TWI774025B - 增進製程均勻性的方法及系統 - Google Patents

增進製程均勻性的方法及系統 Download PDF

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TWI774025B
TWI774025B TW109125229A TW109125229A TWI774025B TW I774025 B TWI774025 B TW I774025B TW 109125229 A TW109125229 A TW 109125229A TW 109125229 A TW109125229 A TW 109125229A TW I774025 B TWI774025 B TW I774025B
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沙拉傑特 辛
永崙 曹
張景春
李資慧
張漢申
德米翠 露波默斯基
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美商應用材料股份有限公司
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Abstract

半導體處理腔室可包含遠端電漿區域，及與遠端電漿區域流體耦接的處理區域。處理區域可經配置以容納在支撐基座上的基板。支撐基座可包含在基座的內側區域處的第一材料。支撐基座亦可包含與基座之遠端部分耦接的或在基座的外側區域處的環形構件。環形構件可包含與第一材料不同之第二材料。

Description

增進製程均勻性的方法及系統
本技術關於半導體製程和設備。更具體地，本技術關於在蝕刻操作期間改善製程的均勻性。
積體電路是藉由產生具有複雜圖案的材料層於基板表面上的製程而成為可能。在基板上產生之具有圖案的材料需要受控的方法以移除暴露的材料。相同的程序可在許多基板上進行，且製程條件和結果係通常保持在嚴格的公差範圍內。通常當蝕刻或移除操作被執行時，跨越基板的均勻性係難以保持。
在很多情況中，基於腔室配置或製程條件，保持移除操作的均勻性可能係難以控制。雖然製程條件可被調整，製程條件的公差可能限制可修改的量或程度。為此理由，均勻性只可通過製程條件而控制至有限的程度。
因此，存在有改良的系統部件之需求，系統部件可允許從中央區域至邊緣區域跨越基板的整個表面之製程條件的改良均勻性。這些和其它需求係藉由本技術而解決。
描述用於改善製程均勻性的方法和系統，且示例性的半導體處理腔室可包含遠端電漿區域，及與遠端電漿區域流體耦接的處理區域。處理區域可經配置以容納在支撐基座上的基板。支撐基座可包含在基座的內側區域處的第一材料。支撐基座亦可包含與基座之遠端部分耦接的或在基座的外側區域處的環形構件。環形構件可包含與第一材料不同之第二材料。
環形構件可包含鍍有第二材料的第一材料，且在實施例中，第二材料可不被設置在與支撐基座接觸的環形構件的表面上。環形構件可沿基座的外部邊緣朝基座的桿件區域而延伸。支撐基座可包含上表面，且環形構件可垂直地延伸於在實施例中之支撐基座的上表面之上。環形構件可在超過置中的基板區域的大小之邊緣區域處與支撐基座耦接。在實施例中，相較於第一材料而言，氟對第二材料可具有較高的親合性，且第二材料可包含鎳或鉑。處理區域可至少部分地藉由側壁而被界定，且在實施例中，側壁可包含第二材料。此外，側壁加熱元件可被鑲嵌在鄰近噴淋頭之側壁中。支撐基座亦可包含基座溫度控制器，且基座溫度控制器可經配置以維持基座在第一溫度，同時側壁加熱元件可經配置以維持環形構件在第二溫度。在實施例中，第二溫度可大於第一溫度。
亦描述半導體腔室，半導體腔室可包含遠端電漿區域和與遠端電漿區域流體耦接的處理區域。在示例性的腔室中，處理區域可至少部分地藉由噴淋頭、基板支撐基座和側壁之每一者而界定，基板支撐基座包含第一材料。側壁可包含內側襯墊，內側襯墊包含與第一材料不同的第二材料，且側壁亦可包含鑲嵌於側壁中之電阻加熱器。在實施例中，基座可包含與桿件耦接的平台。此外，襯墊可被設置在側壁上從噴淋頭至在鄰近所耦接的平台和桿件之間之交叉處的一距離處。在實施例中，基座可包含溫度控制器，且溫度控制器可經配置以維持基板溫度至少低於由電阻加熱器所維持之側壁溫度20℃以下。此外，電阻加熱器可位於鄰近噴淋頭之側壁內。
亦描述蝕刻基板的方法，且方法可包含通過噴淋頭將電漿流出物輸送至半導體處理區域中。方法可包含以電漿流出物接觸駐留在支撐基座上的基板。支撐基座可包含第一材料，在實施例中，第一材料可為鋁，且支撐基座亦可包含與基座的遠端部分耦接的環形構件。在本技術的實施例中，環形構件可包含與第一材料不同的第二材料。方法亦可包含實質地維持環形構件在高於約50℃之溫度。另外，方法可包含在接觸操作期間維持處理區域實質地缺乏電漿。利用本技術的系統及方法，基板的邊緣蝕刻率可被維持在基板的中央蝕刻率之約5％或更少內。
