JP5707341B2 - Rf電力をプラズマチャンバの内部に結合させるための装置 - Google Patents
Rf電力をプラズマチャンバの内部に結合させるための装置 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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Description
図2は、本発明の一実施の形態を含むプラズマチャンバを示す。本発明を記述する前に、プラズマチャンバの従来の特徴を以下に示す。
プラズマチャンバは、上述のように、RF電源32と整合回路網34によってRF電力が供給されるRF入力部40を含む。本発明の新規な特徴は、プラズマチャンバのRF入力部40からのRF電力を、プラズマチャンバの電極20〜26上の1個又はそれ以上のRF接続点41、42と結合する1つ以上のRF母線導体43、44である。電極は、RF電力を電極と加工物10を支持するサセプタ12との間のプラズマチャンバの内部11のプラズマと容量的に結合する。
3.RF母線とRF電力分布の対称性
4.RF母線とRF帰還母線の曲率
RF母線導体43、44は、好ましくは、形状が長方形の横断面を持ち、該長方形の長手寸法がマニフォールド背面壁部20の隣接面に垂直に向けられている。このようなRF母線導体の例は、金属ストリップである。薄い幅広の金属ストリップは、図3、6および9に示すように「U」字型に容易に曲げることができ、その結果、マニフォールドの中心から大きな半径方向の距離を維持できる。
図示された実施の形態において、ガス注入マニフォールド20〜26は、RF電源32からのRF電力をプラズマチャンバ内のプラズマと結合する機能を持つ電極である。しかし、図示した実施の形態のRF接続点41、42は、電極がガス分配の機能をも持つか否かに関わらず、いかなる従来のプラズマチャンバ電極上のRF接続点と置き換えることもできる。換言すれば、電極はガス注入マニフォールドの一部である必要は無く、またシャワーヘッドを含む必要も無い。従って、ここでのマニフォールド背面壁部への言及はすべて、そうしたRF接続点41、42を持つ電極への言及と置き換えることができる。
Claims (8)
- 1つまたはそれ以上の電気的に接地されたチャンバ壁部を有し、かつ、電気的接地から絶縁されたプラズマチャンバ電極を有するプラズマチャンバであって、プラズマチャンバ電極が、間隔を置いて配置された第1と第2の接続点を含むプラズマチャンバと、
(i)RF入力部と電気的に接続され、かつ、(ii)プラズマチャンバ電極の第1と第2の接続点にそれぞれ電気的に接続された第1と第2の接続点を含む、RF母線導体であって、RF母線導体の第1と第2の接続点の間のRF母線導体の部分が、プラズマチャンバ電極に電気的に接続されておらず、第1と第2の接続点の間のRF母線導体が平面である第1面を含むRF母線導体と、
電気的に接地されたチャンバ壁部の各々とは別個であり、電気的に接地されたチャンバ壁部の1つと電気的に接続され、そして、平面であり、第1面に平行かつ対面して配置された第2面を含むRF帰還母線導体と、
を備えた、RF入力部からのRF電力をプラズマチャンバの内部に結合させるための装置であって、
第1面と第2面がある隙間だけ分離されており、RF母線導体の第1面に平行である電気的に接地されたチャンバ壁部のそれぞれが、その隙間より大きい距離だけ第1面から離れて間隔があけられている装置。 - 1つまたはそれ以上の電気的に接地されたチャンバ壁部を有し、かつ、電気的接地から絶縁されたプラズマチャンバ電極を有するプラズマチャンバであって、プラズマチャンバ電極が、間隔を置いて配置された第1と第2の接続点を含むプラズマチャンバと、
(i)RF入力部と電気的に接続され、かつ、(ii)プラズマチャンバ電極の第1と第2の接続点にそれぞれ電気的に接続された第1と第2の接続点を含む、RF母線導体であって、RF母線導体の第1と第2の接続点の間のRF母線導体の部分が、プラズマチャンバ電極に電気的に接続されておらず、第1と第2の接続点の間のRF母線導体が平面である第1面を含むRF母線導体と、
電気的に接地されたチャンバ壁部の各々とは別個であり、電気的に接地されたチャンバ壁部の1つと電気的に接続され、そして、平面であり、第1面に平行かつ対面して配置された第2面を含むRF帰還母線導体と、
を備えた、RF入力部からのRF電力をプラズマチャンバの内部に結合させるための装置であって、
RF母線導体とRF帰還母線導体との間のキャパシタンスは、RF母線導体と1つまたはそれ以上の電気的に接地されたチャンバ壁部との間のキャパシタンスより大きい装置。 - 1つまたはそれ以上の電気的に接地されたチャンバ壁部に囲まれたプラズマチャンバと、
電気的接地から絶縁されたプラズマチャンバ電極であって、背面壁部と、背面壁部の下部に配置されたシャワーヘッドと、背面壁部とシャワーヘッドの間に接続された導電体とを含むプラズマチャンバ電極と、
RF入力部と電気的に接続され、かつ背面壁部上に間隔を置いて配置された少なくとも第1と第2の接続点と電気的に接続されたRF母線導体であって、RF母線導体の第1と第2の接続点の間のRF母線導体の部分が、プラズマチャンバ電極に電気的に接続されておらず、第1と第2の接続点の間のRF母線導体が第1面を含むRF母線導体と、
電気的に接地されたチャンバ壁部の各々とは別個であり、かつ電気的に接地されたチャンバ壁部の1つと電気的に接続されたRF帰還母線導体であって、第2面を含むRF帰還母線導体と、
第1と第2の接続点の間の背面壁部の中央に接続されたガス注入管と、
を備えた、RF入力部からのRF電力をプラズマチャンバの内部に結合するための装置であって、
第1面が、第2面と平行であり、かつ第2面と対面しており、
接続点のいずれも背面壁部の中心位置には無く、
RF母線導体が、第1と第2の接続点にそれぞれ接続された向かい合った端を有するU字型の導体を含み、
RF帰還母線導体がU字型の導体を含む装置。 - プラズマチャンバ電極が、RF母線導体とRF帰還母線導体に面し、かつプラズマチャンバ電極の第1と第2の接続点を含む、表面を含み、
第1面と第2面が、プラズマチャンバ電極の前記表面に垂直である請求項1から3のいずれか一項に記載の装置。 - RF母線導体が、プラズマチャンバ電極の第1と第2の接続点の間のRF母線導体を通るRF電流のための接続経路を提供し、
RF母線導体の前記第1面が接続経路の長さの2分の1より大きい長さを有する請求項1から4のいずれか一項に記載の装置。 - 前記RF入力部と接続された出力部を有するRFインピーダンス整合回路網であって、RFインピーダンス整合回路網の出力部からプラズマチャンバ電極上の前記接続点への電気接続経路を提供するRFインピーダンス整合回路網をさらに備え、
RFインピーダンス整合回路網の出力部から前記接続点の1つへと延在する電気接続経路の少なくとも2分の1の長さが、RF母線導体を含む請求項1から5のいずれか一項に記載の装置。 - プラズマチャンバ電極が、
ガス注入管を有する背面壁部と、
背面壁部の下部に設置されているシャワーヘッドと、
背面壁部とシャワーヘッドとの間に接続されている導電体とを備え、
プラズマチャンバ電極の第1と第2の接続点が、背面壁部上にある請求項1から6のいずれか一項に記載の装置。 - RF母線導体と接続点の1つとの間に接続されたキャパシタをさらに含む請求項1から7のいずれか一項に記載の装置。
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US15260109P | 2009-02-13 | 2009-02-13 | |
US61/152,601 | 2009-02-13 | ||
PCT/US2010/024206 WO2010094002A2 (en) | 2009-02-13 | 2010-02-13 | Rf bus and rf return bus for plasma chamber electrode |
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JP5707341B2 true JP5707341B2 (ja) | 2015-04-30 |
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JP (1) | JP5707341B2 (ja) |
KR (1) | KR101617781B1 (ja) |
CN (1) | CN102365906B (ja) |
TW (1) | TWI530232B (ja) |
WO (1) | WO2010094002A2 (ja) |
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WO2010094002A2 (en) | 2010-08-19 |
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