JP6796519B2 - エッチング方法 - Google Patents
エッチング方法 Download PDFInfo
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- JP6796519B2 JP6796519B2 JP2017046473A JP2017046473A JP6796519B2 JP 6796519 B2 JP6796519 B2 JP 6796519B2 JP 2017046473 A JP2017046473 A JP 2017046473A JP 2017046473 A JP2017046473 A JP 2017046473A JP 6796519 B2 JP6796519 B2 JP 6796519B2
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- 238000000034 method Methods 0.000 title claims description 64
- 238000005530 etching Methods 0.000 title claims description 27
- 239000007789 gas Substances 0.000 claims description 147
- 239000000463 material Substances 0.000 claims description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 229910052731 fluorine Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 19
- 239000011737 fluorine Substances 0.000 claims description 17
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 16
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 12
- 125000001153 fluoro group Chemical group F* 0.000 claims description 9
- 239000007800 oxidant agent Substances 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- 239000010408 film Substances 0.000 description 108
- 239000002344 surface layer Substances 0.000 description 18
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 14
- 239000010410 layer Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
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- Crystals, And After-Treatments Of Crystals (AREA)
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Description
表層部SUと溝部TRとは、主面6に設けられている。
主面6において、表層部SUと溝部TRとは交互に設けられている。
表層部SUの端面SU1は、ウエハWの主面6において、パターン形状を画定している。
工程S2および工程S3は、例えば以下の条件で実施され得る。なお、以下の条件は、処理室4の内側の表面にプリコート膜PCが形成されていない場合の条件である。
・処理室4内の圧力の値[Pa]:0.67〜13.3[Pa]
・高周波電源15の周波数の値[MHz]および高周波電力の値[ワット]:13.56[MHz]、0〜200[ワット]
・高周波電源29の周波数の値[MHz]およバイアス電力の値[ワット]:6[MHz]、0〜600[ワット]
・処理ガス:O2ガス(第1のガス)、SiF4ガス(第2のガス)
工程S1で用いられる処理室4の内側の表面には、シリコンとフッ素とを含有するプリコート膜PCが形成されている場合がある。プリコート膜PCの膜厚は約100[nm]以下である。またプリコート膜PCの形成場所は処理室4内のほぼ全面である。
Claims (12)
- 被処理体に対するエッチング方法であって、該被処理体は主面と溝部と被エッチング膜とを含み、該溝部は該主面に設けられており、該被エッチング膜は該主面と該溝部の表面とを覆い、該方法は、
プラズマ処理装置の処理室内に前記被処理体を収容する第1工程と、
前記第1工程の後に、前記処理室内に第1のガスの供給を開始する第2工程と、
前記第2工程の後に、第2のガスとプラズマ生成用高周波電力とを前記処理室内に供給して該第2のガスを含む該処理室内のガスによるプラズマを該処理室内において生成する処理を開始する第3工程と、
を備え、
前記第1のガスは、水素原子を含まない酸化剤を含有するガスであり、
前記第2のガスは、ケイ素原子およびフッ素原子を含み水素原子を含まない化合物を含有するガスであり、
前記被エッチング膜の材料は、フッ素を用いたドライエッチングが可能な材料であり、
前記被エッチング膜のうち前記溝部の前記表面を覆う部分のみが、選択的に除去される、
方法。 - 前記被エッチング膜の材料は、TiNまたはSiNである、
請求項1に記載の方法。 - 前記第3工程の実行時における前記被処理体の温度は、摂氏450度未満である、
請求項1または請求項2に記載の方法。 - 前記被エッチング膜の材料がTiNの場合に、前記第3工程の実行時における前記被処理体の温度は、摂氏250度未満である、
請求項1に記載の方法。 - 前記被エッチング膜の材料がSiNの場合に、前記第3工程の実行時における前記被処理体の温度は、摂氏250度以上且つ摂氏450度未満である、
請求項1に記載の方法。 - 前記第2のガスは、SixFy(x,yは1以上の整数)の組成を有する一または複数の種類のガスを含有する、
請求項1〜5の何れか一項に記載の方法。 - 前記第2のガスは、SiF4を含有するガス、または、SiF4とSi2F6とを共にを含有するガスである、
請求項6に記載の方法。 - 前記第1のガスは、O2、O3、NxOy(x,yは1以上の整数)の何れかを含有するガスである、
請求項1〜7の何れか一項に記載の方法。 - 前記第2のガスは、希ガスを更に含有する、
請求項1〜8の何れか一項に記載の方法。 - 前記第3工程において、前記処理室内への前記第2のガスの供給を開始する第1の開始タイミングは、該処理室内への前記プラズマ生成用高周波電力の供給を開始する第2の開始タイミングの以後の期間内にある、
請求項1〜9の何れか一項に記載の方法。 - 前記第3工程の後に、プラズマの生成を終了する第4工程をさらに備え、
前記第4工程において、前記処理室内への前記第2のガスの供給を終了する第1の終了タイミングは、該処理室内への前記プラズマ生成用高周波電力の供給を終了する第2の終了タイミングの以後であって且つ該処理室内への前記第1のガスの供給を終了する第3の終了タイミングよりも前の期間内にある、または、該第2の終了タイミングよりも後であって且つ該第3の終了タイミングの以前の期間内にある、
請求項1〜10の何れか一項に記載の方法。 - 前記第1工程において、前記処理室の内側の表面は、シリコンとフッ素とを含有するプリコート膜で覆われている部分を有する、
請求項1〜11の何れか一項に記載の方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017046473A JP6796519B2 (ja) | 2017-03-10 | 2017-03-10 | エッチング方法 |
TW107107420A TWI775819B (zh) | 2017-03-10 | 2018-03-06 | 蝕刻方法 |
US15/915,782 US10483135B2 (en) | 2017-03-10 | 2018-03-08 | Etching method |
KR1020180027209A KR102129164B1 (ko) | 2017-03-10 | 2018-03-08 | 에칭 방법 |
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JP2017046473A JP6796519B2 (ja) | 2017-03-10 | 2017-03-10 | エッチング方法 |
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JP2018152425A JP2018152425A (ja) | 2018-09-27 |
JP6796519B2 true JP6796519B2 (ja) | 2020-12-09 |
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JP2017046473A Active JP6796519B2 (ja) | 2017-03-10 | 2017-03-10 | エッチング方法 |
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US (1) | US10483135B2 (ja) |
JP (1) | JP6796519B2 (ja) |
KR (1) | KR102129164B1 (ja) |
TW (1) | TWI775819B (ja) |
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WO2019035830A1 (en) * | 2017-08-16 | 2019-02-21 | Ecosense Lighting Inc | MULTI-CHANNEL WHITE LIGHT DEVICE FOR HIGH-COLOR RENDERABLE WHITE LED ACCORDING LIGHT DELIVERY |
WO2019053806A1 (ja) * | 2017-09-13 | 2019-03-21 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
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