JP6033496B2 - 垂直nand素子のための新規のマスク除去方法 - Google Patents
垂直nand素子のための新規のマスク除去方法 Download PDFInfo
- Publication number
- JP6033496B2 JP6033496B2 JP2016509158A JP2016509158A JP6033496B2 JP 6033496 B2 JP6033496 B2 JP 6033496B2 JP 2016509158 A JP2016509158 A JP 2016509158A JP 2016509158 A JP2016509158 A JP 2016509158A JP 6033496 B2 JP6033496 B2 JP 6033496B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- gas
- plasma
- containing gas
- ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 80
- 239000007789 gas Substances 0.000 claims description 167
- 239000000758 substrate Substances 0.000 claims description 76
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 28
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 28
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 28
- 229910052736 halogen Inorganic materials 0.000 claims description 25
- 150000002367 halogens Chemical class 0.000 claims description 25
- 238000012545 processing Methods 0.000 claims description 25
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 22
- 239000001257 hydrogen Substances 0.000 claims description 22
- 229910052739 hydrogen Inorganic materials 0.000 claims description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 20
- 239000001301 oxygen Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- 229910052731 fluorine Inorganic materials 0.000 claims description 8
- 239000011737 fluorine Substances 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 238000011143 downstream manufacturing Methods 0.000 claims 1
- 210000002381 plasma Anatomy 0.000 description 65
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 36
- 230000008569 process Effects 0.000 description 23
- 238000005530 etching Methods 0.000 description 18
- 235000012239 silicon dioxide Nutrition 0.000 description 17
- 239000000377 silicon dioxide Substances 0.000 description 16
- 150000004767 nitrides Chemical class 0.000 description 15
- 238000002203 pretreatment Methods 0.000 description 13
- 239000000126 substance Substances 0.000 description 13
- 239000000203 mixture Substances 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 11
- 239000010410 layer Substances 0.000 description 10
- 230000001965 increasing effect Effects 0.000 description 8
- 238000009616 inductively coupled plasma Methods 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 7
- 238000012805 post-processing Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 238000007781 pre-processing Methods 0.000 description 6
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 5
- 229910002091 carbon monoxide Inorganic materials 0.000 description 5
- 230000006698 induction Effects 0.000 description 5
- 238000009832 plasma treatment Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 4
- 210000004027 cell Anatomy 0.000 description 3
- 230000003750 conditioning effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000013074 reference sample Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
- H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
- H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01001—Hydrogen [H]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01008—Oxygen [O]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/011—Groups of the periodic table
- H01L2924/01111—Halogens
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Analytical Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Description
