JP2012087392A - 窒化アルミニウム膜の成膜方法 - Google Patents
窒化アルミニウム膜の成膜方法 Download PDFInfo
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 225
- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000007789 gas Substances 0.000 claims abstract description 271
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 69
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims abstract description 50
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 35
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 42
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 38
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 30
- 229910052799 carbon Inorganic materials 0.000 claims description 29
- 229910052782 aluminium Inorganic materials 0.000 claims description 27
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 claims description 24
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 19
- 229910002804 graphite Inorganic materials 0.000 claims description 13
- 239000010439 graphite Substances 0.000 claims description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 4
- 230000035939 shock Effects 0.000 abstract description 13
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 5
- 238000002156 mixing Methods 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 3
- 238000002441 X-ray diffraction Methods 0.000 description 23
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 20
- 229910001882 dioxygen Inorganic materials 0.000 description 20
- 239000000758 substrate Substances 0.000 description 14
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000000470 constituent Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000002585 base Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 229910002089 NOx Inorganic materials 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910016909 AlxOy Inorganic materials 0.000 description 1
- 229910018514 Al—O—N Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- -1 oxygen nitride Chemical class 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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Abstract
【解決手段】 アルミニウム原子(Al)を含むガスおよび窒素原子(N)を含むガスに、酸素原子(O)を含むガスを混合し、窒化アルミニウム膜によって被覆されるべき被処理物に向けて供給する。
【選択図】 図1
Description
図1ないし図3に示される二重管構造のガス供給管を備え、φ500mm×1500mmの縦型に構成された窒化アルミニウムの成膜装置を用いて、載置台に載置された50mm×50mm×1mmの窒化アルミニウム基材の表面に、以下のようにして、窒化アルミニウム膜を成膜した。
実施例1で用いたのと同じ窒化アルミニウムの成膜装置を用いて、アンモニアガスと酸素ガスを混合した混合ガスに代えて、酸素ガスを窒化アルミニウムの成膜装置の内筒内に供給せず、アンモニアガスのみをガス供給管の外管から、窒化アルミニウムの成膜装置の内筒内に供給した点を除き、実施例1と同様にして、50mm×50mm×1mmの窒化アルミニウム基材の表面に、100μmの膜厚を有する窒化アルミニウム膜を成膜した。
