TWI836183B - 多區域氣體分配系統及方法 - Google Patents

多區域氣體分配系統及方法 Download PDF

Info

Publication number
TWI836183B
TWI836183B TW110104427A TW110104427A TWI836183B TW I836183 B TWI836183 B TW I836183B TW 110104427 A TW110104427 A TW 110104427A TW 110104427 A TW110104427 A TW 110104427A TW I836183 B TWI836183 B TW I836183B
Authority
TW
Taiwan
Prior art keywords
plasma
plate
channel
groove
distribution
Prior art date
Application number
TW110104427A
Other languages
English (en)
Other versions
TW202131431A (zh
Inventor
沙拉傑特 辛
肯尼士Ｄ 夏茲
永崙 曹
馬林 威傑庫恩
迪米崔 凱爾西斯
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW202131431A publication Critical patent/TW202131431A/zh
Application granted granted Critical
Publication of TWI836183B publication Critical patent/TWI836183B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H01L21/02049—Dry cleaning only with gaseous HF
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3323—Problems associated with coating uniformity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3344—Problems associated with etching isotropy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

本技術包含改良式氣體分配設計，以在半導體處理作業期間形成均勻電漿，或用於處理半導體處理腔室的內部。雖然習知氣體分配組件可接收要被分配入電漿區域中的特定反應劑或反應劑比例，本文所述技術允許對反應劑輸入分配進行改良式控制。技術允許使反應劑個別流入電漿的不同區域，以抵銷所觀察到的製程均勻度中的任何異常。可將第一前驅物傳遞至在基板/底座中心上方的電漿中心，同時可將第二前驅物傳遞至在基板/底座外部部分上方的電漿外部部分。藉此，位於底座上的基板可體驗到跨整體表面的更均勻的蝕刻或沈積輪廓。

Description

多區域氣體分配系統及方法
本技術相關於製造半導體的部件與設備。更特定而言，本技術相關於氣體分配組件與作業方法。
藉由在基板表面上產生具有錯綜複雜圖案的材料層的製程，而使積體電路的製造成為可能。在基板上產生圖案化材料，需要用於形成與移除材料的受控方法。用於激勵反應劑的電漿的均勻度，可直接衝擊最終產品。遠端電漿中的電漿均勻度擾動，可造成基板邊緣附近相對於中心的區域具有高蝕刻速率或沈積速率，反之亦然。已藉由調整基板表面與噴淋頭之間間距來控制蝕刻均勻度，但蝕刻速率也被改變。取決於沿著基板表面的變異程度，可因蝕刻製程所產生的不一致性而發生裝置失效。
此外已發現到，特別是在存在氟與其他電負性物質之下，電漿均勻度會顯現不穩定性。電負性物質可不輕易放棄電子，這使得維持對稱的電漿更為困難。沿著基板表面為對稱的電漿可使得蝕刻製程更為均勻。
因此需要改良的系統與方法，以產生高品質的裝置與結構。本技術解決了該等與其他的需求。
本技術包含改良式氣體分配設計，以在半導體處理作業期間形成均勻電漿，或用於處理半導體處理腔室的內部。雖然習知氣體分配組件可接收要被分配入電漿區域中的特定反應劑或反應劑比例，本文所述技術允許對反應劑輸入分配進行改良式控制。技術允許使反應劑個別流入電漿的不同區域，以抵銷所觀察到的製程均勻度中的任何異常。可將第一前驅物傳遞至在基板/底座中心上方的電漿中心，同時可將第二前驅物傳遞至在基板/底座外部部分上方的電漿外部部分。藉此，可執行改良式作業，因為位於底座上的基板可體驗到跨整體表面的更均勻的蝕刻或沈積輪廓。
在一些具體實施例中，區帶分配岐管具有兩個個別的前驅物通道，前驅物被供應至區帶分配板的兩個個別區域。區帶分配板可提供第一氣體至區帶阻隔板的內部分，並可提供第二氣體至區帶阻隔板的外部分。內部分可具有內噴淋頭，內噴淋頭在區帶阻隔板內定中心。內噴淋頭可為圓形。外部分可具有外噴淋頭，外噴淋頭沿著區帶阻隔板定中心，並可具有圍繞內噴淋頭的環形形狀。在經組裝而使得所有元件彼此固定之後，第一氣體與第二氣體在通過區帶阻隔板之前保持分離。
本文所說明的裝置的益處，包含對輸送至本端或遠端電漿中心的氣體，調整相較於輸送至電漿外部分的氣體的能力。基板處理電漿非常稀薄，但仍需要在基板表面上或在基板處理系統內部周圍（以進行清潔程序）提供均勻的淨效應。蝕刻和清洗時常仰賴高電負性反應物，諸如含氟前驅物。氟會加劇電漿均勻性問題，因為氟具有很高的電負性。氟離子非常難以產生，因此在稀薄寬廣電漿區域中能夠維持電漿的電子很稀少–一些區域可維持電子擊穿級聯到損害電漿區域的其他部分中的電漿健康。本文說明的硬體，可提供使電漿更均勻的益處，及/或可提供使得整個電漿區域（跨越垂直於薄維度的維度）的處理（例如，移除速率）更均勻的益處。在一些情況下，本文描述的硬體甚至可以用於避免偏斜的電漿，偏斜電漿將會塌陷到電漿區域的一側。因此，本文說明的硬體與方法可用於形成同心電漿，這有益於電漿控制效果並亦使得處理更為均勻。
所揭示的具體實施例包括基板處理系統。基板處理系統包含區帶分配岐管，區帶分配岐管具有第一岐管通道與一第二岐管通道。基板處理系統進一步包含區帶分配板，區帶分配板固定至區帶分配岐管。區帶分配板具有內區通道與外區通道，內區通道經配置以接收來自第一岐管通道的第一氣體，外區通道經配置以接收來自第二岐管通道的第二氣體。基板處理系統進一步包含區帶阻隔板，區帶阻隔板固定至區帶分配板。區帶阻隔板具有頂部內凹槽和頂部外凹槽，頂部內凹槽經配置成從內區通道接收第一氣體，頂部外凹槽經配置以從外區通道接收第二氣體。區帶阻隔板進一步包含底部內凹槽與底部外凹槽，底部內凹槽透過內噴淋頭部分流體耦接至頂部內凹槽，底部外凹槽透過外噴淋頭部分流體耦接至頂部外凹槽。基板處理系統還可包括固定到區帶阻隔板的面板，面板具有通孔，通孔被配置成使第一氣體和第二氣體進入電漿區域。
外區通道可以包括形成在區帶分配板的頂部中的溝槽。區帶分配板可包含複數個底孔，複數個底孔沿著以區帶阻隔板為中心圍繞的圓形平均設置。溝槽可以被配置為在起始點從第二歧管通道接收第二氣體。對於複數個底孔中之每一者，從起始點沿著溝槽到複數個底孔中之每一者的路徑長度可以是相同的。複數個底孔可包括至少八個底孔。區帶分配歧管、區帶分配板和區帶阻隔板可以配置成使得第一氣體和第二氣體在進入電漿區域之前不會混合。基板處理系統可進一步包含噴淋頭，噴淋頭平行於面板。電漿區域可設置在面板與噴淋頭之間。電漿區域可同時鄰接面板與噴淋頭之每一者。基板處理系統可進一步包含基板處理區域，基板處理區域在噴淋頭的與電漿區域相對的一側上與噴淋頭接界。電漿區域可為經配置以容納欲處理之基板的本端電漿區域。區帶分配板和區帶阻隔板可以成形為盤狀且為同軸。第一岐管通道可包含窄通道部分與寬通道部分，寬通道部分設置為較接近區帶分配板。窄通道部分具有第一直徑，寬通道部分具有大於第一直徑的第二直徑。第一岐管通道可經配置以允許第一氣體在進入頂部內凹槽之前擴展並混合。
所揭示的具體實施例包括處理方法。方法包含在陽極與陰極之間施加RF功率。陽極與陰極為平面且平行，並在陽極與陰極之間設置電漿區域。陽極與陰極之每一者與電漿區域接界或鄰接。方法包含藉由使含氫前驅物流入電漿區域的中心，而形成含氫電漿。方法包含藉由進一步使含氟前驅物流入電漿區域，而形成含氫氟電漿。含氫前驅物與含氟前驅物首先彼此遭遇，並在電漿區域中結合。方法包含藉由使含氫前驅物停止流入電漿區域，而形成含氟電漿。
處理方法可處理基板或基板處理腔室的內部表面。陽極可為面板（或噴淋頭），陰極可為噴淋頭（或面板）。基板處理區域可以設置在噴淋頭的與電漿區域相對的一側。在另一具體實施例中，陽極可為噴淋頭（或基板底座），且陰極可為基板底座（或噴淋頭）。基板處理區域可被設置在陽極與陰極之間。基板處理區域可同時與陽極與陰極接界或鄰接。陽極、陰極與電漿區域可為圓形。含氫前驅物可包含氫（H2 ）和氨（NH3 ）中的一種。含氟前驅物可包含三氟化氮（NF3 ）。
所揭示的具體實施例包括基板處理系統。基板處理系統包含區帶分配岐管，區帶分配岐管具有第一岐管通道與第二岐管通道。基板處理系統進一步包含區帶分配板，區帶分配板固定至區帶分配岐管。區帶分配板具有內區通道與外區通道，內區通道經配置以接收來自第一岐管通道的第一氣體，外區通道經配置以接收來自第二岐管通道的第二氣體。基板處理系統包含區帶阻隔板，區帶阻隔板固定至區帶分配板。區帶阻隔板具有中心通孔與頂部外凹槽，中心通孔經配置成從內區通道接收第一氣體，頂部外凹槽經配置以從外區通道接收第二氣體。區帶阻隔板還可包括底部外凹槽，底部外凹槽通過外噴淋頭部分流體耦接到頂部外凹槽。半導體處理系統進一步包含面板，面板固定至區帶阻隔板。面板具有通孔，通孔經配置以使第二氣體輸入電漿區域。區帶阻隔板可以具有中央面板孔，中央面板孔配置成從中心通孔接收第一氣體並將第一氣體傳遞到電漿區域中。
區帶分配歧管、區帶分配板和區帶阻隔板可以配置成使得第一氣體和第二氣體在進入電漿區域之前不會混合。半導體處理系統可進一步包含噴淋頭，噴淋頭平行於面板。電漿區域可設置在面板與噴淋頭之間。電漿區域可同時鄰接面板與噴淋頭之每一者。半導體處理系統可進一步包含基板處理區域，基板處理區域在噴淋頭的與電漿區域相對的一側上與噴淋頭接界。電漿區域可為經配置以容納欲處理之基板的本端電漿區域。區帶分配板可包含複數個底孔，複數個底孔沿著以區帶阻隔板為中心圍繞的圓形平均設置。區帶分配板和區帶阻隔板可以成形為盤狀且為同軸。
所揭示的具體實施例包括電漿處理方法。方法包含藉由在陽極與陰極之間施加RF功率以形成含氫氟電漿。包含含氫前驅物與含氟前驅物之每一者的電漿區域，被設置在陽極與陰極之間。陽極與陰極為平面且彼此平行。方法進一步包含藉由從電漿區域移除含氫前驅物，而形成含氟電漿。
陽極可為面板（或噴淋頭），陰極可為另一元件（噴淋頭或面板）。基板處理區域可以設置在噴淋頭的與電漿區域相對的一側。在另一具體實施例中，陽極可為噴淋頭或基板底座，且陰極可為基板底座或噴淋頭（兩種元件中的另一者）。基板處理區域可被設置在陽極與陰極之間。基板處理區域可同時與陽極與陰極接界。陽極、陰極與電漿區域可為圓形。含氫前驅物可包含氫（H2 ）和氨（NH3 ）中的至少一種。含氟前驅物可包含三氟化氮（NF3 ）。
本技術包含改良式氣體分配設計，以在半導體處理作業期間形成均勻電漿，或用於處理半導體處理腔室的內部。雖然習知氣體分配組件可接收要被分配入電漿區域中的特定反應劑或反應劑比例，本文所述技術允許對反應劑輸入分配進行改良式控制。技術允許使反應劑個別流入電漿的不同區域，以抵銷所觀察到的製程均勻度中的任何異常。可將第一前驅物傳遞至在基板/底座中心上方的電漿中心，同時可將第二前驅物傳遞至在基板/底座外部部分上方的電漿外部部分。藉此，可執行改良式作業，因為位於底座上的基板可體驗到跨整體表面的更均勻的蝕刻或沈積輪廓。將於下文更詳細說明該等與其他的益處。
本文所說明的裝置的益處，包含對接近本端或遠端電漿中心的氣體，調整相較於遠離中心或接近電漿邊緣的氣體的濃度的能力。基板處理電漿是非常稀薄的並難以維持，特別是在流入電漿的優勢氣體含有高電負性原子時（諸如氟）。通常添加氬氣以幫助初始撞擊電漿，但由於空間限制，稀薄的電漿區域可仍不支持健康、穩定的同心電漿。氬氣太重以至於濺射(sputtering)可不合需要地損壞或減少基板處理腔室的內部部件的壽命。氦氣用於使電漿均勻，但不會改善初始撞擊能力和隨後的電漿穩定性。帶正電荷的氟離子非常難以產生，因此即使在電漿期間電子濃度也保持低–一些區域可維持電子擊穿級聯到損害電漿區域的其他部分中的電漿健康。本文說明的硬體，可提供使電漿更均勻的益處，及/或可提供使得整個電漿區域（跨越垂直於薄維度的維度）的處理（例如，移除速率）更均勻的益處。在一些情形中，本文說明的硬體甚至可用於（與本文所說明的處理一起）避免偏心的「瓦解」電漿（已在使用氟電漿時觀察到）。因此，本文說明的硬體與方法可用於形成同心電漿，這有益於電漿控制效果並亦使得處理更為均勻。
儘管其餘的揭示內容將常規地利用所揭示的技術識別特定的蝕刻處理，但將容易理解到，系統和方法同樣適用於在所述腔室中可能發生的沉積和清洗處理。因此，技術應不被視為僅限於使用在蝕刻處理。本揭示內容將討論一種可能的系統和腔室，其可與本技術一起使用，以根據所說明的本技術的具體實施例在對此系統進行額外的變化和調整之前，執行某些移除作業。
第1圖圖示根據具體實施例的具有沈積、蝕刻、烘烤與固化腔室的處理系統100的一個具體實施例的俯視平面圖。在圖式中，一對前開式晶圓傳送盒(FOUPs)102供應各種尺寸的基板，基板由機械臂104接收，並在放入位於串聯部分109a-c中的基板處理腔室108a-f之一者之前放入低壓固持區域106中。可使用第二機械臂110以將基板晶圓在固持區域106與基板處理腔室108a-f之間來回運輸。每一基板處理腔室108a-f可被配置以執行各種基板處理作業，包含本文所說明的乾式蝕刻處理，以及循環層沉積（CLD）、原子層沉積（ALD）、化學氣相沉積（CVD）、物理氣相沉積（PVD）、蝕刻、預清洗、脫氣、導向以及其他的基板處理。
基板處理腔室108a-f可包含一或更多個系統部件，以對基板晶圓上的介電薄膜進行沈積、退火、固化及/或蝕刻。在一個配置中，可使用兩對處理腔室（例如108c-d與108e-f）在基板上沈積介電材料，並可使用第三對處理腔室（例如108a-b）以蝕刻所沈積的介電質。在另一配置中，可使用全部三對腔室（例如108a-f）以在基板上蝕刻介電薄膜。所說明的處理的任一者或更多者，可被實行於與圖示於各種具體實施例中的製造系統分離的一或多個腔室中。將理解到系統100思及到對於介電薄膜的沈積、蝕刻、退火與固化腔室的額外配置。
第2A圖圖示示例性處理腔室201的截面圖，處理腔室201內具有分區電漿產生區域。在薄膜蝕刻期間內（例如氮化鈦、氮化鉭、鎢、矽、多晶矽、氧化矽、氮化矽、氮氧化矽、碳氧化矽等等），處理氣體可透過氣體入口組件205流入第一電漿區域215。可選地，系統可包含遠端電漿系統(RPS)202，RPS 202可處理第一氣體，第一氣體隨後行進通過氣體入口組件205。入口組件205可包含兩或更多個分異的氣體供應通道，其中第二通道（未圖示）可繞過RPS 202（若有包含）。
圖示冷卻板203、面板217、離子抑制件223、噴淋頭225與基板支座265（其上設置有基板255），該等每一者可根據具體實施例而被包含。底座265可具有熱交換通道，熱交換流體流動通過熱交換通道以控制基板溫度，在處理作業期間內可操作基板溫度以加熱及/或冷卻基板或晶圓。底座265的晶圓支撐板（可包含鋁、陶瓷或以上之結合）亦可使用嵌入式電阻式加熱器元件而受到電阻式加熱，以達到相當高的溫度，諸如從上至（或約）100°C直至1100°C以上（或約1100°C）。
面板217可以是金字塔形、圓錐形或其他類似結構，且頂部較窄而擴展到較寬的底部。此外如圖所示，面板217可以是平的，並且包括用於分配處理氣體的複數個通道。電漿產生氣體及/或電漿激發物質（取決於RPS 202的用途），可穿過在面板217中的複數個孔，如第2B圖所示，以更均勻地輸送到第一電漿區域215中。
示例性配置可包括使氣體入口組件205通向由面板217從第一電漿區域215分隔的氣體供應區域258，使得氣體/物質流過面板217中的孔進入第一電漿區域215。可選擇結構和操作特徵，以防止電漿從第一電漿區域215大量回流到供應區域258、氣體入口組件205和流體供應系統210中。面板217或腔室的導電頂部以及噴淋頭225，被圖示為具有位於特徵之間的絕緣環220，絕緣環220允許AC電位被相對於噴淋頭225及/或離子抑制器223施加到面板217。絕緣環220可以位於面板217和噴淋頭225及/或離子抑制器223之間，使得能夠在第一電漿區域中形成電容耦合電漿（CCP）。擋板（未示出）可另外位於第一電漿區域215中，或以其他方式與氣體入口組件205耦合，以影響通過氣體入口組件205進入區域的流體流動。
離子抑制器223可包括界定貫穿整個結構的複數個孔的板或其他幾何形狀，複數個孔配置成抑制離子帶電物質從第一電漿區域215遷移出來，同時允許不帶電的中性或自由基物質通過離子抑制器223進入抑制器和噴淋頭之間的活化氣體輸送區域。在具體實施例中，離子抑制器223可包括具有各種孔配置的多孔板。該等不帶電荷的物質可包括高反應性物質，高反應性物質與較少反應性的載氣(carrier gas)通過孔輸送。如上所述，離子物質通過孔的遷移可被減少，並且在一些情況下可被完全抑制。控制通過離子抑制器223的離子物質的量，可有利地提升對於接觸下方晶圓基板的氣體混合物的控制，這可相應提升對氣體混合物的沉積及/或蝕刻特性的控制。例如，調整氣體混合物的離子濃度可顯著改變氣體混合物的蝕刻選擇性，例如SiNx：SiOx蝕刻比、Si：SiOx蝕刻比等等。在進行沉積的替代性具體實施例中，這也可以改變對於介電材料的保形 - 可流動式沉積的平衡。
離子抑制器223中的複數個孔可以配置成控制活化氣體（即離子、自由基及/或中性物質）通過離子抑制器223。例如，可控制孔的縱橫比（孔徑與長度比），及/或孔的幾何形狀，以使得通過離子抑制器223的活化氣體中的離子帶電物質的流動被減少。離子抑制器223中的孔可包括面對電漿激發區域215的錐形部分，以及面對噴淋頭225的圓柱形部分。圓柱形部分的形狀和尺寸可被設置，以控制通向噴淋頭225的離子物質的流動。亦可對離子抑制器223施加可調節的電偏壓，作為控制離子物質流過抑制器的額外手段。
離子抑制器223可用於減少或消除從電漿產生區域行進到基板的離子帶電物質的量。不帶電的中性和自由基物質仍然可以通過離子抑制器中的開口以與基板反應。應當注意，在具體實施例中可不執行在基板周圍的反應區域中完全消除離子帶電物質。在某些情況下，離子物質旨在到達基板以執行蝕刻及/或沉積處理。在該等情況下，離子抑制器可幫助將反應區域中離子物質的濃度控制在有助於此處理的水平。
噴淋頭225與離子抑制器223的組合，可允許存在於第一電漿區域215中的電漿避免直接激發基板處理區域233中的氣體，同時仍然允許激發物質從腔室電漿區域215行進到基板處理區域233中。以這種方式，腔室可以配置成防止電漿接觸被蝕刻的基板255。這可以有利地保護在基板上圖案化的各種複雜結構和膜，若直接與產生的電漿接觸，則該等複雜結構和膜可能損壞、錯位或以其他方式翹曲。
在具體實施例中，離子抑制器（可以是噴淋頭）可用於提供用於氣相蝕刻的自由基及/或中性物質。離子抑制器也可以稱為離子抑制元件。例如，在具體實施例中，離子抑制器用於在從遠端電漿區域到基板處理區域的途中過濾蝕刻電漿流出物。離子抑制器可用於提供具有比離子更高的自由基濃度的反應性氣體。電漿流出物通過設置在遠端電漿區域和基板處理區域之間的離子抑制器。離子抑制器用於顯著減少或基本上消除從電漿產生區域行進到基板的離子物質。本文描述的離子抑制器，僅是在本文所述的氣相蝕刻處理期間在基板處理區域中實現低電子溫度的一種方式。
在具體實施例中，電子束在平行於基板的平面中穿過基板處理區域，以減少電漿流出物的電子溫度。若以這種方式施加電子束，則可以使用更簡單的噴淋頭。在具體實施例中，電子束可以作為設置在基板上方的層狀薄片通過。在具體實施例中，電子束提供中和負電荷源，並提供更有效的手段，以用於減少帶正電荷的離子流向基板並提高蝕刻選擇性。可調節電漿流出物的流動和控制電子束操作的各種參數，以降低在基板處理區域中量測的電子溫度。
在遠端電漿中激發電漿期間，可以使用Langmuir探針在基板處理區域中量測電子溫度。電子溫度可小於0.5eV、小於0.45eV、小於0.4eV、或小於0.35eV。通過電子束、噴淋頭及/或離子抑制器的存在，可以實現該等極低的電子溫度值。不帶電的中性和自由基物質可以通過電子束及/或離子抑制器中的開口，以在基板處反應。與包括濺射和轟擊的傳統電漿蝕刻處理相比，使用自由基和其他中性物質的這種處理可減少電漿損傷。本發明的實施例也優於傳統的濕式蝕刻處理，其中液體的表面張力可導致小特徵的彎曲和剝離。
在此描述的蝕刻處理期間，基板處理區域在本文中可描述為「無電漿」。「無電漿」並不一定意味著此區域沒有電漿。在電漿區域內產生的離子化物質和自由電子可以以非常小的濃度穿過隔板（噴淋頭）中的孔（縫隙）。腔室電漿區域中的電漿的邊界，可通過噴淋頭中的孔在基板處理區域上侵入一些小的程度。此外，可以在基板處理區域中產生低強度電漿，而不會消除本文所述的蝕刻處理的期望特徵。在產生激發的電漿流出物期間具有比腔室電漿區域低得多的強度離子密度的電漿的所有原因，不偏離本文所用的「無電漿」的範圍。
處理系統還可包括電源供應器240，電源供應器240與處理腔室電耦合，以向面板217、離子抑制器223、噴淋頭225及/或底座265提供電力，以在第一電漿區域215或處理區域233中產生電漿。電源供應器可以被配置為根據所執行的處理向腔室輸送可調節的功率量。這樣的配置可以允許將可調諧電漿用於正在執行的處理中。與遠端電漿單元不同（通常具有開啟或關閉功能），可調諧電漿可被配置為向電漿區域215輸送特定量的功率。這相應地可以允許開發特定的電漿特性，使得前驅物可以以特定方式解離，以增強由該等前驅物產生的蝕刻輪廓。
電漿可以在噴淋頭225上方的腔室電漿區域215中或者在噴淋頭225下方的基板處理區域233中被點燃。在具體實施例中，在基板處理區域233中形成的電漿可以是DC偏壓電漿，DC偏壓電漿由作為電極的基座形成。電漿可以存在於腔室電漿區域215中，以從例如含氟前驅物或其他前驅物的流入物中產生自由基前驅物。通常在射頻（RF）範圍內的AC電壓可以施加在處理腔室的導電頂部（諸如面板217）和噴淋頭225及/或離子抑制器223之間，以在沉積期間點燃腔室電漿區域215中的電漿。RF電源供應器可產生13.56 MHz的高RF頻率，但是也可以單獨產生其他頻率或者與13.56MHz頻率組合產生其他頻率。
第2B圖圖示影響通過面板217的處理氣體分佈的特徵的詳細視圖253。如第2A圖與第2B圖圖示，面板217、冷卻板203和氣體入口組件205相交以限定氣體供應區域258，處理氣體可以從氣體入口205輸送到氣體供應區域258中。氣體可以填充氣體供應區域258並且通過面板217中的孔259流到第一電漿區域215。孔259可以被配置為以基本上單向的方式引導流動，使得處理氣體可以流入處理區域233，但是可以在穿過面板217之後部分地或完全地防止回流到氣體供應區域258中。
用於處理腔室部分201的諸如噴淋頭225的氣體分配組件，可以被稱為雙通道噴淋頭（DCSH），並且在第3圖中描述的具體實施例中另外詳述。雙通道噴淋頭可提供允許在處理區域233外分離蝕刻劑的蝕刻處理，以在被輸送到處理區域之前限制腔室部件和彼此之間的相互作用。
噴淋頭225可包括上板214和下板216。板可彼此連接以在板之間限定容積218。板的連接可以是通過上板和下板提供第一流體通道219，並且通過下板216提供第二流體通道221。形成的通道可以被配置為僅通過第二流體通道221提供從容積218通過下板216的流體通路，並且第一流體通道219可以與板和第二流體通道221之間的容積218流體隔離。容積218可通過氣體分配組件225的側面流體性存取。
第3圖為根據具體實施例的與處理腔室一起使用的噴淋頭325的仰視圖。噴淋頭325可對應於第2A圖中所示的噴淋頭225。顯示第一流體通道219的視圖的通孔365可具有複數種形狀和構造，以便控制和影響前驅物通過噴淋頭225的流動。顯示第二流體通道221的視圖的小孔375，可以基本上均勻地分佈在噴淋頭的表面上，在通孔365之中為平均，並且可以有助於在前驅物離開噴淋頭時提供比其他配置更均勻的前驅物混合。
第4圖圖示根據本技術的具體實施例的示例性基板處理系統的部分截面示意圖。基板處理腔室1001包括區帶分配歧管1010，區帶分配歧管1010具有第一歧管通道1015和第二歧管通道1016。第一氣體可以流過第一歧管通道1015，第二氣體可以流過第二歧管通道1016。在具體實施例中，第一歧管通道1015和第二歧管通道1016分開，而防止第一氣體和第二氣體在區帶分配歧管1010內混合在一起。第一氣體可以從限制性更強的第一歧管通道1015擴展到限制較少的內部區域擴展區域1017中。
基板處理腔室1001還可以包括區帶分配板1029，區帶分配板1029可以固定到區帶分配歧管1010。區帶分配板1029還具有兩個單獨的流動通道，用於防止區帶分配板1029內的第一氣體和第二氣體之間的任何混合。區帶分配板1029具有內部區域通道1018，內部區域通道1018配置成從內部區域擴展區域1017接收第一氣體。區帶分配板1029還包括外區通道1019，外區通道1019經配置以從第二歧管通道1016接收第二氣體。可以包括密封件（例如，O形環），以在區帶分配板1029和區帶分配歧管在組裝期間彼此固定（如圖所示）時保持第一氣體和第二氣體之間的分離。
根據具體實施例，基板處理腔室1001還可以包括區帶阻隔板1033，區帶阻隔板1033可以固定到區帶分配板1029。區帶阻隔板1033具有頂部內凹槽1035和頂部外凹槽1034，頂部內凹槽1035經配置成從內區通道1018接收第一氣體，頂部外凹槽1034經配置以從外區通道1019接收第二氣體。區帶阻隔板1033還包括底部內凹槽1037，底部內凹槽1037通過內噴淋頭部分1032流體地耦接到頂部內凹槽1035。區帶阻隔板1033還可包括底部外凹槽1036，底部外凹槽1036通過外噴淋頭部分1031流體耦接到頂部外凹槽1034。基板處理腔室1001還可包括固定到區帶阻隔板1033的面板1039，面板1039具有通孔，通孔被配置成使第一氣體和第二氣體進入電漿區域。頂部內凹槽1035藉由分隔壁1051-1與頂部外凹槽1034橫向密封，分隔壁1051-1密封區帶分配板1029（例如，使用O形環）。底部內凹槽1037藉由分隔壁1051-2與底部外凹槽1036橫向密封，分隔壁1051-2密封面板1039（例如，使用O形環）。以這種方式，第一氣體和第二氣體在進入電漿區域1041之前不會彼此相遇。根據具體實施例，區帶分配歧管1010、區帶分配板1029和區帶阻隔板1033可以配置成使得第一氣體和第二氣體在進入電漿區域1041之前不會混合。
藉由RF電漿電源供應器1043在面板1039和噴淋頭1049之間施加電漿功率。由第一氣體和第二氣體的組合在電漿區域1041中形成電漿。剛剛描述的硬體的技術態樣，使得能夠跨越電漿區域1041的橫向維度調節第一氣體與第二氣體的比率。電絕緣插入件1042可以設置在面板1039和噴淋頭1049之間，以允許RF功率從RF電漿電源供應器1043相對於噴淋頭1049施加到面板1039。在噴淋頭1049下方，並且在基板處理區域壁1071內，可以設置有由基板支撐底座1065支撐的基板1055。
當面板1039處於RF電壓時，噴淋頭1049可以保持在地電位。在另一種配置中，面板1039可以接地，同時噴淋頭1049保持在RF電壓以由RF功率產生電漿。一般而言，陽極保持在地電位，而陰極處於RF電壓。在具體實施例中，陽極是面板1039（或噴淋頭1049），陰極為噴淋頭1049（或面板1039）。基板處理區域可以設置在噴淋頭1049的與電漿區域相對的一側並且與噴淋頭1049接界。剛剛描述的配置是遠端電漿，因為電漿不在基板處理區域內。
根據具體實施例，本文描述的方法和硬體還可用於改善本端電漿及/或本端電漿處理的均勻性。RF電漿功率可以從RF電漿電源供應器1043相對於基板支撐底座1065施加到面板1039，或者相對於面板施加到基板支撐底座1065。在具體實施例中，當形成本端電漿時，不存在噴淋頭1049。在本端電漿配置中，陽極是面板1039（或基板支撐底座1065），陰極為基板支撐底座1065（或面板1039）。基板處理區域設置在陽極和陰極之間，並且基板處理區域鄰接陽極和陰極。
根據具體實施例，區帶分配板和區帶阻隔板可以是圓形的，並且可以成形為盤狀。在具體實施例中，區帶分配板和區帶阻隔板可以是同軸的。
第5A圖圖示根據本技術的具體實施例的示例性阻隔板的部分截面示意圖。第5B圖圖示根據本技術的具體實施例的示例性區帶阻隔板的俯視圖。第5C圖圖示根據本技術的具體實施例的示例性區帶阻隔板的仰視圖。描繪了在固定到區帶分配板或面板之前的區帶阻隔板1133。區帶阻隔板1133具有頂部外凹槽1134和頂部內凹槽1135，頂部外凹槽1134和頂部內凹槽1135由分隔壁1151-1分開。區帶阻隔板1133還具有由分隔壁1151-2分開的底部外凹槽1136和底部內凹槽1137。外噴淋頭1160設置在頂部外凹槽1134和底部外凹槽1136之間，並且經配置以使第二氣體穿過外通孔1140。內噴淋頭1161設置在頂部內凹部1135和底部內凹部1137之間，並且經配置以使第一氣體穿過內通孔1141。
根據具體實施例，內噴淋頭1161可以是圓形的，並且可以由區帶阻隔板1133的中心為中心。在具體實施例中，如圖所示，外噴淋頭1160可以是環形的，並且可以由內噴淋頭1161的中心及/或區帶阻隔板1133的中心為中心。根據具體實施例，可選擇外噴淋頭1160的面積相對於內噴淋頭1161的面積的比率為有益於電漿或處理均勻性，並且可將通孔的尺寸和密度在外部與內部噴淋頭兩者上保持為恆定。在具體實施例中，對於外噴淋頭和內噴淋頭，通孔的密度可以彼此不同。根據具體實施例，內噴淋頭中的通孔的尺寸可以與外噴淋頭中的通孔不同。
在具體實施例中，第一氣體可流過內噴淋頭，第二氣體可流過外噴淋頭，並且內噴淋頭可以在外噴淋頭面積的25％至75％之間、在30％至70％之間、在35％至65％之間、或在40％至60％之間。內噴淋頭和外噴淋頭的通孔密度可以相同。根據具體實施例，內噴淋頭的通孔的尺寸也可以與外噴淋頭的通孔的尺寸相同。分隔壁和外凸緣的面積不包括在面積計算中。在具體實施例中，頂部O形環1150-1可以可選地用於改善頂部外凹槽1134和頂部內凹槽1135之間的密封。類似地，在具體實施例中，在組裝時，底部O形環1150-2可以可選地用於改善底部外凹槽1136和底部內凹槽1137之間的密封。可以選擇內部噴淋頭和外部噴淋頭的尺寸以便於使用標準的O形環尺寸。外噴淋頭的外徑可以是大約12英寸或更大，用於處理12英寸的圓形基板或晶圓。根據具體實施例，內噴淋頭的直徑可為4英寸至10英寸之間、5英寸至9英寸之間、或6英寸至8英寸。在具體實施例中，外噴淋頭的內徑可大於4英寸、大於5英寸、大於6英寸、或大於7英寸。根據具體實施例，外噴淋頭的外徑可小於十四英寸或小於十三英寸。對於靠近外噴淋頭區域的內噴淋頭區域，第一氣體的總流量可大致類似於第二氣體的流動速率（若通孔的密度和幾何形狀相同）。從這種設計開始，可以簡化對於一些處理的第一氣體與第二氣體的流動速率比的優化。其他類型的過程將在本文的後續討論中引入。
根據具體實施例，內噴淋頭可具有直徑在0.1mm和3mm之間、在0.3mm和2mm之間、或在0.5mm和1.5mm之間的通孔。這裡給出的直徑，描述了在直徑隨著通孔變化的情況下的最窄直徑。根據具體實施例，外噴淋頭可具有直徑在0.1mm和3mm之間、在0.3mm和2mm之間、或在0.5mm和1.5mm之間的通孔。在具體實施例中，內噴淋頭可具有30至2,000個通孔、50至1,000個通孔、或100至500個通孔。根據具體實施例，外噴淋頭可具有30至2,000個通孔、50至1,000個通孔、或100至500個通孔。可以使用通孔總數的範圍結合相應噴淋頭的尺寸範圍，來計算內噴淋頭或外噴淋頭中的通孔密度範圍。在具體實施例中，內噴淋頭的開口面積可在總和面積的0.1％至50％之間、0.2％至30％之間、0.5％至15％之間、或1％至10％之間。在具體實施例中，外噴淋頭的開口面積可在總和面積的0.1％至50％之間、0.2％至30％之間、0.5％至15％之間、或1％至10％之間。
已經發現一些處理受益於被相對較厚的環形外噴淋頭包圍的相對較小的內噴淋頭。本文將呈現示例性處理。第一氣體（中心氣體）可以幫助形成穩定的電漿，此電漿的主要成分是第二氣體。在具體實施例中，第一氣體可流過內噴淋頭，第二氣體可流過外噴淋頭，並且內噴淋頭可以低於外噴淋頭面積的25％、低於外噴淋頭面積的20％、低於外噴淋頭面積的15％、低於外噴淋頭面積的10％、低於外噴淋頭面積的5％、或低於外噴淋頭面積的4％。根據具體實施例，內噴淋頭的直徑可小於外噴淋頭直徑的10％、小於外噴淋頭直徑的9％、小於外噴淋頭直徑的8％、小於外噴淋頭直徑的7％、小於外噴淋頭直徑的6％、或小於外噴淋頭直徑的5％。根據具體實施例，第一氣體可以簡單地流過區帶阻隔板的中心處的單個通孔。外噴淋頭中的通孔的尺寸可為如前所述。在具體實施例中，若存在，內噴淋頭可擁有具有前述尺寸的通孔。或者，根據具體實施例，中心處的單個通孔的直徑可在0.1mm和3mm之間、在0.3mm和2mm之間、在0.5mm和1.5mm之間、或小於3mm。在具體實施例中，中心處的單個通孔可以在正上方對準面板中的中心孔，面板設置在區帶阻隔板下方。
根據具體實施例，外頂部凹部的厚度可以在1mm和5mm之間或者在2mm和4mm之間。外頂部凹槽的厚度可以與內頂部凹槽的厚度大致相同。在具體實施例中，內頂部凹槽可具有1mm至5mm之間或2mm至4mm之間的厚度。根據具體實施例，外底部凹部的厚度可以在1mm和5mm之間或者在2mm和4mm之間。外底部凹槽的厚度可以與內底部凹槽的厚度大致相同。在具體實施例中，內底部凹槽可具有1mm至5mm之間或2mm至4mm之間的厚度。根據具體實施例，外噴淋頭的厚度可以在1mm和5mm之間或者在2mm和4mm之間。外噴淋頭的厚度可以與內噴淋頭的厚度大致相同。在具體實施例中，內噴淋頭可具有1mm至5mm之間或2mm至4mm之間的厚度。
第6A圖圖示根據本技術的具體實施例的示例性區帶分配板的俯視圖。第6B圖圖示根據本技術的具體實施例的示例性區帶分配板的仰視圖。區帶分配板1233具有中心通孔1241，中心通孔1241配置成使第一氣體進入區帶阻隔板的頂部內凹槽。區帶分配板1233具有形成在頂表面中的頂部溝槽1261，頂部溝槽1261配置成形成用於使第二氣體進入區帶阻隔板的頂部外凹槽的通道。在組裝時，區帶分配歧管的底表面與頂部溝槽1261的組合，可以藉由向上壓靠區帶分配板1233的頂部而形成第二氣體通道。在組裝時，頂部溝槽1261配置成將第二氣體從起始點傳導到複數個底部孔1255，底部孔1255穿過區帶分配板1233的底部並進入區帶阻隔板的頂部外凹部。頂部溝槽1261可以被配置為在起始點（由區帶分配歧管的第二歧管通道的末端決定）從第二歧管通道接收第二氣體。根據具體實施例，對於複數個底孔中之每一者，從起始點沿著溝槽到複數個底孔中之每一者的路徑長度可以是相同的。根據具體實施例，複數個底孔可包括至少兩個底孔、至少四個底孔、至少六個底孔、至少八個底孔、或至少十個底孔。複數個底孔可包括偶數個底孔。複數個底孔可以圍繞以區帶分配板1233的中心為中心的圓佈置。在具體實施例中，複數個底孔可以沿著圓均勻地（以相等的間距）佈置。
根據具體實施例，中心通孔的直徑可以在0.1mm和30mm之間、在0.5mm和20mm之間、或者在1mm和5mm之間。在具體實施例中，複數個底孔中之每一者可具有相同的尺寸，並且直徑可在0.1mm和10mm之間、在0.3mm和5mm之間、或者小於3mm。根據具體實施例，頂部溝槽1261的寬度可在1mm至10mm之間、2mm至8mm之間、或3mm至7mm之間。各種結構的頂部溝槽126可以實現相同的路徑長度目標，然而第6A圖描繪了一個選項。頂部溝槽1261可以在距中心通孔1241的第一半徑處的起始點1260處開始。頂部溝槽1261可以具有在第一半徑下的圓周部分，接著是從中心通孔1241向外延伸到第二半徑的徑向部分。頂部溝槽1261可以具有一百八十度的圓周部分，此圓周部分將在第二半徑下的徑向部分二等分。兩個徑向部分從一百八十度圓周部分的末端延伸到第三半徑。頂部溝槽1261的兩個徑向部分中之每一者，可以將兩個90度圓周部分中之每一者平分。兩個90度圓周部分的每個末端連接到四個附加的徑向部分，該等徑向部分從第三半徑開始並延伸到第四半徑。最後，四個四十五度的圓周部分被在第四半徑下的四個附加徑向部分一分為二。四個四十五度圓周部分中之每一者，可以終止於區帶分配板1233的八個底孔中的一個。每個所述的圓周部分可以圍繞區帶分配板1233的中心。根據具體實施例，第四半徑可以大於第三半徑、第三半徑可以大於第二半徑、且第二半徑可以大於第一半徑。所述結構表示將第一氣體輸送到頂部內凹槽並將第二氣體輸送到頂部外凹槽的一種方式。可在區帶分配板1233的底部上包含O形環1251，以將頂部內凹槽與頂部外凹槽在區帶阻隔板上密封。
第7圖圖示根據本技術的具體實施例的區帶分配岐管1311的部分截面示意圖。區帶分配歧管具有第一歧管通道1321和第二歧管通道1331。第一歧管通道1321與膨脹區域1322流體耦接，以在第一氣體通過區帶分配板的中心通孔進入頂部內凹槽之前改善第一氣體的內部混合。可以包括內區通道O形環1341，以進一步分離第一氣體與第二氣體以避免過早混合。第二歧管通道1331被流體耦接，以使第二氣體通過區帶分配板的頂部溝槽，然後通過多個底孔進入區帶阻隔板的頂部外凹槽。在具體實施例中，可以包括外區通道O形環1342以保持第一氣體和第二氣體之間的分離。根據具體實施例，第一歧管通道可具有圓形橫截面並且直徑大於2mm、大於5mm或大於10mm。在具體實施例中，第二歧管通道可具有圓形橫截面並且直徑大於2mm、大於5mm或大於10mm。根據具體實施例，擴展區域可具有圓形橫截面並且直徑大於5mm、大於10mm或大於15mm。
第8A圖與第8B圖圖示根據本技術的具體實施例的示例性基板處理系統的部分截面示意圖。說明所圖示的硬體以顯示處理問題，該等問題可透過本文提出的技術態樣來克服。在基板處理系統中形成含氟電漿，含氟電漿顯示出由本文所述方法和系統解決的不穩定性。基板處理腔室1401包括區帶分配歧管1410，區帶分配歧管1410具有第一歧管通道1415和第二歧管通道1416。含氫前驅物偶爾流過第一歧管通道1415，含氟前驅物流過第二歧管通道1416。含氫前驅物從第一歧管通道1415擴展到擴展區域1417中。基板處理腔室1401還可以包括區帶分配板1429，區帶分配板1429固定到區帶分配歧管1410。含氫前驅物從擴展區域1417流入內區通道1418。含氟前驅物從第二歧管通道1416流入外區通道1419。兩個通道是分開的，並且在所繪製的硬體中不發生混合，直到含氫前驅物和含氟前驅物離開區帶分配板1429。
根據具體實施例，基板處理腔室1401還可以包括區帶阻隔板1433，區帶阻隔板1433固定到區帶分配板1429。區帶阻隔板1433具有頂部凹槽1435，頂部凹槽1435配置成從內區通道1418接收含氫前驅物。與第4圖的硬體相反，頂部凹槽1435還配置成從外區通道1419接收含氟前驅物。在這種情況下，沒有分隔壁，因此兩種前驅物可以混合。區帶阻隔板1433包括底部內凹槽1437，底部內凹槽1437通過內噴淋頭部分流體耦接到頂部凹槽1435。區帶阻隔板1433還可包括底部外凹槽1436，底部外凹槽1436通過外噴淋頭部分流體耦接到頂部凹槽1435。基板處理腔室1401還可包括固定到區帶阻隔板1433的面板1439，面板1439具有通孔，通孔被配置成使含氫前驅物及/或含氟前驅物進入電漿區域以形成電漿1441-1。藉由RF電漿電源供應器1443在面板1439和噴淋頭1449之間施加電漿功率。電絕緣插入件1442可以設置在面板1439和噴淋頭1449之間，以允許RF功率從RF電漿電源供應器1443相對於噴淋頭1449施加到面板1439。在噴淋頭1449下方，並且在基板處理區域壁1471內，可以設置有由基板支撐底座1465支撐的基板1455。
最初在沒有含氫前驅物之下，從含氟前驅物在電漿區域中形成電漿1441-1。儘管氟電漿1441-1可以開始在電漿區域內集中，但是已經觀察到不穩定性，這可能導致初始氟電漿1441-1塌陷成偏心氟電漿1441-2。偏心氟電漿1441-2可以位於電漿區域的邊緣上，並且佔據圓形電漿區域的不到一半或小於四分之一。偏心電漿可能導致不可接受的製程變異。潔淨電漿與基板處理電漿是非常稀薄的並難以維持，特別是在流入電漿的優勢氣體含有高電負性原子時（諸如氟）。帶正電荷的氟離子非常難以產生，因此即使在電漿期間電子濃度也保持低。該等特性可能導致觀察到的偏心電漿。
本文提出了兩種技術，它們可以單獨使用或組合使用，以提供電漿不穩定性的解決方案。本文說明的硬體甚至可用於（與本文所說明的處理一起）避免偏心的「瓦解」電漿（已在使用氟電漿時觀察到）。因此，本文說明的硬體與方法可用於形成集中且同心的電漿，這有益於電漿控制效果並亦使得處理更為均勻。
第9A圖至第9E圖圖示根據本技術的具體實施例的示例性基板處理系統的部分截面示意圖。所示硬體部分地解決了第8B圖中所示的電漿不穩定性。基板處理腔室1501-1包括區帶分配歧管1510，區帶分配歧管1510具有第一歧管通道1515和第二歧管通道1516。含氫前驅物流過第一歧管通道1515，含氟前驅物流過第二歧管通道1516。含氫前驅物從第一歧管通道1515擴展到擴展區域1517中。基板處理腔室1501-1還可以包括區帶分配板1529，區帶分配板1529固定到區帶分配歧管1510。含氫前驅物從擴展區域1517流入內區通道1518。含氟前驅物從第二歧管通道1516流入外區通道1519。兩個通道是分開的，並且在所繪製的硬體中不發生混合，直到含氫前驅物和含氟前驅物進入下游的電漿區域。在具體實施例中，外區通道1519可以包括形成在區帶分配板1529的頂部中的溝槽，或者可以包括形成在區帶分配板1529內部的通道，如圖所示。
根據具體實施例，基板處理腔室1501-1還可以包括區帶阻隔板1533-1，區帶阻隔板1533-1固定到區帶分配板1529。區帶阻隔板1533-1具有頂部內凹槽1535，頂部內凹槽1535配置成從內區通道1518接收含氫前驅物。區帶阻隔板1533-1具有頂部內凹槽1535，頂部內凹槽1535配置成從外區通道1519接收含氟前驅物。分隔壁防止含氫前驅物與含氟前驅物混合。區帶阻隔板1533-1包括底部內凹槽1537，底部內凹槽1537通過內噴淋頭部分流體耦接到頂部內凹槽1535。區帶阻隔板1533-1還可包括底部外凹槽1536，底部外凹槽1536通過外噴淋頭部分流體耦接到頂部外凹槽1534。基板處理腔室1501-1還可包括固定到區帶阻隔板1533-1的面板1539，面板1539具有通孔，通孔被配置成使含氫前驅物及/或含氟前驅物進入電漿區域以形成電漿1541-1。藉由RF電漿電源供應器1543在面板1539和噴淋頭1549之間施加電漿功率。電絕緣插入件1542可以設置在面板1539和噴淋頭1549之間，以允許RF功率從RF電漿電源供應器1543相對於噴淋頭1549施加到面板1539。
根據具體實施例，最初在沒有含氟前驅物之下，從含氫前驅物在電漿區域中形成電漿1541-1。一旦氫電漿開始，含氟前驅物就流入電漿區域。電漿中的氫更容易失去電子，並有助於引發含氟前驅物的健康電漿1541-2。一旦健康的電漿1541-2開始，則可以關閉或關斷流入電漿區域的含氫前驅物。已經觀察到，以這種方式形成的氟電漿更密集並且理想地位於電漿區域的中心。藉由開始單獨使含氟前驅物流到氟電漿1541-2的中心（例如，使用第一歧管通道1515而不是第二歧管通道1516），進一步測試氟電漿1541-2的穩定性。氟電漿1541-2向側面移動以形成偏斜的氟電漿1541-3。然而，根據具體實施例，一旦含氟前驅物被關閉或關斷，則氟電漿1541-4返回到中心（並且具有相同的高強度）。
電漿中的氫原子可以更容易地或自由地向電漿提供電子，並且所提供的電子引發電漿中氟原子的更全面的電離。藉由使用（例如）第一歧管通道使含氫前驅物流到電漿區域的中心，可以有利地影響氫原子的引入。引入「新鮮的」含氟前驅物（難以電離）試圖撲滅電漿，因為在此階段同時沒有氫源。作為回應，電漿向側面推動，但是儘管沒有氫氣並且存在新的含氟前驅物流，但是顯著的初始電離仍然存在。介紹額外的含氟前驅物流的引入，是為了建立氟電漿的穩定性和健康，而不是提出理想的處理流程。
可使用額外的具體實施例，以產生穩定的氟電漿1541-2以及可能的其他處理。在具體實施例中，區帶阻隔板1533-2可具有形成在內通道插入件1540中的中心通孔。中心通孔可以配置成從內區通道1518接收第一氣體（例如含氫前驅物）。區帶阻擋板1533-2可包括頂部外凹槽1534，頂部外凹槽1534配置成從外區通道1519接收第二氣體（例如含氟前驅物）。區帶阻隔板1533-2還可包括底部外凹槽1536，底部外凹槽1536通過外噴淋頭部分流體耦接到頂部外凹槽1534。區帶阻隔板1533-2還可包括固定到區帶阻隔板1533-2的面板1539，面板1539具有通孔，通孔被配置成使第二氣體進入電漿區域。區帶阻隔板1533-2可以具有中央面板孔，中央面板孔配置成從內部通道插入件1540中的中心通孔接收第一氣體並將第一氣體傳遞到電漿區域中以形成電漿1541-1。藉由執行含氫前驅物序列（如上所述），基板處理腔室1501-2可用於形成穩定的氟電漿1541-2。在這種情況下，含氫前驅物將流過內通道插入件1540（通過中心通孔）。
第10圖與第11圖圖示根據本技術的具體實施例的用於形成電漿的方法。第12圖圖示根據本技術的具體實施例的在處理期間的示例性電漿參數圖表。形成電漿的方法1601，包括在作業1605中使含氫前驅物流入電漿區域。在作業1610中，將RF電漿功率施加到電漿區域以從含氫前驅物形成電漿。根據具體實施例，在電漿區域中不存在氟。在具體實施例中，氟濃度可以小於氫濃度（以原子濃度量測）、小於氫濃度的50％、小於氫濃度的20％、小於氫濃度的10％、或小於氫濃度的5％。根據具體實施例，含氫前驅物可以在啟動RF功率之前流入電漿區域，或者可以在將含氫前驅物流入電漿區域之前首先施加RF功率。在圖12中，曲線1801示出了在流動含氫前驅物1820之前施加的RF功率1810。
方法1601還包括在作業1615中使含氟前驅物流入電漿區域。含氟前驅物的流動在第12圖所示的曲線1801中表示為1830。然後，在作業1619，施加的RF功率激發含氫前驅物和含氟前驅物的混合物，以在電漿區域中形成更強的電漿。在作業1620中，可以停止含氫前驅物進入電漿區域的流動。在作業1625中，RF功率的持續施加產生氟電漿。在具體實施例中，儘管氫不再存在，但氟電漿已經永久地改變，並且對於在製造環境中不可避免地發生的各種不穩定力而言可能更穩定。在作業1630中關閉RF電漿功率，並且停止含氟前驅物的流動。
在第11圖中，在作業1705中，從含氫前驅物和含氟前驅物的混合物在電漿區域中形成RF電漿。在作業1710中，從電漿區域移除含氫前驅物。然後，在作業1720中，僅從含氟前驅物在電漿區域中形成RF電漿。在作業1730中關閉RF電漿功率，並且停止含氟前驅物的流動。根據具體實施例，可以在停止含氟前驅物的流動之前或之後關閉RF電漿功率。
在具體實施例中，含氫前驅物可以流入電漿區域1秒至30秒、2秒至20秒、或3秒至15秒之間。
在本文所述的所有具體實施例中，第一氣體（例如氫氣）的流動可由第一質量流量控制器（MFC）控制，第二氣體（例如氟氣）的流動可由第二質量流量控制器控制。第一質量流量控制器和第二質量流量控制器可以位於基板處理腔室外部並且位於區帶分配歧管的上游。根據具體實施例，示例性含氫前驅物的流動可以在1sccm和200sccm之間、在5sccm和100sccm之間、或在10sccm和50sccm之間。根據具體實施例，示例性含氟前驅物的流動可以在20sccm和5000sccm之間、在50sccm和2000sccm之間、或在100sccm和1000sccm之間。與含氟前驅物相比，含氫前驅物可以以低得多的流速產生強且穩定的氟電漿。在每種前驅物的流動中包括氦氣流作為載氣。然而，氦通常使電漿均勻，將氦流入電漿區域不足以避免本文所述的坍塌的氟電漿。在早期電漿階段包含含氫前驅物，避免了電漿坍塌。
電漿區域中的壓力影響氟電漿坍塌的可能性。在較低壓力下，氟電漿可以保持均勻，而不需要初始存在含氫前驅物。增加氟電漿中的壓力會增加氟電漿坍塌的可能性，並且可能與氟原子的高電負性和平均自由程(mean free path)的減少有關。根據具體實施例，電漿區域中的壓力可以大於2托、大於3托、大於4托、大於5托、大於6托、或大於7托。
施加到電漿區域的電漿功率也影響氟電漿塌陷的可能性。電漿功率的增加也可能導致氟電漿的概率更高。包括如本文所述的早期暴露於氫氣，已導致在高電漿功率下的穩定電漿。在具體實施例中，RF電漿功率可以大於200瓦、大於300瓦、大於400瓦、大於500瓦、或大於750瓦。
根據具體實施例，第一氣體可以是含氫前驅物，第二氣體可以是含氟前驅物。或者，第一氣體可以是具有第一原子濃度比的氫氟組合，第二氣體可以具有第二原子濃度比。第二原子濃度比可以與第一原子濃度比不同。在具體實施例中，這樣的配置使得能夠對通常的處理均勻性進行微妙的調整，並且在這種情況下，第一氣體和第二氣體都可以在整個基板處理持續期間中存在。含氫前驅物可以是氫（H2 ）和氨（NH3 ）中的一種，含氟前驅物可以是三氟化氮（NF3 ）。
在上文說明中，為了解釋的目的，闡述了多種細節，以期通透瞭解本技術的各種具體實施例。然而在本發明技術領域中具有通常知識者將顯然瞭解到，特定具體實施例的實作可並不需要該等特定細節的一些（或是需要額外的細節）。
在已揭示了數種具體實施例之後，在本發明技術領域中具有通常知識者將理解到，可使用各種修改、替代性結構與均等範圍，而不脫離所揭示具體實施例的精神。此外，並未說明一些為人熟知的處理與要素，以避免不必要地遮蔽本技術。因此，上文的說明不應被視為限制技術的範圍。
在提供一系列值的情況下，應當理解，除非上下文另有明確規定，否則還具體揭示了此範圍的上限和下限之間的每個中間值，至下限單位的最小部分。在所述範圍內的任何陳述值或未陳述的介入值與所述範圍內的任何其他陳述或介入值之間的任何較窄範圍都包括在內。該等較小範圍的上限和下限可以獨立地包括在此範圍內或排除在此範圍內，且包含上下限之一者、兩者、或皆不包含的較小範圍中的每一範圍也被包含在本技術內，且受制於所陳述範圍中任何特別排除的限制。在所陳述的範圍包含上下限之一者或兩者時，也包含了排除了該等上下限之任一者或兩者的範圍。
說明書與附加申請專利範圍中所使用的單數形式「一(a)」、「一(an)」以及「該」，包含複數的參照物，除非背景內容清楚表示並非如此。因此，例如，對「一層」的參照，包含複數個此種層，且對於「此前驅物」的參照，包含對於一或更多種前驅物的參照以及在本發明技術領域中具有通常知識者所能知的均等範圍，諸如此類。
此外，本說明書和下列申請專利範圍中使用的詞語「包含(comprise(s))」、「包含(comprising)」、「含有(contain(s))」、「含有(containing)」、「包括(include(s))」和「具有(including)」，意為指明所陳述的特徵、整數、部件、或作業的存在，但他們不排除存在或添加一個或多個其他特徵、整數、部件、作業、步驟、或組。
100:處理系統 102:前開式晶圓傳送盒(FOUPs) 104:機械臂 106:低壓固持區域 108a-f:基板處理腔室 109a-c:串聯部分 110:第二機械臂 201:處理腔室 202:遠端電漿系統(RPS) 203:冷卻板 205:氣體入口組件 210:流體供應系統 214:上板 215:第一電漿區域 216:下板 217:面板 218:容積 219:第一流體通道 220:絕緣環 221:第二流體通道 223:離子抑制件 225:噴淋頭 233:基板處理區域 240:電源供應器 255:基板 258:氣體供應區域 259:孔 265:基板支座 325:噴淋頭 365:通孔 375:小孔 1001:基板處理腔室 1010:區帶分配歧管 1015:第一歧管通道 1016:第二歧管通道 1017:內部區域擴展區域 1018:內部區域通道 1019:外區通道 1029:區帶分配板 1031:外噴淋頭部分 1032:內噴淋頭部分 1033:區帶阻隔板 1034:頂部外凹槽 1035:頂部內凹槽 1036:底部外凹槽 1037:底部內凹槽 1039:面板 1041:電漿區域 1042:電絕緣插入件 1043:RF電漿電源供應器 1049:噴淋頭 1051-1:分隔壁 1051-2:分隔壁 1055:基板 1065:基板支撐底座 1071:基板處理區域壁 1133:區帶阻隔板 1134:頂部外凹槽 1135:頂部內凹槽 1136:底部外凹槽 1137:底部內凹槽 1140:外通孔 1141:內通孔 1150-1:頂部O形環 1150-2:底部O形環 1151-1:分隔壁 1151-2:分隔壁 1160:外噴淋頭 1161:內噴淋頭 1233:區帶分配板 1241:中心通孔 1251:O形環 1255:底部孔 1260:起始點 1261:頂部溝槽 1311:區帶分配岐管 1321:第一歧管通道 1322:膨脹區域 1331:第二歧管通道 1341:內區通道O形環 1342:外區通道O形環 1401:基板處理腔室 1410:區帶分配歧管 1415:第一歧管通道 1416:第二歧管通道 1417:擴展區域 1418:內區通道 1419:外區通道 1429:區帶分配板 1433:區帶阻隔板 1435:頂部凹槽 1436:底部外凹槽 1437:底部內凹槽 1439:面板 1441-1:初始氟電漿 1441-2:偏心氟電漿 1442:電絕緣插入件 1443:RF電漿電源供應器 1449:噴淋頭 1455:基板 1465:基板支撐底座 1471:基板處理區域壁 1501-1:基板處理腔室 1501-2:基板處理腔室 1510:區帶分配歧管 1515:第一歧管通道 1516:第二歧管通道 1517:擴展區域 1518:內區通道 1519:外區通道 1529:區帶分配板 1533-1:區帶阻隔板 1533-2:區帶阻隔板 1534:頂部外凹槽 1535:頂部內凹槽 1536:底部外凹槽 1537:底部內凹槽 1539:面板 1541-1:電漿 1541-2:健康電漿 1541-3:偏斜的氟電漿 1541-4:氟電漿 1542:電絕緣插入件 1543:RF電漿電源供應器 1549:噴淋頭 1601:方法 1605-1630:作業 1701:方法 1705-1730:作業 1801:曲線 1810:RF功率 1820:含氫前驅物的流動 1830:含氟前驅物的流動
參照說明書的其餘部分與圖式，可進一步理解所揭示技術的本質與優點。
第1圖圖示根據本技術的具體實施例的示例性處理系統的俯視平面圖。
第2A圖圖示根據本技術的具體實施例的示例性處理腔室的截面示意圖。
第2B圖圖示根據本技術的具體實施例的示例性噴淋頭的詳細視圖。
第3圖圖示根據本技術的具體實施例的示例性噴淋頭的仰視平面圖。
第4圖圖示根據本技術的具體實施例的示例性基板處理系統的部分截面示意圖。
第5A圖圖示根據本技術的具體實施例的示例性阻隔板的部分截面示意圖。
第5B圖圖示根據本技術的具體實施例的示例性區帶阻隔板的俯視圖。
第5C圖圖示根據本技術的具體實施例的示例性區帶阻隔板的仰視圖。
第6A圖圖示根據本技術的具體實施例的示例性區帶分配板的俯視圖。
第6B圖圖示根據本技術的具體實施例的示例性區帶分配板的仰視圖。
第7圖圖示根據本技術的具體實施例的區帶分配岐管的部分截面示意圖。
第8A圖圖示根據本技術的具體實施例的示例性基板處理系統的部分截面示意圖。
第8B圖圖示根據本技術的具體實施例的示例性基板處理系統的部分截面示意圖。
第9A圖圖示根據本技術的具體實施例的示例性基板處理系統的部分截面示意圖。
第9B圖圖示根據本技術的具體實施例的示例性基板處理系統的部分截面示意圖。
第9C圖圖示根據本技術的具體實施例的示例性基板處理系統的部分截面示意圖。
第9D圖圖示根據本技術的具體實施例的示例性基板處理系統的部分截面示意圖。
第9E圖圖示根據本技術的具體實施例的示例性基板處理系統的部分截面示意圖。
第10圖圖示根據本技術的具體實施例的用於形成電漿的方法。
第11圖圖示根據本技術的具體實施例的用於形成電漿的方法。
第12圖圖示根據本技術的具體實施例的在處理期間的示例性電漿參數圖表。
數個圖式被包含以作為示意圖。應瞭解到圖示係用於說明，且不應被視為具有實際尺寸比例，除非特定說明其為實際尺寸比例。此外，作為示意圖，圖式被提供以幫助理解，且可不包含相較於實際呈現的所有態樣或資訊，並可包含誇大的內容以供說明。
在附加圖式中，類似的部件及/或特徵可具有相同的元件符號。再者，相同類型的各個部件，可由元件符號之後的字母來分辨，此字母分辨類似的部件。若說明書中僅使用了首個元件符號，則其說明可適用於具有相同的首個元件符號的類似部件之任意者，不論其字尾字母為何。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
1001:基板處理腔室
1010:區帶分配歧管
1015:第一歧管通道
1016:第二歧管通道
1017:內部區域擴展區域
1018:內部區域通道
1019:外區通道
1029:區帶分配板
1031:外噴淋頭部分
1032:內噴淋頭部分
1033:區帶阻隔板
1034:頂部外凹槽
1035:頂部內凹槽
1036:底部外凹槽
1037:底部內凹槽
1039:面板
1041:電漿區域
1042:電絕緣插入件
1043:RF電漿電源供應器
1049:噴淋頭
1051-1:分隔壁
1051-2:分隔壁
1055:基板
1065:基板支撐底座
1071:基板處理區域壁

