TWI721342B - 多區域氣體分配系統及方法 - Google Patents

多區域氣體分配系統及方法 Download PDF

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TWI721342B
TWI721342B TW107144496A TW107144496A TWI721342B TW I721342 B TWI721342 B TW I721342B TW 107144496 A TW107144496 A TW 107144496A TW 107144496 A TW107144496 A TW 107144496A TW I721342 B TWI721342 B TW I721342B
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沙拉傑特 辛
肯尼士Ｄ 夏茲
永崙 曹
馬林 威傑庫恩
迪米崔 凱爾西斯
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美商應用材料股份有限公司
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Abstract

本技術包含改良式氣體分配設計，以在半導體處理作業期間形成均勻電漿，或用於處理半導體處理腔室的內部。雖然習知氣體分配組件可接收要被分配入電漿區域中的特定反應劑或反應劑比例，本文所述技術允許對反應劑輸入分配進行改良式控制。技術允許使反應劑個別流入電漿的不同區域，以抵銷所觀察到的製程均勻度中的任何異常。可將第一前驅物傳遞至在基板/底座中心上方的電漿中心，同時可將第二前驅物傳遞至在基板/底座外部部分上方的電漿外部部分。藉此，位於底座上的基板可體驗到跨整體表面的更均勻的蝕刻或沈積輪廓。

Description

多區域氣體分配系統及方法
本技術相關於製造半導體的部件與設備。更特定而言，本技術相關於氣體分配組件與作業方法。
藉由在基板表面上產生具有錯綜複雜圖案的材料層的製程，而使積體電路的製造成為可能。在基板上產生圖案化材料，需要用於形成與移除材料的受控方法。用於激勵反應劑的電漿的均勻度，可直接衝擊最終產品。遠端電漿中的電漿均勻度擾動，可造成基板邊緣附近相對於中心的區域具有高蝕刻速率或沈積速率，反之亦然。已藉由調整基板表面與噴淋頭之間間距來控制蝕刻均勻度，但蝕刻速率也被改變。取決於沿著基板表面的變異程度，可因蝕刻製程所產生的不一致性而發生裝置失效。
此外已發現到，特別是在存在氟與其他電負性物質之下，電漿均勻度會顯現不穩定性。電負性物質可不輕易放棄電子，這使得維持對稱的電漿更為困難。沿著基板表面為對稱的電漿可使得蝕刻製程更為均勻。
因此需要改良的系統與方法，以產生高品質的裝置與結構。本技術解決了該等與其他的需求。
本技術包含改良式氣體分配設計，以在半導體處理作業期間形成均勻電漿，或用於處理半導體處理腔室的內部。雖然習知氣體分配組件可接收要被分配入電漿區域中的特定反應劑或反應劑比例，本文所述技術允許對反應劑輸入分配進行改良式控制。技術允許使反應劑個別流入電漿的不同區域，以抵銷所觀察到的製程均勻度中的任何異常。可將第一前驅物傳遞至在基板/底座中心上方的電漿中心，同時可將第二前驅物傳遞至在基板/底座外部部分上方的電漿外部部分。藉此，可執行改良式作業，因為位於底座上的基板可體驗到跨整體表面的更均勻的蝕刻或沈積輪廓。
在一些具體實施例中，區帶分配岐管具有兩個個別的前驅物通道，前驅物被供應至區帶分配板的兩個個別區域。區帶分配板可提供第一氣體至區帶阻隔板的內部分，並可提供第二氣體至區帶阻隔板的外部分。內部分可具有內噴淋頭，內噴淋頭在區帶阻隔板內定中心。內噴淋頭可為圓形。外部分可具有外噴淋頭，外噴淋頭沿著區帶阻隔板定中心，並可具有圍繞內噴淋頭的環形形狀。在經組裝而使得所有元件彼此固定之後，第一氣體與第二氣體在通過區帶阻隔板之前保持分離。
本文所說明的裝置的益處，包含對輸送至本端或遠端電漿中心的氣體，調整相較於輸送至電漿外部分的氣體的能力。基板處理電漿非常稀薄，但仍需要在基板表面上或在基板處理系統內部周圍（以進行清潔程序）提供均勻的淨效應。蝕刻和清洗時常仰賴高電負性反應物，諸如含氟前驅物。氟會加劇電漿均勻性問題，因為氟具有很高的電負性。氟離子非常難以產生，因此在稀薄寬廣電漿區域中能夠維持電漿的電子很稀少–一些區域可維持電子擊穿級聯到損害電漿區域的其他部分中的電漿健康。本文說明的硬體，可提供使電漿更均勻的益處，及/或可提供使得整個電漿區域（跨越垂直於薄維度的維度）的處理（例如，移除速率）更均勻的益處。在一些情況下，本文描述的硬體甚至可以用於避免偏斜的電漿，偏斜電漿將會塌陷到電漿區域的一側。因此，本文說明的硬體與方法可用於形成同心電漿，這有益於電漿控制效果並亦使得處理更為均勻。
所揭示的具體實施例包括基板處理系統。基板處理系統包含區帶分配岐管，區帶分配岐管具有第一岐管通道與一第二岐管通道。基板處理系統進一步包含區帶分配板，區帶分配板固定至區帶分配岐管。區帶分配板具有內區通道與外區通道，內區通道經配置以接收來自第一岐管通道的第一氣體，外區通道經配置以接收來自第二岐管通道的第二氣體。基板處理系統進一步包含區帶阻隔板，區帶阻隔板固定至區帶分配板。區帶阻隔板具有頂部內凹槽和頂部外凹槽，頂部內凹槽經配置成從內區通道接收第一氣體，頂部外凹槽經配置以從外區通道接收第二氣體。區帶阻隔板進一步包含底部內凹槽與底部外凹槽，底部內凹槽透過內噴淋頭部分流體耦接至頂部內凹槽，底部外凹槽透過外噴淋頭部分流體耦接至頂部外凹槽。基板處理系統還可包括固定到區帶阻隔板的面板，面板具有通孔，通孔被配置成使第一氣體和第二氣體進入電漿區域。
外區通道可以包括形成在區帶分配板的頂部中的溝槽。區帶分配板可包含複數個底孔，複數個底孔沿著以區帶阻隔板為中心圍繞的圓形平均設置。溝槽可以被配置為在起始點從第二歧管通道接收第二氣體。對於複數個底孔中之每一者，從起始點沿著溝槽到複數個底孔中之每一者的路徑長度可以是相同的。複數個底孔可包括至少八個底孔。區帶分配歧管、區帶分配板和區帶阻隔板可以配置成使得第一氣體和第二氣體在進入電漿區域之前不會混合。基板處理系統可進一步包含噴淋頭，噴淋頭平行於面板。電漿區域可設置在面板與噴淋頭之間。電漿區域可同時鄰接面板與噴淋頭之每一者。基板處理系統可進一步包含基板處理區域，基板處理區域在噴淋頭的與電漿區域相對的一側上與噴淋頭接界。電漿區域可為經配置以容納欲處理之基板的本端電漿區域。區帶分配板和區帶阻隔板可以成形為盤狀且為同軸。第一岐管通道可包含窄通道部分與寬通道部分，寬通道部分設置為較接近區帶分配板。窄通道部分具有第一直徑，寬通道部分具有大於第一直徑的第二直徑。第一岐管通道可經配置以允許第一氣體在進入頂部內凹槽之前擴展並混合。
所揭示的具體實施例包括處理方法。方法包含在陽極與陰極之間施加RF功率。陽極與陰極為平面且平行，並在陽極與陰極之間設置電漿區域。陽極與陰極之每一者與電漿區域接界或鄰接。方法包含藉由使含氫前驅物流入電漿區域的中心，而形成含氫電漿。方法包含藉由進一步使含氟前驅物流入電漿區域，而形成含氫氟電漿。含氫前驅物與含氟前驅物首先彼此遭遇，並在電漿區域中結合。方法包含藉由使含氫前驅物停止流入電漿區域，而形成含氟電漿。
處理方法可處理基板或基板處理腔室的內部表面。陽極可為面板（或噴淋頭），陰極可為噴淋頭（或面板）。基板處理區域可以設置在噴淋頭的與電漿區域相對的一側。在另一具體實施例中，陽極可為噴淋頭（或基板底座），且陰極可為基板底座（或噴淋頭）。基板處理區域可被設置在陽極與陰極之間。基板處理區域可同時與陽極與陰極接界或鄰接。陽極、陰極與電漿區域可為圓形。含氫前驅物可包含氫（H2 ）和氨（NH3 ）中的一種。含氟前驅物可包含三氟化氮（NF3 ）。
