TW201826383A - 選擇性的SiN側向凹部 - Google Patents
選擇性的SiN側向凹部 Download PDFInfo
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- TW201826383A TW201826383A TW106134428A TW106134428A TW201826383A TW 201826383 A TW201826383 A TW 201826383A TW 106134428 A TW106134428 A TW 106134428A TW 106134428 A TW106134428 A TW 106134428A TW 201826383 A TW201826383 A TW 201826383A
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- Prior art keywords
- tantalum nitride
- region
- plasma
- containing precursor
- etching method
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- 238000000034 method Methods 0.000 claims abstract description 126
- 239000002243 precursor Substances 0.000 claims abstract description 101
- 238000005530 etching Methods 0.000 claims abstract description 87
- 238000012545 processing Methods 0.000 claims abstract description 79
- 239000000758 substrate Substances 0.000 claims abstract description 65
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 44
- 239000011737 fluorine Substances 0.000 claims abstract description 44
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 28
- 239000001301 oxygen Substances 0.000 claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 105
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 14
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 14
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 239000002002 slurry Substances 0.000 claims description 7
- 238000010248 power generation Methods 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 4
- 239000000463 material Substances 0.000 description 47
- 230000008569 process Effects 0.000 description 44
- 239000007789 gas Substances 0.000 description 38
- 238000005516 engineering process Methods 0.000 description 28
- 150000002500 ions Chemical class 0.000 description 22
- 239000012530 fluid Substances 0.000 description 16
- 239000003989 dielectric material Substances 0.000 description 15
- 238000000151 deposition Methods 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- 238000001039 wet etching Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 229910000449 hafnium oxide Inorganic materials 0.000 description 6
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000011148 porous material Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 5
- 150000003254 radicals Chemical class 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
