TW201631694A - 用於電漿處理系統的低溫夾具 - Google Patents
用於電漿處理系統的低溫夾具 Download PDFInfo
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- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
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Abstract
一晶圓夾具總成包括一圓盤、一桿、及一基座。該圓盤包括一電氣絕緣材料,該電氣絕緣材料界定該圓盤之一頂表面,複數個電極係嵌入在該電氣絕緣材料內。該圓盤亦包括一內圓盤零件,該內圓盤零件形成一熱交換流體的一或更多個通道,且與該電氣絕緣材料熱連通,且一導電板材經設置與該內圓盤零件鄰近。該桿包括一與該板材及複數個連接器電性耦接的導電桿殼體,且包括複數個連接器,該複數個連接器包括該等電極之電氣連接器。該基座包括一與該桿殼體電性耦接的導電基座殼體、一經設置在該基座殼體內的電氣絕緣終端塊,該複數個連接器穿行通過該終端塊。
Description
本揭露廣泛地應用至電漿處理設備的領域。具體而言,揭露用於在一工件上提供空間上均勻的電漿處理之系統及方法。
積體電路及其他半導體產品經常製造在稱為「晶圓(wafer)」的基板之表面上。有時處理是對執行固持在一載體(carrier)的晶圓群組執行,而其他時候處理及測試一次對一個晶圓執行。當執行單片式(single wafer)處理或測試時,晶圓可經定位在一晶圓夾具上。其他工件亦可在類似的夾具上處理。
在一實施例中,一晶圓夾具總成包括一圓盤、一桿、及一基座。該圓盤包括一電氣絕緣材料,該電氣絕緣材料界定該圓盤之一頂表面,複數個電極係嵌入在該電氣絕緣材料內。該圓盤亦包括一內圓盤零件,該內圓盤零件形成一熱交換流體的一或更多個通道,且與該電氣絕緣材料熱連通,且一導電板材經設置與該內圓盤零件鄰近。該桿包括一與該板材及複數個連接器電性耦接的導電桿殼體,且包括複數個連接器,該複數個
連接器包括該等電極之電氣連接器。該基座包括一與該桿殼體電性耦接的導電基座殼體、一經設置在該基座殼體內的電氣絕緣終端塊,該複數個連接器穿行通過該終端塊。
在一實施例中,一電漿處理之方法包括:藉由一通過一夾具之一內圓盤零件的熱交換流體,穩定該夾具之溫度,該夾具具有一與該內圓盤零件熱連通之電氣絕緣頂表面;裝載一工件至該夾具上;及跨在該電氣絕緣頂表面內的兩個空間上分離的電極提供一DC電壓差動,用以箝制該工件至該夾具。該方法更包括:在一環繞該夾具之腔室中提供製程氣體;以及在該夾具下方的一導電板材與該腔室之一或更多個壁之間提供一RF電壓,用以對一來自該等製程氣體之電漿引火(ignite)。
10‧‧‧製程流體
10(1)‧‧‧第一輸入氣體流;氣體流
10(2)‧‧‧第二輸入氣體流;氣體流
10(3)‧‧‧輸入氣體流;氣體流
20‧‧‧外部電力
30‧‧‧真空
35‧‧‧熱交換流體
40‧‧‧資料連線
50‧‧‧晶圓
100‧‧‧晶圓處理系統;系統
110‧‧‧殼體
115‧‧‧晶圓介面
135‧‧‧控制器
145‧‧‧使用者介面
150‧‧‧內部電源
150(1)‧‧‧第一電源
150(2)‧‧‧第二電源;電源
151‧‧‧連接
160‧‧‧處理部位
170‧‧‧晶圓夾具;夾具
175‧‧‧圓盤
180‧‧‧桿
185‧‧‧基座
205‧‧‧絕緣頂部;頂部
207‧‧‧通道
208‧‧‧通道
210‧‧‧電極
210(1)‧‧‧電極
210(2)‧‧‧電極
211‧‧‧環
212‧‧‧內圓盤零件
214‧‧‧連接零件
215‧‧‧熱交換通道
218‧‧‧內部鰭部
219‧‧‧螺栓
220‧‧‧導電板材;板材
222‧‧‧導電桿殼體;桿殼體
225‧‧‧絕緣襯墊
230‧‧‧連接器
230(1),230(2)‧‧‧射頻/直流(RF/DC)連接器;連接器
230(3),230(4)‧‧‧熱交換流體入口及出口
230(5)‧‧‧探針中心分接頭終端
230(6)‧‧‧接線
265‧‧‧連接器
270‧‧‧導電基座殼體;基座殼體
275‧‧‧電氣絕緣終端塊;終端塊
