KR102075805B1 - 반도체 표면의 기상 황 패시베이션을 위한 시스템 및 방법 - Google Patents
반도체 표면의 기상 황 패시베이션을 위한 시스템 및 방법 Download PDFInfo
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- KR102075805B1 KR102075805B1 KR1020130088450A KR20130088450A KR102075805B1 KR 102075805 B1 KR102075805 B1 KR 102075805B1 KR 1020130088450 A KR1020130088450 A KR 1020130088450A KR 20130088450 A KR20130088450 A KR 20130088450A KR 102075805 B1 KR102075805 B1 KR 102075805B1
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- Prior art keywords
- semiconductor
- reactor
- sulfur precursor
- vapor phase
- reaction chamber
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims abstract description 71
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 229910052717 sulfur Inorganic materials 0.000 title claims abstract description 47
- 239000011593 sulfur Substances 0.000 title claims abstract description 47
- 238000002161 passivation Methods 0.000 title claims description 35
- 239000002243 precursor Substances 0.000 claims abstract description 42
- 239000012808 vapor phase Substances 0.000 claims abstract description 14
- 230000008569 process Effects 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 25
- 238000000151 deposition Methods 0.000 claims description 20
- 239000003989 dielectric material Substances 0.000 claims description 19
- 238000000231 atomic layer deposition Methods 0.000 claims description 11
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 10
- 239000012159 carrier gas Substances 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 238000011065 in-situ storage Methods 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 22
- 239000000243 solution Substances 0.000 description 14
- 230000008021 deposition Effects 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 10
- 239000012071 phase Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 239000006185 dispersion Substances 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 229910000449 hafnium oxide Inorganic materials 0.000 description 6
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000010926 purge Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000003949 trap density measurement Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000011066 ex-situ storage Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 230000005527 interface trap Effects 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- -1 Thiourea Chemical class 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 description 1
- VQANKOFXSBIWDC-UHFFFAOYSA-N [Si]=O.[Ta] Chemical class [Si]=O.[Ta] VQANKOFXSBIWDC-UHFFFAOYSA-N 0.000 description 1
- OEBXVKWKYKWDDA-UHFFFAOYSA-N [Ta].[Bi].[Sr] Chemical compound [Ta].[Bi].[Sr] OEBXVKWKYKWDDA-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000008346 aqueous phase Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
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- 238000005530 etching Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910000311 lanthanide oxide Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 150000002898 organic sulfur compounds Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
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- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
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- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
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- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02301—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment in-situ cleaning
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- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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Abstract
고 이동도 반도체의 표면을 패시베이션하기 위한 개선된 방법들 및 시스템들 그리고 이 방법들을 이용하여 형성된 구조물들 및 디바이스들이 개시되어 있다. 이 방법은 고 이동도 반도체 표면을 반응기의 챔버에 제공하는 단계, 및 고 이동도 반도체 표면을 기상 황 전구체에 노출시켜 고 이동도 반도체 표면을 패시베이션하는 단계를 포함한다.
Description
이 출원은, 2012년 7월 27일자로 출원되고 발명의 명칭이 "SYSTEM AND METHOD FOR GAS-PHASE SULFUR PASSIVATION OF A SEMICONDUCTOR SURFACE" 인 미국 가출원 제61/676,829호의 우선권 및 이익을 주장하며, 그 개시내용들이 본 개시물과 상충하지 않는 정도로 그 개시내용들은 참조로서 본 명세서에 통합된다.
본 개시물은 반도체 디바이스들을 제조하는데 이용되는 방법들 및 시스템들, 그리고 이 시스템들 및 방법들을 이용하여 형성된 디바이스들에 관한 것이다. 보다 구체적으로, 본 개시물의 예시적인 실시형태들은 반도체 표면의 기상 황 패시베이션을 위한 시스템들 및 방법들에 관한 것이다.
게르마늄 및 화합물 반도체들 (예컨대, III-V 화합물 반도체들) 과 같은 고이동도 (high-mobility) 반도체들은, 그들의 비교적 높은 전자 및/또는 정공 이동도 때문에 반도체 디바이스들의 제조시 사용하기에 바람직할 수도 있다. 고 이동도 반도체 재료로 형성된 디바이스들은 이론적으로, 보다 양호한 성능, 보다 빠른 속도, 감소된 전력 소비를 나타내며, 규소와 같은, 더 낮은 이동도의 반도체로 형성된 유사한 디바이스들에 비해서 더 높은 브레이크다운 필드들 (breakdown fields) 을 가질 수도 있다.
고 이동도 반도체 재료들은, 예를 들어 금속 산화물 반도체 전계 효과 트랜지스터 (MOSFET) 디바이스들을 제조하기 위해 사용될 수도 있다. 통상의 MOSFET 디바이스는, 반도체 재료로 각각 형성된, 소스 영역, 드레인 영역 및 채널 영역을 포함한다. MOSFET 는 또한, 채널 영역의 위에 놓이는 유전체 재료 (게이트 유전체) 및 도전성 재료 (예컨대, 금속) 를 포함한다. 유전체 재료 및 도전성 재료는, 화학 기상 증착, 플라즈마-강화 화학 기상 증착, 원자층 증착, 물리 기상 증착 등과 같은, 진공 또는 기상 증착 기법들을 이용하여 각각의 재료들을 성막함으로써 형성된다.
