TWI359450B - Substrate cleaning chamber and components - Google Patents

Substrate cleaning chamber and components Download PDF

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TWI359450B
TWI359450B TW097119766A TW97119766A TWI359450B TW I359450 B TWI359450 B TW I359450B TW 097119766 A TW097119766 A TW 097119766A TW 97119766 A TW97119766 A TW 97119766A TW I359450 B TWI359450 B TW I359450B
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ring
holes
diameter
distribution plate
gas distribution
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TW097119766A
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TW200908109A (en
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Martin Riker
Wei W Wang
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32871—Means for trapping or directing unwanted particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0213—Avoiding deleterious effects due to interactions between particles and tube elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H01J2237/0268—Liner tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning In General (AREA)

Description

1359450 【先前 在 基板上 連線、 案可藉 成一圖 去殘餘 製造。 露出下 沉積至 體。例 成暴露 體和接 製程， 但 材料需 先經清 下的導 如，在 剝除光 九、發明說明： 【發明所屬之技術領域】 本發明係有關於基板清：智 q潔腔室與其部件 技術】 例如半導體及顯示器的基板 ，然後蝕刻以形成特徵結構 接觸、通孔、閘極和阻障。 由在該基板上沉積—含金屬 案化抗钱刻材料、蝕刻該導 的光阻、以及在該蝕刻的特 可進一步蝕刻該介電層以形 方的含金屬導電材料或其他 該等經钱刻的孔或溝槽内， 如’在含鋼内連線的形成中 出下方的銅導電材料之接觸 觸孔上沉積一薄的鋼晶種層 以填充該等接觸孔。 是，該含金屬導體上的污染 要該暴露出的導體表面在執 潔。例如，在一中間製程步 體上常會形成原生氧化膜（ 一光阻剝除製程期間，其中 阻，或者是在不同腔室間傳 處理中，層 (feature)， 例如，電氣 的導體、在 體以形成該 徵結構上沉 成接觸孔或 基板層。導 以電氣接觸 ’可蝕刻該 孔。可在該 ，以促進隨 係、形成在該 例如導電内 内連線的圖 該導體上形 内連線 '除 積介電層來 通孔，其暴 電材料然後 該下方的導 介電層以形 暴露出的導 後的銅電锻 物和不期望存在的表面 行後續的製程步驟之前 驟期間暴露在氧氣物種 native oxide film )，例 使用一含氧氣體電漿來 送基板時。該等氧化膜 5 1359450 增加導體表面之間的接觸介面處的電阻。該表面材料也可 能有來自先前製程的殘餘製程沉積物，例如含碳、含矽、 含氟、及含氮製程殘餘物。這些製程沉積物可使空孔（void) 或其他不規則物形成在暴露出的及被沉積的材料之間的介 面處。
基板清潔腔室’也稱為預清潔腔室，係用來在處理之 前以及處理步驟之間從該基板表面清除氧化膜及其他不期 望存在的製程沉積物。在清潔處理期間，該基板係支撐在 該清潔腔室内，並且一經激發的清潔氣體係經形成在一遠 端氣室内並導入該腔室中。該清潔氣體與該等表面殘餘物 反篇並將其除去。在某些製程.中，該基板加熱底座.包.含一. 加熱元件，以在清潔期間控制該基板的溫度。
但是，在此種清潔處理中使用經激發的清潔氣艟的一 個問題在於難以控制該經激發的的清潔氣體之自由基及離 子物種的能量。該清潔氣體和該基板表面之間的較高能量 碰撞可導致對下方基板的損傷。該清潔氣體中較輕的離 子，例如H+，在其穿透該基板表面而損傷下方介電層時也 可能是有害的。因此，希望可以控制導入該製程腔室内的 經激發物種之能量及類型。 另一個問題在於該清潔氣體常蝕除並腐蝕圍繞一氣體 激發器内遠端之該激發區的遠端腔室壁，並且甚至可蝕刻 並腐蝕該清潔腔室内部的部件。此種腐蝕損傷這些部件， 並且若該部件係該腔室之一整合部分，則必須關閉該腔室 以使該部件可在預定的製程週期數量後被翻修或置換，這 6 1359450 疋不理想的。習知的不銹鋼壁和襯墊特別容易受到腐蝕， 而需要頻繁的置換或整修。
