KR102553118B1 - 플라즈마 처리 시스템을 위한 저온 척 - Google Patents
플라즈마 처리 시스템을 위한 저온 척 Download PDFInfo
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Abstract
웨이퍼 척 어셈블리는 퍽, 샤프트, 및 베이스를 포함한다. 퍽은 퍽의 최상부면을 정의하는 전기 절연성 재료를 포함하고, 복수의 전극은 전기 절연성 재료 내에 매립된다. 퍽은 열 교환 유체를 위한 하나 이상의 채널을 형성하는 내부 퍽 요소 - 내부 퍽 요소는 전기 절연성 재료와 열 연통함 - , 및 내부 퍽 요소에 근접하여 배치된 전기 전도성 플레이트를 또한 포함한다. 샤프트는 플레이트와 전기 결합되는 전기 전도성 샤프트 하우징, 및 전극들을 위한 전기 커넥터들을 포함하는 복수의 커넥터를 포함한다. 베이스는 샤프트 하우징과 전기 결합되는 전기 전도성 베이스 하우징, 및 베이스 하우징 내에 배치된 전기 절연성 단자 블록을 포함하고, 복수의 커넥터는 단자 블록을 통과한다.
Description
본 개시내용은 플라즈마 처리 장비의 분야에 광범위하게 적용된다. 더 구체적으로, 워크피스 상에 공간적으로 균일한 플라즈마 처리를 제공하기 위한 시스템들 및 방법들이 개시된다.
집적 회로들 및 다른 반도체 제품들은 "웨이퍼"라고 지칭되는 기판들의 표면들 상에 종종 제조된다. 때때로, 캐리어 내에 유지되어 있는 웨이퍼들의 그룹들에 처리가 수행되는 한편, 다른 때에는, 처리 및 테스트는 한 번에 하나의 웨이퍼에 수행된다. 싱글 웨이퍼 처리 또는 테스트가 수행될 때, 웨이퍼는 웨이퍼 척 상에 위치될 수 있다. 다른 워크피스들도 유사한 척들 상에서 처리될 수 있다.
실시예에서, 웨이퍼 척 어셈블리는 퍽, 샤프트, 및 베이스를 포함한다. 퍽은 퍽의 퍽의 최상부면을 정의하는 전기 절연성 재료를 포함하고; 복수의 전극은 전기 절연성 재료 내에 매립된다. 퍽은 또한 열 교환 유체를 위한 하나 이상의 채널을 형성하는 내부 퍽 요소 - 내부 퍽 요소는 전기 절연성 재료와 열 연통함 - , 및 내부 퍽 요소에 근접하여 배치된 전기 전도성 플레이트를 포함한다. 샤프트는 플레이트와 전기 결합되는 전기 전도성 샤프트 하우징, 및 전극들을 위한 전기 커넥터들을 포함하는 복수의 커넥터를 포함한다. 베이스는 샤프트 하우징과 전기 결합되는 전기 전도성 베이스 하우징, 및 베이스 하우징 내에 배치된 전기 절연성 단자 블록(electrically insulating terminal block)을 포함하고, 복수의 커넥터는 단자 블록을 통과한다.
실시예에서, 플라즈마 처리의 방법은 척의 내부 퍽 요소를 통한 열 교환 유체에 의해 척의 온도를 안정화하는 단계 - 척은 내부 퍽 요소와 열 연통하는 전기 절연성 최상부면을 가짐 - , 워크피스를 척 상에 로딩하는 단계, 및 워크피스를 척에 클램핑하기 위해 전기 절연성 최상부면 내의 2개의 공간적으로 분리된 전극 양단에 DC 전압 차동(DC voltage differential)을 제공하는 단계를 포함한다. 방법은 척을 둘러싸는 챔버 내에 프로세스 가스들을 제공하는 단계, 및 프로세스 가스들로부터 플라즈마를 점화(ignite)하기 위해, 척 아래의 전도성 플레이트와 챔버의 하나 이상의 벽 사이에 RF 전압을 제공하는 단계를 더 포함한다.
도 1은 실시예에 따라, 웨이퍼 처리 시스템의 주요 요소들을 개략적으로 도시한다.
도 2는 실시예에 따라 예시적인 컴포넌트 부품들을 보여주는, 도 1에 도시된 웨이퍼 척의 개략적인 도면이다.
도 3은 실시예에 따라 예시적인 컴포넌트 부품들을 보여주는, 웨이퍼 척을 포함하는 플라즈마 웨이퍼 처리 시스템의 개략적인 도면이다.
도 4는 웨이퍼 척 및 내부의 확산기의 부분들을 포함하는 도 3의 플라즈마 웨이퍼 처리 시스템의 부분의 개략도로서, 그들에 대한 예시적인 전력 공급 연결들을 도시한다.
도 5는 본 발명의 실시예에 따라 프로세스 중의 웨이퍼의 일부분을 도시한다.
도 6은 도 5의 웨이퍼 부분이 이온들을 조종하지 않는 플라즈마에 노출될 때의 가상 결과를 도시한다.
도 7은 실시예에 따라, 도 5의 웨이퍼가 이온들을 조종하는 플라즈마에 노출될 때의 결과를 도시한다.
도 2는 실시예에 따라 예시적인 컴포넌트 부품들을 보여주는, 도 1에 도시된 웨이퍼 척의 개략적인 도면이다.
도 3은 실시예에 따라 예시적인 컴포넌트 부품들을 보여주는, 웨이퍼 척을 포함하는 플라즈마 웨이퍼 처리 시스템의 개략적인 도면이다.
도 4는 웨이퍼 척 및 내부의 확산기의 부분들을 포함하는 도 3의 플라즈마 웨이퍼 처리 시스템의 부분의 개략도로서, 그들에 대한 예시적인 전력 공급 연결들을 도시한다.
도 5는 본 발명의 실시예에 따라 프로세스 중의 웨이퍼의 일부분을 도시한다.
도 6은 도 5의 웨이퍼 부분이 이온들을 조종하지 않는 플라즈마에 노출될 때의 가상 결과를 도시한다.
도 7은 실시예에 따라, 도 5의 웨이퍼가 이온들을 조종하는 플라즈마에 노출될 때의 결과를 도시한다.
본 개시내용은 이하에서 설명되는 도면들과 함께 취해지는 아래의 상세한 설명을 참조하면 이해될 수 있고, 여기서 유사한 참조 번호들은 몇몇 도면들 전체에서 유사한 컴포넌트들을 지칭하기 위해 이용된다. 도시의 명확성을 위해, 도면들 내의 일부 구성요소들은 비례에 맞춰 그려지지 않을 수 있음에 주목해야 한다. 항목의 구체적인 사례들(instances)은 괄호 내의 숫자[예를 들어, 커넥터들(230(1), 230(2) 등)를 이용하여 지칭될 수 있는 한편, 괄호가 없는 숫자들은 임의의 그러한 항목을 지칭한다[예를 들어, 커넥터들(230)]. 항목의 복수의 사례가 도시되는 경우들에서, 도시의 명확성을 위해, 사례들 중 일부만이 라벨링될 수 있다.
