CN104981895B - 具有多个等离子体配置的半导体处理系统 - Google Patents

具有多个等离子体配置的半导体处理系统 Download PDF

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CN104981895B
CN104981895B CN201480007781.5A CN201480007781A CN104981895B CN 104981895 B CN104981895 B CN 104981895B CN 201480007781 A CN201480007781 A CN 201480007781A CN 104981895 B CN104981895 B CN 104981895B
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CN104981895A (zh
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D·卢博米尔斯基
陈兴隆
S·文卡特拉马
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract

示例性系统可包括腔室，所述腔室经配置以在所述腔室的处理区域中含有半导体基板。所述系统可包括第一远程等离子体单元，所述第一远程等离子体单元与腔室的第一入口流体耦合且经配置以将第一前驱物经由第一入口传递至腔室中。所述系统可更进一步包括第二远程等离子体单元，所述第二远程等离子体单元与腔室的第二入口流体耦合且经配置以将第二前驱物经由第二入口传递至腔室中。可将第一入口及第二入口与腔室的混合区域流体耦合，所述混合区域与腔室的处理区域分开且与所述处理区域流体耦合。可配置混合区域以允许第一前驱物及第二前驱物在腔室的处理区域外部彼此相互作用。

Description

具有多个等离子体配置的半导体处理系统
相关专利申请案的交叉引用
本申请案主张于2013年3月8日提交的美国非临时专利申请案第13/791,074号的优先权，所述美国非临时专利申请案主张于2013年2月8日提交的美国临时申请案第61/762,767号的权益，两者标题皆为“Semiconductor Processing Systems Having MultiplePlasma Configurations(具有多个等离子体配置的半导体处理系统)”。出于所有目的以引用的方式将上述两个申请案的全部揭示内容并入本文。
技术领域
本发明技术涉及半导体工艺及设备。更具体言的，本发明技术涉及具有多个等离子体配置的处理系统。
背景
在基板表面上产生错综复杂的图案化材料层的工艺使得集成电路成为可能。在基板上产生图案化材料需要用于移除暴露材料的受控方法。化学蚀刻被用于各种目的，包括用光阻剂将图案转移至底层中、薄化各层或薄化存在于表面上的特征的横向尺寸。常常需要具有蚀刻一种材料比蚀刻另一种材料更快的蚀刻工艺促进例如图案转移工艺。此蚀刻工艺被认为对第一材料具有选择性。作为材料、电路及工艺的多样性的结果，蚀刻工艺已被发展成具有对各种材料的选择性。
湿法HF蚀刻相比其它介电质及半导体材料优先移除氧化硅。然而，湿法工艺不能穿透一些受约束沟槽及有时使剩余材料变形。在基板处理区域内部形成的本地等离子体中产生的干法蚀刻可穿透更受约束沟槽及展示出精密剩余结构的较少变形。然而，本地等离子体可经由因放电产生电弧损坏基板。
因此，需要一种改良的方法及系统，用于选择性地蚀刻半导体基板上的材料及结构，所述方法及系统允许对前驱物化学品及蚀刻参数的更多控制。藉由本发明技术解决这些及其它需求。
发明内容
关于半导体处理腔室描述系统及方法。示例性系统可包括腔室，所述腔室经配置以在所述腔室的处理区域中包含半导体基板。所述系统可包括第一远程等离子体单元，所述第一远程等离子体单元与腔室的第一入口流体耦合且经配置以将第一前驱物经由第一入口传递至腔室中。所述系统可更进一步包括第二远程等离子体单元，所述第二远程等离子体单元与腔室的第二入口流体耦合且经配置以将第二前驱物经由第二入口传递至腔室中。可将第一入口及第二入口与腔室的混合区域流体耦合，所述混合区域与腔室的处理区域分开且与所述处理区域流体耦合。可配置混合区域以允许第一前驱物及第二前驱物在腔室的处理区域外部彼此相互作用。
所述系统可进一步包括安置于腔室的混合区域与处理区域之间的装置。所述装置可经配置以至少部分地抑制导向处理区域的离子物质的流动。所述腔室可进一步包括位于腔室内部的气体分配组件，所述气体分配组件处于腔室的处理区域的顶部部分处或腔室的处理区域上方，且经配置以将第一前驱物及第二前驱物两者传递至腔室的处理区域中。气体分配组件可包括上平板及下平板，且所述等平板可彼此耦合以界定平板之间的容积。平板的耦合可提供穿过上平板及下平板的第一流体通道及穿过下平板的第二流体通道，所述通道经配置以提供自容积穿过下平板的流体入口。第一流体通道可与平板与第二流体通道之间的容积流体隔离。经由与腔室中的第三入口流体耦合的气体分配组件的侧面可流体进入所界定的容积，所述第三入口与腔室的第一入口及第二入口分开。
可将到腔室的第一入口及第二入口与腔室的顶部部分耦合。在实施例中，第一入口及第二入口可彼此分开。亦可将第一入口及第二入口在单个位置处与腔室的顶部部分耦合。可配置第一远程等离子体单元及第二远程等离子体单元与单个入口耦合以允许第一前驱物及第二前驱物在进入腔室的混合区域前相互作用。亦可将第一入口及第二入口与腔室的侧面部分耦合，且所述入口可彼此分开或耦合在一起。可将第一入口及第二入口与气室流体耦合，所述气室围绕腔室径向分配及经配置以在遍及气室的多个位置处提供入口至腔室的混合区域。
处理系统的腔室可进一步包括安置于腔室的混合区域与处理区域之间的淋喷头，所述淋喷头经配置以分配穿过腔室的第一前驱物及第二前驱物。淋喷头可界定围绕淋喷头的外部部分安置的多个孔。淋喷头可不包括围绕于淋喷头的内部部分的孔，所述内部部分至少自淋喷头的中心点延伸至淋喷头的约25％的径向长度。
系统的远程等离子体单元可具有包括第一材料的第一远程等离子体单元及包括第二材料的第二远程等离子体单元。可基于第一前驱物的成分选择第一材料且可基于第二前驱物的成分选择第二材料。第一材料及第二材料可为类似或不同的材料。可配置第一远程等离子体单元及第二远程等离子体单元以在约10W至高于或约10kW之间操作。可配置第一远程等离子体单元以在基于第一前驱物的成分所选择的第一功率水平下操作。可配置第二远程等离子体单元以在基于第二前驱物的成分所选择的第二功率水平下操作。可配置系统以在彼此类似或彼此不同的功率水平下操作第一远程等离子体单元及第二远程等离子体单元。
亦描述操作半导体处理系统的方法。所述方法可包括使第一前驱物穿过第一远程等离子体单元流入半导体处理腔室中。所述方法亦可包括使第二前驱物穿过第二远程等离子体单元流入处理腔室中。可在腔室的混合区域中组合第一前驱物及第二前驱物，所述混合区域流体定位于基板所在的腔室的处理区域的上游。第一前驱物可包括含氟前驱物而第二前驱物可包括含氧前驱物。可在第一远程等离子体单元中以第一等离子体功率激励第一前驱物，且可在第二远程等离子体单元中以第二等离子体功率激励第二前驱物。第一等离子体功率及第二等离子体功率可为彼此类似或不同。
此技术相较于习知系统及技术可提供众多益处。举例而言，可基于前驱物的个别激励改良及调谐蚀刻化学品。另外，可基于可提供更均匀的气体混合物的流动路径提供更大的工艺均匀性。将结合下文描述及随附图式更详细地描述所述等及其它实施例以及众多优势及特征。
附图简述
可藉由参考本说明书的剩余部分及图式实现对所揭示技术的本质及优势的进一步理解。
图1图示示例性处理工具的一实施例的俯视平面图。
图2A图示示例性处理腔室的横截面示意图。
图2B图示图2A中所图示的处理腔室的一部分的细节图。
图3A至图3C图示根据所揭示的技术的示例性淋喷头配置的示意图。
图4图示根据所揭示的技术的示例性淋喷头的额外平面图。
图5图示根据所揭示的技术的处理腔室的横截面简化图。
图6图示根据所揭示的技术的处理腔室的横截面简化图。
图7图示根据所揭示的技术的处理腔室的横截面简化图。
图8图示图7所例示的处理腔室沿线A-A截取的横截面部分的平面图。
图9图示根据所揭示的技术的处理腔室的横截面简化图。
图10图示图9所例示的处理腔室沿线B-B截取的横截面部分的平面图。
图11图示根据所揭示的技术操作半导体处理腔室的方法的流程图。
将图式中的若干者包括作为示意图。应理解，所述图式出于说明性的目的，且不应视为按比例，除非明确如此具体陈述。
在随附图式中，类似部件和/或特征可具有相同组件符号。进一步地，相同类型的各种部件可由组件符号后的短划线及第二组件符号区分，所述第二组件符号区分类似部件。只要本说明书中使用第一组件符号，则所述描述便适用于具有相同第一组件符号的类似部件中的任一者而无关于第二组件符号如何。
详细描述
本发明技术包括用于半导体处理的系统，所述系统提供改良的流体传递机制。某些干法蚀刻技术包括使用远程等离子体系统将自由基流体物质提供至处理腔室中。在于2012年4月4日提交申请的共同受让的专利申请案第13/439079号中描述示例性方法，所述专利申请案将在与本文所主张的方面及描述不矛盾的程度上以引用的方式并入本文。当使用可包括若干自由基物质的干法蚀刻剂配方时，由不同流体产生的自由基物质可与远程等离子体腔室不同地相互作用。举例而言，用于蚀刻的前驱物流体可包括含氟前驱物及含氧或含氢前驱物。可将远程等离子体系统的等离子体空腔以及至处理腔室的分配部件涂覆或排列成行以提供保护免受反应性自由基影响。举例而言，可用氧化物或氮化物涂覆铝等离子体空腔，此涂覆将保护空腔免受氟自由基影响。然而，若前驱物亦含有氢基，则氢物质可将氧化铝转换或还原成铝，在此点处氟可与铝直接反应产生诸如氟化铝之类的不当副产物。
