CN106480428A - 通过peald形成氮化铝基膜的方法 - Google Patents

通过peald形成氮化铝基膜的方法 Download PDF

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CN106480428A
CN106480428A CN201610715876.3A CN201610715876A CN106480428A CN 106480428 A CN106480428 A CN 106480428A CN 201610715876 A CN201610715876 A CN 201610715876A CN 106480428 A CN106480428 A CN 106480428A
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layer
aln
alo
film
precursor
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芝英郎
芝英一郎
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ASM IP Holding BV
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Abstract

一种用于通过等离子体增强的原子层沉积(PEALD)在基材上形成氮化铝基膜的方法，所述方法包括：(a)形成至少一层氮化铝(AlN)单层和(b)形成至少一层氧化铝(AlO)单层，其中步骤(a)和(b)连续交替进行以形成层叠体。步骤(a)和(b)在层叠体的总厚度超过10nm，优选5nm前停止。

Description

通过PEALD形成氮化铝基膜的方法
背景
发明领域
本发明一般涉及一种用于通过等离子体增强的原子层沉积(PEALD)在基材上形成氮化铝基膜的方法。
背景技术
铜(Cu)已在硅器件的多级互联中用作主要的线材料。由于铜容易扩散至晶体管层、绝缘层或类似的层，因此使用Ta/TaN或类似物作为朝向Cu线的侧面和底部的阻挡金属层，并且将SiN、SiCN或类似物通常用作沉积在Cu线顶部上的扩散阻挡层和/或蚀刻停止层。
为了实现硅器件的速度增加和能量节约，必需降低器件自身的有效介电常数，而常用的扩散阻挡层和蚀刻停止层并不令人满意。有很多降低有效介电常数的方法。例如，通过制备薄的扩散阻挡层和蚀刻停止层，可降低器件的有效介电常数。不过，当膜的厚度在3-5nm的极低范围时，电子的隧道效应变得更显著，因此增加了所述层的漏电流。
希望用氮化铝(AlN)替代SiCN用作扩散阻挡层和蚀刻停止层。本发明人对通过超薄AlN膜的漏电流改善进行了研究。
本发明中包括的与背景技术相关的任何问题的讨论和方案仅用于为本发明提供背景的目的，不应作为对本发明开发时已知的任何或所有讨论的认同。
概述
在一些实施方式中，由AlN层和AlO层构成的层叠体通过PEALD形成并替代了AlN膜。令人惊讶的是，与AlN膜相比，所述层叠体甚至当所述膜极薄(例如具有约3nm的总厚度)时仍可显著地改善漏电流。所述层叠体可认为是氧氮化铝(AlON)膜，但其是氮化铝基膜，其中AlN是所述层叠体的主要组分。因此，所述层叠体可有效地用作扩散阻挡层和/或蚀刻停止层，代替AlN膜。
出于总结本发明各方面和相对于背景技术所取得的益处的目的，在本文中描述本发明的某些目标和益处。当然，应理解本发明的任意具体实施方式不必然能实现所有的这些目的或优点。因此，例如本领域普通技术人员将理解可以下述方式实施或进行本发明：取得或优化本文所教导的一种或更多种优点，而不必然取得本文所可能教导或暗示的其它目的或优点。
本发明的其它方面、特征和优点会在以下详细说明中变得显而易见。
附图说明
现结合优选的实施方式的附图说明本发明的这些或其它特征，这旨在说明本发明而不是限制本发明。为了说明目的，附图被大大简化并且不一定按比例绘制。
图1A是示意图，说明了用于沉积能在本发明的实施方式中使用的介电膜的PEALD(等离子体增强的原子层沉积)设备。
图1B说明了示意图，表示使用流动通过系统(FPS)的能在本发明的实施方式中使用的前体供应系统。
图2说明了根据本发明的一个实施方式的PEALD过程顺序。
图3是显示比较例中具有各种膜厚的AlN膜的漏电流性质的图。
图4是显示在根据本发明的实施方式的实施例中具有各种膜厚的AlN/AlO层层叠体的漏电流性质的图。
图5a至图5d说明了在实施例中使用的层结构。
具体实施方式
在本文中，“气体”可包括蒸发的固体和/或液体并可由单一气体或气体混合物构成。在本文中，通过喷淋头被引入到反应室中的处理气可包含前体气体和添加气体、基本由前体气体和添加气体组成或由前体气体和添加气体组成。所述前体气体和添加气体通常作为混合的气体或分别被引入到反应空间中。可使用载气(例如惰性气体)来引入前体气体。所述添加气体可包含反应气体和稀释气(例如惰性气体)、基本由反应气体和稀释气体(例如惰性气体)组成或由反应气体和稀释气体(例如惰性气体)组成。所述反应气体和稀释气体可作为混合的气体或分别被引入到反应空间中。前体可包含两种或更多种前体，反应气体可包含两种或更多种反应气体。所述前体是在基材上化学吸附的气体并且通常含有铝元素，所述铝元素构成了介电膜基质的主要结构，所述用于沉积的反应气体是当所述气体被激发时与在基材上化学吸附的前体反应从而将原子层或单层固定在基材上的气体。“化学吸附”是指化学饱和吸附。不同于工艺气体的气体，即以不通过喷淋头的方式引入的气体，可用于例如密封所述反应空间，所述气体包括密封气体，例如惰性气体。在一些实施方式中，“膜”是指基本没有针孔的，在垂直于厚度方向的方向上连续延伸以覆盖整个目标物或相关表面的层，或者“膜”是覆盖目标物或相关表面的简单的层。在一些实施方式中，“层”指在表面或膜的同义词或非膜结构上形成的具有特定厚度的结构。膜或层可由具有某些特征的离散的单一膜或层或多层的膜或层构成，相邻膜或层之间的边界可清晰或不清晰并且所述边界可根据相邻膜或层的物理、化学、和/或任何其它特征、形成方法或顺序、和/或功能或目的建立。
此外，在本文中，除非另外说明，“一种”或“一个”是指一个对象或包括多个对象的一个组合。在一些实施方式中，术语“由……构成”和“具有”独立地指“通常或广泛地包含”、“包含”、“基本由……组成”或“由……组成”。同样，在本文中，任何限定的含义并不必然排除在一些实施方式中普通和自定义含义。
此外，在本文中，当可行范围可根据常规方式决定时，变量的任意两个数字可构成该变量的可行范围，并且任何显示的范围可包括端点或排除端点。此外，在一些实施方式中，显示的变量的任何值(无论它们与“约”一起显示或没有与“约”一起显示)可指精确值或近似值并包括等效值，可指均值、中值、代表值、大多数等。
在本发明中，当没有说明条件和/或结构时，本领域技术人员可从本发明的角度出发，按常规试验容易地提供所述条件和/或结构。在所有公开的实施方式中，出于预期的目的，实施方式中使用的任何元素可用与其等效的任何元素替代，包括本文明确地、必需地或固有地公开的那些。此外，本发明可等同地应用于设备和方法。
借助优选的实施方式解释所述实施方式。然而，本发明不局限于所述优选的实施方式。
一些实施方式提供了一种用于通过等离子体增强的原子层沉积(PEALD)在基材上形成氮化铝基膜的方法，所述方法包括：(a)形成至少一层氮化铝(AlN)单层；和(b)形成至少一层氧化铝(AlO)单层，所述方法包括：(i)进行步骤(a)至少一次；(ii)进行步骤(b)至少一次，其中步骤(a)和(b)以此顺序或相反的顺序连续交替进行而在它们中间不形成任何其它中间层，从而形成通过AlN层和AlO层交替沉积而构成的AlN基膜层叠体；以及(iii)在所述层叠体的总厚度超过10nm之前停止步骤(i)和(ii)，其中由AlN层构成的部分的厚度大于由AlO层构成的部分的厚度。词语“停止步骤(i)和(ii)”是指停止或终止步骤(i)和(ii)，随后马上进行不同的步骤，而不恢复步骤(i)或(ii)，或不进行与所述层叠体有关的任何其它步骤。“氮化铝基膜”可也指“层叠的氮氧化铝(AlON)膜”、“氧掺杂的氮化铝膜”、“氧扩散的氮化铝膜”、“AlN/AlO叠置多层膜”、“AlN/AlO双层膜”或类似的膜，其可替代半导体器件中的氮化铝膜。在一些实施方式中，氮化铝基膜可合适地用作扩散阻挡膜或蚀刻停止膜而不需要任何沉积后处理，例如热处理或退火、或等离子体处理，并且不需要将处理过的基材转移到另一反应室中。在一些实施方式中，在同一反应室中进行步骤(i)和步骤(ii)。
在一些实施方式中，即使当层叠体的总厚度为10nm或更小时，漏电流仍可被显著地改善。不被理论所限制，这可能是由于电子被困于AlN层和AlO层之间的界面处，从而减少了漏电流，或者是由于AlN层被氧化并且从而得到AlO层的漏电流性质。当AlO层被沉积在AlN层上时，氧原子渗透了界面并且扩散或分散在AlN层中，并且当AlN层被沉积在AlO层上时，氮和/或氢原子渗透了界面并且扩散或分散在AlO层中，从而作为层叠体改善了漏电流。考虑到氧原子(或氮和氢原子)的渗透深度，在一些实施方式中，在步骤(iii)中，步骤(i)和(ii)在所述层叠体总厚度超过5nm(或3nm)之前停止。
在一些实施方式中，至少一层AlN单层具有至少0.2nm(通常至少为0.5nm)的厚度，至少一层AlO单层具有至少0.2nm(通常至少为0.5nm)的厚度，从而可构成层叠体的各种层结构，并且包括漏电流性质的膜性质可有效地调节。在一些实施方式中，所述至少一层AlN单层具有0.3-3nm的厚度，至少一层AlO单层具有0.3-2nm的厚度。
在一些实施方式中，AlN单层首先沉积在基材上并与所述基材接触，从而可避免下方的层(例如所述基材的铜线图案)的氧化。在其它实施方式中，AlO单层首先沉积在基材上并与所述基材接触。
在AlN单层首先沉积的实施方式中，步骤(i)进行两次，步骤(ii)进行一次，从而所述层叠体由两层AlN层和一层介于所述两层AlN层之间的AlO层构成。在一些实施方式中，所述基材在其表面上具有铜线图案，并且所述AlN基膜沉积在铜线图案上作为扩散阻挡膜或蚀刻停止膜。在一些实施方式中，所述层叠体的总层数可为2-20、2-10或2-5。
在一些实施方式中，步骤(i)和步骤(ii)使用相同的用于沉积AlN层和AlO层的含铝前体。在其它实施方式中，步骤(i)和步骤(ii)使用不同的用于沉积AlN层和AlO层的含铝前体。
在一些实施方式中，所述前体是分子中含有一个或两个烷基和一个或两个烷氧基或烷胺基的一种或多种铝化合物，其中在其分子中连接到铝上的基团的总数为3，或包含3个烷基。或者，铝化合物可含有炔基和/或烷氧基或烷胺基。在一些实施方式中，所述铝化合物是不含卤素的。在一些实施方式中，所述前体是至少一种选自下组的铝化合物：Al(CxHy)2(OCzHa)、Al(CxHy)(OCzHa)2和Al(CxHy)2(NCzHa)，其中x、y、z和a是整数。在一些实施方式中，x是2或更大(例如2-5)，y是3或更大(例如3-11)，z是3或更大(例如3-6)，a是5或更大(例如5-13)。通常，铝化合物包括Al(CH3)3(TMA；三甲基铝)、Al(CH3)2(OC3H7)、Al(CH3)(OC3H7)2和Al(CH3)2(NC3H7)。
在一些实施方式中，用于沉积AlN单层的反应气体是氮气和/或氢气，其能生成氮和/或氢等离子体，并且没有等离子体时其不能与所述前体进行热反应。在一些实施方式中，用于沉积AlO单层的反应气体是氧气或含氧气体例如臭氧、氧化氮(N2O)等，其能生成氧等离子体，并且没有等离子体时其不能与所述前体进行热反应。
在一些实施方式中，使用载气和/或稀释气体，其是选自稀有气体，例如Ar、He、Kr和Xe的至少一种气体。
在一些实施方式中，在步骤(a)和/或(b)中，在每个包括以下步骤的过程循环中形成一个单层：以一个脉冲的方式将前体输送到反应空间中并对所述反应空间施加RF功率，其中所述反应气持续流动通过所述前体输送和RF功率施加。
图2说明了根据本发明的一个实施方式的PEALD过程顺序。在本文中，每列的宽度并不一定表示实际的时间长度，每行中线的上升水平线表示开启状态，其中每行中线的底部的水平线表示关闭状态。在该PEALD过程中，过程循环包括AlN沉积循环和AlO沉积循环。AlN沉积循环包括按照以下顺序的步骤：向反应区域中供给前体A、吹扫所述反应区域、向反应区域施加RF功率和吹扫反应区域，其中在整个沉积循环步骤中持续向反应区域中供应吹扫气体/载气，并且在整个沉积循环步骤中持续向反应区域供应用于沉积的反应气体C。在AlN沉积循环中，根据目标组成和AlN膜的质量，供给前体A、吹扫反应区域、向所述反应区域施加RF功率和吹扫反应区域的步骤可重复p次(p是5-100的整数，通常为8-50)，但是重复并不是必需的。
在AlN沉积循环之后继续进行AlO沉积循环。AlN沉积循环包括按照以下顺序的步骤：向反应区域中供给前体A、吹扫所述反应区域、向反应区域施加RF功率和吹扫反应区域，其中在整个沉积循环步骤中持续向反应区域中供应吹扫气体/载气，并且在整个沉积循环步骤中持续向反应区域供应用于沉积的反应气体D。在AlO沉积循环中，根据目标组成和AlO膜的质量，供给前体A、吹扫反应区域、向所述反应区域施加RF功率和吹扫反应区域的步骤可重复q次(q是3-50的整数，通常为5-20)，但是重复并不是必需的。
在本文中，词语“持续地”是指以下情况中至少一种：作为原位过程，不破坏真空、不暴露于空气、不打开室，在顺序中的步骤则不被打扰，并且根据实施方式不改变主要的过程条件。在一些实施方式中，辅助步骤，例如步骤之间的延缓或其它不重要的或非实质性的步骤在本文中并没有被计算入步骤，因此词语“持续地”并不排除中间的辅助步骤。
在上文中，AlN沉积循环可在AlO沉积循环之后进行，所述沉积可以AlO沉积循环开始，替代AlN沉积循环。在任何情况中。AlN沉积循环和AlO沉积循环是交替进行的，其中在每个相应循环中“p”和“q”可以是不同的。在一些实施方式中，控制“p”和“q”以及各个AlN膜和AlO膜的数量(数值)从而AlN膜的总厚度比AlO膜的总厚度大。此外，在AlN沉积循环和AlO沉积循环中前体A不需要相同，可以不同，但是优选使用相同的前体。同样，可通过作为单一混合物气体供应或分别供应的方式来使用两种或更多种前体。
在图2中说明的顺序中，使用持续供应的载气以一个脉冲的形式供应前体。这可使用流动-通过系统(FPS)完成，其中提供含有具有前体储器(瓶)的迂回管线的载气管线，所述主要管线和所述迂回管线是可以切换的，其中当只有载气要被输送到反应室时，关闭迂回管线，而当载气和前体气体都要被输送到反应室时，关闭主管线，载气流动通过迂回管线并且与前体气体一起从所述瓶流出。以该方式，载气可持续流动进入反应室中，并可通过切换主管线和迂回管线以脉冲的形式携带前体气体。图1B说明了根据本发明的一个实施方式的使用流动-通过系统(FPS)的前体供应系统(黑色阀说明该阀是关闭的)。如在图1B中的(a)所示，当向反应室(未显示)中输送前体时，首先，载气，例如Ar(或He)流动通过具有阀b和c的气体管线，随后进入瓶(储器)20。所述载气从瓶20中流出同时携带了与在瓶20内部蒸气压对应的量的前体气体，并且流动通过具有阀f和e的气体管线，随后与所述前体一起被输送到反应室中。在上述情况中，阀a和d是关闭的。当仅向反应室中输送载气(惰性气体)时，如图1B中的(b)所示，所述载气流动通过具有阀a的气体管线，同时绕过瓶20。在上述情况中，阀b、c、e和f是关闭的。
在一些实施方式中，AlN和AlO沉积循环可通过PEALD进行，其一个循环可在下述表1所示的条件下进行。
表1(数字是近似值的)
可在载气的协助下提供前体。由于ALD是自限制的吸附反应过程，反应性表面位点的数量决定了沉积的前体分子的数量，沉积的前体分子的数量独立于饱和后的前体暴露，并且前体的供应使得在每个循环中反应性表面位点都是饱和的。用于沉积的等离子体可原位形成，例如，在整个沉积循环中持续流动的氨气中形成。在其他实施方式中，所述等离子体可远程形成并被提供到反应室中。
如上所述，每个沉积循环的各个脉冲或相优选是自限制的。在各个相中供应过量的反应物以使得易受影响的结构表面饱和。表面饱和保证了反应物占据了所有可用的反应性位点(受制于例如物理尺寸或“位阻”限制)并从而保证优异的阶差覆盖。在一些实施方式中，可减少一种或多种反应物的脉冲时间从而不能获得完全饱和并且少于一层的单层被吸附到基材表面上。
处理循环可使用任何合适的设备进行，包括例如图1A中所示的设备。图1A是PEALD设备的示意图，理想的是与程序化的控制相连以进行下述工艺顺序，可用于本发明的一些实施方式中。在该图中，通过提供平行放置的一对导电平板电极4、2并且两者在反应室3的内部腔11(反应区域)中相对，对一侧施加HRF功率(13.56MHz或27MHz)20并将另一侧12电接地，而在电极之间激发等离子体。在较低平台2(较低的电极)提供温度调节器，将设置其上的基材1的温度保持恒定在给定的温度。较高电极4也用作喷淋板，分别通过气体管线21和气体管线22并通过喷淋板4将反应气体(和惰性气体)和前体气体引入到反应室3中。此外，在反应室3中，提供带有排气管线7的环状输送管13，反应室3内部腔11中的气体通过所示环状输送管13排放。此外，设置在反应室3下方的转移室5具有密封气体管线24以通过转移室5的内部腔16(转移区域)将密封气体引入到反应室3的内部11中，其中提供用于分隔反应区域和转移区域的分隔板14(该图中省略了闸门阀，通过该闸门阀将晶片转移进入或转移出转移室5)。所述转移室还具有排气管线6。在一些实施方式中，多元素膜的沉积和表面处理在同一室中进行，从而所有步骤可持续进行而不需要将基材暴露于空气或其它含氧气氛中。在一些实施方式中，远程等离子体单元可用于激发气体。
在一些实施方式中，在图1A中所示的设备中，图1B中显示的用于切换非活性气体流和前体气体流的系统(之前描述过)可用于以脉冲形式引入前体气体而不会造成反应室压力的显著波动。
在一些实施方式中，可使用双室反应器(相互之间紧密设置的用于处理晶片的两个部分或隔室)，其中反应气体和惰性气体可通过共用的管线供应，而前体气体通过非共用的管线供应。
本领域技术人员应理解，所述设备包括一个或多个程序化的控制器(未显示)或者所述控制器以其他方式设置成能进行本文其它部分所述的沉积和反应器清洁处理。本领域技术人员应理解，所述控制器与各种动力源、加热系统、泵、机器人和气体流控制器或反应器的阀连接。
参考以下工作实施例进一步解释本发明。不过，所述实施例并不是为了限制本发明。在实施例中，当没有说明条件和/或结构时，本领域技术人员可从本发明的角度出发，按常规试验容易地提供所述条件和/或结构。同样，在一些实施方式中，具体实施例中应用的数字可在至少±50％的范围内修改，并且所述数字是近似值。
实施例
通过PEALD在Si基材(Ф300mm)上形成氮化铝/氧化铝膜，如图2所示在下表2所示的条件下使用图1A所示的PEALD设备(包括图1B所示的改进方案)进行一个循环。在各个实施例(实施例a-k)中各AlN和AlO循环的数量如表3所示。在实施例中，将TMA(三甲基铝)用作前体。
表2(数字是近似值的)
表3
图5a至图5d说明了在实施例h(图5a)、i(图5b)、j(图5c)和k(图5d)中使用的层结构。在实施例h(图5a)中，在基材60上，以AlN膜和AlO膜的顺序沉积，AlN膜51的厚度为2.5nm，AlO膜52厚度为0.5nm。在实施例i(图5b)中，在基材60上，以AlN膜和AlO膜的顺序沉积，AlN膜53的厚度为2.5nm，AlO膜54厚度为1.0nm。在实施例j(图5c)中，在基材60上，以第一AlN膜、AlO膜和第二AlN膜的顺序沉积，第一AlN膜55的厚度为2.5nm，AlO膜56的厚度为0.5nm，第二AlN膜57的厚度为0.5nm。在实施例k(图5d)中，在基材60上，以第一AlN膜、AlO膜和第二AlN膜的顺序沉积，第一AlN膜58的厚度为1.5nm，AlO膜59的厚度为1.0nm，第二AlN膜50的厚度为0.5nm。
通过漏电流对得到的膜进行分析。结果在图3和4中显示。如图3所示，当AlN膜的厚度为20-40nm(实施例d，e)，漏电流没有显著增加。不过，当AlN膜的厚度薄至10nm(实施例c)时，漏电流开始增加。当AlN膜的厚度薄至3-5nm(实施例a、b)时，漏电流显著增加，特别是当厚度为3nm(实施例a)时。
图4显示了实施例f-k，其中将各膜的总厚度控制在3nm。如图4所示，当AlN膜单独使用时(实施例f)，与单独使用AlO膜时(实施例g)相比，显著增加了漏电流。虽然AlO膜具有良好的漏电流，但AlO膜不能在下方层(例如铜线图案)易于氧化的应用中使用。当层叠体由2.5nm的AlN膜和0.5nm的AlO膜构成时(实施例h)，略微改善漏电流；不过，当层叠体由2.0nm的第一AlN膜、0.5nm的AlO膜和第二AlN膜构成时(实施例i)，显著改善了漏电流，虽然AlO膜的厚度是相同的(0.5nm)，并且所述层叠体的总厚度相同(3nm)。这表明，与仅有一个界面(实施例h)相比，通过在AlN膜之间插入AlO膜，即通过提供两个界面(实施例i)，氧扩散和氮/氢扩散更多地通过界面进行，从而改善了漏电流。与AlO膜厚度为0.5nm而没有第二AlN膜的层叠体(实施例h)的漏电流相比，当AlO膜的厚度增加至1.0nm而没有第二AlN膜时(实施例j)，改善了漏电流。不过，因为实施例j的层叠体没有第二AlN膜，虽然AlO膜的厚度是实施例i的AlO膜的厚度的两倍，但其漏电流不如实施例i中具有第二AlN膜的漏电流好。当AlO膜的厚度为1.0nm并具有第二AlN膜时(实施例k)，最显著改善了漏电流。
本领域技术人员应理解，可进行大量和各种改进而不背离本发明的精神。因此，应清楚地理解，本发明的形式仅用于说明而不是为了限制本发明的范围。

Claims (12)

1.一种用于通过等离子体增强的原子层沉积(PEALD)在基材上形成氮化铝基膜的方法，所述方法包括：(a)形成至少一层氮化铝(AlN)单层；和(b)形成至少一层氧化铝(AlO)单层，所述方法包括：
(i)进行步骤(a)至少一次；
(ii)进行步骤(b)至少一次，其中步骤(a)和(b)以此顺序或相反的顺序连续交替进行而且在它们之间不形成任何其它中间层，从而形成由AlN层和AlO层交替沉积而构成的AlN基膜层叠体；并且
(iii)在层叠体的总厚度超过10nm前停止步骤(i)和(ii)，其中由AlN层构成的部分的厚度比由AlO层构成的部分的厚度大。
2.如权利要求1所述的方法，其中在步骤(iii)中，步骤(i)和(ii)在层叠体的总厚度超过5nm之前停止。
3.如权利要求1所述的方法，其中所述至少一层AlN单层具有0.3-3nm的厚度，所述至少一层AlO单层具有0.3-2nm的厚度。
4.如权利要求1所述的方法，其中至少一层AlN单层沉积在基材上并与基材接触。
5.如权利要求4所述的方法，其中步骤(i)进行两次，步骤(ii)进行一次，从而所述层叠体由两层AlN层和一层介于该两层AlN层之间的AlO层构成。
6.如权利要求4所述的方法，其中所述基材在其表面上具有铜线图案，并且所述AlN基膜沉积在铜线图案上作为扩散阻挡膜或蚀刻停止膜。
7.如权利要求1所述的方法，其中步骤(i)和步骤(ii)在同一反应室内进行。
8.如权利要求1所述的方法，其中步骤(i)和步骤(ii)使用相同的含铝前体来沉积AlN层和AlO层。
9.如权利要求1所述的方法，其中步骤(i)使用N2和H2作为反应气体。
10.如权利要求9所述的方法，其中在步骤(a)中，在每个包括以下步骤的过程循环中形成单层：以一个脉冲的形式将前体输送到反应空间中并对所述反应空间施加RF功率，其中所述反应气体持续流动通过所述前体输送和所述RF功率施加。
11.如权利要求1所述的方法，其中步骤(ii)使用O2和N2O作为反应气体。
12.如权利要求11所述的方法，其中在步骤(b)中，在每个包括以下步骤的过程循环中形成单层：以一个脉冲的形式将前体输送到反应空间中并对所述反应空间施加RF功率，其中所述反应气体持续流动通过所述前体输送和所述RF功率施加。
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109309044A (zh) * 2017-07-28 2019-02-05 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
CN110112313A (zh) * 2019-05-17 2019-08-09 华中科技大学 一种柔性器件的超薄复合封装薄膜结构及制备方法
CN111364017A (zh) * 2020-04-20 2020-07-03 国家纳米科学中心 一种氮化铝薄膜及其制备方法和用途

Families Citing this family (298)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10211097B2 (en) * 2015-12-30 2019-02-19 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
KR102592471B1 (ko) * 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
KR102354490B1 (ko) 2016-07-27 2022-01-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
KR20180070971A (ko) 2016-12-19 2018-06-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10312055B2 (en) * 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10236177B1 (en) 2017-08-22 2019-03-19 ASM IP Holding B.V.. Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
WO2019103613A1 (en) 2017-11-27 2019-05-31 Asm Ip Holding B.V. A storage device for storing wafer cassettes for use with a batch furnace
TWI791689B (zh) 2017-11-27 2023-02-11 荷蘭商Ａｓｍ智慧財產控股私人有限公司 包括潔淨迷你環境之裝置
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
US11482412B2 (en) 2018-01-19 2022-10-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
CN111699278B (zh) 2018-02-14 2023-05-16 Asm Ip私人控股有限公司 通过循环沉积工艺在衬底上沉积含钌膜的方法
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
KR20190128558A (ko) 2018-05-08 2019-11-18 에이에스엠 아이피 홀딩 비.브이. 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조
TW202349473A (zh) 2018-05-11 2023-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
KR20210027265A (ko) 2018-06-27 2021-03-10 에이에스엠 아이피 홀딩 비.브이. 금속 함유 재료를 형성하기 위한 주기적 증착 방법 및 금속 함유 재료를 포함하는 막 및 구조체
WO2020002995A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
KR20200002519A (ko) 2018-06-29 2020-01-08 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
KR20200030162A (ko) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
US10734219B2 (en) * 2018-09-26 2020-08-04 Asm Ip Holdings B.V. Plasma film forming method
CN110970344A (zh) 2018-10-01 2020-04-07 Asm Ip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP2020096183A (ja) 2018-12-14 2020-06-18 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
TW202405220A (zh) 2019-01-17 2024-02-01 荷蘭商Ａｓｍ Ｉｐ 私人控股有限公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
KR20200102357A (ko) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법
JP2020136677A (ja) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための周期的堆積方法および装置
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
KR102638425B1 (ko) 2019-02-20 2024-02-21 에이에스엠 아이피 홀딩 비.브이. 기판 표면 내에 형성된 오목부를 충진하기 위한 방법 및 장치
JP2020133004A (ja) 2019-02-22 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材を処理するための基材処理装置および方法
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
KR20200108248A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOCN 층을 포함한 구조체 및 이의 형성 방법
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
JP2020167398A (ja) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー ドアオープナーおよびドアオープナーが提供される基材処理装置
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141002A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP2021015791A (ja) 2019-07-09 2021-02-12 エーエスエム アイピー ホールディング ビー．ブイ． 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
JP2021019198A (ja) 2019-07-19 2021-02-15 エーエスエム・アイピー・ホールディング・ベー・フェー トポロジー制御されたアモルファスカーボンポリマー膜の形成方法
TW202113936A (zh) 2019-07-29 2021-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
KR20210018759A (ko) 2019-08-05 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 화학물질 공급원 용기를 위한 액체 레벨 센서
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
TW202129060A (zh) 2019-10-08 2021-08-01 荷蘭商Ａｓｍ Ｉｐ控股公司 基板處理裝置、及基板處理方法
TW202115273A (zh) 2019-10-10 2021-04-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成光阻底層之方法及包括光阻底層之結構
KR20210045930A (ko) 2019-10-16 2021-04-27 에이에스엠 아이피 홀딩 비.브이. 실리콘 산화물의 토폴로지-선택적 막의 형성 방법
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
KR20210065848A (ko) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP2021090042A (ja) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー．ブイ． 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
TW202125596A (zh) 2019-12-17 2021-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成氮化釩層之方法以及包括該氮化釩層之結構
KR20210080214A (ko) 2019-12-19 2021-06-30 에이에스엠 아이피 홀딩 비.브이. 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
TW202140135A (zh) 2020-01-06 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體供應總成以及閥板總成
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR20210095050A (ko) 2020-01-20 2021-07-30 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
KR20210100010A (ko) 2020-02-04 2021-08-13 에이에스엠 아이피 홀딩 비.브이. 대형 물품의 투과율 측정을 위한 방법 및 장치
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
TW202146715A (zh) 2020-02-17 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於生長磷摻雜矽層之方法及其系統
TW202203344A (zh) 2020-02-28 2022-01-16 荷蘭商Ａｓｍ Ｉｐ控股公司 專用於零件清潔的系統
KR20210116249A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
KR20210117157A (ko) 2020-03-12 2021-09-28 에이에스엠 아이피 홀딩 비.브이. 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
CN113555279A (zh) 2020-04-24 2021-10-26 Asm Ip私人控股有限公司 形成含氮化钒的层的方法及包含其的结构
TW202146831A (zh) 2020-04-24 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
TW202147383A (zh) 2020-05-19 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
KR20210145080A (ko) 2020-05-22 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 과산화수소를 사용하여 박막을 증착하기 위한 장치
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202219628A (zh) 2020-07-17 2022-05-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於光微影之結構與方法
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
TW202212623A (zh) 2020-08-26 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成金屬氧化矽層及金屬氮氧化矽層的方法、半導體結構、及系統
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
KR20220053482A (ko) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202235675A (zh) 2020-11-30 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 注入器、及基板處理設備
CN114639631A (zh) 2020-12-16 2022-06-17 Asm Ip私人控股有限公司 跳动和摆动测量固定装置
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Family Cites Families (1184)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3089507A (en) 1963-05-14 Air eject system control valve
US2161626A (en) 1937-09-25 1939-06-06 Walworth Patents Inc Locking device
US2745640A (en) 1953-09-24 1956-05-15 American Viscose Corp Heat exchanging apparatus
US3094396A (en) 1959-07-07 1963-06-18 Continental Can Co Method of and apparatus for curing internal coatings on can bodies
US2990045A (en) 1959-09-18 1961-06-27 Lipe Rollway Corp Thermally responsive transmission for automobile fan
US6482262B1 (en) 1959-10-10 2002-11-19 Asm Microchemistry Oy Deposition of transition metal carbides
US3232437A (en) 1963-03-13 1966-02-01 Champlon Lab Inc Spin-on filter cartridge
US4393013A (en) 1970-05-20 1983-07-12 J. C. Schumacher Company Vapor mass flow control system
US3833492A (en) 1971-09-22 1974-09-03 Pollution Control Ind Inc Method of producing ozone
US3862397A (en) 1972-03-24 1975-01-21 Applied Materials Tech Cool wall radiantly heated reactor
US3854443A (en) 1973-12-19 1974-12-17 Intel Corp Gas reactor for depositing thin films
US3887790A (en) 1974-10-07 1975-06-03 Vernon H Ferguson Wrap-around electric resistance heater
SE393967B (sv) 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
US4054071A (en) 1975-06-17 1977-10-18 Aetna-Standard Engineering Company Flying saw with movable work shifter
DE2610556C2 (de) 1976-03-12 1978-02-02 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum Verteilen strömender Medien über einen Strömungsquerschnitt
US4194536A (en) 1976-12-09 1980-03-25 Eaton Corporation Composite tubing product
US4181330A (en) 1977-03-22 1980-01-01 Noriatsu Kojima Horn shaped multi-inlet pipe fitting
