KR20150007989A - 반응 챔버에서 아웃가싱을 감소시키는 방법 및 시스템 - Google Patents
반응 챔버에서 아웃가싱을 감소시키는 방법 및 시스템 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
Abstract
반응기의 반응 챔버 내에서 물질의 아웃가싱을 감소시키는 시스템 및 방법이 개시된다. 예시적인 방법들은, 상기 반응 챔버 내에서 배리어 층을 성막하는 것과 상기 반응 챔버의 표면 상의 종과 반응하도록 스캐빈징 전구체를 사용하는 것을 포함한다. 예시적인 시스템들은, 기상 증착 시스템, 이를테면 원자층 증착 시스템을 포함하고, 이는 시스템의 반응 챔버에 유체적으로 연결된 배리어 층 소스 및/또는 스캐빈징 전구체 소스를 포함한다.
Description
본 개시는 일반적으로 기상 (gas-phase) 반응 방법 및 시스템에 관한 것이다. 더 상세하게, 본 개시는 기상 반응 챔버에서 재료의 아웃가싱을 감소시키는 방법 및 시스템에 관한 것이다.
반도체 디바이스와 같은 전자 디바이스, 그리고 발광 및 태양광 디바이스와 같은 포토닉 디바이스 (photonic device) 는 종종, 다른 것들 중에서도, 재료의 박막을 기판 상에 성막하여 형성된다. 막을 성막하기 위한 기법들은 원자 층 증착 (ALD) 을 포함한다. ALD 는 여러 응용들에 바람직할 수도 있는데, 왜냐하면 ALD 프로세스들은 자기 제한적 (self-limiting) 이며, 기판 상으로의 재료의 정밀한, 컨포멀 성막 (conformal deposition) 을 가능하게 하기 때문이다.
원자층 증착은 통상적으로, 2개 이상의 전구체들을 사용한 막의 기상 증착을 포함하고, 여기서 하나 이상의 전구체들이, 예를 들어, 직접 또는 원격 플라즈마를 이용하여 활성화될 수도 있다. 통상적인 ALD 프로세스는 2개의 전구체들을 사용한 성막을 포함한다. 이 경우에, 시퀀스는 종종, 반응 챔버에서 기판의 표면 상의 종과 반응하도록 제 1 전구체에 기판의 표면을 노출시키는 단계, 제 1 전구체를 제거하기 위하여 반응 챔버를 퍼징하는 단계, 반응 챔버에서 제 1 전구체로부터의 종과 반응하도록 제 2 전구체에 기판의 표면을 노출시키는 단계, 및 반응 챔버로부터 제 2 전구체를 제거하는 단계를 포함한다. 각 전구체가, 반응 챔버내로의 다른 전구체의 도입전에 충분히 퍼징되지 않으면, 원하지 않은 기상 반응이 일어날 수도 있고, 이는, 차례로, 원하지 않은 입자 형성 또는 성막된 막의 불균일성을 야기할 수도 있다. 추가적으로 또는 대안적으로, 전구체의 불충분한 퍼징은, 후속하여 도입되는 전구체의 고갈을 초래할 수 있다.
ALD 증착 프로세스 동안, 하나 이상의 전구체들은 반응 챔버의 표면 상에 형성된 막 상에 흡착되거나 또는 막 내에 흡수되고 후속하여 다른 전구체가 반응 챔버로 도입되는 사이클 동안 아웃가스될 수도 있다. 이 경우에, 하나의 전구체가, 다른 것이 반응 챔버를 통해 흐를 때, 아웃가스됨에 따라, 원하지 않은 기상 반응들이 일어날 수도 있다.
예로써, ALD가 기판의 표면 상에 금속 산화물 막을 형성하는데 사용될 때, 금속 산화물 막을 형성하는 방법은, 기판 상의 화학 종 (chemical species) 과 반응하도록 금속 함유 전구체에 기판 표면을 노출시키는 단계, 반응 챔버를 퍼징하는 단계, 산소, 활성 산소, 오존, 물 또는 알코올 등의 산화제에 기판 표면을 노출시키는 단계, 및 그 후에 반응 챔버를 퍼징하는 단계를 포함할 수도 있다. 이들 단계들은, 원하는 양의 금속 산화물이 기판의 표면 상에 형성될 때까지 반복된다. 이들 단계들 동안, 금속 산화물 막 재료가 또한, 기판 표면에 더하여 반응 챔버 상의 표면들 상에 성막된다. 산화제가 반응 챔버의 표면 상에 성막된 재료내에 흡수되거나 또는 그 재료 상에 흡착되는 경우에, 산화제는 퍼지 단계 동안 반응 챔버로부터 완전히 퍼징되지 않을 수도 있고, 따라서 금속 함유 전구체에 기판 표면을 노출시키는 후속 단계 동안 아웃가스될 수도 있다. 산화제가 아웃가스될 때, 그것은, 금속 함유 전구체에 기판 표면을 노출시키는 단계 동안 금속 함유 전구체와 반응하여, 기판 표면에 걸쳐 막의 원하지 않은 불균일성 및/또는 반응 챔버 내의 입자 형성을 초래할 수도 있다.
전구체의 아웃가싱 (outgassing) 을 완화시키기 위하여, ALD 프로세스는 상대적으로 저압, 예를 들면, 0.01 Torr 미만에서 실행되어, 전구체들의 퍼징을 향상시킬 수도 있다. 하지만, 그러한 저압으로 반응 챔버의 동작 압력을 감소시키는 것은 일반적으로 ALD 프로세스의 스루풋을 감소시키고 따라서 이들 압력에서 동작하는 시스템 및 방법들은 디바이스의 제조에 적합하지 않다. 따라서, 기상 반응 동안 반응 챔버로부터 아웃가싱을 완화시키기 위한 향상된 방법 및 시스템들이 요망된다.
