之複數個銷（未圖示）可進退。 再者’由於吸附面22於各鄰近曝光裝置本體2、3、4、5 中具有大致相同之外形尺寸，故而如圖丨所示，最外側之周 緣壁84a、…、84d之位置於各鄰近曝光裝置本體2〜5中相同。 此處，如圖1所示，第丨〜第4鄰近曝光裝置本體2〜5之第1 隔離壁81a、…、81d、第2隔離壁82a、…、82d、及第3隔離 壁83a、_·.、83d係分別形成於彼此不同之位置。 因此，於使用第1〜第4鄰近曝光裝置本體2〜5而進行第卜 第4層之曝光轉印時，與基板w之背面接觸之各隔離壁 81a、··.、〜81d、82a、·.· ' 82d、83a、…、83d之位置各自 不同。圖6係將於第4鄰近曝光裝置本體5之加工夾盤21之吸 152499.doc •13- 201126280 附面22載置有基板w時的圖1之VId部、第丨〜第3鄰近曝光穿 置本體2〜4之第2及第3隔離壁82a、…、82c、83a、...、83(： 與基板W接觸之位置的圖！之VIa〜VId部藉由一點鏈線重疊 而表示。 若使用如上所述般構成之第〗〜第4鄰近曝光裝置本體 2、…、5向基板W進行第丨〜第4層之曝光轉印，則於隔離壁 之位置上，藉由溫度變化之影響而使基板產生少許變形， 但由於隔離壁 81a、...、〜81d、82a、...82d、83a、…、83d 之位置於4個曝光裝置本體2、·、5中各自不同，故而不存 在於基板W上被目測確認為曝光不均之情形，而且，可抑 制曝光分佈之偏差的產生。再者，周緣壁84a、…、8切接 觸之基板W的位置係成為圖案曝光轉印至基板评之圖案區 域之外侧，故而即便各曝光裝置本體2、3、4、5之周緣壁 之位置相同亦不會影響曝光精度。 再者，本發明並不限定於上述各實施形態，可於不脫離 本發明之要旨之範圍内進行適當變更。 於上述實施形態中，隔離壁係藉由直線形狀之連續部分 而形成，突起係藉由正方形狀而形成，但亦可如圖7及圖8 所示般變更成各種形狀。 例如，如圖7(a)〜(h)所示，隔離壁90亦可藉由連續部分 90a、及於該連續部分9〇a之兩側延伸於與連續部分正交 之方向的延伸部分90b構成。藉此，可較小隔離壁9〇附近之 基板W之非接觸部分的撓曲，且可使光罩M與基板％之間隙 1更均勻化，從而可抑制曝光不均或曝光分佈之偏差。 152499.doc -14· 201126280 具體而言，如圖7⑷、⑷〜⑻所示，隔離壁9〇亦可藉 續部分90a、及位於該連續部分9Qa之兩側向突㈣丄 延伸部分_構纟，且如圖·斤示，隔離壁9〇之延伸部分 90b亦可設為向於隔離壁9〇之連續部分9〇a延伸之方向上刀 接的突起9i間之中間位置延伸…如圖7(c)所示，連續： 分90a之一側之延伸部分9仙亦可設為向突起μ延伸，且另 一側之延伸部分90b向突起91間之中間位置延伸。 又，如圖7⑷、圖警圖7(g)所示，於連續部分_延伸 之方向上相鄰的延伸部分9Gb間之連續部分9Ga可根據端 刀之形狀形成為f曲形狀，又，如圖7(f)所示，連續部分心 亦可連成鋸齒狀而非直線狀。進而，如圖7⑷、圆7⑷、圓 7⑷所示’延伸部分9013亦可於連續部分9〇a之兩側，以彼此 之延伸之位置不同的方式形成，或於心⑷中，使延伸部分 90b之前端以構成突起9丨之方式延伸。 進而，如圖7⑷〜7⑷所示，使錄隔離壁90附近之突起 之間隔比位於與隔離壁9〇分離之部分的突起^間隔更 短》於隔離壁90與鄰近之突起91之間的間隔較大之情形 時，存在非接觸部分之撓曲變大從而產生曝光不均之可能 性，但如圖7⑷〜圖7(c)所示，藉由縮短位於隔離壁％附近 之突起91之間隔，可減小非接觸部分之撓曲，從而可抑制 曝光不均。 又，如圖8(a)所^隔離壁9〇可藉由連續部分9〇a、及於 吕亥連續部分9 0 a之兩側向盘遠綠如、 W门興運續部分90a分離並與連續部分 術正交之方向延伸的長方形部分9㈣成，亦可如圖8⑻ 152499.doc •15. 201126280 及圖8(c)所示般藉由2個或3個連續部分構成。如上所 述’藉由利用複數個連續部分90a構成隔離壁，以分散與基 板W之接觸部分從而難以受到溫度之影響，藉此可減小^ 接觸部分之撓曲。 進而如圖8⑷〜8(§)所不，隔離壁9〇亦可藉由連續部分 9〇a及於錢續部分9〇a之—側、或兩側沿連續部分術不· 連續地延伸之長方形部分_、9Ge或波浪線部分幫構成。 即，隔離壁90可相對於連續部分術對稱，亦可為非對稱。 另外，如圖8(h)所示，隔離壁9〇亦可將如圓形或正方形 之突起90g以埋在於形成隔離壁9〇之方向上鄰接的突起卯g 間之間隙的方式配置複數行，或如圖8⑴所示般使突起9〇i 之間隔變窄而使不連續之突起9Gg、9Gi集中，藉此將相鄰 之吸附區域隔離。 再者’各曝光裝置本體之隔離壁只要不是與基板之背面 於相同之位置完全地重疊而接觸者即可，但亦可局部性地 重疊而接觸。又，上述隔離壁9〇之形狀可適當組合使用。 又’於本實施形態中’係採用使各鄰近曝光裝置本體之 吸附面不同之構成’但亦可使成為圖帛區域之外側的周緣 部之寬度形成地較寬而使吸附面各自成為相同之構成，並 使基板之黏合位置於複數個鄰近曝光裝置本體中稍微偏移 · 而進行黏合。藉此，隔離壁於每個曝光裝置本體中之不同 . 的位置與基板之背面抵接，從而可抑制曝光不均或曝光分 佈之偏差的產生。再者，周緣部之寬度設計成比複數個鄰 近曝光裝置本體間最大偏移量更寬。 152499.doc -16 · 201126280 [第2實施例j 其次’根據圖9〜圓17對本發明之第2實施例之曝光單元及 基板之曝光方法進行詳細說明。 圖9所示，本發明之曝光單元1包括：第1鄰近曝光聲置 本體2，其對第1層進行曝光；第2鄰近曝光裝置本體3 f其 對第2層進仃曝光；第3鄰近曝光裝置本體4,其對第3層進 订曝光’以及第4鄰近曝光裝置本體5,其對第4層進行曝 光。再者’使用於塗佈機、預對準、顯影等前處理及後處 理步驟中之裝置、及搬送基板之搬送裝置等均省略圖示。 又’關於第1〜第4鄰近曝光裝置本體2、3、4、5,只要下述 基板保持部之吸附面為不同之構成即可，故而以下僅對第工 鄰近曝光裝置本體2進行詳述。 如圖1〇所示，第1鄰近曝光裝置本體2包括：光罩保持部 其保持光罩Μ ;基板保持部（基板台）2〇 ’其保持玻 板(被曝光材)W;照明光學系統3。，其照射圖案曝光用之： 光用光；基板保持部移動機構4〇，其使基板保持部麟乂 轴、Y轴、Z轴方向移動’且進行基板保持部20之傾斜調整； 以及裝置基底50,其支持光罩保持部1〇及基板保持部移動 機構40。 再者，玻璃基板w(以下，簡稱為「基板Wj)係與光㈣ 相向配置’且為了對該光上所描缚之光罩圖案進行曝 光轉印，表面（光罩Μ之相向面側）塗佈有紐劑。又，光罩 Μ包含熔融石英’且形成為長方形狀。 為了便於說明而自照明光學系統3〇進行說明，照明光學 152499.doc • 17- 201126280 系’先30包括·例如高壓水銀燈3 i，其作為紫外線照射用之 光源’凹面鏡32 ’其對自該高壓水銀燈31照射之光進行聚 光，兩種光學積分器33，其等可切換自如地配置於該凹面 鏡32之焦點附近；平面鏡35、36及球面鏡37，其等用以改 變光路之方向；以及曝光控制用快門34,其配置於該平面 鏡36與光干積分器33之間並對照射光路進行開閉控制。 而且’於照明光學系統对，若在曝料曝光控制用快 門34受到打開控制’則自高壓水銀燈31照射之光經過圖1〇 所不之光路L，作為圖案曝光用之平行光對保持於光罩保持 部1〇之光罩M、進而對保持於基板保持部2〇之基板w之表面 進订垂直照射。藉此，光罩M之光罩圖案曝光轉印至基板W 上。 如圖10〜圖12所示，光罩保持部10包括：光罩保持部基底 U ’其於中央部形成有矩形形狀之開口部Ua :光罩保持框 12，其可於X軸、γ軸、θ方向移動地安裝於光罩保持部基 底】1之開口部11a;夾盤部〗4,其安裝於光罩保持框12，且 吸附保持光罩Μ ;以及光罩位置調整機構16，其使光罩保 持框12及夾盤部於Χ軸、γ軸、0方向移動，且調整該光罩 保持框12上所保持之光罩]^之位置。 光罩保持部基底11係藉由立設於裝置基底5〇上之支柱 51、及設置於支柱51之上端部之ζ軸移動裝置52而可於2軸 方向移動地被支持，且配置於基板保持部2〇之上方。2軸移 動裝置52係例如包括包含馬達及滾珠螺桿等之電動致動 器、或空壓氣缸等，並進行單純之上下動作，藉此使光罩 152499.doc -18· 201126280 保持部1 0升降至規定之位置。再者，z軸移動裝置52係於光 罩Μ之更換或工件夾盤21之清掃等時使用。 光罩位置調整機構16包括：1台Υ軸方向驅動裝置I6y，其 安裝於沿光罩保持框12之X軸方向之一邊；以及2台X軸方 向驅動裝置16x ’其等安裝於沿光罩保持框12之¥軸方向之 一邊0 而且，光罩位置調整機構16中，藉由使}台丫軸方向驅動 裝置16y驅動而使光罩保持框12於γ軸方向移動，藉由相同 地使2台X軸方向驅動裝置16χ驅動而使光罩保持框12於乂 軸方向移動。又，藉由驅動2台X軸方向驅動裝置16χ中之任 一者而使光罩保持框12於Θ方向移動（圍繞2軸之旋轉）。 進而，如圖12所示，於光罩保持部基底u之上表面設置 有測定光罩Μ與基板W之相向面間的間隙之間隙感測器 17、及用以確認保持於央盤部14的光罩河之安裝位置之光 罩用對準排列相機18。該等間隙感測器17及光罩用對準排 列相機18係經由移動機構19而可於χ軸、γ軸方向㈣㈣ 保持’且配置於光罩保持框12内。 再者，如圖12所示’於光罩保持部基底"之上表面，在 光罩保持部基底U之開qlla之㈣方向之兩端部設置有 根據需要而對光單Μ之兩端部進行遮蔽之遮蔽孔㈣。該 遮蔽孔徑38係藉由包含馬達、滾珠螺桿 '及線性導軌等之 遮蔽孔徑驅動機構39而可於Χ轴方向移動，且對光罩μ之兩 端部之遮蔽面積進行調整。再者，遮蔽孔徑％可不僅設置 於開口部Ua之樹向之㈣部，而且㈣樣設置於開口 I52499.doc -19- 201126280 部11 a之Y轴方向之兩端部。 如圖10及圖11所示，基板保持部2〇係設置於基板保持部 移動機構40上’且包含工件夾盤21，該工件夾盤2丨之上表 面具有用以將基板W保持於基板保持部2〇之吸附面22。再 者，工件夾盤21係藉由真空吸附而保持基板W。 如圖10及圖11所示，基板保持部移動機構4G包括：Y轴進 給機構41 ’其使基板保持部2〇於Y軸方向移動；X軸進給機 構42’其使基板保持部麟乂軸方向移動，·以及傾斜調整 機構43，其進行基㈣持部2()之傾斜調整，並且使基板保 持部20於Z抽方向微動。 Y轴進給機構41包括：一對線性導軌44,其等沿Y軸方向 而設置於裝置基地5〇之上表面；γ轴平台45，其藉由線性導 軌44而可於Υ軸方向移動地得到支持；以及γ軸進給驅動裝 置46,其使γ軸平台45於¥轴方向移動。而且，使γ轴進於 驅動裝置46之馬達46c驅動，並使滾珠螺桿軸杨旋轉，藉 此使Y轴平σ 45連同滾珠螺桿螺母46a—併沿線性導軌44之 導向執道44a移動’並使基板保持㈣於γ軸方向移動。 對線性導執47，其等沿X軸 又’ X軸進給機構42包括 方向而設置於γ轴平台45之上表面；χ軸平台48，其藉由線 性導執47而可於χ軸方向移動地得到支持；以及X心給驅 動裝置49,其使Χ轴平台48於义轴方向移動。而且，使錄 進給驅動裝置49之馬達49e驅動，並使滾珠螺桿軸桃旋 轉，藉此使X軸平台48連同未圖示之滾珠螺桿螺母_併'線 性導執47之導向執道47a移動，並使基板保持部2·χ軸方 152499.doc -20- 201126280 向移動。 Z-傾斜調整機構43包括：馬達43a，其設置於χ軸平台μ 上，滚珠螺桿轴43b ’其藉由馬達43a而旋轉驅動；楔狀螺 母43c，其形成為楔狀且螺合於滚珠螺桿軸43b ;以及楔部 43d，其以楔狀突設於基板保持部2〇之下表面且卡合於楔 狀螺母43c之傾斜面。而且，於本實施形態中，z—傾斜調整 機構43係於X軸平台48之χ軸方向之一端側（圖9之近前側） 設置2台 '於另一側設置丨台（圖丨〇之裏側，參照圖丨丨），合計 設置3台，且各自獨立地被驅動控制。再者，z•傾斜調整機 構43之設置數量係任意。 而且’ Z-傾斜調整機構43係藉由馬達43a使滾珠螺桿軸 43b旋轉驅動，藉此楔狀螺母43(；於乂軸方向水平移動，且該 水平移動運動藉由楔狀螺母43c及楔部43d之斜面作用而切 換至高精度之上下微動運動，從而楔部43d於Z方向微動。 因此，藉由使3台Z-傾斜調整機構43僅以相同之量驅動，可 使基板保持部20於Z軸方向微動，又，藉由使3台Z-傾斜調 整機構43獨立地驅動’可進行基板保持部2〇之傾斜調整。 藉此，可對基板保持部20之Z轴、傾斜方向之位置進行微調 整而使光罩Μ與基板W保持規定之間隔而平行地相向。 進而’如圖10及圖11所示，於第1鄰近曝光裝置本體2中 設置有檢測基板保持部20之位置的位置測定裝置即雷射測 距裝置60。該雷射測距裝置60係對於驅動基板保持部移動 機構4 0時產生之基板保持部2 0之移動距離進行測定者。 雷射測距裝置60包括：X軸用鏡64，其以固定於撐桿（未 152499.doc -21 - 201126280 圖不）而沿基板保持部20之乂軸方向側面的方式配設；γ軸用 鏡65 ’其以固定於撐桿71而沿基板保持部2〇之γ軸方向側面 的方式配設；X軸測距器（測距器）61及偏轉測定器（測距 器，其等配設於裝置基底50之X軸方向端部，將雷射光 (測罝光）照射至X軸用鏡64，並接收藉由χ軸用鏡64而反射 之雷射光’從而測量基板保持部2〇之位置；以及1台Υ軸測 距器（測距器）63，其配設於裝置基底50之Υ軸方向端部，將 雷射光照射至Υ軸用鏡65，並接收藉由γ軸用鏡65而反射之 雷射光’從而測量基板保持部2〇之位置。 而且’雷射測距裝置60係藉由自X軸測距器61、偏轉測定 器62、及Υ軸測距器63照射至X軸用鏡64及丫軸用鏡&之雷 射光由X軸用鏡64及Υ轴用鏡65反射，而高精度地測量基板 保持部20之X軸、γ軸方向之位置。又，X軸方向之位置資 料係藉由X軸測距器61測定，Θ方向之位置係藉由偏轉測定 器62測定。再者，基板保持部2〇之位置係參考藉由雷射測 距裝置6 0測定之X抽方向位置、γ抽方向位置、及Q方向之 位置，並藉由加以適當修正而算出。 圖13係示意性地表示第丨鄰近曝光裝置本體2之工件夾盤 21之吸附面之俯視圖。於工件夾盤21之吸附面22上形成有 獨立之13個吸附區域，即，第1〜第13吸附區域8〇〇a '…、 800m。第1吸附區域800a係藉由四邊形狀之第1隔離壁81〇a 而隔離’進而，第2〜第9吸附區域800b〜800i依次鄰接於第1 吸附區域800a而由隔離壁810b〜810i隔離，並配置成矩陣 狀。與第1吸附區域800a之隔離壁810a鄰接的第2吸附區域 152499.doc -22- 201126280 800b之隔離壁810b係於其鄰接部為共通之壁。又，與第j 吸附區域800a之隔離壁810a鄰接的第4吸附區域8〇〇d之隔 離壁810d亦同樣於其鄰接部為共通之壁。又，關於其他吸 附區域亦相同地設置。 於第1吸附區域800a〜第9吸附區域8〇〇i之周圍，第1〇周圍 吸附區域800j〜第13周圍吸附區域8〇〇m藉由隔離壁 810j〜810m而隔離，且形成為長方形狀。與第1〇周圍吸附區 域800j之隔離壁810j鄰接的第7吸附區域800g之隔離壁 81(^、第8吸附區域80011之隔離壁81011、及第9吸附區域80(^ 之Pwj離壁81 0 i係於其鄰接部為共通之壁。對其他周圍吸附 區域亦同樣地設置。再者，第1 〇周圍吸附區域800j〜第13周 圍吸附區域800m係對應於長方形狀之基板w之尺寸，且根 據基板W之方向而使用。 圖14(A)〜(D)係圖13之A部、B部、C部、D部之各部分之 放大圖。於各吸附區域800a、…、800m内形成有具有與各 隔離壁810a、…、810m之高度等同的高度之複數個突起85， 且各隔離壁810a、…、810m及突起85可抵接於基板W之背 面。又’去除各隔離壁810a、…、810m及突起85之外的部 刀係成為各吸附區域800a、…、800g之低部86。再者，各 隔離壁810a、…、810m及突起85之加工可為端銑刀等之切 削，亦可為噴丸處理。 進而’於各吸附區域8〇〇a、…、800m内之各低部86之表 面上’開設有複數個正負壓孔8 7。而且，於吸附基板w時， 自該等正負壓孔87進行真空吸引，藉此將由各吸附區域 152499.doc •23· 201126280 800a、…、800m之各低部86、各隔離壁810a、…、81 〇m及 周圍吸附區域800j、.·.、800m、及基板W之背面包圍的空 間成為負壓。於卸載基板W時，為使基板W易於脫離，而對 空間内進行大氣釋放或自正負壓孔87導入正壓。 圖15(B)係於圖15(A)所示之第1鄰近曝光裝置本體2之工 件夾盤21的吸附面22(—點鏈線）上載置有基板W(實線）。 又’圖15(B)之基板W之斜線部係表示曝光之區間 Sel〜Se4。於該情形時，基板w係以所謂縱置而使用，而作 為吸附區域係使用第1吸附區域8〇〇a〜第9吸附區域8〇〇丨、第 10周圍吸附區域800j、及第12周圍吸附區域8001。 該等吸附區域係藉由設置於控制部70(參照圖1 〇)之吸附 控制部70a(參照圖1 0)而控制。吸附控制部7〇a係對於與曝光 用光之照射區域對應之吸附區域獨立於其他吸附區域而進 行控制。例如，可將對應於曝光用光照射區域之吸附區域 控制成非吸附’又，亦可對於與曝光用光照射區域對應的 吸附區域較其他吸附區域進一步進行減壓控制。 關於對基板W之區間Se l~Se4進行曝光時的基板w之吸 附控制，利用圖16(A)〜(D)進行說明。 首先，如圖16(A)所示，曝光用光照射至區間sei，藉此， 區間Sel曝光’但此時區間Sel正下方（曝光用光照射區域） 之第1吸附區域800a、第2吸附區域8〇〇b、第4吸附區域 8〇〇d、及第5吸附區域800e被控制成非吸附狀態。相反，表 示區間S e 1以外（曝光用光照射區域）之l字線部Q1之第3吸 附區域800c、第6吸附區域800f、第7吸附區域800g、第8吸 152499.doc -24· 201126280 附區域800h、及第9吸附區域800i被控制成吸附狀態。於該 情形時’第10周圍吸附區域8〇〇j及第12周圍吸附區域8001 可進行吸附且亦可不進行吸附。如上所述，因不進行曝光 用光照射區域正下方之吸附區域之吸附，可避免因吸附引 起之基板之變形。 其次’藉由基板保持部移動機構4〇使基板保持部20於X 軸方向步進移動，且如圖16(B)所示，曝光用光照射至區間 Se2，藉此，區間Se2曝光，但此時區間se2正下方（曝光用 光照射區域）之第3吸附區域800c、第2吸附區域800b、第6 吸附區域800f、及第5吸附區域8〇〇e被控制成非吸附狀態。 相反’表示區間Se2以外（曝光用光照射區域）之l字線部Q2 之第1吸附區域800a、第4吸附區域800d、第7吸附區域 800g、第8吸附區域800h、及第9吸附區域800i被控制成吸 附狀態。 再者，該吸附區域之切換係於區間Se 1之曝光結束後且在 向區間Se2之步進移動前進行β藉由此種方式，可防止於步 進時基板W產生偏移。 其次’藉由基板保持部移動機構4〇使基板保持部2〇於Υ 軸方向步進移動，且如圖16((：)所示，曝光用光照射至區間 Se3，藉此，區間Se3曝光，但此時區間Se3正下方（曝光用 光照射區域）之第9吸附區域8〇〇丨、第8吸附區域g〇〇h、第6 吸附區域800f'及第5吸附區域80〇6被控制成非吸附狀態。 相反，表示區間Se3以外（曝光用光照射區域）之[字線部Q3 之第7吸附區域800g、第4吸附區域800d、第^及附區域 152499.doc -25- 201126280 800a、第2吸附區域800b、及第12吸附區域8001被控制成吸 附狀態。 其次’藉由基板保持部移動機構40使基板保持部20於X 軸方向步進移動’且如圖16(D)所示，曝光用光照射至區間 Se4，藉此’區間Se4曝光’但此時區間Se4正下方（曝光用 光照射區域）之第7吸附區域800g、第8吸附區域800h、第4 吸附區域800d、及第5吸附區域800e被控制成非吸附狀態。 對此，表示區間Se4以外（曝光用光照射區域）之l字線部Q4 之第1吸附區域800a、第2吸附區域800b、第3吸附區域 800c、第6吸附區域800f、及第9吸附區域800i被控制成吸附 狀態。 又’於上述實施形態中’在步進前已切換吸附區域，但 亦可於步進時切換吸附區域。其原因在於，於步進時，只 要存在一直處於吸附狀態之吸附區域即可，進而，只要吸 附曝光光照射區域以外之任一吸附區域則足夠。 例如，於自區間Sel向區間Se2之步進時，第7吸附區域 800g、第8吸附區域800h、及第9吸附區域8〇〇i係一直處於 吸附狀態，故而成為自第3吸附區域800c '第6吸附區域800f 向第1吸附區域800a、第4吸附區域800d切換吸附控制。 進而’圖17(A)及17(B)係對一個基板W曝光4個區間（所謂 附帶4個面）’但並不限定於此，可適用於所有附帶面之情 形。例如，圖16(A)係將附帶6個面之基板w(橫向上較長之 基板）橫置者’且曝光時之吸附係與上述實施形態相同地進 行。於該情形時，使用第11周圍吸附區域8〇〇k及第13周圍 152499.doc •26· 201126280 吸附區域800m。又’圖17(B)係將附帶6個面之基板w(縱向 上較長之基板）縱置者，且曝光時之吸附係與上述實施形態 相同地進行。於該情形時，使用第1〇周圍吸附區域肋⑺及 第12周圍吸附區域8〇〇1。 再者’於吸附面22形成有複數個銷孔（未圖示）’該等銷 孔係於藉由工件承載器（未圖示）將基板W搬送至工件夾盤 21時使自吸附面22進出之複數個銷（未圖示）可進退。 若使用如上所述構成之第丨〜第4鄰近曝光裝置本體 2、…、5向基板W進行第1〜第4層之曝光轉印，則於隔離壁 之位置’因溫度變化之影響而使基板產生少許變形，但無 因吸附基板而引起的基板之變形，故而不存在於基板％上 被目測確認為曝光不均之情形，而且，可抑制曝光分佈之 偏差之產生。再者，本發明並不限定於上述各實施形態， 可於不脫離本發明之要旨之範圍内適當變更。 於上述實施形態中，第1〜第9吸附區域800a〜800i之隔離 壁81 0a〜8 10i係以非直線之波浪形狀而形成，且周圍吸附區 域800j、…、800m之周圍隔離壁810j、…、810m係藉由直 線形狀之連續部分而形成，但第丨〜第9吸附區域800a〜800i 之隔離壁81 〇a〜8 1 Oi亦可由直線形成，且周圍吸附區域 8〇〇j、…、800m之周圍隔離壁810j、~、810m亦可藉由非直 線即波浪形狀之連續部分形成。又，突起係分別藉由圓形 狀而形成’但亦可設為正方形狀，可使用多種形狀。 本案係基於2009年11月25曰申請之曰本專利申請（曰本 專利特願2009-267918號）、及2010年1月28曰申請之曰本專 152499.doc •27· 201126280 利申請（曰本專利特願2010·016087號）者，其内容以參考之 形式併入本文中。 