此技術相較於傳統的系統和技術可提供許多好處。例如，邊緣蝕刻率可在是中央蝕刻率的小變化範圍內。額外的優點是此蝕刻操作的一致性可增加基板表面的可用面積。這些和其他實施例(與他們的許多優點和特徵)係與以下的實施方式和附隨的圖式結合而被更詳細地描述。
本技術包含用於半導體處理的系統和部件。處理腔室具有基於許多因素之特徵操作設定檔，因素包含操作條件、前驅物輸送和腔室配置。例如，輸送前驅物置基板處理區域之處理腔室可能不會均勻地將前驅物輸送至空間。前驅物可被從腔室的邊緣朝腔室的中央輸送，此可令基板的邊緣區域曝露至比基板的中央區域更多的前驅物成分。此外，前驅物可被從中央區域向外地輸送，此可令基板的中央區域暴露至比邊緣區域更多的前驅物成分。儘管有許多可被用以改善輸送的均勻性之腔室部件(包含氣體箱)，變化仍可存在於跨越處理腔室之剖面的前驅物輸送。
在蝕刻操作中，前驅物可被輸送到處理區域以與在基板上的材料相互作用，以移除這些材料。調整前驅物成分和處理條件可能影響何種材料及以何種比率蝕刻材料。這些成分可在電漿中被激發，以增加它們的化學反應性。在某些製程中，電漿被用以激發前驅物，但蝕刻操作本身本質仍是化學的。例如，當前驅物的電漿流出物通過如下所討論的離子抑制元件而輸送時，中性和自由基物種可被輸送到基板，但離子物種可被部分地或全部地被移除，以限制在蝕刻操作的任何電漿成分。故，蝕刻基於與在基板上的剩餘流出物化學相互作用而發生。
許多蝕刻操作利用氟或含氟前驅物以進行蝕刻操作。氟前驅物可在電漿中被激發，以產生可被輸送到基板上之材料並與基板上之材料化學反應的氟自由基，並隨後被移除，以圖案化基板材料。在某些腔室配置中，前驅物成分(包含電漿流出物)可從邊緣區域朝中央而被輸送到腔室的處理區域，此可令基板的邊緣區域比中央區域曝露至更多的前驅物成分。此前驅物成分可能接著令基板的邊緣區域比中央區域暴露至更多的反應性成分，此可能產生可能比中央蝕刻率更高的邊緣蝕刻率。這樣的一個例子係顯示於以下的第7A圖中，其中基板的邊緣區域基於腔室輸送機構而被曝露至額外的電漿流出物，此產生比中央區域優先蝕刻邊緣區域的蝕刻輪廓。
可利用某些製程條件以調整蝕刻輪廓。例如，腔室內的壓力可被調整或操縱，以影響電漿流出物輸送及/或流動至該處理區域中，藉此調整蝕刻輪廓。此外，藉由添加額外的前驅物(諸如氫)，蝕刻的均勻性輪廓可被進一步地調整。然而，當腔室條件被調整至影響流動型態時或當額外的前驅物被包含於化學作用中時，雖然均勻性輪廓可被調整，蝕刻率可能被不利地降低，或蝕刻操作的選擇性可能被影響。在某種程度上，所有這些調整可被進行，以藉由操作腔室中之前驅物的流動而影響與基板之中央區域相比邊緣區域曝露至氟的程度，但這些調整在以蝕刻率作為代價而進行，蝕刻率可能隨著每一修改而減少。然而，本技術沿基板之邊緣區域提供用於氟自由基之額外的再結合源，此允許邊緣蝕刻率與中央區域蝕刻率一致，而不減少製程的總蝕刻率。這將參照以下圖式而詳細地說明。
雖然其餘揭露書將照常地分辨利用所揭露的技術之具體蝕刻製程，將容易地理解系統和方法係同樣地適用於可能發生在所述的腔室中之沉積和清潔製程。故，此技術不應被視為是受限為僅用於蝕刻製程。
第 1 圖 顯示了根據實施例之沉積、蝕刻、烘烤及固化腔室的處理系統100之一個實施例的頂視平面圖。在圖式中，一對前開式晶圓傳送盒（FOUP）102供應各種尺寸的基板，基板係藉由機器手臂104而接收，且在被放置至位於串列區109a-c中的基板處理腔室108a-f之一者中之前被放置至低壓保持區106中。第二機器手臂110可被用以從保持區106傳輸基板晶圓至基板處理腔室108a-f並返回。每一基板處理腔室108a-f可經配備以進行多個基板處理操作，包含除了週期性層沉積（CLD）、原子層沉積（ALD）、化學氣相沉積（CVD）、物理氣相沉積（PVD）、蝕刻、預清潔、除氣、定向和其它基板製程以外的於此所述之乾蝕刻製程。
基板處理腔室108a-f可包含用於沉積、退火、固化及/或蝕刻在基板晶圓上的介電膜之一或多個系統部件。在一個配置中，兩對處理腔室(如，108c-d和108e-f)可被用以沉積介電材料於基板上，且第三對處理腔室(如，108a-b)，可被用以蝕刻所沉積的介電質。在另一配置中，所有的三對腔室(如，108a-f)可經配置以蝕刻在基板上的介電膜。所述的製程之任一者或多者可在與不同實施例中所示的製造系統分離的(多個)腔室中實施。將理解用於介電膜之沉積、蝕刻、退火和固化腔室的額外配置係藉由系統100而考慮。
第2A圖顯示在處理腔室內具有分區的電漿產生區域之示例性製程腔室系統200的剖視圖。於膜蝕刻(如，氮化鈦、氮化鉭、鎢、矽、多晶矽、氧化矽、氮化矽、氧氮化矽、氧碳化矽等等)期間，製程氣體可以通過氣體入口組件205而被流至第一電漿區域215中。遠端電漿系統(RPS)201可選擇地被包含在系統中，且可處理接著行進通過氣體入口組件205的第一氣體。入口組件205可包含兩或更多個不同的氣體供應通道，其中第二通道(圖未示)可繞過RPS 201(若有包含的話)。
冷卻板203、面板217、離子抑制器223、噴淋頭225及具有基板255設置於上的基座265被顯示且可根據實施例而各被包含在內。基座265可具有熱交換通道，熱交換流體通過熱交換通道，以控制基板的溫度，熱交換通道可被操作以在處理操作期間加熱及/或冷卻基板 或晶圓。基座265(可包括鋁、陶瓷或它們的組合)之晶圓支撐盤亦可使用嵌入式電阻加熱器元件而被電阻式加熱，以達到相對高的溫度(諸如從高達或約100℃到1100℃以上或約1100℃)。
面板217可為金字塔形的、圓錐形的，或具有狹窄的頂端部分擴大成寬廣的底端部分之另一種類似的結構。面板217可額外地如圖所示般為平的，且包含用以分配製程氣體之複數個穿通通道。電漿產生的氣體及/或電漿激發的物種，取決於RPS 201的使用，可穿過在面板217中之複數個孔(在第2B圖中所示)，以更均勻地輸送至第一電漿區域215。
示例性的配置可包含具有氣體入口組件205打開至藉由面板217而與第一電漿區域215分區的氣體供給區域258中，使得氣體/物種通過在面板217中之孔而流入第一電漿區域215。結構的和操作的特徵可經選擇以防止電漿的大量回流從第一電漿區域215返回至供應區域258、氣體入口組件205和流體供應系統210。面板217(或腔室的導電頂端部分)和噴淋頭225被顯示具有絕緣環220位於這些特徵之間，此允許AC電位相對於噴淋頭225及/或離子抑制器223而被施加到面板217。絕緣環220可被定位在面板217和噴淋頭225及/或離子抑制器223之間，使得電容耦合電漿(CCP)被形成在第一電漿區域中。隔板(圖未示)可額外地被置於第一電漿區域215中，或以其它方式與氣體入口組件205耦接，以影響流體通過氣體入口組件205流至區域中。
離子抑制器223可包括界定複數個孔貫穿結構之板或其它幾何形狀，該結構經配置以抑制離子性帶電物質遷移出電漿激發區域215，同時允許未帶電的中性或自由基物種通過離子抑制器223至抑制器和噴淋頭之間的活化氣體輸送區域中。在實施例中，離子抑制器223可包括具有各種孔配置之穿孔板。這些未帶電的物種可包含高度反應性的物種，高度反應性的物種與較低反應性的載氣通過孔洞而傳送。如上所述，通過孔的離子物種的遷移可被降低，且在某些情況下被完全地抑制。控制離子物質通過離子抑制器223的數量可有利地提供對於被引入與下方的晶圓基板接觸的氣體混合物之增加的控制，此接著可增加對氣體混合物之沉積及/或蝕刻特性的控制。例如，對氣體混合物之離子濃度的調整可顯著地改變氣體混合物的蝕刻選擇性，如，SiNx：SiOx的蝕刻率、Si：SiOx的蝕刻率等等。在沉積被實施的替代實施例中，它也可改變介電材料的適配對可流動類型的沉積之平衡。
在離子抑制器223中之複數個孔可經配置以控制活化氣體(亦即，離子、自由基及/或中性物種)通過離子抑制器223。例如，孔的深寬比(或孔的直徑比長度)及/或孔的幾何形狀可經控制，使得在活化氣體中的離子性帶電物質通過離子抑制器223的流量被減少。在離子抑制器223中的孔可包含面向電漿激發區域215之圓錐形部分，和面向噴淋頭225的圓柱形部分。圓柱形部分可經調整形狀和尺寸，以控制通往噴淋頭225之離子物種的流量。可調整的電偏壓也可作為附加手段而被施加到離子抑制器223，以控制離子物種通過抑制器的流量。
離子抑制器223可作用以減少或消除從電漿產生區域行進到基板之離子帶電物種的量。未帶電的中性和自由基物種仍可通過在離子抑制氣中之開口，以與基板反應。應注意完全消除在圍繞基板之反應區域中的離子帶電物種可能無法在實施例中執行。在某些情況中，離子物種係傾向到達基板，以執行蝕刻及/或沉積製程。在這些情況中，離子抑制器可幫助控制在反應區中之離子物種的濃度於輔助製程的等級。
噴淋頭225與離子抑制器223結合可允許存在於腔室電漿區域215中的電漿，以避免在基板處理區域233中直接激發氣體，同時仍然允許所激發的物種從腔室電漿區域215行進到基板處理區域233。以此方式，腔室可經配置以阻止電漿接觸被蝕刻的基板255。這可以有利地保護圖案化在基板上之各種複雜的結構和膜，若這些結構和膜被所產生的電漿直接接觸，這些結構和膜這可能被損壞、被錯位或以其它方式變形。此外，當電漿被允許接觸基板或接近基板的高度時，氧化物物種蝕刻的比率可能增加。故，若材料的暴露區域被氧化，此材料可藉由將電漿維持遠離基板而被進一步地保護。
處理系統可進一步包含功率供應器240，功率供應器240係與處理腔室電耦接，以提供電功率給面板217、離子抑制器223、噴淋頭225及/或基座265，以在第一電漿區域215或處理區域233產生電漿。功率供應器可經配置以根據所執行的製程而輸送可調整的功率量至腔室。此配置可允許在正執行的製程中使用可調的電漿。不像遠端電漿單元(遠端電漿單元係經常呈現有開啟或關閉的功能)，可調的電漿可經配置以提供輸送特定的功率量至電漿區域215。此依次可允許特定電漿特性的發展，使得前驅物可以特定的方式而被解離，以強化由這些前驅物所產生的蝕刻輪廓。
