CN107004560B - 增进工艺均匀性的方法及系统 - Google Patents

增进工艺均匀性的方法及系统 Download PDF

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CN107004560B
CN107004560B CN201580064178.5A CN201580064178A CN107004560B CN 107004560 B CN107004560 B CN 107004560B CN 201580064178 A CN201580064178 A CN 201580064178A CN 107004560 B CN107004560 B CN 107004560B
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S·辛格
A·曹
张景春
李子汇
张汉申
D·卢博米尔斯基
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Applied Materials Inc
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Abstract

半导体处理腔室可包含远程等离子体区域，及与远程等离子体区域流体耦接的处理区域。处理区域可被配置为在支撑基座上容纳基板。支撑基座可包含在基座的内侧区域处的第一材料。支撑基座也可包含与基座的远程部分耦接的或在基座的外侧区域处的环形构件。环形构件可包含与第一材料不同的第二材料。

Description

增进工艺均匀性的方法及系统
技术领域
本技术涉及半导体工艺和设备。更具体地，本技术涉及在蚀刻操作期间改善工艺的均匀性。
背景技术
集成电路可以通过在基板表面上产生具有复杂图案的材料层的工艺而制成。在基板上产生具有图案的材料需要受控的方法来移除暴露的材料。相同的程序可在多个基板上进行，且工艺条件和结果通常保持在严格的公差范围内。通常当蚀刻或移除操作被执行时，跨越基板的均匀性难以保持。
在很多情况中，基于腔室配置或工艺条件，移除操作的均匀性保持可能难以控制。虽然工艺条件可被调整，工艺条件的公差可能限制可修改的量或程度。由于此原因，均匀性仅能通过工艺条件而被控制在有限的程度。
因此，存在对于改良的系统部件的需求，该系统部件可允许跨越从中央区域至边缘区域的基板的整个表面的改善的工艺条件的均匀性。这些和其他需求通过本技术而解决。
发明内容
描述用于改善工艺均匀性的方法和系统，且示例性的半导体处理腔室可包含远程等离子体区域，及与远程等离子体区域流体耦接的处理区域。处理区域可被配置为在支撑基座上容纳基板。支撑基座可包含在基座的内侧区域的第一材料。支撑基座也可包含与基座的远程部分耦接的或在基座的外侧区域处的环形构件。环形构件可包含与第一材料不同的第二材料。
环形构件可包含镀有第二材料的第一材料，且在实施例中，第二材料可不被设置在与支撑基座接触的环形构件的表面上。环形构件可沿基座的外部边缘朝基座的杆件区域而延伸。支撑基座可包含上表面，且环形构件可垂直地延伸于在实施例中的支撑基座的上表面之上。环形构件可在超过置中的基板区域的大小的边缘区域处与支撑基座耦接。在实施例中，相较于第一材料而言，氟对第二材料可具有较高的亲合性，且第二材料可包含镍或铂。处理区域可通过侧壁而至少部分地被界定，且在实施例中，侧壁可包含第二材料。此外，侧壁加热组件可被镶嵌在邻近喷淋头的侧壁中。支撑基座也可包含基座温度控制器，且基座温度控制器可被配置为将基座保持在第一温度，同时侧壁加热组件可被配置为将环形构件保持在第二温度。在实施例中，第二温度可大于第一温度。
也描述了半导体腔室，半导体腔室可包含远程等离子体区域和与远程等离子体区域流体耦接的处理区域。在示例性的腔室中，处理区域可由喷淋头、基板支撑基座和侧壁的每一者而至少部分地被界定，基板支撑基座包含第一材料。侧壁可包含内侧衬垫，内侧衬垫包含与第一材料不同的第二材料，且侧壁也可包含镶嵌于侧壁中的电阻加热器。在实施例中，基座可包含与杆件耦接的平台。此外，衬垫可被设置在侧壁上从喷淋头至在邻近所耦接的平台和杆件之间的交叉处的一距离处。在实施例中，基座可包含温度控制器，且温度控制器可被配置为将基板温度保持在至少低于由电阻加热器所保持的侧壁温度20℃以下。此外，电阻加热器可位于邻近喷淋头的侧壁内。
也描述了蚀刻基板的方法，方法可包括通过喷淋头将等离子体流出物输送至半导体处理区域中。方法可包括用等离子体流出物接触驻留在支撑基座上的基板。支撑基座可包含第一材料，在实施例中，第一材料可以是铝，且支撑基座也可包含与基座的远程部分耦接的环形构件。在本技术的实施例中，环形构件可包含与第一材料不同的第二材料。方法也可包括将环形构件基本保持在高于约50℃的温度。另外，方法可包含在接触操作期间将处理区域基本保持缺乏等离子体。利用本技术的系统及方法，基板的边缘蚀刻率可被保持在基板的中央蚀刻率的约5％或更少以内。
