TWI783169B - 選擇性材料移除 - Google Patents
選擇性材料移除 Download PDFInfo
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- TWI783169B TWI783169B TW108131171A TW108131171A TWI783169B TW I783169 B TWI783169 B TW I783169B TW 108131171 A TW108131171 A TW 108131171A TW 108131171 A TW108131171 A TW 108131171A TW I783169 B TWI783169 B TW I783169B
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- 239000000463 material Substances 0.000 title claims description 38
- 239000002243 precursor Substances 0.000 claims abstract description 245
- 238000000034 method Methods 0.000 claims abstract description 152
- 238000012545 processing Methods 0.000 claims abstract description 134
- 239000001257 hydrogen Substances 0.000 claims abstract description 102
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 102
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 100
- 239000000758 substrate Substances 0.000 claims abstract description 75
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000011737 fluorine Substances 0.000 claims abstract description 35
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 34
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 115
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 115
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 68
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 67
- 238000005530 etching Methods 0.000 claims description 61
- 230000008569 process Effects 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 15
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 13
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 abstract description 15
- 229910052736 halogen Inorganic materials 0.000 description 55
- 150000002367 halogens Chemical class 0.000 description 55
- 238000005516 engineering process Methods 0.000 description 28
- 238000002156 mixing Methods 0.000 description 28
- 239000007789 gas Substances 0.000 description 14
- 238000000151 deposition Methods 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 11
- 230000001629 suppression Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000000231 atomic layer deposition Methods 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 239000006227 byproduct Substances 0.000 description 7
- 239000012530 fluid Substances 0.000 description 6
- -1 ammonium fluorosilicate Chemical compound 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000011068 loading method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 2
- 210000004180 plasmocyte Anatomy 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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Abstract
用於移除氮化物的示例性方法可包括使含氟前驅物流動到半導體處理腔室的遠端電漿區域中。方法可進一步包括在遠端電漿區域內形成電漿以產生含氟前驅物的電漿流出物以及使電漿流出物流動到容納基板的半導體處理器腔室的處理區域中。基板可包括高深寬比特徵。基板可進一步包括暴露的氮化物的區域及暴露的氧化物的區域。方法可進一步包括將含氫前驅物提供到處理區域以產生蝕刻劑。可用蝕刻劑移除暴露的氮化物的至少一部分。
Description
相關申請案之交互參照:此申請案主張於2018年9月21日提交的美國專利申請案第16/138,507號的優先權權益,此申請案的全部內容藉此出於所有目的以引用方式併入本文中。
本技術係關於半導體製程及設備。更具體而言,本技術係關於氮化物及/或氧化物材料的選擇性蝕刻。
積體電路可能由在基板表面上產生複雜圖案化之材料層的製程來製造。在基板上產生圖案化材料需要用於移除暴露材料的受控方法。出於各種目的使用化學蝕刻,包括將光阻劑中的圖案轉移至下層中、薄化層或薄化已經在表面上存在的特徵的橫向尺寸。通常期望具有與另一種材料相比更快速地蝕刻一種材料的蝕刻製程,從而促進例如圖案轉移製程。認為此蝕刻製程對第一材料具有選擇性。由於材料、電路及製程的多樣性,已經開發對各種材料具有選擇性的蝕刻製程。
蝕刻製程可基於在製程中使用的材料而被稱為濕式或乾式。與其他介電質及材料相比,濕式HF蝕刻優先移除氧化矽。然而,濕式製程可具有穿透一些受限溝槽的困難,並且有時可亦使剩餘材料變形。在基板處理區域內形成的局部電漿中產生的乾式蝕刻可以穿透更受限的溝槽,並且展現脆弱剩餘結構的較少形變。然而,局部電漿可經由產生電弧以及該等電弧的放電而破壞基板。
因此,存在對可以用於產生高品質元件及結構的經改進系統及方法的需要。該等及其他需要由本技術解決。
用於選擇性蝕刻氮化物材料的示例性方法可包括使含氟前驅物流動到半導體處理腔室的遠端電漿區域中。方法可進一步包括在遠端電漿區域內形成電漿以產生含氟前驅物的電漿流出物、以及使電漿流出物流動到半導體處理腔室的處理區域中。處理區域可容納基板。基板可包括高深寬比特徵。基板可進一步包括暴露的氮化矽的區域及暴露的氧化物的區域。方法亦可包括將含氫前驅物提供到半導體處理腔室的處理區域中。方法可進一步包括相對於暴露的氧化物選擇性移除暴露的氮化矽的至少一部分。