所揭示的具體實施例包括基板處理系統。基板處理系統包含區帶分配岐管，區帶分配岐管具有第一岐管通道與第二岐管通道。基板處理系統進一步包含區帶分配板，區帶分配板固定至區帶分配岐管。區帶分配板具有內區通道與外區通道，內區通道經配置以接收來自第一岐管通道的第一氣體，外區通道經配置以接收來自第二岐管通道的第二氣體。基板處理系統包含區帶阻隔板，區帶阻隔板固定至區帶分配板。區帶阻隔板具有中心通孔與頂部外凹槽，中心通孔經配置成從內區通道接收第一氣體，頂部外凹槽經配置以從外區通道接收第二氣體。區帶阻隔板還可包括底部外凹槽，底部外凹槽通過外噴淋頭部分流體耦接到頂部外凹槽。半導體處理系統進一步包含面板，面板固定至區帶阻隔板。面板具有通孔，通孔經配置以使第二氣體輸入電漿區域。區帶阻隔板可以具有中央面板孔，中央面板孔配置成從中心通孔接收第一氣體並將第一氣體傳遞到電漿區域中。
區帶分配歧管、區帶分配板和區帶阻隔板可以配置成使得第一氣體和第二氣體在進入電漿區域之前不會混合。半導體處理系統可進一步包含噴淋頭，噴淋頭平行於面板。電漿區域可設置在面板與噴淋頭之間。電漿區域可同時鄰接面板與噴淋頭之每一者。半導體處理系統可進一步包含基板處理區域，基板處理區域在噴淋頭的與電漿區域相對的一側上與噴淋頭接界。電漿區域可為經配置以容納欲處理之基板的本端電漿區域。區帶分配板可包含複數個底孔，複數個底孔沿著以區帶阻隔板為中心圍繞的圓形平均設置。區帶分配板和區帶阻隔板可以成形為盤狀且為同軸。
所揭示的具體實施例包括電漿處理方法。方法包含藉由在陽極與陰極之間施加RF功率以形成含氫氟電漿。包含含氫前驅物與含氟前驅物之每一者的電漿區域，被設置在陽極與陰極之間。陽極與陰極為平面且彼此平行。方法進一步包含藉由從電漿區域移除含氫前驅物，而形成含氟電漿。
陽極可為面板（或噴淋頭），陰極可為另一元件（噴淋頭或面板）。基板處理區域可以設置在噴淋頭的與電漿區域相對的一側。在另一具體實施例中，陽極可為噴淋頭或基板底座，且陰極可為基板底座或噴淋頭（兩種元件中的另一者）。基板處理區域可被設置在陽極與陰極之間。基板處理區域可同時與陽極與陰極接界。陽極、陰極與電漿區域可為圓形。含氫前驅物可包含氫（H2 ）和氨（NH3 ）中的至少一種。含氟前驅物可包含三氟化氮（NF3 ）。
本技術包含改良式氣體分配設計，以在半導體處理作業期間形成均勻電漿，或用於處理半導體處理腔室的內部。雖然習知氣體分配組件可接收要被分配入電漿區域中的特定反應劑或反應劑比例，本文所述技術允許對反應劑輸入分配進行改良式控制。技術允許使反應劑個別流入電漿的不同區域，以抵銷所觀察到的製程均勻度中的任何異常。可將第一前驅物傳遞至在基板/底座中心上方的電漿中心，同時可將第二前驅物傳遞至在基板/底座外部部分上方的電漿外部部分。藉此，可執行改良式作業，因為位於底座上的基板可體驗到跨整體表面的更均勻的蝕刻或沈積輪廓。將於下文更詳細說明該等與其他的益處。
本文所說明的裝置的益處，包含對接近本端或遠端電漿中心的氣體，調整相較於遠離中心或接近電漿邊緣的氣體的濃度的能力。基板處理電漿是非常稀薄的並難以維持，特別是在流入電漿的優勢氣體含有高電負性原子時（諸如氟）。通常添加氬氣以幫助初始撞擊電漿，但由於空間限制，稀薄的電漿區域可仍不支持健康、穩定的同心電漿。氬氣太重以至於濺射(sputtering)可不合需要地損壞或減少基板處理腔室的內部部件的壽命。氦氣用於使電漿均勻，但不會改善初始撞擊能力和隨後的電漿穩定性。帶正電荷的氟離子非常難以產生，因此即使在電漿期間電子濃度也保持低–一些區域可維持電子擊穿級聯到損害電漿區域的其他部分中的電漿健康。本文說明的硬體，可提供使電漿更均勻的益處，及/或可提供使得整個電漿區域（跨越垂直於薄維度的維度）的處理（例如，移除速率）更均勻的益處。在一些情形中，本文說明的硬體甚至可用於（與本文所說明的處理一起）避免偏心的「瓦解」電漿（已在使用氟電漿時觀察到）。因此，本文說明的硬體與方法可用於形成同心電漿，這有益於電漿控制效果並亦使得處理更為均勻。
儘管其餘的揭示內容將常規地利用所揭示的技術識別特定的蝕刻處理，但將容易理解到，系統和方法同樣適用於在所述腔室中可能發生的沉積和清洗處理。因此，技術應不被視為僅限於使用在蝕刻處理。本揭示內容將討論一種可能的系統和腔室，其可與本技術一起使用，以根據所說明的本技術的具體實施例在對此系統進行額外的變化和調整之前，執行某些移除作業。
第1圖圖示根據具體實施例的具有沈積、蝕刻、烘烤與固化腔室的處理系統100的一個具體實施例的俯視平面圖。在圖式中，一對前開式晶圓傳送盒(FOUPs)102供應各種尺寸的基板，基板由機械臂104接收，並在放入位於串聯部分109a-c中的基板處理腔室108a-f之一者之前放入低壓固持區域106中。可使用第二機械臂110以將基板晶圓在固持區域106與基板處理腔室108a-f之間來回運輸。每一基板處理腔室108a-f可被配置以執行各種基板處理作業，包含本文所說明的乾式蝕刻處理，以及循環層沉積（CLD）、原子層沉積（ALD）、化學氣相沉積（CVD）、物理氣相沉積（PVD）、蝕刻、預清洗、脫氣、導向以及其他的基板處理。
基板處理腔室108a-f可包含一或更多個系統部件，以對基板晶圓上的介電薄膜進行沈積、退火、固化及/或蝕刻。在一個配置中，可使用兩對處理腔室（例如108c-d與108e-f）在基板上沈積介電材料，並可使用第三對處理腔室（例如108a-b）以蝕刻所沈積的介電質。在另一配置中，可使用全部三對腔室（例如108a-f）以在基板上蝕刻介電薄膜。所說明的處理的任一者或更多者，可被實行於與圖示於各種具體實施例中的製造系統分離的一或多個腔室中。將理解到系統100思及到對於介電薄膜的沈積、蝕刻、退火與固化腔室的額外配置。
第2A圖圖示示例性處理腔室201的截面圖，處理腔室201內具有分區電漿產生區域。在薄膜蝕刻期間內（例如氮化鈦、氮化鉭、鎢、矽、多晶矽、氧化矽、氮化矽、氮氧化矽、碳氧化矽等等），處理氣體可透過氣體入口組件205流入第一電漿區域215。可選地，系統可包含遠端電漿系統(RPS)202，RPS 202可處理第一氣體，第一氣體隨後行進通過氣體入口組件205。入口組件205可包含兩或更多個分異的氣體供應通道，其中第二通道（未圖示）可繞過RPS 202（若有包含）。
圖示冷卻板203、面板217、離子抑制件223、噴淋頭225與基板支座265（其上設置有基板255），該等每一者可根據具體實施例而被包含。底座265可具有熱交換通道，熱交換流體流動通過熱交換通道以控制基板溫度，在處理作業期間內可操作基板溫度以加熱及/或冷卻基板或晶圓。底座265的晶圓支撐板（可包含鋁、陶瓷或以上之結合）亦可使用嵌入式電阻式加熱器元件而受到電阻式加熱，以達到相當高的溫度，諸如從上至（或約）100°C直至1100°C以上（或約1100°C）。
面板217可以是金字塔形、圓錐形或其他類似結構，且頂部較窄而擴展到較寬的底部。此外如圖所示，面板217可以是平的，並且包括用於分配處理氣體的複數個通道。電漿產生氣體及/或電漿激發物質（取決於RPS 202的用途），可穿過在面板217中的複數個孔，如第2B圖所示，以更均勻地輸送到第一電漿區域215中。