Claims (13)

  1. 一種基板處理系統，包含：一分配岐管，該分配岐管限定一第一岐管通道與一第二岐管通道；一分配板，該分配板與該分配岐管耦接，其中該分配板限定一第一通道與一第二通道，該第二通道與該第一通道流體隔離，且該第二通道由該分配歧管的一底表面與形成於該分配板的一頂表面的一頂部溝槽的組合所形成，並且該頂部溝槽連接至複數個底孔；一面板，該面板限定通孔；一噴淋頭，該噴淋頭平行於該面板；一電漿區域，該電漿區域被設置在該面板與該噴淋頭之間；以及一阻隔板，該阻隔板定位在該面板和該分配板中的每個之間並與之接觸，其中該阻隔板限定該阻隔板內的一內部凹槽和該阻隔板內的一外部凹槽，該外部凹槽在該內部凹槽的徑向外側並圍繞該內部凹槽延伸，且該外部凹槽連接至該複數個底孔，其中由該內部凹槽和該外部凹槽之間的該阻隔板限定一分隔壁。
  2. 如請求項1所述之基板處理系統，其中該阻隔板包含一單板。
  3. 如請求項1所述之基板處理系統，其中可 從該分配板限定的該第一通道流體存取該阻隔板的該內部凹槽，且其中可從該分配板限定的該第二通道流體存取該外部凹槽。
  4. 如請求項1所述的基板處理系統，其中該阻隔板之特徵在於一第一表面與一第二表面，該第一表面鄰接該分配板，該第二表面與該第一表面相對，其中該第二表面鄰接該面板，且其中該內部凹槽與該外部凹槽被限定在該阻隔板的該第一表面中。
  5. 如請求項4所述之基板處理系統，其中該內部凹槽為一第一內部凹槽，其中該外部凹槽為一第一外部凹槽，其中該阻隔板進一步限定一第二內部凹槽於該板的該第二表面中，且其中該阻隔板進一步限定一第二外部凹槽於該板的該第二表面中。
  6. 如請求項5所述之基板處理系統，其中該分隔壁為一第一分隔壁，且其中該阻隔板進一步於該第二內部凹槽與該第二外部凹槽之間限定一第二分隔壁。
  7. 如請求項1所述之基板處理系統，其中該阻隔板的該外部凹槽被該阻隔板限定在一徑向外側邊緣處。
  8. 一種基板處理系統，包含：一分配岐管，該分配岐管限定一第一岐管通道與一 第二岐管通道；一分配板，該分配板與該分配岐管耦接，其中該分配板限定一第一通道與一第二通道，該第二通道與該第一通道流體隔離，且該第二通道由該分配歧管的一底表面與形成於該分配板的一頂表面的一頂部溝槽的組合所形成，並且該頂部溝槽連接至複數個底孔；一面板，該面板限定通孔；一噴淋頭，該噴淋頭平行於該面板；一電漿區域，該電漿區域被設置在該面板與該噴淋頭之間；以及一阻隔板，該阻隔板定位在該分配板和該面板之間，其中該阻隔板之特徵在於一第一表面與一第二表面，該第一表面鄰接該分配板，該第二表面與該第一表面相對，其中該阻隔板限定該阻隔板的該第一表面內的一內部凹槽和該阻隔板的該第一表面內的一外部凹槽，該外部凹槽在該內部凹槽的徑向外側並圍繞該內部凹槽延伸，且該外部凹槽連接至該複數個底孔，其中由該內部凹槽和該外部凹槽之間的該阻隔板限定一分隔壁。
  9. 如請求項8所述之基板處理系統，其中該阻隔板在該阻隔板的一徑向外側邊緣處與該分配板和該面板耦接。
  10. 一種基板處理方法，該方法包含以下步驟：在一陽極與一陰極之間施加一RF功率，其中該陽極與該陰極為平面且平行，並在該陽極與該陰極之間設置一電漿區域，且其中該陽極與該陰極之每一者與該電漿區域接界，其中該陽極為一噴淋頭或一面板的其中一者且該陰極為另一者，且其中一基板處理區域被設置在該噴淋頭與該電漿區域相對的一側上；藉由使一含氫前驅物通過一分配歧管、一分配板及一阻隔板流入該電漿區域的一中心，而形成一含氫電漿，其中該阻隔板在該含氫前驅物的流動中定位在該面板的上游並與之接觸，限定該阻隔板內的一內部凹槽和該阻隔板內的一外部凹槽，該外部凹槽在該內部凹槽的徑向外側並圍繞該內部凹槽延伸，其中由該內部凹槽和該外部凹槽之間的該阻隔板限定一分隔壁；藉由進一步使一含氟前驅物通過該分配歧管、該分配板及該阻隔板流入該電漿區域，而形成一含氫氟電漿，其中該含氫前驅物與該含氟前驅物在該電漿區域中結合，且該分配歧管的一底表面與形成於該分配板的一頂表面的一頂部溝槽的組合形成該含氟前驅物流動通過的一氣體通道，該頂部溝槽連接至複數個底孔，且該複數個底孔連接至該外部凹槽；以及 藉由使該含氫前驅物停止流入該電漿區域，而形成一含氟電漿。
  11. 如請求項10所述之處理方法，其中該處理方法處理一基板或一基板處理腔室的內部表面。
  12. 如請求項10所述之處理方法，其中該陽極、該陰極與該電漿區域為圓形。
  13. 如請求項10所述之處理方法，其中該含氫前驅物為氫(H2)和氨(NH3)中的一種，且該含氟前驅物為三氟化氮(NF3)。
TW110104427A 2017-12-19 2018-12-11 多區域氣體分配系統及方法 TWI836183B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/847,411 2017-12-19
US15/847,411 US10903054B2 (en) 2017-12-19 2017-12-19 Multi-zone gas distribution systems and methods

Publications (2)

Publication Number Publication Date
TW202131431A TW202131431A (zh) 2021-08-16
TWI836183B true TWI836183B (zh) 2024-03-21

Family

ID=66816220

Family Applications (2)

Application Number Title Priority Date Filing Date
TW107144496A TWI721342B (zh) 2017-12-19 2018-12-11 多區域氣體分配系統及方法
TW110104427A TWI836183B (zh) 2017-12-19 2018-12-11 多區域氣體分配系統及方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW107144496A TWI721342B (zh) 2017-12-19 2018-12-11 多區域氣體分配系統及方法

Country Status (6)

Country Link
US (3) US10903054B2 (zh)
JP (3) JP7048744B2 (zh)
KR (4) KR20220025940A (zh)
CN (1) CN111492469B (zh)
TW (2) TWI721342B (zh)
WO (1) WO2019126198A1 (zh)

Families Citing this family (204)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
JP7206265B2 (ja) 2017-11-27 2023-01-17 エーエスエム アイピー ホールディング ビー．ブイ． クリーン・ミニエンバイロメントを備える装置
CN111316417B (zh) 2017-11-27 2023-12-22 阿斯莫Ip控股公司 与批式炉偕同使用的用于储存晶圆匣的储存装置
US10903054B2 (en) * 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
CN116732497A (zh) 2018-02-14 2023-09-12 Asm Ip私人控股有限公司 通过循环沉积工艺在衬底上沉积含钌膜的方法
KR102636427B1 (ko) * 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
TW202405221A (zh) 2018-06-27 2024-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法
JP2021529254A (ja) 2018-06-27 2021-10-28 エーエスエム・アイピー・ホールディング・ベー・フェー 金属含有材料ならびに金属含有材料を含む膜および構造体を形成するための周期的堆積方法
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102707956B1 (ko) 2018-09-11 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
CN110970344B (zh) 2018-10-01 2024-10-25 Asmip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (ja) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
TW202405220A (zh) 2019-01-17 2024-02-01 荷蘭商Ａｓｍ Ｉｐ 私人控股有限公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
JP6905149B2 (ja) * 2019-02-14 2021-07-21 株式会社日立ハイテク 半導体製造装置
TW202044325A (zh) 2019-02-20 2020-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備
TWI845607B (zh) 2019-02-20 2024-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
TWI842826B (zh) 2019-02-22 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備及處理基材之方法
KR20200108248A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOCN 층을 포함한 구조체 및 이의 형성 방법
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
JP2020167398A (ja) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー ドアオープナーおよびドアオープナーが提供される基材処理装置
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
KR20200141003A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 가스 감지기를 포함하는 기상 반응기 시스템
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
KR20210010817A (ko) 2019-07-19 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법
CN112309843A (zh) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
CN112323048B (zh) 2019-08-05 2024-02-09 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
KR102505474B1 (ko) 2019-08-16 2023-03-03 램 리써치 코포레이션 웨이퍼 내에서 차동 보우를 보상하기 위한 공간적으로 튜닝 가능한 증착
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
TWI846953B (zh) 2019-10-08 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理裝置
KR20210042810A (ko) 2019-10-08 2021-04-20 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
KR20210043460A (ko) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
US11450529B2 (en) 2019-11-26 2022-09-20 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP7527928B2 (ja) 2019-12-02 2024-08-05 エーエスエム・アイピー・ホールディング・ベー・フェー 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210078405A (ko) 2019-12-17 2021-06-28 에이에스엠 아이피 홀딩 비.브이. 바나듐 나이트라이드 층을 형성하는 방법 및 바나듐 나이트라이드 층을 포함하는 구조
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
JP2021111783A (ja) 2020-01-06 2021-08-02 エーエスエム・アイピー・ホールディング・ベー・フェー チャネル付きリフトピン
JP2021109175A (ja) 2020-01-06 2021-08-02 エーエスエム・アイピー・ホールディング・ベー・フェー ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR20210093163A (ko) 2020-01-16 2021-07-27 에이에스엠 아이피 홀딩 비.브이. 고 종횡비 피처를 형성하는 방법
KR102675856B1 (ko) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
TW202146882A (zh) 2020-02-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
TW202203344A (zh) 2020-02-28 2022-01-16 荷蘭商Ａｓｍ Ｉｐ控股公司 專用於零件清潔的系統
KR20210116249A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
KR20210117157A (ko) 2020-03-12 2021-09-28 에이에스엠 아이피 홀딩 비.브이. 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
KR20210127620A (ko) 2020-04-13 2021-10-22 에이에스엠 아이피 홀딩 비.브이. 질소 함유 탄소 막을 형성하는 방법 및 이를 수행하기 위한 시스템
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
KR20210128343A (ko) 2020-04-15 2021-10-26 에이에스엠 아이피 홀딩 비.브이. 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
KR20210132605A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리
JP2021172884A (ja) 2020-04-24 2021-11-01 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化バナジウム含有層を形成する方法および窒化バナジウム含有層を含む構造体
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
TW202147543A (zh) 2020-05-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體處理系統
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
TW202146699A (zh) 2020-05-15 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統
TW202147383A (zh) 2020-05-19 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備
CN113707524B (zh) * 2020-05-20 2022-06-10 江苏鲁汶仪器有限公司 一种阻挡等离子体反流的进气结构
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
TW202200837A (zh) 2020-05-22 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基材上形成薄膜之反應系統
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202212620A (zh) 2020-06-02 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 處理基板之設備、形成膜之方法、及控制用於處理基板之設備之方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202202649A (zh) 2020-07-08 2022-01-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202219628A (zh) 2020-07-17 2022-05-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於光微影之結構與方法
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
TW202229601A (zh) 2020-08-27 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成圖案化結構的方法、操控機械特性的方法、裝置結構、及基板處理系統
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
KR20220045900A (ko) 2020-10-06 2022-04-13 에이에스엠 아이피 홀딩 비.브이. 실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치
CN114293174A (zh) 2020-10-07 2022-04-08 Asm Ip私人控股有限公司 气体供应单元和包括气体供应单元的衬底处理设备
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
US11694908B2 (en) * 2020-10-22 2023-07-04 Applied Materials, Inc. Gasbox for semiconductor processing chamber
TW202217037A (zh) 2020-10-22 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 沉積釩金屬的方法、結構、裝置及沉積總成
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202235649A (zh) 2020-11-24 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充間隙之方法與相關之系統及裝置
KR20220076343A (ko) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
TW202226899A (zh) 2020-12-22 2022-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 具匹配器的電漿處理裝置
TW202242184A (zh) 2020-12-22 2022-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 前驅物膠囊、前驅物容器、氣相沉積總成、及將固態前驅物裝載至前驅物容器中之方法
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD980814S1 (en) * 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980813S1 (en) * 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
KR102664983B1 (ko) * 2021-09-27 2024-05-10 주식회사 유진테크 샤워헤드 및 기판처리장치
JP2023127762A (ja) * 2022-03-02 2023-09-14 キオクシア株式会社 プラズマ処理装置
WO2023220302A1 (en) * 2022-05-13 2023-11-16 Lam Research Corporation Multi-zone gas distribution for asymmetric wafer bow compensation
CN115206841B (zh) * 2022-07-04 2023-10-20 北京中科科美科技股份有限公司 一种分区控压喷淋头
USD1037778S1 (en) * 2022-07-19 2024-08-06 Applied Materials, Inc. Gas distribution plate
CN115287630B (zh) * 2022-08-04 2024-03-26 长鑫存储技术有限公司 一种半导体器件制备装置及制备方法
CN116246952A (zh) * 2023-05-08 2023-06-09 粤芯半导体技术股份有限公司 晶圆刻蚀的控制方法、装置、计算机设备和存储介质
CN117059532B (zh) * 2023-10-11 2023-12-26 江苏邑文微电子科技有限公司 一种刻蚀设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070045513A (ko) * 2005-10-27 2007-05-02 주식회사 래디언테크 배플 및 이를 구비한 플라즈마 처리 장치
JP2008227064A (ja) * 2007-03-12 2008-09-25 Tokyo Electron Ltd 基板処理装置及び電極構造体
TW201243941A (en) * 2011-03-14 2012-11-01 Applied Materials Inc Methods for etch of metal and metal-oxide films
KR20150115780A (ko) * 2013-02-08 2015-10-14 어플라이드 머티어리얼스, 인코포레이티드 다수의 플라즈마 구성들을 갖는 반도체 프로세싱 시스템들
TW201742109A (zh) * 2016-05-20 2017-12-01 應用材料股份有限公司 用於半導體處理的氣體分配噴頭