본 명세서의 실시예들은 웨이퍼 처리 시스템들을 위한 새롭고 유용한 기능을 제공한다. 수년간 상당하게, 반도체 웨이퍼 크기들이 증가한 한편 피쳐 크기들은 감소했고, 그에 의해, 처리되는 웨이퍼마다 더 큰 기능을 갖는 더 많은 집적 회로들이 수확될 수 있다. 전형적인 웨이퍼 직경들은 1970년대의 약 2 또는 3인치로부터 2010년대의 12인치 이상으로 증가했다. 동일한 기간 동안, 상업용 집적 회로들의 전형적인 최소 피쳐 크기들은 약 5 미크론으로부터 약 0.015 미크론까지 감소했다. 웨이퍼들이 커지는 동안 더 작은 피쳐들을 처리하기 위해서는, 처리 균일성의 상당한 개선이 필요하다. 화학 반응 속도들은 종종 온도에 민감하기 때문에, 처리 동안의 웨이퍼에 걸친 점 대 점 온도 제어(point to point temperature control)가 점점 중요해지고 있다. 예를 들어, 특정 타입의 처리에서, 웨이퍼 내에서의 섭씨 몇 도 이내의 점 대 점 온도 차이가 과거에는 허용가능했을 수 있지만, 현재는 그러한 차이들이 대략 1도 이하로 유지될 필요가 있을 수 있다. 집적 회로들 및 다른 디바이스들의 제조에서 이용되는 특정 재료들은 또한 매우 부식성인 플라즈마 환경들에서의 처리를 필요로 할 수 있다. 웨이퍼들이 아닌 워크피스들의 플라즈마 처리도 또한 개선된 처리 균일성으로부터 혜택을 받을 수 있고, 본 개시내용의 범위 내에 있는 것으로 고려된다. 따라서, 본 명세서에서 척들을 "웨이퍼들"을 유지하기 위한 "웨이퍼 척들"로서 특징짓는 것은 임의의 종류의 "워크피스들"을 유지하기 위한 "척들"과 등가인 것으로 이해되어야 하고, "웨이퍼 처리 시스템들"은 마찬가지로 "처리 시스템들"과 등가인 것으로 이해되어야 한다.
도 1은 웨이퍼 처리 시스템(100)의 주요 요소들을 개략적으로 도시한다. 시스템(100)은 싱글 웨이퍼 방식의 반도체 웨이퍼 처리 시스템으로서 도시되지만, 본 기술분야의 통상의 기술자에게는, 본 명세서의 기술들 및 원리들이 임의의 타입의 플라즈마 처리 시스템들(예를 들어, 반드시 웨이퍼들 또는 반도체들이 아닌 다른 타입의 워크피스들을 처리하는 시스템들)에 적용될 수 있음이 분명할 것이다. 또한, 도 1은 시스템(100)의 선택된 주요 요소들만을 개략적으로 도시하는 도면이며; 따라서, 실제 처리 시스템은 다르게 보일 것이고, 시스템(100)과 비교하여 추가의 요소들을 포함할 가능성이 높다는 것을 이해해야 한다.
웨이퍼 처리 시스템(100)은 프로세스 유체(들)(10), 외부 전력(20), 진공(30), 및 열 교환 유체(들)(35)와 같은 하나 이상의 유틸리티에 의해 서비스를 제공받는다. 웨이퍼 처리 시스템(100)은 하우징(110), 및 외부 소스들로부터 웨이퍼들(50)을 수용하고 그 웨이퍼들을 처리 위치(160) 내에 위치시키는 웨이퍼 인터페이스(115)를 포함한다. 웨이퍼 처리 시스템(100)은 또한 사용자 인터페이스(145)를 포함할 수 있고, 마이크로프로세서, 메모리 및 그와 유사한 것을 전형적으로 포함하는 제어기(135)는 사용자 인터페이스(145) 및/또는 다른 소스들로부터 입력을 취하고, 웨이퍼 처리 시스템(100)의 하드웨어 요소들에 대한 컴퓨터 기반 제어를 제공한다. 제어기(135)는 물리적(와이어 또는 광학 커넥터) 또는 무선 연결들일 수 있는 하나 이상의 데이터 링크(40)를 통해 외부 네트워크들 및/또는 컴퓨터들과 인터페이스할 수 있다. 웨이퍼 처리 시스템(100)은 또한 시스템의 하드웨어 요소들에 의한 사용을 위해 외부 전력(20)에 의해 공급되는 전력을 변환 또는 컨디셔닝하는 하나 이상의 내부 전력 공급부(150)를 포함할 수 있다.
처리 위치(160)는 웨이퍼 척(170) 상에서 각각의 웨이퍼(50)를 수용하고, 실시예들에서 웨이퍼 척은 3개의 부분, 즉 퍽(175), 퍽(175)을 지지하는 샤프트(180), 및 샤프트(180)를 지지하는 베이스(185)를 포함한다. 웨이퍼(50)는 물리적으로 퍽(175) 상에 위치되고, 실시예들에서 퍽에 의해 가열되고, 냉각되고/거나, 기계적으로 유지된다. 웨이퍼 척(170)은 또한 웨이퍼(50)를 퍽(175)에 정전 클램핑하고, 처리 위치(160) 내에서 플라즈마를 발생시키고, 및/또는 반응성 이온들을 플라즈마로부터 웨이퍼(50)에 지향시키기 위해, 무선 주파수(RF) 및/또는 직류 전류(DC) 전압을 웨이퍼(50)에 결합하도록 구성된다. 따라서, 처리 위치(160)는 웨이퍼(50)를 "플라즈마 생성물들"에 노출시키고, 본 명세서에서 플라즈마 생성물들은 플라즈마의 일부분이거나 한 때 플라즈마의 일부분이었던 임의의 재료로서 정의된다. 플라즈마 생성물들은 소스 가스들의 이온들, 라디칼들, 분자 단편들, 다른 활성화된 종들(species), 및/또는 플라즈마의 일부였지만 이온들, 라디칼들 등으로 변환되지 않은 소스 가스 원자들 또는 분자들 중 임의의 것 또는 전부를 포함할 수 있다. 본 명세서에서, 임의의 시간에서 플라즈마의 일부를 형성하지 않은 가스들은 "활성화되지 않은 가스들(unactivated gases)"이라고 정의된다.