US4176630A (en) 1977-06-01 1979-12-04 Dynair Limited Automatic control valves
US4145699A (en) 1977-12-07 1979-03-20 Bell Telephone Laboratories, Incorporated Superconducting junctions utilizing a binary semiconductor barrier
US4389973A (en) 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
US4322592A (en) 1980-08-22 1982-03-30 Rca Corporation Susceptor for heating semiconductor substrates
US4479831A (en) 1980-09-15 1984-10-30 Burroughs Corporation Method of making low resistance polysilicon gate transistors and low resistance interconnections therefor via gas deposited in-situ doped amorphous layer and heat-treatment
US4436674A (en) 1981-07-30 1984-03-13 J.C. Schumacher Co. Vapor mass flow control system
US4414492A (en) 1982-02-02 1983-11-08 Intent Patent A.G. Electronic ballast system
US4401507A (en) 1982-07-14 1983-08-30 Advanced Semiconductor Materials/Am. Method and apparatus for achieving spatially uniform externally excited non-thermal chemical reactions
US4512113A (en) 1982-09-23 1985-04-23 Budinger William D Workpiece holder for polishing operation
US4499354A (en) 1982-10-06 1985-02-12 General Instrument Corp. Susceptor for radiant absorption heater system
US4570328A (en) 1983-03-07 1986-02-18 Motorola, Inc. Method of producing titanium nitride MOS device gate electrode
JPS6050923A (ja) 1983-08-31 1985-03-22 Hitachi Ltd プラズマ表面処理方法
US4735259A (en) 1984-02-21 1988-04-05 Hewlett-Packard Company Heated transfer line for capillary tubing
USD288556S (en) 1984-02-21 1987-03-03 Pace, Incorporated Ornamental design for a frame of circuit elements utilized to replace damaged elements on printed circuit boards
JPH0752718B2 (ja) 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 薄膜形成方法
US4653541A (en) 1985-06-26 1987-03-31 Parker Hannifin Corporation Dual wall safety tube
US4789294A (en) 1985-08-30 1988-12-06 Canon Kabushiki Kaisha Wafer handling apparatus and method
KR940000915B1 (ko) 1986-01-31 1994-02-04 가부시기가이샤 히다찌세이사꾸쇼 표면 처리방법
US4654226A (en) 1986-03-03 1987-03-31 The University Of Delaware Apparatus and method for photochemical vapor deposition
US4722298A (en) 1986-05-19 1988-02-02 Machine Technology, Inc. Modular processing apparatus for processing semiconductor wafers
US4718637A (en) 1986-07-02 1988-01-12 Mdc Vacuum Products Corporation High vacuum gate valve having improved metal vacuum joint
US5183511A (en) 1986-07-23 1993-02-02 Semiconductor Energy Laboratory Co., Ltd. Photo CVD apparatus with a glow discharge system
US4681134A (en) 1986-07-23 1987-07-21 Paris Sr Raymond L Valve lock
US4882199A (en) 1986-08-15 1989-11-21 Massachusetts Institute Of Technology Method of forming a metal coating on a substrate
US4753192A (en) 1987-01-08 1988-06-28 Btu Engineering Corporation Movable core fast cool-down furnace
US4976996A (en) 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
US4821674A (en) 1987-03-31 1989-04-18 Deboer Wiebe B Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
US4827430A (en) 1987-05-11 1989-05-02 Baxter International Inc. Flow measurement system
US4780169A (en) 1987-05-11 1988-10-25 Tegal Corporation Non-uniform gas inlet for dry etching apparatus
US5221556A (en) 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
NO161941C (no) 1987-06-25 1991-04-30 Kvaerner Eng Fremgangsmaate ved og anlegg for transport av hydrokarboner over lang avstand fra en hydrokarbonkilde til havs.
US5062386A (en) 1987-07-27 1991-11-05 Epitaxy Systems, Inc. Induction heated pancake epitaxial reactor
USD327534S (en) 1987-07-30 1992-06-30 CLM Investments, Inc. Floor drain strainer
US4854263B1 (en) 1987-08-14 1997-06-17 Applied Materials Inc Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films
US4756794A (en) 1987-08-31 1988-07-12 The United States Of America As Represented By The Secretary Of The Navy Atomic layer etching
JPH0648217B2 (ja) 1987-12-24 1994-06-22 川惣電機工業株式会社 溶融金属の連続測温装置
US5028366A (en) 1988-01-12 1991-07-02 Air Products And Chemicals, Inc. Water based mold release compositions for making molded polyurethane foam
FR2628985B1 (fr) 1988-03-22 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a paroi protegee contre les depots
US4978567A (en) 1988-03-31 1990-12-18 Materials Technology Corporation, Subsidiary Of The Carbon/Graphite Group, Inc. Wafer holding fixture for chemical reaction processes in rapid thermal processing equipment and method for making same
JP2859632B2 (ja) 1988-04-14 1999-02-17 キヤノン株式会社 成膜装置及び成膜方法
US4857382A (en) 1988-04-26 1989-08-15 General Electric Company Apparatus and method for photoetching of polyimides, polycarbonates and polyetherimides
US5178682A (en) 1988-06-21 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method for forming a thin layer on a semiconductor substrate and apparatus therefor
US4986215A (en) 1988-09-01 1991-01-22 Kyushu Electronic Metal Co., Ltd. Susceptor for vapor-phase growth system
JP2918892B2 (ja) 1988-10-14 1999-07-12 株式会社日立製作所 プラズマエッチング処理方法
US4837185A (en) 1988-10-26 1989-06-06 Intel Corporation Pulsed dual radio frequency CVD process
US5119760A (en) 1988-12-27 1992-06-09 Symetrix Corporation Methods and apparatus for material deposition
JPH0834187B2 (ja) 1989-01-13 1996-03-29 東芝セラミックス株式会社 サセプタ
US5194401A (en) 1989-04-18 1993-03-16 Applied Materials, Inc. Thermally processing semiconductor wafers at non-ambient pressures
EP0395358B1 (en) 1989-04-25 2001-03-14 Matsushita Electronics Corporation Manufacturing method of a bipolar transistor
US5192717A (en) 1989-04-28 1993-03-09 Canon Kabushiki Kaisha Process for the formation of a polycrystalline semiconductor film by microwave plasma chemical vapor deposition method
US5360269A (en) 1989-05-10 1994-11-01 Tokyo Kogyo Kabushiki Kaisha Immersion-type temperature measuring apparatus using thermocouple
US4987856A (en) 1989-05-22 1991-01-29 Advanced Semiconductor Materials America, Inc. High throughput multi station processor for multiple single wafers
JP2890494B2 (ja) 1989-07-11 1999-05-17 セイコーエプソン株式会社 プラズマ薄膜の製造方法
US5060322A (en) 1989-07-27 1991-10-29 Delepine Jean C Shower room and ceiling element, especially for a shower room
US5013691A (en) 1989-07-31 1991-05-07 At&T Bell Laboratories Anisotropic deposition of silicon dioxide
JPH03277774A (ja) 1990-03-27 1991-12-09 Semiconductor Energy Lab Co Ltd 光気相反応装置
DE4011933C2 (de) 1990-04-12 1996-11-21 Balzers Hochvakuum Verfahren zur reaktiven Oberflächenbehandlung eines Werkstückes sowie Behandlungskammer hierfür
JPH04115531A (ja) 1990-09-05 1992-04-16 Mitsubishi Electric Corp 化学気相成長装置
US5167716A (en) 1990-09-28 1992-12-01 Gasonics, Inc. Method and apparatus for batch processing a semiconductor wafer
JP2780866B2 (ja) 1990-10-11 1998-07-30 大日本スクリーン製造 株式会社 光照射加熱基板の温度測定装置
TW214599B (zh) 1990-10-15 1993-10-11 Seiko Epson Corp
JP3323530B2 (ja) 1991-04-04 2002-09-09 株式会社日立製作所 半導体装置の製造方法
US5116018A (en) 1991-04-12 1992-05-26 Automax, Inc. Lockout modules
US5243195A (en) 1991-04-25 1993-09-07 Nikon Corporation Projection exposure apparatus having an off-axis alignment system and method of alignment therefor
US5104514A (en) 1991-05-16 1992-04-14 The United States Of America As Represented By The Secretary Of The Navy Protective coating system for aluminum
JP3040212B2 (ja) 1991-09-05 2000-05-15 株式会社東芝 気相成長装置
EP0533568A1 (en) 1991-09-17 1993-03-24 Sumitomo Electric Industries, Ltd. Superconducting thin film formed of oxide superconductor material, superconducting device utilizing the superconducting thin film and method for manufacturing thereof
JP3140111B2 (ja) 1991-11-19 2001-03-05 オリンパス光学工業株式会社 高倍率顕微鏡対物レンズ
US5199603A (en) 1991-11-26 1993-04-06 Prescott Norman F Delivery system for organometallic compounds
US5455069A (en) 1992-06-01 1995-10-03 Motorola, Inc. Method of improving layer uniformity in a CVD reactor
KR100293830B1 (ko) 1992-06-22 2001-09-17 리차드 에이치. 로브그렌 플라즈마 처리 쳄버내의 잔류물 제거를 위한 플라즈마 정결방법
US5534072A (en) 1992-06-24 1996-07-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing subtrates
JP3148004B2 (ja) 1992-07-06 2001-03-19 株式会社東芝 光ｃｖｄ装置及びこれを用いた半導体装置の製造方法
US5601641A (en) 1992-07-21 1997-02-11 Tse Industries, Inc. Mold release composition with polybutadiene and method of coating a mold core
JPH0653210A (ja) 1992-07-28 1994-02-25 Nec Corp 半導体装置
KR100304127B1 (ko) 1992-07-29 2001-11-30 이노마다 시게오 가반식 밀폐 컨테이너를 사용한 전자기판 처리시스템과 그의 장치
US5271967A (en) 1992-08-21 1993-12-21 General Motors Corporation Method and apparatus for application of thermal spray coatings to engine blocks
US5326427A (en) 1992-09-11 1994-07-05 Lsi Logic Corporation Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation
JP2680234B2 (ja) * 1992-11-12 1997-11-19 株式会社日立製作所 配線パターン形成方法
JPH06295862A (ja) 1992-11-20 1994-10-21 Mitsubishi Electric Corp 化合物半導体製造装置及び有機金属材料容器
IT1257434B (it) 1992-12-04 1996-01-17 Cselt Centro Studi Lab Telecom Generatore di vapori per impianti di deposizione chimica da fase vapore
KR100238629B1 (ko) 1992-12-17 2000-01-15 히가시 데쓰로 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치
US5421893A (en) 1993-02-26 1995-06-06 Applied Materials, Inc. Susceptor drive and wafer displacement mechanism
DE4311197A1 (de) 1993-04-05 1994-10-06 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Verfahren zum Betreiben einer inkohärent strahlenden Lichtquelle
US5404082A (en) 1993-04-23 1995-04-04 North American Philips Corporation High frequency inverter with power-line-controlled frequency modulation
US5354580A (en) 1993-06-08 1994-10-11 Cvd Incorporated Triangular deposition chamber for a vapor deposition system
JPH0799162A (ja) 1993-06-21 1995-04-11 Hitachi Ltd Ｃｖｄリアクタ装置
DE69415408T2 (de) 1993-06-28 1999-06-10 Canon Kk Wärmeerzeugender, TaNO.8 enthaltender Widerstand, Substrat mit diesem wärmeerzeugenden Widerstand für Flüssigkeitsstrahlkopf, Flüssigkeitsstrahlkopf mit diesem Substrat, und Gerät für einen Flüssigkeitsstrahl mit diesem Flüssigkeitsstrahlkopf
US5997768A (en) 1993-06-29 1999-12-07 Ciba Specialty Chemicals Corporation Pelletization of metal soap powders
JP3667781B2 (ja) 1993-07-16 2005-07-06 株式会社日立製作所 エンジンシステムの診断装置
US5415753A (en) 1993-07-22 1995-05-16 Materials Research Corporation Stationary aperture plate for reactive sputter deposition
US6122036A (en) 1993-10-21 2000-09-19 Nikon Corporation Projection exposure apparatus and method
JP2682403B2 (ja) 1993-10-29 1997-11-26 日本電気株式会社 半導体装置の製造方法
US5413813A (en) 1993-11-23 1995-05-09 Enichem S.P.A. CVD of silicon-based ceramic materials on internal surface of a reactor
US5616947A (en) 1994-02-01 1997-04-01 Matsushita Electric Industrial Co., Ltd. Semiconductor device having an MIS structure
US5681779A (en) 1994-02-04 1997-10-28 Lsi Logic Corporation Method of doping metal layers for electromigration resistance
US5589002A (en) 1994-03-24 1996-12-31 Applied Materials, Inc. Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing
JP3211548B2 (ja) 1994-03-30 2001-09-25 ウシオ電機株式会社 誘電体バリア放電蛍光ランプ
JPH07283149A (ja) 1994-04-04 1995-10-27 Nissin Electric Co Ltd 薄膜気相成長装置
US5531835A (en) 1994-05-18 1996-07-02 Applied Materials, Inc. Patterned susceptor to reduce electrostatic force in a CVD chamber
KR100306527B1 (ko) 1994-06-15 2002-06-26 구사마 사부로 박막반도체장치의제조방법,박막반도체장치
US5504042A (en) 1994-06-23 1996-04-02 Texas Instruments Incorporated Porous dielectric material with improved pore surface properties for electronics applications
JP2709568B2 (ja) 1994-06-30 1998-02-04 日本プレシジョン・サーキッツ株式会社 ダウンフロー型スピンドライヤ
US5838029A (en) 1994-08-22 1998-11-17 Rohm Co., Ltd. GaN-type light emitting device formed on a silicon substrate
US5730801A (en) 1994-08-23 1998-03-24 Applied Materials, Inc. Compartnetalized substrate processing chamber
JP3632256B2 (ja) 1994-09-30 2005-03-23 株式会社デンソー 窒化シリコン膜を有する半導体装置の製造方法
JP2845163B2 (ja) 1994-10-27 1999-01-13 日本電気株式会社 プラズマ処理方法及びその装置
FI97730C (fi) 1994-11-28 1997-02-10 Mikrokemia Oy Laitteisto ohutkalvojen valmistamiseksi
JPH08181135A (ja) 1994-12-22 1996-07-12 Sharp Corp 半導体装置の製造方法
JP3151118B2 (ja) 1995-03-01 2001-04-03 東京エレクトロン株式会社 熱処理装置
US5518549A (en) 1995-04-18 1996-05-21 Memc Electronic Materials, Inc. Susceptor and baffle therefor
JP3360098B2 (ja) 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
US5852879A (en) 1995-04-26 1998-12-29 Schumaier; Daniel R. Moisture sensitive item drying appliance
SE506163C2 (sv) 1995-04-27 1997-11-17 Ericsson Telefon Ab L M Anordning vid ett kiselsubstrat med ett urtag för upptagande av ett element jämte förfarande för framställande av en dylik anordning
US5683517A (en) 1995-06-07 1997-11-04 Applied Materials, Inc. Plasma reactor with programmable reactant gas distribution
US6190634B1 (en) 1995-06-07 2001-02-20 President And Fellows Of Harvard College Carbide nanomaterials
JPH08335558A (ja) 1995-06-08 1996-12-17 Nissin Electric Co Ltd 薄膜気相成長装置
JP3380091B2 (ja) 1995-06-09 2003-02-24 株式会社荏原製作所 反応ガス噴射ヘッド及び薄膜気相成長装置
US20020114886A1 (en) 1995-07-06 2002-08-22 Applied Materials, Inc. Method of tisin deposition using a chemical vapor deposition process
NO953217L (no) 1995-08-16 1997-02-17 Aker Eng As Metode og innretning ved rörbunter
US6113702A (en) 1995-09-01 2000-09-05 Asm America, Inc. Wafer support system
US5997588A (en) 1995-10-13 1999-12-07 Advanced Semiconductor Materials America, Inc. Semiconductor processing system with gas curtain
US5801104A (en) 1995-10-24 1998-09-01 Micron Technology, Inc. Uniform dielectric film deposition on textured surfaces
KR100201386B1 (ko) 1995-10-28 1999-06-15 구본준 화학기상증착장비의 반응가스 분사장치
US5736314A (en) 1995-11-16 1998-04-07 Microfab Technologies, Inc. Inline thermo-cycler
US5796074A (en) 1995-11-28 1998-08-18 Applied Materials, Inc. Wafer heater assembly
JPH09172055A (ja) 1995-12-19 1997-06-30 Fujitsu Ltd 静電チャック及びウエハの吸着方法
KR100267418B1 (ko) 1995-12-28 2000-10-16 엔도 마코토 플라스마처리방법및플라스마처리장치
US5679215A (en) 1996-01-02 1997-10-21 Lam Research Corporation Method of in situ cleaning a vacuum plasma processing chamber
US5632919A (en) 1996-01-25 1997-05-27 T.G.M., Inc. Temperature controlled insulation system
SE9600705D0 (sv) 1996-02-26 1996-02-26 Abb Research Ltd A susceptor for a device for epitaxially growing objects and such a device
US5837320A (en) 1996-02-27 1998-11-17 The University Of New Mexico Chemical vapor deposition of metal sulfide films from metal thiocarboxylate complexes with monodenate or multidentate ligands
US5732744A (en) 1996-03-08 1998-03-31 Control Systems, Inc. Method and apparatus for aligning and supporting semiconductor process gas delivery and regulation components
DE19609678C2 (de) 1996-03-12 2003-04-17 Infineon Technologies Ag Speicherzellenanordnung mit streifenförmigen, parallel verlaufenden Gräben und vertikalen MOS-Transistoren und Verfahren zu deren Herstellung
USD380527S (en) 1996-03-19 1997-07-01 Cherle Velez Sink drain shield
US5819434A (en) 1996-04-25 1998-10-13 Applied Materials, Inc. Etch enhancement using an improved gas distribution plate
US5920798A (en) 1996-05-28 1999-07-06 Matsushita Battery Industrial Co., Ltd. Method of preparing a semiconductor layer for an optical transforming device
US6342277B1 (en) 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
US5993916A (en) 1996-07-12 1999-11-30 Applied Materials, Inc. Method for substrate processing with improved throughput and yield
US5827757A (en) 1996-07-16 1998-10-27 Direct Radiography Corp. Fabrication of large area x-ray image capturing element
US5781693A (en) 1996-07-24 1998-07-14 Applied Materials, Inc. Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween
US5724748A (en) 1996-07-24 1998-03-10 Brooks; Ray G. Apparatus for packaging contaminant-sensitive articles and resulting package
KR0183912B1 (ko) 1996-08-08 1999-05-01 김광호 다중 반응 챔버에 연결된 펌핑 설비 및 이를 사용하는 방법
US5916365A (en) 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
JP3122618B2 (ja) 1996-08-23 2001-01-09 東京エレクトロン株式会社 プラズマ処理装置
US5928389A (en) 1996-10-21 1999-07-27 Applied Materials, Inc. Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool
US6347636B1 (en) 1996-11-13 2002-02-19 Applied Materials, Inc. Methods and apparatus for gettering fluorine from chamber material surfaces
US5855681A (en) 1996-11-18 1999-01-05 Applied Materials, Inc. Ultra high throughput wafer vacuum processing system
US5836483A (en) 1997-02-05 1998-11-17 Aerotech Dental Systems, Inc. Self-regulating fluid dispensing cap with safety pressure relief valve for dental/medical unit fluid bottles
US6367410B1 (en) 1996-12-16 2002-04-09 Applied Materials, Inc. Closed-loop dome thermal control apparatus for a semiconductor wafer processing system
US5953635A (en) 1996-12-19 1999-09-14 Intel Corporation Interlayer dielectric with a composite dielectric stack
US6035101A (en) 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
US6461982B2 (en) 1997-02-27 2002-10-08 Micron Technology, Inc. Methods for forming a dielectric film
JPH10261620A (ja) 1997-03-19 1998-09-29 Hitachi Ltd 表面処理装置
JP3752578B2 (ja) 1997-04-21 2006-03-08 株式会社フジキン 流体制御器用加熱装置
US6026762A (en) 1997-04-23 2000-02-22 Applied Materials, Inc. Apparatus for improved remote microwave plasma source for use with substrate processing systems
JP3230051B2 (ja) 1997-05-16 2001-11-19 東京エレクトロン株式会社 乾燥処理方法及びその装置
JPH1144799A (ja) 1997-05-27 1999-02-16 Ushio Inc 光路分割型紫外線照射装置
US6201999B1 (en) 1997-06-09 2001-03-13 Applied Materials, Inc. Method and apparatus for automatically generating schedules for wafer processing within a multichamber semiconductor wafer processing tool
US5968275A (en) 1997-06-25 1999-10-19 Lam Research Corporation Methods and apparatus for passivating a substrate in a plasma reactor
US6531193B2 (en) 1997-07-07 2003-03-11 The Penn State Research Foundation Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications
US6576064B2 (en) 1997-07-10 2003-06-10 Sandia Corporation Support apparatus for semiconductor wafer processing
US6024799A (en) 1997-07-11 2000-02-15 Applied Materials, Inc. Chemical vapor deposition manifold
US6312525B1 (en) 1997-07-11 2001-11-06 Applied Materials, Inc. Modular architecture for semiconductor wafer fabrication equipment
US6083321A (en) 1997-07-11 2000-07-04 Applied Materials, Inc. Fluid delivery system and method
US5975492A (en) 1997-07-14 1999-11-02 Brenes; Arthur Bellows driver slot valve
US6099596A (en) 1997-07-23 2000-08-08 Applied Materials, Inc. Wafer out-of-pocket detection tool