Family Cites Families (2004)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2369620A (en) 1941-03-07 1945-02-13 Battelle Development Corp Method of coating cupreous metal with tin
US3451840A (en) 1965-10-06 1969-06-24 Us Air Force Wire coated with boron nitride and boron
US3401302A (en) 1965-11-01 1968-09-10 Humphreys Corp Induction plasma generator including cooling means, gas flow means, and operating means therefor
US3537474A (en) 1968-02-19 1970-11-03 Varian Associates Push button vacuum control valve and vacuum system using same
US3756511A (en) 1971-02-02 1973-09-04 Kogyo Kaihatsu Kenyusho Nozzle and torch for plasma jet
US3969077A (en) 1971-12-16 1976-07-13 Varian Associates Alkali metal leak detection method and apparatus
US4632857A (en) 1974-05-24 1986-12-30 Richardson Chemical Company Electrolessly plated product having a polymetallic catalytic film underlayer
US4397812A (en) 1974-05-24 1983-08-09 Richardson Chemical Company Electroless nickel polyalloys
US4232060A (en) 1979-01-22 1980-11-04 Richardson Chemical Company Method of preparing substrate surface for electroless plating and products produced thereby
US4006047A (en) 1974-07-22 1977-02-01 Amp Incorporated Catalysts for electroless deposition of metals on comparatively low-temperature polyolefin and polyester substrates
US3937857A (en) 1974-07-22 1976-02-10 Amp Incorporated Catalyst for electroless deposition of metals
US4341592A (en) 1975-08-04 1982-07-27 Texas Instruments Incorporated Method for removing photoresist layer from substrate by ozone treatment
US4190488A (en) 1978-08-21 1980-02-26 International Business Machines Corporation Etching method using noble gas halides
US4265943A (en) 1978-11-27 1981-05-05 Macdermid Incorporated Method and composition for continuous electroless copper deposition using a hypophosphite reducing agent in the presence of cobalt or nickel ions
US4234628A (en) 1978-11-28 1980-11-18 The Harshaw Chemical Company Two-step preplate system for polymeric surfaces
US4214946A (en) 1979-02-21 1980-07-29 International Business Machines Corporation Selective reactive ion etching of polysilicon against SiO2 utilizing SF6 -Cl2 -inert gas etchant
US4361441A (en) 1979-04-17 1982-11-30 Plasma Holdings N.V. Treatment of matter in low temperature plasmas
US4209357A (en) 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus
IT1130955B (it) 1980-03-11 1986-06-18 Oronzio De Nora Impianti Procedimento per la formazione di elettroci sulle superficie di membrane semipermeabili e sistemi elettrodo-membrana cosi' prodotti
US4361418A (en) 1980-05-06 1982-11-30 Risdon Corporation High vacuum processing system having improved recycle draw-down capability under high humidity ambient atmospheric conditions
NL8004005A (nl) 1980-07-11 1982-02-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US4340462A (en) 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
US4368223A (en) 1981-06-01 1983-01-11 Asahi Glass Company, Ltd. Process for preparing nickel layer
DE3205345A1 (de) 1982-02-15 1983-09-01 Philips Patentverwaltung Gmbh, 2000 Hamburg "verfahren zur herstellung von fluordotierten lichtleitfasern"
US4585920A (en) 1982-05-21 1986-04-29 Tegal Corporation Plasma reactor removable insert
JPS591671A (ja) 1982-05-28 1984-01-07 Fujitsu Ltd プラズマｃｖｄ装置
JPS59126778A (ja) 1983-01-11 1984-07-21 Tokyo Denshi Kagaku Kabushiki プラズマエツチング方法及びその装置
JPS59222922A (ja) 1983-06-01 1984-12-14 Nippon Telegr & Teleph Corp <Ntt> 気相成長装置
JPS6060060A (ja) 1983-09-12 1985-04-06 株式会社日立製作所 鉄道車両の扉開閉装置
US4579618A (en) 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
US4656052A (en) 1984-02-13 1987-04-07 Kyocera Corporation Process for production of high-hardness boron nitride film
US4656076A (en) 1985-04-26 1987-04-07 Triquint Semiconductors, Inc. Self-aligned recessed gate process
US4600464A (en) 1985-05-01 1986-07-15 International Business Machines Corporation Plasma etching reactor with reduced plasma potential
US4807016A (en) 1985-07-15 1989-02-21 Texas Instruments Incorporated Dry etch of phosphosilicate glass with selectivity to undoped oxide
US4610775A (en) 1985-07-26 1986-09-09 Westinghouse Electric Corp. Method and apparatus for clearing short-circuited, high-voltage cathodes in a sputtering chamber
JPS6245119A (ja) 1985-08-23 1987-02-27 Matsushita Electric Ind Co Ltd ドライエツチング装置
US4749440A (en) 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
US4668335A (en) 1985-08-30 1987-05-26 Advanced Micro Devices, Inc. Anti-corrosion treatment for patterning of metallic layers
US4690746A (en) 1986-02-24 1987-09-01 Genus, Inc. Interlayer dielectric process
US4715937A (en) 1986-05-05 1987-12-29 The Board Of Trustees Of The Leland Stanford Junior University Low-temperature direct nitridation of silicon in nitrogen plasma generated by microwave discharge
US5228501A (en) 1986-12-19 1993-07-20 Applied Materials, Inc. Physical vapor deposition clamping mechanism and heater/cooler
US4951601A (en) 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
US4960488A (en) 1986-12-19 1990-10-02 Applied Materials, Inc. Reactor chamber self-cleaning process
US5000113A (en) 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
JPS63204726A (ja) 1987-02-20 1988-08-24 Anelva Corp 真空処理装置
US5322976A (en) 1987-02-24 1994-06-21 Polyonics Corporation Process for forming polyimide-metal laminates
KR910006164B1 (ko) 1987-03-18 1991-08-16 가부시키가이샤 도시바 박막형성방법과 그 장치
US4793897A (en) 1987-03-20 1988-12-27 Applied Materials, Inc. Selective thin film etch process
US4786360A (en) 1987-03-30 1988-11-22 International Business Machines Corporation Anisotropic etch process for tungsten metallurgy
US5198034A (en) 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
DE3884653T2 (de) 1987-04-03 1994-02-03 Fujitsu Ltd Verfahren und Vorrichtung zur Gasphasenabscheidung von Diamant.
US4913929A (en) 1987-04-21 1990-04-03 The Board Of Trustees Of The Leland Stanford Junior University Thermal/microwave remote plasma multiprocessing reactor and method of use
JP2598019B2 (ja) 1987-06-01 1997-04-09 富士通株式会社 感光体の製造方法
US4753898A (en) 1987-07-09 1988-06-28 Motorola, Inc. LDD CMOS process
US4857140A (en) 1987-07-16 1989-08-15 Texas Instruments Incorporated Method for etching silicon nitride
US4867841A (en) 1987-07-16 1989-09-19 Texas Instruments Incorporated Method for etch of polysilicon film
US4904621A (en) 1987-07-16 1990-02-27 Texas Instruments Incorporated Remote plasma generation process using a two-stage showerhead
US4820377A (en) 1987-07-16 1989-04-11 Texas Instruments Incorporated Method for cleanup processing chamber and vacuum process module
US4828649A (en) 1987-07-16 1989-05-09 Texas Instruments Incorporated Method for etching an aluminum film doped with silicon
JPS6432627A (en) 1987-07-29 1989-02-02 Hitachi Ltd Low-temperature dry etching method
US4919750A (en) 1987-09-14 1990-04-24 International Business Machines Corporation Etching metal films with complexing chloride plasma
US4810520A (en) 1987-09-23 1989-03-07 Magnetic Peripherals Inc. Method for controlling electroless magnetic plating
US5180435A (en) 1987-09-24 1993-01-19 Research Triangle Institute, Inc. Remote plasma enhanced CVD method and apparatus for growing an epitaxial semiconductor layer
KR930003136B1 (ko) 1987-10-14 1993-04-22 후루가와덴기 고오교오 가부시기가이샤 프라즈마 cvd에 의한 박막 형성장치
US4981551A (en) 1987-11-03 1991-01-01 North Carolina State University Dry etching of silicon carbide
US4792378A (en) 1987-12-15 1988-12-20 Texas Instruments Incorporated Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor
JP2804037B2 (ja) 1988-02-05 1998-09-24 株式会社東芝 ドライエッチング方法
JPH01297141A (ja) 1988-05-25 1989-11-30 Canon Inc マイクロ波プラズマ処理装置
US4900856A (en) 1988-05-26 1990-02-13 Ethyl Corporation Preparation of metal halide-amine complexes
JPH029115A (ja) 1988-06-28 1990-01-12 Mitsubishi Electric Corp 半導体製造装置
JPH02114525A (ja) 1988-10-24 1990-04-26 Toshiba Corp 有機化合物膜の除去方法及び除去装置
JPH02114530A (ja) 1988-10-25 1990-04-26 Mitsubishi Electric Corp 薄膜形成装置
KR930004115B1 (ko) 1988-10-31 1993-05-20 후지쓰 가부시끼가이샤 애싱(ashing)처리방법 및 장치
US5030319A (en) 1988-12-27 1991-07-09 Kabushiki Kaisha Toshiba Method of oxide etching with condensed plasma reaction product
US4985372A (en) 1989-02-17 1991-01-15 Tokyo Electron Limited Method of forming conductive layer including removal of native oxide
JP2823276B2 (ja) 1989-03-18 1998-11-11 株式会社東芝 Ｘ線マスクの製造方法および薄膜の内部応力制御装置
US4946903A (en) 1989-03-27 1990-08-07 The Research Foundation Of State University Of Ny Oxyfluoropolymers having chemically reactive surface functionality and increased surface energies
US5186718A (en) 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
US4987856A (en) 1989-05-22 1991-01-29 Advanced Semiconductor Materials America, Inc. High throughput multi station processor for multiple single wafers
US5061838A (en) 1989-06-23 1991-10-29 Massachusetts Institute Of Technology Toroidal electron cyclotron resonance reactor
US5270125A (en) 1989-07-11 1993-12-14 Redwood Microsystems, Inc. Boron nutride membrane in wafer structure
US4993358A (en) 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
US5013691A (en) 1989-07-31 1991-05-07 At&T Bell Laboratories Anisotropic deposition of silicon dioxide
US5028565A (en) 1989-08-25 1991-07-02 Applied Materials, Inc. Process for CVD deposition of tungsten layer on semiconductor wafer
US4994404A (en) 1989-08-28 1991-02-19 Motorola, Inc. Method for forming a lightly-doped drain (LDD) structure in a semiconductor device
US6068784A (en) * 1989-10-03 2000-05-30 Applied Materials, Inc. Process used in an RF coupled plasma reactor
US4980018A (en) 1989-11-14 1990-12-25 Intel Corporation Plasma etching process for refractory metal vias
DE69111493T2 (de) 1990-03-12 1996-03-21 Ngk Insulators Ltd Wafer-Heizgeräte für Apparate, zur Halbleiterherstellung Heizanlage mit diesen Heizgeräten und Herstellung von Heizgeräten.
JP2960466B2 (ja) 1990-03-19 1999-10-06 株式会社日立製作所 半導体デバイスの配線絶縁膜の形成方法及びその装置
US5089441A (en) 1990-04-16 1992-02-18 Texas Instruments Incorporated Low-temperature in-situ dry cleaning process for semiconductor wafers
US5328810A (en) 1990-05-07 1994-07-12 Micron Technology, Inc. Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process
US5147692A (en) 1990-05-08 1992-09-15 Macdermid, Incorporated Electroless plating of nickel onto surfaces such as copper or fused tungston
US5069938A (en) 1990-06-07 1991-12-03 Applied Materials, Inc. Method of forming a corrosion-resistant protective coating on aluminum substrate
US5238499A (en) 1990-07-16 1993-08-24 Novellus Systems, Inc. Gas-based substrate protection during processing
US5083030A (en) 1990-07-18 1992-01-21 Applied Photonics Research Double-sided radiation-assisted processing apparatus
US5235139A (en) 1990-09-12 1993-08-10 Macdermid, Incorprated Method for fabricating printed circuits
US5074456A (en) 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
US5089442A (en) 1990-09-20 1992-02-18 At&T Bell Laboratories Silicon dioxide deposition method using a magnetic field and both sputter deposition and plasma-enhanced cvd
KR930011413B1 (ko) 1990-09-25 1993-12-06 가부시키가이샤 한도오따이 에네루기 겐큐쇼 펄스형 전자파를 사용한 플라즈마 cvd 법
EP0478233B1 (en) 1990-09-27 1996-01-03 AT&T Corp. Process for fabricating integrated circuits
JPH04142738A (ja) 1990-10-04 1992-05-15 Sony Corp ドライエッチング方法
JPH04355917A (ja) 1990-10-12 1992-12-09 Seiko Epson Corp 半導体装置の製造装置
US5549780A (en) 1990-10-23 1996-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for plasma processing and apparatus for plasma processing
JPH0817171B2 (ja) 1990-12-31 1996-02-21 株式会社半導体エネルギー研究所 プラズマ発生装置およびそれを用いたエッチング方法
JP2640174B2 (ja) 1990-10-30 1997-08-13 三菱電機株式会社 半導体装置およびその製造方法
JP3206916B2 (ja) 1990-11-28 2001-09-10 住友電気工業株式会社 欠陥濃度低減方法、紫外線透過用光学ガラスの製造方法及び紫外線透過用光学ガラス
US5279705A (en) 1990-11-28 1994-01-18 Dainippon Screen Mfg. Co., Ltd. Gaseous process for selectively removing silicon nitride film
US5217559A (en) 1990-12-10 1993-06-08 Texas Instruments Incorporated Apparatus and method for in-situ deep ultraviolet photon-assisted semiconductor wafer processing
US5578130A (en) 1990-12-12 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Apparatus and method for depositing a film
WO1992012535A1 (en) 1991-01-08 1992-07-23 Fujitsu Limited Process for forming silicon oxide film
JP2697315B2 (ja) 1991-01-23 1998-01-14 日本電気株式会社 フッ素含有シリコン酸化膜の形成方法
JP2787142B2 (ja) 1991-03-01 1998-08-13 上村工業 株式会社 無電解錫、鉛又はそれらの合金めっき方法
DE4107006A1 (de) 1991-03-05 1992-09-10 Siemens Ag Verfahren zum anisotropen trockenaetzen von aluminium bzw. aluminiumlegierungen enthaltenden leiterbahnebenen in integrierten halbleiterschaltungen
US5897751A (en) 1991-03-11 1999-04-27 Regents Of The University Of California Method of fabricating boron containing coatings
US5330578A (en) 1991-03-12 1994-07-19 Semiconductor Energy Laboratory Co., Ltd. Plasma treatment apparatus
US5290383A (en) 1991-03-24 1994-03-01 Tokyo Electron Limited Plasma-process system with improved end-point detecting scheme
JPH05508266A (ja) 1991-04-03 1993-11-18 イーストマン・コダック・カンパニー ＧａＡｓをドライエッチングするための高耐久性マスク
EP0511448A1 (en) 1991-04-30 1992-11-04 International Business Machines Corporation Method and apparatus for in-situ and on-line monitoring of a trench formation process
JPH04341568A (ja) 1991-05-16 1992-11-27 Toshiba Corp 薄膜形成方法及び薄膜形成装置
JP2699695B2 (ja) 1991-06-07 1998-01-19 日本電気株式会社 化学気相成長法
US5203911A (en) 1991-06-24 1993-04-20 Shipley Company Inc. Controlled electroless plating
US6077384A (en) 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US6074512A (en) 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US5279865A (en) 1991-06-28 1994-01-18 Digital Equipment Corporation High throughput interlevel dielectric gap filling process
JPH0521393A (ja) 1991-07-11 1993-01-29 Sony Corp プラズマ処理装置
JPH0562936A (ja) 1991-09-03 1993-03-12 Mitsubishi Electric Corp プラズマ処理装置およびプラズマクリーニング方法
US5240497A (en) 1991-10-08 1993-08-31 Cornell Research Foundation, Inc. Alkaline free electroless deposition
US5318668A (en) 1991-10-24 1994-06-07 Matsushita Electric Industrial Co., Ltd. Dry etching method
JPH05226480A (ja) 1991-12-04 1993-09-03 Nec Corp 半導体装置の製造方法
US5290382A (en) 1991-12-13 1994-03-01 Hughes Aircraft Company Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films
US5279669A (en) 1991-12-13 1994-01-18 International Business Machines Corporation Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions
US5352636A (en) 1992-01-16 1994-10-04 Applied Materials, Inc. In situ method for cleaning silicon surface and forming layer thereon in same chamber
US5300463A (en) 1992-03-06 1994-04-05 Micron Technology, Inc. Method of selectively etching silicon dioxide dielectric layers on semiconductor wafers
JP3084497B2 (ja) 1992-03-25 2000-09-04 東京エレクトロン株式会社 ＳｉＯ２膜のエッチング方法
JP2773530B2 (ja) 1992-04-15 1998-07-09 日本電気株式会社 半導体装置の製造方法
JP2792335B2 (ja) 1992-05-27 1998-09-03 日本電気株式会社 半導体装置の製造方法
US5274917A (en) 1992-06-08 1994-01-04 The Whitaker Corporation Method of making connector with monolithic multi-contact array
US5880036A (en) 1992-06-15 1999-03-09 Micron Technology, Inc. Method for enhancing oxide to nitride selectivity through the use of independent heat control
EP0647163B1 (en) 1992-06-22 1998-09-09 Lam Research Corporation A plasma cleaning method for removing residues in a plasma treatment chamber
US5252178A (en) 1992-06-24 1993-10-12 Texas Instruments Incorporated Multi-zone plasma processing method and apparatus
US5534072A (en) 1992-06-24 1996-07-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing subtrates
US5286297A (en) 1992-06-24 1994-02-15 Texas Instruments Incorporated Multi-electrode plasma processing apparatus
JP3688726B2 (ja) 1992-07-17 2005-08-31 株式会社東芝 半導体装置の製造方法
US5380560A (en) 1992-07-28 1995-01-10 International Business Machines Corporation Palladium sulfate solution for the selective seeding of the metal interconnections on polyimide dielectrics for electroless metal deposition
US5248371A (en) 1992-08-13 1993-09-28 General Signal Corporation Hollow-anode glow discharge apparatus
US5292370A (en) 1992-08-14 1994-03-08 Martin Marietta Energy Systems, Inc. Coupled microwave ECR and radio-frequency plasma source for plasma processing
US5271972A (en) 1992-08-17 1993-12-21 Applied Materials, Inc. Method for depositing ozone/TEOS silicon oxide films of reduced surface sensitivity
US5326427A (en) 1992-09-11 1994-07-05 Lsi Logic Corporation Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation
US5306530A (en) 1992-11-23 1994-04-26 Associated Universities, Inc. Method for producing high quality thin layer films on substrates
JP2809018B2 (ja) 1992-11-26 1998-10-08 日本電気株式会社 半導体装置およびその製造方法
US5382311A (en) 1992-12-17 1995-01-17 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
US5500249A (en) 1992-12-22 1996-03-19 Applied Materials, Inc. Uniform tungsten silicide films produced by chemical vapor deposition
US5756402A (en) 1992-12-28 1998-05-26 Kabushiki Kaisha Toshiba Method of etching silicon nitride film
US5453124A (en) 1992-12-30 1995-09-26 Texas Instruments Incorporated Programmable multizone gas injector for single-wafer semiconductor processing equipment
US5624582A (en) 1993-01-21 1997-04-29 Vlsi Technology, Inc. Optimization of dry etching through the control of helium backside pressure
US5366585A (en) 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
US5345999A (en) 1993-03-17 1994-09-13 Applied Materials, Inc. Method and apparatus for cooling semiconductor wafers
US5302233A (en) 1993-03-19 1994-04-12 Micron Semiconductor, Inc. Method for shaping features of a semiconductor structure using chemical mechanical planarization (CMP)
JP3236111B2 (ja) 1993-03-31 2001-12-10 キヤノン株式会社 プラズマ処理装置及び処理方法
US5695568A (en) 1993-04-05 1997-12-09 Applied Materials, Inc. Chemical vapor deposition chamber
KR0142150B1 (ko) 1993-04-09 1998-07-15 윌리엄 티. 엘리스 붕소 질화물을 에칭하기 위한 방법
US5416048A (en) 1993-04-16 1995-05-16 Micron Semiconductor, Inc. Method to slope conductor profile prior to dielectric deposition to improve dielectric step-coverage
DE69432383D1 (de) 1993-05-27 2003-05-08 Applied Materials Inc Verbesserungen betreffend Substrathalter geeignet für den Gebrauch in Vorrichtungen für die chemische Abscheidung aus der Dampfphase
US5591269A (en) 1993-06-24 1997-01-07 Tokyo Electron Limited Vacuum processing apparatus
US5292682A (en) 1993-07-06 1994-03-08 Eastman Kodak Company Method of making two-phase charge coupled device
US5413670A (en) 1993-07-08 1995-05-09 Air Products And Chemicals, Inc. Method for plasma etching or cleaning with diluted NF3
US5560779A (en) 1993-07-12 1996-10-01 Olin Corporation Apparatus for synthesizing diamond films utilizing an arc plasma
WO1995002900A1 (en) 1993-07-15 1995-01-26 Astarix, Inc. Aluminum-palladium alloy for initiation of electroless plating
EP0637063B1 (en) 1993-07-30 1999-11-03 Applied Materials, Inc. Method for depositing silicon nitride on silicium surfaces
US5483920A (en) 1993-08-05 1996-01-16 Board Of Governors Of Wayne State University Method of forming cubic boron nitride films
US5685946A (en) 1993-08-11 1997-11-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices
US5468597A (en) 1993-08-25 1995-11-21 Shipley Company, L.L.C. Selective metallization process
US5865896A (en) 1993-08-27 1999-02-02 Applied Materials, Inc. High density plasma CVD reactor with combined inductive and capacitive coupling
US5614055A (en) 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5384284A (en) 1993-10-01 1995-01-24 Micron Semiconductor, Inc. Method to form a low resistant bond pad interconnect
SE501888C2 (sv) 1993-10-18 1995-06-12 Ladislav Bardos En metod och en apparat för generering av en urladdning i egna ångor från en radiofrekvenselektrod för kontinuerlig självförstoftning av elektroden
US5505816A (en) 1993-12-16 1996-04-09 International Business Machines Corporation Etching of silicon dioxide selectively to silicon nitride and polysilicon
US5415890A (en) 1994-01-03 1995-05-16 Eaton Corporation Modular apparatus and method for surface treatment of parts with liquid baths
US5403434A (en) 1994-01-06 1995-04-04 Texas Instruments Incorporated Low-temperature in-situ dry cleaning process for semiconductor wafer
JP3188363B2 (ja) 1994-01-21 2001-07-16 エフエスアイ・インターナショナル・インコーポレーテッド 循環クーラントを用いた温度コントローラ及びそのための温度制御方法
US5399237A (en) 1994-01-27 1995-03-21 Applied Materials, Inc. Etching titanium nitride using carbon-fluoride and carbon-oxide gas
US5451259A (en) 1994-02-17 1995-09-19 Krogh; Ole D. ECR plasma source for remote processing
US5454170A (en) 1994-03-02 1995-10-03 Vlsi Technology Inc. Robot to pedestal alignment head
US5439553A (en) 1994-03-30 1995-08-08 Penn State Research Foundation Controlled etching of oxides via gas phase reactions
DE69531880T2 (de) 1994-04-28 2004-09-09 Applied Materials, Inc., Santa Clara Verfahren zum Betreiben eines CVD-Reaktors hoher Plasma-Dichte mit kombinierter induktiver und kapazitiver Einkopplung
US5468342A (en) 1994-04-28 1995-11-21 Cypress Semiconductor Corp. Method of etching an oxide layer
US6110838A (en) 1994-04-29 2000-08-29 Texas Instruments Incorporated Isotropic polysilicon plus nitride stripping
US5531835A (en) 1994-05-18 1996-07-02 Applied Materials, Inc. Patterned susceptor to reduce electrostatic force in a CVD chamber
US5628829A (en) 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
US5665640A (en) 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5580421A (en) 1994-06-14 1996-12-03 Fsi International Apparatus for surface conditioning
US5767373A (en) 1994-06-16 1998-06-16 Novartis Finance Corporation Manipulation of protoporphyrinogen oxidase enzyme activity in eukaryotic organisms
US5580385A (en) 1994-06-30 1996-12-03 Texas Instruments, Incorporated Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber
JP3501524B2 (ja) 1994-07-01 2004-03-02 東京エレクトロン株式会社 処理装置の真空排気システム
JP3411678B2 (ja) 1994-07-08 2003-06-03 東京エレクトロン株式会社 処理装置
US5592358A (en) 1994-07-18 1997-01-07 Applied Materials, Inc. Electrostatic chuck for magnetic flux processing
US5563105A (en) 1994-09-30 1996-10-08 International Business Machines Corporation PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element
JPH08107101A (ja) 1994-10-03 1996-04-23 Fujitsu Ltd プラズマ処理装置及びプラズマ処理方法
US5597439A (en) 1994-10-26 1997-01-28 Applied Materials, Inc. Process gas inlet and distribution passages
TW344897B (en) 1994-11-30 1998-11-11 At&T Tcorporation A process for forming gate oxides possessing different thicknesses on a semiconductor substrate
US5558717A (en) 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
CN1053764C (zh) 1994-12-09 2000-06-21 中国科学院微电子中心 束致变蚀方法
ATE190678T1 (de) 1994-12-19 2000-04-15 Alcan Int Ltd Reinigung von aluminium werkstücken
US5792376A (en) 1995-01-06 1998-08-11 Kabushiki Kaisha Toshiba Plasma processing apparatus and plasma processing method
US5772770A (en) 1995-01-27 1998-06-30 Kokusai Electric Co, Ltd. Substrate processing apparatus
JPH08279495A (ja) 1995-02-07 1996-10-22 Seiko Epson Corp プラズマ処理装置及びその方法
US5571576A (en) 1995-02-10 1996-11-05 Watkins-Johnson Method of forming a fluorinated silicon oxide layer using plasma chemical vapor deposition
US5670066A (en) 1995-03-17 1997-09-23 Lam Research Corporation Vacuum plasma processing wherein workpiece position is detected prior to chuck being activated
US6039851A (en) 1995-03-22 2000-03-21 Micron Technology, Inc. Reactive sputter faceting of silicon dioxide to enhance gap fill of spaces between metal lines
US5556521A (en) 1995-03-24 1996-09-17 Sony Corporation Sputter etching apparatus with plasma source having a dielectric pocket and contoured plasma source
JPH08264510A (ja) 1995-03-27 1996-10-11 Toshiba Corp シリコン窒化膜のエッチング方法およびエッチング装置
US5571577A (en) 1995-04-07 1996-11-05 Board Of Trustees Operating Michigan State University Method and apparatus for plasma treatment of a surface
JP3270852B2 (ja) 1995-04-20 2002-04-02 東京エレクトロン株式会社 圧力調整装置及びこれを用いた部屋の連通方法
JP3360098B2 (ja) 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
TW323387B (zh) 1995-06-07 1997-12-21 Tokyo Electron Co Ltd
US20010028922A1 (en) 1995-06-07 2001-10-11 Sandhu Gurtej S. High throughput ILD fill process for high aspect ratio gap fill
JP3599204B2 (ja) 1995-06-08 2004-12-08 アネルバ株式会社 Ｃｖｄ装置
JP2814370B2 (ja) 1995-06-18 1998-10-22 東京エレクトロン株式会社 プラズマ処理装置
US5997962A (en) 1995-06-30 1999-12-07 Tokyo Electron Limited Plasma process utilizing an electrostatic chuck
US5968379A (en) 1995-07-14 1999-10-19 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability and related methods
US6022446A (en) 1995-08-21 2000-02-08 Shan; Hongching Shallow magnetic fields for generating circulating electrons to enhance plasma processing
US6197364B1 (en) 1995-08-22 2001-03-06 International Business Machines Corporation Production of electroless Co(P) with designed coercivity
US5755859A (en) 1995-08-24 1998-05-26 International Business Machines Corporation Cobalt-tin alloys and their applications for devices, chip interconnections and packaging
US6053982A (en) 1995-09-01 2000-04-25 Asm America, Inc. Wafer support system
US6228751B1 (en) 1995-09-08 2001-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US5719085A (en) 1995-09-29 1998-02-17 Intel Corporation Shallow trench isolation technique
US5716506A (en) 1995-10-06 1998-02-10 Board Of Trustees Of The University Of Illinois Electrochemical sensors for gas detection
JPH09106898A (ja) 1995-10-09 1997-04-22 Anelva Corp プラズマｃｖｄ装置、プラズマ処理装置及びプラズマｃｖｄ方法
US5635086A (en) 1995-10-10 1997-06-03 The Esab Group, Inc. Laser-plasma arc metal cutting apparatus
JPH09106899A (ja) 1995-10-11 1997-04-22 Anelva Corp プラズマｃｖｄ装置及び方法並びにドライエッチング装置及び方法
US5814238A (en) 1995-10-12 1998-09-29 Sandia Corporation Method for dry etching of transition metals
US5910340A (en) 1995-10-23 1999-06-08 C. Uyemura & Co., Ltd. Electroless nickel plating solution and method
US6015724A (en) 1995-11-02 2000-01-18 Semiconductor Energy Laboratory Co. Manufacturing method of a semiconductor device
US5599740A (en) 1995-11-16 1997-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Deposit-etch-deposit ozone/teos insulator layer method
US5648125A (en) 1995-11-16 1997-07-15 Cane; Frank N. Electroless plating process for the manufacture of printed circuit boards
US5846598A (en) 1995-11-30 1998-12-08 International Business Machines Corporation Electroless plating of metallic features on nonmetallic or semiconductor layer without extraneous plating
US5756400A (en) 1995-12-08 1998-05-26 Applied Materials, Inc. Method and apparatus for cleaning by-products from plasma chamber surfaces
US5733816A (en) 1995-12-13 1998-03-31 Micron Technology, Inc. Method for depositing a tungsten layer on silicon
US6261637B1 (en) 1995-12-15 2001-07-17 Enthone-Omi, Inc. Use of palladium immersion deposition to selectively initiate electroless plating on Ti and W alloys for wafer fabrication
US6065424A (en) 1995-12-19 2000-05-23 Cornell Research Foundation, Inc. Electroless deposition of metal films with spray processor
US5883012A (en) 1995-12-21 1999-03-16 Motorola, Inc. Method of etching a trench into a semiconductor substrate
US5679606A (en) 1995-12-27 1997-10-21 Taiwan Semiconductor Manufacturing Company, Ltd. method of forming inter-metal-dielectric structure
DE69623651T2 (de) 1995-12-27 2003-04-24 Lam Research Corp., Fremont Verfahren zur füllung von gräben auf einer halbleiterscheibe
DE69636880T2 (de) 1995-12-28 2007-11-15 Taiyo Nippon Sanso Corporation Verfahren und Anordnung zum Transport von Substratscheiben
US5674787A (en) 1996-01-16 1997-10-07 Sematech, Inc. Selective electroless copper deposited interconnect plugs for ULSI applications
US5891513A (en) 1996-01-16 1999-04-06 Cornell Research Foundation Electroless CU deposition on a barrier layer by CU contact displacement for ULSI applications
US5824599A (en) 1996-01-16 1998-10-20 Cornell Research Foundation, Inc. Protected encapsulation of catalytic layer for electroless copper interconnect
US6036878A (en) 1996-02-02 2000-03-14 Applied Materials, Inc. Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna
US5872052A (en) 1996-02-12 1999-02-16 Micron Technology, Inc. Planarization using plasma oxidized amorphous silicon
US5648175A (en) 1996-02-14 1997-07-15 Applied Materials, Inc. Chemical vapor deposition reactor system and integrated circuit
US6004884A (en) 1996-02-15 1999-12-21 Lam Research Corporation Methods and apparatus for etching semiconductor wafers
US6200412B1 (en) 1996-02-16 2001-03-13 Novellus Systems, Inc. Chemical vapor deposition system including dedicated cleaning gas injection
TW335517B (en) 1996-03-01 1998-07-01 Hitachi Ltd Apparatus and method for processing plasma
US5656093A (en) 1996-03-08 1997-08-12 Applied Materials, Inc. Wafer spacing mask for a substrate support chuck and method of fabricating same
JPH09260356A (ja) 1996-03-22 1997-10-03 Toshiba Corp ドライエッチング方法
US5951601A (en) 1996-03-25 1999-09-14 Lesinski; S. George Attaching an implantable hearing aid microactuator
US6065425A (en) 1996-03-25 2000-05-23 Canon Kabushiki Kaisha Plasma process apparatus and plasma process method
US5858876A (en) 1996-04-01 1999-01-12 Chartered Semiconductor Manufacturing, Ltd. Simultaneous deposit and etch method for forming a void-free and gap-filling insulator layer upon a patterned substrate layer
US5712185A (en) 1996-04-23 1998-01-27 United Microelectronics Method for forming shallow trench isolation
US5843847A (en) 1996-04-29 1998-12-01 Applied Materials, Inc. Method for etching dielectric layers with high selectivity and low microloading
US6176667B1 (en) 1996-04-30 2001-01-23 Applied Materials, Inc. Multideck wafer processing system
KR100230981B1 (ko) 1996-05-08 1999-11-15 김광호 반도체장치 제조공정의 플라즈마 식각 방법
US5660957A (en) 1996-05-16 1997-08-26 Fujitsu Limited Electron-beam treatment procedure for patterned mask layers
US6048798A (en) 1996-06-05 2000-04-11 Lam Research Corporation Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer
US5820723A (en) 1996-06-05 1998-10-13 Lam Research Corporation Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US5863376A (en) 1996-06-05 1999-01-26 Lam Research Corporation Temperature controlling method and apparatus for a plasma processing chamber
JPH1068094A (ja) 1996-06-13 1998-03-10 Samsung Electron Co Ltd 遷移金属薄膜用蝕刻ガス混合物およびこれを用いた遷移金属薄膜の蝕刻方法
US5846373A (en) 1996-06-28 1998-12-08 Lam Research Corporation Method for monitoring process endpoints in a plasma chamber and a process monitoring arrangement in a plasma chamber
US5885358A (en) 1996-07-09 1999-03-23 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
US5846883A (en) 1996-07-10 1998-12-08 Cvc, Inc. Method for multi-zone high-density inductively-coupled plasma generation
US5993916A (en) 1996-07-12 1999-11-30 Applied Materials, Inc. Method for substrate processing with improved throughput and yield
US5846332A (en) 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
US6170428B1 (en) 1996-07-15 2001-01-09 Applied Materials, Inc. Symmetric tunable inductively coupled HDP-CVD reactor
US5781693A (en) 1996-07-24 1998-07-14 Applied Materials, Inc. Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween
US5868897A (en) 1996-07-31 1999-02-09 Toyo Technologies, Inc. Device and method for processing a plasma to alter the surface of a substrate using neutrals
JPH1079372A (ja) 1996-09-03 1998-03-24 Matsushita Electric Ind Co Ltd プラズマ処理方法及びプラズマ処理装置
US5661093A (en) 1996-09-12 1997-08-26 Applied Materials, Inc. Method for the stabilization of halogen-doped films through the use of multiple sealing layers
US5888906A (en) 1996-09-16 1999-03-30 Micron Technology, Inc. Plasmaless dry contact cleaning method using interhalogen compounds
US5747373A (en) 1996-09-24 1998-05-05 Taiwan Semiconductor Manufacturing Company Ltd. Nitride-oxide sidewall spacer for salicide formation
US5846375A (en) 1996-09-26 1998-12-08 Micron Technology, Inc. Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment
US5835334A (en) 1996-09-30 1998-11-10 Lam Research Variable high temperature chuck for high density plasma chemical vapor deposition
US5904827A (en) 1996-10-15 1999-05-18 Reynolds Tech Fabricators, Inc. Plating cell with rotary wiper and megasonic transducer
US6308654B1 (en) 1996-10-18 2001-10-30 Applied Materials, Inc. Inductively coupled parallel-plate plasma reactor with a conical dome
US5951776A (en) 1996-10-25 1999-09-14 Applied Materials, Inc. Self aligning lift mechanism
KR100237825B1 (ko) 1996-11-05 2000-01-15 윤종용 반도체장치 제조설비의 페디스탈
US5804259A (en) 1996-11-07 1998-09-08 Applied Materials, Inc. Method and apparatus for depositing a multilayered low dielectric constant film
US6114216A (en) 1996-11-13 2000-09-05 Applied Materials, Inc. Methods for shallow trench isolation
US6019848A (en) 1996-11-13 2000-02-01 Applied Materials, Inc. Lid assembly for high temperature processing chamber
US5994209A (en) 1996-11-13 1999-11-30 Applied Materials, Inc. Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films
US5812403A (en) 1996-11-13 1998-09-22 Applied Materials, Inc. Methods and apparatus for cleaning surfaces in a substrate processing system
US5963840A (en) 1996-11-13 1999-10-05 Applied Materials, Inc. Methods for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions
US5935340A (en) 1996-11-13 1999-08-10 Applied Materials, Inc. Method and apparatus for gettering fluorine from chamber material surfaces
US5935334A (en) 1996-11-13 1999-08-10 Applied Materials, Inc. Substrate processing apparatus with bottom-mounted remote plasma system
US5939831A (en) 1996-11-13 1999-08-17 Applied Materials, Inc. Methods and apparatus for pre-stabilized plasma generation for microwave clean applications
US5968587A (en) 1996-11-13 1999-10-19 Applied Materials, Inc. Systems and methods for controlling the temperature of a vapor deposition apparatus
US5873781A (en) 1996-11-14 1999-02-23 Bally Gaming International, Inc. Gaming machine having truly random results
US5882786A (en) 1996-11-15 1999-03-16 C3, Inc. Gemstones formed of silicon carbide with diamond coating
US5844195A (en) 1996-11-18 1998-12-01 Applied Materials, Inc. Remote plasma source
US6152070A (en) 1996-11-18 2000-11-28 Applied Materials, Inc. Tandem process chamber
US5830805A (en) 1996-11-18 1998-11-03 Cornell Research Foundation Electroless deposition equipment or apparatus and method of performing electroless deposition
US5855681A (en) 1996-11-18 1999-01-05 Applied Materials, Inc. Ultra high throughput wafer vacuum processing system
US5695810A (en) 1996-11-20 1997-12-09 Cornell Research Foundation, Inc. Use of cobalt tungsten phosphide as a barrier material for copper metallization
US5951896A (en) 1996-12-04 1999-09-14 Micro C Technologies, Inc. Rapid thermal processing heater technology and method of use
FR2756663B1 (fr) 1996-12-04 1999-02-26 Berenguer Marc Procede de traitement d'un substrat semi-conducteur comprenant une etape de traitement de surface
US6312554B1 (en) 1996-12-05 2001-11-06 Applied Materials, Inc. Apparatus and method for controlling the ratio of reactive to non-reactive ions in a semiconductor wafer processing chamber
JPH10172792A (ja) 1996-12-05 1998-06-26 Tokyo Electron Ltd プラズマ処理装置
US5843538A (en) 1996-12-09 1998-12-01 John L. Raymond Method for electroless nickel plating of metal substrates
DE19651646C2 (de) 1996-12-12 2002-07-11 Deutsch Zentr Luft & Raumfahrt Verfahren zum Einblasen einer ersten und zweiten Brennstoffkomponente und Einblaskopf
US6120640A (en) 1996-12-19 2000-09-19 Applied Materials, Inc. Boron carbide parts and coatings in a plasma reactor
US5953635A (en) 1996-12-19 1999-09-14 Intel Corporation Interlayer dielectric with a composite dielectric stack
US5948702A (en) 1996-12-19 1999-09-07 Texas Instruments Incorporated Selective removal of TixNy
KR100234539B1 (ko) 1996-12-24 1999-12-15 윤종용 반도체장치 제조용 식각 장치
US5788825A (en) 1996-12-30 1998-08-04 Samsung Electronics Co., Ltd. Vacuum pumping system for a sputtering device
US5955037A (en) 1996-12-31 1999-09-21 Atmi Ecosys Corporation Effluent gas stream treatment system having utility for oxidation treatment of semiconductor manufacturing effluent gases
DE19700231C2 (de) 1997-01-07 2001-10-04 Geesthacht Gkss Forschung Vorrichtung zum Filtern und Trennen von Strömungsmedien
TW415970B (en) 1997-01-08 2000-12-21 Ebara Corp Vapor-phase film growth apparatus and gas ejection head
US5913147A (en) 1997-01-21 1999-06-15 Advanced Micro Devices, Inc. Method for fabricating copper-aluminum metallization
US5882424A (en) 1997-01-21 1999-03-16 Applied Materials, Inc. Plasma cleaning of a CVD or etch reactor using a low or mixed frequency excitation field
JPH10223608A (ja) 1997-02-04 1998-08-21 Sony Corp 半導体装置の製造方法
US5800621A (en) 1997-02-10 1998-09-01 Applied Materials, Inc. Plasma source for HDP-CVD chamber
US6035101A (en) 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
US6013584A (en) 1997-02-19 2000-01-11 Applied Materials, Inc. Methods and apparatus for forming HDP-CVD PSG film used for advanced pre-metal dielectric layer applications
US5990000A (en) 1997-02-20 1999-11-23 Applied Materials, Inc. Method and apparatus for improving gap-fill capability using chemical and physical etchbacks
DE19706682C2 (de) 1997-02-20 1999-01-14 Bosch Gmbh Robert Anisotropes fluorbasiertes Plasmaätzverfahren für Silizium
US6190233B1 (en) 1997-02-20 2001-02-20 Applied Materials, Inc. Method and apparatus for improving gap-fill capability using chemical and physical etchbacks
US6479373B2 (en) 1997-02-20 2002-11-12 Infineon Technologies Ag Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases
US6059643A (en) 1997-02-21 2000-05-09 Aplex, Inc. Apparatus and method for polishing a flat surface using a belted polishing pad
US6328803B2 (en) 1997-02-21 2001-12-11 Micron Technology, Inc. Method and apparatus for controlling rate of pressure change in a vacuum process chamber
US6267074B1 (en) 1997-02-24 2001-07-31 Foi Corporation Plasma treatment systems
KR100295518B1 (ko) 1997-02-25 2001-11-30 아끼구사 나오유끼 질화실리콘층의에칭방법및반도체장치의제조방법
US5789300A (en) 1997-02-25 1998-08-04 Advanced Micro Devices, Inc. Method of making IGFETs in densely and sparsely populated areas of a substrate
US6039834A (en) 1997-03-05 2000-03-21 Applied Materials, Inc. Apparatus and methods for upgraded substrate processing system with microwave plasma source
TW418461B (en) 1997-03-07 2001-01-11 Tokyo Electron Ltd Plasma etching device
US5850105A (en) 1997-03-21 1998-12-15 Advanced Micro Devices, Inc. Substantially planar semiconductor topography using dielectrics and chemical mechanical polish
TW376547B (en) 1997-03-27 1999-12-11 Matsushita Electric Ind Co Ltd Method and apparatus for plasma processing
US6017414A (en) 1997-03-31 2000-01-25 Lam Research Corporation Method of and apparatus for detecting and controlling in situ cleaning time of vacuum processing chambers
US6030666A (en) 1997-03-31 2000-02-29 Lam Research Corporation Method for microwave plasma substrate heating
US5786276A (en) 1997-03-31 1998-07-28 Applied Materials, Inc. Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and CF4 and O2
JPH10284360A (ja) 1997-04-02 1998-10-23 Hitachi Ltd 基板温度制御装置及び方法
US5968610A (en) 1997-04-02 1999-10-19 United Microelectronics Corp. Multi-step high density plasma chemical vapor deposition process
US5866483A (en) 1997-04-04 1999-02-02 Applied Materials, Inc. Method for anisotropically etching tungsten using SF6, CHF3, and N2
US6174450B1 (en) 1997-04-16 2001-01-16 Lam Research Corporation Methods and apparatus for controlling ion energy and plasma density in a plasma processing system
DE69821044T2 (de) 1997-04-25 2004-06-17 Fuji Photo Film Co., Ltd., Minami-Ashigara Verfahren zur Herstellung eines Aluminiumträgers für lithographische Druckplatten
US6204200B1 (en) 1997-05-05 2001-03-20 Texas Instruments Incorporated Process scheme to form controlled airgaps between interconnect lines to reduce capacitance
US6149828A (en) 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
US5969422A (en) 1997-05-15 1999-10-19 Advanced Micro Devices, Inc. Plated copper interconnect structure
US6083344A (en) 1997-05-29 2000-07-04 Applied Materials, Inc. Multi-zone RF inductively coupled source configuration
US6189483B1 (en) 1997-05-29 2001-02-20 Applied Materials, Inc. Process kit
US6136685A (en) 1997-06-03 2000-10-24 Applied Materials, Inc. High deposition rate recipe for low dielectric constant films
US5937323A (en) 1997-06-03 1999-08-10 Applied Materials, Inc. Sequencing of the recipe steps for the optimal low-k HDP-CVD processing
US6706334B1 (en) 1997-06-04 2004-03-16 Tokyo Electron Limited Processing method and apparatus for removing oxide film
US5872058A (en) 1997-06-17 1999-02-16 Novellus Systems, Inc. High aspect ratio gapfill process by using HDP
US5885749A (en) 1997-06-20 1999-03-23 Clear Logic, Inc. Method of customizing integrated circuits by selective secondary deposition of layer interconnect material
US5933757A (en) 1997-06-23 1999-08-03 Lsi Logic Corporation Etch process selective to cobalt silicide for formation of integrated circuit structures
US6815633B1 (en) 1997-06-26 2004-11-09 Applied Science & Technology, Inc. Inductively-coupled toroidal plasma source
US6150628A (en) 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6388226B1 (en) 1997-06-26 2002-05-14 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6518155B1 (en) 1997-06-30 2003-02-11 Intel Corporation Device structure and method for reducing silicide encroachment
US6184121B1 (en) 1997-07-10 2001-02-06 International Business Machines Corporation Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same
US5944049A (en) 1997-07-15 1999-08-31 Applied Materials, Inc. Apparatus and method for regulating a pressure in a chamber
JPH1136076A (ja) 1997-07-16 1999-02-09 Tokyo Electron Ltd Ｃｖｄ成膜装置およびｃｖｄ成膜方法
US5982100A (en) 1997-07-28 1999-11-09 Pars, Inc. Inductively coupled plasma reactor
US5814365A (en) 1997-08-15 1998-09-29 Micro C Technologies, Inc. Reactor and method of processing a semiconductor substate
US6090212A (en) 1997-08-15 2000-07-18 Micro C Technologies, Inc. Substrate platform for a semiconductor substrate during rapid high temperature processing and method of supporting a substrate
US6007635A (en) 1997-11-26 1999-12-28 Micro C Technologies, Inc. Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing
US5926737A (en) 1997-08-19 1999-07-20 Tokyo Electron Limited Use of TiCl4 etchback process during integrated CVD-Ti/TiN wafer processing
US6080446A (en) 1997-08-21 2000-06-27 Anelva Corporation Method of depositing titanium nitride thin film and CVD deposition apparatus
US6258170B1 (en) 1997-09-11 2001-07-10 Applied Materials, Inc. Vaporization and deposition apparatus
US6063688A (en) 1997-09-29 2000-05-16 Intel Corporation Fabrication of deep submicron structures and quantum wire transistors using hard-mask transistor width definition
US6161500A (en) 1997-09-30 2000-12-19 Tokyo Electron Limited Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
US6364957B1 (en) 1997-10-09 2002-04-02 Applied Materials, Inc. Support assembly with thermal expansion compensation
US6688375B1 (en) 1997-10-14 2004-02-10 Applied Materials, Inc. Vacuum processing system having improved substrate heating and cooling
GB9722028D0 (en) 1997-10-17 1997-12-17 Shipley Company Ll C Plating of polymers
US6110556A (en) 1997-10-17 2000-08-29 Applied Materials, Inc. Lid assembly for a process chamber employing asymmetric flow geometries
US6379575B1 (en) 1997-10-21 2002-04-30 Applied Materials, Inc. Treatment of etching chambers using activated cleaning gas
US6136693A (en) 1997-10-27 2000-10-24 Chartered Semiconductor Manufacturing Ltd. Method for planarized interconnect vias using electroless plating and CMP
US6013191A (en) 1997-10-27 2000-01-11 Advanced Refractory Technologies, Inc. Method of polishing CVD diamond films by oxygen plasma
US6063712A (en) 1997-11-25 2000-05-16 Micron Technology, Inc. Oxide etch and method of etching
US5849639A (en) 1997-11-26 1998-12-15 Lucent Technologies Inc. Method for removing etching residues and contaminants
US6136165A (en) 1997-11-26 2000-10-24 Cvc Products, Inc. Apparatus for inductively-coupled-plasma-enhanced ionized physical-vapor deposition
US6079356A (en) 1997-12-02 2000-06-27 Applied Materials, Inc. Reactor optimized for chemical vapor deposition of titanium
US6077780A (en) 1997-12-03 2000-06-20 Advanced Micro Devices, Inc. Method for filling high aspect ratio openings of an integrated circuit to minimize electromigration failure
US5976327A (en) 1997-12-12 1999-11-02 Applied Materials, Inc. Step coverage and overhang improvement by pedestal bias voltage modulation
US6143476A (en) 1997-12-12 2000-11-07 Applied Materials Inc Method for high temperature etching of patterned layers using an organic mask stack
US6083844A (en) 1997-12-22 2000-07-04 Lam Research Corporation Techniques for etching an oxide layer
US6071573A (en) * 1997-12-30 2000-06-06 Lam Research Corporation Process for precoating plasma CVD reactors
US6415858B1 (en) 1997-12-31 2002-07-09 Temptronic Corporation Temperature control system for a workpiece chuck
US6406759B1 (en) 1998-01-08 2002-06-18 The University Of Tennessee Research Corporation Remote exposure of workpieces using a recirculated plasma
US6140234A (en) 1998-01-20 2000-10-31 International Business Machines Corporation Method to selectively fill recesses with conductive metal
US6074514A (en) 1998-02-09 2000-06-13 Applied Materials, Inc. High selectivity etch using an external plasma discharge
US6635578B1 (en) 1998-02-09 2003-10-21 Applied Materials, Inc Method of operating a dual chamber reactor with neutral density decoupled from ion density
US5932077A (en) 1998-02-09 1999-08-03 Reynolds Tech Fabricators, Inc. Plating cell with horizontal product load mechanism
US6054379A (en) 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6627532B1 (en) 1998-02-11 2003-09-30 Applied Materials, Inc. Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition
US6186091B1 (en) 1998-02-11 2001-02-13 Silicon Genesis Corporation Shielded platen design for plasma immersion ion implantation
US6340435B1 (en) 1998-02-11 2002-01-22 Applied Materials, Inc. Integrated low K dielectrics and etch stops
US6197688B1 (en) 1998-02-12 2001-03-06 Motorola Inc. Interconnect structure in a semiconductor device and method of formation
US6171661B1 (en) 1998-02-25 2001-01-09 Applied Materials, Inc. Deposition of copper with increased adhesion
US6892669B2 (en) 1998-02-26 2005-05-17 Anelva Corporation CVD apparatus
JP4151862B2 (ja) 1998-02-26 2008-09-17 キヤノンアネルバ株式会社 Ｃｖｄ装置
US6551939B2 (en) 1998-03-17 2003-04-22 Anneal Corporation Plasma surface treatment method and resulting device
US5920792A (en) 1998-03-19 1999-07-06 Winbond Electronics Corp High density plasma enhanced chemical vapor deposition process in combination with chemical mechanical polishing process for preparation and planarization of intemetal dielectric layers
US6565729B2 (en) 1998-03-20 2003-05-20 Semitool, Inc. Method for electrochemically depositing metal on a semiconductor workpiece
US6194038B1 (en) 1998-03-20 2001-02-27 Applied Materials, Inc. Method for deposition of a conformal layer on a substrate
US6197181B1 (en) 1998-03-20 2001-03-06 Semitool, Inc. Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece
US6602434B1 (en) 1998-03-27 2003-08-05 Applied Materials, Inc. Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window
US6203657B1 (en) 1998-03-31 2001-03-20 Lam Research Corporation Inductively coupled plasma downstream strip module
US6395150B1 (en) 1998-04-01 2002-05-28 Novellus Systems, Inc. Very high aspect ratio gapfill using HDP
JP2976965B2 (ja) 1998-04-02 1999-11-10 日新電機株式会社 成膜方法及び成膜装置
KR20010042419A (ko) 1998-04-02 2001-05-25 조셉 제이. 스위니 낮은 ｋ 유전체를 에칭하는 방법
US6198616B1 (en) 1998-04-03 2001-03-06 Applied Materials, Inc. Method and apparatus for supplying a chucking voltage to an electrostatic chuck within a semiconductor wafer processing system
US6174810B1 (en) 1998-04-06 2001-01-16 Motorola, Inc. Copper interconnect structure and method of formation
US6117245A (en) 1998-04-08 2000-09-12 Applied Materials, Inc. Method and apparatus for controlling cooling and heating fluids for a gas distribution plate
US5997649A (en) 1998-04-09 1999-12-07 Tokyo Electron Limited Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
US6184489B1 (en) 1998-04-13 2001-02-06 Nec Corporation Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles
US6113771A (en) 1998-04-21 2000-09-05 Applied Materials, Inc. Electro deposition chemistry
US6416647B1 (en) 1998-04-21 2002-07-09 Applied Materials, Inc. Electro-chemical deposition cell for face-up processing of single semiconductor substrates
US6077386A (en) 1998-04-23 2000-06-20 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6179924B1 (en) 1998-04-28 2001-01-30 Applied Materials, Inc. Heater for use in substrate processing apparatus to deposit tungsten
US6093594A (en) 1998-04-29 2000-07-25 Advanced Micro Devices, Inc. CMOS optimization method utilizing sacrificial sidewall spacer
US6081414A (en) 1998-05-01 2000-06-27 Applied Materials, Inc. Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system
US6030881A (en) 1998-05-05 2000-02-29 Novellus Systems, Inc. High throughput chemical vapor deposition process capable of filling high aspect ratio structures
US6218288B1 (en) 1998-05-11 2001-04-17 Micron Technology, Inc. Multiple step methods for forming conformal layers
US6509283B1 (en) 1998-05-13 2003-01-21 National Semiconductor Corporation Thermal oxidation method utilizing atomic oxygen to reduce dangling bonds in silicon dioxide grown on silicon
KR100505310B1 (ko) 1998-05-13 2005-08-04 동경 엘렉트론 주식회사 성막 장치 및 방법
US6007785A (en) 1998-05-20 1999-12-28 Academia Sinica Apparatus for efficient ozone generation
US6148761A (en) 1998-06-16 2000-11-21 Applied Materials, Inc. Dual channel gas distribution plate
US6302964B1 (en) 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6086677A (en) 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
KR100296137B1 (ko) 1998-06-16 2001-08-07 박종섭 보호막으로서고밀도플라즈마화학기상증착에의한절연막을갖는반도체소자제조방법
US6147009A (en) 1998-06-29 2000-11-14 International Business Machines Corporation Hydrogenated oxidized silicon carbon material
US6562128B1 (en) 2001-11-28 2003-05-13 Seh America, Inc. In-situ post epitaxial treatment process
JP2003517190A (ja) 1998-06-30 2003-05-20 セミトウール・インコーポレーテツド ミクロ電子工学の適用のための金属被覆構造物及びその構造物の形成法
US6037018A (en) 1998-07-01 2000-03-14 Taiwan Semiconductor Maufacturing Company Shallow trench isolation filled by high density plasma chemical vapor deposition
US6248429B1 (en) 1998-07-06 2001-06-19 Micron Technology, Inc. Metallized recess in a substrate
JP2000026975A (ja) 1998-07-09 2000-01-25 Komatsu Ltd 表面処理装置
KR100265866B1 (ko) 1998-07-11 2000-12-01 황철주 반도체 제조장치
US6182603B1 (en) 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
US6063683A (en) 1998-07-27 2000-05-16 Acer Semiconductor Manufacturing, Inc. Method of fabricating a self-aligned crown-shaped capacitor for high density DRAM cells
US6436816B1 (en) 1998-07-31 2002-08-20 Industrial Technology Research Institute Method of electroless plating copper on nitride barrier
US6162370A (en) 1998-08-28 2000-12-19 Ashland Inc. Composition and method for selectively etching a silicon nitride film
US6383951B1 (en) 1998-09-03 2002-05-07 Micron Technology, Inc. Low dielectric constant material for integrated circuit fabrication
US6440863B1 (en) 1998-09-04 2002-08-27 Taiwan Semiconductor Manufacturing Company Plasma etch method for forming patterned oxygen containing plasma etchable layer
US6165912A (en) 1998-09-17 2000-12-26 Cfmt, Inc. Electroless metal deposition of electronic components in an enclosable vessel
US6037266A (en) 1998-09-28 2000-03-14 Taiwan Semiconductor Manufacturing Company Method for patterning a polysilicon gate with a thin gate oxide in a polysilicon etcher
JP3725708B2 (ja) 1998-09-29 2005-12-14 株式会社東芝 半導体装置
US6170429B1 (en) 1998-09-30 2001-01-09 Lam Research Corporation Chamber liner for semiconductor process chambers
US6277733B1 (en) 1998-10-05 2001-08-21 Texas Instruments Incorporated Oxygen-free, dry plasma process for polymer removal
JP3764594B2 (ja) 1998-10-12 2006-04-12 株式会社日立製作所 プラズマ処理方法
US6180523B1 (en) 1998-10-13 2001-01-30 Industrial Technology Research Institute Copper metallization of USLI by electroless process
US6228758B1 (en) 1998-10-14 2001-05-08 Advanced Micro Devices, Inc. Method of making dual damascene conductive interconnections and integrated circuit device comprising same
US6251802B1 (en) 1998-10-19 2001-06-26 Micron Technology, Inc. Methods of forming carbon-containing layers
US6107199A (en) 1998-10-24 2000-08-22 International Business Machines Corporation Method for improving the morphology of refractory metal thin films
US20030101938A1 (en) 1998-10-27 2003-06-05 Applied Materials, Inc. Apparatus for the deposition of high dielectric constant films
US6454860B2 (en) 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
JP3064268B2 (ja) 1998-10-29 2000-07-12 アプライド マテリアルズ インコーポレイテッド 成膜方法及び装置
US6176198B1 (en) 1998-11-02 2001-01-23 Applied Materials, Inc. Apparatus and method for depositing low K dielectric materials
US6462371B1 (en) 1998-11-24 2002-10-08 Micron Technology Inc. Films doped with carbon for use in integrated circuit technology
US6203863B1 (en) 1998-11-27 2001-03-20 United Microelectronics Corp. Method of gap filling
US6228233B1 (en) 1998-11-30 2001-05-08 Applied Materials, Inc. Inflatable compliant bladder assembly
US6251236B1 (en) 1998-11-30 2001-06-26 Applied Materials, Inc. Cathode contact ring for electrochemical deposition
US6258220B1 (en) 1998-11-30 2001-07-10 Applied Materials, Inc. Electro-chemical deposition system
US6015747A (en) 1998-12-07 2000-01-18 Advanced Micro Device Method of metal/polysilicon gate formation in a field effect transistor
US6242349B1 (en) 1998-12-09 2001-06-05 Advanced Micro Devices, Inc. Method of forming copper/copper alloy interconnection with reduced electromigration
US6364954B2 (en) 1998-12-14 2002-04-02 Applied Materials, Inc. High temperature chemical vapor deposition chamber
EP1014434B1 (de) 1998-12-24 2008-03-26 ATMEL Germany GmbH Verfahren zum anisotropen plasmachemischen Trockenätzen von Siliziumnitrid-Schichten mittels eines Fluor-enthaltenden Gasgemisches
DE19901210A1 (de) 1999-01-14 2000-07-27 Siemens Ag Halbleiterbauelement und Verfahren zu dessen Herstellung
KR100331544B1 (ko) 1999-01-18 2002-04-06 윤종용 반응챔버에 가스를 유입하는 방법 및 이에 사용되는 샤워헤드
US6499425B1 (en) 1999-01-22 2002-12-31 Micron Technology, Inc. Quasi-remote plasma processing method and apparatus
TW428256B (en) 1999-01-25 2001-04-01 United Microelectronics Corp Structure of conducting-wire layer and its fabricating method
JP3330554B2 (ja) 1999-01-27 2002-09-30 松下電器産業株式会社 エッチング方法
US6740247B1 (en) 1999-02-05 2004-05-25 Massachusetts Institute Of Technology HF vapor phase wafer cleaning and oxide etching
US6245669B1 (en) 1999-02-05 2001-06-12 Taiwan Semiconductor Manufacturing Company High selectivity Si-rich SiON etch-stop layer
KR100322545B1 (ko) 1999-02-10 2002-03-18 윤종용 건식 세정 공정을 전 공정으로 이용하는 반도체 장치의콘택홀 채움 방법
US6010962A (en) 1999-02-12 2000-01-04 Taiwan Semiconductor Manufacturing Company Copper chemical-mechanical-polishing (CMP) dishing
US6245670B1 (en) 1999-02-19 2001-06-12 Advanced Micro Devices, Inc. Method for filling a dual damascene opening having high aspect ratio to minimize electromigration failure
TW469534B (en) 1999-02-23 2001-12-21 Matsushita Electric Ind Co Ltd Plasma processing method and apparatus
US6291282B1 (en) 1999-02-26 2001-09-18 Texas Instruments Incorporated Method of forming dual metal gate structures or CMOS devices
TW582050B (en) 1999-03-03 2004-04-01 Ebara Corp Apparatus and method for processing substrate
US6136163A (en) 1999-03-05 2000-10-24 Applied Materials, Inc. Apparatus for electro-chemical deposition with thermal anneal chamber
US6312995B1 (en) 1999-03-08 2001-11-06 Advanced Micro Devices, Inc. MOS transistor with assisted-gates and ultra-shallow “Psuedo” source and drain extensions for ultra-large-scale integration
US6468604B1 (en) 1999-03-17 2002-10-22 Anelva Corporation Method for manufacturing a titanium nitride thin film
US6197705B1 (en) 1999-03-18 2001-03-06 Chartered Semiconductor Manufacturing Ltd. Method of silicon oxide and silicon glass films deposition
US6797189B2 (en) 1999-03-25 2004-09-28 Hoiman (Raymond) Hung Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon
US6144099A (en) 1999-03-30 2000-11-07 Advanced Micro Devices, Inc. Semiconductor metalization barrier
US6238582B1 (en) 1999-03-30 2001-05-29 Veeco Instruments, Inc. Reactive ion beam etching method and a thin film head fabricated using the method
JP2000290777A (ja) 1999-04-07 2000-10-17 Tokyo Electron Ltd ガス処理装置、バッフル部材、及びガス処理方法
US6263830B1 (en) 1999-04-12 2001-07-24 Matrix Integrated Systems, Inc. Microwave choke for remote plasma generator
US6099697A (en) 1999-04-13 2000-08-08 Applied Materials, Inc. Method of and apparatus for restoring a support surface in a semiconductor wafer processing system
US6450116B1 (en) 1999-04-22 2002-09-17 Applied Materials, Inc. Apparatus for exposing a substrate to plasma radicals
US6110836A (en) 1999-04-22 2000-08-29 Applied Materials, Inc. Reactive plasma etch cleaning of high aspect ratio openings
US6110832A (en) 1999-04-28 2000-08-29 International Business Machines Corporation Method and apparatus for slurry polishing
JP3965258B2 (ja) 1999-04-30 2007-08-29 日本碍子株式会社 半導体製造装置用のセラミックス製ガス供給構造
US6541671B1 (en) 2002-02-13 2003-04-01 The Regents Of The University Of California Synthesis of 2H- and 13C-substituted dithanes
JP3099066B1 (ja) 1999-05-07 2000-10-16 東京工業大学長 薄膜構造体の製造方法
US6310755B1 (en) 1999-05-07 2001-10-30 Applied Materials, Inc. Electrostatic chuck having gas cavity and method
US6490146B2 (en) 1999-05-07 2002-12-03 Applied Materials Inc. Electrostatic chuck bonded to base with a bond layer and method
JP3482904B2 (ja) 1999-05-10 2004-01-06 松下電器産業株式会社 プラズマ処理方法及び装置
US20020129902A1 (en) 1999-05-14 2002-09-19 Babayan Steven E. Low-temperature compatible wide-pressure-range plasma flow device
US7091605B2 (en) 2001-09-21 2006-08-15 Eastman Kodak Company Highly moisture-sensitive electronic device element and method for fabrication
US6129829A (en) 1999-05-14 2000-10-10 Thompson; Donald E. Electrostatic filter for dielectric fluid
JP2000331993A (ja) 1999-05-19 2000-11-30 Mitsubishi Electric Corp プラズマ処理装置
US6464795B1 (en) 1999-05-21 2002-10-15 Applied Materials, Inc. Substrate support member for a processing chamber
US6323128B1 (en) 1999-05-26 2001-11-27 International Business Machines Corporation Method for forming Co-W-P-Au films
KR100416308B1 (ko) 1999-05-26 2004-01-31 동경 엘렉트론 주식회사 플라즈마 처리 장치
JP3320685B2 (ja) 1999-06-02 2002-09-03 株式会社半導体先端テクノロジーズ 微細パターン形成方法
US6916399B1 (en) 1999-06-03 2005-07-12 Applied Materials Inc Temperature controlled window with a fluid supply system
US6565661B1 (en) 1999-06-04 2003-05-20 Simplus Systems Corporation High flow conductance and high thermal conductance showerhead system and method
US6174812B1 (en) 1999-06-08 2001-01-16 United Microelectronics Corp. Copper damascene technology for ultra large scale integration circuits
US20020033233A1 (en) 1999-06-08 2002-03-21 Stephen E. Savas Icp reactor having a conically-shaped plasma-generating section
US6367413B1 (en) 1999-06-15 2002-04-09 Tokyo Electron Limited Apparatus for monitoring substrate biasing during plasma processing of a substrate
US6821571B2 (en) 1999-06-18 2004-11-23 Applied Materials Inc. Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
US6161576A (en) 1999-06-23 2000-12-19 Mks Instruments, Inc. Integrated turbo pump and control valve system
US6110530A (en) 1999-06-25 2000-08-29 Applied Materials, Inc. CVD method of depositing copper films by using improved organocopper precursor blend
US6277752B1 (en) 1999-06-28 2001-08-21 Taiwan Semiconductor Manufacturing Company Multiple etch method for forming residue free patterned hard mask layer
FR2795555B1 (fr) 1999-06-28 2002-12-13 France Telecom Procede de fabrication d'un dispositif semi-conducteur comprenant un empilement forme alternativement de couches de silicium et de couches de materiau dielectrique
US6242360B1 (en) 1999-06-29 2001-06-05 Lam Research Corporation Plasma processing system apparatus, and method for delivering RF power to a plasma processing
US6444083B1 (en) 1999-06-30 2002-09-03 Lam Research Corporation Corrosion resistant component of semiconductor processing equipment and method of manufacturing thereof
US6245192B1 (en) 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6415736B1 (en) 1999-06-30 2002-07-09 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6258223B1 (en) 1999-07-09 2001-07-10 Applied Materials, Inc. In-situ electroless copper seed layer enhancement in an electroplating system
US6352081B1 (en) 1999-07-09 2002-03-05 Applied Materials, Inc. Method of cleaning a semiconductor device processing chamber after a copper etch process
US6516815B1 (en) 1999-07-09 2003-02-11 Applied Materials, Inc. Edge bead removal/spin rinse dry (EBR/SRD) module
US6351013B1 (en) 1999-07-13 2002-02-26 Advanced Micro Devices, Inc. Low-K sub spacer pocket formation for gate capacitance reduction
US6342733B1 (en) 1999-07-27 2002-01-29 International Business Machines Corporation Reduced electromigration and stressed induced migration of Cu wires by surface coating
US6281135B1 (en) 1999-08-05 2001-08-28 Axcelis Technologies, Inc. Oxygen free plasma stripping process
US6237527B1 (en) 1999-08-06 2001-05-29 Axcelis Technologies, Inc. System for improving energy purity and implant consistency, and for minimizing charge accumulation of an implanted substrate
US6235643B1 (en) 1999-08-10 2001-05-22 Applied Materials, Inc. Method for etching a trench having rounded top and bottom corners in a silicon substrate
EP1077479A1 (en) 1999-08-17 2001-02-21 Applied Materials, Inc. Post-deposition treatment to enchance properties of Si-O-C low K film
EP1077274A1 (en) 1999-08-17 2001-02-21 Applied Materials, Inc. Lid cooling mechanism and method for optimized deposition of low-k dielectric using tri methylsilane-ozone based processes
US6602806B1 (en) 1999-08-17 2003-08-05 Applied Materials, Inc. Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film
EP1077480B1 (en) 1999-08-17 2008-11-12 Applied Materials, Inc. Method and apparatus to enhance properties of Si-O-C low K films
DE60041341D1 (de) 1999-08-17 2009-02-26 Tokyo Electron Ltd Gepulstes plasmabehandlungsverfahren und vorrichtung
JP4220075B2 (ja) 1999-08-20 2009-02-04 東京エレクトロン株式会社 成膜方法および成膜装置
US6322716B1 (en) 1999-08-30 2001-11-27 Cypress Semiconductor Corp. Method for conditioning a plasma etch chamber
US6375748B1 (en) 1999-09-01 2002-04-23 Applied Materials, Inc. Method and apparatus for preventing edge deposition
EP1083593A1 (en) 1999-09-10 2001-03-14 Interuniversitair Micro-Elektronica Centrum Vzw Etching of silicon nitride by anhydrous halogen gas
US6441492B1 (en) 1999-09-10 2002-08-27 James A. Cunningham Diffusion barriers for copper interconnect systems
US6548414B2 (en) 1999-09-14 2003-04-15 Infineon Technologies Ag Method of plasma etching thin films of difficult to dry etch materials
JP3514186B2 (ja) 1999-09-16 2004-03-31 日新電機株式会社 薄膜形成方法及び装置
US6503843B1 (en) 1999-09-21 2003-01-07 Applied Materials, Inc. Multistep chamber cleaning and film deposition process using a remote plasma that also enhances film gap fill
US6432819B1 (en) 1999-09-27 2002-08-13 Applied Materials, Inc. Method and apparatus of forming a sputtered doped seed layer
US6153935A (en) 1999-09-30 2000-11-28 International Business Machines Corporation Dual etch stop/diffusion barrier for damascene interconnects
US6287643B1 (en) 1999-09-30 2001-09-11 Novellus Systems, Inc. Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor
US6321587B1 (en) 1999-10-15 2001-11-27 Radian International Llc Solid state fluorine sensor system and method
US6423284B1 (en) 1999-10-18 2002-07-23 Advanced Technology Materials, Inc. Fluorine abatement using steam injection in oxidation treatment of semiconductor manufacturing effluent gases
US6364949B1 (en) 1999-10-19 2002-04-02 Applied Materials, Inc. 300 mm CVD chamber design for metal-organic thin film deposition
KR100338768B1 (ko) 1999-10-25 2002-05-30 윤종용 산화막 제거방법 및 산화막 제거를 위한 반도체 제조 장치
DE29919142U1 (de) 1999-10-30 2001-03-08 Agrodyn Hochspannungstechnik GmbH, 33803 Steinhagen Plasmadüse
US6551924B1 (en) 1999-11-02 2003-04-22 International Business Machines Corporation Post metalization chem-mech polishing dielectric etch
JP3366301B2 (ja) 1999-11-10 2003-01-14 日本電気株式会社 プラズマｃｖｄ装置
US6162302A (en) 1999-11-16 2000-12-19 Agilent Technologies Method of cleaning quartz substrates using conductive solutions
US8114245B2 (en) 1999-11-26 2012-02-14 Tadahiro Ohmi Plasma etching device
US6573194B2 (en) 1999-11-29 2003-06-03 Texas Instruments Incorporated Method of growing surface aluminum nitride on aluminum films with low energy barrier
US6465350B1 (en) 1999-11-29 2002-10-15 Texas Instruments Incorporated Aluminum nitride thin film formation on integrated circuits
US6599842B2 (en) 1999-11-29 2003-07-29 Applied Materials, Inc. Method for rounding corners and removing damaged outer surfaces of a trench
WO2001040537A1 (en) 1999-11-30 2001-06-07 The Regents Of The University Of California Method for producing fluorinated diamond-like carbon films
US6342453B1 (en) 1999-12-03 2002-01-29 Applied Materials, Inc. Method for CVD process control for enhancing device performance
JP2001164371A (ja) 1999-12-07 2001-06-19 Nec Corp プラズマｃｖｄ装置およびプラズマｃｖｄ成膜法
DE10060002B4 (de) 1999-12-07 2016-01-28 Komatsu Ltd. Vorrichtung zur Oberflächenbehandlung
TW514996B (en) 1999-12-10 2002-12-21 Tokyo Electron Ltd Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
JP3659101B2 (ja) 1999-12-13 2005-06-15 富士ゼロックス株式会社 窒化物半導体素子及びその製造方法
JP4695238B2 (ja) 1999-12-14 2011-06-08 東京エレクトロン株式会社 圧力制御方法
US6277763B1 (en) 1999-12-16 2001-08-21 Applied Materials, Inc. Plasma processing of tungsten using a gas mixture comprising a fluorinated gas and oxygen
KR100385133B1 (ko) 1999-12-16 2003-05-22 엘지전자 주식회사 교환기의 셀 다중화/역다중화 시스템
US6225745B1 (en) 1999-12-17 2001-05-01 Axcelis Technologies, Inc. Dual plasma source for plasma process chamber
US6534809B2 (en) 1999-12-22 2003-03-18 Agilent Technologies, Inc. Hardmask designs for dry etching FeRAM capacitor stacks
WO2001046492A1 (en) 1999-12-22 2001-06-28 Tokyo Electron Limited Method and system for reducing damage to substrates during plasma processing with a resonator source
US6350697B1 (en) 1999-12-22 2002-02-26 Lam Research Corporation Method of cleaning and conditioning plasma reaction chamber
US6238513B1 (en) 1999-12-28 2001-05-29 International Business Machines Corporation Wafer lift assembly
US6463782B1 (en) 2000-01-13 2002-10-15 Taiwan Semiconductor Manufacturing Co., Ltd. Self-centering calibration tool and method of calibrating
US6306246B1 (en) 2000-01-14 2001-10-23 Advanced Micro Devices, Inc. Dual window optical port for improved end point detection
KR100767762B1 (ko) 2000-01-18 2007-10-17 에이에스엠 저펜 가부시기가이샤 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치
US6772827B2 (en) 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
US6477980B1 (en) 2000-01-20 2002-11-12 Applied Materials, Inc. Flexibly suspended gas distribution manifold for plasma chamber
US6656831B1 (en) 2000-01-26 2003-12-02 Applied Materials, Inc. Plasma-enhanced chemical vapor deposition of a metal nitride layer
US6494959B1 (en) 2000-01-28 2002-12-17 Applied Materials, Inc. Process and apparatus for cleaning a silicon surface
JP3723712B2 (ja) 2000-02-10 2005-12-07 株式会社日立国際電気 基板処理装置及び基板処理方法
US6447636B1 (en) 2000-02-16 2002-09-10 Applied Materials, Inc. Plasma reactor with dynamic RF inductive and capacitive coupling control
KR100378871B1 (ko) 2000-02-16 2003-04-07 주식회사 아펙스 라디칼 증착을 위한 샤워헤드장치
US6743473B1 (en) 2000-02-16 2004-06-01 Applied Materials, Inc. Chemical vapor deposition of barriers from novel precursors
US6573030B1 (en) 2000-02-17 2003-06-03 Applied Materials, Inc. Method for depositing an amorphous carbon layer
TW580735B (en) 2000-02-21 2004-03-21 Hitachi Ltd Plasma treatment apparatus and treating method of sample material
US6350320B1 (en) 2000-02-22 2002-02-26 Applied Materials, Inc. Heater for processing chamber
US6319766B1 (en) 2000-02-22 2001-11-20 Applied Materials, Inc. Method of tantalum nitride deposition by tantalum oxide densification
EP1127957A1 (en) 2000-02-24 2001-08-29 Asm Japan K.K. A film forming apparatus having cleaning function
US6391788B1 (en) 2000-02-25 2002-05-21 Applied Materials, Inc. Two etchant etch method
US6958098B2 (en) 2000-02-28 2005-10-25 Applied Materials, Inc. Semiconductor wafer support lift-pin assembly
JP2001319885A (ja) 2000-03-02 2001-11-16 Hitachi Kokusai Electric Inc 基板処理装置及び半導体製造方法
JP3979791B2 (ja) 2000-03-08 2007-09-19 株式会社ルネサステクノロジ 半導体装置およびその製造方法
US6537707B1 (en) 2000-03-15 2003-03-25 Agilent Technologies, Inc. Two-stage roughing and controlled deposition rates for fabricating laser ablation masks
US6900596B2 (en) 2002-07-09 2005-05-31 Applied Materials, Inc. Capacitively coupled plasma reactor with uniform radial distribution of plasma
US6528751B1 (en) 2000-03-17 2003-03-04 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma
US7196283B2 (en) 2000-03-17 2007-03-27 Applied Materials, Inc. Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface
US6527968B1 (en) 2000-03-27 2003-03-04 Applied Materials Inc. Two-stage self-cleaning silicon etch process
JP3433721B2 (ja) 2000-03-28 2003-08-04 ティーディーケイ株式会社 ドライエッチング方法及び微細加工方法
JP2003529926A (ja) 2000-03-30 2003-10-07 東京エレクトロン株式会社 プラズマ処理システム内への調整可能なガス注入のための方法及び装置
JP2001284340A (ja) 2000-03-30 2001-10-12 Hitachi Kokusai Electric Inc 半導体製造装置および半導体装置の製造方法
JP4056195B2 (ja) 2000-03-30 2008-03-05 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
DE10016340C1 (de) 2000-03-31 2001-12-06 Promos Technologies Inc Verfahren zur Herstellung von flaschenförmigen Tiefgräben zur Verwendung in Halbleitervorrichtungen
US6558564B1 (en) 2000-04-05 2003-05-06 Applied Materials Inc. Plasma energy control by inducing plasma instability
JP2001355074A (ja) 2000-04-10 2001-12-25 Sony Corp 無電解メッキ処理方法およびその装置
US7892974B2 (en) 2000-04-11 2011-02-22 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits
KR20010096229A (ko) 2000-04-18 2001-11-07 황 철 주 반도체 소자의 극박막 형성장치 및 그 형성방법
US6762129B2 (en) 2000-04-19 2004-07-13 Matsushita Electric Industrial Co., Ltd. Dry etching method, fabrication method for semiconductor device, and dry etching apparatus
JP2001308023A (ja) 2000-04-21 2001-11-02 Tokyo Electron Ltd 熱処理装置及び方法
US6329297B1 (en) 2000-04-21 2001-12-11 Applied Materials, Inc. Dilute remote plasma clean
US6502530B1 (en) 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
JP2001313282A (ja) 2000-04-28 2001-11-09 Nec Corp ドライエッチング方法
US6387207B1 (en) 2000-04-28 2002-05-14 Applied Materials, Inc. Integration of remote plasma generator with semiconductor processing chamber
US6458718B1 (en) 2000-04-28 2002-10-01 Asm Japan K.K. Fluorine-containing materials and processes
KR100367662B1 (ko) 2000-05-02 2003-01-10 주식회사 셈테크놀러지 하이퍼서멀 중성입자 발생 장치 및 이를 채용하는 중성입자 처리 장치
JP3662472B2 (ja) 2000-05-09 2005-06-22 エム・エフエスアイ株式会社 基板表面の処理方法
WO2001086717A1 (fr) 2000-05-10 2001-11-15 Ibiden Co., Ltd. Mandrin electrostatique
US6679981B1 (en) 2000-05-11 2004-01-20 Applied Materials, Inc. Inductive plasma loop enhancing magnetron sputtering
CN1199247C (zh) 2000-05-17 2005-04-27 东京毅力科创株式会社 等离子体刻蚀处理装置及其维护方法
JP3448737B2 (ja) 2000-05-25 2003-09-22 住友重機械工業株式会社 ウエハーチャック用冷却板及びウエハーチャック
US6418874B1 (en) 2000-05-25 2002-07-16 Applied Materials, Inc. Toroidal plasma source for plasma processing
US6645585B2 (en) 2000-05-30 2003-11-11 Kyocera Corporation Container for treating with corrosive-gas and plasma and method for manufacturing the same
TW454429B (en) 2000-05-31 2001-09-11 Nanya Technology Corp Plasma generator
JP2002194547A (ja) 2000-06-08 2002-07-10 Applied Materials Inc アモルファスカーボン層の堆積方法
KR20010111058A (ko) 2000-06-09 2001-12-15 조셉 제이. 스위니 전체 영역 온도 제어 정전기 척 및 그 제조방법
US6603269B1 (en) 2000-06-13 2003-08-05 Applied Materials, Inc. Resonant chamber applicator for remote plasma source
US6509623B2 (en) 2000-06-15 2003-01-21 Newport Fab, Llc Microelectronic air-gap structures and methods of forming the same
US6391753B1 (en) 2000-06-20 2002-05-21 Advanced Micro Devices, Inc. Process for forming gate conductors
US6531069B1 (en) 2000-06-22 2003-03-11 International Business Machines Corporation Reactive Ion Etching chamber design for flip chip interconnections
US6645550B1 (en) 2000-06-22 2003-11-11 Applied Materials, Inc. Method of treating a substrate
US6427623B2 (en) 2000-06-23 2002-08-06 Anelva Corporation Chemical vapor deposition system
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
JP4371543B2 (ja) 2000-06-29 2009-11-25 日本電気株式会社 リモートプラズマｃｖｄ装置及び膜形成方法
US6303418B1 (en) 2000-06-30 2001-10-16 Chartered Semiconductor Manufacturing Ltd. Method of fabricating CMOS devices featuring dual gate structures and a high dielectric constant gate insulator layer
US6835278B2 (en) 2000-07-07 2004-12-28 Mattson Technology Inc. Systems and methods for remote plasma clean
DE10032607B4 (de) 2000-07-07 2004-08-12 Leo Elektronenmikroskopie Gmbh Teilchenstrahlgerät mit einer im Ultrahochvakuum zu betreibenden Teilchenquelle und kaskadenförmige Pumpanordnung für ein solches Teilchenstrahlgerät
US6736987B1 (en) 2000-07-12 2004-05-18 Techbank Corporation Silicon etching apparatus using XeF2
US6440870B1 (en) 2000-07-12 2002-08-27 Applied Materials, Inc. Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
US6794311B2 (en) 2000-07-14 2004-09-21 Applied Materials Inc. Method and apparatus for treating low k dielectric layers to reduce diffusion
KR100366623B1 (ko) 2000-07-18 2003-01-09 삼성전자 주식회사 반도체 기판 또는 ｌｃｄ 기판의 세정방법
EP1248293A1 (en) 2000-07-25 2002-10-09 Ibiden Co., Ltd. Ceramic substrate for semiconductor manufacture/inspection apparatus, ceramic heater, electrostatic clampless holder, and substrate for wafer prober
US6764958B1 (en) 2000-07-28 2004-07-20 Applied Materials Inc. Method of depositing dielectric films
US20020185226A1 (en) 2000-08-10 2002-12-12 Lea Leslie Michael Plasma processing apparatus
US6939434B2 (en) 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
US6677242B1 (en) 2000-08-12 2004-01-13 Applied Materials Inc. Integrated shallow trench isolation approach
US6800830B2 (en) 2000-08-18 2004-10-05 Hitachi Kokusai Electric, Inc. Chemistry for boron diffusion barrier layer and method of application in semiconductor device fabrication
US6412437B1 (en) 2000-08-18 2002-07-02 Micron Technology, Inc. Plasma enhanced chemical vapor deposition reactor and plasma enhanced chemical vapor deposition process
US6446572B1 (en) 2000-08-18 2002-09-10 Tokyo Electron Limited Embedded plasma source for plasma density improvement
US6335288B1 (en) 2000-08-24 2002-01-01 Applied Materials, Inc. Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD
US6459066B1 (en) 2000-08-25 2002-10-01 Board Of Regents, The University Of Texas System Transmission line based inductively coupled plasma source with stable impedance
US6372657B1 (en) 2000-08-31 2002-04-16 Micron Technology, Inc. Method for selective etching of oxides
JP2002075972A (ja) 2000-09-04 2002-03-15 Hitachi Ltd 半導体装置の製造方法
JP4484345B2 (ja) 2000-09-11 2010-06-16 東京エレクトロン株式会社 半導体装置及びその製造方法
US6465366B1 (en) 2000-09-12 2002-10-15 Applied Materials, Inc. Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers
JP4717295B2 (ja) 2000-10-04 2011-07-06 株式会社半導体エネルギー研究所 ドライエッチング装置及びエッチング方法
US6461974B1 (en) 2000-10-06 2002-10-08 Lam Research Corporation High temperature tungsten etching process
DK200001497A (da) 2000-10-08 2002-04-09 Scanavo As Opbevaringsindretning for en databærer
JP2002115068A (ja) 2000-10-11 2002-04-19 Applied Materials Inc シャワーヘッド、基板処理装置および基板製造方法
KR100375102B1 (ko) 2000-10-18 2003-03-08 삼성전자주식회사 반도체 장치의 제조에서 화학 기상 증착 방법 및 이를수행하기 위한 장치
US6403491B1 (en) 2000-11-01 2002-06-11 Applied Materials, Inc. Etch method using a dielectric etch chamber with expanded process window
US6610362B1 (en) 2000-11-20 2003-08-26 Intel Corporation Method of forming a carbon doped oxide layer on a substrate
KR100382725B1 (ko) 2000-11-24 2003-05-09 삼성전자주식회사 클러스터화된 플라즈마 장치에서의 반도체소자의 제조방법
AUPR179500A0 (en) 2000-11-30 2000-12-21 Saintech Pty Limited Ion source
US6291348B1 (en) 2000-11-30 2001-09-18 Advanced Micro Devices, Inc. Method of forming Cu-Ca-O thin films on Cu surfaces in a chemical solution and semiconductor device thereby formed
US6544340B2 (en) 2000-12-08 2003-04-08 Applied Materials, Inc. Heater with detachable ceramic top plate
US6448537B1 (en) 2000-12-11 2002-09-10 Eric Anton Nering Single-wafer process chamber thermal convection processes
US6692903B2 (en) 2000-12-13 2004-02-17 Applied Materials, Inc Substrate cleaning apparatus and method
US6461972B1 (en) 2000-12-22 2002-10-08 Lsi Logic Corporation Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow
US6537429B2 (en) 2000-12-29 2003-03-25 Lam Research Corporation Diamond coatings on reactor wall and method of manufacturing thereof
US6533910B2 (en) 2000-12-29 2003-03-18 Lam Research Corporation Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof
US20020124867A1 (en) 2001-01-08 2002-09-12 Apl Co., Ltd. Apparatus and method for surface cleaning using plasma
US6500772B2 (en) 2001-01-08 2002-12-31 International Business Machines Corporation Methods and materials for depositing films on semiconductor substrates
FR2819341B1 (fr) 2001-01-11 2003-06-27 St Microelectronics Sa Procede d'integration d'une cellule dram
US6879981B2 (en) 2001-01-16 2005-04-12 Corigin Ltd. Sharing live data with a non cooperative DBMS
US6849854B2 (en) 2001-01-18 2005-02-01 Saintech Pty Ltd. Ion source
US6358827B1 (en) 2001-01-19 2002-03-19 Taiwan Semiconductor Manufacturing Company Method of forming a squared-off, vertically oriented polysilicon spacer gate
JP4644943B2 (ja) 2001-01-23 2011-03-09 東京エレクトロン株式会社 処理装置
US6743732B1 (en) 2001-01-26 2004-06-01 Taiwan Semiconductor Manufacturing Company Organic low K dielectric etch with NH3 chemistry
US6893969B2 (en) 2001-02-12 2005-05-17 Lam Research Corporation Use of ammonia for etching organic low-k dielectrics
US6537733B2 (en) 2001-02-23 2003-03-25 Applied Materials, Inc. Method of depositing low dielectric constant silicon carbide layers
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
JP4657473B2 (ja) 2001-03-06 2011-03-23 東京エレクトロン株式会社 プラズマ処理装置
US6348407B1 (en) 2001-03-15 2002-02-19 Chartered Semiconductor Manufacturing Inc. Method to improve adhesion of organic dielectrics in dual damascene interconnects
KR100423953B1 (ko) 2001-03-19 2004-03-24 디지웨이브 테크놀러지스 주식회사 화학기상증착장치
CN1302152C (zh) 2001-03-19 2007-02-28 株式会社Ips 化学气相沉积设备
JP5013353B2 (ja) 2001-03-28 2012-08-29 隆 杉野 成膜方法及び成膜装置
US20020177321A1 (en) 2001-03-30 2002-11-28 Li Si Yi Plasma etching of silicon carbide
US6670278B2 (en) 2001-03-30 2003-12-30 Lam Research Corporation Method of plasma etching of silicon carbide
US7084070B1 (en) 2001-03-30 2006-08-01 Lam Research Corporation Treatment for corrosion in substrate processing
FR2823032B1 (fr) 2001-04-03 2003-07-11 St Microelectronics Sa Resonateur electromecanique a poutre vibrante
US20020144657A1 (en) 2001-04-05 2002-10-10 Chiang Tony P. ALD reactor employing electrostatic chuck
JP3707394B2 (ja) 2001-04-06 2005-10-19 ソニー株式会社 無電解メッキ方法
US6761796B2 (en) 2001-04-06 2004-07-13 Axcelis Technologies, Inc. Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing
CN1304643C (zh) 2001-04-20 2007-03-14 克里斯铝轧制品有限公司 镀覆和预处理铝件方法
JP2002319571A (ja) 2001-04-20 2002-10-31 Kawasaki Microelectronics Kk エッチング槽の前処理方法及び半導体装置の製造方法
US20030019428A1 (en) 2001-04-28 2003-01-30 Applied Materials, Inc. Chemical vapor deposition chamber
WO2002089531A1 (en) 2001-04-30 2002-11-07 Lam Research, Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
US6914009B2 (en) 2001-05-07 2005-07-05 Applied Materials Inc Method of making small transistor lengths
US6740601B2 (en) 2001-05-11 2004-05-25 Applied Materials Inc. HDP-CVD deposition process for filling high aspect ratio gaps
DE10222083B4 (de) 2001-05-18 2010-09-23 Samsung Electronics Co., Ltd., Suwon Isolationsverfahren für eine Halbleitervorrichtung
US20020170678A1 (en) 2001-05-18 2002-11-21 Toshio Hayashi Plasma processing apparatus
US6717189B2 (en) 2001-06-01 2004-04-06 Ebara Corporation Electroless plating liquid and semiconductor device
US6573606B2 (en) 2001-06-14 2003-06-03 International Business Machines Corporation Chip to wiring interface with single metal alloy layer applied to surface of copper interconnect
US6506291B2 (en) 2001-06-14 2003-01-14 Applied Materials, Inc. Substrate support with multilevel heat transfer mechanism
CN1516895A (zh) 2001-06-14 2004-07-28 马特森技术公司 用于铜互连的阻挡层增强工艺
US20060191637A1 (en) 2001-06-21 2006-08-31 John Zajac Etching Apparatus and Process with Thickness and Uniformity Control
US6685803B2 (en) 2001-06-22 2004-02-03 Applied Materials, Inc. Plasma treatment of processing gases
US6770166B1 (en) 2001-06-29 2004-08-03 Lam Research Corp. Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor
US20030000647A1 (en) 2001-06-29 2003-01-02 Applied Materials, Inc. Substrate processing chamber
US6596599B1 (en) 2001-07-16 2003-07-22 Taiwan Semiconductor Manufacturing Company Gate stack for high performance sub-micron CMOS devices
KR100400044B1 (ko) 2001-07-16 2003-09-29 삼성전자주식회사 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드
US20030029715A1 (en) 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
US6846745B1 (en) 2001-08-03 2005-01-25 Novellus Systems, Inc. High-density plasma process for filling high aspect ratio structures
US6596654B1 (en) 2001-08-24 2003-07-22 Novellus Systems, Inc. Gap fill for high aspect ratio structures
JP3914452B2 (ja) 2001-08-07 2007-05-16 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
US6984288B2 (en) 2001-08-08 2006-01-10 Lam Research Corporation Plasma processor in plasma confinement region within a vacuum chamber
US7179556B2 (en) 2001-08-10 2007-02-20 Denso Corporation Fuel cell system
EP1418619A4 (en) 2001-08-13 2010-09-08 Ebara Corp SEMICONDUCTOR COMPONENTS AND MANUFACTURING METHOD THEREFOR AND PLATING SOLUTION
US20030038305A1 (en) 2001-08-21 2003-02-27 Wasshuber Christoph A. Method for manufacturing and structure of transistor with low-k spacer
US6762127B2 (en) 2001-08-23 2004-07-13 Yves Pierre Boiteux Etch process for dielectric materials comprising oxidized organo silane materials
US6753506B2 (en) 2001-08-23 2004-06-22 Axcelis Technologies System and method of fast ambient switching for rapid thermal processing
US20030129106A1 (en) 2001-08-29 2003-07-10 Applied Materials, Inc. Semiconductor processing using an efficiently coupled gas source
CN100462475C (zh) 2001-08-29 2009-02-18 东京电子株式会社 用于等离子处理的装置和方法
US6796314B1 (en) 2001-09-07 2004-09-28 Novellus Systems, Inc. Using hydrogen gas in a post-etch radio frequency-plasma contact cleaning process
KR100441297B1 (ko) 2001-09-14 2004-07-23 주성엔지니어링(주) 리모트 플라즈마를 이용하는 ｃｃｐ형 ｐｅｃｖｄ장치
US20030054608A1 (en) 2001-09-17 2003-03-20 Vanguard International Semiconductor Corporation Method for forming shallow trench isolation in semiconductor device
US6555467B2 (en) 2001-09-28 2003-04-29 Sharp Laboratories Of America, Inc. Method of making air gaps copper interconnect
US6462372B1 (en) 2001-10-09 2002-10-08 Silicon-Based Technology Corp. Scaled stack-gate flash memory device
US6656837B2 (en) 2001-10-11 2003-12-02 Applied Materials, Inc. Method of eliminating photoresist poisoning in damascene applications
AU2002301252B2 (en) 2001-10-12 2007-12-20 Bayer Aktiengesellschaft Photovoltaic modules with a thermoplastic hot-melt adhesive layer and a process for their production
US6855906B2 (en) 2001-10-16 2005-02-15 Adam Alexander Brailove Induction plasma reactor
US20030072639A1 (en) 2001-10-17 2003-04-17 Applied Materials, Inc. Substrate support
KR100433091B1 (ko) 2001-10-23 2004-05-28 주식회사 하이닉스반도체 반도체소자의 도전배선 형성방법
JP3759895B2 (ja) 2001-10-24 2006-03-29 松下電器産業株式会社 エッチング方法
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US20080102203A1 (en) 2001-10-26 2008-05-01 Dien-Yeh Wu Vortex chamber lids for atomic layer deposition
US20030087488A1 (en) 2001-11-07 2003-05-08 Tokyo Electron Limited Inductively coupled plasma source for improved process uniformity
JP4040284B2 (ja) 2001-11-08 2008-01-30 住友大阪セメント株式会社 プラズマ発生用電極内蔵型サセプタ及びその製造方法
JP2003158080A (ja) 2001-11-22 2003-05-30 Mitsubishi Electric Corp 半導体製造装置、半導体製造装置における堆積物除去方法、および半導体装置の製造方法
KR100443121B1 (ko) 2001-11-29 2004-08-04 삼성전자주식회사 반도체 공정의 수행 방법 및 반도체 공정 장치
US6794290B1 (en) 2001-12-03 2004-09-21 Novellus Systems, Inc. Method of chemical modification of structure topography
US7017514B1 (en) 2001-12-03 2006-03-28 Novellus Systems, Inc. Method and apparatus for plasma optimization in water processing
JP4392852B2 (ja) 2001-12-07 2010-01-06 東京エレクトロン株式会社 プラズマ処理装置に用いられる排気リング機構及びプラズマ処理装置
EP1453083A4 (en) 2001-12-07 2007-01-10 Tokyo Electron Ltd INSULATING FILM NITRIDING PROCESS, SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME, AND SURFACE TREATING DEVICE AND METHOD
US6905968B2 (en) 2001-12-12 2005-06-14 Applied Materials, Inc. Process for selectively etching dielectric layers
TWI303851B (en) 2001-12-13 2008-12-01 Applied Materials Inc Self-aligned contact etch with high sensitivity to nitride shoulder
US6890850B2 (en) 2001-12-14 2005-05-10 Applied Materials, Inc. Method of depositing dielectric materials in damascene applications
US6605874B2 (en) 2001-12-19 2003-08-12 Intel Corporation Method of making semiconductor device using an interconnect
AU2002366943A1 (en) 2001-12-20 2003-07-09 Tokyo Electron Limited Method and apparatus comprising a magnetic filter for plasma processing a workpiece
US20030116439A1 (en) 2001-12-21 2003-06-26 International Business Machines Corporation Method for forming encapsulated metal interconnect structures in semiconductor integrated circuit devices
US20030116087A1 (en) 2001-12-21 2003-06-26 Nguyen Anh N. Chamber hardware design for titanium nitride atomic layer deposition
JP2003197615A (ja) 2001-12-26 2003-07-11 Tokyo Electron Ltd プラズマ処理装置およびそのクリーニング方法
KR100442167B1 (ko) 2001-12-26 2004-07-30 주성엔지니어링(주) 자연산화막 제거방법
