KR100638916B1 - 처리 장치 및 그 유지 보수 방법 - Google Patents
처리 장치 및 그 유지 보수 방법 Download PDFInfo
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- KR100638916B1 KR100638916B1 KR1020027015433A KR20027015433A KR100638916B1 KR 100638916 B1 KR100638916 B1 KR 100638916B1 KR 1020027015433 A KR1020027015433 A KR 1020027015433A KR 20027015433 A KR20027015433 A KR 20027015433A KR 100638916 B1 KR100638916 B1 KR 100638916B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
Abstract
Description
Claims (18)
- 처리실의 천정부를 구성하는 상부 전극 유닛과 상기 상부 전극 유닛을 승강시키는 것이 가능한 승강 기구를 구비한 처리 장치에 있어서,상기 상부 전극 유닛은 상부 조립체와 하부 조립체로 구성되고,상기 상부 조립체와 상기 하부 조립체는 상기 상부 전극 유닛의 외주면에 설치된 로크 기구에 의해 분리 합체 가능하며,상기 로크 기구를 로크시킨 상태에서는, 상기 상부 조립체와 상기 하부 조립체를 상기 승강 기구에 의해 일체적으로 상승시키는 것이 가능하고,상기 로크 기구를 언로크시킨 상태에서는, 상기 상부 조립체만을 상기 승강 기구에 의해 상승시키는 것이 가능한 것을 특징으로 하는처리 장치.
- 제 1 항에 있어서,상기 하부 조립체는 밀봉 부재를 거쳐 처리 용기의 상단부에 지지되고, 상기 처리 용기 내외의 기압차 및 상기 상부 전극 조립체의 자중에 의해 상기 처리실의 천정부에 기밀하게 고정 가능한 것을 특징으로 하는처리 장치.
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- 처리실의 천정부를 구성하는 상부 전극 유닛과 상기 상부 전극 유닛을 승강시키는 것이 가능한 승강 기구를 구비하고, 상기 상부 전극 유닛은 상기 처리실측의 하부 조립체와 전력 공급측의 상부 조립체로 구성되며, 상기 하부 조립체와 상기 상부 조립체는 상기 상부 전극 유닛의 외주면에 설치된 로크 기구에 의해서만 분리 합체 가능하고, 상기 하부 조립체는 기계적 기구 없이 상기 처리실내와 외부의 차압 및 상기 상부 전극 유닛의 자중에 의해 상기 처리실의 천정부에 기밀하게 고정 가능한 처리 장치의 유지 보수 방법에 있어서,상기 로크 기구를 로크한 상태로 상기 승강 기구에 의해 상기 상부 조립체와 상기 하부 조립체를 일체적으로 상승시킨 후에, 상기 처리실내를 유지 보수하는 공정을 포함하는 것을 특징으로 하는,처리 장치의 유지 보수 방법.
- 처리실의 천정부를 구성하는 상부 전극 유닛과 상기 상부 전극 유닛을 승강시키는 것이 가능한 승강 기구를 구비하고, 상기 상부 전극 유닛은 상기 처리실측의 하부 조립체와 전력 공급측의 상부 조립체로 구성되며, 상기 하부 조립체와 상기 상부 조립체는 상기 상부 전극 유닛의 외주면에 설치된 로크 기구에 의해서만 분리 합체 가능하고, 상기 하부 조립체는 기계적 기구 없이 상기 처리실내와 외부의 차압 및 상기 상부 전극 유닛의 자중에 의해 상기 처리실의 천정부에 기밀하게 고정 가능한 처리 장치의 유지 보수 방법에 있어서,상기 로크 기구를 언로크한 상태로 상기 승강 기구에 의해 상기 상부 조립체를 상승시킨 후, 상기 상부 조립체 및/또는 상기 하부 조립체를 유지 보수하는 공정을 포함하는 것을 특징으로 하는처리 장치의 유지 보수 방법.
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Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JPJP-P-2000-00144966 | 2000-05-17 | ||
JP2000144966 | 2000-05-17 | ||
PCT/JP2001/004066 WO2001088971A1 (fr) | 2000-05-17 | 2001-05-16 | Dispositif de traitement et procede d'entretien du dispositif, mecanisme et procede de montage d'une piece du dispositif de traitement, et mecanisme de verrouillage et procede de blocage du mecanisme de verrouillage |
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KR1020057005918A Division KR100638917B1 (ko) | 2000-05-17 | 2001-05-16 | 처리 장치 부품의 조립 기구 및 그 조립 방법 |
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KR20030013419A KR20030013419A (ko) | 2003-02-14 |
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KR1020027015433A KR100638916B1 (ko) | 2000-05-17 | 2001-05-16 | 처리 장치 및 그 유지 보수 방법 |
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US (2) | US6899786B2 (ko) |
JP (1) | JP4896337B2 (ko) |
KR (2) | KR100638917B1 (ko) |
CN (2) | CN1327493C (ko) |
TW (1) | TWI228747B (ko) |
WO (1) | WO2001088971A1 (ko) |
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KR20160007394A (ko) * | 2014-07-11 | 2016-01-20 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 및 상부 전극 어셈블리 |
KR102429613B1 (ko) | 2014-07-11 | 2022-08-04 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 및 상부 전극 어셈블리 |
Also Published As
Publication number | Publication date |
---|---|
CN1630041A (zh) | 2005-06-22 |
US7481903B2 (en) | 2009-01-27 |
US20040108068A1 (en) | 2004-06-10 |
CN1199247C (zh) | 2005-04-27 |
CN1327493C (zh) | 2007-07-18 |
CN1429404A (zh) | 2003-07-09 |
KR100638917B1 (ko) | 2006-10-25 |
KR20030013419A (ko) | 2003-02-14 |
KR20050047134A (ko) | 2005-05-19 |
US20050150456A1 (en) | 2005-07-14 |
US6899786B2 (en) | 2005-05-31 |
TWI228747B (en) | 2005-03-01 |
WO2001088971A1 (fr) | 2001-11-22 |
JP4896337B2 (ja) | 2012-03-14 |
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