US6013553A (en) 1997-07-24 2000-01-11 Texas Instruments Incorporated Zirconium and/or hafnium oxynitride gate dielectric
US6287965B1 (en) 1997-07-28 2001-09-11 Samsung Electronics Co, Ltd. Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor
KR100385946B1 (ko) 1999-12-08 2003-06-02 삼성전자주식회사 원자층 증착법을 이용한 금속층 형성방법 및 그 금속층을장벽금속층, 커패시터의 상부전극, 또는 하부전극으로구비한 반도체 소자
US7393561B2 (en) 1997-08-11 2008-07-01 Applied Materials, Inc. Method and apparatus for layer by layer deposition of thin films
JP3317209B2 (ja) 1997-08-12 2002-08-26 東京エレクトロンエイ・ティー株式会社 プラズマ処理装置及びプラズマ処理方法
US6161500A (en) 1997-09-30 2000-12-19 Tokyo Electron Limited Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
US5908672A (en) 1997-10-15 1999-06-01 Applied Materials, Inc. Method and apparatus for depositing a planarized passivation layer
WO1999023276A1 (en) 1997-11-03 1999-05-14 Asm America, Inc. Long life high temperature process chamber
JP3050193B2 (ja) 1997-11-12 2000-06-12 日本電気株式会社 半導体装置及びその製造方法
EP1049640A4 (en) 1997-11-28 2008-03-12 Mattson Tech Inc SYSTEMS AND METHODS FOR HANDLING WORKPIECES FOR VACUUM PROCESSING AT HIGH FLOW RATE AND LOW CONTAMINATION
US6248168B1 (en) 1997-12-15 2001-06-19 Tokyo Electron Limited Spin coating apparatus including aging unit and solvent replacement unit
KR100249391B1 (ko) 1997-12-30 2000-03-15 김영환 가열장치
USD409894S (en) 1997-12-30 1999-05-18 Mcclurg Ben B Sheet rock plug
US6125789A (en) 1998-01-30 2000-10-03 Applied Materials, Inc. Increasing the sensitivity of an in-situ particle monitor
US6383955B1 (en) 1998-02-05 2002-05-07 Asm Japan K.K. Silicone polymer insulation film on semiconductor substrate and method for forming the film
TW437017B (en) 1998-02-05 2001-05-28 Asm Japan Kk Silicone polymer insulation film on semiconductor substrate and method for formation thereof
US6303523B2 (en) 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6413583B1 (en) 1998-02-11 2002-07-02 Applied Materials, Inc. Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound
US6050506A (en) 1998-02-13 2000-04-18 Applied Materials, Inc. Pattern of apertures in a showerhead for chemical vapor deposition
US6015465A (en) 1998-04-08 2000-01-18 Applied Materials, Inc. Temperature control system for semiconductor process chamber
US6218288B1 (en) 1998-05-11 2001-04-17 Micron Technology, Inc. Multiple step methods for forming conformal layers
KR100309918B1 (ko) 1998-05-16 2001-12-17 윤종용 광시야각액정표시장치및그제조방법
JP3208376B2 (ja) 1998-05-20 2001-09-10 株式会社半導体プロセス研究所 成膜方法及び半導体装置の製造方法
JPH11343571A (ja) 1998-05-29 1999-12-14 Ngk Insulators Ltd サセプター
JPH11354637A (ja) 1998-06-11 1999-12-24 Oki Electric Ind Co Ltd 配線の接続構造及び配線の接続部の形成方法
US6086677A (en) 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6302964B1 (en) 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6148761A (en) 1998-06-16 2000-11-21 Applied Materials, Inc. Dual channel gas distribution plate
JP2963443B1 (ja) 1998-06-19 1999-10-18 キヤノン販売株式会社 半導体装置の製造装置
KR20000002833A (ko) 1998-06-23 2000-01-15 윤종용 반도체 웨이퍼 보트
US6232248B1 (en) 1998-07-03 2001-05-15 Tokyo Electron Limited Single-substrate-heat-processing method for performing reformation and crystallization
JP2000040728A (ja) 1998-07-22 2000-02-08 Nippon Asm Kk ウェハ搬送機構
US20010001384A1 (en) 1998-07-29 2001-05-24 Takeshi Arai Silicon epitaxial wafer and production method therefor
US6190732B1 (en) 1998-09-03 2001-02-20 Cvc Products, Inc. Method and system for dispensing process gas for fabricating a device on a substrate
USD451893S1 (en) 1998-10-15 2001-12-11 Meto International Gmbh Arrangement of aluminum foil coils forming an inductor of a resonant frequency identification element
US6454860B2 (en) 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
JP2000150617A (ja) 1998-11-17 2000-05-30 Tokyo Electron Ltd 搬送装置
JP2000183346A (ja) 1998-12-15 2000-06-30 Toshiba Corp 半導体装置及びその製造方法
US6129954A (en) 1998-12-22 2000-10-10 General Electric Company Method for thermally spraying crack-free mullite coatings on ceramic-based substrates
US6137240A (en) 1998-12-31 2000-10-24 Lumion Corporation Universal ballast control circuit
KR100331544B1 (ko) 1999-01-18 2002-04-06 윤종용 반응챔버에 가스를 유입하는 방법 및 이에 사용되는 샤워헤드
TW455912B (en) 1999-01-22 2001-09-21 Sony Corp Method and apparatus for film deposition
US6044860A (en) 1999-02-01 2000-04-04 Spx Corporation Adjustable lockout device for knife gate valves
US6374831B1 (en) 1999-02-04 2002-04-23 Applied Materials, Inc. Accelerated plasma clean
DE10080457T1 (de) 1999-02-12 2001-04-26 Gelest Inc CVD-Abscheidung von Wolframnitrid
IT1308606B1 (it) 1999-02-12 2002-01-08 Lpe Spa Dispositivo per maneggiare substrati mediante un istema autolivellante a depressione in reattori epistassiali ad induzione con suscettore
US6250250B1 (en) 1999-03-18 2001-06-26 Yuri Maishev Multiple-cell source of uniform plasma
JP3398936B2 (ja) 1999-04-09 2003-04-21 日本エー・エス・エム株式会社 半導体処理装置
US6326597B1 (en) 1999-04-15 2001-12-04 Applied Materials, Inc. Temperature control system for process chamber
KR100347379B1 (ko) 1999-05-01 2002-08-07 주식회사 피케이엘 복수매 기판의 박막 증착 공정이 가능한 원자층 증착장치
JP3072989B1 (ja) 1999-05-14 2000-08-07 日本エー・エス・エム株式会社 半導体基板上に薄膜を形成する成膜装置における成膜方法
JP4294791B2 (ja) 1999-05-17 2009-07-15 アプライド マテリアルズ インコーポレイテッド 半導体製造装置
JP3668079B2 (ja) 1999-05-31 2005-07-06 忠弘 大見 プラズマプロセス装置
US6281098B1 (en) 1999-06-15 2001-08-28 Midwest Research Institute Process for Polycrystalline film silicon growth
US6821571B2 (en) 1999-06-18 2004-11-23 Applied Materials Inc. Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
FR2795745B1 (fr) 1999-06-30 2001-08-03 Saint Gobain Vitrage Procede de depot d'une couche a base de tungstene et/ou de molybdene sur un substrat verrier, ceramique ou vitroceramique, et substrat ainsi revetu
JP3252835B2 (ja) 1999-07-02 2002-02-04 松下電器産業株式会社 半導体装置およびその製造方法
JP2001023955A (ja) 1999-07-07 2001-01-26 Mitsubishi Electric Corp プラズマ処理装置
EP1077479A1 (en) 1999-08-17 2001-02-21 Applied Materials, Inc. Post-deposition treatment to enchance properties of Si-O-C low K film
US6579833B1 (en) 1999-09-01 2003-06-17 The Board Of Trustees Of The University Of Illinois Process for converting a metal carbide to carbon by etching in halogens
US6410459B2 (en) 1999-09-02 2002-06-25 Micron Technology, Inc. Wafer planarization using a uniform layer of material and method and apparatus for forming uniform layer of material used in semiconductor processing
JP2001077088A (ja) 1999-09-02 2001-03-23 Tokyo Electron Ltd プラズマ処理装置
US6511539B1 (en) 1999-09-08 2003-01-28 Asm America, Inc. Apparatus and method for growth of a thin film
US6355153B1 (en) 1999-09-17 2002-03-12 Nutool, Inc. Chip interconnect and packaging deposition methods and structures
US6420792B1 (en) 1999-09-24 2002-07-16 Texas Instruments Incorporated Semiconductor wafer edge marking
US6740853B1 (en) 1999-09-29 2004-05-25 Tokyo Electron Limited Multi-zone resistance heater
JP4209057B2 (ja) 1999-12-01 2009-01-14 東京エレクトロン株式会社 セラミックスヒーターならびにそれを用いた基板処理装置および基板処理方法
KR100369324B1 (ko) 1999-12-02 2003-01-24 한국전자통신연구원 평면형 마이크로 공동구조 제조 방법
FI118804B (fi) 1999-12-03 2008-03-31 Asm Int Menetelmä oksidikalvojen kasvattamiseksi
JP2001176952A (ja) 1999-12-21 2001-06-29 Toshiba Mach Co Ltd ウェーハ位置ずれ検出装置
JP3810604B2 (ja) 1999-12-21 2006-08-16 Ｓｍｃ株式会社 ゲートバルブ
US6576062B2 (en) 2000-01-06 2003-06-10 Tokyo Electron Limited Film forming apparatus and film forming method
KR100767762B1 (ko) 2000-01-18 2007-10-17 에이에스엠 저펜 가부시기가이샤 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치
US6541367B1 (en) 2000-01-18 2003-04-01 Applied Materials, Inc. Very low dielectric constant plasma-enhanced CVD films
US6475930B1 (en) 2000-01-31 2002-11-05 Motorola, Inc. UV cure process and tool for low k film formation
US6436819B1 (en) 2000-02-01 2002-08-20 Applied Materials, Inc. Nitrogen treatment of a metal nitride/metal stack
TW488010B (en) 2000-02-04 2002-05-21 Kobe Steel Ltd Chamber member made of aluminum alloy and heater block
US6372583B1 (en) 2000-02-09 2002-04-16 Intel Corporation Process for making semiconductor device with epitaxially grown source and drain
US6407435B1 (en) 2000-02-11 2002-06-18 Sharp Laboratories Of America, Inc. Multilayer dielectric stack and method
US6573030B1 (en) 2000-02-17 2003-06-03 Applied Materials, Inc. Method for depositing an amorphous carbon layer
TW476996B (en) 2000-02-28 2002-02-21 Mitsubishi Material Silicon Semiconductor manufacturing method and semiconductor manufacturing apparatus
DE60125338T2 (de) 2000-03-07 2007-07-05 Asm International N.V. Gradierte dünne schichten
US6558755B2 (en) 2000-03-20 2003-05-06 Dow Corning Corporation Plasma curing process for porous silica thin film
US6913796B2 (en) 2000-03-20 2005-07-05 Axcelis Technologies, Inc. Plasma curing process for porous low-k materials
US6576300B1 (en) 2000-03-20 2003-06-10 Dow Corning Corporation High modulus, low dielectric constant coatings
US6759098B2 (en) 2000-03-20 2004-07-06 Axcelis Technologies, Inc. Plasma curing of MSQ-based porous low-k film materials
US6598559B1 (en) 2000-03-24 2003-07-29 Applied Materials, Inc. Temperature controlled chamber
JP2001342570A (ja) 2000-03-30 2001-12-14 Hitachi Kokusai Electric Inc 半導体装置の製造方法および半導体製造装置
AU2001247685A1 (en) 2000-03-30 2001-10-15 Tokyo Electron Limited Method of and apparatus for tunable gas injection in a plasma processing system
JP2001345263A (ja) 2000-03-31 2001-12-14 Nikon Corp 露光装置及び露光方法、並びにデバイス製造方法
FI117979B (fi) 2000-04-14 2007-05-15 Asm Int Menetelmä oksidiohutkalvojen valmistamiseksi
US6329297B1 (en) 2000-04-21 2001-12-11 Applied Materials, Inc. Dilute remote plasma clean
US6635117B1 (en) 2000-04-26 2003-10-21 Axcelis Technologies, Inc. Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system
US6387207B1 (en) 2000-04-28 2002-05-14 Applied Materials, Inc. Integration of remote plasma generator with semiconductor processing chamber
KR100367662B1 (ko) 2000-05-02 2003-01-10 주식회사 셈테크놀러지 하이퍼서멀 중성입자 발생 장치 및 이를 채용하는 중성입자 처리 장치
DE10021871A1 (de) 2000-05-05 2001-11-15 Infineon Technologies Ag Verfahren zum Herstellen einer Barriereschicht in einem elektronischen Bauelement und Verfahren zum Herstellen eines elektronischen Bauelements mit einer Barriereschicht
JP3448737B2 (ja) 2000-05-25 2003-09-22 住友重機械工業株式会社 ウエハーチャック用冷却板及びウエハーチャック
KR100406173B1 (ko) 2000-06-13 2003-11-19 주식회사 하이닉스반도체 촉매 분사 수단을 구비한 히터 블록
US6863019B2 (en) 2000-06-13 2005-03-08 Applied Materials, Inc. Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas
US6461435B1 (en) 2000-06-22 2002-10-08 Applied Materials, Inc. Showerhead with reduced contact area
KR100467366B1 (ko) 2000-06-30 2005-01-24 주식회사 하이닉스반도체 원자층 증착법을 이용한 지르코늄산화막 형성방법
US6874480B1 (en) 2000-07-03 2005-04-05 Combustion Dynamics Corp. Flow meter
WO2002008487A1 (en) 2000-07-24 2002-01-31 The University Of Maryland, College Park Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
US7223676B2 (en) 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US7166524B2 (en) 2000-08-11 2007-01-23 Applied Materials, Inc. Method for ion implanting insulator material to reduce dielectric constant
US6784108B1 (en) 2000-08-31 2004-08-31 Micron Technology, Inc. Gas pulsing for etch profile control
USD449873S1 (en) 2000-09-22 2001-10-30 James Bronson Garbage disposal strainer and splash guard
US6494065B2 (en) 2000-09-26 2002-12-17 Babbitt Steam Specialty Company Valve lockout/tag out system
AU146327S (en) 2000-09-29 2001-12-18 American Standard Int Inc Faucet
US6370796B1 (en) 2000-09-29 2002-04-16 Sony Corporation Heater block cooling system for wafer processing apparatus
US6578893B2 (en) 2000-10-02 2003-06-17 Ajs Automation, Inc. Apparatus and methods for handling semiconductor wafers
US6660660B2 (en) 2000-10-10 2003-12-09 Asm International, Nv. Methods for making a dielectric stack in an integrated circuit
US7204887B2 (en) 2000-10-16 2007-04-17 Nippon Steel Corporation Wafer holding, wafer support member, wafer boat and heat treatment furnace
JP4156788B2 (ja) 2000-10-23 2008-09-24 日本碍子株式会社 半導体製造装置用サセプター
FI118014B (fi) 2000-10-23 2007-05-31 Asm Int Menetelmä alumiinioksidiohutkalvojen valmistamiseksi matalissa lämpötiloissa
US6688784B1 (en) 2000-10-25 2004-02-10 Advanced Micro Devices, Inc. Parallel plate development with multiple holes in top plate for control of developer flow and pressure
US6824665B2 (en) 2000-10-25 2004-11-30 Shipley Company, L.L.C. Seed layer deposition
US6445574B1 (en) 2000-10-30 2002-09-03 Motorola, Inc. Electronic device
JP2002158178A (ja) 2000-11-21 2002-05-31 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US6689220B1 (en) 2000-11-22 2004-02-10 Simplus Systems Corporation Plasma enhanced pulsed layer deposition
US6613695B2 (en) 2000-11-24 2003-09-02 Asm America, Inc. Surface preparation prior to deposition
US20020064592A1 (en) 2000-11-29 2002-05-30 Madhav Datta Electroless method of seed layer depostion, repair, and fabrication of Cu interconnects
EP1351283A4 (en) 2000-12-05 2006-01-25 Tokyo Electron Ltd METHOD AND DEVICE FOR TREATING AN ARTICLE TO BE TREATED
KR100385947B1 (ko) 2000-12-06 2003-06-02 삼성전자주식회사 원자층 증착 방법에 의한 박막 형성 방법
US6413321B1 (en) 2000-12-07 2002-07-02 Applied Materials, Inc. Method and apparatus for reducing particle contamination on wafer backside during CVD process
US20020076507A1 (en) 2000-12-15 2002-06-20 Chiang Tony P. Process sequence for atomic layer deposition
JP5068402B2 (ja) 2000-12-28 2012-11-07 公益財団法人国際科学振興財団 誘電体膜およびその形成方法、半導体装置、不揮発性半導体メモリ装置、および半導体装置の製造方法
US6398184B1 (en) 2000-12-29 2002-06-04 General Signal Corporation Lock device and lock method for knife gate valves
US7172497B2 (en) 2001-01-05 2007-02-06 Asm Nutool, Inc. Fabrication of semiconductor interconnect structures
US6583048B2 (en) 2001-01-17 2003-06-24 Air Products And Chemicals, Inc. Organosilicon precursors for interlayer dielectric films with low dielectric constants
US7087482B2 (en) 2001-01-19 2006-08-08 Samsung Electronics Co., Ltd. Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same
JP4644943B2 (ja) 2001-01-23 2011-03-09 東京エレクトロン株式会社 処理装置
JP3626933B2 (ja) 2001-02-08 2005-03-09 東京エレクトロン株式会社 基板載置台の製造方法
EP1421607A2 (en) 2001-02-12 2004-05-26 ASM America, Inc. Improved process for deposition of semiconductor films
US20020108670A1 (en) 2001-02-12 2002-08-15 Baker John Eric High purity chemical container with external level sensor and removable dip tube
US6613656B2 (en) 2001-02-13 2003-09-02 Micron Technology, Inc. Sequential pulse deposition
US6632478B2 (en) 2001-02-22 2003-10-14 Applied Materials, Inc. Process for forming a low dielectric constant carbon-containing film
JP4487135B2 (ja) 2001-03-05 2010-06-23 東京エレクトロン株式会社 流体制御装置
US6716571B2 (en) 2001-03-28 2004-04-06 Advanced Micro Devices, Inc. Selective photoresist hardening to facilitate lateral trimming
US6521295B1 (en) 2001-04-17 2003-02-18 Pilkington North America, Inc. Chemical vapor deposition of antimony-doped metal oxide and the coated article made thereby
US6482331B2 (en) 2001-04-18 2002-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for preventing contamination in a plasma process chamber
KR100798179B1 (ko) 2001-04-27 2008-01-24 교세라 가부시키가이샤 웨이퍼 가열장치
US20030019428A1 (en) 2001-04-28 2003-01-30 Applied Materials, Inc. Chemical vapor deposition chamber
US6847014B1 (en) 2001-04-30 2005-01-25 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
US6528430B2 (en) 2001-05-01 2003-03-04 Samsung Electronics Co., Ltd. Method of forming silicon containing thin films by atomic layer deposition utilizing Si2C16 and NH3
US6864041B2 (en) 2001-05-02 2005-03-08 International Business Machines Corporation Gate linewidth tailoring and critical dimension control for sub-100 nm devices using plasma etching
US6627268B1 (en) 2001-05-03 2003-09-30 Novellus Systems, Inc. Sequential ion, UV, and electron induced chemical vapor deposition
JP2002343790A (ja) 2001-05-21 2002-11-29 Nec Corp 金属化合物薄膜の気相堆積方法及び半導体装置の製造方法
US6528767B2 (en) 2001-05-22 2003-03-04 Applied Materials, Inc. Pre-heating and load lock pedestal material for high temperature CVD liquid crystal and flat panel display applications
US7037574B2 (en) 2001-05-23 2006-05-02 Veeco Instruments, Inc. Atomic layer deposition for fabricating thin films
US6472266B1 (en) 2001-06-18 2002-10-29 Taiwan Semiconductor Manufacturing Company Method to reduce bit line capacitance in cub drams
US6391803B1 (en) 2001-06-20 2002-05-21 Samsung Electronics Co., Ltd. Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6420279B1 (en) 2001-06-28 2002-07-16 Sharp Laboratories Of America, Inc. Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate
JP3708031B2 (ja) 2001-06-29 2005-10-19 株式会社日立製作所 プラズマ処理装置および処理方法
TW539822B (en) 2001-07-03 2003-07-01 Asm Inc Source chemical container assembly
JP4133810B2 (ja) 2001-07-10 2008-08-13 東京エレクトロン株式会社 ドライエッチング方法
KR100400044B1 (ko) 2001-07-16 2003-09-29 삼성전자주식회사 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드
US6677254B2 (en) 2001-07-23 2004-01-13 Applied Materials, Inc. Processes for making a barrier between a dielectric and a conductor and products produced therefrom
US6638839B2 (en) 2001-07-26 2003-10-28 The University Of Toledo Hot-filament chemical vapor deposition chamber and process with multiple gas inlets
WO2003012843A1 (fr) 2001-07-31 2003-02-13 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Procede et appareil de nettoyage et procede et appareil de gravure
US6531412B2 (en) 2001-08-10 2003-03-11 International Business Machines Corporation Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications
JP2003059999A (ja) 2001-08-14 2003-02-28 Tokyo Electron Ltd 処理システム
US6820570B2 (en) 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor
JP2003060076A (ja) 2001-08-21 2003-02-28 Nec Corp 半導体装置及びその製造方法
US6521547B1 (en) 2001-09-07 2003-02-18 United Microelectronics Corp. Method of repairing a low dielectric constant material layer
US6756318B2 (en) 2001-09-10 2004-06-29 Tegal Corporation Nanolayer thick film processing system and method
US6541370B1 (en) 2001-09-17 2003-04-01 Taiwan Semiconductor Manufacturing Co., Ltd. Composite microelectronic dielectric layer with inhibited crack susceptibility
US6607976B2 (en) 2001-09-25 2003-08-19 Applied Materials, Inc. Copper interconnect barrier layer structure and formation method
