CN112996945B - 用于电子设备的热传导及保护涂覆件 - Google Patents
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- CN112996945B CN112996945B CN201980046272.6A CN201980046272A CN112996945B CN 112996945 B CN112996945 B CN 112996945B CN 201980046272 A CN201980046272 A CN 201980046272A CN 112996945 B CN112996945 B CN 112996945B
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- 239000011253 protective coating Substances 0.000 title claims abstract description 106
- 239000010410 layer Substances 0.000 claims abstract description 168
- 238000000576 coating method Methods 0.000 claims abstract description 117
- 239000011248 coating agent Substances 0.000 claims abstract description 109
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 239000010409 thin film Substances 0.000 claims abstract description 46
- 239000013078 crystal Substances 0.000 claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 35
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 33
- 229910052582 BN Inorganic materials 0.000 claims description 29
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 26
- 238000000869 ion-assisted deposition Methods 0.000 claims description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 12
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 9
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 238000005240 physical vapour deposition Methods 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 239000011247 coating layer Substances 0.000 claims description 7
- 229920002313 fluoropolymer Polymers 0.000 claims description 5
- 239000004811 fluoropolymer Substances 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 abstract description 15
- 239000010408 film Substances 0.000 description 54
- 238000010849 ion bombardment Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 11
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 7
- 230000007613 environmental effect Effects 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 6
- 239000004033 plastic Substances 0.000 description 6
- 229920003023 plastic Polymers 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- -1 chromium nitride, tungsten nitride Chemical class 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000005546 reactive sputtering Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 3
- DJPURDPSZFLWGC-UHFFFAOYSA-N alumanylidyneborane Chemical compound [Al]#B DJPURDPSZFLWGC-UHFFFAOYSA-N 0.000 description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000009501 film coating Methods 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- 239000010954 inorganic particle Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005411 Van der Waals force Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 150000002843 nonmetals Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000002294 plasma sputter deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000007779 soft material Substances 0.000 description 2
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920005596 polymer binder Polymers 0.000 description 1
- 239000002491 polymer binding agent Substances 0.000 description 1
