EP0803900A3 - Surface preparation to enhance the adhesion of a dielectric layer - Google Patents

Surface preparation to enhance the adhesion of a dielectric layer Download PDF

Info

Publication number
EP0803900A3
EP0803900A3 EP97302078A EP97302078A EP0803900A3 EP 0803900 A3 EP0803900 A3 EP 0803900A3 EP 97302078 A EP97302078 A EP 97302078A EP 97302078 A EP97302078 A EP 97302078A EP 0803900 A3 EP0803900 A3 EP 0803900A3
Authority
EP
European Patent Office
Prior art keywords
dielectric material
undercut
surface structure
dielectric
undercut formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP97302078A
Other languages
German (de)
French (fr)
Other versions
EP0803900A2 (en
Inventor
Arik Donde
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of EP0803900A2 publication Critical patent/EP0803900A2/en
Publication of EP0803900A3 publication Critical patent/EP0803900A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Abstract

The present invention discloses a surface structure and a method for preparation of the structure. The surface structure comprises a dielectric material in intimate contact with an underlying material (520) having undercut formations (526) therein which enhance the adhesion of the dielectric material to the surface of the underlying material. Preferred applications for the surface structure include semiconductor processing apparatus such as process chamber interior surfaces and the surfaces of functional elements used within the chamber. Functional elements include an electronic chuck used to hold a semiconductor substrate in place within the process chamber.
The surface structure comprises at least one, and preferably a plurality of undercut formations (526) which facilitate mechanical locking of a dielectric layer applied thereover. Preferably the undercut formation is at least one groove which traverses the surface to which the dielectric material is to be applied. The precise shape of the undercut formation (groove) depends upon the dielectric material which is to be applied to the surface structure, since the dielectric material must be capable of making intimate contact with the surface of the structure. Particularly for high temperature applications, ceramic materials are the dielectric material of choice. The most commonly used material for the interior of semiconductor processing chambers and functional elements used therein is aluminum or an aluminum-comprising alloy.
When the surface to which a dielectric coating or layer is to be applied is metallic (and particularly aluminum), grit blasting is an advantageous method for fabrication of an undercut formation upon such a surface. The method of grit blasting used for fabrication of the undercut formation of the present invention includes the use of grit having a particular particle size range which is applied at a particular angle of incidence (α) to the surface being prepared, at a pressure and for a time period sufficient to create an undercut formation having the desired contour.
EP97302078A 1996-04-26 1997-03-26 Surface preparation to enhance the adhesion of a dielectric layer Withdrawn EP0803900A3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US639156 1984-08-09
US63915696A 1996-04-26 1996-04-26

Publications (2)

Publication Number Publication Date
EP0803900A2 EP0803900A2 (en) 1997-10-29
EP0803900A3 true EP0803900A3 (en) 1999-12-29

Family

ID=24562960

Family Applications (1)

Application Number Title Priority Date Filing Date
EP97302078A Withdrawn EP0803900A3 (en) 1996-04-26 1997-03-26 Surface preparation to enhance the adhesion of a dielectric layer

Country Status (4)

Country Link
US (1) US5910338A (en)
EP (1) EP0803900A3 (en)
JP (1) JPH1050812A (en)
KR (1) KR970072157A (en)