US20030059535A1 (en) 2001-09-25 2003-03-27 Lee Luo Cycling deposition of low temperature films in a cold wall single wafer process chamber
US6960537B2 (en) 2001-10-02 2005-11-01 Asm America, Inc. Incorporation of nitrogen into high k dielectric film
US6720259B2 (en) 2001-10-02 2004-04-13 Genus, Inc. Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition
KR100431658B1 (ko) 2001-10-05 2004-05-17 삼성전자주식회사 기판 가열 장치 및 이를 갖는 장치
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
WO2003035927A2 (en) 2001-10-26 2003-05-01 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
AU2002343583A1 (en) 2001-10-29 2003-05-12 Genus, Inc. Chemical vapor deposition system
KR100760291B1 (ko) 2001-11-08 2007-09-19 에이에스엠지니텍코리아 주식회사 박막 형성 방법
KR20030039247A (ko) 2001-11-12 2003-05-17 주성엔지니어링(주) 서셉터
GB2395493B (en) 2001-11-16 2005-03-09 Trikon Holdings Ltd Forming low K dielectric layers
US6926774B2 (en) 2001-11-21 2005-08-09 Applied Materials, Inc. Piezoelectric vaporizer
USD461233S1 (en) 2001-11-29 2002-08-06 James Michael Whalen Marine deck drain strainer
KR100446619B1 (ko) 2001-12-14 2004-09-04 삼성전자주식회사 유도 결합 플라즈마 장치
JP3891267B2 (ja) 2001-12-25 2007-03-14 キヤノンアネルバ株式会社 シリコン酸化膜作製方法
WO2003060978A1 (en) 2002-01-15 2003-07-24 Tokyo Electron Limited Cvd method and device for forming silicon-containing insulation film
EP1466034A1 (en) 2002-01-17 2004-10-13 Sundew Technologies, LLC Ald apparatus and method
US6760981B2 (en) 2002-01-18 2004-07-13 Speedline Technologies, Inc. Compact convection drying chamber for drying printed circuit boards and other electronic assemblies by enhanced evaporation
US20030141820A1 (en) 2002-01-30 2003-07-31 Applied Materials, Inc. Method and apparatus for substrate processing
US6899507B2 (en) 2002-02-08 2005-05-31 Asm Japan K.K. Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sections
US6734090B2 (en) 2002-02-20 2004-05-11 International Business Machines Corporation Method of making an edge seal for a semiconductor device
DE10207131B4 (de) 2002-02-20 2007-12-20 Infineon Technologies Ag Verfahren zur Bildung einer Hartmaske in einer Schicht auf einer flachen Scheibe
US20030170583A1 (en) 2002-03-01 2003-09-11 Hitachi Kokusai Electric Inc. Heat treatment apparatus and a method for fabricating substrates
KR100449028B1 (ko) 2002-03-05 2004-09-16 삼성전자주식회사 원자층 증착법을 이용한 박막 형성방법
EP1485513A2 (en) 2002-03-08 2004-12-15 Sundew Technologies, LLC Ald method and apparatus
JP2003264186A (ja) 2002-03-11 2003-09-19 Asm Japan Kk Ｃｖｄ装置処理室のクリーニング方法
US6825134B2 (en) 2002-03-26 2004-11-30 Applied Materials, Inc. Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow
JP4099092B2 (ja) 2002-03-26 2008-06-11 東京エレクトロン株式会社 基板処理装置および基板処理方法、高速ロータリバルブ
US6800134B2 (en) 2002-03-26 2004-10-05 Micron Technology, Inc. Chemical vapor deposition methods and atomic layer deposition methods
JP4128383B2 (ja) 2002-03-27 2008-07-30 東京エレクトロン株式会社 処理装置及び処理方法
EP1490529A1 (en) 2002-03-28 2004-12-29 President And Fellows Of Harvard College Vapor deposition of silicon dioxide nanolaminates
US6594550B1 (en) 2002-03-29 2003-07-15 Asm America, Inc. Method and system for using a buffer to track robotic movement
JP4106948B2 (ja) 2002-03-29 2008-06-25 東京エレクトロン株式会社 被処理体の跳上り検出装置、被処理体の跳上り検出方法、プラズマ処理装置及びプラズマ処理方法
US7988833B2 (en) 2002-04-12 2011-08-02 Schneider Electric USA, Inc. System and method for detecting non-cathode arcing in a plasma generation apparatus
US6710312B2 (en) 2002-04-12 2004-03-23 B H Thermal Corporation Heating jacket assembly with field replaceable thermostat
US6846515B2 (en) 2002-04-17 2005-01-25 Air Products And Chemicals, Inc. Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants
US8293001B2 (en) 2002-04-17 2012-10-23 Air Products And Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
US7045430B2 (en) 2002-05-02 2006-05-16 Micron Technology Inc. Atomic layer-deposited LaAlO3 films for gate dielectrics
US7589029B2 (en) 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
JP2003324072A (ja) 2002-05-07 2003-11-14 Nec Electronics Corp 半導体製造装置
US7122844B2 (en) 2002-05-13 2006-10-17 Cree, Inc. Susceptor for MOCVD reactor
US6682973B1 (en) 2002-05-16 2004-01-27 Advanced Micro Devices, Inc. Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications
KR100466818B1 (ko) 2002-05-17 2005-01-24 주식회사 하이닉스반도체 반도체 소자의 절연막 형성 방법
US7195693B2 (en) 2002-06-05 2007-03-27 Advanced Thermal Sciences Lateral temperature equalizing system for large area surfaces during processing
US20060014384A1 (en) 2002-06-05 2006-01-19 Jong-Cheol Lee Method of forming a layer and forming a capacitor of a semiconductor device having the same layer
US7135421B2 (en) 2002-06-05 2006-11-14 Micron Technology, Inc. Atomic layer-deposited hafnium aluminum oxide
US6849464B2 (en) * 2002-06-10 2005-02-01 Micron Technology, Inc. Method of fabricating a multilayer dielectric tunnel barrier structure
JP2004014952A (ja) 2002-06-10 2004-01-15 Tokyo Electron Ltd 処理装置および処理方法
US7067439B2 (en) 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US6858547B2 (en) 2002-06-14 2005-02-22 Applied Materials, Inc. System and method for forming a gate dielectric
US7601225B2 (en) 2002-06-17 2009-10-13 Asm International N.V. System for controlling the sublimation of reactants
US20040018750A1 (en) 2002-07-02 2004-01-29 Sophie Auguste J.L. Method for deposition of nitrogen doped silicon carbide films
US6821347B2 (en) 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
US6976822B2 (en) 2002-07-16 2005-12-20 Semitool, Inc. End-effectors and transfer devices for handling microelectronic workpieces
US7186385B2 (en) 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US7357138B2 (en) 2002-07-18 2008-04-15 Air Products And Chemicals, Inc. Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
JP2005534179A (ja) 2002-07-19 2005-11-10 アヴィザ テクノロジー インコーポレイテッド アミノシランとオゾンを用いる低温誘電体蒸着法
WO2004009861A2 (en) 2002-07-19 2004-01-29 Asm America, Inc. Method to form ultra high quality silicon-containing compound layers
TW200427858A (en) 2002-07-19 2004-12-16 Asml Us Inc Atomic layer deposition of high k dielectric films
JP2005534111A (ja) 2002-07-19 2005-11-10 マイクロリス・コーポレーション 液体流量制御器および精密分注装置およびシステム
KR100447284B1 (ko) 2002-07-19 2004-09-07 삼성전자주식회사 화학기상증착 챔버의 세정 방법
US6921062B2 (en) 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
US7223323B2 (en) 2002-07-24 2007-05-29 Applied Materials, Inc. Multi-chemistry plating system
KR100464855B1 (ko) 2002-07-26 2005-01-06 삼성전자주식회사 박막 형성 방법과, 이를 이용한 커패시터 형성 방법 및트랜지스터 형성 방법
JP4585852B2 (ja) 2002-07-30 2010-11-24 エーエスエム アメリカ インコーポレイテッド 基板処理システム、基板処理方法及び昇華装置
DE10235427A1 (de) 2002-08-02 2004-02-12 Eos Gmbh Electro Optical Systems Vorrichtung und Verfahren zum Herstellen von dreidimensionalen Objekten mittels eines generativen Fertigungsverfahrens
US7153542B2 (en) 2002-08-06 2006-12-26 Tegal Corporation Assembly line processing method
KR100480610B1 (ko) 2002-08-09 2005-03-31 삼성전자주식회사 실리콘 산화막을 이용한 미세 패턴 형성방법
JP4034145B2 (ja) 2002-08-09 2008-01-16 住友大阪セメント株式会社 サセプタ装置
TW200408323A (en) 2002-08-18 2004-05-16 Asml Us Inc Atomic layer deposition of high k metal oxides
TW200408015A (en) 2002-08-18 2004-05-16 Asml Us Inc Atomic layer deposition of high K metal silicates
US6649921B1 (en) 2002-08-19 2003-11-18 Fusion Uv Systems, Inc. Apparatus and method providing substantially two-dimensionally uniform irradiation
US20040036129A1 (en) 2002-08-22 2004-02-26 Micron Technology, Inc. Atomic layer deposition of CMOS gates with variable work functions
US6967154B2 (en) 2002-08-26 2005-11-22 Micron Technology, Inc. Enhanced atomic layer deposition
US6794284B2 (en) 2002-08-28 2004-09-21 Micron Technology, Inc. Systems and methods for forming refractory metal nitride layers using disilazanes
JP2004091848A (ja) 2002-08-30 2004-03-25 Tokyo Electron Ltd 薄膜形成装置の原料ガス供給系および薄膜形成装置
AU2003257112A1 (en) 2002-09-10 2004-04-30 Fsi International, Inc. Thermal process station with heated lid
US7011299B2 (en) 2002-09-16 2006-03-14 Matheson Tri-Gas, Inc. Liquid vapor delivery system and method of maintaining a constant level of fluid therein
KR100497748B1 (ko) 2002-09-17 2005-06-29 주식회사 무한 반도체소자 제조용 원자층 증착 장치 및 원자층 증착 방법
US7411352B2 (en) 2002-09-19 2008-08-12 Applied Process Technologies, Inc. Dual plasma beam sources and method
JP2004127957A (ja) 2002-09-30 2004-04-22 Fujitsu Ltd 半導体装置の製造方法と半導体装置
JP2004128019A (ja) 2002-09-30 2004-04-22 Applied Materials Inc プラズマ処理方法及び装置
JP2004134553A (ja) 2002-10-10 2004-04-30 Sony Corp レジストパターンの形成方法及び半導体装置の製造方法
US6905737B2 (en) 2002-10-11 2005-06-14 Applied Materials, Inc. Method of delivering activated species for rapid cyclical deposition
EP1408140A1 (en) 2002-10-11 2004-04-14 STMicroelectronics S.r.l. A high-density plasma process for depositing a layer of Silicon Nitride
KR100460841B1 (ko) 2002-10-22 2004-12-09 한국전자통신연구원 플라즈마 인가 원자층 증착법을 통한 질소첨가 산화물박막의 형성방법
KR100520902B1 (ko) 2002-11-20 2005-10-12 주식회사 아이피에스 알루미늄 화합물을 이용한 박막증착방법
KR100496265B1 (ko) 2002-11-29 2005-06-17 한국전자통신연구원 반도체 소자의 박막 형성방법
TW200410337A (en) 2002-12-02 2004-06-16 Au Optronics Corp Dry cleaning method for plasma reaction chamber
US7122414B2 (en) 2002-12-03 2006-10-17 Asm International, Inc. Method to fabricate dual metal CMOS devices
US6858524B2 (en) 2002-12-03 2005-02-22 Asm International, Nv Method of depositing barrier layer for metal gates
US6895158B2 (en) 2002-12-09 2005-05-17 Eastman Kodak Company Waveguide and method of smoothing optical surfaces
US7092287B2 (en) 2002-12-18 2006-08-15 Asm International N.V. Method of fabricating silicon nitride nanodots
US6990430B2 (en) 2002-12-20 2006-01-24 Brooks Automation, Inc. System and method for on-the-fly eccentricity recognition
USD486891S1 (en) 2003-01-21 2004-02-17 Richard W. Cronce, Jr. Vent pipe protective cover
USD497977S1 (en) 2003-01-22 2004-11-02 Tour & Andersson Ab Sealing ring membrane
US7122222B2 (en) 2003-01-23 2006-10-17 Air Products And Chemicals, Inc. Precursors for depositing silicon containing films and processes thereof
US20040144980A1 (en) 2003-01-27 2004-07-29 Ahn Kie Y. Atomic layer deposition of metal oxynitride layers as gate dielectrics and semiconductor device structures utilizing metal oxynitride layers
US7129165B2 (en) 2003-02-04 2006-10-31 Asm Nutool, Inc. Method and structure to improve reliability of copper interconnects
US7163721B2 (en) 2003-02-04 2007-01-16 Tegal Corporation Method to plasma deposit on organic polymer dielectric film
WO2004070816A1 (ja) 2003-02-06 2004-08-19 Tokyo Electron Limited プラズマ処理方法，半導体基板及びプラズマ処理装置
US6876017B2 (en) 2003-02-08 2005-04-05 Intel Corporation Polymer sacrificial light absorbing structure and method
TWI338323B (en) 2003-02-17 2011-03-01 Nikon Corp Stage device, exposure device and manufacguring method of devices
US7091453B2 (en) 2003-02-27 2006-08-15 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus by means of light irradiation
US6930059B2 (en) 2003-02-27 2005-08-16 Sharp Laboratories Of America, Inc. Method for depositing a nanolaminate film by atomic layer deposition
US20040168627A1 (en) 2003-02-27 2004-09-02 Sharp Laboratories Of America, Inc. Atomic layer deposition of oxide film
US7192892B2 (en) 2003-03-04 2007-03-20 Micron Technology, Inc. Atomic layer deposited dielectric layers
US7098149B2 (en) 2003-03-04 2006-08-29 Air Products And Chemicals, Inc. Mechanical enhancement of dense and porous organosilicate materials by UV exposure
JP2004273766A (ja) 2003-03-07 2004-09-30 Watanabe Shoko:Kk 気化装置及びそれを用いた成膜装置並びに気化方法及び成膜方法
JP4369203B2 (ja) 2003-03-24 2009-11-18 信越化学工業株式会社 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法
KR100877129B1 (ko) 2003-03-26 2009-01-07 신에쯔 한도타이 가부시키가이샤 열처리용 웨이퍼 지지구 및 열처리 장치
JP2004294638A (ja) 2003-03-26 2004-10-21 Tokyo Ohka Kogyo Co Ltd ネガ型レジスト材料およびレジストパターン形成方法
US7208389B1 (en) 2003-03-31 2007-04-24 Novellus Systems, Inc. Method of porogen removal from porous low-k films using UV radiation
US20040198069A1 (en) 2003-04-04 2004-10-07 Applied Materials, Inc. Method for hafnium nitride deposition
US7037376B2 (en) 2003-04-11 2006-05-02 Applied Materials Inc. Backflush chamber clean
US7077973B2 (en) 2003-04-18 2006-07-18 Applied Materials, Inc. Methods for substrate orientation
TW200506093A (en) 2003-04-21 2005-02-16 Aviza Tech Inc System and method for forming multi-component films
US7221553B2 (en) 2003-04-22 2007-05-22 Applied Materials, Inc. Substrate support having heat transfer system
US20040261712A1 (en) 2003-04-25 2004-12-30 Daisuke Hayashi Plasma processing apparatus
US7601223B2 (en) 2003-04-29 2009-10-13 Asm International N.V. Showerhead assembly and ALD methods
US7033113B2 (en) 2003-05-01 2006-04-25 Shell Oil Company Mid-line connector and method for pipe-in-pipe electrical heating
US6939817B2 (en) 2003-05-08 2005-09-06 Micron Technology, Inc. Removal of carbon from an insulative layer using ozone
WO2004102648A2 (en) 2003-05-09 2004-11-25 Asm America, Inc. Reactor surface passivation through chemical deactivation
US7265061B1 (en) 2003-05-09 2007-09-04 Novellus Systems, Inc. Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties
US8512798B2 (en) 2003-06-05 2013-08-20 Superpower, Inc. Plasma assisted metalorganic chemical vapor deposition (MOCVD) system
US7141500B2 (en) * 2003-06-05 2006-11-28 American Air Liquide, Inc. Methods for forming aluminum containing films utilizing amino aluminum precursors
US7589003B2 (en) 2003-06-13 2009-09-15 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
WO2005015609A2 (en) 2003-06-13 2005-02-17 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Sixsnyge1-x-y and related alloy heterostructures based on si, ge and sn
US7598513B2 (en) 2003-06-13 2009-10-06 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and Sn
US7192824B2 (en) 2003-06-24 2007-03-20 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectric layers
KR20050001793A (ko) 2003-06-26 2005-01-07 삼성전자주식회사 단원자층 증착 공정의 실시간 분석 방법
US7547363B2 (en) 2003-07-08 2009-06-16 Tosoh Finechem Corporation Solid organometallic compound-filled container and filling method thereof
US7055875B2 (en) 2003-07-11 2006-06-06 Asyst Technologies, Inc. Ultra low contact area end effector
US6909839B2 (en) 2003-07-23 2005-06-21 Advanced Technology Materials, Inc. Delivery systems for efficient vaporization of precursor source material
JP4298421B2 (ja) 2003-07-23 2009-07-22 エスペック株式会社 サーマルプレートおよび試験装置
US7122481B2 (en) 2003-07-25 2006-10-17 Intel Corporation Sealing porous dielectrics with silane coupling reagents
US7399388B2 (en) 2003-07-25 2008-07-15 Applied Materials, Inc. Sequential gas flow oxide deposition technique
US7202166B2 (en) 2003-08-04 2007-04-10 Asm America, Inc. Surface preparation prior to deposition on germanium
JP2005072405A (ja) 2003-08-27 2005-03-17 Sony Corp 薄膜の形成方法および半導体装置の製造方法
JP4536662B2 (ja) 2003-09-03 2010-09-01 東京エレクトロン株式会社 ガス処理装置および放熱方法
US7335277B2 (en) 2003-09-08 2008-02-26 Hitachi High-Technologies Corporation Vacuum processing apparatus
US7235482B2 (en) 2003-09-08 2007-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology
US7414281B1 (en) 2003-09-09 2008-08-19 Spansion Llc Flash memory with high-K dielectric material between substrate and gate
KR100551138B1 (ko) 2003-09-09 2006-02-10 어댑티브프라즈마테크놀로지 주식회사 균일한 플라즈마 발생을 위한 적응형 플라즈마 소스
US7132201B2 (en) 2003-09-12 2006-11-07 Micron Technology, Inc. Transparent amorphous carbon structure in semiconductor devices
KR100938534B1 (ko) 2003-09-19 2010-01-25 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법 및 기판 처리 장치
US6911399B2 (en) 2003-09-19 2005-06-28 Applied Materials, Inc. Method of controlling critical dimension microloading of photoresist trimming process by selective sidewall polymer deposition
JP4524554B2 (ja) 2003-09-25 2010-08-18 信越化学工業株式会社 γ，δ−不飽和カルボン酸及びそのシリルエステルの製造方法、カルボキシル基を有する有機ケイ素化合物及びその製造方法
US7156380B2 (en) 2003-09-29 2007-01-02 Asm International, N.V. Safe liquid source containers
US7205247B2 (en) 2003-09-30 2007-04-17 Aviza Technology, Inc. Atomic layer deposition of hafnium-based high-k dielectric
US20050069651A1 (en) 2003-09-30 2005-03-31 Tokyo Electron Limited Plasma processing system
US6875677B1 (en) 2003-09-30 2005-04-05 Sharp Laboratories Of America, Inc. Method to control the interfacial layer for deposition of high dielectric constant films
US6974781B2 (en) 2003-10-20 2005-12-13 Asm International N.V. Reactor precoating for reduced stress and uniform CVD
KR20060096445A (ko) 2003-10-29 2006-09-11 에이에스엠 아메리카, 인코포레이티드 박막 성장용 반응 시스템
US7329947B2 (en) 2003-11-07 2008-02-12 Sumitomo Mitsubishi Silicon Corporation Heat treatment jig for semiconductor substrate
US8313277B2 (en) 2003-11-10 2012-11-20 Brooks Automation, Inc. Semiconductor manufacturing process modules
US7071118B2 (en) 2003-11-12 2006-07-04 Veeco Instruments, Inc. Method and apparatus for fabricating a conformal thin film on a substrate
US20050153571A1 (en) 2003-11-17 2005-07-14 Yoshihide Senzaki Nitridation of high-k dielectric films
KR100550641B1 (ko) 2003-11-22 2006-02-09 주식회사 하이닉스반도체 산화하프늄과 산화알루미늄이 혼합된 유전막 및 그 제조방법
JP4725085B2 (ja) 2003-12-04 2011-07-13 株式会社豊田中央研究所 非晶質炭素、非晶質炭素被膜部材および非晶質炭素膜の成膜方法
US7431966B2 (en) 2003-12-09 2008-10-07 Micron Technology, Inc. Atomic layer deposition method of depositing an oxide on a substrate
US7143897B1 (en) 2003-12-09 2006-12-05 H20 International, Inc. Water filter
KR100549273B1 (ko) 2004-01-15 2006-02-03 주식회사 테라세미콘 반도체 제조장치의 기판홀더
JP4513329B2 (ja) 2004-01-16 2010-07-28 東京エレクトロン株式会社 処理装置
US7071051B1 (en) 2004-01-20 2006-07-04 Advanced Micro Devices, Inc. Method for forming a thin, high quality buffer layer in a field effect transistor and related structure
US7354847B2 (en) 2004-01-26 2008-04-08 Taiwan Semiconductor Manufacturing Company Method of trimming technology
CN100452306C (zh) 2004-01-30 2009-01-14 东京毅力科创株式会社 具有流体间隙的衬底保持器和制造衬底保持器的方法
DE102004005385A1 (de) 2004-02-03 2005-10-20 Infineon Technologies Ag Verwendung von gelösten Hafniumalkoxiden bzw. Zirkoniumalkoxiden als Precursoren für Hafniumoxid- und Hafniumoxynitridschichten bzw. Zirkoniumoxid- und Zirkoniumoxynitridschichten
US20050181535A1 (en) 2004-02-17 2005-08-18 Yun Sun J. Method of fabricating passivation layer for organic devices
US20050187647A1 (en) 2004-02-19 2005-08-25 Kuo-Hua Wang Intelligent full automation controlled flow for a semiconductor furnace tool