【圖式簡單說明】 圖1係表示本發明之第i實施例之曝光單元之模式圖； 圖2係用以說明應用於圖1之曝光單元之鄰近曝光裝置本 體之局部分解立體圖； 圖3係圖2所示之鄰近曝光裝置本體之正面圖； 圖4係圖2所示之光罩保持部之放大立體圖； 圖5(a)係圖1所示之基板保持部之正面圖，（b)係（a)之v部 放大圖； 圖6係將圖7之各鄰近曝光裝置本體之基板保持部之 Via〜VId部重疊而表示之放大圖； 圖7(a)〜(h)係表示突起及隔離壁之各種變形例之圖； 圖8(a)〜(i)係表示隔離壁之各種變形例之圖； 圖9係表示本發明之第2實施例之曝光單元之模式圖； 圖10係用以說明應用於圖9之曝光單元之鄰近曝光裝置 之局部分解立體圖； 圖11係圖10所示之鄰近曝光裝置之正面圖； 圖12係圖1〇所示之光罩保持部之放大立體圖； 圖13係圖9所示之基板保持部之正面圖； 圖14(A)係圖13之A部放大圖，（b)係圖13之B部放大圖， (C)係圖13之C部放大圖’（D)係圖13之d部放大圖； 圖15(A)〜(B)係於圖9所示之基板保持部之正面圖中配置 有基板之圖； 152499.doc -28- 201126280 進·移動時的基板之吸 圖16(A)〜(D)係表示基板已進行步 附狀態之圖；及 圖Π(Α)〜（Β)係表示於圖9所示之其& / 心暴板保持部之正面圖中 配置有種類不同的基板之狀態之圖。 【主要元件符號說明】 1 曝光單元 2 第1鄰近曝光裝置本體 3 第2鄰近曝光裝置本體 4 第3鄰近曝光裝置本體 5 第4鄰近曝光裝置本體 10 光罩保持部 11 光罩保持部基底 11a 開口部 12 光罩保持框 12b 開口 14 夾盤部 16 光罩位置調整機構 1 6χ X軸方向驅動裝置 16y Y軸方向驅動裝置 17 間隙感測器 18 光罩用對準排列相機 19 移動機構 20 基板保持部 21 工件夾盤 152499.doc -29- 201126280 22 吸附面 30 照明光學系統 31 高壓水銀燈 32 凹面鏡 33 光學積分器 34 曝光控制用快門 35、36 平面鏡 37 球面鏡 38 遮蔽孔徑 39 遮蔽孔徑驅動機構 40 基板保持部移動機構 41 Y軸進給機構 42 X軸進給機構 43 Z-傾斜調整機構 43a ' 46c ' 49c 馬達 43b ' 46b 、 49b 滾珠螺桿軸 43c 楔狀螺母 43d 楔部 44 ' 47 線性導軌 44a、47a 導向軌道 45 Y軸平台 46 Y軸進給驅動裝置 46a 滾珠螺桿螺母 48 X軸平台 152499.doc • 30- 201126280 49 X軸進給驅動裝置 50 裝置基底 51 支柱 52 Z軸移動裝置 60 雷射測距裝置 61 X軸測距器 62 偏轉測定器 63 Y軸測距器 64 X軸用鏡 65 Y軸用鏡 70 控制部 70a 吸附控制部 71 撐桿 80a 第1吸附區域 80b 第2吸附區域 80c 第3吸附區域 80d 第4吸附區域 80e 第5吸附區域 80f 第6吸附區域 8〇g 第7吸附區域 81a、 81b、 • 81c、 81d 第1隔離壁 82a、 82b、 82c、 82d 第2隔離壁 83a、 83b、 83c、 83d 第3隔離壁 84a、 84b、 • 84c、 84d 周緣壁 152499.doc •31 - 201126280 85 、 90g 、 90i 、 91 突起 86 低部 87、87a、87b、87c、 正負壓孔 87d、87e、87f、87g 90 離壁 90a 續部分 90b 伸部分 90c 、 90d 、 90e 長方形部分 90f 波浪線部分 800a 第1吸附區域 800b 第2吸附區域 800c 第3吸附區域 800d 第4吸附區域 800e 第5吸附區域 800f 第6吸附區域 800g 第7吸附區域 800h 第8吸附區域 800i 第9吸附區域 BOOj 第10吸附區域 800k 第11吸附區域 8001 第12吸附區域 800m 第13吸附區域 810a 第1隔離壁 810b 第2隔離壁 -32- 152499.doc 201126280 810c 第3隔離壁 810d 第4隔離壁 810e 第5隔離壁 810f 第6隔離壁 81〇g 第7隔離壁 810h 第8隔離壁 810i 第9隔離壁 810j 第10周圍隔離壁 810k 第11周圍隔離壁 8101 第12周圍隔離壁 810m 第13周圍隔離壁 L 光路 M 光罩 Q1、Q2、 Q3、Q4 L字線部 Se1 、 Se2 、Se3 、 Se4 區間 V、Via、VIb、Vic、VId 部分 W 玻璃基板（被曝光材） X、Y、Z 方向 33- 152499.doc201126280 VI. Description of the Invention: [Technical Field] The present invention relates to an exposure unit including a plurality of exposure apparatus bodies and an exposure method of a substrate. [Prior Art] Conventionally, various types of exposure apparatuses for manufacturing a color filter substrate or a TFT (Thin Film Transistor) substrate of a flat panel display device such as a liquid crystal display device or a plasma display device have been proposed. The exposure apparatus holds the photomask by the mask holding portion and holds the substrate by the substrate holding portion, and the two are disposed adjacent to each other. Further, the reticle pattern drawn on the reticle is exposed and transferred to the substrate by illuminating the pattern exposure light from the mask side. Further, for example, in the case of manufacturing a color filter substrate, three BM (black matrix) layers, R (red), G (green), and B (blue) are sequentially used using four exposure apparatus main bodies. The colored layer is exposed to the substrate. In the exposure apparatus described in Patent Documents 1 and 2, in the substrate holding portion, a plurality of protrusions (embossing) are formed on the adsorption surface for adsorbing and holding the substrate, and adjacent ones are formed so as to form a plurality of adsorption regions. The isolation wall that isolates the adsorption zone. Further, the interval between the protrusions of the predetermined direction ± the partition wall and the interval between the adjacent protrusions are set to a predetermined width, whereby the amount of the substrate is substantially equal to the same, and the flatness of the substrate is improved. Suppress uneven exposure. Further, the substrate holding portion 10 described in Patent Document 3 includes a peripheral portion surrounding the suction space, a plurality of projections provided in the suction space, and a support portion extending from the peripheral edge portion toward the projection, and the substrate is held at a preferable flatness. [Previous Technical Literature] 152499. Doc 201126280 [Special. [Patent Document 1] JP-A-2009-212344 [Patent Document 2] JP-A-2009-198641 [Patent Document 3] WO2006/025341 [Summary of the Invention] [Problems to be Solved by the Invention] However, In the inside of the substrate holding portion, a cooling medium flows in order to cool the substrate, and when the substrate is held and held by the substrate holding portion, a temperature change occurs in the portion where the plurality of projections or the partition wall are in contact with each other and the portion that is not in contact with the substrate. In particular, in the portion of the substrate which is in contact with the continuous partition wall, there is a possibility that the temperature change of the portion which is not in contact with the portion becomes large, and a slight deformation occurs in the vicinity of the substrate which is in contact with the partition wall. Therefore, when a plurality of exposures are performed using a plurality of exposure apparatus bodies, if the position of the portion in contact with the partition wall is on the body of each of the exposure bodies, uneven exposure occurs in the corresponding position of the product that has been subjected to the plurality of exposures. Or the problem of deviation in the exposure distribution. Further, in the substrate holding portion described in the patent document, the above problems are not considered. The present invention has been made in view of the above problems, and it is possible to provide an exposure unit and a substrate which can suppress the occurrence of variations in the bow or the distribution of the exposure even if the product has been subjected to a plurality of exposures.技术I Solution to Problem] According to an embodiment of the present invention, the first exposure of the first squad is to sequentially expose the patterns of the plurality of top masks to the substrate of the main substrate, and the above 152499. Doc 201126280 The light unit includes a plurality of exposure apparatus bodies, and the plurality of exposure apparatus bodies include: a mask holding portion for holding the mask having the above pattern, a substrate holding portion including an adsorption surface for adsorbing and holding the substrate, and an irradiation exposure And irradiating the light-emitting portion of the plurality of exposure devices with the exposure light to expose the pattern of the photomask onto the substrate; and providing a phase on the adsorption surface of the substrate holding portion a partition wall formed by the adjacent adsorption region and abutting against the back surface of the substrate, and a plurality of protrusions that can abut on the back surface of the substrate in each of the adsorption regions, wherein each of the plurality of exposure device bodies remains The adsorption faces of the portions have substantially the same outer dimensions, and the partition walls of the substrate holding portions are formed at different positions in each of the exposure device bodies. According to an embodiment of the present invention, the exposure method of the present invention uses a plurality of exposure device bodies to sequentially expose the patterns of the masks to the substrate, and the plurality of exposure device bodies include a mask that holds the mask with a pattern. a holding portion, a substrate holding portion that adsorbs and holds an adsorption surface of the substrate, and an irradiation portion that irradiates the light for exposure, and irradiates the pattern of the photomask onto the substrate by irradiating the exposure light. The exposure method includes the steps of: abutting the partition wall separating the adjacent adsorption regions of the adsorption surface from the back surface of the substrate at different positions in each of the exposure unit bodies by the plurality of The exposure device body sequentially exposes the substrate. [Effects of the Invention] According to the exposure unit of the present invention, the partition walls formed on the respective adsorption faces of the plurality of exposure device bodies are formed in different thicknesses of each exposure device body 152499. Doc 201126280 position, so even if it is a product that has completed multiple exposures, it can suppress the unevenness of exposure caused by the isolation wall or the deviation of the exposure distribution. Moreover, according to the exposure method of the substrate of the present invention, since the partition walls of the substrate are in contact with the back surface of the substrate at different positions in the body of each exposure device and are sequentially exposed by a plurality of exposure device bodies, even if The product which completes the plurality of exposures can also suppress the occurrence of variations in exposure unevenness or exposure distribution caused by the partition walls. [Embodiment] [First Embodiment] Hereinafter, an exposure unit and a substrate exposure method according to a third embodiment of the present invention will be described in detail based on the drawings. As shown in FIG. 1, the exposure unit i of the present invention comprises: a first adjacent exposure device body 2 for exposing the first layer; a second adjacent exposure device body 3 for exposing the second layer; and a third adjacent exposure The apparatus body 4 exposes the third layer; and the fourth adjacent exposure apparatus body 5 exposes the fourth layer. Further, the apparatus used in the pre-processing and post-processing steps such as the coater, the pre-alignment, and the development, and the transport apparatus for transporting the substrate are omitted. Further, the first to fourth proximity exposure apparatus main bodies 2, 3, 4, and 5 may have