- 229910001848 post-transition metal Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1329—Protecting the fingerprint sensor against damage caused by the finger
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/02—Physical, chemical or physicochemical properties
- B32B7/022—Mechanical properties
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0647—Boron nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/342—Boron nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/046—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material with at least one amorphous inorganic material layer, e.g. DLC, a-C:H, a-C:Me, the layer being doped or not
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/048—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material with layers graded in composition or physical properties
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/40—Coatings including alternating layers following a pattern, a periodic or defined repetition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/40—Coatings including alternating layers following a pattern, a periodic or defined repetition
- C23C28/42—Coatings including alternating layers following a pattern, a periodic or defined repetition characterized by the composition of the alternating layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/40—Coatings including alternating layers following a pattern, a periodic or defined repetition
- C23C28/44—Coatings including alternating layers following a pattern, a periodic or defined repetition characterized by a measurable physical property of the alternating layer or system, e.g. thickness, density, hardness
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2250/00—Layers arrangement
- B32B2250/40—Symmetrical or sandwich layers, e.g. ABA, ABCBA, ABCCBA
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2250/00—Layers arrangement
- B32B2250/42—Alternating layers, e.g. ABAB(C), AABBAABB(C)
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/20—Inorganic coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/24—Organic non-macromolecular coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/26—Polymeric coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/28—Multiple coating on one surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
- B32B2307/204—Di-electric
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/30—Properties of the layers or laminate having particular thermal properties
- B32B2307/302—Conductive
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
- B32B2307/554—Wear resistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
- B32B2307/558—Impact strength, toughness
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
- B32B2307/584—Scratch resistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/702—Amorphous
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/704—Crystalline
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2313/00—Elements other than metals
