DE112005001601T5 - Schützende Beschichtung auf einem Substrat und Verfahren zum Herstellen derselben - Google Patents
Schützende Beschichtung auf einem Substrat und Verfahren zum Herstellen derselben Download PDFInfo
- Publication number
- DE112005001601T5 DE112005001601T5 DE112005001601T DE112005001601T DE112005001601T5 DE 112005001601 T5 DE112005001601 T5 DE 112005001601T5 DE 112005001601 T DE112005001601 T DE 112005001601T DE 112005001601 T DE112005001601 T DE 112005001601T DE 112005001601 T5 DE112005001601 T5 DE 112005001601T5
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- making
- same
- protective coating
- protective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
- C04B41/5031—Alumina
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
- C04B41/5062—Borides, Nitrides or Silicides
- C04B41/5063—Aluminium nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0617—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US58605904P | 2004-07-07 | 2004-07-07 | |
PCT/US2005/023784 WO2006005067A2 (en) | 2004-07-07 | 2005-07-06 | Protective coating on a substrate and method of making thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
DE112005001601T5 true DE112005001601T5 (de) | 2007-05-16 |
Family
ID=35542147
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE112005001601T Withdrawn DE112005001601T5 (de) | 2004-07-07 | 2005-07-06 | Schützende Beschichtung auf einem Substrat und Verfahren zum Herstellen derselben |
Country Status (4)
Country | Link |
---|---|
US (3) | US20060165994A1 (de) |
CN (2) | CN101076614A (de) |
DE (1) | DE112005001601T5 (de) |
WO (2) | WO2006017070A2 (de) |
Families Citing this family (143)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060165994A1 (en) * | 2004-07-07 | 2006-07-27 | General Electric Company | Protective coating on a substrate and method of making thereof |
JP4548171B2 (ja) * | 2005-03-24 | 2010-09-22 | ソニー株式会社 | 圧電共振素子およびその製造方法 |
KR101329630B1 (ko) | 2006-04-13 | 2013-11-14 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 가열소자 |
US20080050522A1 (en) * | 2006-08-23 | 2008-02-28 | Atomic Energy Council-Institute Of Nuclear Energy Research | Preparative method for protective layer of susceptor |
DE102006039451A1 (de) * | 2006-08-24 | 2008-03-13 | Oc Oerlikon Balzers Ag | Farbrad |
US7839587B2 (en) * | 2006-08-24 | 2010-11-23 | Oerlikon Trading Ag, Trubbach | Color wheel |
US20080141938A1 (en) * | 2006-12-13 | 2008-06-19 | General Electric Company | Processing apparatus, coated article and method |
CN101595245B (zh) * | 2006-12-28 | 2012-11-07 | 埃克阿泰克有限责任公司 | 用来稳定涂层的方法和设备 |
US20090115060A1 (en) * | 2007-11-01 | 2009-05-07 | Infineon Technologies Ag | Integrated circuit device and method |
US20090308454A1 (en) * | 2008-06-12 | 2009-12-17 | General Electric Company, A New York Corporation | Insulating coating, methods of manufacture thereof and articles comprising the same |
US20100236607A1 (en) * | 2008-06-12 | 2010-09-23 | General Electric Company | Monolithically integrated solar modules and methods of manufacture |
TWI419988B (zh) * | 2009-09-18 | 2013-12-21 | 羅門哈斯電子材料有限公司 | 製造耐用物件之方法 |
