JP2017539087A - プロセス均一性を高めるための方法およびシステム - Google Patents
プロセス均一性を高めるための方法およびシステム Download PDFInfo
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Abstract
半導体処理チャンバは、遠隔プラズマ領域と、遠隔プラズマ領域と流体的に結合された処理領域とを含むことができる。処理領域は、支持ペデスタル上に基板を収容するように構成することができる。支持ペデスタルは、ペデスタルの内部領域に第１の材料を含むことができる。支持ペデスタルはまた、ペデスタルの遠位部分に結合された、またはペデスタルの外部領域において、環状部材を含むことができる。環状部材は、第１の材料とは異なる第２の材料を含むことができる。【選択図】図１
Description
本技術は、半導体プロセスおよび装置に関する。より具体的には、本技術は、エッチング工程中のプロセスの均一性を改善することに関する。
集積回路は、基板表面上に複雑にパターニングされた材料層を生成するプロセスによって可能になる。基板上にパターニングされた材料を製造するには、露出した材料を除去するための制御された方法が必要である。同じ手順が多くの基板上で行われ、プロセス条件および結果がしばしば狭い許容誤差内に保持される。しばしば、エッチングまたは除去工程が実行されるときに、基板にわたる均一性を維持することが困難である。
多くの状況において、チャンバ構成またはプロセス条件に基づいて、除去工程の均一性を維持することは制御するのが困難な場合がある。プロセス条件は調整することができるが、プロセス条件の許容誤差は、利用可能な修正の量または程度を制限することがある。このため、均一性は、プロセス条件によって限定された範囲でしか制御することができない。
したがって、中心領域から縁領域に至る基板の全表面にわたるプロセス条件の改善された均一性を可能にすることができる、改善されたシステム構成要素が必要とされている。これらおよび他の要求が、本技術によって対処される。
プロセス均一性を改善するための方法およびシステムが記載されており、例示的な半導体処理チャンバは、遠隔プラズマ領域と、遠隔プラズマ領域と流体的に連結された処理領域とを含むことができる。処理領域は、支持ペデスタル上に基板を収容するように構成することができる。支持ペデスタルは、ペデスタルの内部領域に第１の材料を含むことができる。支持ペデスタルはまた、ペデスタルの遠位部分に結合された又はペデスタルの外部領域に環状部材を含むことができる。環状部材は、第１の材料とは異なる第２の材料を含むことができる。
環状部材は、第２の材料でめっきされた第１の材料を含むことができ、実施形態では、第２の材料は、支持ペデスタルと接触する環状部材の表面上に配置されなくてもよい。環状部材は、ペデスタルのステム領域に向かってペデスタルの外縁に沿って延びることができる。支持ペデスタルは、上面を含み、環状部材は、実施形態において、支持ペデスタルの上面の上に垂直に延びることができる。環状部材は、中心に位置する基板領域の広がりを越える縁領域で支持ペデスタルと結合されてもよい。実施形態では、フッ素は、第１の材料よりも第２の材料に対して高い親和性を有してもよく、第２の材料は、ニッケルまたは白金を含んでもよい。処理領域は、側壁によって少なくとも部分的に画定されてもよく、実施形態では、側壁は第２の材料を含んでもよい。さらに、側壁加熱エレメントが、シャワーヘッドに近接する側壁に埋め込まれてもよい。支持ペデスタルもまた、ペデスタル温度制御部を含んでもよく、ペデスタル温度制御部は、ペデスタルを第１の温度に維持するように構成され、他方、側壁加熱エレメントは、環状部材を第２の温度に維持するように構成され得る。実施形態では、第２の温度は、第１の温度より高くてもよい。
遠隔プラズマ領域と、遠隔プラズマ領域と流体的に連結された処理領域とを含むことができる半導体チャンバも記載される。例示的なチャンバでは、処理領域は、シャワーヘッド、第１の材料を含む基板支持ペデスタル、および側壁のそれぞれによって少なくとも部分的に画定されてもよい。側壁は、第１の材料とは異なる第２の材料を含む内部ライナを含むことができ、また、側壁に埋め込まれた抵抗ヒータを含むことができる。実施形態では、ペデスタルは、ステムに結合されたプラットフォームを含むことができる。さらに、ライナは、シャワーヘッドから、結合されたプラットフォームとステムとの間の交差部に近接する距離まで、側壁上に配置されてもよい。実施形態では、ペデスタルは温度制御部を含んでもよく、温度制御部は、抵抗ヒータによって維持される側壁温度よりも少なくとも２０℃低く基板温度を維持するように構成されてもよい。また、抵抗ヒータは、シャワーヘッドに近接する側壁内に配置されてもよい。
基板をエッチングする方法もまた記載されており、プラズマ放出物をシャワーヘッドを通して半導体処理領域に供給することを含むことができる。本方法は、支持ペデスタル上に存在する基板をプラズマ放出物と接触させることを含むことができる。支持ペデスタルは、実施形態ではアルミニウムであってもよい第１の材料を含むことができ、支持ペデスタルはまた、ペデスタルの遠位部分と結合された環状部材を含むことができる。環状部材は、本技術の実施形態において、第１の材料とは異なる第２の材料を含むことができる。本方法はまた、環状部材を約５０℃より高い温度に実質的に維持することを含むことができる。さらに、本方法は、接触工程中にプラズマを実質的に欠く処理領域を維持することを含むことができる。本技術のシステムおよび方法を利用して、基板の縁部エッチング速度を、基板の中心エッチング速度の約５％以内に維持することができる。
そのような技術は、従来のシステムおよび技術に対して多くの利点を提供することができる。例えば、縁部エッチング速度は、中心エッチング速度の小さな変動内であり得る。更なる利点は、エッチング工程のこの一貫性が、基板表面の使用可能な領域を増加させる可能性があることである。これらのおよび他の実施形態が、それらの利点および特徴の多くと共に、以下の説明および添付図面と併せて、より詳細に説明される。
開示された技術の性質および利点のさらなる理解が、明細書の残りの部分および図面を参照することによって実現され得る。
図のいくつかは、概略図として含まれている。これらの図は、説明の目的のためのものであり、具体的にそのように述べられていない限り、一定の縮尺と見なすべきではないことを理解されたい。
添付の図面において、類似の構成要素および／または特徴は、同じ参照ラベルを有することがある。さらに、同じタイプの様々な構成要素は、類似の構成要素を区別する文字が参照ラベルの後に続くことによって区別することができる。本明細書において、最初の参照ラベルのみを用いる場合には、文字によらず最初の参照ラベルが同じである類似の構成要素のいずれにも、説明を適用することができる。
本技術は、半導体処理のためのシステムおよび構成要素を含む。処理チャンバは、動作条件、前駆体供給、およびチャンバ構成を含む多くの要因に基づくシグネチャー動作プロファイルを有する。例えば、前駆体を基板処理領域に供給する処理チャンバは、前駆体を該空間内に均一に供給しないことがある。前駆体は、チャンバの縁部からチャンバの中心に向かって供給されてもよく、これにより、基板の縁領域を、基板の中心領域よりも多くの前駆体成分に暴露し得る。さらに、前駆体は、中心領域から外側に供給されてもよく、これにより、基板の中心領域を、縁領域よりも多くの前駆体成分に暴露し得る。供給の均一性を改善するために使用され得る、ガスボックスを含む多くのチャンバ構成要素にもかかわらず、処理チャンバの断面にわたる前駆体供給には依然として変動が存在し得る。
エッチング工程では、基板上の材料と相互作用してこれらの材料を除去するために、前駆体を処理領域に供給することができる。前駆体成分および処理条件を調整することにより、どの材料およびどの程度の速度で材料がエッチングされるかが影響を受ける可能性がある。これらの成分は、化学反応性を高めるためにプラズマ中で励起されてもよい。特定のプロセスでは、前駆体を励起するためにプラズマが使用されるが、エッチング工程自体は本質的に化学的である。例えば、前駆体のプラズマ放出物が、以下に説明するように、イオン抑制要素を通って供給される場合、中性およびラジカル種が基板に供給され得るが、イオン種は、エッチング工程のプラズマ成分を制限するために、一部または全部が除去され得る。したがって、エッチングは、基板上の残りの放出物との化学的相互作用に基づいて行われる。
多くのエッチング工程は、フッ素またはフッ素含有前駆体を利用して、エッチング工程を行う。フッ素前駆体は、プラズマ中で励起されて、フッ素ラジカルを生成し、基板上の材料に供給され、化学的に反応し、その後、除去され、基板材料をパターニングし得る。特定のチャンバ構成では、プラズマ放出物を含む前駆体成分が、縁領域から中心に向かってチャンバの処理領域に供給され、これにより、基板の縁領域を、中心領域よりも多くの前駆体成分に暴露し得る。そのような前駆体成分は、そのとき、基板の縁領域を、中心領域よりも多くの反応性成分に暴露することができ、中心エッチング速度よりも高い縁部エッチング速度を生じさせ得る。これの１つの例を、以下の図７Ａに示す。ここで、基板の縁領域は、チャンバ供給機構に基づいて、追加のプラズマ放出物に暴露され、中心領域よりも縁領域を優先的にエッチングしたエッチングプロファイルを生成した。
このエッチングプロファイルを調整するために、特定のプロセス条件を利用することができる。例えば、チャンバ内の圧力が、処理領域へのプラズマ放出物の供給および／または流れに影響を与え、それによってエッチングプロファイルを調整するように、調整または操作されてもよい。さらに、水素などの追加の前駆体を加えることによって、エッチングの均一性プロファイルをさらに調整することができる。しかしながら、流れの状態に影響を及ぼすようにチャンバ条件が調整される場合、または追加の前駆体が化学反応に関与する場合、均一性プロファイルを調整することができるけれども、エッチング速度が不利に低下することもあるし、エッチング工程の選択性に影響を及ぼすこともある。ある程度まで、チャンバ内の前駆体の流れを操作することによって、基板の中心領域に比べて縁領域のフッ素への暴露に影響を及ぼすように、これらの調整をすべて行うことができるが、エッチング速度を犠牲にして行われ、エッチング速度は、それぞれの変更に伴い減少する可能性がある。しかしながら、本技術は、基板の縁領域に沿ってフッ素ラジカルの追加の再結合源を提供し、プロセスの全体的なエッチング速度を低下させることなく、縁部エッチング速度を中心領域エッチング速度と均一にすることを可能にする。これについて、以下に図を参照して詳細に説明する。
残りの開示は、開示された技術を利用する特定のエッチングプロセスを機械的に同定するが、当該システムおよび方法は、説明されたチャンバで起こり得る堆積プロセスおよび洗浄プロセスに等しく適用可能であることが容易に理解されるであろう。したがって、本技術は、エッチングプロセスだけの使用に限定されていると考えるべきでない。
図１は、実施形態による、堆積、エッチング、ベーキングおよび硬化チャンバの処理システム１００の一実施形態の平面図を示す。図では、一対の前方開口型統一ポッド（ＦＯＵＰ）１０２が、様々なサイズの基板を供給し、基板はロボットアーム１０４によって受け取られ、低圧保持領域１０６内に配置され、その後、タンデムセクション１０９ａ−ｃに配置された基板処理チャンバ１０８ａ−ｆの１つに配置される。第二のロボットアーム１１０が、基板ウェハを保持領域１０６から基板処理チャンバ１０８ａ−ｆに移送し、そして戻すために使用されてもよい。各基板処理チャンバ１０８ａ−ｆは、周期的層堆積（ＣＬＤ）、原子層堆積（ＡＬＤ）、化学気相堆積（ＣＶＤ）、物理的気相堆積（ＰＶＤ）、エッチング、前洗浄、ガス抜き、配向、および他の基板プロセスの他に、本明細書に記載されているドライエッチングプロセスを含む幾つかの基板処理工程を実行するように装備することができる。
基板処理チャンバ１０８ａ−ｆは、基板ウェハ上で誘電体膜を堆積、アニール、硬化および／またはエッチングするための１つ以上のシステム構成要素を含むことができる。１つの構成では、処理チャンバの２つの対、例えば１０８ｃ−ｄと１０８ｅ−ｆを用いて、基板上に誘電体材料を堆積させることができ、第３の対の処理チャンバ、例えば１０８ａ−ｂを用いて、堆積した誘電体をエッチングすることができる。別の構成では、３対全てのチャンバ、例えば１０８ａ−ｆが、基板上で誘電体膜をエッチングするように構成されてもよい。記載されたプロセスのうちの任意の１つ以上が、異なる実施形態に示される製造システムから分離されたチャンバ（複数可）内で実行されてもよい。誘電体膜用の堆積、エッチング、アニーリング、および硬化チャンバの追加の構成が、システム１００によって企図されることが理解されよう。
図２Ａは、処理チャンバ内に区画されたプラズマ生成領域を有する例示的な処理チャンバシステム２００の断面図を示す。例えば、窒化チタン、窒化タンタル、タングステン、ケイ素、ポリシリコン、酸化ケイ素、窒化ケイ素、酸窒化ケイ素、酸炭化ケイ素などの膜エッチングの間、プロセスガスが、ガス入口アセンブリ２０５を通って第１のプラズマ領域２１５に流入することができる。遠隔プラズマシステム（ＲＰＳ）２０１が、任意選択でシステムに含まれてもよく、その後にガス入口アセンブリ２０５を通って進む第１のガスを処理してもよい。入口アセンブリ２０５は、２つ以上の異なるガス供給チャネルを含んでもよく、第２のチャネル（図示せず）が含まれる場合、ＲＰＳ２０１を迂回することができる。
冷却プレート２０３、フェースプレート２１７、イオンサプレッサ２２３、シャワーヘッド２２５、およびその上に配置された基板２５５を有する基板支持体２６５が示され、それぞれ実施形態に従って含まれてもよい。ペデスタル２６５は、基板の温度を制御するために、熱交換流体が流れる熱交換チャネルを有してもよく、これは、処理工程中に基板またはウェハを加熱および／または冷却するように動作することができる。アルミニウム、セラミック、またはそれらの組み合わせを含むことができる、ペデスタル２６５のウェハ支持プラッタが、例えば約１００℃以下から約１１００℃以上までの比較的高い温度を達成するために、埋め込まれた抵抗ヒータエレメントを使用して、抵抗加熱されてもよい。
フェースプレート２１７は、ピラミッド型、円錐型、または幅の広い底部に広がる狭い上部を有する別の類似の構造であってもよい。フェースプレート２１７は、図示のようにさらに平坦であってもよく、プロセスガスを分配するために使用される複数の貫通チャネルを含んでもよい。ＲＰＳ２０１の使用に応じて、プラズマ生成ガスおよび／またはプラズマ励起種が、第１のプラズマ領域２１５へのより均一な供給のための、フェースプレート２１７内の、図２Ｂに示す複数の孔を通過することができる。
例示的な構成は、ガス／種がフェースプレート２１７の孔を通って第１のプラズマ領域２１５に流れるように、フェースプレート２１７によって第１のプラズマ領域２１５から区画されたガス供給領域２５８にガス入口アセンブリ２０５が開いていてもよい。構造的および動作的特徴が、第１のプラズマ領域２１５から供給領域２５８、ガス入口アセンブリ２０５、および流体供給システム２１０へのプラズマの著しい逆流を防止するように選択されてもよい。フェースプレート２１７、すなわちチャンバの導電性上部、およびシャワーヘッド２２５が、これら部品の間に配置された絶縁リング２２０と共に示されており、絶縁リングにより、シャワーヘッド２２５および／またはイオンサプレッサ２２３に対してＡＣ電位がフェースプレート２１７に印加されることが可能になる。絶縁リング２２０は、フェースプレート２１７とシャワーヘッド２２５および／またはイオンサプレッサ２２３との間に配置され、容量結合プラズマ（ＣＣＰ）を第１のプラズマ領域に形成することができる。バッフル（図示せず）が、ガス入口アセンブリ２０５を通る第１のプラズマ領域への流体の流れに影響を及ぼすために、第１のプラズマ領域２１５に追加的に配置されてもよいし、そうでなければガス入口アセンブリ２０５と結合されてもよい。
イオンサプレッサ２２３は、構造全体に複数の開孔部を画定するプレートまたは他の形状を含むことができ、これら複数の開孔部は、プラズマ励起領域２１５からのイオン性荷電種の移動を抑制しながら、非荷電中性またはラジカル種がイオンサプレッサ２２３を通ってサプレッサとシャワーヘッドとの間の活性化ガス供給領域に入ることを可能にするように、構成されている。実施形態では、イオンサプレッサ２２３は、様々な開孔部構成の有孔プレートを含むことができる。これらの非荷電種は、反応性の低いキャリアガスとともに開孔部を通って輸送される反応性の高い種を含むことができる。上記のように、孔を通るイオン種の移動が減少し、ある場合には完全に抑制される。イオンサプレッサ２２３を通過するイオン種の量を制御することにより、有利には、下にあるウェハ基板と接触する混合ガスに対する制御を増加させることができ、このことは、混合ガスの堆積および／またはエッチング特性の制御を高めることができる。例えば、混合ガスのイオン濃度の調節は、そのエッチング選択性、例えば、ＳｉＮｘ：ＳｉＯｘエッチング比、Ｓｉ：ＳｉＯｘエッチング比などを大幅に変える可能性がある。堆積が行われる代替の実施形態では、誘電体材料の共形性対流動性スタイルの堆積のバランスをシフトさせることもできる。
イオンサプレッサ２２３の複数の開孔部は、イオンサプレッサ２２３を通る活性化ガス、すなわちイオン種、ラジカル種、および／または中性種の通過を制御するように構成することができる。例えば、イオンサプレッサ２２３を通過する活性化ガス中のイオン性荷電種の流れが減少するように、孔のアスペクト比、すなわち孔の直径対長さ、および／または孔の形状寸法を制御することができる。イオンサプレッサ２２３の孔は、プラズマ励起領域２１５に面するテーパ部と、シャワーヘッド２２５に面する円筒部とを含んでいてもよい。円筒部は、シャワーヘッド２２５に流れるイオン種の流れを制御するような形状及び寸法にすることができる。調節可能な電気的バイアスを、サプレッサを通るイオン種の流れを制御するための追加の手段として、イオンサプレッサ２２３に印加することもできる。
イオンサプレッサ２２３は、プラズマ生成領域から基板に移動するイオン性荷電種の量を低減または除去するように機能することができる。非荷電中性およびラジカル種は、なおもイオンサプレッサーの開口部を通過して、基板と反応し得る。実施形態では、基板を囲む反応領域におけるイオン性荷電種の完全な除去は、実行されないことがあることに留意されたい。場合によっては、エッチングおよび／または堆積プロセスを実行するために、イオン種が基板に到達することが意図される。これらの場合、イオンサプレッサは、プロセスを促進するレベルに反応領域内のイオン種の濃度を制御するのを助けることができる。
イオンサプレッサ２２３と組み合わせたシャワーヘッド２２５は、チャンバプラズマ領域２１５内に存在するプラズマが基板処理領域２３３内のガスを直接励起するのを回避することを可能にし、同時に、なおも励起種がチャンバプラズマ領域２１５から基板処理領域２３３に移動することを可能にし得る。このようにして、チャンバは、プラズマが、エッチングされている基板２５５と接触することを防止するように構成されてもよい。これは、基板上にパターニングされた様々な複雑な構造及び膜を有利に保護することができ、それらは、生成されたプラズマに直接接触した場合、損傷、転位、又は反りが生じる可能性がある。さらに、プラズマが基板に接触するかまたは基板の高さに近づくことができると、酸化物種のエッチング速度が増加する可能性がある。したがって、材料の露出領域が酸化物である場合、この材料は、プラズマを基板から遠隔に維持することによって、さらに保護され得る。
処理システムは、フェースプレート２１７、イオンサプレッサ２２３、シャワーヘッド２２５、および／またはペデスタル２６５に電力を供給して、第１のプラズマ領域２１５または処理領域２３３にプラズマを生成するために、処理チャンバと電気的に結合された電源２４０をさらに含んでもよい。電源は、実行されるプロセスに応じて、調節可能な量の電力をチャンバに供給するように構成することができる。このような構成は、実行されているプロセスにおいて調整可能なプラズマを使用することを可能にすることができる。オンまたはオフの機能を備えていることが多い遠隔プラズマユニットとは異なり、調節可能なプラズマは、プラズマ領域２１５に特定量の電力を供給するように構成することができる。これは、前駆体が特定の方法で解離されて、これらの前駆体によって生成されるエッチングプロファイルを向上させるような、特定のプラズマ特性の開発を可能にし得る。
プラズマは、シャワーヘッド２２５の上方のチャンバプラズマ領域２１５またはシャワーヘッド２２５の下の基板処理領域２３３のいずれかで点火され得る。プラズマは、チャンバプラズマ領域２１５内に存在して、例えばフッ素含有前駆体または他の前駆体の流入からラジカル前駆体を生成することができる。堆積中にチャンバプラズマ領域２１５内にプラズマを点火させるために、典型的には、高周波（ＲＦ）範囲内のＡＣ電圧が、フェースプレート２１７などの処理チャンバの導電性上部と、シャワーヘッド２２５および／またはイオンサプレッサ２２３との間に印加され得る。ＲＦ電源は、１３．５６ＭＨｚの高いＲＦ周波数を生成することができるが、単独で又は１３．５６ＭＨｚの周波数と組み合わせて他の周波数を生成することもできる。
図２Ｂは、フェースプレート２１７を通る処理ガス分布に影響を与える特徴部の詳細図２５３を示す。図２Ａおよび２Ｂに示すように、フェースプレート２１７、冷却プレート２０３、およびガス入口アセンブリ２０５が交差して、プロセスガスがガス入口２０５から供給され得るガス供給領域２５８を画定する。ガスは、ガス供給領域２５８を満たし、フェースプレート２１７の開孔部２５９を通って第１のプラズマ領域２１５に流れることができる。開孔部２５９は、プロセスガスが処理領域２３３に流入することができるが、フェースプレート２１７を横切った後、ガス供給領域２５８に逆流することを部分的にまたは完全に防止することができるように、実質的に一方向に流れを方向付けるように構成されてもよい。
処理チャンバセクション２００で使用するためのシャワーヘッド２２５などのガス分配アセンブリは、デュアルチャネルシャワーヘッド（ＤＣＳＨ）と呼ばれてもよく、本明細書中で図３及び図４に記載された実施形態でさらに詳述されている。デュアルチャネルシャワーヘッドは、処理領域２３３の外側でエッチャントを分離させて、処理領域に供給される前に、チャンバ構成要素とのおよび相互の限定された相互作用を提供するエッチングプロセスを提供することができる。
シャワーヘッド２２５は、上部プレート２１４および下部プレート２１６を備えることができる。プレートは、互いに連結されて、プレート間に容積２１８を画定することができる。プレートの連結は、上部プレートおよび下部プレートを通る第１の流体チャネル２１９、並びに下部プレート２１６を通る第２の流体チャネル２２１を提供するようにすることができる。形成されたチャネルは、第２の流体チャネル２２１のみを介して下部プレート２１６を通る容積２１８からの流体アクセスを提供するように構成され、第１の流体チャネル２１９は、プレート間の容積２１８と第２の流体チャネル２２１から流体的に隔離され得る。容積２１８は、ガス分配アセンブリ２２５の側面を通して流体的にアクセス可能であってもよい。
図３は、実施形態による処理チャンバで使用するためのシャワーヘッド３２５の底面図である。シャワーヘッド３２５は、図２Ａに示すシャワーヘッドに対応する。第１の流体チャネル２１９の眺めを示すスルーホール３６５は、シャワーヘッド２２５を通る前駆体の流れを制御し、影響を及ぼすために、複数の形状および構成を有することができる。第２の流体チャネル２２１の眺めを示す小さな孔３７５は、スルーホール３６５の間でさえも、シャワーヘッドの表面上に実質的に均一に分布させることができ、他の構成よりも、前駆体がシャワーヘッドを出るときに、それらがより均一に混合するのを助けることができる。
実施形態によるフェースプレートの構成を図４に示す。図示されているように、フェースプレート４００は、有孔プレートまたはマニホールドを含んでもよい。フェースプレートのアセンブリは、図３に示すようなシャワーヘッドに類似していてもよいし、または前駆体ガスの分布パターン用に特別に構成された設計を含んでもよい。フェースプレート４００は、図２に示すようなチャンバなどの例示的な処理チャンバ内に様々な配置で配置された環状フレーム４１０を含んでもよい。フレーム上またはフレーム内にプレート４２０を結合することができ、プレート４２０は、先に説明したようなイオンサプレッサプレート２２３と、実施形態において類似していてもよい。実施形態では、フェースプレート４００は、フレーム４１０とプレート４２０が単一の材料部品である一体成形設計とすることができる。
プレートは、ディスク形状を有し、フレーム４１０の上または内部に据え付けることができる。プレートは、アルミニウムを含む金属などの導電性材料であってもよく、前述したように、プレートがプラズマ配置での使用のための電極として機能することを可能にする他の導電性材料であってもよい。プレートは、様々な厚さであってよく、プレート内に画定された複数の開孔部４６５を含んでもよい。図４に示されるような例示的な構成は、図３の構成を参照して前述したようなパターンを含んでもよく、図に示すような六角形などの幾何学的パターンの開孔部の一連のリングを含むことができる。理解されるように、図示されたパターンは例示的なものであり、様々なパターン、孔の配列、および孔の間隔が設計に包含されることを理解されたい。
開孔部４６５は、動作中に開孔部を通って流体が流れることを可能にするような大きさにされてもよいし、さもなければ構成されてもよい。開孔部は、様々な実施形態において、約２インチ未満のサイズとすることができ、約１．５インチ以下、約１インチ以下、約０．９インチ以下、約０．８インチ以下、約０．７５インチ以下、約０．７インチ以下、約０．６５インチ以下、約０．６インチ以下、約０．５５インチ以下、約０．５インチ以下、約０．４５インチ以下、約０．４インチ以下、約０．３５インチ以下、約０．３インチ以下、約０．２５インチ以下、約０．２インチ以下、約０．１５インチ以下、約０．１インチ以下、約０．０５インチ以下など、又はそれ未満であってもよい。