此技术相较于传统的系统和技术可提供多个好处。例如，边缘蚀刻率可在是中央蚀刻率的小变化范围内。额外的优点是此蚀刻操作的一致性可增加基板表面的可用面积。这些和其他实施例(与他们的多个优点和特征)是与以下的实施例与附图结合而被更详细地描述。
附图说明
所公开的技术的本质和优点的进一步理解可通过参照其余部分的说明书和附图来体会。
图1示出示例性处理系统的一个实施例的顶视平面图。
图2A示出示例性处理腔室的概要剖视图。
图2B示出在图2A中所示的处理腔室的一部分的详细视图。
图3示出根据所公开的技术的示例性喷淋头的底部平面图。
图4示出根据所公开的技术的示例性面板的平面图。
图5示出根据所公开的技术的实施例在图2A中沿线A-A所示的处理腔室的一部分的概要剖视图。
图6示出根据本技术的实施例的蚀刻基板的方法的流程图。
第7A-7B图示出利用以及不利用根据本技术的改良所收集的蚀刻率数据。
包含一些附图作为概要附图。应理解除非具体声明，否则附图用于说明目的而不考虑尺寸。
在附随的附图中，类似的部件和/或特征可具有相同的附图标记。此外，相同类型的各种部件可通过在附图标记之后加上区分这些类似部件之间的字母而区分。若仅第一附图标记被使用于说明书中，说明是可适用于具有相同第一附图标记的类似部件的任一者，而与字母无关。
具体实施方式
本技术包含用于半导体处理的系统和部件。处理腔室具有基于多个因素的特征操作配置文件，该因素包含操作条件、前体输送和腔室配置。例如，将前体输送到基板处理区域的处理腔室可能不会均匀地将前体输送进空间。前体可被从腔室的边缘朝腔室的中央输送，这可使基板的边缘区域比基板的中央区域暴露于更多的前体成分。此外，前体可被从中央区域向外输送，这可使基板的中央区域比边缘区域暴露于更多的前体成分。尽管有多个可被用以改善输送的均匀性的腔室部件(包含气体箱)，变化仍可存在于跨越处理腔室的剖面的前体输送。
在蚀刻操作中，前体可被输送到处理区域以与在基板上的材料相互作用来移除这些材料。调整前体成分和处理条件可能影响何种材料及以何种速率蚀刻材料。这些成分可在等离子体中被激发来增加它们的化学反应性。在某些工艺中，等离子体被用来激发前体，但蚀刻操作本身本质仍是化学的。例如，当前体的等离子体流出物通过如下所讨论的离子抑制组件而输送时，中性和自由基样品可被输送到基板，但离子样品可被部分地或全部地被移除来限制在蚀刻操作的任何等离子体成分。因此，蚀刻基于与在基板上的剩余流出物化学相互作用而发生。
多个蚀刻操作利用氟或含氟前体来执行蚀刻操作。氟前体可在等离子体中被激发，以产生可被输送到基板上并与基板上的材料化学反应的氟自由基，并随后被移除来将基板材料图案化。在某些腔室配置中，前体成分(包含等离子体流出物)可从边缘区域朝中央输送到腔室的处理区域，这可使基板的边缘区域比中央区域暴露于更多的前体成分。此前体成分可能接着使基板的边缘区域比中央区域暴露于更多的反应性成分，此可能产生可能比中央蚀刻率更高的边缘蚀刻率。这样的一个例子在以下的图7A中示出，其中基板的边缘区域基于腔室输送机构而被暴露于额外的等离子体流出物，此产生比中央区域优先蚀刻边缘区域的蚀刻轮廓。
可利用某些工艺条件来调整蚀刻轮廓。例如，腔室内的压力可被调整或操纵，以影响等离子体流出物输送和/或流动至该处理区域中，从而调整蚀刻轮廓。此外，通过添加额外的前体(诸如氢)，蚀刻的均匀性轮廓可被进一步地调整。然而，当腔室条件被调整至影响流动型态时或当额外的前体被包含于化学作用中时，虽然均匀性轮廓可被调整，蚀刻率可能被不利地降低，或蚀刻操作的选择性可能被影响。在某种程度上，所有这些调整可被执行，以通过操作腔室中的前体的流动而影响与基板中央区域相比边缘区域暴露于氟的程度，但这些调整在以蚀刻率作为代价而进行，蚀刻率可能随着每一修改而减少。然而，本技术提供了沿基板的边缘区域用于氟自由基的额外的再结合源，此允许边缘蚀刻率与中央区域蚀刻率一致，而不减少工艺的总蚀刻率。这将参照以下附图而详细地说明。
虽然其余公开书将照常地分辨利用所公开的技术的具体蚀刻工艺，将容易地理解系统和方法是同样地适用于可能发生在所述的腔室中的沉积和清洁工艺。所以，此技术不应被视为是受限为仅用于蚀刻工艺。
图1示出了根据实施例的沉积、蚀刻、烘烤及固化腔室的处理系统100的一个实施例的顶视平面图。在附图中，一对前开式晶片传送盒(FOUP)102供应各种尺寸的基板，基板通过机器手臂104而接收，且在被放置至位于串行区109a-c中的基板处理腔室108a-f的一者中之前被放置至低压保持区106中。第二机器手臂110可被用以从保持区106将基板晶片传输至基板处理腔室108a-f并返回。每一基板处理腔室108a-f可经配备来执行多个基板处理操作，包含除了周期性层沉积(CLD)、原子层沉积(ALD)、化学气相沉积(CVD)、物理气相沉积(PVD)、蚀刻、预清洁、除气、定向和其他基板工艺以外的本文所述的干蚀刻工艺。