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- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 206010062717 Increased upper airway secretion Diseases 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- SPPCMVNDPDQNRG-UHFFFAOYSA-L [F-].[F-].[Sb++] Chemical compound [F-].[F-].[Sb++] SPPCMVNDPDQNRG-UHFFFAOYSA-L 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- QLOAVXSYZAJECW-UHFFFAOYSA-N methane;molecular fluorine Chemical compound C.FF QLOAVXSYZAJECW-UHFFFAOYSA-N 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- OMRLRLKIWPPBAY-UHFFFAOYSA-N niobium(5+) oxygen(2-) yttrium(3+) Chemical compound [O--].[O--].[O--].[O--].[Y+3].[Nb+5] OMRLRLKIWPPBAY-UHFFFAOYSA-N 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 208000026435 phlegm Diseases 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000002336 sorption--desorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
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- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Abstract
用於側向蝕刻氮化矽的示例性方法可包括:將含氟前驅物和含氧前驅物流入半導體處理腔室的遠端電漿區域內。所述方法可包括:在遠端電漿區域內形成電漿,以生成含氟前驅物和含氧前驅物的電漿流出物。所述方法還可包括:將電漿流出物流入半導體處理腔室的處理區域內。基板可被安置於處理區域內,且基板可包括溝槽,溝槽被形成穿過堆疊層,堆疊層包括交替的氮化矽層和氧化矽層。所述方法還可包括:在實質上維持氧化矽層的同時,從溝槽的側壁側向蝕刻氮化矽層。氮化矽層從溝槽的側壁被側向蝕刻小於10 nm。
Description
本技術與半導體製程及設備有關。具體而言,本技術與側向蝕刻垂直結構中的氮化矽有關。
透過在基板表面上生產錯綜複雜的經圖案化材料層之製程,可製作積體電路。在基板上生產經圖案化材料需要受控的方法以移除暴露的材料。化學蝕刻可用於各種目的,包括將光阻中的圖案轉移至下方層內、薄化層或薄化已經存在於表面上的特徵之側向維度。通常,期望具有蝕刻一種材料比蝕刻另一種材料還快的蝕刻製程,以有助於,例如,圖案轉移製程。此類蝕刻製程可說是對第一材料有選擇性。材料、電路與製程多樣化的結果是,蝕刻製程已被開發成具有對多種材料的選擇性。
可根據製程中使用的材料將蝕刻製程定義為濕式或乾式。濕式HF蝕刻優先移除氧化矽甚於其它介電質及材料。然而,濕式製程可能難以穿透某些受限的溝槽,且有時候也可能使餘留的材料變形。在基板處理區域內形成的局部電漿中產生的乾式蝕刻可穿透更為受限的溝槽,並對精細的餘留結構顯現較少變形。然而,局部電漿可能透過電弧的產生而在電弧放電時損壞基板。
因此,對於可被用來生產高質量元件及結構的改良的系統及方法有需求。本技術可滿足這些以及其它需求。
用於側向蝕刻氮化矽的方法及系統可包括:將含氟前驅物和含氧前驅物流入半導體處理腔室的遠端電漿區域內。該方法可包括:在遠端電漿區域內形成電漿,以生成含氟前驅物和含氧前驅物的電漿流出物。該方法還可包括:將電漿流出物流入半導體處理腔室的處理區域內。基板可被安置於處理區域內,且基板可包括溝槽,所述溝槽被形成穿過堆疊層,所述堆疊層包括交替的氮化矽層和氧化矽層。該方法還可包括:在實質上維持氧化矽層的同時,從溝槽的側壁側向蝕刻氮化矽層。氮化矽層從溝槽的側壁被側向蝕刻小於10 nm。
在實施例中,含氧前驅物對含氟前驅物之流速比例可為大於或為約50:1。交替材料的堆疊層可包括至少50層交替的氮化矽層和氧化矽層,且溝槽的特徵可為大於或為約100:1的深寬比。在實施例中,可在介於約-100 °C與約100 °C之間的溫度下進行側向蝕刻,且可在小於或為約0 °C的溫度下進行側向蝕刻。可在小於或為約1托的腔室操作壓力下進行側向蝕刻。
在某些實施例中,氮化矽層可被側向蝕刻小於或為約6 nm。此外,側向蝕刻可包括:氧化氮化矽的一部分,以產生氟化氧化物。氟化氧化物內的氟可擴散穿過氮化矽的經氧化部分,以側向蝕刻氮化矽。此外,蝕刻方法可進一步包括:自氮化矽移除氟化氧化物。在實施例中,移除氟化氧化物可包括:以自含氟前驅物和含氫前驅物產生之電漿流出物蝕刻氟化氧化物。在實施例中,溝槽之上方區域處的氮化矽層,與溝槽之下方區域處的氮化矽層之側向蝕刻量的差異可小於約30%。
本技術還可包括蝕刻方法,所述蝕刻方法可包括:將含氟前驅物和含氧前驅物流入半導體處理腔室的遠端電漿區域內。該方法可包括:在遠端電漿區域內形成電漿,以生成含氟和含氧前驅物之初級電漿流出物(primary plasma effluent)。該方法可包括:將初級電漿流出物流入半導體處理腔室的處理區域內。基板可安置於處理區域內,且基板可包括溝槽,溝槽被形成穿過堆疊層,堆疊層包括交替的氮化矽層和氧化矽層。該方法可包括:從溝槽的側壁氧化氮化矽的一部分,以在各氮化矽層中產生氟化氧化物區域。該方法還可包括:將含氟前驅物流入半導體處理腔室的遠端電漿區域,同時生成電漿,以產生繼發電漿流出物(secondary plasma effluent)。該方法可包括:將繼發電漿流出物流入半導體處理腔室的處理區域內。該方法更可進一步包括:從各氮化矽層側向蝕刻氟化氧化物區域。
在示例性方法中,用以產生初級電漿流出物之含氧前驅物對含氟前驅物之流速比例可為大於或為約60:1。在某些實施例中,氮化矽可被氧化達自約1 nm至約8 nm的深度。可與氮化矽層一起至少部分地氧化溝槽的底部,且可蝕刻溝槽的底部小於或為約5 nm。在示例性蝕刻方法期間,半導體處理腔室內的溫度可小於或為約0 °C。從各氮化矽層側向蝕刻氟化氧化物區域可進一步包括:將含氫前驅物流入半導體處理腔室內。氮化矽的經氧化部分可包括較氧化矽層更低質量的氧化物。此外,在示例性方法中,溝槽的上方區域處之氮化矽層與溝槽的下方區域處之氮化矽層在側向蝕刻量上的差異可小於約20%。