又另個問通在該清潔.腔室内接觸該基板的基板加熱 底座在該基板傳送製程期間傳送污染物和製程殘餘物及沉 積物至該基板背部或甚至刮傷該基板時發生。含有加熱元 件的基板加熱底座也可能在該基板表面上提供不均勻的加 熱°擁有由升高的凸形物（niesa)和溝槽組成的基板承接 表面之基板加熱底座容許—熱傳氣體在該基板後方流動以 改善溫度均勻性’但仍傳送不期望存在的製程殘餘物和沉 積物數量至該基板。 …因此，希望具有—種清潔腔室和氣體激發器，其可選 擇性過濾經激發的氣體物種，例如，以從該清潔氣體濾掉 特定離子物種。也希望具有可輕易置換或整修的腔室部 件《更希望具有一種基板加熱底座，其使得傳送該等製程 沉積物至該基板的背部表面所造成基板的污染最小化。也 希望具有一種容許更均勻的基板加熱之基板加熱底座。
【發明内容】 本發明提供一種用於連接一遠端腔室之出氣道至一基 板清潔腔室的進氣道之消耗性（consumable )陶瓷襯塾。 該襯墊包含：一入口圓柱，其外徑係按一定尺寸製作以適 配-至該遠端腔室的出氣道内；/出口圓柱，與該基板清潔 腔室之進氣道連接；以及一圓錐形展開部（flare)，係將該 入口圓柱連结至該出口圓柱。 7 1359450
該襯墊之該圓錐形展開部可包含一圓錐形表面，其 一垂直袖而傾斜約10度〜60度。在一實施例中，該圓 形展開部之長度和該出口圓柱之長度的比例為約1 : 2至 1: 8。在一實施例中，該襯墊之該入口圓柱包含一第一 徑，而該襯墊之該出口圓柱包含一第二直徑，其係第二 徑至少是第一直徑的1.5倍大。在更一實施例中，第一 徑為約1至約4公分，且第二直徑為約2至約8公分。 一實施例中，該襯墊包含一陶瓷材料，該陶瓷材料能夠 在該遠端氣體激發器内產生的激發氣體中清除一離子 種。在一實施例中，該襯墊係由石英、氧化鋁或氮化鋁 成，並且甚至厚度可以為約2毫米至約6毫米。該襯塾 更包含一襯墊鎖定圓柱，該圓柱係按一定尺寸製作以適 至該出口圓柱的外徑周圍。
由 錐 約 直 直 直 在 從 物 组 可 配 接 開 腔 連 該 墊 之 作 本發明提供一種將一陶瓷襯墊置入一上腔室壁以連 一遠端腔室的出氣道至一基板清潔腔室的進氣道之方法 該陶瓷襯墊包含一入口圓柱、一出口圓柱及一圓錐形展 部，其中，入口圓柱係按一定尺寸製作以適配至該遠端 室的出氣道内，出口圓枉則與該基板清潔腔室之進氣道 接，圓錐形展開部係將該入口圓柱連結至該出口圓柱。 方法之步驟如下：（a)將一襯墊鎖定圓柱設置於該陶瓷襯 之出口圓枉上方；（b)將一襯墊固持工具滑入該陶瓷襯墊 出口圓柱内，且該襯墊固持工具的外徑係按一定尺寸製 以緊夾該出口圓柱的内徑；以及（c)抓住該襯墊固持工具 並將該陶瓷襯墊的入口圓柱置入該遠端腔室之出氣道内 8 1359450 在一實施例中，該方法更包含：（d)轉動該襯塾固持工 具以將該鎖定圓柱的環狀凸緣鎖進上腔室壁之匹配環狀唇 部内。
本發明提供一種用於一基板清潔腔室之基板加熱底 座。該基板加熱底座包含：（a) —環狀板，包含：一第一盤 狀物，具有一基板承接表面，且該基板承接表面具有凹槽 之一陣列；一第二盤狀物，具有一經成形以容納加熱元件 之通道；以及一銅焊連結，係連結該第一和第二盤狀物； (b)複數個陶瓷球，每一個皆設置在該基板承接表面上之一 凹槽内；以及（c) 一加熱元件，嵌設在該環狀板内。
該基板加熱底座的銅焊連結可包含一鋁銅焊化合物。 該底座的第一及第二盤狀物可包含鋁。該底座的該等陶瓷 球可由氧化鋁、石英、藍寶石、氮化矽、合成剛石 '氧化 锆、三氧化二鋁、或其混合物組成。在一實施例中，該底 座的陶瓷球之直徑為約1至約3毫米，並且其直徑甚至可 大到足以將該基板承接表面維持在比該環狀板的頂表面高 約0.0 1毫米至約0.5毫米。 本發明提供一種用於一基板製程腔室之配氣板。該配 氣板具有：第一孔之一第一環，各個第一孔之直徑為 d: 第二孔之一第二環，各個第二孔之直徑為2d，且第二環位 於第一環之徑向外側；一第三孔之一第三環，各個第三孔 之直徑為3 d，且第三環係位於第二環之徑向外側；以及第 四孔之一第四環，各個第四孔之直徑為4 d，且第四環係位 於第三環之徑向外側。 9 1359450 在配氣板之一實施例中，直徑d為約1至約5毫米。 該配氣板可由陶瓷組成，並且甚至可包含氧化鋁或氧化矽。
本發明提供一種用於一基板清潔腔室之製程套組，該 基板清潔腔室具有用於支托一配氣板之腔室蓋，且配氣板 係面對一基板加熱底座。該製程套組具有：（a)—頂板，用 以接觸該腔室蓋，該石英頂板具有一用以使製程氣體通過 其間之孔洞，並且具有一外圍邊緣；（b) —頂部襯墊，接觸 該石英頂板的外圍邊緣，並且係位於該配氣板上方；（c) 一底部襯墊，位於該配氣板下方；以及（d) —集中環，搁置 在該基板加熱底座的外圍邊緣上。
在該製程套組之一實施例中，該頂板、頂部襯墊、底 部襯墊和集t環皆包含石英。該製程套組的頂板可包含一 環形盤狀物，其具有一外圍邊緣以及一用以使製程氣體通 過其間之孔洞。該頂板之厚度為約1毫米至約5毫米。在 一實施例中，該製程套組的配氣板係由陶瓷組成，並且甚 至可包含氧化鋁或氧化矽。該製程套組的頂部及底部襯墊 可包含圓柱。該製程套組的集中環可具有一内凸緣，其搁 置在該基.板加熱底座的外圍邊緣上，該凸緣包含一傾斜的 上表面，且該上表面在基板外圍處與一垂直表面接合。在 更一實施例中，該製程套組的傾斜上表面包含約 8 5至約 100°之間的角度。 【實施方式】 第1圖示出一基板設備20之一實施例，其包含適於清 10 1359450