図4および図5示される外管6a、中央管6cおよび内管6bを備えた三重管構造のガス供給管を備え、図1に示されるように、φ500mm×1500mmの縦型に構成された窒化アルミニウムの成膜装置を用いて、載置台に載置された50mm×50mm×1mmの窒化アルミニウム基材の表面に、以下のようにして、窒化アルミニウム膜を成膜した。
窒化アルミニウムの成膜装置の内筒内に供給されるトリメチルアルミニウム(TMA)ガスに含まれるアルミニウム原子(Al)と、窒化アルミニウムの成膜装置の内筒内に供給される酸素ガスに含まれる酸素原子(O)のモル比(Al/O)を10に設定した点を除き、実施例2と同様にして、50mm×50mm×1mmの窒化アルミニウム基材の表面に、100μmの膜厚を有する窒化アルミニウム膜を成膜した。
窒化アルミニウムの成膜装置の内筒内に供給されるトリメチルアルミニウム(TMA)ガスに含まれるアルミニウム原子(Al)と、窒化アルミニウムの成膜装置の内筒内に供給される酸素ガスに含まれる酸素原子(O)のモル比(Al/O)を100に設定した点を除き、実施例2と同様にして、50mm×50mm×1mmの窒化アルミニウム基材の表面に、100μmの膜厚を有する窒化アルミニウム膜を成膜した。
窒化アルミニウムの成膜装置の内筒内に供給されるトリメチルアルミニウム(TMA)ガスに含まれるアルミニウム原子(Al)と、窒化アルミニウムの成膜装置の内筒内に供給される酸素ガスに含まれる酸素原子(O)のモル比(Al/O)を0.1に設定した点を除き、実施例2と同様にして、50mm×50mm×1mmの窒化アルミニウム基材の表面に、100μmの膜厚を有する窒化アルミニウム膜を成膜した。
窒化アルミニウムの成膜装置の内筒内に供給されるトリメチルアルミニウム(TMA)ガスに含まれるアルミニウム原子(Al)と、窒化アルミニウムの成膜装置の内筒内に供給される酸素ガスに含まれる酸素原子(O)のモル比(Al/O)を150に設定した点を除き、実施例2と同様にして、50mm×50mm×1mmの窒化アルミニウム基材の表面に、100μmの膜厚を有する窒化アルミニウム膜を成膜した。
酸素ガスに代えて、二酸化窒素(NO2)ガスを用いた点を除き、実施例1と同様にして、50mm×50mm×1mmの窒化アルミニウム基材の表面に、100μmの膜厚を有する窒化アルミニウム膜を成膜した。ここに、二酸化窒素ガスの流量は、その酸素原子量が、実施例1の酸素ガスに含まれる酸素原子量と同一になるように設定した。
酸素ガスに代えて、二酸化炭素(CO2)ガスを用いた点を除き、実施例1と同様にして、50mm×50mm×1mmの窒化アルミニウム基材の表面に、100μmの膜厚を有する窒化アルミニウム膜を成膜した。ここに、二酸化炭素ガスの流量は、その酸素原子量が、実施例1の酸素ガスに含まれる酸素原子量と同一になるように設定した。
酸素ガスに代えて、水蒸気(H2O)を用いた点を除き、実施例1と同様にして、50mm×50mm×1mmの窒化アルミニウム基材の表面に、100μmの膜厚を有する窒化アルミニウム膜を成膜した。ここに、水蒸気の流量は、その酸素原子量が、実施例1の酸素ガスに含まれる酸素原子量と同一になるように設定した。
トリメチルアルミニウムガスに代えて、塩化アルミニウムガスを用いた点を除き、実施例1と同様にして、50mm×50mm×1mmの窒化アルミニウム基材の表面に、100μmの膜厚を有する窒化アルミニウム膜を成膜した。ここに、塩化アルミニウムガスの流量は、そのアルミニウム原子量が、実施例1のトリメチルアルミニウムガスに含まれるアルミニウム原子量と同一になるように設定した。
2 内筒
3 ヒーター
4 載置台
5 回転機構
6 ガス供給管
6a ガス供給管の外管
6b ガス供給管の内管
6c ガス供給管の中央管
11 円筒
12 ヒーター
13 載置台
14 ガス供給管
Claims (9)
- アルミニウム原子(Al)を含むガスと、窒素原子(N)を含むガスと、酸素原子(O)を含むガスとを、窒化アルミニウム膜の成膜装置に供給することを特徴とする窒化アルミニウム膜の成膜方法。
- 前記アルミニウム原子(Al)を含むガスと、前記窒素原子(N)を含むガスとを、異なる流路を介して、窒化アルミニウム膜の成膜装置に供給することを特徴とする請求項1に記載の窒化アルミニウム膜の成膜方法。
- 前記酸素原子を含むガスを、前記窒化アルミニウム膜の成膜装置に供給するのに先立って、前記窒素原子(N)を含むガスまたは前記アルミニウム原子(Al)を含むガスと混合することを特徴とする請求項1または2に記載の窒化アルミニウム膜の成膜方法。
- 前記アルミニウム原子(Al)を含むガスおよび前記酸素原子(O)を含むガスを、アルミニウム原子(Al)と酸素原子(O)とのモル比(Al/O)が1≦Al/O≦100となるように、窒化アルミニウム膜の成膜装置に供給することを特徴とする請求項1ないし3のいずれか1項に記載の窒化アルミニウム膜の成膜方法。
- 前記アルミニウム原子(Al)を含むガスおよび前記酸素原子(O)を含むガスを、アルミニウム原子(Al)と酸素原子(O)とのモル比(Al/O)が5≦Al/O≦30となるように、窒化アルミニウム膜の成膜装置に供給することを特徴とする請求項4に記載の窒化アルミニウム膜の成膜方法。
- 二重構造または三重構造をなした供給管によって、前記アルミニウム原子(Al)を含むガスと、前記窒素原子(N)を含むガスと、前記酸素原子(O)を含むガスを前記窒化アルミニウム膜の成膜装置内に供給することを特徴とする請求項1ないし5のいずれか1項に記載の窒化アルミニウム膜の成膜方法。
- 前記酸素原子(O)を含むガスとして、O2ガス、H2Oガス、NOxガス、COxガスよりなる群から選ばれるガスを用いることを特徴とする請求項1ないし6のいずれか1項に記載の窒化アルミニウム膜の成膜方法。
- 前記アルミニウム原子(Al)を含むガスとして、トリメチルアルミニウムガスおよび塩化アルミニウムよりなる群から選ばれるガスを用いることを特徴とする請求項1ないし7のいずれか1項に記載の窒化アルミニウム膜の成膜方法。