실시예들에서, 퍽(175) 및/또는 샤프트(180)는 웨이퍼 핸들링 툴에의 접근을 위해 웨이퍼(50)를 다루도록 구성된다. 예를 들어, 실시예들에서, 샤프트(180)는 퍽(175)을 상승시켜 웨이퍼(50)가 그 위에 수용되게 하고, 후속하여 처리를 위한 다른 높이까지 퍽(175)을 하강시키거나, 그 반대로 할 수 있다. 이러한 실시예들 또는 다른 실시예들에서, 퍽(175) 및/또는 샤프트(180)는 퍽(175)의 최상부면에 대해 웨이퍼(50)를 상승 또는 하강시키는 액츄에이터들, 예컨대 퍽(175)으로부터 연장되거나 퍽 내에서 수축될 수 있는 리프트 핀들을 포함할 수 있고, 그에 의해 웨이퍼 툴은 웨이퍼(50)와 최상부면 사이에 삽입될 수 있다. 샤프트(180)는 또한 퍽(175)과의 전기적 및/또는 유체 연결을 용이하게 할 수 있다. 베이스(185)는 샤프트(180)를 하우징(110) 내에 기계적으로 앵커링하고, 실시예들에서, 전기적 유틸리티들 및/또는 유체들을 위해 샤프트(180)에 대한 인터페이스들을 제공한다. 베이스(185), 샤프트(180), 및 퍽(175)의 일부분들, 또는 이들의 임의의 조합은 서로와 함께 모놀리식 형성될 수 있거나, 아래에 더 설명되는 바와 같이 컴포넌트 부품들로부터 부분적으로 또는 완전하게 조립될 수 있다.
도 2는 예시적인 컴포넌트 부품들을 보여주는 웨이퍼 척(170)의 개략적인 도면이다. 도시의 명확성을 위해, 도 2는 비례에 맞게 그려지지 않았고, 웨이퍼 척(170)의 특정 컴포넌트들은 크기가 과장되거나 축소되어 있고, 각각의 컴포넌트의 모든 사례가 라벨링되지는 않으며, 컴포넌트들 사이의 내부 연결들 전부가 도시되지는 않는다. 도 1에 따르면, 웨이퍼 척(170)의 영역들은 퍽(175), 샤프트(180), 및 베이스(185)로서 식별되지만, 웨이퍼 척(170)의 특정 컴포넌트들은 이러한 영역들 중 둘 이상과 중첩될 수 있다. 퍽(175)은 절연성 최상부(205)를 포함하고, 전극들(210)은 절연성 최상부 내에 매립된다. 최상부(205)는 세라믹 또는 다른 전기 절연성 재료로 형성될 수 있고; 예를 들어, 실시예들에서, 최상부(205)는 알루미늄 질화물 또는 알루미나로 형성된다. 전극들(210)은 예를 들어 텅스텐 산화물과 같이, 중간 온도들 내지 높은 온도들을 견딜 수 있는 전도성 및/또는 저항성 재료로 형성될 수 있다.
최상부(205) 내의 선택적인 채널(207)은 최상부(205)와 웨이퍼(50) 사이의 열 전달을 개선하기 위해 헬륨과 같은 열 전달 가스를 웨이퍼(50)의 후면에 접촉시킨다. 개선된 열 전달은 웨이퍼가 완전하게 평평하지 않아서 최상부(205)의 최상부면과 균일하게 접촉하지 않는 경우들에서 도움을 줄 수 있고/있거나, 웨이퍼 상에서의 몇 도의 점-대-점의 범위로부터 1도 미만의 범위까지 열 균일성을 개선하는 데에 도움이 될 수 있다. 선택적인 채널들(208)은 채널(207)과 상호연결되고, 최상부(205)의 최상부면 내에서 서로 연결되며, 그에 의해 열 전달 가스는 웨이퍼(50)의 외측 에지를 지나갈 때까지 웨이퍼(50)의 최하부면과 최상부(205) 사이에서 확산될 수 있다.
금속, 예를 들어 알루미늄 또는 그 합금들로 형성될 수 있는 전기 전도성 플레이트(220)가 최상부(205) 아래에 배치된다. 플레이트(220)는 내부 퍽 요소(212)를 지지하고, 내부 퍽 요소 내에는 하나 이상의 열 교환 채널(215)이 정의된다. 열 교환 채널들(215)은 예를 들어 내부 퍽 요소(212) 내에서 나선형 구성으로 정의될 수 있다. 열 교환 채널들(215)은 채널들(215) 내에서 유동하는 열 교환 유체(35)(도 1 참조)와 내부 퍽 요소(212) 사이의 열 결합을 개선하기 위해, 도시된 바와 같이 내부 핀들(fins)(218)을 정의할 수 있다.
내부 퍽 요소(212) 및 플레이트(220) 위에는 연결 요소(connective element)(214)가 배치된다. 연결 요소(214)는 온도 변화 동안 인접 컴포넌트들과의 열 팽창 부정합 및/또는 기계적 응력을 수용하기 위해, 높은 열 전도율 및 상당히 높은 연성(ductility) 둘 다를 갖는 재료로 유리하게 형성된다. 실시예들에서, 연결 요소(214)의 제조는 유리하게는 높은 열 전도율, 및 적어도 내부 퍽 요소(212) 및 최상부(205)보다 높은 연성을 특징으로 하는 알루미늄 실리콘 카바이드(AlSiC)로 제조된다. AlSiC의 사용은 그 비용으로 인해 흔치 않은 것으로 고려될 수 있지만, 보다 더 전형적인 재료들의 사용과 비교하여 예상 밖의 양호한 결과들을 산출해내는 것으로 밝혀졌다. 연결 요소(214)는 도시된 바와 같이 볼트들(219)을 이용하여 플레이트(220)에 체결될 수 있다.
실시예들에서, 최상부(205)는 예를 들어 세라믹으로 이루어진 링(211)으로 연결 요소(214) 위에서 제자리에 유지된다. 링(211) 및/또는 최상부(205)를 연결 요소(214) 또는 플레이트(220)와 견고하게 체결하지 않으면서 기계적 안정성 및 양호한 열 결합을 제공하기 위해, 링(211)은 도시된 바와 같이 최상부(205) 위에, 그리고 연결 요소(214) 주위에 프레스핏(press-fit)될 수 있다. 유리하게, 이러한 방식으로 최상부(205)를 부착하면, 가열 또는 냉각 동안 최상부(205), 링(211), 및 연결 요소(214) 사이의 약간의 열 팽창 부정합이 수용된다. 링(211)은 또한 척(170) 외부에서의 플라즈마 및/또는 플라즈마 생성물들에 대한 노출로부터 볼트들(219)을 보호한다.
