TWI772297B - 用於改良式半導體蝕刻及部件保護之系統與方法 - Google Patents

用於改良式半導體蝕刻及部件保護之系統與方法 Download PDF

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TWI772297B
TWI772297B TW106115258A TW106115258A TWI772297B TW I772297 B TWI772297 B TW I772297B TW 106115258 A TW106115258 A TW 106115258A TW 106115258 A TW106115258 A TW 106115258A TW I772297 B TWI772297 B TW I772297B
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天發 陳
樂琪 羅
迪米奇 路柏曼斯基
鄭順旭
馬汀岳 蔡
壽南 朴
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美商應用材料股份有限公司
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Abstract

半導體系統及方法可包括具有氣箱之半導體處理腔室，此氣箱界定至此半導體處理腔室之入口。此腔室可包括間隔物，該間隔物特徵為與氣箱耦接之第一表面，及此間隔物可界定在第一表面之內部部分上之凹進壁架。此腔室可包括在凹進壁架上安裝之支架，該凹進壁架沿間隔物之第二表面延伸。腔室亦可包括在支架上安裝之氣體分配板。

Description

用於改良式半導體蝕刻及部件保護之系統與方法
本發明技術係關於用於蝕刻半導體材料之系統及方法。更特定言之，本發明技術係關於用於使用腔室部件之改良式退化特性蝕刻之腔室及方法。
積體電路可能藉由製程而製造，此等製程複雜地在基板表面上產生圖案化之材料層。在基板上產生圖案化之材料需要用於去除暴露材料之受控制方法。化學蝕刻用於各種目的，包括：將光阻劑中之圖案轉移進下層、薄化層，或薄化已存在於表面上之特徵的橫向尺寸。通常，需要具有蝕刻一種材料快於另一材料以促進例如圖案轉移製程之蝕刻製程。稱這種蝕刻製程對第一材料有選擇性。由於材料、管路及製程之多樣性，蝕刻製程已經發展成對於各種材料具有選擇性。
蝕刻製程基於在製程中使用之材料可稱為濕式或乾式。濕式氫氟酸(HF)蝕刻優先於介電質及材料去除氧化矽。然而，濕式製程可能難以穿透一些受限溝槽且亦可能有時使剩餘材料變形。在形成於基板處理區域內之局部電漿中產生之乾式蝕刻可穿透更受限之溝道及展現精巧剩餘結構的更少變形。然而，局部電漿可當放電時經 由電弧之產生而損害基板。另外，電漿排出物可損害腔室部件，可能需要對其替換或處理。
因此，需要可用以產生高品質裝置及結構之改良式系統及方法。此等及其他需求藉由本技術來解決。
半導體系統及方法可包括具有氣箱之半導體處理腔室，此氣箱界定至半導體處理腔室之入口。腔室可包括間隔物，該間隔物特徵為與氣箱耦接之第一表面，及此間隔物可界定在第一表面之內部部分上之凹進壁架。腔室可包括在凹進壁架上安裝之支架，該凹進壁架沿間隔物之第二表面延伸。腔室亦可包括在支架上安裝之氣體分配板。
示範性腔室亦可包括接觸氣體分配板並在支架之表面周圍延伸之環形襯墊。腔室可包括安裝在環形襯墊上及靠近氣箱之表面定位的頂板。在實施例中，氣體分配板、環形襯墊及頂板可為或包括石英、陶瓷或經塗覆鋁。支架及間隔物可至少部分地包含硬陽極化鋁或經塗覆鋁。腔室亦可包括經配置以支撐半導體基板之台座，及此台座可包括陶瓷加熱器，此陶瓷加熱器經配置以將半導體基板加熱至約300℃與500℃之間。
在實施例中，送料管可在氣箱入口處將半導體處理腔室與遠端電漿源耦接在一起，及此送料管可包括石英內表面。石英內表面可包括設置在鋁送料管內之石英襯墊。送料管亦可包括將送料管與遠端電漿源單元耦接在一起之配接器，及此配接器可包括靠近送料管之薄墊片。