示例性配置可包括使氣體入口組件205通向由面板217從第一電漿區域215分隔的氣體供應區域258，使得氣體/物質流過面板217中的孔進入第一電漿區域215。可選擇結構和操作特徵，以防止電漿從第一電漿區域215大量回流到供應區域258、氣體入口組件205和流體供應系統210中。面板217或腔室的導電頂部以及噴淋頭225，被圖示為具有位於特徵之間的絕緣環220，絕緣環220允許AC電位被相對於噴淋頭225及/或離子抑制器223施加到面板217。絕緣環220可以位於面板217和噴淋頭225及/或離子抑制器223之間，使得能夠在第一電漿區域中形成電容耦合電漿（CCP）。擋板（未示出）可另外位於第一電漿區域215中，或以其他方式與氣體入口組件205耦合，以影響通過氣體入口組件205進入區域的流體流動。
離子抑制器223可包括界定貫穿整個結構的複數個孔的板或其他幾何形狀，複數個孔配置成抑制離子帶電物質從第一電漿區域215遷移出來，同時允許不帶電的中性或自由基物質通過離子抑制器223進入抑制器和噴淋頭之間的活化氣體輸送區域。在具體實施例中，離子抑制器223可包括具有各種孔配置的多孔板。該等不帶電荷的物質可包括高反應性物質，高反應性物質與較少反應性的載氣(carrier gas)通過孔輸送。如上所述，離子物質通過孔的遷移可被減少，並且在一些情況下可被完全抑制。控制通過離子抑制器223的離子物質的量，可有利地提升對於接觸下方晶圓基板的氣體混合物的控制，這可相應提升對氣體混合物的沉積及/或蝕刻特性的控制。例如，調整氣體混合物的離子濃度可顯著改變氣體混合物的蝕刻選擇性，例如SiNx：SiOx蝕刻比、Si：SiOx蝕刻比等等。在進行沉積的替代性具體實施例中，這也可以改變對於介電材料的保形 - 可流動式沉積的平衡。
離子抑制器223中的複數個孔可以配置成控制活化氣體（即離子、自由基及/或中性物質）通過離子抑制器223。例如，可控制孔的縱橫比（孔徑與長度比），及/或孔的幾何形狀，以使得通過離子抑制器223的活化氣體中的離子帶電物質的流動被減少。離子抑制器223中的孔可包括面對電漿激發區域215的錐形部分，以及面對噴淋頭225的圓柱形部分。圓柱形部分的形狀和尺寸可被設置，以控制通向噴淋頭225的離子物質的流動。亦可對離子抑制器223施加可調節的電偏壓，作為控制離子物質流過抑制器的額外手段。
離子抑制器223可用於減少或消除從電漿產生區域行進到基板的離子帶電物質的量。不帶電的中性和自由基物質仍然可以通過離子抑制器中的開口以與基板反應。應當注意，在具體實施例中可不執行在基板周圍的反應區域中完全消除離子帶電物質。在某些情況下，離子物質旨在到達基板以執行蝕刻及/或沉積處理。在該等情況下，離子抑制器可幫助將反應區域中離子物質的濃度控制在有助於此處理的水平。
噴淋頭225與離子抑制器223的組合，可允許存在於第一電漿區域215中的電漿避免直接激發基板處理區域233中的氣體，同時仍然允許激發物質從腔室電漿區域215行進到基板處理區域233中。以這種方式，腔室可以配置成防止電漿接觸被蝕刻的基板255。這可以有利地保護在基板上圖案化的各種複雜結構和膜，若直接與產生的電漿接觸，則該等複雜結構和膜可能損壞、錯位或以其他方式翹曲。
在具體實施例中，離子抑制器（可以是噴淋頭）可用於提供用於氣相蝕刻的自由基及/或中性物質。離子抑制器也可以稱為離子抑制元件。例如，在具體實施例中，離子抑制器用於在從遠端電漿區域到基板處理區域的途中過濾蝕刻電漿流出物。離子抑制器可用於提供具有比離子更高的自由基濃度的反應性氣體。電漿流出物通過設置在遠端電漿區域和基板處理區域之間的離子抑制器。離子抑制器用於顯著減少或基本上消除從電漿產生區域行進到基板的離子物質。本文描述的離子抑制器，僅是在本文所述的氣相蝕刻處理期間在基板處理區域中實現低電子溫度的一種方式。
在具體實施例中，電子束在平行於基板的平面中穿過基板處理區域，以減少電漿流出物的電子溫度。若以這種方式施加電子束，則可以使用更簡單的噴淋頭。在具體實施例中，電子束可以作為設置在基板上方的層狀薄片通過。在具體實施例中，電子束提供中和負電荷源，並提供更有效的手段，以用於減少帶正電荷的離子流向基板並提高蝕刻選擇性。可調節電漿流出物的流動和控制電子束操作的各種參數，以降低在基板處理區域中量測的電子溫度。
在遠端電漿中激發電漿期間，可以使用Langmuir探針在基板處理區域中量測電子溫度。電子溫度可小於0.5eV、小於0.45eV、小於0.4eV、或小於0.35eV。通過電子束、噴淋頭及/或離子抑制器的存在，可以實現該等極低的電子溫度值。不帶電的中性和自由基物質可以通過電子束及/或離子抑制器中的開口，以在基板處反應。與包括濺射和轟擊的傳統電漿蝕刻處理相比，使用自由基和其他中性物質的這種處理可減少電漿損傷。本發明的實施例也優於傳統的濕式蝕刻處理，其中液體的表面張力可導致小特徵的彎曲和剝離。
在此描述的蝕刻處理期間，基板處理區域在本文中可描述為「無電漿」。「無電漿」並不一定意味著此區域沒有電漿。在電漿區域內產生的離子化物質和自由電子可以以非常小的濃度穿過隔板（噴淋頭）中的孔（縫隙）。腔室電漿區域中的電漿的邊界，可通過噴淋頭中的孔在基板處理區域上侵入一些小的程度。此外，可以在基板處理區域中產生低強度電漿，而不會消除本文所述的蝕刻處理的期望特徵。在產生激發的電漿流出物期間具有比腔室電漿區域低得多的強度離子密度的電漿的所有原因，不偏離本文所用的「無電漿」的範圍。
處理系統還可包括電源供應器240，電源供應器240與處理腔室電耦合，以向面板217、離子抑制器223、噴淋頭225及/或底座265提供電力，以在第一電漿區域215或處理區域233中產生電漿。電源供應器可以被配置為根據所執行的處理向腔室輸送可調節的功率量。這樣的配置可以允許將可調諧電漿用於正在執行的處理中。與遠端電漿單元不同（通常具有開啟或關閉功能），可調諧電漿可被配置為向電漿區域215輸送特定量的功率。這相應地可以允許開發特定的電漿特性，使得前驅物可以以特定方式解離，以增強由該等前驅物產生的蝕刻輪廓。
電漿可以在噴淋頭225上方的腔室電漿區域215中或者在噴淋頭225下方的基板處理區域233中被點燃。在具體實施例中，在基板處理區域233中形成的電漿可以是DC偏壓電漿，DC偏壓電漿由作為電極的基座形成。電漿可以存在於腔室電漿區域215中，以從例如含氟前驅物或其他前驅物的流入物中產生自由基前驅物。通常在射頻（RF）範圍內的AC電壓可以施加在處理腔室的導電頂部（諸如面板217）和噴淋頭225及/或離子抑制器223之間，以在沉積期間點燃腔室電漿區域215中的電漿。RF電源供應器可產生13.56 MHz的高RF頻率，但是也可以單獨產生其他頻率或者與13.56MHz頻率組合產生其他頻率。
第2B圖圖示影響通過面板217的處理氣體分佈的特徵的詳細視圖253。如第2A圖與第2B圖圖示，面板217、冷卻板203和氣體入口組件205相交以限定氣體供應區域258，處理氣體可以從氣體入口205輸送到氣體供應區域258中。氣體可以填充氣體供應區域258並且通過面板217中的孔259流到第一電漿區域215。孔259可以被配置為以基本上單向的方式引導流動，使得處理氣體可以流入處理區域233，但是可以在穿過面板217之後部分地或完全地防止回流到氣體供應區域258中。
用於處理腔室部分201的諸如噴淋頭225的氣體分配組件，可以被稱為雙通道噴淋頭（DCSH），並且在第3圖中描述的具體實施例中另外詳述。雙通道噴淋頭可提供允許在處理區域233外分離蝕刻劑的蝕刻處理，以在被輸送到處理區域之前限制腔室部件和彼此之間的相互作用。
噴淋頭225可包括上板214和下板216。板可彼此連接以在板之間限定容積218。板的連接可以是通過上板和下板提供第一流體通道219，並且通過下板216提供第二流體通道221。形成的通道可以被配置為僅通過第二流體通道221提供從容積218通過下板216的流體通路，並且第一流體通道219可以與板和第二流體通道221之間的容積218流體隔離。容積218可通過氣體分配組件225的側面流體性存取。
第3圖為根據具體實施例的與處理腔室一起使用的噴淋頭325的仰視圖。噴淋頭325可對應於第2A圖中所示的噴淋頭225。顯示第一流體通道219的視圖的通孔365可具有複數種形狀和構造，以便控制和影響前驅物通過噴淋頭225的流動。顯示第二流體通道221的視圖的小孔375，可以基本上均勻地分佈在噴淋頭的表面上，在通孔365之中為平均，並且可以有助於在前驅物離開噴淋頭時提供比其他配置更均勻的前驅物混合。
第4圖圖示根據本技術的具體實施例的示例性基板處理系統的部分截面示意圖。基板處理腔室1001包括區帶分配歧管1010，區帶分配歧管1010具有第一歧管通道1015和第二歧管通道1016。第一氣體可以流過第一歧管通道1015，第二氣體可以流過第二歧管通道1016。在具體實施例中，第一歧管通道1015和第二歧管通道1016分開，而防止第一氣體和第二氣體在區帶分配歧管1010內混合在一起。第一氣體可以從限制性更強的第一歧管通道1015擴展到限制較少的內部區域擴展區域1017中。
基板處理腔室1001還可以包括區帶分配板1029，區帶分配板1029可以固定到區帶分配歧管1010。區帶分配板1029還具有兩個單獨的流動通道，用於防止區帶分配板1029內的第一氣體和第二氣體之間的任何混合。區帶分配板1029具有內部區域通道1018，內部區域通道1018配置成從內部區域擴展區域1017接收第一氣體。區帶分配板1029還包括外區通道1019，外區通道1019經配置以從第二歧管通道1016接收第二氣體。可以包括密封件（例如，O形環），以在區帶分配板1029和區帶分配歧管在組裝期間彼此固定（如圖所示）時保持第一氣體和第二氣體之間的分離。
根據具體實施例，基板處理腔室1001還可以包括區帶阻隔板1033，區帶阻隔板1033可以固定到區帶分配板1029。區帶阻隔板1033具有頂部內凹槽1035和頂部外凹槽1034，頂部內凹槽1035經配置成從內區通道1018接收第一氣體，頂部外凹槽1034經配置以從外區通道1019接收第二氣體。區帶阻隔板1033還包括底部內凹槽1037，底部內凹槽1037通過內噴淋頭部分1032流體地耦接到頂部內凹槽1035。區帶阻隔板1033還可包括底部外凹槽1036，底部外凹槽1036通過外噴淋頭部分1031流體耦接到頂部外凹槽1034。基板處理腔室1001還可包括固定到區帶阻隔板1033的面板1039，面板1039具有通孔，通孔被配置成使第一氣體和第二氣體進入電漿區域。頂部內凹槽1035藉由分隔壁1051-1與頂部外凹槽1034橫向密封，分隔壁1051-1密封區帶分配板1029（例如，使用O形環）。底部內凹槽1037藉由分隔壁1051-2與底部外凹槽1036橫向密封，分隔壁1051-2密封面板1039（例如，使用O形環）。以這種方式，第一氣體和第二氣體在進入電漿區域1041之前不會彼此相遇。根據具體實施例，區帶分配歧管1010、區帶分配板1029和區帶阻隔板1033可以配置成使得第一氣體和第二氣體在進入電漿區域1041之前不會混合。
藉由RF電漿電源供應器1043在面板1039和噴淋頭1049之間施加電漿功率。由第一氣體和第二氣體的組合在電漿區域1041中形成電漿。剛剛描述的硬體的技術態樣，使得能夠跨越電漿區域1041的橫向維度調節第一氣體與第二氣體的比率。電絕緣插入件1042可以設置在面板1039和噴淋頭1049之間，以允許RF功率從RF電漿電源供應器1043相對於噴淋頭1049施加到面板1039。在噴淋頭1049下方，並且在基板處理區域壁1071內，可以設置有由基板支撐底座1065支撐的基板1055。
當面板1039處於RF電壓時，噴淋頭1049可以保持在地電位。在另一種配置中，面板1039可以接地，同時噴淋頭1049保持在RF電壓以由RF功率產生電漿。一般而言，陽極保持在地電位，而陰極處於RF電壓。在具體實施例中，陽極是面板1039（或噴淋頭1049），陰極為噴淋頭1049（或面板1039）。基板處理區域可以設置在噴淋頭1049的與電漿區域相對的一側並且與噴淋頭1049接界。剛剛描述的配置是遠端電漿，因為電漿不在基板處理區域內。
根據具體實施例，本文描述的方法和硬體還可用於改善本端電漿及/或本端電漿處理的均勻性。RF電漿功率可以從RF電漿電源供應器1043相對於基板支撐底座1065施加到面板1039，或者相對於面板施加到基板支撐底座1065。在具體實施例中，當形成本端電漿時，不存在噴淋頭1049。在本端電漿配置中，陽極是面板1039（或基板支撐底座1065），陰極為基板支撐底座1065（或面板1039）。基板處理區域設置在陽極和陰極之間，並且基板處理區域鄰接陽極和陰極。
根據具體實施例，區帶分配板和區帶阻隔板可以是圓形的，並且可以成形為盤狀。在具體實施例中，區帶分配板和區帶阻隔板可以是同軸的。
第5A圖圖示根據本技術的具體實施例的示例性阻隔板的部分截面示意圖。第5B圖圖示根據本技術的具體實施例的示例性區帶阻隔板的俯視圖。第5C圖圖示根據本技術的具體實施例的示例性區帶阻隔板的仰視圖。描繪了在固定到區帶分配板或面板之前的區帶阻隔板1133。區帶阻隔板1133具有頂部外凹槽1134和頂部內凹槽1135，頂部外凹槽1134和頂部內凹槽1135由分隔壁1151-1分開。區帶阻隔板1133還具有由分隔壁1151-2分開的底部外凹槽1136和底部內凹槽1137。外噴淋頭1160設置在頂部外凹槽1134和底部外凹槽1136之間，並且經配置以使第二氣體穿過外通孔1140。內噴淋頭1161設置在頂部內凹部1135和底部內凹部1137之間，並且經配置以使第一氣體穿過內通孔1141。
根據具體實施例，內噴淋頭1161可以是圓形的，並且可以由區帶阻隔板1133的中心為中心。在具體實施例中，如圖所示，外噴淋頭1160可以是環形的，並且可以由內噴淋頭1161的中心及/或區帶阻隔板1133的中心為中心。根據具體實施例，可選擇外噴淋頭1160的面積相對於內噴淋頭1161的面積的比率為有益於電漿或處理均勻性，並且可將通孔的尺寸和密度在外部與內部噴淋頭兩者上保持為恆定。在具體實施例中，對於外噴淋頭和內噴淋頭，通孔的密度可以彼此不同。根據具體實施例，內噴淋頭中的通孔的尺寸可以與外噴淋頭中的通孔不同。
在具體實施例中，第一氣體可流過內噴淋頭，第二氣體可流過外噴淋頭，並且內噴淋頭可以在外噴淋頭面積的25％至75％之間、在30％至70％之間、在35％至65％之間、或在40％至60％之間。內噴淋頭和外噴淋頭的通孔密度可以相同。根據具體實施例，內噴淋頭的通孔的尺寸也可以與外噴淋頭的通孔的尺寸相同。分隔壁和外凸緣的面積不包括在面積計算中。在具體實施例中，頂部O形環1150-1可以可選地用於改善頂部外凹槽1134和頂部內凹槽1135之間的密封。類似地，在具體實施例中，在組裝時，底部O形環1150-2可以可選地用於改善底部外凹槽1136和底部內凹槽1137之間的密封。可以選擇內部噴淋頭和外部噴淋頭的尺寸以便於使用標準的O形環尺寸。外噴淋頭的外徑可以是大約12英寸或更大，用於處理12英寸的圓形基板或晶圓。根據具體實施例，內噴淋頭的直徑可為4英寸至10英寸之間、5英寸至9英寸之間、或6英寸至8英寸。在具體實施例中，外噴淋頭的內徑可大於4英寸、大於5英寸、大於6英寸、或大於7英寸。根據具體實施例，外噴淋頭的外徑可小於十四英寸或小於十三英寸。對於靠近外噴淋頭區域的內噴淋頭區域，第一氣體的總流量可大致類似於第二氣體的流動速率（若通孔的密度和幾何形狀相同）。從這種設計開始，可以簡化對於一些處理的第一氣體與第二氣體的流動速率比的優化。其他類型的過程將在本文的後續討論中引入。