潔一基板22之清潔腔室24。如圖所示之該清潔腔室24係 適於清潔基板22，例如半導體晶圓；但是，該清潔腔室24 可經熟知技藝者調整而適於清潔其他基板2 2，例如平面顯 示器、聚合物面板、或其他電路容納結構。因此，本發明 之範圍不應被限制在此所示的該清潔腔室的例示實施例。 一般來說，該清潔腔室24包含一或多個圍壁30，其可包 含一上壁32、側壁34、以及一底壁36，並且其包圍一處 理區38。從一遠端腔室42提供經激發之清潔氣體至該清 潔腔室24的進氣道40。該清潔氣體與基板22及該腔室24 内的其他表面反應。廢氣及副產物透過一排氣系統44而從 該腔室24排出，排氣系統44可包含一排氣口 46，其接收-來自該處理區38的氣體，並且也可包含一節流閥48，以 控制該腔室2 4内的氣體壓力，以及一或多個排氣幫浦5 0， 例如渦輪分子排氣幫浦。該排氣系統44可以是能夠在該腔 室 24 内保持次大氣壓（sub-atmospheric pressure)。
一種適於在遠端激發該清潔氣體的遠端腔室 42包含 一遠端氣體激.發器52,其耦合能量至一氣體激發區域54。 一清潔氣源56提供一清潔氣體至該氣體激發區域54。可 提供一流量閥58以控制進入該遠端腔室42的清潔氣體之 流速。該氣體激發器52耦合能量至該氣體激發區域54内 的清潔氣體，以形成含有離子及自由基物種的經激發之清 潔氣體。該氣體激發器52可耦合，例如，RF或微波能量 至該清潔氣體。在一態樣中，該遠端氣體激發器52包含一 感應天線5 7，其以，例如，約100瓦至約10千瓦的功率 11 1359450
層級而感應耦合RF能量至該氣體激發區域54内的清潔氣 體。該氣體激發器52也可以是一超環面氣體激發器，以耦 合能量至該遠端氣體激發區域54内的清潔氣體，如同例如 在Smith等人之美國專利第6,150,628號中所描述者，其 在此藉由引用的方式並且以其整體併入本文中。由該環狀 氣體激發器所施加的適當RF功率層級可以從約1000瓦至 約10,000瓦。也可使用包含一微波氣體活化器的遠端氣體 激發器.52,其提供從约300瓦至約5千瓦的微波功率層級。
一消耗性的陶瓷襯墊60連結該遠端氣體激發器52的 出氣道62至該腔室24的進氣道40，如第2A和2B圖所 示者。藉由以該襯塾：6〇的至少r-部分表面覆蓋通道4(L、 62之内表面而保護該等通道40、62，以使該襯墊60的内 表面61暴露在該激發氣體物種下。該襯墊60包含一入口 圓柱64，且入口圓柱64之外徑係按一定尺寸製作以適配 至該遠端氣體激發器的出氣道62内。在一態樣中，該入口 圓柱64之長度為L·，其足夠長而可從該遠端腔室42延伸 出至少約50毫米的距離。且該長度L係足夠短以在該腔 室24的氣體入口 40末端之前至少約1毫米處終止。在一 態樣中，該入口圓柱64之長度L為約100至約1 10毫米， 以及直徑為約1公分至約4公分之間。 一圓錐形展開部66連結該入口圓柱64至一出口圓柱 6 8。該圓錐形展開部6 6包含一管，其直徑係沿著一圓錐形 表面越過該展開部6 6的長度而增加。該圓錐形展開部6 6 具有一上端70和一下端72。該圓錐形展開部66的上端70 12 1359450 之外徑的尺寸係經訂製以對應於在該圓錐形展開部 6 6和 該入口圓柱64之間的接合處之該入口圓柱64的外徑。該 圓錐形展開部66的下端72之外徑的尺寸係經訂製以對應 於在該圓錐形展開部66和該出口圓柱68之間的接合處之 該出口圓柱68的外徑。該圓錐形展開部66的下端72之直 徑係較該圓錐形展開部 6 6的上端 7 0之直徑大至少 1 · 5 倍。在一態樣中，該入口圓柱64、該圓錐形展開部66和 該出口圓柱68係一體連接。
該圓錐形展開部6 6係作為逐漸增加該襯墊6 0在該上 端70及下端72之間的内部空間之直徑，以提供進入該製 程腔室的激發氣體物種更均勻的分配。直徑的驟然政變咸 信會造成來自該襯墊出口之氣體分配不均勻。該圓錐形展 開部66的直徑從該入口圓柱64的第一直徑朝該出口圓柱 68的第二直徑漸成錐狀，以提供沿著該解離的氣體物種之 流動路徑之空間的逐漸增加。在一態樣中，該圓錐形展開 部66包含一圓錐形表面，其係相對於通過該圓錐形展開部 的中心線之垂直軸而呈一角度，此角度為約10度至約60 度。此外，該圓錐形展開部66的長度對於該出口圓柱68 的長度之比例係約1 : 2至約1 : 8。間隔該圓錐形展開部 66在長度上的空間之增加係提供氣體物種在該圓錐形展 開部6 6之出口端7 2處的較佳分配。 該襯墊60也具有一出口圓柱68，其與該基板清潔腔 室24的進氣道40連結。在一態樣中，該出口圓柱68之外 徑係按一定尺寸製作以適配至該基板清潔腔室 24的進氣 13 1359450
道40内。該出口圓柱68之長度為L，其係足夠短以在 清潔腔室24的處理區之前終止，以避免在該腔室環境中 蝕。當該入口圓枉64具有一第一直徑時，該出口圓柱 包含至少較該第一直徑大 1.5倍的第二直徑。在一態 中，該出口圓柱68之直徑為約2公分至约8公分或更典 地約4公分。該出口圓柱68保護該腔室之氣體入口 40 内表面不受該激發氣體物種腐蝕，同時也增加該襯墊的 徑，以減少形成在該遠端區域54内的激發氣體物種之間 碰撞。 該消耗性之襯墊60包含一陶瓷材料，其能夠從在該 端氣體激發器内產生的激發氣體中清除離子物種。例如 該襯墊60可包含石英、氧化鋁或氮化鋁。在一態樣中， 襯墊60包含石英，並且能夠藉由吸附某些氫離子至其内 面 74上而從該激發氣體清除氫離子。咸信該石英内表 74係作為一離子過濾器76，以藉由提供含氫物種可吸附 表面來減少該等自由基的再結合。