different configurations in which the adsorption surfaces of the substrate holding portions described below are different. Therefore, only the second adjacent exposure apparatus main body 2 will be described in detail below. . As shown in FIG. 2, the first proximity exposure apparatus body 2 includes a mask holding portion W that holds a mask holder, and a substrate holding portion 2 that holds a glass substrate (exposed material; illumination optical system 30' as a pattern Irradiation mechanism for exposure; substrate holding portion moving mechanism 40' which causes the substrate holding portion 2 to be attached to the X-axis, the γ-axis, and the 152499. Doc -6 - 201126280 moves in the z-axis direction and performs tilt adjustment of the substrate holding portion 20; and the device substrate 50' supports the mask holding portion 10 and the substrate holding portion moving mechanism 40. Further, the 'glass substrate W (hereinafter simply referred to as "substrate W") is disposed opposite to the mask ,, and is applied to the surface of the mask pattern drawn on the mask '. The facing side is coated with a photosensitizer. Further, the mask Μ contains fused silica and is formed in a rectangular shape. For convenience of explanation, the illumination optical system 30 includes, for example, a high-pressure mercury lamp 3A, which is a light source for ultraviolet irradiation, and a concave mirror 32 that condenses light irradiated from the high-pressure mercury lamp 3丨. Two optical integrators 33, which are rotatably disposed near the focus of the concave mirror 32; plane mirrors 35, 36 and a spherical mirror 37 for changing the direction of the optical path; and an exposure control shutter 34 disposed at The plane mirror 36 and the optical integrator 33 are controlled to open and close the illumination light path. Further, in the illumination optical system 3, when the exposure control shutter 34 is subjected to the opening control at the time of exposure, the light irradiated from the high pressure mercury lamp 31 is vertically irradiated to the mask Μ and the substrate w through the optical path L shown in the drawing. The surface is used as a parallel light for pattern exposure. Thereby, the mask pattern of the mask is exposed and transferred onto the substrate W. As shown in FIG. 2 to FIG. 4, the mask holding portion 1 includes a mask holding portion base u having a rectangular opening portion 11a formed at a central portion thereof: a mask holding frame 12' which can be on the X-axis, γ The shaft and the θ direction are movably attached to the opening portion 11a of the reticle holding portion base 11; the chuck portion 14 is attached to the reticle holding frame 12, and the reticle holder is adsorbed and held; and the reticle position adjusting mechanism 16 is provided. The reticle holding frame and the disk portion are moved in the X-axis, the Υ-axis, and the 0-direction, and the adjustment is maintained at 152499. Doc 201126280 The position of the reticle on the reticle holding frame 12. The mask holding portion base 11 is supported by a pillar that is erected on the base 5 of the apparatus. Further, the crucible moving device 52, which is placed at the upper end portion of the support post 51, is supported in the direction of the biaxial direction and is disposed above the substrate holding portion 2A. The cymbal moving device 52 includes, for example, an electric actuator including a motor and a ball screw, or an air-pressure gas red, and the like, and performs a simple upper and lower operation to raise and lower the reticle holding portion to a predetermined position. Further, the cymbal moving device 52 is used when the reticle is replaced or the workpiece chuck 21 is cleaned or the like. The reticle position adjusting mechanism 16 includes a y-axis direction driving device i6y mounted on one side of the yoke axis direction of the reticle holding frame 12, and two other axis-direction driving devices 16x' The mask keeps the frame! One side of the γ axis direction of 2. Further, the reticle position adjusting mechanism (4) moves the reticle holding frame 12 in the z-axis direction by driving the β γ-axis direction driving device 16y, and drives the photoreceptor by driving the 2 σ X-axis direction driving device 丨6χ in the same manner. The frame η is moved in the X-axis direction. Further, the shutter holding frame 12 is moved in the θ direction (rotation around the two axes) by driving either of the two squeezing direction driving devices ^ & Further, as shown in FIG. 4, a gap sensor η for detecting a gap between the mask Μ and the opposing surface of the substrate is provided on the upper surface of the reticle holding portion base 1 及, and is used to ensure (10) the chuck. The mask of the position of the masking river of the portion j 4 is aligned with the camera 18. The gap sensor 17 and the photoalignment alignment camera 18 are held by the movement mechanism 19 so as to be movable in the x-axis and the γ-axis direction, and are disposed in the mask holding frame 12. Furthermore, as shown in FIG. 4, the surface of the reticle holder base η is on the light 152499. Doc 201126280 Both ends of the opening portion 11a of the cover holding portion base 11 in the x-axis direction are provided with shielding holes (four) for shielding both end portions of the mask M as needed. The shielding hole 38 is movable in the x-axis direction by a shielding hole (four) moving mechanism 39 including a motor, a ball screw, and a linear guide, and adjusts the shielding area of both ends of the mask. Furthermore, the hole (4) can be provided not only in the opening. Both ends of the X-axis direction of Μ 1 a are also provided at both end portions of the opening portion 11 a in the Y-axis direction. As shown in FIGS. 2 and 3, the substrate holding portion 2 is disposed on the substrate holding portion moving mechanism 40, and includes a workpiece chuck 21 having a surface on the upper surface of the workpiece chuck n for holding the substrate w on the substrate. The adsorption surface 22 of the holding portion 20. Further, the workpiece chuck 21 holds the substrate w by vacuum suction. As shown in FIGS. 2 and 3, the substrate holding portion moving mechanism 4 includes a γ-axis feeding mechanism 41 that moves the substrate holding portion 2 in the γ-axis direction, and a 进-axis feeding mechanism 42 that holds the substrate holding portion. 2〇 moves in the X-axis direction; and the ζ_tilt adjustment mechanism 43 performs tilt adjustment of the substrate holding portion 2, and causes the substrate holding portion 20 to be slightly moved in the z-axis direction. The cymbal feeding mechanism 41 includes a pair of linear guides 44 which are disposed on the upper surface of the apparatus base 50 in the γ-axis direction, and a γ-axis stage 45 which is movable in the γ-axis direction by the linear guide 44. Supported; and a gamma axis feed drive 46 that moves the cymbal platform 45 in the x-axis direction. By driving the motor 46c of the γ-axis feed drive unit 46 and rotating the ball screw shaft 46b, thereby moving the Y-axis table 45 together with the ball screw nut 46a and along the guide rail 44a of the linear guide 44, thereby The substrate holding portion 20 moves in the γ-axis direction. Further, the X-axis feed mechanism 42 includes: a pair of linear guides 47, which are further along the axis 152499. The doc 201126280 is disposed on the upper surface of the Y-axis platform 45; the cymbal platform 48 is movably supported in the X-axis direction by the linear guide 47; and the cymbal feed drive device 49 is provided for the cymbal platform 48 moves in the direction of the axis. On the other hand, by driving the motor 49c of the spindle feed driving device 49 and rotating the ball screw shaft 49b, the X-axis table 48 is guided along the guide rail 47a of the linear guide 47 together with a ball screw nut (not shown). The movement is performed, and the substrate holding portion 2 is moved in the direction of the parent axis. The Z-tilt adjustment mechanism 43 includes a motor 43a that is disposed on the cymbal platform 48, and a ball screw shaft 43b that is rotationally driven by a motor 43a; a wedge nut 43c that is formed in a wedge shape and screwed to the ball The screw shaft 43b and the wedge portion 43d are protruded from the lower surface of the substrate holding portion 2b in a wedge shape, and are engaged with the inclined surface of the wedge nut 43c. Further, in the present embodiment, the z_tilt adjustment mechanism 43 is placed on one side of the x-axis direction of the cymbal platform 48 (the front side of FIG. i), and two sets are provided on the other end side (FIG. 2). On the back side, referring to Fig. 3), three units are provided in total, and each is independently driven and controlled. Further, the number of settings of the z-tilt adjustment mechanism 43 is arbitrary. Further, the Z-tilt adjustment mechanism 43 rotationally drives the ball screw shaft 43b by the motor 43a, thereby horizontally moving the wedge nut 43c in the z-axis direction, and the horizontal movement movement is performed by the wedge nut 43c and the wedge portion 43d. The bevel action is switched to the fine motion of the upper and lower precision, so that the wedge portion 43 is slightly moved in the z direction. Therefore, the substrate holding portion can be made by driving the three Z-tilt adjustment mechanisms 43 by only the same amount. 