본 개시의 요약
본 개시의 다양한 실시형태들은 반응기의 반응 챔버 내의 물질들의 아웃가싱을 완화시키기 위한 방법 및 시스템에 관한 것이다. 본 개시의 다양한 실시형태들이 종래 기술 방법 및 시스템들의 결점들을 다루는 방법들이 아래에서 더 자세히 논의되지만, 일반적으로, 본 개시는, 배리어 층을 제공하거나, 스캐빈징제 (scavenging agent) 를 사용하여 그렇지 않으면 아웃가스될 수도 있는 하나 이상의 물질들과 반응하게 하거나, 또는 다른 방법으로 반응 챔버 내에서 물질을 블로킹하여, 반응 챔버 내의 후속 프로세싱 동안 물질(들) 의 아웃가싱을 완화 또는 방지하기 위한 시스템 및 방법들을 제공한다.
본 개시의 다양한 실시형태들에 따르면, 물질의 아웃가싱을 감소시키는 방법은, 반응 챔버를 갖는 기상 반응기를 제공하는 단계, 반응 챔버 내의 표면 상에 배리어 층을 형성하는 단계, 반응 챔버 내의 기판의 표면 상에 재료를 성막하는 단계, 및 반응 챔버로부터 기판을 제거하는 단계를 포함한다. 배리어 층은, 예를 들어, 전이 금속 산화물 (예를 들면, TiO2, Ta2O5, HfO2, 또는 Al2O3 또는 SiO2), 전이 금속 질화물 (예를 들면, TiN), 전이 금속 산질화물 (예를 들면, TiON), 및/또는 전이 금속 탄화물 (예를 들면, TiC) 를 포함할 수도 있다. 배리어 층의 두께는 응용에 따라 달라질 수도 있고, 하나의 단층 (monolayer) 보다 더 크거나, 2개 단층보다 더 크거나, 또는 약 하나의 단층과 약 50 Å 사이, 약 5 Å 과 약 20Å 사이, 또는 약 10 Å 과 약 20 Å 사이에 있을 수도 있다. 이들 실시형태들의 다양한 양태들에 따르면, 기상 반응기를 제공하는 단계는 원자층 증착 (ALD) 반응기를 제공하는 단계를 포함한다. 다른 양태들에 따르면, 성막하는 단계는, 반응 챔버에 제 1 전구체를 제공하는 단계로서, 그 제 1 전구체는 제 1 표면 종을 형성하기 위하여 기판의 표면과 반응하는, 그러한 제 1 전구체를 제공하는 단계, 예를 들면, 저압 및/또는 캐리어 가스를 사용하여, 반응 챔버로부터 제 1 전구체를 퍼징하는 단계, 제 2 표면 종을 형성하기 위하여 제 1 표면 종과 반응하도록 반응 챔버에 제 2 전구체를 제공하는 단계, 및 반응 챔버로부터 제 2 전구체를 퍼징하는 단계를 포함한다. 그 방법들은, 기판 상에 (그리고 반응 챔버 내의 표면 상에) 성막된 재료가 란타늄 산화물, 마그네슘 산화물, 바륨 산화물, 스트론튬 산화물 또는 하나 이상의 전구체들을 흡수 또는 흡착하는 경향이 있는 다른 재료와 같은 흡습성 재료 (hygroscopic material) 를 포함할 때, 특히 유용할 수도 있다. 예시적인 방법들은, 반응 챔버 내의 배리어 층을 형성하지 않고서 제조된 유사한 막들과 비교하여, 기판 상에 성막된 재료의 두께 균일성을 향상시키고, 세정 사이클간의 반응 챔버 내의 실행의 수를 증가시키고, 더 높은 품질의 막들을 제조한다.
본 개시의 추가 실시형태들에 따르면, 기판 상에 재료를 성막시키기 위한 그리고 반응 챔버 내의 물질의 아웃가싱을 완화시키기 위한 시스템은, 반응 챔버, 반응 챔버에 유체적으로 연결된 제 1 전구체 소스, 반응 챔버에 유체적으로 연결된 제 2 전구체 소스, 반응 챔버에 유체적으로 연결된 퍼지 가스, 및 반응 챔버에 유체적으로 연결된 배리어 층 전구체를 포함하는, ALD 반응기와 같은 반응기를 포함한다. 이들 실시형태들의 예시적 양태들에 따르면, 시스템은, 기판이 반응 챔버로부터 제거된 후에 또는 기판이 반응 챔버로 진입하기 전에 반응 챔버 내의 표면 상에 배리어 층을 형성하도록 구성된다. 다른 양태들에 따르면, 배리어 층 전구체는, 예를 들면, 전이 금속 산화물 전구체, 전이 금속 질화물 전구체, 전이 금속 산질화물 전구체, 전이 금속 탄화물 전구체, 실리콘 산화물 전구체, 및 알루미늄 산화물 전구체들 중 하나 이상으로부터 선택될 수도 있다.