電漿可在噴淋頭225上方之腔室電漿區域215或噴淋頭225下方之基板處理區域233任一者中被點燃。電漿可存在於腔室電漿區域215，以從流入物(例如，含氟前驅物或其它前驅物)產生自由基前驅物。通常是在射頻（RF）範圍中之AC電壓可被施加於處理腔室的導電頂端部分(諸如面板217)和噴淋頭225及/或離子抑制器223之間，以於沉積期間在腔室電漿區域215 中點燃電漿。RF功率供應器可產生13.56 MHz的高RF頻率，但也可單獨地或與13.56 MHz的頻率結合產生其它頻率。
第2B圖顯示影響通過面板217的處理氣體分佈之特徵的詳細圖式253。如第2A和2B圖中所示，面板217、冷卻板203和氣體入口組件205相交以限定氣體供應區域258，製程氣體可從氣體入口205而被輸送至氣體供應區域258中。氣體可填充氣體供應區域258並通過在面板217的孔洞259而流至第一電漿區域215。孔洞259可經配置而以實質上單向的方式導引流動，使得製程氣體可流至處理區域233中，但可在穿過面板217之後部分地或完全地防止回流至氣體供應區域258中。
用於在處理腔室區域200使用之氣體分佈組件(諸如噴淋頭225)可被稱為雙通道噴淋頭（DCSH），且氣體分佈組件在第3圖和第4圖中所描述的實施例中被於此另外地詳細說明。雙通道噴淋頭可提供用於允許在處理區域233的外側分離蝕刻劑之蝕刻製程，以在被輸送至處理區域中之前，提供與腔室部件和彼此有限的相互作用。
噴淋頭225可包括上板214和下板216。這些板可彼此耦接以界定於這些板之間的容積218。板的耦接可以提供通過上板和下板的第一流體通道219，和通過下板216的第二流體通道221。所形成的通道可經配置以提供單獨經由第二流體通道221而通過下板216從容積218的流體存取，且第一流體通道219可與在這些板和第二流體通道221之間的容積218流體地隔離。容積218可通過氣體分佈組件225的側面而被流體地存取。
第3圖根據實施例之用於與處理腔室使用的噴淋頭325之底視圖。噴淋頭325對應於在第2A圖中所示的噴淋頭。穿孔365(顯示第一流體通道219的圖式)可具有複數個形狀和配置，以控制和影響通過噴淋頭225之前驅物的流動。小孔375(顯示第二流體通道221的圖式)可實質均勻地分佈在噴淋頭的表面上，甚至在穿孔365之間，且當前驅物離開噴淋頭時，小孔375可幫助提供比其他配置更均勻的前驅物混合。
根據實施例之用於面板的配置係顯示於第4圖。如圖所示，面板400可包括穿孔板或歧管。面板的組件可類似於如第3圖中所示之噴淋頭，或可包含為前驅氣體之分佈模式而專門地配置的設計。面板400可包含以各種配置定位在示例性處理腔室(諸如第2圖中所示之腔室)內的環形框架410。在框架上或框架內可耦接有板420，板420可類似於在實施例中如前所述之離子抑制器223。在實施例中，面板400可為單件式設計，其中框架410和板420是單件的材料。
板可具有圓盤形狀且安置於框架410上或框架410內。板可為導電材料(諸如包含鋁之金屬)，和允許板作為電極以在先前所述之電漿配置中使用的其他導電材料。板可具有各種厚度，且可包含界定於板內之複數個孔洞465。如第4圖中所示之示例性配置可包含如前所述與第3圖中之配置相關的圖案，且可包含在幾何圖案(諸如如圖示的六角形)中的一系列的孔洞環。如將被理解的，所示的圖案是示例性的，且應理解，各種圖案、孔配置和孔間距係都包含在設計中。
孔洞465可經調整尺寸或經其它方式配置以允許於操作期間流體被流經孔洞。在各種實施例中，孔可經調整尺寸小於約2英寸，且可以小於1.5英寸或約1.5英寸、約1英寸、約0.9英寸、約0.8英寸、約0.75英寸、約0.7英寸、約0.65英寸、約0.6英寸、約0.55英寸、約0.5英寸、約0.45英寸、約0.4英寸、約0.35英寸、約0.3英寸、約0.25英寸、約0.2英寸、約0.15英寸、約0.1英寸、約0.05英寸等等，或更少。
轉到第5圖，其係顯示沿第2A圖中所示之線A-A的剖視圖。此剖視圖顯示包含噴淋頭525(與第2A圖中之噴淋頭225相關)之底部的腔室500的一部分，和基座565(與第2A圖中之基座265相關)。腔室可包含如前所述之部件的一些或全部。圖式還包含腔室之側壁521、522的一部分，可連同噴淋頭525和基座565而幫助界定基板處理區域533。雖然未顯示在圖式中，在如前所述的噴淋頭及/或離子抑制板的上方可為遠端電漿區域，諸如如前所述的區域215或RPS 201。
處理區域533可與遠端電漿區域流體耦接，且可通過噴淋頭525而接收輸送至處理區域的電漿流出物。處理區域可經配置以容納基板於支撐基座565(諸如支撐盤567)上。支持基座565(且更具體地為支持盤567)可包含如圖所示的內側區域568和外側區域569。外側區域569可包含遠離桿件570，或鄰近腔室的側壁522、521的任何區域。支撐基座565(可包含支撐盤567和桿件570兩者)可包含第一材料或由第一材料所組成。基座部件可包含鋁、陶瓷，或在半導體處理設備中是有用的任意數目的材料。基座的內側區域568可包含第一材料或亦由第一材料所組成。
