CN101730921A - 基板清洁腔室与其部件 - Google Patents

基板清洁腔室与其部件 Download PDF

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CN101730921A
CN101730921A CN200880017948A CN200880017948A CN101730921A CN 101730921 A CN101730921 A CN 101730921A CN 200880017948 A CN200880017948 A CN 200880017948A CN 200880017948 A CN200880017948 A CN 200880017948A CN 101730921 A CN101730921 A CN 101730921A
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M·瑞克
W·W·王
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Abstract

一种基板清洁腔室包含多种部件，例如，一消耗性陶瓷衬垫、基板加热底座、以及工艺套组。该消耗性陶瓷衬垫是经提供以连接一远程气体激发器的出气道至一基板清洁腔室的进气道。该基板加热底座包含一环状板，该环状板具有一基板承接表面，且该基板承接表面具有设置在一凹槽数组内的数个陶瓷球。一工艺套组包含一顶板、顶部衬垫、配气板、底部衬垫、集中环。

Description

基板清洁腔室与其部件
技术领域
本发明是有关于基板清洁腔室与其部件。
背景技术
在例如半导体及显示器的基板处理中，层是形成在该基板上，然后蚀刻以形成特征结构(feature)，例如导电内联机、接触、通孔、闸极和阻障。例如，电气内联机的图案可通过在该基板上沉积一含金属的导体、在该导体上形成一图案化抗蚀刻材料、蚀刻该导体以形成该内联机、除去残余的光阻、以及在该蚀刻的特征结构上沉积介电层来制造。可进一步蚀刻该介电层以形成接触孔或通孔，其暴露出下方的含金属导电材料或其它基板层。导电材料然后沉积至该等经蚀刻的孔或沟槽内，以电气接触该下方的导体。例如，在含铜内联机的形成中，可蚀刻该介电层以形成暴露出下方的铜导电材料的接触孔。可在该暴露出的导体和接触孔上沉积一薄的铜晶种层，以促进随后的铜电镀工艺，以填充该等接触孔。
但是，该含金属导体上的污染物和不期望存在的表面材料需要该暴露出的导体表面在执行后续的工艺步骤之前先经清洁。例如，在一中间工艺步骤期间暴露在氧气物种下的导体上常会形成原生氧化膜(native oxidefilm)，例如，在一光阻剥除工艺期间，其中使用一含氧气体等离子来剥除光阻，或者是在不同腔室间传送基板时。该等氧化膜增加导体表面之间的接触接口处的电阻。该表面材料也可能有来自先前工艺的残余工艺沉积物，例如含碳、含硅、含氟、及含氮工艺残余物。这些工艺沉积物可使空孔(void)或其它不规则物形成在暴露出的及被沉积的材料之间的接口处。
基板清洁腔室，也称为预清洁腔室，是用来在处理之前以及处理步骤之间从该基板表面清除氧化膜及其它不期望存在的工艺沉积物。在清洁处理期间，该基板是支撑在该清洁腔室内，并且一经激发的清洁气体是经形成在一远程气室内并导入该腔室中。该清洁气体与该等表面残余物反应并将其除去。在某些工艺中，该基板加热底座包含一加热组件，以在清洁期间控制该基板的温度。
但是，在此种清洁处理中使用经激发的清洁气体的一个问题在于难以控制该经激发的的清洁气体的自由基及离子物种的能量。该清洁气体和该基板表面之间的较高能量碰撞可导致对下方基板的损伤。该清洁气体中较轻的离子，例如H+，在其穿透该基板表面而损伤下方介电层时也可能是有害的。因此，希望可以控制导入该工艺腔室内的经激发物种的能量及类型。
另一个问题在于该清洁气体常蚀除并腐蚀围绕一气体激发器内远程的该激发区的远程腔室壁，并且甚至可蚀刻并腐蚀该清洁腔室内部的部件。此种腐蚀损伤这些部件，并且若该部件是该腔室的一整合部分，则必须关闭该腔室以使该部件可在预定的工艺周期数量后被翻修或置换，这是不理想的。习知的不锈钢壁和衬垫特别容易受到腐蚀，而需要频繁的置换或整修。
又另一个问题在该清洁腔室内接触该基板的基板加热底座在该基板传送工艺期间传送污染物和工艺残余物及沉积物至该基板背部或甚至刮伤该基板时发生。含有加热组件的基板加热底座也可能在该基板表面上提供不均匀的加热。拥有由升高的凸形物(mesa)和沟槽组成的基板承接表面的基板加热底座容许一热传气体在该基板后方流动以改善温度均匀性，但仍传送不期望存在的工艺残余物和沉积物数量至该基板。
因此，希望具有一种清洁腔室和气体激发器，其可选择性过滤经激发的气体物种，例如，以从该清洁气体滤掉特定离子物种。也希望具有可轻易置换或整修的腔室部件。更希望具有一种基板加热底座，其使得传送该等工艺沉积物至该基板的背部表面所造成基板的污染最小化。也希望具有一种容许更均匀的基板加热的基板加热底座。
发明内容
本发明提供一种用于连接一远程腔室的出气道至一基板清洁腔室的进气道的消耗性(consumable)陶瓷衬垫。该衬垫包含：一入口圆柱，其外径是按一定尺寸制作以适配至该远程腔室的出气道内；一出口圆柱，与该基板清洁腔室的进气道连接；以及一圆锥形展开部(flare)，是将该入口圆柱连结至该出口圆柱。