280‧‧‧通道
285‧‧‧背側氣源
300‧‧‧電漿晶圓處理系統;處理系統
305‧‧‧製程腔室
310‧‧‧遠端電漿源
320‧‧‧擴散器
325‧‧‧擴散器
330‧‧‧空間
335‧‧‧第二電漿
340‧‧‧擴散器
350‧‧‧擴散器
355‧‧‧電漿
360‧‧‧氣體通路
370‧‧‧DC偏壓
380‧‧‧DC偏壓
390‧‧‧RF來源
395‧‧‧中心分接頭DC探針;DC探針
398‧‧‧高阻抗電路
400(1)‧‧‧膜
400(3)‧‧‧殘餘材料
400(4)‧‧‧膜
410‧‧‧溝
420‧‧‧光阻劑
50(1)‧‧‧晶圓
50(2)‧‧‧所得晶圓
50(3)‧‧‧所得晶圓
圖1示意性地繪示根據一實施例之一晶圓處理系統之主要零件。
圖2係根據一實施例之顯示於圖1中的一晶圓夾具之示意性繪圖,顯示其例示性元件部件。
圖3係根據一實施例之包括一晶圓夾具的電漿晶圓處理系統之示意性繪圖,顯示其例示性元件部件。
圖4係圖3之電漿晶圓處理系統之一部分的示意性繪圖,其中包括一晶圓夾具及一擴散器的數個部分,且繪示與其的例示性電源連接。
圖5繪示根據一實施例的製程中的一晶圓之一部分。
圖6繪示當圖5之晶圓部分被曝露至一不將離子導向之電漿的假設性結果。
圖7繪示根據一實施例的當圖5之晶圓被曝露至一將離子導向之電漿的結果。
本揭露可藉由對下列實施方式之參照結合以下所描述的圖式而理解,其中相似的標號係在各圖式中使用來指稱類似的元件。應注意到,為了清楚說明的目的,圖式中的某些零件可能未依比例繪製。一物件的特定實體可藉由在括弧中的標號(例如,連接件230(1)、230(2)等)之使用來指稱,而無括弧的標號指稱任何此物件(例如,連接件230)。在一個物件的多個實體經顯示的情況中,為了清楚說明,可能僅有該等實體的一些被標示。
本文中的實施例提供用於晶圓處理系統的新穎且有用的功能。半導體晶圓尺寸在過去數年來已顯著降低,因此每片所處理晶圓能夠獲得更多個具有更強功能的積體電路。典型的晶圓直徑從1970年代的約2或3吋增加到2010年代的12吋或更大。在相同的時期中,商品化積體電路之典型最小特徵尺寸從約5微米減少到約0.015微米。在晶圓尺寸成長為較大的同時處理更小的特徵需要在處理均勻(processing uniformity)方
面的顯著改良。因為化學反應速率經常係溫度敏感的,處理期間跨晶圓的點對點溫度控制(point to point temperature control)變得更加重要。舉例而言,在某些類型的處理中,在一晶圓內的幾個攝氏溫度之點對點溫度差異在過去可能是可接受的,但現在此類差異可能需要被維持在約一度或更少。在積體電路及其他裝置(device)的製造中所使用的某些材料亦可能需要在非常具腐蝕性的電漿環境中的處理。除了晶圓以外的工件之電漿處理亦可受益於改良的處理均勻,且視為在本揭露之範疇內。因此,本文中的夾具如用於固持「晶圓(wafer)」的「晶圓夾具(wafer chuck)」之表徵(characterization)應被理解為與用於固持任何種類的「工件(workpiece)」的「夾具」之均等物,且「晶圓處理系統」類似地為「處理系統」之均等物。
圖1示意性地繪示一晶圓處理系統100之主要零件。系統100係描繪唯一單片(single wafer)、半導體晶圓處理系統,但對本領域具通常知識者而言,本文中之技術及原理可應用至任何類型的電漿處理系統(例如,處理其他類型的工件而不一定是半導體或晶圓的系統)。應理解到,圖1係僅示意性繪示系統100之所選取主要的零件之圖表,一實際的處理系統據此在與系統100相比時將看起來不同,且可能含有額外的零件。
對晶圓處理系統100提供有一或更多資源(utility),諸如(多種)製程流體10、外部電力20、
真空30、(多種)熱交換流體35。晶圓處理系統100包括一殼體及一晶圓介面115,晶圓介面115從外部來源接收晶圓50且將晶圓50定位在一處理部位(processing location)160內。晶圓處理系統100亦可包括一使用者介面145及一控制器135,控制器135典型地包括一微處理器、記憶體、及類似物,可自使用者介面145及/或其他來源取得輸入,且對晶圓處理系統100之硬體零件提供基於計算機的控制。控制器135可通過一或更多個資料連線(data link)40與外部網路及/或計算機介面,資料連線40可係實體(接線(wire)或光學連接器)或無線連接。晶圓處理系統100亦可包括一或更多個內部電源150,內部電源150轉換或調節由外部電力20所供應的電力用於供系統之硬體零件使用。