相較於習用系統和技術,此類技術可提供多樣優點。舉例而言,所述製程可提供在記憶體孔(memory hole)內精細地減少的層。此外,本技術的實施例之操作可全部在單個腔室中進行。結合以下敘述及隨附圖式可更詳細地描述這些和其它實施例,還有它們的諸多優點和特徵。
在從2D NAND轉換到3D NAND的過程中,許多製程操作從垂直操作修改為水平操作。此外,隨著3D NAND結構在待形成之單元的數量上增長,記憶體孔(memory hole)和其他結構的深寬比會增加,有時候是戲劇性地增加。在3D NAND處理期間,佔位體層(placeholder layer)和介電材料的堆疊可以形成電極間介電質或IPD層。可能會對這些佔位體層進行各種操作,以在完全移除材料並將其替換為金屬之前安置結構。雖然可以將金屬化結合在單元結構的一側上,但是可以先在結構的另一側上進行操作,例如形成浮置閘極(floating gate)或電荷陷阱層(charge-trap layer)。儘管這些層可以形成在記憶體孔內,但在垂直方向上分離的記憶體單元之間可能發生串擾(crosstalk)。減少這種交流的一種方式可包括:在形成這些層之前蝕刻佔位體材料,以允許介電材料進一步將個別的單元材料層與相鄰的單元分開。
因為這些記憶體孔的高深寬比,可能難以穿透整個長度以接近孔的底部處之單元。習用的乾式蝕刻技術可能難以將前驅物充分擴散到記憶體孔的底部。因此,蝕刻劑通常在到達底部單元層之前就開始蝕刻頂部單元層,且可能不會到達底部單元層。這可能最終產生穿過記憶體孔的V形,其中在記憶體孔的頂部或附近的佔位體材料處可能發生實質的蝕刻,而在記憶體孔的底部或附近只有最少的蝕刻,且有時候沒有進行蝕刻。因此,許多習用技術利用濕式蝕刻來接近各單元佔位體材料,以在形成諸如電荷陷阱層之類的層之前進行佔位體的側向蝕刻。然而,濕式蝕刻可能比其它蝕刻技術更強健(robust),且濕式蝕刻可能蝕刻佔位體材料超過必要或期望程度。舉例而言,濕式蝕刻可將各層蝕刻超過10 nm,且可蝕刻各層而幾乎完全穿透至其它記憶體孔,這可能會更難以將單元層(cell layer)安置在適當或期望的位置,且可能使結構弱化而導致變形。
本技術可藉由進行乾式蝕刻製程來克服這些問題,所述乾式蝕刻製程允許前驅物在單元的上方區域發生實質性蝕刻之前充分地擴散通過單元材料。藉由製造一類型的阻障層(barrier layer),可將蝕刻劑減慢到可能完全擴散通過記憶體孔的程度。因此,與其它乾式蝕刻技術不同,可在記憶體孔的頂部和記憶體孔的底部處形成穿過佔位體材料的相似蝕刻輪廓,而可允許在整個垂直堆疊中產生均勻尺寸的單元。此外,整個製程可以在單個腔室中執行,不同於需要在多個腔室之間轉移經處理的基板以進行濕式蝕刻然後乾燥基板的濕式蝕刻技術。
雖然其餘揭示內容將常規地辨別利用所揭示之技術的特定蝕刻製程,但應容易理解到,所述系統及方法同等適用於在所述腔室中可能發生的沉積及清潔製程。因此,本技術不應被視為僅受限作為蝕刻製程或腔室的用途。並且,儘管描述示例性腔室為本技術提供基礎,但應理解,本技術可應用於實際上可允許所述單腔室操作的任何半導體處理腔室。
第 1 圖
繪示了根據實施例之沉積、蝕刻、烘烤及固化腔室的處理系統100之一個實施例的頂視平面圖。在圖中,一對前開式晶圓傳送盒(front opening unified pod;FOUP)102供應各種尺寸的基板,基板可藉由機器手臂104接收,並在被放置在位於串列區(tandem section) 109a-c中的基板處理腔室108a-f之一者內之前,被放置到低壓保持區106內。可使用第二機器手臂110以從保持區106傳輸基板晶圓至基板處理腔室108a-f並返回。各基板處理腔室108a-f可經配備以進行多個基板處理操作,所述操作包括本文所述之乾蝕刻製程,還有週期性層沉積(CLD)、原子層沉積(ALD)、化學氣相沉積(CVD)、物理氣相沉積(PVD)、蝕刻、預清潔、除氣、定向和其它基板製程。
基板處理腔室108a-f可包含用於沉積、退火、固化及/或蝕刻在基板晶圓上的介電膜之一或多個系統部件。在一種配置中,兩對處理腔室(如,108c-d和108e-f)可被用以沉積介電材料於基板上,且第三對處理腔室(如,108a-b),可被用以蝕刻所沉積的介電質。在另一種配置中,所有的三對腔室(如,108a-f)可經配置以蝕刻在基板上的介電膜。所述的製程之任一或多者可在與不同實施例中所示的製造系統分離的(多個)腔室中實施。將理解到,可藉由系統100而思及用於介電膜之沉積、蝕刻、退火和固化腔室的額外配置。
第 2A 圖
繪示在處理腔室內,具有分隔的電漿生成區域之示例性製程腔室系統200的剖視圖。於膜(如,氮化鈦、氮化鉭、鎢、矽、多晶矽、氧化矽、氮化矽、氧氮化矽、氧碳化矽等等)的蝕刻期間,可通過氣體入口組件205將製程氣體流入第一電漿區域215內。遠端電漿系統(RPS)201可選擇地被包括在系統中,且可處理接著行進通過氣體入口組件205的第一氣體。入口組件205可包括兩個或更多個不同的氣體供應通道,其中第二通道(未繪示)可繞過RPS 201 (若包括RPS 201的話)。
冷卻板203、面板217、離子抑制器223、噴淋頭225及基板支撐件265 (基板255設置於基板支撐件265上)被圖示,且各自可根據實施例而被包括。基座265可具有熱交換通道,熱交換流體通過熱交換通道流動,以控制基板的溫度,熱交換通道可被操作以在處理操作期間加熱及/或冷卻基板或晶圓。為了達到相對高的溫度(諸如從高達或約100℃至高於或約1100℃),還可使用嵌入式電阻加熱器元件,以電阻式加熱基座265之晶圓支撐盤(可包含鋁、陶瓷或它們的組合)。
面板217可為金字塔形、錐形,或具有狹窄的頂部分擴大為寬廣的底部分之另一種類似的結構。面板217可額外地如圖所示般為平的,且包括用以分配製程氣體之複數個穿透通道。取決於RPS 201的使用,電漿生成氣體及/或電漿激發物種可穿過在面板217中之複數個孔(繪示在第2B圖中),以更均勻地輸送進入第一電漿區域215。
示例性的配置可包括使氣體入口組件205向氣體供給區域258內打開,氣體供給區域258藉由面板217與第一電漿區域215分隔,使得氣體/物種流經面板217中之孔洞而進入第一電漿區域215。可選擇結構的特徵和操作的特徵,以防止電漿從第一電漿區域215顯著回流返回至供給區域258、氣體入口組件205和流體供給系統210。所圖示之面板217 (或腔室的導電頂部分)和噴淋頭225具有絕緣環220位於這些特徵之間,此允許AC電位相對於噴淋頭225及/或離子抑制器223而被施加到面板217。可將絕緣環220安置於面板217與噴淋頭225之間,及/或於面板217與離子抑制器223之間,使得電容耦合電漿(CCP)形成於第一電漿區域中。可額外將隔板(未繪示)置於第一電漿區域215中,或以其它方式與氣體入口組件205耦接,以影響經過氣體入口組件205進入區域中之流體的流動。