根據具體實施例，內噴淋頭可具有直徑在0.1mm和3mm之間、在0.3mm和2mm之間、或在0.5mm和1.5mm之間的通孔。這裡給出的直徑，描述了在直徑隨著通孔變化的情況下的最窄直徑。根據具體實施例，外噴淋頭可具有直徑在0.1mm和3mm之間、在0.3mm和2mm之間、或在0.5mm和1.5mm之間的通孔。在具體實施例中，內噴淋頭可具有30至2,000個通孔、50至1,000個通孔、或100至500個通孔。根據具體實施例，外噴淋頭可具有30至2,000個通孔、50至1,000個通孔、或100至500個通孔。可以使用通孔總數的範圍結合相應噴淋頭的尺寸範圍，來計算內噴淋頭或外噴淋頭中的通孔密度範圍。在具體實施例中，內噴淋頭的開口面積可在總和面積的0.1％至50％之間、0.2％至30％之間、0.5％至15％之間、或1％至10％之間。在具體實施例中，外噴淋頭的開口面積可在總和面積的0.1％至50％之間、0.2％至30％之間、0.5％至15％之間、或1％至10％之間。
已經發現一些處理受益於被相對較厚的環形外噴淋頭包圍的相對較小的內噴淋頭。本文將呈現示例性處理。第一氣體（中心氣體）可以幫助形成穩定的電漿，此電漿的主要成分是第二氣體。在具體實施例中，第一氣體可流過內噴淋頭，第二氣體可流過外噴淋頭，並且內噴淋頭可以低於外噴淋頭面積的25％、低於外噴淋頭面積的20％、低於外噴淋頭面積的15％、低於外噴淋頭面積的10％、低於外噴淋頭面積的5％、或低於外噴淋頭面積的4％。根據具體實施例，內噴淋頭的直徑可小於外噴淋頭直徑的10％、小於外噴淋頭直徑的9％、小於外噴淋頭直徑的8％、小於外噴淋頭直徑的7％、小於外噴淋頭直徑的6％、或小於外噴淋頭直徑的5％。根據具體實施例，第一氣體可以簡單地流過區帶阻隔板的中心處的單個通孔。外噴淋頭中的通孔的尺寸可為如前所述。在具體實施例中，若存在，內噴淋頭可擁有具有前述尺寸的通孔。或者，根據具體實施例，中心處的單個通孔的直徑可在0.1mm和3mm之間、在0.3mm和2mm之間、在0.5mm和1.5mm之間、或小於3mm。在具體實施例中，中心處的單個通孔可以在正上方對準面板中的中心孔，面板設置在區帶阻隔板下方。
根據具體實施例，外頂部凹部的厚度可以在1mm和5mm之間或者在2mm和4mm之間。外頂部凹槽的厚度可以與內頂部凹槽的厚度大致相同。在具體實施例中，內頂部凹槽可具有1mm至5mm之間或2mm至4mm之間的厚度。根據具體實施例，外底部凹部的厚度可以在1mm和5mm之間或者在2mm和4mm之間。外底部凹槽的厚度可以與內底部凹槽的厚度大致相同。在具體實施例中，內底部凹槽可具有1mm至5mm之間或2mm至4mm之間的厚度。根據具體實施例，外噴淋頭的厚度可以在1mm和5mm之間或者在2mm和4mm之間。外噴淋頭的厚度可以與內噴淋頭的厚度大致相同。在具體實施例中，內噴淋頭可具有1mm至5mm之間或2mm至4mm之間的厚度。
第6A圖圖示根據本技術的具體實施例的示例性區帶分配板的俯視圖。第6B圖圖示根據本技術的具體實施例的示例性區帶分配板的仰視圖。區帶分配板1233具有中心通孔1241，中心通孔1241配置成使第一氣體進入區帶阻隔板的頂部內凹槽。區帶分配板1233具有形成在頂表面中的頂部溝槽1261，頂部溝槽1261配置成形成用於使第二氣體進入區帶阻隔板的頂部外凹槽的通道。在組裝時，區帶分配歧管的底表面與頂部溝槽1261的組合，可以藉由向上壓靠區帶分配板1233的頂部而形成第二氣體通道。在組裝時，頂部溝槽1261配置成將第二氣體從起始點傳導到複數個底部孔1255，底部孔1255穿過區帶分配板1233的底部並進入區帶阻隔板的頂部外凹部。頂部溝槽1261可以被配置為在起始點（由區帶分配歧管的第二歧管通道的末端決定）從第二歧管通道接收第二氣體。根據具體實施例，對於複數個底孔中之每一者，從起始點沿著溝槽到複數個底孔中之每一者的路徑長度可以是相同的。根據具體實施例，複數個底孔可包括至少兩個底孔、至少四個底孔、至少六個底孔、至少八個底孔、或至少十個底孔。複數個底孔可包括偶數個底孔。複數個底孔可以圍繞以區帶分配板1233的中心為中心的圓佈置。在具體實施例中，複數個底孔可以沿著圓均勻地（以相等的間距）佈置。
根據具體實施例，中心通孔的直徑可以在0.1mm和30mm之間、在0.5mm和20mm之間、或者在1mm和5mm之間。在具體實施例中，複數個底孔中之每一者可具有相同的尺寸，並且直徑可在0.1mm和10mm之間、在0.3mm和5mm之間、或者小於3mm。根據具體實施例，頂部溝槽1261的寬度可在1mm至10mm之間、2mm至8mm之間、或3mm至7mm之間。各種結構的頂部溝槽126可以實現相同的路徑長度目標，然而第6A圖描繪了一個選項。頂部溝槽1261可以在距中心通孔1241的第一半徑處的起始點1260處開始。頂部溝槽1261可以具有在第一半徑下的圓周部分，接著是從中心通孔1241向外延伸到第二半徑的徑向部分。頂部溝槽1261可以具有一百八十度的圓周部分，此圓周部分將在第二半徑下的徑向部分二等分。兩個徑向部分從一百八十度圓周部分的末端延伸到第三半徑。頂部溝槽1261的兩個徑向部分中之每一者，可以將兩個90度圓周部分中之每一者平分。兩個90度圓周部分的每個末端連接到四個附加的徑向部分，該等徑向部分從第三半徑開始並延伸到第四半徑。最後，四個四十五度的圓周部分被在第四半徑下的四個附加徑向部分一分為二。四個四十五度圓周部分中之每一者，可以終止於區帶分配板1233的八個底孔中的一個。每個所述的圓周部分可以圍繞區帶分配板1233的中心。根據具體實施例，第四半徑可以大於第三半徑、第三半徑可以大於第二半徑、且第二半徑可以大於第一半徑。所述結構表示將第一氣體輸送到頂部內凹槽並將第二氣體輸送到頂部外凹槽的一種方式。可在區帶分配板1233的底部上包含O形環1251，以將頂部內凹槽與頂部外凹槽在區帶阻隔板上密封。
第7圖圖示根據本技術的具體實施例的區帶分配岐管1311的部分截面示意圖。區帶分配歧管具有第一歧管通道1321和第二歧管通道1331。第一歧管通道1321與膨脹區域1322流體耦接，以在第一氣體通過區帶分配板的中心通孔進入頂部內凹槽之前改善第一氣體的內部混合。可以包括內區通道O形環1341，以進一步分離第一氣體與第二氣體以避免過早混合。第二歧管通道1331被流體耦接，以使第二氣體通過區帶分配板的頂部溝槽，然後通過多個底孔進入區帶阻隔板的頂部外凹槽。在具體實施例中，可以包括外區通道O形環1342以保持第一氣體和第二氣體之間的分離。根據具體實施例，第一歧管通道可具有圓形橫截面並且直徑大於2mm、大於5mm或大於10mm。在具體實施例中，第二歧管通道可具有圓形橫截面並且直徑大於2mm、大於5mm或大於10mm。根據具體實施例，擴展區域可具有圓形橫截面並且直徑大於5mm、大於10mm或大於15mm。
第8A圖與第8B圖圖示根據本技術的具體實施例的示例性基板處理系統的部分截面示意圖。說明所圖示的硬體以顯示處理問題，該等問題可透過本文提出的技術態樣來克服。在基板處理系統中形成含氟電漿，含氟電漿顯示出由本文所述方法和系統解決的不穩定性。基板處理腔室1401包括區帶分配歧管1410，區帶分配歧管1410具有第一歧管通道1415和第二歧管通道1416。含氫前驅物偶爾流過第一歧管通道1415，含氟前驅物流過第二歧管通道1416。含氫前驅物從第一歧管通道1415擴展到擴展區域1417中。基板處理腔室1401還可以包括區帶分配板1429，區帶分配板1429固定到區帶分配歧管1410。含氫前驅物從擴展區域1417流入內區通道1418。含氟前驅物從第二歧管通道1416流入外區通道1419。兩個通道是分開的，並且在所繪製的硬體中不發生混合，直到含氫前驅物和含氟前驅物離開區帶分配板1429。