處理部位160接收各晶圓50至一晶圓夾具170上,晶圓夾具170在實施例中包括三個部分:一圓盤175、支撐圓盤175的一桿180、及支撐桿180之一基座185。晶圓50實體上經定位於圓盤175上,且於實施例中,圓盤175加熱、冷卻及/或以機械方式固持晶圓50。晶圓夾具170亦經組態以耦接射頻(RF)及/或直流(DC)電壓至晶圓50,此用於晶圓50到圓盤175的靜電箝制(electrostatic clamping)、用於在處理部位160內產生一電漿、及/或用於將活性離子從電漿引導至晶圓50。處理部位160因此將晶圓50曝露於「電漿產
物(plasma product)」下,電漿產物於本文中定義為是一電漿之一部分(或在一時間曾為)電漿之一部分的任何材料。電漿產物可包括離子、自由基、來源氣體的分子碎片(molecular fragment)、其他活化物種,及/或電漿之部分但未轉換成離子、自由基等等的來源氣體原子或分子的任一者或全部。任何時間均未形成一電漿之一部分的氣體在本文中係定義為「未活化氣體(unactivated gas)」。
在實施例中,圓盤175及/或桿180亦經組態以操縱晶圓50用於存取晶圓傳送系統工具。舉例而言,在實施例中,桿180可為了將被接收於圓盤175上的一晶圓50而將圓盤175升高,且隨後降低圓盤175至另一高度用於處理,或與前述相反。在此等或其他實施例中,圓盤175及/或桿180可包括將晶圓50相對於圓盤175之一頂表面升高或降低的致動器,諸如可從圓盤175延伸或收回至圓盤175內的升舉銷,使得一晶圓工具可被插入至晶圓50與該頂表面之間。桿180亦可促進與圓盤175之電性及/或流體連接。基座185以機械方式錨定桿180在殼體110內,且在實施例中,提供介面給到桿180之電氣資源及/或流體。基座185、桿180、及圓盤175之數個部分或其任何組合可與彼此以一體成型的方式(monolithically)形成,或可從元件部件來部分地或完全地組裝,如以下所進一步描述。
圖2係晶圓夾具170之示意性繪圖,顯示其例示性元件部件。圖2未依比例繪製,為了清楚說明,晶圓夾具170之某些元件在尺寸方面經放大或縮小,並非各元件之每一個實體均經標示,且元件之間的內部連接未全部顯示。晶圓夾具170之區域如圖1而經識別為圓盤175、桿180、及基座185,雖然晶圓夾具170之某些元件可能與此等區域之兩者或更多者重疊。圓盤175包括一絕緣頂部205,電極210經嵌入於絕緣頂部205中。頂部205可由陶瓷或其他絕緣材料形成,舉例而言,在實施例中,頂部205由氮化鋁或氧化鋁形成。電極210可由能夠承受中至高溫的傳導性及/或阻性(resistive)材料形成,諸如舉例而言為氧化鎢。
在頂部205內的一可選的通道207將一熱轉移氣體(諸如氦氣)與晶圓50之一背側接觸,用以改良頂部205與晶圓50之間的熱轉移。經改良的熱轉移能夠在晶圓非完美平坦且因此與頂部205之頂表面非均勻接觸的情況中帶來幫助,及/或用以將一晶圓上的熱均勻從點對點為數度(a few degree)的範圍改良到範圍為一度或更小。可選的通道208與通道207及在頂部205之一頂表面內之另一者交互連接,使得熱轉移氣體可在晶圓50之底表面與頂部205之間散布直到該氣體超過一晶圓50之一外邊緣。
可能由金屬(舉例而言,鋁或其合金)形成的一導電板材220係設置於頂部205下方。板材220支
撐一內圓盤零件212,在內圓盤零件212中定義了一或更多個熱交換通道215。舉例而言,熱交換通道215可經定義為在內圓盤零件212內的一螺旋組態。熱交換通道215可定義內部鰭部218(如所顯示),以改良在通道215內流動的熱交換流體35(見圖1)與內圓盤零件212之間的熱耦合(thermal coupling)。