20 is slightly moved in the Z-axis direction, and the tilting adjustment of the substrate holding portion 2 is performed by independently driving the three 2_ tilt adjusting mechanisms 43. Thereby, the two axes and the tilt direction of the substrate holding portion 2 can be adjusted. The position is 152499. Doc -10· 201126280 The micro-adjustment is performed so that the mask Μ and the substrate W are opposed to each other at a predetermined interval. Further, as shown in Fig. 2 and Fig. 3, a laser distance measuring device 60, which is a position measuring device for detecting the position of the substrate holding portion 20, is provided in the first proximity exposure device main body 2. The laser distance measuring device 60 measures the moving distance of the substrate holding portion 2 that is generated when the substrate holding portion moving mechanism 40 is driven. The laser distance measuring device 60 includes an X-axis mirror 64 that is fixed to a stay (not shown) and disposed along the side surface of the substrate holding portion 20 in the X-axis direction; the γ extraction mirror 65' It is fixed to the stay 71 and is disposed along the side surface of the substrate holding portion 2A in the γ-axis direction; the X-axis range finder (rangometer) 61 and the deflection measuring device (rangometer) 62' are disposed. At the end portion of the apparatus substrate 5A in the X-axis direction, the laser light (measuring light) is irradiated to the X-axis mirror 64, and the laser light reflected by the X-axis mirror 64 is received, thereby measuring the substrate holding portion 2 And a γ-axis range finder (rangometer) 63 disposed at an end portion of the device substrate 50 in the γ-axis direction, irradiates the laser light to the Y-axis mirror 65, and receives the mirror by the γ-axis 65 and the reflected laser light 'thereby measuring the position of the substrate holding portion 2'. Further, the 'laser ranging device 60 is irradiated to the x-axis mirror 64 and the gamma-axis mirror 64 from the X-axis range finder 61, the deflection finder 62, and the γ-axis range finder 63. The shaft mirror 64 and the γ-axis mirror 65 reflect the position of the substrate holding unit 20 in the X-axis and γ-axis directions with high precision. Further, the position data in the x-axis direction is measured by the X-axis range finder 61. The position in the β direction is measured by the deflection measuring device 62. Further, the position of the substrate holding portion 2 is referred to the X-axis direction position, the γ-axis direction position, and the direction measured by the laser ranging device 60. Position and calculated by appropriate correction. 152499. Doc 201126280 Fig. 5(a) is a plan view schematically showing an adsorption surface of the workpiece lost disk 21 of the first proximity exposure apparatus main body 2. Fig. 5(b) is an enlarged view of a portion V of Fig. 5(a). On the adsorption surface 22 of the workpiece chuck 21, seven independent adsorption regions, i.e., first to seventh adsorption regions 80a, ..., 80g are formed. The first adsorption region 8〇a in the center and the second adsorption region 80b on the outer side are separated by the first partition wall 81a having a quadrangular shape. The second adsorption region 80b and the third adsorption region 80c on the outer side are formed by a quadrangular shape. The second partition wall 82a is isolated. Further, the third adsorption region 80c and the fourth to seventh adsorption regions 80d, 80e, 80f, and 80g of the four portions formed on the outer side are separated by the third partition wall 83a having a rectangular shape. Therefore, the first adsorption region 80a is divided by the first partition wall 8 1 a , the second adsorption region 80 b is divided between the first and second partition walls 81 a and 82 a , and the third adsorption region 80 c is divided into the first 2 and between the third partition walls 82a and 83a. Further, the fourth to seventh adsorption regions 80d, ..., 80g are divided by the third partition wall 83a and the peripheral wall 84a which is the outer periphery of the adsorption surface 22. Further, the shape of the peripheral portion 84a corresponds to the size of the rectangular substrate w, and the adsorption of the fourth to seventh adsorption regions 80d to 80g is performed in accordance with the direction of the substrate W. Further, a plurality of protrusions 85 having heights equivalent to the heights of the partition walls 81a, 82a, and 83a are formed in the respective adsorption regions 8a, ..., 80g, and the partition walls 81a, 82a, 83a and the protrusions 85 are It abuts against the back surface of the substrate W. Further, the portions other than the partition walls 81a, 82a, 83a and the protrusions 85 are removed to form the respective adsorption regions 80a. . . , the lower part of 80g 86. Further, the processing of the partition walls 81a, 82a, 83a and the projections 85 may be cutting of an end mill or the like, or may be shot blasting. Further, in each of the adsorption regions 80a,. . . , the surface of each lower part 86 within 80g 152499. Doc 201126280, 87g. Further, vacuum suction is performed on the adsorption of 87 g, and a plurality of positive and negative pressure holes 87a are provided by the opening. . .  When the substrate W is from the positive and negative pressure holes 87a, . The space surrounded by the lower portions 86 of the respective adsorption regions 80a, ..., 80g, the partition walls 8a, 82a, 83a, the peripheral wall portion 84a, and the back surface of the substrate 成为 is a negative pressure. When the substrate W is unloaded, the substrate W is released from the atmosphere, and the atmosphere is released in the space or positive pressure is introduced from the positive and negative pressure holes 87a, ..., 87g. Further, when the substrate w is adsorbed, the deflection can be reduced by gradually proceeding from the inner second adsorption region 8〇a to the outside. Further, when the substrate is exposed, the vacuum suction may be performed by the positive and negative pressure holes 87a, ..., 87g, or the vacuum suction of each adsorption region may be released locally or collectively. get on. Further, a plurality of pin holes (not shown) are formed on the adsorption surface 22, and the pin holes are formed by the workpiece carrier (not shown) when the substrate W is transported to the processing chuck 21 so as to be self-adsorbing surface 22 A plurality of pins (not shown) that enter and exit can advance and retreat. Furthermore, since the adsorption surface 22 has substantially the same outer dimensions in each of the adjacent exposure device bodies 2, 3, 4, 5, the outermost peripheral walls 84a, ..., 84d are located adjacent to each other as shown in FIG. The same is true in the exposure apparatus bodies 2 to 5. Here, as shown in FIG. 1, the first partition walls 81a, ..., 81d, the second partition walls 82a, ..., 82d, and the third partition walls 83a, _ of the second to fourth adjacent exposure apparatus bodies 2 to 5 are provided. ·. And 83d are formed at positions different from each other. Therefore, when the first to fourth proximity exposure apparatus main bodies 2 to 5 are used for the exposure transfer of the fourth layer, the partition walls 81a, ... which are in contact with the back surface of the substrate w. , ~81d, 82a, ·. · The positions of '82d, 83a, ..., 83d are different. Figure 6 is the suction of the processing chuck 21 of the fourth adjacent exposure device body 5 152499. Doc •13- 201126280 The second and third partition walls 82a, ..., 82c, 83a of the VId portion of Fig. 1 and the third to third adjacent exposure penetrating bodies 2 to 4 when the substrate 22 is placed on the surface 22; . . . 83 (: the position at the position in contact with the substrate W! The VIa to VId portions are overlapped by a single chain line. If the above-described fourth to fourth adjacent exposure device bodies 2, ..., 5 are used When the substrate W performs the exposure transfer from the second layer to the fourth layer, the substrate is slightly deformed by the influence of the temperature change at the position of the partition wall, but the partition wall 81a, . . , ~81d, 82a,. . . The positions of 82d, 83a, ..., 83d are different from each of the four exposure device bodies 2, 5, and 5, so that it is not visually recognized as uneven exposure on the substrate W, and variation in exposure distribution can be suppressed. produce. Further, the position of the substrate W which is in contact with the peripheral walls 84a, ..., 8 is transferred to the outside of the pattern area of the substrate by the pattern exposure, so that the position of the peripheral wall of each of the exposure apparatus bodies 2, 3, 4, 5 is obtained. The same will not affect the exposure accuracy. The present invention is not limited to the embodiments described above, and may be appropriately modified without departing from the spirit and scope of the invention. In the above embodiment, the partition wall is formed by a continuous portion of a linear shape, and the projections are formed by a square shape, but may be changed into various shapes as shown in Figs. 7 and 8 . For example, as shown in FIGS. 7(a) to (h), the partition wall 90 may extend through the continuous portion 90a and the extending portion 90b extending in the direction orthogonal to the continuous portion on both sides of the continuous portion 9A. Composition. Thereby, the deflection of the non-contact portion of the substrate W in the vicinity of the partition wall 9A can be made small, and the gap 1 between the mask M and the substrate % can be made more uniform, so that variations in exposure unevenness or exposure distribution can be suppressed. 