基板处理腔室108a-f可包含用于沉积、退火、固化和/或蚀刻基板晶片上的介电膜的一个或多个系统部件。在一个配置中，两对处理腔室(如，108c-d和108e-f)可被用以将介电材料沉积于基板上，且第三对处理腔室(如，108a-b)，可被用以蚀刻所沉积的电介质。在另一配置中，所有的三对腔室(如，108a-f)可被配置为蚀刻在基板上的介电膜。所述的工艺的任一者或多者可在与不同实施例中所示的制造系统分离的(多个)腔室中实施。将理解的是系统100考虑了用于介电膜的沉积、蚀刻、退火和固化腔室的额外配置。
图2A示出在处理腔室内具有分区的等离子体产生区域的示例性工艺腔室系统200的剖视图。在膜蚀刻(如，氮化钛、氮化钽、钨、硅、多晶硅、氧化硅、氮化硅、氧氮化硅、氧碳化硅等等)期间，工艺气体可以通过气体入口组件205而流至第一等离子体区域215中。远程等离子体系统(RPS)201可选择地被包含在系统中，且可处理第一气体，该第一气体然后传播通过气体入口组件205。入口组件205可包含两或更多个不同的气体供应通道，其中第二通道(图未示)可绕过RPS 201(若有包含的话)。
冷却板203、面板217、离子抑制器223、喷淋头225及基板支撑件265被示出并且每一个可根据实施例而各被包含在内，该基板支撑件265具有设置于其上的基板255。基座265可具有热交换通道，热交换流体通过热交换通道，以控制基板的温度，热交换通道可被操作以在处理操作期间加热和/或冷却基板或晶片。基座265(可包括铝、陶瓷或它们的组合)的晶片支撑盘也可使用嵌入式电阻加热器组件而被电阻式加热，以达到相对高的温度(诸如从高达或约100℃到1100℃以上或约1100℃)。
面板217可以是金字塔形的、圆锥形的，或具有狭窄的顶端部分扩大成宽广的底端部分的另一种类似的结构。面板217可额外地如图所示般为平的，且包含用以将工艺气体分配的多个穿通通道。等离子体产生的气体和/或等离子体激发的样品，取决于RPS 201的使用，可穿过在面板217中的多个孔(在图2B中所示)，以更均匀地输送至第一等离子体区域215。
示例性的配置可包含具有气体入口组件205通过面板217而打开至与第一等离子体区域215分区的气体供给区域258中，使得气体/样品通过面板217中的孔而流入第一等离子体区域215。结构的和操作的特征可经选择以防止等离子体的大量回流从第一等离子体区域215返回至供应区域258、气体入口组件205和流体供应系统210。面板217或腔室的导电顶端部分以及喷淋头225被示出具有绝缘环220位于这些特征之间，此允许AC电位相对于喷淋头225和/或离子抑制器223而被施加到面板217。绝缘环220可被定位在面板217和喷淋头225和/或离子抑制器223之间，使得电容耦合等离子体(CCP)在第一等离子体区域中形成。隔板(图未示)可额外地被置于第一等离子体区域215中，或与气体入口组件205耦接，以影响通过气体入口组件205流至区域中的流体。
离子抑制器223可包括界定多个孔贯穿结构的板或其他几何形状，该结构被配置为抑制离子性带电物质迁移出等离子体激发区域215，同时允许未带电的中性或自由基样品通过离子抑制器223至抑制器和喷淋头之间的活化气体输送区域中。在实施例中，离子抑制器223可包括具有各种孔配置的穿孔板。这些未带电的样品可包含高度反应性的样品，高度反应性的样品与较低反应性的载气通过孔洞而传送。如上所述，通过孔的离子样品的迁移可被降低，且在某些情况下被完全地抑制。控制离子物质通过离子抑制器223的数量可有利地提供对于被引入与下方的晶片基板接触的气体混合物的增加的控制，此又可增加对气体混合物的沉积和/或蚀刻特性的控制。例如，对气体混合物的离子浓度的调整可显著地改变气体混合物的蚀刻选择性，如，SiNx：SiOx的蚀刻率、Si：SiOx的蚀刻率等等。在沉积被实施的替代实施例中，它也可改变介电材料的适配对可流动类型的沉积的平衡。
在离子抑制器223中的多个孔可被配置为控制活化气体(即，离子、自由基和/或中性样品)通过离子抑制器223。例如，孔的深宽比(或孔的直径比长度)和/或孔的几何形状可经控制，使得在活化气体中的离子性带电物质通过离子抑制器223的流量被减少。在离子抑制器223中的孔可包含面向等离子体激发区域215的圆锥形部分，和面向喷淋头225的圆柱形部分。圆柱形部分可经调整形状和尺寸，以控制通往喷淋头225的离子样品的流量。可调整的电偏压也可作为附加手段而被施加到离子抑制器223，以控制离子样品通过抑制器的流量。
离子抑制器223可作用以减少或消除从等离子体产生区域传播到基板的离子带电样品的量。未带电的中性和自由基样品仍可通过在离子抑制气中的开口，以与基板反应。应注意完全消除在围绕基板的反应区域中的离子带电样品可能无法在实施例中执行。在某些情况中，离子样品倾向到达基板，以执行蚀刻和/或沉积工艺。在这些情况中，离子抑制器可帮助将反应区中的离子样品的浓度控制在辅助工艺的等级。
与离子抑制器223结合的喷淋头225可允许等离子体存在于腔室等离子体区域215中，以避免在基板处理区域233中直接激发气体，同时仍然允许所激发的样品从腔室等离子体区域215传播到基板处理区域233。以此方式，腔室可被配置为阻止等离子体接触被蚀刻的基板255。这可以有利地保护了在基板上图案化的各种复杂的结构和膜，若这些结构和膜被所产生的等离子体直接接触，这些结构和膜这可能被损坏、被错位或以其他方式变形。此外，当等离子体被允许接触基板或接近基板的高度时，氧化物样品蚀刻的比率可能增加。所以，若材料的暴露区域被氧化，此材料可通过将等离子体保持远离基板而被进一步地保护。
处理系统可进一步包含电源240，电源240是与处理腔室电耦接，以提供电功率给面板217、离子抑制器223、喷淋头225和/或基座265来在第一等离子体区域215或处理区域233产生等离子体。电源可被配置为根据所执行的工艺来将可调整的电量输送至腔室。此配置可允许在正执行的工艺中使用可调的等离子体。不像远程等离子体单元(远程等离子体单元是经常呈现有开启或关闭的功能)，可调的等离子体可被配置为向等离子体区域215输送特定量的电力。此又可允许特定等离子体特性的发展，使得前体可以特定的方式而被解离来强化由这些前体所产生的蚀刻轮廓。
等离子体可在喷淋头225上方的腔室等离子体区域215或喷淋头225下方的基板处理区域233任一者中被点燃。等离子体可存在于腔室等离子体区域215，以从流入物(例如，含氟前体或其他前体)产生自由基前体。通常是在射频(RF)范围中的AC电压可被施加于处理腔室的导电顶端部分(诸如面板217)与喷淋头225和/或离子抑制器223之间，以于沉积期间在腔室等离子体区域215中点燃等离子体。RF电源可产生13.56MHz的高RF频率，但也可单独地或与13.56MHz的频率结合产生其他频率。
图2B示出通过面板217影响处理气体分布的特征的详细视图253。如图2A和2B中所示，面板217、冷却板203和气体入口组件205相交以限定气体供应区域258，工艺气体可从气体入口205而被输送至气体供应区域258中。气体可填充气体供应区域258并通过在面板217的孔洞259流至第一等离子体区域215。孔洞259可配置为以基本上单向的方式导引流动，使得工艺气体可流至处理区域233中，但可在穿过面板217之后部分地或完全地防止回流至气体供应区域258中。
用于在处理腔室区域200使用的气体分布组件(诸如喷淋头225)可被称为双通道喷淋头(DCSH)，且气体分布组件在图3和图4中所描述的实施例中被另外详细地说明。双通道喷淋头可提供用于允许在处理区域233的外侧分离蚀刻剂的蚀刻工艺，以在被输送至处理区域中之前，提供与腔室部件和彼此有限的相互作用。
喷淋头225可包括上板214和下板216。这些板可彼此耦接以界定于这些板之间的容积218。板的耦接可以提供通过上板和下板的第一流体通道219，和通过下板216的第二流体通道221。所形成的通道可配置为仅经由第二流体通道221从容积218提供通过下板216的流体存取，且第一流体通道219可与在这些板和第二流体通道221之间的容积218流体地隔离。容积218可通过气体分布组件225的一侧而流体存取。
图3根据实施例的用于与处理腔室使用的喷淋头325的底视图。喷淋头325对应于在图2A中所示的喷淋头。穿孔365(示出第一流体通道219的视图)可具有多个形状和配置，以控制和影响通过喷淋头225的前体的流动。小孔375(示出第二流体通道221的视图)可基本均匀地分布在喷淋头的表面上，甚至在穿孔365之间，且当前体离开喷淋头时，小孔375可帮助提供比其他配置更均匀的前体混合。
根据实施例的用于面板的配置在图4中示出。如图所示，面板400可包括穿孔板或歧管。面板的组件可类似于如图3中所示的喷淋头，或可包含为前驱气体的分布模式而专门地配置的设计。面板400可包含环形框架410，该环形框架410以各种配置定位在示例性处理腔室(诸如图2中所示的腔室)内。在框架上或框架内可耦接有板420，该板420可类似于如前所述的实施例中的离子抑制板器223。在实施例中，面板400可以是单件式设计，其中框架410和板420是单件的材料。
板可具有圆盘形状且安置于框架410上或框架410内。板可以是导电材料(诸如包含铝的金属)，也可以是允许板作为电极以在先前所述的等离子体配置中使用的其他导电材料。板可具有各种厚度，且可包含界定于板内的多个孔洞465。如图4中所示的示例性配置可包含如前所述与图3中的配置相关的图案，且可包含在几何图案(诸如如图所示的六角形)中的一系列的孔洞环。如将被理解的，所示的图案是示例性的，且应理解，各种图案、孔配置和孔间距都包含在设计中。
孔洞465可经调整尺寸或经配置以允许于操作期间流体流经孔洞。在各种实施例中，孔可经调整尺寸小于约2英寸，且可以小于1.5英寸或约1.5英寸、约1英寸、约0.9英寸、约0.8英寸、约0.75英寸、约0.7英寸、约0.65英寸、约0.6英寸、约0.55英寸、约0.5英寸、约0.45英寸、约0.4英寸、约0.35英寸、约0.3英寸、约0.25英寸、约0.2英寸、约0.15英寸、约0.1英寸、约0.05英寸等等，或更少。