設置在內圓盤零件212及板材220上方的是一連接零件214。連接零件214係有利地由一具有高熱傳導性及合理地高的延展性(ductibility)之材料所形成,以適應溫度改變期間與相鄰元件的機械應力及/或熱膨脹失配。在實施例中,連接零件214之製造係有利地由鋁矽碳化物(AlSiC)製造,鋁矽碳化物以高熱傳導性及至少高於圓盤內零件212及頂部205之延展性為特徵。由於AlSiC的花費,使用AlSiC可被視為不平常的,然而已發現使用AlSiC與使用更為習之的材料相比產生非預期的良好結果。連接零件214可使用螺拴219固定至板材220(如所顯示)。
在實施例中,頂部205以環211固持定位於連接零件214上方,環211舉例而言以陶瓷製成。環211可在頂部205上方且繞連接零件214經壓蓋套接(如所示),以提供機械穩定性及良好的熱耦合,然而並不剛性地固定環211及/或頂部205與連接零件214或板材220。以此方式附接頂部205有利地適應加熱或冷卻期間在頂部205、環211、及連接零件214之間的輕微熱
膨脹失配。環211亦保護螺拴219免於曝露於夾具170外側的電漿及/或電漿產物下。
在桿180中,導電桿殼體222係在頂部205以下,且形成桿180之一殼體。桿殼體222亦可舉例而言由鋁製成,板材220及桿殼體222係電性耦接且可整合地形成,如圖2中所顯示,或以固定或接合元件部件來組裝。桿殼體222容納一可選的絕緣襯墊225,舉例而言,絕緣襯墊225由陶瓷材料諸如AlN或Al2O3製成,該陶瓷材料幫助保持內部元件免於與桿殼體222短路或起弧(arcing)。絕緣襯墊225可與內圓盤零件212整合地形成,如圖2中所顯示,或者可與其分別形成。可選地,絕緣襯墊225之內部體積表面可以惰性氣體(諸如氦氣或氮氣)沖洗,以移除熱、或稀釋且移除在晶圓被轉移至或轉移出夾具170的時候可能進入夾具表面的製程氣體。
桿180亦在電源與設備的其他設施之間容納多種連接器230,夾具170及圓盤175之特徵位於該設備中。圖2中所顯示的例示性連接器230包括:射頻/直流(RF/DC)連接器230(1)、230(2);一熱交換流體入口及出口230(3)、230(4);一探針中心分接頭終端230(5);及一熱電偶(thermocouple,TC)或電阻溫度偵測器(RTD)接線230(6)(例如,一二零件接線,於圖2中示意性地顯示為一單一連接器)。在實施例中,其他連接器230係可行的。連接器230可為單或雙絞線
接線、棒、共軸或其他連接器、絕緣或非絕緣接線、或流體管道。在實施例中,射頻/直流(RF/DC)連接器230(1)、230(2)包括一內導體、一繞該內導體的絕緣層、一繞該絕緣層的接地管、及一繞該接地管的陶瓷管。係流體管道的連接器230可與圓盤及/或基座零件整合地形成,諸如於圖2中所顯示,熱交換流體入口及出口230(3)、230(4)與內圓盤零件212係整合地形成。
TC或RTD可以任何數目實施,且可選地,TC或RTD可針對溫度變化之敏感度組織,該等溫度變化之成因係熱交換流體35之溫度及流動速率、電漿或電漿產物之加熱、與流動氣體或電漿產物之交互作用所引起的加熱或冷卻、或其他原因。在實施例中,夾具170之表徵可造成對溫度跨一給定的夾具170之組態為均勻的判定,使得一單一TC或RTD精準地代表夾具170之溫度。在其他實施例中,多個TC或RTD可用以監控夾具170之溫度均勻,提供能夠用以自動及/或手動地調整熱交換流體35或電漿處理系統(夾具170位於其中)之其他方面的操作的資訊,而促進溫度均勻。
連接器230亦可為流體管道。此外(或不將連接器230組態為流體管道),桿殼體222、絕緣襯墊225及/或其等之間的空間可用流體通路(fluid passage)來組態。舉例而言,一背側氣源285供應He或其他惰性氣體至通道207,用於改良的跨晶圓50之熱控制。
使用(多種)熱交換流體35以加熱及/或冷卻圓盤175在一相對低的溫度區間(諸如約20C至150C之範圍)中簡化了夾具170及在夾具170上處理之一晶圓50之熱管理。舉例而言,一外部熱交換器可經設定以在所欲的夾具溫度下提供一加熱/冷卻流體(諸如一50%水及50%乙二醇或丙二醇的混和物)。圓盤175具備有一高熱質量,裝載至圓盤175上的晶圓50快速地與圓盤175在所欲的溫度下達成熱平衡,包括一由AlSiC形成的連接零件214幫助提供該高熱質量。圓盤175之熱傳導性及熱交換流體的流動速率在即使有電漿產生的加熱及/或冷卻效應、處理部位160內的氣體流動、及類似者之下,仍大到足以使圓盤175及晶圓50維持在所欲的溫度。
在圖2中的連接器230之數目和配置僅係示意性,連接器230可(且通常)因為諸如最小化桿180之尺寸、最大化相鄰連接器230之間的空間、改良溫度均勻、及/或散熱、以及其他理由的目的而以不同方式配置。
夾具170之基座185包括一導電基座殼體270,導電基座殼體270可由金屬(舉例而言,由鋁)製成,且可與桿殼體222整合地形成,或藉由固定件、焊接或類似者組裝至桿殼體222。在實施例中,基座殼體270包括一電氣絕緣終端塊275,連接器230穿過電氣絕緣終端塊275。電氣絕緣終端塊275係用以達到對
準連接器230至265之目的,使得該等連接器分別的遠側端經配置以與在圓盤175內的相對應承座(socket)囓合(mate)。終端塊275可由絕緣體形成,該絕緣體係諸如聚醚醚酮(PEEK)或陶瓷,兩者均提供良好的電阻及在高溫下之穩定性。
基座殼體270可在其中包括用於熱交換流體35的諸如通道280的通道(圖1),如所顯示。穿行通過通道280的熱交換流體35可為氣體或液體。在實施例中,通過通道280的熱交換流體35係水與乙二醇或丙二醇之一混合物,該混合物具有約50%水、50%二醇的混合比率。在實施例中,透過通道280所提供之冷卻不僅冷卻基座殼體270,亦冷卻桿殼體222及以機械方式與之連接的導電板材220。藉由在基座185及內圓盤零件212中均使用熱交換流體35,夾具170能夠提供優異的穩定熱性能。
基座185可固定在晶圓處理設備的一相關聯件內,或可係可活動的安裝,使用滑動件、樞鈕、台或其他裝置來定位圓盤175以傳送或接收一晶圓或其他工件,及/或以如所需要般對準該晶圓或工件。
圖3係一包括晶圓夾具170之電漿晶圓處理系統300之示意性繪圖,顯示其例示性元件部件。圖3未依比例繪製,為了清楚說明,電漿晶圓處理系統300之某些元件在尺寸方面經放大或縮小,並非各元件之每一個實體均經標示,且元件之間的內部連接未全部顯
示。電漿晶圓處理系統300係圖1之晶圓處理系統100之實例。電漿晶圓處理系統300在一製程腔室305內使用電漿產物及/或未活化氣體處理一晶圓50,圖3顯示電漿產物之流動為空心箭頭,且顯示未活動氣體之流動為實線箭頭。一可選的遠端電漿源310從一第一輸入氣體流10(1)產生一第一電漿(未顯示),且可選地混合所得電漿產物與一第二輸入氣體流10(2),將該電漿產物朝向一擴散器320穿行。該電漿產物可進一步穿行通過可選的擴散器320、325、及340,該等擴散器320、325、及340係用以至少達到在電漿產物被引入製程腔室305之前均勻地分配該等電漿產物的目的。在所顯示的組態中,一第一電源150(1)跨擴散器325與擴散器340之間的一空間330提供RF能量,在空間330中形成一第二電漿335。可選地,來自第一及第二電漿的電漿產物可通過又一擴散器350(有時稱為一「噴灑頭(showerhead)」)與又一輸入氣體流10(3)混合。擴散器350以用於傳遞電漿產物通過擴散器350之大埠口及氣體通路360組態,氣體通路360僅通過面向製程腔室305的擴散器350之側輸送輸入氣體流10(3)。應瞭解到遠端電漿源310及擴散器320、325、340、及350之任一者或全部之使用係可選的。
一第二電源150(2)係可控制地經組態以通過連接器230(1)及230(2)提供RF能量及/或DC偏壓至在夾具170內的電極210(1)及210(2)(如所示意性