샤프트(180)에서, 전기 전도성 샤프트 하우징(222)은 최상부(205) 아래에 있고, 샤프트(180)를 위한 하우징을 형성한다. 샤프트 하우징(222)은 또한 예를 들어 알루미늄으로 이루어질 수 있고; 플레이트(220) 및 샤프트 하우징(222)은 전기 결합되고, 도 2에 도시된 바와 같이 일체형으로 형성될 수 있거나, 컴포넌트 부품들을 체결 또는 결합함으로써 조립될 수 있다. 샤프트 하우징(222)은 예를 들어 AlN 또는 Al2O3와 같은 세라믹 재료로 이루어지고 내부 컴포넌트들이 샤프트 하우징(222)에 대해 아크방전하거나 단락되는 것을 방지하는 데에 도움이 되는 선택적 절연 라이너(225)를 하우징한다. 절연 라이너(225)는 도 2에 도시된 바와 같이 내부 퍽 요소(212)와 일체로 형성될 수 있거나, 그와 분리하여 형성될 수 있다. 선택적으로, 절연 라이너(225)의 내부 표면들은 웨이퍼들이 척(170)에 이송될 때 및 척으로부터 이송될 때 척 표면에 진입할 수 있는 프로세스 가스들을 희석하고 제거하기 위해, 또는 열을 제거하기 위해, 헬륨 또는 질소와 같은 불활성 가스들로 플러싱될 수 있다.
샤프트(180)는 또한 전력 공급부들, 및 척(170)이 위치되는 장비의 다른 설비들과 퍽(175)의 피쳐들 사이의 다양한 커넥터들(230)을 하우징한다. 도 2에 도시된 예시적인 커넥터들(230)은 무선 주파수/직류 전류(RF/DC) 커넥터들[230(1), 230(2)]; 열 교환 유체 유입구 및 유출구[230(3), 230(4)]; 프로브 중심 탭 단자[230(5)]; 및 열전대(thermocouple: TC) 또는 저항 온도 검출기(resistance temperature detector: RTD) 와이어[230(6)][예를 들어, 도 2에서 싱글 커넥터로서 개략적으로 도시되어 있는 2-소자 와이어(two-element wire)]를 포함한다. 실시예들에서, 다른 커넥터들(230)이 가능하다. 커넥터들(230)은 싱글 또는 트위스티드 페어(twisted pair) 와이어들, 로드들, 동축 또는 다른 커넥터들, 절연되거나 절연되지 않은 와이어들, 또는 유체 도관들일 수 있다. 실시예들에서, 무선 주파수/직류 전류(RF/DC) 커넥터들[230(1), 230(2)]은 내부 전도체, 내부 전도체 주위의 절연층, 절연층 주위의 접지 튜브, 및 접지 튜브 주위의 세라믹 튜브를 포함한다. 도 2에 도시된 바와 같이 내부 퍽 요소(212)와 일체로 형성된 열 교환 유체 유입구 및 유출구[230(3), 230(4)]와 같이, 유체 도관들인 커넥터들(230)은 퍽 및/또는 베이스 요소들과 일체로 형성될 수 있다.
TC들 또는 RTD들은 임의의 개수로 구현될 수 있고, 열 교환 유체(35)의 온도 및 유량, 플라즈마 또는 플라즈마 생성물들에 의한 가열, 유동 가스들 또는 플라즈마 생성물들과의 상호작용에 의해 야기되는 가열 또는 냉각, 또는 다른 원인들에 의해 야기되는 온도 변동들에 대한 민감도를 위해 선택적으로 조직될 수 있다. 실시예들에서, 척(170)의 특징화(characterization)는 싱글 TC 또는 RTD가 척(170)의 온도를 정확하게 표현하도록, 주어진 구성의 척(170)에 걸쳐서 온도가 균일하다는 결정을 야기할 수 있다. 다른 실시예들에서, 복수의 TC 또는 RTD가 척(170)에 걸친 온도 균일성을 모니터링하여, 온도 균일성을 촉진하기 위해 열 교환 유체들(35)의 동작, 또는 척(170)이 위치되는 플라즈마 처리 시스템의 다른 양태들을 자동적으로 및/또는 수동적으로 조절하는 데에 이용될 수 있는 정보를 제공한다.
커넥터들(230)은 또한 유체 도관들일 수 있다. 커넥터들(230)이 유체 도관들로서 구성되는 것에 더하여, 또는 그것을 대신하여, 샤프트 하우징(222), 절연 라이너(225), 및/또는 그들 사이의 공간들이 유체 통로들을 갖고서 구성될 수 있다. 예를 들어, 후면 가스 소스(285)는 웨이퍼(50)에 걸친 개선된 열 제어를 위해, He 또는 다른 불활성 가스를 채널(207)에 공급한다.
퍽(175)을 가열 및/또는 냉각하기 위해 열 교환 유체(들)(35)를 이용하면, 약 20℃ 내지 150℃의 범위와 같은 비교적 낮은 온도 레짐에서 척(170), 및 척 상에서 처리되는 웨이퍼(50)의 열 관리가 단순해진다. 예를 들어, 외부 열 교환기는 원하는 척 온도에서 50% 물, 50% 에틸렌 또는 프로필렌 글리콜의 혼합물과 같은 가열/냉각 유체를 제공하도록 설정될 수 있다. 퍽(175)은 퍽(175) 상에 로딩되는 웨이퍼(50)가 원하는 온도에서 신속하게 퍽(175)과 열 평형을 이루게 하는 높은 열 용량을 구비하며; AlSiC로 형성된 연결 요소(214)의 포함은 높은 열 용량을 제공하는 데에 도움이 된다. 퍽(175)의 열 전도율, 및 열 교환 유체의 유량은, 플라즈마 발생의 가열 및/또는 냉각 효과들, 처리 위치(160) 내에서의 가스 유동들, 및 그와 유사한 것에도 불구하고, 퍽(175) 및 웨이퍼(50)가 원하는 온도로 남아있을 만큼 충분히 크다.
도 2의 커넥터들(230)의 개수 및 배열은 개략적인 것일 뿐이고; 커넥터들(230)은 샤프트(180)의 크기를 최소화하는 것, 인접 커넥터들(230) 사이의 공간을 최대화하는 것, 온도 균일성 및/또는 열 소산(heat dissipation)을 개선하는 것과 같은 목적, 및 다른 이유들을 위해 다르게 구성될 수 있고, 통상적으로 다르게 구성될 것이다.
척(170)의 베이스(185)는 금속(예를 들어, 알루미늄)으로 이루어질 수 있는 전기 전도성 베이스 하우징(270)을 포함하고, 샤프트 하우징(222)과 일체로 형성되거나, 파스너, 용접, 또는 그와 유사한 것에 의해 샤프트 하우징에 조립될 수 있다. 실시예들에서, 베이스 하우징(270)은 전기 절연성 단자 블록(275)을 포함하고, 커넥터들(230)은 전기 절연성 단자 블록(275)을 통과한다. 단자 블록(275)은 커넥터들[230(1)-230(6)]의 각각의 말단부들이 퍽(175) 내의 대응 소켓들과 짝을 이루게끔 배열되도록 커넥터들을 정렬하는 역할을 한다. 단자 블록(275)은 폴리에테르 에테르 케톤(PEEK) 또는 세라믹과 같은 절연체로 형성될 수 있고, PEEK 및 세라믹 둘 다는 높은 온도들에서 양호한 전기 저항성 및 안정성을 제공한다.