US7088003B2 (en) 2004-02-19 2006-08-08 International Business Machines Corporation Structures and methods for integration of ultralow-k dielectrics with improved reliability
US20050214458A1 (en) 2004-03-01 2005-09-29 Meiere Scott H Low zirconium hafnium halide compositions
US20060062910A1 (en) 2004-03-01 2006-03-23 Meiere Scott H Low zirconium, hafnium-containing compositions, processes for the preparation thereof and methods of use thereof
WO2005087974A2 (en) 2004-03-05 2005-09-22 Applied Materials, Inc. Cvd processes for the deposition of amorphous carbon films
US7079740B2 (en) 2004-03-12 2006-07-18 Applied Materials, Inc. Use of amorphous carbon film as a hardmask in the fabrication of optical waveguides
KR100538096B1 (ko) 2004-03-16 2005-12-21 삼성전자주식회사 원자층 증착 방법을 이용하는 커패시터 형성 방법
US7524735B1 (en) 2004-03-25 2009-04-28 Novellus Systems, Inc Flowable film dielectric gap fill process
US7582555B1 (en) 2005-12-29 2009-09-01 Novellus Systems, Inc. CVD flowable gap fill
US20050214457A1 (en) 2004-03-29 2005-09-29 Applied Materials, Inc. Deposition of low dielectric constant films by N2O addition
US20050221618A1 (en) 2004-03-31 2005-10-06 Amrhein Frederick J System for controlling a plenum output flow geometry
CN1292092C (zh) 2004-04-01 2006-12-27 南昌大学 用于金属有机化学气相沉积设备的双层进气喷头
US7585371B2 (en) 2004-04-08 2009-09-08 Micron Technology, Inc. Substrate susceptors for receiving semiconductor substrates to be deposited upon
US20050227502A1 (en) 2004-04-12 2005-10-13 Applied Materials, Inc. Method for forming an ultra low dielectric film by forming an organosilicon matrix and large porogens as a template for increased porosity
US7273526B2 (en) 2004-04-15 2007-09-25 Asm Japan K.K. Thin-film deposition apparatus
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US20060019502A1 (en) 2004-07-23 2006-01-26 Park Beom S Method of controlling the film properties of a CVD-deposited silicon nitride film
US7785672B2 (en) 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
USD553104S1 (en) 2004-04-21 2007-10-16 Tokyo Electron Limited Absorption board for an electric chuck used in semiconductor manufacture
WO2005104204A1 (ja) 2004-04-21 2005-11-03 Hitachi Kokusai Electric Inc. 熱処理装置
US7708859B2 (en) 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
US7049247B2 (en) 2004-05-03 2006-05-23 International Business Machines Corporation Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US20060019033A1 (en) 2004-05-21 2006-01-26 Applied Materials, Inc. Plasma treatment of hafnium-containing materials
US7271093B2 (en) 2004-05-24 2007-09-18 Asm Japan K.K. Low-carbon-doped silicon oxide film and damascene structure using same
JP2005340251A (ja) 2004-05-24 2005-12-08 Shin Etsu Chem Co Ltd プラズマ処理装置用のシャワープレート及びプラズマ処理装置
US20050266173A1 (en) 2004-05-26 2005-12-01 Tokyo Electron Limited Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition process
US7580388B2 (en) 2004-06-01 2009-08-25 Lg Electronics Inc. Method and apparatus for providing enhanced messages on common control channel in wireless communication system
US7651583B2 (en) 2004-06-04 2010-01-26 Tokyo Electron Limited Processing system and method for treating a substrate
US7396743B2 (en) 2004-06-10 2008-07-08 Singh Kaushal K Low temperature epitaxial growth of silicon-containing films using UV radiation
KR100589062B1 (ko) 2004-06-10 2006-06-12 삼성전자주식회사 원자층 적층 방식의 박막 형성방법 및 이를 이용한 반도체소자의 커패시터 형성방법
US7132360B2 (en) 2004-06-10 2006-11-07 Freescale Semiconductor, Inc. Method for treating a semiconductor surface to form a metal-containing layer
JP4534619B2 (ja) 2004-06-21 2010-09-01 株式会社Ｓｕｍｃｏ 半導体シリコン基板用熱処理治具
US7687997B2 (en) 2004-07-09 2010-03-30 Koninklijke Philips Electronics N.V. UVC/VUV dielectric barrier discharge lamp with reflector
US7422653B2 (en) 2004-07-13 2008-09-09 Applied Materials, Inc. Single-sided inflatable vertical slit valve
US7094442B2 (en) 2004-07-13 2006-08-22 Applied Materials, Inc. Methods for the reduction and elimination of particulate contamination with CVD of amorphous carbon
KR100578819B1 (ko) 2004-07-15 2006-05-11 삼성전자주식회사 원자층 적층 방법과 이를 이용한 게이트 구조물의 제조방법 및 커패시터의 제조 방법
US20060016783A1 (en) 2004-07-22 2006-01-26 Dingjun Wu Process for titanium nitride removal
US20060021703A1 (en) 2004-07-29 2006-02-02 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
JP2008508710A (ja) 2004-07-30 2008-03-21 エルピーイー ソシエタ ペル アチオニ 位置制御されるサセプタを備えるエピタキシャルリアクター
US7470633B2 (en) 2004-08-09 2008-12-30 Asm Japan K.K. Method of forming a carbon polymer film using plasma CVD
KR101071136B1 (ko) 2004-08-27 2011-10-10 엘지디스플레이 주식회사 평판표시장치의 제조를 위한 기판의 박막처리장치
ITMI20041677A1 (it) 2004-08-30 2004-11-30 E T C Epitaxial Technology Ct Processo di pulitura e processo operativo per un reattore cvd.
DE102004042431B4 (de) 2004-08-31 2008-07-03 Schott Ag Verfahren und Vorrichtung zur Plasmabeschichtung von Werkstücken mit spektraler Auswertung der Prozessparameter und Verwendung der Vorrichtung
US8158488B2 (en) 2004-08-31 2012-04-17 Micron Technology, Inc. Method of increasing deposition rate of silicon dioxide on a catalyst
US7910288B2 (en) 2004-09-01 2011-03-22 Micron Technology, Inc. Mask material conversion
US7253084B2 (en) 2004-09-03 2007-08-07 Asm America, Inc. Deposition from liquid sources
US20060137609A1 (en) 2004-09-13 2006-06-29 Puchacz Jerzy P Multi-single wafer processing apparatus
US20060060930A1 (en) 2004-09-17 2006-03-23 Metz Matthew V Atomic layer deposition of high dielectric constant gate dielectrics
DE102005045081B4 (de) 2004-09-29 2011-07-07 Covalent Materials Corp. Suszeptor
US7241475B2 (en) 2004-09-30 2007-07-10 The Aerospace Corporation Method for producing carbon surface films by plasma exposure of a carbide compound
US6874247B1 (en) 2004-10-12 2005-04-05 Tsang-Hung Hsu Toothbrush dryer
US20060257563A1 (en) 2004-10-13 2006-11-16 Seok-Joo Doh Method of fabricating silicon-doped metal oxide layer using atomic layer deposition technique
CN101061578A (zh) 2004-10-19 2007-10-24 佳能安内华股份有限公司 基板支撑·运送用托盘
US7790633B1 (en) 2004-10-26 2010-09-07 Novellus Systems, Inc. Sequential deposition/anneal film densification method
US7163900B2 (en) 2004-11-01 2007-01-16 Infineon Technologies Ag Using polydentate ligands for sealing pores in low-k dielectrics
JP2006135161A (ja) 2004-11-08 2006-05-25 Canon Inc 絶縁膜の形成方法及び装置
JP4435666B2 (ja) 2004-11-09 2010-03-24 東京エレクトロン株式会社 プラズマ処理方法、成膜方法
US7678682B2 (en) 2004-11-12 2010-03-16 Axcelis Technologies, Inc. Ultraviolet assisted pore sealing of porous low k dielectric films
KR100773755B1 (ko) 2004-11-18 2007-11-09 주식회사 아이피에스 플라즈마 ａｌｄ 박막증착방법
TWI654661B (zh) 2004-11-18 2019-03-21 日商尼康股份有限公司 位置測量方法、位置控制方法、測量方法、裝載方法、曝光方法及曝光裝置、及元件製造方法
AU2005309226B2 (en) 2004-11-24 2010-06-03 Oerlikon Solar Ag, Truebbach Vacuum processing chamber for very large area substrates
US20060113806A1 (en) 2004-11-29 2006-06-01 Asm Japan K.K. Wafer transfer mechanism
US20060113675A1 (en) 2004-12-01 2006-06-01 Chung-Liang Chang Barrier material and process for Cu interconnect
US7235501B2 (en) 2004-12-13 2007-06-26 Micron Technology, Inc. Lanthanum hafnium oxide dielectrics
US7290813B2 (en) 2004-12-16 2007-11-06 Asyst Technologies, Inc. Active edge grip rest pad
US7396732B2 (en) 2004-12-17 2008-07-08 Interuniversitair Microelektronica Centrum Vzw (Imec) Formation of deep trench airgaps and related applications
US7371022B2 (en) 2004-12-22 2008-05-13 Sokudo Co., Ltd. Developer endpoint detection in a track lithography system
JP4560681B2 (ja) 2004-12-24 2010-10-13 ミネベア株式会社 多灯式放電灯点灯装置
JP2006186271A (ja) 2004-12-28 2006-07-13 Sharp Corp 気相成長装置および成膜済基板の製造方法
US7846499B2 (en) 2004-12-30 2010-12-07 Asm International N.V. Method of pulsing vapor precursors in an ALD reactor
KR20070107017A (ko) 2004-12-30 2007-11-06 어플라이드 머티어리얼스, 인코포레이티드 트리밍과 호환되는 라인 에지 조도 감소 방법
US7560395B2 (en) 2005-01-05 2009-07-14 Micron Technology, Inc. Atomic layer deposited hafnium tantalum oxide dielectrics
US7598516B2 (en) 2005-01-07 2009-10-06 International Business Machines Corporation Self-aligned process for nanotube/nanowire FETs
WO2006078666A2 (en) 2005-01-18 2006-07-27 Asm America, Inc. Reaction system for growing a thin film
KR100640550B1 (ko) 2005-01-26 2006-10-31 주식회사 아이피에스 플라즈마 ａｌｄ 박막증착방법
US7135402B2 (en) 2005-02-01 2006-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Sealing pores of low-k dielectrics using CxHy
US7298009B2 (en) 2005-02-01 2007-11-20 Infineon Technologies Ag Semiconductor method and device with mixed orientation substrate
JP2008532271A (ja) 2005-02-22 2008-08-14 エーエスエム アメリカ インコーポレイテッド 原子層堆積のための表面のプラズマ前処理
JP4764028B2 (ja) 2005-02-28 2011-08-31 株式会社日立ハイテクノロジーズ プラズマ処理方法
US6972478B1 (en) 2005-03-07 2005-12-06 Advanced Micro Devices, Inc. Integrated circuit and method for its manufacture
US7629267B2 (en) 2005-03-07 2009-12-08 Asm International N.V. High stress nitride film and method for formation thereof
US7314835B2 (en) 2005-03-21 2008-01-01 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
US7422636B2 (en) 2005-03-25 2008-09-09 Tokyo Electron Limited Plasma enhanced atomic layer deposition system having reduced contamination
US20060226117A1 (en) 2005-03-29 2006-10-12 Bertram Ronald T Phase change based heating element system and method
US7479198B2 (en) 2005-04-07 2009-01-20 Timothy D'Annunzio Methods for forming nanofiber adhesive structures
US20060264066A1 (en) 2005-04-07 2006-11-23 Aviza Technology, Inc. Multilayer multicomponent high-k films and methods for depositing the same
KR100640640B1 (ko) 2005-04-19 2006-10-31 삼성전자주식회사 미세 피치의 하드마스크를 이용한 반도체 소자의 미세 패턴형성 방법
JP4694878B2 (ja) 2005-04-20 2011-06-08 Ｏｋｉセミコンダクタ株式会社 半導体製造装置および半導体装置の製造方法
US7160819B2 (en) 2005-04-25 2007-01-09 Sharp Laboratories Of America, Inc. Method to perform selective atomic layer deposition of zinc oxide
US8137465B1 (en) 2005-04-26 2012-03-20 Novellus Systems, Inc. Single-chamber sequential curing of semiconductor wafers
US20060251827A1 (en) 2005-05-09 2006-11-09 Applied Materials, Inc. Tandem uv chamber for curing dielectric materials
US7875556B2 (en) 2005-05-16 2011-01-25 Air Products And Chemicals, Inc. Precursors for CVD silicon carbo-nitride and silicon nitride films
US7109098B1 (en) 2005-05-17 2006-09-19 Applied Materials, Inc. Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7312162B2 (en) 2005-05-17 2007-12-25 Applied Materials, Inc. Low temperature plasma deposition process for carbon layer deposition
US20060260545A1 (en) 2005-05-17 2006-11-23 Kartik Ramaswamy Low temperature absorption layer deposition and high speed optical annealing system
US7422775B2 (en) 2005-05-17 2008-09-09 Applied Materials, Inc. Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US20070155138A1 (en) 2005-05-24 2007-07-05 Pierre Tomasini Apparatus and method for depositing silicon germanium films
US7732342B2 (en) 2005-05-26 2010-06-08 Applied Materials, Inc. Method to increase the compressive stress of PECVD silicon nitride films
WO2006129643A1 (ja) 2005-05-31 2006-12-07 Tokyo Electron Limited プラズマ処理装置およびプラズマ処理方法
US8435905B2 (en) 2005-06-13 2013-05-07 Hitachi Kokusai Electric Inc. Manufacturing method of semiconductor device, and substrate processing apparatus
US20060278524A1 (en) 2005-06-14 2006-12-14 Stowell Michael W System and method for modulating power signals to control sputtering
JP4853857B2 (ja) 2005-06-15 2012-01-11 東京エレクトロン株式会社 基板の処理方法，コンピュータ読み取り可能な記録媒体及び基板処理装置
JP4728708B2 (ja) * 2005-06-17 2011-07-20 日本電気株式会社 配線基板及びその製造方法
JP4753173B2 (ja) 2005-06-17 2011-08-24 株式会社フジキン 流体制御装置
JP2007005582A (ja) 2005-06-24 2007-01-11 Asm Japan Kk 基板搬送装置及びそれを搭載した半導体基板製造装置
US7575990B2 (en) 2005-07-01 2009-08-18 Macronix International Co., Ltd. Method of forming self-aligned contacts and local interconnects
US20070031598A1 (en) 2005-07-08 2007-02-08 Yoshikazu Okuyama Method for depositing silicon-containing films
US20070010072A1 (en) 2005-07-09 2007-01-11 Aviza Technology, Inc. Uniform batch film deposition process and films so produced
US8771806B2 (en) 2005-07-09 2014-07-08 Bang-Kwon Kang Surface coating method for hydrophobic and superhydrophobic treatment in atmospheric pressure plasma
US7762755B2 (en) 2005-07-11 2010-07-27 Brooks Automation, Inc. Equipment storage for substrate processing apparatus
TWI397969B (zh) 2005-07-11 2013-06-01 Brooks Automation Inc 具有迅速工件定中心功能的加工裝置
US7314838B2 (en) 2005-07-21 2008-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a high density dielectric film by chemical vapor deposition
JP2007035747A (ja) 2005-07-25 2007-02-08 Sumitomo Electric Ind Ltd ウェハ保持体およびそれを搭載したウェハプローバ
JP2007035899A (ja) 2005-07-27 2007-02-08 Sumitomo Electric Ind Ltd ウエハプローバ用ウエハ保持体及びそれを搭載したウエハプローバ
TWI313486B (en) 2005-07-28 2009-08-11 Nuflare Technology Inc Position measurement apparatus and method and writing apparatus and method
US20070028842A1 (en) 2005-08-02 2007-02-08 Makoto Inagawa Vacuum chamber bottom
US20090045829A1 (en) 2005-08-04 2009-02-19 Sumitomo Electric Industries, Ltd. Wafer holder for wafer prober and wafer prober equipped with same
US20070037412A1 (en) 2005-08-05 2007-02-15 Tokyo Electron Limited In-situ atomic layer deposition
US7323401B2 (en) 2005-08-08 2008-01-29 Applied Materials, Inc. Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
US7335611B2 (en) 2005-08-08 2008-02-26 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
US7429532B2 (en) 2005-08-08 2008-09-30 Applied Materials, Inc. Semiconductor substrate process using an optically writable carbon-containing mask
US7312148B2 (en) 2005-08-08 2007-12-25 Applied Materials, Inc. Copper barrier reflow process employing high speed optical annealing
US7718225B2 (en) 2005-08-17 2010-05-18 Applied Materials, Inc. Method to control semiconductor film deposition characteristics
USD557226S1 (en) 2005-08-25 2007-12-11 Hitachi High-Technologies Corporation Electrode cover for a plasma processing apparatus
US7402534B2 (en) 2005-08-26 2008-07-22 Applied Materials, Inc. Pretreatment processes within a batch ALD reactor
US7393736B2 (en) 2005-08-29 2008-07-01 Micron Technology, Inc. Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics
JP4815600B2 (ja) 2005-09-06 2011-11-16 株式会社テラセミコン 多結晶シリコン薄膜製造方法及びその製造装置
US20070065578A1 (en) 2005-09-21 2007-03-22 Applied Materials, Inc. Treatment processes for a batch ALD reactor
JP2007088113A (ja) 2005-09-21 2007-04-05 Sony Corp 半導体装置の製造方法
US7691204B2 (en) 2005-09-30 2010-04-06 Applied Materials, Inc. Film formation apparatus and methods including temperature and emissivity/pattern compensation
US7785658B2 (en) 2005-10-07 2010-08-31 Asm Japan K.K. Method for forming metal wiring structure
US7294581B2 (en) 2005-10-17 2007-11-13 Applied Materials, Inc. Method for fabricating silicon nitride spacer structures
US7691205B2 (en) 2005-10-18 2010-04-06 Asm Japan K.K. Substrate-supporting device
US7638951B2 (en) 2005-10-27 2009-12-29 Luxim Corporation Plasma lamp with stable feedback amplification and method therefor
US7906910B2 (en) 2005-10-27 2011-03-15 Luxim Corporation Plasma lamp with conductive material positioned relative to RF feed
US7994721B2 (en) 2005-10-27 2011-08-09 Luxim Corporation Plasma lamp and methods using a waveguide body and protruding bulb
DE102005051994B4 (de) 2005-10-31 2011-12-01 Globalfoundries Inc. Verformungsverfahrenstechnik in Transistoren auf Siliziumbasis unter Anwendung eingebetteter Halbleiterschichten mit Atomen mit einem großen kovalenten Radius
JP4940635B2 (ja) 2005-11-14 2012-05-30 東京エレクトロン株式会社 加熱装置、熱処理装置及び記憶媒体
KR100660890B1 (ko) 2005-11-16 2006-12-26 삼성전자주식회사 Ａｌｄ를 이용한 이산화실리콘막 형성 방법
GB2432363B (en) 2005-11-16 2010-06-23 Epichem Ltd Hafnocene and zirconocene precursors, and use thereof in atomic layer deposition
US20070116873A1 (en) 2005-11-18 2007-05-24 Tokyo Electron Limited Apparatus for thermal and plasma enhanced vapor deposition and method of operating
US7629277B2 (en) 2005-11-23 2009-12-08 Honeywell International Inc. Frag shield
US20070125762A1 (en) 2005-12-01 2007-06-07 Applied Materials, Inc. Multi-zone resistive heater
JP4666496B2 (ja) 2005-12-07 2011-04-06 大日本スクリーン製造株式会社 基板熱処理装置
US7592251B2 (en) 2005-12-08 2009-09-22 Micron Technology, Inc. Hafnium tantalum titanium oxide films
US7381644B1 (en) 2005-12-23 2008-06-03 Novellus Systems, Inc. Pulsed PECVD method for modulating hydrogen content in hard mask
JP4629574B2 (ja) 2005-12-27 2011-02-09 日本発條株式会社 基板支持装置と、その製造方法
KR101296911B1 (ko) 2005-12-28 2013-08-14 엘지디스플레이 주식회사 평판표시소자의 제조장치 및 그의 정전기량 검출장치 및검출방법
TWI284390B (en) 2006-01-10 2007-07-21 Ind Tech Res Inst Manufacturing method of charge store device
US8088248B2 (en) 2006-01-11 2012-01-03 Lam Research Corporation Gas switching section including valves having different flow coefficients for gas distribution system
JP2007191792A (ja) 2006-01-19 2007-08-02 Atto Co Ltd ガス分離型シャワーヘッド
US20070173071A1 (en) 2006-01-20 2007-07-26 International Business Machines Corporation SiCOH dielectric
US20080254220A1 (en) 2006-01-20 2008-10-16 Tokyo Electron Limited Plasma processing apparatus
US8673413B2 (en) 2006-01-27 2014-03-18 Tosoh Finechem Corporation Method for packing solid organometallic compound and packed container
JP4854317B2 (ja) 2006-01-31 2012-01-18 東京エレクトロン株式会社 基板処理方法
US8057603B2 (en) 2006-02-13 2011-11-15 Tokyo Electron Limited Method of cleaning substrate processing chamber, storage medium, and substrate processing chamber
US20070207275A1 (en) 2006-02-21 2007-09-06 Applied Materials, Inc. Enhancement of remote plasma source clean for dielectric films
US7740705B2 (en) 2006-03-08 2010-06-22 Tokyo Electron Limited Exhaust apparatus configured to reduce particle contamination in a deposition system
US7794546B2 (en) 2006-03-08 2010-09-14 Tokyo Electron Limited Sealing device and method for a processing system
US7460003B2 (en) 2006-03-09 2008-12-02 International Business Machines Corporation Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer
US7494882B2 (en) 2006-03-10 2009-02-24 Texas Instruments Incorporated Manufacturing a semiconductive device using a controlled atomic layer removal process
KR20070093493A (ko) 2006-03-14 2007-09-19 엘지이노텍 주식회사 서셉터 및 반도체 제조장치
US8268078B2 (en) 2006-03-16 2012-09-18 Tokyo Electron Limited Method and apparatus for reducing particle contamination in a deposition system