在一些實施例中,當被提供到處理區域時,含氫前驅物可繞過遠端電漿區域。在一些實施例中,含氟前驅物可包括三氟化氮。在一些實施例中,含氫前驅物可包括雙原子氫或氟化氫中的一個。在一些實施例中,含氫前驅物可係無氧的。在一些實施例中,含氟前驅物的流動速率與含氫前驅物的流動速率的比率可在約1:10與約2:1之間變化。在一些實施例中,在蝕刻方法期間,基板溫度可維持在約0℃與約150℃之間。在一些實施例中,在半導體處理腔室內的壓力可維持在約0.5 Torr與約50 Torr之間。在一些實施例中,蝕刻方法可包括大於或約500:1的氮化矽相對於氧化物的選擇性。在一些實施例中,蝕刻方法可產生暴露的氮化矽的凹陷側壁,並且凹陷側壁可包括實質上筆直的凹陷輪廓。在一些實施例中,暴露的氧化物可包括氧化矽。在一些實施例中,基板可進一步包括暴露矽的區域。可進一步相對於暴露矽選擇性移除暴露的氮化矽的部分。
用於選擇性蝕刻氮化物材料的進一步示例性方法可包括使含氟前驅物流動到半導體處理腔室的遠端電漿區域中。方法亦可包括在遠端電漿區域內形成電漿以產生含氟前驅物的電漿流出物。方法可進一步包括使電漿流出物流動到半導體處理腔室的處理區域中。處理區域可容納基板。基板可包括在兩個垂直柱之間形成的溝槽。兩個垂直柱的每一個可包括氮化矽及氧化物材料的交替層。在一些實施例中,方法亦可包括當使含氟前驅物流動到處理區域中時,將含氫前驅物提供到處理區域以產生蝕刻劑。方法可進一步包括用蝕刻劑從氮化矽的每個層選擇性移除氮化矽的至少一部分。
在一些實施例中,在蝕刻方法期間,基板溫度可維持在約30℃與約85℃之間。在一些實施例中,在半導體處理腔室內的壓力可維持在約1 Torr與約5 Torr之間。在一些實施例中,含氟前驅物的流動速率與含氫前驅物的流動速率的比率可大於或約1:2。在一些實施例中,基板可包括暴露矽的區域。可相對於暴露矽選擇性移除來自氮化矽的每個層的氮化矽的部分。在一些實施例中,氧化物材料可包括氧化矽。
用於選擇性蝕刻氮化物材料的進一步示例性方法可包括使含氟前驅物流動到半導體處理腔室的遠端電漿區域中。方法亦可包括在遠端電漿區域內形成電漿以產生含氟前驅物的電漿流出物。方法可進一步包括使含氫前驅物流動到半導體處理腔室的遠端電漿區域中。方法亦可包括在遠端電漿區域內形成電漿以產生含氫前驅物的電漿流出物。方法可進一步包括使含氟前驅物的電漿流出物及含氫前驅物的電漿流出物流動到半導體處理腔室的處理區域中。處理區域可容納基板。基板可包括高深寬比特徵。基板可進一步包括暴露的氮化矽的區域及暴露的氧化矽的區域。方法可進一步包括相對於暴露氧化矽來選擇性移除暴露的氮化矽的至少一部分。在一些實施例中,基板可進一步包括暴露矽的區域,並且其中可相對於暴露矽移除暴露的氮化矽的部分。
本技術可提供優於習知技術的數個益處。蝕刻副產物可係揮發性的並且因此可以簡單地移除。此外,本技術可允許調諧蝕刻的凹陷輪廓以獲得凸起、筆直及/或凹入的凹陷輪廓的能力。與可使用含氧化物前驅物的蝕刻方法相比,本技術亦可達成非常高的選擇性。結合下文描述及附圖更詳細描述此等及其他實施例,以及眾多其優點及特徵。
對行動計算及資料中心的增長需求繼續驅使對高容量、高效能NAND快閃技術的需要。利用接近實際比例極限的平面NAND,3D NAND正在替換2D NAND以用於記憶體元件。製造3D NAND結構可需要沉積兩種或多種材料的交替層,諸如氧化矽及氮化矽的交替層,其中堆疊層的總厚度高達若干微米。可蝕刻此等堆疊層以產生溝槽或接觸孔。此外,可從溝槽選擇性蝕刻此等兩種交替材料的一種或其至少一部分以形成記憶體單元。由於3D NAND結構在所形成的數個單元中增長,溝槽及其他結構的深寬比顯著增加。由於溝槽的高深寬比,習知濕式方法在特徵內從頂部至底部均勻地蝕刻材料並且完全移除在特徵內部形成的殘留副產物係挑戰性的。此外,使用濕式製程蝕刻的材料(諸如氮化矽)的凹陷輪廓可以係凸起的並且不可以調諧或調整。在一些應用中,可能期望相對筆直的凹陷輪廓。亦已經研發使用NF3
及O2
的乾式蝕刻來用於相對於氧化物選擇性蝕刻氮化物。然而,藉由習知乾式蝕刻獲得的選擇性可能是相對低的。
本技術藉由執行乾式蝕刻製程克服此等問題,該乾式蝕刻製程允許在具有高深寬比的溝槽內部均勻的頂部到底部的氮化物材料蝕刻。蝕刻副產物可係揮發性的並且因此可以簡單地移除,從而如與習知濕式方法相比,實質上不餘留或餘留較少的殘留副產物。另外,本技術可提供調諧蝕刻的凹陷輪廓以獲得凸起、筆直、及/或凹入的凹陷輪廓的能力。與可使用含氧化物前驅物的蝕刻方法相比,本技術亦可達成非常高的選擇性。
儘管剩餘揭示內容將常規地確認利用所揭示技術的具體蝕刻製程,將容易理解系統及方法等效地應用於可在所描述的腔室中發生的沉積及清潔製程。由此,技術不應當被認為限制為與蝕刻製程一起使用或用於單獨的腔室。此外,儘管將示例性腔室描述為提供本技術的基礎,將理解本技術可以應用於幾乎任何半導體處理腔室,該半導體處理腔室可允許所描述的單腔室操作。
第 1 圖
圖示了根據實施例的沉積、蝕刻、烘焙、及固化腔室的處理系統100的一個實施例的俯視平面圖。在圖式中,一對前開式晶圓盒(front opening unified pod; FOUP) 102供應各種大小的基板,該等基板由機器人臂104接收並且放置到低壓固持區域106中,然後放置到基板處理腔室108a-f的一個中,在串列部分109a-c中定位。第二機器人臂110可用於將基板晶圓從固持區域106運輸到基板處理腔室108a-f並且返回。每個基板處理腔室108a-f可以經配備以執行多個基板處理操作,除了循環層沉積(cyclical layer deposition; CLD)、原子層沉積(atomic layer deposition; ALD)、化學氣相沉積(chemical vapor deposition; CVD)、物理氣相沉積(physical vapor deposition; PVD)、蝕刻、預清潔、除氣、定向、及其他基板製程之外,包括本文描述的乾式蝕刻製程。
基板處理腔室108a-f可包括用於在基板晶圓上沉積、退火、固化及/或蝕刻介電膜的一或多個系統部件。在一個構造中,兩對處理腔室(例如,108c-d及108e-f)可用於在基板上沉積介電材料,並且第三對處理腔室(例如,108a-b)可用於蝕刻沉積的介電質。在另一構造中,所有三對腔室(例如,108a-f)可經設置為在基板上蝕刻介電膜。所描述的任何一或多個製程可在與不同實施例中圖示的製造系統分離的腔室中執行。將瞭解,由系統100預期用於介電膜的沉積、蝕刻、退火、及固化腔室的額外構造。
第 2 圖
圖示了根據本技術的實施例的示例性處理系統200的示意性橫截面圖。系統200可包括處理腔室205及遠端電漿單元210。遠端電漿單元210可與具有一或多個部件的處理腔室205耦接。遠端電漿單元210可與遠端電漿單元配接器215、隔離器220、壓板225、及入口配接器230、擴散器235、或混合歧管240中的一或多個耦接。混合歧管240可與處理腔室205的頂部耦接,並且可與到處理腔室205的入口耦接。
遠端電漿單元配接器215可在第一端211處與遠端電漿單元210耦接,並且可在與第一端211相對的第二端212處與隔離器220耦接。可穿過遠端電漿單元配接器215界定一或多個通道。可在第一端211處界定到通道213的開口或通口。通道213可居中界定在遠端電漿單元配接器215內,並且其可藉由與穿過遠端電漿單元配接器215的中心軸正交的方向上的第一橫截面表面積而表徵,該方向可係在從遠端電漿單元210的流動方向上。通道213的直徑可等於從遠端電漿單元210的出口通口或與該出口通口一樣。通道213可藉由從第一端211到第二端212的長度而表徵。通道213可延伸穿過遠端電漿單元配接器215的整個長度、或與從第一端211到第二端212的長度相比較小的長度。例如,通道213可延伸小於從遠端電漿單元配接器215的第一端211到第二端212的長度的一半,通道213可延伸從第一端211到第二段212的長度的一半,通道213可延伸大於從第一端211到第二段212的長度的一半,或通道213可延伸從第一端211到第二段212的長度的約一半。
遠端電漿單元配接器215亦可界定一或多個溝槽214,該等溝槽界定在遠端電漿單元配接器215下面。溝槽214可係或包括在遠端電漿單元配接器215內界定的一或多個環形凹陷以允許放置O形環或彈性元件,這可允許與隔離器220耦接。
在實施例中,隔離器220可與遠端電漿單元配接器215的第二端212耦接。隔離器220可係或包括圍繞隔離器通道221的環形構件。隔離器通道221可在流過遠端電漿單元配接器215的方向上與中心軸軸向地對準。隔離器通道221可藉由在與流過隔離器220的方向正交的方向上的第二橫截面積表徵。第二橫截面積可等於、大於、或小於通道213的第一橫截面積。在實施例中,隔離器通道221可藉由一直徑表徵,該直徑大於、等於、或大約與穿過遠端電漿單元配接器215的通道213的直徑相同。