根據具體實施例，基板處理腔室1401還可以包括區帶阻隔板1433，區帶阻隔板1433固定到區帶分配板1429。區帶阻隔板1433具有頂部凹槽1435，頂部凹槽1435配置成從內區通道1418接收含氫前驅物。與第4圖的硬體相反，頂部凹槽1435還配置成從外區通道1419接收含氟前驅物。在這種情況下，沒有分隔壁，因此兩種前驅物可以混合。區帶阻隔板1433包括底部內凹槽1437，底部內凹槽1437通過內噴淋頭部分流體耦接到頂部凹槽1435。區帶阻隔板1433還可包括底部外凹槽1436，底部外凹槽1436通過外噴淋頭部分流體耦接到頂部凹槽1435。基板處理腔室1401還可包括固定到區帶阻隔板1433的面板1439，面板1439具有通孔，通孔被配置成使含氫前驅物及/或含氟前驅物進入電漿區域以形成電漿1441-1。藉由RF電漿電源供應器1443在面板1439和噴淋頭1449之間施加電漿功率。電絕緣插入件1442可以設置在面板1439和噴淋頭1449之間，以允許RF功率從RF電漿電源供應器1443相對於噴淋頭1449施加到面板1439。在噴淋頭1449下方，並且在基板處理區域壁1471內，可以設置有由基板支撐底座1465支撐的基板1455。
最初在沒有含氫前驅物之下，從含氟前驅物在電漿區域中形成電漿1441-1。儘管氟電漿1441-1可以開始在電漿區域內集中，但是已經觀察到不穩定性，這可能導致初始氟電漿1441-1塌陷成偏心氟電漿1441-2。偏心氟電漿1441-2可以位於電漿區域的邊緣上，並且佔據圓形電漿區域的不到一半或小於四分之一。偏心電漿可能導致不可接受的製程變異。潔淨電漿與基板處理電漿是非常稀薄的並難以維持，特別是在流入電漿的優勢氣體含有高電負性原子時（諸如氟）。帶正電荷的氟離子非常難以產生，因此即使在電漿期間電子濃度也保持低。該等特性可能導致觀察到的偏心電漿。
本文提出了兩種技術，它們可以單獨使用或組合使用，以提供電漿不穩定性的解決方案。本文說明的硬體甚至可用於（與本文所說明的處理一起）避免偏心的「瓦解」電漿（已在使用氟電漿時觀察到）。因此，本文說明的硬體與方法可用於形成集中且同心的電漿，這有益於電漿控制效果並亦使得處理更為均勻。
第9A圖至第9E圖圖示根據本技術的具體實施例的示例性基板處理系統的部分截面示意圖。所示硬體部分地解決了第8B圖中所示的電漿不穩定性。基板處理腔室1501-1包括區帶分配歧管1510，區帶分配歧管1510具有第一歧管通道1515和第二歧管通道1516。含氫前驅物流過第一歧管通道1515，含氟前驅物流過第二歧管通道1516。含氫前驅物從第一歧管通道1515擴展到擴展區域1517中。基板處理腔室1501-1還可以包括區帶分配板1529，區帶分配板1529固定到區帶分配歧管1510。含氫前驅物從擴展區域1517流入內區通道1518。含氟前驅物從第二歧管通道1516流入外區通道1519。兩個通道是分開的，並且在所繪製的硬體中不發生混合，直到含氫前驅物和含氟前驅物進入下游的電漿區域。在具體實施例中，外區通道1519可以包括形成在區帶分配板1529的頂部中的溝槽，或者可以包括形成在區帶分配板1529內部的通道，如圖所示。
根據具體實施例，基板處理腔室1501-1還可以包括區帶阻隔板1533-1，區帶阻隔板1533-1固定到區帶分配板1529。區帶阻隔板1533-1具有頂部內凹槽1535，頂部內凹槽1535配置成從內區通道1518接收含氫前驅物。區帶阻隔板1533-1具有頂部內凹槽1535，頂部內凹槽1535配置成從外區通道1519接收含氟前驅物。分隔壁防止含氫前驅物與含氟前驅物混合。區帶阻隔板1533-1包括底部內凹槽1537，底部內凹槽1537通過內噴淋頭部分流體耦接到頂部內凹槽1535。區帶阻隔板1533-1還可包括底部外凹槽1536，底部外凹槽1536通過外噴淋頭部分流體耦接到頂部外凹槽1534。基板處理腔室1501-1還可包括固定到區帶阻隔板1533-1的面板1539，面板1539具有通孔，通孔被配置成使含氫前驅物及/或含氟前驅物進入電漿區域以形成電漿1541-1。藉由RF電漿電源供應器1543在面板1539和噴淋頭1549之間施加電漿功率。電絕緣插入件1542可以設置在面板1539和噴淋頭1549之間，以允許RF功率從RF電漿電源供應器1543相對於噴淋頭1549施加到面板1539。
根據具體實施例，最初在沒有含氟前驅物之下，從含氫前驅物在電漿區域中形成電漿1541-1。一旦氫電漿開始，含氟前驅物就流入電漿區域。電漿中的氫更容易失去電子，並有助於引發含氟前驅物的健康電漿1541-2。一旦健康的電漿1541-2開始，則可以關閉或關斷流入電漿區域的含氫前驅物。已經觀察到，以這種方式形成的氟電漿更密集並且理想地位於電漿區域的中心。藉由開始單獨使含氟前驅物流到氟電漿1541-2的中心（例如，使用第一歧管通道1515而不是第二歧管通道1516），進一步測試氟電漿1541-2的穩定性。氟電漿1541-2向側面移動以形成偏斜的氟電漿1541-3。然而，根據具體實施例，一旦含氟前驅物被關閉或關斷，則氟電漿1541-4返回到中心（並且具有相同的高強度）。
電漿中的氫原子可以更容易地或自由地向電漿提供電子，並且所提供的電子引發電漿中氟原子的更全面的電離。藉由使用（例如）第一歧管通道使含氫前驅物流到電漿區域的中心，可以有利地影響氫原子的引入。引入「新鮮的」含氟前驅物（難以電離）試圖撲滅電漿，因為在此階段同時沒有氫源。作為回應，電漿向側面推動，但是儘管沒有氫氣並且存在新的含氟前驅物流，但是顯著的初始電離仍然存在。介紹額外的含氟前驅物流的引入，是為了建立氟電漿的穩定性和健康，而不是提出理想的處理流程。
可使用額外的具體實施例，以產生穩定的氟電漿1541-2以及可能的其他處理。在具體實施例中，區帶阻隔板1533-2可具有形成在內通道插入件1540中的中心通孔。中心通孔可以配置成從內區通道1518接收第一氣體（例如含氫前驅物）。區帶阻擋板1533-2可包括頂部外凹槽1534，頂部外凹槽1534配置成從外區通道1519接收第二氣體（例如含氟前驅物）。區帶阻隔板1533-2還可包括底部外凹槽1536，底部外凹槽1536通過外噴淋頭部分流體耦接到頂部外凹槽1534。區帶阻隔板1533-2還可包括固定到區帶阻隔板1533-2的面板1539，面板1539具有通孔，通孔被配置成使第二氣體進入電漿區域。區帶阻隔板1533-2可以具有中央面板孔，中央面板孔配置成從內部通道插入件1540中的中心通孔接收第一氣體並將第一氣體傳遞到電漿區域中以形成電漿1541-1。藉由執行含氫前驅物序列（如上所述），基板處理腔室1501-2可用於形成穩定的氟電漿1541-2。在這種情況下，含氫前驅物將流過內通道插入件1540（通過中心通孔）。
第10圖與第11圖圖示根據本技術的具體實施例的用於形成電漿的方法。第12圖圖示根據本技術的具體實施例的在處理期間的示例性電漿參數圖表。形成電漿的方法1601，包括在作業1605中使含氫前驅物流入電漿區域。在作業1610中，將RF電漿功率施加到電漿區域以從含氫前驅物形成電漿。根據具體實施例，在電漿區域中不存在氟。在具體實施例中，氟濃度可以小於氫濃度（以原子濃度量測）、小於氫濃度的50％、小於氫濃度的20％、小於氫濃度的10％、或小於氫濃度的5％。根據具體實施例，含氫前驅物可以在啟動RF功率之前流入電漿區域，或者可以在將含氫前驅物流入電漿區域之前首先施加RF功率。在圖12中，曲線1801示出了在流動含氫前驅物1820之前施加的RF功率1810。