US20070218200A1 (en) 2006-03-16 2007-09-20 Kenji Suzuki Method and apparatus for reducing particle formation in a vapor distribution system
US7566891B2 (en) 2006-03-17 2009-07-28 Applied Materials, Inc. Apparatus and method for treating a substrate with UV radiation using primary and secondary reflectors
US7410915B2 (en) 2006-03-23 2008-08-12 Asm Japan K.K. Method of forming carbon polymer film using plasma CVD
JP2007266464A (ja) 2006-03-29 2007-10-11 Hitachi Ltd 半導体集積回路装置の製造方法
US20070234955A1 (en) 2006-03-29 2007-10-11 Tokyo Electron Limited Method and apparatus for reducing carbon monoxide poisoning at the peripheral edge of a substrate in a thin film deposition system
US8951478B2 (en) 2006-03-30 2015-02-10 Applied Materials, Inc. Ampoule with a thermally conductive coating
US20070287301A1 (en) 2006-03-31 2007-12-13 Huiwen Xu Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics
US8097300B2 (en) * 2006-03-31 2012-01-17 Tokyo Electron Limited Method of forming mixed rare earth oxynitride and aluminum oxynitride films by atomic layer deposition
US20070237697A1 (en) 2006-03-31 2007-10-11 Tokyo Electron Limited Method of forming mixed rare earth oxide and aluminate films by atomic layer deposition
US7780865B2 (en) 2006-03-31 2010-08-24 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
US7396491B2 (en) 2006-04-06 2008-07-08 Osram Sylvania Inc. UV-emitting phosphor and lamp containing same
US7902074B2 (en) 2006-04-07 2011-03-08 Micron Technology, Inc. Simplified pitch doubling process flow
US20070248767A1 (en) 2006-04-19 2007-10-25 Asm Japan K.K. Method of self-cleaning of carbon-based film
US7410852B2 (en) 2006-04-21 2008-08-12 International Business Machines Corporation Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors
FR2900276B1 (fr) 2006-04-25 2008-09-12 St Microelectronics Sa Depot peald d'un materiau a base de silicium
US7537804B2 (en) 2006-04-28 2009-05-26 Micron Technology, Inc. ALD methods in which two or more different precursors are utilized with one or more reactants to form materials over substrates
US8231799B2 (en) 2006-04-28 2012-07-31 Applied Materials, Inc. Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone
US7875312B2 (en) 2006-05-23 2011-01-25 Air Products And Chemicals, Inc. Process for producing silicon oxide films for organoaminosilane precursors
US7825038B2 (en) 2006-05-30 2010-11-02 Applied Materials, Inc. Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
US7790634B2 (en) 2006-05-30 2010-09-07 Applied Materials, Inc Method for depositing and curing low-k films for gapfill and conformal film applications
US20070277735A1 (en) 2006-06-02 2007-12-06 Nima Mokhlesi Systems for Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
EP2029790A1 (en) 2006-06-02 2009-03-04 L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing
US8278176B2 (en) 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
US7554103B2 (en) 2006-06-26 2009-06-30 Applied Materials, Inc. Increased tool utilization/reduction in MWBC for UV curing chamber
US20080153311A1 (en) 2006-06-28 2008-06-26 Deenesh Padhi Method for depositing an amorphous carbon film with improved density and step coverage
US7867578B2 (en) 2006-06-28 2011-01-11 Applied Materials, Inc. Method for depositing an amorphous carbon film with improved density and step coverage
US7416989B1 (en) 2006-06-30 2008-08-26 Novellus Systems, Inc. Adsorption based material removal process
WO2008004278A1 (fr) 2006-07-04 2008-01-10 Toshiba Mitsubishi-Electric Industrial Systems Corporation Procédé et dispositif de concentration / dilution de gaz spécifique
JP4193883B2 (ja) 2006-07-05 2008-12-10 住友電気工業株式会社 有機金属気相成長装置
KR100799735B1 (ko) 2006-07-10 2008-02-01 삼성전자주식회사 금속 산화물 형성 방법 및 이를 수행하기 위한 장치
KR100791334B1 (ko) 2006-07-26 2008-01-07 삼성전자주식회사 원자층 증착법을 이용한 금속 산화막 형성 방법
FR2904328B1 (fr) 2006-07-27 2008-10-24 St Microelectronics Sa Depot par adsorption sous un champ electrique
US7749879B2 (en) 2006-08-03 2010-07-06 Micron Technology, Inc. ALD of silicon films on germanium
GB0615722D0 (en) 2006-08-08 2006-09-20 Boc Group Plc Apparatus for conveying a waste stream
US8080282B2 (en) 2006-08-08 2011-12-20 Asm Japan K.K. Method for forming silicon carbide film containing oxygen
US7514375B1 (en) 2006-08-08 2009-04-07 Novellus Systems, Inc. Pulsed bias having high pulse frequency for filling gaps with dielectric material
TW200814131A (en) 2006-08-11 2008-03-16 Schott Ag External electrode fluorescent lamp with optimized operating efficiency
US20110027999A1 (en) 2006-08-16 2011-02-03 Freescale Semiconductor, Inc. Etch method in the manufacture of an integrated circuit
US7611980B2 (en) 2006-08-30 2009-11-03 Micron Technology, Inc. Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures
US7690881B2 (en) 2006-08-30 2010-04-06 Asm Japan K.K. Substrate-processing apparatus with buffer mechanism and substrate-transferring apparatus
KR100753020B1 (ko) 2006-08-30 2007-08-30 한국화학연구원 원자층 증착법을 이용한 비휘발성 부유 게이트 메모리소자를 위한 나노적층체의 제조방법
US7605030B2 (en) 2006-08-31 2009-10-20 Micron Technology, Inc. Hafnium tantalum oxynitride high-k dielectric and metal gates
US20080057659A1 (en) 2006-08-31 2008-03-06 Micron Technology, Inc. Hafnium aluminium oxynitride high-K dielectric and metal gates
JP4943780B2 (ja) 2006-08-31 2012-05-30 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US7544604B2 (en) 2006-08-31 2009-06-09 Micron Technology, Inc. Tantalum lanthanide oxynitride films
US20080241805A1 (en) 2006-08-31 2008-10-02 Q-Track Corporation System and method for simulated dosimetry using a real time locating system
JP4762835B2 (ja) 2006-09-07 2011-08-31 東京エレクトロン株式会社 基板処理方法、基板処理装置、プログラムおよびプログラム記録媒体
USD613829S1 (en) 2006-09-13 2010-04-13 Hayward Industries, Inc. Circular suction outlet assembly cover
US7789965B2 (en) 2006-09-19 2010-09-07 Asm Japan K.K. Method of cleaning UV irradiation chamber
US7976898B2 (en) 2006-09-20 2011-07-12 Asm Genitech Korea Ltd. Atomic layer deposition apparatus
US7718553B2 (en) 2006-09-21 2010-05-18 Asm Japan K.K. Method for forming insulation film having high density
JP2008074963A (ja) 2006-09-21 2008-04-03 Fujifilm Corp 組成物、膜、およびその製造方法
US7723648B2 (en) 2006-09-25 2010-05-25 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
US8137048B2 (en) 2006-09-27 2012-03-20 Vserv Technologies Wafer processing system with dual wafer robots capable of asynchronous motion
TWI462179B (zh) 2006-09-28 2014-11-21 Tokyo Electron Ltd 用以形成氧化矽膜之成膜方法與裝置
US7476291B2 (en) 2006-09-28 2009-01-13 Lam Research Corporation High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation
DE102006046374B4 (de) 2006-09-29 2010-11-11 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Reduzieren der Lackvergiftung während des Strukturierens von Siliziumnitridschichten in einem Halbleiterbauelement
US7767262B2 (en) 2006-09-29 2010-08-03 Tokyo Electron Limited Nitrogen profile engineering in nitrided high dielectric constant films
USD593969S1 (en) 2006-10-10 2009-06-09 Tokyo Electron Limited Processing chamber for manufacturing semiconductors
US8986456B2 (en) 2006-10-10 2015-03-24 Asm America, Inc. Precursor delivery system
US8137462B2 (en) 2006-10-10 2012-03-20 Asm America, Inc. Precursor delivery system
CN100451163C (zh) 2006-10-18 2009-01-14 中微半导体设备(上海)有限公司 用于半导体工艺件处理反应器的气体分布装置及其反应器
JP2008108991A (ja) 2006-10-27 2008-05-08 Daihen Corp ワーク保持機構
US7851232B2 (en) 2006-10-30 2010-12-14 Novellus Systems, Inc. UV treatment for carbon-containing low-k dielectric repair in semiconductor processing
US7727864B2 (en) 2006-11-01 2010-06-01 Asm America, Inc. Controlled composition using plasma-enhanced atomic layer deposition
US7611751B2 (en) 2006-11-01 2009-11-03 Asm America, Inc. Vapor deposition of metal carbide films
US7888273B1 (en) 2006-11-01 2011-02-15 Novellus Systems, Inc. Density gradient-free gap fill
US7955516B2 (en) 2006-11-02 2011-06-07 Applied Materials, Inc. Etching of nano-imprint templates using an etch reactor
JP2008117903A (ja) 2006-11-02 2008-05-22 Toshiba Corp 半導体装置の製造方法
US20100001409A1 (en) 2006-11-09 2010-01-07 Nxp, B.V. Semiconductor device and method of manufacturing thereof
US7776395B2 (en) 2006-11-14 2010-08-17 Applied Materials, Inc. Method of depositing catalyst assisted silicates of high-k materials
US7749574B2 (en) 2006-11-14 2010-07-06 Applied Materials, Inc. Low temperature ALD SiO2
US7671134B2 (en) 2006-11-15 2010-03-02 Brady Worldwide, Inc. Compositions with improved adhesion to low surface energy substrates
US7976634B2 (en) 2006-11-21 2011-07-12 Applied Materials, Inc. Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
US20080124946A1 (en) 2006-11-28 2008-05-29 Air Products And Chemicals, Inc. Organosilane compounds for modifying dielectrical properties of silicon oxide and silicon nitride films
US7807575B2 (en) 2006-11-29 2010-10-05 Micron Technology, Inc. Methods to reduce the critical dimension of semiconductor devices
US20080178805A1 (en) 2006-12-05 2008-07-31 Applied Materials, Inc. Mid-chamber gas distribution plate, tuned plasma flow control grid and electrode
WO2008073763A2 (en) 2006-12-07 2008-06-19 Innovalight, Inc. Methods for creating a densified group iv semiconductor nanoparticle thin film
US7960236B2 (en) 2006-12-12 2011-06-14 Applied Materials, Inc. Phosphorus containing Si epitaxial layers in N-type source/drain junctions
DE102007003416A1 (de) 2007-01-16 2008-07-17 Hansgrohe Ag Duschvorrichtung
DE102007002962B3 (de) 2007-01-19 2008-07-31 Qimonda Ag Verfahren zum Herstellen einer dielektrischen Schicht und zum Herstellen eines Kondensators
WO2008143716A2 (en) 2007-01-22 2008-11-27 Innovalight, Inc. In situ modification of group iv nanoparticles using gas phase nanoparticle reactors
JP5109376B2 (ja) 2007-01-22 2012-12-26 東京エレクトロン株式会社 加熱装置、加熱方法及び記憶媒体
US7550090B2 (en) 2007-01-23 2009-06-23 Applied Materials, Inc. Oxygen plasma clean to remove carbon species deposited on a glass dome surface
US7833353B2 (en) 2007-01-24 2010-11-16 Asm Japan K.K. Liquid material vaporization apparatus for semiconductor processing apparatus
US20080173239A1 (en) 2007-01-24 2008-07-24 Yuri Makarov Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor
US20080179715A1 (en) 2007-01-30 2008-07-31 Micron Technology, Inc. Shallow trench isolation using atomic layer deposition during fabrication of a semiconductor device
JP2008192643A (ja) 2007-01-31 2008-08-21 Tokyo Electron Ltd 基板処理装置
US7500397B2 (en) 2007-02-15 2009-03-10 Air Products And Chemicals, Inc. Activated chemical process for enhancing material properties of dielectric films
JP2008202107A (ja) 2007-02-21 2008-09-04 Hitachi Kokusai Electric Inc 基板処理装置
JP4805862B2 (ja) 2007-02-21 2011-11-02 富士通セミコンダクター株式会社 基板処理装置、基板処理方法、及び半導体装置の製造方法
US20080207007A1 (en) 2007-02-27 2008-08-28 Air Products And Chemicals, Inc. Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon-Containing Films
DE102007009914B4 (de) 2007-02-28 2010-04-22 Advanced Micro Devices, Inc., Sunnyvale Halbleiterbauelement in Form eines Feldeffekttransistors mit einem Zwischenschichtdielektrikumsmaterial mit erhöhter innerer Verspannung und Verfahren zur Herstellung desselben
US20080216077A1 (en) 2007-03-02 2008-09-04 Applied Materials, Inc. Software sequencer for integrated substrate processing system
US20080220619A1 (en) 2007-03-09 2008-09-11 Asm Japan K.K. Method for increasing mechanical strength of dielectric film by using sequential combination of two types of uv irradiation
US7833913B2 (en) 2007-03-20 2010-11-16 Tokyo Electron Limited Method of forming crystallographically stabilized doped hafnium zirconium based films
US7763869B2 (en) 2007-03-23 2010-07-27 Asm Japan K.K. UV light irradiating apparatus with liquid filter
US7435987B1 (en) 2007-03-27 2008-10-14 Intel Corporation Forming a type I heterostructure in a group IV semiconductor
US7651961B2 (en) 2007-03-30 2010-01-26 Tokyo Electron Limited Method for forming strained silicon nitride films and a device containing such films
US20080241384A1 (en) 2007-04-02 2008-10-02 Asm Genitech Korea Ltd. Lateral flow deposition apparatus and method of depositing film by using the apparatus
US8235001B2 (en) 2007-04-02 2012-08-07 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device
KR100829759B1 (ko) 2007-04-04 2008-05-15 삼성에스디아이 주식회사 카바이드 유도 탄소를 이용한 카본나노튜브 혼성체, 이를포함하는 전자 방출원 및 상기 전자 방출원을 구비한 전자방출 소자
US8357214B2 (en) 2007-04-26 2013-01-22 Trulite, Inc. Apparatus, system, and method for generating a gas from solid reactant pouches
US7575968B2 (en) 2007-04-30 2009-08-18 Freescale Semiconductor, Inc. Inverse slope isolation and dual surface orientation integration
US7713874B2 (en) 2007-05-02 2010-05-11 Asm America, Inc. Periodic plasma annealing in an ALD-type process
JP5103056B2 (ja) 2007-05-15 2012-12-19 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US20080299326A1 (en) 2007-05-30 2008-12-04 Asm Japan K.K. Plasma cvd apparatus having non-metal susceptor
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US7807578B2 (en) 2007-06-01 2010-10-05 Applied Materials, Inc. Frequency doubling using spacer mask
US20080302303A1 (en) 2007-06-07 2008-12-11 Applied Materials, Inc. Methods and apparatus for depositing a uniform silicon film with flow gradient designs
US8142606B2 (en) 2007-06-07 2012-03-27 Applied Materials, Inc. Apparatus for depositing a uniform silicon film and methods for manufacturing the same
KR101101785B1 (ko) 2007-06-08 2012-01-05 도쿄엘렉트론가부시키가이샤 패터닝 방법
JP4427562B2 (ja) 2007-06-11 2010-03-10 株式会社東芝 パターン形成方法
USD575713S1 (en) 2007-06-21 2008-08-26 Ratcliffe Peter W Vehicle accessory
US8017182B2 (en) 2007-06-21 2011-09-13 Asm International N.V. Method for depositing thin films by mixed pulsed CVD and ALD
CN100590804C (zh) 2007-06-22 2010-02-17 中芯国际集成电路制造(上海)有限公司 原子层沉积方法以及形成的半导体器件
US20090000550A1 (en) 2007-06-29 2009-01-01 Applied Materials, Inc. Manifold assembly
US20090033907A1 (en) 2007-07-05 2009-02-05 Nikon Corporation Devices and methods for decreasing residual chucking forces
US7501292B2 (en) 2007-07-19 2009-03-10 Asm Japan K.K. Method for managing UV irradiation for curing semiconductor substrate
JP4900110B2 (ja) 2007-07-20 2012-03-21 東京エレクトロン株式会社 薬液気化タンク及び薬液処理システム
US7720560B2 (en) 2007-07-26 2010-05-18 International Business Machines Corporation Semiconductor manufacturing process monitoring
US8008166B2 (en) 2007-07-26 2011-08-30 Applied Materials, Inc. Method and apparatus for cleaning a substrate surface
US8004045B2 (en) 2007-07-27 2011-08-23 Panasonic Corporation Semiconductor device and method for producing the same
WO2009023169A1 (en) 2007-08-10 2009-02-19 Nano Terra Inc. Structured smudge-resistant coatings and methods of making and using the same
US20090041952A1 (en) 2007-08-10 2009-02-12 Asm Genitech Korea Ltd. Method of depositing silicon oxide films
US7745352B2 (en) 2007-08-27 2010-06-29 Applied Materials, Inc. Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp II process
US8440259B2 (en) 2007-09-05 2013-05-14 Intermolecular, Inc. Vapor based combinatorial processing
WO2009031886A2 (en) 2007-09-07 2009-03-12 Fujifilm Manufacturing Europe B.V. Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma
CA122619S (en) 2007-10-09 2010-01-27 Silvano Breda Shower strainer
JP5347294B2 (ja) 2007-09-12 2013-11-20 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP4986784B2 (ja) 2007-09-18 2012-07-25 東京エレクトロン株式会社 処理システムの制御装置、処理システムの制御方法および制御プログラムを記憶した記憶媒体
US20090085156A1 (en) 2007-09-28 2009-04-02 Gilbert Dewey Metal surface treatments for uniformly growing dielectric layers
JP5236983B2 (ja) 2007-09-28 2013-07-17 東京エレクトロン株式会社 半導体装置の製造方法、半導体装置の製造装置、制御プログラム及びプログラム記憶媒体
US8041450B2 (en) 2007-10-04 2011-10-18 Asm Japan K.K. Position sensor system for substrate transfer robot
US7776698B2 (en) 2007-10-05 2010-08-17 Applied Materials, Inc. Selective formation of silicon carbon epitaxial layer
US20090090382A1 (en) 2007-10-05 2009-04-09 Asm Japan K.K. Method of self-cleaning of carbon-based film
US20090095221A1 (en) 2007-10-16 2009-04-16 Alexander Tam Multi-gas concentric injection showerhead
US7541297B2 (en) 2007-10-22 2009-06-02 Applied Materials, Inc. Method and system for improving dielectric film quality for void free gap fill
US7803722B2 (en) 2007-10-22 2010-09-28 Applied Materials, Inc Methods for forming a dielectric layer within trenches
US7867923B2 (en) 2007-10-22 2011-01-11 Applied Materials, Inc. High quality silicon oxide films by remote plasma CVD from disilane precursors
US7615831B2 (en) 2007-10-26 2009-11-10 International Business Machines Corporation Structure and method for fabricating self-aligned metal contacts
US7939447B2 (en) 2007-10-26 2011-05-10 Asm America, Inc. Inhibitors for selective deposition of silicon containing films
CA123273S (en) 2007-11-19 2010-01-27 Silvano Breda Shower strainer
US8272516B2 (en) 2007-11-19 2012-09-25 Caterpillar Inc. Fluid filter system
CA123272S (en) 2007-11-19 2010-01-27 Silvano Breda Shower strainer
US8021723B2 (en) 2007-11-27 2011-09-20 Asm Japan K.K. Method of plasma treatment using amplitude-modulated RF power
JP5314700B2 (ja) 2007-11-28 2013-10-16 コーニンクレッカ フィリップス エヌ ヴェ 誘電バリア放電ランプ
US8060252B2 (en) 2007-11-30 2011-11-15 Novellus Systems, Inc. High throughput method of in transit wafer position correction in system using multiple robots
US7651959B2 (en) 2007-12-03 2010-01-26 Asm Japan K.K. Method for forming silazane-based dielectric film
US20090139657A1 (en) 2007-12-04 2009-06-04 Applied Materials, Inc. Etch system
US8440569B2 (en) 2007-12-07 2013-05-14 Cadence Design Systems, Inc. Method of eliminating a lithography operation
KR100956247B1 (ko) 2007-12-13 2010-05-06 삼성엘이디 주식회사 금속유기 화학기상 증착장치
US8003174B2 (en) 2007-12-13 2011-08-23 Asm Japan K.K. Method for forming dielectric film using siloxane-silazane mixture
WO2009078249A1 (ja) 2007-12-17 2009-06-25 Orc Manufacturing Co., Ltd. 放電ランプ
US8092606B2 (en) 2007-12-18 2012-01-10 Asm Genitech Korea Ltd. Deposition apparatus
WO2009085098A1 (en) 2007-12-19 2009-07-09 Lam Research Corporation Vapor phase repair and pore sealing of low-k dielectric materials
US7678715B2 (en) 2007-12-21 2010-03-16 Applied Materials, Inc. Low wet etch rate silicon nitride film
KR20090068179A (ko) 2007-12-21 2009-06-25 에이에스엠 인터내셔널 엔.브이. 실리콘 이산화물을 포함하는 박막의 제조 방법