隔離器220可由與遠端電漿單元配接器215、混合歧管240、及/或任何其他腔室部件類似或不同的材料製成。在一些實施例中,儘管遠端電漿單元配接器215及混合歧管240可由鋁製成或包括鋁,包括鋁的氧化物、在一或多個表面上處理鋁、或一些其他材料,隔離器220可係或包括與其他腔室部件相比較低導熱性的材料。在一些實施例中,隔離器220可係或包括陶瓷、塑膠、或其他熱絕緣部件,該部件經設置為在遠端電漿單元210與腔室205之間提供熱斷裂。在操作期間,遠端電漿單元210可經冷卻或在相對於腔室205較低的溫度下操作,而腔室205可經加熱或在相對於遠端電漿單元210較的高溫度下操作。提供陶瓷或熱絕緣隔離器220可防止或限制在部件之間的熱、電氣、或其他干擾。
壓板225可與隔離器220耦接。在實施例中,壓板225可係或包括鋁或另一材料,並且在實施例中,壓板225可由與遠端電漿單元配接器215或混合歧管240類似或不同的材料製成或包括該材料。壓板225可界定穿過壓板225的中心孔223。中心孔223可藉由一漸縮形狀表徵,該漸縮形狀從靠近隔離器通道221的一部分到壓板225的相對側面穿過壓板225。靠近隔離器通道221的中心孔223的一部分可藉由與流動方向正交的橫截面積表徵,該橫截面積等於或類似於隔離器通道221的橫截面積。中心孔223可藉由跨壓板225的長度大於或約10%的漸縮百分比表徵,並且在實施例中可藉由大於或約20%、大於或約30%、大於或約40%、大於或約50%、大於或約60%、大於或約70%、大於或約80%、大於或約90%、大於或約100%、大於或約150%、大於或約200%、大於或約300%、或更大的漸縮百分比表徵。壓板225亦可界定一或多個溝槽224,該等溝槽界定在隔離器220下面。溝槽224可係或包括在壓板225內界定的一或多個環形凹陷,以允許放置O形環或彈性元件,這可允許與隔離器220耦接。
入口配接器230可在第一端226處與壓板225耦接,並且在與第一端226相對的第二端227處與擴散器235耦接。入口配接器230可界定中心通道228,該中心通道穿過入口配接器230界定。中心通道228可藉由第一部分229a及第二部分229b表徵。第一部分229a可從第一端226延伸到穿過入口配接器230的第一長度,其中中心通道228可過渡到第二部分229b,該第二部分可延伸到第二端227。第一部分229a可藉由第一橫截面積或直徑表徵,並且第二部分229b可藉由小於第一橫截面積或直徑的第二橫截面積或直徑表徵。在實施例中,第一部分229a的橫截面積或直徑可為第二部分229b的橫截面積或直徑的兩倍大,並且在實施例中可高達或大於約三倍大、大於或約4倍大、大於或約5倍大、大於或約6倍大、大於或約7倍大、大於或約8倍大、大於或約9倍大、大於或約10倍大、或更大。在實施例中,中心通道228可經設置為提供從遠端電漿單元210遞送的前驅物的電漿流出物,該等電漿流出物可穿過遠端電漿單元配接器215的通道213、隔離器220的隔離器通道221、及壓板225的中心孔223。
入口配接器230亦可界定一或多個第二通道231,該等第二通道可從第一部分229a下方延伸到第二端227或延伸穿過第二端227。第二通道231可藉由在與穿過入口配接器230的中心軸正交的方向上的第二橫截面表面積表徵。在實施例中第二橫截面表面積可小於第一部分229a的橫截面表面積,並且可大於第二部分229b的橫截面表面積或直徑。第二通道231可延伸到在第二端227處從入口配接器230的出口,並且可為從遠端電漿單元210交替地遞送的前驅物(諸如第一旁路前驅物)提供從配接器230的排出口(egress)。例如,第二通道231可從沿著入口配接器230的外表面(諸如側面)界定的第一通口232流體地進出,該入口配接器可繞過遠端電漿單元210。第一通口232可處於或低於沿著入口配接器230的長度的第一部分229a,並且可經設置為提供流體進入第二通道231。
第二通道231可穿過入口配接器230遞送前驅物並且將前驅物遞送出第二端227。第二通道231可界定在第一部分229a與第二端227之間的入口配接器230的區域中。在實施例中,第二通道231可能不從中心通道228進入。第二通道231可經設置為維持前驅物與從遠端電漿單元210遞送到中心通道228中的電漿流出物流體地隔離。第一旁路前驅物可能不接觸電漿流出物,直至穿過第二端227離開入口配接器230。第二通道231可包括在配接器230中界定的一或多個通道。第二通道231可居中地位於配接器230內,並且可與中心通道228相關聯。例如,在實施例中,第二通道231可同心地對準並且繞著中心通道228界定。在實施例中,第二通道231可係環形或圓柱形通道,該通道部分地延伸穿過入口配接器230的長度或垂直橫截面。在一些實施例中,第二通道231亦可係繞著中心通道228徑向地延伸的複數個通道。
入口配接器230亦可界定一或多個第三通道233,該等第三通道可從第一部分229a下方延伸到第二端227或延伸穿過第二端227,並且可從平分第一通口232的平面下方延伸。第三通道233可藉由在與穿過入口配接器230的中心軸正交的方向上的第三橫截面表面積表徵。在實施例中,第三橫截面表面積可小於第一部分229a的橫截面表面積,並且可大於第二部分229b的橫截面表面積或直徑。第三橫截面表面積亦可等於或類似於所示出的第一部分229a的橫截面表面積或直徑。例如,第三通道233的外徑可等同於第一部分229a的外徑,或可小於第一部分229a的外徑。第三通道233可延伸到在第二端227處從入口配接器230的出口,並且可為從遠端電漿單元210交替地遞送的前驅物(諸如第二旁路前驅物)提供從配接器230的排出口。例如,第三通道233可從沿著入口配接器230的外表面(諸如側面)界定的第二通口234流體地進入,該入口配接器可繞過遠端電漿單元210。第二通口234可位於入口配接器230的與第一通口232相對的側面或部分上。第二通口234可沿著入口配接器230的長度處於第一部分229a處或低於第一部分229a,並且可經設置為提供流體進入第三通道233。在實施例中,第二通口234亦可沿著入口配接器230的長度處於第一通口232處或低於的第一通口232。
第三通道233可穿過入口配接器230遞送第二旁路前驅物並且將第二旁路前驅物遞送出第二端227。第三通道233可界定在第一部分229a與第二端227之間的入口配接器230的區域中。在實施例中,第三通道233可能不從中心通道228進入。第三通道233可經設置為維持第二旁路前驅物與從遠端電漿單元210遞送到中心通道228中的電漿流出物流體地隔離,並且與穿過第一通口232遞送到第二通道231中的第一旁路前驅物流體地隔離。第二旁路前驅物可能不接觸電漿流出物或第一旁路前驅物,直至穿過第二端227離開入口配接器230。第三通道233可包括在配接器230中界定的一或多個通道。第三通道233可居中地位於配接器230內,並且可與中心通道228及第二通道231相關聯。例如,在實施例中,第三通道233可同心地對準並且繞著中心通道228界定,並且可同心地對準並且繞著第二通道231界定。在實施例中,第三通道233可係第二環形或圓柱形通道,該通道部分地延伸穿過入口配接器230的長度或垂直橫截面。在一些實施例中,第三通道233亦可係繞著中心通道228徑向延伸的複數個通道。
擴散器235可在入口配接器230與混合歧管240之間定位以維持流體地隔離穿過入口配接器230遞送的前驅物,直至進入混合歧管240。擴散器235可藉由一或多個通道表徵,諸如穿過擴散器235界定的圓柱形或環形通道。在實施例中,擴散器235可界定第一通道236或中心通道、第二通道237、及第三通道238。通道可藉由與入口配接器230的中心通道228、第二通道231、及第三通道233的第二部分229b類似的尺寸或直徑表徵。例如,每個通道可將入口配接器通道延伸到混合歧管240。第二通道237及第三通道238可各者係繞著第一通道236界定的環形通道,並且第一通道236、第二通道237、及第三通道238在實施例中可同心地對準,且穿過擴散器235界定。
擴散器235可額外界定繞著擴散器235的一或多個溝槽239。例如,擴散器235可在實施例中界定第一溝槽239a、第二溝槽239b、及第三溝槽239c,這可允許在入口配接器230與擴散器235之間放置O形環或彈性構件。每個溝槽239可在實施例中係環形溝槽,該環形溝槽徑向置於穿過擴散器235界定的一或多個通道外部。第一溝槽239a可從第一通道236向外徑向地定位,並且可在第一通道236與第二通道237之間定位。第二溝槽239b可從第二通道237向外徑向地定位,並且可在第二通道237與第三通道238之間定位。第三溝槽239c可從第三通道238徑向地向外定位。每個溝槽239的直徑可大於該溝槽與其相關聯並且其可從其外部徑向地定位的通道。溝槽可實現在入口配接器230與擴散器235之間改進的密封以確保維持前驅物在部件之間流體地隔離,並且在通道之間不發生洩漏。