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EP0803900A3 (en) * 1996-04-26 1999-12-29 Applied Materials, Inc. Surface preparation to enhance the adhesion of a dielectric layer
US6177023B1 (en) 1997-07-11 2001-01-23 Applied Komatsu Technology, Inc. Method and apparatus for electrostatically maintaining substrate flatness
US6141870A (en) 1997-08-04 2000-11-07 Peter K. Trzyna Method for making electrical device
US6683756B1 (en) 1999-06-04 2004-01-27 Seagate Technology Llc Actuator assembly with enhanced bonding surface for bonding a voice coil to a yoke
US6273788B1 (en) * 1999-07-23 2001-08-14 General Electric Company Sustained surface scrubbing
US6620520B2 (en) * 2000-12-29 2003-09-16 Lam Research Corporation Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof
JP2002307312A (en) * 2001-04-11 2002-10-23 Olympus Optical Co Ltd Polishing device, polishing method, control program for letting computer execute polishing, and recording medium
US7026009B2 (en) * 2002-03-27 2006-04-11 Applied Materials, Inc. Evaluation of chamber components having textured coatings
WO2004013368A1 (en) 2002-08-02 2004-02-12 Mitsubishi Heavy Industries, Ltd. Method for forming heat shielding film, masking pin and tail pipe of combustor
US6902628B2 (en) * 2002-11-25 2005-06-07 Applied Materials, Inc. Method of cleaning a coated process chamber component
US7964085B1 (en) 2002-11-25 2011-06-21 Applied Materials, Inc. Electrochemical removal of tantalum-containing materials
US20060105182A1 (en) * 2004-11-16 2006-05-18 Applied Materials, Inc. Erosion resistant textured chamber surface
US7151658B2 (en) * 2003-04-22 2006-12-19 Axcelis Technologies, Inc. High-performance electrostatic clamp comprising a resistive layer, micro-grooves, and dielectric layer
US8372205B2 (en) 2003-05-09 2013-02-12 Applied Materials, Inc. Reducing electrostatic charge by roughening the susceptor
US20040221959A1 (en) 2003-05-09 2004-11-11 Applied Materials, Inc. Anodized substrate support
JP4331985B2 (en) * 2003-06-30 2009-09-16 株式会社不二製作所 Workpiece polishing method and jet guiding means and jet regulating means used in the method
US7045072B2 (en) * 2003-07-24 2006-05-16 Tan Samantha S H Cleaning process and apparatus for silicate materials
US20050048876A1 (en) * 2003-09-02 2005-03-03 Applied Materials, Inc. Fabricating and cleaning chamber components having textured surfaces
US7910218B2 (en) * 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
US7264679B2 (en) * 2004-02-11 2007-09-04 Applied Materials, Inc. Cleaning of chamber components
US20050238807A1 (en) * 2004-04-27 2005-10-27 Applied Materials, Inc. Refurbishment of a coated chamber component
US7618769B2 (en) * 2004-06-07 2009-11-17 Applied Materials, Inc. Textured chamber surface
US7300707B2 (en) * 2004-10-25 2007-11-27 Creative Technology Corporation Aluminium composite structure having a channel therein and method of manufacturing the same
US7670436B2 (en) 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
US7579067B2 (en) * 2004-11-24 2009-08-25 Applied Materials, Inc. Process chamber component with layered coating and method
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7762114B2 (en) 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US20070125646A1 (en) * 2005-11-25 2007-06-07 Applied Materials, Inc. Sputtering target for titanium sputtering chamber
US7869184B2 (en) * 2005-11-30 2011-01-11 Lam Research Corporation Method of determining a target mesa configuration of an electrostatic chuck
US8173228B2 (en) 2006-01-27 2012-05-08 Applied Materials, Inc. Particle reduction on surfaces of chemical vapor deposition processing apparatus
US20070283884A1 (en) * 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US20090023013A1 (en) * 2007-07-17 2009-01-22 Ford Motor Company Spray formed thin layers having fine features
KR101125885B1 (en) * 2007-07-31 2012-03-22 어플라이드 머티어리얼스, 인코포레이티드 Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing
JP5793014B2 (en) * 2011-07-21 2015-10-14 株式会社不二製作所 Side polishing method for hard brittle material substrate
US10727092B2 (en) * 2012-10-17 2020-07-28 Applied Materials, Inc. Heated substrate support ring
US9101954B2 (en) 2013-09-17 2015-08-11 Applied Materials, Inc. Geometries and patterns for surface texturing to increase deposition retention
US11955362B2 (en) 2017-09-13 2024-04-09 Applied Materials, Inc. Substrate support for reduced damage substrate backside
AU2020417294B2 (en) 2019-12-31 2024-04-04 Cold Jet, Llc Method and apparatus for enhanced blast stream

Citations (13)