常规技术已经通过定期维护及更换部件处理所述不当副作用，然而，本发明系统藉由提供自由基前驱物经由独立流体路径进入处理腔室中来消除此需要。藉由使用两个或两个以上远程等离子体系统，每个系统被配置成传递独立前驱物流体，可基于正经传递的流体单独保护每个系统。发明者亦已意外确定，藉由提供前驱物物质穿过独立远程等离子体系统，可定制每种流体的具体分解及等离子体特性，从而提供改良的蚀刻性能。因此，就化学品调配而言，本文所描述的系统提供改良的灵活性。将在下文中详细描述这些及其它益处。
尽管其余揭示内容通常将识别使用所揭示技术的具体蚀刻工艺，但是应容易理解，系统及方法可同样适用于可在所描述的腔室中发生的沉积及清洗工艺。因此，本发明技术不应被认为是仅仅限制于蚀刻工艺。
图1图示根据所揭示的实施例的沉积、蚀刻、烘焙及固化腔室的处理工具100的实施例的俯视平面图。在图式中，一对正面开口标准箱(front opening unified pods；FOUPs)102供应各种大小的基板，由机器人臂104接收所述基板并放置到低压固持区域106中，随后再放置到基板处理腔室108a至108f的一者中，所述基板处理腔室安置于串接区段109a至109c中。可使用第二机器人臂110将基板晶片自固持区域106传送至基板处理腔室108a至108f及返回。可配置每个基板处理腔室108a至108f以执行众多基板处理操作，所述处理操作除循环层沉积(CLD)、原子层沉积(ALD)、化学气相沉积(CVD)、物理气相沉积(PVD)、蚀刻、预清洗、脱气、定向及其它基板工艺外还包括本文所描述的干法蚀刻工艺。
基板处理腔室108a至108f可包括用于沉积、退火、固化和/或蚀刻基板晶片上的介电膜的一个或多个系统部件。在一种配置中，可使用两对处理腔室(例如，处理腔室108c-108d及处理腔室108e-108f)以在基板上沉积介电材料，及可使用第三对处理腔室(例如，处理腔室1308a-1308b)以蚀刻经沉积的介电质。在另一配置中，可将所有三对腔室(例如，腔室108a-108f)配置成蚀刻基板上的介电膜。可在与不同实施例中所示的制造系统分离的腔室中实施所描述的工艺中的任一者或多者。应将了解，系统100涵盖用于介电膜的沉积、蚀刻、退火及固化腔室的额外配置。
图2A图示处理腔室内部具有分隔等离子体产生区域的示例性工艺腔室区段200的横截面视图。在膜蚀刻期间，例如，氮化钛、氮化钽、钨、硅、多晶硅、氧化硅、氮化硅、氮氧化硅、氧碳化硅等等，可使工艺气体经由气体入口组件205流入第一等离子体区域215中。一个或多个远程等离子体系统(RPS)单元201可任选地包括于系统中，及可处理第一气体及第二气体，所述气体随后可行进穿过气体入口组件205。入口组件205可包括两个或两个以上不同气体供应通道，其中第二通道(未图示)可绕过RPS单元201中的任一者(若包括的话)。因此，在所揭示的实施例中，可将前驱物气体在未激励状态下传递至处理腔室中。在另一实例中，在所揭示的实施例中，经由RPS提供的第一通道可用于工艺气体及绕过RPS的第二通道可用于处理气体(treatment gas)。在工艺气体进入第一等离子体区域215前，可在RPS单元201内部激励工艺气体。因此，在所揭示的实施例中，下文将常引用到的含氟前驱物(例如)可穿过RPS 201或绕过RPS单元。将类似地理解此布置涵盖的各种其它实例。
图示了冷却平板203、面板217、离子抑制器223、淋喷头225及上面安置有基板255的基板支撑件265及可根据所揭示的实施例包括以上各者。基座265可具有热交换通道，热交换流体流过所述热交换通道以控制基板的温度。此配置可允许冷却或加热基板255温度以维持相对低温，诸如约-20℃至约200℃之间或中间温度。热交换流体可包含乙二醇和/或水。亦可使用嵌入式电阻加热器组件来电阻加热可包含铝、陶瓷或上述组合的基座265的晶片支撑盘，以便实现相对高温，诸如自至多或约100℃至高于或约1100℃。可在基座内部将加热组件形成为一个或多个环，且可与支撑盘的周界相邻布设加热器组件的外部部分，同时在具有较小半径的同心圆的路径上布设内部部分。连至加热器组件的电线可穿过基座265的杆，所述杆可进一步经配置以旋转。
面板217可为棱锥形、圆锥形或具有窄顶部部分延伸至宽底部部分的另一类似结构。另外，如图所示，面板217可为平面并包括用于分配工艺气体的多个穿透通道。取决于使用RPS 201，等离子体产生气体和/或等离子体激励物质可穿过面板217中的多个孔(图2B所示)更加均匀地传递至第一等离子体区域215中。
示例性配置可包括具有气体入口组件205通向气体供应区域258，藉由面板217将所述气体供应区域与第一等离子体区域215分隔，使得气体/物质穿过面板217中的孔流入第一等离子体区域215中。可选择结构及操作特征以防止等离子体从第一等离子体区域215明显回流至供应区域258、气体入口组件205及流体供应系统(未图示)中。结构特征可包括选择面板217中的孔的尺寸及横截面几何形状以钝化(deactivate)回流等离子体。操作特征可包括维持气体供应区域258与第一等离子体区域215之间的压力差，所述压力差维持等离子体穿过淋喷头225的单向流动。图示面板217或腔室的导电顶部部分及淋喷头225具有位于所述特征之间的绝缘环220，此情况允许将AC电位相对于淋喷头225和/或离子抑制器223施加于面板217上。可在面板217与淋喷头225和/或离子抑制器223之间安置绝缘环220，使得电容耦合等离子体(CCP)能够在第一等离子体区域中形成。隔板(未图示)可另外定位于第一等离子体区域215中或以其它方式与气体入口组件205耦合，以影响流体经由气体入口组件205流入所述区域中。
离子抑制器223可包含平板或其它几何形状，所述形状界定贯穿结构的多个孔，所述孔经配置以抑制离子带电物质迁移离开等离子体激励区域215，同时允许不带电中性或自由基物质穿过离子抑制器223进入抑制器与淋喷头之间的活化气体传递区域中。在所揭示的实施例中，离子抑制器223可包含具有各种孔配置的多孔板。所述不带电物质可包括用低反应性载气经由孔载送的高反应性物质。如上所述，可减少离子物质穿过孔的迁移，且及在一些情况中可完全抑制所述迁移。控制离子物质穿过离子抑制器223的量可提供对气体混合物接触底层晶片基板的增加的控制，这进而可增加对气体混合物的沉积和/或蚀刻特性的控制。举例而言，气体混合物的离子浓度的调整可明显改变所述气体混合物的蚀刻选择性(例如，TiNx:SiOx蚀刻比率、TiN:W蚀刻比率等等)。在执行沉积的替代实施例中，气体混合物的离子浓度的调整亦可改变用于介电材料的保形对可流动(conformal-to-flowable)类型沉积的平衡。
可配置离子抑制器223中的多个孔口以控制活化气体(亦即，离子、自由基和/或中性物质)通过离子抑制器223。举例而言，可控制孔口的深宽比(或孔口直径与长度比率)和/或孔口的几何形状，使得活化气体中的离子带电物质穿过离子抑制器223的流动减少。离子抑制器223中的孔口可包括面对等离子体激励区域215的锥形部分及面对淋喷头225的圆柱形部分。可确定圆柱形部分的形状及尺寸以控制离子物质传递至淋喷头225的流动。亦可将可调电偏压作为额外手段施加于离子抑制器223以控制离子物质穿过抑制器的流动。
离子抑制组件223可用以减少或消除自等离子体产生区域移动至基板的离子带电物质的量。不带电中性及自由基物质仍可穿过离子抑制器中的开口以与基板反应。应注意，完全消除围绕基板的反应区域中的离子带电物质并非总是所欲目标。在许多情况中，需要离子物质到达基板以便执行蚀刻和/或沉积工艺。在所述情况中，离子抑制器可有助于将反应区域中的离子物质的浓度控制在辅助工艺的水平上。
淋喷头225与离子抑制器223结合可允许腔室等离子体区域215中存在的等离子体避免直接激励基板处理区域233中的气体，同时仍允许经激励的物质自腔室等离子体区域215移动至基板处理区域233中。以此方式，可配置腔室以防止等离子体接触正被蚀刻的基板255。这可有利地保护基板上图案化的各种复杂结构及膜，若被所产生的等离子体直接接触基板，各种复杂结构及膜可能被损坏、变位或以其它方式弯曲。另外，当允许等离子体接触基板或接近基板水平时，氧化物物质蚀刻的速率可增加。因此，若暴露的第二材料是氧化物，则可藉由维持等离子体远离基板来进一步保护此材料。
处理系统可进一步包括电源240，所述电源与处理腔室电气耦合以提供电力至面板217、离子抑制器223、淋喷头225和/或基座265以在第一等离子体区域215或处理区域233中产生等离子体。可配置电源以取决于所执行的工艺以传递可调功率量至腔室。此配置可允许在正执行的工艺中使用可调谐等离子体。不同于常常处于开启或关闭功能状态的远程等离子体单元，可配置可调谐等离子体以传递具体功率量至等离子体区域215。此举又可允许发展特定等离子体特性以使得可以具体方式分解前驱物以增强由所述前驱物所产生的蚀刻轮廓。
可在淋喷头225上方的腔室等离子体区域215或淋喷头225下方的基板处理区域233点燃等离子体。等离子体可存在于腔室等离子体区域215中以自含氟前驱物的流入物产生氟基前驱物。可在处理腔室的导电顶部部分(诸如面板217)与淋喷头225和/或离子抑制器223之间施加通常在射频(RF)范围内的交流电压以在沉积期间点燃腔室等离子体区域215中的等离子体。RF电源可产生13.56MHz的高RF频率，但亦可单独或与13.56MHz频率组合产生其它频率。
等离子体功率可具有各种频率或多个频率的组合。在示例性处理系统中，可藉由RF功率相对于离子抑制器223和/或淋喷头225传递至面板217来提供等离子体。在不同实施例中，RF功率可介于约10瓦特与约2000瓦特之间、介于约100瓦特与约2000瓦特之间、介于约200瓦特与约1500瓦特之间或介于约200瓦特与约1000瓦特之间。在不同实施例中，在示例性处理系统中施加的RF频率可为小于约200kHz的低RF频率、介于约10MHz与约15MHz之间的高RF频率或大于或约1GHz的微波频率。可将等离子体功率电容耦合(CCP)或电感耦合(ICP)至远程等离子体区域中。
当开启基板处理区域233中的底部等离子体以例如固化膜或清洗基板处理区域233边界处的内表面时，可将顶部等离子体区域215保持处于低功率或无功率。可藉由在淋喷头255与腔室的基座265或底部之间施加AC电压来点燃基板处理区域233中的等离子体。可在存在等离子体的同时将清洗气体引入至基板处理区域233中。
诸如前驱物(例如，含氟前驱物)的流体可藉由本文所描述的淋喷头的实施例流入处理区域233中。衍生自等离子体区域215中的工艺气体的激励物质可移动穿过离子抑制器223和/或淋喷头225中的孔及使激励物质与自淋喷头的独立部分流入处理区域233的额外前驱物反应。替代地，若所有前驱物物质正在等离子体区域215中被激励，则可没有额外前驱物流动穿过淋喷头的独立部分。处理区域233中可存在极少等离子体或没有等离子体。在所揭示的应用中，前驱物的激励衍生物可在基板上方的区域中组合及偶尔在基板上组合以在基板上蚀刻结构或移除物质。
直接在第一等离子体区域215中激励流体或在RPS单元201a至201b中激励流体可提供若干益处。由于第一等离子体区域215中的等离子体，可在处理区域233内部增加衍生自流体的激励物质的浓度。此增加可由第一等离子体区域215中的等离子体的位置引起。可定位处理区域233比远程等离子体系统(RPS)201更接近第一等离子体区域215，从而为激励物质经由与其它气体分子、腔室壁及淋喷头的表面碰撞离开激励状态留出更少时间。
亦可在处理区域233内部增加衍生自工艺气体的激励物质的浓度的均匀性。此可由第一等离子体区域215的形状引起，所述形状可更加类似于处理区域233的形状。在RPS单元201a至201b中所产生的激励物质相对于穿过淋喷头225的中心附近的孔的物质可移动更大的距离以便穿过淋喷头225的边缘附近的孔。更大的距离可导致对激励物质的激励减少及例如可导致基板的边缘附近的生长速率减慢。在第一等离子体区域215中激励流体可减轻流体流动穿过RPS 201的此变化。
可在RPS单元201a至201b中激励处理气体并且可将已激励状态下的处理气体经由淋喷头225传递至处理区域233中。或者，可将功率施加于第一处理区域以激励等离子体气体或者增强来自RPS的已激励工艺气体。尽管可在处理区域233中产生等离子体，但是可替代地在所述处理区域中不产生等离子体。在一个示例中，处理气体或前驱物的仅有激励可来自在RPS单元201a至201b中激励处理气体以使得彼此在处理区域233中反应。
除流体前驱物外，可存在出于各种目的在各种时间引入的其它气体，包括帮助传递的载气。可引入处理气体以自腔室壁、基板、已沉积的膜和/或沉积期间的膜中移除不当物质。可在等离子体中激励处理气体及随后将所述处理气体用于减少或移除腔室内部的残余内容物。在其它所揭示的实施例中，可在没有等离子体的情况下使用处理气体。当处理气体包括水蒸气时，可使用质量流量计(MFM)、喷射阀或藉由市售水蒸气产生器实现传递。可穿过RPS单元或绕过RPS单元将处理气体引入处理区域233，且可在第一等离子体区域中进一步激励所述处理气体。
图2B图示影响穿过面板217的处理气体分配的特征的细节图。如图2A及图2B所示，面板217、冷却平板203及气体入口组件205相交以界定气体供应区域258，可将工艺气体自气体入口205传递至所述气体供应区域258中。所述气体可填充气体供应区域258及经由面板217中的孔259流向第一等离子体区域215。可配置孔259来以实质单向的方式直接流动，以使得工艺气体可流入处理区域233中，但是可部分地或完全地防止气体在穿越面板217后回流至气体供应区域258中。
供处理腔室区段200中使用的诸如淋喷头225之类的气体分配组件可称为双通道淋喷头(DCSH)并且本文将在图2A以及图3A至图3C所描述的实施例中另外详细描述所述组件。双通道淋喷头可提供蚀刻工艺，所述蚀刻工艺允许蚀刻剂在处理区域233外分离，以在所述蚀刻剂被传递至处理区域中前提供与腔室部件及彼此之间的受限相互作用。
淋喷头225可包含上平板214及下平板216。所述平板可彼此耦合以界定平板之间的容积218。可耦合所述平板以便提供穿过上平板及下平板的第一流体通道219及穿过下平板216的第二流体通道221。可配置所形成的通道以提供自容积218穿过下平板216仅仅经由第二流体通道221的流体入口，及可将第一流体通道219与介于平板与第二流体通道221之间的容积218流体隔离。可经由气体分配组件225的侧面流体进入容积218。尽管第2图的示例性系统包括双通道淋喷头，但是应理解，可使用替代分配组件，所述分配组件维持进入处理区域233前的第一前驱物及第二前驱物被流体隔离。举例而言，可使用多孔平板及平板下方的管道，但是其它配置可以降低的效率操作或未提供如所述与双通道淋喷头相同的一致处理。
在图示实施例中，淋喷头225可经由第一流体通道219分配工艺气体，所述气体含有藉由腔室等离子体区域215中的等离子体激励后或来自RPS单元201a至201b中的等离子体流出物。在实施例中，引入至RPS单元201和/或腔室等离子体区域215中的工艺气体可含有氟(例如，CF4、NF3或XeF2)、氧(例如，N2O)或含氢前驱物(例如，H2或NH3)。工艺气体中的一者或两者亦可包括诸如氦气、氩气、氮气(N2)等等的载气。等离子体流出物可包括工艺气体的经电离或中性衍生物及在本文中参考引入的工艺气体的原子成分亦可称为氟基前驱物。
在2011年10月3日提交的专利申请案第13/251,714号中更加完整地描述额外双通道淋喷头以及此处理系统及腔室，出于所有目的在与本文所主张的特征及描述不矛盾的程度上将所述申请案以引用的方式并入本文。
将供处理腔室区段200中使用的气体分配组件225称为双通道淋喷头(DCSH)及本文中在图3A至图3C所描述的实施例中详细描述所述组件。双通道淋喷头可允许介电材料的可流动沉积及操作期间前驱物与处理流体的分离。替代地，淋喷头可用于蚀刻工艺，所述蚀刻工艺允许蚀刻剂在反应区外分离，以在所述蚀刻剂被传递至处理区域中前提供与腔室部件及彼此之间的受限相互作用。
大体上参看图3A至图3C中的淋喷头，可藉由以下步骤将前驱物引入至处理区域中：首先藉由第一歧管320或上平板及第二歧管325或下平板将前驱物引入至淋喷头300中所界定的内部淋喷头容积中。所述歧管可为界定多个孔的多孔平板。内部淋喷头容积中的前驱物(通常称为第三前驱物)可经由下平板中所形成的孔375流入处理区域233。此流动路径可与腔室中的工艺气体的其余者隔离，及可提供前驱物在进入基板255与下平板325的底部之间所界定的处理区域233中前处于未反应或实质未反应状态。一旦在处理区域233中，两种前驱物可彼此反应及与基板反应。可经由淋喷头中所形成的侧面通道(诸如本文淋喷头实施例中所示的通道322)将第三前驱物引入至淋喷头300中所界定的内部淋喷头容积。第一前驱物气体及第二前驱物气体可处于等离子体状态，包括来自RPS单元或来自第一等离子体区域中所产生的等离子体的自由基。另外，可在处理区域中产生等离子体。
图3A例示气体分配组件300的上部透视图。在使用中，气体分配系统300可具有实质水平定向以使得贯穿形成的气体孔的轴可垂直或实质垂直于基板支撑件(参看第2图的基板支撑件265)的平面。图3B例示气体分配组件300的底部透视图。图3C是气体分配组件300的仰视平面图。
参看图3A至图3C，气体分配组件300大体包括环形主体340、上平板320及下平板325。环形主体340可为环，所述环具有位于内径处的内部环形壁、位于外径处的外部环形壁、上表面315及下表面310。上表面315及下表面310界定环形主体340的厚度。可在环形主体340中形成管道350及可使冷却流体在围绕环形主体340的外围延伸的通道内部流动。替代地，加热组件351可延伸穿过通道，所述加热组件用于加热淋喷头组件。环形主体340可另外界定通道322，可经由所述通道将额外前驱物传递至处理腔室。
上平板320可为碟形主体及可在第一上凹部处与环形主体340耦合。上平板可具有经选定与上凹部的直径匹配的直径，且上平板可包含贯穿形成的多个第一孔360。第一孔360可延伸超越上平板320的底表面，从而形成众多凸起圆柱形主体(未图示)。每个凸起圆柱体之间可为间隙。如图3A所见，可在上平板320上以多边图案排列第一孔360，以使得穿过最外部第一孔360的中心所画出的虚线界定或实质界定多边图形，所述多边图形可为例如六边形。
下平板325可具有碟形主体，所述碟形主体具有贯穿形成的众多第二孔365及第三孔375，如图3C中尤其可见。下平板325可具有多个厚度，所界定部分的厚度大于上平板320的中心厚度，且在所揭示的实施例中，界定部分的厚度至少约为上平板320的厚度的两倍。下平板325亦可具有在第一下凹部处与环形主体340的内部环形壁的直径匹配的直径。可藉由下平板325将第二孔365界定为向上延伸至上平板320的圆柱形主体。以此方式，可在第一孔与第二孔之间形成通道，所述通道彼此流体隔离，且所述通道可称为第一流体通道。另外，上平板及下平板之间形成的容积可同第一孔与第二孔之间形成的通道流体隔离。因此，流动穿过第一孔360的流体将流动穿过第二孔365并且平板之间的内部容积内的流体将流动穿过第三孔375，且所述流体在经由第二孔或第三孔退出下平板325前将彼此流体隔离。第三孔375可称为第二流体通道，所述通道自内部容积延伸穿过底部平板325。此分离可提供众多益处，包括防止自由基前驱物在到达处理区域前接触第二前驱物。藉由防止气体的相互作用，可在到达需要发生反应的处理区域前最小化腔室内部的反应。
可以与上文所描述的第一孔360的图案对准的图案布置第二孔365。在一个实施例中，当上平板320与底部平板325上下安置时，第一孔360的轴与第二孔365的轴对准。在所揭示的实施例中，上平板及下平板可彼此耦合或直接接合在一起。在任一情境中，可发生平板的耦合以使得第一孔与第二孔对准以形成穿过上平板及下平板的通道。多个第一孔360及多个第二孔365可具有平行或实质平行于彼此的各自的轴(例如，孔360、孔365可为同心)。替代地，多个第一孔360及多个第二孔365可具有彼此成约1°至约30°角度安置的各自的轴。在底部平板325的中心处可存在或可不存在第二孔365。
图3C是根据所揭示的实施例供处理腔室使用的淋喷头325的仰视图。淋喷头325对应图2A中所示的淋喷头。展示第一流体通道219的视图的通孔365可具有多个形状和配置以便控制及影响前驱物穿过淋喷头325的流动。展示第二流体通道221的视图的小孔375可实质均匀地分配于淋喷头的表面上，甚至在通孔365中间，此举可有助于在前驱物退出淋喷头时比其它配置提供更加均匀的前驱物的混合。
图4图示根据所揭示的实施例用于淋喷头或面板的替代布置。如图所示，淋喷头400可包含多孔平板或歧管。淋喷头的组件可与如第3图所示的淋喷头类似，或可包括针对前驱物气体的分配图案特定配置的设计。淋喷头400可包括在示例性处理腔室内部以各种布置安置的环形框架410，诸如图2、图5、图6、图7和/或图9所示的一种或多种布置。框架上或框架内可耦合平板420，在所揭示的实施例中，所述平板可与前文所描述的平板320类似。平板可具有碟形及定位于框架410上或框架410内部。平板可具有各种厚度，并且可包括平板内部界定的多个孔465。图4所示的示例性布置可包括如前文参看图3中的布置所描述的图案，且可包括成几何图案的一系列孔环，诸如如图所示的六边形。应将理解，图示的图案为示例性及应将理解，所述设计中涵盖各种图案、孔口布置及孔间隔。
转至图5，所述图图示根据所揭示的技术的处理系统500的简化示意图。系统500的腔室可包括如前文所论述的任何部件，且可被配置以在腔室的处理区域533中安放半导体基板555。基板555可位于如图所示的基座565上。处理腔室500可包括两个远程等离子体单元或系统(RPS)501a至501b。在所揭示的实施例中，系统500的腔室可包括基于正使用的前驱物数目的两个例示的等离子体单元以上的任何数目的额外等离子体单元。第一RPS单元501a可与系统500的腔室的第一入口505流体耦合，并且可被配置以将第一前驱物经由第一入口505传递至系统500的腔室中。第二RPS单元501b可与系统500的腔室的第二入口510流体耦合，并且可被配置以将第二前驱物经由第二入口510传递至腔室中。示例性配置可包括与腔室的顶部部分耦合的第一入口505及第二入口510。示例性配置可进一步将RPS单元与所述入口耦合以使得第一入口505及第二入口510彼此独立。
第一等离子体单元501a及第二等离子体单元501b可为相同等离子体单元或不同等离子体单元。举例而言，系统中的一者或两者可为RF等离子体系统、CCP等离子体腔室、ICP等离子体腔室、包括环形等离子体系统的磁产生等离子体系统、微波等离子体系统等等，或能够形成等离子体或以其它方式激励和/或分解等离子体中的分子的任何其它系统类型。第一入口505及第二入口510可与腔室的一部分耦合以提供入口至处理腔室的混合区域511。混合区域511可独立于腔室的处理区域533且与所述处理区域流体耦合。可进一步配置混合区域511以允许第一前驱物及第二前驱物在腔室的处理区域533外部彼此相互作用。举例而言，经由第一RPS单元501a传递的第一前驱物及经由第二RPS单元501b传递的第二前驱物可穿过各自入口位置进入混合区域511并在所述区域内部混合以跨越气体混合物的轮廓提供更加均匀的散布。可藉由系统500的腔室的顶部及分配装置(诸如下文的淋喷头509)至少部分地界定混合区域511。在所揭示的实施例中，淋喷头509可与图4所图示的淋喷头类似。淋喷头509可包括多个通道或孔507，所述通道或孔可经安置和/或成形以在行进穿过腔室前影响混合区域511中的前驱物的分配和/或停留时间。举例而言，可藉由调整跨越淋喷头509的孔的数目、孔的大小或孔的配置影响或控制重组。可将诸如介电材料的环之类的间隔件504安置于腔室的顶部与淋喷头509之间以进一步界定混合区域511。如图所示，可将淋喷头509安置于混合区域511与腔室的处理区域533之间，且可配置淋喷头509以穿过腔室500分配第一前驱物及第二前驱物。
系统500的腔室可包括一系列部件中的一者或多者，所述部件可任选地包括于所揭示的实施例中。可将额外面板或淋喷头513安置于淋喷头509下方以便进一步影响穿过腔室引导的前驱物的分配。在所揭示的实施例中，可将混合区域511中至少部分混合的前驱物经由系统的操作压力、腔室组件的布置及前驱物的流动轮廓中的一者或多者引导穿过腔室。可藉由间隔件506分离淋喷头509及面板513，所述间隔件可包括分离两个淋喷头的材料(诸如介电材料、金属或其它成分)的环。面板513可提供前驱物的额外混合及分配以进一步提供穿过混合前驱物的均匀轮廓。面板513可具有与淋喷头509类似的形状或尺寸，且又可具有与图4所图示的淋喷头类似的特性。在所揭示的实施例中，面板513可具有比淋喷头509更大或更小的厚度。另外，可以类似方式使面板513中的通道或孔508成形为淋喷头509中所界定的孔507。在所揭示的实施例中，孔508中的一些或全部可为不同形状，诸如图示具有朝处理区域533向外延伸的锥形部分的形状。
可将额外平板或装置523安置于面板513下方。举例而言，平板523可包括与淋喷头509类似的设计，且可具有与图4所图示的淋喷头类似的布置。可将间隔件510安置于面板513与平板523之间，且所述间隔件可包括如前文所论述的类似部件(诸如介电材料)。可在平板523中界定孔524，且所述孔可经分配及经配置以影响离子物质穿过平板523的流动。举例而言，可配置孔524以至少部分地抑制离子物质被引导流向处理区域533。在所揭示的实施例中，孔524可具有各种形状，包括如前文所论述的通道，及所述孔可包括锥形部分，所述锥形部分背离处理区域533向外延伸。
系统500的腔室可任选地进一步包括腔室内部的气体分配组件525。在诸方面中可与前文所描述的双通道淋喷头类似的气体分配组件525可位于腔室内部，处于处理区域533的顶部部分处或处理区域533上方。可配置气体分配组件525以将第一前驱物及第二前驱物两者传递至腔室的处理区域533中。尽管图5的示例性系统包括双通道淋喷头，但是应理解，可使用替代分配组件，所述替代分配组件在前驱物进入处理区域533前维持第三前驱物与来自第一前驱物及第二前驱物的自由基物质流体相隔离。举例而言，可使用多孔平板及平板下方的管道，但是其它配置可以降低的效率操作或未提供如描述与双通道淋喷头相同的一致处理。藉由使用所揭示设计中的一者，可将第三前驱物引入至处理区域533中，所述第三前驱物在进入处理区域533前未被等离子体预先激励。尽管未图示，可将额外间隔件(诸如环形间隔件)安置于平板523与淋喷头525之间，以使平板彼此隔离。在第三前驱物并非必需的实施例中，气体分配组件525可具有类似于前文所描述的部件中的任一者的设计，且所述气体分配组件可包括与图4所图示的淋喷头类似的特性。
气体分配组件525可包含如前文所论述的上平板及下平板。所述平板可彼此耦合以界定平板之间的容积527。耦合所述平板可使得能提供穿过上平板及下平板的第一流体通道540及穿过下平板的第二流体通道545。可配置所形成的通道以提供自容积527穿过下平板的流体入口，且可将第一流体通道540与介于平板与第二流体通道545之间的容积527流体隔离。经由气体分配组件525的侧面(诸如前文所论述的通道322)可流体进入容积527。所述通道可与腔室中的第三入口耦合，所述第三入口与腔室500的第一入口505及第二入口510分开。
RPS单元501a至501b的等离子体空腔及导向腔室入口505、510的任何机械耦合可由基于被选择以流动穿过RPS单元501a至501b的第一前驱物及第二前驱物的材料制成。举例而言，在某些蚀刻操作中，可使含氟前驱物(例如，NF3)流动穿过第一RPS单元及第二RPS单元中的任一者，诸如RPS单元501a。当在RPS单元501a中形成等离子体时，分子可分解成自由基离子。若RPS单元501a由不变铝(unaltered aluminum)制成，则氟基可与空腔壁反应形成诸如氟化铝的副产物。因此，可利用第一材料形成RPS单元501a，所述第一材料可为(例如)氧化铝、氮化铝或不与第一前驱物相互作用的另一材料。可基于第一前驱物的成分选择RPS单元501a的材料，且可具体选择所述材料以使得前驱物不与腔室部件相互作用。
类似地，第二RPS单元501b可由基于第二前驱物选择的第二材料制成。在所揭示的实施例中，第一材料及第二材料可为不同材料。举例而言，若含氧前驱物(诸如N2O或O2)或含氢前驱物流动穿过第二RPS 501b并形成等离子体，则可能包括O*、NO*、H*等等的分解自由基可与RPS 501b的等离子体空腔相互作用。举例而言，若腔室类似地由氧化铝制成，示例性实施例中的氢基可与所述氧化物相互作用并可能移除保护涂层。因此，RPS单元501b可由不同于第一材料(诸如铝)的第二材料或不与第二前驱物相互作用的另一材料制成。此亦可延伸至腔室的耦合件或各种其它部件。此类涂层或材料选择可改良随时间推移的设备劣化。因此，举例而言，耦合件、间隔件、气体分配组件平板等等可每个包括由一种或多种材料制成的多个平板。此外，腔室可不包括前文所描述的部件中的一者或多者。举例而言，可移除配置中的气体分配组件525，在所述配置中可不需要与等离子体物质维持隔离的第三前驱物。类似地，在所揭示的实施例中，可移除淋喷头509，其中面板513可提供前驱物的适当分布轮廓。
在操作中，RPS单元501a至501b中的一者或两者可用于在单元内部产生等离子体以至少部分游离第一前驱物和/或第二前驱物。在使用含氟前驱物及含氧前驱物的一个示例中，可使含氧前驱物流动穿过第一RPS单元501a且可使含氟前驱物流动穿过第二RPS单元501b。可基于自由基物质的移动距离来配置此配置。尽管图示与系统500的处理腔室距离相等，但是基于RPS单元501的大小及配置，可自腔室进一步移除所述组件中的一者或两者，以使得产生的自由基物质可具有至腔室的较长流动路径。举例而言，在使用含氢前驱物的实施例中，由于氢基具有较短半衰期而可比氟基更加迅速地重组，含氢前驱物可在较短流动路径中流动穿过腔室。然而，应将理解，可使用各种配置，所述配置可使任何前驱物或前驱物的任一者流动穿过任何RPS单元或RPS单元的任一者。又，若将使用额外前驱物于待执行的操作，则可使用额外RPS单元。