转到图5，其示出沿图2A中所示的线A-A的剖视图。此剖视图示出腔室500的一部分，其包含与图2A中的喷淋头225相关的喷淋头525的底部，和与图2A中的基座265相关的基座565。腔室可包含如前所述的部件中的一些或全部。附图还包含腔室521、522的侧壁521、522的一部分，这可连同喷淋头525和基座565而帮助界定基板处理区域533。虽然未在附图中示出，在如前所述的喷淋头和/或离子抑制板的上方可以是远程等离子体区域，诸如如前所述的区域215或RPS单元201。
处理区域533可与远程等离子体区域流体耦接，且可通过喷淋头525而接收输送至处理区域的等离子体流出物。处理区域可被配置为在支撑基座565(诸如支撑盘567)上容纳基板。支持基座565(更具体地为支持盘567)可包含如图所示的内侧区域568和外侧区域569。外侧区域569可包含远离杆件570，或邻近腔室的侧壁522、521的任何区域。支撑基座565(可包含支撑盘567和杆件570两者)可包含由第一材料的合成物所制成或包含在由第一材料所组成的合成物中。基座部件可包含铝、陶瓷，或在半导体处理设备中有用的任意数目的材料。基座568的内侧区域568可包含第一材料或也由第一材料所组成。
支撑基座也可包含如图所示与基座的远程部分耦接的，或在外侧区域569处的环形构件505。环形构件可包含第二材料或由第二材料所组成，第二材料与第一材料不同。虽然称为环形，环形构件505可基于基座565或支撑盘567的几何形状而采取任何种的形式。例如，若支撑盘是方形的设计，环形构件505也可以是方型的设计，且任何种类的几何形状应被理解为由本技术所包含。环形构件505可与任何种的直接或间接的方式与基座565耦接，包含如将被理解的焊接、紧固、螺栓等等。在实施例中，环形构件可包含一个或多个凸耳或凸脊，以使与基座565的耦接更牢固。
环形构件可由第二材料所制成，且也可由以第二材料电镀于第一材料上或上方的第一材料所制成。第二材料可被完全地镀在环形构件的所有表面上，或在实施例中可不被设置在与支撑基座接触的环形构件的表面上。例如，环形构件505的外侧区域507可包含第二材料，但与基座565接触的内侧区域508可不包含第二材料。在此配置中，可提供一些益处，包含于操作期间较小的弯曲可能性，及沿基座565的外侧区域569保持更均匀的温度轮廓的能力。
在所公开的实施例中，环形构件可如由虚线510所示沿基座的外侧区域569，或沿外边缘，朝向杆件570延伸。通过沿基座的外侧表面或区域延伸环形构件，可给输送至处理区域533的前体和/或等离子体流出物作相互作用提供更多的第二材料的表面面积。当基板被设置在支撑盘567上时，基板可朝外侧区域569延伸，且可接触环形构件505或可能不接触环形构件505。例如，环形构件可在超过置中的基板区域(诸如内侧区域568)的大小的边缘区域处与支撑基座耦接。例如，直径为300mm的基板可专门地驻留在内侧区域568内，且接近但未接触环形构件505。应理解任何基板尺寸可基于腔室配置而利用，且包含维持所讨论的益处的对本系统的调整(诸如在较大的或较小的基座上的较大的或较小的基板)，其中环形构件不与基板接触而不管尺寸如何。
不意欲受任何特定的理论所限制，讨论可能的或所包含的机构可能是有用的。如先前所讨论的，多个蚀刻操作利用氟或含氟前体，以与在基板上的材料，或与基板本身相互作用。氟前体可如先前所讨论的在等离子体中被激发，且等离子体流出物可被提供至处理腔室用以接触基板或基板上的材料和/或与基板或基板上的材料相互作用。因为前体或等离子体流出物的流动轮廓，基板的外侧，或邻近腔室的外区域的边缘区域可被暴露于额外的蚀刻剂材料。然而，氟或氟化物自由基可包含朝向金属表面的亲合性，此可致使对氟气体的再结合。虽然氟化物自由基可以是高反应性来执行化学蚀刻，但是再结合的氟气体可能不是反应性的，或可能是低反应性的，且可被泵出处理区域，以便不与基板相互作用。
例如，环形构件，或环形构件的第二材料可基于氟对材料的亲合性而选择。因为多个腔室部件可以是相同的材料或第一材料(诸如铝)，第二材料可基于相对于第一材料的性质而选择。例如，氟具有对铝的一定亲合性。氟具有对其他金属(例如，包含镍或铂)更高的亲合性。所以，第二材料可以是氟对其具有比第一材料更高的亲合性的材料。以此方式，在腔室中的特定量的氟化物自由基可自然地朝第二材料流动。当在区域中的自由基的数量增加和/或自由基样品与第二材料关联时，氟化物自由基可彼此再结合或与其他通过的自由基样品再结合，以产生可从系统中移除的氟或氟化气体。这可接着减少在腔室的边缘区域中或沿着基板的边缘区域的氟化物自由基的浓度，此可以沿着基板的边缘区域按比例地减少蚀刻率。
所以，通过将氟对其具有较高亲合性的第二材料包含于邻近基座上的基板的边缘区域的环形构件中，第二材料可帮助降低沿着边缘区域的蚀刻率。此外，此调整可不影响或可最小地影响中央基板区域的蚀刻率。因此，在通过减少边缘蚀刻率而保持所需的整体蚀刻率的同时，整体蚀刻工艺可跨越基板的整个表面达到相对的或基本的均匀性。
在系统和/或腔室部件内的额外的调整可进一步地帮助此效果。这些调整可与材料选择一起作出，但可能不被包含在所有实施例中。例如，环形构件505可在支撑基座565的上表面的上方竖直地延伸。如图所示，支撑盘567可包含上表面，或基板可被配置为驻留在其上的表面。环形构件505可被配置为位于上表面的上方或基板的高度的上方的高度处。此修改可影响所输送的前体或等离子体流出物的流动轮廓，此可降低在基板的边缘区域处的相互作用，或提供增加的用于允许氟化物自由基再结合的相互作用的区域。
温度也可影响氟对第一和第二材料的亲合性。例如，较低的操作温度会降低金属或其他材料之间的亲合性差异，此可降低本技术的效果。然而，多个处理操作可以将基板保持在相对低的温度而进行。该技术的额外方面可允许亲合性差异被重新恢复。
在所公开的实施例中，蚀刻工艺可以在高于或大约50℃、80℃、100℃、150℃等等的温度下进行，使得可不使用该技术的额外方面。所公开的实施例也可在低于或大约100℃、80℃、50℃、35℃、10℃等等的温度下进行，此可影响在第一材料和第二材料之间的亲合性差异。本技术的一个或多个方面可被并入于环形构件中，或用以取代环形构件，以恢复亲合性差异。
如5图中所示，处理区域533可由侧壁521、522而至少部分地被界定。侧壁可包含第二材料，和/或可包含在所公开的实施例中的加热组件。如图所示，加热组件520可被包含于或嵌入在侧壁521中。加热器可位于侧壁的任何部分，且在实施例中可被包含于邻近喷淋头525。加热器可被配置为加热环形构件505的第二材料，同时限制对支撑基座565或驻留在基座上的基板的影响。如先前所讨论的，支撑基座可包含基座温度控制器(诸如流体通道或嵌入式加热器574)，以于操作期间加热或冷却基板。温度控制器574被示为在图5中的通道，但应理解为包含各种控制器，包含电阻加热组件，以及包含多个通道、线圈等等的各种通道配置。
在具有加热组件520的实施例中，基座温度控制器可被配置为将基座保持于第一温度，同时侧壁加热组件520可被配置为将环形构件保持于第二温度。例如，在实施例中，第二温度可大于第一温度。各种温度效应可被包含以调整与第一材料相关的第二材料的氟亲合性。例如，第一温度可以是大约或低于200℃、150℃、100℃、80℃、50℃、35℃、10℃、-10℃等等。第二温度可以是大约或高于40℃、50℃、80℃、100℃、150℃、200℃等等，使得环形构件的第二材料和基座的内侧区域之间的温度差568为大约或高于10℃、20℃、30℃、40℃、50℃、60℃、80℃、100℃、150℃等等，或更高。通过调整温度差，亲合效果可被调整以产生对边缘蚀刻率的特定调整，以将跨越基板表面的蚀刻率标准化。
加热组件520可位于侧壁515内，以最大化或增加加热组件的操作效率，或在环形构件的第二材料上最大化加热组件的效果。在实施例中，加热组件520可被包含在邻近喷淋头525处，如在约1英寸或更小、0.5英寸或更小、0.05英寸或更小、0.01英寸或更小等等内。通过将加热组件提供于喷淋头附近，通过其他侧壁或腔室部件(诸如侧壁522)所吸收的能量的数量可被降低，且向环形构件505的第二材料所提供的能量的量可被增强。
例如，实施例还可包含如第2A和5图中所示的远程等离子体区域和半导体处理区域。处理区域可与远程等离子体区域流体耦接，且可通过喷淋头525、基板支撑基座565、侧壁或侧壁区域521的每一者而被至少部分地界定，该基板支撑基座565可包含如先前所讨论的第一材料。在实施例中，侧壁区域521可与额外的侧壁区域522耦接，侧壁区域521与额外的侧壁区域522不同。侧壁521可包含内侧衬垫，该内侧衬垫包含不同于第一材料的第二材料(诸如例如，镍或铂作为第二材料，以及铝作为第一材料)。衬垫可位于侧壁区域的一部分或全部上，且可位于内侧腔室表面(诸如至少部分地界定腔室处理区域的表面)。然而，应理解可利用不同的第一材料，且第二材料可基于对第一材料的氟的亲合性，而第二材料可基于比第一材料更高的氟的亲合性来选择。因此，可使用任何数量的材料用于第一和第二材料，且被本技术所包含。
侧壁521可包含第二材料或由第二材料组成，或在实施例中，侧壁可以包含内侧衬垫515，该内侧衬垫515包含第二材料。腔室还可包含电阻加热器(诸如嵌入侧壁521中的加热组件520)。如先前所讨论的，电阻加热器可被包含或位于邻近喷淋头的侧壁内。衬垫515可沿着腔室处理区域的任何部分而被包含，且可能绕腔室内侧而周向地延伸，诸如沿着侧壁521。衬垫也以相对于支撑基座被包含，或在处理操作期间支撑基座可能被定位。例如，基座565可包含与杆件570耦接的平台567，该杆件570在操作期间被移动以将平台567(基板可被置于平台567上)定位在相对于或离喷淋头525的一定距离内。