베이스 하우징(270)은 도시된 바와 같이 열 교환 유체(35)(도 1)를 위한 채널(280)과 같은 채널들을 내부에 포함할 수 있다. 채널(280)을 통과하는 열 교환 유체(35)는 가스 또는 액체일 수 있다. 실시예들에서, 채널(280)을 통과하는 열 교환 유체(35)는 물 및 에틸렌 글리콜, 또는 프로필렌 글리콜의 혼합물이고, 약 50% 물, 50% 글리콜의 배합 비율을 갖는다. 실시예들에서, 채널(280)을 통해 제공되는 냉각은 베이스 하우징(270)뿐만 아니라, 그와 기계적으로 연결된 샤프트 하우징(222) 및 전도성 플레이트(220)도 냉각한다. 베이스(185) 및 내부 퍽 요소(212) 둘 다에서 열 교환 유체(35)를 이용함으로써, 척(170)은 특별히 안정적인 열 성능을 제공할 수 있다.
베이스(185)는 웨이퍼 처리 장비의 관련 단편의 내부에 고정될 수 있거나, 웨이퍼 또는 다른 워크피스를 송출 또는 수용하고/거나 필요에 따라 웨이퍼 또는 워크피스를 정렬하도록 퍽(175)을 위치시키기 위해, 슬라이드들, 힌지들, 스테이지들, 또는 다른 디바이스들을 이용하여 이동가능하게 장착될 수 있다.
도 3은 예시적인 컴포넌트 부품들을 보여주는, 웨이퍼 척(170)을 포함하는 플라즈마 웨이퍼 처리 시스템(300)의 개략적인 도면이다. 도시의 명확성을 위해, 도 3은 비례에 맞게 그려지지 않았고, 플라즈마 웨이퍼 처리 시스템(300)의 특정 컴포넌트들은 크기가 과장되거나 축소되어 있고, 각각의 컴포넌트의 모든 사례가 라벨링되지는 않으며, 컴포넌트들 사이의 내부 연결들 전부가 도시되지는 않는다. 플라즈마 웨이퍼 처리 시스템(300)은 도 1의 웨이퍼 처리 시스템(100)의 예이다. 플라즈마 웨이퍼 처리 시스템(300)은 프로세스 챔버(305) 내에서 플라즈마 생성물들 및/또는 비활성화된 가스들을 이용하여 웨이퍼(50)를 처리하고; 도 3은 플라즈마 생성물들의 유동을 속이 빈 화살표들로서 보여주고 비활성화된 가스들의 유동을 굵은 화살표들로서 보여준다. 선택적인 원격 플라즈마 소스(310)는 제1 입력 가스 스트림[10(1)]으로부터 제1 플라즈마(도시되지 않음)를 생성하고, 선택적으로는 결과적인 플라즈마 생성물들을 제2 입력 가스 스트림[10(2)]과 혼합하여, 플라즈마 생성물들을 확산기(320)를 향해 전달한다. 플라즈마 생성물들은 프로세스 챔버(305)에 도입되기 전에 플라즈마 생성물들을 균일하게 분산시키는 역할을 적어도 하는 추가의 선택적 확산기들(320, 325, 및 340)을 통과할 수 있다. 도시된 구성에서, 제1 전력 공급부[150(1)]는 확산기들(325 및 340) 사이의 공간(330)에 걸쳐서 RF 에너지를 제공하여, 공간(330) 내에 제2 플라즈마(335)를 형성한다. 제1 플라즈마 및 제2 플라즈마로부터의 플라즈마 생성물들은 추가의 확산기(350)(때로는 "샤워헤드"라고 지칭됨)를 통해 추가의 입력 가스 스트림[10(3)]과 선택적으로 혼합될 수 있다. 확산기(350)는 플라즈마 생성물들을 통과시키기 위한 대형 포트들, 및 프로세스 챔버(305)를 향하는 확산기(350)의 면을 통해서만 입력 가스 스트림[10(3)]을 투과시키는 가스 통로들(360)을 갖고서 구성된다. 원격 플라즈마 소스(310) 및 확산기들(320, 325, 340, 및 350) 중 임의의 것 또는 전부의 이용은 선택적이라는 것을 알 것이다.
제2 전력 공급부[150(2)]는 RF 에너지 및/또는 DC 바이어스를 개략적으로 도시된 바와 같이 커넥터들[230(1) 및 230(2)]을 통해 척(170) 내의 전극들[210(1) 및 210(2)]에, 그리고 처리 시스템(300)의 다른 부분들에 제공하도록 제어가능하게 구성된다. RF 에너지 및/또는 DC 바이어스의 구체적인 연결들은 아래에 더 논의되는 바와 같이 달라질 수 있다. 전력 공급부[150(2)]는 예를 들어 전극들[210(1) 및 210(2)] 양단에 DC 바이어스를 제공할 수 있고, 전력 공급부[150(2)]와 확산기(350) 사이의 연결(151)에 의해 나타난 바와 같이 전극들[210(1) 및 210(2)]과 처리 시스템(300)의 다른 부품들 사이에 RF 에너지 및/또는 DC 바이어스를 제공할 수 있다. RF 에너지 및 DC 바이어스 둘 다를 제공하는 것은 아래에 더 논의되는 바와 같이, 웨이퍼(50)(또는 임의의 다른 워크피스)를 척(170)에 정전 클램핑하는 것, 프로세스 챔버(305) 내에 플라즈마를 발생시키는 것, 및 플라즈마의 이온들을 웨이퍼(50) 상의 특정 처리 사이트들에 지향시키는 것 모두를 위해 특히 유용하다. 전형적인 DC 클램핑 전압들은 대향 전극들[210(1) 및 210(2)]에 전달되는 ±200V인 한편, 전형적인 RF 전압들은 프로세스 챔버(305)에 걸쳐서 ±75V이며, 이것은 플라즈마에의 약 100-500W의 전력 전달에 대응한다. 처리 시스템(300)의 일부분이 도 4에 더 상세하게 도시되어 있다.