也相信衝擊該石英表 74的含氫物種將所吸附的含氫自由基釋放進入該激發 體中，從而再生自由的氫自由基。但是，氫離子不會由 英表面74再生，因此，衝擊該石英表面的氫離子會再結 而形成電中性的非離子物種。因此，讓該活化或激發的 潔氣體通過該石英表面 74上方會致使離子物種從該激 清潔氣體濾出，同時保存氫自由基。 譚消耗性襯墊6 0的厚度係根據置換之前該襯墊必 承受的製程週期數量來選擇。該激發氣體能夠蝕刻並腐 該 腐 68 樣 型 的 直 的 遠 該 表 面 的 面 氣 石 合 清 發 須 14 1359450 該襯墊60，因此，該襯墊60必須在預定的製程週期數量 後置換。此外，該襯墊60的吸附性質隨著越來越多的離子 吸附至該陶瓷襯墊表面上而衰減。該襯墊60可承受的週期 數量與該襯墊60的厚度有關。在一態樣中，該襯墊60係 足夠厚以清除至少約30,000個製程週期的離子物種，並且 擁有約2毫米至約6毫米的厚度。
可藉由將陶瓷粉末鑄成預期形狀來製造該襯墊6 0，例 如，藉由冷均壓成型法（cold isostatic pressing)。例如’使 陶瓷粉末與例如有機結合劑聚乙烯醇之液態結合劑結合。 將該混合物置於一冷均壓成型設備之橡膠袋中並均勻施加 壓力在該袋壁上，以緊壓該混合物而形成擁有期望管狀的 陶瓷結構。可藉由將該撓性容器浸泡在水中或藉由其他加 壓方法來施加壓力。可使用中空的管模將鑄造的陶瓷預形 (preform)製成圓柱或環狀，並且可藉由機械加工而進一 步形塑所形成的鑄成之陶瓷預形。然後燒結經過形塑的陶 瓷預形以形成一經燒結的陶瓷。例如，可以約1 3 0 0 °C至約 1 800°C的溫度燒結氧化鋁約48至約96小時，通常在約1 atm的壓力下。可進一步形塑該燒結的陶瓷材料，例如， 藉由機械加工、研磨、雷射鑽孔、或使用其他方法，以提 供預期陶瓷結構。 該襯墊60係利用一襯墊鎖定圓柱71而保持在該腔室 内的適當位置上。該襯墊鎖定圓柱71的尺寸係經訂製以滑 過該襯墊60的出口圓柱68之外徑上方，並且其係靠著該 出口圓柱68之一環狀唇部69擱置，如第2A和2B圖所示。 15 1359450 該襯墊鎖定圓柱71係適配至該襯墊60的出口圓柱68和該 孔洞壁7 3之間，以形成一氣密密封件，如第1圖所示'並 且可由金屬或陶瓷材料製成。
有利地，該襯墊鎖定圓柱71辅助該襯墊60置放進入 該上腔室壁32，並且也輔助該襯墊60於暴露在電漿下一 預定數量的製程週期後之移除以利整修或置換。該襯墊鎖 定圓柱71包含一環狀凸緣73，其從該鎖定圓柱71的一端 延伸出。該環狀凸緣73擁有一平坦的榫75，其係嵌入從 該上腔室壁32延伸出之環狀唇部79上之匹配的平坦榫部 分77,如第2B圖所示。轉動該襯墊鎖定圓柱71以旋轉該 環_狀凸緣.73，因此其滑至該上腔室壁32的環狀唇部79後 方，而在其後方鎖定該環狀凸緣。例如鎖定梢的鎖定阻件 (blocker)(未示出）可嵌入該旋轉式環狀凸緣73的通道内， 以阻擋並停止該凸緣進一步旋轉。
第2B圖也示出一種將該襯墊60嵌入一腔室蓋内以連 結一遠端腔室42的出氣道62至一清潔腔室24的進氣道 40之方法。在此方法中，首先將該襯墊鎖定圓柱71置於 該陶瓷襯墊60的出口圓枉68上方。然後，將一襯墊固持 工具81通入該陶瓷襯墊60的出口圓柱68内，因此該襯墊 固持工具81的外徑緊夾該出口圓柱68的内徑。一使用者 抓住該襯墊固持工具81，然後將該陶瓷襯墊60的入口圓 柱64嵌入該遠端腔室42的出氣道62内。接著轉動該襯墊 固持工具81以如所述般將該襯墊鎖定圓柱71的環狀凸緣 73鎖入該上腔室壁32之匹配的環狀唇部79内。 16 1359450 該腔室24也可選擇性地包含一腔室氣體激發器（未示 出）’其耦合能量至該腔室24的處理區38内的氣體。例如， 該腔室氣體激發器可包含—或多個電極和一感應天線，以 耦合RF能量。 處理區38内的基板22,如第1、3A、3B和4B圖所示c 該底座8〇包含—環狀板82,板82具有一基板承接表3 84’而基板承接表面且士 ^ .
0外具有—凹槽88陣列以及嵌入在言 環狀板82内的加熱 τ 92。該加熱元件92係由一控制| 78控制。該控制器η能约心 月b约相應於以下條件之一而供應？ 變功率層級給該加埶元 ’、、、彳午92 :來自一或多個監控該清潔® 室24或該遠端腔室49 円的情況之偵測器1 06的輸入，資 來自該設備20的使用者 ^贫之輪入。該底座80可選擇性地告 含一電極（未示出），其 力』紅偏壓以將該基板22支托在該肩 座80上或影響該製鞋的从讲 的性質，例如該基板22之離子轟鸯 的程度。施加至該電炻沾伯& 的偏壓也由該控制器7 8控制。
提供-基板加熱底|8〇卩支托該基板清
複數個陶瓷球9〇沾I 的每一個皆設置在該基板承接 84上的一凹槽88内，如笛 第3A圖所示。該等陶瓷球9〇相 彼入在該底座的表面 衣面84内，而使每一個球90之一部分 表面位在該底座表面84 4的+面上方。如此，該等球9" 頂部區144搆成一升高…個不連續區所組成的基板淨 接表面.*中？疋嵌入在該底座8〇的表面84内的球 90之數量。該升高的基板承 土板承接表面86與該底座表面84垂 直分離。也就是說，續斗古α t ，， °同的基板承接表面86比該環狀板 17 1359450
8 2表面高約0.0 1毫米至約0.5毫米。利用一系列的不連續 點，並且在距離該加熱底座80之環狀板82的表面一垂直 距離處支撐該基板22，藉以容許該腔室24内的氣體在加 熱期間在該基板22和該環狀板82表面之間傳熱。與讓該 基板22與該環狀板82的表面接觸相比之下，使該基板22 懸置在該環狀板 82表面上方係允許該基板 22更均勻加 熱，此乃因為熱接觸不會受到該板82的熱傳導性及表面接 觸性質之局部變異的直接影響。 在一態樣中，該等陶瓷球9 0係球狀，並且該等球9 0 的直徑足夠大而可將該基板承接表面保持得比該環狀板的 頂表面高約0.01毫米至約0.5毫米。通常，該等球90之 直徑為約1毫米和約3毫米之間。在一態樣中，該等球體 之直徑為約2毫米，並且從該環狀板82的上表面突出約 0.04毫米。該等陶瓷球90包含氮化矽、氧化锆、藍寶石、 合成剛石、以及氧化鋁的至少一種，並且在一態樣中包含 氧化鋁。
該環狀板82係由兩個盤狀物94、96構成，其係利用 銅焊連結而彼此結合在一起。在一態樣中，如第3 A和3 B 圖所示，該環狀板82包含一第一盤狀物94，其具有升高 的基板承接表面86。該第一盤狀物94厚度為約10毫米至 約3 0毫米，且直徑為約10公分至約7 0公分。該盤狀物 94的直徑係取決於待處理的基板之尺寸。該盤狀物94的 承接表面包含複數個凹槽88，每一個凹槽88皆擁有足以 容納一陶瓷球90的直徑及深度。該凹槽88可利用機械加 18 1359450 工形成，並且較佳地包含往内傾斜約2和約2 0度之間的側 邊，而使該凹槽88的直徑在該第一盤狀物的表面處稍微小 於該陶瓷球90的直徑。以此方式加工的凹槽88能夠在嵌 入陶瓷球9 0之後而將陶瓷球9 0限制在該環狀板8 2的表 面。
所提供之第二盤狀物96之直徑係與該第一盤狀物94 的直徑匹配，且厚度為約6毫米和約1 5毫米之間。該第二 盤狀物96包含經形塑以容納該加熱元件92的通道98，並 且由鋁、銅、鈦、鉬或不銹鋼、或其組合物的至少一種組 成。在一態樣中，該第二盤狀物包含鋁，並且該銅焊連結 材料包含一種鋁銅焊材料。讓加熱元件 9 2包含一電阻組 件，而該電阻組件具有足夠的電阻以將該環狀板82的表面 8 4維持在約室溫至約4 0 0 °C的溫度。該加熱元件9 2係經由 接線柱1 00供電，而接線柱1 00沿著該盤狀物的中心1 02 而延伸通.過該第二盤狀物96。
具有嵌設之加熱元件92的環狀板82可藉由從厚度約 5毫米的鋁片以機械加工一第一盤狀物94來形成。擁有距 離該第一盤狀物94之表面84约2毫米的深度之凹槽88 係在對應於該等鑽孔裝埋的陶瓷球9 0之預期位置上鑽入 該盤狀物94的表面84。從厚度約11.5毫米至約12.5毫米 的鋁片以機械加工一第二盤狀物96,而使得第二盤狀物96 之直徑與該第一盤狀物94的直徑相同。在該盤狀物96内 機械加工一彎曲的通道98，該通道98擁有對應於該加熱 元件92的尺寸之寬度及深度。在該第二盤狀物96的中心 19 1359450 該 件 該 或 覆 側 件 加 冷 板 承 樣 )， 接 22 含 螺 狀 在 桿 1 02周圍鑽設至少一對孔（未示出）。該等鑽孔的直徑比 加熱元件92的接線100之直徑大至少1〇%。該加熱元 Μ係藉由將其壓入該通道98内並將該等接線ι〇〇穿過 等鑽孔來施加至該第二盤狀物96的溝槽側。將一銅焊箔 銅焊化合物置於該第二盤狀物96的溝槽表面上，以使其 蓋該第二盤狀物96的表面。將該第一盤狀物94之無孔 保持在該铜焊表面上，並使該組件對齊，則該第一和第 盤狀物：4、9 6的周圍會彼此重叠。該組件係藉由將該組 置於爐管中、加熱該組件至高於該銅焊材料的熔點並施 壓力，如在熱壓法（hot press)中，來連結在一起。然後 卻該組件以形成一銅焊速結1〇4^ 該％狀板82的背部表面係安裝在用來支樓該環狀 82的支桿11〇上。該支桿11〇包含—桿，且桿具有適於 接該環狀板82的背部表面之承接表面。該桿可包含金屬 例如不銹鋼或鋁，並且可以是實心或空心結構。在一態 中’該支桿110也包含一波紋管以及一舉升機構（未示出 而該舉升機構係適於將該底座80升高及降低以用於承 一基板22、處理該基板22和從該腔室24中移出該基板 的位置。將該環狀板82固定在該支桿11〇上的方法可包 將該支桿110焊接在該環狀板82的底表面上；將一具有 紋的接合器焊接在該環狀板82的底表面上然後將該環 板82螺鎖在該支桿11〇上；或者藉由將一中空管子焊接 該環狀板82的底表面上然後將該中空管子鉗置在該支 110 上》 20 1359450
提供包含數個部件112的製程套組114以容納提供進 入清潔腔室24之激發氣體，並且在該基板表面上分配該氣 體，如第4A和4B圖所示。該製程套組114的部件112可 包含，例如，頂板116、頂部襯墊118、配氣板120、底部 襯墊122、以及集中環124。該製程套組114的該等部件 112可輕易地從該腔室24移出，例如，以置換或修復被腐 蝕的部件，或是調整該清潔腔室24以適應處理不同尺寸的 基板22。該製程套組114的部件可由石英製成，因為石英 能夠有效降低製程氣體自由基的再結合速率，例如氫自由 基。
該頂板116包含一環狀盤狀物126，該盤狀物126具 有一外圍邊缘1 2 8和一孔洞1 3 0，而孔洞1 3 0係使製程氣 體通過其間，如第4A圖所示。該頂板116係按一定尺寸 製作以適配至該基板清潔腔室2 4内，而該孔洞1 3 0之直徑 為約40毫米和約45毫米之間，並且位於該頂板116的中 心周圍，而使該孔洞130實質上與該上腔室壁32的進氣道 40重疊。該頂板116接觸該腔室24的上壁32。該頂板116 接觸頂部襯墊118並且由該頂部襯墊118支撐之。該頂板 1 1 6之厚度為約1毫米至約1 0毫米。 該頂部襯墊118接觸該項板Π6的外圍邊緣128。該 頂部襯墊 118包含一圓柱，其作用為限制該激發製程氣 體，並且保護該清潔腔室24的圍壁30不受該激發製程氣 體損傷。該襯墊1 1 8之厚度為約0.6 0公分至約0.7 0公分。 在一態樣中，該頂板1 1 6的外圍邊緣1 2 8擱置在該頂部襯 21 1359450 墊118的上緣132上。