混合歧管240可在第一端241處與擴散器235耦接,並且可在第二端242處與腔室205耦接。混合歧管240可在第一端241處界定入口243。入口243可提供從擴散器235的流體出口,並且入口243可藉由一直徑表徵,該直徑等於或大致與穿過擴散器235的第三通道238的直徑相同。入口243可界定穿過混合歧管240的通道244的一部分,並且通道244可由界定通道244的輪廓的一或多個部分構成。入口243可係在穿過混合歧管240的通道244的流動方向上的第一部分。入口243可藉由一長度表徵,該長度可小於在混合歧管240的流動方向上的長度的一半。在實施例中,入口243的長度亦可小於混合歧管240的長度的三分之一,並且可小於混合歧管240的長度的四分之一。入口243可從擴散器235接收每種前驅物,並且可允許混合前驅物,可維持該等前驅物流體隔離,直至遞送到混合歧管240。
入口243可延伸到通道244的第二部分,該第二部分可係或包括漸縮部分245。漸縮部分245可從等於或類似於入口243的直徑的第一直徑延伸到小於第一直徑的第二直徑。在一些實施例中,第二直徑可係大約或小於第一直徑的一半。在實施例中,漸縮部分245可藉由大於或約10%、大於或約20%、大於或約30%、大於或約40%、大於或約50%、大於或約60%、大於或約70%、大於或約80%、大於或約90%、大於或約100%、大於或約150%、大於或約200%、大於或約300%、或更大的漸縮百分比表徵。
漸縮部分245可過渡到通道244的第三區域,該第三區域可係擴口部分246。擴口部分246可從漸縮部分245延伸到混合歧管240在第二端242處的出口。擴口部分246可從等於漸縮部分245的第二直徑的第一直徑延伸到大於第一直徑的第二直徑。在一些實施例中,第二直徑可係大約或大於第一直徑的兩倍。在實施例中,擴口部分246可藉由大於或約10%、大於或約20%、大於或約30%、大於或約40%、大於或約50%、大於或約60%、大於或約70%、大於或約80%、大於或約90%、大於或約100%、大於或約150%、大於或約200%、大於或約300%、或更大的擴口百分比表徵。
擴口部分246可向前驅物提供經由出口247穿過混合物歧管240的遞送穿過第二端242的排出口。通道244穿過混合歧管240的部分可經設置為在將混合的前驅物提供到腔室205中之前,提供足夠或充分混合遞送到混合歧管的前驅物。不同於習知技術,藉由在遞送到腔室之前執行蝕刻劑或前驅物混合,本發明系統可提供在繞著腔室及基板分佈之前具有均勻性質的蝕刻劑。以此方式,利用本技術執行的製程可具有跨基板表面更均勻的結果。
腔室205可包括呈堆疊佈置的多個部件。腔室堆疊可包括氣盒250、阻隔板260、面板270、離子抑制元件280、及蓋間隔件290。部件可用於穿過腔室分佈前驅物或前驅物集合以提供將蝕刻劑或其他前驅物均勻遞送到基板來用於處理。在實施例中,此等部件可係堆疊板,各個板至少部分界定腔室205的外部。
氣盒250可界定腔室入口252。中心通道254可穿過氣盒250界定以將前驅物遞送到腔室205中。入口252可與混合歧管240的出口247對準。在實施例中,入口252及/或中心通道254可藉由類似直徑表徵。中心通道254可延伸穿過氣盒250並且經設置為將一或多種前驅物遞送到容積257中,該容積由氣盒250從上方界定。氣盒250可包括第一表面253(諸如頂表面)及與第一表面253相對的第二表面255,諸如氣盒250的底表面。在實施例中,頂表面253可係平坦或實質上平坦的表面。加熱器248可與頂表面253耦接。
在實施例中,加熱器248可經設置為加熱腔室205,並且可傳導地加熱每個蓋堆疊部件。加熱器248可係任何種類的加熱器,包括流體加熱器、電氣加熱器、微波加熱器、或經設置為將熱傳導地遞送到腔室205的其他元件。在一些實施例中,加熱器248可係或包括繞著氣盒250的第一表面253以環形圖案形成的電氣加熱器。加熱器可跨氣盒250並且圍繞混合歧管240界定。加熱器可係板加熱器或電阻式元件加熱器,該加熱器可經設置為提供多達、大約、或大於約2,000 W的熱,並且可經設置為提供大於或約2,500 W、大於或約3,000 W、大於或約3,500 W、大於或約4,000 W、大於或約4,500 W、大於或約5,000 W、或更大功率。
加熱器248可經設置為產生高達、大約、或大於約50℃的可變腔室部件溫度,並且在實施例中可經設置為產生大於或約75℃、大於或約100℃、大於或約150℃、大於或約200℃、大於或約250℃、大於或約300℃或更高的腔室部件溫度。加熱器248可經設置為將獨立部件(諸如離子抑制元件280)升高到任何此等溫度以促進處理操作,諸如退火。在一些處理操作中,基板可朝向離子抑制元件280升高來用於退火操作,並且加熱器248可經調節為傳導地將加熱器的溫度升高到上文提及的任何特定溫度、或在任何所提及溫度內或之間的任何溫度範圍內。
氣盒250的第二表面255可與阻隔板260耦接。阻隔板260可藉由一直徑表徵,該直徑等於或類似於氣盒250的直徑。阻隔板260可界定穿過阻隔板260的複數個孔263,僅示出該等孔的樣本,該等孔可允許分佈來自容積257的前驅物(諸如蝕刻劑),並且可開始穿過腔室205分佈前驅物用於均勻遞送到基板。儘管僅示出數個孔263,將理解阻隔板260可具有穿過該結構界定的任何數量的孔263。阻隔板260可藉由在阻隔板260的外徑處升高的環形部分265以及在阻隔板260的外徑處降低的環形部分266表徵。在實施例中,升高的環形部分265可為阻隔板260提供結構剛性,並且可界定容積257的側面或外徑。阻隔板260亦可從下方界定容積257的底部。容積257可允許在經過阻隔板260的孔263之前分佈來自氣盒250的中心通道254的前驅物。在實施例中,降低的環形部分266亦可為阻隔板260提供結構剛性,並且可界定第二容積258的側面或外徑。阻隔板260亦可從上方界定容積258的頂部,而容積258的底部可由面板270從下方界定。
面板270可包括第一表面272及與第一表面272相對的第二表面274。面板270可在第一表面272處與阻隔板260耦接,該面板可接合阻隔板260的降低的環形部分266。面板270可在第二表面274的內部處界定突出部273,從而延伸到在面板270內或由面板270至少部分界定的第三容積275。例如,面板270可界定第三容積275的側面或外徑以及從上方界定容積275的頂部,而離子抑制元件280可從下方界定第三容積275。面板270可界定穿過面板的複數個通道,儘管未在第2圖中示出。
離子抑制元件280可靠近面板270的第二表面274定位,並且可在第二表面274處與面板270耦接。離子抑制元件280可經設置為減少離子遷移到容納基板的腔室205的處理區域中。離子抑制元件280可界定穿過該結構的複數個孔,儘管未在第2圖中示出。在實施例中,氣盒250、阻隔板260、面板270、及離子抑制元件280可耦接在一起,並且在實施例中可直接耦接在一起。藉由直接耦接部件,由加熱器248產生的熱可穿過部件傳導以維持特定腔室溫度,該特定腔室溫度可維持有部件之間的較小變化。離子抑制元件280亦可接觸蓋間隔件290,其等一起可至少部分界定在處理期間維持基板的電漿處理區域。
先前論述的腔室可在執行包括蝕刻方法的示例性方法時使用。第 3 圖
圖示了根據本技術的實施例的方法300中的示例性操作。在方法300的第一操作之前,基板(可包括矽基板)可以一或多種方式處理。例如,膜或層可在基板上沉積、生長、或以其他方式形成。特徵(諸如溝槽、孔洞)、或其他特徵可在基板上的膜或層中形成。第 4A 圖
示出了此種經處理結構400的一部分。經處理結構400可包括在覆蓋基板415的堆疊層的相鄰垂直柱410之間形成的一或多個溝槽405(僅圖示一個)。堆疊層可包括介電層,該等介電層可包括氧化物及氮化物的交替層,諸如如第4A圖所示的氧化矽420及氮化矽425的層的交替層。基板415可包括矽基板。此等兩種交替材料的一種、或其至少一部分可從溝槽選擇性蝕刻以例如產生3D NAND結構或任何其他半導體結構。儘管第4A圖僅示出了氧化矽420的四層及氮化矽425的三層,但經處理結構400可包括每種材料的任何數量層,諸如多達或大於約10、大於或約15、大於或約20、大於或約25、大於或約30、大於或約35、大於或約40、大於或約45、大於或約50、大於或約55、大於或約60、大於或約65、大於或約70、大於或約80、大於或約90、大於或約100、或者每種材料的更多層。這可產生具有數十奈米或更小的寬度的溝槽405,而其高度可在數微米或更大的數量級上。所得的溝槽405的深寬比或高度與寬度比可大於20:1、大於40:1、大於75:1、大於100:1、或甚至更大。在一些實施例中,經處理結構400可在與其中可執行方法300的處理腔室相同的處理腔室中產生,或可在不同處理腔室中產生並且隨後傳遞到其中可執行方法300的處理腔室。
