TW201546323A - 執行氣體系統共享多反應器之一致性處理的方法 - Google Patents

執行氣體系統共享多反應器之一致性處理的方法 Download PDF

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TW201546323A
TW201546323A TW104107876A TW104107876A TW201546323A TW 201546323 A TW201546323 A TW 201546323A TW 104107876 A TW104107876 A TW 104107876A TW 104107876 A TW104107876 A TW 104107876A TW 201546323 A TW201546323 A TW 201546323A
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gas
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Eiichiro Shiba
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Asm Ip Holding Bv
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges

Abstract

本發明提供一種執行多反應器之一致性處理的方法包括(a)根據其中有實施步驟的反應器之次序，實施由各該反應器內該等步驟所組成之循環；然後(b)在改變實施該等步驟的該等反應器之該當下先前次序後，實施各反應器內該等步驟；然後(c)重複製程(b)直到在該等多反應器完成目標處置。在各反應器內基板上所實施的該目標處置皆相同。

Description

執行氣體系統共享多反應器之一致性處理的方法
本發明一般係關於一種執行共享氣體供給系統的多反應器之一致性處理的方法。
為增加晶圓處理量，藉由執行批次程式在反應器內裝載多個晶圓並同時處理。然而，很難使用批次程式高精度執行處理。另一方面，若在反應器內裝載單一晶圓並處理，則該製程可高精度控制，但處理量會受到影響。若該單一晶圓處理類型之多反應器藉由同時操作該等多反應器而結合並共享處理氣體供給系統，則處理量可增加。然而，當該等多反應器共享設置有內含液態前驅物之共用瓶(貯液槽)的共用處理氣體供給系統，且汽化前驅物同時供給到該等多反應器時，由於從該瓶子至各反應器的配管長度差異、對各反應器的該供給管線之電導差異等，因此很難將汽化前驅物平均供給到所有該等多反應器，從而在該等反應器之中產生沉積速率、薄膜一致性、薄膜成分等變化。該上述在該單一晶圓處理類型之該等多反應器內的變化問題，可藉由在該等多反應器內順序實施該製程而大幅減輕，亦即在該等多反應器內以一定延遲順序開始該製程(在移動時序將汽化前驅物順序供給到該等多反應器)，其中該製程以該順序重複以在該等 多反應器內處理多個晶圓。若該前驅物具有相對較低汽壓，亦即該前驅物量相對較少，故很容易就能從該氣體供給系統清除該前驅物，則該上述順序製程運作良好以在該等多反應器之中減少薄膜品質變化。
然而，若該前驅物具有高汽壓(如磷酸三甲酯(Trimethyl phosphite，TMPI)在25℃具有2.27kPa汽壓，而双(二甲基氨基)矽烷(Bisdiethylaminosilane，BDEAS)在25℃具有0.436kPa汽壓)，則該前驅物量多，亦即很難從該氣體供給系統完全清除該氣體。本發明人發現在共享氣體供給系統的多反應器之並行循環處理系統中使用具有高汽壓的前驅物時，在該等反應器之中依該等反應器開始處理的該次序而定發生薄膜特性變化。
關於相關領域的問題和解決方案之任何討論，皆僅為了提供本發明背景之目的故包括於所揭示內容中，且不應被視為承認該討論之任何或所有皆在本發明做出時已知。
一些具體實施例提供一種執行多反應器之一致性處理的方法包含：(a)根據實施該等步驟的該等反應器之該次序，實施由各反應器內步驟所組成之循環；然後(b)在改變實施該等步驟的該等反應器之該當下先前次序後，實施各反應器內該等步驟；然後(c)重複製程(b)直到在該等多反應器完成目標處置，在各反應器內基板上所實施的前述目標處置皆相同。上述製程(a)至(c)可同等適用於包含二或三或多個反應器的系統，而不改變操作原理。此外，上述製程(a)至(c)可同等適用於在一個循環中包括兩個以上步驟的製程配方，亦即一個循環處理單元。
在上述中，藉由在同一目標處置期間改變該等反應器用於處理的該次序，舉例來說，薄膜特性變化能有效抑制。改變該處理次序包括改變前驅物氣體及/或反應氣體供給到該等反應器之該次序、改變射頻(RF)功率所施加於該等反應器之該次序、及/或改變其中實施清除的該等反應器之該次序。這些改變可獨立實施，且一些該等步驟可同時實施。舉例來說，處理氣體供給到該等反應器之該次序改變，而射頻功率同時施加於所有該等反應器。在一些具體實施例中，該等重複製程為用於形成摻雜薄膜、金屬薄膜、或一氧化矽(SiO)薄膜的製程，或是用於修整或蝕刻薄膜的製程。在一些具體實施例中，由於在反應器之中的薄膜特性變化可藉由改變於其中實施在一個循環中之步驟的該等反應器之該次序、藉由查看指示在該等反應器下游之薄膜特性變化的參數、及將該等參數反饋到控制單元而加以控制，因此可決定合適次序並可使用該決定的次序執行該處理，從而改進在所有該等反應器內的處理之一致性。該上述反饋控制可連續執行。
為了彙總本發明之態樣和在相關領域上所達成該等優勢之目的，故在所揭示內容中說明本發明之特定目標和優勢。當然，應可理解所有此種目標或優勢不必皆可按照本發明之任何特定具體實施例達成。因此，舉例來說，熟習此項技術者應可認可本發明可以達成或最佳化如文中所講述之一項優勢或多項優勢的方式體現或實行，而不必達成如文中可能講述或建議之其他目標或優勢。
本發明之進一步態樣、特徵、和優勢將從接下來的實施方式變得顯而易見。
1、2‧‧‧反應器
3‧‧‧自動壓力控制器
4‧‧‧排氣泵；泵
5、6‧‧‧質量流量控制器
7‧‧‧瓶子(第一氣體源)
8‧‧‧瓶子(第二氣體源)
9‧‧‧第一氣體管線
10‧‧‧第二氣體管線
11‧‧‧氧氣質量流量控制器
12‧‧‧氬氣質量流量控制器
13‧‧‧氦氣質量流量控制器
14‧‧‧射頻產生器
15‧‧‧開關
17、19、51、52‧‧‧進氣管線
16、18、20、55、56、57、58、59、60、61、62‧‧‧氣體管線
41‧‧‧第一反應器
42‧‧‧第二反應器；第二腔室
43‧‧‧瓶子
44‧‧‧瓶子
45、46‧‧‧瓶子單元
47‧‧‧瓶子整合式氣體系統單元；整合式氣體系統
48‧‧‧自動壓力控制器
49‧‧‧遠端電漿單元
50‧‧‧射頻產生器；射頻功率產生器
53、54‧‧‧壓力轉換器
63、64、67‧‧‧管線
65、66‧‧‧排氣管線
68、69、70、71‧‧‧管線；氣體管線
v1-v10、v21-v42‧‧‧閥門
RC1‧‧‧反應器1
RC2‧‧‧反應器2
STD RC1、STD RC2‧‧‧在比較範例中的第一反應器和第二反應器
ALT RC1、ALT RC2‧‧‧在範例1中的第一反應器和第二反應器
MB‧‧‧匹配盒
BTL‧‧‧瓶子
本發明之這些和其他特徵現在將參照欲例示而非限制本發明的較佳具體實施例之所附圖式進行說明。所附圖式為了例示性目的而大幅簡化，且不必按比例繪製。
圖1為本發明具體實施例所應用之雙腔電漿輔助原子層沉積(Plasma-enhanced atomic layer deposition，PEALD)設備之示意圖。
圖2例示應用於根據一比較具體實施例之雙腔PEALD設備的示意製程順序。
圖3例示應用於根據一比較具體實施例之雙腔PEALD設備的示意製程順序。
圖4例示應用於根據本發明之另一具體實施例之雙腔PEALD設備的示意製程順序。
圖5例示應用於根據本發明之又另一具體實施例之雙腔PEALD設備的示意製程順序。
圖6例示應用於根據本發明之再又另一具體實施例之雙腔PEALD設備的示意製程順序。
圖7例示應用於根據一比較具體實施例之三室PEALD設備的示意製程順序。
圖8例示應用於根據本發明一具體實施例之三室PEALD設備的示意製程順序。
圖9例示應用於根據一比較具體實施例之雙腔PEALD設備的詳細製程順序。
圖10例示應用於根據本發明一具體實施例之雙腔PEALD 設備的詳細製程順序。
圖11為本發明一具體實施例所應用之雙腔PEALD設備之示意圖。
圖12例示根據本發明一具體實施例在圖11中所例示該雙腔PEALD設備中的製程順序之步驟1。
圖13例示根據本發明一具體實施例在圖11中所例示該雙腔PEALD設備中的製程順序之步驟2。
圖14例示根據本發明一具體實施例在圖11中所例示該雙腔PEALD設備中的製程順序之步驟3和步驟5。
圖15例示根據本發明一具體實施例在圖11中所例示該雙腔PEALD設備中的製程順序之步驟4和步驟6。
圖16例示根據本發明一具體實施例在圖11中所例示該雙腔PEALD設備中的製程順序之步驟7。
圖17為顯示根據一比較具體實施例沉積於雙腔PEALD設備之各反應器內的磷矽玻璃(Phosphorus silicon glass，PSG)薄膜在深度方向上之磷濃度的曲線圖。
圖18為顯示根據本發明一具體實施例沉積於雙腔PEALD設備之各反應器內的磷矽玻璃(PSG)薄膜在深度方向上之磷濃度的曲線圖。
圖19顯示在範例1中沉積薄膜的該等條件。
在所揭示內容中，「氣體(gas)」可包括汽化固體及/或液體，並可由單一氣體或氣體之混合物組成。同樣地，冠詞「一(a)」或「一(an)」 指稱包括多個物種的物種(species)或類屬(genus)。在所揭示內容中，透過噴淋頭引入反應器的處理氣體可由前驅物、反應物氣體、和沖洗氣體構成、基本上組成、或組成。該前驅物和該反應物氣體可在激發態下彼此反應，並可引入另一氣體或載運氣體如稀有氣體。除該處理氣體以外的氣體，亦即未通過該噴淋頭所引入之氣體，可用於如填封包括一填封氣體如稀有氣體的該反應空間。在一些具體實施例中，「薄膜(film)」指稱無針孔以覆蓋整個目標或所關注表面、在實質上垂直於厚度方向的方向上連續延伸的層，或是僅指稱覆蓋目標或所關注表面的層。
在所揭示內容中，「雙腔(dual chambers)」指稱彼此接近配置且實質上視為如在位置、結構、功能、及/或操作上彼此分開或隔離、用於處理晶圓的兩個部分或隔室，其不僅包括彼此並排或垂直連接的兩個分開腔室，而且包括在一個共用腔室內並排或垂直配置的兩個隔離區域。在所揭示內容中，「模組(module)」指稱可分離地附加於晶圓處理主腔室的標準化單元。
在所揭示內容中，任何所定義意義皆不必排除在一些具體實施例中的普通和習慣意義。
又，在所揭示內容中，變量之任兩個數字皆可構成該變量之可行範圍，因為該可行範圍可基於日常工作而決定，且所指出之任何範圍皆可包括或排除該等端點。此外，所指出變量之任何值(不論其是否用「關於(about)」指出)皆可指稱精確值或近似值並包括相當值，且在一些具體實施例可指稱平均值、中間值、代表值、多數值等。
在未指明條件及/或結構的本發明所揭示內容中，熟習此項 技術者鑑於本發明所揭示內容，很容易就能如同日常實驗之事項提供此種條件及/或結構。
在所有所揭示具體實施例中，在具體實施例中所使用的任何元件皆可置換為與其等效的任何元件，包括為該等預期目的於文中明確、必要、或固有所揭示者。又，本發明同樣可適用於設備和方法。
該等具體實施例將就較佳具體實施例進行說明。然而，本發明不限於該等較佳具體實施例。
具體實施例提供一種執行共享第一氣體源和第二氣體源的多反應器之一致性處理的方法，各反應器皆具有來自該第一氣體源之第一氣體、來自該第二氣體源之第二氣體、和沖洗氣體所透過引入該反應器的進氣管線，其中在各反應器內所實施目標處置皆相同，前述方法包含：(i)以該第一氣體供給到該等多反應器之一然後供給到該等多反應器之另一之供給次序，透過該等各自進氣管線將該第一氣體供給到該等多反應器；(ii)以該第二氣體供給到該等多反應器之一然後供給到該等多反應器之另一之供給次序，透過該等各自進氣管線將該第二氣體供給到該等多反應器；(iii)在該第一氣體之每次供給後和該第二氣體之每次供給後皆透過該等各自進氣管線將該沖洗氣體供給到該等多反應器，以便從該等多反應器和該等進氣管線分別清除該第一氣體和該第二氣體；以及(iv)連續重複步驟(i)至(iii)以完成該等多反應器之該目標處置，其中該第一氣體或該第二氣體中至少一者之該供給次序，在該第一氣體或該第二氣體中該至少一者之該供給重複時改變。在所揭示內容中，「連續(continuously)」指稱未破壞真空狀態、如同時間軸未中斷、未改變處置條件、或在其後即時。
該等多反應器可為並排或垂直配置的二或三或多個反應器。舉例來說，可使用可為模組的雙腔反應器。該等多反應器共享第一氣體源和第二氣體源，且各反應器皆具有來自該第一氣體源之第一氣體、來自該第二氣體源之第二氣體、和載運氣體(亦用作沖洗氣體)所透過引入該反應器的進氣管線。由於氣體供給系統至少部分係由該等多反應器共享，因此當同時供給氣體到該等多反應器時，在均等分隔氣體流量到該等多反應器上可能會因從該氣體源至各反應器的配管長度差異和配管之電導差異而發生問題。因此，一般來說，氣體會順序供給到該等多反應器，而未將氣體流量分隔成多個路徑。然而，即使在順序供給氣體時，在該等多反應器之中的流動路徑仍不同，導致在該等反應器之中的氣體供給非一致性。
在一些具體實施例中，該等多反應器共享排氣系統，且各反應器之該壓力使用該排氣系統加以控制。
在一些具體實施例中，該等多反應器各皆包含另一氣體管線，透過氣體管線將添加氣體或惰性氣體供給到該等多反應器。
一般來說，當該第一氣體源和該第二氣體源包括分別存放化合物液體的瓶子時，其汽化氣體分別為該第一氣體和該第二氣體，由於一些前驅物和反應物具有高汽壓，因此在該等多反應器之中的氣體流量差異可能會變得更有問題，從而該等化合物量多，亦即不容易從該等多反應器均等清除這些化合物。在一些具體實施例中，來自該第一氣體源的第一氣體管線分枝並連接到該等多反應器之各該等進氣管線，且來自該第二氣體源的第二氣體管線分枝並連接到該等多反應器之各該等進氣管線，其中該第一氣體和該沖洗氣體係透過該第一氣體管線、從中所分枝出該等管線、 和該等多反應器之該等進氣管線引入該等多反應器，而該第二氣體和該沖洗氣體係透過該第二氣體管線、從中所分枝出該等管線、和該等多反應器之該等進氣管線引入該等多反應器，其中各分枝管線皆設置有閥門。在上述中，在步驟(i)至(iii)中所定義該等氣體流量可使用各閥門有效控制。在一些具體實施例中，該沖洗氣體透過該第一氣體管線單獨或與該第一氣體一起連續流動，而該沖洗氣體透過該第二氣體管線單獨或與該第二氣體一起連續流動。由於該第一氣體、與該第一氣體相關聯的該沖洗氣體、該第二氣體、和與該第二氣體相關聯的該沖洗氣體通過各反應器之進氣管線，因此需要一氣體流量切換單元。在該氣體流量切換單元中，各氣體通過該單元的該路徑對各反應器皆不同。因此，當各氣體供給到該等反應器之該製程次序為固定時，在該等反應器之中的氣體流量差異亦為固定。藉由實施上述步驟(i)至(iv)，在該等反應器之中的該氣體流量差異可降至最低。
在各反應器中所實施的該目標處置皆相同。在一些具體實施例中，對該目標處置的該等重複製程為用形成摻雜薄膜、金屬薄膜或一氧化矽薄膜的製程，或是用於修整或蝕刻薄膜的製程。氣體數量、氣體類型、流動速率、氣體激發方法、溫度、壓力等可根據該目標處置而決定。熟習此項技術者很容易就能如同日常實驗之事項提供此種條件。
在一些具體實施例中，一個循環係由步驟(i)至(iii)構成，且在步驟(iv)中該循環重複，其中該第一氣體或該第二氣體中至少一者之該供給次序每一循環皆改變。在一些具體實施例中，該第二氣體之該供給次序每一循環皆改變，而該第一氣體之該供給次序則未改變。在其他具體實施例中，各該第一氣體和該第二氣體之該供給次序每一循環皆改變。在一些 具體實施例中，一個循環係由步驟(i)至(iii)構成，且步驟(ii)在該循環中重複，其中該第二氣體之該供給次序當步驟(ii)在該循環中重複時改變，前述循環在步驟(iv)中重複。在一些具體實施例中，該第一氣體之供給速率較該第二氣體之供給速率更快兩倍或多倍。
在一些具體實施例中，該方法更包含(iiia)在每個步驟(iii)後皆在該等多反應器中施加射頻(RF)功率。射頻功率可順序或同時施加於該等多反應器。在一些具體實施例中，該等多反應器共享產生射頻功率的射頻產生器。在一些具體實施例中，該目標處置係藉由電漿輔助原子層沉積(PEALD)的薄膜之沉積。或者，該目標處置可藉由熱原子層沉積(thermal ALD)、自由基增強原子層沉積(radical-enhanced ALD)、環化學氣相沉積(cyclic CVD)、或任何其他循環處理而實施，其中循環重複舉例來說20至300次(一般來說50至200次)以完成該目標處置。
在另一態樣中，具體實施例提供一種執行多反應器之一致性處理的方法包含：(a)根據實施該等步驟的該等反應器之該次序，實施由各反應器內步驟所組成之循環；然後(b)在改變實施該等步驟的該等反應器之該當下先前次序後，實施各反應器內該等步驟；然後(c)重複製程(b)直到在該等多反應器完成目標處置，在各反應器內基板上所實施的前述目標處置皆相同。
在一些具體實施例中，該等步驟包括供給第一氣體之步驟和供給第二氣體之步驟。在一些具體實施例中，該等第一和第二氣體係透過第一共用進氣管線供給到該等反應器之一，且該等第一和第二氣體係透過第二共用氣體管線供給到該等反應器之另一，其中該第一氣體係供給到分 枝並連接到該等第一和第二共用進氣管線的第一氣體管線，且該第二氣體係供給到分枝並連接到該等第一和第二共用進氣管線的第二氣體管線。
另一具體實施例提供一種執行第一反應器和第二反應器之一致性處理的方法，其中在各反應器內基板上所實施的目標處置皆相同，其中該目標處置藉由以此順序重複步驟A和步驟B而實施，其中在該第一反應器所實施的步驟A和B指稱為步驟A1和B1，而在該第二反應器所實施的步驟A和B指稱為步驟A2和B2，前述方法包含：(a)以此次序實施步驟A1、A2、B1、和B2；然後(b)在改變該即時先前次序後實施該等步驟；然後(c)重複製程(b)直到該目標處置在該等第一和第二反應器完成。
該等具體實施例將參照所附圖式進行說明。所附圖式不欲限制本發明。
圖1為本發明一具體實施例所應用之雙腔電漿輔助原子層沉積(PEALD)設備之示意圖。該設備結合電漿反應器和流量控制閥，係欲與編程以實施以下所述該等順序之控制機構搭配，其可用於本發明具體實施例中。在此圖示中，反應器1(RC1)和反應器2(RC2)並排設置且組成模組。反應器1、2共享瓶子7(第一氣體源)和瓶子8(第二氣體源)，還有連接到排氣泵4的自動壓力控制器3。又，反應器1、2共享一射頻產生器14。當該第一氣體供給到反應器1或反應器2時，載運氣體(如氬(Ar))係透過質量流量控制器5提供到瓶子7，其內含用於該第一氣體的液體並配備加熱器，其中閥門v2開啟而閥門v1閉合。該載運氣體進入瓶子7並附帶用於該第一氣體的該汽化液體從其流出，經由閥門v3到第一氣體管線9。該第一氣體係由該活性材料(用於該第一氣體的汽化液體)和該載運氣體之混合物組成。第一氣體管線9分枝 到連接到反應器1的進氣管線17和連接到反應器2的進氣管線19。該第一氣體經由設置於氣體管線9與進氣管線17之間的閥門v7(設置於氣體管線9與進氣管線19之間的閥門v8閉合)流經氣體管線9和進氣管線17，並進入反應器1。當閥門v7閉合而閥門v8開啟時，該第一氣體經由閥門v8流經氣體管線9和進氣管線19，並進入反應器2。當閥門v1開啟而閥門v2閉合時，僅該載運氣體經由與該第一氣體相同的路線流經氣體管線9並進入反應器1或2，其中該載運氣體用作沖洗氣體。
當該第二氣體供給到反應器1或反應器2時，載運氣體(如氬)係透過質量流量控制器6提供到瓶子8，其內含用於該第二氣體的液體並配備加熱器，其中閥門v5開啟而閥門v4閉合。該載運氣體進入瓶子8並附帶用於該第二氣體的該汽化液體從其流出，經由閥門v6到第二氣體管線10。該第二氣體係由該活性材料(用於該第二氣體的汽化液體)和該載運氣體之混合物組成。如同第一氣體管線9，第二氣體管線10分枝到連接到反應器1的進氣管線17和連接到反應器2的進氣管線19，其中第一和第二氣體管線9、10共享進氣管線17、19。該第二氣體經由設置於氣體管線10與進氣管線17之間的閥門v9(設置於氣體管線10與進氣管線19之間的閥門v10閉合)流經氣體管線10和進氣管線17，並進入反應器1。當閥門v9閉合而閥門v10開啟時，該第二氣體經由閥門v10流經氣體管線10和進氣管線19，並進入反應器2。當閥門v4開啟而閥門v5閉合時，僅該載運氣體經由與該第二氣體相同的路線流經氣體管線10並進入反應器1或2，其中該載運氣體用作沖洗氣體。
此外，與該等第一和第二氣體分開，氧氣、氬氣、和氦氣必要時舉例來說可經由氣體管線16分別透過氣體管線18和20，從氧氣質量流 量控制器11、氬氣質量流量控制器12、和氦氣質量流量控制器13分別供給到反應器1和2。又，射頻功率可經由各自匹配盒(Matching boxes，MB)使用開關15從射頻產生器14施加於反應器1或2。在反應器1和2內的壓力係由自動壓力控制器3加以控制。
雖然圖1例示該設備包含兩個瓶子7、8、一個射頻產生器14、一個自動壓力控制器3、一個泵4、和四條氣體管線17、18、19、20，但該設備可更包含一個遠端電漿單元。此外，該設備可更包含一個或多個附加反應器、一個或多個瓶子、和兩條或多條氣體管線。該射頻產生器可分開連接到各反應器。對用於熱循環處理的設備而言，未安裝射頻產生器。
熟習此項技術者應可瞭解該設備包括一個或多個控制器(未顯示)，其經編程或配置以使於文中別處所說明該沉積和反應器清潔製程得以實施。如同熟習此項技術者應可瞭解，該(等)控制器與該反應器之該等各種電源、加熱系統、泵、機器人系統、和氣體流量控制器或閥門通信。
在上述中，包括閥門v7、v8、v9、和v10的一區域組成設置於氣體管線9、10與進氣管線17、19之間的氣體流量切換單元。藉由操縱與閥門v1至v6相關聯的閥門v7至v10，可控制哪種氣體供給到哪個反應器，還可控制該氣體供給到反應器1、2之該次序。
圖11至圖16根據本發明一具體實施例例示該氣體流量切換單元如何在兩個反應器之間造成不均勻流量。圖11為本發明具體實施例所應用之雙腔PEALD設備之示意圖。在該圖示中，雙點鏈線表示配備用於溫度控制之加熱元件的部分，而虛線表示無加熱元件覆蓋隔熱材料的部分。在此圖示中，該設備包含一瓶子單元45，其包括內含液體材料(如磷摻雜物) 的一瓶子(BTL 1)43；一瓶子單元46，其包括內含液體材料(如含矽前驅物)的一瓶子(BTL 2)44；一瓶子整合式氣體系統單元(Bottle IGS Unit)47，其用於切換氣體流量；一第一反應器(RC1)41；一第二反應器(RC2)42；一射頻產生器50；以及一遠端電漿單元49。氣體透過進氣管線51流入第一反應器41，且氣體透過進氣管線52流入第二反應器42，而氣體透過附帶閥門v40的排氣管線66從各反應器41、42之反應空間排出，並透過附帶閥門v39的排氣管線65從各反應器41、42之底部排出。排氣管線65併入排氣管線66，然後該等氣體透過自動壓力控制器48排出。處理氣體透過氣體管線62饋送至進氣管線51，且處理氣體透過氣體管線61饋送至進氣管線52。氣體透過管線67供給到遠端電漿單元49並激發，然後分別透過閥門v37和v38饋送至進氣管線51、52。添加氣體、惰性氣體等透過用虛線標示的管線饋送至進氣管線51、52。射頻功率從射頻功率產生器50施加於各反應器41、42。整合式氣體系統47為用於切換氣體流量的單元，其中第一載運氣體透過氣體管線59饋送至整合式氣體系統47，且第二載運氣體透過氣體管線60饋送至整合式氣體系統47。該第一載運氣體透過附帶壓力轉換器53之氣體管線55從整合式氣體系統47流出到瓶子單元45，且氣體透過氣體管線56從瓶子單元45流入整合式氣體系統47。該第二載運氣體透過附帶壓力轉換器54之氣體管線58從整合式氣體系統47流出到瓶子單元46，且氣體透過氣體管線57從瓶子單元46流入整合式氣體系統47。處理氣體透過氣體管線62從整合式氣體系統47流出朝向第一反應器41，而處理氣體透過氣體管線61從整合式氣體系統47流出朝向第二反應器42。液體材料透過管線64供給到瓶子43，且另一液體材料透過管線63供給到瓶子44。熟習此項技術者應可瞭解該設備包 括一個或多個控制器(未顯示)，其經編程或配置以使於文中別處所說明該沉積和反應器清潔製程得以實施。如同熟習此項技術者應可瞭解，該(等)控制器與該反應器之該等各種電源、加熱系統、泵、機器人系統、和氣體流量控制器或閥門通信。
圖12例示根據本發明一具體實施例在圖11中所例示該雙腔PEALD設備中的製程順序之步驟1。在步驟1中，該第一載運氣體(由粗實線表示)透過氣體管線59流入整合式氣體系統47，而經由附帶閥門v26之管線68和附帶閥門v28之管線71透過氣體管線61從其流出，其中閥門v24、閥門v25、和閥門v27閉合。然後，透過進氣管線52該第一載運氣體作為沖洗氣體饋送至第二反應器42。該第二載運氣體(由粗虛線表示)透過氣體管線60流入整合式氣體系統47，而透過氣體管線58經由閥門v33從其流出到瓶子單元46，其中閥門v31閉合。該第二載運氣體經由閥門v35進入瓶子44，並經由閥門v34透過氣體管線57用汽化前驅物(如由具有圓點之粗點線表示的前驅物)從其排出，其中閥門v36閉合。該前驅物經由閥門v32透過氣體管線57流入整合式氣體系統47，而經由管線69和附帶閥門v29之管線70透過氣體管線62從其流出，其中閥門v30閉合。然後，該前驅物透過進氣管線51饋送至第一反應器41。
圖13例示根據本發明一具體實施例在圖11中所例示該雙腔PEALD設備中的製程順序之步驟2。在步驟2中，閥門v27開啟而閥門v28閉合，使得該第一載運氣體透過氣體管線70、氣體管線62、和進氣管線51饋送至代替第二反應器42的第一反應器41。此外，閥門v30開啟而閥門v29閉合，使得該前驅物透過氣體管線71、氣體管線61、和進氣管線52饋送至代 替第一反應器41的第二反應器42。
圖14例示根據本發明一具體實施例在圖11中所例示該雙腔PEALD設備中的製程順序之步驟3。在步驟3中，閥門v26閉合而閥門v24開啟，使得該第一載運氣體透過氣體管線55經由閥門v24從整合式氣體系統47流出到瓶子單元45。該第一載運氣體經由閥門v21進入瓶子43，而經由閥門v22透過氣體管線56用汽化摻雜物(如由具有方點之粗點線表示的摻雜物)從其排出，其中閥門v23閉合。該摻雜物經由閥門v25透過氣體管線56流入整合式氣體系統47，而經由管線68和附帶閥門v27之管線70透過氣體管線62從其流出，其中閥門v28閉合。然後，該摻雜物透過進氣管線51饋送至第一反應器41，代替第二反應器42。此外，閥門v31開啟而閥門v33閉合，使得該第二載運氣體透過氣體管線69、附帶閥門v30之氣體管線71、氣體管線61、和進氣管線52饋送至第二反應器42。
圖15例示根據本發明一具體實施例在圖11中所例示該雙腔PEALD設備中的製程順序之步驟4。在步驟4中，閥門v27閉合而閥門v28開啟，使得該摻雜物透過氣體管線71、氣體管線61、和進氣管線52饋送至代替第一反應器41的第二腔室42。此外，閥門v30閉合而閥門v29開啟，使得該第二載運氣體透過氣體管線70、氣體管線62、和進氣管線51作為沖洗氣體饋送至代替第二反應器42的第一反應器41。
步驟5實質上與在圖14中所例示之步驟3相同，使得該摻雜物饋送至第一反應器41，而該沖洗氣體饋送至第二反應器42。
步驟6實質上與在圖15中所例示之步驟4相同，使得該摻雜物饋送至第二反應器42，而該沖洗氣體饋送至第一反應器41。
圖16例示根據本發明一具體實施例在圖11中所例示該雙腔PEALD設備中的製程順序之步驟7。在步驟6中，閥門v26開啟而閥門v24閉合，使得該第一載運氣體透過氣體管線68、氣體管線71、和氣體管線61、和進氣管線52作為沖洗氣體饋送至第二反應器42。
在上述中，該摻雜物氣體較該前驅物具有更高汽壓，因此從該反應器清除該摻雜物較清除該前驅物更難。在步驟3(圖14)中，該摻雜物饋送至第一反應器41，而在步驟4(圖15)中，該沖洗氣體饋送至第一反應器41。亦即，饋送至第一反應器41的該氣體從該摻雜物改變為該沖洗氣體。由於該摻雜物係藉由使用該第一載運氣體而饋送至第一反應器41，而該沖洗氣體為該第二載運氣體，因此該上述改變(在該第一反應器從該摻雜物改變為該沖洗氣體)係藉由將該所使用之載運氣體從該第一載運氣體切換為該第二載運氣體而達成，亦即當該摻雜物饋送至第一反應器41時，使用附帶閥門v27之氣體管線70之第一半(圖14)，而當該沖洗氣體饋送至第一反應器41時，使用附帶閥門v29之氣體管線70之第二半(圖15)，因此使用氣體管線70之該等不同部分。
相對而言，在步驟6(圖15)中，該摻雜物饋送至第二反應器42，而在步驟7(圖16)中，該沖洗氣體饋送至第二反應器42。亦即，饋送至第二反應器42的該氣體從該摻雜物改變為該沖洗氣體。由於該摻雜物係藉由使用該第一載運氣體而饋送至第二反應器42，而該沖洗氣體亦為該第一載運氣體，因此該上述改變(在該第二反應器從該摻雜物改變為該沖洗氣體)係藉由使用同一第一載運氣體將來自通過瓶子43所傳遞之氣體流量切換為繞行瓶子43之氣體流量而達成，亦即當該摻雜物饋送至第二反應器42時， 使用附帶閥門v28之氣體管線71之第一半(圖15)，同樣當該沖洗氣體饋送至第二反應器42時，使用附帶閥門v28之氣體管線71之該第一半(圖16)，因此使用氣體管線71之相同部分。就上述該原因來說，當第二反應器42在該摻雜物饋送後進行清除時，該沖洗氣體會將氣體管線71中所留下之一些殘餘摻雜物攜帶到第二反應器42。這種情況只會在該第二反應器中發生(當該饋送次序改變時，該上述問題只會在該第一反應器中發生)。所以，在該等第一與第二反應器之間發生薄膜特性之偏差。
在一些具體實施例中，藉由改變該氣體饋送至該等反應器之該次序，可有效解決該上述問題。
圖2例示應用於根據一比較具體實施例之雙腔PEALD設備的示意製程順序。A、B、和C分別表示製程A(如氣體供給)、製程B(如氣體供給)、和製程C(如射頻應用)。在此順序中，由A、A、B、C、B、和C所組成之循環總是從反應器1(RC 1)開始，接著為反應器2(RC2)。因此會發生該上述所討論在該等反應器之間的薄膜特性之偏差問題。圖3例示應用於根據比較具體實施例之雙腔PEALD設備的示意製程順序。在此順序中，該循環總是從該第二反應器開始，接著為該第一反應器，因此會發生同樣問題。
圖4例示應用於根據本發明之另一具體實施例之雙腔PEALD設備的示意製程順序。除A、B、或C以外的空格表示無明確處置之清除。在此順序中，該第一次，該循環從該第一反應器開始，而該第二次，該循環從該第二反應器開始，亦即該循環首次開始的該等反應器之該次序每一循環皆改變。亦即，該循環在該等第一和第二反應器交替開始。藉由在該等第一和第二反應器交替開始該循環，可有效解決反應器到反應器偏 差之問題。
圖5例示應用於根據本發明之又另一具體實施例之雙腔PEALD設備的示意製程順序。在此順序中，製程A總是從該第一反應器開始，而製程B和C從該等第二和第一反應器交替開始。藉由在該等第一和第二反應器交替開始該循環之僅一部分，可有效解決反應器到反應器偏差之問題。