KR100484258B1 (ko) 2001-12-27 2005-04-22 주식회사 하이닉스반도체 반도체 소자 제조 방법
US20030124842A1 (en) 2001-12-27 2003-07-03 Applied Materials, Inc. Dual-gas delivery system for chemical vapor deposition processes
US6828241B2 (en) 2002-01-07 2004-12-07 Applied Materials, Inc. Efficient cleaning by secondary in-situ activation of etch precursor from remote plasma source
US6942929B2 (en) 2002-01-08 2005-09-13 Nianci Han Process chamber having component with yttrium-aluminum coating
US6827815B2 (en) 2002-01-15 2004-12-07 Applied Materials, Inc. Showerhead assembly for a processing chamber
US6730175B2 (en) 2002-01-22 2004-05-04 Applied Materials, Inc. Ceramic substrate support
US6869880B2 (en) 2002-01-24 2005-03-22 Applied Materials, Inc. In situ application of etch back for improved deposition into high-aspect-ratio features
US20040060514A1 (en) 2002-01-25 2004-04-01 Applied Materials, Inc. A Delaware Corporation Gas distribution showerhead
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6866746B2 (en) 2002-01-26 2005-03-15 Applied Materials, Inc. Clamshell and small volume chamber with fixed substrate support
US7138014B2 (en) 2002-01-28 2006-11-21 Applied Materials, Inc. Electroless deposition apparatus
TWI239794B (en) 2002-01-30 2005-09-11 Alps Electric Co Ltd Plasma processing apparatus and method
US7226504B2 (en) 2002-01-31 2007-06-05 Sharp Laboratories Of America, Inc. Method to form thick relaxed SiGe layer with trench structure
US6632325B2 (en) 2002-02-07 2003-10-14 Applied Materials, Inc. Article for use in a semiconductor processing chamber and method of fabricating same
US7048814B2 (en) 2002-02-08 2006-05-23 Applied Materials, Inc. Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus
US7033447B2 (en) 2002-02-08 2006-04-25 Applied Materials, Inc. Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus
US20080213496A1 (en) 2002-02-14 2008-09-04 Applied Materials, Inc. Method of coating semiconductor processing apparatus with protective yttrium-containing coatings
US6821348B2 (en) 2002-02-14 2004-11-23 3M Innovative Properties Company In-line deposition processes for circuit fabrication
US7479304B2 (en) 2002-02-14 2009-01-20 Applied Materials, Inc. Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate
US6656848B1 (en) 2002-02-22 2003-12-02 Scientific Systems Research Limited Plasma chamber conditioning
JP3921234B2 (ja) 2002-02-28 2007-05-30 キヤノンアネルバ株式会社 表面処理装置及びその製造方法
US6677167B2 (en) 2002-03-04 2004-01-13 Hitachi High-Technologies Corporation Wafer processing apparatus and a wafer stage and a wafer processing method
US6646233B2 (en) 2002-03-05 2003-11-11 Hitachi High-Technologies Corporation Wafer stage for wafer processing apparatus and wafer processing method
US20060252265A1 (en) 2002-03-06 2006-11-09 Guangxiang Jin Etching high-kappa dielectric materials with good high-kappa foot control and silicon recess control
US20030168174A1 (en) 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system
US7252011B2 (en) 2002-03-11 2007-08-07 Mks Instruments, Inc. Surface area deposition trap
JP3813562B2 (ja) 2002-03-15 2006-08-23 富士通株式会社 半導体装置及びその製造方法
US7256370B2 (en) 2002-03-15 2007-08-14 Steed Technology, Inc. Vacuum thermal annealer
US20040003828A1 (en) 2002-03-21 2004-01-08 Jackson David P. Precision surface treatments using dense fluids and a plasma
US6913651B2 (en) 2002-03-22 2005-07-05 Blue29, Llc Apparatus and method for electroless deposition of materials on semiconductor substrates
US6883733B1 (en) 2002-03-28 2005-04-26 Novellus Systems, Inc. Tapered post, showerhead design to improve mixing on dual plenum showerheads
US6541397B1 (en) 2002-03-29 2003-04-01 Applied Materials, Inc. Removable amorphous carbon CMP stop
US6843858B2 (en) 2002-04-02 2005-01-18 Applied Materials, Inc. Method of cleaning a semiconductor processing chamber
US20030190426A1 (en) 2002-04-03 2003-10-09 Deenesh Padhi Electroless deposition method
US6921556B2 (en) 2002-04-12 2005-07-26 Asm Japan K.K. Method of film deposition using single-wafer-processing type CVD
US6616967B1 (en) 2002-04-15 2003-09-09 Texas Instruments Incorporated Method to achieve continuous hydrogen saturation in sparingly used electroless nickel plating process
US6897532B1 (en) 2002-04-15 2005-05-24 Cypress Semiconductor Corp. Magnetic tunneling junction configuration and a method for making the same
US7013834B2 (en) 2002-04-19 2006-03-21 Nordson Corporation Plasma treatment system
US6818562B2 (en) 2002-04-19 2004-11-16 Applied Materials Inc Method and apparatus for tuning an RF matching network in a plasma enhanced semiconductor wafer processing system
JP3773189B2 (ja) 2002-04-24 2006-05-10 独立行政法人科学技術振興機構 窓型プローブ、プラズマ監視装置、及び、プラズマ処理装置
KR100448714B1 (ko) 2002-04-24 2004-09-13 삼성전자주식회사 다층 나노라미네이트 구조를 갖는 반도체 장치의 절연막및 그의 형성방법
US6794889B2 (en) 2002-04-26 2004-09-21 Agilent Technologies, Inc. Unified apparatus and method to assure probe card-to-wafer parallelism in semiconductor automatic wafer test, probe card measurement systems, and probe card manufacturing
US6528409B1 (en) 2002-04-29 2003-03-04 Advanced Micro Devices, Inc. Interconnect structure formed in porous dielectric material with minimized degradation and electromigration
US6908862B2 (en) 2002-05-03 2005-06-21 Applied Materials, Inc. HDP-CVD dep/etch/dep process for improved deposition into high aspect ratio features
JP2003324072A (ja) 2002-05-07 2003-11-14 Nec Electronics Corp 半導体製造装置
US20030215570A1 (en) 2002-05-16 2003-11-20 Applied Materials, Inc. Deposition of silicon nitride
TW538497B (en) 2002-05-16 2003-06-21 Nanya Technology Corp Method to form a bottle-shaped trench
US6825051B2 (en) 2002-05-17 2004-11-30 Asm America, Inc. Plasma etch resistant coating and process
JP2003338491A (ja) 2002-05-21 2003-11-28 Mitsubishi Electric Corp プラズマ処理装置および半導体装置の製造方法
US6500728B1 (en) 2002-05-24 2002-12-31 Taiwan Semiconductor Manufacturing Company Shallow trench isolation (STI) module to improve contact etch process window
US6673200B1 (en) 2002-05-30 2004-01-06 Lsi Logic Corporation Method of reducing process plasma damage using optical spectroscopy
US20030224217A1 (en) 2002-05-31 2003-12-04 Applied Materials, Inc. Metal nitride formation
KR100434110B1 (ko) 2002-06-04 2004-06-04 삼성전자주식회사 반도체 장치의 제조방법
US20030230385A1 (en) 2002-06-13 2003-12-18 Applied Materials, Inc. Electro-magnetic configuration for uniformity enhancement in a dual chamber plasma processing system
CA2489544A1 (en) 2002-06-14 2003-12-24 Sekisui Chemical Co., Ltd. Oxide film forming method and oxide film forming apparatus
US6924191B2 (en) 2002-06-20 2005-08-02 Applied Materials, Inc. Method for fabricating a gate structure of a field effect transistor
US7311797B2 (en) 2002-06-27 2007-12-25 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
DE10229037A1 (de) 2002-06-28 2004-01-29 Robert Bosch Gmbh Vorrichtung und Verfahren zur Erzeugung von Chlortrifluorid und Anlage zur Ätzung von Halbleitersubstraten mit dieser Vorrichtung
US20040072446A1 (en) 2002-07-02 2004-04-15 Applied Materials, Inc. Method for fabricating an ultra shallow junction of a field effect transistor
US6767844B2 (en) 2002-07-03 2004-07-27 Taiwan Semiconductor Manufacturing Co., Ltd Plasma chamber equipped with temperature-controlled focus ring and method of operating
US6838125B2 (en) 2002-07-10 2005-01-04 Applied Materials, Inc. Method of film deposition using activated precursor gases
US7357138B2 (en) 2002-07-18 2008-04-15 Air Products And Chemicals, Inc. Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
US7988398B2 (en) 2002-07-22 2011-08-02 Brooks Automation, Inc. Linear substrate transport apparatus
US6818561B1 (en) 2002-07-30 2004-11-16 Advanced Micro Devices, Inc. Control methodology using optical emission spectroscopy derived data, system for performing same
WO2004013661A2 (en) 2002-08-02 2004-02-12 E.A. Fischione Instruments, Inc. Methods and apparatus for preparing specimens for microscopy
US20060040055A1 (en) 2002-08-06 2006-02-23 Tegal Corporation Method and system for sequential processing in a two-compartment chamber
US20060046412A1 (en) 2002-08-06 2006-03-02 Tegal Corporation Method and system for sequential processing in a two-compartment chamber
US6921555B2 (en) 2002-08-06 2005-07-26 Tegal Corporation Method and system for sequential processing in a two-compartment chamber
US20040058293A1 (en) 2002-08-06 2004-03-25 Tue Nguyen Assembly line processing system
JP3861036B2 (ja) 2002-08-09 2006-12-20 三菱重工業株式会社 プラズマｃｖｄ装置
US7541270B2 (en) 2002-08-13 2009-06-02 Micron Technology, Inc. Methods for forming openings in doped silicon dioxide
US20040033677A1 (en) 2002-08-14 2004-02-19 Reza Arghavani Method and apparatus to prevent lateral oxidation in a transistor utilizing an ultra thin oxygen-diffusion barrier
US7192486B2 (en) 2002-08-15 2007-03-20 Applied Materials, Inc. Clog-resistant gas delivery system
US6781173B2 (en) 2002-08-29 2004-08-24 Micron Technology, Inc. MRAM sense layer area control
US6946033B2 (en) 2002-09-16 2005-09-20 Applied Materials Inc. Heated gas distribution plate for a processing chamber
JP3991315B2 (ja) 2002-09-17 2007-10-17 キヤノンアネルバ株式会社 薄膜形成装置及び方法
JP3832409B2 (ja) 2002-09-18 2006-10-11 住友電気工業株式会社 ウエハー保持体及び半導体製造装置
US7335609B2 (en) 2004-08-27 2008-02-26 Applied Materials, Inc. Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials
JP4260450B2 (ja) 2002-09-20 2009-04-30 東京エレクトロン株式会社 真空処理装置における静電チャックの製造方法
US7166200B2 (en) 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US20070051471A1 (en) 2002-10-04 2007-03-08 Applied Materials, Inc. Methods and apparatus for stripping
KR100500852B1 (ko) 2002-10-10 2005-07-12 최대규 원격 플라즈마 발생기
US6991959B2 (en) 2002-10-10 2006-01-31 Asm Japan K.K. Method of manufacturing silicon carbide film
JP4606713B2 (ja) 2002-10-17 2011-01-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US6699380B1 (en) 2002-10-18 2004-03-02 Applied Materials Inc. Modular electrochemical processing system
TW587139B (en) 2002-10-18 2004-05-11 Winbond Electronics Corp Gas distribution system and method for the plasma gas in the chamber
US6802944B2 (en) 2002-10-23 2004-10-12 Applied Materials, Inc. High density plasma CVD process for gapfill into high aspect ratio features
US7628897B2 (en) 2002-10-23 2009-12-08 Applied Materials, Inc. Reactive ion etching for semiconductor device feature topography modification
US6853043B2 (en) 2002-11-04 2005-02-08 Applied Materials, Inc. Nitrogen-free antireflective coating for use with photolithographic patterning
JP2004165317A (ja) 2002-11-12 2004-06-10 Renesas Technology Corp 半導体装置およびその製造方法
EP1420080A3 (en) 2002-11-14 2005-11-09 Applied Materials, Inc. Apparatus and method for hybrid chemical deposition processes
KR100862658B1 (ko) 2002-11-15 2008-10-10 삼성전자주식회사 반도체 처리 시스템의 가스 주입 장치
US6861332B2 (en) 2002-11-21 2005-03-01 Intel Corporation Air gap interconnect method
US6902628B2 (en) 2002-11-25 2005-06-07 Applied Materials, Inc. Method of cleaning a coated process chamber component
US6713873B1 (en) 2002-11-27 2004-03-30 Intel Corporation Adhesion between dielectric materials
JP2004179426A (ja) 2002-11-27 2004-06-24 Tokyo Electron Ltd 基板処理装置のクリーニング方法
TW561068B (en) 2002-11-29 2003-11-11 Au Optronics Corp Nozzle head with excellent corrosion resistance for dry etching process and anti-corrosion method thereof
US7347901B2 (en) 2002-11-29 2008-03-25 Tokyo Electron Limited Thermally zoned substrate holder assembly
US7396773B1 (en) 2002-12-06 2008-07-08 Cypress Semiconductor Company Method for cleaning a gate stack
DE10260352A1 (de) 2002-12-20 2004-07-15 Infineon Technologies Ag Verfahren zum Herstellen einer Kondensatoranordnung und Kondensatoranordnung
US20040118519A1 (en) 2002-12-20 2004-06-24 Applied Materials, Inc. Blocker plate bypass design to improve clean rate at the edge of the chamber
US20040118344A1 (en) 2002-12-20 2004-06-24 Lam Research Corporation System and method for controlling plasma with an adjustable coupling to ground circuit
US6806949B2 (en) 2002-12-31 2004-10-19 Tokyo Electron Limited Monitoring material buildup on system components by optical emission
KR100964398B1 (ko) 2003-01-03 2010-06-17 삼성전자주식회사 유도결합형 안테나 및 이를 채용한 플라즈마 처리장치
US6720213B1 (en) 2003-01-15 2004-04-13 International Business Machines Corporation Low-K gate spacers by fluorine implantation
US6808748B2 (en) 2003-01-23 2004-10-26 Applied Materials, Inc. Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology
US7500445B2 (en) 2003-01-27 2009-03-10 Applied Materials, Inc. Method and apparatus for cleaning a CVD chamber
US7316761B2 (en) 2003-02-03 2008-01-08 Applied Materials, Inc. Apparatus for uniformly etching a dielectric layer
US7205248B2 (en) 2003-02-04 2007-04-17 Micron Technology, Inc. Method of eliminating residual carbon from flowable oxide fill
US7078351B2 (en) 2003-02-10 2006-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist intensive patterning and processing
JP4673290B2 (ja) 2003-02-14 2011-04-20 アプライド マテリアルズ インコーポレイテッド 水素含有ラジカルによる未変性酸化物の洗浄
US20060137613A1 (en) 2004-01-27 2006-06-29 Shigeru Kasai Plasma generating apparatus, plasma generating method and remote plasma processing apparatus
US6982175B2 (en) 2003-02-14 2006-01-03 Unaxis Usa Inc. End point detection in time division multiplexed etch processes
US20040195208A1 (en) 2003-02-15 2004-10-07 Pavel Elizabeth G. Method and apparatus for performing hydrogen optical emission endpoint detection for photoresist strip and residue removal
US6969619B1 (en) 2003-02-18 2005-11-29 Novellus Systems, Inc. Full spectrum endpoint detection
JP4387355B2 (ja) 2003-02-19 2009-12-16 パナソニック株式会社 不純物導入方法
US20040163590A1 (en) 2003-02-24 2004-08-26 Applied Materials, Inc. In-situ health check of liquid injection vaporizer
US7212078B2 (en) 2003-02-25 2007-05-01 Tokyo Electron Limited Method and assembly for providing impedance matching network and network assembly
US20040163601A1 (en) 2003-02-26 2004-08-26 Masanori Kadotani Plasma processing apparatus
DE10308870B4 (de) 2003-02-28 2006-07-27 Austriamicrosystems Ag Bipolartransistor mit verbessertem Basis-Emitter-Übergang und Verfahren zur Herstellung
US6913992B2 (en) 2003-03-07 2005-07-05 Applied Materials, Inc. Method of modifying interlayer adhesion
KR100752800B1 (ko) 2003-03-12 2007-08-29 동경 엘렉트론 주식회사 반도체처리용의 기판유지구조 및 플라즈마 처리장치
US6951821B2 (en) 2003-03-17 2005-10-04 Tokyo Electron Limited Processing system and method for chemically treating a substrate
US20040182315A1 (en) 2003-03-17 2004-09-23 Tokyo Electron Limited Reduced maintenance chemical oxide removal (COR) processing system
JP2004296467A (ja) 2003-03-25 2004-10-21 Hitachi Kokusai Electric Inc 基板処理装置
US20040187787A1 (en) 2003-03-31 2004-09-30 Dawson Keith E. Substrate support having temperature controlled substrate support surface
US6844929B2 (en) 2003-04-09 2005-01-18 Phase Shift Technology Apparatus and method for holding and transporting thin opaque plates
US7037376B2 (en) 2003-04-11 2006-05-02 Applied Materials Inc. Backflush chamber clean
WO2004093178A1 (ja) 2003-04-11 2004-10-28 Hoya Corporation クロム系薄膜のエッチング方法及びフォトマスクの製造方法
US7126225B2 (en) 2003-04-15 2006-10-24 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for manufacturing a semiconductor wafer with reduced delamination and peeling
US6942753B2 (en) 2003-04-16 2005-09-13 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
US6872909B2 (en) 2003-04-16 2005-03-29 Applied Science And Technology, Inc. Toroidal low-field reactive gas and plasma source having a dielectric vacuum vessel
TWI227565B (en) 2003-04-16 2005-02-01 Au Optronics Corp Low temperature poly-Si thin film transistor and method of manufacturing the same
JP5404984B2 (ja) 2003-04-24 2014-02-05 東京エレクトロン株式会社 プラズマモニタリング方法、プラズマモニタリング装置及びプラズマ処理装置
US20040211357A1 (en) 2003-04-24 2004-10-28 Gadgil Pradad N. Method of manufacturing a gap-filled structure of a semiconductor device
US6830624B2 (en) 2003-05-02 2004-12-14 Applied Materials, Inc. Blocker plate by-pass for remote plasma clean
US7008877B2 (en) 2003-05-05 2006-03-07 Unaxis Usa Inc. Etching of chromium layers on photomasks utilizing high density plasma and low frequency RF bias
US6903511B2 (en) 2003-05-06 2005-06-07 Zond, Inc. Generation of uniformly-distributed plasma
DE10320472A1 (de) 2003-05-08 2004-12-02 Kolektor D.O.O. Plasmabehandlung zur Reinigung von Kupfer oder Nickel
US7045020B2 (en) 2003-05-22 2006-05-16 Applied Materials, Inc. Cleaning a component of a process chamber
US8580076B2 (en) 2003-05-22 2013-11-12 Lam Research Corporation Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith
KR100965758B1 (ko) 2003-05-22 2010-06-24 주성엔지니어링(주) 액정표시장치용 플라즈마 강화 화학기상증착 장치의샤워헤드 어셈블리
US6713835B1 (en) 2003-05-22 2004-03-30 International Business Machines Corporation Method for manufacturing a multi-level interconnect structure
US7543546B2 (en) 2003-05-27 2009-06-09 Matsushita Electric Works, Ltd. Plasma processing apparatus, method for producing reaction vessel for plasma generation, and plasma processing method
US20040237897A1 (en) 2003-05-27 2004-12-02 Hiroji Hanawa High-Frequency electrostatically shielded toroidal plasma and radical source
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7067432B2 (en) 2003-06-26 2006-06-27 Applied Materials, Inc. Methodology for in-situ and real-time chamber condition monitoring and process recovery during plasma processing
KR100853388B1 (ko) 2003-06-27 2008-08-21 도쿄엘렉트론가부시키가이샤 클리닝 방법 및 기판 처리 방법
US7151277B2 (en) 2003-07-03 2006-12-19 The Regents Of The University Of California Selective etching of silicon carbide films
JP4245996B2 (ja) 2003-07-07 2009-04-02 株式会社荏原製作所 無電解めっきによるキャップ膜の形成方法およびこれに用いる装置
US7368392B2 (en) 2003-07-10 2008-05-06 Applied Materials, Inc. Method of fabricating a gate structure of a field effect transistor having a metal-containing gate electrode
US6995073B2 (en) 2003-07-16 2006-02-07 Intel Corporation Air gap integration
JP3866694B2 (ja) 2003-07-30 2007-01-10 株式会社日立ハイテクノロジーズ Ｌｓｉデバイスのエッチング方法および装置
US7256134B2 (en) 2003-08-01 2007-08-14 Applied Materials, Inc. Selective etching of carbon-doped low-k dielectrics
JP4239750B2 (ja) 2003-08-13 2009-03-18 セイコーエプソン株式会社 マイクロレンズ及びマイクロレンズの製造方法、光学装置、光伝送装置、レーザプリンタ用ヘッド、並びにレーザプリンタ
US20050035455A1 (en) 2003-08-14 2005-02-17 Chenming Hu Device with low-k dielectric in close proximity thereto and its method of fabrication
US7182816B2 (en) 2003-08-18 2007-02-27 Tokyo Electron Limited Particulate reduction using temperature-controlled chamber shield
US7361865B2 (en) 2003-08-27 2008-04-22 Kyocera Corporation Heater for heating a wafer and method for fabricating the same
US7521000B2 (en) 2003-08-28 2009-04-21 Applied Materials, Inc. Process for etching photomasks
US6903031B2 (en) 2003-09-03 2005-06-07 Applied Materials, Inc. In-situ-etch-assisted HDP deposition using SiF4 and hydrogen
CN100495655C (zh) 2003-09-03 2009-06-03 东京毅力科创株式会社 气体处理装置和散热方法
US7282244B2 (en) 2003-09-05 2007-10-16 General Electric Company Replaceable plate expanded thermal plasma apparatus and method
KR100518594B1 (ko) 2003-09-09 2005-10-04 삼성전자주식회사 로컬 ｓｏｎｏｓ형 비휘발성 메모리 소자 및 그 제조방법
US7030034B2 (en) 2003-09-18 2006-04-18 Micron Technology, Inc. Methods of etching silicon nitride substantially selectively relative to an oxide of aluminum
US6967405B1 (en) 2003-09-24 2005-11-22 Yongsik Yu Film for copper diffusion barrier
JP2005101141A (ja) 2003-09-24 2005-04-14 Renesas Technology Corp 半導体集積回路装置およびその製造方法
US7071532B2 (en) 2003-09-30 2006-07-04 International Business Machines Corporation Adjustable self-aligned air gap dielectric for low capacitance wiring
US7371688B2 (en) 2003-09-30 2008-05-13 Air Products And Chemicals, Inc. Removal of transition metal ternary and/or quaternary barrier materials from a substrate
KR20030083663A (ko) 2003-10-04 2003-10-30 삼영플랜트주식회사 건설폐기물로부터 시멘트 페이스트 및 모르타르가 제거된재생골재 및 모래를 생산하는 방법 및 장치
JP4399227B2 (ja) 2003-10-06 2010-01-13 株式会社フジキン チャンバの内圧制御装置及び内圧被制御式チャンバ
US20050087517A1 (en) 2003-10-09 2005-04-28 Andrew Ott Adhesion between carbon doped oxide and etch stop layers
US7408225B2 (en) 2003-10-09 2008-08-05 Asm Japan K.K. Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms
US7581511B2 (en) 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
US7125792B2 (en) 2003-10-14 2006-10-24 Infineon Technologies Ag Dual damascene structure and method
US7465358B2 (en) 2003-10-15 2008-12-16 Applied Materials, Inc. Measurement techniques for controlling aspects of a electroless deposition process
US20070111519A1 (en) 2003-10-15 2007-05-17 Applied Materials, Inc. Integrated electroless deposition system
JP2005129666A (ja) 2003-10-22 2005-05-19 Canon Inc 処理方法及び装置
JP4306403B2 (ja) 2003-10-23 2009-08-05 東京エレクトロン株式会社 シャワーヘッド構造及びこれを用いた成膜装置
JP2005129688A (ja) 2003-10-23 2005-05-19 Hitachi Ltd 半導体装置の製造方法
US7053994B2 (en) 2003-10-28 2006-05-30 Lam Research Corporation Method and apparatus for etch endpoint detection
KR100561848B1 (ko) 2003-11-04 2006-03-16 삼성전자주식회사 헬리컬 공진기형 플라즈마 처리 장치
US7709392B2 (en) 2003-11-05 2010-05-04 Taiwan Semiconductor Manufacturing Co., Ltd. Low K dielectric surface damage control
JP4273932B2 (ja) 2003-11-07 2009-06-03 株式会社島津製作所 表面波励起プラズマｃｖｄ装置
US20050103267A1 (en) 2003-11-14 2005-05-19 Hur Gwang H. Flat panel display manufacturing apparatus
JP4256763B2 (ja) 2003-11-19 2009-04-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP4393844B2 (ja) 2003-11-19 2010-01-06 東京エレクトロン株式会社 プラズマ成膜装置及びプラズマ成膜方法
US20050145341A1 (en) 2003-11-19 2005-07-07 Masaki Suzuki Plasma processing apparatus
KR100558925B1 (ko) 2003-11-24 2006-03-10 세메스 주식회사 웨이퍼 에지 식각 장치
US20050109276A1 (en) 2003-11-25 2005-05-26 Applied Materials, Inc. Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber
US20050112876A1 (en) 2003-11-26 2005-05-26 Chih-Ta Wu Method to form a robust TiCI4 based CVD TiN film
US7431966B2 (en) 2003-12-09 2008-10-07 Micron Technology, Inc. Atomic layer deposition method of depositing an oxide on a substrate
US7081407B2 (en) 2003-12-16 2006-07-25 Lam Research Corporation Method of preventing damage to porous low-k materials during resist stripping
KR100546401B1 (ko) 2003-12-17 2006-01-26 삼성전자주식회사 자기정렬된 전하트랩층을 포함하는 반도체 메모리 소자 및그 제조방법
US7220497B2 (en) 2003-12-18 2007-05-22 Lam Research Corporation Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components
US6958286B2 (en) 2004-01-02 2005-10-25 International Business Machines Corporation Method of preventing surface roughening during hydrogen prebake of SiGe substrates
KR100447142B1 (ko) 2004-01-09 2004-09-04 에이엔 에스 주식회사 가스 분배 플레이트를 갖는 플레이트 샤워헤드 및 그를이용한 가스 확산 방법
US6893967B1 (en) 2004-01-13 2005-05-17 Advanced Micro Devices, Inc. L-shaped spacer incorporating or patterned using amorphous carbon or CVD organic materials
US6852584B1 (en) 2004-01-14 2005-02-08 Tokyo Electron Limited Method of trimming a gate electrode structure
WO2005072211A2 (en) 2004-01-20 2005-08-11 Mattson Technology, Inc. System and method for removal of photoresist and residues following contact etch with a stop layer present
US20060033678A1 (en) 2004-01-26 2006-02-16 Applied Materials, Inc. Integrated electroless deposition system
US7012027B2 (en) 2004-01-27 2006-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Zirconium oxide and hafnium oxide etching using halogen containing chemicals
US7064078B2 (en) 2004-01-30 2006-06-20 Applied Materials Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme
US7291550B2 (en) 2004-02-13 2007-11-06 Chartered Semiconductor Manufacturing Ltd. Method to form a contact hole
US7015415B2 (en) 2004-02-18 2006-03-21 Dry Plasma Systems, Inc. Higher power density downstream plasma
JP4707959B2 (ja) 2004-02-20 2011-06-22 日本エー・エス・エム株式会社 シャワープレート、プラズマ処理装置及びプラズマ処理方法
CN1669796B (zh) 2004-02-23 2012-05-23 周星工程股份有限公司 用于制造显示基板的装置及装配在其中的喷头组合
JP4698251B2 (ja) 2004-02-24 2011-06-08 アプライド マテリアルズ インコーポレイテッド 可動又は柔軟なシャワーヘッド取り付け
US20060051966A1 (en) 2004-02-26 2006-03-09 Applied Materials, Inc. In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
US7780793B2 (en) 2004-02-26 2010-08-24 Applied Materials, Inc. Passivation layer formation by plasma clean process to reduce native oxide growth
US20070123051A1 (en) 2004-02-26 2007-05-31 Reza Arghavani Oxide etch with nh4-nf3 chemistry
US20050230350A1 (en) 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US7407893B2 (en) 2004-03-05 2008-08-05 Applied Materials, Inc. Liquid precursors for the CVD deposition of amorphous carbon films
US8037896B2 (en) 2004-03-09 2011-10-18 Mks Instruments, Inc. Pressure regulation in remote zones
US7196342B2 (en) 2004-03-10 2007-03-27 Cymer, Inc. Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source
US20060081337A1 (en) 2004-03-12 2006-04-20 Shinji Himori Capacitive coupling plasma processing apparatus
US7682985B2 (en) 2004-03-17 2010-03-23 Lam Research Corporation Dual doped polysilicon and silicon germanium etch
US7109521B2 (en) 2004-03-18 2006-09-19 Cree, Inc. Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
US7582555B1 (en) 2005-12-29 2009-09-01 Novellus Systems, Inc. CVD flowable gap fill
US7291360B2 (en) 2004-03-26 2007-11-06 Applied Materials, Inc. Chemical vapor deposition plasma process using plural ion shower grids
US7695590B2 (en) 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US7244474B2 (en) 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US7697260B2 (en) 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
US7358192B2 (en) 2004-04-08 2008-04-15 Applied Materials, Inc. Method and apparatus for in-situ film stack processing
JP4761723B2 (ja) 2004-04-12 2011-08-31 日本碍子株式会社 基板加熱装置
US7273526B2 (en) 2004-04-15 2007-09-25 Asm Japan K.K. Thin-film deposition apparatus
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US7785672B2 (en) 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
US7018941B2 (en) 2004-04-21 2006-03-28 Applied Materials, Inc. Post treatment of low k dielectric films
JP3998003B2 (ja) 2004-04-23 2007-10-24 ソニー株式会社 プラズマエッチング法
TWI249774B (en) 2004-04-23 2006-02-21 Nanya Technology Corp Forming method of self-aligned contact for semiconductor device
US7115974B2 (en) 2004-04-27 2006-10-03 Taiwan Semiconductor Manfacturing Company, Ltd. Silicon oxycarbide and silicon carbonitride based materials for MOS devices
US20050238807A1 (en) 2004-04-27 2005-10-27 Applied Materials, Inc. Refurbishment of a coated chamber component
US7449220B2 (en) 2004-04-30 2008-11-11 Oc Oerlikon Blazers Ag Method for manufacturing a plate-shaped workpiece
US20050241579A1 (en) 2004-04-30 2005-11-03 Russell Kidd Face shield to improve uniformity of blanket CVD processes
US7708859B2 (en) * 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
KR20070009729A (ko) 2004-05-11 2007-01-18 어플라이드 머티어리얼스, 인코포레이티드 불화탄소 에칭 화학반응에서 Ｈ2 첨가를 이용한탄소-도핑-Ｓｉ 산화물 에칭
US8328939B2 (en) 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US8074599B2 (en) 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US7691686B2 (en) 2004-05-21 2010-04-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR100580584B1 (ko) 2004-05-21 2006-05-16 삼성전자주식회사 리모트 플라즈마 발생 튜브의 표면 세정 방법과 이를이용하는 기판 처리 방법 및 기판 처리 장치
US7049200B2 (en) 2004-05-25 2006-05-23 Applied Materials Inc. Method for forming a low thermal budget spacer
KR100624566B1 (ko) 2004-05-31 2006-09-19 주식회사 하이닉스반도체 커패시터 상부에 유동성 절연막을 갖는 반도체소자 및 그제조 방법
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
US7651583B2 (en) 2004-06-04 2010-01-26 Tokyo Electron Limited Processing system and method for treating a substrate
US20050274324A1 (en) 2004-06-04 2005-12-15 Tokyo Electron Limited Plasma processing apparatus and mounting unit thereof
US20050274396A1 (en) 2004-06-09 2005-12-15 Hong Shih Methods for wet cleaning quartz surfaces of components for plasma processing chambers
US7226852B1 (en) 2004-06-10 2007-06-05 Lam Research Corporation Preventing damage to low-k materials during resist stripping
US7430496B2 (en) 2004-06-16 2008-09-30 Tokyo Electron Limited Method and apparatus for using a pressure control system to monitor a plasma processing system
US7253107B2 (en) 2004-06-17 2007-08-07 Asm International N.V. Pressure control system
US7122949B2 (en) 2004-06-21 2006-10-17 Neocera, Inc. Cylindrical electron beam generating/triggering device and method for generation of electrons
US20050284573A1 (en) 2004-06-24 2005-12-29 Egley Fred D Bare aluminum baffles for resist stripping chambers
US7220687B2 (en) 2004-06-25 2007-05-22 Applied Materials, Inc. Method to improve water-barrier performance by changing film surface morphology
US20060005856A1 (en) 2004-06-29 2006-01-12 Applied Materials, Inc. Reduction of reactive gas attack on substrate heater
US9117860B2 (en) * 2006-08-30 2015-08-25 Lam Research Corporation Controlled ambient system for interface engineering
US8349128B2 (en) 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
US20060000802A1 (en) 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
US7097779B2 (en) 2004-07-06 2006-08-29 Tokyo Electron Limited Processing system and method for chemically treating a TERA layer
JP2006049817A (ja) 2004-07-07 2006-02-16 Showa Denko Kk プラズマ処理方法およびプラズマエッチング方法
CN101076614A (zh) 2004-07-07 2007-11-21 莫门蒂夫性能材料股份有限公司 基底上的保护涂层及其制备方法
US7845309B2 (en) 2004-07-13 2010-12-07 Nordson Corporation Ultra high speed uniform plasma processing system
KR100614648B1 (ko) 2004-07-15 2006-08-23 삼성전자주식회사 반도체 소자 제조에 사용되는 기판 처리 장치
KR100584485B1 (ko) 2004-07-20 2006-05-29 동부일렉트로닉스 주식회사 반도체 소자의 금속 부식 방지 방법
US7767561B2 (en) 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
US20060016783A1 (en) 2004-07-22 2006-01-26 Dingjun Wu Process for titanium nitride removal
JP4492947B2 (ja) 2004-07-23 2010-06-30 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4579611B2 (ja) 2004-07-26 2010-11-10 株式会社日立ハイテクノロジーズ ドライエッチング方法
US7217626B2 (en) 2004-07-26 2007-05-15 Texas Instruments Incorporated Transistor fabrication methods using dual sidewall spacers
US7381291B2 (en) 2004-07-29 2008-06-03 Asm Japan K.K. Dual-chamber plasma processing apparatus
US20060021703A1 (en) 2004-07-29 2006-02-02 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
JP4559202B2 (ja) * 2004-07-30 2010-10-06 東京エレクトロン株式会社 プラズマエッチング装置
US7806077B2 (en) 2004-07-30 2010-10-05 Amarante Technologies, Inc. Plasma nozzle array for providing uniform scalable microwave plasma generation
US7192863B2 (en) 2004-07-30 2007-03-20 Texas Instruments Incorporated Method of eliminating etch ridges in a dual damascene process
CN102154628B (zh) 2004-08-02 2014-05-07 维高仪器股份有限公司 用于化学气相沉积反应器的多气体分配喷射器
US20060024954A1 (en) 2004-08-02 2006-02-02 Zhen-Cheng Wu Copper damascene barrier and capping layer
JP4718141B2 (ja) 2004-08-06 2011-07-06 東京エレクトロン株式会社 薄膜形成方法及び薄膜形成装置
US20060032833A1 (en) 2004-08-10 2006-02-16 Applied Materials, Inc. Encapsulation of post-etch halogenic residue
US7247570B2 (en) 2004-08-19 2007-07-24 Micron Technology, Inc. Silicon pillars for vertical transistors
US20060043066A1 (en) 2004-08-26 2006-03-02 Kamp Thomas A Processes for pre-tapering silicon or silicon-germanium prior to etching shallow trenches
US20060042752A1 (en) 2004-08-30 2006-03-02 Rueger Neal R Plasma processing apparatuses and methods
CN102610481B (zh) 2004-09-01 2016-04-13 朗姆研究公司 用于增加光阻移除率之装置及等离子体灰化方法
US7115525B2 (en) 2004-09-02 2006-10-03 Micron Technology, Inc. Method for integrated circuit fabrication using pitch multiplication
US7329576B2 (en) 2004-09-02 2008-02-12 Micron Technology, Inc. Double-sided container capacitors using a sacrificial layer
JP2006108629A (ja) 2004-09-10 2006-04-20 Toshiba Corp 半導体装置の製造方法
US20060292846A1 (en) 2004-09-17 2006-12-28 Pinto Gustavo A Material management in substrate processing
JP4467453B2 (ja) 2004-09-30 2010-05-26 日本碍子株式会社 セラミックス部材及びその製造方法
US7268084B2 (en) 2004-09-30 2007-09-11 Tokyo Electron Limited Method for treating a substrate
US7138767B2 (en) 2004-09-30 2006-11-21 Tokyo Electron Limited Surface wave plasma processing system and method of using
US7544251B2 (en) 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
US7148155B1 (en) 2004-10-26 2006-12-12 Novellus Systems, Inc. Sequential deposition/anneal film densification method
US7053003B2 (en) 2004-10-27 2006-05-30 Lam Research Corporation Photoresist conditioning with hydrogen ramping
JP2006128485A (ja) 2004-10-29 2006-05-18 Asm Japan Kk 半導体処理装置
US20060093756A1 (en) 2004-11-03 2006-05-04 Nagarajan Rajagopalan High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric CVD films
US20060097397A1 (en) 2004-11-10 2006-05-11 Russell Stephen W Method for forming a dual layer, low resistance metallization during the formation of a semiconductor device
US7618515B2 (en) 2004-11-15 2009-11-17 Tokyo Electron Limited Focus ring, plasma etching apparatus and plasma etching method
EP1662546A1 (en) 2004-11-25 2006-05-31 The European Community, represented by the European Commission Inductively coupled plasma processing apparatus
US7722737B2 (en) 2004-11-29 2010-05-25 Applied Materials, Inc. Gas distribution system for improved transient phase deposition
US7052553B1 (en) 2004-12-01 2006-05-30 Lam Research Corporation Wet cleaning of electrostatic chucks
US7256121B2 (en) 2004-12-02 2007-08-14 Texas Instruments Incorporated Contact resistance reduction by new barrier stack process
FR2878913B1 (fr) 2004-12-03 2007-01-19 Cit Alcatel Controle des pressions partielles de gaz pour optimisation de procede
US20060118240A1 (en) 2004-12-03 2006-06-08 Applied Science And Technology, Inc. Methods and apparatus for downstream dissociation of gases
JP2006193822A (ja) 2004-12-16 2006-07-27 Sharp Corp めっき装置、めっき方法、半導体装置、及び半導体装置の製造方法
US20060130971A1 (en) 2004-12-21 2006-06-22 Applied Materials, Inc. Apparatus for generating plasma by RF power
JP2006179693A (ja) 2004-12-22 2006-07-06 Shin Etsu Chem Co Ltd ヒータ付き静電チャック
JP4191137B2 (ja) 2004-12-24 2008-12-03 東京エレクトロン株式会社 基板処理装置のクリーニング方法
US7365016B2 (en) 2004-12-27 2008-04-29 Dalsa Semiconductor Inc. Anhydrous HF release of process for MEMS devices
KR100653722B1 (ko) 2005-01-05 2006-12-05 삼성전자주식회사 저유전막을 갖는 반도체소자의 제조방법
US7465953B1 (en) 2005-01-07 2008-12-16 Board Of Regents, The University Of Texas System Positioning of nanoparticles and fabrication of single election devices
US7253123B2 (en) 2005-01-10 2007-08-07 Applied Materials, Inc. Method for producing gate stack sidewall spacers
KR100610019B1 (ko) 2005-01-11 2006-08-08 삼성전자주식회사 플라즈마 분배장치 및 이를 구비하는 건식 스트리핑 장치
US20060162661A1 (en) 2005-01-22 2006-07-27 Applied Materials, Inc. Mixing energized and non-energized gases for silicon nitride deposition
US7829243B2 (en) 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication
JP4601439B2 (ja) 2005-02-01 2010-12-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
GB0502149D0 (en) 2005-02-02 2005-03-09 Boc Group Inc Method of operating a pumping system
US7341943B2 (en) 2005-02-08 2008-03-11 Taiwan Semiconductor Manufacturing Co., Ltd. Post etch copper cleaning using dry plasma
US20060183270A1 (en) 2005-02-14 2006-08-17 Tessera, Inc. Tools and methods for forming conductive bumps on microelectronic elements
JP4475136B2 (ja) 2005-02-18 2010-06-09 東京エレクトロン株式会社 処理システム、前処理装置及び記憶媒体
US7344912B1 (en) 2005-03-01 2008-03-18 Spansion Llc Method for patterning electrically conducting poly(phenyl acetylene) and poly(diphenyl acetylene)
JP4506677B2 (ja) 2005-03-11 2010-07-21 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
JP2006261217A (ja) 2005-03-15 2006-09-28 Canon Anelva Corp 薄膜形成方法
US7211525B1 (en) * 2005-03-16 2007-05-01 Novellus Systems, Inc. Hydrogen treatment enhanced gap fill
JP4518986B2 (ja) 2005-03-17 2010-08-04 東京エレクトロン株式会社 大気搬送室、被処理体の処理後搬送方法、プログラム及び記憶媒体
WO2006102180A2 (en) 2005-03-18 2006-09-28 Applied Materials, Inc. Contact metallization methods and processes
TW200734482A (en) 2005-03-18 2007-09-16 Applied Materials Inc Electroless deposition process on a contact containing silicon or silicide
US20060210723A1 (en) 2005-03-21 2006-09-21 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
US7435454B2 (en) 2005-03-21 2008-10-14 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
KR100610465B1 (ko) 2005-03-25 2006-08-08 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US20060215347A1 (en) 2005-03-28 2006-09-28 Tokyo Electron Limited Processing apparatus and recording medium
US7442274B2 (en) 2005-03-28 2008-10-28 Tokyo Electron Limited Plasma etching method and apparatus therefor
KR100689826B1 (ko) 2005-03-29 2007-03-08 삼성전자주식회사 불소 함유된 화학적 식각 가스를 사용하는 고밀도 플라즈마화학기상증착 방법들 및 이를 채택하여 반도체 소자를제조하는 방법들
JP4860167B2 (ja) 2005-03-30 2012-01-25 東京エレクトロン株式会社 ロードロック装置，処理システム及び処理方法
US7789962B2 (en) 2005-03-31 2010-09-07 Tokyo Electron Limited Device and method for controlling temperature of a mounting table, a program therefor, and a processing apparatus including same
US20060228889A1 (en) 2005-03-31 2006-10-12 Edelberg Erik A Methods of removing resist from substrates in resist stripping chambers
US7288482B2 (en) 2005-05-04 2007-10-30 International Business Machines Corporation Silicon nitride etching methods
US7431856B2 (en) 2005-05-18 2008-10-07 National Research Council Of Canada Nano-tip fabrication by spatially controlled etching
KR100731164B1 (ko) 2005-05-19 2007-06-20 주식회사 피에조닉스 샤워헤드를 구비한 화학기상 증착 방법 및 장치
US20060266288A1 (en) 2005-05-27 2006-11-30 Applied Materials, Inc. High plasma utilization for remote plasma clean
JP4853857B2 (ja) 2005-06-15 2012-01-11 東京エレクトロン株式会社 基板の処理方法，コンピュータ読み取り可能な記録媒体及び基板処理装置
KR100676203B1 (ko) 2005-06-21 2007-01-30 삼성전자주식회사 반도체 설비용 정전 척의 냉각 장치
US20060286774A1 (en) 2005-06-21 2006-12-21 Applied Materials. Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US20090194233A1 (en) 2005-06-23 2009-08-06 Tokyo Electron Limited Component for semicondutor processing apparatus and manufacturing method thereof
JP4554461B2 (ja) 2005-07-26 2010-09-29 株式会社日立ハイテクノロジーズ 半導体装置の製造方法
KR20080031473A (ko) 2005-07-27 2008-04-08 어플라이드 머티어리얼스, 인코포레이티드 입자 형성을 방지하기 위한 ｃｖｄ 차단 플레이트용 부동화기술
US8366829B2 (en) 2005-08-05 2013-02-05 Advanced Micro-Fabrication Equipment, Inc. Asia Multi-station decoupled reactive ion etch chamber
JP5213150B2 (ja) 2005-08-12 2013-06-19 国立大学法人東北大学 プラズマ処理装置及びプラズマ処理装置を用いた製品の製造方法
US8709162B2 (en) 2005-08-16 2014-04-29 Applied Materials, Inc. Active cooling substrate support
US7833381B2 (en) 2005-08-18 2010-11-16 David Johnson Optical emission interferometry for PECVD using a gas injection hole
DE102006038885B4 (de) 2005-08-24 2013-10-10 Wonik Ips Co., Ltd. Verfahren zum Abscheiden einer Ge-Sb-Te-Dünnschicht
US20070056925A1 (en) 2005-09-09 2007-03-15 Lam Research Corporation Selective etch of films with high dielectric constant with H2 addition
US20070066084A1 (en) 2005-09-21 2007-03-22 Cory Wajda Method and system for forming a layer with controllable spstial variation
US20070071888A1 (en) 2005-09-21 2007-03-29 Arulkumar Shanmugasundram Method and apparatus for forming device features in an integrated electroless deposition system
US7718030B2 (en) 2005-09-23 2010-05-18 Tokyo Electron Limited Method and system for controlling radical distribution
JP4823628B2 (ja) 2005-09-26 2011-11-24 東京エレクトロン株式会社 基板処理方法および記録媒体
DE102005047081B4 (de) 2005-09-30 2019-01-31 Robert Bosch Gmbh Verfahren zum plasmalosen Ätzen von Silizium mit dem Ätzgas ClF3 oder XeF2
US8102123B2 (en) 2005-10-04 2012-01-24 Topanga Technologies, Inc. External resonator electrode-less plasma lamp and method of exciting with radio-frequency energy
US7438534B2 (en) 2005-10-07 2008-10-21 Edwards Vacuum, Inc. Wide range pressure control using turbo pump
KR100703014B1 (ko) 2005-10-26 2007-04-06 삼성전자주식회사 실리콘 산화물 식각액 및 이를 이용한 반도체 소자의 제조 방법
US20070099806A1 (en) 2005-10-28 2007-05-03 Stewart Michael P Composition and method for selectively removing native oxide from silicon-containing surfaces
EP1780779A3 (en) 2005-10-28 2008-06-11 Interuniversitair Microelektronica Centrum ( Imec) A plasma for patterning advanced gate stacks
US7884032B2 (en) 2005-10-28 2011-02-08 Applied Materials, Inc. Thin film deposition
US7696101B2 (en) 2005-11-01 2010-04-13 Micron Technology, Inc. Process for increasing feature density during the manufacture of a semiconductor device
KR101019293B1 (ko) 2005-11-04 2011-03-07 어플라이드 머티어리얼스, 인코포레이티드 플라즈마-강화 원자층 증착 장치 및 방법
US20070107750A1 (en) 2005-11-14 2007-05-17 Sawin Herbert H Method of using NF3 for removing surface deposits from the interior of chemical vapor deposition chambers
JP4918778B2 (ja) 2005-11-16 2012-04-18 株式会社日立製作所 半導体集積回路装置の製造方法
US20070117396A1 (en) 2005-11-22 2007-05-24 Dingjun Wu Selective etching of titanium nitride with xenon difluoride
US7704887B2 (en) 2005-11-22 2010-04-27 Applied Materials, Inc. Remote plasma pre-clean with low hydrogen pressure
US7862683B2 (en) 2005-12-02 2011-01-04 Tokyo Electron Limited Chamber dry cleaning
KR100663668B1 (ko) 2005-12-07 2007-01-09 주식회사 뉴파워 프라즈마 복수의 기판을 병렬 배치 처리하기 위한 플라즈마 처리장치
US7662723B2 (en) 2005-12-13 2010-02-16 Lam Research Corporation Methods and apparatus for in-situ substrate processing
US7405160B2 (en) 2005-12-13 2008-07-29 Tokyo Electron Limited Method of making semiconductor device
JP4344949B2 (ja) 2005-12-27 2009-10-14 セイコーエプソン株式会社 シャワーヘッド、シャワーヘッドを含む成膜装置、ならびに強誘電体膜の製造方法
US7449538B2 (en) 2005-12-30 2008-11-11 Hynix Semiconductor Inc. Hard mask composition and method for manufacturing semiconductor device
US8088248B2 (en) 2006-01-11 2012-01-03 Lam Research Corporation Gas switching section including valves having different flow coefficients for gas distribution system
JP2007191792A (ja) 2006-01-19 2007-08-02 Atto Co Ltd ガス分離型シャワーヘッド
KR100712727B1 (ko) 2006-01-26 2007-05-04 주식회사 아토 절연체를 이용한 샤워헤드
US20070169703A1 (en) 2006-01-23 2007-07-26 Brent Elliot Advanced ceramic heater for substrate processing
US8173228B2 (en) 2006-01-27 2012-05-08 Applied Materials, Inc. Particle reduction on surfaces of chemical vapor deposition processing apparatus
US7494545B2 (en) 2006-02-03 2009-02-24 Applied Materials, Inc. Epitaxial deposition process and apparatus
KR100785164B1 (ko) 2006-02-04 2007-12-11 위순임 다중 출력 원격 플라즈마 발생기 및 이를 구비한 기판 처리시스템
KR100678696B1 (ko) 2006-02-08 2007-02-06 주식회사 뉴파워 프라즈마 환형 플라즈마를 형성하기 위한 페라이트 코어 조립체를구비한 자기 강화된 플라즈마 소오스
KR100752622B1 (ko) 2006-02-17 2007-08-30 한양대학교 산학협력단 원거리 플라즈마 발생장치
US20070207275A1 (en) 2006-02-21 2007-09-06 Applied Materials, Inc. Enhancement of remote plasma source clean for dielectric films
CN101378850A (zh) 2006-02-21 2009-03-04 应用材料股份有限公司 加强用于介电膜层的远程等离子体源清洁
US7713430B2 (en) 2006-02-23 2010-05-11 Micron Technology, Inc. Using positive DC offset of bias RF to neutralize charge build-up of etch features
US7520969B2 (en) 2006-03-07 2009-04-21 Applied Materials, Inc. Notched deposition ring
AU2007227602A1 (en) 2006-03-16 2007-09-27 Novartis Ag Heterocyclic organic compounds for the treatment of in particular melanoma
US7977245B2 (en) 2006-03-22 2011-07-12 Applied Materials, Inc. Methods for etching a dielectric barrier layer with high selectivity
US7381651B2 (en) 2006-03-22 2008-06-03 Axcelis Technologies, Inc. Processes for monitoring the levels of oxygen and/or nitrogen species in a substantially oxygen and nitrogen-free plasma ashing process
US7628574B2 (en) 2006-03-28 2009-12-08 Arcus Technology, Inc. Apparatus and method for processing substrates using one or more vacuum transfer chamber units
US8343280B2 (en) 2006-03-28 2013-01-01 Tokyo Electron Limited Multi-zone substrate temperature control system and method of operating