方法1601還包括在作業1615中使含氟前驅物流入電漿區域。含氟前驅物的流動在第12圖所示的曲線1801中表示為1830。然後，在作業1619，施加的RF功率激發含氫前驅物和含氟前驅物的混合物，以在電漿區域中形成更強的電漿。在作業1620中，可以停止含氫前驅物進入電漿區域的流動。在作業1625中，RF功率的持續施加產生氟電漿。在具體實施例中，儘管氫不再存在，但氟電漿已經永久地改變，並且對於在製造環境中不可避免地發生的各種不穩定力而言可能更穩定。在作業1630中關閉RF電漿功率，並且停止含氟前驅物的流動。
在第11圖中，在作業1705中，從含氫前驅物和含氟前驅物的混合物在電漿區域中形成RF電漿。在作業1710中，從電漿區域移除含氫前驅物。然後，在作業1720中，僅從含氟前驅物在電漿區域中形成RF電漿。在作業1730中關閉RF電漿功率，並且停止含氟前驅物的流動。根據具體實施例，可以在停止含氟前驅物的流動之前或之後關閉RF電漿功率。
在具體實施例中，含氫前驅物可以流入電漿區域1秒至30秒、2秒至20秒、或3秒至15秒之間。
在本文所述的所有具體實施例中，第一氣體（例如氫氣）的流動可由第一質量流量控制器（MFC）控制，第二氣體（例如氟氣）的流動可由第二質量流量控制器控制。第一質量流量控制器和第二質量流量控制器可以位於基板處理腔室外部並且位於區帶分配歧管的上游。根據具體實施例，示例性含氫前驅物的流動可以在1sccm和200sccm之間、在5sccm和100sccm之間、或在10sccm和50sccm之間。根據具體實施例，示例性含氟前驅物的流動可以在20sccm和5000sccm之間、在50sccm和2000sccm之間、或在100sccm和1000sccm之間。與含氟前驅物相比，含氫前驅物可以以低得多的流速產生強且穩定的氟電漿。在每種前驅物的流動中包括氦氣流作為載氣。然而，氦通常使電漿均勻，將氦流入電漿區域不足以避免本文所述的坍塌的氟電漿。在早期電漿階段包含含氫前驅物，避免了電漿坍塌。
電漿區域中的壓力影響氟電漿坍塌的可能性。在較低壓力下，氟電漿可以保持均勻，而不需要初始存在含氫前驅物。增加氟電漿中的壓力會增加氟電漿坍塌的可能性，並且可能與氟原子的高電負性和平均自由程(mean free path)的減少有關。根據具體實施例，電漿區域中的壓力可以大於2托、大於3托、大於4托、大於5托、大於6托、或大於7托。
施加到電漿區域的電漿功率也影響氟電漿塌陷的可能性。電漿功率的增加也可能導致氟電漿的概率更高。包括如本文所述的早期暴露於氫氣，已導致在高電漿功率下的穩定電漿。在具體實施例中，RF電漿功率可以大於200瓦、大於300瓦、大於400瓦、大於500瓦、或大於750瓦。
根據具體實施例，第一氣體可以是含氫前驅物，第二氣體可以是含氟前驅物。或者，第一氣體可以是具有第一原子濃度比的氫氟組合，第二氣體可以具有第二原子濃度比。第二原子濃度比可以與第一原子濃度比不同。在具體實施例中，這樣的配置使得能夠對通常的處理均勻性進行微妙的調整，並且在這種情況下，第一氣體和第二氣體都可以在整個基板處理持續期間中存在。含氫前驅物可以是氫（H2 ）和氨（NH3 ）中的一種，含氟前驅物可以是三氟化氮（NF3 ）。
在上文說明中，為了解釋的目的，闡述了多種細節，以期通透瞭解本技術的各種具體實施例。然而在本發明技術領域中具有通常知識者將顯然瞭解到，特定具體實施例的實作可並不需要該等特定細節的一些（或是需要額外的細節）。
在已揭示了數種具體實施例之後，在本發明技術領域中具有通常知識者將理解到，可使用各種修改、替代性結構與均等範圍，而不脫離所揭示具體實施例的精神。此外，並未說明一些為人熟知的處理與要素，以避免不必要地遮蔽本技術。因此，上文的說明不應被視為限制技術的範圍。
在提供一系列值的情況下，應當理解，除非上下文另有明確規定，否則還具體揭示了此範圍的上限和下限之間的每個中間值，至下限單位的最小部分。在所述範圍內的任何陳述值或未陳述的介入值與所述範圍內的任何其他陳述或介入值之間的任何較窄範圍都包括在內。該等較小範圍的上限和下限可以獨立地包括在此範圍內或排除在此範圍內，且包含上下限之一者、兩者、或皆不包含的較小範圍中的每一範圍也被包含在本技術內，且受制於所陳述範圍中任何特別排除的限制。在所陳述的範圍包含上下限之一者或兩者時，也包含了排除了該等上下限之任一者或兩者的範圍。
說明書與附加申請專利範圍中所使用的單數形式「一(a)」、「一(an)」以及「該」，包含複數的參照物，除非背景內容清楚表示並非如此。因此，例如，對「一層」的參照，包含複數個此種層，且對於「此前驅物」的參照，包含對於一或更多種前驅物的參照以及在本發明技術領域中具有通常知識者所能知的均等範圍，諸如此類。
此外，本說明書和下列申請專利範圍中使用的詞語「包含(comprise(s))」、「包含(comprising)」、「含有(contain(s))」、「含有(containing)」、「包括(include(s))」和「具有(including)」，意為指明所陳述的特徵、整數、部件、或作業的存在，但他們不排除存在或添加一個或多個其他特徵、整數、部件、作業、步驟、或組。
100‧‧‧處理系統102‧‧‧前開式晶圓傳送盒(FOUPs)104‧‧‧機械臂106‧‧‧低壓固持區域108a-f‧‧‧基板處理腔室109a-c‧‧‧串聯部分110‧‧‧第二機械臂201‧‧‧處理腔室202‧‧‧遠端電漿系統(RPS)203‧‧‧冷卻板205‧‧‧氣體入口組件210‧‧‧流體供應系統214‧‧‧上板215‧‧‧第一電漿區域216‧‧‧下板217‧‧‧面板218‧‧‧容積219‧‧‧第一流體通道220‧‧‧絕緣環221‧‧‧第二流體通道223‧‧‧離子抑制件225‧‧‧噴淋頭233‧‧‧基板處理區域240‧‧‧電源供應器255‧‧‧基板258‧‧‧氣體供應區域259‧‧‧孔265‧‧‧基板支座325‧‧‧噴淋頭365‧‧‧通孔375‧‧‧小孔1001‧‧‧基板處理腔室1010‧‧‧區帶分配歧管1015‧‧‧第一歧管通道1016‧‧‧第二歧管通道1017‧‧‧內部區域擴展區域1018‧‧‧內部區域通道1019‧‧‧外區通道1029‧‧‧區帶分配板1031‧‧‧外噴淋頭部分1032‧‧‧內噴淋頭部分1033‧‧‧區帶阻隔板1034‧‧‧頂部外凹槽1035‧‧‧頂部內凹槽1036‧‧‧底部外凹槽1037‧‧‧底部內凹槽1039‧‧‧面板1041‧‧‧電漿區域1042‧‧‧電絕緣插入件1043‧‧‧RF電漿電源供應器1049‧‧‧噴淋頭1051-1‧‧‧分隔壁1051-2‧‧‧分隔壁1055‧‧‧基板1065‧‧‧基板支撐底座1071‧‧‧基板處理區域壁1133‧‧‧區帶阻隔板1134‧‧‧頂部外凹槽1135‧‧‧頂部內凹槽1136‧‧‧底部外凹槽1137‧‧‧底部內凹槽1140‧‧‧外通孔1141‧‧‧內通孔1150-1‧‧‧頂部O形環1150-2‧‧‧底部O形環1151-1‧‧‧分隔壁1151-2‧‧‧分隔壁1160‧‧‧外噴淋頭1161‧‧‧內噴淋頭1233‧‧‧區帶分配板1241‧‧‧中心通孔1251‧‧‧O形環1255‧‧‧底部孔1260‧‧‧起始點1261‧‧‧頂部溝槽1311‧‧‧區帶分配岐管1321‧‧‧第一歧管通道1322‧‧‧膨脹區域1331‧‧‧第二歧管通道1341‧‧‧內區通道O形環1342‧‧‧外區通道O形環1401‧‧‧基板處理腔室1410‧‧‧區帶分配歧管1415‧‧‧第一歧管通道1416‧‧‧第二歧管通道1417‧‧‧擴展區域1418