FR3091410B1 - Procédé de gravure - Google Patents
Procédé de gravure Download PDFInfo
- Publication number
- FR3091410B1 FR3091410B1 FR1874151A FR1874151A FR3091410B1 FR 3091410 B1 FR3091410 B1 FR 3091410B1 FR 1874151 A FR1874151 A FR 1874151A FR 1874151 A FR1874151 A FR 1874151A FR 3091410 B1 FR3091410 B1 FR 3091410B1
- Authority
- FR
- France
- Prior art keywords
- engraving process
- selective etching
- etching
- abstract
- locally
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title abstract 4
- 238000005530 etching Methods 0.000 abstract 3
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/36—Mechanical coupling means
- G02B6/3628—Mechanical coupling means for mounting fibres to supporting carriers
- G02B6/3684—Mechanical coupling means for mounting fibres to supporting carriers characterised by the manufacturing process of surface profiling of the supporting carrier
- G02B6/3692—Mechanical coupling means for mounting fibres to supporting carriers characterised by the manufacturing process of surface profiling of the supporting carrier with surface micromachining involving etching, e.g. wet or dry etching steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/30—Optical coupling means for use between fibre and thin-film device
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/36—Mechanical coupling means
- G02B6/3628—Mechanical coupling means for mounting fibres to supporting carriers
- G02B6/3632—Mechanical coupling means for mounting fibres to supporting carriers characterised by the cross-sectional shape of the mechanical coupling means
- G02B6/3644—Mechanical coupling means for mounting fibres to supporting carriers characterised by the cross-sectional shape of the mechanical coupling means the coupling means being through-holes or wall apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Abstract
Procédé de gravure La présente description concerne un procédé de formation d'une cavité (30) traversant un empilement (10) de couches (6, 8) incluant une couche inférieure (61) dont une première portion (24) présente localement une surépaisseur, le procédé comprenant une première étape de gravure non sélective et une deuxième étape de gravure sélective à l'aplomb de la première portion (24). Figure pour l'abrégé : Fig. 6
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1874151A FR3091410B1 (fr) | 2018-12-26 | 2018-12-26 | Procédé de gravure |
US16/709,251 US11469095B2 (en) | 2018-12-26 | 2019-12-10 | Etching method |
US17/940,758 US20230005735A1 (en) | 2018-12-26 | 2022-09-08 | Etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1874151A FR3091410B1 (fr) | 2018-12-26 | 2018-12-26 | Procédé de gravure |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3091410A1 FR3091410A1 (fr) | 2020-07-03 |
FR3091410B1 true FR3091410B1 (fr) | 2021-01-15 |
Family
ID=66867317
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1874151A Active FR3091410B1 (fr) | 2018-12-26 | 2018-12-26 | Procédé de gravure |
Country Status (2)
Country | Link |
---|---|
US (2) | US11469095B2 (fr) |
FR (1) | FR3091410B1 (fr) |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63258021A (ja) * | 1987-04-16 | 1988-10-25 | Toshiba Corp | 接続孔の形成方法 |
GB2230135A (en) * | 1989-04-05 | 1990-10-10 | Koninkl Philips Electronics Nv | Dopant diffusion in semiconductor devices |
US5229785A (en) * | 1990-11-08 | 1993-07-20 | Hewlett-Packard Company | Method of manufacture of a thermal inkjet thin film printhead having a plastic orifice plate |
US6211092B1 (en) * | 1998-07-09 | 2001-04-03 | Applied Materials, Inc. | Counterbore dielectric plasma etch process particularly useful for dual damascene |
US6930034B2 (en) * | 2002-12-27 | 2005-08-16 | International Business Machines Corporation | Robust ultra-low k interconnect structures using bridge-then-metallization fabrication sequence |
JP4113199B2 (ja) * | 2005-04-05 | 2008-07-09 | 株式会社東芝 | 半導体装置 |
US7371684B2 (en) * | 2005-05-16 | 2008-05-13 | International Business Machines Corporation | Process for preparing electronics structures using a sacrificial multilayer hardmask scheme |
JP2013120786A (ja) * | 2011-12-06 | 2013-06-17 | Toshiba Corp | 半導体記憶装置 |
JP6327970B2 (ja) * | 2014-06-19 | 2018-05-23 | 東京エレクトロン株式会社 | 絶縁膜をエッチングする方法 |
CN107004719B (zh) * | 2014-11-28 | 2020-07-03 | 夏普株式会社 | 半导体装置及其制造方法 |
US9406693B1 (en) * | 2015-04-20 | 2016-08-02 | Sandisk Technologies Llc | Selective removal of charge-trapping layer for select gate transistors and dummy memory cells in 3D stacked memory |
US9484298B1 (en) * | 2015-07-02 | 2016-11-01 | Kabushiki Kaisha Toshiba | Non-volatile memory device |
CN106548979A (zh) * | 2016-12-28 | 2017-03-29 | 武汉华星光电技术有限公司 | 层叠无机膜的蚀刻方法 |
CN108630657B (zh) * | 2017-03-24 | 2020-12-15 | 联华电子股份有限公司 | 半导体结构及其制作方法 |
US20180286707A1 (en) * | 2017-03-30 | 2018-10-04 | Lam Research Corporation | Gas additives for sidewall passivation during high aspect ratio cryogenic etch |
US11417534B2 (en) * | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
JP2021180276A (ja) * | 2020-05-15 | 2021-11-18 | キオクシア株式会社 | 記憶装置 |
-
2018
- 2018-12-26 FR FR1874151A patent/FR3091410B1/fr active Active
-
2019
- 2019-12-10 US US16/709,251 patent/US11469095B2/en active Active
-
2022
- 2022-09-08 US US17/940,758 patent/US20230005735A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
FR3091410A1 (fr) | 2020-07-03 |
US20200211835A1 (en) | 2020-07-02 |
US11469095B2 (en) | 2022-10-11 |
US20230005735A1 (en) | 2023-01-05 |
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