불행하게도, 게르마늄 또는 III-V 반도체 재료들과 같은 고 이동도 반도체 재료들로 형성된 디바이스의 채널 영역과, 게이트 유전체 (예컨대, 고 유전율 (k) 재료들) 사이의 계면은 통상, 큰 계면 트랩 밀도 (Dit; interface trap density) 를 포함한다. 높은 Dit 값들은, 고 이동도 반도체 재료의 표면에서의 베이컨시들 (vacancies) 및 댕글링 본드들에서 기인한다고 생각되고, 높은 Dit 값들은, 고 이동도 재료들로 형성된 디바이스들의 성능에 악영향을 미치며, 이러한 고 이동도 반도체 재료들을 사용한 상보형 금속 산화물 반도체 (CMOS) 디바이스들의 개발에 대한 기술적 과제가 되었다.
감소된 계면 트랩 밀도들을 달성하기 위해서, 유전체 성막 이전에 고 이동도 반도체 표면을 패시베이션하기 위한 다양한 접근법들이 시도되었다. 예를 들어, 습식 화학 (NH4)2S 용액들 내에 재료들을 침지시킴으로써 황으로 패시베이션된 III-V 반도체 재료들은 개선된 계면 특성들을 나타내어, 개선된 디바이스 성능을 야기하였다. 그러나, 침지 기반 패시베이션 프로세스는, 후속 유전체 재료 성막에 사용되는 진공 또는 기상 증착 시스템 내로 통합되기 어렵다. 그리하여, 습식 화학 용액 기법들을 이용한 황 패시베이션 다음에 그리고 유전체 재료의 후속 성막 이전에 원치 않는 공기 노출 시간이 존재한다. 패시베이션층이 이 노출 동안 산화물 재성장을 완전히 방지할 수 없고, 그리고 게르마늄 및 III-V 반도체 표면들 상의 산화물 성장은 일반적으로 Dit 를 증가시키기 때문에, 이 공기 노출은 디바이스 성능에 심각하게 영향을 줄 수 있다. 또한, 상승 온도 (예컨대, >100℃) 에서 용액-기반 패시베이션을 수행하는 것은 문제가 있으며; 따라서, (NH4)2S 의 반응성이 제한된다.
따라서, 고 이동도 반도체 재료들의 표면을 패시베이션하기 위한 개선된 방법들 및 시스템들, 그리고 이 방법들 및 시스템들을 이용하여 형성된 디바이스들이 요구된다.
본 개시물의 다양한 실시형태들은, (고상, 액상 또는 기상으로서 유래할 수도 있는) 기상 황 전구체를 사용하여 반도체의 표면을 패시베이션하기 위한 개선된 시스템들 및 방법들, 그리고 이 시스템들 및/또는 방법들을 이용하여 형성된 디바이스들을 제공한다. 종래 기술의 다양한 결점들이 이하 더욱 상세하게 서술되지만, 일반적으로 이 시스템들 및 방법들은 비교적 낮은 Dit 값들을 갖는 고 이동도 반도체 재료들을 사용하여 반도체 디바이스들을 제조하는데 이용될 수 있다.
본 개시물의 다양한 실시형태들에 따르면, 시스템은 진공 및/또는 기상 (예컨대, 대기의 (atmospheric) 기상) 반응기, 및 반응기와 유체 연통하는 황 전구체 소스를 포함하며, 황 전구체 소스는 반응기의 반응 챔버 내부에 기상 황 전구체를 제공한다.
본 개시물의 다른 실시형태들에 따르면, 고 이동도 반도체의 표면을 패시베이션하는 방법은, 반도체 표면을 반응기의 챔버에 제공하는 단계, 고 이동도 반도체의 표면을 기상 황 전구체에 노출시키는 단계, 및 기상 황 전구체를 사용하여 고 이동도 반도체의 표면을 패시베이션하여, 패시베이션된 고 이동도 반도체 표면을 형성하는 단계를 포함한다.
본 개시물의 또 다른 실시형태들에 따르면, 디바이스는, 진공 및/또는 기상 반응기 및 반응기에 유체 커플링된 황 전구체 소스를 포함하는 시스템을 사용하여 형성되고, 황 전구체 소스는 반응기의 반응 챔버 내부에 기상 황 전구체를 제공한다.
그리고, 추가적인 실시형태들에 따르면, 디바이스는, 반응기의 반응 챔버 내부의 기상 황 전구체에 고 이동도 반도체 표면을 노출시키는 단계를 포함하는 방법을 이용하여 형성된다.
상술한 개요 및 하기 상세한 설명 모두는 오직 설명적이며 예시적이고, 본 개시물을 제한하지 않는다.
하기 예시적인 도면들과 관련하여 고려될 때에 상세한 설명 및 청구항들을 참조함으로써 본 개시물의 실시형태들의 보다 완전한 이해가 도출될 수도 있다.
도 1 은 본 개시물의 다양한 예시적인 실시형태들에 따른 예시적인 시스템을 도시한다.
도 2 는 기상 패시베이션 프로세스 및 수상 (aqueous-phase) 패시베이션 프로세스로 처리된 고 이동도 반도체 표면들의 표면 상의 황의 양의 비교를 도시한다.