本発明は米国仮出願第61/900425号(2013年11月6日提出)の優先権を主張し、前記は参照をもってその全文が本願内に開示されるものとする。
本開示は一般に、マスク材料の除去、およびより特定には、半導体素子、例えばNAND素子からマスク材料を除去することができる方法に関する。
半導体産業において、NANDフラッシュメモリ素子の開発は、ビット密度の増加と同時に、ビットあたりのコストの削減を目指している。最近では、テラビットセルアレイトランジスタ(TCAT)技術を使用する垂直NANDフラッシュメモリセルアレイの使用が、その金属ゲート・シリコン・酸化物・窒化物・酸化物・シリコン(SONOS)セル構造に関する様々な利点を使用する前記技術の能力ゆえに、重要性を増してきている。前記の利点は、消去速度がより速いこと、Vthのマージンがより広いこと、および保持特性が改善されていることを含む。SONOS構造では、各々の垂直NANDスタックにおける酸化物と窒化物との間の交互の20層より多くの層があることがあり、その結果、ワード/線(W/L)カットエッチングに続くエッチングまたは剥離工程は、高いアスペクト比(HAR)のトレンチが存在することによって、非常に困難になることがある。この問題に取り組むため、新規のマスク材料が開発されている。そのような群の新規のマスク材料の1つは、ドープされたアモルファスカーボン(DaC)膜である。しかしながら、従来の剥離工程では、DaC膜のマスクの除去速度は約500オングストローム/分未満であり、これは従来の剥離工程を使用して従来のアモルファスカーボン膜で達成できる除去速度よりも遙かに低い除去速度である。
本発明の態様および利点は、以下の記載においてある程度示され、または記載から明らかであることができるか、または本発明の実施を通じて教示され得る。
基板の処理において使用されるプラズマを生成すること、その際、前記プラズマは酸素含有ガス、ハロゲン含有ガスおよび水素含有ガスを含む、および
基板を前記プラズマに曝露させることによって、基板を処理すること
を含む。
添付の図面を参照して、最良の実施方式を含む、完全且つ当業者にとって実施可能な開示を、本明細書の以下の部分においてより具体的に示す。
本開示の実施態様が詳細に参照され、その1つまたは2つの例は図面内に図示されている。各々の例は実施態様の説明のために提供され、実施態様を限定するものではない。実際に、当業者にとって、該実施態様において、本開示の範囲または主旨から逸脱することなく様々な変更および変法を行うことができることが明らかである。例えば、1つの実施態様の一部として説明または記載される特徴を、別の実施態様と共に使用することができ、さらに他の実施態様がもたらされる。従って、本開示は、特許請求の範囲内のそのような変更および変法並びにそれらの等価物を含むことが意図されている。
例1は図4〜8を参照する。ホウ素をドープされたアモルファスカーボンのマスク層を含有する15のSONOS基板を処理チャンバー内に設置し、その後、各々の基板を、プラズマ生成チャンバー内で形成されたプラズマで処理した。基板を処理するために使用されたプラズマは、O2、CF4、およびH2ガスを含んだ。様々な処理条件がホウ素をドープされたアモルファスカーボン(BDaC)層、窒化ケイ素、および二酸化ケイ素のエッチング速度に及ぼす影響を見るために、プラズマ中のCF4のパーセンテージを、ガスの全体積の1%、1.5%、または2%に調節し、且つ、H2ガスのパーセンテージ対CF4ガスのパーセンテージの比を、0.5、1、2、3または4に調節した。その後、BDaC層、窒化ケイ素および二酸化ケイ素のエッチング速度を測定した。次に、BDaC対窒化ケイ素の選択性およびBDaC対二酸化ケイ素の選択性を、各々の処理条件に対して計算した。結果を図4〜8に示す。
例1に示されるとおり、本開示のプラズマ化学物質はBDaCのエッチング速度を高めることができるのだが、それは窒化ケイ素および二酸化ケイ素のエッチングももたらすことがあり、それは窒化物材料の損失が多すぎるせいで、基板膜中のピンホールの形成または他の欠陥をみちびきかねない。上記で議論された前処理および後処理段階の効果は図9で実証される。特に、ベースライン(baseline)/調節ガスで処理された基板を、O2/H2/CF4ガス混合物で300秒間処理した; ベースライン/調節ガスおよび後処理ガスで処理された基板をO2/H2/CF4ガス混合物で300秒間処理し、次いでN2/H2ガス混合物で60秒間処理した; 前処理およびベースライン/調節ガスで処理された基板を、O2で60秒間処理し、次いでO2/H2/CF4ガス混合物で300秒間処理した; および、前処理、ベースライン/調節ガス、および後処理ガスで処理された基板を、O2で30秒間処理し、O2/H2/CF4で300秒間処理し、且つN2/H2で30秒間処理した。その後、各々の基板(窒化ケイ素膜)上で見つけられたピンホールの数を計数し、且つ、前処理または後処理段階が実施されていない参考試料と比較した。示されるとおり、前処理および後処理段階は、窒化ケイ素膜中に形成されるピンホール数の低減をもたらす。前処理と後処理段階との両方に供された基板上ではピンホールは見つからなかった。さらには、前処理だけに供された基板上ではピンホールは見つからなかった。後処理だけに供された基板上では、1つのピンホールが見つかった。その一方で、いかなる前処理段階または後処理段階にも供されていない基板においては、7つのピンホールが見つかった。
Claims (19)
- ドープされたアモルファスカーボンマスクを半導体基板から除去する方法であって、
基板の処理において使用されるプラズマを生成すること、その際、
・ 前記プラズマは酸素含有ガス、ハロゲン含有ガスおよび水素含有ガスを含み、
・ 前記ハロゲン含有ガスが、ガスの全体積に対して1%〜2%の範囲である量で存在し、
・ プラズマ中の水素含有ガスの量対ハロゲン含有ガスの量の比が、0.001〜1の範囲であり、
・ 前記プラズマがプラズマチャンバー内で生成される、
および
基板を下流の処理チャンバー内で前記プラズマに曝露させることによって、基板を処理し、前記ドープされたアモルファスカーボンマスクを除去すること
を含む、
前記方法。 - 前記酸素含有ガスがO2である、請求項1に記載の方法。
- 前記ハロゲン含有ガスがフッ素を含む、請求項1に記載の方法。
- 前記ハロゲン含有ガスがテトラフルオロメタン(CF4)である、請求項3に記載の方法。
- 前記水素含有ガスがH2である、請求項1に記載の方法。
- ドープされたアモルファスカーボンマスクが、ホウ素をドープされたアモルファスカーボンマスクまたは窒素をドープされたアモルファスカーボンマスクである、請求項1に記載の方法。
- マスクの除去が、125ワット〜13500ワットの範囲である源の電力で行われる、請求項1に記載の方法。
- マスクの除去が、1ミリトール[(101325×10 -3 )/760Pa]〜4000ミリトール[(101325×4000×10 -3 )/760Pa]の範囲である圧力で行われる、請求項1に記載の方法。
- 5℃〜300℃の範囲である温度で基板をプラズマに曝露させる、請求項1に記載の方法。
- 基板を前記プラズマに1秒〜600秒の範囲である時間の間曝露させることによって基板を処理する、請求項1に記載の方法。
- ドープされたアモルファスカーボンマスクを1000オングストローム/分〜12000オングストローム/分の範囲である速度で除去する、請求項1に記載の方法。
- 酸素含有ガスが、基板1平方センチメートルあたり0.03標準立方センチメートル毎分〜基板1平方センチメートルあたり15標準立方センチメートル毎分の流量を有する、請求項1に記載の方法。
- ハロゲン含有ガスが、基板1平方センチメートルあたり0.007標準立方センチメートル毎分〜基板1平方センチメートルあたり0.3標準立方センチメートル毎分の流量を有する、請求項1に記載の方法。