CA2777666C (en) | 2009-10-13 | 2021-01-05 | National Institute Of Aerospace Associates | Energy conversion materials fabricated with boron nitride nanotubes (bnnts) and bnnt polymer composites |
KR20110049218A (ko) * | 2009-11-04 | 2011-05-12 | 삼성전자주식회사 | 태양 전지 및 그 제조 방법 |
KR20130071441A (ko) * | 2010-05-28 | 2013-06-28 | 액셀리스 테크놀러지스, 인크. | 정전 척을 위한 열 팽창 계수 정합 |
TWI471430B (zh) * | 2010-08-25 | 2015-02-01 | Hon Hai Prec Ind Co Ltd | 鋁合金表面防腐處理方法及其製品 |
JP2012087392A (ja) * | 2010-10-22 | 2012-05-10 | Shin-Etsu Chemical Co Ltd | 窒化アルミニウム膜の成膜方法 |
US8568605B2 (en) * | 2010-11-18 | 2013-10-29 | California Institute Of Technology | Forming nanometer-sized patterns by electron microscopy |
TWI477636B (zh) * | 2010-12-30 | 2015-03-21 | Hon Hai Prec Ind Co Ltd | 鋁及鋁合金表面防腐處理方法及其鋁製品 |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
TWI426153B (zh) * | 2011-01-19 | 2014-02-11 | Hon Hai Prec Ind Co Ltd | 鍍膜件及其製備方法 |
US8574728B2 (en) | 2011-03-15 | 2013-11-05 | Kennametal Inc. | Aluminum oxynitride coated article and method of making the same |
KR101867646B1 (ko) * | 2011-06-30 | 2018-06-14 | 모멘티브 파포만스 마테리아루즈 쟈판 고도가이샤 | 추적성이 표시된 제품 및 제품의 추적성을 표시하는 방법 |
CN102903613B (zh) * | 2011-07-25 | 2016-05-18 | 中国科学院微电子研究所 | 消除接触孔工艺中桥接的方法 |
KR101998440B1 (ko) | 2011-08-10 | 2019-07-09 | 엔테그리스, 아이엔씨. | 선택적 이트리아 상부층을 가지는 AlON 피복 기판 |
JP5915026B2 (ja) * | 2011-08-26 | 2016-05-11 | 住友大阪セメント株式会社 | 温度測定用板状体及びそれを備えた温度測定装置 |
WO2013074134A1 (en) | 2011-11-17 | 2013-05-23 | National Institute Of Aerospace Associates | Radiation shielding materials containing hydrogen, boron and nitrogen |
US9034199B2 (en) | 2012-02-21 | 2015-05-19 | Applied Materials, Inc. | Ceramic article with reduced surface defect density and process for producing a ceramic article |
US9212099B2 (en) | 2012-02-22 | 2015-12-15 | Applied Materials, Inc. | Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics |
CA2907508C (en) * | 2012-03-30 | 2018-05-15 | National Institute Of Aerospace Associates | Multi-functional bn-bn composite |
US20150072119A1 (en) * | 2012-04-12 | 2015-03-12 | The Regents Of The University Of Colorado, A Body Corporate | Multi-layer structure including an interlayer to reduce stress in the structure and method of forming same |
US9373517B2 (en) | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US9138864B2 (en) | 2013-01-25 | 2015-09-22 | Kennametal Inc. | Green colored refractory coatings for cutting tools |
US9017809B2 (en) | 2013-01-25 | 2015-04-28 | Kennametal Inc. | Coatings for cutting tools |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
JP6076838B2 (ja) * | 2013-05-31 | 2017-02-08 | 住友重機械イオンテクノロジー株式会社 | 絶縁構造及び絶縁方法 |
US9850568B2 (en) | 2013-06-20 | 2017-12-26 | Applied Materials, Inc. | Plasma erosion resistant rare-earth oxide based thin film coatings |
US9711334B2 (en) | 2013-07-19 | 2017-07-18 | Applied Materials, Inc. | Ion assisted deposition for rare-earth oxide based thin film coatings on process rings |
US9583369B2 (en) | 2013-07-20 | 2017-02-28 | Applied Materials, Inc. | Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles |
US9427808B2 (en) | 2013-08-30 | 2016-08-30 | Kennametal Inc. | Refractory coatings for cutting tools |
JP6273188B2 (ja) * | 2013-10-31 | 2018-01-31 | 東京エレクトロン株式会社 | プラズマ処理方法 |
US9725799B2 (en) | 2013-12-06 | 2017-08-08 | Applied Materials, Inc. | Ion beam sputtering with ion assisted deposition for coatings on chamber components |
US9804058B2 (en) | 2014-02-27 | 2017-10-31 | Pratt & Whitney Canada Corp. | Method of facilitating visual detection of a crack in a component of a gas turbine engine |
US9804309B1 (en) * | 2014-04-22 | 2017-10-31 | Kla-Tencor Corporation | Reducing extrinsic stress in thin film optical mirrors and filters for deep ultraviolet |
US9869013B2 (en) | 2014-04-25 | 2018-01-16 | Applied Materials, Inc. | Ion assisted deposition top coat of rare-earth oxide |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
CN104177128B (zh) * | 2014-08-08 | 2016-12-07 | 苏州宏久航空防热材料科技有限公司 | 一种复合陶瓷石墨电极 |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
CN107001820A (zh) * | 2014-10-21 | 2017-08-01 | 奥雷尔科技有限公司 | 用于在基底上形成图案化的金属膜的组合物 |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
TWI683888B (zh) | 2015-03-18 | 2020-02-01 | 美商恩特葛瑞斯股份有限公司 | 塗佈有經氟退火膜之物品 |
JP6510356B2 (ja) * | 2015-07-30 | 2019-05-08 | モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 | ウエハ支持装置 |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
JP6455480B2 (ja) * | 2016-04-25 | 2019-01-23 | トヨタ自動車株式会社 | 成膜装置及び成膜方法 |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
JP6322669B2 (ja) * | 2016-06-23 | 2018-05-09 | 株式会社アルバック | 応力調整方法 |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US11251019B2 (en) * | 2016-12-15 | 2022-02-15 | Toyota Jidosha Kabushiki Kaisha | Plasma device |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
TWI801385B (zh) * | 2017-05-15 | 2023-05-11 | 日商東京威力科創股份有限公司 | 用於進階圖案化應用之原位選擇性沉積及蝕刻 |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
CN107105605B (zh) * | 2017-05-26 | 2019-08-06 | 爱克奇换热技术(太仓)有限公司 | 一种散热水冷板及其制作方法 |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
DE102017213181A1 (de) * | 2017-07-31 | 2019-01-31 | Carl Zeiss Smt Gmbh | Optische Anordnung für EUV-Strahlung mit einer Abschirmung zum Schutz vor der Ätzwirkung eines Plasmas |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
KR102016615B1 (ko) * | 2017-09-14 | 2019-08-30 | (주)코미코 | 내플라즈마 특성이 향상된 플라즈마 에칭 장치용 부재 및 그 제조 방법 |
JP6863199B2 (ja) | 2017-09-25 | 2021-04-21 | トヨタ自動車株式会社 | プラズマ処理装置 |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10424487B2 (en) | 2017-10-24 | 2019-09-24 | Applied Materials, Inc. | Atomic layer etching processes |
CN108760254B (zh) * | 2017-10-25 | 2020-05-12 | 上海四旻机电科技有限公司 | 转换开关测试装置 |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
TWI766433B (zh) | 2018-02-28 | 2022-06-01 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US11639547B2 (en) * | 2018-05-03 | 2023-05-02 | Applied Materials, Inc. | Halogen resistant coatings and methods of making and using thereof |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
CN108863443B (zh) * | 2018-07-10 | 2021-05-14 | 山东国晶新材料有限公司 | 一种平面复合加热器的制备方法 |