도 4는 웨이퍼 척(170) 및 확산기(350)의 부분들을 포함하는 플라즈마 웨이퍼 처리 시스템(300)의 부분의 개략도로서, 그에 대한 예시적인 전력 공급 연결들을 도시한다. 도시의 명확성을 위해, 도 4는 비례에 맞게 그려지지 않았고, 플라즈마 웨이퍼 처리 시스템(300)의 특정 컴포넌트들은 크기가 과장되거나 축소되어 있고, 각각의 컴포넌트의 모든 사례가 라벨링되지는 않으며, 컴포넌트들 사이의 내부 연결들 전부가 도시되지는 않는다. 도 4는 척(170) 및 확산기(350)의 개별 부분들에 의해 경계가 정해지는 프로세스 챔버(305), 웨이퍼(50), 프로세스 챔버(305) 내의 플라즈마(355)의 일부분, 및 전력 공급부[150(2)]의 예시적인 상세를 도시한다. 플라즈마(355)는 가스 스트림들[10(1), 10(2), 및/또는 10(3)]로부터, 그들의 본래의 비활성화된 형태들로, 또는 원격 플라즈마 소스(310) 내에서 또는 공간(330) 내에서 형성되는 플라즈마 생성물들로서 발생된다(도 3). 플라즈마(355)를 형성하기 위한 RF 에너지는 전력 공급부[150(2)] 내의 RF 소스(390)에 의해 공급된다. 도 4에 도시된 구성에서, 전력 공급부[150(2)]는 또한 전극들[210(1) 및 210(2)] 양단에 DC 바이어스(370)를 제공하고, 이는 웨이퍼(50)를 웨이퍼 척(170)에 정전 클램핑하는 역할을 한다. DC 전기장은 도 4에서 점선들로서 도시된다. 도 4에 도시된 실시예는 또한 전극들(210)과 확산기(350) 사이의 선택적인 DC 바이어스(380)를 포함한다. DC 바이어스(380)는 플라즈마(355) 내에서 형성된(또는 위에서 논의된 바와 같이 다른 위치들로부터의 플라즈마 생성물들 내에 존재하는) 이온들을 웨이퍼(50) 쪽으로 조종하여, 웨이퍼(50) 상의 플라즈마 처리의 지향성에 영향을 줄 수 있다(도 5 참조).
도 4는 또한 웨이퍼(50)의 실제 후면 DC 전압을 결정하기 위해 모니터링될 수 있는 중심 탭 DC 프로브(center tap DC probe)(395)를 보여준다. DC 프로브(395) 상에서 측정되는 전압은 웨이퍼(50) 상의 프로세스 결과들을 제어하고 최적화하기 위해, DC 바이어스(380)를 제어하도록 측정 및 이용될 수 있다. 예를 들어, 플라즈마 처리가 수행될 때, 플라즈마 생성물들 내의 반응성 종들은 종종 음으로 하전된 이온들(negatively charged ions)이고, 반응 시에 웨이퍼(50)에 음의 전하를 이송할 수 있다. 이것은 웨이퍼(50)의 대전(charging)을 야기하고; 처리 동안 웨이퍼(50)가 획득하는 전형적인 DC 전압은 약 -50V일 수 있다. 중심 탭 DC 프로브(395)는 이러한 전압이 감지되는 것을 허용하고, 따라서 DC 바이어스(380)를 그에 따라 조절함으로써 보상될 수 있다. 따라서, DC 프로브(395)는 DC 프로브(395) 상의 전압을 측정하는 고 임피던스 회로(398)와 결합되고, DC 바이어스(380)를 조절하기 위해 전력 공급부[150(2)]에 대한 적절한 정보를 제공한다.
특정 폴리머 또는 플라스틱, 고무, 및 그와 유사한 것과 같이 20℃ 내지 150℃ 온도 범위에서의 동작과 호환가능하지 않는 재료들을 이용할 수 있는 초창기의 시스템들과는 대조적으로, 웨이퍼 척(170)의 컴포넌트들, 및 웨이퍼 척과 통합된 컴포넌트들 전부는 약 20℃ 내지 150℃의 온도 범위와 호환가능하다. 플라즈마에 노출되는 컴포넌트들은 또한 NH3 또는 NF3가 각각 소스 가스들로서 이용될 때 생성되는 H* 또는 F* 라디칼들, 및 다른 것들과 같은 매우 가혹한 플라즈마 환경들을 견딜 수 있다. O2는 또한 (전자들을 공급하여 플라즈마 개시를 용이하게 하기 위해) 소스 가스로서 흔하게 첨가되어 추가의 이온 종들 및 라디칼들을 생성한다. 초창기의 시스템들은 종종 스테인레스 스틸 척들을 이용했지만, 스테인레스는 일반적으로 그러한 환경들에서 부식하여 미립자 오염을 야기한다. 처리 시스템(300) 내에서의 웨이퍼 척(170)의 배열은 균일한 온도에서 처리가 발생하는 것을 허용하는 한편, 열 전달을 위한 견고한 정전 클램핑, 및 부식 또는 열적 저하없이 반응성 이온 종들을 워크피스 쪽으로 조종하는 능력을 제공한다는 점에서 고유하다. 예를 들어, 본 명세서의 실시예들은 웨이퍼(50) 상의 특정 금속 및/또는 세라믹 재료들의 플라즈마 에칭을 가능하게 한다.
도 5, 도 6, 및 도 7은 본 명세서에 설명된 웨이퍼 척들 및 웨이퍼 처리 시스템들로 획득가능한 예시적인 처리 결과들을 도시한다. 도 5는 프로세스에서의 웨이퍼[50(1)]의 일부분을 도시한다. 웨이퍼[50(1)]는 내부에 깊은 트렌치들(410)을 형성하도록 이미 처리되어 있고, 필름[400(1)]이 웨이퍼[50(1)]의 최상부면들 상 및 트렌치들(410) 내 양쪽 모두에 퇴적되어 있다. 후속 처리는 웨이퍼[50(1)]의 특정 영역들로부터 필름[400(1)]을 제거하면서 다른 영역들 상에서는 필름[400(1)]을 남겨두도록 의도된 것이고; 따라서 포토레지스트(420)는 필름[400(1)]이 유지되어야 하는 영역들 내에 제공된다.
도 6은 예를 들어 웨이퍼[50(1)]를 반응성 종들이 확산에 의해 무작위로 단순하게 지향되는 플라즈마에 노출시킴으로써, 이온들을 조종하지 않는 플라즈마에 웨이퍼[50(1)]가 노출될 때의 가상 결과를 도시한다. 반응성 종들에 쉽게 노출되는 필름[400(1)]의 표면들은 에칭되는 한편, 웨이퍼[50(1)]는 반응성 종들과 반응하지 않는다. 이러한 프로세스는 포토레지스트(420)에 의해 보호되는 필름[400(4)]을 갖는 결과적인 웨이퍼[50(2)]를 남겨두지만, 또한 트렌치들(410) 내에 잔류 재료[400(3)]를 남겨둔다. 이는 반응성 종들이 무엇인가를 만날 때까지 단순히 이동하고, 다음으로 반응성 종들이 착지하는 곳에서 반응하기 때문에 발생한다. 트렌치들(410) 내로 깊게 침투하는 데에 요구되는 정확한 방향으로 이동하는 반응성 종들은 거의 존재하지 않는다. 무작위로 지향된 반응성 종들을 이용하여 잔류 재료[400(3)]를 제거할만큼 충분히 길게 웨이퍼[50(1)]를 에칭하는 것은 가능할 수도 있고 가능하지 않을 수도 있으며, 통상적으로는 실현가능하지 않다.
