JP6751448B2 - 半導体処理用のガス分配シャワーヘッド - Google Patents
半導体処理用のガス分配シャワーヘッド Download PDFInfo
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- 238000009826 distribution Methods 0.000 title claims description 193
- 239000004065 semiconductor Substances 0.000 title description 8
- 230000009977 dual effect Effects 0.000 claims description 47
- 238000005192 partition Methods 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 25
- 229920006169 Perfluoroelastomer Polymers 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 357
- 239000000758 substrate Substances 0.000 description 19
- 239000002243 precursor Substances 0.000 description 6
- 238000009827 uniform distribution Methods 0.000 description 5
- 238000000429 assembly Methods 0.000 description 4
- 230000000712 assembly Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000003252 repetitive effect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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Description
Claims (13)
- ガス分配アセンブリであって、
ガス分配プレートであって、
少なくとも1つのガス供給口、
前記ガス供給口に作動可能に接続された多様に分かれる経路を形成する複数のチャネル、及び
前記複数のチャネルの内部に且つ前記ガス分配プレートを通るように配置された第1の複数のガス孔を備えたガス分配プレートと、
前記ガス分配プレートに連結されたブロッカプレートであって、
第2の複数のガス孔を備えた内側ゾーン、
第3の複数のガス孔を備えた外側ゾーン、及び
前記内側ゾーンを前記外側ゾーンから分離する第1の隔壁を備えたブロッカプレートと、
前記ブロッカプレートに連結されたデュアルゾーンシャワーヘッドであって、
第4の複数のガス孔を備えた内側ゾーン、
第5の複数のガス孔を備えた外側ゾーン、及び
前記内側ゾーンと前記外側ゾーンとの間に配置されたトレンチであって、前記デュアルゾーンシャワーヘッドの前記内側ゾーンが、前記デュアルゾーンシャワーヘッドの前記外側ゾーンから物理的に分離されるよう、前記第1の隔壁を受け入れるように構成されたトレンチを備えたデュアルゾーンシャワーヘッドと
を備え、前記第2の複数のガス孔及び前記第4の複数のガス孔が、同軸流を避けるためにパターン化され、前記第3の複数のガス孔及び前記第5の複数のガス孔が、同軸流を避けるためにパターン化されている、ガス分配アセンブリ。 - 前記デュアルゾーンシャワーヘッドの前記内側ゾーンが、前記ブロッカプレートの前記内側ゾーンと位置合わせされ、前記デュアルゾーンシャワーヘッドの前記外側ゾーンが、前記ブロッカプレートの前記外側ゾーンと位置合わせされる、請求項1に記載のガス分配アセンブリ。
- 前記複数のチャネルが、前記ガス供給口の周りで対称的に分散され、前記第1の複数のガス孔が、少なくとも8つのガス孔である、請求項1に記載のガス分配アセンブリ。
- 前記ガス分配プレートと前記ブロッカプレートの前記外側ゾーンとの間に配置された第1のプレナム、及び
前記ガス分配プレートと前記ブロッカプレートの前記内側ゾーンとの間に配置された第2のプレナム
をさらに備えている、請求項1に記載のガス分配アセンブリ。 - 前記デュアルゾーンシャワーヘッドと前記ブロッカプレートの前記外側ゾーンとの間に配置された第3のプレナム、及び
前記デュアルゾーンシャワーヘッドと前記ブロッカプレートの前記内側ゾーンとの間に配置された第4のプレナム
をさらに備えている、請求項1に記載のガス分配アセンブリ。 - 前記第1の隔壁と前記ガス分配プレートとの間に配置された第1のOリング、及び
前記第1の隔壁と前記デュアルゾーンシャワーヘッドとの間に配置された第2のOリング
をさらに備え、前記第1のOリング及び前記第2のOリングが、パーフロロエラストマー材料を含む、請求項1に記載のガス分配アセンブリ。 - 前記ガス分配プレート、前記ブロッカプレート、又は前記デュアルゾーンシャワーヘッドが、アルミニウム材料、セラミック材料、誘電材料、石英材料、又はステンレス鋼材料を含む、請求項1に記載のガス分配アセンブリ。
- 前記第2の複数のガス孔、前記第3の複数のガス孔、前記第4の複数のガス孔、及び前記第5の複数のガス孔が、個々にそれぞれ均一幅を有する、請求項1に記載のガス分配アセンブリ。
- 前記第2の複数のガス孔、前記第3の複数のガス孔、前記第4の複数のガス孔、及び前記第5の複数のガス孔が、個々にそれぞれ可変幅を有する、請求項1に記載のガス分配アセンブリ。
- ガス分配アセンブリであって、
ガス分配プレートであって、
少なくとも1つのガス供給口、
前記ガス供給口に作動可能に接続された多様に分かれる経路を形成する複数のチャネル、及び
前記複数のチャネルの内部に且つ前記ガス分配プレートを通るように配置された第1の複数のガス孔を備えたガス分配プレートと、
前記ガス分配プレートに連結されたブロッカプレートであって、
第2の複数のガス孔を備えた内側ゾーン、
第3の複数のガス孔を備えた外側ゾーン、及び
前記内側ゾーンを前記外側ゾーンから分離する第1の隔壁を備えたブロッカプレートと、
前記ブロッカプレートに連結されたデュアルゾーンシャワーヘッドであって、
第4の複数のガス孔を備えた内側ゾーン、
第5の複数のガス孔を備えた外側ゾーン、及び
前記内側ゾーンと前記外側ゾーンとの間に配置されたトレンチであって、前記デュアルゾーンシャワーヘッドの前記内側ゾーンが、前記デュアルゾーンシャワーヘッドの前記外側ゾーンから物理的に分離されるよう、前記第1の隔壁を受け入れるように構成されたトレンチを備えたデュアルゾーンシャワーヘッドと
前記ガス分配プレートに作動可能に連結されたミキシングマニホールドであって、
第1の部分及び第2の部分を含む複数のミキシングチャネルであって、前記第1の部分と前記第2の部分との間に配置されたチョークチャネルの直径が、前記第1の部分又は前記第2の部分の任意の直径より短い、複数のミキシングチャネルを備えたミキシングマニホールドと
を備えているガス分配アセンブリ。 - 前記第2の複数のガス孔及び前記第4の複数のガス孔が、同軸流を避けるためにパターン化され、前記第3の複数のガス孔及び前記第5の複数のガス孔が、同軸流を避けるためにパターン化されている、請求項10に記載のガス分配アセンブリ。
- 前記ガス分配プレートと前記ブロッカプレートの前記外側ゾーンとの間に配置された第1のプレナム、
前記ガス分配プレートと前記ブロッカプレートの前記内側ゾーンとの間に配置された第2のプレナム、
前記デュアルゾーンシャワーヘッドと前記ブロッカプレートの前記外側ゾーンとの間に配置された第3のプレナム、及び
前記デュアルゾーンシャワーヘッドと前記ブロッカプレートの前記内側ゾーンとの間に配置された第4のプレナム
をさらに備えている、請求項10に記載のガス分配アセンブリ。 - ガス分配アセンブリであって、
第1の部分及び第2の部分を含む複数のミキシングチャネルであって、前記第1の部分と前記第2の部分との間に配置されたチョークチャネルの直径が、前記第1の部分又は前記第2の部分の任意の直径より短い、複数のミキシングチャネルを備えたミキシングマニホールドと
前記ミキシングマニホールドに連結されたガス分配プレートであって、
少なくとも1つのガス供給口、
前記ガス供給口に作動可能に接続された多様に分かれる経路を形成する複数のチャネル、及び
前記複数のチャネルの内部に且つ前記ガス分配プレートを通るように配置された第1の複数のガス孔を備えたガス分配プレートと、
前記ガス分配プレートに連結されたブロッカプレートであって、
第2の複数のガス孔を備えた内側ゾーン、
第3の複数のガス孔を備えた外側ゾーン、及び
前記内側ゾーンを前記外側ゾーンから分離する第1の隔壁を備えたブロッカプレートと、
前記ブロッカプレートに連結されたデュアルゾーンシャワーヘッドであって、
第4の複数のガス孔を備えた内側ゾーン、
第5の複数のガス孔を備えた外側ゾーン、及び
前記内側ゾーンと前記外側ゾーンとの間に配置されたトレンチであって、前記デュアルゾーンシャワーヘッドの前記内側ゾーンが、前記デュアルゾーンシャワーヘッドの前記外側ゾーンから物理的に分離されるよう、前記第1の隔壁を受け入れるように構成されたトレンチを備えたデュアルゾーンシャワーヘッドと
を備え、前記第2の複数のガス孔及び前記第4の複数のガス孔が、同軸流を避けるためにパターン化され、前記第3の複数のガス孔及び前記第5の複数のガス孔が、同軸流を避けるためにパターン化されている、ガス分配アセンブリ。
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