一旦經處理結構400可在容納經處理結構400的半導體處理腔室的處理區域內定位,方法300可開始於操作305,使含鹵素前驅物流動到半導體處理腔室的遠端電漿區域中。示例性處理腔室可係先前描述的腔室205,該腔室可包括RPS單元210或腔室內的電漿區域中的一或兩個,該電漿區域可與處理區域流體耦接,但可經實體劃分以將電漿限制於基板位準。此等區域的任一個或兩個可係在操作305中使用的遠端電漿區域。電漿可於操作310在遠端電漿區域內產生,這可產生含鹵素前驅物的電漿流出物。於操作315,電漿流出物可流動到腔室的處理區域。於操作320,可將含氫前驅物連同電漿流出物提供到處理區域。於操作325,電漿流出物及含氫前驅物可改變暴露的氮化矽425並且與其相互作用以形成揮發性物質,諸如氟矽酸銨,該等揮發性物質可隨後從腔室移除。在一些實施例中,電漿流出物及含氫前驅物可能不與暴露的氧化矽420反應或反應可受限。由此,如第4B圖所示,方法300可相對於暴露的氧化矽420選擇性移除暴露的氮化矽425,從而在氮化矽425的層中形成橫向凹陷或凹陷側壁430。
在一些實施例中,諸如方法300,含氫前驅物可繞過遠端電漿區域。具體而言,儘管含鹵素前驅物可流過遠端電漿區域以產生含鹵素前驅物的電漿流出物,但含氫前驅物可繞過遠端電漿區域。含氫前驅物可藉由腔室頂部處的旁路繞過遠端電漿區域,或可流動到與遠端電漿區域分離的腔室區域中。含氫前驅物可隨後在腔室的處理區域或一些其他區域中與電漿流出物混合。在一些實施例中,可將含鹵素前驅物及含氫前驅物的電漿流出物遞送到混合歧管(諸如上文描述的混合歧管240)中,以在提供到腔室的處理區域中之前實現足夠或充分混合。
參考第 5 圖
,圖示了根據本技術的實施例的另一方法500中的示例性操作。方法500類似於方法300,不同之處在於含氫前驅物亦可流動到處理腔室的遠端電漿區域中。具體而言,一旦經處理結構400可在處理腔室的處理區域內定位,方法500可開始於操作505,使含鹵素前驅物流動到處理腔室的遠端電漿區域中。於操作510,含氫前驅物可流動到遠端電漿區域中。於操作515,電漿可在遠端電漿區域內產生,該遠端電漿區域可產生含鹵素前驅物的電漿流出物及含氫前驅物的電漿流出物。於操作520,電漿流出物可流動到腔室的處理區域。於操作525,含鹵素前驅物的電漿流出物及含氫前驅物的電漿流出物可改變暴露的氮化矽425並且與其相互作用以形成揮發性物質,諸如氟矽酸銨,該等揮發性物質可隨後從腔室移除。類似於方法300的含鹵素前驅物及含氫前驅物的電漿流出物的組合,方法500的組合的含鹵素前驅物的電漿流出物及含氫前驅物的電漿流出物可能不與暴露的氧化矽420反應或反應可受限。由此,方法500可相對於暴露的氧化矽420選擇性移除暴露的氮化矽425,從而在氮化矽425的層中形成凹陷側壁430。
在方法300及/或方法500中使用的含鹵素前驅物可包括含氟前驅物。示例性含氟前驅物可係三氟化氮(NF3
)。氟的其他來源可與三氟化氮結合使用或作為三氟化氮的替代品。在一些實施例中,含氟前驅物可包括選自下列的群組的至少一種前驅物:原子氟、雙原子氟、三氟化氮、四氟化碳、氟化氫、二氟化氙、及在半導體處理時使用或可用的各種其他含氟前驅物。前驅物亦可包括任何數量的載氣,該等載氣可包括氮、氦、氬、或其他稀有、惰性、或可用氣體。
在方法300及/或方法500中使用的含氫前驅物可包括雙原子氫(H2
)或氟化氫(HF)。氫的其他來源可與氫及/或氟化氫結合使用或作為氫及/或氟化氫的替代品。在一些實施例中,含氫前驅物可包括選自下列的群組的至少一種前驅物:雙原子氫、氟化氫、烴、醇、過氧化氫、及在半導體處理時使用或可用的各種其他含氫前驅物。在一些實施例中,含氫前驅物可能不包括氧或可係無氧的。當含氫前驅物可係無氧時,使含氫前驅物流動到處理腔室中可能不將氧來源引入處理腔室中。藉由消除氧,一些實施例可實現顯著較高的選擇性,該選擇性可能不藉由含氧前驅物實現。如下文將論述,本技術可實現大於或約100:1、大於或約200:1、大於或約300:1、大於或約400:1、大於或約500:1、大於或約600:1、大於或約700:1、大於或約800:1、或更大的氮化矽對氧化矽的選擇性。前驅物亦可包括任何數量的載氣,該等載氣可包括氮、氦、氬、或其他稀有、惰性、或可用氣體。
含鹵素前驅物及含氫前驅物可以類似速率流動或可以不同速率流動。含鹵素前驅物及/或含氫前驅物可以至少10 sccm的速率流動,並且在一些實施例中可以大於或約20 sccm、大於或約40 sccm、大於或約60 sccm、大於或約80 sccm、大於或約100 sccm、大於或約120 sccm、大於或約140 sccm、大於或約160 sccm、大於或約180 sccm、大於或約200 sccm、大於或約220 sccm、大於或約240 sccm、大於或約260 sccm、大於或約280 sccm、大於或約300 sccm、大於或約350 sccm、大於或約400 sccm、大於或約500 sccm、大於或約600 sccm、大於或約700 sccm、大於或約800 sccm、大於或約900 sccm、大於或約1000 sccm、大於或約1200 sccm、大於或約1400 sccm、大於或約1600 sccm、大於或約1800 sccm、大於或約2000 sccm的速率流動。含鹵素前驅物的流動速率與含氫前驅物的流動速率的比率可至少約1:10,並且在各個實施例中可大於或約1:9、大於或約1:8、大於或約1:7、大於或約1:6、大於或約1:5、大於或約1:4、大於或約1:3、大於或約1:2、大於或約1:1、大於或約2:1、或更大。
藉由調節含鹵素前驅物的流動速率及/或含氫前驅物的流動速率,及/或藉由調節含鹵素前驅物的流動速率與含氫前驅物的流動速率的比率,可實現氮化矽相對於氧化矽的高選擇性。第 6A 圖
示出了在前驅物的蝕刻量與流動速率之間的關係以及在前驅物的選擇性與流動速率之間的關係。因為使前驅物流動達針對收集的每個資料點的類似時間段,第6A圖亦可反映了在前驅物的蝕刻速率與流動速率之間的關係。在第6A圖所示的實施例中,儘管當可使用其他含鹵素前驅物或其他含氫前驅物(諸如氟化氫)時可觀察到類似趨勢或關係,含鹵素前驅物包括三氟化氮,並且含氫前驅物包括雙原子氫。在一些實施例中,暴露的氮化矽可包括電漿增強氮化矽,諸如使用電漿增強化學氣相沉積、電漿增強原子層沉積、或其他電漿增強沉積技術沉積的氮化矽。電漿增強氮化矽可通常用於產生3D NAND結構。在一些實施例中,暴露的氮化矽可包括低壓氮化矽,諸如使用低壓化學氣相沉積來沉積的氮化矽。與電漿增強氮化矽相比,低壓氮化矽可包括較大密度及/或強度,及/或在所沉積膜中的較少雜質量。在一些實施例中,暴露的氮化矽可包括在各個溫度下使用原子層沉積(atomic layer deposition; ALD)沉積的氮化矽。暴露的氧化矽可包括熱氧化物。儘管在本文中將電漿增強氮化矽、低壓氮化矽、使用ALD沉積的氮化矽、及熱氧化物描述為實例,本技術可相對於熱氧化物或其他類型的氧化矽選擇性地蝕刻其他類型的氮化矽。
含鹵素前驅物及/或含氫前驅物的流動速率可維持在約10 sccm與約2000 sccm之間。含鹵素前驅物的流動速率與含氫前驅物的流動速率的比率可在約1:5與約1:1之間變化或可大於1:1。在一些實施例中,當可增加含鹵素前驅物的流動速率時,或當含鹵素前驅物的流動速率與含氫前驅物的流動速率的比率可從約1:5增加至約1:2時,可增加流動到處理區域(其中可容納基板)中的含鹵素前驅物的電漿流出物的量。由於可增加電漿流出物的量,可用蝕刻劑亦可增加,並且可增加針對氮化矽及氧化矽二者的蝕刻量及/或蝕刻速率。
當含鹵素前驅物可以增加的流動速率流動時,或當含鹵素前驅物的流動速率與含氫前驅物的流動速率的比率可係約1:2或更大時,針對氮化矽及氧化矽二者的蝕刻量及/或蝕刻速率可增加。不意欲受限於任何特定理論,針對氧化矽及氧化矽的蝕刻量及/或蝕刻速率的減小可歸因於含鹵素前驅物與含氫前驅物的流動速率比。具體而言,儘管可增加含鹵素前驅物的電漿流出物的量,當流動速率比可增加為大於或約1:2時,可減少蝕刻劑(包括可由電漿流出物及含氫前驅物形成的氟化銨)的總量。然而,與氮化矽的蝕刻量及/或蝕刻速率減小相比,氧化矽的蝕刻量及/或蝕刻速率減小可係更顯著的。如第6A圖所示,當流動速率比可進一步增加到約1:1時,可實質上抑制氧化矽的蝕刻,而仍可維持氮化矽的蝕刻。