当平台位于平台的操作位置时(诸如在蚀刻工艺期间)，衬垫515可被设置在侧壁上，从喷淋头垂直地沿着侧壁521至邻近与所耦接的平台567和杆件570之间的交叉处的距离。多个基座是朝喷淋头或从喷淋头可垂直地移动的，且在操作期间可被移动靠近喷淋头，虽然在任何工艺期间距离可以更大，更小，或可被调整。例如，基座可在较低的位置，以更容易地接收输送至腔室中的基板，且接着朝喷淋头升高用以处理。如图5中所示，当基座是位于基座用于处理基板的位置时，衬垫515可沿着侧壁521从与喷淋头525或可将喷淋头与侧壁隔离的电介质(图未示)的交叉处至靠近、位于或低于平台567与杆件570交叉处的距离处。
在实施例中，包含第二材料的衬垫可以类似环形构件505的方式而操作，且可与环形构件结合使用，或代替环形构件。基座还可包含温度控制器(诸如流体通道574)以控制基板的温度。温度控制器可被配置为保持在平台567上的基板在至少约20℃，或较低于由电阻加热器520所保持的侧壁521的温度的温度。在操作中，衬垫可以吸引氟化物，氟化物可具有对第二材料的亲和性，此可允许再结合成氟或氟化气体，并减少如前所述的边缘蚀刻率，以提供跨越基板的表面的更均匀的蚀刻率。此外，通过将第二材料包含在衬垫中，第二材料的温度可比环形构件被更容易地控制，环形构件可具有受加热组件520以及基座温度控制器两者所影响的温度。
先前关于第2A和5图中所描述的部件而讨论的腔室，可被用以执行多个工艺或操作，包含基板蚀刻操作。转到图6，示出一种用于蚀刻基板的此方法600。方法可包含提供基板到腔室，及执行也可在腔室内执行的任何预处理操作。在操作610处，等离子体流出物可通过喷淋头而被输送到半导体处理区域。驻留在支撑基座上的基板可在操作620处与等离子体流出物接触。基板支撑基座可包含第一材料，且还可包含与基座的远程部分耦接的环形构件。环形构件还可包含如先前所描述的与第一材料不同的第二材料。操作630可包含将环形构件保持在第一温度，在实施例中，环形构件可包含高于约50℃的温度。此可以任何数量的方式而被执行，包含若自然工艺温度是高于约50℃，或通过利用如前所讨论的任何数量的加热机构。可选地，操作640可包含基于用于蚀刻的工艺条件而将基板温度保持在第二温度，且第二温度可低于或约150℃。应理解操作也可以在如先前所讨论的任何其他的温度或范围下进行。
额外的或替代的方法可包含利用具有如前所述的与腔室侧壁相关的衬垫，和镶嵌在侧壁内的加热源件的腔室。方法可被执行以利用化学反应而不是在基板上的直接等离子体作用。例如，腔室处理区域在接触操作620期间可以是基本上没有等离子体的。这可通过如先前所述的利用远程等离子体，并将等离子体流出物输送至处理区域中而发生。
方法可允许更均匀的蚀刻跨越基板的表面而执行，如第7A和7B图的数据图所示。图7A示出300mm晶片在处理腔室中，无本技术的环形环或侧壁衬垫的蚀刻操作。如图所示，沿晶片的外部区域，由X轴所示，蚀刻率大大地增加，产生跨越表面的不均匀蚀刻。然而，图7B包含环形构件(诸如先前所描述的)，环形构件允许跨越基板的表面的均匀蚀刻率。额外的结果可以衬垫和/或加热组件结合或取代环形构件而实现。通过所公开的技术，基板的边缘蚀刻率可被保持在基板的内侧或中央区的刻蚀率的大约或低于+/-10％内，且可保持在中央蚀刻率的大约或低于+/-7％、5％、3％、1％等等内。此外，相对于多个可帮助减轻边缘蚀刻率的问题，但也可能不利地抑制中央区域的蚀刻率的处理操作改变(这可能增加队列时间、前体消耗及延长操作的操作成本)，中央蚀刻率可被保持在所需的比率，且可通过本技术而可不被抑制。
在前面的实施例中，为解释的目的，多个的细节已被提出，以提供本技术的各种实施例的理解。然而，对熟悉该技术者而言，一些实施例可不需这些细节的一些，或可具有额外的细节而实施将是明显的。
已经公开几个实施例，对熟悉该技术者而言，将可理解各种的修改、替代构造和等效组件可被使用而不背离实施例的精神。此外，一些已知的工艺和组件并未被说明，以避免不必要地模糊本技术。所以，以上的实施例不应被视为限制本技术的范围。此外，方法或工艺可依序或依步骤而说明，但应理解操作可同时地执行，或相较于所列出的顺序，以不同的顺序而执行。
当提供一数值范围时，除非上下文另有明确地说明，应理解在范围的上限和下限之间的每个中间值(直到下限的单位的最小分数)也被具体地公开。在指定的范围中的任何指定的数值或未指定的中间值及在指定的范围中的任何其他指定的数值或中间值之间的较窄范围被涵盖。这些较小范围的上限和下限可独立地被包含或排除在范围中，且每一范围(其中包含在较小范围中的上限和下限的任一者、未包含在较小范围中的上限或下限，或包含在较小范围中的上限和下限的两者)是也涵盖于技术内，受到在指定的范围中任何具体排除的限制。当范围包含上限和下限的一者或两者时，排除这些所包含的上限或下限的一者或两者的范围也被包含。
当于此和所附随的申请专利范围中所使用时，单数形式”一”、”一个”及”该”包含复数的关系，除非上下文另有明确说明。因此，例如，关于”一孔”是包含多个此种孔，且关于”该板”是包含与一个或多个板和对熟悉该技术领域者而言已知的等效组件等等有关。
此外，当在此说明书和以下的申请专利范围中使用时，用词”包括(comprises(s)、comprising)”、”含有(contain(s)、containing)”、和”包含(include(s)、including)”是意欲具体指明所指定的特征、整体、部件或操作的存在，但它们不排除一个或多个其他特征、整体、部件、操作、动作或群组的存在或增加。

Claims (15)

1.一种半导体处理腔室，包括：
远程等离子体区域；和
处理区域，所述处理区域与所述远程等离子体区域流体耦接，其中：
所述处理区域配置为在支撑基座上容纳基板，
所述支撑基座包括在所述基座的内侧区域的第一材料，
所述支撑基座包括与所述基座的远程部分耦接的环形构件，
所述环形构件沿着所述环形构件的全部内表面保持与所述支撑基座接触，且
所述环形构件包括与所述第一材料不同的第二材料，其中所述环形构件包括镀有所述第二材料的第一材料，其中所述第二材料包含镍或铂，且其中所述第二材料未设置于所述环形构件的与所述支撑基座接触的表面上。
2.如权利要求1所述的半导体处理腔室，其中所述环形构件沿着所述基座的外部边缘朝所述基座的杆件区域延伸。
3.如权利要求1所述的半导体处理腔室，其中所述支撑基座包括上表面，且其中所述环形构件在所述支撑基座的所述上表面的上方竖直地延伸。
4.如权利要求1所述的半导体处理腔室，其中所述环形构件是在超过置中的基板区域的大小的边缘区域处与所述支撑基座耦接。
5.如权利要求1所述的半导体处理腔室，其中氟对所述第二材料具有比对所述第一材料更高的亲合性。
6.如权利要求1所述的半导体处理腔室，其中所述处理区域由侧壁和喷淋头而至少部分地被界定，并且其中所述侧壁包含所述第二材料。
7.如权利要求6所述的半导体处理腔室，其中侧壁加热组件被镶嵌在邻近所述喷淋头的所述侧壁中。
8.如权利要求7所述的半导体处理腔室，其中所述支撑基座进一步包括基座温度控制器。
9.如权利要求8所述的半导体处理腔室，其中所述基座温度控制器被配置为将所述基座保持在第一温度，其中所述侧壁加热组件被配置为将所述环形构件保持在第二温度，其中所述第二温度大于所述第一温度。
10.一种半导体处理腔室，包括：
远程等离子体区域；和
处理区域，所述处理区域与所述远程等离子体区域流体耦接，其中：
所述处理区域通过一喷淋头、基板支撑基座和侧壁的每一者而至少部分地被界定，所述基板支撑基座包括第一材料，所述基板支撑基座包括环形构件，所述环形构件与所述基板支撑基座的远程部分耦接并且沿着所述环形构件的全部内表面保持与所述基板支撑基座接触，
所述侧壁包含位于内侧腔室表面上的衬垫，所述衬垫包括与所述第一材料不同的第二材料，其中所述基座包括与杆件耦接的平台，并且其中当所述平台位于升高的操作位置时，所述衬垫被设置在所述侧壁上，从所述喷淋头至靠近、位于或低于所述平台的表面的高度的距离处，其中所述第二材料包含镍或铂，且其中所述第二材料未设置于所述环形构件的与所述支撑基座接触的表面上，以及
电阻加热器是镶嵌于所述侧壁中。
11.如权利要求10所述的半导体处理腔室，其中所述基座包括温度控制器，并且其中所述温度控制器被配置为将基板温度保持在至少低于由所述电阻加热器所保持的所述侧壁温度20℃以下。
12.如权利要求10所述的半导体处理腔室，其中所述电阻加热器位于邻近所述喷淋头的所述侧壁内。
13.一种蚀刻基板的方法，包括以下步骤：
通过喷淋头将等离子体流出物输送至半导体处理区域中；
用所述等离子体流出物接触驻留在支撑基座上的基板，其中所述支撑基座包括第一材料，其中所述支撑基座可包括与基座的远程部分耦接的环形构件，并且其中所述环形构件沿着所述环形构件的全部内表面保持与所述基座接触，其中所述环形构件包括与所述第一材料不同的第二材料，其中所述环形构件包括镀有所述第二材料的第一材料，其中所述第二材料包含镍或铂，且其中所述第二材料未设置于所述环形构件的与所述支撑基座接触的表面上；并且
将所述环形构件保持在高于50℃的温度。
14.如权利要求13所述的方法，其中所述基板的边缘蚀刻率是在所述基板的中央蚀刻率的5％以内。
15.如权利要求13所述的方法，其中在所述接触操作期间，所述处理区域缺乏等离子体。
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US11637002B2 (en) 2023-04-25
US20170229291A1 (en) 2017-08-10
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US20160148821A1 (en) 2016-05-26
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