図５は、図２ＡのＡ−Ａ線に沿った断面図である。この断面図は、図２Ａのシャワーヘッド２２５に関連するシャワーヘッド５２５の底部と、図２Ａのペデスタル２６５に関連するペデスタル５６５とを含むチャンバ５００の一部を示す。チャンバは、前に説明した構成要素のいくつかまたはすべてを含むことができる。この図はまた、シャワーヘッド５２５およびペデスタル５６５と共に基板処理領域５３３を画定するのに役立ち得るチャンバの側壁５２１，５２２の一部を含む。図には示されていないが、上述したシャワーヘッドおよび／またはイオン抑制プレートの上には、先に説明した領域２１５またはＲＰＳユニット２０１などの遠隔プラズマ領域があってもよい。
処理領域５３３は、遠隔プラズマ領域と流体的に連結され、シャワーヘッド５２５を通って処理領域に供給されるプラズマ放出物を受け入れることができる。処理領域は、支持プラッタ５６７上などの支持ペデスタル５６５上に基板を収容するように構成することができる。支持ペデスタル５６５、より具体的には支持プラッタ５６７は、図示のように内部領域５６８および外部領域５６９を含むことができる。外部領域５６９は、ステム５７０から遠位の、すなわちチャンバの側壁５２２，５２１に近接する任意の領域を含むことができる。支持ペデスタル５６５は、支持プラッタ５６７とステム５７０の両方を含むことができ、第１の材料で作られるか、または組成物中に第１の材料を含むことができる。ペデスタル構成要素は、アルミニウム、セラミック、または半導体処理装置に有用な任意の数の材料を含み得る。ペデスタル５６８の内部領域は、第１の材料を含んでもよいし、第１の材料から構成されてもよい。
支持ペデスタルはまた、ペデスタルの遠位部分に結合された、または図示のように外部領域５６９に、環状部材５０５を含むことができる。環状部材は、第１の材料とは異なる第２の材料を含むか、または第１の材料とは異なる第２の材料からなることができる。環状と呼ばれるが、環状部材５０５は、ペデスタル５６５または支持プラッタ５６７の形状に基づいて、任意の数の形態をとることができる。例えば、支持プラッタが正方形の設計である場合、環状部材５０５も同様であってよく、任意の種類の形状が本技術に包含されると理解されるべきである。環状部材５０５は、理解されるように、溶接、固定、ボルト止めなどの任意の数の直接的または間接的な方法でペデスタル５６５と結合され得る。実施形態では、環状部材は、ペデスタル５６５とのより確実な結合を可能にするために、１つ以上の棚部または隆起部を含むことができる。
環状部材は、第２の材料で作られていてもよく、また、第１の材料の上または上方にめっきされた第２の材料を有する第１の材料で作られていてもよい。第２の材料は、環状部材のすべての表面に完全にめっきされてもよく、または実施形態では、環状部材の、支持ペデスタルと接触する表面上に配置されなくてもよい。例えば、環状部材５０５の外部領域５０７は、第２の材料を含んでもよいが、ペデスタル５６５と接触する内部領域５０８は、第２の材料を含まなくてもよい。このような構成において、動作中の反りの可能性の低下、及びペデスタル５６５の外部領域５６９に沿ってより均一な温度プロファイルを維持する能力を含む、いくつかの利点が得られる。
開示された実施形態では、環状部材は、破線５１０によって示されるように、ペデスタルの外部領域５６９に沿って、または外縁に沿って、ステム５７０に向かって延びることができる。環状部材をペデスタルの外側表面または外部領域に沿って延ばすことによって、第２の材料のより多くの表面積を、処理領域５３３に供給される前駆体および／またはプラズマ放出物との相互作用のために提供することができる。基板が支持プラッタ５６７上に提供される場合、基板は外部領域５６９に向かって延び、環状部材５０５と接触してもしなくてもよい。例えば、環状部材は、内部領域５６８などの中心に位置する基板領域の広がりを越えて縁領域で支持ペデスタルと結合されてもよい。例えば、直径３００ｍｍの基板は、内部領域５６８内にのみ置かれ、環状部材５０５に接近しているが接触していなくてもよい。任意の基板寸法をチャンバ構成に基づいて利用することができ、より大きいまたはより小さいペデスタル上のより大きいまたはより小さい基板であって、環状部材がサイズにかかわらず基板と接触しないなどの、議論された利益を維持する本システムへの調整が包含されることが理解されるべきである。
いかなる特定の理論にも拘束されるつもりはないが、可能性のある、または含まれているメカニズムの議論が有用であり得る。前述したように、多くのエッチング工程は、基板上の材料または基板自体と相互作用するために、フッ素またはフッ素含有前駆体を利用する。フッ素前駆体は、前述のようにプラズマ中で励起されてもよく、プラズマ放出物が、基板又は基板上の材料との接触および／または相互作用のために、処理チャンバに供給されてもよい。前駆体またはプラズマ放出物の流れプロファイルのために、基板の外側、すなわちチャンバの外側領域に近接する縁領域が、追加のエッチャント材料にさらされ得る。しかし、フッ素またはフッ化物ラジカルは、フッ素ガスへの再結合を可能にする金属表面に対する親和性を含むことがある。フッ化物ラジカルは、化学エッチングを行うために非常に反応性であり得るが、再結合されたフッ素ガスは、反応性でないか、または反応性がより低いことがあり、基板と相互作用しないように処理領域から吸い出され得る。
例えば、環状部材、または環状部材の第２の材料は、材料に対するフッ素の親和性に基づいて選択されてもよい。多くのチャンバ構成要素は、同じ材料またはアルミニウムなどの第１の材料であり得るので、第２の材料は、第１の材料に関する特性に基づいて選択され得る。例えば、フッ素は、アルミニウムに対してある親和性を有する。フッ素は、例えばニッケルまたは白金を含む他の金属に対してより高い親和性を有する。したがって、第２の材料は、フッ素が第１の材料に対してよりも高い親和性を有する材料であってもよい。このようにして、チャンバ内のある量のフッ化物ラジカルが、自然に第２の材料に向かって流れ得る。ある領域内のラジカルの数が増加し、および／またはラジカル種が第２の材料と会合すると、フッ化物ラジカルは、互いにまたは他の通過するラジカル種と再結合して、システムから除去され得るフッ素またはフッ素化ガスを生成し得る。これは、チャンバの縁領域においてまたは基板の縁領域に沿ってフッ化物ラジカルの濃度を低下させる可能性があり、これにより、基板の縁領域に沿ってエッチング速度を比例的に減少させることができる。
したがって、フッ素がより高い親和性を有する第２の材料を、ペデスタル上の基板の縁領域に近接する環状部材に含めることによって、第２の材料は、縁領域に沿ってエッチング速度を減少させるのを助長することができる。さらに、このような調整は、中心基板領域のエッチング速度に影響を与えないか、または最小限の影響を及ぼし得る。従って、所望の全体的なエッチング速度が維持されながら、縁部エッチング速度を低減することによって、全体的なエッチングプロセスは、基板の表面全体にわたって相対的または実質的に均一にされ得る。