- 水素含有ガスが、基板1平方センチメートルあたり0.02標準立方センチメートル毎分〜基板1平方センチメートルあたり0.5標準立方センチメートル毎分の流量を有する、請求項1に記載の方法。
- 基板をプラズマに曝露させる前に前処理ガスを基板に施与し、その際、前記前処理ガスが酸素、窒素またはそれらの組み合わせを含む、請求項1に記載の方法。
- 前処理ガスの流量が、基板1平方センチメートルあたり0.03標準立方センチメートル毎分〜基板1平方センチメートルあたり15標準立方センチメートル毎分の範囲である、請求項15に記載の方法。
- 酸化ケイ素のクリティカルディメンションロス対窒化ケイ素のクリティカルディメンションロスの比が、0.75〜1.25の範囲である、請求項15に記載の方法。
- 基板をプラズマに曝露させた後に後処理ガスを基板に施与し、その際、前記後処理ガスが酸素、窒素またはそれらの組み合わせを含む、請求項1に記載の方法。
- 後処理ガスの流量が、基板1平方センチメートルあたり0.03標準立方センチメートル毎分〜基板1平方センチメートルあたり15標準立方センチメートル毎分の範囲である、請求項18に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361900425P | 2013-11-06 | 2013-11-06 | |
US61/900,425 | 2013-11-06 | ||
PCT/US2014/063786 WO2015069613A1 (en) | 2013-11-06 | 2014-11-04 | Novel mask removal process strategy for vertical nand device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016517179A JP2016517179A (ja) | 2016-06-09 |
JP6033496B2 true JP6033496B2 (ja) | 2016-11-30 |
Family
ID=53007340
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016509158A Active JP6033496B2 (ja) | 2013-11-06 | 2014-11-04 | 垂直nand素子のための新規のマスク除去方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9396963B2 (ja) |
JP (1) | JP6033496B2 (ja) |
KR (2) | KR102132361B1 (ja) |
CN (1) | CN104956476B (ja) |
SG (1) | SG11201600440VA (ja) |
WO (1) | WO2015069613A1 (ja) |
Families Citing this family (140)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9324576B2 (en) | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US8999856B2 (en) | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
US8808563B2 (en) | 2011-10-07 | 2014-08-19 | Applied Materials, Inc. | Selective etch of silicon by way of metastable hydrogen termination |
US9267739B2 (en) | 2012-07-18 | 2016-02-23 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US9373517B2 (en) | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US9034770B2 (en) | 2012-09-17 | 2015-05-19 | Applied Materials, Inc. | Differential silicon oxide etch |
US9023734B2 (en) | 2012-09-18 | 2015-05-05 | Applied Materials, Inc. | Radical-component oxide etch |
US9390937B2 (en) | 2012-09-20 | 2016-07-12 | Applied Materials, Inc. | Silicon-carbon-nitride selective etch |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US8969212B2 (en) | 2012-11-20 | 2015-03-03 | Applied Materials, Inc. | Dry-etch selectivity |
US8980763B2 (en) | 2012-11-30 | 2015-03-17 | Applied Materials, Inc. | Dry-etch for selective tungsten removal |
US9111877B2 (en) | 2012-12-18 | 2015-08-18 | Applied Materials, Inc. | Non-local plasma oxide etch |
US8921234B2 (en) | 2012-12-21 | 2014-12-30 | Applied Materials, Inc. | Selective titanium nitride etching |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US9040422B2 (en) | 2013-03-05 | 2015-05-26 | Applied Materials, Inc. | Selective titanium nitride removal |
US20140271097A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
US9493879B2 (en) | 2013-07-12 | 2016-11-15 | Applied Materials, Inc. | Selective sputtering for pattern transfer |
US9773648B2 (en) | 2013-08-30 | 2017-09-26 | Applied Materials, Inc. | Dual discharge modes operation for remote plasma |
US9576809B2 (en) | 2013-11-04 | 2017-02-21 | Applied Materials, Inc. | Etch suppression with germanium |
US9520303B2 (en) | 2013-11-12 | 2016-12-13 | Applied Materials, Inc. | Aluminum selective etch |
US9245762B2 (en) | 2013-12-02 | 2016-01-26 | Applied Materials, Inc. | Procedure for etch rate consistency |
US9287095B2 (en) | 2013-12-17 | 2016-03-15 | Applied Materials, Inc. | Semiconductor system assemblies and methods of operation |