在各种实施例中，可以自低于或约10W至高于或约10或15kW之间的功率水平操作RPS单元501a至501b。发明者已有利确定，所揭示技术的额外益处在于可将每个RPS单元的功率及等离子体轮廓针对所使用的特定前驱物来调谐。以此方式，每种等离子体可具有每个RPS单元内部的独立等离子体电位。举例而言，继续含氟前驱物及含氧或含氢前驱物的所述实例，一些常规系统要求需分解的两种前驱物流动穿过相同的RPS单元。除上文所论述的等离子体空腔及RPS单元的电位劣化外，有益于两种前驱物的等离子体轮廓可为不可用的。继续所述实例，可在RPS单元中以相对低水平的功率处理包括NF3的含氟前驱物。藉由在处于或低于100W、200W、400W、达1000W或以上的功率水平操作RPS，可将前驱物分解至不完全电离粒子的较低程度，且所述前驱物包括独立自由基，所述独立自由基亦包括NF及NF2物质。另外，由于可能需要完全分解，可在高得多的功率水平下操作处理含氧或含氢前驱物的RPS单元。因此，可在达或高于约1000W与达或高于约10kW之间或以上操作RPS单元。在不同实施例中，在示例性处理系统中施加的RF频率可为小于约500kHz的低RF频率、介于约10MHz与约15MHz之间的高RF频率或者大于或约1GHz的微波频率。因此，可配置第一RPS单元501a以在基于第一前驱物的成分所选择的第一功率水平下操作，且可配置第二RPS以在基于第二前驱物的成分所选择的第二功率水平下操作。可配置两个RPS单元501a至501b以在彼此不同的功率水平下操作。此配置可需要分离或解耦电源以及其它变化。
本发明配置的进一步优势可基于各别前驱物的流动速率。最初，如前文所论述的，第一前驱物及第二前驱物中的一者或两者可利用一种或多种载气而流动。然而，示例性操作中所使用的每种前驱物的量可能不类似，此情况可不利地影响包括单个RPS单元的常规系统。举例而言，若第一前驱物及第二前驱物流动穿过单个RPS单元，增加一种前驱物的流动可需要增加第二前驱物的流动以确保每种物质产生适当量的自由基物质。这可能因增加其它前驱物的量而稀释相应前驱物中的任一者而发生。然而，在本发明技术中，可基于单独经电离的前驱物克服此问题。因此，可藉由允许个体调配前驱物流提供进一步工艺调谐，同时仍提供其它前驱物源的适当的自由基物质。
可藉由操作RPS单元中的一者而非其它者来提供额外灵活性。举例而言，可使含氟前驱物流动穿过第一RPS单元501a，所述第一RPS单元经配置以在基于前驱物可能较低的功率水平下操作。可使含氧或含氢前驱物流动穿过未形成等离子体的第二RPS单元501b，以使得分子前驱物流至混合区域511。当第一前驱物及第二前驱物分开地进入混合区域511时，两者可相互作用，且在RPS单元501a中已至少部分自由基化的第一前驱物可电离第二前驱物的一部分，在此情况下可改良系统的功率效率。基于所述实例，应理解，可基于各种操作特性反转或改变本发明技术的所揭示实施例中的许多方面。
另外，可在介于前文所论述的部件中的两者或更多者之间所界定的腔室的区域中形成先前所描述的等离子体。藉由提供诸如CCP源之类的额外等离子体源，RPS单元中所产生的等离子体颗粒可延续或增强，且可进一步调谐重组的速率。举例而言，可在面板508与平板523之间形成诸如前文所描述的第一等离子体区域515之类的等离子体区域。间隔件510可维持两个装置彼此电气隔离，以便允许形成等离子体场。可电气地充电面板508，同时可将平板523接地或DC偏压以在平板之间所界定的区域内部产生等离子体场。可另外涂覆或风干(season)平板以便最小化中间可形成等离子体的部件的劣化。平板可另外包括不太可能劣化或受影响的成分，包括陶瓷、金属氧化物等等。
操作常规CCP等离子体可劣化腔室部件，此举可移除可能无意中分布于基板上的颗粒。此类颗粒可影响由所述基板形成的装置的性能，因为金属颗粒可提供跨越半导体基板的短路。然而，可在减小或实质减小的功率下操作所揭示技术的CCP等离子体，因为CCP等离子体仅可用于维持等离子体，而不用于电离等离子体区域内部的物质。举例而言，可在低于或约1kW、500W、250W、100W、50W、20W等等或更小的功率电平下操作CCP等离子体。此外，CCP等离子体可产生平面等离子体轮廓，此举可提供空间内部的均匀等离子体分布。因此，可将更加均匀的等离子体向下游传递至腔室的处理区域。
图6图示根据所揭示的技术的处理系统600的横截面简化图。系统600的处理腔室可包括前文相对于图5的处理腔室所描述的部件中的一些或全部部件。举例而言，可配置处理腔室以在腔室的处理区域633中安放半导体基板655。基板655可位于如图所示的基座665上。系统600可包括两个或两个以上的远程等离子体单元或系统(RPS)601a至601b。系统600可包括如前文所论述的第一RPS单元601a及第二RPS单元601b，可配置所述单元以将自由基化前驱物提供至处理腔室。如图所示，可以与腔室的单个入口耦合的方式将第一RPS单元及第二RPS单元流体耦合至腔室。因此，在所揭示的实施例中，在可沿处理腔室的顶表面定位的单个位置605处耦合第一入口及第二入口。在前驱物进入腔室的混合区域611中前，可配置第一RPS单元601a及第二RPS单元601b与单个入口605的耦合以允许第一前驱物及第二前驱物相互作用。
将RPS单元601耦合至腔室的部件可包括若干种布置的管道614。举例而言，可以如图所示的Y形连接布置管道或例如以如图2所示的T形连接来布置。各种其它布置及连接可类似地用于耦合RPS单元601。可用材料涂覆或产生管道614，所述材料被设计成与可流动穿过RPS单元的前驱物具有很少相互作用或无相互作用。管道614可形成有旋条、滚花或其它设计，所述设计经配置以在进入腔室前提供前驱物的涡流(turbulence)及混合。单独激励的前驱物可在入口605上方相互作用以提供额外混合，此举可提供穿过腔室的前驱物的改良的分布均匀性。可在诸如面板603的顶部平板中形成入口605，所述平板至少部分地界定混合区域611。可藉由平板623另外界定混合区域，所述平板可经配置以抑制离子物质流入处理区域633中。
举例而言，平板623可包括与图4所图示的淋喷头类似的设计及可具有类似的布置。可将间隔件610安置于面板603与平板623之间，及所述间隔件可包括如前文所论述的类似部件(诸如介电材料)。可在平板623中界定孔624，且所述孔624可被分布并配置成影响离子物质穿过平板623的流动。举例而言，可配置孔624以至少部分地抑制导向处理区域633的离子物质的流动。在所揭示的实施例中，孔624可具有各种形状，包括如前文所论述的通道，且所述孔可包括锥形部分，所述锥形部分背离处理区域633向上延伸。
系统600可进一步包括腔室内部的气体分配组件625。在诸方面中可与前文所描述的双通道淋喷头类似的气体分配组件625可位于腔室内部，处于处理区域633的顶部部分处或处理区域633上方。可配置气体分配组件625以将第一前驱物及第二前驱物两者传递至腔室的处理区域633中。尽管图6的示例性系统包括双通道淋喷头，但是应理解，可使用替代分配组件，所述替代分配组件在前驱物进入处理区域633前维持第三前驱物与第一前驱物及第二前驱物的自由基物质流体隔离。尽管未图示，可将额外间隔件(诸如环形间隔件)安置于组件623与淋喷头625之间，以使平板彼此隔离。在第三前驱物并非必需的实施例中，气体分配组件625可具有类似于前文所描述的部件中的任一者的设计，且所述气体分配组件可包括与图4所图示的淋喷头类似的特性。
气体分配组件625可包含如前文所论述的上平板及下平板。所述平板可彼此耦合以界定平板之间的容积627。可耦合所述平板以便提供穿过上平板及下平板的第一流体通道640及穿过下平板的第二流体通道645。形成的通道可被配置成提供自容积627穿过下平板的流体入口，且可将第一流体通道640与介于平板与第二流体通道645之间的容积627流体隔离。经由气体分配组件625的侧面(诸如前文所论述的通道322)可流体进入容积627。所述通道可与腔室中的第三入口耦合，所述第三入口与腔室600的第一入口605分开。
可在介于前文所论述的组件中的两者或更多者之间所界定的腔室的区域中形成先前所描述的等离子体。藉由提供诸如CCP源之类的额外等离子体源，可如前文所描述地进一步调谐等离子体流出物。举例而言，可在面板603与组件623之间的混合区域611中形成诸如前文所描述的第一等离子体区域615之类的等离子体区域。间隔件610可维持两个装置彼此电气隔离，以便允许形成等离子体场。可电气地充电面板603，同时可将组件623接地或DC偏压以在平板之间所界定的区域内部产生等离子体场。可另外涂覆或风干平板以便最小化中间可形成等离子体的部件的劣化。平板可另外包括不太可能劣化或受影响的成分，包括陶瓷、金属氧化物等等。
藉由在混合区域611内部产生等离子体，来自CCP的等离子体流出物可经由入口605回流及经由管道614行进返回，此举可劣化部件。因此，可将阻块602(诸如被配置以抑制回流等离子体的网目筛或装置)并入管道614或入口605以保护诸如RPS单元601及管道614之类的上游部件。
在所揭示的实施例中，系统600腔室亦可不包括CCP等离子体能力，且可例如专门自RPS单元601a至601b制造等离子体产物。产生CCP等离子体常常可劣化形成等离子体的腔室部分，此劣化可引发金属或其它材料自腔室表面溅射。自腔室位移的颗粒可穿过腔室区域且在正执行处理操作的基板上沉积或与基板相互作用。以此方式，最后产生的基板可能由于包括了自腔室表面位移的金属材料、导电材料或其它材料而具有诸如发生短路之类的性能问题。
图7图示根据所揭示的技术的处理腔室系统700的横截面简化图。处理系统700可包括前文相对于图5及图6的处理系统500和/或600所描述的部件中的一些或全部部件。举例而言，可配置处理系统700以在腔室的处理区域733中安放半导体基板755。基板755可位于如图所示的基座765上。处理系统700可包括两个或两个以上的远程等离子体单元或系统(RPS)701a至701b。所述系统可包括如前文所论述的第一RPS单元701a及第二RPS单元701b，可配置所述单元以将自由基化前驱物提供至处理腔室。