地顯示),且至處理系統300之其他部件。RF能量及/或DC偏壓之具體連接可變化,如以下所進一步討論。舉例而言,電源150(2)可提供跨電極210(1)及210(2)之DC偏壓,且可在電極210(1)及210(2)與處理系統300之其他部件之間提供RF能量及/或DC偏壓,如藉由電源150(2)與擴散器350之間的連接151所指示。提供RF能量及DC偏壓兩者對於靜電地箝制晶圓50(或任何其他工件)至夾具170、對於在製程腔室305內產生一電漿、以及對於引導電漿之離子至晶圓50上的某些處理部位(processing site)係特別有用的,如以下所進一步討論。與對電漿約100至500W的電力配送相對應,典型的DC鉗位電壓(clamping voltage)係±200V配送至相對電極210(1)及210(2),而典型的RF電壓係±75V跨製程腔室305。處理系統300於圖4中顯示更多細節。
圖4係電漿晶圓處理系統300之一部分的示意性繪圖,電漿晶圓處理系統300包括晶圓夾具170及擴散器350的數個部分,且圖4繪示與擴散器350的例示性電源連接。圖4未依比例繪製,為了清楚說明,電漿晶圓處理系統300之某些元件在尺寸方面經放大或縮小,並非各元件之每一個實體均經標示,且元件之間的內部連接未全部顯示。圖4顯示了由分別的擴散器350與夾具170之部分為界的製程腔室305之一部分、晶圓50、在製程腔室305內的一電漿355、及電源150(2)之例示性
細節。電漿355係從氣體流10(1)、10(2)及/或10(3)以該等氣體流之原始未活化形式所產生,或為在遠端電漿源310中或在空間330(圖3)內所形成的電漿產物。用於形成電漿355的RF能量係由在電源150(2)內的RF來源390所供應。在圖4中所顯示的組態中,電源150(2)亦跨電極210(1)與210(2)提供一DC偏壓370,DC偏壓370用以達成靜電地箝制晶圓50至晶圓夾具170之目的。DC電場於圖4中以虛線箭頭顯示。在圖4中所顯示之實施例包括在電極210與擴散器350之間的一可選的DC偏壓380。DC偏壓380能夠將在電漿355中形成的離子(或存在於來自其他部位的電漿產物中的離子,如以上所討論)導向朝向晶圓50,以影響在晶圓50上的電漿處理之方向性(見圖5)。
圖4亦顯示一中心分接頭DC探針395,中心分接頭DC探針395能夠被監控以測定晶圓50之實際的背側DC電壓。DC探針395上所測量的電壓可被測量且用以控制DC偏壓380,以便控制且最佳化晶圓50上的製程結果。舉例而言,當執行電漿處理時,在電漿產物內的活性物種經常係帶負電荷的離子,該些帶負電荷的離子在反應時能夠轉移負電荷至晶圓50。此造成晶圓50之充電,晶圓50在處理期間所獲得的典型DC電壓可係約-50V。中心分接頭DC探針395允許此電壓被感測,且因此藉由據以調整DC偏壓380來補償此電壓。因此,DC探針395與一測量DC探針395上的電壓之高阻抗電
路398偶接,且提供適當的資訊給電源150(2)以調整DC偏壓380。
所有晶圓夾具170之元件(及與晶圓夾具170整合的元件)係與在約20C至150C的溫度範圍內之操作相容,對比之下,較早的系統可能利用與20C至150C溫度範圍不相容的材料(諸如某些聚合物或塑膠、橡膠、及類似者)。被曝露至電漿的元件亦係能夠在非常嚴峻的電漿環境中存活,諸如H*或F*自由基、及其他者(在分別使用NH3或NF3作為來源氣體時產生)。O2常見地經添加作為一來源氣體(用以供應電子,促進電漿起始),而產生進一步離子物種及自由基。較早的系統經常使用不鏽鋼夾具,但不鏽鋼一般在此類環境中腐蝕而造成顆粒污染物。晶圓夾具170在處理系統300內之配置係獨特的,因為這允許處理發生在一均勻的溫度,且亦提供穩固的靜電箝制給熱轉移,及提供將活性離子物種導向朝向工件的能力,而無腐蝕或熱劣化。舉例而言,本文中的實施例係能夠進行晶圓50上之某些金屬及/或陶瓷材料的電漿蝕刻。
圖5、圖6及圖7繪示以本文中所描述的晶圓夾具及晶圓處理系統可獲得的例示性處理結果。圖5繪示製程中的一晶圓50(1)的一部分。晶圓50(1)已經處理以在其中形成深溝410,且一膜400(1)已被沈積在晶圓50(1)之頂表面上與溝410中。後續處理係意欲用以從晶圓50(1)之某些區域移除膜400(1),但在其他區域上
留下膜400(1),於是光阻劑420在膜400(1)欲保留之區域中被提供。
