DE68909665T2 - Verfahren zur Herstellung dielektrischer Keramik für elektrostatische Haltevorrichtungen. - Google Patents

Verfahren zur Herstellung dielektrischer Keramik für elektrostatische Haltevorrichtungen.

Info

Publication number
DE68909665T2
DE68909665T2 DE89304049T DE68909665T DE68909665T2 DE 68909665 T2 DE68909665 T2 DE 68909665T2 DE 89304049 T DE89304049 T DE 89304049T DE 68909665 T DE68909665 T DE 68909665T DE 68909665 T2 DE68909665 T2 DE 68909665T2
Authority
DE
Germany
Prior art keywords
oxide
terms
weight
dielectric ceramics
electrostatic chucks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89304049T
Other languages
English (en)
Other versions
DE68909665D1 (de
Inventor
Toshiya C O Toto Limi Watanabe
Tetsuo C O Toto Li Kitabayashi
Chiaki C O Toto Limit Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toto Ltd
Original Assignee
Toto Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toto Ltd filed Critical Toto Ltd
Publication of DE68909665D1 publication Critical patent/DE68909665D1/de
Application granted granted Critical
Publication of DE68909665T2 publication Critical patent/DE68909665T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
    • C04B35/111—Fine ceramics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means
DE89304049T 1988-04-26 1989-04-24 Verfahren zur Herstellung dielektrischer Keramik für elektrostatische Haltevorrichtungen. Expired - Fee Related DE68909665T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10484488 1988-04-26

Publications (2)

Publication Number Publication Date
DE68909665D1 DE68909665D1 (de) 1993-11-11
DE68909665T2 true DE68909665T2 (de) 1994-02-10

Family

ID=14391639

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89304049T Expired - Fee Related DE68909665T2 (de) 1988-04-26 1989-04-24 Verfahren zur Herstellung dielektrischer Keramik für elektrostatische Haltevorrichtungen.

Country Status (6)

Country Link
US (1) US5104834A (de)
EP (1) EP0339903B1 (de)
JP (1) JP2733091B2 (de)
AT (1) ATE95513T1 (de)
CA (1) CA1336476C (de)
DE (1) DE68909665T2 (de)

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JPH043956A (ja) * 1990-04-20 1992-01-08 Fujitsu Ltd 静電吸着装置
JPH06737A (ja) * 1991-03-29 1994-01-11 Shin Etsu Chem Co Ltd 静電チャック基板
EP0564982A3 (en) * 1992-04-04 1995-09-13 Hoechst Ceram Tec Ag Ceramic alumina body with high metallization adherence
JP2938679B2 (ja) * 1992-06-26 1999-08-23 信越化学工業株式会社 セラミックス製静電チャック
US5600530A (en) * 1992-08-04 1997-02-04 The Morgan Crucible Company Plc Electrostatic chuck
US5413360A (en) * 1992-12-01 1995-05-09 Kyocera Corporation Electrostatic chuck
US5384681A (en) * 1993-03-01 1995-01-24 Toto Ltd. Electrostatic chuck
JPH06326175A (ja) * 1993-04-22 1994-11-25 Applied Materials Inc 集積回路処理装置において使用されるウエハサポートの誘電材への保護被覆とその形成方法
US5511799A (en) * 1993-06-07 1996-04-30 Applied Materials, Inc. Sealing device useful in semiconductor processing apparatus for bridging materials having a thermal expansion differential
US5467252A (en) * 1993-10-18 1995-11-14 Motorola, Inc. Method for plating using nested plating buses and semiconductor device having the same
JPH07153825A (ja) * 1993-11-29 1995-06-16 Toto Ltd 静電チャック及びこの静電チャックを用いた被吸着体の処理方法
US5801915A (en) * 1994-01-31 1998-09-01 Applied Materials, Inc. Electrostatic chuck having a unidirectionally conducting coupler layer
US5729423A (en) * 1994-01-31 1998-03-17 Applied Materials, Inc. Puncture resistant electrostatic chuck
US6278600B1 (en) 1994-01-31 2001-08-21 Applied Materials, Inc. Electrostatic chuck with improved temperature control and puncture resistance
TW288253B (de) * 1994-02-03 1996-10-11 Aneruba Kk
US5792562A (en) * 1995-01-12 1998-08-11 Applied Materials, Inc. Electrostatic chuck with polymeric impregnation and method of making
US5671116A (en) * 1995-03-10 1997-09-23 Lam Research Corporation Multilayered electrostatic chuck and method of manufacture thereof
JP2971369B2 (ja) * 1995-08-31 1999-11-02 トーカロ株式会社 静電チャック部材およびその製造方法
US5835333A (en) * 1995-10-30 1998-11-10 Lam Research Corporation Negative offset bipolar electrostatic chucks
JP3670416B2 (ja) * 1995-11-01 2005-07-13 日本碍子株式会社 金属包含材および静電チャック
US5812361A (en) * 1996-03-29 1998-09-22 Lam Research Corporation Dynamic feedback electrostatic wafer chuck
JP3457495B2 (ja) * 1996-03-29 2003-10-20 日本碍子株式会社 窒化アルミニウム焼結体、金属埋設品、電子機能材料および静電チャック
AU2451897A (en) * 1996-04-10 1997-10-29 Virginia Tech Intellectual Properties, Inc. Process for providing a glass-ceramic dielectric layer on an electrically conductive substrate and electrostatic chucks made by the process
US5761023A (en) * 1996-04-25 1998-06-02 Applied Materials, Inc. Substrate support with pressure zones having reduced contact area and temperature feedback
US6108189A (en) 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
TW303505B (en) * 1996-05-08 1997-04-21 Applied Materials Inc Substrate support chuck having a contaminant containment layer and method of fabricating same
US6175485B1 (en) * 1996-07-19 2001-01-16 Applied Materials, Inc. Electrostatic chuck and method for fabricating the same
US5864459A (en) * 1996-08-14 1999-01-26 Virginia Tech Intellectual Properties, Inc. Process for providing a glass dielectric layer on an electrically conductive substrate and electrostatic chucks made by the process
WO1998047176A1 (en) * 1997-04-11 1998-10-22 The Morgan Crucible Company Plc Composite ceramic dielectrics
JPH11157953A (ja) * 1997-12-02 1999-06-15 Nhk Spring Co Ltd セラミックスと金属との構造体及びそれを用いた静電チャック装置
US6641939B1 (en) 1998-07-01 2003-11-04 The Morgan Crucible Company Plc Transition metal oxide doped alumina and methods of making and using
US6259592B1 (en) 1998-11-19 2001-07-10 Applied Materials, Inc. Apparatus for retaining a workpiece upon a workpiece support and method of manufacturing same
US6263829B1 (en) 1999-01-22 2001-07-24 Applied Materials, Inc. Process chamber having improved gas distributor and method of manufacture
US6273958B2 (en) 1999-06-09 2001-08-14 Applied Materials, Inc. Substrate support for plasma processing
JP4530380B2 (ja) 1999-11-29 2010-08-25 日本特殊陶業株式会社 スパークプラグ用絶縁体及びそれを備えるスパークプラグ
US6478924B1 (en) 2000-03-07 2002-11-12 Applied Materials, Inc. Plasma chamber support having dual electrodes
US6598559B1 (en) 2000-03-24 2003-07-29 Applied Materials, Inc. Temperature controlled chamber
US6581275B2 (en) 2001-01-22 2003-06-24 Applied Materials Inc. Fabricating an electrostatic chuck having plasma resistant gas conduits
US6682627B2 (en) 2001-09-24 2004-01-27 Applied Materials, Inc. Process chamber having a corrosion-resistant wall and method
US6986865B2 (en) * 2002-07-10 2006-01-17 Watlow Electric Manufacturing Company Method for manufacturing an electrostatic chuck
JP4248833B2 (ja) * 2002-09-12 2009-04-02 株式会社ソディック セラミックス及びその製造方法
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
US7670436B2 (en) 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7762114B2 (en) * 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
US9127362B2 (en) * 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US8647484B2 (en) * 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
JP2007266289A (ja) * 2006-03-28 2007-10-11 Tdk Corp 積層型セラミック電子部品およびその製造方法
US20070283884A1 (en) * 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
JP5872998B2 (ja) * 2012-04-26 2016-03-01 日本特殊陶業株式会社 アルミナ焼結体、それを備える部材、および半導体製造装置
JP6277015B2 (ja) * 2014-02-28 2018-02-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10246375B2 (en) 2016-03-30 2019-04-02 Skyworks Solutions, Inc. Multi-phase high thermal conductivity composite dielectric materials
GB2583911A (en) 2019-05-03 2020-11-18 Morgan Advanced Ceramics Inc High density corrosion resistant layer arrangement for electrostatic chucks

