CN109155251B - 用于改良的半导体蚀刻及部件保护的系统与方法 - Google Patents

用于改良的半导体蚀刻及部件保护的系统与方法 Download PDF

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CN109155251B
CN109155251B CN201780030527.0A CN201780030527A CN109155251B CN 109155251 B CN109155251 B CN 109155251B CN 201780030527 A CN201780030527 A CN 201780030527A CN 109155251 B CN109155251 B CN 109155251B
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陈天发
L·K·罗
D·卢博米尔斯基
S·郑
M·Y·崔
S·朴
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Abstract

半导体系统及方法可包括具有气箱的半导体处理腔室，此气箱提供至所述半导体处理腔室的入口。所述腔室可包括第一环形支撑件，在第一环形支撑件的第一表面处接触气箱，其中第一环形支撑件和气箱各自界定第一通道的一部分，第一通道位于气箱与第一环形支撑件的界面处；以及第一气体分配板，安装在第一通道内。腔室还可包括第二环形支撑件，在第一环形支撑件的第二表面处接触第一环形支撑件，第一环形支撑件的第二表面在第一环形支撑件的第一表面的对面，其中第二环形支撑件至少部分地界定第二通道，第二通道位于半导体处理腔室的内部区域周围；以及第二气体分配板，安装在第二通道内，其中第一气体分配板和第二气体分配板包含石英。

Description

用于改良的半导体蚀刻及部件保护的系统与方法
技术领域
本技术关于用于蚀刻半导体材料的系统及方法。更特定言之，本技术关于用于具有腔室部件的改良的退化特性的蚀刻的腔室及方法。
背景技术
集成电路可能通过工艺而制造，这些工艺复杂地在基板表面上产生图案化的材料层。在基板上产生图案化的材料需要用于去除暴露材料的受控制方法。化学蚀刻用于各种目的，包括：将光刻胶中的图案转移进下层、薄化层，或薄化已存在于表面上的特征的横向尺寸。通常，期望的是具有蚀刻一种材料快于另一种材料以促进例如图案转移工艺的蚀刻工艺。称这种蚀刻工艺为对第一种材料有选择性。由于材料、电路及工艺的多样性，蚀刻工艺已经发展成对于各种材料具有选择性。
蚀刻工艺基于在工艺中使用的材料可称为湿式或干式。湿式HF蚀刻优先于其他电介质及材料去除氧化硅。然而，湿式工艺可能难以穿透一些受限沟槽且亦可能有时使剩余材料变形。在形成于基板处理区域内的局部等离子体中产生的干式蚀刻可穿透更受限的沟道及展现精巧剩余结构的更少变形。然而，局部等离子体可能因为放电而经由电弧的产生而损害基板。另外，等离子体流出物可损害腔室部件，可能需要对其替换或处理。
因此，需要可用以产生高质量装置及结构的改良的系统及方法。这些及其他需求通过本技术来解决。
发明内容
半导体系统及方法可包括具有气箱的半导体处理腔室，此气箱界定至半导体处理腔室的入口。腔室可包括间隔件，该间隔件由与气箱耦接的第一表面表征，及此间隔件可界定在第一表面的内部部分上的凹进壁架。腔室可包括支架，该支架安装在凹进壁架上，该凹进壁架沿间隔件的第二表面延伸。腔室还可包括气体分配板，该气体分配板安装在支架上。
示例性腔室还可包括环形衬垫，该环形衬垫接触气体分配板并绕支架的表面延伸。腔室可包括顶板，该顶板安装在环形衬垫上及定位成靠近气箱的表面。在实施例中，气体分配板、环形衬垫及顶板可以是或包括石英、陶瓷或经涂覆铝。支架及间隔件可至少部分地包含硬阳极化铝或经涂覆铝。腔室还可包括台座，该台座经配置以支撑半导体基板，及此台座可包括陶瓷加热器，此陶瓷加热器经配置以将半导体基板加热至约300℃与500℃之间。
在实施例中，输送管可在气箱入口处将半导体处理腔室与远程等离子体源耦接在一起，及此输送管可包括石英内表面。石英内表面可包括设置在铝输送管内的石英衬垫。输送管还可包括配接器，该配接器将输送管与远程等离子体源单元耦接在一起，及此配接器可包括靠近输送管的薄垫片。
本技术还可包括半导体处理系统，此半导体处理系统可包括远程等离子体源以及与远程等离子体源耦接的输送管。系统可包括可具有气箱的半导体处理腔室，此气箱界定至半导体腔室的入口。在实施例中，入口可位于气箱内的中心位置，及输送管可在入口处与气箱耦接。腔室还可包括间隔件，该间隔件由与气箱耦接的第一表面表征，及此间隔件可界定在第一表面的内部部分上的凹进壁架。腔室可包括支架，该支架安装在凹进壁架上并沿间隔件的第二表面延伸。气箱的一部分可至少部分地平行于间隔件的第二表面延伸，及支架可至少部分地定位在间隔件的第二表面与气箱的至少部分地平行于间隔件的第二表面延伸的该部分之间。腔室还可包括气体分配板，该气体分配板安装在支架上。
系统还可在腔室内包括环形衬垫，该环形衬垫接触气体分配板并绕支架的内表面延伸。腔室可包括顶板，该顶板安装在环形衬垫上及定位成靠近气箱的表面。气箱的该部分可包括气箱的凹进部分的表面，及此气箱的凹进部分可定位成与支架的沿间隔件的第二表面延伸的部分相邻。在实施例中，气体分配板、环形衬垫及顶板可以是或包括石英、陶瓷或经涂覆铝。
在实施例中，顶板可在由气箱界定的入口的外径内延伸，及可接触输送管或接触定位在输送管的出口处的配接器。支架及间隔件可至少部分地是或包括硬阳极化铝或经涂覆铝。腔室还可包括台座，该台座经配置以支撑半导体基板，及此台座可包括或是陶瓷加热器，此陶瓷加热器经配置以将半导体基板加热至约300℃与500℃之间。在实施例中，输送管可以是或包括石英内表面。另外，气体分配板可包括孔的一或多个环，这些孔自气体分配板的中心轴径向向外地延伸。
本技术还可包括在半导体处理腔室中蚀刻基板的方法。方法可包括将含氯前驱物输送至远程等离子体源同时生成等离子体以产生等离子体流出物。方法可包括使等离子体流出物经由石英气体分配板流入半导体处理腔室中。方法还可包括在约300℃与约500℃之间的温度下蚀刻基板。
本技术还可包括具有远程等离子体源的半导体处理系统。系统可包括输送管，该输送管与远程等离子体源耦接。系统还可包括半导体处理腔室，及半导体处理腔室可包括气箱，该气箱耦接在输送管的远端区域周围。腔室可包括第一环形支撑件，该第一环形支撑件在第一环形支撑件的第一表面处接触气箱，及此第一环形支撑件及气箱可一起界定第一通道，该第一通道在半导体处理腔室的内部区域周围。腔室还可包括气体分配板，该气体分配板安装在第一通道内。