도 3 의 (a) 내지 (c) 는 기상 황 전구체로 패시베이션된 반도체 표면의 XPS 그래프들을 도시한다.
도 4 의 (a) 내지 (d) 는 패시베이션된 고 이동도 반도체 표면과 패시베이션되지 않은 고 이동도 반도체 표면을 포함하는 구조물들의 캐패시턴스-전압 특징들을 도시한다.
도 5 의 (a) 내지 (c) 는 패시베이션된 고 이동도 반도체 표면과 패시베이션되지 않은 고 이동도 반도체 표면을 포함하는 구조물들의 추가적인 캐패시턴스-전압 특징들을 도시한다.
도 6 의 (a) 내지 (c) 는 패시베이션된 표면과 패시베이션되지 않은 표면을 포함하는 게르마늄 구조물들의 추가적인 캐패시턴스-전압 특징들을 도시한다.
도면들 내의 엘리먼트들은 간단함 및 명료함을 위해 도시되며 반드시 일정한 비율로 묘사되지는 않음이 이해될 것이다. 예를 들어, 본 개시물의 예시된 실시형태들의 이해 향상을 돕기 위해 도면들 내의 엘리먼트들의 일부의 치수들은 다른 엘리먼트들에 비해 과장되어 있을 수도 있다.
도 1 은 본 개시물의 다양한 예시적인 실시형태들에 따른 예시적인 시스템을 도시한다.
도 2 는 기상 패시베이션 프로세스 및 수상 (aqueous-phase) 패시베이션 프로세스로 처리된 고 이동도 반도체 표면들의 표면 상의 황의 양의 비교를 도시한다.
도 3 의 (a) 내지 (c) 는 기상 황 전구체로 패시베이션된 반도체 표면의 XPS 그래프들을 도시한다.
도 4 의 (a) 내지 (d) 는 패시베이션된 고 이동도 반도체 표면과 패시베이션되지 않은 고 이동도 반도체 표면을 포함하는 구조물들의 캐패시턴스-전압 특징들을 도시한다.
도 5 의 (a) 내지 (c) 는 패시베이션된 고 이동도 반도체 표면과 패시베이션되지 않은 고 이동도 반도체 표면을 포함하는 구조물들의 추가적인 캐패시턴스-전압 특징들을 도시한다.
도 6 의 (a) 내지 (c) 는 패시베이션된 표면과 패시베이션되지 않은 표면을 포함하는 게르마늄 구조물들의 추가적인 캐패시턴스-전압 특징들을 도시한다.
도면들 내의 엘리먼트들은 간단함 및 명료함을 위해 도시되며 반드시 일정한 비율로 묘사되지는 않음이 이해될 것이다. 예를 들어, 본 개시물의 예시된 실시형태들의 이해 향상을 돕기 위해 도면들 내의 엘리먼트들의 일부의 치수들은 다른 엘리먼트들에 비해 과장되어 있을 수도 있다.
이하 제공된 시스템들, 방법들 및 디바이스들의 예시적인 실시형태들의 기재는 단지 설명적이며, 예시를 목적으로 의도된 것이며; 하기 기재는 본 개시물의 범위를 제한하도록 의도된 것이 아니다. 게다가, 서술된 특징들을 갖는 다수의 실시형태들의 열거는, 추가적인 특징들을 갖는 다른 실시형태들 또는 서술된 특징들의 상이한 조합들을 통합하는 다른 실시형태들을 배제하도록 의도된 것이 아니다.
이하 더욱 상세하게 설명되는 바와 같이, 본 명세서에 기재된 시스템들 및 방법들은, 반도체 (예컨대, 게르마늄 (Ge) 또는 III-V 반도체와 같은 고 이동도 반도체) 의 표면을 패시베이션하는데 사용될 수 있다. 본 명세서에 사용되는 바와 같이, "표면" 은 노출된 반도체 표면의 임의의 일부를 의미한다. 예를 들어, 표면은 반도체 웨이퍼 및/또는 층의 전체 외면 또는 그 일부, 또는 그 위의 반도체 웨이퍼 및/또는 층의 상단면, 또는 상기 둘 중 일부일 수도 있다.
이제 도 1 로 돌아가면, 반도체 표면을 패시베이션하기 위한 시스템 (100) 이 도시되어 있다. 시스템 (100) 은 반응 챔버 (103), 기판 홀더 (104) 및 가스 분배 시스템 (106) 을 포함하는 반응기 (102); 황 전구체 소스 (108); 캐리어 또는 퍼지 가스 소스 (110) ; 그리고 소스들 (108, 110) 과 반응기 (102) 사이에 개재된 밸브들 (112, 114) 을 포함한다.
반응기 (102) 는 클러스터 툴의 일부 또는 독립형 반응기일 수도 있다. 또한, 반응기 (102) 는 본 명세서에 기재된 바와 같은 표면 패시베이션 프로세스에 전용될 수도 있고, 또는 반응기 (102) 는 다른 프로세스들, 예컨대 층 성막 및/또는 에칭 프로세싱에 사용될 수도 있다. 예를 들어, 반응기 (102) 는 화학 기상 증착 (CVD) 및/또는 원자층 증착 (ALD) 프로세싱에 통상 사용되는 반응기를 포함할 수도 있고, 직접 플라즈마 및/또는 원격 플라즈마 장치를 포함할 수도 있다. 패시베이션 프로세스 동안 플라즈마를 이용하는 것은 황 전구체의 반응성을 향상시킬 수도 있다. 또한, 반응기 (102) 는 진공 또는 대기압 근방에서 동작할 수도 있다. 일 예로써, 반응기 (102) 는 기판 (105) 상으로의 유전체 재료의 후속 ALD 성막에 적합한 반응기를 포함한다. 시스템 (100) 에 적합한 예시적인 ALD 반응기가 미국 특허 제8,152,922호에 기재되어 있으며, 그 개시내용들이 본 개시물과 상충하지 않는 정도로 그 개시내용들은 참조로서 본 명세서에 통합된다.
기판 홀더 (104) 는 프로세싱 동안 적소에, 반도체 표면을 갖는 기판 또는 워크피스 (105) 를 홀딩하도록 설계되어 있다. 다양한 예시적인 실시형태들에 따르면, 홀더 (104) 는 직접 플라즈마 회로의 일부를 형성할 수도 있다. 추가적으로 또는 대안으로서, 홀더 (104) 는 프로세싱 동안 가열되거나, 냉각되거나, 또는 주변 프로세스 온도로 존재할 수도 있다.
가스 분배 시스템 (106) 은 블록 형태로 도시되어 있지만, 가스 분배 시스템 (106) 은 비교적 복잡할 수도 있고, 반응기 (102) 의 나머지에 가스 혼합물을 분배하기 이전에, 가스 소스 (110) 와 같은 하나 이상의 소스들로부터의 캐리어/퍼지 가스 및 황 전구체 소스 (108) 로부터의 증기 (가스) 를 혼합하도록 설계될 수도 있다. 또한, 시스템 (106) 은 반도체 표면에 가스들의 (도시된 바와 같은) 수직 또는 수평 흐름을 제공하도록 구성될 수도 있다. 예시적인 가스 분배 시스템은 미국 특허 제8,152,922호에 기재되어 있다.
황 전구체 소스 (108) 는, 반도체 표면을 패시베이션하는데 적합한 황 함유 재료의 액체, 고체 또는 가스 소스일 수도 있다. 황 전구체 소스 (108) 가 액체 또는 고체인 경우, 소스 재료는 반응 챔버 (103) 에 진입하기 이전에 기화된다. 소스 (108) 용의 예시적인 황 전구체들은, (NH4)2S 용액 ((NH4)2S 수용액, 예컨대 22% 용액), H2S 가스, NH4HS 고체 및 유기황 화합물들, 예컨대 티오우레아, SC(NH2)2 를 포함한다.
황 전구체 (108) 는 여러 가지 반도체 재료 표면들을 패시베이션하기 위해 사용될 수도 있다. 예를 들어, 전구체는, 게르마늄 및 III-V 반도체들과 같은 도핑된 또는 비도핑된 고 이동도 반도체들, 예컨대 GaAs, InGaAs, Ga 및/또는 As 를 포함하는 다른 III-V 반도체들, 및 다른 III-V 재료들을 패시베이션하기 위해 사용될 수도 있다. 예로써, 시스템 (100) 은 In0 .53Ga0 .47As 와 같은 도핑된 또는 비도핑된 InGaAs 를 포함하는 반도체 표면을 패시베이션하기 위해 사용될 수도 있다.
캐리어 또는 퍼지 가스 소스 (110) 는, 반도체 표면의 황 패시베이션 이전에 및/또는 이후에 반응기 (102) 를 퍼징하는데 적합한 임의의 가스 및/또는 소스 (108) 로부터의 황 전구체와 혼합하는데 적합한 임의의 적합한 캐리어 가스를 포함할 수도 있다. 본 개시물의 예시적인 실시형태들에 따르면, 퍼지 가스는 질소, 아르곤, 헬륨, 또는 그들의 조합일 수도 있다. 캐리어 가스는 질소, 아르곤, 헬륨, 또는 그들의 조합일 수도 있다.
시스템 (100) 은 또한 세정 소스 (116) 를 포함할 수도 있으며, 세정 소스는 패시베이션 이전에 반도체 표면을 세정하기 위한 고상, 액상 또는 기상 화학물질들을 포함한다. 예를 들어, 소스 (116) 는, 반도체 표면으로부터 자연 산화물들을 제거하기 위해, 챔버 (103) 에 진입할 때에 기상인 화학물질들을 포함할 수도 있다. 소스 (116) 에 적합한 예시적인 화학물질들은 HCl, HF, NH4OH, H2 및 수소 플라즈마를 포함한다.
도 1 에 도시된 바와 같이, 소스들 (108, 110 및 116) 은 밸브들 (112, 114 및 118) 을 통해 반응기 (102) 와 유체 연통하며, 밸브들은 공급 라인들 (120-124) 을 사용하여 반응기 (102) 에 대한 각각의 소스 재료들의 흐름, 혼합 및 분배를 제어하기 위해 사용될 수도 있다.
반도체 표면 패시베이션 프로세스 동안, 웨이퍼 또는 워크피스 (105) 는 반응기 (102) 의 챔버 (103) 내에 배치되고, 반응기 (102) 는 진공 펌프 (126) 를 사용하여 원하는 압력 (예컨대, 약 1 내지 약 10 Torr) 이 된다. 소스 (108) 로부터의 황 전구체 재료는 반응기 (102) 의 반응 챔버 (103) 내로 도입된다. 필요에 따라, 황 전구체가 챔버 (103) 에 진입하기 이전에, 소스 (110) 로부터의 캐리어 가스가, 예컨대 가스 분배 시스템 (106) 을 사용하여 황 전구체와 혼합될 수도 있다.
패시베이션 프로세스 조건들은, 예를 들어, 기판 사이즈, 기판 타입, 이전 기판 프로세싱 단계들, 반응기의 타입, 반응기의 사이즈 및 황 전구체를 포함하는 다수의 요인들에 따라 변화될 수도 있다. 이하의 표 1 은 열적 및 플라즈마 패시베이션 프로세스들을 위한 예시적인 프로세스 조건들을 나타낸다.
패시베이션 프로세스의 온도는 워크피스 (105) 의 후속 프로세싱 (예컨대, 고 유전율 재료와 같은 유전체 재료의 성막) 에 사용되는 온도와 동일할 수도 있으며, 이 경우, 패시베이션 프로세스 및 유전체 재료 성막 프로세스는 동일한 반응기/챔버 내에서 일어날 수도 있다. 동일한 반응기 내에서 두 단계들을 수행하는 것은, 진공 조건들을 중단하지 않고 후속 성막이 수행될 수 있기 때문에 유리할 수도 있고; 그리하여 공기 또는 산화 분위기로의 워크피스 (105) 노출이 감소될 수 있다. 그러나, 패시베이션 프로세스는 별개의 챔버 내에서 수행될 수 있으며, 패시베이션 프로세스의 프로세스 온도가 후속 워크피스 (105) 프로세싱에 사용되는 온도와 상이한 경우에 별개의 챔버를 사용하는 것이 바람직할 수도 있다.
이 방법은 또한 패시베이션된 반도체 표면 상에 하이-k 유전체 재료와 같은 유전체 재료를 성막하는 단계를 포함할 수도 있는데, 상기 언급된 바와 같이, 이것은 기상 패시베이션 프로세스와 동일한 반응기 또는 상이한 반응기 내에서 수행될 수 있다. 별개의 반응기들 내에서 수행되는 경우, 반응기들은 동일한 클러스터 툴의 일부일 수도 있고 또는 동일한 클러스터 툴의 일부가 아닐 수도 있다.
패시베이션된 표면 상에 성막될 수도 있는 예시적인 하이-k 재료들은 약 7 보다 더 큰 유전율들 (k 값들) 을 갖는 금속 산화물들의 형태들을 포함한다. 이러한 재료들은 마그네슘 산화물 (MgO), 알루미늄 산화물 (Al2O3), 지르코늄 산화물 (ZrO2), 하프늄 산화물 (HfO2), 하프늄 규소 산화물 (HfSiO), 탄탈 산화물 (Ta2O5), 탄탈 규소 산화물 (TaSiO), 티탄산 바륨 스트론튬 (BST), 탄탈산 스트론튬 비스무트 (SBT), 및 란타나이드 산화물들, 스칸듐 (Sc), 이트륨 (Y), 란탄 (La), 세륨 (Ce), 프라세오디뮴 (Pr), 네오디뮴 (Nd), 사마륨 (Sm), 유로퓸 (Eu), 가돌리늄 (Gd), 테르븀 (Tb), 디스프로슘 (Dy), 홀뮴 (Ho), 에르븀 (Er), 툴륨 (Tm), 이테르븀 (Yb) 및 루테튬 (Lu) 과 같은 물리적으로 안정한 "희토류" 원소들의 산화물들, 그리고 규소 질화물 (SiN) 을 포함한다.
기상 패시베이션 프로세스를 사용하는 것은 습식 용액 패시베이션 프로세스들에 비해서 몇몇 이점들을 가진다. 예를 들어, 유전체 재료의 성막과 패시베이션 사이에서의 공기에 대한 노출은 기상 프로세스를 이용함으로써 상당히 감소되거나 또는 제거 또는 거의 제거될 수 있다. 그 결과, 본 명세서에 기재된 기법들 및 시스템을 이용함으로써 휠씬 더 낮은 Dit 값들을 가지며 그에 따라 보다 양호한 성능을 갖는 디바이스들이 제작될 수 있다.
구체예들
하기의 비제한적인 예들은, 고 이동도 반도체 재료의 표면을 패시베이션하는 프로세스 및 이 프로세스를 이용하여 형성된 디바이스 또는 구조물을 나타낸다. 이들 예들은 단지 설명적이며, 본 개시물이 예들에 한정되는 것으로 의도되는 것은 아니다.
비교예 1
2 인치의 InP 기판 위에 n-도핑된 In0 .53Ga0 .47As 반도체 표면을 에피택셜 성장시켰다. In0 .53Ga0 .47As 표면 상의 자연 산화물을, 실온에서 약 60 초간 희석 HCl 용액 (탈이온수로 10 배 희석된 37% HCl) 을 사용하여 제거하였다. 그 후, 샘플들을 탈이온수로 15 초/린스로 2회 린스하고, 질소 건 (nitrogen gun) 으로 건조하였다. (NH4)2S 용액 내에 워크피스를 침지시킴으로써 그 표면을 패시베이션하였다.
그 후, 패시베이션된 워크피스 표면 상에 전구체들로서 트리메틸알루미늄 (TMA) 및 H20 를 사용하여 ALD Al2O3 층을 성막하였다. Al2O3 층의 두께는 XPS 분석에 대해 약 1 nm 이고 전기적 특징 샘플들에 대해 약 5 nm 이었다. 전기적 특징용으로 사용된 샘플들에 대해, 유전체 재료를 질소 분위기 중의 10% 수소에서 약 5 분간 약 400 ℃ 에서 어닐링하였다.
실시예 1
2 인치의 InP 기판 위에 n-도핑된 In0 .53Ga0 .47As 반도체 표면을 에피택셜 성장시켰다. In0 .53Ga0 .47As 표면 상의 자연 산화물을, 비교예에서 설명된 바와 같은 희석 HCl 용액을 사용하여 제거하였고, 표면이 주변 공기에 노출되는 시간 양을 제어하기 위해, 세정 완료 5 분 내에 반응기 챔버 내에 샘플들을 로딩하였다.
표면을 캐리어 가스 (질소) 와 황 전구체 소스 (22% (NH4)2S 용액 소스) 의 혼합물에 노출시킴으로써 표면을 황으로 패시베이션하였다. 반응기 챔버 온도는 약 300 ℃, 반응 시간은 약 5 분, 챔버 압력은 약 4 Torr 이었다.
그 후, 패시베이션과 유전체 재료 성막 단계들 사이에서 진공을 중단하지 않고, 패시베이션된 워크피스 표면 상에 전구체들로서 TMA 및 H20 를 사용하여 인시튜 (in situ) ALD Al2O3 층을 성막하였다. Al2O3 층의 두께는 XPS 분석에 대해 약 1 nm 이고 전기적 특징 샘플들에 대해 약 5 nm 이었다. 전기적 특징용으로 사용된 샘플들에 대해, 그 후 유전체 재료를 질소 분위기 중의 10% 수소에서 약 5 분간 약 400 ℃ 에서 어닐링하였다.
도 2 는, 수계 침지 패시베이션 프로세스로 처리된 반도체 표면들에 비해서, 인시튜 증기 패시베이션 프로세스를 이용하여 프로세싱된 워크피스들의 반도체 표면들 상에서 더 많은 양의 황이 검출되었음을 나타내는, 샘플들의 XPS 분석을 도시한다.
도 3 의 (a) 내지 (c) 는 실시예 1 의 인시튜 황 증기 처리를 이용하여 In0.53Ga0.47As 상에 성막된 Al2O3 의 1 nm 의 XPS 분석 결과들을 도시한다. 특히, 도 3 의 (a) 는 단일 피크 인듐 3d 를 도시하고; 도 3 의 (b) 는 비소에 대한 단일 피크 3d 를 도시하고; 도 3 의 (c) 는 갈륨에 대한 다수의 XPS 피크들 3p 를 도시하고, 이 모두는 반도체 표면과 유전체 층 사이의 계면에서의 산소의 부족을 나타낸다.
실시예 2
2 인치의 InP 기판 위에 n-도핑된 In0 .53Ga0 .47As 반도체 표면을 에피택셜 성장시켰다. In0 .53Ga0 .47As 표면 상의 자연 산화물을, 실시예 1 에서 설명된 바와 같은 희석 HCl 용액을 사용하여 제거하였다. 표면을 엑스시튜 (ex situ) (NH4)2S 증기에 의해 패시베이션하였다. 그 후 패시베이션된 워크피스 표면 상에 전구체들로서 TMA 및 H2O 를 사용하여 ALD Al2O3 층을 성막하였다. Al2O3 층의 두께는 XPS 분석에 대해 약 1 nm 이고 전기적 특징 샘플들에 대해 약 5 nm 이었다. 전기적 특징용으로 사용된 샘플들에 대해, 그 후 유전체 재료를 질소 분위기 중의 10% 수소에서 약 5 분간 약 400 ℃ 에서 어닐링하였다.
도 4 의 (a) 내지 (d) 는 비교예에 비해서 그리고 패시베이션되지 않은 샘플들에 비해서, 실시예들 1 및 2 에 따라 형성된 디바이스들의 개선된 주파수 분산 캐패시턴스-전압 (C-V) 특징들을 도시한다. C-V 분산 측정들은 트랩 밀도들을 추출하기 위해 실온에서 및 77 K 에서 약 100 Hz 내지 약 1 MHz 의 범위 내의 주파수들에 걸쳐 수행되었다.
표 2 는 비교예와 실시예들 1 및 2 의 프로세스들 그리고 패시베이션을 이용하지 않고 형성된 구조물들/디바이스들의 공핍 및 축적 영역들에서의 캐패시턴스 분산을 나열한다. 모든 패시베이션된 샘플들은 패시베이션되지 않은 샘플들에 비해서 개선된 특성들을 나타낸다. 엑스시튜 증기 패시베이션 처리가 가장 낮은 분산을 나타내는 한편 인시튜 증기 및 용액-기반 패시베이션 처리들이 약간 더 높은 값들을 산출한다 밴드갭을 가로질러 계면 상태를 맵핑하기 위해, CV 곡선들은 77K 까지의 온도에서 발생되었다. 표 3 은 미드갭 (mid gap) 및 전도 밴드 에지에서의 Dit 값들을 나타낸다. 표 3 에 나열된 Dit 값들은, 300 K (미드갭 근방) 내지 77 K (밴드 에지 가까이) 에서 유도 방법을 이용함으로써 추출되었다. 패시베이션된 샘플들의 Dit 값들은 1E12 /cm2eV 정도의 레벨로 감소되어 있다. Dit 의 이들 낮은 값들은 더 양호한 성능을 갖는 고 이동도 트랜지스터 디바이스들을 산출하는 것으로 기대된다.
실시예 3
2 인치의 InP 기판 위에 n-도핑된 In0 .53Ga0 .47As 반도체 표면을 에피택셜 성장시켰다. In0 .53Ga0 .47As 표면 상의 자연 산화물을, 비교예에서 설명된 바와 같은 희석 HCl 용액을 사용하여 제거하였고, 표면이 주변 공기에 노출되는 시간 양을 제어하기 위해, 세정 완료 5 분 내에 반응기 챔버 내에 샘플들을 로딩하였다.
표면을 캐리어 가스 (질소) 와 황 전구체 소스 (22% (NH4)2S 용액 소스) 의 혼합물에 노출시킴으로써 표면을 황으로 패시베이션하였다. 반응기 챔버 온도는 약 300 ℃, 반응 시간은 약 5 분, 챔버 압력은 약 4 Torr 이었다.
그 후, 패시베이션과 유전체 재료 성막 단계들 사이에서 진공을 중단하지 않고서, 패시베이션된 워크피스 표면 상에 전구체들로서 TMA 및 H20 를 사용하여 인시튜 ALD Al2O3 층을 성막하였다. 그 후 HfCl4 및 물을 전구체들로서 사용하여 알루미늄 산화물 층 위에 놓이는 하프늄 산화물의 인시튜 층을 형성하였다. Al2O3 층의 두께는 약 1 nm 이고 하프늄 산화물 층 두께는 약 3 nm 이었다. 샘플들을, 질소 분위기 중의 10% 수소에서 약 5 분간 약 400 ℃ 에서 어닐링하였다.
실시예 4
알루미늄 산화물 및 하프늄 산화물 성막 단계들 이전에 HCl-세정된 표면을 패시베이션하기 위해 질소 캐리어 가스 중의 H2S 를 사용하는 것 이외에는, 실시예 3 에 따라 구조물들을 제작하였다.
이하의 표 4 및 도 5 의 (a) 내지 (c) 는, 알루미늄 산화물 및 하프늄 산화물 성막 이전에 HCl-세정된 표면을 가지며 패시베이션 처리되지 않은 샘플들 그리고 실시예들 3 및 4 에 따라 형성된 샘플들의 전기적 특징들을 도시한다. 도 5 의 (b) 및 (c) 에 도시된 바와 같이, 실시예들 3 및 4 에 따라 형성된 구조물들은, 패시베이션되지 않은 샘플 (도 5 의 (a)) 에 비해서, 개선된 주파수 분산 캐패시턴스-전압 (C-V) 특징을 나타낸다. 상기 기재된 기법들을 이용하여 C-V 분산 측정들을 수행하였고, Dit 값들을 추출하였다. 패시베이션된 샘플들의 Dit 값들은 약 1.8E12 /cm2eV (실시예 3) 및 1.6E12 /cm2eV (실시예 4) 의 레벨로 감소되거나, 또는 패시베이션 단계 없이 유사하게 형성된 구조물들의 Dit 의 약 60 퍼센트 (실시예 3) 및 53 퍼센트 (실시예 4) 로 감소되어 있다. Dit 의 이들 낮은 값들은 더 양호한 성능을 갖는 고 이동도 트랜지스터 디바이스들을 산출하는 것으로 기대된다.
실시예 5
알루미늄 산화물과 하프늄 산화물의 조합 대신에, 알루미늄 산화물 약 4 nm 를 세정된 표면 상에 성막하는 것 이외에는, 실시예 4 의 구조물들을 형성하기 위해 이용된 방법과 유사한 방법을 이용하여 실시예 5 에 따른 구조물들을 제작하였다.
실시예 6
유사하게, 알루미늄 산화물과 하프늄 산화물의 조합 대신에, 알루미늄 산화물 약 4 nm 를 세정된 표면 상에 성막하는 것 이외에는, 실시예 3 의 구조물들을 형성하기 위해 이용된 방법과 유사한 방법을 이용하여 실시예 6 에 따른 구조물들을 제작하였다.
이하의 표 5 및 도 6 의 (a) 내지 (c) 는, 알루미늄 산화물 성막 이전에 HCl-세정된 표면을 가지며 패시베이션 처리되지 않은 구조물들 그리고 실시예들 5 및 6 에 따라 형성된 구조물들의 전기적 특징들을 도시한다. 도 6 의 (b) 및 (c) 에 도시된 바와 같이, 실시예들 5 및 6 에 따라 형성된 구조물들은, 패시베이션되지 않은 샘플 (도 6 의 (a)) 에 비해서, 개선된 주파수 분산 캐패시턴스-전압 (C-V) 특징을 나타낸다. 상기 기재된 기법들을 이용하여 C-V 분산 측정들을 수행하였고, Dit 값들을 획득하였다. 표 5 는 미드갭에서의 Dit 값들이 상당히 감소되었음을 나타낸다. Dit 값들은, 실시예 5 및 실시예 6 양자에 따라 형성된 구조물들에 대해 약 6.0E11/cm2eV 의 레벨로 감소되거나, 또는 패시베이션 단계 없이 유사하게 형성된 구조물들의 Dit 값의 약 20 퍼센트로 감소되어 있다. Dit 의 이들 낮은 값들은 더 양호한 성능을 갖는 고 이동도 트랜지스터 디바이스들을 산출하는 것으로 기대된다.
본 개시물의 예시적인 실시형태들이 본 명세서에 설명되지만, 본 개시물이 거기에 한정되지 않음을 이해해야 한다. 예를 들어, 다양한 프로세스 파라미터들과 관련하여 시스템들, 방법들, 디바이스들 및 구조물들이 기재되지만, 본 개시물은 거기에 한정되지 않는다. 이하의 청구항들 및 그들의 등가물들에 설명되는 바와 같은 본 개시물의 사상 및 범위로부터 일탈하지 않는 한 본 명세서에 설명된 시스템 및 방법의 다양한 변형들, 변경들 및 개량들이 이루어질 수도 있다.
Claims (20)
- 반도체의 표면을 패시베이션하는 방법으로서,
상기 반도체의 표면을 반응기의 반응 챔버에 제공하는 단계;
상기 반응 챔버 내에서 기상 황 전구체에 상기 반도체의 표면을 노출시키는 단계; 및
패시베이션된 반도체 표면을 형성하기 위해 상기 기상 황 전구체를 사용하여 상기 반응 챔버 내에서 상기 반도체의 표면을 패시베이션하는 단계를 포함하고,
상기 패시베이션하는 단계 동안 상기 반응 챔버 내의 압력이 0.5 Torr 와 750 Torr 사이이고,
상기 황 전구체에 대한 소스는 NH4HS 를 포함하는, 반도체 표면 패시베이션 방법. - 삭제
- 제 1 항에 있어서,
상기 패시베이션된 반도체 표면 상에 유전체 재료를 성막하는 단계를 더 포함하는, 반도체 표면 패시베이션 방법. - 제 3 항에 있어서,
상기 유전체 재료를 성막하는 단계 및 상기 기상 황 전구체에 상기 반도체의 표면을 노출시키는 단계는 동일한 온도에서 수행되는, 반도체 표면 패시베이션 방법. - 제 3 항에 있어서,
상기 유전체 재료를 성막하는 단계 및 상기 기상 황 전구체에 상기 반도체의 표면을 노출시키는 단계는 별개의 반응기들 내에서 수행되는, 반도체 표면 패시베이션 방법. - 제 3 항에 있어서,
상기 유전체 재료를 성막하는 단계는 알루미늄 산화물을 성막하는 단계를 포함하는, 반도체 표면 패시베이션 방법. - 제 1 항에 있어서,
상기 반도체는 게르마늄 및 III-V 반도체 재료들로 이루어진 그룹으로부터 선택되는 고 이동도 (high-mobility) 반도체인, 반도체 표면 패시베이션 방법. - 제 1 항에 있어서,
상기 기상 황 전구체에 상기 반도체의 표면을 노출시키는 단계 이전에, 인시튜 (in-situ) 기상 프로세스를 이용하여, 상기 반도체의 표면을 세정하는 단계를 더 포함하는, 반도체 표면 패시베이션 방법. - 제 1 항에 있어서,
상기 반도체의 표면을 노출시키는 단계는, 상기 반도체의 표면을 플라즈마 프로세스에 노출시키는 단계를 포함하는, 반도체 표면 패시베이션 방법. - 제 1 항에 있어서,
상기 반도체의 표면을 반응기의 반응 챔버에 제공하는 단계는, 원자층 증착 반응기 내부에 상기 표면을 제공하는 단계를 포함하는, 반도체 표면 패시베이션 방법. - 제 1 항에 있어서,
캐리어 가스를 제공하는 단계, 및 상기 캐리어 가스와 상기 기상 황 전구체를 혼합하는 단계를 더 포함하는, 반도체 표면 패시베이션 방법. - 반도체의 표면을 패시베이션하기 위한 시스템으로서,
반응기; 및
상기 반응기에 유체 커플링된 NH4HS 를 포함하는 황 전구체 소스를 포함하고,
상기 황 전구체 소스는 기상 황 전구체를 상기 반응기의 반응 챔버에 제공하고,
상기 반응 챔버 내의 압력이 0.5 Torr 와 750 Torr 사이인, 반도체 표면 패시베이션 시스템. - 삭제
- 제 12 항에 있어서,
상기 반응기에 유체 커플링된 세정 소스를 더 포함하는, 반도체 표면 패시베이션 시스템. - 제 14 항에 있어서,
상기 세정 소스는 H2 및 수소 플라즈마로 이루어진 그룹으로부터 선택되는, 반도체 표면 패시베이션 시스템. - 제 12 항에 있어서,
상기 반응기는 원자층 증착 반응기를 포함하는, 반도체 표면 패시베이션 시스템. - 제 12 항에 있어서,
플라즈마 장치를 더 포함하는, 반도체 표면 패시베이션 시스템. - 삭제
- 삭제
- 삭제
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