- B32B2313/04—Carbon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2315/00—Other materials containing non-metallic inorganic compounds not provided for in groups B32B2311/00 - B32B2313/04
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2327/00—Polyvinylhalogenides
- B32B2327/12—Polyvinylhalogenides containing fluorine
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/14—Semiconductor wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3192—Multilayer coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/9088—Wear-resistant layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/24983—Hardness
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/3154—Of fluorinated addition polymer from unsaturated monomers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Multimedia (AREA)
- Human Computer Interaction (AREA)
- Theoretical Computer Science (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laminated Bodies (AREA)
- Physical Vapour Deposition (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Paints Or Removers (AREA)
Abstract
提供了保护涂覆层、包括该保护涂覆层的电子设备及其制造方法。该电子设备包括基板、设置在基板上的薄膜电路层以及设置在薄膜电路层上的保护涂覆层。该保护涂覆层包括第一涂覆件和设置在第一涂覆件上方的第二涂覆件。每个涂覆件在正交于相应涂覆表面的方向上的横截面热传导率等于或高于0.5W/(m*K)。第一涂覆件和第二涂覆件具有不同的晶体结构、或不同的晶体取向、或不同的成分、或其组合,以提供不同的纳米压痕硬度。第一涂覆件的硬度低于第二涂覆件的硬度。
Description
优先权要求及交叉引用
本申请要求于2018年7月10日提交的美国临时申请No.62/695969的权益,该申请通过参引其全部内容明确并入本文中。
技术领域
本公开总体上涉及用于电子设备的涂覆件。更具体地,所公开的主题涉及用于电子设备的保护涂覆层,该电子设备比如指纹传感器和需要机械和环境保护以及有效热消散的其他薄膜电子设备。
背景技术
基于“主动热感测”原理的指纹传感器包括像素阵列。每个像素都包括微型热发生器和基于薄膜设备的温度传感器。指纹图像是基于传感器表面区域的与指纹的“谷”和“脊”区域相对应的微小温差来映射的。在通过微型热发生器对传感器像素进行加热时,与指纹的“谷”区域相对应的局部传感器表面区域变得比与指纹的“脊”区域相对应的局部传感器表面区域更热。这是因为在“谷”区域中的热消散只能通过热辐射来发生,这要比在可以发生热传导和热辐射的“脊”区域中的热消散效率低得多。
发明内容
本公开提供了保护涂覆层、包括该保护涂覆层的电子设备及其制造方法。
在一方面,本公开提供了一种电子设备。根据一些实施方式,该电子设备包括基板、设置在基板上方的薄膜电路层以及设置在薄膜电路层上的保护涂覆层。该保护涂覆层包括第一涂覆件和设置在该第一涂覆件上方的第二涂覆件。第一涂覆件和第二涂覆件中的每一者在正交于相应涂覆表面的方向上的横截面热传导率等于或高于0.5W/(m*K)。第一涂覆件和第二涂覆件具有不同的晶体结构、或不同的晶体取向、或不同的成分、或其组合,以提供使用纳米压痕测量的不同硬度。第一涂覆件的硬度低于第二涂覆件的硬度。
基板可以是柔性的或刚性的。在一些实施方式中,基板包含聚合物或塑料,比如聚酰亚胺和聚酯。电子设备是柔性的。在一些实施方式中,基板包括玻璃或硅晶片,并且电子设备是刚性的。
在一些实施方式中,电子设备是用于使用手指进行触摸的设备。例如,薄膜电路层可以包括指纹传感器、薄膜晶体管和其他电子部件。
在一些实施方式中,第一涂覆件和第二涂覆件中的每一者均由热传导材料制成。合适材料的示例包括但不限于氮化硅、氮氧化硅、氮化硼、氮氧化硼、氮化铝、氮氧化铝、氮化铝硼、氮化硅硼、氮化硅铝、SiAlON、氮化钛铝、氮化铬、氮化钨及其组合。
第一涂覆件可以称为软材料,而第二涂覆件可以称为硬材料。在一些实施方式中,第一涂覆件的硬度在介于0.2GPa至1GPa的范围内,并且第二涂覆件的硬度在介于1.1GPa至10GPa的范围内。第一涂覆件和第二涂覆件的这种组合可以适用于柔性电子设备和刚性电子设备两者,其中,基板可以分别由诸如塑料的柔性材料和诸如玻璃或硅晶片的刚性材料制成。
在一些实施方式中,第一涂覆件的硬度在介于0.5GPa至10GPa的范围内,并且第二涂覆件的硬度在介于10.1GPa至20GPa的范围内。第一涂覆件和第二涂覆件的这种组合可以适用于具有刚性基板的刚性电子设备。
在一些实施方式中,保护涂覆层具有包括第一涂覆件和第二涂覆件的两层结构。
在一些实施方式中,保护涂覆层具有三层夹置结构,该三层夹置结构包括设置在第一涂覆件下方和薄膜电路层上方的附加的第二涂覆件。第一涂覆件设置在两层第二涂覆件之间。
在一些实施方式中,保护涂覆层包括第一涂覆件和第二涂覆件交替的多个交替层。例如,保护涂覆层可以包括第一涂覆件、第二涂覆件、第一涂覆件以及然后包括第二涂覆件。在一些实施方式中,保护涂覆层可以包括四个、五个、六个或任何其他合适的涂覆层。
第一涂覆件和第二涂覆件可以包括软材料与硬材料的不同组合。例如,在一些实施方式中,第一涂覆件由六方氮化硼(h-BN)制成,并且第二涂覆件由比h-BN硬的立方氮化硼(c-BN)制成。
在一些实施方式中,第一涂覆件和第二涂覆件由六方氮化硼(h-BN)制成。第一涂覆件中的氮化硼的六边形平面定向成大致平行于保护涂覆层。第二涂覆件中的氮化硼的六边形平面定向成大致正交于保护涂覆层,从而在该大致正交于保护涂覆层的六边形平面的方向上提供更高的硬度和更高的热传导率。
在一些实施方式中,第一涂覆件和第二涂覆件由类金刚石碳(DLC)制成,并且第二涂覆件的sp3 DLC结构与sp2 DLC结构的比率高于第一涂覆件的sp3 DLC结构与sp2 DLC结构的比率。更高含量的sp3 DLC结构提供更高的硬度。
在一些实施方式中,第一涂覆件包括非晶态的氮化铝或者具有随机定向的纤锌矿晶体结构的氮化铝。第二涂覆件包括具有纤锌矿晶体结构的氮化铝,该纤锌矿晶体结构的001或002晶面方向(或c轴)定向成大致正交于保护涂覆层。