US9287134B2 (en) | 2014-01-17 | 2016-03-15 | Applied Materials, Inc. | Titanium oxide etch |
US9293568B2 (en) | 2014-01-27 | 2016-03-22 | Applied Materials, Inc. | Method of fin patterning |
US9396989B2 (en) | 2014-01-27 | 2016-07-19 | Applied Materials, Inc. | Air gaps between copper lines |
US9385028B2 (en) | 2014-02-03 | 2016-07-05 | Applied Materials, Inc. | Air gap process |
US9499898B2 (en) | 2014-03-03 | 2016-11-22 | Applied Materials, Inc. | Layered thin film heater and method of fabrication |
US9299575B2 (en) | 2014-03-17 | 2016-03-29 | Applied Materials, Inc. | Gas-phase tungsten etch |
US9299537B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9299538B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9903020B2 (en) | 2014-03-31 | 2018-02-27 | Applied Materials, Inc. | Generation of compact alumina passivation layers on aluminum plasma equipment components |
US9269590B2 (en) | 2014-04-07 | 2016-02-23 | Applied Materials, Inc. | Spacer formation |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
US9406523B2 (en) | 2014-06-19 | 2016-08-02 | Applied Materials, Inc. | Highly selective doped oxide removal method |
US9378969B2 (en) * | 2014-06-19 | 2016-06-28 | Applied Materials, Inc. | Low temperature gas-phase carbon removal |
US9425058B2 (en) | 2014-07-24 | 2016-08-23 | Applied Materials, Inc. | Simplified litho-etch-litho-etch process |
US9496167B2 (en) | 2014-07-31 | 2016-11-15 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
US9378978B2 (en) | 2014-07-31 | 2016-06-28 | Applied Materials, Inc. | Integrated oxide recess and floating gate fin trimming |
US9659753B2 (en) | 2014-08-07 | 2017-05-23 | Applied Materials, Inc. | Grooved insulator to reduce leakage current |
US9553102B2 (en) | 2014-08-19 | 2017-01-24 | Applied Materials, Inc. | Tungsten separation |
US9355856B2 (en) | 2014-09-12 | 2016-05-31 | Applied Materials, Inc. | V trench dry etch |
US9368364B2 (en) | 2014-09-24 | 2016-06-14 | Applied Materials, Inc. | Silicon etch process with tunable selectivity to SiO2 and other materials |
US9478434B2 (en) | 2014-09-24 | 2016-10-25 | Applied Materials, Inc. | Chlorine-based hardmask removal |
US9613822B2 (en) | 2014-09-25 | 2017-04-04 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US9299583B1 (en) | 2014-12-05 | 2016-03-29 | Applied Materials, Inc. | Aluminum oxide selective etch |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US9502258B2 (en) | 2014-12-23 | 2016-11-22 | Applied Materials, Inc. | Anisotropic gap etch |
US9343272B1 (en) | 2015-01-08 | 2016-05-17 | Applied Materials, Inc. | Self-aligned process |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US9373522B1 (en) | 2015-01-22 | 2016-06-21 | Applied Mateials, Inc. | Titanium nitride removal |
US9449846B2 (en) | 2015-01-28 | 2016-09-20 | Applied Materials, Inc. | Vertical gate separation |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
US9865459B2 (en) * | 2015-04-22 | 2018-01-09 | Applied Materials, Inc. | Plasma treatment to improve adhesion between hardmask film and silicon oxide film |
CN106298668A (zh) * | 2015-06-12 | 2017-01-04 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制作方法和电子装置 |
US9691590B2 (en) * | 2015-06-29 | 2017-06-27 | Lam Research Corporation | Selective removal of boron doped carbon hard mask layers |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