支撐基座亦可包含如圖所示與基座的遠端部分耦接的，或在外側區域569處之環形構件505。環形構件可包含第二材料或由第二材料所組成，第二材料與第一材料不同。雖然稱為環形，環形構件505可基於基座565或支撐盤567的幾何形狀而採取任何數量的形式。例如，若支撐盤是方形的設計，是環形構件505亦可為方型的設計，且任何種類的幾何形狀應被理解為由本技術所包含。環形構件505可與任何數量的直接或間接的方式而與基座565耦接，包含如將被理解的焊接、緊固、螺栓等等。在實施例中，環形構件可包含一或多個凸耳或凸脊，以使與基座565的耦接更牢固。
環形構件可由第二材料所製成，且也可由以第二材料電鍍於第一材料上或之上的第一材料所製成。第二材料可被完全地鍍在環形構件的所有表面上，或在實施例中可不被設置在與支撐基座接觸的環形構件之表面上。例如，環形構件505的外側區域507可包含第二材料，但與基座565接觸的內側區域508可不包含第二材料。在此配置中，可提供一些益處，包含於操作期間較小的彎曲可能性，及沿基座565的外側區域569維持更均勻的溫度輪廓的能力。
在所揭露的實施例中，環形構件可如由虛線510所示沿基座的外側區域569，或沿外邊緣，朝向桿件570延伸。藉由沿基座之外側表面或區域延伸環形構件，可提供更多的第二材料的表面面積給輸送至處理區域533的前驅物及/或電漿流出物作相互作用。當基板被設置在支撐盤567上時，基板可朝外側區域569延伸，且可接觸環形構件505或可能不接觸環形構件505。例如，環形構件可在超過置中的基板區域(諸如內側區域568)的大小之邊緣區域處與支撐基座耦接。例如，直徑為300 mm的基板可專門地駐留在內側區域568內，且接近但未接觸環形構件505。應理解任何基板尺寸可基於腔室配置而利用，且包含維持所討論的益處之對本系統的調整(諸如在較大的或較小的基座上之較大的或較小的基板)，其中不管尺寸，環形構件是不與基板接觸。
不意欲受任何特定的理論所限制，討論可能的或所包含的機構可能是有用的。如先前所討論的，許多蝕刻操作利用氟或含氟前驅物，以與在基板上之材料，或與基板本身相互作用。氟前驅物可如先前所討論的在電漿中被激發，且電漿流出物可被提供至處理腔室用以接觸基板或在基板上的材料及/或與基板或在基板上的材料相互作用。因為前驅物或電漿流出物的流動輪廓，基板的外側，或鄰近腔室之外區域的邊緣區域可被暴露於額外的蝕刻劑材料。然而，氟或氟化物自由基可包含朝向金屬表面的親合性，此可致使對氟氣體的再結合。雖然氟化物自由基可是高反應性的，以進行化學蝕刻，再結合的氟氣體可能不是反應性的，或可能是低反應性的，且可被泵出處理區域，以不與基板相互作用。
例如，環形構件，或環形構件的第二材料可基於氟對材料的親合性而選擇。因為許多腔室部件可為相同的材料或第一材料(諸如鋁)，第二材料可基於相對於第一材料的性質而選擇。例如，氟具有對鋁的一定親合性。氟具有對其它金屬(例如，包含鎳或鉑)更高的親合性。故，第二材料可為氟具有比第一材料更高的親合性的材料。以此方式，在腔室中之特定量的氟化物自由基可自然地朝第二材料流動。當在區域中之自由基的數量增加及/或自由基物種與第二材料關聯時，氟化物自由基可彼此再結合或與其他通過的自由基物種再結合，以產生可從系統中移除的氟或氟化氣體。此可接著減少在腔室的邊緣區域中或沿著基板的邊緣區域之氟化物自由基的濃度，此可以按比例地減少沿著基板的邊緣區域的蝕刻率。
故，藉由包含對氟具有較高親合性的第二材料於鄰近基座上之基板的邊緣區域之環形構件中，第二材料可幫助降低沿著邊緣區域之蝕刻率。此外，此調整可不影響或可最小地影響中央基板區域的蝕刻率。因此，當藉由減少邊緣蝕刻率而可維持所欲的整體蝕刻率時，整體蝕刻製程可導致跨越基板的整個表面之相對的或實質的均勻性。
在系統及/或腔室部件內的額外的調整可進一步地幫助此效果。這些調整可與材料選擇一起作出，但可能不被包含在所有實施例中。例如，環形構件505可垂直地延伸於支撐基座565之上表面的上方。如圖所示，支撐盤567可包含上表面，或基板可經配置以駐留在上的表面。環形構件505可經配置以位於上表面之上方，或在基板的高度之上方的高度處。此修改可影響所輸送的前驅物或電漿流出物之流動輪廓，此可降低在基板之邊緣區域處的相互作用，或提供增加的用於允許氟化物自由基再結合之相互作用的區域。
溫度也可影響氟對第一和第二材料之親合性。例如，較低的操作溫度會降低金屬或其它材料之間的親合性差異，此可降低本技術的影響。然而，許多處理操作可以將基板維持在相對低的溫度而進行。該技術的額外態樣可允許親合性差異被重新恢復。
在所揭露的實施例中，蝕刻製程可以高於50℃、80℃、100℃、150℃等等之溫度，或在約50℃、80℃、100℃、150℃等等之溫度而進行，使得可不使用該技術的額外態樣。所揭露的實施例也可在低於100℃、80℃、50℃、35℃、10℃等等之溫度，或在約100℃、80℃、50℃、35℃、10℃等等之溫度而進行，此可影響在第一材料和第二材料之間的親合性差異。本技術的一或多個態樣可被併入於環形構件中，或用以取代環形構件，以恢復親合性差異。