在一些实施方式中,具有氮化铝的第一涂覆件和第二涂覆件中的至少一者还包括氮化钛。Ti/(A1+Ti)的摩尔比在介于0.01至0.6的范围内,例如Ti/(A1+Ti)的摩尔比在介于0.05至0.4的范围内。
在一些实施方式中,保护涂覆层的总厚度等于或小于5微米,例如保护涂覆层的总厚度在介于0.2微米至3微米的范围内。每个单独涂覆层的厚度可以小于4微米、3微米或2微米,但是大于0.01微米。在第一涂覆件与第二涂覆件之间不使用诸如粘合剂的界面层。
保护涂覆层可以具有疏油和/或疏水的顶部表面。在一些实施方式中,保护涂覆层还包括在保护涂覆层的顶部表面上沉积或引入(graft)的含氟聚合物或含氟化合物,从而产生有效防污的硬涂覆件。在保护涂覆件上未涂覆有其他材料,该保护涂覆件用于与使用者的手指直接接触。
在一些实施方式中,本公开提供了一种电子设备,该电子设备包括基板、设置在基板上方的薄膜电路层以及设置在薄膜电路层上方的保护涂覆层。保护涂覆层具有夹置结构,该夹置结构包括第一涂覆件和两层第二涂覆件:一层第二涂覆件设置在第一涂覆件下方,并且另一层第二涂覆件设置在第一涂覆件上方。第一涂覆件和第二涂覆件中的每一者在正交于相应涂覆表面的方向上的横截面热传导率等于或高于0.5W/(m*K),例如等于或高于1W/(m*K)、4W/(m*K)或5W/(m*K)。第一涂覆件和第二涂覆件具有不同的晶体结构、或不同的晶体取向、或不同的成分、或其组合,以提供使用纳米压痕测量的不同硬度。第一涂覆件的硬度低于第二涂覆件的硬度。第一涂覆件和第二涂覆件可以由如上所述的材料制成。
在另一方面,本公开提供了如上所述的保护涂覆层。
在另一方面,本公开提供了形成保护涂覆层以及制造上述电子设备的方法。在一些实施方式中,这种方法包括以下步骤:提供待加工的电子设备,该电子设备包括基板和设置在基板上方的薄膜电路层;以及将保护涂覆层形成在薄膜电路层上方。
形成保护涂覆层的步骤包括:形成第一涂覆件的至少一个步骤;以及形成第二涂覆件的至少一个步骤。涂覆程序取决于保护涂覆层的结构。第一涂覆件和第二涂覆件中的每一者可以使用适当的涂覆处理来形成。适当的涂覆处理的示例包括但不限于化学气相沉积(CVD)、物理气相沉积(PVD)、离子辅助沉积(IAD)、溅射及其组合。例如,CVD工艺可以包括等离子体增强化学气相沉积(PECVD)。PECVD或溅射工艺可以包括离子轰击。PVD技术可以包括IAD或与IAD组合。IAD工艺可以包括离子辅助电子束蒸发。溅射工艺可以包括反应溅射。
附图说明
当结合附图阅读时,根据以下具体描述可以最佳地理解本公开。需要强调的是,根据惯例,附图的各种特征不一定按比例绘制。相反,为了清楚起见,各种特征的尺寸被任意扩大或缩小。在整个说明书和附图中,相似的附图标记表示相似的特征。
图1是示出根据一些实施方式的包括示例性保护涂覆层的示例性设备的截面图,该保护涂覆层包括第一涂覆件和第二涂覆件。
图2示出了六方氮化硼(h-BN)和立方氮化硼(c-BN)的晶体结构。
图3是示出根据一些实施方式的包括示例性涂覆系统的示例性设备的截面图,该示例性涂覆系统具有三层的构型。
图4是示出根据一些实施方式的包括示例性涂覆系统的示例性设备的截面图,该示例性涂覆系统具有厚膜。
图5A是示出根据一些实施方式的制造示例性设备的示例性方法的流程图。
图5B是示出根据一些实施方式的制造示例性保护涂覆层的示例性方法的流程图。
图5C是示出根据一些实施方式的形成图3的示例性设备中的保护涂覆层的示例性方法的流程图。
具体实施方式
本示例性实施方式的说明书旨在结合附图来阅读,这些附图将被认为是整个书面描述的一部分。在说明书中,诸如“下”、“上”、“水平”、“竖向”、“在……上”、“在……下”、“向上”、“向下”、“顶部”和“底部”等相关术语及其派生词(例如“水平地”、“向下地”、“向上地”等)应被解释为是指正在讨论的附图中所描述的或如所示出的取向。这些相关术语是为了便于描述,并且不要求设备以特定取向构造或以特定取向操作。与诸如“连接”和“互连”之类的附接、联接等有关的术语是指结构通过中间结构直接或间接地固定或附接至另一结构的关系,以及指可移动的或刚性的附接结构或关系,除非另有明确说明。
为了在下文中进行描述的目的,应当理解,以下描述的实施方式可以设想具有替代性的变型和实施方式。还应当理解,本文中所描述的具体物品、成分和/或方法是示例性的,并且不应当被视为限制性的。
在本公开中,单数形式“一”、“一种”和“该”包括复数引用,并且对特定数值的引用包括至少该特定值,除非上下文中另有明确指示。当通过使用先行词“大约”将值表示为近似值时,将理解的是,该特定值形成另一实施方式。如本文中所使用的,“大约X”(其中X是数值)优选指该值的±10%(包含该值)。例如,短语“大约8”优选指的是范围为7.2至8.8的值,该范围包含7.2和8.8。存在的所有范围都是包含性的和可组合的。例如,当叙述“1至5”的范围时,所述范围应当被解释为包括范围“1至4”、“1至3”、“1至2”、“1至2和4至5”、“1至3和5”、“2至5”等。此外,当明确提供替代物的列表时,该列表可以被解释为指示任何替代物都可以被排除在外,例如在权利要求中的否定限制。例如,当叙述范围“1至5”时,所述范围可以被解释为包括1、2、3、4或5中的任何一者被否定排除的情况;因此,对“1至5”的叙述可以被解释为“1和3至5,但没有2”,或者简单地“其中,不包括2”。旨在于,无论部件、元件、特征或步骤被列为替代物或者部件、元件、特征或步骤是独立叙述的,本文中所明确引用的任何部件、元件、特征或步骤都可以被明确地排除在权利要求中。
诸如“包括”、“包括有”、“包含”、“包含有”等开放术语的意思是“包括有”。这些开放式过渡短语用于引入不排除附加的、未叙述的元件或方法步骤的元件、方法步骤等的开放式列表。应当理解的是,无论在何处使用语言“包括有”来描述实施方式,都还提供了以“由…组成”和/或“基本上由…组成”来描述的类似实施方式。
过渡短语“由…组成”及其变型不包括未叙述的任何元件、步骤或成分,通常与之相关的杂质除外。
过渡短语“基本上由…组成(consists essentially of)”或诸如“基本上由…组成(consist essentially of)”或“基本上由…组成(consisting essentially of)”的变型不包括未叙述的任何元件、步骤或成分,除非这些元件、步骤或成分不会实质性地改变指定方法、结构或成分的基本特性或新颖特性。
本文中使用的术语“大致”、“大致上”及其变型用于表示所描述的特征等于或近似等于该值或所描述值。此外,“大致相似”意在表示两个值相等或近似相等。在一些实施方式中,“大致相似”可以表示彼此相差约10%内的值,比如彼此相差约5%内的值或彼此相差约2%内的值。
金刚石、呈立方或六方形式的氮化硼、碳化硅、氮化铝等的块状材料具有例如范围在介于约250W/(m*K)至约2200W/(m*K)的高热传导率(K)以及介于10GPa至100GPa的高硬度。然而,由于加工温度和其他基板的限制,薄膜中的缺陷水平增加和结晶度缺乏,因此这些材料在薄膜形式下的期望热性能和机械性能可能急剧恶化。在这些材料中,以薄膜形式大规模应用的一个示例是类金刚石碳(diamond like carbon)(DLC)膜。例如,DLC膜可以具有范围在介于约18GPa至约23GPa的硬度,这足以在不同应用中用作保护性的硬涂覆件。
