TWI726478B - 使用增強擴散製程之膜沉積 - Google Patents

使用增強擴散製程之膜沉積 Download PDF

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TWI726478B
TWI726478B TW108140559A TW108140559A TWI726478B TW I726478 B TWI726478 B TW I726478B TW 108140559 A TW108140559 A TW 108140559A TW 108140559 A TW108140559 A TW 108140559A TW I726478 B TWI726478 B TW I726478B
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江施施
寇迪斯 勒施基斯
帕拉米特 曼納
亞伯亥吉特 馬里克
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美商應用材料股份有限公司
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Abstract

本文所述的實施例關於可使用操作以維持超大氣壓力(例如，大於大氣壓力的壓力)的腔室而執行的無縫間隙填充與接縫癒合的方法。一實施例包括將具有形成在基板的表面中的一或多個特徵的基板定位在處理腔室中並將基板的一或多個特徵暴露於在約1巴或更大的壓力之至少一前驅物。另一實施例包括將具有形成在基板的表面中的一或多個特徵的基板定位在處理腔室中。一或多個特徵的每一者具有材料的接縫。材料的接縫暴露於在約1巴或更大的壓力之至少一前驅物。

Description

使用增強擴散製程之膜沉積
本發明的實施例大體上關於半導體製造處理，且更具體地，關於用於間隙填充半導體裝置的特徵的方法。
對於許多半導體裝置製造處理，需要填充半導體裝置的特徵。習知地，使用在次大氣壓力下的化學氣相沉積(CVD)。然而，因為不均勻的沉積速率，在次大氣壓力下的沉積速率在特徵之間形成接縫。此接縫在後固化處理期間被進一步打開並最終致使產量降低或甚至半導體裝置故障。因此，需要用於間隙填充與接縫癒合半導體裝置的特徵的方法，其可提供無縫膜成長。
在一實施例中，提供填充基板上的特徵的方法。此方法包括將具有形成在材料的表面中的一或多個特徵的基板定位在處理腔室中，此材料形成在基板上，將一或多個特徵暴露於在約1巴或更大的壓力之至少一前驅物，及在一或多個特徵上方形成間隙填充層以填充一或多個特徵，其中間隙填充層包含含矽膜或含碳間隙填充層中至少一者。
在另一實施例中，提供填充基板上特徵的方法。此方法包括將具有形成在材料的表面中的一或多個特徵的基板定位在處理腔室中，此材料安置在基板上。一或多個特徵中至少一者包括安置在一或多個特徵上方的材料與安置在材料中的接縫。此材料暴露於在約1巴或更大壓力之至少一前驅物。此接縫以由此至少一前驅物形成的填充材料填充，接縫填充包括含矽接縫填充層或含碳接縫填充層中至少一者。
在又另一實施例中，提供填充形成在基板上的特徵的方法。此方法包括將含有矽或碳中至少一者的前驅物流入含有基板的處理腔室的處理區。安置在含有基板的處理區內的前驅物的壓力維持在約1巴或更大。特徵或接縫安置在基板上，基板安置在含有前驅物的處理區內，特徵或接縫分別被間隙填充或癒合。
本文所述的實施例包括無縫間隙填充與接縫癒合的方法。將在之後描述本文所述的實施例，關於無縫間隙填充與接縫癒合的方法，其可使用操作以維持超大氣壓力(例如，大於大氣壓力的壓力)的腔室而執行。超大氣壓力處理有利地容許在事先沉積的材料內的接縫被填充或癒合。本文所述的超大氣壓力處理另外提供無縫間隙填充的方法，其中結構被填充，而無接縫形成，且改善膜一致性。實質上無縫或接縫癒合材料可接著利用以產生更多堅固與更佳效以的電子裝置。本文所述的設備說明是示例性的，且不應被理解或解釋為限制本文所述實施方式的範疇。