处理腔室还可包括环形衬垫，该环形衬垫安装在气体分配板上。腔室可包括顶板，该顶板安装在环形衬垫上，以及环形衬垫和顶板两者均可至少部分地安装在第一通道内。腔室可包括第二环形支撑件，该第二环形支撑件在第一环形支撑件的第二表面处接触第一环形支撑件，此第一环形支撑件的第二表面在第一环形支撑件的第一表面的对面。第二环形支撑件及第一环形支撑件可一起界定第二通道，该第二通道在半导体处理腔室的内部区域周围。腔室还可包括第二气体分配板，第二气体分配板安装在第二通道内。在实施例中，第一气体分配板及第二气体分配板可各自为石英、陶瓷或经涂覆铝中的一者或包括石英、陶瓷或经涂覆铝。
处理腔室还可包括至少一个销，该至少一个销可拆卸地将气体分配板与第一环形支撑件耦接在一起。输送管可界定在远程等离子体单元与气箱之间的通道的至少一部分，此气箱经配置以允许前驱物经由输送管输送进半导体处理腔室中，该前驱物绕过远程等离子体源。腔室还可包括插入件，该插入件定位在输送管内，及此插入件可提供自远程等离子体源及输送管的通道的至少一部分至插入件的混合区的入口。在实施例中，插入件的混合区可包括第一混合段，此第一混合段由自入口至插入件的混合区逐渐变细的形状表征，及插入件的混合区可包括第二混合段，此第二混合段由自靠近第一混合段的位置至输送管的出口的扩展的内径表征。
在实施例中，插入件的混合区进一步可包括第三混合段，此第三混合段由内径小于输送管的内径一半的圆柱形状表征。另外，气箱可包括彼此耦接的第一气箱板及第二气箱板。第二气箱板可沿第二气箱板的第二表面至少部分地接触第一环形支撑件，此第二气箱板的第二表面在第二气箱板的第一表面对面，此第二气箱板的第一表面接触第一气箱板。此外，第二气箱板可界定多个通道，及耦接的第一气箱板与第二气箱板可界定穿过该多个通道的流动路径。在实施例中，第一气箱板可界定端口，此端口提供了至多个通道中的一通道的入口。第二气箱板可界定至少一个进入通道，此至少一个进入通道提供了自多个通道至半导体处理腔室的内部区域的入口，及此至少一个进入通道可从由第一气箱板界定的端口径向向外地定位。
本技术还可包括具有气箱的半导体处理腔室，此气箱提供了至半导体处理腔室的入口。腔室可包括第一环形支撑件，第一环形支撑件在该第一环形支撑件的第一表面处接触气箱，及此第一环形支撑件及气箱可各自界定第一通道的一部分，第一通道位于气箱与第一环形支撑件的界面处。腔室可包括第一气体分配板，第一气体分配板安装在第一通道内。另外，腔室可包括第二环形支撑件，第二环形支撑件在第一环形支撑件的第二表面处接触第一环形支撑件，此第一环形支撑件的第二表面在第一环形支撑件的第一表面的对面。第二环形支撑件可至少部分地界定第二通道，第二通道位于半导体处理腔室的内部区域周围。腔室还可包括第二气体分配板，第二气体分配板安装在第二通道内，及在实施例中第一气体分配板及第二气体分配板可以是或可包括石英。
处理腔室还可包括环形衬垫，该环形衬垫安装在第一气体分配板上。腔室可包括顶板，该顶板安装在环形衬垫上，以及环形衬垫和顶板两者均可至少部分地安装在第一通道内。在实施例中，第一气体分配板及第二气体分配板可以由类似形状表征及可各自界定多个孔，这些多个孔位于绕气体分配板的环中。另外，气箱可包括彼此耦接的第一气箱板及第二气箱板。第二气箱板可沿第二气箱板的第二表面至少部分地接触第一环形支撑件，此第二气箱板的第二表面在第二气箱板的第一表面对面，此第二气箱板的第一表面接触第一气箱板。第二气箱板可界定多个通道，及耦接的第一气箱板与第二气箱板可界定穿过该多个通道的流动路径。在实施例中，第一气箱板可界定端口，此端口提供至多个通道中的一通道的入口。另外，第二气箱板可界定至少一个进入通道，此至少一个进入通道提供自多个通道至半导体处理腔室的内部区域的入口。在实施例中，该至少一个进入通道可从由第一气箱板界定的端口径向向外地定位。
这种技术可提供超过常规技术的众多益处。例如，此技术可允许受等离子体前驱物影响的腔室部件的改良保护。另外，本技术可允许基于腔室设计的改良部件替换及出入。结合下文的描述及附图更详细地描述了这些及其他实施例连同其许多优势及特征。
附图说明
参考本说明书的剩余部分及附图可实现对所公开实施例的特性及优势的进一步理解。
图1图示示例性处理系统的一个实施例的俯视平面图。
图2图示根据本技术的实施例的示例性处理系统的示意横截面图。
图3图示根据本技术的实施例的示例性处理腔室的一部分的示意横截面图。
图4图示根据本技术的实施例的示例性处理腔室的输送系统的示意横截面图。
图5A图示根据本技术的实施例的示例性气体分配板的俯视平面图。
图5B图示根据本技术的实施例的示例性气体分配板的俯视平面图。
图6图示根据本技术的实施例的示例性处理腔室的一部分的部分示意横截面图。
图7图示根据本技术的实施例的示例性气体分配板的横截面平面图。
图8图示根据本技术的实施例的示例性处理腔室的一部分的示意横截面图。
图9图示根据本技术的实施例的示例性气箱布置的横截面平面图。
图10图示根据本技术的实施例的示例性气箱布置的一部分的横截面图。
图11图示根据本技术的实施例的蚀刻基板的方法。
在附图中，类似部件和/或特征可具有相同组件符号。另外，可以通过组件符号后加上在相似部件和/或特征之间进行区分的字母来区分相同类型的各种部件。如果在本说明书中只使用第一组件符号，则描述适用于具有该相同的第一组件符号的类似部件和/或特征的任一者，而不管字母后缀如何。
具体实施方式
在半导体处理中，可由于许多原因执行蚀刻。在干式蚀刻中，前驱物可流动穿过等离子体以产生用于蚀刻各种半导体材料的自由基等离子体流出物。这些前驱物可包括一或多种腐蚀元素，这些一或多种腐蚀元素包括氟、氯或任一其他化学元素。这些元素不但暴露于要蚀刻的基板或材料，而且暴露于在其中执行处理的腔室部件。因此，腔室的暴露表面可被等离子体或等离子体产生的流出物蚀刻、溅射或以其他方式劣化。劣化的程度可与在腔室部件与用于蚀刻的前驱物之间的反应性有关。
常规技术通常通过在腔室内提供可替换部件来处理此劣化。因此，当涂层或部件本身劣化时，此部件可被去除并使用将来亦会随时间推移劣化的新部件来替换。此劣化及替换不但耗费处理时间及金钱，而且此劣化本身可能影响正在执行的工艺。例如，当部件或涂层正在劣化时，来自受影响的部件及涂层的颗粒可沉积在正被加工的基板上。这可引起包括部件的短路以及不均匀处理在内的生产问题。