- 前記窒化アルミニウム膜の成膜装置内の前記アルミニウム原子(Al)を含むガスと、前記窒素原子(N)を含むガスと、前記酸素原子(O)を含むガスと接触する部材がカーボンによって作られ、前記酸素原子(O)を含むガスを前記窒化アルミニウム膜の成膜装置内に供給するのに先立って、熱分解窒化硼素(pBN)、熱分解黒鉛(PG)、硼素含有熱分解黒鉛(B−PG)、窒化アルミニウム(AlN)および炭化ケイ素(SiC)よりなる群から選ばれる化合物を含むガスで、酸素原子を含まないガスを前記窒化アルミニウム膜の成膜装置内に供給して、前記カーボンによって作られた部材の表面を前記酸素原子を含まないガスに含まれる前記化合物によって被覆することを特徴とする請求項1ないし8のいずれか1項に記載の窒化アルミニウム膜の成膜方法。
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JP2010237138A JP2012087392A (ja) | 2010-10-22 | 2010-10-22 | 窒化アルミニウム膜の成膜方法 |
US13/189,006 US8440566B2 (en) | 2010-10-22 | 2011-07-22 | Method for forming an aluminum nitride thin film |
KR1020110079666A KR20120042628A (ko) | 2010-10-22 | 2011-08-10 | 질화 알루미늄 막의 제조 방법 |
TW100138082A TW201233841A (en) | 2010-10-22 | 2011-10-20 | Method for forming aluminum nitride thin film |
CN2011103259372A CN102453884A (zh) | 2010-10-22 | 2011-10-24 | 氮化铝膜的形成方法 |
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US20160014878A1 (en) | 2014-04-25 | 2016-01-14 | Rogers Corporation | Thermal management circuit materials, method of manufacture thereof, and articles formed therefrom |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06293593A (ja) * | 1993-04-07 | 1994-10-21 | Alps Electric Co Ltd | プラズマCVDによる合成方法およびこの方法により合成されたエピタキシャルAlN |
JP2006052123A (ja) * | 2004-07-12 | 2006-02-23 | Sumitomo Electric Ind Ltd | n型AlN結晶、n型AlGaN固溶体及びそれらの製造方法 |
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JP3024712B2 (ja) | 1991-04-03 | 2000-03-21 | アルプス電気株式会社 | Al−O−N系コンポジット材料ならびにその合成方法 |
US7105889B2 (en) * | 2004-06-04 | 2006-09-12 | International Business Machines Corporation | Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics |
CN101048531A (zh) * | 2004-07-07 | 2007-10-03 | 通用电气公司 | 基材上的保护涂层及其制备方法 |
JP2007016272A (ja) | 2005-07-06 | 2007-01-25 | Ge Speciality Materials Japan Kk | 基板上に被覆形成される保護膜及びその製造方法 |
KR20110108342A (ko) * | 2008-12-02 | 2011-10-05 | 유니버시티 오브 센트럴 플로리다 | 에너지 변환 장치 |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06293593A (ja) * | 1993-04-07 | 1994-10-21 | Alps Electric Co Ltd | プラズマCVDによる合成方法およびこの方法により合成されたエピタキシャルAlN |
JP2006052123A (ja) * | 2004-07-12 | 2006-02-23 | Sumitomo Electric Ind Ltd | n型AlN結晶、n型AlGaN固溶体及びそれらの製造方法 |
Cited By (2)
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KR20150114468A (ko) * | 2013-02-08 | 2015-10-12 | 가부시끼가이샤 도꾸야마 | 질화알루미늄 분말 |
KR102185730B1 (ko) | 2013-02-08 | 2020-12-02 | 가부시끼가이샤 도꾸야마 | 질화알루미늄 분말 |
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TW201233841A (en) | 2012-08-16 |
CN102453884A (zh) | 2012-05-16 |
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