因為與氮化矽的蝕刻相比,氧化矽的蝕刻可更顯著地減小,或當含鹵素前驅物與含氫前驅物的流動速率比可從約2:1增加至約1:1或更大時,可實質上抑制氧化矽的蝕刻,可實現氮化矽相對於氧化矽的非常高選擇性。在一些實施例中,本技術可實現大於或約100:1、大於或約200:1、大於或約300:1、大於或約400:1、大於或約500:1、大於或約600:1、大於或約700:1、大於或約800:1、或更大的氮化矽相對於氧化矽的選擇性。甚至當可將含鹵素前驅物與含氫前驅物的流動速率比維持於約1:2或更小時,本技術仍可相對於氧化矽選擇性蝕刻氮化矽,從而實現大於1:1、大於或約1.2:1、大於或約1.4:1、大於或約1.6:1、大於或約1.8:1、大於或約2:1、大於或約3:1、大於或約4:1、大於或約5:1、大於或約6:1、大於或約7:1、大於或約8:1、大於或約9:1、大於或約10:1或更大的選擇性。換言之,本文描述的方法可相對於氧化矽選擇性蝕刻氮化矽,不論含鹵素前驅物的流動速率可小於、類似還是實質上與含氫前驅物的流動速率相同、或大於含氫前驅物的流動速率。由此,取決於特定應用,可調整含鹵素前驅物及/或含氫前驅物的流動速率及/或流動速率比以實現高選擇性、高蝕刻量或蝕刻速率、對前驅物的節省等等、或其平衡或組合。
除了實現高選擇性的能力之外,本文描述的方法亦可隨時間維持氮化矽的蝕刻速率。如第 6B 圖
所示,氮化矽的蝕刻量可隨時間增加,並且在一些實施例中,氮化矽的蝕刻量可實質上線性地取決於蝕刻時間。換言之,氮化矽的蝕刻速率可隨時間維持,並且隨著蝕刻操作可繼續,氮化矽的蝕刻速率可能不減小。此外,不同於一些習知蝕刻方法,其中無論如何氧化矽或待保護的其他材料的蝕刻可發生並且甚至可隨時間增加,隨著氮化矽的蝕刻可繼續,本文描述的方法可實質上抑制氧化矽的蝕刻。因此,彼等習知蝕刻方法的選擇性可能不維持並且可隨時間減小。相比之下,本文描述的方法可隨時間維持氮化矽相對於氧化矽及待保護的其他材料的選擇性,並且氮化矽的選擇性可能不隨時間減小,亦如第6B圖所示。
製程條件亦可影響在方法300或500中執行的操作、以及根據本發明技術的其他移除方法。在實施例中,在處理腔室內或在基板位準處的溫度可維持在約-10℃或更低與約200℃或更高之間。例如,在一些實施例中,處理溫度可維持在約0℃與約150℃之間、在約10℃與約125℃之間、在約20℃與約100℃之間、在約30℃與約85℃之間、在約40℃與約80℃之間、在約50℃與約75℃之間、或在約60℃與約70℃之間。
第 6C 圖
示出了在蝕刻量與溫度之間的關係以及在選擇性與溫度之間的關係。因為使前驅物流動達針對收集的每個資料點的類似時間段,第6C圖亦可反映在前驅物的蝕刻速率與流動速率之間的關係。如第6C圖所示,由於處理腔室內的溫度可從0℃或更低逐漸增加至在約30℃與約85℃之間的溫度,氮化矽的蝕刻量及/或蝕刻速率可逐漸增加。然而,隨著溫度可繼續增加,氮化矽的蝕刻量及/或蝕刻速率可能不增加、或可減少。亦如第6C圖所示,儘管選擇性可在不同溫度下變化,方法可在溫度的整個操作範圍內相對於氧化矽選擇性蝕刻氮化矽,類似於氮化矽的蝕刻量及/或蝕刻速率可如何在不同溫度下變化。
不意欲受限於任何特定理論,當溫度可從0℃或更低逐漸增加至在約30℃與約85℃之間的溫度時,蝕刻劑可獲得更多能量以到達待吸附在基板表面上的基板,並且與待蝕刻的結構反應。由於更多蝕刻劑可吸附在基板表面上,蝕刻量、蝕刻速率、及/或選擇性可逐漸增加。當溫度可繼續增加時,蝕刻劑可從基板表面解吸附並且可能不簡單地吸附到表面,這繼而可導致減小的蝕刻量、蝕刻速率、及/或選擇性。取決於應用,在處理腔室內的溫度可維持在約30℃與約85℃之間、在約40℃與約80℃之間、在約50℃與約75℃之間、或在約60℃與約70℃之間以獲得高蝕刻速率及/或選擇性。
除了實現期望的蝕刻速率及/或選擇性之外,可維持或選擇處理腔室的溫度以實現均勻蝕刻。如上文論述,在第4A圖及第4B圖所示的經處理結構400中的溝槽405可具有非常高的深寬比。為了實現從溝槽405的頂部到底部的均勻蝕刻,亦稱為頂部到底部裝載的1:1比率,可維持相對低的在處理腔室內的溫度。在一些實施例中,可維持低於約125℃、低於約100℃、低於約95℃、低於約90℃、低於約85℃、或更低的溫度。在一些實施例中,藉由維持在約30℃與約85℃之間的溫度,可實現頂部到底部裝載的1:1比率。
另外,藉由調節處理腔室的溫度,可調諧所蝕刻的氮化矽的每個層的凹陷輪廓。在一些實施例中,當處理腔室的溫度可維持在約30℃與約85℃之間時,可獲得如第4B圖所示的凹陷側壁430的相對筆直並且在一些實施例中實質上筆直的蝕刻輪廓或凹陷輪廓。在一些實施例中,當處理腔室可維持在相對較低的溫度(諸如低於或約30℃)下時,可獲得如第 7A 圖
所示的凹陷側壁430的凸起輪廓。可維持的溫度越低,可導致的凸起輪廓越多。不意欲受限於任何特定理論,可形成凸起輪廓,因為由凹陷側壁430及氧化矽420的相鄰層界定的拐角可大體為蝕刻劑提供低能吸附位點,並且當溫度可維持相對低時,吸附的蝕刻劑可較不易於移動或變得解吸附,從而導致拐角處蝕刻更多的氮化矽。
其他處理條件(諸如處理腔室內的壓力)亦可影響氮化矽層的凹陷側壁的蝕刻輪廓。在一些實施例中,當處理腔室的壓力可維持相對低(諸如低於或約1 Torr)時,可獲得如第7A圖所示的凹陷側壁430的凸起輪廓。當處理腔室的壓力可維持高於約1 Torr(諸如高於或約5 Torr)時,可實現如第 7B 圖
所示的凹陷側壁430的凹入輪廓。當處理腔室的壓力可維持在約1 Torr與約5 Torr之間或在約2 Torr與約4 Torr之間時,可實現凹陷側壁430的相對筆直蝕刻輪廓。在一些實施例中,當處理腔室的壓力可維持在約3 Torr時,如第4B圖所示,凹陷側壁430的蝕刻輪廓可實質上筆直。由此,取決於應用及期望的凹陷輪廓,在處理腔室內的壓力可維持在約0.5 Torr與約50 Torr之間的任何適宜水平。例如,在處理腔室內的壓力可維持在約0.5 Torr與約1 Torr之間以實現氮化矽的凸起凹陷輪廓,在處理腔室內的壓力可維持在約1 Torr與約5 Torr之間以實現相對筆直的凹陷輪廓,並且在腔室內的壓力可維持在約5 Torr與約50 Torr之間以實現凹入的凹陷輪廓。壓力亦可維持在此等範圍內、由此等範圍涵蓋的較小範圍內、或任何此等範圍之間的任何壓力下。
第 8A 圖
及第 8B 圖
示出了氮化矽相對於氧化矽的選擇性的可調諧性。在第8A圖及第8B圖所示的實施例中,儘管當可使用其他含鹵素前驅物或其他含氫前驅物(諸如氟化氫)時可觀察到類似趨勢或關係,含鹵素前驅物包括三氟化氮,並且含氫前驅物包括雙原子氫。暴露的氮化矽可包括電漿增強氮化矽、低壓氮化矽、使用ALD沉積的氮化矽等等,並且暴露的氧化矽可包括熱氧化物。因為低壓氮化矽可包括較大密度及/或強度、及/或在所沉積膜中的較少雜質量,可能難以實現使用習知蝕刻方法相對於氧化矽選擇性蝕刻低壓氮化矽。本文描述的方法可相對於氧化矽選擇性蝕刻各種類型的氮化矽,包括相對於氧化矽選擇性蝕刻低壓氮化矽,並且可實現大於1:1、大於或約1.1:1、大於或約1.2:1、大於或約1.3:1、大於或約1.4:1、大於或約1.5:1、大於或約1.6:1、大於或約1.7:1、大於或約1.8:1、大於或約1.9:1、大於或約2:1、或更大的低壓氮化矽相對於氧化矽的選擇性。
含鹵素前驅物的流動速率可維持在約10 sccm與約2000 sccm之間,並且含氫前驅物的流動速率可維持在約10 sccm與約2000 sccm之間。此外,藉由調節含鹵素前驅物的流動速率與含氫前驅物的流動速率的比率,可實現不同選擇性。由此,本文描述的方法可允許氮化矽相對於氧化矽的選擇性的可調諧性。在一些實施例中,藉由在約1:1與約1:3之間調節含鹵素前驅物與含氫前驅物的流動速率比,氮化矽與氧化矽的選擇性可從大於1:1至約2:1或更大(諸如從約1:1至約1.8:1)調諧。此外,本文描述的方法可允許在不同溫度下的氮化矽相對於氧化矽的選擇性的可調諧性。在第8A圖所示的實施例中,處理腔室的溫度可維持在約30℃下。當處理腔室的溫度可增加(諸如在第8B圖所示的實施例中增加到約60℃)時,選擇性亦可調諧。藉由在約1:1與約1:9之間調節含鹵素前驅物與含氫前驅物的流動速率比,氮化矽與氧化矽的選擇性可從大於1:1調諧至約2:1或更大(諸如從約1.2:1至約1.5:1)。儘管將30℃及60℃描述為示例性操作溫度,選擇性的可調諧性可在其他溫度下實現,諸如低於約30℃、在約30℃與約60℃之間、高於約60℃、或者其他溫度或溫度範圍。類似於使用低壓沉積技術沉積的氮化矽,藉由調節前驅物在各個溫度(諸如低於約30℃、在約30℃與約60℃之間、高於約60℃、或者其他溫度或溫度範圍)下的流動速率比,本文描述的方法亦可允許將使用原子層沉積來沉積的氮化矽的選擇性從1:1調諧至2:1或更大。