US7743731B2 (en) 2006-03-30 2010-06-29 Tokyo Electron Limited Reduced contaminant gas injection system and method of using
US7906032B2 (en) 2006-03-31 2011-03-15 Tokyo Electron Limited Method for conditioning a process chamber
US7780865B2 (en) 2006-03-31 2010-08-24 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
JP5042517B2 (ja) 2006-04-10 2012-10-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN100539080C (zh) 2006-04-12 2009-09-09 中芯国际集成电路制造(上海)有限公司 通过自对准形成多晶硅浮栅结构的方法
US20070243714A1 (en) 2006-04-18 2007-10-18 Applied Materials, Inc. Method of controlling silicon-containing polymer build up during etching by using a periodic cleaning step
US7488685B2 (en) 2006-04-25 2009-02-10 Micron Technology, Inc. Process for improving critical dimension uniformity of integrated circuit arrays
JP2010503977A (ja) 2006-04-26 2010-02-04 アドバンスト テクノロジー マテリアルズ，インコーポレイテッド 半導体処理システムの洗浄方法
US8226769B2 (en) 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
US20070254169A1 (en) 2006-04-28 2007-11-01 Kamins Theodore I Structures including organic self-assembled monolayers and methods of making the structures
US7297564B1 (en) 2006-05-02 2007-11-20 Sharp Laboratories Of America, Inc. Fabrication of vertical sidewalls on (110) silicon substrates for use in Si/SiGe photodetectors
US7601607B2 (en) 2006-05-15 2009-10-13 Chartered Semiconductor Manufacturing, Ltd. Protruded contact and insertion of inter-layer-dielectric material to match damascene hardmask to improve undercut for low-k interconnects
JP5578389B2 (ja) 2006-05-16 2014-08-27 Ｎｌｔテクノロジー株式会社 積層膜パターン形成方法及びゲート電極形成方法
US20070266946A1 (en) 2006-05-22 2007-11-22 Byung-Chul Choi Semiconductor device manufacturing apparatus and method of using the same
JP5119609B2 (ja) 2006-05-25 2013-01-16 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体、並びに半導体装置
US7825038B2 (en) 2006-05-30 2010-11-02 Applied Materials, Inc. Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
US20070281106A1 (en) 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill
US7790634B2 (en) 2006-05-30 2010-09-07 Applied Materials, Inc Method for depositing and curing low-k films for gapfill and conformal film applications
US20070277734A1 (en) 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill
US7665951B2 (en) 2006-06-02 2010-02-23 Applied Materials, Inc. Multiple slot load lock chamber and method of operation
US7777152B2 (en) 2006-06-13 2010-08-17 Applied Materials, Inc. High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck
JP5069427B2 (ja) 2006-06-13 2012-11-07 北陸成型工業株式会社 シャワープレート、並びにそれを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法
US7932181B2 (en) 2006-06-20 2011-04-26 Lam Research Corporation Edge gas injection for critical dimension uniformity improvement
US20070296967A1 (en) 2006-06-27 2007-12-27 Bhupendra Kumra Gupta Analysis of component for presence, composition and/or thickness of coating
US8114781B2 (en) 2006-06-29 2012-02-14 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
US7416989B1 (en) 2006-06-30 2008-08-26 Novellus Systems, Inc. Adsorption based material removal process
US7618889B2 (en) 2006-07-18 2009-11-17 Applied Materials, Inc. Dual damascene fabrication with low k materials
US9275887B2 (en) 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
US20080029032A1 (en) 2006-08-01 2008-02-07 Sun Jennifer Y Substrate support with protective layer for plasma resistance
GB0615343D0 (en) 2006-08-02 2006-09-13 Point 35 Microstructures Ltd Improved etch process
GB0616131D0 (en) 2006-08-14 2006-09-20 Oxford Instr Plasma Technology Surface processing apparatus
US20080045030A1 (en) 2006-08-15 2008-02-21 Shigeru Tahara Substrate processing method, substrate processing system and storage medium
US20080124937A1 (en) 2006-08-16 2008-05-29 Songlin Xu Selective etching method and apparatus
KR100761757B1 (ko) 2006-08-17 2007-09-28 삼성전자주식회사 막 형성 방법
KR100818708B1 (ko) 2006-08-18 2008-04-01 주식회사 하이닉스반도체 표면 세정을 포함하는 반도체소자 제조방법
US8110787B1 (en) 2006-08-23 2012-02-07 ON Semiconductor Trading, Ltd Image sensor with a reflective waveguide
US7575007B2 (en) 2006-08-23 2009-08-18 Applied Materials, Inc. Chamber recovery after opening barrier over copper
US20080063810A1 (en) 2006-08-23 2008-03-13 Applied Materials, Inc. In-situ process state monitoring of chamber
US20080063798A1 (en) 2006-08-30 2008-03-13 Kher Shreyas S Precursors and hardware for cvd and ald
US7611980B2 (en) 2006-08-30 2009-11-03 Micron Technology, Inc. Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures
US7452766B2 (en) 2006-08-31 2008-11-18 Micron Technology, Inc. Finned memory cells and the fabrication thereof
KR100849929B1 (ko) 2006-09-16 2008-08-26 주식회사 피에조닉스 반응 기체의 분사 속도를 적극적으로 조절하는 샤워헤드를구비한 화학기상 증착 방법 및 장치
US7297894B1 (en) 2006-09-25 2007-11-20 Tokyo Electron Limited Method for multi-step temperature control of a substrate
US20080075668A1 (en) 2006-09-27 2008-03-27 Goldstein Alan H Security Device Using Reversibly Self-Assembling Systems
CN101153396B (zh) 2006-09-30 2010-06-09 中芯国际集成电路制造(上海)有限公司 等离子刻蚀方法
US7589950B2 (en) 2006-10-13 2009-09-15 Applied Materials, Inc. Detachable electrostatic chuck having sealing assembly
JP2008103645A (ja) 2006-10-20 2008-05-01 Toshiba Corp 半導体装置の製造方法
US20080099147A1 (en) 2006-10-26 2008-05-01 Nyi Oo Myo Temperature controlled multi-gas distribution assembly
US7655571B2 (en) 2006-10-26 2010-02-02 Applied Materials, Inc. Integrated method and apparatus for efficient removal of halogen residues from etched substrates
JP2008109043A (ja) 2006-10-27 2008-05-08 Oki Electric Ind Co Ltd 半導体装置の製造方法および半導体装置
US7909961B2 (en) 2006-10-30 2011-03-22 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US8002946B2 (en) 2006-10-30 2011-08-23 Applied Materials, Inc. Mask etch plasma reactor with cathode providing a uniform distribution of etch rate
US20080102640A1 (en) 2006-10-30 2008-05-01 Applied Materials, Inc. Etching oxide with high selectivity to titanium nitride
US7943005B2 (en) 2006-10-30 2011-05-17 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US7880232B2 (en) 2006-11-01 2011-02-01 Micron Technology, Inc. Processes and apparatus having a semiconductor fin
US7725974B2 (en) 2006-11-02 2010-06-01 Hughes Randall L Shoe and foot cleaning and disinfecting system
US20080193673A1 (en) 2006-12-05 2008-08-14 Applied Materials, Inc. Method of processing a workpiece using a mid-chamber gas distribution plate, tuned plasma flow control grid and electrode
US7939422B2 (en) 2006-12-07 2011-05-10 Applied Materials, Inc. Methods of thin film process
KR20090094368A (ko) 2006-12-11 2009-09-04 어플라이드 머티어리얼스, 인코포레이티드 건식 포토레지스트 스트립핑 프로세스 및 장치
US8702866B2 (en) 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
TWM318795U (en) 2006-12-18 2007-09-11 Lighthouse Technology Co Ltd Package structure
US20100059889A1 (en) 2006-12-20 2010-03-11 Nxp, B.V. Adhesion of diffusion barrier on copper-containing interconnect element
US7922863B2 (en) 2006-12-22 2011-04-12 Applied Materials, Inc. Apparatus for integrated gas and radiation delivery
JP5229711B2 (ja) 2006-12-25 2013-07-03 国立大学法人名古屋大学 パターン形成方法、および半導体装置の製造方法
US20080156631A1 (en) 2006-12-27 2008-07-03 Novellus Systems, Inc. Methods of Producing Plasma in a Container
JP2008163430A (ja) 2006-12-28 2008-07-17 Jtekt Corp 高耐食性部材およびその製造方法
US20080157225A1 (en) 2006-12-29 2008-07-03 Suman Datta SRAM and logic transistors with variable height multi-gate transistor architecture
KR20080063988A (ko) 2007-01-03 2008-07-08 삼성전자주식회사 중성빔을 이용한 식각장치
US8097105B2 (en) 2007-01-11 2012-01-17 Lam Research Corporation Extending lifetime of yttrium oxide as a plasma chamber material
JP5168907B2 (ja) 2007-01-15 2013-03-27 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
JP4421618B2 (ja) 2007-01-17 2010-02-24 東京エレクトロン株式会社 フィン型電界効果トランジスタの製造方法
US7728364B2 (en) 2007-01-19 2010-06-01 International Business Machines Corporation Enhanced mobility CMOS transistors with a V-shaped channel with self-alignment to shallow trench isolation
JP4299863B2 (ja) 2007-01-22 2009-07-22 エルピーダメモリ株式会社 半導体装置の製造方法
US8444926B2 (en) 2007-01-30 2013-05-21 Applied Materials, Inc. Processing chamber with heated chamber liner
KR100878015B1 (ko) 2007-01-31 2009-01-13 삼성전자주식회사 산화물 제거 방법 및 이를 이용한 트렌치 매립 방법
JP5048352B2 (ja) 2007-01-31 2012-10-17 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2008205219A (ja) 2007-02-20 2008-09-04 Masato Toshima シャワーヘッドおよびこれを用いたｃｖｄ装置
US20080202892A1 (en) 2007-02-27 2008-08-28 Smith John M Stacked process chambers for substrate vacuum processing tool
CN100577866C (zh) 2007-02-27 2010-01-06 中微半导体设备(上海)有限公司 应用于等离子体反应室中的气体喷头组件、其制造方法及其翻新再利用的方法
US20080216901A1 (en) 2007-03-06 2008-09-11 Mks Instruments, Inc. Pressure control for vacuum processing system
US20080216958A1 (en) 2007-03-07 2008-09-11 Novellus Systems, Inc. Plasma Reaction Apparatus Having Pre-Seasoned Showerheads and Methods for Manufacturing the Same
US7977249B1 (en) 2007-03-07 2011-07-12 Novellus Systems, Inc. Methods for removing silicon nitride and other materials during fabrication of contacts
JP4833890B2 (ja) 2007-03-12 2011-12-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ分布補正方法
KR101526615B1 (ko) 2007-03-12 2015-06-05 도쿄엘렉트론가부시키가이샤 처리 균일성 제어 방법, 플라즈마 처리 장치 및 기판 국소 변형 방법
KR100853485B1 (ko) 2007-03-19 2008-08-21 주식회사 하이닉스반도체 리세스 게이트를 갖는 반도체 소자의 제조 방법
US20080233709A1 (en) 2007-03-22 2008-09-25 Infineon Technologies North America Corp. Method for removing material from a semiconductor
US7815814B2 (en) 2007-03-23 2010-10-19 Tokyo Electron Limited Method and system for dry etching a metal nitride
WO2008123060A1 (ja) 2007-03-28 2008-10-16 Canon Anelva Corporation 真空処理装置
JP4988402B2 (ja) 2007-03-30 2012-08-01 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8235001B2 (en) 2007-04-02 2012-08-07 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device
US8419854B2 (en) 2007-04-17 2013-04-16 Ulvac, Inc. Film-forming apparatus
JP5282419B2 (ja) 2007-04-18 2013-09-04 ソニー株式会社 半導体装置及びその製造方法
JP5135879B2 (ja) 2007-05-21 2013-02-06 富士電機株式会社 炭化珪素半導体装置の製造方法
KR100777043B1 (ko) 2007-05-22 2007-11-16 주식회사 테스 비정질 탄소막 형성 방법 및 이를 이용한 반도체 소자의제조 방법
US8084105B2 (en) 2007-05-23 2011-12-27 Applied Materials, Inc. Method of depositing boron nitride and boron nitride-derived materials
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US7807578B2 (en) 2007-06-01 2010-10-05 Applied Materials, Inc. Frequency doubling using spacer mask
JP2008305871A (ja) 2007-06-05 2008-12-18 Spansion Llc 半導体装置およびその製造方法
KR20080111627A (ko) 2007-06-19 2008-12-24 삼성전자주식회사 플라즈마 공정장치 및 그 방법
US20090004873A1 (en) 2007-06-26 2009-01-01 Intevac, Inc. Hybrid etch chamber with decoupled plasma controls
JP5008478B2 (ja) 2007-06-27 2012-08-22 東京エレクトロン株式会社 基板処理装置およびシャワーヘッド
US7585716B2 (en) 2007-06-27 2009-09-08 International Business Machines Corporation High-k/metal gate MOSFET with reduced parasitic capacitance
KR100877107B1 (ko) 2007-06-28 2009-01-07 주식회사 하이닉스반도체 반도체 소자의 층간절연막 형성방법
TWI479559B (zh) 2007-06-28 2015-04-01 Quantum Global Tech Llc 以選擇性噴灑蝕刻來清潔腔室部件的方法和設備
JP4438008B2 (ja) 2007-06-29 2010-03-24 東京エレクトロン株式会社 基板処理装置
US8021514B2 (en) 2007-07-11 2011-09-20 Applied Materials, Inc. Remote plasma source for pre-treatment of substrates prior to deposition
US8197636B2 (en) 2007-07-12 2012-06-12 Applied Materials, Inc. Systems for plasma enhanced chemical vapor deposition and bevel edge etching
JP5660753B2 (ja) 2007-07-13 2015-01-28 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマエッチング用高温カソード
EP2179521B1 (en) 2007-07-19 2016-09-07 Philips Lighting Holding B.V. Method, system and device for transmitting lighting device data
DE102007033685A1 (de) 2007-07-19 2009-01-22 Robert Bosch Gmbh Verfahren zum Ätzen einer Schicht auf einem Silizium-Halbleitersubstrat
JP5077659B2 (ja) 2007-07-20 2012-11-21 ニチアス株式会社 触媒コンバーター及び触媒コンバーター用保持材
US8008166B2 (en) 2007-07-26 2011-08-30 Applied Materials, Inc. Method and apparatus for cleaning a substrate surface
US8108981B2 (en) 2007-07-31 2012-02-07 Applied Materials, Inc. Method of making an electrostatic chuck with reduced plasma penetration and arcing
EP2042516A1 (en) 2007-09-27 2009-04-01 Protaffin Biotechnologie AG Glycosaminoglycan-antagonising MCP-1 mutants and methods of using same
US8367227B2 (en) 2007-08-02 2013-02-05 Applied Materials, Inc. Plasma-resistant ceramics with controlled electrical resistivity
JP5251033B2 (ja) 2007-08-14 2013-07-31 ソニー株式会社 半導体装置の製造方法
JP4160104B1 (ja) 2007-08-16 2008-10-01 株式会社アルバック アッシング装置
DE112008001663T5 (de) 2007-08-21 2010-07-22 Panasonic Corp., Kadoma Plasmaverarbeitungsvorrichtung und Verfahren zum Überwachen des Plasmaentladungszustands in einer Plasmaverarbeitungsvorrichtung
US8202393B2 (en) 2007-08-29 2012-06-19 Lam Research Corporation Alternate gas delivery and evacuation system for plasma processing apparatuses
JP5316412B2 (ja) 2007-08-31 2013-10-16 東京エレクトロン株式会社 半導体装置の製造方法
TWI459851B (zh) 2007-09-10 2014-11-01 Ngk Insulators Ltd heating equipment
JP5148955B2 (ja) 2007-09-11 2013-02-20 東京エレクトロン株式会社 基板載置機構及び基板処理装置
JP5347294B2 (ja) 2007-09-12 2013-11-20 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP5169097B2 (ja) 2007-09-14 2013-03-27 住友電気工業株式会社 半導体装置の製造装置および製造方法
US20120122319A1 (en) 2007-09-19 2012-05-17 Hironobu Shimizu Coating method for coating reaction tube prior to film forming process
US7781332B2 (en) 2007-09-19 2010-08-24 International Business Machines Corporation Methods to mitigate plasma damage in organosilicate dielectrics using a protective sidewall spacer
WO2009042137A2 (en) 2007-09-25 2009-04-02 Lam Research Corporation Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses
US8298931B2 (en) 2007-09-28 2012-10-30 Sandisk 3D Llc Dual damascene with amorphous carbon for 3D deep via/trench application
JP2009088229A (ja) 2007-09-28 2009-04-23 Tokyo Electron Ltd 成膜装置、成膜方法、記憶媒体及びガス供給装置
US20090084317A1 (en) 2007-09-28 2009-04-02 Applied Materials, Inc. Atomic layer deposition chamber and components
JP2009088522A (ja) 2007-09-28 2009-04-23 Hynix Semiconductor Inc 半導体装置のリセスゲート製造方法
KR101177983B1 (ko) 2007-10-11 2012-08-29 발렌스 프로세스 이큅먼트, 인코포레이티드 화학 기상 증착 반응기
US7838390B2 (en) 2007-10-12 2010-11-23 Samsung Electronics Co., Ltd. Methods of forming integrated circuit devices having ion-cured electrically insulating layers therein
US20090095222A1 (en) 2007-10-16 2009-04-16 Alexander Tam Multi-gas spiral channel showerhead
US20090095221A1 (en) 2007-10-16 2009-04-16 Alexander Tam Multi-gas concentric injection showerhead
US7976631B2 (en) 2007-10-16 2011-07-12 Applied Materials, Inc. Multi-gas straight channel showerhead
US8252696B2 (en) 2007-10-22 2012-08-28 Applied Materials, Inc. Selective etching of silicon nitride
US7871926B2 (en) 2007-10-22 2011-01-18 Applied Materials, Inc. Methods and systems for forming at least one dielectric layer
US8622021B2 (en) 2007-10-31 2014-01-07 Lam Research Corporation High lifetime consumable silicon nitride-silicon dioxide plasma processing components
US8083855B2 (en) 2007-10-31 2011-12-27 Lam Research Corporation Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body
WO2009057838A1 (en) 2007-11-01 2009-05-07 Eugene Technology Co., Ltd Apparatus for surface-treating wafer using high-frequency inductively-coupled plasma
WO2009057223A1 (ja) 2007-11-02 2009-05-07 Canon Anelva Corporation 表面処理装置およびその基板処理方法
JP5150217B2 (ja) 2007-11-08 2013-02-20 東京エレクトロン株式会社 シャワープレート及び基板処理装置
CN104037065A (zh) 2007-11-08 2014-09-10 朗姆研究公司 使用氧化物垫片减小节距
US7964040B2 (en) 2007-11-08 2011-06-21 Applied Materials, Inc. Multi-port pumping system for substrate processing chambers
US20090120364A1 (en) 2007-11-09 2009-05-14 Applied Materials, Inc. Gas mixing swirl insert assembly
JP5172617B2 (ja) 2007-11-12 2013-03-27 シャープ株式会社 気相成長装置及び気相成長方法
US7704849B2 (en) 2007-12-03 2010-04-27 Micron Technology, Inc. Methods of forming trench isolation in silicon of a semiconductor substrate by plasma
FR2924501B1 (fr) 2007-12-04 2010-02-05 Commissariat Energie Atomique Procede de reglage d'un circuit d'excitation et detection pour resonance magnetique nucleaire et circuit d'excitation et detection adapte a la mise en oeuvre d'un tel procede
MX2010005945A (es) 2007-12-04 2011-03-03 Parabel Ag Elemento solar de varias capas.
JP5142692B2 (ja) 2007-12-11 2013-02-13 株式会社東芝 不揮発性半導体記憶装置
US8187486B1 (en) 2007-12-13 2012-05-29 Novellus Systems, Inc. Modulating etch selectivity and etch rate of silicon nitride thin films
US8512509B2 (en) 2007-12-19 2013-08-20 Applied Materials, Inc. Plasma reactor gas distribution plate with radially distributed path splitting manifold
WO2009078921A1 (en) 2007-12-19 2009-06-25 Applied Materials, Inc. Plasma reactor gas distribution plate with path splitting manifold
US20090159213A1 (en) * 2007-12-19 2009-06-25 Applied Materials, Inc. Plasma reactor gas distribution plate having a path splitting manifold immersed within a showerhead
US7989329B2 (en) 2007-12-21 2011-08-02 Applied Materials, Inc. Removal of surface dopants from a substrate
KR20100103627A (ko) 2007-12-21 2010-09-27 어플라이드 머티어리얼스, 인코포레이티드 기판의 온도를 제어하기 위한 방법 및 장치
US8129029B2 (en) 2007-12-21 2012-03-06 Applied Materials, Inc. Erosion-resistant plasma chamber components comprising a metal base structure with an overlying thermal oxidation coating
JP4974873B2 (ja) 2007-12-26 2012-07-11 新光電気工業株式会社 静電チャック及び基板温調固定装置
US20090170331A1 (en) 2007-12-27 2009-07-02 International Business Machines Corporation Method of forming a bottle-shaped trench by ion implantation
US7910477B2 (en) 2007-12-28 2011-03-22 Texas Instruments Incorporated Etch residue reduction by ash methodology
TWI427697B (zh) 2007-12-28 2014-02-21 Tokyo Electron Ltd 金屬膜及金屬氧化膜之蝕刻方法與半導體裝置之製造方法
US8876024B2 (en) * 2008-01-10 2014-11-04 Applied Materials, Inc. Heated showerhead assembly
JP2009170509A (ja) 2008-01-11 2009-07-30 Hitachi High-Technologies Corp ヒータ内蔵静電チャックを備えたプラズマ処理装置
US8018023B2 (en) 2008-01-14 2011-09-13 Kabushiki Kaisha Toshiba Trench sidewall protection by a carbon-rich layer in a semiconductor device
US7998864B2 (en) 2008-01-29 2011-08-16 International Business Machines Corporation Noble metal cap for interconnect structures
TW200933812A (en) 2008-01-30 2009-08-01 Promos Technologies Inc Process for forming trench isolation structure and semiconductor device produced thereby
US20090191711A1 (en) 2008-01-30 2009-07-30 Ying Rui Hardmask open process with enhanced cd space shrink and reduction
US20110308453A1 (en) 2008-01-31 2011-12-22 Applied Materials, Inc. Closed loop mocvd deposition control
US20090194810A1 (en) 2008-01-31 2009-08-06 Masahiro Kiyotoshi Semiconductor device using element isolation region of trench isolation structure and manufacturing method thereof
JP5224837B2 (ja) 2008-02-01 2013-07-03 株式会社東芝 基板のプラズマ処理装置及びプラズマ処理方法
JP5250279B2 (ja) 2008-02-23 2013-07-31 東京エレクトロン株式会社 プローブ装置
KR101259484B1 (ko) 2008-02-26 2013-05-06 쿄세라 코포레이션 웨이퍼 지지 부재와 그 제조 방법, 및 이것을 사용한 정전 척
US20090214825A1 (en) 2008-02-26 2009-08-27 Applied Materials, Inc. Ceramic coating comprising yttrium which is resistant to a reducing plasma
US8066895B2 (en) 2008-02-28 2011-11-29 Applied Materials, Inc. Method to control uniformity using tri-zone showerhead
US9484213B2 (en) * 2008-03-06 2016-11-01 Tokyo Electron Limited Processing gas diffusing and supplying unit and substrate processing apparatus
US8336891B2 (en) 2008-03-11 2012-12-25 Ngk Insulators, Ltd. Electrostatic chuck
US7906818B2 (en) 2008-03-13 2011-03-15 Micron Technology, Inc. Memory array with a pair of memory-cell strings to a single conductive pillar
JP5188849B2 (ja) 2008-03-14 2013-04-24 Ｓｐｐテクノロジーズ株式会社 プラズマ処理装置
US9520275B2 (en) 2008-03-21 2016-12-13 Tokyo Electron Limited Mono-energetic neutral beam activated chemical processing system and method of using
KR101179065B1 (ko) 2008-03-24 2012-09-03 도쿄엘렉트론가부시키가이샤 샤워 플레이트와 이를 이용한 플라즈마 처리 장치
JP5352103B2 (ja) 2008-03-27 2013-11-27 東京エレクトロン株式会社 熱処理装置および処理システム
DE102008016425B4 (de) 2008-03-31 2015-11-19 Advanced Micro Devices, Inc. Verfahren zur Strukturierung einer Metallisierungsschicht durch Verringerung der durch Lackentfernung hervorgerufenen Schäden des dielektrischen Materials
JP5026326B2 (ja) 2008-04-04 2012-09-12 株式会社日立ハイテクノロジーズ エッチング処理状態の判定方法、システム
US20090258162A1 (en) 2008-04-12 2009-10-15 Applied Materials, Inc. Plasma processing apparatus and method
JP2009266952A (ja) 2008-04-23 2009-11-12 Seiko Epson Corp デバイスの製造方法及び製造装置
US7977246B2 (en) 2008-04-25 2011-07-12 Applied Materials, Inc. Thermal annealing method for preventing defects in doped silicon oxide surfaces during exposure to atmosphere
US8252194B2 (en) 2008-05-02 2012-08-28 Micron Technology, Inc. Methods of removing silicon oxide
US8398777B2 (en) 2008-05-02 2013-03-19 Applied Materials, Inc. System and method for pedestal adjustment
US8236133B2 (en) 2008-05-05 2012-08-07 Applied Materials, Inc. Plasma reactor with center-fed multiple zone gas distribution for improved uniformity of critical dimension bias
US20090274590A1 (en) 2008-05-05 2009-11-05 Applied Materials, Inc. Plasma reactor electrostatic chuck having a coaxial rf feed and multizone ac heater power transmission through the coaxial feed
US20090277587A1 (en) 2008-05-09 2009-11-12 Applied Materials, Inc. Flowable dielectric equipment and processes
US20090277874A1 (en) 2008-05-09 2009-11-12 Applied Materials, Inc. Method and apparatus for removing polymer from a substrate
US8357435B2 (en) 2008-05-09 2013-01-22 Applied Materials, Inc. Flowable dielectric equipment and processes
US8277670B2 (en) 2008-05-13 2012-10-02 Lam Research Corporation Plasma process with photoresist mask pretreatment
KR100999182B1 (ko) 2008-05-20 2010-12-08 주식회사 뉴파워 프라즈마 내장 변압기를 갖는 플라즈마 반응기
KR100998011B1 (ko) 2008-05-22 2010-12-03 삼성엘이디 주식회사 화학기상 증착장치
KR101006848B1 (ko) 2008-05-28 2011-01-14 주식회사 코미코 기판 지지 장치 및 이를 포함하는 기판 처리 장치
DE102008026134A1 (de) 2008-05-30 2009-12-17 Advanced Micro Devices, Inc., Sunnyvale Mikrostrukturbauelement mit einer Metallisierungsstruktur mit selbstjustierten Luftspalten zwischen dichtliegenden Metallleitungen
US7754601B2 (en) 2008-06-03 2010-07-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor interconnect air gap formation process
US20090302005A1 (en) 2008-06-04 2009-12-10 General Electric Company Processes for texturing a surface prior to electroless plating
KR20090128913A (ko) 2008-06-11 2009-12-16 성균관대학교산학협력단 태양전지용 실리콘 기판의 텍스처링 장치 및 그 방법
US7699935B2 (en) 2008-06-19 2010-04-20 Applied Materials, Inc. Method and system for supplying a cleaning gas into a process chamber
JP2010003826A (ja) 2008-06-19 2010-01-07 Toshiba Corp 半導体装置の製造方法
US8607731B2 (en) 2008-06-23 2013-12-17 Applied Materials, Inc. Cathode with inner and outer electrodes at different heights
JP5222040B2 (ja) 2008-06-25 2013-06-26 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
CN101932750B (zh) 2008-06-27 2014-05-07 三菱重工业株式会社 真空处理装置及真空处理装置的运转方法
JP5211332B2 (ja) 2008-07-01 2013-06-12 株式会社ユーテック プラズマｃｖｄ装置、ｄｌｃ膜及び薄膜の製造方法
US8291857B2 (en) 2008-07-03 2012-10-23 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition
US8161906B2 (en) 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
US8206506B2 (en) 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
WO2010006279A2 (en) 2008-07-11 2010-01-14 Applied Materials, Inc. Chamber components for cvd applications
CN102089867B (zh) 2008-07-11 2013-11-27 东京毅力科创株式会社 等离子体处理装置
WO2010008021A1 (ja) 2008-07-15 2010-01-21 キヤノンアネルバ株式会社 プラズマ処理方法及びプラズマ処理装置
US8336188B2 (en) 2008-07-17 2012-12-25 Formfactor, Inc. Thin wafer chuck
US20100018648A1 (en) 2008-07-23 2010-01-28 Applied Marterials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
JP2011253832A (ja) 2008-07-24 2011-12-15 Canon Anelva Corp レジストトリミング方法及びトリミング装置
KR20100013980A (ko) 2008-08-01 2010-02-10 주식회사 하이닉스반도체 반도체 소자의 소자 분리막 형성 방법
US20100025370A1 (en) 2008-08-04 2010-02-04 Applied Materials, Inc. Reactive gas distributor, reactive gas treatment system, and reactive gas treatment method
EP2321846A4 (en) 2008-08-12 2012-03-14 Applied Materials Inc ELECTROSTATIC FODDER ASSEMBLY
EP2324687B1 (en) 2008-08-20 2016-01-27 Vision Dynamics Holding B.V. Device for generating a plasma discharge for patterning the surface of a substrate
US7882808B2 (en) 2008-08-20 2011-02-08 Crazy K Poultry + Livestock, LLC Protective hen apron
US8268729B2 (en) 2008-08-21 2012-09-18 International Business Machines Corporation Smooth and vertical semiconductor fin structure
JP2010047818A (ja) 2008-08-25 2010-03-04 Toshiba Corp 半導体製造装置および半導体製造方法
KR100997502B1 (ko) 2008-08-26 2010-11-30 금호석유화학 주식회사 개환된 프탈릭 언하이드라이드를 포함하는 유기 반사 방지막 조성물과 이의 제조방법
KR101025741B1 (ko) 2008-09-02 2011-04-04 주식회사 하이닉스반도체 수직 채널 트랜지스터의 활성필라 제조방법
US8871645B2 (en) 2008-09-11 2014-10-28 Applied Materials, Inc. Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof
US8168268B2 (en) 2008-12-12 2012-05-01 Ovishinsky Innovation, LLC Thin film deposition via a spatially-coordinated and time-synchronized process
US7709396B2 (en) 2008-09-19 2010-05-04 Applied Materials, Inc. Integral patterning of large features along with array using spacer mask patterning process flow
JP5295833B2 (ja) 2008-09-24 2013-09-18 株式会社東芝 基板処理装置および基板処理方法
US20100081285A1 (en) 2008-09-30 2010-04-01 Tokyo Electron Limited Apparatus and Method for Improving Photoresist Properties
US7968441B2 (en) 2008-10-08 2011-06-28 Applied Materials, Inc. Dopant activation anneal to achieve less dopant diffusion (better USJ profile) and higher activation percentage
US7928003B2 (en) 2008-10-10 2011-04-19 Applied Materials, Inc. Air gap interconnects using carbon-based films
US7910491B2 (en) 2008-10-16 2011-03-22 Applied Materials, Inc. Gapfill improvement with low etch rate dielectric liners
US8207470B2 (en) 2008-10-20 2012-06-26 Industry-University Cooperation Foundation Hanyang University Apparatus for generating remote plasma
US20100099263A1 (en) 2008-10-20 2010-04-22 Applied Materials, Inc. Nf3/h2 remote plasma process with high etch selectivity of psg/bpsg over thermal oxide and low density surface defects
CN102197714A (zh) 2008-10-21 2011-09-21 应用材料股份有限公司 清洁腔室及工艺所用的等离子体源
US8173547B2 (en) 2008-10-23 2012-05-08 Lam Research Corporation Silicon etch with passivation using plasma enhanced oxidation
US20100101727A1 (en) 2008-10-27 2010-04-29 Helin Ji Capacitively coupled remote plasma source with large operating pressure range
JP5396065B2 (ja) 2008-10-28 2014-01-22 株式会社日立製作所 半導体装置の製造方法
US8206829B2 (en) 2008-11-10 2012-06-26 Applied Materials, Inc. Plasma resistant coatings for plasma chamber components
US20100116788A1 (en) 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support
US8043933B2 (en) 2008-11-24 2011-10-25 Applied Materials, Inc. Integration sequences with top surface profile modification
JP5358165B2 (ja) 2008-11-26 2013-12-04 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
US20100144140A1 (en) 2008-12-10 2010-06-10 Novellus Systems, Inc. Methods for depositing tungsten films having low resistivity for gapfill applications
US20100147219A1 (en) 2008-12-12 2010-06-17 Jui Hai Hsieh High temperature and high voltage electrode assembly design
US8869741B2 (en) 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
US8540844B2 (en) 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
US8058179B1 (en) 2008-12-23 2011-11-15 Novellus Systems, Inc. Atomic layer removal process with higher etch amount
JP2010154699A (ja) 2008-12-26 2010-07-08 Hitachi Ltd 磁束可変型回転電機
US20100183825A1 (en) 2008-12-31 2010-07-22 Cambridge Nanotech Inc. Plasma atomic layer deposition system and method
KR101587601B1 (ko) 2009-01-14 2016-01-25 삼성전자주식회사 비휘발성 메모리 장치의 제조 방법
US20100187694A1 (en) 2009-01-28 2010-07-29 Chen-Hua Yu Through-Silicon Via Sidewall Isolation Structure
US7964517B2 (en) 2009-01-29 2011-06-21 Texas Instruments Incorporated Use of a biased precoat for reduced first wafer defects in high-density plasma process
KR20100087915A (ko) 2009-01-29 2010-08-06 삼성전자주식회사 실린더형 스토리지 노드를 포함하는 반도체 메모리 소자 및그 제조 방법
CN102768933B (zh) 2009-01-31 2017-06-30 应用材料公司 用于蚀刻的方法
KR101527195B1 (ko) 2009-02-02 2015-06-10 삼성전자주식회사 수직 구조의 비휘발성 메모리 소자
JP5210191B2 (ja) 2009-02-03 2013-06-12 東京エレクトロン株式会社 窒化珪素膜のドライエッチング方法
JP2010180458A (ja) 2009-02-06 2010-08-19 Kit:Kk アルミニウム表面の酸化層形成方法及び半導体装置の製造方法
US8992723B2 (en) 2009-02-13 2015-03-31 Applied Material, Inc. RF bus and RF return bus for plasma chamber electrode
US8148749B2 (en) 2009-02-19 2012-04-03 Fairchild Semiconductor Corporation Trench-shielded semiconductor device
US20110048325A1 (en) 2009-03-03 2011-03-03 Sun Hong Choi Gas Distribution Apparatus and Substrate Processing Apparatus Having the Same
US20100224322A1 (en) 2009-03-03 2010-09-09 Applied Materials, Inc. Endpoint detection for a reactor chamber using a remote plasma chamber
WO2010102125A2 (en) 2009-03-05 2010-09-10 Applied Materials, Inc. Inductively coupled plasma reactor having rf phase control and methods of use thereof
US20110124144A1 (en) 2009-03-17 2011-05-26 Roth & Rau Ag Substrate processing system and substrate processing method
KR101539699B1 (ko) 2009-03-19 2015-07-27 삼성전자주식회사 3차원 구조의 비휘발성 메모리 소자 및 그 제조방법
US8312839B2 (en) 2009-03-24 2012-11-20 Applied Materials, Inc. Mixing frequency at multiple feeding points
US8382999B2 (en) 2009-03-26 2013-02-26 Applied Materials, Inc. Pulsed plasma high aspect ratio dielectric process
JP5657262B2 (ja) 2009-03-27 2015-01-21 東京エレクトロン株式会社 プラズマ処理装置
KR101534357B1 (ko) 2009-03-31 2015-07-06 도쿄엘렉트론가부시키가이샤 기판 지지 장치 및 기판 지지 방법
JP5501807B2 (ja) 2009-03-31 2014-05-28 東京エレクトロン株式会社 処理装置
US8026179B2 (en) 2009-04-09 2011-09-27 Macronix International Co., Ltd. Patterning method and integrated circuit structure
US8272346B2 (en) 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
US20100263588A1 (en) 2009-04-15 2010-10-21 Gan Zhiyin Methods and apparatus for epitaxial growth of semiconductor materials
EP2422359A4 (en) 2009-04-20 2013-07-03 Applied Materials Inc REINFORCED ABSORPTION OF RESTFLUORRADIKALEN WITH THE HELP OF A SILICONE COATING ON PROCESS CHAMBER WALLS
US9431237B2 (en) 2009-04-20 2016-08-30 Applied Materials, Inc. Post treatment methods for oxide layers on semiconductor devices
US8193075B2 (en) 2009-04-20 2012-06-05 Applied Materials, Inc. Remote hydrogen plasma with ion filter for terminating silicon dangling bonds
US9312154B2 (en) 2009-04-21 2016-04-12 Applied Materials, Inc. CVD apparatus for improved film thickness non-uniformity and particle performance
US20100273291A1 (en) 2009-04-28 2010-10-28 Applied Materials, Inc. Decontamination of mocvd chamber using nh3 purge after in-situ cleaning
US8623141B2 (en) 2009-05-18 2014-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Piping system and control for semiconductor processing
WO2010141257A2 (en) 2009-06-03 2010-12-09 Applied Materials, Inc. Method and apparatus for etching
US8753447B2 (en) 2009-06-10 2014-06-17 Novellus Systems, Inc. Heat shield for heater in semiconductor processing apparatus
US8492292B2 (en) 2009-06-29 2013-07-23 Applied Materials, Inc. Methods of forming oxide layers on substrates
US8894767B2 (en) 2009-07-15 2014-11-25 Applied Materials, Inc. Flow control features of CVD chambers
US8124531B2 (en) 2009-08-04 2012-02-28 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US7935643B2 (en) 2009-08-06 2011-05-03 Applied Materials, Inc. Stress management for tensile films
US8404598B2 (en) 2009-08-07 2013-03-26 Applied Materials, Inc. Synchronized radio frequency pulsing for plasma etching
US7989365B2 (en) 2009-08-18 2011-08-02 Applied Materials, Inc. Remote plasma source seasoning
KR101095119B1 (ko) 2009-08-19 2011-12-16 삼성전기주식회사 다이 패키지 및 그 제조방법
US9299539B2 (en) 2009-08-21 2016-03-29 Lam Research Corporation Method and apparatus for measuring wafer bias potential
JP2013503414A (ja) 2009-08-26 2013-01-31 ビーコ・インスツルメンツ・インコーポレーテッド 磁気記録媒体上にパターンを製造するためのシステム
KR20120090996A (ko) 2009-08-27 2012-08-17 어플라이드 머티어리얼스, 인코포레이티드 인-시튜 챔버 세정 후 프로세스 챔버의 제염 방법
US8211808B2 (en) 2009-08-31 2012-07-03 Applied Materials, Inc. Silicon-selective dry etch for carbon-containing films
KR101200139B1 (ko) 2009-09-02 2012-11-13 세키스이가가쿠 고교가부시키가이샤 실리콘 함유막의 에칭 방법
US20120171852A1 (en) 2009-09-04 2012-07-05 Applied Materials, Inc Remote hydrogen plasma source of silicon containing film deposition
US20110065276A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110061812A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110061810A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
JP5648349B2 (ja) 2009-09-17 2015-01-07 東京エレクトロン株式会社 成膜装置
US8216640B2 (en) 2009-09-25 2012-07-10 Hermes-Epitek Corporation Method of making showerhead for semiconductor processing apparatus
US8329587B2 (en) 2009-10-05 2012-12-11 Applied Materials, Inc. Post-planarization densification
US9449859B2 (en) 2009-10-09 2016-09-20 Applied Materials, Inc. Multi-gas centrally cooled showerhead design
TWI430714B (zh) 2009-10-15 2014-03-11 Orbotech Lt Solar Llc 電漿處理腔之噴撒頭組件及電漿處理腔之噴撒頭組件之氣體電離板之製備方法
EP2315028A1 (en) 2009-10-26 2011-04-27 Atlas Antibodies AB PODXL protein in colorectal cancer
KR101757922B1 (ko) 2009-10-27 2017-07-14 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
CN102668096B (zh) 2009-10-30 2015-04-29 株式会社半导体能源研究所 半导体装置及其制造方法
CN102598131B (zh) 2009-11-04 2016-04-13 应用材料公司 用于图案化的磁盘媒体应用的等离子体离子注入工艺
JP5257328B2 (ja) 2009-11-04 2013-08-07 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
US8455364B2 (en) 2009-11-06 2013-06-04 International Business Machines Corporation Sidewall image transfer using the lithographic stack as the mandrel
KR20120104992A (ko) 2009-11-06 2012-09-24 램버스 인코포레이티드 3-차원 메모리 어레이 적층 구조물
KR20110054840A (ko) 2009-11-18 2011-05-25 주식회사 아토 샤워헤드 어셈블리 및 이를 구비한 박막증착장치
US8771538B2 (en) 2009-11-18 2014-07-08 Applied Materials, Inc. Plasma source design
US8742665B2 (en) 2009-11-18 2014-06-03 Applied Materials, Inc. Plasma source design
WO2011066508A2 (en) 2009-11-30 2011-06-03 Applied Materials, Inc. Chamber for processing hard disk drive substrates
US8604697B2 (en) 2009-12-09 2013-12-10 Jehara Corporation Apparatus for generating plasma
CN102652353B (zh) 2009-12-09 2016-12-07 诺发系统有限公司 新颖间隙填充整合
US8202803B2 (en) 2009-12-11 2012-06-19 Tokyo Electron Limited Method to remove capping layer of insulation dielectric in interconnect structures
US20130023062A1 (en) 2009-12-11 2013-01-24 Takeshi Masuda Thin film manufacturing apparatus, thin film manufacturing method and method for manufacturing semiconductor device
US20110139748A1 (en) 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
US20110140229A1 (en) 2009-12-16 2011-06-16 Willy Rachmady Techniques for forming shallow trench isolation
US8274017B2 (en) 2009-12-18 2012-09-25 Applied Materials, Inc. Multifunctional heater/chiller pedestal for wide range wafer temperature control
US20110151677A1 (en) 2009-12-21 2011-06-23 Applied Materials, Inc. Wet oxidation process performed on a dielectric material formed from a flowable cvd process
US8501629B2 (en) 2009-12-23 2013-08-06 Applied Materials, Inc. Smooth SiConi etch for silicon-containing films
JP4927158B2 (ja) 2009-12-25 2012-05-09 東京エレクトロン株式会社 基板処理方法、その基板処理方法を実行させるためのプログラムを記録した記録媒体及び基板処理装置
US20110303146A1 (en) 2009-12-28 2011-12-15 Osamu Nishijima Plasma doping apparatus
US8329262B2 (en) 2010-01-05 2012-12-11 Applied Materials, Inc. Dielectric film formation using inert gas excitation
JP5710209B2 (ja) 2010-01-18 2015-04-30 東京エレクトロン株式会社 電磁波給電機構およびマイクロ波導入機構
JP5166458B2 (ja) 2010-01-22 2013-03-21 株式会社東芝 半導体装置及びその製造方法
JP5608384B2 (ja) 2010-02-05 2014-10-15 東京エレクトロン株式会社 半導体装置の製造方法及びプラズマエッチング装置
EP2360292B1 (en) 2010-02-08 2012-03-28 Roth & Rau AG Parallel plate reactor for uniform thin film deposition with reduced tool foot-print
US8946828B2 (en) 2010-02-09 2015-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having elevated structure and method of manufacturing the same
US20110198034A1 (en) 2010-02-11 2011-08-18 Jennifer Sun Gas distribution showerhead with coating material for semiconductor processing
US8361338B2 (en) 2010-02-11 2013-01-29 Taiwan Semiconductor Manufacturing Company, Ltd. Hard mask removal method
JP5476152B2 (ja) 2010-02-16 2014-04-23 積水化学工業株式会社 窒化シリコンのエッチング方法及び装置
US8456009B2 (en) 2010-02-18 2013-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure having an air-gap region and a method of manufacturing the same
JP5662079B2 (ja) 2010-02-24 2015-01-28 東京エレクトロン株式会社 エッチング処理方法
US20110207332A1 (en) 2010-02-25 2011-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Thin film coated process kits for semiconductor manufacturing tools
KR101214758B1 (ko) 2010-02-26 2012-12-21 성균관대학교산학협력단 식각 방법
KR101853802B1 (ko) 2010-03-05 2018-05-02 어플라이드 머티어리얼스, 인코포레이티드 라디칼­성분 ｃｖｄ에 의한 컨포멀 층들
KR101810532B1 (ko) 2010-03-12 2017-12-19 어플라이드 머티어리얼스, 인코포레이티드 다중 인젝트를 이용하는 원자 층 증착 챔버
WO2011115926A1 (en) 2010-03-16 2011-09-22 Sandisk 3D, Llc Bottom electrodes for use with metal oxide resistivity switching layers
JP5450187B2 (ja) 2010-03-16 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US20130012030A1 (en) 2010-03-17 2013-01-10 Applied Materials, Inc. Method and apparatus for remote plasma source assisted silicon-containing film deposition
US8435902B2 (en) 2010-03-17 2013-05-07 Applied Materials, Inc. Invertable pattern loading with dry etch
US8574447B2 (en) 2010-03-31 2013-11-05 Lam Research Corporation Inorganic rapid alternating process for silicon etch
US20110256692A1 (en) 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
US20110256421A1 (en) 2010-04-16 2011-10-20 United Technologies Corporation Metallic coating for single crystal alloys
US8288268B2 (en) 2010-04-29 2012-10-16 International Business Machines Corporation Microelectronic structure including air gap
US20110265951A1 (en) 2010-04-30 2011-11-03 Applied Materials, Inc. Twin chamber processing system
US8562742B2 (en) 2010-04-30 2013-10-22 Applied Materials, Inc. Apparatus for radial delivery of gas to a chamber and methods of use thereof
US20110265884A1 (en) 2010-04-30 2011-11-03 Applied Materials, Inc. Twin chamber processing system with shared vacuum pump
US8475674B2 (en) 2010-04-30 2013-07-02 Applied Materials, Inc. High-temperature selective dry etch having reduced post-etch solid residue
US8721798B2 (en) 2010-04-30 2014-05-13 Applied Materials, Inc. Methods for processing substrates in process systems having shared resources
US20110278260A1 (en) 2010-05-14 2011-11-17 Applied Materials, Inc. Inductive plasma source with metallic shower head using b-field concentrator
US8361906B2 (en) 2010-05-20 2013-01-29 Applied Materials, Inc. Ultra high selectivity ashable hard mask film
US20140154668A1 (en) 2010-05-21 2014-06-05 The Trustees Of Princeton University Structures for Enhancement of Local Electric Field, Light Absorption, Light Radiation, Material Detection and Methods for Making and Using of the Same.
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
JP5751895B2 (ja) 2010-06-08 2015-07-22 株式会社日立国際電気 半導体装置の製造方法、クリーニング方法および基板処理装置
US8373239B2 (en) 2010-06-08 2013-02-12 International Business Machines Corporation Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric
JP2011258768A (ja) 2010-06-09 2011-12-22 Sumitomo Electric Ind Ltd 炭化珪素基板、エピタキシャル層付き基板、半導体装置および炭化珪素基板の製造方法
US20110304078A1 (en) 2010-06-14 2011-12-15 Applied Materials, Inc. Methods for removing byproducts from load lock chambers
US8349681B2 (en) 2010-06-30 2013-01-08 Sandisk Technologies Inc. Ultrahigh density monolithic, three dimensional vertical NAND memory device
US8928061B2 (en) 2010-06-30 2015-01-06 SanDisk Technologies, Inc. Three dimensional NAND device with silicide containing floating gates
US20120009796A1 (en) 2010-07-09 2012-01-12 Applied Materials, Inc. Post-ash sidewall healing
JP5463224B2 (ja) 2010-07-09 2014-04-09 日本発條株式会社 流路付きプレートの製造方法、流路付きプレート、温度調節プレート、コールドプレート、及びシャワープレート
KR101202352B1 (ko) 2010-07-19 2012-11-16 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
US8338211B2 (en) 2010-07-27 2012-12-25 Amtech Systems, Inc. Systems and methods for charging solar cell layers
US8278203B2 (en) 2010-07-28 2012-10-02 Sandisk Technologies Inc. Metal control gate formation in non-volatile storage
US9184028B2 (en) 2010-08-04 2015-11-10 Lam Research Corporation Dual plasma volume processing apparatus for neutral/ion flux control
US20130059448A1 (en) 2011-09-07 2013-03-07 Lam Research Corporation Pulsed Plasma Chamber in Dual Chamber Configuration
US8869742B2 (en) 2010-08-04 2014-10-28 Lam Research Corporation Plasma processing chamber with dual axial gas injection and exhaust
US9449793B2 (en) 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
JP5198611B2 (ja) 2010-08-12 2013-05-15 株式会社東芝 ガス供給部材、プラズマ処理装置およびイットリア含有膜の形成方法
US8222125B2 (en) 2010-08-12 2012-07-17 Ovshinsky Innovation, Llc Plasma deposition of amorphous semiconductors at microwave frequencies
TW201213594A (en) 2010-08-16 2012-04-01 Air Liquide Etching of oxide materials
US20120017989A1 (en) 2010-08-24 2012-01-26 Pai-Chun Chang Metal and metal oxide surface texturing
KR20120022251A (ko) 2010-09-01 2012-03-12 삼성전자주식회사 플라즈마 식각방법 및 그의 장치
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
US8580699B2 (en) 2010-09-10 2013-11-12 Applied Materials, Inc. Embedded catalyst for atomic layer deposition of silicon oxide
US20120088356A1 (en) 2010-09-14 2012-04-12 Applied Materials, Inc. Integrated platform for in-situ doping and activation of substrates
KR20120029291A (ko) 2010-09-16 2012-03-26 삼성전자주식회사 반도체 소자 및 그 제조 방법
US8840754B2 (en) 2010-09-17 2014-09-23 Lam Research Corporation Polar regions for electrostatic de-chucking with lift pins
WO2012039932A2 (en) 2010-09-21 2012-03-29 Applied Materials, Inc. Methods for forming layers on a substrate
US8633423B2 (en) 2010-10-14 2014-01-21 Applied Materials, Inc. Methods and apparatus for controlling substrate temperature in a process chamber
KR101209003B1 (ko) 2010-10-14 2012-12-06 주식회사 유진테크 3차원 구조의 메모리 소자를 제조하는 방법 및 장치
US8183134B2 (en) 2010-10-19 2012-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces
US20120097330A1 (en) 2010-10-20 2012-04-26 Applied Materials, Inc. Dual delivery chamber design
US9123762B2 (en) 2010-10-22 2015-09-01 Applied Materials, Inc. Substrate support with symmetrical feed structure
JP5544343B2 (ja) 2010-10-29 2014-07-09 東京エレクトロン株式会社 成膜装置
US20130224960A1 (en) 2010-10-29 2013-08-29 Applied Materials, Inc. Methods for etching oxide layers using process gas pulsing
US9111994B2 (en) 2010-11-01 2015-08-18 Magnachip Semiconductor, Ltd. Semiconductor device and method of fabricating the same
US8133349B1 (en) 2010-11-03 2012-03-13 Lam Research Corporation Rapid and uniform gas switching for a plasma etch process
KR20130135261A (ko) 2010-11-03 2013-12-10 어플라이드 머티어리얼스, 인코포레이티드 실리콘 카바이드 및 실리콘 카보나이트라이드 막들을 증착하기 위한 장치 및 방법들
US8389416B2 (en) 2010-11-22 2013-03-05 Tokyo Electron Limited Process for etching silicon with selectivity to silicon-germanium
KR20120058962A (ko) 2010-11-30 2012-06-08 삼성전자주식회사 반도체 장치의 제조 방법
US8475103B2 (en) 2010-12-09 2013-07-02 Hamilton Sundstand Corporation Sealing washer assembly for large diameter holes on flat surfaces
US8470713B2 (en) 2010-12-13 2013-06-25 International Business Machines Corporation Nitride etch for improved spacer uniformity
US8741778B2 (en) 2010-12-14 2014-06-03 Applied Materials, Inc. Uniform dry etch in two stages