圖6繪示當晶圓50(1)被曝露至一不將離子導向之電漿的假設性結果,舉例而言,藉由將晶圓50(1)曝露至一在其中活性物種僅由擴散(diffusion)來隨機引導的電漿中。容易被曝露至該活性物種的膜400(1)之表面經蝕刻,然而晶圓50(1)不與活性物種反應。此製程留下具被光阻劑420所保護的膜400(4)之所得晶圓50(2),但亦在溝410內留下殘餘材料400(3)。此現象之發生係因為活性物種行進直到遇到某物,接著在所降落處反應。很少活性物種剛好在很深地穿透入溝410所需的確切方向上行進。使用被隨機引導的活性物種來蝕刻晶圓50(1)夠長的時間以移除殘餘材料400(3)可能可行或不可行,但通常係不切實際的。
圖7繪示當晶圓50(1)被曝露至將離子導向之一電漿時的結果,該導向係藉由提供一將離子引導朝向晶圓50(1)的電場,亦即,如圖3及圖4中所顯示的使用晶圓夾具170。在圖4中所指示的電場將帶負電荷的活性物種引導向下(在圖7之定向中),使得更多活性物種抵達在溝410內的膜400(1)之較低區域。所得晶圓50(3)僅在原始膜400(1)被光阻劑420所保護之部位中保留膜400(4)(如所顯示)。
本文中所描述之在晶圓夾具中所使用的材料之設計及類型,非係通常被考慮用於晶圓夾具者。過去
晶圓夾具經常係簡單的事物(affair),範圍從僅為金屬之板條到提供真空或靜電箝制、可調整晶圓對準/定位、及類似者的稍微複雜之系統。並未知有設計保持所有這些功能,且又在高度腐蝕性電漿環境中以精準的跨晶圓溫度控制來操作而無劣化。
雖已描述數個實施例,本領域具通常知識者應認知到各種修改、替代構造、及均等物可在不偏離本發明之精神下被使用。此外,若干個眾所週知的製程及零件並未描述以避免不必要的模糊本發明。據此,以上實施方式不應被視為限制本發明之範疇。
在提供數值之一範圍處,應理解在比範圍之上限值(upper limit)與下限值之間的以下限值之單位的十分之一的各中介數值(除非前後文清楚地指示非此情況)亦被具體揭露。在任何所陳述的範圍中的任何所陳述的數值或中介數值與任何彼範圍中的任何其他所陳述的數值或中介數值之間的各較小的範圍經涵蓋。此等較小的範圍的上限值及下限值可獨立地被包括或排除於範圍中,且沒有包括上下限值、包括上下限值之一者、或包括上下限值之兩者的較小的範圍亦被涵蓋於本發明內(任何特定在所陳述範圍中排除之限值)。當所陳述範圍包括限值之一者或兩者時,排除彼等經包括的限值之任一者或兩者的範圍亦被包括。
如本文中及所附申請專利範圍中所使用,單數型「一(a,an)」及「該(the)」包括複數個指稱物,
除非前後文明確地指示非此情況。因此,舉例而言,對「一製程(a process)」之指稱包括複數個此類製程,且對「該電極」之指稱包括對一或更多個電極及所屬領域具通常知識者所知的電極均等物等等。同樣地,在此說明書中及以下申請專利範圍中所使用字詞「包含(comprise,comprising)」、「包括(include,including,includes)」係意欲用以指定所陳述特徵、整數、元件、或步驟之存在,但該等字詞不排除一或更多個其他特徵、整數、元件、步驟、動作、或群組之存在或添加。
10‧‧‧製程流體
20‧‧‧外部電力
30‧‧‧真空
35‧‧‧熱交換流體
40‧‧‧資料連線
50‧‧‧晶圓
100‧‧‧晶圓處理系統;系統
110‧‧‧殼體
115‧‧‧晶圓介面
135‧‧‧控制器
145‧‧‧使用者介面
150‧‧‧內部電源
160‧‧‧處理部位
170‧‧‧晶圓夾具;夾具
175‧‧‧圓盤
180‧‧‧桿
185‧‧‧基座
Claims (20)
- 一種晶圓夾具總成,包含:一圓盤,包含:一電氣絕緣材料,該電氣絕緣材料界定該圓盤之一頂表面;複數個電極,該複數個電極經嵌入在該電氣絕緣材料內;一內圓盤零件,該內圓盤零件形成一熱交換流體的一或更多個通道,且與該電氣絕緣材料熱連通;以及一導電板材,該導電板材經設置與該內圓盤零件鄰近;一桿,包含:一導電桿殼體,該導電桿殼體係與該板材電性耦接;以及複數個連接器,該複數個連接器包含該等電極的電氣連接器;以及一基座,包含:一導電基座殼體,該導電基座殼體係與該桿殼體電性耦接;以及一電氣絕緣終端段,該電氣絕緣終端段經設置在該基座殼體內,該複數個連接器穿行通過該終 端段。
- 如請求項1之晶圓夾具總成,該終端段包含聚醚醚酮。
- 如請求項1之晶圓夾具總成,該等連接器更包含用於一熱電偶(thermocouple)或一電阻溫度偵測器之一或更多個連接器。