본 개시의 추가 실시형태들에 따르면, 반응 챔버 내에 물질의 아웃가싱을 감소시키는 방법은, 반응 챔버를 갖는 기상 반응기를 제공하는 단계, 반응 챔버 내의 기판의 표면 상에 (그리고 반응 챔버 내의 표면 상에) 재료를 성막하는 단계, 및 반응 챔버의 표면 상의 재료와 반응하도록 반응 챔버에 스캐빈징 전구체를 제공하는 단계를 포함한다. 이들 실시형태들의 다양한 양태들에 따르면, 스캐빈징 가스는, 예를 들면, 도우즈 제어 (dose control) 를 사용하여, 기판에 또는 기판 홀더에 도달하기 전에 소비 또는 고갈되거나 또는 실질적으로 소비 또는 고갈된다. 스캐빈징 전구체는, 예를 들어, 금속 할라이드 또는 유기금속 화합물, 이를테면 하프늄 염화물, 실리콘 염화물, 지르코늄 염화물 또는 TMA 일 수도 있다. 이들 실시형태들의 예시적인 양태들에 따르면, 표면 상에 재료를 성막하는 단계는, 제 1 표면 종을 형성하기 위하여 기판의 표면과 반응하도록 반응 챔버에 제 1 전구체를 제공하는 단계, 반응 챔버로부터 제 1 전구체를 퍼징하는 단계, 제 2 표면 종을 형성하기 위하여 제 1 표면 종과 반응하도록 반응 챔버에 제 2 전구체를 제공하는 단계, 및 제 2 전구체를 퍼징하는 단계를 포함한다. 이들 경우들에서, 스캐빈징 전구체를 제공하는 단계는, 제 1 전구체를 제공하는 단계 후에 및/또는 제 1 전구체를 퍼징하는 단계 전에 일어날 수도 있다. 다르게는, 스캐빈징 전구체를 제공하는 단계는, 제 1 전구체를 퍼징하는 단계 후에 일어날 수도 있다. 방법은 또한, 예를 들면, 제 2 전구체를 제공하는 단계 전에, 스캐빈징 전구체를 퍼징하는 단계를 포함할 수도 있다. 이들 실시형태들의 다양한 양태들에 따르면, 그 방법들은, 스캐빈징 전구체가 기판 상의 표면과 반응하는 것을 완화 또는 방지하기 위한 프로세스의 튜닝을 허용하는, 도우즈 프론트 모니터링 (dose front monitoring) 의 단계를 포함할 수도 있다. 즉, 방법은 기판의 상류 (upstream) 에서 스캐빈징 전구체의 전부 또는 거의 전부를 소비하도록 튜닝될 수도 있다.
본 개시의 추가 실시형태들에 따르면, 기판 상에 재료를 성막하고 반응 챔버 내의 물질의 아웃가싱을 완화시키기 위한 시스템은, 반응 챔버, 반응 챔버에 유체적으로 연결된 제 1 전구체 소스, 반응 챔버에 유체적으로 연결된 제 2 전구체 소스, 반응 챔버에 유체적으로 연결된 퍼지 가스, 및 반응 챔버에 유체적으로 연결된 스캐빈징 전구체 소스를 포함하는, ALD 반응기와 같은 반응기를 포함한다. 이들 실시형태들의 예시적 양태들에 따르면, 반응 챔버가 제 1 전구체에 노출되고, 반응 챔버가 제 1 전구체에 노출된 후에, 반응 챔버가 스캐빈징 전구체에 노출되고, 반응 챔버가 스캐빈징 전구체에 노출된 후에, 반응 챔버가 제 2 전구체에 노출된다. 이들 실시형태들에 따른 시스템은, 스캐빈징 전구체의 전부 또는 거의 전부가 기판의 상류에서 소비되도록, 시스템을 튜닝하기 위하여 하나 이상의 수정결정 미소저울 (quartz crystal microbalance) 과 같은 도우즈 프론트 모니터링 디바이스들을 포함할 수도 있다.
이전의 요약 및 다음의 상세한 설명은 오직 예시적이며 설명을 위한 것이고 본 개시 또는 청구된 발명을 한정하지 않는다.
본 개시의 실시형태들의 보다 완전한 이해는, 다음의 예시적인 도면들과 함께 고려될 때 상세한 설명 및 청구항들을 참조하는 것에 의해 도출될 수도 있다.
도 1은 본 개시의 예시적인 실시형태들에 따른 사용을 위한 시스템을 예시하고;
도 2는 본 개시의 예시적 실시형태들에 따른 물질의 아웃가싱을 감소시키기 위한 방법을 예시하고;
도 3은 본 개시의 예시적인 실시형태들에 따른 다른 시스템을 예시하고;
도 4는 본 개시의 예시적 실시형태들에 따른 반응 챔버의 일부를 예시하고;
도 5는 본 개시의 추가 예시적 실시형태들에 따른 반응 챔버의 다른 일부를 예시하고;
도 6은 본 개시의 또 추가의 예시적 실시형태들에 따른 물질의 아웃가싱을 감소시키기 위한 다른 방법을 예시하고;
도 7은 본 개시의 또 다른 예시적인 실시형태들에 따른 프로세스를 예시하고;
도 8은 본 개시의 추가 예시적인 실시형태들에 따른 다른 프로세스를 예시하고;
도면들에 있는 엘리먼트들은 간결성 및 명료성을 위해 예시되고 반드시 스케일 (scale) 대로 그려지지는 않았다는 것을 인식할 것이다. 예를 들면, 도면들에 있는 엘리먼트들의 일부의 치수들은 본 개시의 예시된 실시형태들의 이해를 향상시키는 것을 돕기 위해 다른 엘리먼트들에 비해 과장될 수도 있다.
도 1은 본 개시의 예시적인 실시형태들에 따른 사용을 위한 시스템을 예시하고;
도 2는 본 개시의 예시적 실시형태들에 따른 물질의 아웃가싱을 감소시키기 위한 방법을 예시하고;
도 3은 본 개시의 예시적인 실시형태들에 따른 다른 시스템을 예시하고;
도 4는 본 개시의 예시적 실시형태들에 따른 반응 챔버의 일부를 예시하고;
도 5는 본 개시의 추가 예시적 실시형태들에 따른 반응 챔버의 다른 일부를 예시하고;
도 6은 본 개시의 또 추가의 예시적 실시형태들에 따른 물질의 아웃가싱을 감소시키기 위한 다른 방법을 예시하고;
도 7은 본 개시의 또 다른 예시적인 실시형태들에 따른 프로세스를 예시하고;
도 8은 본 개시의 추가 예시적인 실시형태들에 따른 다른 프로세스를 예시하고;
도면들에 있는 엘리먼트들은 간결성 및 명료성을 위해 예시되고 반드시 스케일 (scale) 대로 그려지지는 않았다는 것을 인식할 것이다. 예를 들면, 도면들에 있는 엘리먼트들의 일부의 치수들은 본 개시의 예시된 실시형태들의 이해를 향상시키는 것을 돕기 위해 다른 엘리먼트들에 비해 과장될 수도 있다.