US9719169B2 (en) 2010-12-20 2017-08-01 Novellus Systems, Inc. System and apparatus for flowable deposition in semiconductor fabrication
JP5728221B2 (ja) 2010-12-24 2015-06-03 東京エレクトロン株式会社 基板処理方法及び記憶媒体
US20120177846A1 (en) 2011-01-07 2012-07-12 Applied Materials, Inc. Radical steam cvd
KR101246170B1 (ko) 2011-01-13 2013-03-25 국제엘렉트릭코리아 주식회사 반도체 제조에 사용되는 분사부재 및 그것을 갖는 플라즈마 처리 장치
KR101529578B1 (ko) 2011-01-14 2015-06-19 성균관대학교산학협력단 플라즈마 기판 처리 장치 및 방법
US20120180954A1 (en) 2011-01-18 2012-07-19 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8363476B2 (en) 2011-01-19 2013-01-29 Macronix International Co., Ltd. Memory device, manufacturing method and operating method of the same
US9018692B2 (en) 2011-01-19 2015-04-28 Macronix International Co., Ltd. Low cost scalable 3D memory
JP6006643B2 (ja) 2011-01-20 2016-10-12 東京エレクトロン株式会社 真空処理装置
US8723423B2 (en) 2011-01-25 2014-05-13 Advanced Energy Industries, Inc. Electrostatic remote plasma source
US9068265B2 (en) 2011-02-01 2015-06-30 Applied Materials, Inc. Gas distribution plate with discrete protective elements
KR101732936B1 (ko) 2011-02-14 2017-05-08 삼성전자주식회사 반도체 소자의 미세 패턴 형성 방법
US8771539B2 (en) 2011-02-22 2014-07-08 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch
US20120216955A1 (en) 2011-02-25 2012-08-30 Toshiba Materials Co., Ltd. Plasma processing apparatus
WO2012118847A2 (en) 2011-02-28 2012-09-07 Inpria Corportion Solution processible hardmarks for high resolusion lithography
CN203746815U (zh) 2011-03-01 2014-07-30 应用材料公司 用于处理基板的腔室
CN103403852B (zh) 2011-03-01 2016-06-08 应用材料公司 双负载闸配置的消除及剥离处理腔室
TW201246362A (en) 2011-03-01 2012-11-16 Univ King Abdullah Sci & Tech Silicon germanium mask for deep silicon etching
JP2014512294A (ja) 2011-03-02 2014-05-22 ゲーム・チェンジャーズ・リミテッド・ライアビリティ・カンパニー エアクッション式輸送機関
CN106884157B (zh) 2011-03-04 2019-06-21 诺发系统公司 混合型陶瓷喷淋头
FR2972563B1 (fr) 2011-03-07 2013-03-01 Altis Semiconductor Snc Procédé de traitement d'une couche de nitrure de métal oxydée
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US20120238108A1 (en) 2011-03-14 2012-09-20 Applied Materials, Inc. Two-stage ozone cure for dielectric films
TWI534291B (zh) 2011-03-18 2016-05-21 應用材料股份有限公司 噴淋頭組件
CN103430285B (zh) 2011-03-22 2016-06-01 应用材料公司 用于化学气相沉积腔室的衬里组件
WO2012128348A1 (ja) 2011-03-23 2012-09-27 住友大阪セメント株式会社 静電チャック装置
US8980418B2 (en) 2011-03-24 2015-03-17 Uchicago Argonne, Llc Sequential infiltration synthesis for advanced lithography
JP5864879B2 (ja) 2011-03-31 2016-02-17 東京エレクトロン株式会社 基板処理装置及びその制御方法
JP5815967B2 (ja) 2011-03-31 2015-11-17 東京エレクトロン株式会社 基板洗浄装置及び真空処理システム
JP6003011B2 (ja) 2011-03-31 2016-10-05 東京エレクトロン株式会社 基板処理装置
US9196463B2 (en) 2011-04-07 2015-11-24 Varian Semiconductor Equipment Associates, Inc. System and method for plasma monitoring using microwaves
US8460569B2 (en) 2011-04-07 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Method and system for post-etch treatment of patterned substrate features
US20120258607A1 (en) 2011-04-11 2012-10-11 Lam Research Corporation E-Beam Enhanced Decoupled Source for Semiconductor Processing
US8815720B2 (en) 2011-04-12 2014-08-26 Varian Semiconductor Equipment Associates, Inc. Method of etching a workpiece
US9695510B2 (en) 2011-04-21 2017-07-04 Kurt J. Lesker Company Atomic layer deposition apparatus and process
US8415250B2 (en) 2011-04-29 2013-04-09 International Business Machines Corporation Method of forming silicide contacts of different shapes selectively on regions of a semiconductor device
US8298954B1 (en) 2011-05-06 2012-10-30 International Business Machines Corporation Sidewall image transfer process employing a cap material layer for a metal nitride layer
US20120285621A1 (en) 2011-05-10 2012-11-15 Applied Materials, Inc. Semiconductor chamber apparatus for dielectric processing
EP2707375A4 (en) 2011-05-13 2015-01-07 Greenct Canada MONO-METALLIC GROUP-11 PRECURSOR COMPOUNDS AND USE THEREOF IN A METAL SEPARATION
US9012283B2 (en) 2011-05-16 2015-04-21 International Business Machines Corporation Integrated circuit (IC) chip having both metal and silicon gate field effect transistors (FETs) and method of manufacture
US8663389B2 (en) 2011-05-21 2014-03-04 Andrew Peter Clarke Method and apparatus for crystal growth using a membrane-assisted semi-closed reactor
JP5563522B2 (ja) 2011-05-23 2014-07-30 東京エレクトロン株式会社 プラズマ処理装置
US8562785B2 (en) 2011-05-31 2013-10-22 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
KR101390900B1 (ko) 2011-05-31 2014-04-30 세메스 주식회사 기판처리장치
US8466073B2 (en) 2011-06-03 2013-06-18 Applied Materials, Inc. Capping layer for reduced outgassing
WO2012169747A2 (ko) 2011-06-09 2012-12-13 한국기초과학지원연구원 벨트형 자석을 포함한 플라즈마 발생원 및 이를 이용한 박막 증착 시스템
US8637372B2 (en) 2011-06-29 2014-01-28 GlobalFoundries, Inc. Methods for fabricating a FINFET integrated circuit on a bulk silicon substrate
US8883637B2 (en) 2011-06-30 2014-11-11 Novellus Systems, Inc. Systems and methods for controlling etch selectivity of various materials
US9117867B2 (en) 2011-07-01 2015-08-25 Applied Materials, Inc. Electrostatic chuck assembly
US9054048B2 (en) 2011-07-05 2015-06-09 Applied Materials, Inc. NH3 containing plasma nitridation of a layer on a substrate
CN102867748B (zh) 2011-07-06 2015-09-23 中国科学院微电子研究所 一种晶体管及其制作方法和包括该晶体管的半导体芯片
KR20110086540A (ko) 2011-07-12 2011-07-28 조인숙 불소화합물을 이용한 필름의 선택적인 식각 방법
US8617411B2 (en) 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
US8741775B2 (en) 2011-07-20 2014-06-03 Applied Materials, Inc. Method of patterning a low-K dielectric film
US8921177B2 (en) 2011-07-22 2014-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating an integrated circuit device
US8974601B2 (en) 2011-07-29 2015-03-10 Semes Co., Ltd. Apparatuses, systems and methods for treating substrate
US20130034666A1 (en) 2011-08-01 2013-02-07 Applied Materials, Inc. Inductive plasma sources for wafer processing and chamber cleaning
US8771536B2 (en) 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
KR101271247B1 (ko) 2011-08-02 2013-06-07 주식회사 유진테크 에피택셜 공정을 위한 반도체 제조설비
CN102915902B (zh) 2011-08-02 2015-11-25 中微半导体设备(上海)有限公司 一种电容耦合式的等离子体处理装置及其基片加工方法
JP5893864B2 (ja) 2011-08-02 2016-03-23 東京エレクトロン株式会社 プラズマエッチング方法
US9117759B2 (en) 2011-08-10 2015-08-25 Micron Technology, Inc. Methods of forming bulb-shaped trenches in silicon
US20130045605A1 (en) 2011-08-18 2013-02-21 Applied Materials, Inc. Dry-etch for silicon-and-nitrogen-containing films
US8735291B2 (en) 2011-08-25 2014-05-27 Tokyo Electron Limited Method for etching high-k dielectric using pulsed bias power
US8679982B2 (en) 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
US8679983B2 (en) 2011-09-01 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
US20150270135A1 (en) 2011-09-01 2015-09-24 Tel Epion Inc. Gas cluster ion beam etching process
US9039911B2 (en) 2012-08-27 2015-05-26 Lam Research Corporation Plasma-enhanced etching in an augmented plasma processing system
US20130217243A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Doping of dielectric layers
US8808562B2 (en) 2011-09-12 2014-08-19 Tokyo Electron Limited Dry metal etching method
US20130260564A1 (en) 2011-09-26 2013-10-03 Applied Materials, Inc. Insensitive dry removal process for semiconductor integration
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
US8664012B2 (en) 2011-09-30 2014-03-04 Tokyo Electron Limited Combined silicon oxide etch and contamination removal process
US8551891B2 (en) 2011-10-04 2013-10-08 Applied Materials, Inc. Remote plasma burn-in
US9653267B2 (en) 2011-10-06 2017-05-16 Applied Materials, Inc. Temperature controlled chamber liner
WO2013050243A1 (en) 2011-10-06 2013-04-11 Asml Netherlands B.V. Chuck, lithography apparatus and method of using a chuck
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
US20130087309A1 (en) 2011-10-11 2013-04-11 Applied Materials, Inc. Substrate support with temperature control
JP5740281B2 (ja) 2011-10-20 2015-06-24 東京エレクトロン株式会社 金属膜のドライエッチング方法
US9666414B2 (en) 2011-10-27 2017-05-30 Applied Materials, Inc. Process chamber for etching low k and other dielectric films
US9574268B1 (en) 2011-10-28 2017-02-21 Asm America, Inc. Pulsed valve manifold for atomic layer deposition
US20130107415A1 (en) 2011-10-28 2013-05-02 Applied Materials, Inc. Electrostatic chuck
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
KR20140092892A (ko) 2011-11-08 2014-07-24 어플라이드 머티어리얼스, 인코포레이티드 개선된 증착 균일성을 위한 전구체 분배 피처들
US20130115372A1 (en) 2011-11-08 2013-05-09 Primestar Solar, Inc. High emissivity distribution plate in vapor deposition apparatus and processes
JP5779482B2 (ja) 2011-11-15 2015-09-16 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US8652298B2 (en) 2011-11-21 2014-02-18 Lam Research Corporation Triode reactor design with multiple radiofrequency powers
US8898889B2 (en) 2011-11-22 2014-12-02 Lam Research Corporation Chuck assembly for plasma processing
US8900364B2 (en) 2011-11-29 2014-12-02 Intermolecular, Inc. High productivity vapor processing system
US20130143415A1 (en) * 2011-12-01 2013-06-06 Applied Materials, Inc. Multi-Component Film Deposition
US8440523B1 (en) 2011-12-07 2013-05-14 International Business Machines Corporation Micromechanical device and methods to fabricate same using hard mask resistant to structure release etch
US20130149866A1 (en) 2011-12-12 2013-06-13 Texas Instruments Incorporated Baffle plate for semiconductor processing apparatus
US8988848B2 (en) 2011-12-15 2015-03-24 Applied Materials, Inc. Extended and independent RF powered cathode substrate for extreme edge tunability
KR20130072911A (ko) 2011-12-22 2013-07-02 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 그 제조 방법
KR101878311B1 (ko) 2011-12-30 2018-07-17 삼성전자주식회사 ｈｉｇｈ-Ｋ막을 스페이서 에치 스톱으로 이용하는 반도체 소자 형성 방법 및 관련된 소자
US8603891B2 (en) 2012-01-20 2013-12-10 Micron Technology, Inc. Methods for forming vertical memory devices and apparatuses
JP6010406B2 (ja) 2012-01-27 2016-10-19 東京エレクトロン株式会社 マイクロ波放射機構、マイクロ波プラズマ源および表面波プラズマ処理装置
US8747686B2 (en) 2012-01-27 2014-06-10 Applied Materials, Inc. Methods of end point detection for substrate fabrication processes
SG11201403527UA (en) 2012-02-08 2014-09-26 Iwatani Corp Method for treating inner surface of chlorine trifluoride supply passage in apparatus using chlorine trifluoride
US20130175654A1 (en) 2012-02-10 2013-07-11 Sylvain Muckenhirn Bulk nanohole structures for thermoelectric devices and methods for making the same
CN104137248B (zh) 2012-02-29 2017-03-22 应用材料公司 配置中的除污及剥除处理腔室
KR102131581B1 (ko) 2012-03-27 2020-07-08 노벨러스 시스템즈, 인코포레이티드 텅스텐 피처 충진
US8747610B2 (en) 2012-03-30 2014-06-10 Tokyo Electron Limited Plasma source pumping and gas injection baffle
US8937800B2 (en) 2012-04-24 2015-01-20 Applied Materials, Inc. Electrostatic chuck with advanced RF and temperature uniformity
US9162236B2 (en) 2012-04-26 2015-10-20 Applied Materials, Inc. Proportional and uniform controlled gas flow delivery for dry plasma etch apparatus
US9948214B2 (en) 2012-04-26 2018-04-17 Applied Materials, Inc. High temperature electrostatic chuck with real-time heat zone regulating capability
KR20170109690A (ko) 2012-04-26 2017-09-29 어플라이드 머티어리얼스, 인코포레이티드 Ｅｓｃ 본딩 접착제 부식을 방지하기 위한 방법들 및 장치
US20130284369A1 (en) 2012-04-26 2013-10-31 Applied Materials, Inc. Two-phase operation of plasma chamber by phase locked loop
US9161428B2 (en) 2012-04-26 2015-10-13 Applied Materials, Inc. Independent control of RF phases of separate coils of an inductively coupled plasma reactor
JP6005579B2 (ja) 2012-04-27 2016-10-12 日本碍子株式会社 半導体製造装置用部材
US9394615B2 (en) 2012-04-27 2016-07-19 Applied Materials, Inc. Plasma resistant ceramic coated conductive article
US9976215B2 (en) 2012-05-01 2018-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor film formation apparatus and process
JP2013235912A (ja) 2012-05-08 2013-11-21 Tokyo Electron Ltd 被処理基体をエッチングする方法、及びプラズマエッチング装置
CN105274498B (zh) 2012-05-11 2017-10-27 中微半导体设备(上海)有限公司 气体喷淋头、其制造方法及薄膜生长反应器
JP6157061B2 (ja) 2012-05-11 2017-07-05 東京エレクトロン株式会社 ガス供給装置及び基板処理装置
US20130298942A1 (en) 2012-05-14 2013-11-14 Applied Materials, Inc. Etch remnant removal
KR101917815B1 (ko) 2012-05-31 2018-11-13 에스케이하이닉스 주식회사 에어갭을 구비한 반도체장치 및 그 제조 방법
FR2991320B1 (fr) 2012-06-05 2014-06-27 Commissariat Energie Atomique Procede de preparation d'amines methylees
US8974164B2 (en) 2012-06-26 2015-03-10 Newfrey Llc Plastic high heat fastener
US9034773B2 (en) 2012-07-02 2015-05-19 Novellus Systems, Inc. Removal of native oxide with high selectivity
US8916477B2 (en) 2012-07-02 2014-12-23 Novellus Systems, Inc. Polysilicon etch with high selectivity
US8802572B2 (en) 2012-07-10 2014-08-12 Applied Materials, Inc. Method of patterning a low-k dielectric film
KR101989514B1 (ko) 2012-07-11 2019-06-14 삼성전자주식회사 반도체 소자 및 그 제조 방법
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9184030B2 (en) 2012-07-19 2015-11-10 Lam Research Corporation Edge exclusion control with adjustable plasma exclusion zone ring
US9631273B2 (en) 2012-07-25 2017-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for dielectric deposition process
US20150170811A1 (en) 2012-08-01 2015-06-18 Tdk Corporation Ferrite magnetic material, ferrite sintered magnet, and motor
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US8772888B2 (en) 2012-08-10 2014-07-08 Avalanche Technology Inc. MTJ MRAM with stud patterning
US8747680B1 (en) 2012-08-14 2014-06-10 Everspin Technologies, Inc. Method of manufacturing a magnetoresistive-based device
KR102133373B1 (ko) 2012-08-23 2020-07-13 어플라이드 머티어리얼스, 인코포레이티드 Uv 챔버들을 세정하기 위한 방법 및 하드웨어
US8993058B2 (en) 2012-08-28 2015-03-31 Applied Materials, Inc. Methods and apparatus for forming tantalum silicate layers on germanium or III-V semiconductor devices
US20140062285A1 (en) 2012-08-29 2014-03-06 Mks Instruments, Inc. Method and Apparatus for a Large Area Inductive Plasma Source
US9121097B2 (en) 2012-08-31 2015-09-01 Novellus Systems, Inc. Variable showerhead flow by varying internal baffle conductance
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
JP6027374B2 (ja) 2012-09-12 2016-11-16 東京エレクトロン株式会社 プラズマ処理装置及びフィルタユニット
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US20140099794A1 (en) 2012-09-21 2014-04-10 Applied Materials, Inc. Radical chemistry modulation and control using multiple flow pathways
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US9018022B2 (en) 2012-09-24 2015-04-28 Lam Research Corporation Showerhead electrode assembly in a capacitively coupled plasma processing apparatus
TWI604528B (zh) 2012-10-02 2017-11-01 應用材料股份有限公司 使用電漿預處理與高溫蝕刻劑沉積的方向性二氧化矽蝕刻
TWI591712B (zh) 2012-10-03 2017-07-11 應用材料股份有限公司 使用低溫蝕刻劑沉積與電漿後處理的方向性二氧化矽蝕刻
KR102137617B1 (ko) 2012-10-19 2020-07-24 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
CN103794460B (zh) 2012-10-29 2016-12-21 中微半导体设备(上海)有限公司 用于半导体装置性能改善的涂层
US9165783B2 (en) 2012-11-01 2015-10-20 Applied Materials, Inc. Method of patterning a low-k dielectric film
JP6035117B2 (ja) 2012-11-09 2016-11-30 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
US8765574B2 (en) 2012-11-09 2014-07-01 Applied Materials, Inc. Dry etch process
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US9064816B2 (en) 2012-11-30 2015-06-23 Applied Materials, Inc. Dry-etch for selective oxidation removal
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9777564B2 (en) 2012-12-03 2017-10-03 Pyrophase, Inc. Stimulating production from oil wells using an RF dipole antenna
US20140166618A1 (en) 2012-12-14 2014-06-19 The Penn State Research Foundation Ultra-high speed anisotropic reactive ion etching
US9982343B2 (en) 2012-12-14 2018-05-29 Applied Materials, Inc. Apparatus for providing plasma to a process chamber
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
JP6173684B2 (ja) 2012-12-25 2017-08-02 株式会社日立ハイテクノロジーズ 半導体装置の製造方法
CN104025720B (zh) 2012-12-28 2016-08-24 株式会社新动力等离子体 等离子体反应器及利用该反应器的等离子体点火方法
JP6328931B2 (ja) 2012-12-31 2018-05-23 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジストパターントリミング方法
US9165823B2 (en) 2013-01-08 2015-10-20 Macronix International Co., Ltd. 3D stacking semiconductor device and manufacturing method thereof
US9093389B2 (en) 2013-01-16 2015-07-28 Applied Materials, Inc. Method of patterning a silicon nitride dielectric film
JP6080571B2 (ja) 2013-01-31 2017-02-15 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US8970114B2 (en) 2013-02-01 2015-03-03 Lam Research Corporation Temperature controlled window of a plasma processing chamber component
JP2014154421A (ja) 2013-02-12 2014-08-25 Tokyo Electron Ltd プラズマ処理装置、プラズマ処理方法、および高周波発生器
US20140234466A1 (en) 2013-02-21 2014-08-21 HGST Netherlands B.V. Imprint mold and method for making using sidewall spacer line doubling
US9449795B2 (en) 2013-02-28 2016-09-20 Novellus Systems, Inc. Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor
TWI487004B (zh) 2013-03-01 2015-06-01 Winbond Electronics Corp 圖案化的方法及記憶體元件的形成方法
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
KR102064914B1 (ko) 2013-03-06 2020-01-10 삼성전자주식회사 식각 공정 장치 및 식각 공정 방법
US8801952B1 (en) 2013-03-07 2014-08-12 Applied Materials, Inc. Conformal oxide dry etch
US10170282B2 (en) 2013-03-08 2019-01-01 Applied Materials, Inc. Insulated semiconductor faceplate designs
US8859433B2 (en) 2013-03-11 2014-10-14 International Business Machines Corporation DSA grapho-epitaxy process with etch stop material
US8946023B2 (en) 2013-03-12 2015-02-03 Sandisk Technologies Inc. Method of making a vertical NAND device using sequential etching of multilayer stacks
US20140262031A1 (en) 2013-03-12 2014-09-18 Sergey G. BELOSTOTSKIY Multi-mode etch chamber source assembly
KR102021988B1 (ko) 2013-03-12 2019-09-17 삼성전자주식회사 반도체 소자 및 그의 제조 방법
TWI625424B (zh) 2013-03-13 2018-06-01 應用材料股份有限公司 蝕刻包含過渡金屬的膜之方法
US20140273451A1 (en) 2013-03-13 2014-09-18 Applied Materials, Inc. Tungsten deposition sequence
US20140273525A1 (en) 2013-03-13 2014-09-18 Intermolecular, Inc. Atomic Layer Deposition of Reduced-Leakage Post-Transition Metal Oxide Films
WO2014164300A1 (en) 2013-03-13 2014-10-09 Applied Materials, Inc Pulsed pc plasma etching process and apparatus
US9411237B2 (en) 2013-03-14 2016-08-09 Applied Materials, Inc. Resist hardening and development processes for semiconductor device manufacturing
US9006106B2 (en) 2013-03-14 2015-04-14 Applied Materials, Inc. Method of removing a metal hardmask
US9556507B2 (en) 2013-03-14 2017-01-31 Applied Materials, Inc. Yttria-based material coated chemical vapor deposition chamber heater
US9117670B2 (en) 2013-03-14 2015-08-25 Sunedison Semiconductor Limited (Uen201334164H) Inject insert liner assemblies for chemical vapor deposition systems and methods of using same
US9276011B2 (en) 2013-03-15 2016-03-01 Micron Technology, Inc. Cell pillar structures and integrated flows
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
WO2014145263A1 (en) 2013-03-15 2014-09-18 Dr. Py Institute, Llc Single-use needle assembly and method
US8946076B2 (en) 2013-03-15 2015-02-03 Micron Technology, Inc. Methods of fabricating integrated structures, and methods of forming vertically-stacked memory cells
JP5386046B1 (ja) 2013-03-27 2014-01-15 エピクルー株式会社 サセプタ支持部およびこのサセプタ支持部を備えるエピタキシャル成長装置
US10125422B2 (en) 2013-03-27 2018-11-13 Applied Materials, Inc. High impedance RF filter for heater with impedance tuning device
US10941501B2 (en) 2013-03-29 2021-03-09 Analytical Specialties, Inc. Method and composition for metal finishing
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
US9230819B2 (en) 2013-04-05 2016-01-05 Lam Research Corporation Internal plasma grid applications for semiconductor fabrication in context of ion-ion plasma processing
US20140308758A1 (en) 2013-04-10 2014-10-16 Applied Materials, Inc. Patterning magnetic memory
US8748322B1 (en) 2013-04-16 2014-06-10 Applied Materials, Inc. Silicon oxide recess etch
US20140311581A1 (en) 2013-04-19 2014-10-23 Applied Materials, Inc. Pressure controller configuration for semiconductor processing applications
US9449797B2 (en) 2013-05-07 2016-09-20 Lam Research Corporation Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface
US9720022B2 (en) 2015-05-19 2017-08-01 Lam Research Corporation Systems and methods for providing characteristics of an impedance matching model for use with matching networks
US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US20140342569A1 (en) 2013-05-16 2014-11-20 Applied Materials, Inc. Near surface etch selectivity enhancement
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
US9082826B2 (en) 2013-05-24 2015-07-14 Lam Research Corporation Methods and apparatuses for void-free tungsten fill in three-dimensional semiconductor features
JP6002087B2 (ja) 2013-05-29 2016-10-05 東京エレクトロン株式会社 グラフェンの生成方法
US20140357083A1 (en) 2013-05-31 2014-12-04 Applied Materials, Inc. Directed block copolymer self-assembly patterns for advanced photolithography applications
JP6180799B2 (ja) 2013-06-06 2017-08-16 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR102038647B1 (ko) 2013-06-21 2019-10-30 주식회사 원익아이피에스 기판 지지 장치 및 이를 구비하는 기판 처리 장치
US10808317B2 (en) 2013-07-03 2020-10-20 Lam Research Corporation Deposition apparatus including an isothermal processing zone
US9677176B2 (en) 2013-07-03 2017-06-13 Novellus Systems, Inc. Multi-plenum, dual-temperature showerhead
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US8871651B1 (en) 2013-07-12 2014-10-28 Globalfoundries Inc. Mask formation processing
US8932947B1 (en) 2013-07-23 2015-01-13 Applied Materials, Inc. Methods for forming a round bottom silicon trench recess for semiconductor applications
US9362163B2 (en) 2013-07-30 2016-06-07 Lam Research Corporation Methods and apparatuses for atomic layer cleaning of contacts and vias
KR102154112B1 (ko) 2013-08-01 2020-09-09 삼성전자주식회사 금속 배선들을 포함하는 반도체 장치 및 그 제조 방법
CN110735181A (zh) * 2013-08-09 2020-01-31 应用材料公司 于外延生长之前预清洁基板表面的方法和设备
US20150050812A1 (en) 2013-08-13 2015-02-19 Globalfoundries Inc. Wafer-less auto clean of processing chamber
US9543163B2 (en) 2013-08-20 2017-01-10 Applied Materials, Inc. Methods for forming features in a material layer utilizing a combination of a main etching and a cyclical etching process
WO2015031163A1 (en) 2013-08-27 2015-03-05 Tokyo Electron Limited Method for laterally trimming a hardmask
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
JP5837012B2 (ja) 2013-09-12 2015-12-24 ラピスセミコンダクタ株式会社 モニタリング方法、プラズマモニタリング方法、モニタリングシステム及びプラズマモニタリングシステム
US9230980B2 (en) 2013-09-15 2016-01-05 Sandisk Technologies Inc. Single-semiconductor-layer channel in a memory opening for a three-dimensional non-volatile memory device
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US9051655B2 (en) 2013-09-16 2015-06-09 Applied Materials, Inc. Boron ionization for aluminum oxide etch enhancement
US8980758B1 (en) 2013-09-17 2015-03-17 Applied Materials, Inc. Methods for etching an etching stop layer utilizing a cyclical etching process
CN110066984B (zh) 2013-09-27 2021-06-08 应用材料公司 实现无缝钴间隙填充的方法
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
US9214377B2 (en) 2013-10-31 2015-12-15 Applied Materials, Inc. Methods for silicon recess structures in a substrate by utilizing a doping layer
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
US9396963B2 (en) 2013-11-06 2016-07-19 Mattson Technology Mask removal process strategy for vertical NAND device
CN108922844A (zh) 2013-11-06 2018-11-30 应用材料公司 通过dc偏压调制的颗粒产生抑制器
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9330937B2 (en) 2013-11-13 2016-05-03 Intermolecular, Inc. Etching of semiconductor structures that include titanium-based layers
US8945414B1 (en) 2013-11-13 2015-02-03 Intermolecular, Inc. Oxide removal by remote plasma treatment with fluorine and oxygen radicals
US9514953B2 (en) 2013-11-20 2016-12-06 Applied Materials, Inc. Methods for barrier layer removal
FR3013503B1 (fr) 2013-11-20 2015-12-18 Commissariat Energie Atomique Procede de gravure selective d’un masque dispose sur un substrat silicie
KR102237700B1 (ko) 2013-11-27 2021-04-08 삼성전자주식회사 수직형 메모리 장치 및 그 제조 방법
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
WO2015082083A1 (en) 2013-12-04 2015-06-11 Nec Europe Ltd. Method and system for generating a virtual device resource accessible by an application
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
US9312168B2 (en) 2013-12-16 2016-04-12 Applied Materials, Inc. Air gap structure integration using a processing system
US20150170926A1 (en) 2013-12-16 2015-06-18 David J. Michalak Dielectric layers having ordered elongate pores
KR102102787B1 (ko) 2013-12-17 2020-04-22 삼성전자주식회사 기판 처리 장치 및 블록커 플레이트 어셈블리
US20150171008A1 (en) 2013-12-17 2015-06-18 GLOBAL FOUNDRIES Singapore Ptd. Ltd. Integrated circuits with dummy contacts and methods for producing such integrated circuits
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US20150170879A1 (en) 2013-12-17 2015-06-18 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US20150170943A1 (en) 2013-12-17 2015-06-18 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9622375B2 (en) 2013-12-31 2017-04-11 Applied Materials, Inc. Electrostatic chuck with external flow adjustments for improved temperature distribution
US9111907B2 (en) 2014-01-02 2015-08-18 Globalfoundries Inc. Silicide protection during contact metallization and resulting semiconductor structures
KR102128465B1 (ko) 2014-01-03 2020-07-09 삼성전자주식회사 수직 구조의 비휘발성 메모리 소자
US9945033B2 (en) 2014-01-06 2018-04-17 Applied Materials, Inc. High efficiency inductively coupled plasma source with customized RF shield for plasma profile control
US20150200042A1 (en) 2014-01-10 2015-07-16 Applied Materials, Inc. Recessing ultra-low k dielectric using remote plasma source
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9299577B2 (en) 2014-01-24 2016-03-29 Applied Materials, Inc. Methods for etching a dielectric barrier layer in a dual damascene structure
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US20150214066A1 (en) 2014-01-27 2015-07-30 Applied Materials, Inc. Method for material removal in dry etch reactor
US9502218B2 (en) 2014-01-31 2016-11-22 Applied Materials, Inc. RPS assisted RF plasma source for semiconductor processing
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9305749B2 (en) 2014-02-10 2016-04-05 Applied Materials, Inc. Methods of directing magnetic fields in a plasma source, and associated systems
JP6059165B2 (ja) 2014-02-19 2017-01-11 東京エレクトロン株式会社 エッチング方法、及びプラズマ処理装置
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9209031B2 (en) 2014-03-07 2015-12-08 Sandisk Technologies Inc. Metal replacement process for low resistance source contacts in 3D NAND
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9190290B2 (en) 2014-03-31 2015-11-17 Applied Materials, Inc. Halogen-free gas-phase silicon etch
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
KR102175763B1 (ko) 2014-04-09 2020-11-09 삼성전자주식회사 반도체 메모리 장치 및 이의 제조 방법
US9177853B1 (en) 2014-05-14 2015-11-03 Sandisk Technologies Inc. Barrier layer stack for bit line air gap formation
CN104392963B (zh) 2014-05-16 2017-07-11 中国科学院微电子研究所 三维半导体器件制造方法
US9520485B2 (en) 2014-05-21 2016-12-13 Macronix International Co., Ltd. 3D independent double gate flash memory on bounded conductor layer
US9881788B2 (en) 2014-05-22 2018-01-30 Lam Research Corporation Back side deposition apparatus and applications
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US20150345029A1 (en) 2014-05-28 2015-12-03 Applied Materials, Inc. Metal removal
US10269541B2 (en) 2014-06-02 2019-04-23 Applied Materials, Inc. Workpiece processing chamber having a thermal controlled microwave window
US9773683B2 (en) 2014-06-09 2017-09-26 American Air Liquide, Inc. Atomic layer or cyclic plasma etching chemistries and processes
US9666449B2 (en) 2014-06-17 2017-05-30 Micron Technology, Inc. Conductors having a variable concentration of germanium for governing removal rates of the conductor during control gate formation
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US20150371865A1 (en) 2014-06-19 2015-12-24 Applied Materials, Inc. High selectivity gas phase silicon nitride removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9502518B2 (en) 2014-06-23 2016-11-22 Stmicroelectronics, Inc. Multi-channel gate-all-around FET
US20150371861A1 (en) 2014-06-23 2015-12-24 Applied Materials, Inc. Protective silicon oxide patterning
KR102248205B1 (ko) 2014-06-25 2021-05-04 삼성전자주식회사 수직 채널 및 에어 갭을 갖는 반도체 소자
US9768270B2 (en) 2014-06-25 2017-09-19 Sandisk Technologies Llc Method of selectively depositing floating gate material in a memory device
US10487399B2 (en) 2014-06-26 2019-11-26 Applied Materials, Inc. Atomic layer deposition chamber with counter-flow multi inject
US10196741B2 (en) 2014-06-27 2019-02-05 Applied Materials, Inc. Wafer placement and gap control optimization through in situ feedback
KR20160002543A (ko) 2014-06-30 2016-01-08 세메스 주식회사 기판 처리 장치
US9911579B2 (en) 2014-07-03 2018-03-06 Applied Materials, Inc. Showerhead having a detachable high resistivity gas distribution plate
US20160005833A1 (en) 2014-07-03 2016-01-07 Applied Materials, Inc. Feol low-k spacers
US10192717B2 (en) 2014-07-21 2019-01-29 Applied Materials, Inc. Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US20160043099A1 (en) 2014-08-05 2016-02-11 Applied Materials, Inc. Wordline 3d flash memory air gap
US20160042968A1 (en) 2014-08-05 2016-02-11 Applied Materials, Inc. Integrated oxide and si etch for 3d cell channel mobility improvements
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9460898B2 (en) 2014-08-08 2016-10-04 Applied Materials, Inc. Plasma generation chamber with smooth plasma resistant coating
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
JP6315809B2 (ja) 2014-08-28 2018-04-25 東京エレクトロン株式会社 エッチング方法
US9558928B2 (en) 2014-08-29 2017-01-31 Lam Research Corporation Contact clean in high-aspect ratio structures
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9735009B2 (en) 2014-09-15 2017-08-15 Applied Materials, Inc. Pre-clean of silicon germanium for pre-metal contact at source and drain and pre-high K at channel
US10083818B2 (en) 2014-09-24 2018-09-25 Applied Materials, Inc. Auto frequency tuned remote plasma source
US9478434B2 (en) 2014-09-24 2016-10-25 Applied Materials, Inc. Chlorine-based hardmask removal
JP5764246B1 (ja) 2014-09-24 2015-08-19 株式会社日立国際電気 基板処理装置、ガス導入シャフト及びガス供給プレート
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
CN105448737A (zh) 2014-09-30 2016-03-30 联华电子股份有限公司 用以形成硅凹槽的蚀刻制作工艺方法与鳍式场效晶体管
US20160099173A1 (en) 2014-10-03 2016-04-07 Applied Materials, Inc. Methods for etching a barrier layer for an interconnection structure for semiconductor applications
US10407771B2 (en) 2014-10-06 2019-09-10 Applied Materials, Inc. Atomic layer deposition chamber with thermal lid
US9240315B1 (en) 2014-10-10 2016-01-19 Applied Materials, Inc. CVD oxide surface pre-conditioning by inductively coupled O2 plasma
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
JP6789932B2 (ja) 2014-10-17 2020-11-25 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 調整可能ガスフロー制御のためのガス分離器を含むガス供給配送配置
US10008404B2 (en) 2014-10-17 2018-06-26 Applied Materials, Inc. Electrostatic chuck assembly for high temperature processes
US9652567B2 (en) 2014-10-20 2017-05-16 Lam Research Corporation System, method and apparatus for improving accuracy of RF transmission models for selected portions of an RF transmission path
US9825051B2 (en) 2014-10-22 2017-11-21 Sandisk Technologies Llc Three dimensional NAND device containing fluorine doped layer and method of making thereof
US9508529B2 (en) 2014-10-23 2016-11-29 Lam Research Corporation System, method and apparatus for RF power compensation in a plasma processing system
US10102321B2 (en) 2014-10-24 2018-10-16 Lam Research Corporation System, method and apparatus for refining radio frequency transmission system models
US9202708B1 (en) 2014-10-24 2015-12-01 Applied Materials, Inc. Doped silicon oxide etch
US9368369B2 (en) 2014-11-06 2016-06-14 Applied Materials, Inc. Methods for forming a self-aligned contact via selective lateral etch
US9419135B2 (en) 2014-11-13 2016-08-16 Sandisk Technologies Llc Three dimensional NAND device having reduced wafer bowing and method of making thereof
US9466494B2 (en) 2014-11-18 2016-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Selective growth for high-aspect ration metal fill
US20160148813A1 (en) * 2014-11-25 2016-05-26 Lam Research Corporation Gas injection method for uniformly processing a semiconductor substrate in a semiconductor substrate processing apparatus
US9799509B2 (en) 2014-11-26 2017-10-24 Asm Ip Holding B.V. Cyclic aluminum oxynitride deposition
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
JP6320282B2 (ja) 2014-12-05 2018-05-09 東京エレクトロン株式会社 エッチング方法
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US9951421B2 (en) * 2014-12-10 2018-04-24 Lam Research Corporation Inlet for effective mixing and purging
US10781518B2 (en) 2014-12-11 2020-09-22 Applied Materials, Inc. Gas cooled electrostatic chuck (ESC) having a gas channel formed therein and coupled to a gas box on both ends of the gas channel
US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
US20160181116A1 (en) 2014-12-18 2016-06-23 Lam Research Corporation Selective nitride etch
US9396961B2 (en) 2014-12-22 2016-07-19 Lam Research Corporation Integrated etch/clean for dielectric etch applications
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US10134750B2 (en) 2014-12-30 2018-11-20 Toshiba Memory Corporation Stacked type semiconductor memory device and method for manufacturing the same
US9431268B2 (en) 2015-01-05 2016-08-30 Lam Research Corporation Isotropic atomic layer etch for silicon and germanium oxides
US9633867B2 (en) 2015-01-05 2017-04-25 Lam Research Corporation Method and apparatus for anisotropic tungsten etching
US9425041B2 (en) 2015-01-06 2016-08-23 Lam Research Corporation Isotropic atomic layer etch for silicon oxides using no activation
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US9779919B2 (en) 2015-01-09 2017-10-03 Hitachi High-Technologies Corporation Plasma processing apparatus and plasma processing method
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
JP2016134530A (ja) 2015-01-20 2016-07-25 株式会社東芝 加工制御装置、加工制御プログラムおよび加工制御方法
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US10354860B2 (en) 2015-01-29 2019-07-16 Versum Materials Us, Llc Method and precursors for manufacturing 3D devices
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160237570A1 (en) 2015-02-13 2016-08-18 Applied Materials, Inc. Gas delivery apparatus for process equipment
JP6396822B2 (ja) 2015-02-16 2018-09-26 東京エレクトロン株式会社 プラズマ処理装置のサセプタの電位を制御する方法
US9275834B1 (en) 2015-02-20 2016-03-01 Applied Materials, Inc. Selective titanium nitride etch
US9343358B1 (en) 2015-02-23 2016-05-17 Sandisk Technologies Inc. Three-dimensional memory device with stress compensation layer within a word line stack
WO2016135849A1 (ja) 2015-02-24 2016-09-01 株式会社 東芝 半導体記憶装置及びその製造方法
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
TWI670749B (zh) 2015-03-13 2019-09-01 美商應用材料股份有限公司 耦接至工藝腔室的電漿源
US9478433B1 (en) 2015-03-30 2016-10-25 Applied Materials, Inc. Cyclic spacer etching process with improved profile control
US9502238B2 (en) 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
US20160307772A1 (en) 2015-04-15 2016-10-20 Applied Materials, Inc. Spacer formation process with flat top profile
KR102452593B1 (ko) 2015-04-15 2022-10-11 삼성전자주식회사 반도체 장치의 제조 방법
US10049862B2 (en) 2015-04-17 2018-08-14 Lam Research Corporation Chamber with vertical support stem for symmetric conductance and RF delivery
US9576815B2 (en) 2015-04-17 2017-02-21 Applied Materials, Inc. Gas-phase silicon nitride selective etch
US9870899B2 (en) 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
US9576788B2 (en) 2015-04-24 2017-02-21 Applied Materials, Inc. Cleaning high aspect ratio vias
US10253412B2 (en) * 2015-05-22 2019-04-09 Lam Research Corporation Deposition apparatus including edge plenum showerhead assembly
JP6295439B2 (ja) 2015-06-02 2018-03-20 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及び方法、電子デバイスの製造方法
WO2016194211A1 (ja) 2015-06-04 2016-12-08 株式会社 東芝 半導体記憶装置及びその製造方法
US9449843B1 (en) 2015-06-09 2016-09-20 Applied Materials, Inc. Selectively etching metals and metal nitrides conformally
JP2017017277A (ja) 2015-07-06 2017-01-19 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
US9659791B2 (en) 2015-07-16 2017-05-23 Applied Materials, Inc. Metal removal with reduced surface roughness
US11473826B2 (en) 2015-07-27 2022-10-18 Mitegen, Llc Cryogenic cooling apparatus, methods, and applications
US9564341B1 (en) 2015-08-04 2017-02-07 Applied Materials, Inc. Gas-phase silicon oxide selective etch
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US9620376B2 (en) 2015-08-19 2017-04-11 Lam Research Corporation Self limiting lateral atomic layer etch
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US9659788B2 (en) 2015-08-31 2017-05-23 American Air Liquide, Inc. Nitrogen-containing compounds for etching semiconductor structures
US10147736B2 (en) 2015-09-03 2018-12-04 Toshiba Memory Corporation Semiconductor memory device and method for manufacturing same
US9837286B2 (en) 2015-09-04 2017-12-05 Lam Research Corporation Systems and methods for selectively etching tungsten in a downstream reactor
US9564338B1 (en) 2015-09-08 2017-02-07 Applied Materials, Inc. Silicon-selective removal
US9412752B1 (en) 2015-09-22 2016-08-09 Macronix International Co., Ltd. Reference line and bit line structure for 3D memory
US9460959B1 (en) 2015-10-02 2016-10-04 Applied Materials, Inc. Methods for pre-cleaning conductive interconnect structures
US9853101B2 (en) 2015-10-07 2017-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Strained nanowire CMOS device and method of forming
WO2017062087A1 (en) 2015-10-08 2017-04-13 Applied Materials, Inc. Showerhead with reduced backside plasma ignition
US10192751B2 (en) 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
US20170133202A1 (en) 2015-11-09 2017-05-11 Lam Research Corporation Computer addressable plasma density modification for etch and deposition processes
JP2017098478A (ja) 2015-11-27 2017-06-01 東京エレクトロン株式会社 エッチング方法
US10043636B2 (en) 2015-12-10 2018-08-07 Lam Research Corporation Apparatuses and methods for avoiding electrical breakdown from RF terminal to adjacent non-RF terminal
CN108292602B (zh) 2015-12-18 2023-08-18 应用材料公司 清洁方法
US9831097B2 (en) 2015-12-18 2017-11-28 Applied Materials, Inc. Methods for selective etching of a silicon material using HF gas without nitrogen etchants
US20170178899A1 (en) 2015-12-18 2017-06-22 Lam Research Corporation Directional deposition on patterned structures
CN108475640B (zh) 2016-01-20 2023-06-06 应用材料公司 用于侧向硬模凹槽减小的混合碳硬模
US10074730B2 (en) 2016-01-28 2018-09-11 International Business Machines Corporation Forming stacked nanowire semiconductor device
US10147588B2 (en) 2016-02-12 2018-12-04 Lam Research Corporation System and method for increasing electron density levels in a plasma of a substrate processing system
TWI689619B (zh) 2016-04-01 2020-04-01 美商應用材料股份有限公司 用於提供均勻流動的氣體的設備及方法
KR102649369B1 (ko) 2016-04-11 2024-03-21 삼성전자주식회사 반도체 소자 및 그 제조 방법
WO2017184223A1 (en) 2016-04-22 2017-10-26 Applied Materials, Inc. Substrate support pedestal having plasma confinement features
US10269566B2 (en) 2016-04-29 2019-04-23 Lam Research Corporation Etching substrates using ale and selective deposition
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
GB201609119D0 (en) 2016-05-24 2016-07-06 Spts Technologies Ltd A method of cleaning a plasma processing module
US10662527B2 (en) 2016-06-01 2020-05-26 Asm Ip Holding B.V. Manifolds for uniform vapor deposition
US9812462B1 (en) 2016-06-07 2017-11-07 Sandisk Technologies Llc Memory hole size variation in a 3D stacked memory
JP6792786B2 (ja) 2016-06-20 2020-12-02 東京エレクトロン株式会社 ガス混合装置および基板処理装置
US9978768B2 (en) 2016-06-29 2018-05-22 Sandisk Technologies Llc Method of making three-dimensional semiconductor memory device having laterally undulating memory films
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10522377B2 (en) 2016-07-01 2019-12-31 Lam Research Corporation System and method for substrate support feed-forward temperature control based on RF power
US20180025900A1 (en) 2016-07-22 2018-01-25 Applied Materials, Inc. Alkali metal and alkali earth metal reduction
US10083961B2 (en) 2016-09-07 2018-09-25 International Business Machines Corporation Gate cut with integrated etch stop layer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
JP2018046185A (ja) 2016-09-15 2018-03-22 東京エレクトロン株式会社 酸化シリコン及び窒化シリコンを互いに選択的にエッチングする方法
WO2018052477A2 (en) 2016-09-15 2018-03-22 Applied Materials, Inc. An integrated method for wafer outgassing reduction
US20180080124A1 (en) 2016-09-19 2018-03-22 Applied Materials, Inc. Methods and systems for thermal ale and ald
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US9960068B1 (en) 2016-12-02 2018-05-01 Lam Research Corporation Moment cancelling pad raising mechanism in wafer positioning pedestal for semiconductor processing
JP6731549B2 (ja) 2016-10-28 2020-07-29 シグニファイ ホールディング ビー ヴィＳｉｇｎｉｆｙ Ｈｏｌｄｉｎｇ Ｂ．Ｖ． 照明のモニタリング
KR102633031B1 (ko) 2016-11-04 2024-02-05 에스케이하이닉스 주식회사 반도체 메모리 소자
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10164042B2 (en) 2016-11-29 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10141328B2 (en) 2016-12-15 2018-11-27 Macronix International Co., Ltd. Three dimensional memory device and method for fabricating the same
US10692880B2 (en) 2016-12-27 2020-06-23 Applied Materials, Inc. 3D NAND high aspect ratio structure etch
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10123065B2 (en) 2016-12-30 2018-11-06 Mora Global, Inc. Digital video file generation
US9960045B1 (en) 2017-02-02 2018-05-01 Applied Materials, Inc. Charge-trap layer separation and word-line isolation for enhanced 3-D NAND structure
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US9779956B1 (en) 2017-02-06 2017-10-03 Lam Research Corporation Hydrogen activated atomic layer etching
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10208383B2 (en) 2017-02-09 2019-02-19 The Regents Of The University Of Colorado, A Body Corporate Atomic layer etching processes using sequential, self-limiting thermal reactions comprising oxidation and fluorination
US20180261686A1 (en) 2017-03-13 2018-09-13 Applied Materials, Inc. Transistor sidewall formation process
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US11049719B2 (en) 2017-08-30 2021-06-29 Applied Materials, Inc. Epitaxy system integrated with high selectivity oxide removal and high temperature contaminant removal
JP6883495B2 (ja) 2017-09-04 2021-06-09 東京エレクトロン株式会社 エッチング方法
US10903054B2 (en) * 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070045513A (ko) * 2005-10-27 2007-05-02 주식회사 래디언테크 배플 및 이를 구비한 플라즈마 처리 장치
JP2008227064A (ja) * 2007-03-12 2008-09-25 Tokyo Electron Ltd 基板処理装置及び電極構造体
TW201243941A (en) * 2011-03-14 2012-11-01 Applied Materials Inc Methods for etch of metal and metal-oxide films
KR20150115780A (ko) * 2013-02-08 2015-10-14 어플라이드 머티어리얼스, 인코포레이티드 다수의 플라즈마 구성들을 갖는 반도체 프로세싱 시스템들
TW201742109A (zh) * 2016-05-20 2017-12-01 應用材料股份有限公司 用於半導體處理的氣體分配噴頭