システムおよび／またはチャンバ構成要素内の追加調整は、この効果をさらに助長し得る。これらの調整は、材料の選択と併せて行うことができるが、全ての実施形態に含まれるものではない。例えば、環状部材５０５は、支持ペデスタル５６５の上面の上方に垂直に延在してもよい。図示されているように、支持プラッタ５６７は、上面、すなわち基板が載せられるように構成された面を含むことができる。環状部材５０５は、この上面より上又は基板の高さよりも上の高さにあるように構成されてもよい。そのような改変は、供給された前駆体またはプラズマ放出物の流れプロファイルに影響を与え、基板の縁領域での相互作用を減少させ得るか、またはフッ化物ラジカルの再結合を可能にする相互作用のための面積を増加させ得る。
温度もまた、第１および第２の材料に対するフッ素親和性に影響を及ぼし得る。例えば、より低い動作温度は、金属間または他の材料間の親和性の差を減少させることがあり、これは、本技術の効果を低下させる可能性がある。しかしながら、基板を比較的低温に維持しながら、多くの処理作業を行うことができる。本技術の追加の態様により、親和性の差を回復させることができる。
開示された実施形態では、エッチングプロセスは、本技術の追加の態様が使用されないように、約５０℃以上、約８０℃以上、約１００℃以上、約１５０℃以上などの温度で実行されてもよい。開示された実施形態はまた、第１の材料と第２の材料との間の親和性の差に影響を及ぼし得る、約１００℃以下、約８０℃以下、約５０℃以下、約３５℃以下、約１０℃以下などの温度で実施され得る。本技術の１つ以上の態様が、親和性の差を回復するために、環状リングの代わりに組み込まれるか、または使用され得る。
図５に示すように、処理領域５３３は、側壁５２１，５２２によって少なくとも部分的に画定され得る。側壁は、第２の材料を含むことができ、および／または開示された実施形態では加熱エレメントを含むことができる。図示されているように、加熱エレメント５２０は、側壁５２１に含まれてもよいし、側壁５２１に埋め込まれてもよい。ヒータは、側壁の任意の部分に配置することができ、いくつかの実施形態では、シャワーヘッド５２５の近くに含めることができる。ヒータは、支持ペデスタル５６５またはペデスタル上にある基板への衝撃を制限しながら、環状部材５０５の第２の材料を加熱するように構成することができる。前述したように、支持ペデスタルは、動作中に基板を加熱または冷却するための流体チャネルまたは埋め込みヒータ５７４などのペデスタル温度制御部を含むことができる。温度制御部５７４は、図５でチャネルとして示されているが、抵抗加熱エレメントを含む様々な制御部、および複数のチャネル、コイルなどを含む様々なチャネル構成を包含すると理解されるべきである。
加熱エレメント５２０を有する実施形態では、ペデスタル温度制御部は、ペデスタルを第１の温度に維持するように構成され、側壁加熱エレメント５２０は、環状部材を第２の温度に維持するように構成されてもよい。例えば、第２の温度は、実施形態において、第１の温度よりも高くてもよい。第１の材料に対して第２の材料のフッ素親和性を調整するために、様々な温度効果が含まれ得る。例えば、第１の温度は、約２００℃以下、約１５０℃以下、約１００℃以下、約８０℃以下、約５０℃以下、約３５℃以下、約１０℃以下、約−１０℃以下などであってもよい。第２の温度は、約４０℃以上、約５０℃以上、約８０℃以上、約１００℃以上、約１５０℃以上、約２００℃以上などであってもよく、その結果、環状部材の第２の材料とペデスタルの内部領域５６８との間の温度差は、約１０℃以上、約２０℃以上、約３０℃以上、約４０℃以上、約５０℃以上、約６０℃以上、約８０℃以上、約１００℃以上、約１５０℃以上など、またはそれ以上であってもよい。温度差を調整することによって、親和性効果を調整して、基板表面にわたるエッチング速度を標準化するために、縁部エッチング速度の特定の調整を生成することができる。
加熱エレメント５２０は、その動作効率を最大にする若しくは増加させる、または環状部材の第２の材料に対するその効果を最大にするように、側壁５１５内に配置されてもよい。実施形態では、加熱エレメント５２０は、約１インチ以内、０．５インチ以内、０．０５インチ以内、０．０１インチ以内などで、シャワーヘッド５２５に近接して含まれてもよい。シャワーヘッドの近くに加熱エレメントを設けることにより、側壁５２２などの他の側壁またはチャンバ構成要素によって吸収されるエネルギーの量を減少させることができ、環状部材５０５の第２の材料に供給されるエネルギーの量を高めることができる。
実施形態はまた、例えば、図２Ａおよび図５に示されるような遠隔プラズマ領域および半導体処理領域を含むことができる。処理領域は、遠隔プラズマ領域と流体的に連結されてもよく、シャワーヘッド５２５、前述した第１の材料を含むことができる基板支持ペデスタル５６５、および側壁または側壁部分５２１のそれぞれによって少なくとも部分的に画定されてもよい。側壁部分５２１は、実施形態では、追加の側壁部分５２２と結合されているが、追加の側壁部分５２２とは別個であってもよい。側壁５２１は、第１の材料とは異なる第２の材料、例えば第２の材料としてのニッケルまたは白金、第１の材料としてのアルミニウムを含む内部ライナを含むことができる。ライナは、側壁部分の一部または全部に配置されてもよく、チャンバ処理領域を少なくとも部分的に画定する表面などの内部チャンバ表面上に配置されてもよい。しかしながら、異なる第１の材料が利用されてもよく、第２の材料は、第１の材料に対するフッ素親和性に基づいていてもよく、第２の材料は、第１の材料に対するよりも高いフッ素親和性に基づいて選択されてもよい、ということを理解されたい。したがって、任意の数の材料が、第１および第２の材料に使用されてよく、本技術に包含される。
側壁５２１は、第２の材料を含むか、または第２の材料から構成されてもよく、または実施形態において、側壁は、第２の材料を含む内部ライナ５１５を含んでもよい。チャンバはまた、側壁５２１に埋め込まれた加熱エレメント５２０などの抵抗ヒータを含むことができる。先に論じたように、抵抗ヒータは、シャワーヘッドに近接した側壁内に含まれてもよいし、側壁内に配置されてもよい。ライナ５１５は、チャンバ処理領域の任意の部分に沿って含まれてもよく、側壁５２１に沿ってなど、チャンバ内部の周りに円周方向に延在してもよい。また、ライナは、支持ペデスタルに関連して組み込まれてもよく、または支持ペデスタルが処理工程中に配置され得るところに組み込まれてもよい。例えば、ペデスタル５６５は、動作中に、基板が配置され得るプラットフォーム５６７をシャワーヘッド５２５までの又はシャワーヘッド５２５からのある距離内に配置するように動かされるステム５７０に連結されるプラットフォーム５６７を含むことができる。