该衬垫的该圆锥形展开部可包含一圆锥形表面，其由一垂直轴而倾斜约10度～60度。在一实施例中，该圆锥形展开部的长度和该出口圆柱的长度的比例为约1∶2至约1∶8。在一实施例中，该衬垫的该入口圆柱包含一第一直径，而该衬垫的该出口圆柱包含一第二直径，其是第二直径至少是第一直径的1.5倍大。在更一实施例中，第一直径为约1至约4公分，且第二直径为约2至约8公分。在一实施例中，该衬垫包含一陶瓷材料，该陶瓷材料能够从在该远程气体激发器内产生的激发气体中清除一离子物种。在一实施例中，该衬垫是由石英、氧化铝或氮化铝组成，并且甚至厚度可以为约2毫米至约6毫米。该衬垫可更包含一衬垫锁定圆柱，该圆柱是按一定尺寸制作以适配至该出口圆柱的外径周围。
本发明提供一种将一陶瓷衬垫置入一上腔室壁以连接一远程腔室的出气道至一基板清洁腔室的进气道的方法，该陶瓷衬垫包含一入口圆柱、一出口圆柱及一圆锥形展开部，其中，入口圆柱是按一定尺寸制作以适配至该远程腔室的出气道内，出口圆柱则与该基板清洁腔室的进气道连接，圆锥形展开部是将该入口圆柱连结至该出口圆柱。该方法的步骤如下：(a)将一衬垫锁定圆柱设置于该陶瓷衬垫的出口圆柱上方；(b)将一衬垫固持工具滑入该陶瓷衬垫的出口圆柱内，且该衬垫固持工具的外径是按一定尺寸制作以紧夹该出口圆柱的内径；以及(c)抓住该衬垫固持工具，并将该陶瓷衬垫的入口圆柱置入该远程腔室的出气道内。
在一实施例中，该方法更包含：(d)转动该衬垫固持工具以将该锁定圆柱的环状凸缘锁进上腔室壁的匹配环状唇部内。
本发明提供一种用于一基板清洁腔室的基板加热底座。该基板加热底座包含：(a)一环状板，包含：一第一盘状物，具有一基板承接表面，且该基板承接表面具有凹槽的一数组；一第二盘状物，具有一经成形以容纳加热组件的通道；以及一铜焊连结，是连结该第一和第二盘状物；(b)数个陶瓷球，每一个皆设置在该基板承接表面上的一凹槽内；以及(c)一加热组件，嵌设在该环状板内。
该基板加热底座的铜焊连结可包含一铝铜焊化合物。该底座的第一及第二盘状物可包含铝。该底座的该等陶瓷球可由氧化铝、石英、蓝宝石、氮化硅、合成刚石、氧化锆、三氧化二铝、或其混合物组成。在一实施例中，该底座的陶瓷球的直径为约1至约3毫米，并且其直径甚至可大到足以将该基板承接表面维持在比该环状板的顶表面高约0.01毫米至约0.5毫米。
本发明提供一种用于一基板工艺腔室的配气板。该配气板具有：第一孔的一第一环，各个第一孔的直径为d：第二孔的一第二环，各个第二孔的直径为2d，且第二环位于第一环的径向外侧；一第三孔的一第三环，各个第三孔的直径为3d，且第三环是位于第二环的径向外侧；以及第四孔的一第四环，各个第四孔的直径为4d，且第四环是位于第三环的径向外侧。
在配气板的一实施例中，直径d为约1至约5毫米。该配气板可由陶瓷组成，并且甚至可包含氧化铝或氧化硅。
本发明提供一种用于一基板清洁腔室的工艺套组，该基板清洁腔室具有用于支托一配气板的腔室盖，且配气板是面对一基板加热底座。该工艺套组具有：(a)一顶板，用以接触该腔室盖，该石英顶板具有一用以使工艺气体通过其间的孔洞，并且具有一外围边缘；(b)一顶部衬垫，接触该石英顶板的外围边缘，并且是位于该配气板上方；(c)一底部衬垫，位于该配气板下方；以及(d)一集中环，搁置在该基板加热底座的外围边缘上。
在该工艺套组的一实施例中，该顶板、顶部衬垫、底部衬垫和集中环皆包含石英。该工艺套组的顶板可包含一环形盘状物，其具有一外围边缘以及一用以使工艺气体通过其间的孔洞。该顶板的厚度为约1毫米至约5毫米。在一实施例中，该工艺套组的配气板是由陶瓷组成，并且甚至可包含氧化铝或氧化硅。该工艺套组的顶部及底部衬垫可包含圆柱。该工艺套组的集中环可具有一内凸缘，其搁置在该基板加热底座的外围边缘上，该凸缘包含一倾斜的上表面，且该上表面在基板外围处与一垂直表面接合。在更一实施例中，该工艺套组的倾斜上表面包含约85至约100°之间的角度。
附图说明
可关于上面描述、如下附属申请专利范围、以及附图而对本发明的这些特征结构、态样、及优势有更佳的了解，其示出本发明的范例。但是，应了解每一个特征结构均可在本发明中广泛使用，而不仅是在特定图式背景中，并且本发明包含这些特征结构的任意组合，其中：
第1图是包含基板清洁腔室的基板工艺设备的一实施例的剖面侧视图；
第2A图是利用一衬垫锁定圆柱和衬垫固持工具而适配入该清洁腔室的顶板内的消耗性陶瓷衬垫的分解透视图；
第2B图是适配入该清洁腔室的顶板内的陶瓷衬垫和衬垫锁定圆柱的简要侧视图；
第3A图是具有嵌设在该基板承接表面内的陶瓷球的基板加热底座的透视图；
第3B图是具有以铜焊连结的第一和第二盘状物，以及一嵌设的加热组件的第3A图的基板加热底座的剖面简要图；
第4A图是一工艺套组和配气板的分解透视图；
第4B图是一清洁腔室内的工艺套组、配气板和基板加热底座的简要部分剖面图；
第4C图是该配气板的上视图；以及
图5是包含基板清洁腔室的基板工艺设备的简要图。
主要组件符号说明
20基板设备        22基板
24清洁腔室        28a-d  腔室
26多腔室设备      30围壁
32上壁/上腔室壁   34侧壁
36底壁            38处理区
40进气道/气体入口 42(远程)腔室
44排气系统        46排气口
48节流阀                50排气泵
52气体激发器            54(气体激发)区域
56清洁气源              57感应天线
58流量阀                60衬垫
61内表面                62出气道
64入口圆柱              66展开部
68出口圆柱              69、79唇部
70上端                  71锁定圆柱
72下端/出口端           73壁/凸缘
74表面                  75榫
76离子过滤器            77榫部分
78、170控制器           80底座
81衬垫固持工具          82板
84、86(基板承接)表面    88凹槽
90球                    92加热组件
94、96盘状物            98通道
100接线(柱)             102中心
104铜焊连结             106侦测器
110支杆                 112部件
114工艺套组             116顶板
118顶部衬垫             119机器手
120配气板               122底部衬垫
124集中环               126盘状物
128、142外围边缘        130孔洞
132上缘                 134顶表面
136底表面               139a-d环
140孔                   140a-d孔
144顶部区               148内凸缘
150倾斜上表面           151垂直表面
152脚部        154外凸部
156负载锁定室  158卡匣
160侧壁        162机器 手
164排气口
具体实施方式
第1图标出一基板设备20的一实施例，其包含适于清洁一基板22的清洁腔室24。如图所示的该清洁腔室24是适于清洁基板22，例如半导体晶片；但是，该清洁腔室24可经熟知技艺者调整而适于清洁其它基板22，例如平面显示器、聚合物面板、或其它电路容纳结构。因此，本发明的范围不应被限制在此所示的该清洁腔室的例示实施例。一般来说，该清洁腔室24包含一或多个围壁30，其可包含一上壁32、侧壁34、以及一底壁36，并且其包围一处理区38。从一远程腔室42提供经激发的清洁气体至该清洁腔室24的进气道40。该清洁气体与基板22及该腔室24内的其它表面反应。废气及副产物透过一排气系统44而从该腔室24排出，排气系统44可包含一排气口46，其接收来自该处理区38的气体，并且也可包含一节流阀48，以控制该腔室24内的气体压力，以及一或多个排气泵50，例如涡轮分子排气泵。该排气系统44可以是能够在该腔室24内保持次大气压(sub-atmospheric pressure)。
一种适于在远程激发该清洁气体的远程腔室42包含一远程气体激发器52，其耦合能量至一气体激发区域54。一清洁气源56提供一清洁气体至该气体激发区域54。可提供一流量阀58以控制进入该远程腔室42的清洁气体的流速。该气体激发器52耦合能量至该气体激发区域54内的清洁气体，以形成含有离子及自由基物种的经激发的清洁气体。该气体激发器52可耦合，例如，RF或微波能量至该清洁气体。在一态样中，该远程气体激发器52包含一感应天线57，其以，例如，约100瓦至约10千瓦的功率层级而感应耦合RF能量至该气体激发区域54内的清洁气体。该气体激发器52也可以是一超环面气体激发器，以耦合能量至该远程气体激发区域54内的清洁气体，如同例如在Smith等人的美国专利第6,150,628号中所描述者，其在此通过引用的方式并且以其整体并入本文中。由该环状气体激发器所施加的适当RF功率层级可以从约1000瓦至约10,000瓦。也可使用包含一微波气体活化器的远程气体激发器52，其提供从约300瓦至约5千瓦的微波功率层级。
一消耗性的陶瓷衬垫60连结该远程气体激发器52的出气道62至该腔室24的进气道40，如第2A和2B图所示者。通过以该衬垫60的至少一部分表面覆盖通道40、62的内表面而保护该等通道40、62，以使该衬垫60的内表面61暴露在该激发气体物种下。该衬垫60包含一入口圆柱64，且入口圆柱64的外径是按一定尺寸制作以适配至该远程气体激发器的出气道62内。在一态样中，该入口圆柱64的长度为L，其足够长而可从该远程腔室42延伸出至少约50毫米的距离。且该长度L是足够短以在该腔室24的气体入口40末端之前至少约1毫米处终止。在一态样中，该入口圆柱64的长度L为约100至约110毫米，以及直径为约1公分至约4公分之间。
一圆锥形展开部66连结该入口圆柱64至一出口圆柱68。该圆锥形展开部66包含一管，其直径是沿着一圆锥形表面越过该展开部66的长度而增加。该圆锥形展开部66具有一上端70和一下端72。该圆锥形展开部66的上端70的外径的尺寸是经订制以对应于在该圆锥形展开部66和该入口圆柱64之间的接合处的该入口圆柱64的外径。该圆锥形展开部66的下端72的外径的尺寸是经订制以对应于在该圆锥形展开部66和该出口圆柱68之间的接合处的该出口圆柱68的外径。该圆锥形展开部66的下端72的直径是较该圆锥形展开部66的上端70的直径大至少1.5倍。在一态样中，该入口圆柱64、该圆锥形展开部66和该出口圆柱68是一体连接。
该圆锥形展开部66是作为逐渐增加该衬垫60在该上端70及下端72之间的内部空间的直径，以提供进入该工艺腔室的激发气体物种更均匀的分配。直径的骤然改变咸信会造成来自该衬垫出口的气体分配不均匀。该圆锥形展开部66的直径从该入口圆柱64的第一直径朝该出口圆柱68的第二直径渐成锥状，以提供沿着该解离的气体物种的流动路径的空间的逐渐增加。在一态样中，该圆锥形展开部66包含一圆锥形表面，其是相对于通过该圆锥形展开部的中心线的垂直轴而呈一角度，此角度为约10度至约60度。此外，该圆锥形展开部66的长度对于该出口圆柱68的长度的比例是约1∶2至约1∶8。间隔该圆锥形展开部66在长度上的空间的增加是提供气体物种在该圆锥形展开部66的出口端72处的较佳分配。
该衬垫60也具有一出口圆柱68，其与该基板清洁腔室24的进气道40连结。在一态样中，该出口圆柱68的外径是按一定尺寸制作以适配至该基板清洁腔室24的进气道40内。该出口圆柱68的长度为L，其是足够短以在该清洁腔室24的处理区之前终止，以避免在该腔室环境中腐蚀。当该入口圆柱64具有一第一直径时，该出口圆柱68包含至少较该第一直径大1.5倍的第二直径。在一态样中，该出口圆柱68的直径为约2公分至约8公分或更典型地约4公分。该出口圆柱68保护该腔室的气体入口40的内表面不受该激发气体物种腐蚀，同时也增加该衬垫的直径，以减少形成在该远程区域54内的激发气体物种之间的碰撞。
该消耗性的衬垫60包含一陶瓷材料，其能够从在该远程气体激发器内产生的激发气体中清除离子物种。例如，该衬垫60可包含石英、氧化铝或氮化铝。在一态样中，该衬垫60包含石英，并且能够通过吸附某些氢离子至其内表面74上而从该激发气体清除氢离子。咸信该石英内表面74是作为一离子过滤器76，以通过提供含氢物种可吸附的表面来减少该等自由基的再结合。也相信冲击该石英表面74的含氢物种将所吸附的含氢自由基释放进入该激发气体中，从而再生自由的氢自由基。但是，氢离子不会由石英表面74再生，因此，冲击该石英表面的氢离子会再结合而形成电中性的非离子物种。因此，让该活化或激发的清洁气体通过该石英表面74上方会致使离子物种从该激发清洁气体滤出，同时保存氢自由基。
该消耗性衬垫60的厚度是根据置换之前该衬垫必须承受的工艺周期数量来选择。该激发气体能够蚀刻并腐蚀该衬垫60，因此，该衬垫60必须在预定的工艺周期数量后置换。此外，该衬垫60的吸附性质随着越来越多的离子吸附至该陶瓷衬垫表面上而衰减。该衬垫60可承受的周期数量与该衬垫60的厚度有关。在一态样中，该衬垫60是足够厚以清除至少约30,000个工艺周期的离子物种，并且拥有约2毫米至约6毫米的厚度。
可通过将陶瓷粉末铸成预期形状来制造该衬垫60，例如，通过冷均压成型法(cold isostatic pressing)。例如，使陶瓷粉末与例如有机结合剂聚乙烯醇的液态结合剂结合。将该混合物置于一冷均压成型设备的橡胶袋中并均匀施加压力在该袋壁上，以紧压该混合物而形成拥有期望管状的陶瓷结构。可通过将该挠性容器浸泡在水中或通过其它加压方法来施加压力。可使用中空的管模将铸造的陶瓷预形(preform)制成圆柱或环状，并且可通过机械加工而进一步形塑所形成的铸成的陶瓷预形。然后烧结经过形塑的陶瓷预形以形成一经烧结的陶瓷。例如，可以约1300℃至约1800℃的温度烧结氧化铝约48至约96小时，通常在约1atm的压力下。可进一步形塑该烧结的陶瓷材料，例如，通过机械加工、研磨、激钻孔、或使用其它方法，以提供预期陶瓷结构。
该衬垫60是利用一衬垫锁定圆柱71而保持在该腔室内的适当位置上。该衬垫锁定圆柱71的尺寸是经订制以滑过该衬垫60的出口圆柱68的外径上方，并且其是靠着该出口圆柱68的一环状唇部69搁置，如第2A和2B图所示。该衬垫锁定圆柱71是适配至该衬垫60的出口圆柱68和该孔洞壁73之间，以形成一气密密封件，如第1图所示，并且可由金属或陶瓷材料制成。
有利地，该衬垫锁定圆柱71辅助该衬垫60置放进入该上腔室壁32，并且也辅助该衬垫60于暴露在等离子下一预定数量的工艺周期后的移除以利整修或置换。该衬垫锁定圆柱71包含一环状凸缘73，其从该锁定圆柱71的一端延伸出。该环状凸缘73拥有一平坦的榫75，其是嵌入从该上腔室壁32延伸出的环状唇部79上的匹配的平坦榫部分77，如第2B图所示。转动该衬垫锁定圆柱71以旋转该环状凸缘73，因此其滑至该上腔室壁32的环状唇部79后方，而在其后方锁定该环状凸缘。例如锁定梢的锁定阻件(blocker)(未示出)可嵌入该旋转式环状凸缘73的通道内，以阻挡并停止该凸缘进一步旋转。
第2B图也示出一种将该衬垫60嵌入一腔室盖内以连结一远程腔室42的出气道62至一清洁腔室24的进气道40的方法。在此方法中，首先将该衬垫锁定圆柱71置于该陶瓷衬垫60的出口圆柱68上方。然后，将一衬垫固持工具81通入该陶瓷衬垫60的出口圆柱68内，因此该衬垫固持工具81的外径紧夹该出口圆柱68的内径。一使用者抓住该衬垫固持工具81，然后将该陶瓷衬垫60的入口圆柱64嵌入该远程腔室42的出气道62内。接着转动该衬垫固持工具81以如所述般将该衬垫锁定圆柱71的环状凸缘73锁入该上腔室壁32的匹配的环状唇部79内。
该腔室24也可选择性地包含一腔室气体激发器(未示出)，其耦合能量至该腔室24的处理区38内的气体。例如，该腔室气体激发器可包含一或多个电极和一感应天线，以耦合RF能量。
提供一基板加热底座80以支托该基板清洁腔室24的处理区38内的基板22，如第1、3A、3B和4B图所示。该底座80包含一环状板82，板82具有一基板承接表面84，而基板承接表面84具有一凹槽88数组以及嵌入在该环状板82内的加热组件92。该加热组件92是由一控制器78控制。该控制器78能够相应于以下条件的一而供应可变功率层级给该加热组件92：来自一或多个监控该清洁腔室24或该远程腔室42内的情况的侦测器106的输入，或来自该设备20的使用者的输入。该底座80可选择性地包含一电极(未示出)，其可经偏压以将该基板22支托在该底座80上或影响该工艺的性质，例如该基板22的离子轰击的程度。施加至该电极的偏压也由该控制器78控制。
数个陶瓷球90的每一个皆设置在该基板承接表面84上的一凹槽88内，如第3A图所示。该等陶瓷球90是嵌入在该底座80的表面84内，而使每一个球90的一部分表面位在该底座表面84的平面上方。如此，该等球90的顶部区144构成一升高的由N个不连续区所组成的基板承接表面86，其中N是嵌入在该底座80的表面84内的球90的数量。该升高的基板承接表面86与该底座表面84垂直分离。也就是说，该升高的基板承接表面86比该环状板82表面高约0.01毫米至约0.5毫米。利用一是列的不连续点，并且在距离该加热底座80的环状板82的表面一垂直距离处支撑该基板22，藉以容许该腔室24内的气体在加热期间在该基板22和该环状板82表面之间传热。与让该基板22与该环状板82的表面接触相比的下，使该基板22悬置在该环状板82表面上方是允许该基板22更均匀加热，此乃因为热接触不会受到该板82的热传导性及表面接触性质的局部变异的直接影响。
在一态样中，该等陶瓷球90是球状，并且该等球90的直径足够大而可将该基板承接表面保持得比该环状板的顶表面高约0.01毫米至约0.5毫米。通常，该等球90的直径为约1毫米和约3毫米之间。在一态样中，该等球体的直径为约2毫米，并且从该环状板82的上表面突出约0.04毫米。该等陶瓷球90包含氮化硅、氧化锆、蓝宝石、合成刚石、以及氧化铝的至少一种，并且在一态样中包含氧化铝。
该环状板82是由两个盘状物94、96构成，其是利用铜焊连结而彼此结合在一起。在一态样中，如第3A和3B图所示，该环状板82包含一第一盘状物94，其具有升高的基板承接表面86。该第一盘状物94厚度为约10毫米至约30毫米，且直径为约10公分至约70公分。该盘状物94的直径是取决于待处理的基板的尺寸。该盘状物94的承接表面包含数个凹槽88，每一个凹槽88皆拥有足以容纳一陶瓷球90的直径及深度。该凹槽88可利用机械加工形成，并且较佳地包含往内倾斜约2和约20度之间的侧边，而使该凹槽88的直径在该第一盘状物的表面处稍微小于该陶瓷球90的直径。以此方式加工的凹槽88能够在嵌入陶瓷球90之后而将陶瓷球90限制在该环状板82的表面。
所提供的第二盘状物96的直径是与该第一盘状物94的直径匹配，且厚度为约6毫米和约15毫米之间。该第二盘状物96包含经形塑以容纳该加热组件92的通道98，并且由铝、铜、钛、钼或不锈钢、或其组合物的至少一种组成。在一态样中，该第二盘状物包含铝，并且该铜焊连结材料包含一种铝铜焊材料。该加热组件92包含一电阻组件，而该电阻组件具有足够的电阻以将该环状板82的表面84维持在约室温至约400℃的温度。该加热组件92是经由接线柱100供电，而接线柱100沿着该盘状物的中心102而延伸通过该第二盘状物96。
具有嵌设的加热组件92的环状板82可通过从厚度约5毫米的铝片以机械加工一第一盘状物94来形成。拥有距离该第一盘状物94的表面84约2毫米的深度的凹槽88是在对应于该等钻孔装埋的陶瓷球90的预期位置上钻入该盘状物94的表面84。从厚度约11.5毫米至约12.5毫米的铝片以机械加工一第二盘状物96，而使得第二盘状物96的直径与该第一盘状物94的直径相同。在该盘状物96内机械加工一弯曲的通道98，该通道98拥有对应于该加热组件92的尺寸的宽度及深度。在该第二盘状物96的中心102周围钻设至少一对孔(未示出)。该等钻孔的直径比该加热组件92的接线100的直径大至少10％。该加热组件92是通过将其压入该通道98内并将该等接线100穿过该等钻孔来施加至该第二盘状物96的沟槽侧。将一铜焊箔或铜焊化合物置于该第二盘状物96的沟槽表面上，以使其覆盖该第二盘状物96的表面。将该第一盘状物94的无孔侧保持在该铜焊表面上，并使该组件对齐，则该第一和第二盘状物94、96的周围会彼此重叠。该组件是通过将该组件置于炉管中、加热该组件至高于该铜焊材料的熔点并施加压力，如在热压法(hot press)中，来连结在一起。然后冷却该组件以形成一铜焊连结104。
该环状板82的背部表面是安装在用来支撑该环状板82的支杆110上。该支杆110包含一杆，且杆具有适于承接该环状板82的背部表面的承接表面。该杆可包含金属，例如不锈钢或铝，并且可以是实心或空心结构。在一态样中，该支杆110也包含一波纹管以及一举升机构(未示出)，而该举升机构是适于将该底座80升高及降低以用于承接一基板22、处理该基板22和从该腔室24中移出该基板22的位置。将该环状板82固定在该支杆110上的方法可包含将该支杆110焊接在该环状板82的底表面上；将一具有螺纹的接合器焊接在该环状板82的底表面上然后将该环状板82螺锁在该支杆110上；或者通过将一中空管子焊接在该环状板82的底表面上然后将该中空管子钳置在该支杆110上。