Also Published As

Publication number Publication date
TW201928109A (zh) 2019-07-16
CN111492469B (zh) 2023-11-10
US11581165B2 (en) 2023-02-14
KR20230058530A (ko) 2023-05-03
US20190189401A1 (en) 2019-06-20
US20210265134A1 (en) 2021-08-26
JP7464642B2 (ja) 2024-04-09
KR102656203B1 (ko) 2024-04-11
JP2024099523A (ja) 2024-07-25
KR20240051292A (ko) 2024-04-19
JP2021507521A (ja) 2021-02-22
US10903054B2 (en) 2021-01-26
CN111492469A (zh) 2020-08-04
KR20200089340A (ko) 2020-07-24
JP7048744B2 (ja) 2022-04-05
WO2019126198A1 (en) 2019-06-27
TW202131431A (zh) 2021-08-16
JP2022095720A (ja) 2022-06-28
US20230197416A1 (en) 2023-06-22
KR20220025940A (ko) 2022-03-03
TWI721342B (zh) 2021-03-11
KR102366323B1 (ko) 2022-02-23

Similar Documents

Publication Publication Date Title
TWI836183B (zh) 多區域氣體分配系統及方法
US11101136B2 (en) Process window widening using coated parts in plasma etch processes
US10424464B2 (en) Oxide etch selectivity systems and methods
US10424485B2 (en) Enhanced etching processes using remote plasma sources
US9449845B2 (en) Selective titanium nitride etching
US10256079B2 (en) Semiconductor processing systems having multiple plasma configurations
US11328909B2 (en) Chamber conditioning and removal processes