一配氣板 120具有接觸該頂部襯墊 118之頂表面 1 34、底表面1 36、以及複數個穿過其間的孔1 40，而孔1 40 係用以將製程氣體分配在該腔室24内。該等孔140係經形 塑、訂製尺寸、並且在該配氣板1 20表面上以互相間隔開 的方式分配設置，以促進該製程氣體均勻輸送至該基板22 表面。在一態樣中，該等孔 140 包含孔 140a-d的四環 1 39a-d >該等孔140a-d的每一個皆擁有不同的直徑，如第 4 C圖所示。在_態樣中，最内側為具有直徑d之第一孔 140a的第一環 139a。每一個皆擁有一直徑 2d之第二孔 1 4 0b的第二環1 3 9b係位於該第一環1 3 9a的徑向外側。每 一個皆擁有一直徑3d之第三孔1 40c的第三環1 3 9c係位於 該第二環1 3 9b的徑向外側。每一個皆擁有一直徑4d之第 四孔140d的第四環139d係位於該第三環139c的徑向外 側。孔140 a-d之此種分佈提供製程氣體至該基板22表面 的更均勻輸送。在一態樣中，該等第一孔 140a的直徑d 為約1至約5毫米，而其他孔140b-d係據此尺寸而製作。 舉例來說，第一環之每一個孔140a的直徑為約1至約5 毫米；第二環之每一個孔1 40b的直徑為約2至約1 0毫米； 第三環之每一個孔1 4 0 c的直徑為約3至約1 5毫米；以及 第四環之每一個孔140d的直徑為約4至約20毫米。在一 態樣中，直徑不同的孔 140a-d亦間隔設置而使該第四環 1 3 9d含有較大量的孔，並讓該第三環139c、第二環139b、 和第一環139a之孔的數量逐漸變少。該配氣板120可由陶 22 1359450 瓷構成，例如，氧化鋁或氧化矽，並且氧化矽可以是石英。 一底部襯墊122接觸該配氣板120的底表面136，如 第4A和4B圖所示。該底部襯墊丨22也包含一圓柱，其擁 有從該圓柱往外延伸的環狀外圍邊緣丨42。該外圍邊緣142 接觸該配氣板120的底表面136和該清潔腔室24的側壁 34 ° 提供一集中環丨24以將該激發製程氣體集中至該基板 22上。該集中環124包含一内凸緣148’其擱置在該支揮 底座80的外圍邊緣上，並擁有傾斜上表面ι5〇，該傾斜上 150係與在該基板外圍處之一垂直表面m接合，如 第3B和4β圖所示6該傾斜上表面150包含約85至..約1 .〇 〇 〇 之間的角度，例如約95。。該集中環124也具有一腳部 152 ’其在該基板加熱底座80之外凸部154周圍提高。 上述之製程套組1 1 4部件可包含一過爐材料，例如石 英’以吸附來自該激發氣體的離子物種’以從該激發氣體 據出離子物種。在一態樣中，該頂板116、頂部襯墊118、 配氣板120、底部襯墊122和集中環124之至少一部分表 面包含石英，例如一石英塗層。可利用物理氣相沉積法或 和用熱水沉積法（hydrothermal deposition)將石英沉積至 故些製程套組114部件的表面上。這些表面上之石英層的 適4厚度係約〇. 〇 1毫米至約4毫米。在一態樣中，該製程 套 '組11 4部件〗丨2係由石英組成》 該等石英表面74可經配置以提供對於來自該激發清 潔氣體之氫離子物種的最佳過濾。在一態樣中’該等石英 23 1359450 表面74包含該陶瓷襯墊60之一部分的内部表面，其連 該氣體激發區域54和該清潔腔室24。例如，該陶瓷襯 60可包含一石英管。在另一態樣中，該石英表面74包 一或多個氣體分配器的表面，例如該配氣板 120的上 面。該等石英表面也可包含一設置在該遠端區域和該基 之間的線格（wire grid)，例如在該處理區上方，以進一 過濾該活化的清潔氣體。
結 墊 含 表 板 步 基 最 等 在 約 9 以 氣 可 約 於 ^ Ο 火 驟 的 制 在設備20之清潔腔室24内執行的清潔製程中，該 板2 2的溫度係經設定以提供減少沉積物中的氧化物之 佳條件，並且甚至可經設定以加速該等含氫自由基和該 沉積物之間的化學反應。例如，該.基板2 2的溫度可維持 約0至約5 0 0 °C，例如約1 5 0 °C至約4 5 0 °C，並且甚至是 2 5 °C至約3 5 0 °C，例如約1 5 0 °C至約3 5 0 °C。在一態樣中 在該清潔製程期間施加至該基板22的偏壓功率層級可 如預期般的低，因為高的偏壓功率層級可增加激發清潔 體内的離子對於該基板22的轟擊。適當的偏壓功率層級 以是低於約1 0 0瓦，例如，約0至約1 〇瓦，並且甚至是 1至約10瓦，並且實質上甚至可以是零。在另一態樣中 可施加較高的偏麼功率層級以增加清潔速率，例如大 100瓦的偏壓功率層級，並且甚至是約100瓦至約200瓦 更發現到該基板22的清潔可藉由執行熱處理或退 步驟以從該基板22上除去沉積物來改善。在該熱處理步 中，將該基板22加熱至高到足以從該基板22氣化材料 溫度。也可在該熱處理步驟期間提供還原氣體流，以抑 24 1359450