圖1是適用於執行本文所述的無縫間隙填充與接縫癒合的方法之腔室100的簡化正面剖面視圖。料想本文所述的無縫間隙填充與接縫癒合的方法可替代地實行在其他腔室中。腔室100具有主體110，帶有外表面112與內表面113，內表面113圍住處理區115。腔室100具有門120，設置以可密封地圍住主體110內的處理區115，使得當門210開啟時，可進入處理區115。使用超大氣壓密封122以將門120密封於主體110，以將處理區115密封用於處理。
腔室100具有穿過主體110的埠117。埠117具有穿過其中的管118，其耦接至加熱器119。管118的一端連接至處理區115。管118的另一端分叉進入入口導管157與出口導管161。入口導管157經由隔離閥155流體地連接至氣體面板150。入口導管157耦接至加熱器158。出口導管161經由隔離閥165流體地連接至凝結器160。出口導管161耦接至加熱器162。加熱器119、158與162設置以分別將流通過管118、入口導管157與出口導管161的處理氣體維持在高於凝結點的溫度，使得處理氣體不凝結形成液體。流通過管118、入口導管157與出口導管161的處理氣體的溫度保持在高於凝結點的溫度，但不會由於將壓力增加超過預定限值而危及腔室的結構完整性。預定壓力限值可為25巴或更高，諸如50巴或更高、或100巴或更高。在一實施例中，溫度在處理氣體的凝結點與約攝氏250度之間。在另一實施例中，溫度保持在處理氣體的凝結點與約攝氏350度之間。在另一實施例中，溫度保持在處理氣體的凝結點上的任何溫度，只要由溫度增加造成的處理腔室內的壓力不超過預定壓力承載閾值。加熱器119、158與162由電源145供電。
氣體面板150設置以提供加壓下的處理氣體進入入口導管157用於通過管118傳送進入處理區115。導入處理區115的處理氣體的壓力由耦接至主體110的壓力感測器114監測。凝結器160流體地耦接至冷卻流體並設置以凝結在從處理區115移除並通過管118之後流通過出口導管161的氣態產物。凝結器160將氣態產物從氣相轉變為液相。泵170流體地連接至凝結器160並從凝結器160將液化產物泵抽出。氣體面板150、凝結器160與泵170的操作藉由控制器180來控制。
隔離閥155與165設置以一次僅容許一種流體流通過管118進入處理區115。當隔離閥155開啟時，隔離閥165關閉，使得一處理氣體流通過入口導管157進入處理區115，防止處理氣體流進凝結器160。另一方面，當隔離閥165開啟時，隔離閥155關閉，使得氣態產物從處理區115移除並流通過出口導管161，防止氣態產物流進氣體面板150。
一或多個加熱器140安置在主體110上並設置以加熱腔室100內的處理區115。加熱器140由電源145供電。透過由溫度感測器116接收的回饋，藉由控制器180控制給加熱器140的功率。溫度感測器116耦接至主體110並監測處理區115的溫度。
耦接至致動器(未示出)的匣130被移動進出處理區115。匣130具有頂表面132、底表面134、與壁136。匣130的壁136具有複數個基板存儲槽138。每個基板存儲槽138沿著匣130的壁136均勻地間隔。每個基板存儲槽138設置以在其中固持基板135。匣130可具有多達五十個基板存儲槽138用於固持基板135。匣130提供用於將複數個基板135移送進出腔室100及用於在處理區115中處理複數個基板135兩者的有效載具。雖然圖1中所述的腔室100設置以處理批次的複數個基板，但腔室100可替換地設置以在腔室100內一次處理單一基板。
控制器180控制腔室100的操作。控制器180控制氣體面板150、凝結器160、泵170、隔離閥155與隔離閥165及電源145的操作。控制器180也通訊地連接至溫度感測器116、壓力感測器114與冷卻通道124。控制器180包括中央處理單元(CPU)182、記憶體184、及支持電路186。CPU 182可為可使用在工業設定中的任何形式的通用電腦處理器。記憶體184可為隨機存取記憶體、唯讀記憶體、軟碟、或硬碟機、或其他形式的數位存儲。支持電路186習知地耦接至CPU 182且可包括快取、時鐘電路、輸入/輸出系統、電源、及類似物。
腔室100提供用於無縫間隙填充與接縫癒合的方法之超大氣壓力。此方法利用在經由腔室100提供的超大氣壓力下的化學氣相沉積(CVD)。超大氣壓力維持在腔室100中，同時將至少一基板135暴露至處理區115中的處理氣體，處理區115維持在約1巴至約100巴的範圍內，諸如約1巴至約50巴，諸如約1巴至約20巴，例如約5巴至約15巴。在另一實例中，處理腔室內的壓力維持在約12巴至約50巴的範圍內，諸如約12巴至約20巴，例如約12巴至約15巴。在CVD期間處理氣體存在下之超大氣壓力的應用促進無縫間隙填充與接縫癒合。在一實施例中，腔室100將處理區115與基板135維持在約攝氏150度至約攝氏800度的範圍內的溫度。在一實施例中，基板135的溫度與處理區115的溫度不同。
圖2是具有沉積在基板的一或多個特徵上方以填充一或多個特徵的材料之基板的示意剖面視圖。基板135包括形成在基板135上的層202(諸如含矽層或含碳層)中的一或多個特徵204(顯示為三個高深寬比溝槽)。基板135通常為用於處理的任何合適基板，包括但不限於矽(Si)基板及/或鍺(Ge)基板，且可包括其他元素，諸如，氧(O)、氮(N)、及碳(C)。材料206習知地沉積在一或多個特徵204上方。習知沉積處理的實例包括但不限於化學氣相沉積(CVD)、電漿增強CVD(PECVD)、原子層沉積(ALD)、及電漿增強ALD(PEALD)。然而，習知處理在材料206的沉積期間造成形成在一或多個特徵204中的一或多個接縫208。一或多個接縫208也可描述為藉由間隙填充期間之溝槽或類似特徵的不完全填充所致使的材料206內的小間隙或孔洞。換言之，接縫208不是刻意形成的溝槽或類似的刻意形成的特徵。一或多個接縫208暴露於材料206的表面，使得接縫208的至少一端暴露於處理區115。接縫208可為形成在層202中特徵204的中央向下的薄接縫且可為變動的深度與厚度。在另一實施例中，接縫208可只形成在某些特徵204中，使得並非所有特徵204具有接縫208。接縫208可在特徵內偏離中央並可包括各種形狀與尺寸。若留下不處理，在進一步處理基板135的期間，一或多個接縫208通常會開啟，致使有缺陷的裝置效能。
圖3是間隙填充基板的特徵之方法300的流程圖。為了易於解釋，將參照圖1、圖4A、與圖4B來說明圖3。然而，將注意到可連同方法300利用不同於圖1的腔室100的腔室。圖4A與圖4B是根據方法300的基板的示意剖面視圖。
在操作301，基板401定位在用於處理的環境中，諸如腔室中。在一實例中，複數個基板401定位為成批地在腔室100中處理。如圖4A所示，基板401具有形成在基板401上的層402(諸如含矽層或含碳層)中的一或多個特徵404(顯示為三個高深寬比溝槽)。在一實施例中，裝載在匣130上的複數個基板401移送進入腔室100的處理區115。接著關閉門120以密封腔室100。腔室100的處理區115被泵抽並以非反應性氣體淨化。在淨化處理區之後，增加壓力至稍微高於1 atm絕對壓力，諸如約1 atm至約2 atm，諸如約1 atm至約1.5 atm或約1 atm至約1.1 atm。加壓腔室100的處理區115以將腔室100變為用於間隙填充一或多個特徵404的超大氣壓腔室。在一實施例中，在進入腔室之前，入口導管157與管118內的前驅物加熱至預定溫度。腔室可為相對冷卻的，使得腔室的溫度大約與導管157與管118內加熱的前驅物為相同溫度。在此實施例中，在前驅物導入之後加熱腔室，使得藉由溫度增加而致使壓力增加，直到腔室達到預定處理溫度。在另一實施例中，將前驅物導入已經在處理溫度的預加熱腔室。在此實施例中，壓力增加至少部分地歸因於腔室內前驅物的導入與加熱。
在操作302，基板暴露於前驅物且間隙填充層400沉積在基板401的一或多個特徵404上方以填充一或多個特徵404，如圖4B所示。藉由在超大氣壓力的CVD沉積間隙填充層400。在一實施例中，超大氣壓力在約1巴至約50巴的範圍內，諸如約1巴至約20巴，例如約5巴至約15巴。在另一實施例中，處理腔室內的超大氣壓力維持在約12巴至約50巴的範圍內，諸如約12巴至約20巴，例如約12巴至約15巴。在一實施例中，至少一前驅物導入在超大氣壓力的腔室100的處理區115。在某些實施例中，至少一前驅物可導入在約大氣壓力的腔室100的處理區115且壓力增加以獲得預定處理腔室壓力。如圖4B所示，間隙填充層400沉積在基板401的一或多個特徵404上方以填充一或多個特徵404，而沒有形成在一或多個特徵404中的一或多個接縫(如圖2所繪示的層202中的元件符號208)。沉積的無一或多個接縫208的間隙填充層400造成改善的裝置效能。
在一實施例中，間隙填充層400是含X材料膜且沉積間隙填充層400包括將基板401的一或多個特徵404暴露於含X材料前驅物，其中X是一種元素。X的合適實例為但不限於矽與碳、等等。在安置在腔室100內之前或當安置在腔室100內時，可以可選地加熱含X材料前驅物。
在一實施例中，間隙填充層400是含矽膜且沉積間隙填充層400包括將基板401的一或多個特徵404暴露於至少一含矽前驅物。合適的含矽前驅物的實例包括但不限於矽烷(SiH4 )、二矽烷(H6 Si2 )、二氯矽烷(DCS)、三矽烷(H8 Si3 )、四矽烷(Si4 H10 )、四乙基正矽酸鹽(Si(OC2 H5 )4 )、三甲基胺(TMA)、二甲矽烷(C2 H8 Si)、四甲基二矽烷(((CH3 )2 SiHSiH(CH3 )2 )、六甲基二矽烷((Si(CH3 )3 )2 )、六甲基二矽氧(HMDSO)、及三矽基-戊烷(C8 H19 NSi)的一者或多者。在一實施例中，經由腔室100的部件可選地加熱至少一含矽前驅物。
在另一實施例中，間隙填充層400是含碳膜且沉積間隙填充層400包括將基板401的一或多個特徵404暴露於至少一含碳前驅物。合適的含碳前驅物的實例包括但不限於甲烷(CH4 )、乙炔(C2 H2 )、丙烯(C3 H6 )、四乙基正矽酸鹽(Si(OC2 H5 )4 )、三甲基胺(TMA)、二甲矽烷(C2 H8 Si)、四甲基二矽烷(((CH3 )2 SiHSiH(CH3 )2 )、六甲基二矽烷((Si(CH3 )3 )2 )、及六甲基二矽氧(HMDSO)、三矽基-戊烷(C8 H19 NSi)、其他烯烴、及其他乙烯基碳氫化合物的一者或多者。在一實施例中，經由腔室100的部件可選地加熱至少一含碳前驅物。
在基板401的一或多個特徵404上方沉積間隙填充層400發生在處理區115中溫度介於約攝氏150度(°C)與約450°C之間及基板401的溫度介於約200°C與約800°C之間。在一實施例中，一或多個特徵404暴露持續約1分鐘至約180分鐘的期間。以約100 sccm至約2000 sccm的流率提供至少一含矽前驅物。以約100 sccm至約2000 sccm的流率提供至少一含碳前驅物。在一實施例中，300-400°C的溫度與約1巴至約10巴的超大氣壓力將造成間隙填充層400，其為共形膜，如圖4B所示。在另一實施例中，500-800°C的溫度與約1巴至約10巴的超大氣壓力將造成間隙填充層400，其為非共形的，諸如由下而上的沉積膜。 在某些實施例中，間隙填充層400可為低含氫膜。在某些實施例中，間隙填充層400可為具有在膜內實質上無氫濃度的膜。在某些實施例中，間隙填充層400建構非晶矽膜。在某些實施例中，接縫填充層600建構非晶碳膜。在某些實施例中，接縫填充層600包含含矽間隙填充層或含碳間隙填充層中至少一者。
圖5是用於填充安置在基板的一或多個特徵上方的材料的接縫之方法500的流程圖。為了易於解釋，將參照圖1、圖2、與圖6來說明圖5。然而，將注意到可連同方法500一道利用不同於圖1的腔室100的腔室。圖6是根據方法500的基板的示意剖面視圖。
在操作501，提供基板135進入用於處理的位置或環境，諸如腔室。在一實例中，複數個基板135定位為成批地在腔室100中處理。在另一實例中，在腔室100中一次處理一個基板135。如圖2所示，基板135具有材料206的一或多個接縫208。換言之，安置在基板135上的材料206包括一或多個接縫208。材料206安置在形成在基板135的層202中的一或多個特徵204上方。在一實施例中，基板135裝載在匣130上進入腔室100的處理區115。接著關閉門120以密封腔室100。加壓腔室100的處理區115以將腔室100變成用於填充材料206的接縫208的超大氣壓腔室。
在操作502，接縫填充層600沉積在基板135的一或多個接縫208中以填充一或多個接縫208，如圖6所示。藉由在超大氣壓力之CVD沉積接縫填充層600。合適前驅物使用於超大氣壓力且被驅使進入一或多個特徵204內的接縫208，使得前驅物被驅使進入低壓接縫。此助於使得前驅物能夠進入接縫208以在接縫208內形成接縫填充層600並因而癒合接縫208。接縫填充層600形成在暴露於材料206的表面之接縫內。在一實施例中，超大氣壓力在約1巴至約50巴的範圍內，諸如約1巴至約20巴，例如約5巴至約15巴。在另一實例中，處理腔室內的壓力維持在約12巴至約50巴的範圍內，諸如約12巴至約20巴，例如約12巴至約15巴。在一實施例中，至少一前驅物導入在超大氣壓力之腔室100的處理區115。如圖6所示，接縫填充層600沉積在一或多個接縫208內以填充一或多個接縫208，而無額外接縫形成在接縫208中。諸如本文所述的使用高壓力作為驅使力並容許接縫填充層600填充接縫208。在某些實施例中，料想以接縫填充層600填充接縫208也會致使某些接縫填充層600沉積在材料206上，於接縫208之外並在材料206頂上。此部分的接縫填充層600之後可經由其他基板處理方法而移除，諸如化學機械拋光或選擇性回蝕。
在一實施例中，材料206是含X膜且沉積接縫填充層600包括將基板135的一或多個接縫208暴露於含X前驅物，其中X是一元素。X的合適實例為但不限於矽與碳，等等。可在腔室100內沉積之前或在腔室100內沉積時，可選地加熱含X前驅物。含X膜可類似於材料206或間隙填充層400。也可藉由含X前驅物與材料206的反應創造含X膜。
在一實施例中，材料206含有矽且沉積接縫填充層600包括將一或多個接縫208暴露於至少一含矽前驅物。接縫填充層600可為由含矽前驅物形成的含矽層。合適的含矽前驅物的實例包括但不限於矽烷(SiH4 )、二矽烷(H6 Si2 )、二氯矽烷(DCS)、三矽烷(H8 Si3 )、四矽烷(Si4 H10 )、四乙基正矽酸鹽(Si(OC2 H5 )4 )、三甲基胺(TMA)、二甲矽烷(C2 H8 Si)、四甲基二矽烷(((CH3 )2 SiHSiH(CH3 )2 )、六甲基二矽烷((Si(CH3 )3 )2 )、六甲基二矽氧(HMDSO)、及三矽基-戊烷(C8 H19 NSi)的一者或多者。在一實施例中，經由腔室100的部件可選地加熱至少一含矽前驅物。
在另一實施例中，材料206含有碳且沉積接縫填充層600包括將一或多個接縫208暴露於至少一含碳前驅物以形成含碳接縫填充層600。合適的含碳前驅物的實例包括但不限於甲烷(CH4 )、乙炔(C2 H2 )、丙烯(C3 H6 )、四乙基正矽酸鹽(Si(OC2 H5 )4 )、三甲基胺(TMA)、二甲矽烷(C2 H8 Si)、四甲基二矽烷(((CH3 )2 SiHSiH(CH3 )2 )、六甲基二矽烷((Si(CH3 )3 )2 )、及六甲基二矽氧(HMDSO)、三矽基-戊烷(C8 H19 NSi)、其他烯烴、及其他乙烯基碳氫化合物的一者或多者。在一實施例中，經由腔室100的部件可選地加熱至少一含碳前驅物。
在某些實施例中，癒合接縫208包含將接縫填充層600沉積進入接縫208，使得接縫208填充具有接縫填充層600。沉積接縫填充層600發生在處理區115中的溫度介於約150°C與約450°C之間及基板135的溫度介於約200°C與約800°C之間。在一實施例中，一或多個接縫208暴露持續約1分鐘至約60分鐘的期間。以約50 sccm至約1000 sccm的流率提供至少一含矽前驅物。以約50 sccm至約1000 sccm的流率提供至少一含碳前驅物。在某些實施例中，接縫填充層600可為含氫層。在某些實施例中，接縫填充層600在層內可實質上不具有氫。在某些實施例中，接縫填充層600建構非晶矽層。在某些實施例中，接縫填充層600建構非晶碳層。在某些實施例中，接縫填充層600包含含矽接縫填充層或含碳接縫填充層中至少一者。在以接縫填充層600癒合接縫208之後，某些過量接縫填充層600也可沉積在材料206頂上與在接縫208之外。此過量可在之後的移除處理期間移除。此移除可批次地完成或以單一晶圓處理完成。
本發明的實施例提供半導體裝置特徵的無縫間隙填充與接縫癒合的方法。由於間隙填充與接縫癒合是無縫的，所以改善半導體裝置的整體效能。
儘管前述關於本發明的實施例，但在不背離本發明的基本範疇可構思出本發明的其他與進一步實施例，且本發明的範疇由之後的申請專利範圍所界定。
100:腔室 110:主體 112:外表面 113:內表面 114:壓力感測器 115:處理區 116:溫度感測器 117:埠 118:管 119:加熱器 120:門 122:超大氣壓密封 124:冷卻通道 130:匣 132:頂表面 134:底表面 135:基板 136:壁 138:基板存儲槽 140:加熱器 145:電源 150:氣體面板 155:隔離閥 157:入口導管 158:加熱器 160:凝結器 161:出口導管 162:加熱器 165:隔離閥 170:泵 180:控制器 182:CPU 184:記憶體 186:支持電路 202:層 204:特徵 206:材料 208:接縫 300:方法 301:操作 302:操作 400:間隙填充層 401:基板 402:層 404:特徵 500:方法 501:操作 502:操作 600:接縫填充層
為了可詳細理解本發明的上述特徵，藉由參照實施例，其中某些實施例繪示在隨附圖式中，可獲得簡短總結於上之本發明的更具體的說明。然而，將注意到隨附圖式僅繪示範例實施例且因而不當作限制本發明的範疇，且本發明的範疇可容許其他等效實施例。
圖1是根據一實施例之腔室的正面剖面視圖。
圖2是根據一實施例之基板的示意剖面視圖，繪示出習知地安置在基板的特徵中之材料層中的接縫。
圖3是根據一實施例之間隙填充基板的特徵之方法的流程圖。
圖4A與圖4B是根據一實施例之按照間隙填充基板的特徵之方法的基板之示意剖面視圖。
圖5是根據一實施例之填充安置在基板的一或多個特徵上方之材料的接縫的方法的流程圖。
圖6是根據一實施例之按照填充安置在基板的一或多個特徵上方之材料的接縫的方法之基板的示意剖面視圖。
為了易於理解，已儘可能使用相同元件符號指代圖式中共通的相同元件。料想一實施例的元件與特徵可有利地併入其他實施例中而不需進一步闡明。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
135:基板
202:層
204:特徵
206:材料
208:接縫
600:接縫填充層

Claims (20)

  1. 一種填充形成在一基板上的特徵的方法，該方法包含以下步驟： 將具有一或多個特徵的一基板定位在一處理腔室中，該一或多個特徵形成在一材料的一表面中，該材料形成在該基板上；將該一或多個特徵暴露於在1巴或更大的一壓力之至少一前驅物；及在該一或多個特徵上方形成一間隙填充層以填充該一或多個特徵，其中該間隙填充層包含一含矽膜或一含碳間隙填充層中至少一者。
  2. 如請求項1所述之方法，其中該壓力為1巴至50巴。
  3. 如請求項1所述之方法，其中該至少一前驅物為至少一含矽前驅物。
  4. 如請求項3所述之方法，其中該至少一含矽前驅物包含以下至少一者：矽烷(SiH4 )、二矽烷(H6 Si2 )、二氯矽烷(DCS)、三矽烷(H8 Si3 )、四矽烷(Si4 H10 )、四乙基正矽酸鹽(Si(OC2 H5 )4 )、三甲基胺(TMA)、二甲矽烷(C2 H8 Si)、四甲基二矽烷(((CH3 )2 SiHSiH(CH3 )2 )、六甲基二矽烷((Si(CH3 )3 )2 )、六甲基二矽氧(HMDSO)、及三矽基-戊烷(C8 H19 NSi)。