然而,很难在保持这些材料的高硬度和其他机械性能、比如高断裂韧性和用于有效地将热消散的良好热传导率的同时实现些材料的薄膜形式,尤其是那些可以在低温下(例如150℃以下)进行加工的材料更是如此。
当在膜生长期间引入离子轰击时,无论是通过等离子体增强的化学气相沉积(PECVD)还是溅射工艺,都有助于生长致密且坚硬的膜。然而,离子轰击过程还在膜内部建立了压缩应力,使得膜在特定的膜厚度、例如在2μm至5μm以下的膜厚度处开始破裂并从基质剥离。此外,热传导率较低的膜还意味着穿过膜厚度的热传递随着膜厚度的增加而急剧下降。
同时,为了对诸如指纹传感器的薄膜电子设备提供可靠的机械和环境保护,可能需要更高的膜厚度来提供保护以免于刮擦和撞击,以及免于暴露于高湿度和高温度。对于柔性电子设备和传感器,还需要足够的弯曲抵抗性。
为了使指纹的“谷”区域与“脊”区域之间的图像对比度最大化,需要优先从与指纹的“脊”和“谷”区域相对应的传感器表面区域移除热。同时,需要对指纹传感器进行机械和环境保护。期望在“有源热感测”像素阵列的上方具有顶部保护涂覆件,该顶部保护涂覆件可以具有单层或多层结构。这种顶部保护涂覆件可能需要具备以下特性:
1.高热传导率,与平行于传感器表面的方向相比,优选在正交于传感器表面的方向上具有更高的热传导率;
2.电绝缘性,但是能够使电荷积聚消散;
3.高度机械可靠性,从而提供有效的传感器保护以免于刮擦、撞击和弯曲。
4.致密、光滑以及化学、物理和热稳定,从而在传感器工作温度范围内、例如在介于约-20℃至约+70℃的工作温度范围内提供有效的传感器保护,以免于化学品和高湿度的影响;
5.优选地具有疏水/疏油表面,该疏水/疏油表面留下较少的指纹残留物;以及
6.易于制造且生产效率和产量高,优选地可以在低温下制造以实现低成本的掩膜。
本公开的目的中的一个目的是提供新的保护涂覆层或涂覆系统,该保护涂覆层或涂覆系统可以提供上面所描述的理想特性,以增强“有源热感测”指纹传感器的性能和可靠性,以及提供一种除了需要有效热消散外还需要机械保护和环境保护的其他薄膜电子设备。
本公开提供了保护涂覆层、包括该保护涂覆层的电子设备及其制造方法。本公开提供了具有高热传导率的保护涂覆层、相关的涂覆材料及其制造方法。本公开还提供了具有不同构型的多层涂覆层,该多层涂覆层使得能够对诸如指纹传感器的刚性和/或柔性电子设备进行可靠的机械和环境保护,并且同时提供了从顶部表面的有效热消散。该保护涂覆层的实施方式满足要求并且具有上述优点。
除非另有明确说明,否则下文提及的“触摸屏”、“触摸敏感设备”和“触摸面板”将被理解为包括电子设备,使用者可以通过简单触摸手势或多点触摸手势用特殊的触控笔或由一个或更多个手指触摸屏幕来对信息处理系统进行输入或控制。这些术语也被称为使用手指触摸的电子设备。
除非另有明确指示,否则下文提及的“薄膜电路层”将被理解为包含包括有薄膜电路元件的层,薄膜电路元件比如为集成电路,该集成电路包括但不限于晶体管和其他电子部件。
除非另有明确说明,否则本文中提及的“硬度”将被理解为与“纳米压痕硬度”相同。该硬度是遵循ASTM E2546、使用纳米压痕来测试的。在测试期间,纳米压痕仪将涂覆样品的表面压进不超过涂覆样品厚度的50%的深度。在一些实施方案中,用于纳米压痕的负载为100mg。
在图1和图3至图4中,相似的物品用相似的附图标记来表示,并且为了简洁起见,不再对上面参考前述附图已经提供描述的结构重复进行描述。图5A至图5C中描述的方法是参照图1至图4中所描述的示例性结构进行描述的。
参照图1,示例性电子设备100包括基板10、设置在基板10上的薄膜电路层20以及设置在薄膜电路层20上的保护涂覆层30。
基板10可以是柔性或刚性的、或其组合。在一些实施方式中,基板10包含聚合物或塑料、比如聚酰亚胺和聚酯。电子设备100是柔性的。在一些实施方式中,基板10包括玻璃、硅晶片或多晶硅,并且电子设备100是刚性的。由玻璃或硅制成的基板10可以具有15GPa至20GPa的硬度。在一些实施方式中,基板10包括诸如聚合物或塑料的柔性材料与诸如玻璃、硅晶片或多晶硅的刚性材料的组合。基板10可以具有合适的厚度、例如介于10微米至5毫米的厚度。在一些实施方式中,基板10是厚度等于或大于100微米的玻璃基板。
薄膜电路层20可以包括比如薄膜晶体管(TFT)的薄膜电路元件24和其他电子部件,薄膜电路元件24和其他电子部件可以设置在电介质矩阵22中。电子设备100可以是使用手指触摸的设备。例如,薄膜电路层20可以包括位于薄膜电路元件24中的指纹传感器。
保护涂覆层30包括第一涂覆件32和设置在第一涂覆件32上方的第二涂覆件34。第一涂覆件32和第二涂覆件34中的每一者均具有等于或高于0.5W/(m*K)的横截面热传导率。
除非另有明确说明,否则本文中形成的第一涂覆件32、第二涂覆件34或保护涂覆层30的横截面热传导率是指正交于相应的涂覆表面(例如图1中的沿着“x”方向的平面)的方向(例如图1中的“y”方向)上的热传导率。在一些实施方式中,第一涂覆件32、第二涂覆件34和保护涂覆层30中的每一者全部具有等于或高于5W/(m*K)、10W/(m*K)或20W/(m*K)的横截面热传导率。每个涂覆件和保护涂覆层30的总体热传导率可以高达250W/(m*K)、500W/(m*K)、1,000W/(m*K)或2,000W/(m*K)。热传导率可以通过使用差分3ω技术(differential3ωtechnique)来测量。这种技术在本领域中是已知的,例如Moraes等人在应用物理学杂志(Journal of Applied Physics)的119,225304(2016)中的“Thermal conductivity andmechanical properties of AlN-based thin films”所描述的,该文献通过参引并入本文中。
第一涂覆件32和第二涂覆件34具有不同的晶体结构、或不同的晶体取向、或不同的成分、或其组合,以提供使用纳米压痕测量的不同硬度。第一涂覆件32的硬度低于第二涂覆件34的硬度。
第一涂覆件32可以称为软材料,而第二涂覆件34可以称为硬材料。在一些实施方式中,第一涂覆件32的硬度在介于0.2GPa至1GPa的范围内,并且第二涂覆件34的硬度在介于1.1GPa至10GPa的范围内。第一涂覆件32和第二涂覆件34的这种组合可以适用于柔性电子设备和刚性电子设备两者,其中,基板10可以分别由比如塑料的柔性材料和比如玻璃或硅晶片的刚性材料制成、或者由柔性材料与刚性材料两者的组合制成。
在一些实施方式中,第一涂覆件32的硬度在介于0.5GPa至10GPa的范围内,并且第二涂覆件34的硬度在介于10.1GPa至20GPa的范围内。第一涂覆件和第二涂覆件的这种组合可以适用于具有刚性基板的刚性电子设备。
在一些实施方式中,第一涂覆件32和第二涂覆件34中的每一者均由热传导材料制成。合适的材料示例包括但不限于氮化硅、氮氧化硅、氮化硼、氮氧化硼、氮化铝、氮氧化铝、氮化铝硼、氮化硅硼、氮化硅铝、SiAlON、氮化钛、氮化钛铝、氮化铬、氮化钨及其组合。SiAlON是包含硅、铝、氧和氮的化合物。
参照图1,在一些实施方式中,保护涂覆层30具有包括第一涂覆件32和第二涂覆件34的两层结构。图1示出了用于诸如指纹传感器的薄膜电子设备的双层保护涂覆层,其中,第二涂覆件34(例如顶部层)比第一涂覆件32(例如底部层)硬。
第一涂覆件32和第二涂覆件34可以包括软材料与硬材料的不同组合。在一些实施方式中,第一涂覆件32和第二涂覆件34由具有不同晶体结构的相同材料、或具有不同取向的相同晶体结构、或不同成分或它们的任何组合制成。
例如,在一些实施方式中,第一涂覆件32由六方氮化硼(h-BN)制成,第二涂覆件34由比h-BN硬的立方氮化硼(c-BN)制成。例如,这可以通过以下方式实现:在有利于六方氮化硼(h-BN)生长的条件下沉积第一涂覆件32,然后通过切换至有利于立方氮化硼(c-BN)生长的条件在第一涂覆件32上沉积第二涂覆件34。在一些实施方式中,六方氮化硼(h-BN)可以包含少量的氢、例如在介于0.1mol%至3mol%的范围内的氢。
在一些实施方式中,作为包括h-BN的底部层的第一涂覆件32可以例如通过利用在膜生长表面下方发生的化学反应来使第一涂覆件32具有拉伸应力,该化学反应有利于在膜形成期间释放氢,从而形成不饱和(unsaturated)的B-N键。
例如,通过例如施加负的基板偏压或增加等离子体强度对生长中的BN膜进行适度的离子轰击,可以使c-BN的顶部层具有压缩应力。压缩应力有助于在双层保护膜的顶部层形成更致密且更硬的c-BN膜,而底部较软的h-BN层具有拉伸应力,从而有助于缓解双层体系中的总体应力。
参考图2,可以利用h-BN和c-BN的晶体结构来解释为什么h-BN比c-BN软。六方BN具有类似于石墨的分层结构。如图2中所示,用于分层结构的例如沿着轴线“a”和轴线“b”的方向的平面被称为六方BN平面或基面。正交于六方BN平面(即图2中的a-b平面)的方向称为“c轴”。在六方BN平面中,硼和氮原子通过每层内的强共价键结合,而沿着c轴的层则通过弱的范德华力(Van der Waals force)保持在一起。在立方BN中,交替连接的硼和氮原子形成四面体键合(bond)网络,如金刚石中的碳原子那样。三维共价晶格使立方BN比六方BN硬得多,六方BN由于层间键合力很弱而较软。
在一些实施方式中,第一涂覆件32和第二涂覆件34由六方氮化硼(h-BN)制成,但是第一涂覆件32和第二涂覆件34具有不同的取向。例如,第一涂覆件32中的氮化硼的六边形平面可以定向为大致平行于保护涂覆层30。第二涂覆件34中的氮化硼的六边形平面可以定向为大致正交于保护涂覆层30,从而在该大致正交于保护涂覆层30的六边形平面的方向上提供更高的硬度和更高的热传导率。
通过在顶部层和底部层两者中均使用h-BN薄膜可以实现如图1中所示的双层保护叠置件。例如,作为包括具有拉伸应力的较软h-BN底部层的第一涂覆件32可以在PECVD系统中使用B2H6-N2气体而首先进行沉积,然后通过切换至B2H6-H2-NH3混合气体来使具有压缩应力的较硬h-BN沉积。由此形成的顶部压缩膜趋于具有织构微观机构,在该织构微观机构中,基面垂直于膜表面。例如,在一些实施方式中,与c-BN的1300Wm-1K-1相比,h-BN的基面热传导率高达400Wm-1K-1,并且可以比平面外的热传导率高一个数量级。因此,这产生了强烈各向异性的热传递,从而有利于在竖向于传感器表面的方向(即图1中的y方向)上进行热移除。这种组合和本文中所述的其它组合为“有源热感测”指纹传感器应用提供了良好的保护涂覆层,在序列号为6,091,837、7,910,902和7,720,265的美国专利中描述了该“有源热感测”指纹传感器应用,该专利通过参引其整体内容并入本文中。如本文中所述,通过在顶部具有较硬膜的双层保护涂覆件可以实现更好的抵抗刮擦和撞击的机械保护,同时通过用膜的压缩应力来抵消膜的拉伸应力,可以使膜的净应力最小化。
在一些实施方式中,例如通过在低能离子轰击的条件下来使保护涂覆层的底部层沉积,然后在高能离子轰击的条件下通过离子辅助沉积(IAD)来使保护涂覆层的顶部层沉积。高能离子轰击导致立方BN含量更高。
在一些实施方式中,第一涂覆件32和第二涂覆件34由类金刚石碳(DLC)制成,并且第二涂覆件34的sp3 DLC结构与sp2 DLC结构的比率高于第一涂覆件的sp3 DLC结构与sp2DLC结构的比率。更高含量的sp3DLC结构为第二涂覆件34提供了更高的硬度。更高含量的sp2DLC结构使第一涂覆件34更软。DLC涂覆件可以包含合适范围内的氢,例如DLC涂覆件可以包含介于0.1mol%至5mol%或介于0.1mol%至2mol%的氢。
在一些实施方式中,第一涂覆件32包括呈非晶形的氮化铝或具有随机定向的六方密堆积的纤锌矿晶体结构的氮化铝,并且第一涂覆件32较软。第二涂覆件34包括具有纤锌矿晶体结构的氮化铝,在纤锌矿晶体结构中,001或002晶面方向(例如图1中的y方向)定向成大致正交于保护涂覆层30,并且第二涂覆件34较硬。
Iqbal等人在传感器(Sensors)、2018,18,1797中的“Reactive sputtering ofaluminum nitride(002)thin films for piezoelectric applications:a review”中描述了氮化铝的晶体结构和生成不同结构的氮化铝的处理条件,该文献通过参引并入本文中。例如,可以对涂覆处理中的氮含量进行调节以改变氮化铝的晶体结构和取向。在一些实施方式中,非晶态的氮化铝或具有随机定向的晶体结构的氮化铝被制成具有高的氮含量、例如在介于60%至100%的范围内的氮含量。较低的氮含量、比如40%的氮含量导致具有纤锌矿晶体结构的氮化铝的002晶面方向定向成正交于涂覆表面。所得到的具有这种优选002取向的氮化铝更硬并且沿着该002取向的方向具有高的热传导率(即对于第二涂覆件34而言的横截面热传导率),例如沿着该002取向的方向的热传导率在介于40W/(m*K)至180W/(m*K)的范围内。
在一些实施方式中,第一涂覆件32和第二涂覆件中的每一者都包括氮化铝和氮化钛的混合物。如本文所述的,具有氮化铝的第一涂覆件32和第二涂覆件34中的至少一者还包括氮化钛。Ti/(A1+Ti)的摩尔比可以在介于0.01至0.6的范围内、例如在介于0.05至0.4的范围内。与氮化钛相比,优选使用氮化铝与氮化钛(AlTiN)的混合物,因为氮化钛可以导电而该混合物不导电。氮化钛和混合物AlTiN可以通过反应溅射来形成。
第一涂覆件32和第二涂覆件34的这些示例性组合仅用于说明。如上所述的用于第一涂覆件32的材料选择可以与用于第二涂覆件34的任何材料选择相结合。如本文中所述的,还可以使用具有相同或相似晶体结构的一些其他材料。
在一些实施方案中,图1中所示的双层保护涂覆层在基板是柔性时是有用的。合适的柔性基板的示例包括但不限于具有单层或多层结构的塑料基板。在弯曲期间,例如在凹形或凸形弯曲期间,较软的底部保护涂覆件32有助于吸收大量的应变,使得可以有效地降低较硬的顶部保护层34中的应变,从而使顶部保护涂覆件34在弯曲时不太可能开裂或变形。较软的底部保护涂覆件32通过允许大量的应变被吸收在薄膜叠置件中的中间较软层中,从而有助于形成多个中性面(在所述多个中性面中膜应力变为零)。
参考图3,在一些实施方式中,示例性设备200包括具有三层夹置结构的保护涂覆层30。与图1中所示的结构相比,图3中的保护涂覆层30包括附加的第二涂覆件34,该附加的第二涂覆件设置在第一涂覆件32下方和薄膜电路层20上方。第一涂覆件32设置并夹置在两层第二涂覆件34之间。
夹置结构中的第一涂覆件32和第二涂覆件34可以包括如上所述的软材料与硬材料的不同组合。例如,在一些实施方式中,第一涂覆件32由六方氮化硼(h-BN)制成,并且第一涂覆件32设置在两层第二涂覆件34之间,所述两层第二涂覆件34由较硬的立方氮化硼(c-BN)制成。
对于另一示例,在一些实施方式中,第一涂覆件32和第二涂覆件34由h-BN制成,但是h-BN的取向不同,如上所述。对于另一示例,在一些实施方式中,第一涂覆件32和第二涂覆件34由类金刚石碳制成,但是sp3结构/sp2结构的比率不同,如上所述。
参照图3,保护涂覆层30的中间层(对应于第一涂覆件32)比顶部层和底部层(对应于第二涂覆件34)软。在这种构型中,可以将具有压缩应力的较硬膜、例如具有基面垂直于膜表面的织构微观结构的h-BN薄膜直接沉积在传感器表面上方,以最大限度地有利于各向异性热传递,从而有利于沿竖向方向移除热。然后,可以通过改变原位(in-situ)生长膜的沉积条件、例如在h-BN膜的生长期间将气体混合物从B2H6-H2-NH3转换为B2H6-N2来实现在三层保护涂覆系统的中间处具有拉伸应力的较软膜。通过将气体混合物从B2H6-N2转换回B2H6-H2-NH3,可以再次实现在顶部处更硬、被压缩且热各向异性的膜。
在一些实施方式中,也可以实现图3所示的三层保护涂覆系统,例如:通过在高能离子轰击的条件下沉积保护涂覆件的底部层,然后在低能离子轰击的条件下沉积中间层,之后在高能离子轰击的条件下通过离子辅助沉积(IAD)来沉积保护涂覆件的顶部层。
在一些实施方式中,夹置结构中的第一涂覆件32和第二涂覆件34可由氮化铝、或者由氮化铝与氮化钛的混合物制成,如上所述。例如,第一涂覆件32可以由非晶态的氮化铝、或者由具有随机定向的纤锌矿晶体结构的氮化铝制成。第二涂覆件34可以由具有纤锌矿晶体结构的氮化铝制成,其中,001或002晶面方向(例如图3中的y方向)定向成大致正交于保护涂覆层30。在一些实施方式中,第一涂覆件32和第二涂覆件34中的每一者都包括氮化铝与氮化钛的混合物。Ti/(A1+Ti)的摩尔比可以在介于0.01至0.6的范围内,例如Ti/(A1+Ti)的摩尔比可以在介于0.05至0.4的范围内。
在具有夹置结构的保护涂覆层30中,第一涂覆件32和第二涂覆件34中的每一者在正交于相应涂覆表面的方向(即图3中的y方向)上的横截面热传导率等于或高于0.5W/(m*K),该横截面热传导率例如等于或高于1W/(m*K)、4W/(m*K)或5W/(m*K)。每个涂覆件和保护涂覆层30的总体热传导率可以高达250W/(m*K)、500W/(m*K)、1000W/(m*K)或2000W/(m*K)。
图1和图3中的结构仅用于说明。保护涂覆层30可以具有第一涂覆件32与第二涂覆件34的不同组合结构。
在一些实施方式中,保护涂覆层30包括如本文中所述的第一涂覆件32与第二涂覆件34交替的多个交替层。例如,保护涂覆层30可以包括第一涂覆件32、第二涂覆件34、第一涂覆件32以及然后包括第二涂覆件34。保护涂覆层30可以包括四个、五个、六个或任何其他合适的涂覆层。
在一些实施方式中,保护涂覆层30的总厚度等于或小于5微米,例如在介于0.2微米至3微米的范围内。每个单独的涂覆层、比如第一涂覆件32和第二涂覆件32可以小于4微米、3微米、2微米或1微米。在第一涂覆件32与第二涂覆件34之间不需要诸如粘合剂的界面层。
通过由三层或多层构型可以获得的更高厚度来实现更好的抵抗刮擦和撞击的机械保护,以及更好的环境保护,其中,可以通过将不同层中的膜的拉伸应力与膜的压缩应力抵消来使膜的净应力最小化。同时,可以实现高热传导率,尤其可以实现在保护涂覆系统的横截面方向上的高热传导率。
参考图1和图3,保护涂覆层30可以具有疏油和/或疏水的顶部表面36。在一些实施方式中,保护涂覆层30还包括在保护涂覆层的顶部表面36上沉积或引入的含氟聚合物或含氟化合物,从而产生有效防污的硬涂覆件。这种具有含氟聚合物或含氟化合物层的顶部表面可以通过对含氧物、比如SiO2进行电子束蒸发,以吸收顶部表面36上的氧,然后通过PVD或喷涂处理将含氟聚合物或含氟化合物沉积。含氟涂覆件可以具有处于分子水平或纳米水平的厚度。在保护涂覆层30上没有涂覆其他材料、比如基板覆盖物,该保护涂覆层30限定了外表面并且用于与使用者的手指直接接触。
在一些实施方式中,即使借助于双层或三层或多层设计来抵消残余膜应力,仍可以将用于保护膜叠置件的总的实际厚度限制在5μm或5μm以下。
参照图4,示例性设备400包括:基板10;设置在基板10上方的薄膜电路层20;以及设置在薄膜电路层20上方的保护涂覆层40。这种保护涂覆层40包括厚膜涂覆件,例如具有5μm或更大厚度的厚膜。在一些实施方式中,厚膜涂覆件包含至少80wt.%的至少一种具有高热传导率的无机填料,以便在保护涂覆层40中提供热传导率大于10W/(m*K)的厚膜涂覆件。合适的无机颗粒可以是如上所述的用于第一涂覆件32或第二涂覆件34的任何材料。无机颗粒可以是任何合适的形状,比如球形或长形的颗粒。
厚度大于5μm的保护涂覆结构可以提供甚至更好的抵抗刮擦和撞击(比如笔掉落)的保护。这些可以通过诸如丝网印刷(screen printing)的厚膜加工技术来加工。在一些实施方式中,“薄膜”和“厚膜”可以由厚度来定义。然而,在大多数其他实施方式中,“薄膜”与“厚膜”之间的区别可能不是由将两者分开的确切厚度值(比如5μm)来定义的。“薄膜”可以通过真空技术来沉积,而“厚膜”可以通过非真空技术、比如丝网印刷来沉积,因此两者之间的区别可能取决于沉积技术的不同。在丝网印刷之前,通过将诸如BN、SiC或AIN之类的高热传导率颗粒分散到具有高Tg的聚合物粘合剂(比如聚碳酸酯)的溶液中来制备浆料(paste),然后通过低沸点溶剂(比如氯仿)来调整该浆料的粘度。对溶剂的适当选择可以在刚性基板和柔性基板上进行平滑地印刷,而无需在印刷后进行热处理。保护涂覆层40可以包括无机颗粒和有机聚合物的复合物。无机高热传导率颗粒的负载可以高于80wt%,并且可以实现大于10Wm-1K-1的热传导率。与图1和图3中所示的构型相比,在一些实施方式中,图4中的厚膜保护涂覆层40通过较厚且热传导率较低的膜提供了更好的机械保护,但代价是热传递速率降低。
在一些实施方式中,厚膜涂覆件的顶部表面通过在厚膜浆料成分中使用低沸点溶剂而变得平滑。这样的溶剂有助于对厚膜浆料成分进行室温干燥,并且使厚膜涂覆件更快地粘附至位于下面的、基板10上方的薄膜电路层20。基板可以是如上所述的柔性基板、刚性基板及其组合。
图1至图4中所示的示例旨在说明本发明中体现的原理。可以对本文中出于说明目而选择的实施方式做出各种更改和修改。在这些改型和变型不背离本发明精神的范围内,这些改型和变型旨在被包括在仅通过对所附权利要求的合理解释来评估的范围内。
例如,虽然已经使用诸如氮化硼、DLC、氮化铝和氮化铝钛之类的材料来说明图1和图3中所示的实施方式,但是其他合适的材料包括但不限于碳化硅、金刚石和其他氮化物或氮氧化物。这样的氮化物或氮氧化物可以是具有单一或混合金属或非金属的各种非金属、过渡金属和后过渡金属。其他氮化物或氮氧化物包括但不限于氮化硅、氮氧化硅、氮氧化硼、氮氧化铝、氮化铝硼、氮化硅硼、氮化硅铝、SiAlON、氮化铬、氮化钨及其各种混合物。
本公开还提供了如上所述的保护涂覆层30或层40。本公开提供了形成保护涂覆层30和层40以及制造上述电子设备100或200或400的方法。
参照图5A,用于制造电子设备的示例性方法包括步骤510和520。在步骤510,提供待加工的电子设备。该被加工的设备包括基板10和设置在基板10上方的薄膜电路层20。
在步骤520,将保护涂覆层30形成在薄膜电路层20上方。
参照图5B,形成保护涂覆层30的步骤包括至少一个步骤522和一个步骤524。在步骤522,形成如上所述的第一涂覆件32。在步骤524,形成如上所述的第二涂覆件34。
第一涂覆件32和第二涂覆件34中的每一者可以使用适当的涂覆处理来形成。适当的涂覆处理的示例包括但不限于化学气相沉积(CVD)、物理气相沉积(PVD)、离子辅助沉积(IAD)、溅射及其组合。例如,CVD工艺可以包括等离子体增强化学气相沉积(PECVD)。PECVD或溅射工艺可以包括离子轰击。PVD技术可以包括IAD或与IAD组合。IAD工艺可以包括离子辅助电子束蒸发。在一些实施方式中,溅射工艺可以是反应溅射。
例如,在一些实施方式中,可以通过调节基板偏压、溅射功率和脉冲宽度等,分别采用较低能量和较高能量的离子轰击进行溅射来使氮化物或氮氧化物或类金刚石碳(DLC)的较软和较硬涂覆件沉积。在一些实施方式中,可以通过调节离子源电流和蒸发源参数等,分别采用较低能量和较高能量的离子轰击进行离子辅助沉积来使氮化物或氮氧化物或类金刚石碳(DLC)的较软和较硬涂覆件沉积。
例如,使用B2H6-H2-NH3气体系统,可以在300℃处在30Pa至60Pa的气体压力下使用0.25W/cm2至0.5W/cm2的射频(radio frequency)(RF)生长出具有压缩应力和具有基面与膜表面垂直的织构微观结构的较硬h-BN膜。使用B2H6-N2气体系统,可以在300℃处在10Pa至30Pa的气体压力下使用0.5W/cm2的射频RF生长出具有拉伸应力的较软的h-BN膜。
涂覆程序取决于保护涂覆层30的结构。可以使用两个或更多个步骤522和524。例如,参考图5C,可以通过依次包括步骤524、522和524的至少三个步骤来制造具有如图3中所示的夹置结构的保护涂覆层30。首先,将一层第二涂覆件34涂覆在薄膜涂覆层20上方。然后在步骤522,将第一涂覆件32形成在第二涂覆件34的层上方。将另一层第二涂覆件34形成在第一涂覆件32上方,以形成夹置涂覆结构。
尽管已经根据示例性实施方式描述了本主题,但是本主题不限于此。相反,所附权利要求应被广义地解释为包括本领域技术人员可以作出的其他变型和实施方式。
Claims (17)
1.一种电子设备,包括:
基板;
薄膜电路层,所述薄膜电路层设置在所述基板上方;以及
保护涂覆层,所述保护涂覆层设置在所述薄膜电路层上方,所述保护涂覆层包括:
第一涂覆件;以及
第二涂覆件,所述第二涂覆件设置在所述第一涂覆件上方,其中
所述第一涂覆件和所述第二涂覆件具有热传导性,所述第一涂覆件和所述第二涂覆件中的每一者在正交于相应涂覆表面的方向上的横截面热传导率高于0.5W/(m*K),以及所述第一涂覆件的硬度低于所述第二涂覆件的硬度,
所述第一涂覆件和所述第二涂覆件选自以下各项中的一者以提供使用纳米压痕测量的不同硬度:
1)所述第一涂覆件是六方氮化硼(h-BN),并且所述第二涂覆件是立方氮化硼(c-BN);或者
2)所述第一涂覆件和所述第二涂覆件的材料是六方晶体结构的氮化硼(h-BN),其中所述第一涂覆件中的氮化硼的六边形平面定向成大致平行于所述保护涂覆层,并且所述第二涂覆件中的氮化硼的六边形平面定向成大致正交于所述保护涂覆层;或者
3)所述第一涂覆件和所述第二涂覆件的材料是类金刚石碳,其中所述第二涂覆件的sp3类金刚石碳结构与sp2类金刚石碳结构的比率高于所述第一涂覆件的sp3类金刚石碳结构与sp2类金刚石碳结构的比率;或者
4)所述第一涂覆件和所述第二涂覆件的材料是氮化铝,其中所述第一涂覆件包括非晶态的氮化铝或具有随机定向的纤锌矿晶体结构的氮化铝,并且所述第二涂覆件包括具有纤锌矿晶体结构的氮化铝,在所述纤锌矿晶体结构中,001或002晶面方向定向成大致正交于所述保护涂覆层。
2.根据权利要求1所述的电子设备,其中,所述第一涂覆件的硬度在介于0.2GPa至1GPa的范围内,并且所述第二涂覆件的硬度在介于1.1GPa至10GPa的范围内。
3.根据权利要求1所述的电子设备,其中,所述第一涂覆件的硬度在介于0.5GPa至10GPa的范围内,并且所述第二涂覆件的硬度在介于10.1GPa至20GPa的范围内。
4.根据权利要求1所述的电子设备,其中,所述保护涂覆层具有包括所述第一涂覆件和所述第二涂覆件的两层结构。
5.根据权利要求1所述的电子设备,其中,所述保护涂覆层具有三层夹置结构,所述三层夹置结构包括设置在所述第一涂覆件下方和所述薄膜电路层上方的附加的第二涂覆件。
6.根据权利要求1所述的电子设备,其中,所述保护涂覆层包括多个交替层,在所述多个交替层中,所述第一涂覆件与所述第二涂覆件交替设置。
7.根据权利要求1所述的电子设备,其中,对于所述第一涂覆件和所述第二涂覆件中的至少一者而言,所述材料是氮化铝与氮化钛组合的组合物,其中Ti/(Al+Ti)的摩尔比在介于0.01至0.6的范围内。
8.根据权利要求7所述的电子设备,其中,Ti/(Al+Ti)的摩尔比在介于0.05至0.4的范围内。
9.根据权利要求1所述的电子设备,其中,所述保护涂覆层的厚度等于或小于5微米。
10.根据权利要求1所述的电子设备,其中,所述基板包括聚合物,并且所述电子设备是柔性的。
11.根据权利要求1所述的电子设备,其中,所述基板包括玻璃或硅晶片,并且所述电子设备是刚性的。
12.根据权利要求1所述的电子设备,其中,所述基板包括聚合物与玻璃或硅晶片的组合。
13.根据权利要求1所述的电子设备,其中,所述薄膜电路层包括指纹传感器。
14.根据权利要求1所述的电子设备,其中,所述保护涂覆层还包括在所述保护涂覆层的顶部表面上沉积或引入的含氟聚合物或含氟化合物。
15.一种制造根据权利要求1所述的电子设备的方法,所述方法包括以下步骤:
提供待加工的电子设备,所述电子设备包括所述基板和设置在所述基板上方的所述薄膜电路层;以及
将所述保护涂覆层形成在所述薄膜电路层上方。
16.根据权利要求15所述的方法,其中,形成所述保护涂覆层的步骤包括形成所述第一涂覆件的至少一个步骤;以及形成所述第二涂覆件的至少一个步骤。
17.根据权利要求16所述的方法,其中,所述第一涂覆件和所述第二涂覆件是使用选自以下各者的涂覆处理来形成的:化学气相沉积、物理气相沉积、离子辅助沉积、溅射、及其组合。
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