KR101013413B1 (ko) 2008-01-07 2011-02-14 한국과학기술연구원 플라즈마 표면 처리를 이용한 투명 기체 차단 필름의 제조방법 및 이로부터 제조된 투명 기체 차단 필름
US7935940B1 (en) 2008-01-08 2011-05-03 Novellus Systems, Inc. Measuring in-situ UV intensity in UV cure tool
US20090203197A1 (en) 2008-02-08 2009-08-13 Hiroji Hanawa Novel method for conformal plasma immersed ion implantation assisted by atomic layer deposition
GB0802486D0 (en) 2008-02-12 2008-03-19 Gilbert Patrick C Warm water economy device
US20090214777A1 (en) 2008-02-22 2009-08-27 Demetrius Sarigiannis Multiple ampoule delivery systems
KR100968132B1 (ko) 2008-02-29 2010-07-06 (주)얼라이드 테크 파인더즈 안테나 및 이를 구비한 반도체 장치
USD585968S1 (en) 2008-03-06 2009-02-03 West Coast Washers, Inc. Pipe flashing
EP2099067A1 (en) 2008-03-07 2009-09-09 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Process for adjusting the friction coefficient between surfaces of two solid objects
US8252114B2 (en) 2008-03-28 2012-08-28 Tokyo Electron Limited Gas distribution system and method for distributing process gas in a processing system
US20090246399A1 (en) 2008-03-28 2009-10-01 Asm Japan K.K. Method for activating reactive oxygen species for cleaning carbon-based film deposition
US7816278B2 (en) 2008-03-28 2010-10-19 Tokyo Electron Limited In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition
US7659158B2 (en) 2008-03-31 2010-02-09 Applied Materials, Inc. Atomic layer deposition processes for non-volatile memory devices
USD590933S1 (en) 2008-03-31 2009-04-21 Mcp Industries, Inc. Vent cap device
US7963736B2 (en) 2008-04-03 2011-06-21 Asm Japan K.K. Wafer processing apparatus with wafer alignment device
US20090250955A1 (en) 2008-04-07 2009-10-08 Applied Materials, Inc. Wafer transfer blade
US8110453B2 (en) 2008-04-17 2012-02-07 Applied Materials, Inc. Low temperature thin film transistor process, device property, and device stability improvement
US20090269506A1 (en) 2008-04-24 2009-10-29 Seiji Okura Method and apparatus for cleaning of a CVD reactor
US8252194B2 (en) 2008-05-02 2012-08-28 Micron Technology, Inc. Methods of removing silicon oxide
US7632549B2 (en) 2008-05-05 2009-12-15 Asm Japan K.K. Method of forming a high transparent carbon film
US8076237B2 (en) 2008-05-09 2011-12-13 Asm America, Inc. Method and apparatus for 3D interconnect
US20090286402A1 (en) 2008-05-13 2009-11-19 Applied Materials, Inc Method for critical dimension shrink using conformal pecvd films
US8277670B2 (en) 2008-05-13 2012-10-02 Lam Research Corporation Plasma process with photoresist mask pretreatment
US8333842B2 (en) 2008-05-15 2012-12-18 Applied Materials, Inc. Apparatus for etching semiconductor wafers
US8298628B2 (en) 2008-06-02 2012-10-30 Air Products And Chemicals, Inc. Low temperature deposition of silicon-containing films
WO2009146744A1 (de) 2008-06-05 2009-12-10 Osram Gesellschaft mit beschränkter Haftung Verfahren zur behandlung von oberflächen, strahler für dieses verfahren sowie bestrahlungssystem mit diesem strahler
JP2009295932A (ja) 2008-06-09 2009-12-17 Canon Inc 露光装置及びデバイス製造方法
US8726837B2 (en) 2008-06-23 2014-05-20 Applied Materials, Inc. Semiconductor process chamber vision and monitoring system
US8702867B2 (en) 2008-07-08 2014-04-22 Jusung Engineering Co., Ltd. Gas distribution plate and substrate treating apparatus including the same
US8058138B2 (en) 2008-07-17 2011-11-15 Micron Technology, Inc. Gap processing
USD614593S1 (en) 2008-07-21 2010-04-27 Asm Genitech Korea Ltd Substrate support for a semiconductor deposition apparatus
USD609652S1 (en) 2008-07-22 2010-02-09 Tokyo Electron Limited Wafer attracting plate
KR20100015213A (ko) 2008-08-04 2010-02-12 삼성전기주식회사 Ｃｖｄ용 샤워 헤드 및 이를 구비하는 화학 기상 증착 장치
WO2010017136A1 (en) 2008-08-04 2010-02-11 Amir Dassoud Dabiran Microchannel plate photocathode
CN102160188B (zh) 2008-08-08 2016-10-26 康奈尔研究基金会股份有限公司 无机体相多结材料及其制备方法
US8129555B2 (en) 2008-08-12 2012-03-06 Air Products And Chemicals, Inc. Precursors for depositing silicon-containing films and methods for making and using same
US8263502B2 (en) 2008-08-13 2012-09-11 Synos Technology, Inc. Forming substrate structure by filling recesses with deposition material
JP5338335B2 (ja) 2008-08-13 2013-11-13 東京エレクトロン株式会社 搬送容器の開閉装置及びプローブ装置
KR101017170B1 (ko) 2008-08-13 2011-02-25 주식회사 동부하이텍 백 메탈 공정챔버
US8147648B2 (en) 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
US20100055442A1 (en) 2008-09-03 2010-03-04 International Business Machines Corporation METHOD OF PE-ALD OF SiNxCy AND INTEGRATION OF LINER MATERIALS ON POROUS LOW K SUBSTRATES
JP2010087467A (ja) 2008-09-04 2010-04-15 Tokyo Electron Ltd 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体
USD643055S1 (en) 2008-09-11 2011-08-09 Asm Japan K.K. Heater block for use in a semiconductor processing tool
US9711373B2 (en) 2008-09-22 2017-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating a gate dielectric for high-k metal gate devices
DE102008049353A1 (de) 2008-09-29 2010-04-08 Vat Holding Ag Vakuumventil
US20100081293A1 (en) 2008-10-01 2010-04-01 Applied Materials, Inc. Methods for forming silicon nitride based film or silicon carbon based film
USD609655S1 (en) 2008-10-03 2010-02-09 Ngk Insulators, Ltd. Electrostatic chuck
CN103337453B (zh) 2008-10-07 2017-10-24 应用材料公司 用于从蚀刻基板有效地移除卤素残余物的设备
KR101627297B1 (ko) 2008-10-13 2016-06-03 한국에이에스엠지니텍 주식회사 플라즈마 처리부 및 이를 포함하는 증착 장치 및 증착 방법
KR101357181B1 (ko) 2008-10-14 2014-01-29 어플라이드 머티어리얼스, 인코포레이티드 플라즈마-강화 화학적 기상 증착(ｐｅｃｖｄ)에 의해 등각성 비정질 탄소막을 증착하기 위한 방법
US20110254052A1 (en) 2008-10-15 2011-10-20 Arizona Board of Regents, a body corporate acting for and on behalf of Arizona State University Hybrid Group IV/III-V Semiconductor Structures
JP2010097834A (ja) 2008-10-17 2010-04-30 Ushio Inc バックライトユニット
US7745346B2 (en) 2008-10-17 2010-06-29 Novellus Systems, Inc. Method for improving process control and film conformality of PECVD film
WO2010062582A2 (en) 2008-10-27 2010-06-03 Applied Materials, Inc. Vapor deposition method for ternary compounds
JP5062143B2 (ja) 2008-11-10 2012-10-31 東京エレクトロン株式会社 成膜装置
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US8647722B2 (en) 2008-11-14 2014-02-11 Asm Japan K.K. Method of forming insulation film using plasma treatment cycles
JP2010153769A (ja) 2008-11-19 2010-07-08 Tokyo Electron Ltd 基板位置検出装置、基板位置検出方法、成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体
US20100130017A1 (en) 2008-11-21 2010-05-27 Axcelis Technologies, Inc. Front end of line plasma mediated ashing processes and apparatus
US9714465B2 (en) 2008-12-01 2017-07-25 Applied Materials, Inc. Gas distribution blocker apparatus
US8138676B2 (en) 2008-12-01 2012-03-20 Mills Robert L Methods and systems for dimmable fluorescent lighting using multiple frequencies
EP2194574B1 (en) 2008-12-02 2018-11-07 IMEC vzw Method for producing interconnect structures for integrated circuits
JP5390846B2 (ja) 2008-12-09 2014-01-15 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマクリーニング方法
US20100151206A1 (en) 2008-12-11 2010-06-17 Air Products And Chemicals, Inc. Method for Removal of Carbon From An Organosilicate Material
KR20100075070A (ko) 2008-12-24 2010-07-02 삼성전자주식회사 비휘발성 메모리 장치의 제조 방법
US8216380B2 (en) 2009-01-08 2012-07-10 Asm America, Inc. Gap maintenance for opening to process chamber
US20100176513A1 (en) 2009-01-09 2010-07-15 International Business Machines Corporation Structure and method of forming metal interconnect structures in ultra low-k dielectrics
JP5846917B2 (ja) 2009-01-11 2016-01-20 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板を移動させるシステム、装置、および方法
US8151814B2 (en) 2009-01-13 2012-04-10 Asm Japan K.K. Method for controlling flow and concentration of liquid precursor
USD606952S1 (en) 2009-01-16 2009-12-29 Asm Genitech Korea Ltd. Plasma inducing plate for semiconductor deposition apparatus
US8591659B1 (en) 2009-01-16 2013-11-26 Novellus Systems, Inc. Plasma clean method for deposition chamber
US7972980B2 (en) 2009-01-21 2011-07-05 Asm Japan K.K. Method of forming conformal dielectric film having Si-N bonds by PECVD
US8142862B2 (en) 2009-01-21 2012-03-27 Asm Japan K.K. Method of forming conformal dielectric film having Si-N bonds by PECVD
US7919416B2 (en) 2009-01-21 2011-04-05 Asm Japan K.K. Method of forming conformal dielectric film having Si-N bonds by PECVD
US8680650B2 (en) 2009-02-03 2014-03-25 Micron Technology, Inc. Capacitor structures having improved area efficiency
KR101691044B1 (ko) 2009-02-04 2016-12-29 맷슨 테크놀로지, 인크. 기판의 표면에 걸친 온도 프로파일을 방사상으로 튜닝하는 정전 척 시스템 및 방법
US8307472B1 (en) 2009-02-04 2012-11-13 Thomas Jason Saxon Light emitting diode system
US8287648B2 (en) 2009-02-09 2012-10-16 Asm America, Inc. Method and apparatus for minimizing contamination in semiconductor processing chamber
US20120003500A1 (en) 2009-02-16 2012-01-05 Mitsubishi Plastics, Inc. Process for producing multilayered gas-barrier film
JP2010205967A (ja) 2009-03-04 2010-09-16 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体
JP5221421B2 (ja) 2009-03-10 2013-06-26 東京エレクトロン株式会社 シャワーヘッド及びプラズマ処理装置
US8703624B2 (en) 2009-03-13 2014-04-22 Air Products And Chemicals, Inc. Dielectric films comprising silicon and methods for making same
TW201118977A (en) 2009-03-26 2011-06-01 Panasonic Corp Plasma processing apparatus and plasma processing method
JP5292160B2 (ja) 2009-03-31 2013-09-18 東京エレクトロン株式会社 ガス流路構造体及び基板処理装置
US8197915B2 (en) 2009-04-01 2012-06-12 Asm Japan K.K. Method of depositing silicon oxide film by plasma enhanced atomic layer deposition at low temperature
US8284601B2 (en) 2009-04-01 2012-10-09 Samsung Electronics Co., Ltd. Semiconductor memory device comprising three-dimensional memory cell array
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
JP5338443B2 (ja) 2009-04-14 2013-11-13 信越半導体株式会社 Ｓｏｉウェーハの製造方法
CN102414794B (zh) 2009-04-21 2015-01-28 应用材料公司 改良膜厚度不均匀性与粒子表现的cvd设备
US8071452B2 (en) 2009-04-27 2011-12-06 Asm America, Inc. Atomic layer deposition of hafnium lanthanum oxides
JP5136574B2 (ja) 2009-05-01 2013-02-06 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US7842622B1 (en) 2009-05-15 2010-11-30 Asm Japan K.K. Method of forming highly conformal amorphous carbon layer
US8004198B2 (en) 2009-05-28 2011-08-23 Osram Sylvania Inc. Resetting an electronic ballast in the event of fault
US20100317198A1 (en) 2009-06-12 2010-12-16 Novellus Systems, Inc. Remote plasma processing of interface surfaces
USD652896S1 (en) 2009-06-17 2012-01-24 Neoperl Gmbh Faucet stream former
US7825040B1 (en) 2009-06-22 2010-11-02 Asm Japan K.K. Method for depositing flowable material using alkoxysilane or aminosilane precursor
KR101110080B1 (ko) 2009-07-08 2012-03-13 주식회사 유진테크 확산판을 선택적으로 삽입설치하는 기판처리방법
US20110006406A1 (en) 2009-07-08 2011-01-13 Imec Fabrication of porogen residues free and mechanically robust low-k materials
JP2011023718A (ja) 2009-07-15 2011-02-03 Asm Japan Kk ＰＥＡＬＤによってＳｉ−Ｎ結合を有するストレス調節された誘電体膜を形成する方法
KR101687049B1 (ko) 2009-07-17 2016-12-15 미쓰이 가가쿠 가부시키가이샤 적층체 및 그 제조 방법
US8071451B2 (en) 2009-07-29 2011-12-06 Axcelis Technologies, Inc. Method of doping semiconductors
US8741788B2 (en) 2009-08-06 2014-06-03 Applied Materials, Inc. Formation of silicon oxide using non-carbon flowable CVD processes
US8877655B2 (en) 2010-05-07 2014-11-04 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US8883270B2 (en) 2009-08-14 2014-11-11 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
KR101031226B1 (ko) 2009-08-21 2011-04-29 에이피시스템 주식회사 급속열처리 장치의 히터블록
USD634719S1 (en) 2009-08-27 2011-03-22 Ebara Corporation Elastic membrane for semiconductor wafer polishing apparatus
KR20120090996A (ko) 2009-08-27 2012-08-17 어플라이드 머티어리얼스, 인코포레이티드 인-시튜 챔버 세정 후 프로세스 챔버의 제염 방법
WO2011026064A1 (en) 2009-08-31 2011-03-03 The Penn State Research Foundation Improved plasma enhanced atomic layer deposition process
JP5457109B2 (ja) 2009-09-02 2014-04-02 東京エレクトロン株式会社 プラズマ処理装置
US9076634B2 (en) 2009-09-10 2015-07-07 Lam Research Corporation Replaceable upper chamber parts of plasma processing apparatus
US20110061810A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
EP2306497B1 (en) 2009-10-02 2012-06-06 Imec Method for manufacturing a low defect interface between a dielectric and a III/V compound
US8173554B2 (en) 2009-10-14 2012-05-08 Asm Japan K.K. Method of depositing dielectric film having Si-N bonds by modified peald method
US8415259B2 (en) 2009-10-14 2013-04-09 Asm Japan K.K. Method of depositing dielectric film by modified PEALD method
US8465791B2 (en) 2009-10-16 2013-06-18 Msp Corporation Method for counting particles in a gas
US20110097901A1 (en) 2009-10-26 2011-04-28 Applied Materials, Inc. Dual mode inductively coupled plasma reactor with adjustable phase coil assembly
JP5451324B2 (ja) 2009-11-10 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8854734B2 (en) 2009-11-12 2014-10-07 Vela Technologies, Inc. Integrating optical system and methods
US8367528B2 (en) 2009-11-17 2013-02-05 Asm America, Inc. Cyclical epitaxial deposition and etch
JP5753351B2 (ja) 2009-11-19 2015-07-22 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 電子デバイスを形成する方法
KR20110055912A (ko) 2009-11-20 2011-05-26 주식회사 하이닉스반도체 반도체 소자의 콘택홀 형성방법
AU329418S (en) 2009-11-23 2010-01-29 Pusher tool
US8328494B2 (en) 2009-12-15 2012-12-11 Varian Semiconductor Equipment Associates, Inc. In vacuum optical wafer heater for cryogenic processing
US20110139748A1 (en) 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
US20110159202A1 (en) 2009-12-29 2011-06-30 Asm Japan K.K. Method for Sealing Pores at Surface of Dielectric Layer by UV Light-Assisted CVD
USD653734S1 (en) 2010-01-08 2012-02-07 Bulk Tank, Inc. Screened gasket
US20110183269A1 (en) 2010-01-25 2011-07-28 Hongbin Zhu Methods Of Forming Patterns, And Methods For Trimming Photoresist Features
US8480942B2 (en) 2010-01-27 2013-07-09 The Board Of Trustees Of The University Of Illinois Method of forming a patterned layer of a material on a substrate
WO2011096208A1 (ja) 2010-02-05 2011-08-11 東京エレクトロン株式会社 基板保持具及び基板搬送装置及び基板処理装置
KR101080604B1 (ko) 2010-02-09 2011-11-04 성균관대학교산학협력단 원자층 식각 장치 및 이를 이용한 식각 방법
US8293658B2 (en) 2010-02-17 2012-10-23 Asm America, Inc. Reactive site deactivation against vapor deposition
US8241991B2 (en) 2010-03-05 2012-08-14 Asm Japan K.K. Method for forming interconnect structure having airgap
FR2957716B1 (fr) 2010-03-18 2012-10-05 Soitec Silicon On Insulator Procede de finition d'un substrat de type semi-conducteur sur isolant
US8709551B2 (en) 2010-03-25 2014-04-29 Novellus Systems, Inc. Smooth silicon-containing films
US8252691B2 (en) 2010-04-14 2012-08-28 Asm Genitech Korea Ltd. Method of forming semiconductor patterns
US8956983B2 (en) 2010-04-15 2015-02-17 Novellus Systems, Inc. Conformal doping via plasma activated atomic layer deposition and conformal film deposition
US20110256734A1 (en) 2010-04-15 2011-10-20 Hausmann Dennis M Silicon nitride films and methods
US8707754B2 (en) 2010-04-30 2014-04-29 Applied Materials, Inc. Methods and apparatus for calibrating flow controllers in substrate processing systems
US8721798B2 (en) 2010-04-30 2014-05-13 Applied Materials, Inc. Methods for processing substrates in process systems having shared resources
US20110265951A1 (en) 2010-04-30 2011-11-03 Applied Materials, Inc. Twin chamber processing system
US20110294075A1 (en) 2010-05-25 2011-12-01 United Microelectronics Corp. Patterning method
US8912353B2 (en) 2010-06-02 2014-12-16 Air Products And Chemicals, Inc. Organoaminosilane precursors and methods for depositing films comprising same
JP5525339B2 (ja) 2010-06-10 2014-06-18 ナブテスコ株式会社 ロボットアーム
US9443753B2 (en) 2010-07-30 2016-09-13 Applied Materials, Inc. Apparatus for controlling the flow of a gas in a process chamber
US8669185B2 (en) 2010-07-30 2014-03-11 Asm Japan K.K. Method of tailoring conformality of Si-containing film
US8357608B2 (en) 2010-08-09 2013-01-22 International Business Machines Corporation Multi component dielectric layer
US9449858B2 (en) 2010-08-09 2016-09-20 Applied Materials, Inc. Transparent reflector plate for rapid thermal processing chamber
US8685845B2 (en) 2010-08-20 2014-04-01 International Business Machines Corporation Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas
US8945305B2 (en) 2010-08-31 2015-02-03 Micron Technology, Inc. Methods of selectively forming a material using parylene coating
EP2426233B1 (en) 2010-09-03 2013-05-01 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Use of dialkyl monoalkoxy aluminum for the growth of Al2O3 thin films for photovoltaic applications
US8394466B2 (en) 2010-09-03 2013-03-12 Asm Japan K.K. Method of forming conformal film having si-N bonds on high-aspect ratio pattern
USD654884S1 (en) 2010-10-21 2012-02-28 Tokyo Electron Limited Top plate for reactor for manufacturing semiconductor
US8192901B2 (en) 2010-10-21 2012-06-05 Asahi Glass Company, Limited Glass substrate-holding tool
US8845806B2 (en) 2010-10-22 2014-09-30 Asm Japan K.K. Shower plate having different aperture dimensions and/or distributions
KR20130141550A (ko) 2010-10-27 2013-12-26 어플라이드 머티어리얼스, 인코포레이티드 포토레지스트 선폭 거칠기를 조절하기 위한 방법들 및 장치
KR20130135261A (ko) 2010-11-03 2013-12-10 어플라이드 머티어리얼스, 인코포레이티드 실리콘 카바이드 및 실리콘 카보나이트라이드 막들을 증착하기 위한 장치 및 방법들
US8470187B2 (en) 2010-11-05 2013-06-25 Asm Japan K.K. Method of depositing film with tailored comformality
WO2012061278A1 (en) 2010-11-05 2012-05-10 Synos Technology, Inc. Radical reactor with multiple plasma chambers
US20120121823A1 (en) 2010-11-12 2012-05-17 Applied Materials, Inc. Process for lowering adhesion layer thickness and improving damage resistance for thin ultra low-k dielectric film
KR101849443B1 (ko) 2010-12-20 2018-04-16 에베 그룹 에. 탈너 게엠베하 웨이퍼의 장착을 위한 수용 수단
JP5735304B2 (ja) 2010-12-21 2015-06-17 株式会社日立国際電気 基板処理装置、基板の製造方法、半導体デバイスの製造方法およびガス供給管
US8314034B2 (en) 2010-12-23 2012-11-20 Intel Corporation Feature size reduction
JP2012138500A (ja) 2010-12-27 2012-07-19 Tokyo Electron Ltd タングステン膜又は酸化タングステン膜上への酸化シリコン膜の成膜方法及び成膜装置
JP5675331B2 (ja) 2010-12-27 2015-02-25 東京エレクトロン株式会社 トレンチの埋め込み方法
US8901016B2 (en) 2010-12-28 2014-12-02 Asm Japan K.K. Method of forming metal oxide hardmask
JP5573666B2 (ja) 2010-12-28 2014-08-20 東京エレクトロン株式会社 原料供給装置及び成膜装置
FR2970110B1 (fr) 2010-12-29 2013-09-06 St Microelectronics Crolles 2 Procede de fabrication d'une couche de dielectrique polycristalline