如图所示，可将第一RPS单元及第二RPS单元与腔室的侧面部分流体耦合。可将第一入口705及第二入口710彼此单独安置。可将第一入口705及第二入口710与围绕腔室径向分布的气室712流体耦合。可围绕腔室的外围耦合气室712，且所述气室可经配置以在遍及气室712的多个位置处提供入口至腔室的混合区域711。亦可在腔室外壳的范围内定位气室712，但所述气室可具有至少部分地界定混合区域711的环形形状。向混合区域711提供入口的遍及气室712的多个位置可包括围绕气室712的内部部分所界定的端口或孔714。可安置或配置端口714以提供前驱物从气室712至混合区域711的更加均匀的传递。在所揭示的实施例中，气室712的内壁可界定2个或两个以上的端口714，且可界定多于或约4个端口、6个、7个、8个、9个、10个、12个、15个、20个、25个、30个、40个、50个等等或更多个端口，所述端口围绕气室712界定。
在所揭示的实施例中，可在进入气室712前诸如使用前文所描述的耦合件或管道耦合第一入口705及第二入口710。因此，在所揭示的实施例中，在可沿处理腔室的顶表面或沿腔室外壳的侧面部分定位的单个位置处耦合第一入口及第二入口。在前驱物进入气室712及腔室的混合区域711前，可配置第一RPS单元701a及第二RPS单元701b与单个入口的耦合以允许第一前驱物及第二前驱物相互作用。
单独激励前驱物可围绕气室712相互作用以提供额外混合，此举可提供穿过腔室的前驱物的改良的分布均匀性。如所论述，所述气室可至少部分地界定混合区域711，可藉由诸如面板703之类的顶部平板进一步部分界定所述混合区域。可藉由平板723额外界定混合区域，所述平板可经配置以抑制离子物质流入处理区域733中。
举例而言，平板723可包括与图4所图示的淋喷头类似的设计及可具有类似的布置。可利用介电材料形成或涂覆气室712的外壳，所述介电材料可允许面板703与平板723彼此电气隔离，如下文将进一步描述的。可在平板723中界定孔724，及所述孔可被分布并配置成影响离子物质穿过平板723的流动。举例而言，可配置孔724以至少部分地抑制导向处理区域733的离子物质的流动。在所揭示的实施例中，孔724可具有各种形状，包括如前文所论述的通道，且所述孔可包括如图所示的锥形部分，所述锥形部分背离处理区域733向上延伸。
系统700可进一步包括腔室内部的气体分配组件725。在诸方面中可与前文所描述的双通道淋喷头类似的气体分配组件725可位于系统700腔室内部，处于处理区域733的顶部部分处或处理区域733上方。可配置气体分配组件725以将第一前驱物及第二前驱物两者传递至腔室的处理区域733中。尽管图7的示例性系统包括双通道淋喷头，但是应理解，可使用替代分配组件，所述分配组件在前驱物进入处理区域733前维持第三前驱物与第一前驱物及第二前驱物的自由基物质流体隔离。尽管未图示，可将额外间隔件(诸如环形间隔件)安置于平板723与淋喷头725之间，以使平板彼此隔离。在第三前驱物并非必需的实施例中，气体分配组件725可具有类似于前文所描述的部件中的任一者的设计，且所述气体分配组件可包括与图4所图示的淋喷头类似的特性。
气体分配组件725可包含如前文所论述的上平板及下平板。所述平板可彼此耦合以界定平板之间的容积727。耦合所述平板可使得能提供穿过上平板及下平板的第一流体通道740及穿过下平板的第二流体通道745。形成的通道可被配置成提供自容积727穿过下平板的流体入口，且可将第一流体通道740与介于平板与第二流体通道745之间的容积727流体隔离。经由气体分配组件725的侧面(诸如前文所论述的通道322)可流体进入容积727。所述通道可与腔室中的第三入口耦合，所述第三入口与系统700腔室的第一入口705分开。
可在介于前文所论述的部件中的两者或更多者之间所界定的系统700腔室的区域中形成先前所描述的等离子体。藉由提供诸如CCP源之类的额外等离子体源，可如前文所描述地进一步调谐等离子体流出物。举例而言，可在面板703与平板723之间的混合区域711中形成诸如前文所描述的第一等离子体区域715之类的等离子体区域。如所论述，气室712的外壳可维持两个装置彼此电气隔离以便允许形成等离子体场。可电气地充电面板703，同时可将平板723接地或DC偏压以在平板之间所界定的区域内部产生等离子体场。可另外涂覆或风干平板以便最小化中间可形成等离子体的部件的劣化。平板可另外包括不太可能劣化或受影响的成分，包括陶瓷、金属氧化物等等。
图8图示图7所例示的系统700腔室沿线A-A截取的横截面部分的俯视平面图。如前文所描述的，可藉由包括外壁802及内壁804的外壳界定气室812。外壳可为邻近材料或可为两种独立材料，包含内壁804及外壁802。可经由任何数目的入口点将入口提供至气室812，所述入口可包括第一入口805及第二入口810。举例而言，可提供至气室的单个入口，两个或两个以上的RPS单元可藉由所述入口将等离子体流出物传递至处理腔室中。如图所示，第一入口805可界定一个或多个间隙(space)806以提供围绕气室空间812的入口。如图所示，两个间隙806a及806b被示为在自第一入口805的多个方向上提供入口。在所揭示的实施例中，第一入口805可包括较少或较多间隙806，藉由所述空间可将第一前驱物传递至气室。举例而言，可界定单个间隙806a以允许自单个位置进入气室805中。另外，尽管图示为经界定至外壁802，但是第一入口805可例如具有比界定气室812的外壁802与内壁804之间的距离更小的半径。因此，可提供自第一入口805导向外壁802(未图示)的额外间隙806。此外，尽管图示为延伸至气室812以提供对传递的前驱物的额外流动控制，但是第一入口805可包括气室812的顶部部分处的入口以使得前驱物可仅以未导向的当前流动穿过气室812向下及向外流动。
类似配置可具有第二入口810，可藉由所述第二入口将第二前驱物经由气室812传递至腔室中。第二入口810可包括向气室空间812提供入口的一个或多个间隙813。如图所示，两个间隙813a及813b被示为在自第二入口810的多个方向上提供入口。可如上文相对于第一入口805所论述提供类似修改。在自第一入口805及第二入口810中的每一个提供单个间隙的示例性配置中，可在类似方向或相反方向上提供所述间隙。举例而言，若藉由第一入口805界定间隙806a以在围绕气室812的一个方向上导向前驱物，则可藉由第二入口810界定间隙813b以在围绕气室812的反向方向上导向第二前驱物。类似地涵盖应将理解的各种替代。另外，如相对于第一入口805所论述，第二入口810可仅对气室外壳的顶部开口，以使得在前驱物被传递至气室812时对前驱物不提供另外的方向，且前驱物可围绕气室812自然流动。
如前文所描述，气室812的内壁804可至少部分地界定混合区域811。可贯穿内壁804周围的距离界定端口或孔814以提供入口，在经由端口824穿过组件823前，前驱物可藉由所述入口进入混合区域811。在所揭示的实施例中，可以各种方式沿内壁804界定端口814(诸如端口814x)，且所述端口可具有如图所示的直腔类型特性，或所述端口可朝向混合区域811或背离混合区域811倾斜以提供可控制或调谐前驱物的分布的另外的方式。如图所示，图示端口814a及814b分别靠近第一入口805及第二入口810。在所揭示的实施例中，可包括或不包括所述端口以进一步影响进入混合区域811中的前驱物的分布。亦可以结构化或变化间隔移除额外端口814，在此情况下内壁804沿未界定端口814的区段保持连续。一旦导向或允许所传递的前驱物沿气室812流动及穿过端口814流动，所述前驱物可相互作用及在混合区域811中进一步混合。前驱物混合物可随后经由穿过组件823的孔824流向处理区域，在所述处理区域中可使用例如前驱物来执行基板上的蚀刻工艺。
图9图示根据所揭示的技术的处理腔室的横截面简化图。处理腔室系统900可包括前文相对于图5、图6或图7中任一者所描述的系统描述的部件中的一些或全部部件。举例而言，可配置系统900腔室以在腔室的处理区域933中安放半导体基板955。基板955可位于如图所示的基座965上。系统900的处理腔室可包括两个或两个以上的远程等离子体单元或系统(RPS)901a至901b。所述腔室可包括如前文所论述的第一RPS单元901a及第二RPS单元901b，可配置所述单元以将自由基化前驱物提供至处理腔室。第一RPS单元901a可与腔室的第一入口905流体耦合且可经配置以将第一前驱物经由第一入口905传递至腔室中。第二RPS单元901b可与腔室的第二入口910流体耦合且可经配置以将第二前驱物经由第二入口910传递至腔室中。示例性配置可包括与腔室的顶部部分耦合的第一入口905及第二入口910。示例性配置可进一步将RPS单元与所述入口耦合以使得第一入口905及第二入口910彼此独立。
RPS单元901中所产生的单独激励的前驱物可经导向或以其它方式流入混合区域911中，在所述混合区域中所述前驱物可混合以提供穿过腔室的前驱物的改良的分布均匀性。可在诸如面板903之类的顶部平板中形成入口905、910，所述平板至少部分地界定混合区域911。可藉由淋喷头或部分909、914的配置另外界定混合区域，所述淋喷头或配置可用于分配穿过腔室的前驱物。间隔件908可另外界定混合区域911的一部分。
包括部分909、914的淋喷头可包括一个、两个或更多个平板或部件，所述平板或部件经配置以影响前驱物的分布。如图所示，部件909可包含环形平板，所述环形平板与安置于环形平板909下方的平板结构914耦合。在所揭示的实施例中，可与环形平板909对齐安置平板914。在所揭示的实施例中，环形平板909及平板914可由类似或不同材料组成。举例而言，环形部分909可由介电材料或其它不导电材料形成，而平板914可包含金属或其它导电部分，所述金属或导电部分可充当电极，如下文所论述。作为另一实例，部分909、914两者可包含导电金属，且间隔件908、912可将平板与系统900腔室的其它部分电气隔离。可在环形部分909中界定孔907，混合前驱物可流动穿过所述孔。
可将平板923安置于包括部分909、914的淋喷头的下方及可配置所述平板以抑制离子物质流入处理区域933中。举例而言，平板923可包括与图4所图示的淋喷头类似的设计及可具有类似的布置。可将间隔件912安置于包括部分909、914的淋喷头与平板923之间，且所述间隔件可包括如前文所论述的类似部件，诸如介电材料。可在平板923中界定孔924，及所述孔可被分布并配置成影响离子物质穿过平板923的流动。举例而言，可配置孔924以至少部分地抑制导向处理区域933的离子物质的流动。在所揭示的实施例中，孔924可具有各种形状，包括如前文所论述的通道，且所述孔可包括锥形部分，所述锥形部分背离处理区域933向上延伸。如图所示，可藉由包括部分909、914的淋喷头及平板923至少部分地界定区域915。此区域可允许前驱物的额外混合或前驱物的处理，如下文所论述。
系统900的腔室可进一步包括腔室内部的气体分配组件925。在诸方面中可与前文所描述的双通道淋喷头类似的气体分配组件925可位于系统900腔室内部，处于处理区域933的顶部部分处或处理区域933上方。可配置气体分配组件925以将第一前驱物及第二前驱物两者传递至腔室900的处理区域933中。尽管图9的示例性系统包括双通道淋喷头，但是应理解，可使用替代分配组件，所述替代分配组件在前驱物进入处理区域933前维持第三前驱物与第一前驱物及第二前驱物的自由基物质流体隔离。尽管未图示，可将额外间隔件(诸如环形间隔件)安置于组件923与淋喷头925之间，以使平板彼此隔离。在第三前驱物并非必需的实施例中，气体分配组件925可具有类似于前文所描述的部件中的任一者的设计，且所述气体分配组件可包括与图4所图示的淋喷头类似的特性。
气体分配组件925可包含如前文所论述的上平板及下平板。所述平板可彼此耦合以界定平板之间的容积927。耦合所述平板以使得能提供穿过上平板及下平板的第一流体通道940及穿过下平板的第二流体通道945。形成的通道可被配置成提供自容积927穿过下平板的流体入口，且可将第一流体通道940与介于平板与第二流体通道945之间的容积927流体隔离。经由气体分配组件925的侧面(诸如前文所论述的通道322)可流体进入容积927。所述通道可与腔室中的第三入口耦合，所述第三入口与系统900腔室的第一入口905及第二入口910分开。
可在介于前文所论述的部件中的两者或更多者之间所界定的系统900腔室的区域中形成先前所描述的等离子体。藉由提供诸如CCP源之类的额外等离子体源，可如前文所描述地进一步调谐等离子体流出物。举例而言，在包括部分909、914的淋喷头与平板923之间所界定的区域中可形成某些方面中可与前文所描述的第一等离子体区域215类似的等离子体区域915。间隔件912可维持两个装置彼此电气隔离，以便允许形成等离子体场。在所揭示的实施例中，可藉由如先前所论述的部分909来电气充电及隔离淋喷头的部分914，所述部分909例如可以是电绝缘的。可部分或全部地电气充电淋喷头，同时可将平板923接地或DC偏压以在平板之间所界定的区域内部产生等离子体场。可另外涂覆或风干平板以便最小化中间可形成等离子体的部件的劣化。平板可另外包括不太可能劣化或受影响的成分，包括陶瓷、金属氧化物等等。
图10图示图9所例示的处理腔室沿线B-B截取的横截面部分的俯视平面图。包括部分1009及1014的淋喷头1000可包括如前文所论述的一个或多个平板或部件。部分1009可包括淋喷头的外部环形部分，所述外部环形部分围绕淋喷头1000的内部部分1014。外部部分1009的平面内可含有部分1014，或可将部分1014安置或定位于外部部分1009的上方或下方。可将内部部分焊接或以其它方式与外部部分机械耦合或机械耦合至外部部分以形成淋喷头1000。外部部分1009可包括区段1016，所述区段可为淋喷头1000的外部部分1009的环形内部部分。区段1016可为与外部部分1009及内部部分1014两者皆耦合的额外环形区段。区段1016可包括区段1016内部所界定的多个孔1007，所述孔提供穿过淋喷头1000的入口。可以各种图案界定孔1007，诸如如图所示的环状图案。在所揭示的实施例中，淋喷头1000可包括或可不包括内部部分1014中的孔。举例而言，内部部分1014可缺少孔，在自淋喷头1000的中心点延伸的区域中可不形成孔。基于淋喷头的径向长度，淋喷头可不包括围绕淋喷头的内部部分1014的孔1007，所述内部部分至少自淋喷头的中心点延伸至淋喷头的至少10％的径向长度内部所界定的区域。自淋喷头的中心点延伸至至少约15％、20％、25％、30％、35％、40％、45％、50％、60％等等或更多的径向长度内部所界定的区域的淋喷头的内部部分1014内可不另外包括孔。
尽管图示为单个环的孔1007，但是区段1016可包括超过一个环的孔1007。可以各种间隔安置孔1007，所述间隔可包括孔1007之间的连续间隔以及变化间隔或不一致间隔。若包括多行的孔1007(诸如2、3、4、5、6、7、8、9等等行或更多行的孔)，可在行之间替换孔或所述孔处于延伸出淋喷头1000的中心点的淋喷头的半径的径向对准中。在所揭示的实施例中，外部部分1009可具有等于、大于或小于内部部分1014的厚度的厚度。另外，部分1016可具有等于、大于或小于外部部分1009及内部部分1014的一者或两者的厚度的厚度。部分1009、1014及1016中的各者所包括的材料可与淋喷头1000的其它部分中的任一者类似或不同。举例而言，区段1016可具有与外部部分1009及内部部分1014两者皆不同的材料，所述外部部分及所述内部部分可包括彼此类似或不同的材料。举例而言，外部部分1009及内部部分1014可包括金属或导电材料，而区段1016包括允许内部部分1014与系统的其它部分电气隔离的介电材料。在所揭示的实施例中，外部部分1009及区段1016可具有诸如介电材料之类的类似不导电材料，而内部部分1014可由导电材料制成。本发明技术类似涵盖应将理解的各种其它配置。
为了更好地理解及了解所描述的技术，现将参看图11，所述图系根据所揭示的实施例的蚀刻工艺的流程图。应理解，本发明技术可类似地用于替代配置中的沉积工艺。在第一操作前，可在图案化基板中形成结构。所述结构可具有硅、氧化物、氮化物、包括钨、铜、钛、钽等等的金属的独立暴露区域或其它部件。硅可为非晶体、晶体或多晶体(在此情况下通常称为多晶硅)。可已在相同腔室中或尚未在相同腔室中执行上述沉积及形成工艺。若在不同腔室中执行所述工艺，则可将基板转移至诸如上述的系统中。
在操作1110处，可使诸如含氧前驱物或含氢前驱物的第一前驱物流入与基板处理区域分开的第一等离子体区域中。独立等离子体区域在本文中可称为远程等离子体区域且可处于与处理腔室不同的模块内部或为处理腔室内部的隔室。大体而言，含氢或含氧前驱物可流入第一等离子体区域(诸如前文所论述的第一RPS单元)，在所述区域中用等离子体激励前驱物，且含氢或含氧前驱物可包含选自H2、NH3、O2、O3、N2O、烃或类似者的至少一种前驱物。在操作1120处，可将诸如三氟化氮或不同含氟前驱物之类的第二前驱物流引入至第二远程等离子体区域中，在所述区域中用等离子体激励所述前驱物。可以前文所论述的任何方式操作第一等离子体系统及第二等离子体系统，且在所揭示的实施例中，可使含氢或含氧前驱物及含氟前驱物流动穿过替代RPS单元。可使用其它氟源强化或替换三氟化氮。大体而言，可使含氟前驱物流入第二远程等离子体区域中且含氟前驱物可包括选自由以下物质组成的群组中的至少一种前驱物：原子氟、双原子氟、三氟化溴、三氟化氯、三氟化氮、氟化氢、氟代烃、六氟化硫及二氟化氙。第一前驱物及第二前驱物中的一者或两者可包括于诸如前文所论述的那些的载体前驱物中。
在操作1130处，在远程等离子体区域中由第一前驱物及第二前驱物所形成的等离子体流出物可随后单独流入腔室的混合区域中并随后在所述混合区域中组合。可将混合区域流体定位于基板(诸如图案化基板)所在的腔室的处理区域的上游。若正在执行腔室清洗操作，则可在这些操作期间不将基板定位于腔室中。前驱物的气体流动比率可包括各种流动比率，诸如小于、大于或约1:1000、1:500、1:250、1:100、1:50、1:25、1:15、1:10、1:5、1:1、5:1、10:1、15:1、25:1、50:1、100:1、250:1、500:1、1000:1等等的流动比率(O或H:F)。暴露的钨、氮化钛或其它金属的区域亦可存在于图案化基板上且可称为暴露的金属区域。举例而言，可将前驱物传递至处理区域及可使前驱物与基板材料反应以执行蚀刻操作。可将反应性化学物质从基板处理区域中移除且随后可将基板从处理区域中移除。
含氟前驱物和/或含氧或含氢前驱物可进一步包括一个或多个相对惰性气体，诸如He、N2、Ar或类似者。惰性气体可用于改良等离子体稳定性和/或将液体前驱物载送至远程等离子体区域。可使用不同气体的流动速率和比率来控制蚀刻速率及蚀刻选择性。在实施例中，含氟气体可包括NF3，流动速率介于约1sccm(标准立方厘米每分钟)与5000sccm之间。可包括含氢或含氧前驱物，流动速率介于约1sccm与5000sccm之间，且可与任一前驱物液流一起包括流动速率介于约0sccm与3000sccm之间的一种或更多种载气。在所揭示的实施例中，可保持O或H:F的原子流动速率或比率处于高位以减少或消除基板材料上的固体残余物(诸如氧化物)形成。固体残余物的形成消耗一些氧化硅，此情况可减少蚀刻工艺的硅选择性。在本发明技术的实施例中，O或H:F的原子流动比率可大于或约五、二十五(亦即，25:1)、大于或约30:1或大于或约40:1。
藉由维持前驱物流体独立，可减少或消除腐蚀及与RPS系统的其它相互作用。如上文所描述，包括气体分配组件的RPS单元及分配部件可由基于正经传递的前驱物而选择且因此被选择成防止经电离前驱物与设备之间的反应的材料制成。