도 7은 이온들을 웨이퍼[50(1)] 쪽으로 지향시키는 전기장을 제공함으로써 이온들을 조종하는 플라즈마에 웨이퍼[50(1)]가 노출될 때의 결과; 즉 도 3 및 도 4에 도시된 바와 같이 웨이퍼 척(170)을 이용한 결과를 보여준다. 도 4에 나타난 전기장은 음으로 하전된 반응성 종들(negatively charged reactive species)을 도 7의 배향에서 아래쪽으로 지향시키고, 그에 의해 더 많은 반응성 종들이 트렌치들(410) 내에서 필름[400(1)]의 하부 영역들에 도달한다. 결과적인 웨이퍼[50(3)]는 도시된 바와 같이 본래의 필름[400(1)]이 포토레지스트(420)에 의해 보호되는 위치들에서만 필름[400(5)]을 보유한다.
본 명세서에 설명된 웨이퍼 척들에서 이용되는 재료들의 설계 및 타입들은 웨이퍼 척들에 대해 통상적으로 고려되던 것들이 아니다. 과거에, 웨이퍼 척들은 종종 단순한 금속 슬래브들(slabs of metal)로부터, 진공 또는 정전 클램핑, 조절가능한 웨이퍼 정렬/위치지정, 및 그와 유사한 것을 제공하는 약간 더 복잡한 시스템들까지에 이르는 상당히 단순한 것들이었다. 이러한 기능들 전부를 보유하면서도 고도의 부식성을 갖는 플라즈마 환경에서 정밀한 웨이퍼 횡단(cross-wafer) 온도 제어를 갖고서 열화없이 동작하는 설계들은 알려져있지 않다.
수 개의 실시예가 설명되었지만, 본 기술분야의 통상의 기술자라면, 본 발명의 사상으로부터 벗어나지 않고서 다양한 수정물들, 대안적인 구성들 및 등가물들이 이용될 수 있다고 인식할 것이다. 부가적으로, 본 발명을 불필요하게 모호하게 하는 것을 회피하기 위해, 다수의 잘 알려진 프로세스 및 요소는 설명되지 않았다. 따라서, 상술한 설명은 본 발명의 범위를 제한하는 것으로 간주되어서는 안 된다.
값들의 범위가 제공되는 경우, 맥락이 명백하게 다르게 지시하지 않는 한, 그 범위의 상한과 하한 사이에서 하한의 단위의 10분의 1까지의 각각의 중간 값이 구체적으로 개시된다는 점이 이해된다. 언급된 범위 내의 임의의 언급된 값 또는 중간 값과, 그 언급된 범위 내의 임의의 다른 언급된 값 또는 중간 값 사이의 각각의 더 작은 범위가 포괄된다. 이러한 더 작은 범위들의 상한 및 하한은 독립적으로 범위 내에 포함되거나 배제될 수 있고, 더 작은 범위 내에 이러한 상한과 하한 중 어느 하나 또는 둘 다가 포함되는, 또는 둘 다가 포함되지 않는 각각의 범위는 언급된 범위 내의 임의의 구체적으로 배제된 한계를 조건으로 하여 본 발명 내에 또한 포괄된다. 언급된 범위가 이러한 상한과 하한 중 하나 또는 둘 다를 포함하는 경우, 그러한 포함된 상한과 하한 중 어느 하나 또는 둘 다를 배제하는 범위도 또한 포함된다.
본 명세서 및 첨부된 청구항들에서 이용되는 바와 같이, 단수 형태("a", "an" 및 "the")는 맥락이 명확하게 다르게 지시하지 않는 한, 복수의 지시대상을 포함한다. 따라서, 예를 들어 "프로세스"에 대한 언급은 복수의 그러한 프로세스를 포함하고, "전극"에 대한 언급은 본 기술분야의 통상의 기술자에게 알려진 하나 이상의 전극 및 그들의 등가물들에 대한 언급 등을 포함한다. 또한, 본 명세서 및 이하의 청구항들에서 사용될 때의 용어 "포함한다"("comprise," "comprising," "include," "including," 및 "includes")는 언급된 특징들, 정수들, 컴포넌트들, 또는 단계들의 존재를 명시하도록 의도되지만, 그들은 하나 이상의 다른 특징들, 정수들, 컴포넌트들, 단계들, 동작들 또는 그룹들의 존재 또는 추가를 배제하지 않는다.
Claims (17)
- 웨이퍼 척 어셈블리로서,
퍽(puck) - 상기 퍽은,
상기 퍽의 최상부면을 정의하는 전기 절연성 재료 - 상기 전기 절연성 재료는 상기 전기 절연성 재료의 외측 반경(outer radius)까지 연장되는 리세스된 레지(recessed ledge)를 정의함 -,
상기 전기 절연성 재료 내에 매립되는 복수의 전극,
열 교환 유체를 위한 하나 이상의 채널을 형성하며, 상기 전기 절연성 재료와 열 연통하는 내부 퍽 요소(inner puck element),
상기 내부 퍽 요소에 근접하여 배치된 전기 전도성 플레이트 - 상기 전기 전도성 플레이트는 바디(body)를 포함하고, 상기 전기 전도성 플레이트의 상기 바디는 상기 전기 전도성 플레이트 내에 리세스된 공동(recessed cavity)을 정의함 -, 및
바디를 포함하는 링 - 상기 링의 상기 바디는 상기 링의 상기 바디의 후면에 걸쳐 접촉 표면(contact surface)을 정의함 -
을 포함함 - ;
샤프트 - 상기 샤프트는,
상기 플레이트와 전기 결합되는 전기 전도성 샤프트 하우징, 및
상기 전극들을 위한 전기 커넥터들을 포함하는 복수의 커넥터
를 포함함 - ;
베이스 - 상기 베이스는,
상기 샤프트 하우징과 전기 결합되는 전기 전도성 베이스 하우징, 및
상기 베이스 하우징 내에 배치된 전기 절연성 단자 블록(electrically insulating terminal block) - 상기 복수의 커넥터는 상기 단자 블록을 통과함 -
을 포함함 -; 및
상기 내부 퍽 요소와 상기 전기 절연성 재료 사이에 배치되고, 알루미늄 실리콘 카바이드를 포함하는 연결 요소(connective element)
를 포함하고,
상기 접촉 표면은, 상기 전기 절연성 재료의 상기 리세스된 레지 상에 배치되고 상기 리세스된 레지와 접촉하며, 상기 전기 전도성 플레이트 내에 상기 리세스된 공동을 정의하는 상기 전기 전도성 플레이트의 일부 상에 배치되고 상기 전기 전도성 플레이트의 일부와 접촉하는, 웨이퍼 척 어셈블리. - 제1항에 있어서, 상기 단자 블록은 폴리에테르 에테르 케톤을 포함하는, 웨이퍼 척 어셈블리.