如5圖中所示，處理區域533可至少部分藉由側壁521、522而界定。側壁可包含第二材料，及/或可包含在所揭露的實施例中之加熱元件。如圖所示，加熱元件520可被包含於或嵌入在側壁521中。加熱器可位於側壁的任何部分，且在實施例中可被包含於鄰近噴淋頭525。加熱器可經配置以加熱環形構件505之第二材料，同時限制對支撐基座565或駐留在基座上的基板的影響。如先前所討論的，支撐基座可包含基座的溫度控制器(諸如流體通道或嵌入式加熱器574)，以於操作期間加熱或冷卻基板。溫度控制器574被顯示為在第5圖中的通道，但應理解為包含各種控制器，包含電阻加熱元件，以及包含複數個通道、線圈等等的各種通道配置。
在具有加熱元件520的實施例中，基座的溫度控制器可經配置以保持基座於第一溫度，同時側壁加熱元件520可經配置以保持環形構件於第二溫度。例如，在實施例中，第二溫度可大於第一溫度。各種溫度效應可被包含以調整與第一材料相關的第二材料的氟親合性。例如，第一溫度可為約200℃、150℃、100℃、80℃、50℃、35℃、10℃、-10℃等等或低於200℃、150℃、100℃、80℃、50℃、35℃、10℃、-10℃等等。第二溫度可為約40℃、50℃、80℃、100℃、150℃、200℃等等，或高於40℃、50℃、80℃、100℃、150℃、200℃等等，使得環形構件的第二材料和基座的內側區域之間的溫度差568可為約10℃、20℃、30℃、40℃、50℃、60℃、80℃、100℃、150℃，等等，或更高，或高於10℃、20℃、30℃、40℃、50℃、60℃、80℃、100℃、150℃等等，或更高。藉由調整溫度差，親合影響可被調整以產生對邊緣蝕刻率的特定調整，以標準化跨越基板表面的蝕刻率。
加熱元件520可位於側壁515內，以最大化或增加加熱元件之操作效率，或在環形構件的第二材料上最大化加熱元件之效果。在實施例中，加熱元件520可被包含在鄰近噴淋頭525處，如在約1英寸或更小、0.5英寸或更小、0.05英寸或更小、0.01英寸或更小等等內。藉由提供加熱元件於噴淋頭附近，藉由其他側壁或腔室部件(諸如側壁522)所吸收的能量之數量可被降低，且提供到環形構件505之第二材料的能量的數量可被提高。
例如，實施例還可包含如第2A和5圖中所示之遠端電漿區域和半導體處理區域。處理區域可與遠端電漿區域流體耦接，且可藉由噴淋頭525、基板支撐基座565、側壁或側壁區域521之每一者而被至少部分地界定，基板支撐基座565可包含如先前所討論的第一材料。在實施例中，側壁區域521可與額外的側壁區域522耦接，側壁區域521與額外的側壁區域522不同。側壁521可包含內側襯墊，內側襯墊與包含第一材料不同之第二材料(諸如，例如，鎳或鉑作為第二材料，且鋁作為第一材料)。襯墊可位於側壁區域的一部分或全部上，且可位於內側腔室表面(諸如至少部分地界定腔室處理區域之表面)。然而，應理解可利用不同的第一材料，且第二材料可基於對第一材料之氟的親合性，而第二材料可基於比第一材料更高的氟的親合性來選擇。因此，可使用任何數量的材料用於第一和第二材料，且可被本技術所包含。
側壁521可包含第二材料或由第二材料組成，或在實施例中，側壁可以包含內側襯墊515，內側襯墊515包含第二材料。腔室還可包含電阻加熱器(諸如嵌入側壁521中之加熱元件520)。如先前所討論的，電阻加熱器可被包含或位於鄰近噴淋頭之側壁內。襯墊515可沿著腔室處理區域的任何部分而被包含，且可能繞腔室內側而周向地延伸，諸如沿著側壁521。襯墊也以相對於支撐基座，或相對於在處理操作期間支撐基座可能被定位處而被包含。例如，基座565可包含與桿件570耦接之平台567，桿件570在操作期間被移動以定位平台567(基板可被置於平台567上)在相對於噴淋頭525一定距離內，或離噴淋頭525一定距離內。
當平台位於平台之操作位置時(諸如於蝕刻製程期間)，襯墊515可被設置在側壁上，從噴淋頭垂直地沿著側壁521至鄰近與所耦接的平台567和桿件570之間的交叉處的一距離。許多基座是朝噴淋頭或從噴淋頭可垂直地移動的，且在操作期間可被移動靠近噴淋頭，雖然於任何製程期間距離可以更大，更小，或可被調整。例如，基座可在較低的位置，以更容易地接收輸送至腔室中的基板，且接著朝噴淋頭升高用以處理。如第5圖中所示，當基座係位於基座用於處理基板的位置時，襯墊515可沿著側壁521而位於從與噴淋頭525或可令噴淋頭與側壁絕緣之介電質（圖未示）的交叉處至靠近、位於或低於平台567與桿件570交叉處之一距離處。