提供包含数个部件112的工艺套组114以容纳提供进入清洁腔室24的激发气体，并且在该基板表面上分配该气体，如第4A和4B图所示。该工艺套组114的部件112可包含，例如，顶板116、顶部衬垫118、配气板120、底部衬垫122、以及集中环124。该工艺套组114的该等部件112可轻易地从该腔室24移出，例如，以置换或修复被腐蚀的部件，或是调整该清洁腔室24以适应处理不同尺寸的基板22。该工艺套组114的部件可由石英制成，因为石英能够有效降低工艺气体自由基的再结合速率，例如氢自由基。
该顶板116包含一环状盘状物126，该盘状物126具有一外围边缘128和一孔洞130，而孔洞130是使工艺气体通过其间，如第4A图所示。该顶板116是按一定尺寸制作以适配至该基板清洁腔室24内，而该孔洞130的直径为约40毫米和约45毫米之间，并且位于该顶板116的中心周围，而使该孔洞130实质上与该上腔室壁32的进气道40重叠。该顶板116接触该腔室24的上壁32。该顶板116接触顶部衬垫118并且由该顶部衬垫118支撑的。该顶板116的厚度为约1毫米至约10毫米。
该顶部衬垫118接触该顶板116的外围边缘128。该顶部衬垫118包含一圆柱，其作用为限制该激发工艺气体，并且保护该清洁腔室24的围壁30不受该激发工艺气体损伤。该衬垫118的厚度为约0.60公分至约0.70公分。在一态样中，该顶板116的外围边缘128搁置在该顶部衬垫118的上缘132上。
一配气板120具有接触该顶部衬垫118的顶表面134、底表面136、以及数个穿过其间的孔140，而孔140是用以将工艺气体分配在该腔室24内。该等孔140是经形塑、订制尺寸、并且在该配气板120表面上以互相间隔开的方式分配设置，以促进该工艺气体均匀输送至该基板22表面。在一态样中，该等孔140包含孔140a-d的四环139a-d，该等孔140a-d的每一个皆拥有不同的直径，如第4C图所示。在一态样中，最内侧为具有直径d的第一孔140a的第一环139a。每一个皆拥有一直径2d的第二孔140b的第二环139b是位于该第一环139a的径向外侧。每一个皆拥有一直径3d的第三孔140c的第三环139c是位于该第二环139b的径向外侧。每一个皆拥有一直径4d的第四孔140d的第四环139d是位于该第三环139c的径向外侧。孔140a-d的此种分布提供工艺气体至该基板22表面的更均匀输送。在一态样中，该等第一孔140a的直径d为约1至约5毫米，而其它孔140b-d是据此尺寸而制作。举例来说，第一环的每一个孔140a的直径为约1至约5毫米；第二环的每一个孔140b的直径为约2至约10毫米；第三环的每一个孔140c的直径为约3至约15毫米；以及第四环的每一个孔140d的直径为约4至约20毫米。在一态样中，直径不同的孔140a-d亦间隔设置而使该第四环139d含有较大量的孔，并让该第三环139c、第二环139b、和第一环139a的孔的数量逐渐变少。该配气板120可由陶瓷构成，例如，氧化铝或氧化硅，并且氧化硅可以是石英。
一底部衬垫122接触该配气板120的底表面136，如第4A和4B图所示。该底部衬垫122也包含一圆柱，其拥有从该圆柱往外延伸的环状外围边缘142。该外围边缘142接触该配气板120的底表面136和该清洁腔室24的侧壁34。
提供一集中环124以将该激发工艺气体集中至该基板22上。该集中环124包含一内凸缘148，其搁置在该支撑底座80的外围边缘上，并拥有倾斜上表面150，该倾斜上表面150是与在该基板外围处的一垂直表面151接合，如第3B和4B图所示。该倾斜上表面150包含约85至约100°之间的角度，例如约95°。该集中环124也具有一脚部152，其在该基板加热底座80的外凸部154周围提高。
上述的工艺套组114部件可包含一过滤材料，例如石英，以吸附来自该激发气体的离子物种，以从该激发气体滤出离子物种。在一态样中，该顶板116、顶部衬垫118、配气板120、底部衬垫122和集中环124的至少一部分表面包含石英，例如一石英涂层。可利用物理气相沉积法或利用热水沉积法(hydrothermal deposition)将石英沉积至这些工艺套组114部件的表面上。这些表面上的石英层的适当厚度是约0.01毫米至约4毫米。在一态样中，该工艺套组114部件112是由石英组成。
该等石英表面74可经配置以提供对于来自该激发清洁气体的氢离子物种的最佳过滤。在一态样中，该等石英表面74包含该陶瓷衬垫60的一部分的内部表面，其连结该气体激发区域54和该清洁腔室24。例如，该陶瓷衬垫60可包含一石英管。在另一态样中，该石英表面74包含一或多个气体分配器的表面，例如该配气板120的上表面。该等石英表面也可包含一设置在该远程区域和该基板之间的线格(wire grid)，例如在该处理区上方，以进一步过滤该活化的清洁气体。