本技術亦可包括半導體處理系統，此半導體處理系統可包括遠端電漿源以及與遠端電漿源耦接之送料管。系統可包括可具有氣箱之半導體處理腔室，此氣箱界定至半導體腔室之入口。在實施例中，入口可位於氣箱內之中心位置，及送料管可在入口處與氣箱耦接。腔室亦可包括間隔物，該間隔物之特徵為與氣箱耦接之第一表面，及此間隔物亦可界定在第一表面之內部部分上之凹進壁架。腔室可包括安裝在凹進壁架上並沿間隔物之第二表面延伸之支架。氣箱之一部分可至少部分地平行於間隔物之第二表面延伸，及支架可至少部分地定位在間隔物之第二表面與至少部分地平行於間隔物之第二表面延伸的氣箱之該部分之間。腔室亦可包括在支架上安裝之氣體分配板。
系統亦可包括在腔室內接觸氣體分配板並在支架之內表面周圍延伸之環形襯墊。腔室可包括安裝在環形襯墊上及靠近氣箱之表面定位的頂板。氣箱之部分可包括氣箱之凹進部分的表面，及此氣箱之凹進部分可靠近支架之部分定位，此支架沿間隔物之第二表面延伸。在實施例中，氣體分配板、環形襯墊及頂板可為或包括石英、陶瓷或經塗覆鋁。
在實施例中，頂板可在入口之外徑內延伸，此入口藉由氣箱界定，及可接觸送料管或定位在送料管之出口處的配接器。支架及間隔物可至少部分地為或包括硬陽極化鋁或經塗覆鋁。腔室亦可包括經配置以支撐半導體基板之台座，及此台座可包括或為陶瓷加熱器，此陶瓷加熱器經配置以將半導體基板加熱至約300℃與500℃之間。在實施例中，送料管可為或包括石英內表面。另外，氣體分配板可包括孔之一或多個環，這些孔自氣體分配板之中心軸徑向向外地延伸。
本技術亦可包括在半導體處理腔室中蝕刻基板之方法。方法可包括將含氯前驅物傳遞至遠端電漿源同時生成電漿以產生電漿排出物。方法可包括將電漿排出物經由石英氣體分配板流入半導體處理腔室中。方法亦可包括在約300℃與約500℃之間的溫度下蝕刻基板。
本技術亦可包括具有遠端電漿源之半導體處理系統。系統可包括與遠端電漿源耦接之送料管。系統亦可包括半導體處理腔室，及半導體處理腔室可能包括耦接在送料管之遠端區域周圍的氣箱。腔室可包括在第一環形支撐件之第一表面處接觸氣箱之第一環形支撐件，及此第一環形支撐件及氣箱可一起界定在半導體處理腔室之內部區域周圍的第一通道。腔室亦可包括安裝在第一通道內之氣體分配板。
處理腔室亦可包括安裝在氣體分配板上之環形襯墊。腔室可包括安裝在環形襯墊上之頂板，及環形襯墊及頂板兩者可至少部分地安裝在第一通道內。腔室可包括在第一環形支撐件之第二表面處接觸第一環形支撐件的第二環形支撐件，此第一環形支撐件之第二表面在第一環形支撐件之第一表面的對面。第二環形支撐件及第一環形支撐件可一起界定在半導體處理腔室之內部區域周圍的第二通道。腔室亦可包括安裝在第二通道內之第二氣體分配板。在實施例中，第一氣體分配板及第二氣體分配板可每個為石英、陶瓷或經塗覆鋁之一者或包括石英、陶瓷或經塗覆鋁。
處理腔室亦可包括可拆卸地將氣體分配板與第一環形支撐件耦接的至少一個銷。送料管可界定在遠端電漿單元與氣箱之間的通道的至少一部分，此氣箱經配置以允許前驅物經由送料管傳遞進半導體處理腔室中，此半導體處理腔室繞過遠端電漿源。腔室亦可包括定位在送料管內之插入件，及此插入件可提供自遠端電漿源及送料管之通道的至少一部分至插入件之混合區域的入口。在實施例中，插入件之混合區可包括第一混合段，此第一混合段之特徵為自入口至插入件之混合區逐漸變細的形狀，及插入件之混合區可包括第二混合段，此第二混合段之特徵為自靠近第一混合段的位置至送料管之出口的擴展內徑。
在實施例中，插入件之混合區進一步可包括第三混合段，此第三混合段之特徵為內徑小於送料管之內徑一半的圓柱形狀。另外，氣箱可包括彼此耦接之第一氣箱板及第二氣箱板。第二氣箱板可沿第二氣箱板之第二表面至少部分地接觸第一環形支撐件，此第二氣箱板之第二表面在第二氣箱板之第一表面對面，此第二氣箱板之第一表面接觸第一氣箱板。又，第二氣箱板可界定複數個通道，及耦接之第一氣箱板與第二氣箱板可界定穿過複數個通道之流動路徑。在實施例中，第一氣箱板可界定埠，此埠提供至複數個通道之一通道的入口。第二氣箱板可界定至少一個進入通道，此至少一個進入通道提供自複數個通道至半導體處理腔室之內部區域的入口，及此至少一個進入通道可自藉由第一氣箱板界定之埠徑向向外地定位。