아래에 제공된 방법들, 및 시스템들의 예시적인 실시형태들의 설명은 단지 예시적이고 예시의 목적으로만 의도되고; 다음의 설명은 본 개시 또는 청구항의 범위를 제한하도록 의도되지 않는다. 또한, 언급된 특징 (feature) 들을 갖는 다수의 실시형태들의 기재는 추가 특징들을 갖는 다른 실시형태들 또는 언급된 특징들의 상이한 조합들을 포함하는 다른 실시형태들을 배제하도록 의도되지 않는다.
본 개시는 일반적으로 기상 반응기, 시스템 및 방법에 관한 것이다. 보다 구체적으로, 본 개시는, 반응 챔버의 내부 표면으로부터 물질들의 아웃가싱을 완화시키는, 예를 들면, 반응 챔버의 내부 표면 상에 성막된 재료로부터 아웃가싱을 완화시키는 반응기, 시스템 및 방법에 관한 것이다.
도 1은, 반응기 (102) 를 포함하는 시스템 (100) 을 예시한다. 예시된 예에서, 시스템 (100) 은, 제 1 전구체 소스 (104), 제 2 전구체 소스 (106), 배리어 층 전구체 소스 (108), 퍼지 가스 소스 (110), 선택적인 혼합기 (112), 선택적인 흡기 플레넘 (intake plenum) (114) 및 진공 소스 (116) 를 포함한다. 소스들 (104-110) 은, 라인들 (118-132) 및 밸브들 (134-140) 을 사용하여 혼합기 (112) 또는 반응기 (102) 에 연결될 수도 있다.
반응기 (102) 는 독립형 반응기이거나 또는 클러스터 툴의 부분일 수도 있다. 또한, 반응기 (102) 는, 성막 프로세스와 같은 특정 프로세스에 전용될 수도 있거나, 또는 반응기 (102) 는, 다른 프로세스들에, 예를 들면, 층 패시베이션 및/또는 식각 프로세싱에 사용될 수도 있다. 예를 들면, 반응기 (102) 는, ALD (atomic layer deposition) 프로세싱에 통상적으로 사용되는 반응기, 이를테면 ASM으로부터 이용가능한 Pulsar 3000 를 포함할 수도 있고, 직접 플라즈마 및/또는 원격 플라즈마 장치를 포함할 수도 있다. 플라즈마를 사용하는 것은 하나 이상의 전구체들의 반응성을 향상시킬 수도 있다. 하나의 예로써, 반응기 (102) 는 기판 (142) 상의 유전체 재료의 ALD 증착에 적합한 반응기를 포함한다. 시스템 (100) 에 적합한 예시적인 ALD 반응기는, 미국 특허 출원 공개 번호 US 2012/0266821에 기재되어 있고, 그의 내용은 이에 의해 참조로써 그 내용이 본 개시와 충돌하지 않는 범위로 여기에 원용된다. 반응기 (102) 의 반응 챔버 (144) 의 동작 압력은 다양한 인자들에 따라 달라질 수도 있다. 반응기 (102) 는 대기압 근처 또는 보다 저압에서 동작하도록 구성될 수도 있다. 예로써, 증착 및 퍼지 단계들 동안 반응기 (102) 의 동작 압력은, 약 0.01 Torr 내지 약 100 Torr 또는 약 1 Torr 내지 약 5 Torr 범위이다.
전구체 소스 (104) 의 예시적인 제 1 전구체들은, 예를 들어, 하나 이상의 유기금속 화합물 또는 금속 할라이드 화합물을 포함한다. 예로써, 전구체 소스는, 하프늄 염화물 (HfCl4) 및 트리메틸알루미늄 (TMA) 으로 이루어지는 군으로부터 선택되는 하나 이상의 화합물을 포함한다.
전구체 소스 (106) 의 예시적인 제 2 전구체들은, 산소, 활성 산소, 오존, 물 또는 알코올 등의 산화제를 포함한다. 구체적인 예로써, 전구체 소스 (106) 는 물을 포함한다.
배리어 층 소스 (108) 의 예시적인 전구체들은, 휘발성이 더 작은 화합물을 형성하기 위하여 소스 (104) 및/또는 소스 (106) 로부터 흡수 또는 흡착된 재료와 반응하는 하나 이상의 전구체들을 포함할 수도 있다. 소스 (108) 에 적합한 전구체들은 전이 금속 산화물, 전이 금속 질화물, 전이 금속 산질화물, 및 전이 금속 탄화물 재료 전구체를 포함한다. 구체적인 예로써, 전구체 소스 (108) 는, 금속 할라이드, 이를테면 HfCl4 을 포함한다.
퍼지 가스 소스 (110) 는 임의의 적합한 퍼지 또는 캐리어 가스를 포함할 수도 있다. 예시적인 가스들은 질소, 아르곤, 헬륨 및 수소를 포함한다.
시스템 (100) 은 가스 분배 시스템을 포함할 수도 있다. (예를 들면, 소스들 (104-110) 로부터) 가스들간에 빠른 전환을 허용하는 예시적인 가스 분배 시스템은, 2012년 4월 10일자로 발행되었고 발명의 명칭이 "Gas Mixer and Manifold Assembly for ALD Reactor" 인 Schmidt 이외에 대한 US 특허 번호 제8,152,922호에 제시되어 있고, 그의 내용은 이에 의해 참조로써 그 내용이 본 개시와 충돌하지 않는 범위로 여기에 원용된다. 가스 분배 시스템은, 예를 들어, 전구체 가스 및 캐리어 가스 (이는 퍼지 가스 소스 (108) 로부터의 퍼지 가스와 동일하거나 또는 상이할 수도 있다) 를, 가스가 플레넘 (114) 또는 반응기 (102) 에 도달하기 전에, 혼합하는데 사용될 수도 있다. 또한, (도 1의 화살표의 방향에서) 기판 (142) 을 가로지르는 수평 흐름으로 예시되었지만, 대안의 실시형태들에 따른 반응기들은 수직 흐름, 예를 들어, 샤워헤드로부터 나오고 실질적으로 기판 상으로 하방으로 흐르는 흐름을 포함할 수도 있다.