CN109690735B (zh) * | 2016-09-14 | 2023-02-21 | 玛特森技术公司 | 用于高纵横比结构的剥离方法 |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US9721789B1 (en) | 2016-10-04 | 2017-08-01 | Applied Materials, Inc. | Saving ion-damaged spacers |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
WO2018111333A1 (en) | 2016-12-14 | 2018-06-21 | Mattson Technology, Inc. | Atomic layer etch process using plasma in conjunction with a rapid thermal activation process |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10790119B2 (en) * | 2017-06-09 | 2020-09-29 | Mattson Technology, Inc | Plasma processing apparatus with post plasma gas injection |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10544519B2 (en) * | 2017-08-25 | 2020-01-28 | Aixtron Se | Method and apparatus for surface preparation prior to epitaxial deposition |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
TWI716818B (zh) | 2018-02-28 | 2021-01-21 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
WO2020031224A1 (ja) * | 2018-08-06 | 2020-02-13 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法およびプラズマアッシング装置 |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
JP2022512802A (ja) * | 2018-10-26 | 2022-02-07 | マトソン テクノロジー インコーポレイテッド | ハードマスクを除去するための水蒸気ベースのフッ素含有プラズマ |
US11049728B2 (en) * | 2018-10-31 | 2021-06-29 | Entegris, Inc. | Boron-doped amorphous carbon hard mask and related methods |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
CN112368807A (zh) * | 2018-12-21 | 2021-02-12 | 玛特森技术公司 | 工件的表面平滑化 |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
US11189464B2 (en) * | 2019-07-17 | 2021-11-30 | Beijing E-town Semiconductor Technology Co., Ltd. | Variable mode plasma chamber utilizing tunable plasma potential |
WO2021255812A1 (ja) | 2020-06-16 | 2021-12-23 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4961820A (en) * | 1988-06-09 | 1990-10-09 | Fujitsu Limited | Ashing method for removing an organic film on a substance of a semiconductor device under fabrication |
US5302240A (en) * | 1991-01-22 | 1994-04-12 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
US5789320A (en) | 1996-04-23 | 1998-08-04 | International Business Machines Corporation | Plating of noble metal electrodes for DRAM and FRAM |
JP2001308078A (ja) * | 2000-02-15 | 2001-11-02 | Canon Inc | 有機物除去方法、半導体装置の製造方法及び有機物除去装置並びにシステム |
ATE489726T1 (de) * | 2000-09-19 | 2010-12-15 | Mattson Tech Inc | Verfahren zur ausbildung dielektrischer filme |
US7187031B2 (en) * | 2002-05-31 | 2007-03-06 | Sharp Kabushiki Kaisha | Semiconductor device having a low dielectric constant film and manufacturing method thereof |
US6764947B1 (en) * | 2003-02-14 | 2004-07-20 | Advanced Micro Devices, Inc. | Method for reducing gate line deformation and reducing gate line widths in semiconductor devices |
US6939794B2 (en) * | 2003-06-17 | 2005-09-06 | Micron Technology, Inc. | Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device |
US7105431B2 (en) * | 2003-08-22 | 2006-09-12 | Micron Technology, Inc. | Masking methods |
KR100510558B1 (ko) * | 2003-12-13 | 2005-08-26 | 삼성전자주식회사 | 패턴 형성 방법 |
US7064078B2 (en) * | 2004-01-30 | 2006-06-20 | Applied Materials | Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme |
KR100801308B1 (ko) * | 2005-11-12 | 2008-02-11 | 주식회사 하이닉스반도체 | 고선택비 하드마스크를 이용한 트렌치 형성 방법 및 그를이용한 반도체소자의 소자분리 방법 |
US20070200179A1 (en) | 2006-02-24 | 2007-08-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Strain enhanced CMOS architecture with amorphous carbon film and fabrication method of forming the same |