CN112996945B (zh) * | 2018-07-10 | 2024-04-05 | 耐科思特生物识别集团股份公司 | 用于电子设备的热传导及保护涂覆件 |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
CN109370541B (zh) * | 2018-09-29 | 2021-06-01 | 江苏墨泰新材料有限公司 | 石墨-陶瓷复合导热膜及其制备方法和应用 |
KR20210055786A (ko) * | 2018-10-05 | 2021-05-17 | 램 리써치 코포레이션 | 플라즈마 프로세싱 챔버 |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
US11591689B2 (en) * | 2019-02-25 | 2023-02-28 | Applied Materials, Inc. | Method for fabricating chamber parts |
WO2021237071A1 (en) * | 2020-05-22 | 2021-11-25 | Momentive Performance Quartz, Inc. | Coating for heaters and crucibles |
CN113481476B (zh) * | 2021-06-11 | 2023-07-21 | 武汉大学 | 一种耐高温AlN/ZnO纳米复合压电涂层及其制备方法 |
WO2024064494A1 (en) * | 2022-09-19 | 2024-03-28 | Lam Research Corporation | Plasma-exposed parts comprising an etch-resistant material |
CN115558892A (zh) * | 2022-10-14 | 2023-01-03 | 上海奥莱雅康医疗科技有限公司 | 一种含铂的涂层 |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3278319A (en) * | 1962-08-06 | 1966-10-11 | Pittsburgh Plate Glass Co | Phototropic glass and method |
SU424449A1 (ru) * | 1971-01-05 | 1974-05-15 | Катод для реактивного распыления кремния | |
US4264803A (en) * | 1978-01-10 | 1981-04-28 | Union Carbide Corporation | Resistance-heated pyrolytic boron nitride coated graphite boat for metal vaporization |
US4374903A (en) * | 1980-06-09 | 1983-02-22 | Advanced Technology, Inc. | Metal coatings or metal sandwiches with boron nitride or titanium diboride substrates |
JPS5858273A (ja) * | 1981-10-01 | 1983-04-06 | Sumitomo Electric Ind Ltd | 被覆超硬合金 |
US4619865A (en) * | 1984-07-02 | 1986-10-28 | Energy Conversion Devices, Inc. | Multilayer coating and method |
JPS62123094A (ja) | 1985-11-22 | 1987-06-04 | Denki Kagaku Kogyo Kk | 3―5属化合物半導体気相成長用サセプタ |
US4788167A (en) * | 1986-11-20 | 1988-11-29 | Minnesota Mining And Manufacturing Company | Aluminum nitride/aluminum oxynitride/group IVB metal nitride abrasive particles derived from a sol-gel process |
US4980730A (en) * | 1987-05-01 | 1990-12-25 | National Institute For Research In Organic Materials | Light emitting element of cubic boron nitride |
US5527596A (en) * | 1990-09-27 | 1996-06-18 | Diamonex, Incorporated | Abrasion wear resistant coated substrate product |
US5350720A (en) * | 1991-03-18 | 1994-09-27 | Shin-Etsu Chemical Co., Ltd. | Triple-layered ceramic heater |
US5146481A (en) * | 1991-06-25 | 1992-09-08 | Diwakar Garg | Diamond membranes for X-ray lithography |
JPH05238859A (ja) | 1992-02-28 | 1993-09-17 | Tokyo Electric Power Co Inc:The | セラミックコーティング部材 |
JPH05238855A (ja) | 1992-02-28 | 1993-09-17 | Tokyo Electric Power Co Inc:The | セラミックコーティング部材の製造方法 |
JPH0661335A (ja) | 1992-08-04 | 1994-03-04 | Ulvac Japan Ltd | 半導体製造装置用の基板保持プレート |
US5332601A (en) * | 1992-12-10 | 1994-07-26 | The United States As Represented By The United States Department Of Energy | Method of fabricating silicon carbide coatings on graphite surfaces |
JP2664866B2 (ja) * | 1993-04-09 | 1997-10-22 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 窒化ホウ素をエッチングする方法 |
US6033483A (en) * | 1994-06-30 | 2000-03-07 | Applied Materials, Inc. | Electrically insulating sealing structure and its method of use in a high vacuum physical vapor deposition apparatus |
EP0704880A3 (de) * | 1994-09-28 | 1998-09-30 | Matsushita Electric Industrial Co., Ltd. | Hochdruck-Entladungslampe, Herstellungsverfahren einer Entladungsröhre für Hochdruck-Entladungslampen und Herstellungsverfahren eines Hohlröhrenkörpers |
US5691260A (en) * | 1994-12-30 | 1997-11-25 | Denki Kagaku Kogyo Kabushiki Kaisha | Cubic system boron nitride sintered body for a cutting tool |
WO1997001436A1 (en) | 1995-06-26 | 1997-01-16 | General Electric Company | Protected thermal barrier coating composite with multiple coatings |
JPH1067584A (ja) * | 1996-08-23 | 1998-03-10 | Shin Etsu Chem Co Ltd | 反応容器 |
US6132843A (en) * | 1996-11-14 | 2000-10-17 | Nippon Sheet Glass Do., Ltd. | Glass substrate for magnetic disks |
JP3362113B2 (ja) * | 1997-07-15 | 2003-01-07 | 日本碍子株式会社 | 耐蝕性部材、ウエハー設置部材および耐蝕性部材の製造方法 |
SE520802C2 (sv) * | 1997-11-06 | 2003-08-26 | Sandvik Ab | Skärverktyg belagt med aluminiumoxid och process för dess tillverkning |
JP3949268B2 (ja) * | 1998-04-20 | 2007-07-25 | 日本碍子株式会社 | 耐食性セラミックス部材 |
JPH11354260A (ja) | 1998-06-11 | 1999-12-24 | Shin Etsu Chem Co Ltd | 複層セラミックスヒータ |
US6187453B1 (en) | 1998-07-17 | 2001-02-13 | United Technologies Corporation | Article having a durable ceramic coating |
JP2000201050A (ja) * | 1998-11-02 | 2000-07-18 | Ngk Insulators Ltd | 表面弾性波装置用基板およびその製造方法 |
JP2000345319A (ja) * | 1999-05-31 | 2000-12-12 | Tokyo Electron Ltd | 透過窓の製造方法、透過窓及びこれを用いた処理装置 |
US6410172B1 (en) * | 1999-11-23 | 2002-06-25 | Advanced Ceramics Corporation | Articles coated with aluminum nitride by chemical vapor deposition |
JP2002038252A (ja) * | 2000-07-27 | 2002-02-06 | Ngk Insulators Ltd | 耐熱性構造体、耐ハロゲン系腐食性ガス材料および耐ハロゲン系腐食性ガス性構造体 |
JP4277973B2 (ja) * | 2001-07-19 | 2009-06-10 | 日本碍子株式会社 | イットリア−アルミナ複合酸化物膜の製造方法、イットリア−アルミナ複合酸化物膜および耐蝕性部材 |
US6627323B2 (en) | 2002-02-19 | 2003-09-30 | General Electric Company | Thermal barrier coating resistant to deposits and coating method therefor |
JP2003277051A (ja) * | 2002-03-22 | 2003-10-02 | Ngk Insulators Ltd | イットリア−アルミナ複合酸化物膜を有する積層体、イットリア−アルミナ複合酸化物膜、耐蝕性部材、耐蝕性膜およびイットリア−アルミナ複合酸化物膜の製造方法 |
JP2004002101A (ja) * | 2002-05-31 | 2004-01-08 | Toshiba Ceramics Co Ltd | 耐プラズマ性部材及びその製造方法 |
US7535100B2 (en) * | 2002-07-12 | 2009-05-19 | The United States Of America As Represented By The Secretary Of The Navy | Wafer bonding of thinned electronic materials and circuits to high performance substrates |
JP4136648B2 (ja) * | 2002-12-26 | 2008-08-20 | 日本碍子株式会社 | 異種材料接合体及びその製造方法 |
US20060165994A1 (en) * | 2004-07-07 | 2006-07-27 | General Electric Company | Protective coating on a substrate and method of making thereof |
-
2005
- 2005-07-06 US US11/175,236 patent/US20060165994A1/en not_active Abandoned
- 2005-07-06 CN CNA2005800287655A patent/CN101076614A/zh active Pending
- 2005-07-06 WO PCT/US2005/023786 patent/WO2006017070A2/en active Application Filing
- 2005-07-06 CN CNA2005800297746A patent/CN101048531A/zh active Pending
- 2005-07-06 WO PCT/US2005/023784 patent/WO2006005067A2/en active Application Filing
- 2005-07-06 DE DE112005001601T patent/DE112005001601T5/de not_active Withdrawn
- 2005-07-06 US US11/175,237 patent/US20060008676A1/en not_active Abandoned
- 2005-10-12 US US11/249,085 patent/US8247080B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2006017070A3 (en) | 2006-06-15 |
US8247080B2 (en) | 2012-08-21 |
CN101048531A (zh) | 2007-10-03 |
US20060008676A1 (en) | 2006-01-12 |
US20060165994A1 (en) | 2006-07-27 |
WO2006017070A2 (en) | 2006-02-16 |
US20060051602A1 (en) | 2006-03-09 |
WO2006005067A2 (en) | 2006-01-12 |
WO2006005067A3 (en) | 2006-04-06 |
CN101076614A (zh) | 2007-11-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE112005001601T5 (de) | Schützende Beschichtung auf einem Substrat und Verfahren zum Herstellen derselben | |
DE60228542D1 (de) | Verfahren und Vorrichtung zum Prüfen der Oberfläche von Substraten | |
DE502005008150D1 (de) | Verfahren zum Honen von Bohrungen sowie Honwerkzeug hierfür | |
DE502005008399D1 (de) | Schutzschicht zum Aufbringen auf ein Substrat und Verfahren zur Herstellung einer Schutzschicht | |
DE112005002827A5 (de) | Roboterhand sowie Verfahren zum automatischen Setzen eines Elements | |
DE602004000051D1 (de) | Verfahren zum Beschichten von grossflächigen Substraten | |
DE10392797D2 (de) | Verfahren zum Erhöhen der Stabilität eines Fahrzeugs | |
ATE471997T1 (de) | Vorrichtung und verfahren zum beschichten eines substrats | |
DE102007025088B8 (de) | Anzeigegerät und Verfahren zum Herstellen desselben | |
DE602005013692D1 (de) | Halbleiterbauelement und verfahren zu seiner herstellung | |
ATA4552003A (de) | Vorrichtung und verfahren zum verbinden der stirnseiten von teilen | |
DE502005005634D1 (de) | Beschichtungsanlage und Verfahren zum Betrieb einer Beschichtungsanlage | |
DE602005015934D1 (de) | Verfahren zur aktivierung der oberfläche eines metallbauelements | |
DE50214272D1 (de) | Piezoelektrisches bauelement und verfahren zu dessen herstellung | |
DE60320734D1 (de) | Verfahren zum Beschichten von mikro-elektromechanischen Vorrichtungen | |
DE602005006529D1 (de) | Vorrichtung zum transferspritzen von harz- oder pech und verfahren damit | |
DE60335076D1 (de) | Verfahren und vorrichtungen zum zusammenstellen eines flugplans | |
DE602006009027D1 (de) | Piezoelektrisches Substrat und Verfahren zu dessen Herstellung | |
DE602007012492D1 (de) | Funkuhr und Verfahren zum Ändern der Wellenformabgrenzungsregel | |
DE602005013541D1 (de) | Verfahren und gerät zum trimmen von faserigen substraten | |
DE602004006653D1 (de) | Dehnbares lederartiges bahnenförmiges Substrat und Verfahren zu seiner Herstellung | |
DE60330487D1 (de) | Vorrichtung und verfahren zum beschichten des auss | |
DE50210808D1 (de) | Verfahren und Vorrichtung zum Auftragen von Fluiden auf Substraten | |
DE602005017905D1 (de) | Verfahren zur verbesserung der bioverfügbarkeit eines reninhemmers | |
DE60221824D1 (de) | System mit einer schaltung und verfahren zum umschalten der verstärkung eines vorverstärkers |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R005 | Application deemed withdrawn due to failure to request examination |
Effective date: 20120707 |