- 제1항에 있어서, 상기 커넥터들은 열전대(thermocouple) 또는 저항 온도 검출기(resistance temperature detector)를 위한 하나 이상의 커넥터를 더 포함하는, 웨이퍼 척 어셈블리.
- 제1항에 있어서, 상기 커넥터들은 열 전달 가스(heat transfer gas)를 제공하도록 구성된 하나 이상의 유체 도관을 더 포함하고, 상기 최상부면은 상기 열 전달 가스가 웨이퍼의 최하부면과 상기 최상부면 사이에서 확산되기 위한 채널들을 정의하는, 웨이퍼 척 어셈블리.
- 제1항에 있어서, 상기 복수의 전극을 위한 전기 커넥터들 각각은 내부 전도체, 상기 내부 전도체 주위의 절연층, 상기 절연층 주위의 접지 튜브, 및 상기 접지 튜브 주위의 세라믹 튜브를 포함하는, 웨이퍼 척 어셈블리.
- 제1항에 있어서, 상기 웨이퍼 척 어셈블리가 배치되는 웨이퍼 처리 시스템을 더 포함하고, 상기 웨이퍼 처리 시스템은,
하나 이상의 챔버 벽에 의해 경계가 정해지는 프로세스 챔버, 및
하나 이상의 전력 공급부
를 포함하고,
상기 웨이퍼 척 어셈블리는 적어도 상기 퍽이 상기 프로세스 챔버 내에 있도록 배치되고,
상기 하나 이상의 전력 공급부는 상기 복수의 전극, 및 상기 하나 이상의 챔버 벽 중의 적어도 하나와 결합하여,
상기 전극들과 상기 하나 이상의 챔버 벽 중의 상기 적어도 하나 사이의 RF 전압, 및
웨이퍼를 상기 최상부면에 정전 클램핑하기 위한, 상기 전극들 양단의 DC 전압 차동(DC voltage differential)
을 제공하는, 웨이퍼 척 어셈블리. - 제6항에 있어서,
상기 퍽의 상기 최상부면을 통해 연장되는 DC 프로브를 더 포함하고,
상기 커넥터들은 상기 DC 프로브를 위한 커넥터를 더 포함하고, 상기 하나 이상의 전력 공급부 중의 전력 공급부는 상기 DC 프로브로부터의 신호에 응답하여 상기 전극들 중 적어도 하나와 상기 하나 이상의 챔버 벽 중의 상기 적어도 하나의 사이에서의 DC 오프셋을 조절하는, 웨이퍼 척 어셈블리. - 삭제
- 제1항에 있어서, 상기 전기 전도성 베이스 하우징은 열 교환 유체를 위한 하나 이상의 채널을 정의하는, 웨이퍼 척 어셈블리.
- 플라즈마 처리의 방법으로서,
척의 내부 퍽 요소를 통해 열 교환 유체를 유동시킴으로써 상기 척의 온도를 안정화하는 단계 - 상기 척은 상기 내부 퍽 요소와 열 연통하는 전기 절연성 최상부면을 갖고, 상기 전기 절연성 최상부면은 상기 전기 절연성 최상부면의 외측 반경까지 연장되는 리세스된 레지(recessed ledge)를 정의함 - ;
상기 척 상에 워크피스를 로딩하는 단계;
상기 워크피스를 상기 척에 클램핑하기 위해 상기 전기 절연성 최상부면 내에 매립된 2개의 공간적으로 분리된 전극 양단에 DC 전압 차동을 제공하는 단계;
상기 척을 둘러싸는 챔버 내에 프로세스 가스들을 제공하는 단계; 및
상기 프로세스 가스들로부터 플라즈마를 점화하기 위해, 상기 척 아래의 전도성 플레이트와 상기 챔버의 하나 이상의 벽 사이에 RF 전압을 제공하는 단계
를 포함하고,
상기 전도성 플레이트는 상기 전도성 플레이트 내에 리세스된 공동을 정의하는 바디를 포함하고, 링의 후면을 가로지르는 접촉 표면은 상기 전기 절연성 최상부면의 상기 리세스된 레지 상에 배치되고 상기 리세스된 레지와 접촉하며, 상기 전도성 플레이트 내에 상기 리세스된 공동을 정의하는 상기 전도성 플레이트의 일부 상에 배치되고 상기 전도성 플레이트의 일부와 접촉하며,
상기 척의 온도를 안정화하는 단계는, 상기 내부 퍽 요소와 상기 최상부면 사이에 배치되고 알루미늄 실리콘 카바이드를 포함하는 연결 요소의 온도를 안정화하여, 상기 척 상에 상기 워크피스를 로딩한 이후 상기 워크피스의 온도가 상기 척과의 열 교환에 의해 신속하게 안정되게 하는 단계를 더 포함하는, 방법. - 제10항에 있어서, 열 전달 가스를 상기 최상부면을 통해 상기 최상부면에 의해 정의되는 채널들 내로 유동시키는 단계를 더 포함하고, 상기 채널들은 상기 열 전달 가스가 상기 최상부면과 상기 워크피스 사이에 확산되는 것을 허용하는, 방법.
- 제10항에 있어서, 상기 척의 온도를 안정화하는 단계는 상기 최상부면의 온도를 20℃ 내지 150℃의 온도 범위 내에서 안정화하는 단계를 포함하는, 방법.
- 삭제
- 제10항에 있어서, 상기 최상부면을 통해 연장되는 DC 프로브로부터의 신호에 응답하여, 상기 전극들 중 적어도 하나와 상기 챔버의 상기 하나 이상의 벽 중의 적어도 하나의 사이에서의 DC 오프셋을 조절하는 단계를 더 포함하는 방법.
- 제10항에 있어서, 상기 척을 지지하는 샤프트의 샤프트 하우징과 열 연통하는 베이스를 통해 열 교환 유체를 유동시키는 단계를 더 포함하고, 상기 샤프트는 상기 열 교환 유체가 상기 베이스, 상기 샤프트 하우징, 및 상기 전도성 플레이트의 온도를 안정화하도록 상기 전도성 플레이트와 열 연통하는, 방법.
- 제1항에 있어서,
상기 내부 퍽 요소는 상기 하나 이상의 채널 내에 배치되는 적어도 하나의 내부 핀(internal fin)을 포함하는, 웨이퍼 척 어셈블리. - 제1항에 있어서,
상기 링은 상기 전기 절연성 재료의 상기 리세스된 레지 위에 그리고 상기 연결 요소 주위에 프레스핏(press-fit)되는, 웨이퍼 척 어셈블리.
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WO2016126425A1 (en) | 2016-08-11 |
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TWI726860B (zh) | 2021-05-11 |
JP2018506852A (ja) | 2018-03-08 |
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TW201631694A (zh) | 2016-09-01 |
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CN107533945B (zh) | 2020-03-17 |
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