152499. Doc -14· 201126280 Specifically, as shown in FIGS. 7(4), (4) to (8), the partition wall 9〇 can also be configured by the continuation portion 90a and the extension portion (4) on both sides of the continuous portion 9Qa, and As shown in the figure, the extension portion 90b of the partition wall 9〇 may also be arranged to extend to an intermediate position between the protrusions 9i in the direction in which the continuous portion 9〇a of the partition wall 9〇 extends... FIG. 7(c) As shown, the continuous portion: the extension portion 9 on one side of the minute 90a may be set to extend toward the protrusion μ, and the extension portion 90b on the other side may extend toward the intermediate position between the protrusions 91. Further, as shown in Fig. 7 (4) and the figure 7 (g), the continuous portion 9Ga between the adjacent extending portions 9Gb in the direction in which the continuous portion_ extends is formed into an f-curve shape according to the shape of the end knife, and As shown in Fig. 7(f), the continuous partial cores may be connected in a zigzag shape instead of a straight line. Further, as shown in Fig. 7 (4), the circle 7 (4), and the circle 7 (4), the extension portion 9013 may be formed on the both sides of the continuous portion 9A, in such a manner as to extend from each other, or in the core (4), the extension portion 90b. The front end extends in such a manner as to constitute a projection 9丨. Further, as shown in Figs. 7(4) to 7(4), the interval between the projections in the vicinity of the recording partition wall 90 is made shorter than the interval between the projections located in the portion separated from the partition wall 9A", and the interval between the partition wall 90 and the adjacent projections 91. In the case of a larger case, there is a possibility that the deflection of the non-contact portion becomes large to cause uneven exposure, but as shown in Figs. 7(4) to 7(c), the interval between the protrusions 91 located near the partition wall % is shortened. The deflection of the non-contact portion can be reduced, thereby suppressing uneven exposure. Moreover, as shown in Fig. 8(a), the partition wall 9〇 can be separated from the disk remote green portion, the W door moving portion 90a by the continuous portion 9〇a, and on both sides of the continuous portion of the Luhai section. The rectangular portion 9 (four) extending in the direction orthogonal to the continuous portion is also formed as shown in Fig. 8(8) 152499. Doc •15.  As shown in Fig. 201126280 and Fig. 8(c), it consists of two or three consecutive parts. As described above, the partition wall is formed by using a plurality of continuous portions 90a to disperse the contact portion with the substrate W to be hardly affected by the temperature, whereby the deflection of the contact portion can be reduced. Further, as shown in Figs. 8(4) to 8(§), the partition wall 9〇 may also be continuously extended by the continuous portion 9〇a and the side of the money portion 9〇a or both sides along the continuous portion. The rectangular portion _, 9Ge or the wavy line portion is composed. That is, the partition wall 90 may be symmetrical with respect to the continuous portion or may be asymmetrical. Further, as shown in Fig. 8(h), the partition wall 9A may also arrange a plurality of rows such as a circular or square projection 90g so as to be buried in a gap between the adjacent projections 卯g in the direction in which the partition wall 9〇 is formed. Or, as shown in Fig. 8 (1), the interval between the projections 9〇i is narrowed to concentrate the discontinuous projections 9Gg and 9Gi, thereby isolating the adjacent adsorption regions. Further, the partition walls of the respective exposure apparatus main bodies may be in contact with each other without being completely overlapped with the back surface of the substrate, but may be partially overlapped and contacted. Further, the shape of the partition wall 9A can be used in combination as appropriate. Further, in the present embodiment, the configuration in which the adsorption surfaces of the adjacent exposure apparatus main bodies are different is employed. However, the width of the peripheral edge portion on the outer side of the image forming region may be wide, and the adsorption surfaces may be the same. The composition is bonded and the bonding position of the substrate is slightly offset in a plurality of adjacent exposure device bodies. Thereby, the partition wall is different in each exposure device body.  The position abuts against the back surface of the substrate, thereby suppressing occurrence of variations in exposure unevenness or exposure distribution. Furthermore, the width of the peripheral portion is designed to be wider than the maximum offset between the plurality of adjacent exposure device bodies. 152499. Doc -16 - 201126280 [Second Embodiment j Next] The exposure unit and the exposure method of the substrate of the second embodiment of the present invention will be described in detail based on Fig. 9 to circle 17. As shown in FIG. 9, the exposure unit 1 of the present invention comprises: a first adjacent exposure acoustic body 2 that exposes the first layer; a second adjacent exposure device body 3f that exposes the second layer; The exposure apparatus body 4 is configured to expose the third layer exposure 'and the fourth adjacent exposure apparatus body 5, which exposes the fourth layer. Further, the devices used in the pre-treatment and post-processing steps such as the coater, the pre-alignment, and the development, and the transfer device for transporting the substrates are omitted. Further, the first to fourth proximity exposure apparatus main bodies 2, 3, 4, and 5 may have different configurations in which the adsorption surfaces of the substrate holding portions described below are different. Therefore, only the first adjacent exposure apparatus main body 2 will be described in detail below. . As shown in FIG. 1A, the first proximity exposure apparatus body 2 includes: a mask holding portion that holds a mask Μ; a substrate holding portion (substrate stage) 2'' which holds a glass plate (exposed material) W; an illumination optical system 3. The illumination pattern is used for exposure of the light; the substrate holding portion moving mechanism 4 is configured to move the substrate holding portion in the collar axis, the Y-axis, and the Z-axis direction, and to perform tilt adjustment of the substrate holding portion 20; and the device substrate 50, which supports the mask holding portion 1 and the substrate holding portion moving mechanism 40. In addition, the glass substrate w (hereinafter, simply referred to as "substrate Wj" is disposed opposite to the light (four)", and the surface of the mask (opposite surface side of the mask) is exposed and transferred to cover the mask pattern drawn on the light. The photoresist is coated with fused silica and formed into a rectangular shape. For convenience of explanation, the illumination optical system 3 〇 is described, illumination optics 152499. Doc • 17- 201126280 The first 30 includes, for example, a high-pressure mercury lamp 3 i as a light source for ultraviolet irradiation 'concave mirror 32 ' which condenses light irradiated from the high-pressure mercury lamp 31, and two optical integrators 33, And the like is arrangably disposed near the focus of the concave mirror 32; the plane mirrors 35, 36 and the spherical mirror 37 are used to change the direction of the optical path; and the exposure control shutter 34 is disposed on the plane mirror 36 and the optical dry integrator 33. The opening and closing control is performed between the irradiation light paths. Further, 'in the illumination optical system pair, if the exposure exposure control shutter 34 is subjected to the opening control', the light irradiated from the high pressure mercury lamp 31 passes through the optical path L of Fig. 1 and is held as a parallel light pair for pattern exposure. The mask M of the cover holding portion 1 is further subjected to vertical irradiation of the surface of the substrate w held by the substrate holding portion 2A. Thereby, the mask pattern of the mask M is exposed and transferred onto the substrate W. As shown in FIG. 10 to FIG. 12, the mask holding portion 10 includes a mask holding portion base U' having a rectangular opening Ua formed at a central portion thereof: a mask holding frame 12 which is slidable on the X-axis and the γ-axis The opening portion 11a of the reticle holder base 1 is movably mounted in the θ direction; the chuck portion 4 is attached to the reticle holding frame 12, and the reticle holder is adsorbed and held; and the reticle position adjusting mechanism 16 is provided. The mask holding frame 12 and the chuck portion are moved in the x-axis, the γ-axis, and the 0-direction, and the position of the photomask held by the mask holding frame 12 is adjusted. The mask holding portion base 11 is supported by the support 51 that is erected on the apparatus base 5 and the shaft moving device 52 provided at the upper end of the support 51, and is movably supported in the two-axis direction, and is disposed on the substrate. Above the holding portion 2〇. The two-axis moving device 52 includes, for example, an electric actuator including a motor and a ball screw, or an air compressor cylinder, and performs a simple upper and lower operation, thereby making the reticle 152499. Doc -18· 201126280 The holding unit 10 is raised and lowered to a predetermined position. Further, the z-axis moving device 52 is used when the mask is replaced or the workpiece chuck 21 is cleaned or the like. The reticle position adjusting mechanism 16 includes: one cylindrical direction driving device I6y mounted on one side in the X-axis direction of the reticle holding frame 12; and two X-axis direction driving devices 16x' which are mounted on the reticle In the reticle position adjustment mechanism 16, the reticle position adjustment mechanism 16 is driven to move the reticle holding frame 12 in the γ-axis direction, and the same