離子抑制器223可包含界定貫穿結構之複數個通孔的板或其它幾何形狀,所述結構經配置以抑制離子性帶電物質離開第一電漿區域215,同時允許未帶電的中性或自由基物種通過離子抑制器223進入位於抑制器與噴淋頭之間的活化氣體輸送區域內。在實施例中,離子抑制器223可包含具有各種通孔配置之穿孔板。這些未帶電的物種可包括高度反應性物種,高度反應性物種與較低反應性載氣經由通孔傳送。如上所註記,通過孔洞的離子物種的遷移可被降低,且在某些情況下被完全地抑制。控制離子物種通過離子抑制器223的數量可有利地加強對被引入與下方的晶圓基板接觸的氣體混合物之控制,這樣可隨之加強對氣體混合物之沉積及/或蝕刻特性的控制。舉例而言,對氣體混合物之離子濃度的調整可顯著地改變氣體混合物的蝕刻選擇性,如,SiNx:SiOx的蝕刻率、Si:SiOx的蝕刻率等等。在沉積被實施的替代實施例中,也可就介電材料改變共形對可流動類型沉積(conformal-to-flowable style deposition)之平衡。
在離子抑制器223中之複數個通孔可經配置以控制活化氣體(亦即,離子物種、自由基物種及/或中性物種)通過離子抑制器223。舉例而言,可控制孔的深寬比(或孔的直徑比長度)及/或孔的幾何形狀,使得在通過離子抑制器223的活化氣體中之離子性帶電物種的流量被減少。離子抑制器223中的孔可包括面向電漿激發區域215之錐形部分,和面向噴淋頭225的圓柱形部分。圓柱形部分可經調整形狀和維度,以控制通往噴淋頭225之離子物種的流量。可調整的電偏壓也可作為附加手段而被施加到離子抑制器223,以控制離子物種通過抑制器的流量。
離子抑制器223可作用以減少或消除從電漿生成區域行進到基板之離子性帶電物種的量。未帶電的中性物種和自由基物種仍可通過在離子抑制器中之開口,以與基板反應。應注意到,在實施例中可能不會對圍繞基板之反應區域中的離子性帶電物種進行完全消除。在某些情況中,欲使離子物種到達基板,以進行蝕刻及/或沉積製程。在這些情況中,離子抑制器可幫助將反應區中之離子物種的濃度控制在能輔助製程的水平。
噴淋頭225與離子抑制器223結合可允許電漿存在第一電漿區域215中,以避免在基板處理區域233中直接激發氣體,同時仍然允許經激發的物種從腔室電漿區域215行進到基板處理區域233內。以此方式,腔室可經配置以防止電漿接觸被蝕刻的基板255。這可以有利地保護基板上圖案化之各種錯綜複雜的結構和膜,若這些結構和膜被所生成的電漿直接接觸的話,可能會被損壞、錯位或以其它方式變形。此外,當電漿被允許接觸基板或接近基板的高度時,氧化物物種蝕刻的速率可能增加。因此,若材料的暴露區域為氧化物,則可藉由將電漿維持遠離基板而進一步保護此材料。
處理系統可進一步包括功率供應器240,功率供應器240可與處理腔室電耦接,以提供電功率給面板217、離子抑制器223、噴淋頭225及/或基座265,以在第一電漿區域215或處理區域233中生成電漿。功率供應器可經配置以根據所進行的製程來輸送可調整的功率量至腔室。這樣的配置可允許在正執行的製程中使用可調節的電漿。與經常呈現有開啟或關閉的功能之遠端電漿單元不同的是,可調節的電漿可經配置以輸送特定的功率量至電漿區域215。這隨之可允許特定電漿特性的發展,使得前驅物可以特定方式解離,以強化由這些前驅物所產生的蝕刻輪廓。
電漿可在噴淋頭225上方之腔室電漿區域215或噴淋頭225下方之基板處理區域233之任一者中被點燃。電漿可存在腔室電漿區域215中,以從流入物(例如,含氟前驅物或其它前驅物)產生自由基前驅物。可將通常在射頻(RF)範圍中之AC電壓施加於處理腔室的導電頂部分(諸如面板217)與噴淋頭225及/或離子抑制器223之間,以於沉積期間在腔室電漿區域215中點燃電漿。RF功率供應器可生成13.56 MHz的高RF頻率,但也可單獨地或與13.56 MHz的頻率結合來生成其它頻率。
第 2B 圖
繪示對通過面板217的處理氣體分佈產生影響之特徵的詳細視圖253。如第2A和2B圖中所示,面板217、冷卻板203及氣體入口組件205相交以限定氣體供給區域258,可從氣體入口205將製程氣體輸送至氣體供給區域258內。氣體可填充氣體供給區域258並通過面板217中的通孔259流至第一電漿區域215。通孔259可經配置而以實質上單向的方式導引流動,使得製程氣體可流入處理區域233內,而可在行進通過面板217之後部分地或完全地防止製程氣體回流至氣體供給區域258內。
在處理腔室區塊200中所用的氣體分佈組件(如噴淋頭225)可被稱為雙通道噴淋頭(DCSH),且將在第3圖中所描述的實施例中額外地詳述。可就允許在處理區域233的外部分離蝕刻劑之蝕刻製程提供雙通道噴淋頭,以在被輸送進入處理區域之前,提供與腔室部件和彼此之間受限的交互作用。
噴淋頭225可包含上板214和下板216。這些板可彼此耦接以界定於這些板之間的容積218。板的耦接可以提供通過上板和下板的第一流體通道219,和通過下板216的第二流體通道221。所形成的通道可經配置以提供單獨經由第二流體通道221而從容積218通過下板216的流體存取,且第一流體通道219可與在這些板和第二流體通道221之間的容積218流體地隔離。可通過氣體分佈組件225的側面而流體地存取容積218。
第 3 圖
為根據實施例與處理腔室一起使用之噴淋頭325的底視圖。噴淋頭325可對應第2A圖中所繪示的噴淋頭225。顯示第一流體通道219的視圖之穿孔365可具有複數個形狀和配置,以控制和影響通過噴淋頭225之前驅物的流動。顯示第二流體通道221的視圖之小孔375可實質上均勻地分佈在噴淋頭的表面上,甚至在穿孔365之間,且當前驅物離開噴淋頭時,小孔375可幫助提供比其它配置更均勻的前驅物混合。
先前討論的腔室可用於進行示例性方法,包括蝕刻方法。現請參見第 4 圖
,其繪示根據本技術的實施例之方法400中的示例性操作。在方法的第一個操作之前,可在將基板置入腔室的處理區域內之前,以一或多種方式處理基板,而方法400可在腔室中進行。舉例而言,可在基板上形成IPD層,且接著可形成一或多個記憶體孔或溝槽穿過堆疊層。IPD層可包括任何數目的材料,且可包括佔位體材料(placeholder material)及介電材料的交替層。在實施例中,介電材料可為氧化矽或可包括氧化矽,且佔位體材料可為氮化矽或可包括氮化矽。儘管其餘揭示內容將討論氮化矽和氧化矽,可用在這兩種層的任何其它已知材料可替代這些層中之一或多層。如先前描述般,這些操作中的部分或全部可在腔室或系統工具中進行,或者可在相同的系統工具上的不同腔室中進行,所述腔室可包括進行方法400之操作的腔室。
方法400可包括:在操作405,將含氟前驅物和含氧前驅物流入半導體處理腔室的遠端電漿區域內。示例性腔室可為先前描述的腔室200,腔室200可包括RPS單元201或第一電漿區域215中之一或二者。這些區域中之任一或二者可為用於操作405的遠端電漿區域。在操作410,可在遠端電漿區域內生成電漿,這樣可生成含氟前驅物和含氧前驅物的電漿流出物。在操作415,可將電漿流出物流至腔室的處理區域。電漿流出物可在處理區域中與基板交互作用,基板可包括穿過材料的堆疊層而形成之溝槽,材料的堆疊層可包括交替的,例如,氮化矽層和氧化矽層,但也可使用其它佔位體材料及/或介電材料。在操作420,前驅物可側向蝕刻氮化矽層。可透過溝槽(如記憶體孔)進行側向蝕刻,且可從溝槽內的側壁沿著各氮化矽層的暴露部分發生側向蝕刻。在某些實施例中,可在氮化矽層上選擇性地進行側向蝕刻,且可實質上維持氧化矽或其它介電材料的中間層。於示例性操作中,在側向蝕刻操作終止前,方法400可從溝槽的側壁側向蝕刻氮化矽小於10 nm。
方法400可涉及降低蝕刻率以允許發生更完全的擴散、降低吸附/脫附率以允許發生更完全的擴散,或可涉及一種類型的阻障層,蝕刻劑可在某速率下透過所述阻障層擴散,所述速率允許發生通過溝槽的更完全的擴散。舉例而言,方法400可包括:氧化待蝕刻之氮化矽的一部分。因為介電層可為氧化矽或可包括氧化矽,氧化可優先地或排他地發生在經由溝槽暴露的區域(如形成溝槽側壁的區域)中之氮化矽層上。氧化可包括氟或其它蝕刻劑成分,所述蝕刻劑成分可擴散穿過經氧化部分以蝕刻氮化矽層。形成氮化矽的氟化氧化物區域可允許從溝槽或記憶體孔的側壁以受控制的方式移除小於或為約10 nm的氮化矽。
在所述方法中使用的前驅物可包括含氟前驅物還有含氧前驅物。示例性含氟前驅物可為三氟化氮(NF3
),其可被流入遠端電漿區域內,遠端電漿區域可與處理區域分開但流體耦接處理區域。可結合三氟化氮使用其它氟源,或以其它氟源替代三氟化氮。一般而言,可將含氟前驅物流入遠端電漿區域內,且含氟前驅物可包括選自以下群組中之至少一種前驅物:原子氟、二原子氟、三氟化氮、四氟化碳、氟化氫、二氟化氙及可用於或有助於半導體製程的各種其它含氟前驅物。含氧前驅物可包括各種流體,且可包括以下一或多者:原子氧、分子氧、N2
O、NO、NO2
、臭氧或可用於或有助於半導體製程的其它含氧前驅物。前驅物也可包括任何數目的載氣,所述載氣可包括氮、氦、氬或其它稀有氣體(noble gas)、惰性氣體(inert gas)或有用的前驅物。可用載氣來稀釋前驅物,這樣可進一步降低蝕刻率,以允許透過溝槽的充分擴散。
在實施例中,方法400可涉及調節前驅物的氧對氟比例。舉例而言,在實施例中,氧前驅物對氟前驅物的比例可包括大於或為約20:1的流速比例。藉由增加氧流速並限制氟內含物(inclusion),可在蝕刻開始前,在氮化矽的暴露區域上發生氧化。因此,可以類似於阻障層(含氟蝕刻劑可擴散通過所述阻障層)的方式操作氧化層。擴散通過氮化矽的氧化部分的時間可能大於前驅物向下擴散通過記憶體孔或溝槽的時間。以此方式,可在蝕刻氮化矽的暴露區域之前,沿著氮化矽的各暴露區域形成氧化層。然後可以將蝕刻劑均勻分佈通過溝槽和氧化區域,從而允許在氮化矽的各暴露區域上發生實質相似量的蝕刻。類似地,藉由限制混合物中的氟含量,可以控制從氮化矽的各暴露區域蝕刻的材料量。
在示例性方法(如方法400)中,含氧前驅物對含氟前驅物的比例可能與待移除之氮化矽的厚度有關。舉例而言,在可能去除更多氮化矽的方法中,前驅物中可包括額外的含氟前驅物,或可增加操作的時間。為了在溝槽內之氧化矽的各暴露區域上提供小於約10 nm的側向蝕刻,含氧前驅物對含氟前驅物的比例可大於或為約25:1、或可大於或為約30:1、大於或為約35:1、大於或為約40:1、大於或為約45:1、大於或為約50:1、大於或為約55:1、大於或為約60:1、大於或為約65:1、大於或為約70:1、大於或為約75:1、大於或為約80:1或更高,也可為任何所陳述之範圍內所包括的任何較小範圍。舉例而言,大於或為約60:1的流速,可允許在氮化矽的各暴露區域上形成氟化氧化物區域。在實施例中,可將流速比例維持在高於40:1,以減少在整個溝槽長度上蝕刻之氮化矽的量。當混合物中之氟的量增加時,在溝槽頂部處或接近溝槽頂部的氮化矽區域可能會在氧化部分形成之前就開始蝕刻。這樣的話可能仍會在溝槽內產生氮化矽層的輪廓,如從溝槽的頂部至底部的V形輪廓。
因為溝槽或記憶體孔的高深寬比(側向蝕刻可能在所述具有高深寬比的溝槽或記憶體孔中進行),所以習用乾式技術可能無法避免V形輪廓。示例性溝槽的直徑或寬度可能是數十或數奈米或更小,同時溝槽的高度可以在幾微米或更大的數量級。如此可能形成高於20:1、高於50:1、高於75:1、高於100:1或甚至更高的深寬比或高度對寬度比例。因此,在實施例中,可在各溝槽內形成並處理超過25層、超過50層、超過75層或超過一百層之交替的佔位體材料及介電材料。
由於乾式蝕刻劑或氣體蝕刻劑可能行進更長的長度,所以在蝕刻劑達到溝槽的底部之前,溝槽的頂部區域可能暴露於大量的蝕刻劑。以此方式,位在溝槽的上方區域處之氮化矽可以比溝槽的底部處之部分被蝕刻更多。雖然濕式蝕刻技術可能更均勻地蝕刻氮化矽層,但是由於蝕刻劑的性質和停留時間等原因,濕式蝕刻技術可能無法蝕刻小於10或更多奈米。因此,與本技術不同,沒有習用技術能從各氮化矽層精細地蝕刻一定量的材料(例如僅數奈米),並且在整個溝槽中產生平坦或具實質類似輪廓之經蝕刻的氮化矽。然而,本技術可藉由以所討論的任何方式限制蝕刻劑,以補償更大的擴散路徑,以允許達成更均勻的蝕刻製程。