在设备20的清洁腔室24内执行的清洁工艺中，该基板22的温度是经设定以提供减少沉积物中的氧化物的最佳条件，并且甚至可经设定以加速该等含氢自由基和该等沉积物之间的化学反应。例如，该基板22的温度可维持在约0至约500℃，例如约150℃至约450℃，并且甚至是约25℃至约350℃，例如约150℃至约350℃。在一态样中，在该清洁工艺期间施加至该基板22的偏压功率层级可以如预期般的低，因为高的偏压功率层级可增加激发清洁气体内的离子对于该基板22的轰击。适当的偏压功率层级可以是低于约100瓦，例如，约0至约10瓦，并且甚至是约1至约10瓦，并且实质上甚至可以是零。在另一态样中，可施加较高的偏压功率层级以增加清洁速率，例如大于100瓦的偏压功率层级，并且甚至是约100瓦至约200瓦。
更发现到该基板22的清洁可通过执行热处理或退火步骤以从该基板22上除去沉积物来改善。在该热处理步骤中，将该基板22加热至高到足以从该基板22气化材料的温度。也可在该热处理步骤期间提供还原气体流，以抑制氧化物在该基板22上形成。适合的还原气体可包含一含氢气体，例如氢气。该热处理步骤可在无实质激发该还原气体的情况下执行，例如并未实质耦合RF或微波能量至该还原气体，藉以在该激发氢自由基清洁步骤之前提供相对温和的基板22的初始清洁。
在适当的清洁工艺的一态样中，包含约50至约100sccm的氢气(例如300sccm的氢气)以及约0至约10sccm的水(例如3sccm的水)的清洁气体是通过施加约300瓦至约3000瓦(例如1050瓦)的功率层级而在该远程气体激发器52的腔室42中活化。该远程腔室42的压力是维持在低于约10托耳(Torr)，例如约1托耳。施加约0至约100瓦的偏压功率层级(例如50瓦)以偏压该基板22，并且该基板22的温度是维持在约150至约450℃，例如250℃。该清洁工艺是实质上除去该等沉积物以提供一清洁的表面。
在完成该清洁工艺后，将该腔室24内的压力降至低于约10毫托耳的压力，以排空用过的清洁气体和清洁副产物并减少该多腔室设备26被该清洁腔室24污染的可能性。该基板22然后可透过拥有移送机器手(transferrobot)119的基板移送室并在真空下移送至一沉积腔室28b以在刚清洁过的含金属导体表面上沉积一第二含金属导体21，例如铜、铝、钽、钨、氮化钽及氮化钨的至少一者。
适于处理基板22的多腔室设备20包含一或多个工艺腔室28a-d，其可包含该清洁腔室24，如图5所示。该等腔室是安装在一平台上，而平台提供电气、配管、及其它支撑功能。该平台通常支撑一负载锁定室156，以容纳待处理的基板22的基板卡匣158，以及一基板移送室154，该基板移送室154含有一机器手162以将基板22从该基板卡匣158移送至不同的腔室28a-d以进行处理并在处理后将其送回。该等不同的腔室28a-d可包含，例如，清洁腔室24、以在晶片上沉积材料的沉积腔室28b、选择性地，一热处理腔室28c，以及其它处理腔室。例如，在一态样中，该等腔室的一包含该清洁腔室24，以除去形成在该基板22上的含金属导体上的沉积物。在该清洁工艺结束后，可利用该机器手162将该基板22移送至一沉积腔室28d，以在该清洁的基板22上沉积例如含金属导体的材料。该基板22也可由该机器手162移送至能够在于该第一腔室28b内沉积的第一材料上方沉积其它材料(例如另一种含金属导体)的第二沉积腔室28c。该等腔室28a-d是经内连接以在该基板移送室154的侧壁160内形成连续的真空环境，以提供可继续进行而不被中断的工艺，并减少基板22的污染。该移送室154包含拥有一排气口164的侧壁160，以排出气体并维持低压环境，例如低于约10毫托耳的压力，以减少该等腔室的污染。
该多腔室设备20可利用一控制器170透过一硬件接口来操作。该控制器170包含一计算机(未示出)，其拥有与内存和周边计算机组件连接的中央处理单元。较佳地，该内存可包含可移除式储存媒体(例如CD或软盘)、非移除式储存媒体(例如硬盘)，以及随机存取内存。该控制器170可进一步包含数个适配卡，包含，例如，模拟及数字输入及输出板、接口板、以及马达控制板。在一态样中，该控制器170包含一计算机可读程序，该程序可储存在该内存中，例如在非移除式储存媒体或在移除式储存媒体中。该计算机可读程序通常包含工艺控制软件、工艺监控软件、安全系统软件、以及其它控制软件，该工艺控制软件含有程序代码以操作该等腔室28a-d及其部件、该移送室154和机器手162，工艺监控软件是用以监控在该等腔室内执行的工艺。该计算机可读程序可以任何习知计算机可读程序化语言撰写。
虽然已示出并描述本发明的例示实施例，熟知技艺者可设计出合并本发明并且也落在本发明范围内的其它实施例。例如，该腔室24可包含除了具体描述者的外的部件，如对于熟知技艺者而言为显而易见般。此外，下方、上方、底部、顶部、上、下、第一及第二等词及其它相对或位置用词是关于图式内的例示实施例示出，并且是可互换的。因此，附属的权利要求不应受限于较佳态样的描述、材料、或在此描述以示出本发明的空间设置。

Claims (15)

1.一种用于连接远程腔室的出气道至基板清洁腔室的进气道的消耗性(consumable)陶瓷衬垫，该陶瓷衬垫包含：
(a)入口圆柱，其外径是按一定尺寸制作以适配至该远程腔室的该出气道内；
(b)出口圆柱，与该基板清洁腔室的该进气道连接；以及
(c)圆锥形展开部(flare)，将该入口圆柱连结至该出口圆柱。
2.如权利要求1所述的衬垫，其中该圆锥形展开部的长度和该出口圆柱的长度的比例为约1∶2至约1∶8。
3.如权利要求1所述的衬垫，包含一陶瓷材料，该陶瓷材料能够从在该远程气体激发器中产生的激发气体清除离子物种。