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US2970393A (en) * 1957-03-29 1961-02-07 David A Freeman Press plate and method of making same
US4480284A (en) * 1982-02-03 1984-10-30 Tokyo Shibaura Denki Kabushiki Kaisha Electrostatic chuck plate
JPH0445252A (en) * 1990-06-11 1992-02-14 Mitsubishi Heavy Ind Ltd Coating method using exo-electron emission
JPH04283075A (en) * 1990-12-26 1992-10-08 Kawasaki Steel Corp Sand blast device
US5350479A (en) * 1992-12-02 1994-09-27 Applied Materials, Inc. Electrostatic chuck for high power plasma processing
US5419971A (en) * 1993-03-03 1995-05-30 General Electric Company Enhanced thermal barrier coating system
WO1995020838A1 (en) * 1994-01-31 1995-08-03 Applied Materials, Inc. Electrostatic chuck with conformal insulator film
JPH07307377A (en) * 1993-12-27 1995-11-21 Shin Etsu Chem Co Ltd Ceramic heater with electrostatic chuck
EP0707091A1 (en) * 1994-09-16 1996-04-17 Praxair S.T. Technology, Inc. Zirconia-based tipped blades having macrocracked structure and process for producing it
EP0762491A2 (en) * 1995-08-31 1997-03-12 Tocalo Co. Ltd. Electrostatic chuck member and a method of producing the same
EP0803904A2 (en) * 1996-04-25 1997-10-29 Applied Materials, Inc. Substrate support
US5720818A (en) * 1996-04-26 1998-02-24 Applied Materials, Inc. Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck
US5910338A (en) * 1996-04-26 1999-06-08 Applied Materials, Inc. Surface preparation to enhance adhesion of a dielectric layer

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US5558789A (en) * 1994-03-02 1996-09-24 University Of Florida Method of applying a laser beam creating micro-scale surface structures prior to deposition of film for increased adhesion
US5622753A (en) * 1996-04-08 1997-04-22 Ford Motor Company Method of preparing and coating aluminum bore surfaces

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2970393A (en) * 1957-03-29 1961-02-07 David A Freeman Press plate and method of making same
US4480284A (en) * 1982-02-03 1984-10-30 Tokyo Shibaura Denki Kabushiki Kaisha Electrostatic chuck plate
JPH0445252A (en) * 1990-06-11 1992-02-14 Mitsubishi Heavy Ind Ltd Coating method using exo-electron emission
JPH04283075A (en) * 1990-12-26 1992-10-08 Kawasaki Steel Corp Sand blast device
US5350479A (en) * 1992-12-02 1994-09-27 Applied Materials, Inc. Electrostatic chuck for high power plasma processing
US5419971A (en) * 1993-03-03 1995-05-30 General Electric Company Enhanced thermal barrier coating system
US5665260A (en) * 1993-12-27 1997-09-09 Shin-Etsu Chemical Co., Ltd. Ceramic electrostatic chuck with built-in heater
JPH07307377A (en) * 1993-12-27 1995-11-21 Shin Etsu Chem Co Ltd Ceramic heater with electrostatic chuck
WO1995020838A1 (en) * 1994-01-31 1995-08-03 Applied Materials, Inc. Electrostatic chuck with conformal insulator film
EP0707091A1 (en) * 1994-09-16 1996-04-17 Praxair S.T. Technology, Inc. Zirconia-based tipped blades having macrocracked structure and process for producing it
EP0762491A2 (en) * 1995-08-31 1997-03-12 Tocalo Co. Ltd. Electrostatic chuck member and a method of producing the same
EP0803904A2 (en) * 1996-04-25 1997-10-29 Applied Materials, Inc. Substrate support
US5720818A (en) * 1996-04-26 1998-02-24 Applied Materials, Inc. Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck
US5910338A (en) * 1996-04-26 1999-06-08 Applied Materials, Inc. Surface preparation to enhance adhesion of a dielectric layer

Non-Patent Citations (4)

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Title
DATABASE WPI DERWENT PUBLICATIONS LTD., LONDON, GB; XP002118364 *
PATENT ABSTRACTS OF JAPAN vol. 016, no. 228 (C - 0944) 27 May 1992 (1992-05-27) *
PATENT ABSTRACTS OF JAPAN vol. 017, no. 083 (M - 1369) 18 February 1993 (1993-02-18) *
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 03 29 March 1996 (1996-03-29) *

Also Published As

Publication number Publication date
KR970072157A (en) 1997-11-07
US5910338A (en) 1999-06-08
JPH1050812A (en) 1998-02-20
EP0803900A2 (en) 1997-10-29

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