製程條件也可能影響方法400還有根據本技術的其它蝕刻方法中所進行的操作。在實施例中,可在恆定的溫度期間進行方法400的各操作,而在某些實施例中可在不同的操作期間調整溫度。舉例而言,在實施例中,可將側向蝕刻操作420期間的基板、基座或腔室溫度維持在介於約-100 °C與約100 °C之間。也可將溫度維持在低於或為約80 °C、低於或為約60 °C、低於或為約40 °C、低於或為約20 °C、低於或為約0 °C、低於或為約-20 °C、低於或為約-40 °C或更低的溫度。溫度可能影響蝕刻製程本身,且較高的溫度可能產生較高的蝕刻率、增加的蝕刻或其它影響。類似地,較低的溫度可減慢蝕刻操作,並允許在蝕刻之前或在最小蝕刻發生時氧化部分氮化矽。因此,在某些實施例中,將溫度維持在低於或為約0 °C可在溝槽的頂部及溝槽的底部處提供更均勻的氮化矽蝕刻量。隨著溫度上升,蝕刻操作可額外地開始影響介電區域,且可能導致介電材料(如氧化矽)的被暴露轉角或區域的輕微圓化(rounding)。
腔室內的壓力也可能影響所進行的操作,且在實施例中,腔室壓力可維持在低於約10托、低於約5托或低於約1托。在實施例中,低於或為約1托的壓力可使前驅物或電漿流出物更容易流入溝槽或記憶體孔。然而,當壓力降到低於約0.5托時,遠端電漿可能受到影響,並且可能具有降低的穩定性或可能變得不穩定。如先前所提及,遠端電漿可能包括RPS單元,且也可能是與腔室的處理區域實體分隔之腔室的區域或部分,以限制或消除晶圓水平處之電漿。在利用RPS單元的某些實施例中,可以利用扼流器來維持RPS單元內的較高壓力,從而可以腔室內的較低壓力維持電漿穩定性,以改善前驅物或電漿流出物的溝槽內流動。因此,可在腔室中利用渦輪分子泵(turbomolecular pump),以允許將腔室壓力降至數豪毫托,同時將RPS維持在高於或為約0.6托。
可調整腔室條件、流速比例及其它操作性特徵,以對氮化矽區域進行受控制的蝕刻。舉例而言,可從溝槽側壁側向蝕刻各氮化矽區域至小於或為約10 nm的距離或深度。此外,取決於待沉積材料的厚度,本技術可允許側向蝕刻氮化矽至小於或為約9 nm、小於或為約8 nm、小於或為約7 nm、小於或為約6 nm、小於或為約5 nm、小於或為約4 nm、小於或為約3 nm、小於或為約2 nm、小於或為約1 nm或更小的距離或深度。在實施例中,可自溝槽側壁蝕刻各氮化矽層達介於約1 nm與約7 nm之間的深度或距離,或介於約2 nm與約6 nm之間的深度或距離。
藉由進行根據本技術之操作,可相對於蝕刻劑材料之擴散能力降低蝕刻能力,而允許在溝槽或記憶體孔內暴露的各氮化矽區域處進行更均勻、實質上均勻或基本上均勻的蝕刻。在實施例中,在溝槽或記憶體孔的頂部處或接近溝槽或記憶體孔的頂部之氮化矽區域(如從頂部起算2層內、4層內、6層內、8層內、10層內、或更多層內)所具有之從側壁測量的材料蝕刻量,類似於在溝槽或記憶體孔的底部處或接近溝槽或記憶體孔的底部之氮化矽層或區域(如從底部起算2層內、4層內、6層內、8層內、10層內、或更多層內)所具有之從側壁測量的材料蝕刻量。
取決於已被穿過而蝕刻有溝槽或記憶體孔之結構內的全部堆疊層之數目,被比較的所述兩個層可被至少1層、至少5層、至少11層、至少21層、至少51層或更多層隔開。被比較的所述兩個層之側向蝕刻的差異可小於或為約30%,從被蝕刻的上方層的角度而言,不超過下方層的30%。此外,本技術可進行所述兩個層的側向蝕刻,使得所述兩個層之間的氮化矽的被蝕刻量之差異小於或為約25%、小於或為約20%、小於或為約15%、小於或為約10%、小於或為約5%、小於或為約1%或零差異,在零差異的情況中,兩個氧化矽區域被從溝槽的側壁蝕刻至相等的深度或距離。
如上文所註記,側向蝕刻可包括在與溝槽相鄰之氮化矽層的部分處的氧化,且可涉及形成氟化氧化物。氟化氧化物內部或附近的氟可以在操作期間擴散通過層或經氧化部分,以側向蝕刻氮化矽或氮化矽的經氧化部分。在某些實施例中,所述方法可在此階段終止。舉例而言,此製程可部分地移除鄰近溝槽的經氧化之氮化矽的區域,例如約1 nm、約2 nm或更多。因此,即使氧化程度進一步穿透到氮化矽內,也可以進行後續操作,因為所述材料可能僅為佔位體(placeholder),且隨後可以被去除。然而,在某些實施例中,所述方法可進一步包括:從氮化矽移除氟化氧化物。將參照第5圖於下文解釋這些操作,但可包括,例如,以從含氟前驅物及含氫前驅物產生之電漿流出物蝕刻氟化氧化物。
第 5 圖
繪示根據本技術之實施例的方法500中的示例性操作。方法500可包括上文解說之方法400的某些或全部操作,且可包括在上文討論的任何成分或條件。舉例而言,方法500可包括:將含氟前驅物和含氧前驅物流入半導體處理腔室的遠端電漿區域內。在某些實施例中,可將一或多種前驅物流入遠端電漿區域內,同時一或多種其它前驅物可繞過遠端電漿區域,並且可接觸電漿處理後的電漿流出物。遠端電漿區域可包括一或多個遠端電漿區域,所述遠端電漿區域可包括處理腔室的分隔區域,或可包括與處理腔室流體耦接的遠端區塊。因此,可藉由接觸其它自由基成分而僅激發某些前驅物。在其它實施例中,可使所有前驅物流經遠端電漿區域。
在操作505,可由這些前驅物形成電漿,所述前驅物可為初級前驅物(primary precursor)。電漿可生成含氟前驅物及含氧前驅物的初級電漿流出物。可將初級電漿流出物流入處理腔室的處理區域內,其中容納有基板。基板可包括溝槽(如記憶體孔),溝槽形成穿過堆疊層,而堆疊層可包括交替的氮化矽層和氧化矽層,如先前所描述。在操作510,從溝槽側壁延伸之氮化矽的一部分可被初級電漿流出物氧化,以在氮化矽的各層中產生氟化氧化物區域。
隨後,可在與進行氧化操作相同的腔室內進行額外的操作。舉例而言,方法500可進一步包括:在操作515,將含氟前驅物流入半導體處理腔室的遠端電漿區域內,同時生成電漿,以產生繼發電漿流出物。操作515可包括額外的前驅物,如含氫前驅物。含氫前驅物可包括氫、碳氫化合物、水、過氧化氫、或習知技藝者可理解的可包括氫之其它材料。繼發前驅物也可包括諸如載氣或惰性材料等額外的前驅物。可使用一或多種前驅物來產生繼發電漿流出物,且在實施例中,某些或所有前驅物可存在遠端電漿區域中,以產生繼發電漿流出物。此外,一或多種前驅物可繞過遠端電漿區域,並被流入處理腔室的額外區域內。可在處理區域或腔室的某些其它區域中,將這些前驅物與電漿流出物混合。