시스템 (100) 과 같은 시스템을 사용한 예시적인 ALD 증착 프로세스는, 제 1 표면 종을 형성하기 위하여 기판 (142) 의 표면 상에서 종과 반응하는 제 1 전구체 (예를 들면, 소스 (104) 로부터의 유기금속 화합물 또는 금속 할라이드 화합물) 에 반응기 (102) 의 반응 챔버 (144) 내의 기판 (142) 의 표면을 노출시키는 단계, (예를 들면, 소스 (110) 로부터 퍼지 가스를 사용하여) 제 1 전구체를 퍼징하는 단계, 제 2 표면 종을 형성하기 위하여 제 2 전구체 (예를 들면, 소스 (106) 로부터 물과 같은 산화제) 에 제 1 표면 종을 노출시키는 단계, 및 반응 챔버로부터 제 2 전구체를 퍼징하는 단계를 포함한다. 다르게는, 예시적인 ALD 시퀀스들은, 산화제에의 노출로 시작되고, 다음으로 퍼지되고, 그 다음에 제 2 전구체에 노출되고, 그 다음에 퍼지될 수도 있다. 도 1에 예시된 시스템에서, 퍼지 가스는 혼합기 (112) 에서 소스 (110) 로부터 퍼지 가스와 같은 캐리어 가스와 혼합될 수도 있고, 전구체 및 캐리어의 혼합은 플레넘 (114) 을 사용하여 반응 챔버 (144) 로 도입될 수 있다. 전구체 및 퍼지 가스의 흐름의 방향은 일반적으로 도 1에서 화살표로 나타내어진다.
이 기법을 사용하여 형성된 여러 막들은, (예를 들면, 소스 (104 또는 106) 로부터) 전구체를 흡착 또는 흡수할 수도 있고 이는 그 후에 막이 다른 전구체에 노출될 때 아웃가스될 수도 있다. 예를 들면, 란타늄 산화물, 마그네슘 산화물, 바륨 산화물 및 스트론튬 산화물 등의 막은 흡습성일 수도 있다. 이 경우에, 물이 산화제로서 사용되는 경우, 물은 성막된 막에 의해 흡수될 수도 있고 퍼지 사이클 동안 충분히 퍼징되지 않을 수도 있다. 따라서, 물은 기판을 다른 전구체에 노출시키는 단계 동안 아웃가스될 수도 있다. 이 바람직하지 않은 전구체의 아웃가싱이, 막이 또 다른 전구체에 노출될 때 일어나는 경우에, 높은 입자 카운트 및 기판 상에 성막된 막의 감소된 균일성이 발생될 수도 있다.
도 2는, 물질의 아웃가싱을 감소시키는 방법 (200) 을 예시한다. 방법 (200) 은, 반응 챔버를 갖는 기상 반응기를 제공하는 단계 (단계 202), 하나 이상의 가스들의 아웃가싱을 완화시키기 위하여 반응 챔버의 표면 상에 배리어 층을 형성하는 단계 (단계 204), 반응 챔버 내의 기판의 표면 상에 재료를 성막하는 단계 (단계 206), 및 반응 챔버로부터 기판을 제거하는 단계 (단계 208) 를 포함한다. 이들 실시형태들의 예시적인 양태들에 따르면, 그 방법은, 상대적으로 낮은 입자 카운트들, 예를 들면, 300mm 기판 상의 32nm 보다 더 큰 크기를 갖는 10개 미만의 입자들을 갖는 막을 제조한다. 추가적으로 또는 대안적으로, 그 방법은, 1 퍼센트 1 시그마 (one percent one sigma) 미만의 불균일성 값을 갖는 막들을 제조한다.
단계 202 는, 시스템 (100) 의 반응기 (102) 등의 기상 반응기를 제공하는 단계를 포함한다. 위에 언급된 바처럼, 반응기는 수평 흐름 반응기 등의 ALD 반응기를 포함할 수도 있다. 반응기는, 약 0.01 Torr 내지 약 100 Torr 또는 약 1 Torr 내지 약 5 Torr의 압력에서 그리고 약 100℃ 내지 약 600℃ 또는 약 200℃ 내지 약 350℃ 의 온도에서 동작될 수도 있다.
반응 챔버의 내부 표면 상에 성막된 재료에 의해 흡수되거나 또는 그 재료 상에 흡착될 수도 있는 제 1 전구체 또는 제 2 전구체 등의 물질의 원하지 않는 아웃가싱을 완화시키기 위하여, 배리어 층이, 단계 204 동안 반응기 내의 습 표면들 또는 그의 일부 상에 성막된다. 여기에 사용된 바처럼, 반응기의 습 표면들은, 소스 (104 및 106) 로부터 전구체들 등의 성막 가스들에 노출된 반응기 내의 표면들을 지칭한다. 예시적인 배리어 층들은, 전이 금속 산화물, 질화물, 산질화물, 및 탄화물, 그리고 실리콘 산화물 및 알루미늄 산화물을 포함한다. 구체적인 예로써, 배리어 층은 TiO2, TiN, TiON, TiC, Ta2O5, HlO2, SiO2, 및 Al2O3 중 하나 이상으로부터 선택된 재료를 포함한다. 이들 실시형태들의 예시적인 양태들에 따르면, 배리어 층을 형성하기 위하여 종 (예를 들면, 산화제) 과 (예를 들면, 소스 (108) 로부터) 전구체를 반응시킴으로써 배리어 층이 형성된다.
단계 204 동안 성막된 배리어 층의 두께는, 예를 들어, 기판의 표면 상에 성막된 재료, 단계 204 동안 성막된 재료의 두께, 단계 206 동안 프로세싱된 기판들의 수 등에 따라 달라질 수도 있다. 예로써, 배리어 층의 두께는 하나의 단층 (monolayer) 보다 더 크거나, 2개 단층보다 더 크거나, 또는 약 하나의 단층과 약 50 Å 사이, 약 5 Å 내지 약 20 Å, 또는 약 10 Å 내지 약 20 Å 일 수도 있다.
단계 206 동안, 재료는 기판 (142) 과 같은 기판의 표면 상에 성막된다. 기판의 표면은, 성막을 위해 노출되는 평면형 및/또는 비평면형 표면들을 포함하는 임의의 적합한 토포그래피 (topography) 를 가질 수도 있고, 기판은 반도체 및/또는 포토닉 디바이스를 형성하는데 사용되는 재료와 같은 다양한 재료들의 층들을 포함할 수도 있다. 예를 들어, 표면은, 반도체 또는 포토닉 디바이스 워크피스 또는 웨이퍼의 (토폴로지를 포함하는) 상단 표면 또는 그의 일부를 포함할 수도 있다. 단계 206 은 적합하게는 ALD 프로세스를 사용하여 재료를 성막하는 단계를 포함할 수도 있다. 이 경우에, 단계 206 는, 반응 챔버에 (예를 들면, 소스 (104) 로부터) 제 1 전구체를 제공하는 하위 단계로서, 그 제 1 전구체는 제 1 표면 종을 형성하기 위하여 기판의 표면과 반응하는, 그러한 제 1 전구체를 제공하는 하위 단계, (예를 들면, 소스 (110) 로부터 퍼지 가스를 사용하여) 반응 챔버로부터 제 1 전구체를 퍼징하는 하위 단계, 제 2 표면 종을 형성하기 위하여 제 1 표면 종과 반응하도록 반응 챔버에 (예를 들면, 소스 (106) 으로부터) 제 2 전구체를 제공하는 하위 단계, 및 반응 챔버로부터 제 2 전구체를 퍼징하는 하위 단계를 포함할 수도 있다. 이들 단계들은, 원하는 또는 미리결정된 양의 재료가 기판의 표면 상에 형성될 때까지 원하는 횟수 만큼 반복될 수도 있다.
단계 208에서, 기판은 반응 챔버로부터 제거된다. 예로써, 단계 204 동안 기판 지지체 상에 지지된 기판은, 지지체를 언로드 위치로 이동시킨 다음에 기판을 반응기로부터 제거함으로써 반응기 (102) 의 반응 챔버 (144) 로부터 제거될 수 있다. 단계 208 로의 진행하는 프로세스 (200) 로서 예시되었지만, 재료가 다수의 기판들 상에, 동시적으로 또는 순차적으로 단계 206 동안에 성막될 수도 있고 단계 208 동안에 반응기로부터 제거될 수도 있다. 단계 204 내지 단계 208 은 원하는 횟수만큼 반복될 수도 있다.
이제 도 3을 참조하면, 본 개시의 추가적인 실시형태들에 따른 시스템 (300) 이 예시되어 있다. 시스템 (300) 이 반응기 (102) 의 반응 챔버 (144) 에 스캐빈징 전구체를 제공하기 위한 스캐빈징 전구체 소스 (302) 를 포함하는 것을 제외하고는, 시스템 (300) 은 시스템 (100) 과 유사하다.
본 개시의 예시적인 실시형태들의 사용에 적합한 예시적인 스캐빈징 전구체들은, 금속 할라이드, 이를테면 금속 염화물, 및 유기금속 화합물을 포함한다. 구체적인 예로써, 스캐빈징 전구체 소스 (302) 는 하프늄 염화물 또는 실리콘 염화물을 포함한다.
본 개시의 다양한 실시형태들에 따른 예시적인 시스템들은, 시스템의 튜닝을 가능하게 하기 위하여 하나 이상의 도우즈 프론트 모니터링 디바이스들을 포함한다. 도 4는, 기판 (142) 의 상류 (또는 기판 (142) 이 상주하는 위치) 에 위치된 제 1 도우즈 프론트 모니터링 디바이스 (402) 및 제 2 도우즈 프론트 모니터링 디바이스 (404) 를 포함하는, 챔버 (144) 와 같은 반응 챔버의 내부의 일부 (400) 를 예시한다. 예시적인 도우즈 프론트 모니터링 디바이스들은 수정결정 미소저울을 포함한다.
도우즈 프론트 모니터링 디바이스들은, 반응기 (102) 의 하부 (304) 상에 그리고 반응 챔버 (144) 내부에 장착될 수도 있다. 도우즈 프론트 모니터링 디바이스들은, 기판의 상류에 있는 반응 챔버의 습 표면들이 스캐빈징 전구체에 노출될 수 있고, 스캐빈징 전구체의 전부 또는 거의 전부가 기판 (142) 에 도달하기 전에 반응 챔버 표면 상의 종으로 소비되도록 (그 종과 반응하도록) 프로세스 조건들을 튜닝하는데 사용될 수도 있다. 예를 들어, 시스템은, 스캐빈징 전구체의 스토크스 프론트 (Stokes front) 가 기판 (142) 의 상류에서 (예를 들어, 근처에서) 제로에 실질적으로 속하도록 튜닝될 수도 있다. 이것은, 스캐빈징 전구체에 반응 챔버를 노출시키기 전에 기판을 제거하기 보다는, 성막 프로세스 동안 스캐빈징 전구체가 사용될 수 있게 한다.
도 5는, 도우즈 프론트 모니터들이 더 이격되어 위치된 부분 (400) 의 다른 예를 예시한다. 예시된 경우에서, 모니터 (404) 는 기판 (142) 의 하류 (downstream) 에 위치된다. 이 경우에, 추가 및/또는 더 복잡한 계산들이, 스캐빈징 전구체의 전부 또는 거의 전부가 기판 (142) 에 도달하기 전에 소비되도록, 반응기를 튜닝할 필요가 있을 수도 있다.
도 6은 본 개시의 추가 예시적 실시형태들에 따른 반응 챔버 내의 물질의 아웃가싱을 감소시키는 방법 (600) 을 예시한다. 방법 (600) 은, 반응 챔버를 갖는 기상 반응기를 제공하는 단계 (단계 602), 반응 챔버 내의 기판 또는 표면 상에 재료를 성막하는 단계 (단계 604), 및 반응 챔버의 표면 상의 재료와 반응하도록 반응 챔버에 스캐빈징 전구체를 제공하는 단계 (단계 606) 를 포함한다.