许多半导体腔室部件可由铝制成。当在处理中使用氯基前驱物时，氯以及氯自由基是腐蚀性的且可很快地损害暴露的铝腔室部件。用于减少腐蚀的一个机制为涂覆暴露的铝件。然而，涂覆任一暴露材料可以是昂贵的、有瑕疵的，并可因材料随着时间推移劣化而引入污垢。因此，涂覆越多材料，具有涂覆问题的机率越高。
本技术使用腔室内的替代部件来减少蚀刻剂对腔室的影响。在实施例中，通过从腔室去除等离子体生成，亦可减少对腔室部件的轰击损伤。尽管本公开例行地使用所公开的技术识别特定蚀刻工艺，但不难理解，该等系统及方法同样地适用于沉积及清洁工艺(当其在描述的腔室中发生时)。因而，本技术不应被认为受限于只用于蚀刻工艺。
图1图示根据所公开的实施例的沉积、蚀刻、烘烤及固化腔室的处理系统100的一个实施例的俯视平面图。在图中，一对前开式标准舱(front opening unified pod；FOUP)102供应各种大小的基板，此各种大小的基板由机械臂104接收并被置于低压固持区106中，随后置于基板处理腔室108a-f的一者中，该等基板处理腔室定位在串联区域109a-c中。第二机械臂110可用以将基板晶片自固持区106传送至基板处理腔室108a-f以及返回。每个基板处理腔室108a-f可经配备以执行多个基板处理操作，此多个基板处理操作包括本文描述的蚀刻工艺，还包括循环层沉积(cyclical layer deposition；CLD)、原子层沉积(atomiclayer deposition；ALD)、化学气相沉积(chemical vapor deposition；CVD)、物理气相沉积(physical vapor deposition；PVD)、蚀刻、预清洁、脱气、定向及其他基板工艺。
基板处理腔室108a-f可包括用于在基板晶片上沉积、退火、固化和/或蚀刻电介质膜的一或多个系统部件。在一个配置中，两对处理腔室，例如108c-d及108e-f，可用以在基板上沉积电介质材料，而第三对处理腔室，例如108a-b，可用以蚀刻所沉积的电介质。在另一配置中，全部三对腔室，例如108a-f，可经配置以蚀刻基板上的材料。下文描述的工艺的任意一或多个可在腔室中进行，所述腔室与在不同实施例中图示的制造系统分隔。应理解，系统100可设想用于电介质膜的沉积、蚀刻、退火及固化腔室的额外配置。下文描述的腔室的任一者可用在处理系统100中，及可作为串联腔室被包含，其可包括共享前驱物、环境或控制特征的两个类似腔室。
图2图示根据本技术的实施例的示例性处理系统200的示意横截面图。系统可包括处理腔室205及远程等离子体源(remote plasma source；“RPS”)单元210。RPS单元210可稳定在具有支撑构件214的平台212上，支撑构件214可在绕处理腔室205的一或多个位置处与处理腔室205耦接。通过利用额外支撑构件214连同平台212，RPS单元210的重量可适当地经分配以保护部件免受干扰或与RPS单元210的重量相关的其他应力。输送管216可耦接在RPS单元210与处理腔室205之间或与RPS单元210和处理腔室205耦接以用于将一或多种前驱物输送至处理腔室205。凸缘配接器218可绕输送管216定位以提供对RPS单元210的额外稳定性及支撑，不然可能因支撑重量损害输送管216。凸缘配接器218可接触平台212以提供对RPS单元210的支撑，另外以便RPS单元210的重量不承载在输送管216上。
处理腔室205可包括气箱220，气箱220提供至处理腔室205的入口。气箱220可界定至处理腔室205的入口，及在实施例中，入口可被界定或位于气箱220内的中心位置。输送管216可定位或耦接在气箱220的入口内，从而在RPS单元210与处理腔室205内部之间提供前驱物路径。凸缘配接器218亦可接触顶板220以分配RPS单元210的至少一部分的重量，从而防止或减小输送管216上的应力。
在实施例中，间隔件222可至少部分地界定处理腔室205的外壁及内壁。气体分配组件225可定位在处理腔室205内，靠近输送管216，及气体分配组件225可允许将前驱物或等离子体流出物分配进处理腔室205中。泵送衬垫230可定位在处理腔室205的处理区域内。泵送衬垫230可允许未反应的前驱物或等离子体流出物自处理腔室205排出。泵送衬垫230可另外允许在蚀刻工艺中蚀刻的颗粒自处理腔室205去除以防止颗粒在后续处理操作期间停留在基板上。
台座235可被包括在处理腔室205的处理区域中及可经配置以在蚀刻或其他工艺操作期间支撑基板。例如，台座235可在包括静电的、真空的或重力的各种实施例中具有一或多个卡紧机构。台座235在实施例中可旋转或可平移，及可朝气体分配组件225升高或自气体分配组件225降低。在实施例中，台座235可包括一或多个升降杆以用于协助将基板转移进及转移出处理腔室205。台座235可另外包括用于在处理操作期间维持基板温度的加热或冷却机构。
台座235可包括嵌入式加热元件(包括细丝(filament))，或可包括经配置以输送温度受控流体的一或多个管或通道，此温度受控流体可相应地升高或降低温度。台座235可包括用于支撑基板的平台，此基板是或包括陶瓷加热器。在实施例中，陶瓷加热器可加热基板至包括自约20℃至超过1000℃的特定工作温度。在实施例中，陶瓷加热器可另外将基板加热至约50℃以上、约100℃以上、约150℃以上、约200℃以上、约250℃以上、约300℃以上、约350℃以上、约400℃以上、约500℃以上或更高。在实施例中，陶瓷加热器可另外维持基板温度在约1000℃以下、在约900℃以下、在约800℃以下、在约700℃以下、在约600℃以下、或在约500℃以下。在实施例中，陶瓷加热器可另外经配置以加热或维持基板温度在约100℃与约500℃之间，或在实施例中，在约300℃与约500℃之间。在实施例中，加热器经配置以维持基板温度在约300℃以下，在此情况下替代的金属加热元件可代替陶瓷加热器使用。例如，可使用经涂覆铝加热器，或在铝或经处理铝的台座上的嵌入的或涂覆的加热器。
处理腔室205的部件可经配置以在蚀刻或其他处理操作期间耐受操作环境。处理腔室205的部件可以是阳极化或氧化材料，例如包括硬阳极化铝。在处理腔室205内的可与等离子体流出物或其他腐蚀性材料接触的每个部件可经处理或涂覆以防止腐蚀。在实施例中，亦可利用替代材料来防止包括氟或氯的等离子体流出物的腐蚀。例如，处理腔室205内的一或多个部件在实施例中可以是陶瓷或石英。作为特定示例，气体分配组件225、间隔件222、泵送衬垫230、或可与等离子体或非等离子体前驱物接触的任一部件中的一或多个部件可以是或可包括石英或陶瓷。另外，输送管216可以是或可包括石英，诸如包括输送管216内的石英衬垫。输送管在实施例中可以是铝或硬阳极化铝，及可由石英内表面表征。RPS单元210亦可内衬石英以防止内部部件受到腐蚀，此腐蚀例如由在包括或氯的RPS单元210内解离的前驱物引起。RPS单元210可包括阳极化金属，及RPS单元210腔室空腔可内衬石英以进一步防止腐蚀。
通过利用来自RPS单元210的远程等离子体，处理腔室205可进一步防止由等离子体生成而引起的内部腐蚀。在实施例中，处理腔室205可不配置成产生等离子体，且可在RPS单元210中的处理腔室205外部执行等离子体生成。在实施例中，可在处理腔室205内执行额外等离子体处理，诸如通过电容耦合等离子体，尽管可使用其他等离子体源。例如，气箱220及气体分配组件225的一或多个部件可用作电极，通过其可产生电容耦合等离子体。可使用腔室内的额外或替代等离子体部件来通过减小自等离子体生成的路径长度帮助等离子体流出物的重新组合以与基板互相作用。
通过等离子体解离的前驱物在某一停留时间之后将重新组合。例如，在氯基前驱物在RPS单元210内解离之后，前驱物或等离子体流出物可经由输送管216流进处理腔室205中，随后与台座235上的基板相互作用。取决于用于自由基流出物的行进路径的长度，流出物或自由基可重新组合并至少部分地损失自由基前驱物的反应性。另外，行进路径越复杂，诸如穿过各种管或通道，更多保护可被包含入系统中，因为与等离子体流出物接触的每个部件可经处理或涂覆以防腐蚀。因此，处理腔室205可包括自RPS单元210到处理腔室205中且随后穿过排放室230的相对直线的行进。另外，一旦在处理腔室205内，前驱物或等离子体流出物可行进穿过气体分配组件225的一或多个内联方面(inline aspect)以接触基板。气体分配组件225的部件可用以改进朝向基板的流动的均匀性，但另外维持前驱物流动路径的减小的长度，以减少等离子体流出物的重新组合以及在处理腔室205内的停留时间。
参看图3，图3图示根据本技术的实施例的示例性处理腔室205的一部分的示意横截面图。图3包括图2的气体分配组件225的部件的局部视图，且可包括如上所述的类似部件。例如，如图3中图示的处理腔室205可包括输送管216、凸缘配接器218、气箱220及间隔件222。如额外细节所示，间隔件222可以由与气箱220耦接的第一表面321表征。间隔件222可在实施例中界定在第一表面321的内部部分上的凹进壁架323。例如，内部部分可以是相对于部件或相对于腔室径向朝处理腔室205的中心轴定位的部分，或可以是面向处理腔室205的内部的部分。如在图中图示，凹进壁架323可形成于间隔件222的第一表面321的朝向处理腔室205的内部的侧面上，及可位于气箱220的耦接位置附近。气箱220可在实施例中至少部分地覆盖凹进壁架323，及可完全地覆盖凹进壁架323。
支架305可安装在间隔件222的凹进壁架323上。支架305可沿间隔件222的第二表面324延伸。间隔件222的第二表面324可面向处理腔室205的内部，及在实施例中为间隔件222的与第一表面321相邻的表面。支架305可沿间隔件222的第二表面324在与凹进壁架323成约或基本上直角处延伸。支架305可以取决于定向而表征为S或Z形以提供支撑架307，此支撑架307自支架305延伸进处理腔室205中。支架305可具有环形形状并在绕处理腔室205的内部延伸。垫圈或O型环309可定位为与支架305相邻，及可在处理腔室205配置中自支架305径向向外。垫圈309可定位在气箱220与间隔件222之间以提供在部件及支架305周围的液封。当气箱220与间隔件222耦接时，可压缩垫圈或O型环309以在部件之间形成密封。
如进一步图示，气箱220的一部分亦可延伸超出与气箱220耦接的间隔件222的第一表面321，及可能至少部分地平行于间隔件222的第二表面324、或支架305延伸。如图所示，气箱220的一部分跨间隔件222的第一表面321的平面，此间隔件222的第一表面321的平面在处理腔室205内平行于间隔件222的第二表面324延伸。气箱220的此部分可以是在处理腔室205内的气箱220的凹进部分，及气箱220的凹进部分可定位为与沿间隔件222的第二表面324延伸的支架305的一部分相邻。在实施例中，气箱220可能不完全平行延伸，及亦可以一定角度朝向或远离间隔件222的第二表面324延伸。支架305可至少部分地定位在间隔件222的第二表面324与气箱220的一部分之间，此气箱220的该部分至少部分地平行于间隔件222的第二表面324延伸。支架305可在实施例中在间隔件222与气箱220之间分隔，或可直接接触间隔件220的第二表面324、或气箱220的至少部分地平行于间隔件220的第二表面324延伸的一部分中的一或两者。
气体分配板310可安装在支架305上，此气体分配板310经配置以将均匀流动的前驱物或等离子体流出物提供进处理腔室205的处理区域中以用于与基板相互作用。在实施例中，气体分配板310可安装在支架305上而无附加耦接材料，及可直接安装在支撑架307上。环形衬垫312可安装或定位在气体分配板310上及可绕处理腔室205的内部延伸以覆盖原本暴露区域或支架305的内表面。
顶板314可定位或安装在环形衬垫312上，及靠近面向处理腔室205的内部的气箱表面定位。顶板314可绕输送管216的出口延伸及可直接接触输送管216的出口，以减少或防止前驱物或等离子体流出物流动接触气箱220的面向腔室的内部的表面。另外，顶板314可穿过或在由气箱220界定的入口之外径内延伸，及可直接接触或可不直接接触输送管216或定位在输送管216的出口处的配接器。在实施例中，缝隙可存在于顶板314与气箱220之间，或顶板314可齐平并直接接触气箱220。在实施例中，缝隙可少于5cm，及可等于或少于约4cm、3cm、2cm、1cm、0.5cm、0.1cm或0cm，在此情况下顶板314直接接触气箱220。顶板314可以是在输送管216接触或遇到顶板314的位置处界定孔的平板。顶板314可另外为实心设计以防止气箱220暴露于前驱物或等离子体流出物。
气体分配板310、环形衬垫312及顶板314的一或多个可组成图2的气体分配组件225。这些部件的每个可经涂覆或设计成惰性的或具有来自等离子体流出物及前驱物的减少的影响。例如，气体分配板310、环形衬垫312及顶板314可每个在实施例中由石英制成或包括石英，或可由不起反应的或具有对包括氟或氯的腐蚀性材料减小的反应性的材料制成或涂覆。例如，气体分配板310、环形衬垫312或顶板314的任一者可以是陶瓷，或可经涂覆或阳极化铝。尽管气体分配板310可均匀地将前驱物或等离子体流出物自输送管216分散进处理腔室205的处理区域中，环形衬垫312及顶板314可用以保护处理腔室内的额外部件。例如，当前驱物或等离子体流出物自输送管216分配时，前驱物可在气体分配组件225内径向向外地流动及至少部分地充填气体分配组件225的空腔，该空腔界定在气体分配板310、环形衬垫312与顶板314之间。环形衬垫312及顶板314可在反应前驱物或等离子体流出物经由气体分配板310分配或流动之前，防止反应前驱物或等离子体流出物接触气箱220及支架312。
一旦前驱物经由气体分配板310分配，则流动可至少部分地接触支架305或间隔件222。可基于穿过腔室的增压流或真空流最小化这种接触。因此，在输送管216与气体分配板310之间的处理腔室205的区域可以是其中前驱物在腔室内的停留时间长于在前驱物流过气体分配板310之后的停留时间的位置。通过分别用环形衬垫312及顶板314覆盖处理腔室205的原本暴露部分，此原本暴露部分包括支架305及气箱310的面向内部的表面。可改进腔室部件使用寿命，其可减少在处理腔室205的使用寿命期间的替换成本。间隔件222及支架305的至少部分可以是铝及可在前驱物或等离子体流出物经由气体分配板310分配或流动之后被前驱物或等离子体流出物接触。间隔件222及支架305，或这些部件的至少暴露表面，因而可经涂覆或可由诸如硬阳极化铝的材料组成以减少它们的劣化。另外这些材料亦可由石英、陶瓷或其他非反应或反应性较低材料组成或包括石英、陶瓷或其他非反应或反应性较低材料。
图4图示了根据本技术的实施例的示例性处理腔室的输送系统400的示意横截面图。图4可包括如先前在图2及图3中图示的部件，且可包括例如RPS单元210、平台212、输送管216、凸缘配接器218、气箱220及顶板314。如图图示，输送管216可在通过气箱220界定的入口处将处理腔室205与RPS单元210耦接。由于暴露于可以是腐蚀性的等离子体流出物，输送管216可由诸如硬阳极化铝或经涂覆铝之类的涂覆或保护材料组成或包括诸如硬阳极化铝或经涂覆铝之类的涂覆或保护材料。在实施例中，输送管216亦可包括沿输送管216的内部的诸如石英衬垫之类的衬垫，此输送管216的内部可能暴露于等离子体流出物。
一或多个垫圈或O型环405a-c可被包括在诸如RPS单元210及平台212、平台212及凸缘配接器218，以及凸缘配接器218及气箱220之类的部件之间。在实施例中可包括配接器410以将输送管216与RPS单元210耦接。配接器410可至少部分地为石英，且可包括凸缘或薄垫片。配接器410的凸缘或薄垫片可允许在RPS单元210与输送管216之间的改良密封，以防止包括O型环或垫圈405a的部件由等离子体流出物接触，等离子体流出物可腐蚀O型环或垫圈405a、RPS单元210或平台212。凸缘或薄垫片在实施例中可以是箔O型环或在部件之间提供密封的另一材料，且其亦可对前驱物或等离子体流出物的腐蚀是惰性的或防止该腐蚀，诸如用涂层、保护层或材料选择来防腐蚀。输送管216亦可包括与输送管216的出口耦接的配接器415。在实施例中，配接器415可与气箱220或顶板314耦接。在实施例中，配接器415可以是顶板314的适配，顶板314可经变形、逐渐变细、凸缘连接或另外经调节以减少或防止气箱220暴露于前驱物或等离子体流出物，此前驱物或等离子体流出物经由输送管216输送。
图5A至图5B图示根据本技术的实施例的气体分配板310的示例性结构。如在图5A中图示，气体分配板310a可包括自气体分配板310a的中心轴径向向外地延伸的孔的一或多个环。环可包括任意数目的孔，其可经组合或分隔以调整穿过气体分配板310a的流量。如图所示，气体分配板310a包括孔的四个环，其中每个径向向外的环包括由大于更内部环的直径的孔。在实施例中，可对环数目以及孔的尺寸及形状两者进行调整。例如，气体分配板可具有2个、3个、4个、5个、6个、7个、8个、9个、10个，或更多个自气体分配板310a的中心轴径向向外地延伸的环。另外，可调整每个环包含的孔的数目以及在环内的每个孔之间的间隔。例如，每个环可具有少于或约3个、4个、5个、6个、8个、10个、15个、20个、25个、30个、35个、40个、45个、50个、60个、70个、80个、90个或每环更多个孔。另外，每个孔之间的间隔可在环内以及环之间从一个孔到下一孔类似或不同。这种调整可用以优化穿过气体分配板310a的流量。
图5B图示具有同样大小孔的多个环的气体分配板310b。如图所示，一或多个环可旋转或偏离附近环。这种设计可提供穿过气体分配板310b的更均匀的流量。孔可遍及气体分配板或者在特定环内或跨环处具有类似或不同尺寸。另外，孔之间的间隔在环内或环之间可以是均匀的或不同的。例如，示例性气体分配板310b可包括多个环，这些多个环具有在约0.1mm与约10mm之间的均匀孔尺寸。孔尺寸在实施例中可在约1mm与约5mm之间，或在约2mm与约4mm之间。另外，每个环可具有约3个与约100个之间的孔或更多个。例如，朝向气体分配板310b的内部的环可包括较少孔，而自气体分配板310b的中心径向向外的环可包括更多孔。因此，环内的任一较小范围的孔具体地包含在较大范围内。应理解，图5A及图5B仅为气体分配板210设计及配置的示例，且本技术中另外包含对孔位置、大小及形状的任一数量的修改。
转向图6，图6图示根据本技术的实施例的示例性处理系统600的一部分的示意横截面图。处理系统600可包括某些类似于在例如图2中图示的系统的部件。处理系统600可包括定位在具有支撑构件614的平台612上的远程等离子体源(remote plasma source；“RPS”)单元610。RPS单元610、平台612及支撑构件614可类似于上述的那些。处理系统600可进一步包括通过额外凸缘配接器618支撑的输送管616，且输送管616可与RPS单元610耦接。尽管输送管616及凸缘配接器618可具有类似于上述那些的特性，但尺寸可基于与处理腔室605的差异而不同于图2的那些。例如，输送管616及凸缘配接器618两者可具有小于图2中图示的处理系统的那些的长度尺寸。这些差异及它们的优势将在下文详细地说明。