第 9 圖
示出了在各種材料的蝕刻量與含氫前驅物的流動速率之間的關係。在第9圖所示的實施例中,儘管當可使用其他含鹵素前驅物或其他含氫前驅物(諸如氟化氫)時可觀察到類似趨勢或關係,含鹵素前驅物包括三氟化氮,並且含氫前驅物包括雙原子氫。如第9圖所示,本文描述的方法可能不僅相對於氧化矽選擇性蝕刻氮化矽,而亦可相對於矽(包括多晶矽)選擇性蝕刻氮化矽。具體而言,當含鹵素前驅物與含氫前驅物的流動速率比可從約1:1調節至小於約1:3或更大以獲得氮化矽的各種蝕刻量時,實質上可不發生多晶矽的蝕刻。另外,當含鹵素前驅物與含氫前驅物的流動速率比可維持接近約1:1(諸如在約1:1與約1:1.3之間)時,可抑制氧化矽及多晶矽的蝕刻二者,並且方法可相對氧化矽及多晶矽選擇性蝕刻各種氮化矽,包括使用電漿增強沉積、低壓沉積、原子層沉積、或其他可用沉積技術沉積的氮化矽。
第 10 圖
圖示了根據本技術的一些實施例用於相對於氮化矽選擇性蝕刻氧化矽的方法1000中的示例性操作。方法1000可開始於操作1005,將含鹵素前驅物提供到處理腔室的處理區域,該處理腔室中可容納基板或經處理結構。基板可包括暴露的氮化物(諸如氮化矽)、及暴露的氧化物(諸如氧化矽)。於操作1010,可將含氫前驅物提供到處理區域。於操作1015,含鹵素前驅物及含氫前驅物可改變暴露的氧化矽並且與其相互作用以形成揮發性物質,諸如氟矽酸銨,該等揮發性物質可隨後從腔室移除。含鹵素前驅物及含氫前驅物可能不與暴露的氮化矽反應或反應可受限。由此,方法1000可相對於暴露的氮化矽選擇性移除暴露的氧化矽。
在方法1000中使用的含鹵素前驅物可包括含氟前驅物。示例性含氟前驅物可包括三氟化氮(NF3
)及/或氟化氫(HF)。氟的其他來源可與三氟化氮及/或氟化氫結合使用或作為三氟化氮及/或氟化氫的替代品。在一些實施例中,含氟前驅物可包括選自下列的群組的至少一種前驅物:原子氟、雙原子氟、三氟化氮、四氟化碳、氟化氫、二氟化氙、及在半導體處理時使用或可用的各種其他含氟前驅物。前驅物亦可包括任何數量的載氣,該等載氣可包括氮、氦、氬、或其他稀有、惰性、或可用氣體。
在方法1000中使用的含氫前驅物可包括銨(NH3
)。氫的其他來源可與銨結合使用或作為銨的替代品。在一些實施例中,含氫前驅物可包括選自下列的群組的至少一種前驅物:銨、烴、醇、過氧化氫、及在半導體處理時使用或可用的各種其他含氫前驅物。前驅物亦可包括任何數量的載氣,該等載氣可包括氮、氦、氬、或其他稀有、惰性、或可用氣體。
在一些實施例中,含鹵素前驅物及含氫前驅物二者可流動到處理腔室的遠端電漿區域中以形成含鹵素前驅物及含氫前驅物的電漿流出物。在一些實施例中,含鹵素前驅物及含氫前驅物的僅一者可提供到遠端電漿區域以形成電漿流出物,並且含鹵素前驅物及含氫前驅物的另一者可繞過遠端電漿區域並且可提供到處理區域中而不形成其電漿。在一些實施例中,含鹵素前驅物及含氫前驅物二者可繞過遠端電漿區域,並且前驅物可提供到處理腔室而不形成任一前驅物的電漿流出物。因此,取決於實施方式,在方法1000中提供到處理腔室的處理區域的前驅物可包括含鹵素前驅物及含氫前驅物二者的電漿流出物、含鹵素前驅物及含氫前驅物的僅一者的電漿流出物、或無電漿流出物。不論電漿是否可由含鹵素前驅物及/或含氫前驅物形成,方法1000可相對於氮化矽選擇性蝕刻氧化矽。
此外,氧化矽相對於氮化矽的選擇性可藉由調節流動速率比、溫度、壓力、及其他操作條件中的一或多個來調諧。在一些實施例中,當含鹵素前驅物的流動速率與含氫前驅物的流動速率的比率可維持在約1:2與約1:3(諸如約1:2.5)之間時,可實質上抑制氮化矽的蝕刻。方法1000可具有大於或約20:1、大於或約30:1、大於或約40:1、大於或約50:1、大於或約60:1、大於或約70:1、大於或約80:1、大於或約90:1、大於或約100:1、大於或約110:1、大於或約120:1、大於或約130:1、大於或約140:1、大於或約150:1、或更大的氧化矽相對於氮化矽的選擇性。
處理腔室的溫度可維持在約0℃與約150℃之間以實現氧化矽相對於氮化矽的高選擇性。在一些實施例中,處理腔室或在基板位準處的溫度可維持低於或約150℃、低於或約100℃、低於或約60℃、低於或約50℃、低於或約40℃、低於或約35℃、低於或約30℃、低於或約25℃、低於或約20℃、低於或約15℃、低於或約10℃、低於或約5℃、低於或約0℃或更低,同時將氧化矽相對於氮化矽的選擇性維持在大於或約30:1、大於或約50:1、大於或約70:1、大於或約80:1、大於或約90:1、大於或約100:1或更大。另外,選擇性可維持或可能不隨時間減小。甚至當操作可在相對低的溫度(諸如約10℃或更低)下執行時,方法1000可實現及/或維持氧化矽相對於氮化矽的高選擇性。方法1000亦可維持氮化矽隨時間的蝕刻速率。如第 11 圖
所示,在一些實施例中,氧化矽的蝕刻量可隨時間增加並且可實質上線性地取決於蝕刻時間。相比之下,隨著氧化矽的蝕刻可繼續,可實質上抑制或可能實質上不增加氮化矽的蝕刻。因此,隨著氧化矽的蝕刻可繼續,氧化矽相對於氮化矽的蝕刻選擇性可維持並且可能不減小。
在處理腔室內的壓力可維持在約0.5 Torr與約50 Torr之間。在一些實施例中,在處理腔室內的壓力可維持低於或約40 Torr、低於或約30 Torr、低於或約20 Torr、低於或約10 Torr、低於或約5 Torr、低於或約4 Torr、低於或約3 Torr、低於或約2 Torr、低於或約1 Torr、低於或約0.5 Torr、或更低。壓力亦可維持在此等範圍內、由此等範圍涵蓋的較小範圍內、或任何此等範圍之間的任何壓力下。
本文描述的各種蝕刻方法提供眾多優點。本文描述的方法可使用氣體蝕刻劑來到達可具有高深寬比的3D NAND結構或其他特徵中的溝槽底部,由此與習知濕式蝕刻製程相比,改進蝕刻均勻性或頂部到底部裝載。由本文描述的方法形成的副產物可係揮發性的,並且因此可藉由將處理腔室及/或基板的溫度增加或維持於或高於約125℃來簡單地移除,從而如與習知濕式製程相比,實質上不餘留殘留副產物或餘留較少殘留副產物。另外,本文描述的方法可提供調諧蝕刻的凹陷輪廓(諸如蝕刻的氮化矽的凹陷輪廓)以實現凸起、筆直、及/或凹入的凹陷輪廓的能力。本文描述的方法亦可提供調諧氮化矽及/或氧化矽的選擇性的能力。藉由選擇前驅物,及/或調節前驅物的流動速率比、處理器腔室的溫度、及/或處理腔室內的壓力,方法在一些實施例中可相對於氧化物選擇性蝕刻氮化物,或在其他實施例中可相對於氮化物選擇性蝕刻氧化物。取決於前驅物及/或操作條件,方法在一些實施例中可實現從約1:1至約500:1或更大的氮化物相對於氧化物的選擇性,並且在其他實施例中可實現從約1:1至約100:1或更大的氧化物相對於氮化物的選擇性。藉由使用含鹵素前驅物及含氫前驅物,與其中可使用含氧前驅物的蝕刻方法相比,本文描述的方法可大體實現較高選擇性。
在前述描述中,出於解釋的目的,已經闡述數個細節以便提供對本技術的各個實施例的理解。然而,熟習此項技術者將顯而易見,可在沒有此等細節中的一些細節的情況下或具有額外細節的情況下實踐某些實施例。
在已揭示若干實施例的情況下,熟習此項技術者將認識到可使用各種修改、替代構造、及等效者而不脫離實施例的精神。此外,尚未描述數種熟知製程及元素,以便避免不必要地混淆本技術。由此,以上描述不應當被認為限制技術的範疇。此外,方法或製程可按順序或步驟描述,但將理解,操作可同時執行或以與所列出者不同的次序執行。
在提供值範圍的情況下,將理解除非上下文另外明確指出,亦具體地揭示每個中間值到在彼範圍的上限與下限之間的下限單位的最小分數。涵蓋在任何提及值或在所提及範圍中未提及的中間值與在所提及範圍中的任何其他提及值或中間值之間的任何較窄範圍。彼等較小範圍的上限及下限可獨立地包括或排除在範圍中,並且每個範圍(其中任一限值、無任一限值、或兩個限值包括在較小範圍中)亦在技術內涵蓋,具有在所提及範圍中任何具體排除的限值。在所提及範圍包括一或兩個限值的情況下,亦包括排除彼等包括的限值的任一個或兩個的範圍。