KR101563541B1 (ko) 2010-12-30 2015-10-27 어플라이드 머티어리얼스, 인코포레이티드 마이크로파 플라즈마를 이용한 박막 증착
JP5609663B2 (ja) 2011-01-18 2014-10-22 旭硝子株式会社 ガラス基板保持手段、およびそれを用いたｅｕｖマスクブランクスの製造方法
US8465811B2 (en) 2011-01-28 2013-06-18 Asm Japan K.K. Method of depositing film by atomic layer deposition with pulse-time-modulated plasma
US20120263876A1 (en) 2011-02-14 2012-10-18 Asm Ip Holding B.V. Deposition of silicon dioxide on hydrophobic surfaces
US8563443B2 (en) 2011-02-18 2013-10-22 Asm Japan K.K. Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen
US8329599B2 (en) 2011-02-18 2012-12-11 Asm Japan K.K. Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen
TWM412450U (en) 2011-02-21 2011-09-21 Santoma Ltd Ceramic Glass composite electrode and Fluorescent
US8735299B2 (en) 2011-03-03 2014-05-27 Tokyo Electron Limited Semiconductor device manufacturing method and computer-readable storage medium
US8466411B2 (en) 2011-03-03 2013-06-18 Asm Japan K.K. Calibration method of UV sensor for UV curing
JP5820731B2 (ja) 2011-03-22 2015-11-24 株式会社日立国際電気 基板処理装置および固体原料補充方法
JP5203482B2 (ja) 2011-03-28 2013-06-05 株式会社小松製作所 加熱装置
JP5922219B2 (ja) 2011-03-31 2016-05-24 アイメックＩｍｅｃ 単結晶スズ含有半導体材料を成長させる方法
US8900402B2 (en) 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
US8298951B1 (en) 2011-04-13 2012-10-30 Asm Japan K.K. Footing reduction using etch-selective layer
CN103493193A (zh) 2011-04-15 2014-01-01 龙云株式会社 晶圆更换装置及晶圆支承用柄
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
US8492170B2 (en) 2011-04-25 2013-07-23 Applied Materials, Inc. UV assisted silylation for recovery and pore sealing of damaged low K films
US8592005B2 (en) 2011-04-26 2013-11-26 Asm Japan K.K. Atomic layer deposition for controlling vertical film growth
USD655055S1 (en) 2011-04-28 2012-02-28 Carolyn Grace Toll Pet outfit
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
US20120304935A1 (en) 2011-05-31 2012-12-06 Oosterlaken Theodorus G M Bubbler assembly and method for vapor flow control
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US8927318B2 (en) 2011-06-14 2015-01-06 International Business Machines Corporation Spalling methods to form multi-junction photovoltaic structure
US9175392B2 (en) 2011-06-17 2015-11-03 Intermolecular, Inc. System for multi-region processing
US9793148B2 (en) 2011-06-22 2017-10-17 Asm Japan K.K. Method for positioning wafers in multiple wafer transport
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US8962400B2 (en) 2011-07-07 2015-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. In-situ doping of arsenic for source and drain epitaxy
US20130014697A1 (en) 2011-07-12 2013-01-17 Asm Japan K.K. Container Having Multiple Compartments Containing Liquid Material for Multiple Wafer-Processing Chambers
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
JP5940342B2 (ja) 2011-07-15 2016-06-29 東京エレクトロン株式会社 基板搬送装置、基板処理システムおよび基板搬送方法、ならびに記憶媒体
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US8617411B2 (en) 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
US8778448B2 (en) 2011-07-21 2014-07-15 International Business Machines Corporation Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys
US8551892B2 (en) 2011-07-27 2013-10-08 Asm Japan K.K. Method for reducing dielectric constant of film using direct plasma of hydrogen
US20130048606A1 (en) 2011-08-31 2013-02-28 Zhigang Mao Methods for in-situ chamber dry clean in photomask plasma etching processing chamber
US20130217239A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Flowable silicon-and-carbon-containing layers for semiconductor processing
US20130217240A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Flowable silicon-carbon-nitrogen layers for semiconductor processing
US20130217241A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Treatments for decreasing etch rates after flowable deposition of silicon-carbon-and-nitrogen-containing layers
US20130064973A1 (en) 2011-09-09 2013-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Chamber Conditioning Method
US20130217243A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Doping of dielectric layers
US20130068970A1 (en) 2011-09-21 2013-03-21 Asm Japan K.K. UV Irradiation Apparatus Having UV Lamp-Shared Multiple Process Stations
JP5549655B2 (ja) 2011-09-26 2014-07-16 株式会社安川電機 ハンドおよびロボット
US8993072B2 (en) 2011-09-27 2015-03-31 Air Products And Chemicals, Inc. Halogenated organoaminosilane precursors and methods for depositing films comprising same
US9644796B2 (en) 2011-09-29 2017-05-09 Applied Materials, Inc. Methods for in-situ calibration of a flow controller
US8569184B2 (en) 2011-09-30 2013-10-29 Asm Japan K.K. Method for forming single-phase multi-element film by PEALD
US9096931B2 (en) 2011-10-27 2015-08-04 Asm America, Inc Deposition valve assembly and method of heating the same
US9341296B2 (en) 2011-10-27 2016-05-17 Asm America, Inc. Heater jacket for a fluid line
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
TWI606136B (zh) 2011-11-04 2017-11-21 Ａｓｍ國際股份有限公司 沉積摻雜氧化矽的方法以及用於沉積摻雜氧化矽至基板上的原子層沉積製程
US8927059B2 (en) 2011-11-08 2015-01-06 Applied Materials, Inc. Deposition of metal films using alane-based precursors
US20130122712A1 (en) 2011-11-14 2013-05-16 Jong Mun Kim Method of etching high aspect ratio features in a dielectric layer
US9005539B2 (en) 2011-11-23 2015-04-14 Asm Ip Holding B.V. Chamber sealing member
US9167625B2 (en) 2011-11-23 2015-10-20 Asm Ip Holding B.V. Radiation shielding for a substrate holder
US10276410B2 (en) 2011-11-25 2019-04-30 Nhk Spring Co., Ltd. Substrate support device
US8633115B2 (en) 2011-11-30 2014-01-21 Applied Materials, Inc. Methods for atomic layer etching
USD691974S1 (en) 2011-12-22 2013-10-22 Tokyo Electron Limited Holding pad for transferring a wafer
WO2013095651A1 (en) 2011-12-23 2013-06-27 Intel Corporation Non-planar gate all-around device and method of fabrication thereof
US8883028B2 (en) 2011-12-28 2014-11-11 Lam Research Corporation Mixed mode pulsing etching in plasma processing systems
USD676943S1 (en) 2012-01-11 2013-02-26 Bill Kluss Pipe end cap
US20130183814A1 (en) 2012-01-13 2013-07-18 Applied Materials, Inc. Method of depositing a silicon germanium tin layer on a substrate
USD665055S1 (en) 2012-01-24 2012-08-07 Asm Ip Holding B.V. Shower plate
JP5601331B2 (ja) 2012-01-26 2014-10-08 株式会社安川電機 ロボットハンドおよびロボット
US8728955B2 (en) 2012-02-14 2014-05-20 Novellus Systems, Inc. Method of plasma activated deposition of a conformal film on a substrate surface
JP5912637B2 (ja) 2012-02-17 2016-04-27 東京エレクトロン株式会社 半導体装置の製造方法
US20130224964A1 (en) 2012-02-28 2013-08-29 Asm Ip Holding B.V. Method for Forming Dielectric Film Containing Si-C bonds by Atomic Layer Deposition Using Precursor Containing Si-C-Si bond
US9202727B2 (en) 2012-03-02 2015-12-01 ASM IP Holding Susceptor heater shim
CN104271797B (zh) 2012-03-09 2017-08-25 弗萨姆材料美国有限责任公司 显示器件的阻隔材料
US8912101B2 (en) 2012-03-15 2014-12-16 Asm Ip Holding B.V. Method for forming Si-containing film using two precursors by ALD
USD715410S1 (en) 2012-03-21 2014-10-14 Blucher Metal A/S Roof drain
US9082684B2 (en) 2012-04-02 2015-07-14 Applied Materials, Inc. Method of epitaxial doped germanium tin alloy formation
US8946830B2 (en) 2012-04-04 2015-02-03 Asm Ip Holdings B.V. Metal oxide protective layer for a semiconductor device
US9460912B2 (en) 2012-04-12 2016-10-04 Air Products And Chemicals, Inc. High temperature atomic layer deposition of silicon oxide thin films
US8535767B1 (en) 2012-04-18 2013-09-17 Asm Ip Holding B.V. Method for repairing damage of dielectric film by hydrocarbon restoration and hydrocarbon depletion using UV irradiation
US8647439B2 (en) 2012-04-26 2014-02-11 Applied Materials, Inc. Method of epitaxial germanium tin alloy surface preparation
TWI622664B (zh) 2012-05-02 2018-05-01 Ａｓｍ智慧財產控股公司 相穩定薄膜，包括該薄膜之結構及裝置，及其形成方法
US8728832B2 (en) 2012-05-07 2014-05-20 Asm Ip Holdings B.V. Semiconductor device dielectric interface layer
US8937336B2 (en) * 2012-05-17 2015-01-20 The Hong Kong University Of Science And Technology Passivation of group III-nitride heterojunction devices
US8785215B2 (en) 2012-05-31 2014-07-22 Asm Ip Holding B.V. Method for repairing damage of dielectric film by cyclic processes
US9978585B2 (en) 2012-06-01 2018-05-22 Versum Materials Us, Llc Organoaminodisilane precursors and methods for depositing films comprising same
US9337018B2 (en) 2012-06-01 2016-05-10 Air Products And Chemicals, Inc. Methods for depositing films with organoaminodisilane precursors
US20130330911A1 (en) 2012-06-08 2013-12-12 Yi-Chiau Huang Method of semiconductor film stabilization
US8722546B2 (en) 2012-06-11 2014-05-13 Asm Ip Holding B.V. Method for forming silicon-containing dielectric film by cyclic deposition with side wall coverage control
US9984866B2 (en) 2012-06-12 2018-05-29 Component Re-Engineering Company, Inc. Multiple zone heater
US8933375B2 (en) 2012-06-27 2015-01-13 Asm Ip Holding B.V. Susceptor heater and method of heating a substrate
US9023737B2 (en) 2012-07-11 2015-05-05 Asm Ip Holding B.V. Method for forming conformal, homogeneous dielectric film by cyclic deposition and heat treatment
US8784950B2 (en) 2012-07-16 2014-07-22 Asm Ip Holding B.V. Method for forming aluminum oxide film using Al compound containing alkyl group and alkoxy or alkylamine group
JP2015528011A (ja) 2012-07-20 2015-09-24 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード Ａｌｄ／ｃｖｄシリコン含有膜用のオルガノシラン前駆体
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9117866B2 (en) 2012-07-31 2015-08-25 Asm Ip Holding B.V. Apparatus and method for calculating a wafer position in a processing chamber under process conditions
US8911826B2 (en) 2012-08-02 2014-12-16 Asm Ip Holding B.V. Method of parallel shift operation of multiple reactors
US8664627B1 (en) 2012-08-08 2014-03-04 Asm Ip Holding B.V. Method for supplying gas with flow rate gradient over substrate
US8912070B2 (en) 2012-08-16 2014-12-16 The Institute of Microelectronics Chinese Academy of Science Method for manufacturing semiconductor device
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US9169975B2 (en) 2012-08-28 2015-10-27 Asm Ip Holding B.V. Systems and methods for mass flow controller verification
US8742668B2 (en) 2012-09-05 2014-06-03 Asm Ip Holdings B.V. Method for stabilizing plasma ignition
KR102296150B1 (ko) 2012-09-07 2021-08-30 어플라이드 머티어리얼스, 인코포레이티드 멀티-챔버 진공 시스템 확인 내에서의 다공성 유전체, 폴리머-코팅된 기판들 및 에폭시의 통합 프로세싱
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
US20140077240A1 (en) 2012-09-17 2014-03-20 Radek Roucka Iv material photonic device on dbr
US8921207B2 (en) 2012-09-24 2014-12-30 Asm Ip Holding B.V., Inc. Tin precursors for vapor deposition and deposition processes
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
JP6042160B2 (ja) * 2012-10-03 2016-12-14 東京エレクトロン株式会社 成膜方法及び成膜装置
US20140099798A1 (en) 2012-10-05 2014-04-10 Asm Ip Holding B.V. UV-Curing Apparatus Provided With Wavelength-Tuned Excimer Lamp and Method of Processing Semiconductor Substrate Using Same
US9353441B2 (en) 2012-10-05 2016-05-31 Asm Ip Holding B.V. Heating/cooling pedestal for semiconductor-processing apparatus
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
JP2014086472A (ja) 2012-10-19 2014-05-12 Sinfonia Technology Co Ltd クランプ装置及びワーク搬送ロボット
JP5960028B2 (ja) 2012-10-31 2016-08-02 東京エレクトロン株式会社 熱処理装置
US20140116335A1 (en) 2012-10-31 2014-05-01 Asm Ip Holding B.V. UV Irradiation Apparatus with Cleaning Mechanism and Method for Cleaning UV Irradiation Apparatus
US9105587B2 (en) 2012-11-08 2015-08-11 Micron Technology, Inc. Methods of forming semiconductor structures with sulfur dioxide etch chemistries
US8784951B2 (en) 2012-11-16 2014-07-22 Asm Ip Holding B.V. Method for forming insulation film using non-halide precursor having four or more silicons
US9640416B2 (en) 2012-12-26 2017-05-02 Asm Ip Holding B.V. Single-and dual-chamber module-attachable wafer-handling chamber
US20140182053A1 (en) 2012-12-29 2014-07-03 Alexander Yeh Industry Co., Ltd. Pullable drain plug
US9018093B2 (en) 2013-01-25 2015-04-28 Asm Ip Holding B.V. Method for forming layer constituted by repeated stacked layers
US8894870B2 (en) 2013-02-01 2014-11-25 Asm Ip Holding B.V. Multi-step method and apparatus for etching compounds containing a metal
KR20140102782A (ko) 2013-02-14 2014-08-25 삼성전자주식회사 웨이퍼 이송용 블레이드 및 이를 포함하는 웨이퍼 이송 장치
US8790743B1 (en) 2013-03-04 2014-07-29 Asm Ip Holding B.V. Method for controlling cyclic plasma-assisted process
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
USD723153S1 (en) 2013-03-08 2015-02-24 Olen Borkholder Recess ceiling fan bezel
US8841182B1 (en) 2013-03-14 2014-09-23 Asm Ip Holding B.V. Silane and borane treatments for titanium carbide films
US9666702B2 (en) 2013-03-15 2017-05-30 Matthew H. Kim Advanced heterojunction devices and methods of manufacturing advanced heterojunction devices
JP6096547B2 (ja) 2013-03-21 2017-03-15 東京エレクトロン株式会社 プラズマ処理装置及びシャワープレート
USD734377S1 (en) 2013-03-28 2015-07-14 Hirata Corporation Top cover of a load lock chamber
US8864202B1 (en) 2013-04-12 2014-10-21 Varian Semiconductor Equipment Associates, Inc. Spring retained end effector contact pad
US9142393B2 (en) 2013-05-23 2015-09-22 Asm Ip Holding B.V. Method for cleaning reaction chamber using pre-cleaning process
US9365924B2 (en) 2013-05-23 2016-06-14 Asm Ip Holding B.V. Method for forming film by plasma-assisted deposition using two-frequency combined pulsed RF power
USD726365S1 (en) 2013-05-29 2015-04-07 Sis Resources Ltd. Mouthpiece plug for electronic cigarette
US9117657B2 (en) 2013-06-07 2015-08-25 Asm Ip Holding B.V. Method for filling recesses using pre-treatment with hydrocarbon-containing gas
US9245740B2 (en) 2013-06-07 2016-01-26 Dnf Co., Ltd. Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same
US9123510B2 (en) 2013-06-12 2015-09-01 ASM IP Holding, B.V. Method for controlling in-plane uniformity of substrate processed by plasma-assisted process
US20140367043A1 (en) 2013-06-17 2014-12-18 Applied Materials, Inc. Method for fast and repeatable plasma ignition and tuning in plasma chambers
CN110592554A (zh) 2013-06-26 2019-12-20 应用材料公司 沉积金属合金膜的方法
US9677176B2 (en) 2013-07-03 2017-06-13 Novellus Systems, Inc. Multi-plenum, dual-temperature showerhead
JP5861676B2 (ja) 2013-07-08 2016-02-16 株式会社安川電機 吸着構造、ロボットハンドおよびロボット
USD705745S1 (en) 2013-07-08 2014-05-27 Witricity Corporation Printed resonator coil
US8993054B2 (en) 2013-07-12 2015-03-31 Asm Ip Holding B.V. Method and system to reduce outgassing in a reaction chamber
US8940646B1 (en) 2013-07-12 2015-01-27 Lam Research Corporation Sequential precursor dosing in an ALD multi-station/batch reactor
US9018111B2 (en) 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US9396934B2 (en) 2013-08-14 2016-07-19 Asm Ip Holding B.V. Methods of forming films including germanium tin and structures and devices including the films
US9190263B2 (en) 2013-08-22 2015-11-17 Asm Ip Holding B.V. Method for forming SiOCH film using organoaminosilane annealing
US9136108B2 (en) 2013-09-04 2015-09-15 Asm Ip Holding B.V. Method for restoring porous surface of dielectric layer by UV light-assisted ALD
USD716742S1 (en) 2013-09-13 2014-11-04 Asm Ip Holding B.V. Substrate supporter for semiconductor deposition apparatus
USD724553S1 (en) 2013-09-13 2015-03-17 Asm Ip Holding B.V. Substrate supporter for semiconductor deposition apparatus
US10312127B2 (en) 2013-09-16 2019-06-04 Applied Materials, Inc. Compliant robot blade for defect reduction
CN105556654B (zh) 2013-09-26 2019-07-26 应用材料公司 用于传送基板的气动终端受动器装置、基板传送系统与方法
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
US9029272B1 (en) 2013-10-31 2015-05-12 Asm Ip Holding B.V. Method for treating SiOCH film with hydrogen plasma
US9605343B2 (en) 2013-11-13 2017-03-28 Asm Ip Holding B.V. Method for forming conformal carbon films, structures conformal carbon film, and system of forming same
USD739222S1 (en) 2013-11-13 2015-09-22 Jeff Chadbourne Two-piece magnetic clamp
US10179947B2 (en) 2013-11-26 2019-01-15 Asm Ip Holding B.V. Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition
US10431489B2 (en) 2013-12-17 2019-10-01 Applied Materials, Inc. Substrate support apparatus having reduced substrate particle generation
US9698035B2 (en) 2013-12-23 2017-07-04 Lam Research Corporation Microstructures for improved wafer handling
USD732644S1 (en) 2014-02-04 2015-06-23 Asm Ip Holding B.V. Top plate
US9370863B2 (en) 2014-02-04 2016-06-21 Asm Ip Holding B.V. Anti-slip end-effector for transporting workpiece
USD724701S1 (en) 2014-02-04 2015-03-17 ASM IP Holding, B.V. Shower plate
USD720838S1 (en) 2014-02-04 2015-01-06 Asm Ip Holding B.V. Shower plate
USD732145S1 (en) 2014-02-04 2015-06-16 Asm Ip Holding B.V. Shower plate
USD725168S1 (en) 2014-02-04 2015-03-24 Asm Ip Holding B.V. Heater block
USD726884S1 (en) 2014-02-04 2015-04-14 Asm Ip Holding B.V. Heater block
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US20150267295A1 (en) 2014-03-19 2015-09-24 Asm Ip Holding B.V. Removable substrate tray and assembly and reactor including same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US9343350B2 (en) 2014-04-03 2016-05-17 Asm Ip Holding B.V. Anti-slip end effector for transporting workpiece using van der waals force
US9663857B2 (en) 2014-04-07 2017-05-30 Asm Ip Holding B.V. Method for stabilizing reaction chamber pressure
US9404587B2 (en) 2014-04-24 2016-08-02 ASM IP Holding B.V Lockout tagout for semiconductor vacuum valve
US9464352B2 (en) 2014-05-02 2016-10-11 Asm Ip Holding B.V. Low-oxidation plasma-assisted process
TWI518751B (zh) 2014-05-14 2016-01-21 國立清華大學 成分元素濃度漸變分佈之載子通道及其製作方法
USD743513S1 (en) 2014-06-13 2015-11-17 Asm Ip Holding B.V. Seal ring
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109309044A (zh) * 2017-07-28 2019-02-05 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
CN109309044B (zh) * 2017-07-28 2020-11-27 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
CN110112313A (zh) * 2019-05-17 2019-08-09 华中科技大学 一种柔性器件的超薄复合封装薄膜结构及制备方法
CN110112313B (zh) * 2019-05-17 2021-02-05 华中科技大学 一种柔性器件的超薄复合封装薄膜结构及制备方法
CN111364017A (zh) * 2020-04-20 2020-07-03 国家纳米科学中心 一种氮化铝薄膜及其制备方法和用途
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