如在图2及图3中图示，处理腔室205可包括具有支架205的铰链设计，支架205在处理腔室205内下降及定位在间隔件222上。气箱220可随后定位在部件的顶部上并与间隔件222耦接。此设计可能在处理腔室205的生产期间对去除用于替换的支架205以及支架205的插入造成困难。可能支架205在初次定位或替换期间可刮伤间隔件222。如果间隔件222具有涂层或阳极化整饰面，则表面缺陷或刮痕如果由前驱物或等离子体流出物接触，则可提供用于腐蚀或较早腐蚀的位置。因此，处理腔室605另外包括易于生产及替换的特征。
处理腔室605包括界定输送管616的至半导体处理腔室605的入口的气箱620。气箱620可耦接在输送管616的远端区域周围，或输送管616可在实施例中穿过气箱620。气箱620可包括与凸缘配接器618耦接的平面的或大体上平面的表面。处理腔室605亦可包括沿一表面接触气箱620的第一环形支撑件622，此表面与气箱620平面的或大体上平面的表面相对。第一环形支撑件622可在环形支撑件的第一表面处接触气箱620。第一环形支撑件622及气箱620一起可界定在处理腔室的内部区域周围的第一通道623的至少一部分。第一通道623可位于气箱与第一环形支撑件的界面处。第一环形支撑件622可在第一环形支撑件的内径处界定凹进壁架。气箱620可在与气箱620的平面的或大体上平面的表面相对的表面内界定凹进壁架。通过气箱620界定的凹进壁架可经界定以与第一环形支撑件622的凹进壁架的位置重合以界定第一通道623。气体分配组件625可定位在或安装在第一通道内。
气体分配组件625可包括如先前所述的气体分配板、环形衬垫及顶板，或可包括较少的部件。例如，气体分配组件625可以是安装在第一通道623内的气体分配板。在实施例中，环形衬垫可安装在气体分配板上，且顶板可安装在环形衬垫上，且环形衬垫及顶板两者可至少部分地安装在第一通道623内。气体分配组件625的部件可经定位以防止第一通道623、气箱620及第一环形支撑件622的表面暴露于经由输送管616输送的前驱物或等离子体流出物。第一通道623可具有等效于气体分配组件625的尺寸，所以气体分配组件在第一通道623内齐平。在其他实施例中，第一通道可沿气体分配组件之外径，以及如先前所述在顶板与气箱620之间具有一或多个缝隙。
在一些实施例中，可包含第二环形支撑件624且第二环形支撑件624可在第一环形支撑件622的第二表面处接触第一环形支撑件622，此第一环形支撑件622的第二表面与第一环形支撑件622的第一表面相对。第二环形支撑件624可具有与第一环形支撑件622类似的形状。在实施例中，第二环形支撑件624可具有大于或小于第一环形支撑件622的厚度。类似于第一环形支撑件622，第二环形支撑件624亦可在第二环形支撑件的内径处界定凹进壁架。第二环形支撑件624的凹进壁架连同第一环形支撑件622的第二表面，可各自至少部分地在半导体处理腔室的内部区域周围界定第二通道626。尽管未图示，但是类似于气箱620，第一环形支撑件622亦可在第一环形支撑件的第二表面内界定凹进壁架。此凹进壁架可增大第二通道626的高度以容纳类似于气体分配组件625的那些的额外部件。
处理腔室605亦可包括安装在第二通道626内的第二气体分配板627。第二气体分配板627及气体分配组件625的气体分配板可以是类似或不同的设计，且可两者皆由石英或如先前所述的材料组成或包括石英或如先前所述的材料。气体分配板可具有彼此类似的孔配置，或者不同于彼此的配置，且任一者或两者气体分配板可包括类似于关于图5A至图5B论述的那些的配置。举例而言，气体分配组件625的第一气体分配板及第二气体分配板627可由类似形状表征，且可每个界定多个孔，这些多个孔位于绕单独的气体分配板的环中。在实施例中，板可具有彼此对准的孔或可具有彼此偏移的孔以改进穿过板的流量的均匀性。尽管未图示，但是应理解，处理腔室605亦可包括台座、加热器及如关于图2描述的其他部件。
气箱620、第一环形支撑件622及第二环形支撑件624可具有类似外径及可经堆栈以至少部分地界定处理腔室605的外部尺寸，以及至少部分地界定处理腔室605的内部或处理区域的尺寸。部件可如图示经堆栈以界定第一通道623及第二通道626。此堆栈设计以及气箱620的平面表面可允许较短的支撑构件614、配接器凸缘618及输送管616。可降低这些部件的高度因为不同的气箱620设计可不包括延伸进处理腔室605中的凹进部分。因而，输送管616可具有进入处理腔室605的内部的减小的长度。通过减小输送管长度，输送至处理腔室605的前驱物或等离子体流出物可具有至基板的较短流动路径。通过减少流动路径的长度，可维持等离子体前驱物的解离，且蚀刻工艺可比当在具有从等离子体流出物生成到与要蚀刻的基板或材料接触的较长流动路径的腔室中执行时更加高效。
图7图示根据本技术的实施例的示例性气体分配板725的横截面平面图。如上文论述，此图图示气体分配板725至第一环形支撑件622的耦接，以及来自输送管616的透视图。如图所示，包括销631以支撑及定位气体分配板725以防止或减少板在第一通道623内的移动。不同于安装在诸如图2中的支架上，通过利用第一环形支撑构件622，可产生直接连接以确保气体分配板725的适当位置或定向。处理腔室605可包括至少一个销631，且可包括诸如销631a、销631b及销631c的任意数目的销，例如所述销可拆卸地将气体分配板725与第一环形支撑件622耦接在一起。
销可在实施例中延伸穿过第一环形支撑件622以另外将第二气体分配板627销连接至第二环形支撑件624，或可在实施例中在第一环形支撑件622内停止。销可仅仅在相对位置固持板，或可具体地将板固定在适当位置中，诸如使用耦接构件，诸如例如螺钉、螺杆等，其可防止部件在没有去除耦接构件的情况下抽出。在生产期间，气体分配板725可在气箱620与第一环形支撑件622耦接之前在销上滑动。随后可在处理期间防止或大体上防止气体分配板725移动，移动可在其他情况下使得一或多个部件遭刮伤或使得涂层或保护层遭去除或损坏。
转向图8，图8图示根据本技术的实施例的示例性处理腔室800的部分的示意横截面图。处理腔室800可类似于图6的处理腔室605，其中对输送管816、配接器凸缘818及气箱820具有调整。尽管未图示处理系统的若干部件，但其他部件可如先前所述。如图所示，配接器凸缘818可界定端口825及通道827的至少一部分以用于提供前驱物的入口，其经配置以绕过RPS单元及进入输送管816及处理腔室805。输送管816亦可在RPS单元与气箱820之间界定通道827的至少部分以允许将前驱物转移进半导体处理腔室820中。输送管816亦可界定一或多个孔828，一或多个孔828提供来自RPS单元的前驱物或等离子体流出物的入口。在实施例中，孔828可绕输送管间隔开以围绕通道827提供入口。
插入件829可定位在输送管816内，如图中图示。插入件829可提供自RPS单元及输送管816的通道827的至少一部分至插入件829的混合区830的入口。插入件829的混合区830可以由多个混合段表征。第一混合段831可以由自入口至插入件829的混合区830的逐渐变细的形状表征。在实施例中，至混合区的入口可具有高达输送管816的内径的直径。插入件829的混合区830亦可包括第二混合段833，第二混合段833可以由自靠近第一混合段831的位置至输送管816的出口的扩展的内径表征。
混合区830可进一步包括第三混合段835，第三混合段835可以由具有小于输送管816的内径的内径的圆柱形形状表征。例如，第三混合段835可具有一内径，此内径小于或约为输送管816的内径的90％。在实施例中，第三混合段835的内径亦可小于或约为输送管816的内径的85％、80％、75％、65％、60％、55％、50％、45％、40％、35％、30％、25％、20％、15％、10％、或5％。在实施例中，第三混合段的内径亦可大于或约为输送管816的内径的5％、10％、15％、20％、25％、30％、35％、40％、45％、50％、55％、60％、65％、70％、75％、80％、85％、90％或95％。通过包括混合段及插入件，经由通道827引入的前驱物在进入处理腔室805之前可更均匀地与前驱物或等离子体流出物混合，此前驱物或等离子体流出物经由RPS单元引入。
如在图8中图示，气箱820可由多个板制成以允许进一步进入绕过前驱物，此绕过前驱物可维持与自RPS单元引入的任意前驱物或等离子体流出物分隔直到它们进入处理腔室805。在实施例中，气箱820可包括彼此耦接的第一气箱板840及第二气箱板842。第二气箱板842可沿第二气箱板842的第二表面至少部分地接触第一环形支撑件622。气箱板842的第二表面可在与第一气箱板840接触的第二气箱板842的第一表面对面。第二气箱板842可在实施例中界定复合通道或多个通道845。当第一气箱板840与第二气箱板耦接时，可经由复合通道或多个通道845界定流动路径。第一气箱板840可另外界定端口847，端口847提供至多个通道845的至少一个通道的入口。绕过前驱物可经由端口847引入及流入与等离子体流出物分隔的处理腔室中。
图9图示根据本技术的实施例的示例性气箱820布置的横截面平面图。如上所述，气箱820可包括耦接在一起的第一气箱板840及第二气箱板842。气箱820的两个板界定输送管816的入口。可视为复合通道的多个通道845在第二气箱板842内界定。在第一气箱板840中的端口847可提供至多个通道845的入口及自可绕过RPS单元的前驱物的端口847的流动路径。多个通道845可提供用于更均匀地将前驱物分散进处理腔室805中的流动图案，此前驱物经由端口847引入。可界定多个通道845以产生自端口847遍及多个通道845引入的绕过前驱物的递归流量。
第二气箱板842可另外界定至少一个通道949，诸如进入通道，提供自多个通道845至半导体处理腔室805的内部区域的入口。第二气箱板842亦可界定多个通道949以向处理区域提供更均匀流动的前驱物。在实施例中，通过第二气箱板842界定的通道949可定位在或位于自端口847径向向外处，端口847通过第一气箱板840界定。这种配置可在前驱物经由第二气箱板842中的通道949进入处理腔室805之前经由通道845提供前驱物的更均匀分配。
图10图示根据本技术的实施例的示例性气箱820布置的部分的横截面图。如先前所述，气箱820可包括第一气箱板840及第二气箱板842。第二气箱板842可界定多个通道845，以及如先前所述提供至处理腔室805的入口的一或多个进入通道949。前驱物可绕过RPS单元并经由进入通道949进入处理腔室并接触气体分配组件，诸如先前论述的气体分配组件625。气体分配组件625可包括顶板1020，其可包括允许绕过前驱物进入气体分配组件625并经分配至基板用于处理的一或多个孔1025。另外或替代地，顶板1020可能不包括孔1025，在此情况下进入处理腔室949的绕过前驱物可围绕气体分配组件625输送以进入处理腔室的处理区域。气体分配组件625可能安装在其上的第一环形支撑件可界定凹口，绕过前驱物可通过此凹口穿过气体分配组件625。随后绕过前驱物可与任意前驱物或等离子体流出物流体分隔，此任意前驱物或等离子体流出物自RPS单元分配直到前驱物穿过气体分配组件625之后。在实施例中，气体分配组件625亦可定位成与气箱820的侧壁齐平以确保绕过前驱物经由顶板1020中的孔1025进入气体分配组件625。
图11图示根据本技术的实施例的蚀刻基板的方法1100。方法1100可包括将含氯前驱物输送至RPS单元，同时在操作1110处生成等离子体以产生等离子体流出物。在操作1120处，等离子体流出物可流入处理腔室中并穿过石英气体分配板。在操作1030处，等离子体流出物可蚀刻安放在处理腔室中的基板。处理腔室可以是在上段中论述的任一腔室。蚀刻操作在实施例中可在约300℃与约500℃之间的温度下进行，且在实施例中可在约300℃以下进行。
蚀刻工艺可另外包括引入一或多种前驱物，这些一或多种前驱物经由先前所述端口的任一者绕过RPS单元。在实施例中腔室可维持在真空下，及亦可增压至约1托或更多，诸如高达约3托、高达约5托、高达约10托、高达约20托或更高。当在关于先前附图描述的腔室的一者中执行方法1100时，可保护腔室部件隔开等离子体流出物。因此，腔室部件可能劣化速度不如未受保护部件快，且可能需要比一些常规腔室部件更少的维护、更少的清洁及更不频繁的替换。另外，所述腔室可允许自远程等离子体单元至基板的较短流动路径，此可由于解离氯的较少重新组合而增大蚀刻操作的效率。
在先前描述中，为说明的目的，已阐明众多细节以提供对本技术的各实施例的理解。这对于本领域技术人员来说是显而易见的，然而，某些实施例可在无这些细节的情况下，或在具有额外细节的情况下进行实践。
已经公开了若干实施例，本领域技术人员应认识到，在不脱离实施例的精神的情况下，可以使用各种修改，替代构造及等效物。另外，许多已知工艺及组件尚未描述以避免对本技术的不必要的模糊。因此，上文描述不应视为对本技术范围的限制。