氧化物在該基板22上形成。適合的還原氣體可！ 氣體，例如氫氣。該熱處理步驟可在無實質激香 體的情況下執行，例如並未實質耦合RF或微注 還原氣體，藉以在該激發氫自由基清潔步驟之肯 溫和的基板2 2之初始清潔。 在適當的清潔製程之一態樣中，包含約50 seem的氫氣（例如300 seem的氫氣）以及約0至 的水（例如3 seem的水）之清潔氣體係藉由施方 至約3000瓦（例如1050瓦）的功率層級而在索 激發器52的腔室42中活化。該遠端腔室42之眉 在'低於約1 0 _托耳（T 〇 r r )，例如約_ 1托耳。施加 1 0 0瓦的偏壓功率層級（例如5 0瓦）以偏壓該基 且該基板2 2的溫度係維持在約1 5 0至約4 5 0 °C ' 。(：。該清潔製程係實質上除去該等沉積物以提供 表面。 在完成該清潔製程後，將該腔室24内的壓力 約1 〇毫托耳的壓力，以排空用過的清潔氣體和清 並減少該多腔室設備26被該清潔腔室24污染的 該基板22然後可透過擁有移送機器手（transfer 之基板移送室並在真空下移送至一沉積腔室28b 潔過的含金屬導體表面上沉積一第二含金屬導體 銅、銘、組、鶴、氮化组及氮化鶴的至少一者。 適於處理基板22的多腔室設備20包含一或 腔室28a-d，其可包含該清潔腔室24，如第5圖 ，含一含氫 -該還原氣 L能量至該 「提供相對 至約 1 0 0 約 1 0 seem f約300瓦 :遠端氣體 :力係維持 約0至約 板22，並 ^例如2 5 0 •一清潔的 降至低於 潔副產物 可能性。 robot)119 以在剛清 2 1，例如 多個製程 所示。該 25 1359450
等腔室係安裝在一平台上，而平台提供電氣、配管 他支撐功能。該平台通常支撐一負載鎖定室156, 待處理的基板22之基板卡匣158,以及一基板移送 該基板移送室154含有一機器手162以將基板22從 卡匣158移送至不同的腔室28a-d以進行處理並在 將其送回。該等不同的腔室28 a-d可包含，例如， 室.2 4、以在晶圓上沉積材料之沉積腔室2 8 b、選擇 一熱處理腔室 28c，以及其他處理腔室。例如，在 中，該等腔室之一包含該清潔腔室24，以除去形成 板22上的含金屬導體上之沉積物。在該清潔製程結 可利用該機器手1 62將該基板22移送至一沉積腔: 以在該清潔的基板22上沉積例如含金屬導體的材另 板22也可由該機器手162移送至能夠在於該第一逛 内沉積的第一材料上方沉積其他材料（例如另一種 導體）的第二沉積腔室28c。該等腔室28 a-d係經 以在該基板移送室154的側壁 160内形成連續的 境，以提供可繼續進行而不被中斷的製程，並減少 的污染。該移送室154包含擁有一排氣口 164的側/ 以排出氣體並維持低壓環境，例如低於约1 〇毫托 力，以減少该等腔室的污染。 該多腔室設備20可利用一控制器170透過一硬 來操作。該控制器170包含一電腦（未示出），其擁 憶體和周邊電腦組件連接的中央處理單元。較佳地 憶體可包含可移除式儲存媒體（例如CD或軟盤）、 、及其 以容納 室 154, 該基板 處理後 清潔腔 性地， 一態樣 在該基 束後， [28d > 。該基 :室 28b 含金屬 .内連接 真空環 基板22 I 160 > 耳的座 體介面 有與記 ，該記 非移除 26 1359450
式儲存媒體（例如硬盤），以及隨機存取記憶體。該控制器 170可進一步包含複數個介面卡，包含，例如，類比及數 位輸入及輸出板、介面板、以及馬達控制板。在一態樣中， 該控制器170包含一電腦可讀程式.，該程式可儲存在該記 憶體中，例如在非移除式儲存媒體或在移除式儲存媒體 中。該電腦可讀程式通常包含製程控制軟體、製程監控軟 體、安全系統軟體、以及其他控制軟體，該製程控制軟體 含有程式碼以操作該等腔室28a-d及其部件、該移送室1 54 和機器手162，製程監控軟體係用以監控在該等腔室内執 行的製程。該電腦可讀程式可以任何習知電腦可讀程式化 語言撰寫。 -
雖然已示出並描述本發明之例示實施例，熟知技藝者 可設計出合併本發明並且也落在本發明範圍内之其他實施 例。例如，該腔室24可包含除了具體描述者之外的部件， 如對於熟知技藝者而言為顯而易見般。此外，下方、上方、 底部、頂部、上、下、第一及第二等詞及其他相對或位置 用詞係關於圖式内的例示實施例示出，並且是可互換的。 因此，附屬的申請專利範圍不應受限於較佳態樣的描述、 材料、或在此描述以示出本發明之空間設置。 【圖式簡單說明】 可關於上面描述、如下附屬申請專利範圍、以及附圖 而對本發明之這些特徵結構、態樣、及優勢有更佳的了解， 其示出本發明之範例。但是，應了解每一個特徵結構均可 27 1359450 在本發明中廣泛使用，而不僅是在特定圖式背景中，並且 本發明包含這些特徵結構的任意組合，其中： 第1圖係包含基板清潔腔室之基板製程設備之一實施 例的剖面側視圖； 第2A圖係利用一襯墊鎖定圓柱和襯墊固持工具而適 配入該清潔腔室的頂板内之消耗性陶瓷襯墊的分解透視 Γ5Γ| · 圖，
第2B圖係適配入該清潔腔室的頂板内之陶瓷襯墊和 襯墊鎖定圓柱的簡要側視圖； 第3A圖係具有嵌設在該基板承接表面内的陶瓷球之 基板加·熱底座_的透視圖； ·- 第 3B圖係具有以銅焊連結的第一和第二盤狀物，以 及一嵌設的加熱元件之第3A圖的基板加熱底座之剖面簡 要圖， 第4A圖係一製程套組和配氣板的分解透視圖；
第4B圖係一清潔腔室内之製程套組、配氣板和基板 加熱底座的簡要部分剖面圖； 第4C圖係該配氣板的上視圖；以及 第5圖係包含基板清潔腔室之基板製程設備的簡要 圖。 【主要元件符號說明】 20 基板設備 22 基板 2 4 清潔腔室 28a-d 腔室 28 1359450