- 如請求項1之晶圓夾具總成,該等連接器更包含一或更多個流體管道。
- 如請求項4之晶圓夾具總成,該一或更多個流體管道之至少一者經組態以提供一熱轉移氣體,該頂表面界定該熱轉移氣體的通道,該熱轉移氣體在該頂表面與一晶圓之一底表面之間散布。
- 如請求項1之晶圓夾具總成,該複數個電極的該等電氣連接器之各者包含一內導體、一繞該內導體的絕緣層、一繞該絕緣層的接地管、及一繞該接地管的陶瓷管。
- 如請求項1之晶圓夾具總成,更包含一晶圓處理系統,該晶圓夾具總成經設置在該晶圓處理系統中。
- 如請求項7之晶圓夾具總成,其中該晶圓處理系統包含:一製程腔室,該製程腔室以一或更多個腔室壁為 界;以及一或更多個電源;其中該晶圓夾具總成經設置以使得至少該圓盤係在該製程腔室內;且該一或更多個電源與該複數個電極耦接及與該一或更多個腔室壁之至少一者耦接,用以提供:一在該等電極與該一或多個腔室壁之至少一者之間的RF電壓;以及一跨該等電極的DC電壓差動,用於以靜電方式箝制一晶圓至該頂表面。
- 如請求項8之晶圓夾具總成,更包含一DC探針,該DC探針延伸通過該圓盤之該頂表面,該等連接器更包含用於該DC探針之一連接器。
- 如請求項9之晶圓夾具總成,其中該一或更多個電源之一電源回應於一來自該DC探針之信號,而調整一在該等電極之至少一者與該一或更多個腔室壁之至少一者之間的DC偏移。
- 如請求項1之晶圓夾具總成,更包含一連接零件,該連接零件經設置於該內圓盤零件與該電氣絕緣材料之間。
- 如請求項11之晶圓夾具總成,該連接零件包含鋁矽碳化物。
- 如請求項1之晶圓夾具總成,其中該導電基座殼體界定該熱交換流體之一或更多個通道。
- 一種電漿處理之方法,包含以下步驟:藉由使一熱交換流體流動通過一夾具之一內圓盤零件而穩定該夾具之溫度,該夾具具有一與該內圓盤零件熱連通之電氣絕緣頂表面;裝載一工件至該夾具上;跨嵌入至該電氣絕緣頂表面的兩個空間上分離的電極提供一DC電壓差動,用以箝制該工件至該夾具;在一環繞該夾具之腔室中提供製程氣體;以及在該夾具下方的一導電板材與該腔室之一或更多個壁之間提供一RF電壓,用以對一來自該等製程氣體之電漿引火。
- 如請求項14之電漿處理之方法,更包含以下步驟:使一熱轉移氣體流動通過該頂表面進入由該頂表面所界定的通道,其中該等通道允許該熱轉移氣體在該頂表面與該工件之間散布。
- 如請求項14之電漿處理之方法,其中穩定該夾具之溫度之步驟包含以下步驟:穩定該頂表面之溫度在一20C至150C的溫度範圍內。
- 如請求項14之電漿處理之方法,其中穩定該夾具之溫度之步驟更包含以下步驟:穩定一連接 零件之溫度,該連接零件包含經設置在該內圓盤零件與該頂表面之間的鋁矽碳化物,使得該夾具之一熱質量在裝載後迅速穩定該工件之一溫度。
- 如請求項14之電漿處理之方法,更包含以下步驟:回應於來自一延伸通過該頂表面之DC探針的信號而調整在該等電極之至少一者與該腔室之該一或更多個壁之至少一者之間的一DC偏置。
- 一種半導體晶圓,該半導體晶圓作為如請求項14之電漿處理之方法的工件而經處理。
- 如請求項14之電漿處理之方法,更包含以下步驟:使該熱轉移流體流動通過一基座,該基座與支撐該夾具之一桿的一桿殼體熱連通,該桿與該導電板材熱連通,使得該熱轉移流體穩定該基座、該桿殼體、及該導電板材之溫度。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI752522B (zh) * | 2019-07-11 | 2022-01-11 | 大陸商中微半導體設備(上海)股份有限公司 | 一種電漿處理器及基座溫度控制方法 |
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WO2016126425A1 (en) | 2016-08-11 |
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CN107533945A (zh) | 2018-01-02 |
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