一但被生成,可將第二電漿流出物流入半導體處理腔室的處理區域內,第二電漿流出物可在處理區域接觸基板並於溝槽內擴散。在操作520,可從各氮化矽層側向蝕刻經氧化的氮化矽或氟化氧化物區域。因此,氮化矽可被氧化達自約1 nm至約8 nm的深度,或先前討論的任何其它範圍。此外,操作510可從溝槽側壁部分地蝕刻氮化矽層,例如達先前註記的任何深度或距離,但可在操作後維持一部分被氧化的氮化矽層。此經氧化區域可能是比,例如,可分隔結構的單元區域之氧化矽的介電層,更低質量的氧化物。因此,側向蝕刻操作520可能涉及相對於高質量氧化矽而言,對低質量氧化矽更具選擇性的製程。
如上文所討論,從溝槽的頂部至溝槽的底部,所述操作可對氧化矽層產生實質上均勻的蝕刻,也稱作頂部對底部負載(top to bottom loading)。這可允許溝槽的上方區域處之氮化矽層與溝槽的下方區域處之氮化矽層在側向蝕刻量上的差異小於約20%,或如先前所討論的任何差異及/或深度。均勻性可能部分發生在進行操作的條件下。舉例而言,用來產生初級電漿流出物之含氧前驅物對含氟前驅物的流速比例可大於或為約60:1。這可允許氧化層的形成,而氟可透過氧化層擴散,且氧化層可在前驅物透過溝槽擴散的同時減緩或降低氮化矽區域的蝕刻率。此外,在蝕刻方法期間,半導體處理腔室內的溫度可小於或為約0 °C,以進一步降低發生的蝕刻率。
請參見第 6A 至 6C 圖
,其繪示根據本技術之實施例的待處理結構600的剖面視圖。如6A圖所圖解,基板605可具有複數個堆疊層覆蓋在基板上,基板可為矽、矽鍺或其它基板材料。所述層可包括IPD層,IPD層包括介電材料610 (介電材料610可為氧化矽)與佔位體材料620 (佔位體材料620可為氮化矽)的交替層。佔位體材料620可以是或可包括將在後續操作中被移除以產生個別記憶體單元的材料。雖然只以7個材料層作圖解,但示例性結構可包括先前討論之任何數量的層。溝槽630 (其可為記憶體孔)可被界定穿過堆疊的結構至基板605的水平。可由側壁632界定溝槽630,側壁632可由介電材料610和佔位體材料620的交替層所構成。
在6B圖中可圖解在已進行根據本技術的方法(如上文中參照第4至5圖所討論者)之後的結構。氮化矽層620的各暴露表面的一部分可被氧化,以產生經氧化區域625。經氧化區域可為氟化氧化物,以蝕刻氮化矽的一部分。儘管未圖解,但氧化區域625可從溝槽630的側壁632部分地內凹,例如,如先前所述達約或大於約1 nm、2 nm、3 nm或更大的距離。舉例而言,由於介電層610已經是氧化物了,因此氧化可不影響介電層610。然而,基板605可包括氧化薄層627,氧化薄層627可小於或等於氮化矽層620之氧化的深度。在其它實施例中,基板可具有最小程度的氧化或實質上沒有氧化。
第6C圖圖解了在已進行根據本技術的進一步方法或操作(如上文中參照第4至5圖所討論者)之後的結構。可進行蝕刻操作來移除氮化矽層620的經氧化部分。蝕刻可移除經氧化部分,因而可形成氮化矽從溝槽630和氧化矽層610內凹的區域。所述層可內凹小於約10 nm、介於約2 nm與約6 nm之間,或在此揭示內容他處所討論的任何範圍內。基板605可在溝槽630的底部處顯現最小的蝕刻,且可被減少到小於或為約5 nm的量,且可被減少到小於或為約3 nm的量、小於或為約2 nm的量、小於或為約1 nm的量,或可在氮化矽的側向蝕刻操作期間實質上維持不變。
在前面的描述中,為解釋的目的,許多的細節已被提出,以提供對本技術之各種實施例的理解。然而,對熟悉該技術者而言明顯的是,可不需這些細節的某部分而實行某些實施例,或可有額外的細節而實行某些實施例。
已經揭露幾個實施例,對熟悉該技術者而言,將可理解各種的修改、替代構造和等效元件可被使用而不背離實施例的精神。此外,一些已知的製程和元件並未被說明,以避免不必要地模糊本技術。故,以上的說明不應被視為限制本技術的範圍。此外,方法或製程可依序或依步驟而說明,但應理解,可同步進行操作,或相較於所列出的順序,以不同的順序進行操作。
當提供一數值範圍時,除非上下文另有明確地說明,應理解在範圍的上限和下限之間之每個中間值(直到下限之單位的最小分數)亦被具體地揭露。在指定的範圍中之任何指定的數值或未指定的中間值及在指定的範圍中之任何其他指定的數值或中間值之間的較窄範圍被涵蓋。這些較小範圍的上限和下限可獨立地被包含或排除在範圍中,且每一範圍(其中包含在較小範圍中的上限和下限之任一者、未包含在較小範圍中的上限或下限,或包含在較小範圍中的上限和下限之兩者)係亦涵蓋於技術內,受到在指定的範圍中任何具體排除的限制。當範圍包含上限和下限之一者或兩者時,排除這些所包含的上限或下限之一者或兩者的範圍亦被包含。
如本文及隨附申請專利範圍中所用,單數形式「一(a、an)」及「該(the)」包括複數的指涉,除非上下文另有明確說明。因此,例如,指涉「一前驅物」包括複數個此前驅物,且指涉「該層」包括指涉一或多個層和本案所屬技術領域中具通常知識者已知的一或多個層的等效物等等。
此外,當在此說明書和以下的申請專利範圍中使用時,用語「包括(comprises(s)、comprising)」、「含有(contain(s)、containing)」、和「包括(include(s)、including)」係意欲具體指明所指定的特徵、整體、部件或操作的存在,但它們不排除一或多個其它特徵、整體、部件、操作、動作或群組的存在或增加。
100‧‧‧處理系統
102‧‧‧前開式晶圓傳送盒
104‧‧‧機器手臂
106‧‧‧低壓保持區
108a~108f‧‧‧處理腔室
109a~109c‧‧‧串列區
110‧‧‧第二機器手臂
200‧‧‧製程腔室系統
201‧‧‧遠端電漿系統
203‧‧‧冷卻板
205‧‧‧氣體入口組件
210‧‧‧流體供給系統
214‧‧‧上板
215‧‧‧第一電漿區域
216‧‧‧下板
217‧‧‧面板
218‧‧‧容積
219‧‧‧第一流體通道
220‧‧‧絕緣環
221‧‧‧第二流體通道
223‧‧‧離子抑制器
225‧‧‧噴淋頭
233‧‧‧基板處理區域
240‧‧‧功率供應器
253‧‧‧詳細視圖
255‧‧‧基板
258‧‧‧氣體供給區域
259‧‧‧通孔
263 265‧‧‧基板支撐件/基座
325‧‧‧噴淋頭
365‧‧‧穿孔
375‧‧‧小孔
400、500‧‧‧方法
405~420、505~502‧‧‧操作
600‧‧‧結構
605‧‧‧基板
610‧‧‧介電材料
620‧‧‧佔位體材料
625‧‧‧經氧化區域
630‧‧‧溝槽
632‧‧‧側壁