기상 반응기를 제공하는 단계 (단계 602) 는, 여기에 개시된 반응기들과 같은 임의의 적합한 반응기를 제공하는 단계를 포함할 수도 있다. 다양한 예들에 따르면, 단계 602 는 ALD 반응기를 제공하는 단계를 포함한다.
단계 604 동안, 재료는, 예를 들어, ALD 프로세스를 사용하여 성막될 수도 있다. 이 경우에, 단계 604 는, 제 1 표면 종을 형성하기 위하여 기판의 표면과 반응하도록 반응 챔버에 제 1 전구체를 제공하는 단계, 반응 챔버로부터 제 1 전구체를 퍼징하는 단계, 제 2 표면 종을 형성하기 위하여 제 1 표면 종과 반응하도록 반응 챔버에 제 2 전구체를 제공하는 단계, 및 반응 챔버로부터 제 2 전구체를 퍼징하는 단계를 포함할 수도 있다.
분리된 단계들 604, 606 로서 예시되었지만, 단계 604 및 606 의 부분들이 오버랩될 수도 있다. 도 7은, 단계들 604 및 606의 예시적인 조합을 포함하는, 프로세스 700 을 예시한다.
예시된 예에서, 프로세스 700 은, 제 1 표면 종을 형성하기 위하여 기판의 표면과 반응하도록 반응 챔버에 제 1 전구체를 제공하는 단계 (단계 702), 예를 들면, 기판의 상류에서 반응 챔버의 표면 상의 재료와 반응하도록 반응 챔버에 스캐빈징 전구체를 제공하는 단계 (단계 704), 반응 챔버로부터 제 1 전구체 및 스캐빈징 전구체를 퍼징하는 단계 (단계 706), 제 2 표면 종을 형성하기 위하여 제 1 표면 종과 반응하도록 반응 챔버에 제 2 전구체를 제공하는 단계 (단계 708), 및 반응 챔버로부터 제 2 전구체를 퍼징하는 단계 (단계 710) 를 포함한다. 단계 704 는 스캐빈징 전구체의 전부 또는 거의 전부가 기판에 도달하기 전에 소비되도록, 스캐빈징 전구체를 제공하는 단계를 포함할 수도 있다. 프로세스 700 은 원하는 두께의 재료가 기판 상에 형성될 때까지 원하는 횟수 만큼 반복될 수도 있다. 그리고, 이 프로세스에 사용된 전구체 및 퍼지 가스들은, 여기에서 언급된 임의의 전구체 및 퍼지 가스들을 포함할 수도 있다.
도 8은, 단계들 604 및 606의 대안의 예시적인 조합을 포함하는, 다른 프로세스 800 을 예시한다. 프로세스 800 가 추가 퍼지 단계 804 를 포함하는 것을 제외하고, 프로세스 800 은 프로세스 700 과 유사하다. 단계 808 가, 이 단계 동안, 단계 706 와 비교하여, 더 적은 전구체 재료가 제거될 수도 있으므로 지속시간이 더 짧을 수도 있거나 및/또는 압력이 더 높을 수도 있는 것을 제외하고, 단계들 802, 806, 808, 810, 및 812 은 프로세스 700 의 단계들 702-710 에 각각 대응할 수도 있다.
본 개시의 예시적인 실시형태들이 여기에 제시되었지만, 본 개시는 그에 한정되지 않는다는 것이 이해되야 한다. 예를 들면, 시스템 및 방법은 다양한 특정 화학물들과 관련하여 설명되지만, 본 개시는 이들 예들에 반드시 한정되는 것은 아니다. 또한, 방법들은 특정 시퀀스로 예시되지만, 여기에서 반대로 나타내지 않는 한, 그 방법은 단계들의 그러한 시퀀스에 한정되지 않는다. 여기에 제시된 시스템 및 방법의 다양한 변경, 변형, 및 향상들이 본 개시의 사상 및 범위를 이탈함이 없이 이루어질 수도 있다.
본 개시의 요지는 다양한 프로세스들, 시스템들 및 구성들의 모든 신규하고 비자명한 조합들 및 하위 조합, 그리고 여기에 개시된 다른 특징들, 기능들, 행위들 및/또는 특성들, 그리고 그의 임의의 그리고 모든 균등물들을 포함한다.