26 多腔室設備 30 圍壁 32 上壁/上腔室壁 34 側壁 36 底壁 38 處理區 40 進氣道/氣體入口 42 (遠端）腔室 44 排氣系統 46 排氣口 48 節流閥 50 排氣幫浦 52 氣體激發器 54 (氣體激發）區域 56 清潔氣源 57 感應天線 58 流量閥 60 襯塾 61 内表面 62 出氣道 64 入口圓枉 66 展開部 68 出口圓柱 69、 79 唇部 70 上端 71 鎖定圓柱 72 下端/出口端 73 壁/凸緣 74 表面 75 榫 76 離子過濾器 77 榫部分 78、 170 控制器 80 底座 8 1 襯塾固持工具 82 板 84、 86 (基板承接）表面 88 凹槽 90 球 92 加熱元件 94、 96 盤狀物 98 通道 1 00 接線（柱） 1 02 中心 1 04 銅焊連結 106 偵測器 110 支桿 112 部件 29 1359450
114 製程套組 116 頂 板 118 頂部襯墊 119 機 器手 120 配氣板 122 底部襯墊 124 集中環 126 盤狀物 128 ' 142 外圍邊緣 130 孔 洞 132 上緣 134 頂 表面 136 底表面 139a- d 環 140 孔 140a- d 孔 144 頂部區 148 内 凸緣 150 傾斜上表面 15 1 垂 直表面 152 腳部 154 外 凸部 156 負載鎖定室 158 卡 匣 160 側壁 162 機 器手 164 排氣口
30

Claims (1)

1359450 第μ丨·號專利案/«〇年r月修正^年^月修正本 十、申請專利範圍· 1. 一種用於一基板製程腔室之配氣板，該配氣板包含： (a) 第一孔之一第一環，各個該些第一孔之直徑為d ; (b) 第二孔之一第二環，各個該些第二孔之直徑為2d， 且該第二環係位在該第一環之徑向外側； (c) 第三孔之一第三環，各個該些第三孔之直徑為3 d， 且該第三環係位在該第二環之徑向外側；以及 (d) 第四孔之一第四環，各個該些第四孔之直徑為4d， 且該第四環係位在該第三環之徑向外側。 -V ▲▲ ' 2. 如申請專利範圍第1項所述之配氣板，其中直徑d為約 Γ至約5毫米。 3.如申請專利範圍第1項所述之配氣板，其中該第二孔具 有一直徑為約2至約1 0毫米。 4 ·如申請專利範圍第1項所述之配氣板，其中該第三孔具 有一直徑為約3至約1 5 _米。 5 ·如申請專利範圍第1項所述之配氣板，其中該第四孔具 有一直徑為約4至約20.毫米。 31 1359450 6.如申請專利範圍第1項所述之配氣板，其係由陶莞组 成0 7.如申請專利範圍第6項所述之配氣板，其中上述之陶瓷 包含氧化鋁或氧化矽。 8.如申請專利範圍第1項所述之配氣板，其係由石英組
9.如申請專利範圍第1項所述之配氣板，其中該第四環包 含比該第三環大量的孔。 1 〇.如申請專利範圍第1項所述之配氣板，其中該第一環或 第二環包含比該第四環小量的孔。
11. 一種用於一基板製程腔室之配氣板，該配氣板包含： (a) 第一孔之一第一環，各個該些第一孔具有一直徑 d，其為約1至約5毫米； (b) 第二孔之一第二環，各個該些第二孔具有一直徑 2 d，其為約2至約1 0毫米，且該第二環係位在該第一環之 徑向外側； (c)第三孔之一第三環，各個該些第三孔具有一直徑 3 d，其為約3至約1 5毫米，且該第三環係位在該第二環之 32 1359450 徑向外側；以及 (d)第四孔之一第四環，各個該些第四孔具有一直徑 4d，其為約4至約20毫米，且該第四環係位在該第三環之 徑向外側。 1 2 ·如申請專利範圍第1 1項所述之配氣板，其係由陶瓷組 成。
1 3 .如申請專利範圍第1 1項所述之配氣板，其中上述之陶 瓷包含氧化鋁或氧化矽。 1 4 ·如申請專利範圍第11項所述之配氣板，其係由石英組 成。 1 5.如申請專利範圍第1 1項所述之配氣板，其中該第四環 包含比該第三環大量的孔。
1 6.如申請專利範圍第1 1項所述之配氣板，其中該第一環 或第二環包含比該第四環小量的孔。 17.—種用於一基板製程腔室之配氣板，該配氣板包含： (a)第一孔之一第一環，各個該些第一孔具有一直徑為 約1至約5毫米； 33 1359450 (b) 第二孔之一第二環，各個該些第二孔具有一直徑為 約2至約1 0毫米，且該第二環係位在該第一環之徑向外側； (c) 第三孔之一第三環，各個該些第三孔具有一直徑為 約3至約1 5毫米，且該第三環係位在該第二環之徑向外 侧；以及 (d) 第四孔之一第四環，各個該些第四孔具有一直徑為 約4至約2 0毫米，且該第四環係位在該第三環之徑向外側。
1 8 .如申請專利範圍第1 7項所述之配氣板，其係由陶瓷組 成。 1 9 .如申請專利範圍第1 7項所述之配氣板，其中上述之陶 瓷包含氧化鋁或氧化矽。
2 0 ·如申請專利範圍第1 7項所述之配氣板，其係由石英組 成。 2 1 .如申請專利範圍第1 7項所述之配氣板，其中該第四環 包含比該第三環大量的孔。 22.如申請專利範圍第17項所述之配氣板，其中該第一環 或第二環包含比該第四環小量的孔。 34
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US7942969B2 (en) 2011-05-17
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US20080295872A1 (en) 2008-12-04
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US20150144263A1 (en) 2015-05-28
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