圖6例示應用於根據本發明之再又另一具體實施例之雙腔PEALD設備的示意製程順序。在此順序中，製程C在該等第一和第二反應器同時實施，而製程A從該等第一和第二反應器交替開始，而製程B亦從該等第一和第二反應器交替開始但無關於製程A。藉由在該等第一和第二反應器交替且獨立開始該循環之各部分(亦在該等第一和第二反應器同時開始該循環之一部分)，可有效解決反應器到反應器偏差之問題。
圖7例示應用於根據一比較具體實施例之三室PEALD設備的示意製程順序。A、B、C、和D分別表示製程A(如氣體供給)、製程B(如氣體供給)、製程C(如氣體供給)、和製程D(如射頻應用)。在此順序中，由A、A、B、D、C、B、D、和C所組成之循環總是從反應器1(RC1)開始，接著為反應器2(RC2)和反應器3(RC3)。因此會發生該上述所討論在該等反應器之中的薄膜特性之偏差問題。圖8例示應用於根據本發明一具體實施例之三室PEALD設備的示意製程順序。在此順序中，該第一次，該循環從該第一反應器開始，而該第二次，該循環從該第三反應器開始，亦即該循環首次開始的該等反應器之該次序每一循環皆改變。亦即，該循環在該等第一和第三反應器交替開始。藉由在該等第一和第三反應器交替開始該循環，可有 效解決反應器到反應器偏差之問題。
圖9例示應用於根據一比較具體實施例之雙腔PEALD設備的詳細製程順序。此詳細順序對應於在圖2中所例示該示意順序。在此順序中，空白(無數字)表示未切換閥門清除；「1」表示切換閥門清除(0.1秒)；「2」表示供給一氧化矽前驅物(0.3秒)；「3」表示清除一氧化矽前驅物(0.9秒)；「4」表示供給磷(P)摻雜物(0.3秒)；「5」表示清除磷摻雜物(0.1秒)；以及「6」表示應用射頻功率(0.2秒)。在此順序中，在該第一反應器(該上方順序)中，在製程4(供給磷摻雜物)後，該清除(製程5)使用同一載運氣體開始，因此，一些殘餘摻雜物可引入該第一反應器。然而，使用同一載運氣體的該清除僅持續0.4秒，且其後，該載運氣體切換為不含殘餘摻雜物的不同載運氣體。相對而言，在該第二反應器(該下方順序)中，在製程4(第二次發生)後，該清除(製程5)使用同一載運氣體開始，並持續1.0秒，因為在該上述製程5期間未實施載運氣體切換。因此，較在該第一反應器中更多殘餘摻雜物可引入該第二反應器，從而造成反應器到反應器偏差。
圖10例示應用於根據本發明一具體實施例之雙腔PEALD設備的詳細製程順序。此詳細順序對應於在圖4中所例示該示意順序。在此順序中，該循環從該等第一和第二反應器交替開始，因此可有效解決該上述問題。
在一些具體實施例中，可使用在美國專利申請公開號No.2014/0033978中所揭示該氣體供給系統，其全部所揭示內容皆於文中納入作為參考。
在一些具體實施例中，由於在反應器之中的薄膜特性變化可 藉由改變於其中實施在一個循環中之至少一個步驟的該等反應器之該次序、藉由查看指示在該等反應器下游之薄膜特性變化的參數、及將該等參數反饋到控制單元而加以控制，因此可決定該合適次序並可使用該所決定之次序執行該處理，從而改進在所有該等反應器內的處理之一致性。該上述反饋控制可連續執行。舉例來說，自電漿光譜儀(Self Plasma OES，SPOES，南韓Manoteck公司所銷售產品名稱)或安裝於反應器下游的自電漿監測感測器可用於該上述目的。
範例1
磷矽玻璃(PSG)薄膜使用在圖1中所例示該PEALD設備在圖19中所顯示該等條件下藉由PEALD形成於基板(Φ300mm)上。PEALD循環之該順序為在圖9(比較範例)和圖10(範例1)中所顯示者。作為前驅物，使用取(二甲基氨基)矽烷(BDEAS)，而作為摻雜物，使用磷酸三甲酯(TMPI)，其中該摻雜物之該汽壓約較該前驅物更高3.5倍。
圖17為顯示根據比較範例沉積於各反應器內的磷矽玻璃(PSG)薄膜在深度方向上之磷濃度的曲線圖。STD RC1和STD RC2表示在該比較範例中的該第一反應器和該第二反應器。圖18為顯示根據範例1沉積於各反應器內的磷矽玻璃(PSG)薄膜在深度方向上之磷濃度的曲線圖。ALT RC1和ALT RC2表示在範例1中的該第一反應器和該第二反應器。如從這些圖示可看到，當該循環從在範例1中的該等第一和第二反應器交替開始時，未偵測到在該等第一與第二反應器之間該薄膜中之摻雜物濃度的顯著偏差(參見c和d)，而當該循環總是從該第一反應器開始時，則偵測到在該等第一與第二反應器之間該薄膜中之摻雜物濃度的顯著偏差(參見a和b)。
熟習此項技術者應可理解可做到眾多和各種修飾例而不悖離本發明之精神。因此，應可清楚理解本發明之該等形式僅為例示性且不欲限制本發明之範疇。
1、2‧‧‧反應器
3‧‧‧自動壓力控制器
4‧‧‧排氣泵；泵
5、6‧‧‧質量流量控制器
7‧‧‧瓶子(第一氣體源)
8‧‧‧瓶子(第二氣體源)
9‧‧‧第一氣體管線
10‧‧‧第二氣體管線
11‧‧‧氧氣質量流量控制器
12‧‧‧氬氣質量流量控制器
13‧‧‧氦氣質量流量控制器
14‧‧‧射頻產生器
15‧‧‧開關
17‧‧‧進氣管線
16、18、20‧‧‧氣體管線
v1-v10、v21-v42‧‧‧閥門
RC1‧‧‧反應器1