is The two X-axis direction driving devices 16 are driven to move the mask holding frame 12 in the z-axis direction. Further, the shutter holding frame 12 is moved in the x direction (rotation around the two axes) by driving either of the two X-axis direction driving devices 16A. Further, as shown in FIG. 12, a gap sensor 17 for measuring a gap between the opposing faces of the mask Μ and the substrate W is provided on the upper surface of the mask holding base base u, and a gap sensor 17 for confirming and holding on the center disk portion 14 is provided. The photomask of the reticle river is positioned to align the camera 18. The gap sensor 17 and the aligning alignment camera 18 for the reticle are held in the yoke and γ-axis directions (4) and (4) via the moving mechanism 19, and are disposed in the reticle holding frame 12. Further, as shown in Fig. 12, at the upper surface of the reticle holding portion base ", at both ends of the (4) direction of the opening q11a of the reticle holding portion base U, the ends of the light singer are provided as needed. The shielding hole (4) for shielding. The shielding aperture 38 is movable in the x-axis direction by a shielding aperture driving mechanism 39 including a motor, a ball screw 'and a linear guide, and the shielding area of both ends of the mask μ is adjusted. Furthermore, the shadow aperture % can be set not only in the (four) portion of the tree of the opening Ua, but also in the opening I52499. Doc -19- 201126280 Both ends of the 11-axis in the Y-axis direction. As shown in FIGS. 10 and 11, the substrate holding portion 2 is disposed on the substrate holding portion moving mechanism 40 and includes a workpiece chuck 21 having a surface on the upper surface of the workpiece chuck 2 for holding the substrate W on the substrate. The adsorption surface 22 of the holding portion 2 is closed. Further, the workpiece chuck 21 holds the substrate W by vacuum suction. As shown in FIGS. 10 and 11, the substrate holding portion moving mechanism 4G includes a Y-axis feeding mechanism 41' which moves the substrate holding portion 2 in the Y-axis direction, and an X-axis feeding mechanism 42' which causes the substrate holding portion. The yaw axis direction is moved, and the tilt adjustment mechanism 43 performs tilt adjustment of the base (4) holding portion 2 (), and causes the substrate holding portion 20 to be slightly moved in the Z drawing direction. The Y-axis feed mechanism 41 includes a pair of linear guides 44 that are disposed on the upper surface of the device base 5〇 in the Y-axis direction, and a γ-axis platform 45 that is movable in the x-axis direction by the linear guides 44. Supported; and a gamma axis feed drive 46 that moves the y-axis stage 45 in the ¥ axis direction. Moreover, the γ-axis is driven by the motor 46c of the driving device 46, and the ball screw shaft yang is rotated, whereby the Y-axis flat σ 45 is moved along with the ball screw nut 46a and along the guide rail 44a of the linear guide 44. The substrate is held (4) to move in the γ-axis direction. For the linear guide 47, which is disposed along the X-axis and the 'X-axis feed mechanism 42 includes the direction on the upper surface of the γ-axis platform 45; the y-axis platform 48 is available in the y-axis direction by the linear guide 47 The support is movably; and the X-heart drive device 49 moves the yoke platform 48 in the direction of the sense axis. Further, the motor 49e of the recording drive unit 49 is driven to rotate the ball screw shaft, thereby moving the X-axis table 48 together with the ball screw nut _ and the guide guide 47a of the linear guide 47 (not shown). And the substrate holding portion 2·χ axis 152499. Doc -20- 201126280 Move to the side. The Z-tilt adjustment mechanism 43 includes a motor 43a that is disposed on the cymbal platform μ, the ball screw shaft 43b' is rotationally driven by the motor 43a, and a wedge nut 43c that is formed in a wedge shape and screwed to the ball screw The shaft 43b and the wedge portion 43d are protruded from the lower surface of the substrate holding portion 2b in a wedge shape and are engaged with the inclined surface of the wedge nut 43c. Further, in the present embodiment, the z-tilt adjustment mechanism 43 is provided on one side of the x-axis stage 48 in the x-axis direction (the front side of FIG. 9), and two sets are provided on the other side (Fig. On the back side, referring to Fig. 丨丨), three units are provided in total, and each is independently driven and controlled. Further, the number of settings of the z•tilt adjustment mechanism 43 is arbitrary. Further, the 'Z-tilt adjustment mechanism 43 rotatively drives the ball screw shaft 43b by the motor 43a, whereby the wedge nut 43 is horizontally moved in the z-axis direction, and the horizontal movement movement is performed by the wedge nut 43c and the wedge portion The bevel of 43d is switched to the high-precision upper and lower fine motion, so that the wedge portion 43d is slightly moved in the Z direction. Therefore, by driving the three Z-tilt adjustment mechanisms 43 by only the same amount, the substrate holding portion 20 can be made to Z. In the axial direction, the tilting of the substrate holding portion 2 is performed by independently driving the three Z-tilt adjustment mechanisms 43. Thereby, the position of the Z axis and the tilt direction of the substrate holding portion 20 can be performed. The mask Μ and the substrate W are opposed to each other at a predetermined interval in parallel with each other. Further, as shown in FIGS. 10 and 11 , the position of the position of the substrate holding unit 20 is detected in the first proximity exposure apparatus main body 2 . The laser distance measuring device 60 is a measuring device. The laser distance measuring device 60 measures the moving distance of the substrate holding portion 20 generated when the substrate holding portion moving mechanism 40 is driven. The laser ranging device 60 includes: X-axis mirror 64 Which is fixed to a stay (not 152499. Doc -21 - 201126280 is disposed along the side surface of the substrate holding portion 20 in the x-axis direction; the γ-axis mirror 65' is fixed to the side of the y-axis direction of the substrate holding portion 2 in the y-axis direction of the substrate holding portion 2 The X-axis range finder (rangometer) 61 and the deflection finder (a range finder are disposed at the X-axis end of the device base 50 to illuminate the X-rays to the X-ray) The shaft mirror 64 receives the laser light reflected by the x-axis mirror 64 to measure the position of the substrate holding portion 2; and one x-axis distance meter (rangometer) 63 is disposed in the device The end portion of the base 50 in the x-axis direction irradiates the laser beam to the x-axis mirror 65 and receives the laser light ' reflected by the y-axis mirror 65 to measure the position of the substrate holding portion 2'. The distance device 60 is irradiated to the X-axis mirror 64 and the X-axis mirror 64 from the X-axis range finder 61, the deflection finder 62, and the x-axis range finder 63, and the X-axis mirror 64 is used. The x-axis is reflected by the mirror 65, and the position of the substrate holding portion 20 in the X-axis and γ-axis directions is measured with high precision. Further, the positional data in the X-axis direction is measured by the X-axis. The position of the substrate holding unit 2 is measured by the deflection measuring device 62. Further, the position of the substrate holding portion 2 is referred to the position in the X pumping direction and the position in the γ pumping direction measured by the laser distance measuring device 60. And the position in the Q direction, which is calculated by appropriate correction. Fig. 13 is a plan view schematically showing the adsorption surface of the workpiece chuck 21 of the first exposure apparatus body 2, on the adsorption surface 22 of the workpiece chuck 21. 13 independent adsorption regions, that is, first to thirteen adsorption regions 8〇〇a'..., 800m are formed. The first adsorption region 800a is isolated by the first partition wall 81〇a of the quadrangular shape. The second to ninth adsorption regions 800b to 800i are sequentially adjacent to the first adsorption region 800a and are separated by the partition walls 810b to 810i, and are arranged in a matrix. The second adsorption region 152499 adjacent to the partition wall 810a of the first adsorption region 800a. . Doc -22- 201126280 The partition wall 810b of 800b is a wall that is common to its abutting portion. Further, the partition wall 810d of the fourth adsorption region 8?d adjacent to the partition wall 810a of the j-th adsorption region 800a is also a wall which is common to the adjacent portions. Further, the other suction regions are also provided in the same manner. Around the first adsorption region 800a to the ninth adsorption region 8〇〇i, the first 〇 surrounding adsorption region 800j to the thirteenth surrounding adsorption region 〇〇m are isolated by the partition walls 810j to 810m, and are formed in a rectangular shape. . a partition wall 81 of the seventh adsorption region 800g adjacent to the partition wall 810j of the adsorption region 800j around the first crucible (^, the partition wall 81011 of the eighth adsorption region 80011, and the ninth adsorption region 80 (Pwj off the wall 81 0 i is a wall in which the adjacent portions are common. The other surrounding adsorption regions are also provided in the same manner. Further, the first surrounding adsorption region 800j to the thirteenth surrounding adsorption region 800m correspond to the size of the rectangular substrate w, and Fig. 14 (A) to (D) are enlarged views of respective portions of the A portion, the B portion, the