在實施例中，包含第二材料之襯墊可以類似環形構件505的方式而操作，且可與環形構件結合使用，或代替環形構件。基座還可包含溫度控制器(諸如流體通道574)以控制基板的溫度。溫度控制器可經配置以保持在平台567上的基板在至少約20℃，或較低於由電阻加熱器520所維持之側壁521之溫度的溫度。在操作中，襯墊可以吸引氟化物，氟化物可具有對第二材料的親和性，此可允許再結合成氟或氟化氣體，並減少如前所述的邊緣蝕刻率，以提供跨越基板之表面的更均勻的蝕刻率。此外，藉由包含第二材料在襯墊中，第二材料的溫度可比環形構件被更容易地控制，環形構件可具有受加熱元件520以及基座的溫度控制器兩者所影響的溫度。
先前關於第2A和5圖中所描述的部件而討論的腔室，可被用以執行多個製程或操作，包含基板蝕刻操作。轉到第6圖，其係顯示一種用於蝕刻基板之此方法600。方法可包含提供基板到腔室，及執行亦可發生在腔室內的任何預處理操作。在操作610處，電漿流出物可通過噴淋頭而被輸送到半導體處理區域。駐留在支撐基座上的基板可在操作620處與電漿流出物接觸。基板支撐基座可包含第一材料，且還可包含與基座的遠端部分耦接的環形構件。環形構件還可包含如先前所描述的與第一材料不同的第二材料。操作630可包含保持環形構件在第一溫度，在實施例中，環形構件可包含高於約50℃的溫度。此可以任何數量的方式而被執行，包含若自然製程溫度係高於約50℃，或藉由利用如前所討論的任何數量的加熱機構。可選地，操作640可包含基於用於蝕刻之製程條件而保持基板溫度在第二溫度，且第二溫度可低於或約150℃。應理解操作亦可以如先前所討論的任何其他的溫度或範圍下進行。
額外的或替代的方法可包含利用具有如前所述的與腔室側壁相關之襯墊，和鑲嵌在側壁內之加熱源件的腔室。方法可被執行以利用化學反應而不是在基板上之直接的電漿作用。例如，腔室處理區域在接觸操作620期間可為實質上沒有電漿的。這可藉由如先前所述的利用遠端電漿，並將電漿流出物輸送至處理區域中而發生。
方法可允許更均勻的蝕刻跨越基板的表面而執行，如第7A和7B圖之數據圖所示。第7A圖顯示300 mm晶圓在處理腔室中，無本技術之環形環或側壁襯墊的蝕刻操作。如圖所示，沿晶圓的外部區域，由X軸所示，蝕刻率大大地增加，產生跨越表面的不均勻蝕刻。然而，第7B圖包含環形構件(諸如先前所描述的)，環形構件允許跨越基板之表面的均勻蝕刻率。額外的結果可以襯墊及/或加熱元件結合或取代環形構件而實現。藉由所揭露的技術，基板的邊緣蝕刻率可被保持在基板的內側或中央區的刻蝕率之約+/-10％或低於+/-10％內，且可維持在中央蝕刻率的約+/-7％、5％、3％、1％等等或低於+/-7％、5％、3％、1％等等內。此外，相對於許多可幫助減輕邊緣蝕刻率的問題，但亦可能不利地抑制中央區域的蝕刻率之處理操作改變(這可能增加佇列時間、前驅物消耗及延長操作的操作成本)，中央蝕刻率可被保持在所欲的比率，且可藉由本技術而可不被抑制。
在前面的實施方式中，為解釋的目的，許多的細節已被提出，以提供本技術之各種實施例的理解。然而，對熟悉該技術者而言，一些實施方式可不需這些細節的一些，或可具有額外的細節而實施將是明顯的。
已經揭露幾個實施例，對熟悉該技術者而言，將可理解各種的修改、替代構造和等效元件可被使用而不背離實施例的精神。此外，一些已知的製程和元件並未被說明，以避免不必要地模糊本技術。故，以上的實施方式不應被視為限制本技術的範圍。此外，方法或製程可依序或依步驟而說明，但應理解操作可同時地執行，或相較於所列出的順序，以不同的順序而執行。
當提供一數值範圍時，除非上下文另有明確地說明，應理解在範圍的上限和下限之間之每個中間值(直到下限之單位的最小分數)亦被具體地揭露。在指定的範圍中之任何指定的數值或未指定的中間值及在指定的範圍中之任何其他指定的數值或中間值之間的較窄範圍被涵蓋。這些較小範圍的上限和下限可獨立地被包含或排除在範圍中，且每一範圍(其中包含在較小範圍中的上限和下限之任一者、未包含在較小範圍中的上限或下限，或包含在較小範圍中的上限和下限之兩者)係亦涵蓋於技術內，受到在指定的範圍中任何具體排除的限制。當範圍包含上限和下限之一者或兩者時，排除這些所包含的上限或下限之一者或兩者的範圍亦被包含。
當於此和所附隨的申請專利範圍中所使用時，單數形式「一」、「一個」及「該」包含複數的關係，除非上下文另有明確說明。因此，例如，關於「一孔」係包含複數個此種孔，且關於「該板」係包含與一或多個板和對熟悉該技術領域者而言已知的等效元件等等有關。
此外，當在此說明書和以下的申請專利範圍中使用時，用詞「包括(comprises(s)、comprising)」、「含有(contain(s)、containing)」、和「包含(include(s)、including)」係意欲具體指明所指定的特徵、整體、部件或操作的存在，但它們不排除一或多個其它特徵、整體、部件、操作、動作或群組的存在或增加。
100:系統 102:前開式晶圓傳送盒 104:機器手臂 106:保持區 108a-f:基板處理腔室
109a-c:串列區
110:機器手臂
200:製程腔室系統/處理腔室區域
201:遠端電漿系統/RPS單元
203:冷卻板
205:入口組件