Claims (20)
- 물질의 아웃가싱 (outgassing) 을 감소시키는 방법으로서,
반응 챔버를 갖는 기상 반응기를 제공하는 단계;
하나 이상의 가스들의 아웃가싱을 완화시키기 위하여 상기 반응 챔버의 표면 상에 배리어 층을 형성하는 단계;
상기 반응 챔버 내의 기판의 표면 상에 재료를 성막하는 단계; 및
상기 반응 챔버로부터 상기 기판을 제거하는 단계를 포함하는, 물질의 아웃가싱을 감소시키는 방법. - 제 1 항에 있어서,
상기 기상 반응기를 제공하는 단계는 원자층 증착 반응기를 제공하는 단계를 포함하는, 물질의 아웃가싱을 감소시키는 방법. - 제 1 항에 있어서,
상기 성막하는 단계는
상기 반응 챔버에 제 1 전구체를 제공하는 단계로서, 상기 제 1 전구체는 제 1 표면 종을 형성하기 위하여 상기 기판의 표면과 반응하는, 상기 제 1 전구체를 제공하는 단계;
상기 반응 챔버로부터 상기 제 1 전구체를 퍼징하는 단계;
제 2 표면 종을 형성하기 위하여 상기 제 1 표면 종과 반응하도록 상기 반응 챔버에 제 2 전구체를 제공하는 단계; 및
상기 반응 챔버로부터 상기 제 2 전구체를 퍼징하는 단계를 포함하는, 물질의 아웃가싱을 감소시키는 방법. - 제 1 항 내지 제 3 항 중 어느 한 항에 있어서,
상기 배리어 층을 형성하는 단계는, 전이 금속 산화물 층, 전이 금속 질화물 층, 전이 금속 산질화물 층, 및 전이 금속 탄화물 층 중 하나 이상으로부터 선택된 층을 형성하는 단계를 포함하는, 물질의 아웃가싱을 감소시키는 방법. - 제 1 항 내지 제 3 항 중 어느 한 항에 있어서,
상기 배리어 층을 형성하는 단계는 TiO2, Ta2O5, HfO2, SiO2, Al2O3, TiN, TiON, 및 TiC 중 하나 이상을 포함하는 층을 형성하는 단계를 포함하는, 물질의 아웃가싱을 감소시키는 방법. - 제 1 항 내지 제 3 항 중 어느 한 항에 있어서,
상기 배리어 층을 형성하는 단계는, Al2O3 를 포함하는 층을 형성하는 단계를 포함하는, 물질의 아웃가싱을 감소시키는 방법. - 제 1 항 내지 제 3 항 중 어느 한 항에 있어서,
상기 배리어 층을 형성하는 단계는, 상기 반응 챔버의 표면 상에 약 하나의 단층과 약 50 Å 사이의 배리어 재료를 성막하는 단계를 포함하는, 물질의 아웃가싱을 감소시키는 방법. - 반응 챔버 내에서 물질의 아웃가싱 (outgassing) 을 감소시키는 방법으로서,
반응 챔버를 갖는 기상 반응기를 제공하는 단계;
상기 반응 챔버 내의 기판의 표면 상에 재료를 성막하는 단계; 및
상기 반응 챔버의 표면 상에 상기 재료와 반응하도록 상기 반응 챔버에 스캐빈징 전구체를 제공하는 단계를 포함하는, 물질의 아웃가싱을 감소시키는 방법. - 제 8 항에 있어서,
상기 스캐빈징 전구체는 금속 할라이드 및 유기금속 화합물로 이루어지는 군으로부터 선택되는, 물질의 아웃가싱을 감소시키는 방법. - 제 8 항에 있어서,
상기 스캐빈징 전구체는 HfCl4 및 SiCl4, 그리고 TMA로 이루어지는 군으로부터 선택되는, 물질의 아웃가싱을 감소시키는 방법. - 제 1 항 내지 제 10 항 중 어느 한 항에 있어서,
상기 기판의 표면 상에 재료를 성막하는 단계는
제 1 표면 종을 형성하기 위하여 상기 기판의 표면과 반응하도록 상기 반응 챔버에 제 1 전구체를 제공하는 단계;
상기 반응 챔버로부터 상기 제 1 전구체를 퍼징하는 단계;
제 2 표면 종을 형성하기 위하여 상기 제 1 표면 종과 반응하도록 상기 반응 챔버에 제 2 전구체를 제공하는 단계; 및
상기 반응 챔버로부터 상기 제 2 전구체를 퍼징하는 단계를 포함하는, 물질의 아웃가싱을 감소시키는 방법. - 제 11 항에 있어서,
상기 스캐빈징 전구체를 제공하는 단계는, 상기 제 1 전구체를 제공하는 단계 후에 일어나는, 물질의 아웃가싱을 감소시키는 방법. - 제 12 항에 있어서,
상기 스캐빈징 전구체를 제공하는 단계는, 상기 제 1 전구체를 퍼징하는 단계 전에 일어나는, 물질의 아웃가싱을 감소시키는 방법. - 제 11 항에 있어서,
상기 스캐빈징 전구체를 제공하는 단계는, 상기 제 1 전구체를 퍼징하는 단계 후에 일어나는, 물질의 아웃가싱을 감소시키는 방법. - 제 14 항에 있어서,
상기 스캐빈징 전구체를 퍼징하는 단계를 더 포함하는, 물질의 아웃가싱을 감소시키는 방법. - 제 15 항에 있어서,
상기 스캐빈징 전구체를 퍼징하는 단계는, 상기 제 2 전구체를 제공하는 단계 전에 일어나는, 물질의 아웃가싱을 감소시키는 방법. - 제 1 항 내지 제 10 항 중 어느 한 항에 있어서,
도우즈 프론트 모니터링의 단계를 더 포함하는, 물질의 아웃가싱을 감소시키는 방법. - 제 17 항에 있어서,
상기 도우즈 프론트 모니터링의 단계는, 상기 기판에 상기 스캐빈징 전구체가 도달하기 전에 상기 스캐빈징 전구체를 소비하도록 프로세스 조건들을 튜닝하는데 사용되는, 물질의 아웃가싱을 감소시키는 방법. - 기판 상에 재료를 성막하기 위한 시스템으로서,
반응 챔버를 포함하는 반응기;
상기 반응 챔버에 유체적으로 연결된 제 1 전구체 소스;
상기 반응 챔버에 유체적으로 연결된 제 2 전구체 소스;
상기 반응 챔버에 유체적으로 연결된 퍼지 가스 소스; 및
상기 반응 챔버에 유체적으로 연결된 스캐빈징 전구체 소스를 포함하고,
상기 반응 챔버는 제 1 전구체에 노출되고,
상기 반응 챔버가 상기 제 1 전구체에 노출된 후에, 상기 반응 챔버는 스캐빈징 전구체에 노출되고,
상기 반응 챔버가 상기 스캐빈징 전구체에 노출된 후에, 상기 반응 챔버는 제 2 전구체에 노출되는, 기판 상에 재료를 성막하기 위한 시스템. - 제 19 항에 있어서,
하나 이상의 도우즈 프론트 모니터링 디바이스들을 더 포함하는, 기판 상에 재료를 성막하기 위한 시스템.
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US20150017319A1 (en) | 2015-01-15 |
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US20150140210A1 (en) | 2015-05-21 |
US9790595B2 (en) | 2017-10-17 |
US8993054B2 (en) | 2015-03-31 |
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