  5. 如請求項3所述之方法，該一或多個特徵暴露持續1分鐘至180分鐘的一期間。
  6. 如請求項1所述之方法，其中該間隙填充層構成一非晶矽膜或一非晶碳膜。
  7. 如請求項1所述之方法，其中該至少一前驅物為至少一含碳前驅物。
  8. 如請求項7所述之方法，其中該至少一含碳前驅物包含以下至少一者：甲烷(CH4 )、乙炔(C2 H2 )、丙烯(C3 H6 )、四乙基正矽酸鹽(Si(OC2 H5 )4 )、三甲基胺(TMA)、二甲矽烷(C2 H8 Si)、四甲基二矽烷(((CH3 )2 SiHSiH(CH3 )2 )、六甲基二矽烷((Si(CH3 )3 )2 )、及六甲基二矽氧(HMDSO)、三矽基-戊烷(C8 H19 NSi)。
  9. 如請求項1所述之方法，其中該至少一前驅物以50 sccm至1000 sccm的一流率提供。
  10. 如請求項1所述之方法，其中該處理腔室的溫度為150°C與450°C。
  11. 如請求項10所述之方法，其中該基板的溫度為200°C至800°C。
  12. 一種填充形成在一基板上的特徵的方法，該方法包含以下步驟： 將具有一或多個特徵的一基板定位在一處理腔室中，該一或多個特徵形成在安置在該基板上的一材料的一表面中；該一或多個特徵中至少一者包含安置在該一或多個特徵上方的一材料與安置在該材料中的一接縫；將該材料暴露於在1巴或更大的一壓力之至少一前驅物；及 以由該至少一前驅物形成的一填充材料填充該接縫，該接縫填充材料包含一含矽接縫填充層或一含碳接縫填充層的至少一者。
  13. 如請求項12所述之方法，其中將該材料暴露於該至少一前驅物進一步包含將該材料暴露於在1巴至50巴的一壓力之該至少一前驅物。
  14. 如請求項12所述之方法，其中將該材料暴露於該至少一前驅物進一步包含以下步驟： 將由該至少一前驅物衍生的一接縫填充層沉積在該材料上。
  15. 如請求項14所述之方法，其中該至少一前驅物包含以下至少一者：矽烷(SiH4 )、二矽烷(H6 Si2 )、二氯矽烷(DCS)、三矽烷(H8 Si3 )、四矽烷(Si4 H10 )、四乙基正矽酸鹽(Si(OC2 H5 )4 )、三甲基胺(TMA)、二甲矽烷(C2 H8 Si)、四甲基二矽烷(((CH3 )2 SiHSiH(CH3 )2 )、六甲基二矽烷((Si(CH3 )3 )2 )、六甲基二矽氧(HMDSO)、及三矽基-戊烷(C8 H19 NSi)。
  16. 如請求項14所述之方法，其中該至少一前驅物包含以下至少一者：甲烷(CH4 )、乙炔(C2 H2 )、丙烯(C3 H6 )、四乙基正矽酸鹽(Si(OC2 H5 )4 )、三甲基胺(TMA)、二甲矽烷(C2 H8 Si)、四甲基二矽烷(((CH3 )2 SiHSiH(CH3 )2 )、六甲基二矽烷((Si(CH3 )3 )2 )、及六甲基二矽氧(HMDSO)、三矽基-戊烷(C8 H19 NSi)。
  17. 如請求項12所述之方法，其中該處理腔室的溫度為150°C至450°C，及其中該基板的溫度為200°C至800°C。
  18. 如請求項12所述之方法，其中該至少一前驅物包含也存在於該材料中的一元素。
  19. 一種填充形成在一基板上的特徵的方法，該方法包含以下步驟： 將含有矽或碳中至少一者的一前驅物流入含有一基板的一處理腔室的一處理區；將安置在含有該基板的該處理區內的該前驅物的一壓力維持在一巴或更大；及 間隙填充一特徵或癒合一接縫，該特徵或該接縫安置一材料上，該材料安置於安置在含有該前驅物的該處理區內的該基板上。
  20. 如請求項19所述之方法，其中將該前驅物流入該處理區進一步包含以下步驟： 在該材料上沉積一接縫填充層。
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