C portion, and the D portion of Fig. 13. The respective adsorption regions 800a, ..., 800m are formed. There are a plurality of protrusions 85 having a height equivalent to the height of each of the partition walls 810a, ..., 810m, and the partition walls 810a, ..., 810m and the protrusions 85 can abut against the back surface of the substrate W. Further, each partition wall 810a is removed. The knives other than the 810m and the protrusions 85 are the lower portions 86 of the respective adsorption regions 800a, ..., 800g. Further, the processing of the partition walls 810a, ..., 810m and the protrusions 85 may be an end mill or the like. Cutting can also be shot peening. Further, in each adsorption zone 8〇〇a,...,800m A plurality of positive and negative pressure holes 87 are opened on the surface of each of the lower portions 86. Further, when the substrate w is adsorbed, vacuum suction is performed from the positive and negative pressure holes 87, whereby each adsorption region is 152499. Doc •23· 201126280 800a, ..., 800m each lower part 86, each partition wall 810a, ..., 81 〇m and surrounding adsorption area 800j,. ·. The space surrounded by the back surface of 800 m and the substrate W becomes a negative pressure. When the substrate W is unloaded, in order to facilitate the detachment of the substrate W, the atmosphere is released in the space or the positive pressure is introduced from the positive and negative pressure holes 87. Fig. 15(B) shows a substrate W (solid line) placed on the adsorption surface 22 (-dotted chain line) of the workpiece chuck 21 of the first proximity exposure apparatus main body 2 shown in Fig. 15(A). Further, the oblique line portion of the substrate W of Fig. 15(B) indicates the exposure intervals Sel to Se4. In this case, the substrate w is used in a so-called vertical direction, and the first adsorption region 8〇〇a to the ninth adsorption region 8〇〇丨, the tenth surrounding adsorption region 800j, and the twelfth periphery are used as the adsorption region. Adsorption zone 8001. These adsorption zones are controlled by the adsorption control unit 70a (see Fig. 10) provided in the control unit 70 (see Fig. 1A). The adsorption control unit 7A controls the adsorption region corresponding to the irradiation region of the exposure light independently of the other adsorption regions. For example, the adsorption region corresponding to the exposure light irradiation region can be controlled to be non-adsorbed, and the adsorption region corresponding to the exposure light irradiation region can be further subjected to pressure reduction control than the other adsorption regions. The adhesion control of the substrate w at the time of exposure of the sections Se1 to Se4 of the substrate W will be described with reference to Figs. 16(A) to 16(D). First, as shown in FIG. 16(A), the exposure light is irradiated to the section sei, whereby the section Sel is exposed 'but the first adsorption region 800a and the second adsorption at the time immediately below the section Sel (exposure light irradiation region) The region 8〇〇b, the fourth adsorption region 8〇〇d, and the fifth adsorption region 800e are controlled to be in a non-adsorption state. On the other hand, the third absorption region 800c, the sixth adsorption region 800f, the seventh adsorption region 800g, and the eighth absorption 152499 of the 1-line portion Q1 other than the interval S e 1 (exposure light irradiation region) are shown. Doc -24· 201126280 The attached area 800h and the ninth adsorption area 800i are controlled to be in an adsorption state. In this case, the tenth surrounding adsorption region 8〇〇j and the twelfth surrounding adsorption region 8001 may or may not be adsorbed. As described above, since the adsorption of the adsorption region directly under the light irradiation region is not performed, deformation of the substrate caused by the adsorption can be avoided. Then, the substrate holding portion 20 is stepwise moved in the X-axis direction by the substrate holding portion moving mechanism 4, and as shown in FIG. 16(B), the exposure light is irradiated to the section Se2, whereby the section Se2 is exposed, but At this time, the third adsorption region 800c, the second adsorption region 800b, the sixth adsorption region 800f, and the fifth adsorption region 8〇〇e directly below the interval se2 (exposure light irradiation region) are controlled to be in a non-adsorption state. On the other hand, the first adsorption region 800a, the fourth adsorption region 800d, the seventh adsorption region 800g, the eighth adsorption region 800h, and the ninth adsorption region 800i of the 1-line portion Q2 other than the interval Se2 (exposure light irradiation region) are indicated. Controlled to an adsorption state. Further, the switching of the adsorption region is performed after the end of the exposure of the interval Se1 and before the stepwise movement to the interval Se2. By this means, it is possible to prevent the substrate W from shifting during the step. Then, the substrate holding portion 2 is stepped and moved in the z-axis direction by the substrate holding portion moving mechanism 4, and as shown in Fig. 16 ((:), the exposure light is irradiated to the interval Se3, whereby the interval Se3 is exposed. However, the ninth adsorption region 8〇〇丨, the eighth adsorption region g〇〇h, the sixth adsorption region 800f', and the fifth adsorption region 80〇6 directly under the interval Se3 (exposure light irradiation region) are controlled. Conversely, the seventh adsorption region 800g of the word line portion Q3, the fourth adsorption region 800d, the second and the attachment region 152499 are shown in addition to the interval Se3 (exposure light irradiation region). Doc - 25 - 201126280 800a, the second adsorption region 800b, and the twelfth adsorption region 8001 are controlled to be in an absorbing state. Next, 'the substrate holding portion 20 is stepwise moved in the X-axis direction by the substrate holding portion moving mechanism 40, and as shown in FIG. 16(D), the exposure light is irradiated to the interval Se4, whereby the 'section Se4 is exposed'. The seventh adsorption region 800g, the eighth adsorption region 800h, the fourth adsorption region 800d, and the fifth adsorption region 800e immediately below the time interval Se4 (exposure light irradiation region) are controlled to be in a non-adsorption state. On the other hand, the first adsorption region 800a, the second adsorption region 800b, the third adsorption region 800c, the sixth adsorption region 800f, and the ninth adsorption region of the 1-line portion Q4 other than the interval Se4 (exposure light irradiation region) are shown. The 800i is controlled to the adsorption state. Further, in the above embodiment, the adsorption region has been switched before the stepping, but the adsorption region can also be switched during the stepping. The reason for this is that it is only necessary to have an adsorption region which is always in an adsorption state during the stepping, and further, it is sufficient to adsorb any of the adsorption regions other than the exposure light irradiation region. For example, when the step Sel is stepped from the section Sel to the section Se2, the seventh adsorption zone 800g, the eighth adsorption zone 800h, and the ninth adsorption zone 8〇〇i are always in the adsorption state, and thus become the third adsorption zone 800c'. The sixth adsorption region 800f switches the adsorption control to the first adsorption region 800a and the fourth adsorption region 800d. Further, in Figs. 17(A) and 17(B), one substrate W is exposed to four sections (so-called four faces). However, the present invention is not limited thereto, and can be applied to all incidental surfaces. For example, Fig. 16(A) shows that the substrate w (the substrate which is long in the lateral direction) with six faces is placed transversely, and the adsorption system at the time of exposure is performed in the same manner as in the above embodiment. In this case, the 11th surrounding adsorption area 8〇〇k and the 13th circumference 152499 are used. Doc •26· 201126280 The adsorption area is 800m. Further, Fig. 17(B) is a case in which a substrate w (a substrate which is long in the longitudinal direction) with six faces is placed, and the adsorption system at the time of exposure is carried out in the same manner as in the above embodiment. In this case, the adsorption zone rib (7) around the first weir and the 12th adsorption zone 8〇〇1 are used. Further, a plurality of pin holes (not shown) are formed in the adsorption surface 22. These pin holes are used to transfer the substrate W to the workpiece chuck 21 by a workpiece carrier (not shown) to cause the self-adsorption surface 22 A plurality of pins (not shown) that enter and exit can advance and retreat. When the first to fourth exposure exposures are performed on the substrate W by using the second to fourth proximity exposure apparatus bodies 2, ..., 5 configured as described above, the position of the partition wall is affected by the temperature change. Although the substrate is slightly deformed, there is no deformation of the substrate due to the adsorption of the substrate. Therefore, it is not visually recognized as uneven exposure on the substrate %, and variation in exposure distribution can be suppressed. It is to be noted that the present invention is not limited to the embodiments described above, and may be appropriately modified without departing from the spirit and scope of the invention. In the above embodiment, the partition walls 81 0a to 8 10i of the first to ninth adsorption regions 800a to 800i are formed in a non-linear wave shape, and the surrounding partition walls 810j, ... 810m is formed by a continuous portion of a linear shape, but the partition walls 81 〇a to 8 1 Oi of the second to ninth adsorption regions 800a to 800i may also be formed by straight lines, and the surrounding adsorption regions 8〇〇, ..., The surrounding partition walls 810j, ~, 810m of 800 m may also be formed by a continuous portion that is not a straight line, that is, a wave shape. Further, the projections are formed by a circular shape, but they may be square, and a variety of shapes can be used. This case is based on the application for this patent on November 25, 2009 (Japanese Patent Application No. 2009-267918), and the application for this week, January 28, 2010. Doc • 27· 201126280, the entire disclosure of which is incorporated herein by reference. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing an exposure unit of an i-th embodiment of the present invention; FIG. 2 is a partially exploded perspective view showing a proximity exposure apparatus body applied to the exposure unit of FIG. 1. FIG. Figure 2 is a front elevational view of the vicinity of the exposure apparatus body; Figure 4 is an enlarged perspective view of the mask holding portion shown in Figure 2; Figure 5 (a) is a front view of the substrate holding portion shown in Figure 1, (b) Fig. 6 is an enlarged view showing the Via to VId portions of the substrate holding portion of each of the adjacent exposure device bodies of Fig. 7; Fig. 7 (a) to (h) show the protrusions. And FIG. 8(a) to (i) are diagrams showing various modifications of the partition wall; and FIG. 9 is a schematic view showing the exposure unit of the second embodiment of the present invention; Figure 11 is a partially exploded perspective view showing the proximity exposure device applied to the exposure unit of Figure 9; Figure 11 is a front view of the proximity exposure device shown in Figure 10; Figure 12 is an enlarged view of the mask holding portion shown in Figure 1 Figure 13 is a front view of the substrate holding portion shown in Figure 9; Figure 14 (A) is a portion of Figure 13 Figure (b) is an enlarged view of a portion B of Figure 13, (C) is an enlarged view of a portion C of Figure 13 (D) is an enlarged view of a portion d of Figure 13; Figure 15 (A) ~ (B) is attached A front view of the substrate holding portion shown in FIG. 9 is a diagram of a substrate; 152499. Doc -28- 201126280 The suction of the substrate during moving and movingFig. 16(A) to (D) are diagrams showing the state in which the substrate has been stepped; and Fig. Α(Α)~(Β) are shown in Fig. 9. A diagram showing states of different types of substrates in the front view of the & / heart storm board holding portion. [Main component symbol description] 1 Exposure unit 2 First adjacent exposure device body 3 Second adjacent exposure device body 4 Third adjacent exposure device body 5 Fourth adjacent exposure device body 10 Photoreceptor holding portion 11 Photoreceptor holder base 11a Opening Part 12 Mask holding frame 12b Opening 14 Clip portion 16 Mask position adjusting mechanism 1 6 X-axis direction driving device 16y Y-axis direction driving device 17 Gap sensor 18 Photomask alignment camera 19 Movement mechanism 20 Substrate retention Part 21 workpiece chuck 152499. Doc -29- 201126280 22 Adsorption surface 30 Illumination optical system 31 High pressure mercury lamp 32 Concave mirror 33 Optical integrator 34 Exposure control shutter 35, 36 Planar mirror 37 Spherical mirror 38 Shield aperture 39 Shield aperture drive mechanism 40 Substrate holder moving mechanism 41 Y-axis Feed mechanism 42 X-axis feed mechanism 43 Z-tilt adjustment mechanism 43a ' 46c ' 49c Motor 43b ' 46b , 49b Ball screw shaft 43 c Wedge nut 43d Wedge 44 ' 47 Linear guide 44a, 47a Guide rail 45 Y-axis platform 46 Y-axis feed drive unit 46a ball screw nut 48 X-axis platform 152499. Doc • 30- 201126280 49 X-axis feed drive unit 50 Unit base 51 Pillar 52 Z-axis movement unit 60 Laser distance measuring unit 61 X-axis range finder 62 Deflection measuring unit 63 Y-axis range finder 64 X-axis mirror 65 Y-axis mirror 70 control unit 70a adsorption control unit 71 strut 80a first adsorption region 80b second adsorption region 80c third adsorption region 80d fourth adsorption region 80e fifth adsorption region 80f sixth adsorption region 8〇g seventh adsorption Areas 81a, 81b, 81c, 81d first partition walls 82a, 82b, 82c, 82d second partition walls 83a, 83b, 83c, 83d third partition walls 84a, 84b, • 84c, 84d peripheral wall 152499. Doc •31 - 201126280 85 , 90g , 90i , 91 protrusion 86 lower part 87 , 87a , 87b , 87c , positive and negative pressure hole 87d , 87e , 87f , 87g 90 away from wall 90a continuation part 90b extension part 90c , 90d , 90e rectangle Part 90f wavy line portion 800a first adsorption region 800b second adsorption region 800c third adsorption region 800d fourth adsorption region 800e fifth adsorption region 800f sixth adsorption region 800g seventh adsorption region 800h eighth adsorption region 800i ninth adsorption region BOOj 10th adsorption zone 800k 11th adsorption zone 8001 12th adsorption zone 800m 13th adsorption zone 810a 1st partition wall 810b 2nd partition wall -32- 152499. Doc 201126280 810c 3rd partition wall 810d 4th partition wall 810e 5th partition wall 810f 6th partition wall 81〇g 7th partition wall 810h 8th partition wall 810i 9th partition wall 810j 10th surrounding partition wall 810k 11th circumference isolation Wall 8101 12th surrounding partition wall 810m 13th surrounding partition wall L Optical path M Photomask Q1, Q2, Q3, Q4 L word line portion Se1, Se2, Se3, Se4 Section V, Via, VIb, Vic, VId Part W Glass substrate (exposed material) X, Y, Z direction 33- 152499. Doc

Claims (1)

201126280 七、申請專利範圍： 1. 一種曝光單元，其特徵在於，其係將複數個光罩之圖案 依次曝光轉印至基板者，且上述曝光單元包括藉由照射 上述曝光用光而將上述光罩之圖案曝光轉印至上述基板 上之複數個曝光裝置本體，該等複數個曝光裝置本體包 括： 光罩保持部，其保持具有上述圖案之光罩； 基板保持部’其具有吸附並保持上述基板之吸附面； 以及 照射部，其照射曝光用光； 於上述基板保持部之吸附面上設置： 用於將相鄰之吸附區域隔離而形成且可抵接於上述基 板之背面之隔離壁，及 於上述各吸附區域中可抵接於上述基板之背面之複數 個突起， 上述複數個曝光裝置本體之各基板保持部之吸附面具 有大致相同之外形尺寸，並且，上述各基板保持部之隔 離壁於每個上述曝光裝置本體中形成於不同位置。 2. 如請求項1之曝光單元，其中 於上述基板保持部之吸附面上，設置有控制使上述各 吸附區域成為吸附或非吸附之吸附控制部，且 上述吸附控制部對於與上述曝光用光之照射區域對應 之吸附區域獨立於其他吸附區域而進行控制。 3. 如請求項2之曝光單元，其中 152499.doc 201126280 上述吸附控制部係以使對應於上述照射區域之上述吸 附區域成為非吸附之方式進行控制。 4. 如請求項2之曝光單元，其中 上述吸附控制部係控制使對應於上述曝光用光之照射 區域之吸附區域較其他吸附區域為減壓。 5. —種曝光方法，其特徵在於：其係使用複數個曝光裝置 本體將上述各光罩之圖案依次曝光於上述基板的基板之 曝光方法，該等複數個曝光裝置本體包括保持具有圖案 之光罩之光罩保持部、具有吸附且保持基板之吸附面之 基板保持部、及照射曝光用光之照射部，且藉由照射上 述曝光用光而將上述光罩之圖案曝光轉印至上述基板 上，且上述曝光方法包括如下步驟： 以使將上述吸附面之相鄰之吸附區域隔離的隔離壁於 每個上述曝光裝置本體中之不同位置與上述基板之背面 抵接之方式’藉由上述複數個曝光裝置本體依次曝光上 述基板。 6.如請求項5之曝光方法，其中 與上述曝光用光之照射區域對應的吸附區域係獨立於 其他吸附區域而予以控制。 152499.doc201126280 VII. Patent application scope: 1. An exposure unit, which is characterized in that a pattern of a plurality of reticle is sequentially exposed and transferred to a substrate, and the exposure unit includes the light by illuminating the exposure light. The pattern of the cover is exposed to a plurality of exposure device bodies transferred onto the substrate, and the plurality of exposure device bodies include: a mask holding portion that holds the photomask having the pattern; and a substrate holding portion that has adsorption and retention An adsorption surface of the substrate; and an irradiation portion that irradiates the light for exposure; and an adsorption surface formed on the adsorption surface of the substrate holding portion for isolating the adjacent adsorption region and abutting against the back surface of the substrate, And a plurality of protrusions that can abut against the back surface of the substrate in each of the adsorption regions, wherein the adsorption surfaces of the substrate holding portions of the plurality of exposure device bodies have substantially the same outer dimensions, and the isolation of the substrate holding portions The walls are formed at different positions in each of the above-described exposure apparatus bodies. 2. The exposure unit according to claim 1, wherein an adsorption control unit that controls adsorption or non-adsorption of each of the adsorption regions is provided on an adsorption surface of the substrate holding portion, and the adsorption control unit is configured to emit light for the exposure The adsorption region corresponding to the irradiation region is controlled independently of the other adsorption regions. 3. The exposure unit of claim 2, wherein 152499.doc 201126280 the adsorption control unit controls the adsorption region corresponding to the irradiation region to be non-adsorbing. 4. The exposure unit according to claim 2, wherein the adsorption control unit controls the adsorption region corresponding to the irradiation region of the exposure light to be decompressed from the other adsorption regions. 5. An exposure method, characterized in that it is a method for exposing a pattern of the reticle to a substrate of the substrate by using a plurality of exposure device bodies, the plurality of exposure device bodies comprising light having a pattern a mask holding portion, a substrate holding portion for adsorbing and holding the adsorption surface of the substrate, and an irradiation portion for irradiating the exposure light, and exposing the pattern of the mask to the substrate by irradiating the exposure light The above exposure method includes the steps of: abutting the partition wall separating the adjacent adsorption regions of the adsorption surface from the back surface of the substrate at different positions in each of the exposure device bodies A plurality of exposure device bodies sequentially expose the substrate. 6. The exposure method according to claim 5, wherein the adsorption region corresponding to the irradiation region of the exposure light is controlled independently of the other adsorption regions. 152499.doc
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