US7977245B2 (en) * | 2006-03-22 | 2011-07-12 | Applied Materials, Inc. | Methods for etching a dielectric barrier layer with high selectivity |
KR101179111B1 (ko) * | 2007-02-09 | 2012-09-07 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 및 기억 매체 |
JP4919871B2 (ja) | 2007-02-09 | 2012-04-18 | 東京エレクトロン株式会社 | エッチング方法、半導体装置の製造方法および記憶媒体 |
US7807064B2 (en) * | 2007-03-21 | 2010-10-05 | Applied Materials, Inc. | Halogen-free amorphous carbon mask etch having high selectivity to photoresist |
CN101451269B (zh) * | 2007-12-05 | 2011-04-06 | 中国科学院物理研究所 | 一种制备厘米级单层或双层有序单晶石墨层的方法 |
CA2653581A1 (en) * | 2009-02-11 | 2010-08-11 | Kenneth Scott Alexander Butcher | Migration and plasma enhanced chemical vapour deposition |
JP2011233878A (ja) * | 2010-04-09 | 2011-11-17 | Elpida Memory Inc | 半導体装置の製造方法 |
KR20120042045A (ko) * | 2010-10-22 | 2012-05-03 | 에스케이하이닉스 주식회사 | 반도체 소자의 제조 방법 |
CN103021838B (zh) * | 2011-09-27 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | 无定形碳处理方法及采用无定形碳作为硬掩膜的刻蚀方法 |
CN102610493B (zh) * | 2012-03-22 | 2015-08-26 | 上海华力微电子有限公司 | 一种去除无定形碳薄膜循环利用硅片的方法 |
US20140216498A1 (en) * | 2013-02-06 | 2014-08-07 | Kwangduk Douglas Lee | Methods of dry stripping boron-carbon films |
-
2014
- 2014-11-04 KR KR1020177003675A patent/KR102132361B1/ko active IP Right Grant
- 2014-11-04 US US14/532,030 patent/US9396963B2/en active Active
- 2014-11-04 KR KR1020157019622A patent/KR20150107756A/ko active Application Filing
- 2014-11-04 SG SG11201600440VA patent/SG11201600440VA/en unknown
- 2014-11-04 CN CN201480006016.1A patent/CN104956476B/zh active Active
- 2014-11-04 JP JP2016509158A patent/JP6033496B2/ja active Active
- 2014-11-04 WO PCT/US2014/063786 patent/WO2015069613A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
SG11201600440VA (en) | 2016-02-26 |
JP2016517179A (ja) | 2016-06-09 |
CN104956476A (zh) | 2015-09-30 |
US9396963B2 (en) | 2016-07-19 |
US20150126035A1 (en) | 2015-05-07 |
KR20170018117A (ko) | 2017-02-15 |
KR102132361B1 (ko) | 2020-07-10 |
WO2015069613A1 (en) | 2015-05-14 |
CN104956476B (zh) | 2017-11-14 |
KR20150107756A (ko) | 2015-09-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6033496B2 (ja) | 垂直nand素子のための新規のマスク除去方法 | |
US11062910B2 (en) | Surface treatment of silicon or silicon germanium surfaces using organic radicals | |
TWI662617B (zh) | 無鹵素之氣相矽蝕刻 | |
US10901321B2 (en) | Strip process for high aspect ratio structure | |
TWI510669B (zh) | 於裸露矽表面而非氧化物表面之聚合物膜選擇性沉積 | |
US11107693B2 (en) | Method for high aspect ratio photoresist removal in pure reducing plasma | |
US20140342569A1 (en) | Near surface etch selectivity enhancement | |
TWI598704B (zh) | 用於改良之元件完整性之光阻剝除處理 | |
TW201611113A (zh) | 電漿處理方法 | |
TW202032661A (zh) | 用於移除硬遮罩之以水蒸氣為基礎的含氟電漿 | |
KR102476308B1 (ko) | 공극들을 형성하기 위한 시스템들 및 방법들 | |
JP2009188256A (ja) | プラズマエッチング方法及び記憶媒体 | |
TW202008461A (zh) | 電漿處理方法及電漿灰化裝置 | |
JP2005252031A (ja) | プラズマ窒化方法 | |
US9601333B2 (en) | Etching process |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20160517 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160613 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160909 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20161011 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20161025 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6033496 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313114 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |