JPH07167998A - Target for laser plasma x-ray source - Google Patents

Target for laser plasma x-ray source

Info

Publication number
JPH07167998A
JPH07167998A JP5315446A JP31544693A JPH07167998A JP H07167998 A JPH07167998 A JP H07167998A JP 5315446 A JP5315446 A JP 5315446A JP 31544693 A JP31544693 A JP 31544693A JP H07167998 A JPH07167998 A JP H07167998A
Authority
JP
Japan
Prior art keywords
target
formed
ray source
target material
material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5315446A
Other languages
Japanese (ja)
Inventor
Hisao Fujisaki
Hiroyuki Kondo
久雄 藤崎
洋行 近藤
Original Assignee
Nikon Corp
株式会社ニコン
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp, 株式会社ニコン filed Critical Nikon Corp
Priority to JP5315446A priority Critical patent/JPH07167998A/en
Publication of JPH07167998A publication Critical patent/JPH07167998A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE:To enable continuous use for many hours with generated X-rays being in a wide range from a short wavelength area to a long wavelength area by using material, formed of an element of specific atomic weight, as a target, and forming the target material in the layer state on a windable base by a vacuum thin film forming method. CONSTITUTION:Target material formed of an element of 150 or more in atomic weight is formed in the layer state on a windable base by a vacuum thin film forming method. Tungsten, lead, tantalum, or the like is desirable as the target material. It is also desirable that a fusing point is 2000 deg.C or higher. Tape like polyethylene, polypropylene, aluminium, copper or the like is desirable as the windable base.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】本発明は、X線顕微鏡、X線露光装置、X線分析装置等のX線装置に用いられるレーザープラズマX線源用標的に関する。 The present invention relates, X-ray microscope, X-ray exposure apparatus, and a laser plasma target X-ray source for use in X-ray apparatus, such as X-ray analyzer.

【0002】 [0002]

【従来の技術】減圧された装置内にあるレーザープラズマX線源用標的にレーザーを照射すると、X線を放出するプラズマが発生する。 When BACKGROUND ART irradiating laser to the target for laser plasma X-ray source in a pressure-reduced in the apparatus, a plasma that emits the X-rays are generated. 従来、レーザープラズマX線源用標的の材料には、銅、鉄、等の原子量の小さい材料が用いられてきた。 Conventionally, the material of the laser plasma X-ray source for the target, copper, iron, small material atomic weight equal have been used.

【0003】 [0003]

【発明が解決しようとする課題】従来の銅や鉄等の標的材料は、材料元素の原子量が小さいので、発生するX線のスペクトルはバンド構造を示す。 Target material of the invention Problems to be Solved such as a conventional copper or iron, since the atomic weight of the material elements is small, the spectrum of the X-ray generated shows the band structure. そのため、特定波長域のみのX線を使用するときには、問題とならないが、 Therefore, when using the X-ray of a specific wavelength range only, but not a problem,
短波長から長波長に渡って(例えば、1nm程度から数十nmまで)X線波長を走査しながら使用すると、X線強度が波長に依存して大きく変化するので、X線源として適当でないという問題点がある。 From the short wavelength over a long wavelength (e.g., several to tens of nm from about 1 nm) Using while scanning the X-ray wavelengths, that since the X-ray intensity varies greatly depending on the wavelength, not suitable as X-ray source there is a problem.

【0004】本発明の目的は、かかる問題点を解決し、 [0004] It is an object of the present invention is to solve the above problems,
発生するX線が短波長域から長波長域まで広範囲に渡って連続的であり、またX線強度の波長依存性が小さくて連続スペクトルに近く、さらに長時間連続使用できるレーザープラズマX線源用標的を提供することにある。 And X-ray generated is continuous over a wide range from a short wavelength region to a long wavelength range, also close to the continuous spectrum is small wavelength dependence of the X-ray intensity, laser plasma X-ray source can be further prolonged continuous use It is to provide a target.

【0005】 [0005]

【課題を解決するための手段】そのため、本発明は第一に「レーザーを照射すると、プラズマを発生してX線を放出するレーザープラズマX線源用標的において、前記標的は、巻き取り可能な基板上に、原子量150以上の元素からなる材料を真空薄膜形成法により層状に形成してなることを特徴とするレーザープラズマX線源用標的(請求項1)」を提供する。 A solution for the] Therefore, the present invention irradiates the "laser Firstly, in the laser plasma X-ray source for the target to emit X-rays by generating a plasma, the targets, a rollable on a substrate, a target laser plasma X-ray source material consisting of atomic weight of 150 or more elements, characterized by comprising forming a layer by a vacuum thin film forming method (claim 1) "provides.

【0006】また、本発明は第二に「前記材料の融点が2000°C以上であることを特徴とする請求項1記載のレーザープラズマX線源用標的(請求項2)」 を提供する。 Further, the present invention provides a "laser plasma X-ray source for the target according to claim 1, wherein the melting point of the material is 2000 ° C or higher (claim 2)" in the second.

【0007】 [0007]

【作用】本発明では、原子量150以上の元素からなる材料を標的に使用しているので、放出されるX線の波長域は、短波長から長波長にまで渡り(例えば、1nm程度から数十nmまで)、またX線強度の波長依存性が小さい。 According to the present invention, since a material consisting atomic weight of 150 or more elements are used for targeted, the wavelength range of X-rays emitted spans from the short wavelength to the long wavelength (e.g., several from about 1nm ten nm to), also a small wavelength dependence of the X-ray intensity. さらに、標的材料を巻き取り可能な基板上に、真空薄膜形成法により層状に形成したので、標的を巻き取ることができる。 Furthermore, on the rollable substrate target material, since in layers by a vacuum thin film forming method, it is possible to wind the target. そのため、レーザーが照射される標的部分を巻き取りにより変更できるので、標的を巻き取りながら長時間連続使用することができる。 Therefore, it is possible to change the winding of the targeting moiety laser is irradiated, it can be long-term continuous use while winding the target.

【0008】標的材料としては、例えば、タングステン、鉛、タンタル、金等が好ましい。 [0008] As the target material, such as tungsten, lead, tantalum, gold and the like are preferable. また、巻き取り可能な基板としては、例えば、テープ状の、ポリエチレン、ポリプロピレン、ポリイミド、アルミニウム、銅、 As the rollable substrates, for example, tape-like, polyethylene, polypropylene, polyimide, aluminum, copper,
鉄等が好ましい。 Iron and the like are preferable. 特に、耐熱性の良いテープが好ましい。 In particular, good heat resistance tape is preferred. 標的材料は、前記巻き取り可能な基板上に、真空薄膜形成法により層状に形成されるので、標的材料単体では、巻き取り可能な形状(例えば、テープ状)にできないような標的材料も使用できる。 Target material, the winding can be on the substrate, because it is formed into a layer by a vacuum thin film forming method, the target material alone, rollable shapes (e.g., a tape-like) may also be used a target material can not be in . また、標的材料は層状に形成されるので、厚さが比較的薄い。 Further, since the target material is formed in layers, it is relatively thin. そのため、X線を放出するプラズマからの飛散粒子の量を低減できるので、X線光学素子等の飛散粒子による損傷を抑制できる。 Therefore, it is possible to reduce the amount of scattering particles from the plasma that emits X-rays can be prevented from being damaged due to scattering particles, such as X-ray optical element.

【0009】ところで、標的材料の融点が2000°C [0009] By the way, the melting point of the target material is 2000 ° C
以上であることが好ましい。 Or more at a wavelength of 550 nm. X線を放出するプラズマからの飛散粒子の量を低減でき、X線光学素子等の飛散粒子による損傷を抑制できるからである。 Can reduce the amount of scattering particles from the plasma that emits X-ray, it is because it prevented from being damaged due to scattering particles, such as X-ray optical element. 以下、実施例により本発明を具体的に説明するが、本発明はこれに限定されるものではない。 Hereinafter, a detailed explanation of the present invention through examples, the present invention is not limited thereto.

【0010】 [0010]

【実施例】図1は、本実施例のレーザープラズマX線源用標的を示す斜視図である。 DETAILED DESCRIPTION FIG. 1 is a perspective view showing a laser plasma X-ray source for the target of the present embodiment. ポリイミドテープ上に真空薄膜形成法により形成した、タングステン、鉛、又はタンタルからなる厚さ数μmから数十μmのテープ状の標的102 は、当初リール106 に巻き取られている。 Was formed by vacuum thin film forming method on a polyimide tape, tungsten, lead, or a target 102 of several tens of μm of the tape from a thickness of several μm made of tantalum is initially wound on the reel 106.

【0011】リール106 ,107には、モーターがそれぞれ連結されており(図示せず) 、これらのモーターの回転により、テープ状の標的102 は、リール106 からリール [0011] reels 106, 107, motor (not shown) connected to and respectively, by the rotation of these motors, the tape-shaped target 102, reel from the reel 106
107に巻き取られる。 It is taken up in 107. 巻き取りの途中で、パルスレーザー光110 が 標的102 上に照射されると、プラズマが発生してX線が放出される。 In the course of winding, the pulse laser beam 110 is irradiated on the target 102, X-rays plasma is generated is released. レーザー光が照射される標的部分では、押さえ板103 と、部材105 に取り付けられたバネによって押さえ板103 に向かって押しつけられている板104 とによって、標的位置がレーザー光110 の光軸方向に変動しないように挟み込まれている。 The targeting moiety laser beam is irradiated, vary the pressing plate 103, by a by which the plate 104 is pressed against the pressing plate 103 by a spring which is attached to member 105, the target position in the optical axis direction of the laser beam 110 It is sandwiched so as not to.

【0012】レーザー光110 は、押さえ板103 に設けられた穴111 を通って標的102 に照射される。 [0012] Laser beam 110 is irradiated to the target 102 through a hole 111 provided in the holding plate 103. リール106, Reel 106,
107 は、台101 上に回転可能に設けられている。 107 is rotatably provided on the base 101. 部材10 Member 10
5 及び押さえ板103 は、台101 上に固定されている。 5 and the presser plate 103 is fixed onto the base 101. Table
101 は、ステージ108 上に取り付けられており、ステージ108 はモーター109 によりA方向に移動できる。 101 is mounted on a stage 108, the stage 108 can move in the A direction by the motor 109. テープ状標的102 がリール107 に全て巻き取られると、前回テープ走行時のレーザー照射により、標的102 上に生じた孔を少なくとも避けるように、ステージ108 をA方向に移動する。 When the tape-shaped target 102 is wound all the reels 107, by laser irradiation of the previous tape running, so as to avoid at least the hole produced on the target 102 moves the stage 108 in the A direction. その後、今度は逆に、リール107 からリール106 に標的102 を巻き取りながらレーザー光を照射する。 Then, this time in reverse, is irradiated with laser light while winding the target 102 from the reel 107 to the reel 106.

【0013】このようにして、標的102 は複数回、往復走行させて使用することができる。 [0013] In this way, the target 102 is a plurality of times, it can be used by round trip. 図2は、巻き取り可能な基板201 と、その上に形成した薄膜状の標的材料20 Figure 2 is a windable substrate 201, a thin film of the target material formed thereon 20
2の概略断面図である。 It is a schematic cross-sectional view of a 2. 図2では、基板201 上の全面に薄膜状の標的材料202 が形成されているが、図3、図4 In Figure 2, the thin film of the target material 202 is formed over the entire surface of the substrate 201, FIG. 3, FIG. 4
に示すように、基板上のレーザー光照射部分だけに標的材料を形成してもよい。 As shown in, it may be formed only on the target material a laser beam irradiated portion of the substrate. 図3では、基板301 上にドット状の標的材料302 が形成され、また図4では、基板401 In Figure 3, the dot-shaped target material 302 is formed on a substrate 301, also in FIG. 4, a substrate 401
上にストライプ状の標的材料402 が形成されている。 Striped target material 402 is formed thereon.

【0014】なお、標的材料とバインダーを混合したものを基板上に塗布して標的を形成することもできる。 [0014] Incidentally, a mixture of target material and a binder may be formed of the target is applied onto a substrate.

【0015】 [0015]

【発明の効果】以上の通り、本発明のレーザープラズマX線源用標的によれば、発生するX線が短波長域から長波長域まで広範囲に渡って連続的であり、またX線強度の波長依存性が小さくて連続スペクトルに近く、さらに長時間連続使用できる。 As described above, according to the present invention, according to the laser plasma X-ray source for the target of the present invention, X-rays generated is continuous over a wide range from a short wavelength region to a long wavelength range, also the X-ray intensity near the continuous spectrum wavelength dependency is small, it can be further prolonged continuous use.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】は、実施例のレーザープラズマX線源用標的を示す斜視図である。 [1] is a perspective view showing a target laser plasma X-ray source embodiment.

【図2】は、本発明にかかるレーザープラズマX線源用標的の一例である巻き取り可能な基板201 と、その上に全面形成した薄膜状の標的材料202 の概略断面図である。 Figure 2 is a windable substrate 201 which is an example of a laser plasma X-ray source for the target according to the present invention, is a schematic sectional view of a thin film of the target material 202 that is entirely formed thereon.

【図3】は、本発明にかかるレーザープラズマX線源用標的の別の例である巻き取り可能な基板301 と、その上にドット状に形成した薄膜状の標的材料302の概略断面図である。 [3] includes a windable substrate 301 is another example of a laser plasma X-ray source for the target according to the present invention, in schematic cross-sectional view of a thin film of the target material 302 that is formed in a dot pattern thereon is there.

【図4】は、本発明にかかるレーザープラズマX線源用標的のさらに別の例である巻き取り可能な基板401 と、 [4] includes a windable substrate 401 is yet another example of a laser plasma X-ray source for the target according to the present invention,
その上にストライプ状に形成した薄膜状の標的材料402 A thin film of the target material 402 formed in a stripe shape thereon
の概略断面図である。 It is a schematic cross-sectional view of.

【符号の説明】 DESCRIPTION OF SYMBOLS

101 ・・・台 102 ・・・テープ状の標的( 巻き取り可能な基板の一例) 103 ・・・第1の押さえ板 104 ・・・第2の押さえ板 105 ・・・部材 106 ・・・第1のリール 107 ・・・第2のリール 108 ・・・ステージ 109 ・・・モーター 110 ・・・レーザー光 111 ・・・第1の押さえ板に設けられた穴 201 ・・・巻き取り可能な基板 202 ・・・基板全面に層状に形成された標的材料 301 ・・・巻き取り可能な基板 302 ・・・基板上にドット状に形成された層状の標的材料 401 ・・・巻き取り可能な基板 402 ・・・基板上にストライプ状に形成された層状の標的材料 以 上 101 (an example of a rollable substrate) ... stand 102 ... tape-shaped target 103 ... first pressing plate 104 ... second pressing plate 105 ... members 106 ... first 1 reel 107 ... second reel 108 ... stage 109 · motor 110 ... laser beam 111 ... first hole 201 ... takeup possible board provided pressing plate 202 ... the entire substrate surface allows the target material 401 ... winding layered formed in a dot shape to the target material 301 ... takeup possible substrate 302 ... on the substrate formed in layers of a substrate 402 target material than the lamellar formed in stripes ... on the substrate

フロントページの続き (51)Int.Cl. 6識別記号 庁内整理番号 FI 技術表示箇所 H05G 2/00 Front page continued (51) Int.Cl. 6 in identification symbol Agency Docket No. FI art display portion H05G 2/00

Claims (2)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 レーザーを照射すると、プラズマを発生してX線を放出するレーザープラズマX線源用標的において、 前記標的は、巻き取り可能な基板上に、原子量150以上の元素からなる材料を真空薄膜形成法により層状に形成してなることを特徴とするレーザープラズマX線源用標的。 When 1. A irradiated with laser, the laser plasma X-ray source for the target to emit X-rays by generating a plasma, the targets, the windable substrate, a material consisting of atomic weight of 150 or more elements laser plasma X-ray source for targets characterized by being formed into a layer by a vacuum thin film forming method.
  2. 【請求項2】 前記材料の融点が2000°C以上であることを特徴とする請求項1記載のレーザープラズマX 2. A laser plasma X according to claim 1, wherein the melting point of the material is 2000 ° C or higher
    線源用標的。 Target for the source.
JP5315446A 1993-12-15 1993-12-15 Target for laser plasma x-ray source Pending JPH07167998A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5315446A JPH07167998A (en) 1993-12-15 1993-12-15 Target for laser plasma x-ray source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5315446A JPH07167998A (en) 1993-12-15 1993-12-15 Target for laser plasma x-ray source

Publications (1)

Publication Number Publication Date
JPH07167998A true JPH07167998A (en) 1995-07-04

Family

ID=18065471

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5315446A Pending JPH07167998A (en) 1993-12-15 1993-12-15 Target for laser plasma x-ray source

Country Status (1)

Country Link
JP (1) JPH07167998A (en)

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US20130271945A1 (en) 2004-02-06 2013-10-17 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US9341954B2 (en) 2007-10-24 2016-05-17 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9678332B2 (en) 2007-11-06 2017-06-13 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
US9678437B2 (en) 2003-04-09 2017-06-13 Nikon Corporation Illumination optical apparatus having distribution changing member to change light amount and polarization member to set polarization in circumference direction
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US9885872B2 (en) 2003-11-20 2018-02-06 Nikon Corporation Illumination optical apparatus, exposure apparatus, and exposure method with optical integrator and polarization member that changes polarization state of light
US10234770B2 (en) 2004-02-06 2019-03-19 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US10007194B2 (en) 2004-02-06 2018-06-26 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US20130271945A1 (en) 2004-02-06 2013-10-17 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US10241417B2 (en) 2004-02-06 2019-03-26 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
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US7456417B2 (en) 2005-01-12 2008-11-25 Nikon Corporation Laser plasma EUV light source, target material, tape material, a method of producing target material, a method of providing targets, and an EUV exposure device
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