藉由參照說明書的其餘部分和圖式,可進一步理解所揭示的技術之本質和優點。
第1圖繪示根據本技術的實施例之示例性處理系統的一個實施例之頂視平面圖。
第2A圖繪示根據本技術的實施例之示例性處理腔室的剖面示意圖。
第2B圖繪示根據本技術的實施例之第2A圖圖解的處理腔室的一部分之詳細視圖。
第3圖繪示根據本技術的實施例之示例性噴淋頭的底部平面視圖。
第4圖繪示根據本技術的實施例之方法中的示例性操作。
第5圖繪示根據本技術的實施例之方法中的示例性操作。
第6A至6C圖繪示根據本技術的實施例之待處理基板的剖面視圖。
上述圖式包括以示意圖方式呈現的若干圖式。應理解上述圖式以說明為目的,且不考慮比例,除非有按比例繪製的具體聲明。此外,作為示意圖,所述圖式被提供來幫助理解,且相較於現實表示可能不包括全部的態樣或資訊,且可能包括用於解說目的之多餘的或誇大的材料。
在附隨的圖式中,類似的部件及/或特徵可具有相同的元件符號。此外,相同類型的各種部件可藉由在元件符號之後加上區分這些類似部件之間的字母而區分。若僅第一元件符號被使用於說明書中,說明係可適用於具有相同第一元件符號的類似部件的任一者,而與字母無關。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
Claims (20)
- 一種蝕刻方法,包含下列步驟: 將一含氟前驅物和一含氧前驅物流入一半導體處理腔室之一遠端電漿區域內;在該遠端電漿區域內形成一電漿,以生成該含氟前驅物和該含氧前驅物之電漿流出物;將該等電漿流出物流入該半導體處理腔室之一處理區域內,其中一基板安置於該處理區域內,且其中該基板包含一溝槽,該溝槽被形成穿過堆疊層,該等堆疊層包括交替的氮化矽層和氧化矽層;以及在實質上維持該等氧化矽層的同時,從該溝槽的側壁側向蝕刻該等氮化矽層,其中該等氮化矽層從該溝槽的該等側壁被側向蝕刻小於10 nm。
- 如請求項1所述之蝕刻方法,其中含氧前驅物對含氟前驅物之一流速比例係大於或為約50:1。
- 如請求項1所述之蝕刻方法,其中該等堆疊層包含至少50層交替的氮化矽層和氧化矽層,且其中該溝槽的特徵在大於或為約100:1的一深寬比。
- 如請求項1所述之蝕刻方法,其中在介於約-100 °C與約100 °C之間的一溫度下進行該側向蝕刻。
- 如請求項4所述之蝕刻方法,其中該溫度係小於或為約0 °C。
- 如請求項1所述之蝕刻方法,其中在小於或為約1托的一腔室操作壓力下進行該側向蝕刻。
- 如請求項1所述之蝕刻方法,其中該等氮化矽層被側向蝕刻小於或為約6 nm。
- 如請求項1所述之蝕刻方法,其中該側向蝕刻包含下列步驟:氧化該氮化矽的一部分,以產生一氟化氧化物。
- 如請求項8所述之蝕刻方法,其中該氟化氧化物內的氟擴散穿過該氮化矽的經氧化部分,以側向蝕刻該氮化矽。
- 如請求項8所述之蝕刻方法,其中該方法進一步包含下列步驟:自該氮化矽移除該氟化氧化物。
- 如請求項10所述之蝕刻方法,其中移除該氟化氧化物包含下列步驟:以自一含氟前驅物和一含氫前驅物產生之電漿流出物蝕刻該氟化氧化物。
- 如請求項1所述之蝕刻方法,其中該溝槽之一上方區域處的一氮化矽層,與該溝槽之一下方區域處的一氮化矽層之側向蝕刻量的差異小於約30%。
- 一種蝕刻方法,包含下列步驟: 將一含氟前驅物和一含氧前驅物流入一半導體處理腔室之一遠端電漿區域內; 在該遠端電漿區域內形成一電漿,以生成該含氟前驅物和該含氧前驅物之初級電漿流出物; 將該等初級電漿流出物流入該半導體處理腔室之一處理區域內,其中一基板安置於該處理區域內,且其中該基板包含一溝槽,該溝槽被形成穿過堆疊層,該等堆疊層包括交替的氮化矽層和氧化矽層; 從該溝槽的側壁氧化該氮化矽的一部分,以在各氮化矽層中產生一氟化氧化物區域; 將一含氟前驅物流入該半導體處理腔室之該遠端電漿區域內,同時生成一電漿,以生成繼發電漿流出物; 將該等繼發電漿流出物流入該半導體處理腔室之該處理區域內;以及 從各氮化矽層側向蝕刻該氟化氧化物區域。
- 如請求項13所述之蝕刻方法,其中用以產生該等初級電漿流出物之含氧前驅物對含氟前驅物之一流速比例係大於或為約60:1。
- 如請求項13所述之蝕刻方法,其中該氮化矽被氧化達自約1 nm至約8 nm的一深度。
- 如請求項13所述之蝕刻方法,其中該溝槽之一底部係至少部分地與該等氮化矽層一起氧化,且其中該溝槽之該底部被蝕刻小於或為約5 nm。
- 如請求項13所述之蝕刻方法,其中在該蝕刻方法期間,該半導體處理腔室內的一溫度係小於或為約0 °C。
- 如請求項13所述之蝕刻方法,其中從各氮化矽層側向蝕刻該氟化氧化物區域進一步包含下列步驟:將一含氫前驅物流入該半導體處理腔室內。
- 如請求項13所述之蝕刻方法,其中氮化矽之該經氧化部分包含較該等氧化矽層更低質量的氧化物。
- 如請求項13所述之蝕刻方法,其中該溝槽之一上方區域處的一氮化矽層,與該溝槽之一下方區域處的一氮化矽層之側向蝕刻量的差異小於約20%。
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CN112740372A (zh) * | 2018-09-21 | 2021-04-30 | 应用材料公司 | 选择性材料移除 |
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TWI836370B (zh) * | 2021-03-12 | 2024-03-21 | 美商應用材料股份有限公司 | 等向性氮化矽移除 |
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JP2019530982A (ja) | 2019-10-24 |
US20180102256A1 (en) | 2018-04-12 |
US10062579B2 (en) | 2018-08-28 |
US20180102255A1 (en) | 2018-04-12 |
WO2018067881A1 (en) | 2018-04-12 |
CN109906500A (zh) | 2019-06-18 |
US10319603B2 (en) | 2019-06-11 |
KR20190053282A (ko) | 2019-05-17 |
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