在提供大量数值的情况下，应理解，除非上下文另有明确说明，在该范围的上限与下限之间的每个中间值除了下限单位的最小部分亦被具体公开。包含在规定范围内的任何规定值或未规定中间值与在规定范围内的任何其他规定或中间值之间的任何较窄范围。这些较小范围的上限及下限可以独立地被包括在此范围内或被排除此范围，并且在技术中亦包括在较小范围内包括两者或两者中的任一个或两个限制的每个范围，每个范围可以具体排除在所述范围内的任何限值。凡声明的范围包括一个或两个的限值，亦包括排除任何一个或两个所包括限值的范围。
如本文及在所附权利要求中使用，单数形式“一(a)”、“一(an)”及“此(the)”包括复数引用，除非上下文另有明确指示。因而，例如，对“一孔”的引用包括多个这种孔，及对“此板”的引用包括对一或多个板及本领域技术人员已知的其等效物的引用等。
此外，当在本说明书及所附权利要求中使用时，词语“包含(comprise(s))”，“包含(comprising)”，“包含(contain(s))”，“包含(containing)”，“包括(include(s))”和“包括(including)”意欲指定所声明的特征、整数、部件或操作的存在，但它们并不排除一个或多个其他特征、整数、部件、操作、动作或组群的存在或添加。

Claims (15)

1.一种半导体处理系统，包含：
远程等离子体源单元；
输送管，与所述远程等离子体源单元耦接；
配接器，所述远程等离子体源单元安装在所述配接器上，其中所述配接器限定穿过所述配接器的端口，且其中所述输送管延伸穿过所述配接器的中心孔；
插入件，所述插入件定位在所述输送管内，其中所述插入件提供自所述远程等离子体源单元至所述插入件内限定的混合区的入口，且其中穿过所述配接器限定的所述端口提供穿过所述插入件至所述插入件的所述混合区的流体入口；以及
半导体处理腔室，其中所述半导体处理腔室包含：
气箱，耦接在所述输送管的远端区域周围，
第一环形支撑件，在所述第一环形支撑件的第一表面处接触所述气箱，其中所述第一环形支撑件及所述气箱一起界定第一通道，所述第一通道在所述半导体处理腔室的内部区域周围，及
气体分配板，安装在所述第一通道内。
2.如权利要求1所述的半导体处理系统，进一步包含：
环形衬垫，安装在所述气体分配板上；以及
顶板，安装在所述环形衬垫上，其中所述环形衬垫及所述顶板两者均至少部分地安装在所述第一通道内。
3.如权利要求1所述的半导体处理系统，进一步包含第二环形支撑件，所述第二环形支撑件在所述第一环形支撑件的第二表面处接触所述第一环形支撑件，所述第一环形支撑件的第二表面在所述第一环形支撑件的所述第一表面对面，其中所述第二环形支撑件及所述第一环形支撑件一起界定第二通道，所述第二通道在所述半导体处理腔室的内部区域周围。
4.如权利要求3所述的半导体处理系统，其中所述气体分配板是第一气体分配板且所述半导体处理系统进一步包含第二气体分配板，所述第二气体分配板安装在所述第二通道内。
5.如权利要求4所述的半导体处理系统，其中所述第一气体分配板及所述第二气体分配板包含石英、陶瓷或经涂覆铝。
6.如权利要求1所述的半导体处理系统，进一步包含至少一个销，所述至少一个销可拆卸地将所述气体分配板与所述第一环形支撑件耦接在一起。
7.如权利要求1所述的半导体处理系统，其中所述输送管界定在所述远程等离子体源单元与所述气箱之间的通道的至少一部分，所述气箱经配置以允许前驱物经由所述输送管输送进所述半导体处理腔室中，所述前驱物绕过所述远程等离子体源单元。
8.如权利要求7所述的半导体处理系统，其中所述插入件提供至所述输送管的通道的所述至少一部分的入口。
9.如权利要求8所述的半导体处理系统，其中所述插入件的所述混合区包含第一混合段，所述第一混合段由自所述入口至所述插入件的所述混合区逐渐变细的形状表征，及其中所述插入件的所述混合区包含第二混合段，所述第二混合段由自靠近所述第一混合段的位置至所述输送管的出口的扩展的内径表征。
10.如权利要求9所述的半导体处理系统，其中所述插入件的所述混合区进一步包含第三混合段，所述第三混合段由内径小于所述输送管的内径一半的圆柱形状表征。
11.如权利要求1所述的半导体处理系统，其中所述气箱包含彼此耦接的第一气箱板及第二气箱板，其中所述第二气箱板沿所述第二气箱板的第二表面至少部分地接触所述第一环形支撑件，所述第二气箱板的第二表面在所述第二气箱板的第一表面对面，所述第二气箱板的第一表面接触所述第一气箱板，其中所述第二气箱板界定多个通道，及其中耦接的所述第一气箱板及第二气箱板界定穿过所述多个通道的流动路径。
12.如权利要求11所述的半导体处理系统，其中所述第一气箱板界定端口，所述端口提供至所述多个通道中的一通道的入口。
13.如权利要求12所述的半导体处理系统，其中所述第二气箱板界定至少一个进入通道，所述至少一个进入通道提供自所述多个通道至所述半导体处理腔室的内部区域的入口，其中所述至少一个进入通道从由所述第一气箱板界定的所述端口径向向外地定位。
14.一种半导体处理系统，包含：
远程等离子体源单元；
输送管，与所述远程等离子体源单元耦接；
配接器，所述远程等离子体源单元安装在所述配接器上，其中所述配接器限定穿过所述配接器的端口，且其中所述输送管延伸穿过所述配接器的中心孔；
插入件，所述插入件定位在所述输送管内，其中所述插入件提供自所述远程等离子体源单元至所述插入件内限定的混合区的入口，且其中穿过所述配接器限定的所述端口提供穿过所述插入件至所述插入件的所述混合区的流体入口；以及
半导体处理腔室，其中所述半导体处理腔室包含：
气箱，提供至所述半导体处理腔室的入口；
第一环形支撑件，在所述第一环形支撑件的第一表面处接触所述
气箱，其中所述第一环形支撑件及所述气箱各自界定第一通道的一部分，所述第一通道位于所述气箱与所述第一环形支撑件的界面处；
第一气体分配板，安装在所述第一通道内；
第二环形支撑件，在所述第一环形支撑件的第二表面处接触所述第一环形支撑件，所述第一环形支撑件的第二表面在所述第一环形支撑件的第一表面对面，其中所述第二环形支撑件至少部分地界定第二通道，所述第二通道位于所述半导体处理腔室内部区域周围；以及
第二气体分配板，安装在所述第二通道内，其中所述第一气体分配板及所述第二气体分配板包含石英。
15.如权利要求14所述的半导体处理系统，其中所述气箱包含彼此耦接的第一气箱板及第二气箱板，其中所述第二气箱板沿所述第二气箱板的第二表面至少部分地接触所述第一环形支撑件，所述第二气箱板的第二表面在所述第二气箱板的第一表面对面，所述第二气箱板的第一表面接触所述第一气箱板，其中所述第二气箱板界定多个通道，及其中耦接的所述第一气箱板及第二气箱板界定穿过所述多个通道的流动路径。
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