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4020234A (en) * 1974-01-02 1977-04-26 International Business Machines Corporation High-alumina content compositions containing BaO-MgO-SiO2 glass and sintered ceramic articles made therefrom
US4109377A (en) * 1976-02-03 1978-08-29 International Business Machines Corporation Method for preparing a multilayer ceramic
JPS6059104B2 (ja) * 1982-02-03 1985-12-23 株式会社東芝 静電チヤツク板
JPS59152636A (ja) * 1983-02-21 1984-08-31 Toshiba Corp 静電チャック装置の製造方法
JPS60127259A (ja) * 1983-12-09 1985-07-06 松下電器産業株式会社 薄膜用基板の製造方法
JPS60176967A (ja) * 1984-02-21 1985-09-11 日本特殊陶業株式会社 アルミナ磁器組成物
FR2568722B1 (fr) * 1984-08-03 1987-10-23 Thomson Csf Substrat en ceramique dielectrique et procede d'obtention
JPS61179009A (ja) * 1985-01-31 1986-08-11 日本特殊陶業株式会社 高周波誘電体磁器
JPS61211907A (ja) * 1985-03-15 1986-09-20 日本特殊陶業株式会社 アルミナ磁器組成物
JPS623066A (ja) * 1985-06-27 1987-01-09 株式会社東芝 セラミツク組成物
JPH0697675B2 (ja) * 1985-10-21 1994-11-30 東陶機器株式会社 静電チャック基盤
US4678683A (en) * 1985-12-13 1987-07-07 General Electric Company Process for cofiring structure comprised of ceramic substrate and refractory metal metallization
JPS62229711A (ja) * 1986-03-31 1987-10-08 日本特殊陶業株式会社 アルミナ磁器組成物
US4769294A (en) * 1986-11-26 1988-09-06 Ceramics Process Systems Corp. Alumina materials for low temperature co-sintering with refractory metallization

Also Published As

Publication number Publication date
JPH0222166A (ja) 1990-01-25
DE68909665D1 (de) 1993-11-11
JP2733091B2 (ja) 1998-03-30
US5104834A (en) 1992-04-14
CA1336476C (en) 1995-08-01
EP0339903A1 (de) 1989-11-02
EP0339903B1 (de) 1993-10-06
ATE95513T1 (de) 1993-10-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee