JPH03252382A - Aluminum nitride substrate and production thereof - Google Patents
Aluminum nitride substrate and production thereofInfo
- Publication number
- JPH03252382A JPH03252382A JP4661890A JP4661890A JPH03252382A JP H03252382 A JPH03252382 A JP H03252382A JP 4661890 A JP4661890 A JP 4661890A JP 4661890 A JP4661890 A JP 4661890A JP H03252382 A JPH03252382 A JP H03252382A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum nitride
- thin film
- layer
- film
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 43
- 239000000758 substrate Substances 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000010409 thin film Substances 0.000 claims abstract description 25
- 229910004337 Ti-Ni Inorganic materials 0.000 claims abstract description 4
- 229910011209 Ti—Ni Inorganic materials 0.000 claims abstract description 4
- KHYBPSFKEHXSLX-UHFFFAOYSA-N iminotitanium Chemical compound [Ti]=N KHYBPSFKEHXSLX-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 5
- 238000010030 laminating Methods 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 238000007733 ion plating Methods 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 238000007747 plating Methods 0.000 description 4
- 238000005422 blasting Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011104 metalized film Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910017318 Mo—Ni Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、高熱伝導性を有する半導体基板、ヒートシン
ク等に使用される窒化アルミニウム基板およびその製造
方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an aluminum nitride substrate having high thermal conductivity and used for semiconductor substrates, heat sinks, etc., and a method for manufacturing the same.
［従来の技術］
近年ＬＳＩの高密度、高集積化に伴い熱伝導性の高い絶
縁性基板材料が要求されている。従来、絶縁性基板材料
としては、酸化アルミニウム焼結体が最も多く使用され
ている。しかし、酸化アルミニウムは熱伝導率が、約２
０Ｗ／ｍ４と低く、熱膨張率がＬＳＩ等を形成するシリ
コンに比べ大きいため接合がうまくできない等の問題が
あった。そこで、熱伝導性に優れ、熱膨張率がシリコン
に近い窒化アルミニウム（Ａ Ｉ Ｎ）焼結体が注目さ
れてきている。窒化アルミニウム焼結体は、機械的強度
も比較的高く、かつ誘電率も小さいなどの電気特性にも
優れている。しかしながら、窒化アルミニウムは共有結
合性が強いため焼結性が悪く、高温での焼結が必要であ
った。[Prior Art] In recent years, as LSIs have become more dense and highly integrated, there has been a demand for insulating substrate materials with high thermal conductivity. Conventionally, aluminum oxide sintered bodies have been most commonly used as insulating substrate materials. However, aluminum oxide has a thermal conductivity of about 2
It has a low coefficient of thermal expansion of 0 W/m4 and is higher than that of silicon, which forms LSIs, etc., which causes problems such as poor bonding. Therefore, aluminum nitride (AIN) sintered bodies, which have excellent thermal conductivity and a coefficient of thermal expansion close to that of silicon, have been attracting attention. Aluminum nitride sintered bodies have relatively high mechanical strength and excellent electrical properties such as low dielectric constant. However, aluminum nitride has a strong covalent bond, so it has poor sinterability and requires sintering at high temperatures.
これに対し、近年になって種々の焼結助剤の添加により
、焼結性のよい粉末を用いた窒化アルミニウム焼結体が
得られるようになってきた。In contrast, in recent years, it has become possible to obtain aluminum nitride sintered bodies using powders with good sinterability by adding various sintering aids.
また、窒化アルミニウム焼結体に半導体等を実装する場
合、窒化アルミニウムは金属との接合性が悪いため、予
め窒化アルミニウム焼結体表面に、イオンブレーティン
グやスパッタリングなどによる金属薄膜を生成する方法
がとられている。In addition, when mounting semiconductors etc. on aluminum nitride sintered bodies, aluminum nitride has poor bonding properties with metals, so it is necessary to generate a thin metal film on the surface of aluminum nitride sintered bodies in advance by ion blasting, sputtering, etc. It is taken.
また、より接合強度を高めるため、特開昭６２−１８２
１８３号公報等には窒化アルミニウムの表面に酸化アル
ミニウム層を形成し、その上にＴｉ−Ｍｏ−Ｎｉ、Ｔｉ
−Ｍｏ−Ａｕ等のメタライズを行なうこと方法も開示さ
れている。In addition, in order to further increase the bonding strength,
183, etc., an aluminum oxide layer is formed on the surface of aluminum nitride, and Ti-Mo-Ni, Ti
- A method of metallizing Mo-Au and the like is also disclosed.
［発明が解決しようとする課題］
従来のスパッタリングやイオンブレーティングにより生
成した薄膜は、そのままでは窒化アルミニウム焼結体へ
の接着強度が弱いという問題点がある。[Problems to be Solved by the Invention] Thin films produced by conventional sputtering or ion blating have a problem in that the adhesive strength to the aluminum nitride sintered body is weak as is.
また、イオンブレーティングやスパッタリングにより生
成したＴｉおよびＮｉ膜は、その結晶が、柱状に成長し
ており、結晶間に間隙が存在する。このためこの膜にメ
ツキ処理を施すと、メツキ液が浸透し膜が剥がれてしま
うという問題もあった。Furthermore, in Ti and Ni films produced by ion blasting or sputtering, the crystals thereof grow in columnar shapes, and gaps exist between the crystals. Therefore, when this film is subjected to plating treatment, there is a problem in that the plating solution penetrates and the film peels off.
また、窒化アルミニウムの表面に酸化アルミニウム層を
形成することは、窒化アルミニウムと酸化アルミニウム
の熱膨張率の違いから、これらの界面の強度が弱く、メ
タライズ膜の剥離の原因になっていた。Furthermore, when an aluminum oxide layer is formed on the surface of aluminum nitride, the strength of the interface between aluminum nitride and aluminum oxide is weak due to the difference in coefficient of thermal expansion between aluminum nitride and aluminum oxide, causing peeling of the metallized film.
本発明の目的は、酸化アルミニウム膜を特に形成しなく
ても、強固なメタライズ層を有する窒化アルミニウム基
板およびその製造方法を提供することである。An object of the present invention is to provide an aluminum nitride substrate having a strong metallized layer without forming an aluminum oxide film, and a method for manufacturing the same.
［課題を解決するための手段］
本発明は、窒化アルミニウム焼結体表面上にＮ１３Ｔｉ
からなるＴｉ−Ｎｉ反応層およびＮｉ層が積層されてな
る窒化アルミニウム基板である。[Means for Solving the Problems] The present invention provides N13Ti on the surface of an aluminum nitride sintered body.
This is an aluminum nitride substrate formed by laminating a Ti-Ni reaction layer and a Ni layer.
本発明の窒化アルミニウム基板は窒化アルミニウム焼結
体表面にＴｉ、 Ｎｉの順で薄膜を形成した後、減圧雰
囲気下で加熱する熱処理を行ない、Ｔｉ薄膜とＮｉ薄膜
を反応させ、Ｎｉ３Ｔｉ層およびＮｉ層を形成すること
により得ることができる。The aluminum nitride substrate of the present invention is produced by forming thin films of Ti and Ni in this order on the surface of an aluminum nitride sintered body, and then performing heat treatment in a reduced pressure atmosphere to cause the Ti thin film and Ni thin film to react, forming a Ni3Ti layer and a Ni layer. It can be obtained by forming.
本発明において、減圧雰囲気での熱処理は、金属薄膜と
窒化アルミニウム焼結体の接着強度を向上させることに
寄与する。In the present invention, heat treatment in a reduced pressure atmosphere contributes to improving the adhesive strength between the metal thin film and the aluminum nitride sintered body.
また、窒化アルミニウム焼結体の表面は、表面粗さが０
．５〜５μｍが良く、特に２〜５μＩが望ましい。Furthermore, the surface of the aluminum nitride sintered body has a surface roughness of 0.
．． The thickness is preferably 5 to 5 μm, particularly preferably 2 to 5 μI.
表面粗さが０．５μｍより小さいと金属薄膜の窒化アル
ミニウム焼結体へのアンカー効果が弱くなり。When the surface roughness is less than 0.5 μm, the anchoring effect of the metal thin film to the aluminum nitride sintered body becomes weak.
５μｍより大きくなると金属薄膜が均一に付かなくなる
。If it is larger than 5 μm, the metal thin film will not be applied uniformly.
また、ＴｉおよびＮｉ薄膜は窒化アルミニウム焼結体表
面にイオンブレーティングまたはスパッタリングにより
Ｔｉ、 Ｎｉの順にそれぞれ２５００〜６０００Å，１
００００〜３００００人の厚さで成膜することができる
。In addition, Ti and Ni thin films were formed on the surface of the aluminum nitride sintered body by ion blasting or sputtering to form Ti and Ni thin films of 2500 to 6000 Å and 1
It is possible to form a film with a thickness of 0,000 to 30,000.
この時ＴｉとＮｉの膜厚の比（Ｎｉ／Ｔｉ）は、４以上
が望ましい。（Ｎｉ／Ｔｉ）が４より小さいと熱処理後
メタライズ膜表面にＮｉ膜がなくなり、この膜上へのメ
ツキ、ハンダ付けがうまく行かなくなる。At this time, the ratio of the film thicknesses of Ti and Ni (Ni/Ti) is preferably 4 or more. If (Ni/Ti) is less than 4, there will be no Ni film on the surface of the metallized film after heat treatment, and plating and soldering on this film will not be successful.
ＴｉおよびＮｉを製膜した窒化アルミニウム焼結体を真
空中において熱処理するが、金属薄膜を希望の形状にし
たいときは、熱処理の前にパターンニングしてもよい。The aluminum nitride sintered body on which Ti and Ni have been formed is heat treated in a vacuum, but if it is desired to form the metal thin film into a desired shape, it may be patterned before the heat treatment.
熱処理雰囲気はｌ Ｘ １０−’ ｔｏｒｒ以下が望ま
し５ｓ。The heat treatment atmosphere is preferably 1 x 10-' torr or less for 5 seconds.
圧力がＩ Ｘ １０−’ ｔｏｒｒより大きくなると金
属薄膜表面が酸化するため金属薄膜上へのハンダ付け、
メツキ等がうまく行かなくなる。If the pressure is greater than I x 10-' torr, the surface of the metal thin film will oxidize, so soldering onto the metal thin film,
Metsuki etc. will not go well.
また熱処理温度は４５０〜８００℃が良＜５００〜７０
０℃が望ましい。４５０℃未満では、熱処理によりＡｌ
Ｎと金Ｆ４薄膜の充分な接着強度が得られず、８００℃
より高い温度では、金属薄膜表面が酸化する恐れがある
。更に、熱処理時間は、３０〜１２０分が良く、４５〜
７５分が望ましい。熱処理時間が３０分未満の場合、充
分な熱処理が行えず、１２０分より長い時間は意味が無
い。Also, the heat treatment temperature is preferably 450 to 800℃<500 to 70℃.
0°C is desirable. At temperatures below 450°C, Al
Sufficient adhesive strength between N and gold F4 thin films could not be obtained, and the temperature was increased to 800°C.
At higher temperatures, the metal thin film surface may oxidize. Furthermore, the heat treatment time is preferably 30 to 120 minutes, and 45 to 120 minutes.
75 minutes is preferable. If the heat treatment time is less than 30 minutes, sufficient heat treatment cannot be performed, and a time longer than 120 minutes is meaningless.
生成したＴｉおよびＮｉ膜は、その結晶が、柱状に成長
しており、結晶間に間隙が存在するが、ＴｉとＮｉを反
応させることによってＮｉ ｓＴｉの緻密な膜が生成し
、メツキ液の浸透を防止することができる。In the produced Ti and Ni films, the crystals grow in a columnar shape, and there are gaps between the crystals, but by reacting Ti and Ni, a dense film of NisTi is produced, and the plating solution penetrates. can be prevented.
また、熱処理期間に窒化アルミニウムとＴｉが反応し、
窒化アルミニウムと金属膜の間にＴｉＮが生成すること
により、窒化アルミニウムと金属薄膜の接着強度が上昇
する。Additionally, aluminum nitride and Ti react during the heat treatment period,
The generation of TiN between the aluminum nitride and the metal film increases the adhesive strength between the aluminum nitride and the metal thin film.
［実施例］
以下、実施例により本発明を具体的に説明するが、本発
明は以下の実施例に限定されるものではない。[Examples] Hereinafter, the present invention will be specifically explained with reference to Examples, but the present invention is not limited to the following Examples.
表面粗さ３μｍの窒化アルミニウム板に、Ｔｉ及びＮｉ
膜を生成し、これを５×１０−“ｔｏｒｒの圧力で熱処
理を行い、窒化アルミニウムと金属簿膜の接着強度を測
定し、第１表に示す結果を得た。Ti and Ni are placed on an aluminum nitride plate with a surface roughness of 3 μm.
A film was produced, heat treated at a pressure of 5 x 10-''torr, and the adhesive strength between the aluminum nitride and metal film was measured, and the results shown in Table 1 were obtained.
第１図は、ＴｉおよびＮｉをスパッタリングにより生成
し、これを５ Ｘ １０”” ｔｏｒｒの圧力下、６０
０℃で６０分熱処理した時の窒化アルミニウム基板断面
の結晶構造を示したものであり、第２図は第１図に対応
する元素濃度分布を示したものである。Fig. 1 shows that Ti and Ni are produced by sputtering, and then sputtered at 60°C under a pressure of 5 x 10'' torr.
It shows the crystal structure of a cross section of an aluminum nitride substrate after heat treatment at 0° C. for 60 minutes, and FIG. 2 shows the element concentration distribution corresponding to FIG. 1.
第１図において、化合物組成については、ｘ３回折によ
り測定した。In FIG. 1, the compound composition was measured by x3 diffraction.
窒化アルミニウム焼結体表面に、Ｎｉ ｓＴｉが生成し
ており、金属薄膜内にアルミニウムおよび窒素が拡散し
ていることがわかる。It can be seen that Ni sTi is generated on the surface of the aluminum nitride sintered body, and that aluminum and nitrogen are diffused within the metal thin film.
比較例として、窒化アルミニウム焼結体表面の粗さを、
０．２μｍにした場合、およびＴｉ、 Ｎｉをイオ−１
，Ｐはイオンブレーティング、 ｓ、ｐはスパッタリン
グを示す。As a comparative example, the roughness of the aluminum nitride sintered body surface was
When the thickness is 0.2 μm, and Ti and Ni are io-1
, P indicate ion blating, and s and p indicate sputtering.
ンブレーテイングあるいはスパッタリングしただけの場
合の膜の接着強度を示したが、本発明の場合より接着強
度が低いことがわかる。The adhesive strength of the film obtained by just emblating or sputtering is shown, and it can be seen that the adhesive strength is lower than that of the present invention.
［発明の効果］
本発明によれば、窒化アルミニウム表面に強固な金属薄
膜を生成した窒化アルミニウム基板を得ることができる
ため、優れた半導体基板およびヒートシンクを得ること
ができる。[Effects of the Invention] According to the present invention, it is possible to obtain an aluminum nitride substrate in which a strong metal thin film is formed on the aluminum nitride surface, and therefore, an excellent semiconductor substrate and heat sink can be obtained.
第１図は本発明の一実施例の窒化アルミニウム基板断面
の結晶構造を示した図、第２図は第１図に対応する元素
濃度分布を示した図である。
１．５ηｍ
＋−刊FIG. 1 is a diagram showing the crystal structure of a cross section of an aluminum nitride substrate according to an embodiment of the present invention, and FIG. 2 is a diagram showing the element concentration distribution corresponding to FIG. 1. 1.5ηm +- publication
Claims (4)
らなるＴｉ−Ｎｉ反応層およびＮｉ層が積層されてなる
窒化アルミニウム基板。(1) An aluminum nitride substrate in which a Ti-Ni reaction layer made of Ni_3Ti and a Ni layer are laminated on the surface of an aluminum nitride sintered body.
薄膜を形成した後、減圧雰囲気下で加熱する熱処理を行
ない、Ｔｉ薄膜とＮｉ薄膜を反応させ、Ｎｉ＿３Ｔｉ層
およびＮｉ層を形成することを特徴とする窒化アルミニ
ウムの製造方法。(2) After forming a thin film of Ti and Ni in this order on the surface of the aluminum nitride sintered body, heat treatment is performed under a reduced pressure atmosphere to cause the Ti thin film and Ni thin film to react to form a Ni_3Ti layer and a Ni layer. A method for producing aluminum nitride, characterized by:
００Å，１００００〜３００００Åの厚さに形成するこ
とを特徴とする請求項２に記載の窒化アルミニウムの製
造方法。(3) Ti and Ni thin films with 2500 to 600
3. The method of manufacturing aluminum nitride according to claim 2, wherein the aluminum nitride is formed to a thickness of 00 Å, 10,000 to 30,000 Å.
で、４５０〜８００℃で３０〜１２０分の条件で行なう
ことを特徴とする窒化アルミニウム基板の製造方法。(4) A method for manufacturing an aluminum nitride substrate, characterized in that the heat treatment is carried out at 450 to 800° C. for 30 to 120 minutes under a pressure of 1×10^-^5 torr or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4661890A JPH03252382A (en) | 1990-02-27 | 1990-02-27 | Aluminum nitride substrate and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4661890A JPH03252382A (en) | 1990-02-27 | 1990-02-27 | Aluminum nitride substrate and production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03252382A true JPH03252382A (en) | 1991-11-11 |
Family
ID=12752285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4661890A Pending JPH03252382A (en) | 1990-02-27 | 1990-02-27 | Aluminum nitride substrate and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03252382A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100693297B1 (en) * | 2004-07-05 | 2007-03-13 | 주식회사 플라티코리아 | Methods for treating surface of metal |
| WO2012063638A1 (en) * | 2010-11-08 | 2012-05-18 | 昭和電工株式会社 | Cladding material for insulated substrates |
| JP2014087805A (en) * | 2012-10-29 | 2014-05-15 | Mmc Superalloy Corp | COMPOSITE MEMBER COMPOSED OF ANTICORROSIVE Ni-BASED ALLOY AND ALUMINUM OR ALUMINUM ALLOY |
| JP2017168685A (en) * | 2016-03-16 | 2017-09-21 | 富士電機株式会社 | Method for manufacturing silicon carbide semiconductor device |
-
1990
- 1990-02-27 JP JP4661890A patent/JPH03252382A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100693297B1 (en) * | 2004-07-05 | 2007-03-13 | 주식회사 플라티코리아 | Methods for treating surface of metal |
| WO2012063638A1 (en) * | 2010-11-08 | 2012-05-18 | 昭和電工株式会社 | Cladding material for insulated substrates |
| JP2012104539A (en) * | 2010-11-08 | 2012-05-31 | Showa Denko Kk | Cladding material for insulating substrate |
| CN103210488A (en) * | 2010-11-08 | 2013-07-17 | 昭和电工株式会社 | Cladding material for insulated substrates |
| US8987895B2 (en) | 2010-11-08 | 2015-03-24 | Showa Denko K.K. | Clad material for insulating substrates |
| JP2014087805A (en) * | 2012-10-29 | 2014-05-15 | Mmc Superalloy Corp | COMPOSITE MEMBER COMPOSED OF ANTICORROSIVE Ni-BASED ALLOY AND ALUMINUM OR ALUMINUM ALLOY |
| JP2017168685A (en) * | 2016-03-16 | 2017-09-21 | 富士電機株式会社 | Method for manufacturing silicon carbide semiconductor device |
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