ライナ５１５は、プラットフォームがエッチングプロセス中などのその動作位置にあるとき、シャワーヘッドから側壁５２１に沿って垂直に、結合したプラットフォーム５６７とステム５７０との間の交差部に近接する距離まで側壁上に配置されてもよい。多くのペデスタルは、シャワーヘッドに向かって及びシャワーヘッドから垂直方向に移動可能であり、動作中にシャワーヘッドに近づけられるが、その距離は、大きく、小さく、又はどのプロセスでも調整され得る。例えば、ペデスタルは、チャンバ内に供給された基板をより容易に受け取るために、より低い位置にあってもよく、その後、処理のためにシャワーヘッドに向けて持ち上げられてもよい。図５に示すように、ペデスタルが基板の処理のための位置にあるとき、ライナ５１５は、シャワーヘッド５２５の交差部、またはシャワーヘッドを側壁から隔離する誘電体（図示せず）から、プラットフォーム５６７がステム５７０と交差するところの近く、交差するところ、またはそれより下の距離まで側壁５２１に沿って配置することができる。
第２の材料を含むライナは、環状部材５０５と同様の方法で働くことができ、環状部材と組み合わせて、または実施形態において環状部材の代わりに使用することができる。ペデスタルはまた、基板温度を制御するための、流体チャネル５７４などの温度制御部を含むことができる。温度制御部は、抵抗ヒータ５２０によって維持される側壁５２１の温度より少なくとも約２０℃以上低い温度に、プラットフォーム５６７上の基板を維持するように構成することができる。動作中、ライナは、第２の材料に対して親和性を有するフッ化物を引き付け、フッ素またはフッ素化ガスへの再結合を可能にし、前述したように縁部エッチング速度を低減して、基板の表面にわたってより均一なエッチング速度を提供することができる。さらに、第２の材料をライナに含めることにより、第２の材料の温度は、加熱エレメント５２０およびペデスタル温度制御部の両方によって影響される温度を有する環状部材よりも容易に制御することができる。
図２Ａおよび図５に記載された構成要素に関連して前述したチャンバが、基板エッチング工程を含む幾つかのプロセスまたは工程を実行するために使用され得る。図６には、基板をエッチングするための、そのような１つの方法６００が示されている。この方法は、チャンバに基板を提供することと、チャンバ内で実行され得る任意の前処理作業とを含むことができる。工程６１０において、プラズマ放出物が、シャワーヘッドを通って半導体処理領域に供給されてもよい。支持ペデスタル上にある基板を、工程６２０でプラズマ放出物と接触させることができる。基板支持ペデスタルは、第１の材料を含むことができ、ペデスタルの遠位部分に結合された環状部材を含んでもよい。環状部材は、前述のように、第１の材料とは異なる第２の材料を含むことができる。工程６３０は、実施形態において約５０℃を超える温度を含み得る第１の温度に環状部材を維持することを含むことができる。これは、自然のプロセス温度が約５０℃を超える場合または前述の任意の数の加熱機構を利用することを含む任意の数の方法で、実施することができる。任意選択で、工程６４０は、エッチングのためのプロセス条件に基づいて基板温度を第２の温度に維持することを含むことができ、第２の温度は、約１５０℃以下であり得る。工程は、前述したような他の任意の温度または範囲で実行されてもよいことを理解されたい。
追加のまたは代替の方法は、チャンバ側壁に関連して先に説明したようなライナ、ならびに側壁内に埋め込まれた加熱エレメントを有するチャンバを利用することを含むことができる。これらの方法は、基板上の直接的なプラズマ作用とは対照的に、化学反応を利用するように実施されてもよい。例えば、チャンバ処理領域は、接触工程６２０中に実質的にプラズマを欠いていてもよい。これは、遠隔プラズマを利用し、前述したようにプラズマ放出物を処理領域に供給することによって生じ得る。
これらの方法は、図７Ａおよび図７Ｂのデータチャートによって示されるように、基板の表面にわたってより均一なエッチングを実行することを可能にすることができる。図７Ａは、本技術の環状リングまたは側壁ライナのない処理チャンバ内での３００ｍｍウエハのエッチング工程を示す。図示されているように、Ｘ軸によって示されるウエハの外部領域に沿って、エッチング速度が大きく上昇し、表面全体にわたるエッチングの不均一性が生じる。しかしながら、図７Ｂは、基板の表面全体にわたって均一なエッチング速度を可能にする前述のような環状部材を含む。さらなる結果が、環状部材と併せて、または環状部材の代わりに、ライナおよび／または加熱エレメントによって実現され得る。開示された技術では、基板の縁部エッチング速度は、基板の内部領域または中心領域のエッチング速度の約＋／−１０％以内に維持することができ、中心エッチング速度の約＋／−７％、５％、３％、１％等以内に維持することができる。さらに、縁部エッチング速度の問題を緩和するのに役立つが、中心領域エッチング速度を有害に抑制し、これにより、待機時間、前駆体消費、および長期化した工程の運用コストを増加させる可能性がある多くの処理作業の変更とは対照的に、中心エッチング速度を所望の速度に維持することができ、本技術によって抑制されない。
前述の説明では、説明の目的で、本技術の様々な実施形態の理解を提供するために、多くの詳細が述べられている。しかしながら、特定の実施形態は、これらの詳細の一部を伴わずに、または追加の詳細と共に実施され得ることは、当業者には明らかであろう。
いくつかの実施形態を開示したが、実施形態の精神から逸脱することなく、様々な変更、代替構成、および同等物を使用できることが、当業者に理解されるであろう。さらに、幾つかの周知のプロセスおよび要素は、本技術を不必要に不明瞭にすることを避けるために、記載されていない。したがって、上記の説明は、本技術の範囲を限定するものと解釈すべきではない。さらに、方法またはプロセスは、連続的または段階的に記載され得るが、工程は並行して、または列挙された順序とは異なる順序で実行されてもよいことを理解されたい。
ある範囲の値が提供される場合、文脈上明確に他の指示がされない限り、下限の単位の最小部分まで、その範囲の上限と下限との間に位置している各値もまた、明確に開示されることが、理解される。記載された範囲内の任意の記載された値または記載されていない間に位置する値と、その記載された範囲内の任意の他の記載されたまたは間に位置する値との間の任意のより狭い範囲が包含される。これらのより小さい範囲の上限および下限は、独立してその範囲に含まれることもあるし、除外されることもあり、上限および下限のいずれかが該小さい範囲に含まれ、またはどちらも含まれない、または両方が含まれる各範囲も、記載された範囲で明確に除外された任意の上限または下限に従って、本技術の範囲内に包含される。記載された範囲が上限と下限のうちの１つまたは両方を含む場合、それら含まれる上限と下限のいずれかまたは両方を除く範囲も含まれる。
本明細書および添付の特許請求の範囲で使用される場合、単数形「ａ」、「ａｎ」および「ｔｈｅ」は、文脈上他に明確に指示されない限り、複数の参照を含む。したがって、例えば、「開孔部」への言及は、複数のそのような開孔部を含み、「プレート」への言及は、１つ以上のプレートおよび当業者に知られているその均等物への言及を含む、等々である。
また、本明細書および以下の特許請求の範囲で使用される場合、「含む（ｃｏｍｐｒｉｓｅ）」、「含む（ｃｏｍｐｒｉｓｉｎｇ）」、「含む（ｃｏｎｔａｉｎ）」、「含む（ｃｏｎｔａｉｎｉｎｇ）」、「含む（ｉｎｃｌｕｄｅ）」、「含む（ｉｎｃｌｕｄｉｎｇ）」といった言葉は、記載された特徴、整数、構成要素、または工程の存在を特定することを意図しているが、１つ以上の他の特徴、整数、構成要素、工程、動作またはグループの存在または追加を排除するものではない。
Claims (19)
- 半導体処理チャンバであって、
遠隔プラズマ領域と、
前記遠隔プラズマ領域と流体的に連結された処理領域とを備え、
前記処理領域が、支持ペデスタル上に基板を収容するように構成され、
前記支持ペデスタルが、前記ペデスタルの内部領域に第１の材料を含み、
前記支持ペデスタルが、前記ペデスタルの遠位部分と結合された環状部材を含み、
前記環状部材が、前記第１の材料とは異なる第２の材料を含む、半導体処理チャンバ。 - 前記環状部材が、前記第２の材料でめっきされた第１の材料を含む、請求項１に記載の半導体処理チャンバ。
- 前記第２の材料が、前記支持ペデスタルと接触する前記環状部材の表面に配置されていない、請求項２に記載の半導体処理チャンバ。
- 前記環状部材が、前記ペデスタルのステム領域に向かって前記ペデスタルの外縁に沿って延在する、請求項１に記載の半導体処理チャンバ。
- 前記支持ペデスタルが、上面を備え、前記環状部材が、前記支持ペデスタルの前記上面より上に垂直に延在する、請求項１に記載の半導体処理チャンバ。
- 前記環状部材が、中心に位置する基板領域の広がりを越える縁領域で前記支持ペデスタルと結合される、請求項１に記載の半導体処理チャンバ。
- フッ素が、前記第１の材料よりも前記第２の材料に対して高い親和性を有する、請求項１に記載の半導体処理チャンバ。
- 前記第２の材料が、ニッケル又は白金を含む、請求項７に記載の半導体処理チャンバ。
- 前記処理領域が、側壁によって少なくとも部分的に画定され、前記側壁が、前記第２の材料を含む、請求項１に記載の半導体処理チャンバ。
- 側壁加熱エレメントが、シャワーヘッドに近接して前記側壁に埋め込まれている、請求項１に記載の半導体処理チャンバ。
- 前記支持ペデスタルが、ペデスタル温度制御部を更に備える、請求項１０に記載の半導体処理チャンバ。
- 前記ペデスタル温度制御部が、前記ペデスタルを第１の温度に維持するように構成され、前記側壁加熱エレメントが、前記環状部材を第２の温度に維持するように構成され、前記第２の温度が、前記第１の温度よりも高い、請求項１１に記載の半導体処理チャンバ。
- 半導体処理チャンバであって、
遠隔プラズマ領域と、
前記遠隔プラズマ領域と流体的に連結された処理領域とを備え、
前記処理領域が、シャワーヘッド、第１の材料を含む基板支持ペデスタル、及び側壁のそれぞれによって少なくとも部分的に画定され、
前記側壁が、前記第１の材料とは異なる第２の材料を含むライナを内部チャンバ表面上に含み、
抵抗ヒータが前記側壁に埋め込まれている、半導体処理チャンバ。 - 前記ペデスタルが、ステムに結合されたプラットフォームを備え、前記ライナが、前記シャワーヘッドから前記結合されたプラットフォームとステムとの間の交差部に近接する距離まで前記側壁上に配置される、請求項１３に記載の半導体処理チャンバ。
- 前記ペデスタルが、温度制御部を備え、前記温度制御部が、前記抵抗ヒータによって維持される前記側壁の温度よりも少なくとも２０℃低く基板温度を維持するように構成される、請求項１３に記載の半導体処理チャンバ。
- 前記抵抗ヒータが、前記シャワーヘッドに近接して前記側壁内に配置される、請求項１３に記載の半導体処理チャンバ。
- 基板をエッチングする方法であって、
プラズマ放出物をシャワーヘッドを通って半導体処理領域に供給することと、
支持ペデスタル上にある基板を前記プラズマ放出物と接触させることであって、前記支持ペデスタルは、第１の材料を含み、前記支持ペデスタルは、前記ペデスタルの遠位部分と結合された環状部材を備え、前記環状部材は、前記第１の材料とは異なる第２の材料を含む、接触させることと、
前記環状部材を約５０℃より高い温度に実質的に維持することと
を含む方法。 - 前記基板の縁部エッチング速度は、前記基板の中心エッチング速度の約５％以内である、請求項１７に記載の方法。
- 前記処理領域は、前記接触工程中に実質的にプラズマがない、請求項１７に記載の方法。
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| US14/554,250 US11637002B2 (en) | 2014-11-26 | 2014-11-26 | Methods and systems to enhance process uniformity |
| PCT/US2015/059660 WO2016085638A1 (en) | 2014-11-26 | 2015-11-09 | Methods and systems to enhance process uniformity |
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| KR20170088394A (ko) | 2017-08-01 |
| TW201935595A (zh) | 2019-09-01 |
| TW201624589A (zh) | 2016-07-01 |
| WO2016085638A1 (en) | 2016-06-02 |
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