JP7464642B2 - マルチゾーンガス分配システム及び方法 - Google Patents
マルチゾーンガス分配システム及び方法 Download PDFInfo
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- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 77
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 57
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- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 3
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 3
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H01J37/32449—Gas control, e.g. control of the gas flow
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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Description
[0001] 本出願は、2017年12月19日に出願された米国仮特許出願第15/847,411号の利益を主張し、当該仮特許出願は、あらゆる目的のためにその全体が、参照によって本明細書に組み込まれている。
Claims (12)
- 第1のマニホールドチャネル及び第2のマニホールドチャネルを画定する分配マニホールド、
前記分配マニホールドに連結された分配プレートであって、第1のチャネルと、前記第1のチャネルから流体的に分離された第2のチャネルとを画定する、分配プレート、
プラズマが生成されるプラズマ領域の中へガスを通過させるように構成された貫通孔を画定する面板、
前記面板に平行なシャワーヘッドであって、前記面板と前記シャワーヘッドとの間に前記プラズマ領域が画定される、シャワーヘッド、並びに
前記分配プレートと前記面板との間に配置され、前記分配プレート及び前記面板の各々と接触するブロッカプレートであって、前記ブロッカプレートは、前記ブロッカプレート内の内側凹部と、前記内側凹部の半径方向外側において前記内側凹部の周囲に広がる、前記ブロッカプレート内の外側凹部とを画定し、前記内側凹部と前記外側凹部との間に、前記ブロッカプレートにより分離壁が画定されている、ブロッカプレート
を備える、基板処理システム。 - 前記ブロッカプレートが単一のプレートを含む、請求項1に記載の基板処理システム。
- 前記ブロッカプレートの前記内側凹部は、前記分配プレートにより画定される前記第1のチャネルに流体的にアクセス可能であり、前記外側凹部は、前記分配プレートにより画定される前記第2のチャネルに流体的にアクセス可能である、請求項1に記載の基板処理システム。
- 前記ブロッカプレートが、前記分配プレートに隣り合う第1の表面、及び前記第1の表面の反対側の第2の表面によって特徴付けられ、前記第2の表面は前記面板に隣り合い、前記内側凹部及び前記外側凹部は、前記ブロッカプレートの前記第1の表面内に画定されている、請求項1に記載の基板処理システム。
- 前記内側凹部が第1の内側凹部であり、前記外側凹部が第1の外側凹部であり、前記ブロッカプレートが、前記ブロッカプレートの前記第2の表面内に第2の内側凹部をさらに画定し、前記ブロッカプレートが、前記ブロッカプレートの前記第2の表面内に第2の外側凹部をさらに画定している、請求項4に記載の基板処理システム。
- 第1のマニホールドチャネル及び第2のマニホールドチャネルを画定する分配マニホールド、
前記分配マニホールドに連結された分配プレートであって、第1のチャネルと、前記第1のチャネルから流体的に分離された第2のチャネルとを画定する、分配プレート、
プラズマが生成されるプラズマ領域の中へガスを通過させるように構成された貫通孔を画定する面板、並びに
前記分配プレートと前記面板との間に配置され、前記分配プレート及び前記面板の各々と接触するブロッカプレートであって、前記ブロッカプレートは、前記分配プレートに隣り合う第1の表面、及び前記第1の表面の反対側の第2の表面によって特徴付けられ、前記第2の表面は前記面板に隣り合い、前記ブロッカプレートは、前記ブロッカプレートの前記第1の表面内において、第1の内側凹部と、前記第1の内側凹部の半径方向外側において前記第1の内側凹部の周囲に広がる第1の外側凹部とを画定し、前記第1の内側凹部と前記第1の外側凹部との間に、前記ブロッカプレートにより分離壁が画定されており、前記ブロッカプレートはさらに、前記ブロッカプレートの前記第2の表面内において、第2の内側凹部と第2の外側凹部とを画定している、ブロッカプレート
を備える、基板処理システム。 - 前記分離壁が第1の分離壁であり、前記ブロッカプレートが、前記第2の内側凹部と前記第2の外側凹部との間に第2の分離壁をさらに画定している、請求項5又は6に記載の基板処理システム。
- 前記ブロッカプレートの前記外側凹部が、前記ブロッカプレートにより、半径方向外側の縁部に画定されている、請求項1に記載の基板処理システム。
- 第1のマニホールドチャネル及び第2のマニホールドチャネルを画定する分配マニホールド、
前記分配マニホールドに連結された分配プレートであって、第1のチャネルと、前記第1のチャネルから流体的に分離された第2のチャネルとを画定する、分配プレート、
プラズマが生成されるプラズマ領域の中へガスを通過させるように構成された貫通孔を画定する面板、
前記面板に平行なシャワーヘッドであって、前記面板と前記シャワーヘッドとの間に前記プラズマ領域が画定される、シャワーヘッド、並びに
前記分配プレートと前記面板との間に配置されたブロッカプレートであって、前記ブロッカプレートは、前記分配プレートに隣り合う第1の表面、及び前記第1の表面の反対側の第2の表面によって特徴付けられ、前記ブロッカプレートは、前記ブロッカプレートの前記第1の表面内の内側凹部と、前記内側凹部の半径方向外側において前記内側凹部の周囲に広がる、前記ブロッカプレートの前記第1の表面内の外側凹部とを画定し、前記内側凹部と前記外側凹部との間に、前記ブロッカプレートにより分離壁が画定されている、ブロッカプレート
を備える、基板処理システム。 - 前記ブロッカプレートは、該ブロッカプレートの半径方向外側の縁部において、前記分配プレート及び前記面板に連結されている、請求項9に記載の基板処理システム。
- 前記プラズマ領域からみて前記シャワーヘッドの反対側において、前記シャワーヘッドに隣接した基板処理領域を更に備える、請求項1から5及び8から10のいずれか一項に記載の基板処理システム。
- アノードとカソードの間にRF電力を印加することにより、前記プラズマ領域内において前記プラズマが生成され、
前記面板および前記シャワーヘッドの一方が前記アノードであり、前記面板および前記シャワーヘッドの他方が前記カソードである、請求項1から5及び8から11のいずれか一項に記載の基板処理システム。
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KR102366323B1 (ko) | 2022-02-23 |
TWI721342B (zh) | 2021-03-11 |
TWI836183B (zh) | 2024-03-21 |
JP2021507521A (ja) | 2021-02-22 |
TW201928109A (zh) | 2019-07-16 |
CN111492469B (zh) | 2023-11-10 |
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