4.一种将陶瓷衬垫置入上腔室壁中以将远程腔室的出气道连接至基板清洁腔室的进气道的方法，该陶瓷衬垫包含入口圆柱、出口圆柱及圆锥形展开部，该入口圆柱是按一定尺寸制作以适配至该远程腔室的该出气道内，该出口圆柱与该基板清洁腔室的该进气道连接，该圆锥形展开部是将该入口圆柱连结至该出口圆柱，该方法包含：
(a)将衬垫锁定圆柱设置于该陶瓷衬垫的该出口圆柱上方；
(b)将衬垫固持工具滑入该陶瓷衬垫的该出口圆柱内，该衬垫固持工具的外径是按一定尺寸制作以紧夹该出口圆柱的内径；以及
(c)抓住该衬垫固持工具并且将该陶瓷衬垫的该入口圆柱置入该远程腔室的该出气道内。
5.如权利要求4所述的方法，更包含：
(d)转动该衬垫固持工具以将该衬垫锁定圆柱的环状凸缘锁至该上腔室壁的匹配环状唇部内。
6.一种用于基板清洁腔室的基板加热底座，该基板加热底座包含：
(a)环状板，包含第一盘状物、第二盘状物及铜焊连结，该第一盘状物具有基板承接表面，且该基板承接表面具有数个凹槽的数组，该第二盘状物具有经成形以容纳加热组件的通道，该铜焊连结是连结该第一盘状物和该第二盘状物；
(b)数个陶瓷球，各个该些陶瓷球是设置在该基板承接表面上的凹槽内；以及
(c)加热组件，嵌设在该环状板内。
7.如权利要求6所述的底座，其中该些陶瓷球是由氧化铝、石英、蓝宝石、氮化硅、合成刚石、氧化锆、三氧化二铝(Al2O3)、或其混合物所组成。
8.如权利要求6所述的底座，其中该些陶瓷球的直径为约1至约3毫米。
9.如权利要求8所述的底座，其中该些陶瓷球的直径是大到足以将该基板承接表面维持在比该环状板的一顶表面高约0.01毫米至约0.5毫米。
10.一种用于一基板工艺腔室的配气板，该配气板包含：
(a)第一孔的第一环，各个该些第一孔的直径为d：
(b)第二孔的第二环，各个该些第二孔的直径为2d，且该第二环是位在该第一环的径向外侧；
(c)第三孔的第三环，各个该些第三孔的直径为3d，且该第三环是位在该第二环的径向外侧；以及
(d)第四孔的第四环，各个该些第四孔的直径为4d，且该第四环是位在该第三环的径向外侧。
11.如权利要求10所述的配气板，其中直径d为约1至约5毫米。
12.如权利要求10所述的配气板，其是由陶瓷组成。
13.一种用于基板清洁腔室的工艺套组(process kit)，该基板清洁腔室具有用于支托配气板的腔室盖，且该配气板是面对基板加热底座，该工艺套组包含：
(a)顶板，用以接触该腔室盖，且石英制的该顶板具有用以使工艺气体通过其间的孔洞，并且亦具有外围边缘；
(b)顶部衬垫，接触石英制的该顶板的该外围边缘，并且位于该配气板上方；
(c)底部衬垫，位于该配气板下方；以及
(d)集中环，搁置在该基板加热底座的外围边缘上。
14.如权利要求13所述的工艺套组，其中该顶板、该顶部衬垫、该底部衬垫和该集中环皆包含石英。
15.如权利要求13所述的工艺套组，其中该集中环包含内凸缘，该内凸缘是搁置在该基板加热底座的该外围边缘上，该内凸缘包含倾斜的上表面，且该倾斜的上表面在基板外围处与垂直表面接合。
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CN103890911A (zh) * 2011-10-28 2014-06-25 应用材料公司 气体分散设备
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CN104995723B (zh) * 2013-02-20 2017-09-08 国际电气高丽株式会社 气相蚀刻装置
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CN110468377A (zh) * 2018-05-11 2019-11-19 北京北方华创微电子装备有限公司 腔室及半导体加工设备

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JP2018050059A (ja) 2018-03-29
KR20100037060A (ko) 2010-04-08
US7942969B2 (en) 2011-05-17
CN101730921B (zh) 2011-12-21
JP2016076716A (ja) 2016-05-12
US8980045B2 (en) 2015-03-17
TW200908109A (en) 2009-02-16
JP2010528488A (ja) 2010-08-19
TW201203332A (en) 2012-01-16
WO2008153785A3 (en) 2009-03-19
US20080295872A1 (en) 2008-12-04
WO2008153785A2 (en) 2008-12-18
JP5844722B2 (ja) 2016-01-20
TWI359450B (en) 2012-03-01
KR101593461B1 (ko) 2016-02-12
JP5726521B2 (ja) 2015-06-03
US20150144263A1 (en) 2015-05-28
JP2013080940A (ja) 2013-05-02
KR101550579B1 (ko) 2015-09-07

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