RC2‧‧‧反應器2
MB‧‧‧匹配盒
BTL‧‧‧瓶子

Claims (20)

  1. 一種執行共享一第一氣體源和一第二氣體源的多反應器之一致性處理的方法，各反應器皆具有來自該第一氣體源之一第一氣體、來自該第二氣體源之一第二氣體、和一沖洗氣體所透過引入該反應器的一進氣管線，其中在各反應器內所實施一目標處置皆相同，前述方法包含：(i)以該第一氣體供給到該等多反應器之一然後供給到該等多反應器之另一之一供給次序，透過該等各自進氣管線將該第一氣體供給到該等多反應器；(ii)以該第二氣體供給到該等多反應器之一然後供給到該等多反應器之另一之一供給次序，透過該等各自進氣管線將該第二氣體供給到該等多反應器；(iii)在該第一氣體之每次供給後和該第二氣體之每次供給後皆透過該等各自進氣管線將該沖洗氣體供給到該等多反應器，以便從該等多反應器和該等進氣管線分別清除該第一氣體和該第二氣體；以及(iv)連續重複步驟(i)至(iii)以完成該等多反應器之該目標處置，其中該第一氣體或該第二氣體中至少一者之該供給次序，在該第一氣體或該第二氣體中該至少一者之該供給重複時改變。
  2. 如申請專利範圍第1項之方法，其中一個循環係由步驟(i)至(iii)構成，且在步驟(iv)中該循環重複，其中該第一氣體或該第二氣體中至少一者之該供給次序每一循環皆改變。
  3. 如申請專利範圍第2項之方法，其中該第二氣體之該供給次序每一循環皆改變，而該第一氣體之該供給次序則未改變。
  4. 如申請專利範圍第2項之方法，其中各該第一氣體和該第二氣體之該供給次序每一循環皆改變。
  5. 如申請專利範圍第1項之方法，其中一個循環係由步驟(i)至(iii)構成，且步驟(ii)在該循環中重複，其中該第二氣體之該供給次序當步驟(ii)在該循環中重複時改變，前述循環在步驟(iv)中重複。
  6. 如申請專利範圍第1項之方法，更包含(iiia)在每個步驟(iii)後皆在該等多反應器中施加射頻(RF)功率。
  7. 如申請專利範圍第6項之方法，其中射頻功率係順序或同時施加於該等多反應器。
  8. 如申請專利範圍第6項之方法，其中該等多反應器共享產生射頻功率的一射頻產生器。
  9. 如申請專利範圍第6項之方法，其中該目標處置係藉由電漿輔助原子層沉積(Plasma-enhanced atomic layer deposition，PEALD)的一薄膜之沉積。
  10. 如申請專利範圍第1項之方法，其中該第一氣體之一供給速率較該第二氣體之一供給速率更快兩倍或多倍。
  11. 如申請專利範圍第1項之方法，其中該第一氣體源和該第二氣體源包括分別存放化合物液體的瓶子，其汽化氣體分別為該第一氣體和該第二氣體。
  12. 如申請專利範圍第11項之方法，其中來自該第一氣體源的一第一氣體管線分枝並連接到該等多反應器之各該等進氣管線，且來自該第二氣體源的一第二氣體管線分枝並連接到該等多反應器之各該等進氣管線，其中該第一氣體和該沖洗氣體係透過該第一氣體管線、從中所分枝出該等管線、和該等多反應器之該等進氣管線引入該等多反應器，而該第二氣體和該沖洗氣體係透過該第二氣體管線、從中所分枝出該等管線、和該等多反應器之該等進氣管線引入該等多反應器，其中各分枝管線皆設置有一閥門，且在步驟(i)至(iii)中所定義該等氣體流量係使用各閥門加以控制。
  13. 如申請專利範圍第12項之方法，其中該沖洗氣體透過該第一氣體管線單獨或與該第一氣體一起連續流動，而該沖洗氣體透過該第二氣體管線單獨或與該第二氣體一起連續流動。
  14. 如申請專利範圍第1項之方法，其中該等多反應器為兩個反應器。
  15. 如申請專利範圍第1項之方法，其中該等多反應器共享一排氣系統，且各反應器之該壓力使用該排氣系統加以控制。
  16. 如申請專利範圍第1項之方法，其中該等多反應器各皆包含另一氣體管線，透過其將一添加氣體或惰性氣體供給到該等多反應器。
  17. 一種執行多反應器之一致性處理的方法包含：(a)根據實施該等步驟的該等反應器之該次序實施由各反應器內步驟所組成的一循環；然後(b)在改變實施該等步驟的該等反應器之該當下先前次序後，實施各反應器內該等步驟；然後(c)重複製程(b)直到在該等多反應器完成一目標處置，在各反應器內一基板上所實施的前述目標處置皆相同。
  18. 如申請專利範圍第17項之方法，其中該等步驟包括供給一第一氣體之一步驟和供給一第二氣體之一步驟。
  19. 如申請專利範圍第18項之方法，其中該等第一和第二氣體係透過一第一共用進氣管線供給到該等反應器之一，且該等第一和第二氣體係透過一第二共用氣體管線供給到該等反應器之另一，其中該第一氣體係供給到分枝並連接到該等第一和第二共用進氣管線的一第一氣體管線，且該第二氣體係供給到分枝並連接到該等第一和第二共用進氣管 線的一第二氣體管線。
  20. 如申請專利範圍第17項之方法，其中該目標處置係藉由電漿輔助原子層沉積(PEALD)的一薄膜之沉積。
TW104107876A 2014-03-18 2015-03-12 執行氣體系統共享多反應器之一致性處理的方法 TWI670390B (zh)

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