210:流體供應系統
214:上板
215:區域
216:下板
217:面板
218:容積
219:第一流體通道
220:絕緣環
221:第二流體通道
223:離子抑制器/離子抑制板
225:噴淋頭
233:處理區域
240:功率供應器
253:詳細圖式
255:基板
258:氣體供給區域
259:孔洞
265:基座
325:噴淋頭 365:穿孔 375:小孔 400:面板 410:框架 420:板 465:孔洞 500:腔室 505:環形構件 507:外側區域 508:內側區域 510:虛線 515:側壁/內側襯墊 520:加熱元件/電阻加熱器 521:腔室/側壁/側壁區域 522:腔室/側壁/側壁區域 525:噴淋頭 533:基板處理區域 565:基座 567:支撐盤 568:內側區域/基座 569:外側區域 570:桿件 574:加熱器 600:方法 610:操作 620:操作 630:操作 640:操作
所揭露的技術之本質和優點的進一步理解可藉由參照說明書和圖式的其餘部分而體會。
第1圖顯示示例性處理系統的一個實施例之頂視平面圖。
第2A圖顯示示例性處理腔室的概要剖視圖。
第2B圖顯示在第2A圖中所示的處理腔室的一部分的詳細圖
第3圖顯示根據所公開的技術之示例性噴淋頭的底部平面圖。
第4圖顯示根據所公開的技術之示例性面板的平面圖。
第5圖顯示根據所公開的技術之實施例在第2A圖中沿線A-A所示之處理腔室的一部分的概要剖視圖。
第6圖顯示根據本技術的實施例之蝕刻基材的方法之流程圖。
第7A-7B圖顯示收集有根據本技術之改良蝕刻率數據及未收集有根據本技術之改良蝕刻率數據。
包含有一些圖式作為概要圖式。應理解圖式係用於說明的目的，且不考慮尺寸，除非具體地聲明是這樣。
在附隨的圖式中，類似的部件及/或特徵可具有相同的元件符號。此外，相同類型的各種部件可藉由在元件符號之後加上區分這些類似部件之間的字母而區分。若僅第一元件符號被使用於說明書中，說明係可適用於具有相同第一元件符號的類似部件的任一者，而與字母無關。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
100:系統
102:前開式晶圓傳送盒
104:機器手臂
106:保持區
108a-f:基板處理腔室
109a-c:串列區
110:機器手臂

Claims (17)

  1. 一種蝕刻一基板的方法，包括以下步驟：形成一含氟前驅物之電漿流出物；將該電漿流出物通過一噴淋頭輸送至一半導體處理區域；使該電漿流出物接觸駐留在一支撐基座上之一基板，其中該支撐基座包含第一材料，其中該支撐基座包含與該支撐基座的遠端部分耦接之一環形構件，且其中該環形構件包含與該第一材料不同之第二材料；以及實質地維持該環形構件在高於約50℃之溫度。
  2. 如請求項1所述之方法，其中基板的邊緣蝕刻率為基板的中央蝕刻率的約5%之內。
  3. 如請求項1所述之方法，其中在接觸操作期間，該半導體處理區域實質上沒有電漿。
  4. 如請求項1所述之方法，其中該環形構件包括鍍有該第二材料之第一材料。
  5. 如請求項1所述之方法，其中該第二材料包括鎳或鉑。
  6. 如請求項1所述之方法，其中基板係為該電漿流出物所蝕刻。
  7. 一種蝕刻一基板的方法，包括以下步驟：形成一含氟前驅物之電漿流出物； 將該電漿流出物通過一噴淋頭輸送至一半導體處理區域；使該電漿流出物接觸駐留在一支撐基座上之一基板，其中該支撐基座包含第一材料，其中該半導體處理區域之一側壁包含一襯墊，該襯墊係位於一內側腔室表面上，且該襯墊包括與該第一材料不同的第二材料；以及蝕刻該基板。
  8. 如請求項7所述之方法，其中基板的邊緣蝕刻率為基板的中央蝕刻率的約5%之內。
  9. 如請求項7所述之方法，其中在接觸操作期間，該半導體處理區域實質上沒有電漿。
  10. 如請求項7所述之方法，其中該襯墊包括鍍有該第二材料之第一材料。
  11. 如請求項7所述之方法，其中該第二材料包括鎳或鉑。
  12. 一種蝕刻一基板的方法，包括以下步驟：形成一含氟前驅物之電漿流出物；將該電漿流出物輸送至一半導體處理區域，其中一或更多個構件包含鎳；使該電漿流出物接觸駐留在一支撐基座上之一基板；以及 蝕刻該基板。
  13. 如請求項12所述之方法，其中包含鎳之該一或更多個構件為該支撐基座上之一邊緣環，或位於該半導體處理區域內之一襯墊。
  14. 如請求項12所述之方法，其中將該基板維持在高於50℃或約50℃之溫度。
  15. 如請求項12所述之方法，其中該支撐基座包含與該支撐基座的遠端部分耦接之一環形構件，且其中該環形構件包含鎳。
  16. 如請求項15所述之方法，其中該環形構件包含鍍有鎳之鋁。
  17. 如請求項12所述之方法，其中該半導體處理區域之一側壁包含一襯墊，該襯墊係位於一內側腔室表面上，且該襯墊包含鎳。
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