如在本文及隨附申請專利範圍中使用,除非上下文另外明確指出,否則單數形式「一(a)」、「一(an)」、及「該(the)」包括複數引用。因此,例如,提及「一前驅物」包括複數個此種前驅物,並且提及「層」包括提及一或多層及熟習此項技術者已知的其等效物等等。
此外,當在此說明書及以下申請專利範圍中使用時,詞語「包含(comprise(s)、 comprising)」、「含有(contain(s)、containing)」、及「包括(include(s)、including)」意欲規定存在所提及的特徵、整數、部件、或操作,但該等詞語不排除存在或添加一或多個其他特徵、整數、部件、操作、動作或群組。
100:處理系統
102:前開式晶圓盒(FOUP)
104:機器人臂
106:固持區域
108a:基板處理腔室
108b:基板處理腔室
108c:基板處理腔室
108d:基板處理腔室
108e:基板處理腔室
108f:基板處理腔室
109a:串列部分
109b:串列部分
109c:串列部分
200:處理系統
205:處理腔室
210:遠端電漿單元
211:第一端
212:第二端
213:通道
214:溝槽
220:隔離器
221:隔離器通道
223:中心孔
224:溝槽
225:壓板
226:第一端
227:第二端
228:中心通道
229a:第一部分
229b:第二部分
230:入口配接器
231:第二通道
232:第一通口
233:第三通道
234:第二通口
235:擴散器
236:第一通道
237:第二通道
238:第三通道
239a,b,c:溝槽
240:混合歧管
241:第一端
242:第二端
243:入口
244:通道
245:漸縮部分
246:擴口部分
247:出口
248:加熱器
250:氣盒
252:入口
253:頂表面
254:中心通道
255:第二表面
257:容積
258:第二容積
260:阻隔板
263:孔
265:升高的環形部分
266:降低的環形部分
270:面板
272:第一表面
273:突出部
274:第二表面
275:第三容積
280:離子抑制元件
290:蓋間隔件
300:方法
305:操作
310:操作
315:操作
320:操作
325:操作
400:經處理結構
405:溝槽
410:垂直柱
415:基板
420:氧化矽
425:氮化矽
430:凹陷側壁
500:方法
505:操作
510:操作
515:操作
520:操作
525:操作
1000:方法
1005:操作
1010:操作
1015:操作
可藉由參考說明書的剩餘部分及圖式來實現對所揭示技術的性質及優點的進一步理解。
第1圖圖示了根據本技術的實施例的示例性處理系統的一個實施例的俯視平面圖。
第2圖圖示了示例性處理系統的橫截面圖。
第3圖圖示了根據本技術的一些實施例的方法中的示例性操作。
第4A圖及第4B圖圖示了根據本技術的一些實施例的所處理基板的橫截面圖。
第5圖圖示了根據本技術的一些實施例的方法中的示例性操作。
第6A圖圖示了根據本技術的一些實施例的在前驅物的蝕刻量與流動速率之間的關係以及在前驅物的選擇性與流動速率之間的關係。
第6B圖圖示了根據本技術的一些實施例的在蝕刻量與蝕刻時間之間的關係以及在選擇性與蝕刻時間之間的關係。
第6C圖圖示了根據本技術的一些實施例的在蝕刻量與溫度之間的關係以及在選擇性與溫度之間的關係。
第7A圖及第7B圖圖示了根據本技術的一些實施例的正在處理中基板的橫截面圖。
第8A圖及第8B圖圖示了根據本技術的一些實施例的在不同溫度下在前驅物的蝕刻量與流動速率之間的關係以及在前驅物的選擇性與流動速率之間的關係。
第9圖圖示了根據本技術的一些實施例的在針對各種材料的前驅物的蝕刻量與流動速率之間的關係。
第10圖圖示了根據本技術的一些實施例的方法中的示例性操作。
第11圖圖示了根據本技術的一些實施例的在蝕刻量與蝕刻時間之間的關係。
若干圖式作為示意圖包括在內。將理解圖式係出於說明目的,並且除非特別聲明為按比例,否則不認為該等圖式係按比例的。此外,作為示意圖,提供圖式以輔助理解,並且與現實表示相比可能不包括所有態樣或資訊,並且出於說明目的可包括誇示的材料。
在附圖中,類似部件及/或特徵可具有相同的元件符號。另外,相同類型的各個部件可藉由元件符號之後跟有在類似部件之間進行區分的字母來進行區分。若在本說明書中僅使用第一元件符號,則本說明適用於具有相同第一元件符號的類似部件的任一個,而與字母無關。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記)
無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記)
無
400:經處理結構
420:氧化矽
425:氮化矽
430:凹陷側壁
Claims (15)
- 一種蝕刻方法,包含:使一含氟前驅物流動到一半導體處理腔室的一遠端電漿區域中;在該遠端電漿區域內形成一電漿以產生該含氟前驅物的電漿流出物;使該等電漿流出物流動到該半導體處理腔室的一處理區域中,其中該處理區域容納一基板,並且其中該基板包含暴露的氮化矽的一區域及暴露的氧化物的一區域;將一含氫前驅物提供到該半導體處理腔室的該處理區域中,其中該含氫前驅物包含雙原子氫或氟化氫的一種,其中當提供到該處理區域時該含氫前驅物繞過該遠端電漿區域,及其中該含氟前驅物的一流動速率與該含氫前驅物的一流動速率的一比率在約1:10與約2:1之間變化;以及相對於該暴露的氧化物選擇性移除該暴露的氮化矽的至少一部分,其中在該蝕刻方法期間不遞送一含氧前驅物進入該半導體處理腔室。
- 如請求項1所述之蝕刻方法,其中該含氟前驅物包含三氟化氮。
- 如請求項1所述之蝕刻方法,其中在該蝕刻 方法期間將該基板的一溫度維持在約0℃與約150℃之間。
- 如請求項1所述之蝕刻方法,其中在該半導體處理腔室內的一壓力維持在約0.5Torr與約50Torr之間。
- 如請求項1所述之蝕刻方法,其中該蝕刻方法具有大於或約500:1的氮化矽相對於氧化物的一選擇性。
- 如請求項1所述之蝕刻方法,其中該蝕刻方法產生該暴露的氮化矽的一凹陷側壁,並且其中該凹陷側壁具有一實質上筆直的凹陷輪廓。
- 如請求項1所述之蝕刻方法,其中該暴露的氧化物包含氧化矽。
- 如請求項1所述之蝕刻方法,其中該基板進一步包含暴露矽的一區域,並且其中相對於該暴露矽進一步選擇性移除該暴露的氮化矽的該部分。
- 一種蝕刻方法,包含:使一含氟前驅物流動到一半導體處理腔室的一遠端電漿區域中;在該遠端電漿區域內形成一電漿以產生該含氟前驅物的電漿流出物;使該等電漿流出物流動到該半導體處理腔室的一處 理區域中,其中該處理區域容納一基板,其中該基板包含在兩個垂直柱之間形成的一溝槽,其中該等兩個垂直柱的每一個包含氮化矽及一氧化物材料的交替層;當使該含氟前驅物流動到該處理區域中時,將一含氫前驅物提供到該處理區域以產生一蝕刻劑,其中該含氫前驅物繞過該遠端電漿區域,其中該含氫前驅物包含雙原子氫或氟化氫的一種,及其中該含氟前驅物的一流動速率與該含氫前驅物的一流動速率的一比率在約1:10與約2:1之間變化;以及用該蝕刻劑從氮化矽的每層選擇性移除氮化矽的至少一部分,其中在該蝕刻方法期間不遞送一含氧前驅物進入該半導體處理腔室。
- 如請求項9所述之蝕刻方法,其中在該蝕刻方法期間將該基板的一溫度維持在約30℃與約85℃之間。
- 如請求項9所述之蝕刻方法,其中在該半導體處理腔室內的一壓力維持在約1Torr與約5Torr之間。
- 如請求項9所述之蝕刻方法,其中該基板包含暴露矽的一區域,並且其中相對於該暴露矽從氮化矽的每層選擇性移除氮化矽的該部分。
- 如請求項9所述之蝕刻方法,其中該氧化物材料包含氧化矽。
- 一種移除方法,包含:使一含氟前驅物流動到一半導體處理腔室的一遠端電漿區域中;在該遠端電漿區域內形成一電漿以產生該含氟前驅物的電漿流出物;使一含氫前驅物流動到該半導體處理腔室的該遠端電漿區域中,其中該含氫前驅物包含雙原子氫或氟化氫的一種,其中該含氫前驅物繞過該遠端電漿區域,及其中該含氟前驅物的一流動速率與該含氫前驅物的一流動速率的一比率在約1:10與約2:1之間變化;在該遠端電漿區域內形成一電漿以產生該含氫前驅物的電漿流出物;使該含氟前驅物的該等電漿流出物及該含氫前驅物的該等電漿流出物流動到該半導體處理腔室的一處理區域中,其中該處理區域容納一基板,該基板包含暴露的氮化矽的一區域及暴露的氧化矽的一區域;以及相對於該暴露的氧化矽選擇性移除該暴露的氮化矽的至少一部分,其中在該蝕刻方法期間不遞送一含氧前驅物進入該半導體處理腔室。
- 如請求項14所述之移除方法,其中該基板 進一步包含暴露矽的一區域,並且其中相對於該暴露矽移除該暴露的氮化矽的該部分。
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