‧‧‧內區通道1419‧‧‧外區通道1429‧‧‧區帶分配板1433‧‧‧區帶阻隔板1435‧‧‧頂部凹槽1436‧‧‧底部外凹槽1437‧‧‧底部內凹槽1439‧‧‧面板1441-1‧‧‧初始氟電漿1441-2‧‧‧偏心氟電漿1442‧‧‧電絕緣插入件1443‧‧‧RF電漿電源供應器1449‧‧‧噴淋頭1455‧‧‧基板1465‧‧‧基板支撐底座1471‧‧‧基板處理區域壁1501-1‧‧‧基板處理腔室1501-2‧‧‧基板處理腔室1510‧‧‧區帶分配歧管1515‧‧‧第一歧管通道1516‧‧‧第二歧管通道1517‧‧‧擴展區域1518‧‧‧內區通道1519‧‧‧外區通道1529‧‧‧區帶分配板1533-1‧‧‧區帶阻隔板1533-2‧‧‧區帶阻隔板1534‧‧‧頂部外凹槽1535‧‧‧頂部內凹槽1536‧‧‧底部外凹槽1537‧‧‧底部內凹槽1539‧‧‧面板1541-1‧‧‧電漿1541-2‧‧‧健康電漿1541-3‧‧‧偏斜的氟電漿1541-4‧‧‧氟電漿1542‧‧‧電絕緣插入件1543‧‧‧RF電漿電源供應器1549‧‧‧噴淋頭1601‧‧‧方法1605-1630‧‧‧作業1701‧‧‧方法1705-1730‧‧‧作業1801‧‧‧曲線1810‧‧‧RF功率1820‧‧‧含氫前驅物的流動1830‧‧‧含氟前驅物的流動
參照說明書的其餘部分與圖式，可進一步理解所揭示技術的本質與優點。
第1圖圖示根據本技術的具體實施例的示例性處理系統的俯視平面圖。
第2A圖圖示根據本技術的具體實施例的示例性處理腔室的截面示意圖。
第2B圖圖示根據本技術的具體實施例的示例性噴淋頭的詳細視圖。
第3圖圖示根據本技術的具體實施例的示例性噴淋頭的仰視平面圖。
第4圖圖示根據本技術的具體實施例的示例性基板處理系統的部分截面示意圖。
第5A圖圖示根據本技術的具體實施例的示例性阻隔板的部分截面示意圖。
第5B圖圖示根據本技術的具體實施例的示例性區帶阻隔板的俯視圖。
第5C圖圖示根據本技術的具體實施例的示例性區帶阻隔板的仰視圖。
第6A圖圖示根據本技術的具體實施例的示例性區帶分配板的俯視圖。
第6B圖圖示根據本技術的具體實施例的示例性區帶分配板的仰視圖。
第7圖圖示根據本技術的具體實施例的區帶分配岐管的部分截面示意圖。
第8A圖圖示根據本技術的具體實施例的示例性基板處理系統的部分截面示意圖。
第8B圖圖示根據本技術的具體實施例的示例性基板處理系統的部分截面示意圖。
第9A圖圖示根據本技術的具體實施例的示例性基板處理系統的部分截面示意圖。
第9B圖圖示根據本技術的具體實施例的示例性基板處理系統的部分截面示意圖。
第9C圖圖示根據本技術的具體實施例的示例性基板處理系統的部分截面示意圖。
第9D圖圖示根據本技術的具體實施例的示例性基板處理系統的部分截面示意圖。
第9E圖圖示根據本技術的具體實施例的示例性基板處理系統的部分截面示意圖。
第10圖圖示根據本技術的具體實施例的用於形成電漿的方法。
第11圖圖示根據本技術的具體實施例的用於形成電漿的方法。
第12圖圖示根據本技術的具體實施例的在處理期間的示例性電漿參數圖表。
數個圖式被包含以作為示意圖。應瞭解到圖示係用於說明，且不應被視為具有實際尺寸比例，除非特定說明其為實際尺寸比例。此外，作為示意圖，圖式被提供以幫助理解，且可不包含相較於實際呈現的所有態樣或資訊，並可包含誇大的內容以供說明。
在附加圖式中，類似的部件及/或特徵可具有相同的元件符號。再者，相同類型的各個部件，可由元件符號之後的字母來分辨，此字母分辨類似的部件。若說明書中僅使用了首個元件符號，則其說明可適用於具有相同的首個元件符號的類似部件之任意者，不論其字尾字母為何。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
1001‧‧‧基板處理腔室
1010‧‧‧區帶分配歧管
1015‧‧‧第一歧管通道
1016‧‧‧第二歧管通道
1017‧‧‧內部區域擴展區域
1018‧‧‧內部區域通道
1019‧‧‧外區通道
1029‧‧‧區帶分配板
1031‧‧‧外噴淋頭部分
1032‧‧‧內噴淋頭部分
1033‧‧‧區帶阻隔板
1034‧‧‧頂部外凹槽
1035‧‧‧頂部內凹槽
1036‧‧‧底部外凹槽
1037‧‧‧底部內凹槽
1039‧‧‧面板
1041‧‧‧電漿區域
1042‧‧‧電絕緣插入件
1043‧‧‧RF電漿電源供應器
1049‧‧‧噴淋頭
1051-1‧‧‧分隔壁
1051-2‧‧‧分隔壁
1055‧‧‧基板
1065‧‧‧基板支撐底座
1071‧‧‧基板處理區域壁

Claims (11)

  1. 一種基板處理系統，包含：一區帶分配岐管，該區帶分配岐管具有一第一岐管通道與一第二岐管通道；一區帶分配板，該區帶分配板固定至該區帶分配岐管，其中該區帶分配板具有一內區通道與一外區通道，該內區通道經配置以接收來自該第一岐管通道的一第一氣體，該外區通道經配置以接收來自該第二岐管通道的一第二氣體；一區帶阻隔板，該區帶阻隔板固定至該區帶分配板，其中該區帶阻隔板具有一頂部內凹槽與一頂部外凹槽，該頂部內凹槽經配置以接收來自該內區通道的該第一氣體，該頂部外凹槽經配置以接收來自該外區通道的該第二氣體，該頂部內凹槽與該頂部外凹槽由一第一分隔壁橫向隔離；其中該區帶阻隔板進一步包含一底部內凹槽與一底部外凹槽，該底部內凹槽透過一內噴淋頭部分流體耦接至該頂部內凹槽，該底部外凹槽透過一外噴淋頭部分流體耦接至該頂部外凹槽，該底部內凹槽與該底部外凹槽由一第二分隔壁橫向隔離；以及一面板，該面板固定至該區帶阻隔板，該面板具有通孔，該等通孔經配置以使該第一氣體與該第二氣體 輸入一電漿區域。
  2. 如請求項1所述之基板處理系統，其中該外區通道包含形成在該區帶分配板的一頂部中的一溝槽，其中該區帶分配板包含複數個底孔，該複數個底孔沿著以該區帶阻隔板為中心圍繞的一圓形平均設置，且該溝槽經配置以在一起始點接收來自該第二岐管通道的該第二氣體，且其中對於該複數個底孔之每一者，從該起始點沿著該溝槽到該複數個底孔之每一者的一路徑長度是相同的。
  3. 如請求項2所述之基板處理系統，其中該複數個底孔包含至少八個底孔。
  4. 如請求項1所述之基板處理系統，其中該區帶分配岐管、該區帶分配板與該區帶阻隔板經配置而使得該第一氣體與該第二氣體在進入該電漿區域之前不會混合。
  5. 如請求項1所述之基板處理系統，該基板處理系統進一步包含一噴淋頭，該噴淋頭平行於該面板，其中該電漿區域設置在該面板與該噴淋頭之間。
  6. 如請求項5所述之基板處理系統，其中該電漿區域鄰接該面板與該噴淋頭之每一者。
  7. 如請求項5所述之基板處理系統，該基板處理系統進一步包含一基板處理區域，該基板處理區域 在該噴淋頭的與該電漿區域相對的一側上與噴淋頭接界。
  8. 如請求項1所述之基板處理系統，其中該電漿區域為經配置以容納欲處理之一基板的一本端電漿區域。
  9. 如請求項1所述之基板處理系統，其中該區帶分配板與該區帶阻隔板被成形為盤狀且為同軸。
  10. 如請求項1所述之基板處理系統，其中該第一歧管通道包括一窄通道部分與一寬通道部分，該寬通道部分設置為較接近該區帶分配板，其中該第一岐管通道經配置以允許該第一氣體在進入該頂部內凹槽之前擴展並混合，其中該窄通道部分具有一第一直徑，且該寬通道部分具有大於該第一直徑的一第二直徑。
  11. 如請求項1所述之基板處理系統，其中該區帶分配板包含複數個底孔，該複數個底孔沿著以該區帶阻隔板為中心圍繞的一圓形平均設置。
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