在本发明技术的实施例中，离子抑制器可用于在等离子体流出物自远程等离子体区域转移至基板处理区域期间过滤来自等离子体流出物的离子。离子抑制器用以减少或消除自等离子体产生区域行进至基板的离子带电物质。不带电中性及自由基物质可穿过离子抑制器中的开口以在基板上反应。应注意，完全消除围绕基板的反应区域中的离子带电物质并非总是所欲目标。在许多情况中，需要离子物质到达基板以便执行蚀刻和/或沉积工艺。在所述情况中，离子抑制器有助于将反应区域中的离子物质的浓度控制在辅助工艺的水平上。在所揭示的实施例中，气体分配组件的上平板可包括离子抑制器。
在蚀刻工艺期间，基板的温度可高于0℃。或者，基板温度可高于或约为20℃及低于或约为300℃。在此基板温度范围的高端时，蚀刻速率可下降。在此基板温度范围的低端时，可开始蚀刻替代部件且因此选择性可下降。在所揭示的实施例中，本文所描述的蚀刻期间的基板温度可高于或约为30℃同时低于或约为200℃，或者高于或约为40℃同时低于或约为150℃。在所揭示的实施例中，基板温度可低于100℃、低于或约为80℃、低于或约为65℃或者低于或约为50℃。
可针对各种操作类似地调整工艺压力。在所揭示的实施例中，基板处理区域内部的压力可为低于或约为10托、低于或约为5托、低于或约为3托、低于或约为2托、低于或约为1托或者低于或约为750毫托。在本发明技术的实施例中，为了确保适当蚀刻速率，压力可低于、高于或约为0.02托且范围达约大气压力或约760托。额外实例、工艺参数及操作步骤在与本文所描述的传递机制不矛盾的程度上包括于前文并入的申请案第13/439079号中。可基于正执行的等离子体处理调制或确定压力。可在比远程等离子体工艺更高的压力下操作CCP等离子体操作。在实施例中，基于使用RPS单元，操作压力可低于约20托。然而，在所揭示的实施例中，可调整RPS单元的大小或配置RPS单元以在约5托、10托、20托、50托、100托以上、直至约760托或以上的压力下操作。
可在如前文所描述的任何等离子体功率下操作激励前驱物的RPS单元。在所揭示的实施例中，可在类似或不同功率水平下操作RPS单元。举例而言，可在第一等离子体功率水平下激励第一远程等离子体单元中所激励的第一前驱物。可在第二等离子体功率水平下激励第二远程等离子体单元中所激励的第二前驱物。在任一等离子体功率水平大于其它功率水平的情况下，第一等离子体功率水平与第二等离子体功率水平可彼此类似或不同。
在先前描述中，出于解释的目的，已阐述众多细节以便提供对本发明技术的各种实施例的理解。然而，对本领域技术人员将显而易见的是，可在没有所述细节中的一些细节或具有额外细节的情况下实施某些实施例。
在已揭示了若干实施例的情况下，本领域技术人员将认识到，在不脱离所揭示的实施例的精神的情况下，可使用各种修改、替代构造及等效物。另外，并未描述众多熟知工艺及组件以免不必要地模糊本发明技术。因此，不应将上文描述视为限制本发明技术的范畴。
在提供值范围的情况下，应理解，亦具体揭示介于彼范围的上限与下限之间的每个中间值(精确到下限单位的最小分数)，除非上下文另有清楚指示。涵盖在所述范围中的任何所述值或未述中间值与彼所述范围中的任何其它所述值或中间值的间的每个较小范围。那些较小范围的上限及下限可独立被包括或不包括在所述范围内，且在受限于所述范围中任何具体排除的限制的情况下，本发明技术中亦涵盖其中较小范围内包括所述限制中一者、不包括所述限制两者或包括所述限制两者的每个范围。在所述范围包括所述限制中的一者或两者的情况下，亦包括不包括彼等所包括限制中的一者或两者的范围。
如本文所使用及在随附申请专利范围中所使用，除非上下文另有清楚指示，否则单数形式的“一”、“一个”及“所述”包括多个引用。因此，例如，对“一孔”的引用包括多个此类孔，及对“所述平板”的引用包括引用一个或多个平板及为本领域技术人员所知的平板等效物等等。
又，当在本说明书及以下申请专利范围中使用时，措辞“包括”、“包含”、“包含有”、“含有”、“包括有”及“包括了”意欲指定所述特征、整数、部件或步骤的存在，但并未排除一个或多个其它特征、整数、部件、步骤、行为或群组的存在或添加。

Claims (20)

1.一种用于半导体处理的系统，所述系统包含：
腔室，所述腔室经配置以在所述腔室的处理区域中包含半导体基板；
第一远程等离子体单元，所述第一远程等离子体单元与所述腔室的第一入口流体耦合且经配置以将第一前驱物经由所述第一入口传递至所述腔室中；
第二远程等离子体单元，所述第二远程等离子体单元与所述腔室的第二入口流体耦合且经配置以将第二前驱物经由所述第二入口传递至所述腔室中，其中将所述腔室的所述第一入口及所述第二入口与所述腔室的混合区域流体耦合，所述混合区域与所述腔室的所述处理区域分开且与所述处理区域流体耦合，并且其中配置所述混合区域以允许所述第一前驱物及所述第二前驱物在所述腔室的所述处理区域外部彼此相互作用；
安置于所述腔室内且至少部分界定所述混合区域的淋喷头；
安置于所述腔室内在所述腔室的所述淋喷头与基板处理区域之间的面板；
安置于所述腔室内在所述面板和所述腔室的所述基板处理区域之间的离子抑制器，其中所述面板被电耦合到RF源，其中所述离子抑制器电接地，且其中所述腔室被配置成在作为电容耦合等离子体的电极操作的所述面板和所述离子抑制器之间产生所述电容耦合等离子体；以及
安置于所述面板和所述离子抑制器之间并接触所述面板和所述离子抑制器的环形介电插入件，其中所述环形介电插入件将所述面板和所述离子抑制器彼此电绝缘。
2.如权利要求1所述的系统，其中所述离子抑制器经配置以至少部分地抑制导向所述腔室的所述处理区域的离子物质的流动。
3.如权利要求1所述的系统，其中所述腔室进一步包含位于所述腔室内部的气体分配组件，所述气体分配组件处于所述腔室的所述处理区域的顶部部分处或所述处理区域上方，且经配置以将所述第一前驱物及所述第二前驱物两者传递至所述腔室的所述处理区域中。
4.如权利要求3所述的系统，其中所述气体分配组件包含上平板及下平板，其中所述上平板及所述下平板彼此耦合以界定所述平板之间的容积，其中所述平板的耦合提供穿过所述上平板及所述下平板的第一流体通道及穿过所述下平板的第二流体通道，所述通道经配置以提供自所述容积穿过所述下平板的流体入口，并且其中所述第一流体通道与所述平板与所述第二流体通道之间的所述容积流体隔离。
5.如权利要求4所述的系统，其中经由所述气体分配组件的侧面能流体进入所述容积，所述气体分配组件与所述腔室中的第三入口流体耦合，所述第三入口与所述腔室的所述第一入口及所述第二入口分开。
6.如权利要求1所述的系统，其中将所述第一入口及所述第二入口与所述腔室的顶部部分耦合，且所述第一入口及所述第二入口彼此分开。
7.如权利要求1所述的系统，其中将所述第一入口及所述第二入口在单个位置处与所述腔室的顶部部分耦合，且所述第一远程等离子体单元及所述第二远程等离子体单元与所述单个入口的耦合经配置以允许所述第一前驱物及所述第二前驱物在进入所述腔室的所述混合区域前相互作用。
8.如权利要求1所述的系统，其中将所述第一入口及所述第二入口与所述腔室的侧面部分耦合，且所述第一入口及所述第二入口彼此分开。
9.如权利要求8所述的系统，其中将所述第一入口及所述第二入口与气室流体耦合，所述气室围绕所述腔室径向分布且经配置以在遍及所述气室的多个位置处提供入口至所述腔室的所述混合区域。
10.如权利要求1所述的系统，其中所述淋喷头经配置以分配所述第一前驱物及所述第二前驱物穿过所述腔室。
11.如权利要求10所述的系统，其中所述淋喷头界定围绕所述淋喷头的外部部分安置的多个孔，且所述淋喷头不包括围绕于所述淋喷头的内部部分的孔，所述内部部分至少自所述淋喷头的中心点延伸至所述淋喷头的约25％的径向长度。
12.如权利要求1所述的系统，其中所述第一远程等离子体单元包含第一材料，而所述第二远程等离子体系统包含第二材料。
13.如权利要求12所述的系统，其中基于所述第一前驱物的成分选择所述第一材料，并且其中基于所述第二前驱物的成分选择所述第二材料。
14.如权利要求13所述的系统，其中所述第一材料及所述第二材料为不同的材料。
15.如权利要求1所述的系统，其中配置所述第一远程等离子体单元及所述第二远程等离子体单元以在约10W至高于或约10kW之间的功率水平下操作。
16.如权利要求15所述的系统，其中配置所述第一远程等离子体单元以在基于所述第一前驱物的成分所选择的第一功率水平下操作，并且其中配置所述第二远程等离子体单元以在基于所述第二前驱物的成分所选择的第二功率水平下操作。
17.如权利要求16所述的系统，其中配置所述系统以在彼此不同的功率水平下操作所述第一远程等离子体单元及所述第二远程等离子体单元。
18.一种操作半导体处理系统的方法，所述方法包含以下步骤：
使第一前驱物穿过第一远程等离子体单元流入半导体处理腔室中；以及
使第二前驱物穿过第二远程等离子体单元流入所述处理腔室中，其中在所述腔室的混合区域中组合所述第一前驱物及所述第二前驱物，所述混合区域流体定位于基板所在的所述腔室的处理区域的上游，其中：
淋喷头被安置于所述腔室内且至少部分界定所述混合区域；
面板被安置于所述腔室内在所述腔室的所述淋喷头与基板处理区域之间；
离子抑制器被安置于所述腔室内在所述面板和所述腔室的所述基板处理区域之间，其中所述面板被电耦合到RF源，其中所述离子抑制器电接地，且其中所述腔室被配置成在作为电容耦合等离子体的电极操作的所述面板和所述离子抑制器之间产生所述电容耦合等离子体；以及
环形介电插入件被安置于所述面板和所述离子抑制器之间并接触所述面板和所述离子抑制器，其中所述环形介电插入件将所述面板和所述离子抑制器彼此电绝缘。
19.如权利要求18所述的方法，其中所述第一前驱物包含含氟前驱物，而所述第二前驱物包含含氧前驱物。
20.如权利要求18所述的方法，其中在所述第一远程等离子体单元中以第一等离子体功率激励所述第一前驱物，且在所述第二远程等离子体单元中以不同于所述第一等离子体功率的第二等离子体功率激励所述第二前驱物。
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