本技術亦可包括具有氣箱之半導體處理腔室，此氣箱提供至半導體處理腔室的入口。腔室可包括在第一環形支撐件之第一表面處接觸氣箱之第一環形支撐件，及此第一環形支撐件及氣箱可每個界定位於氣箱與第一環形支撐件之介面處的第一通道的一部分。腔室可包括安裝在第一通道內之第一氣體分配板。另外，腔室可包括在第一環形支撐件之第二表面處接觸第一環形支撐件的第二環形支撐件，此第一環形支撐件之第二表面在第一環形支撐件之第一表面的對面。第二環形支撐件可至少部分地界定位於半導體處理腔室之內部區域周圍的第二通道。腔室亦可包括安裝在第二通道內之第二氣體分配板，及在實施例中第一氣體分配板及第二氣體分配板可為或可包括石英。
處理腔室亦可包括安裝在第一氣體分配板上之環形襯墊。腔室可包括安裝在環形襯墊上之頂板，及環形襯墊及頂板兩者可至少部分地安裝在第一通道內。在實施例中，第一氣體分配板及第二氣體分配板之特徵可為類似形狀及可每個界定複數個孔，此等複數個孔位於氣體分配板周圍的環中。另外，氣箱可包括彼此耦接之第一氣箱板及第二氣箱板。第二氣箱板可沿第二氣箱板之第二表面至少部分地接觸第一環形支撐件，此第二氣箱板之第二表面在第二氣箱板之第一表面對面，此第二氣箱板之第一表面接觸第一氣箱板。第二氣箱板可界定複數個通道，及耦接之第一氣箱板與第二氣箱板可界定穿過複數個通道之流動路徑。在實施例中，第一氣箱板可界定埠，此埠提供至複數個通道之一通道的入口。另外，第二氣箱板可界定至少一個進入通道，此至少一個進入通道提供自複數個通道至半導體處理腔室之內部區域的入口。在實施例中，至少一個進入通道可自藉由第一氣箱板界定之埠徑向向外地定位。
這種技術可提供超過習知技術之眾多益處。例如，此技術可允許受電漿前驅物影響之腔室部件的改良保護。另外，本發明技術可允許基於腔室設計之改良部件替換及出入。結合下文之描述及附圖更詳細地描述了此等及其他實施例連同其許多優勢及特徵。
在半導體處理中，可由於許多原因執行蝕刻。在乾式蝕刻中，前驅物可流動穿過電漿以產生用於蝕刻各種半導體材料之自由基電漿排出物。此等前驅物可包括一或多種腐蝕元素，此等一或多種腐蝕元素包括氟、氯或任一其他化學元素。這些元素不但暴露於要蝕刻之基板或材料，而且暴露於其中執行處理之腔室部件。因此，腔室之暴露表面可藉由電漿或電漿產生之排出物蝕刻、濺射或另外劣化。劣化之程度可與在用於蝕刻之腔室部件與前驅物之間的反應性有關。
習知技術通常藉由在腔室內提供可替換部件來處理此劣化。因此，當劣化塗層或部件本身時，此部件可被去除或使用將來亦會隨時間推移劣化之新部件來替換。不但此劣化及替換耗費處理時間及金錢，而且此劣化本身可影響正在執行之製程。例如，當部件或塗層正在劣化時，來自受影響之部件及塗層的顆粒可沉積在所正加工之基板上。這可引起包括部件之短路以及不均勻處理的生產問題。
許多半導體腔室部件可由鋁製成。當基於氯前驅物在處理中使用時，氯以及氯自由基為腐蝕性的及可很快地損害暴露之鋁腔室部件。用於減少腐蝕之一個機制為塗覆暴露之鋁塊。然而，塗覆任一暴露材料可為昂貴的、不良的，並可當材料隨著時間推移劣化時而引入污垢。因此，塗覆越多材料，具有塗覆問題之機率越高。
本發明技術使用腔室內之替代部件以減少蝕刻劑對腔室之影響。藉由在實施例中去除自腔室生成之電漿，亦可減少對腔室部件之轟擊損傷。儘管本揭示案通常使用本揭示技術識別特定蝕刻製程，但不難理解，該等系統及方法同樣地適用於沉積及清洗製程（當其在描述之腔室中存在時）。因而，本技術應不認為受限於單獨用於蝕刻製程。
第 1 圖 圖示根據揭示之實施例之沉積、蝕刻、烘烤及固化腔室的處理系統100的一個實施例之俯視平面圖。在圖中，一對前開式晶圓盒(front opening unified pod; FOUP)102供應各種尺寸之基板，此各種尺寸之基板由機器臂104來接收並置於低氣壓固持區106中，隨後置於基板處理腔室108a-f之一者中，該等基板處理腔室定位在串聯區域109a-c中。第二機器臂110可用以將基板晶圓自固持區106傳送至基板處理腔室108a-f及返回。每個基板處理腔室108a-f可經配備以執行多個基板處理操作，此多個基板處理操作包括本文描述之蝕刻製程，還包括循環層沉積(cyclical layer deposition; CLD)、原子層沉積(atomic layer deposition; ALD)、化學氣相沉積(chemical vapor deposition; CVD)、物理氣相沉積(physical vapor deposition; PVD)、蝕刻、預清洗、脫氣、定向及其他基板製程。
基板處理腔室108a-f可包括在基板晶圓上沉積、退火、固化及/或蝕刻介電質膜之一或多個系統部件。在一個配置中，兩對處理腔室，例如108c-d及108e-f，可用以在基板上沉積介電材料，及第三對處理腔室，例如108a-b，可用以蝕刻沉積介電質。在另一配置中，全部三對腔室，例如108a-f，可經配置以蝕刻基板上之材料。下文描述之製程之任意一或多個可在腔室中進行，此腔室與在不同實施例中圖示之製造系統分隔。應理解，系統100可設想用於介電質膜之沉積、蝕刻、退火及固化腔室的額外配置。下文描述之腔室之任一者可用在處理系統100中，及可作為串聯腔室被包含，其可包括共享前驅物、環境或控制特徵之兩個類似腔室。
第 2 圖 圖示根據本技術之實施例之示範性處理系統200的示意橫截面圖。系統可包括處理腔室205及遠端電漿源(remote plasma source; 「RPS」)單元210。RPS單元210可穩定在具有支撐構件214之平台212上，支撐構件214可在處理腔室205周圍之一或多個位置處與處理腔室205耦接。藉由利用額外支撐構件214連同平台212，RPS單元210之重量可適當地經分配以保護部件免受干擾或與RPS單元210之重量相關的其他應力。送料管216可與RPS單元210耦接或耦接在RPS單元210與處理腔室205之間以用於將一或多種前驅物轉移至處理腔室205。凸緣配接器218可定位在送料管216周圍以提供對RPS單元210之額外穩定性及支撐，其可另外因支撐重量損害送料管216。凸緣配接器218可接觸平台212以提供對RPS單元210之支撐，另外以便RPS單元210之重量未承載在送料管216上。
處理腔室205可包括提供至處理腔室205之入口的氣箱220。氣箱220可界定至處理腔室205之入口，及在實施例中，入口可被界定或位於之氣箱220內之中心位置。送料管216可定位或耦接在氣箱220之入口內，此氣箱220提供在RPS單元210與處理腔室205之內部之間的前驅物路徑。凸緣配接器218亦可接觸頂板220以分配RPS單元210之至少一部分的重量，以阻止或減小送料管216上之應力。
在實施例中，間隔物222可至少部分地界定處理腔室205之外壁及內壁。氣體分配組件225可定位在靠近送料管216之處理腔室205內，及氣體分配組件225可允許前驅物或電漿排出物分配進處理腔室205中。泵送襯墊230可定位在處理腔室205之處理區域內。泵送襯墊230可允許未反應的前驅物或電漿排出物自處理腔室205排出。泵送襯墊230可另外允許在蝕刻製程中蝕刻之顆粒自處理腔室205去除以在後續處理操作期間阻止顆粒保留在基板上。
台座235可被包含入處理腔室205之處理區域中及可經配置以在蝕刻或其他製程操作期間支撐基板。例如，台座235可在包括靜電、真空或重力之各種實施例中具有一或多個卡緊機構。台座235在實施例中可旋轉或可平移，及可向氣體分配組件225升高或自氣體分配組件225降低。在實施例中，台座235可包括一或多個升降桿以用於協助將基板轉移進及轉移出處理腔室205。台座235可另外包括用於在處理操作期間維持基板溫度的加熱或冷卻機構。
台座235可包括嵌入加熱元件，此嵌入加熱元件包括燈絲，或可包括經配置以傳遞溫度受控流體之一或多個管或通道，此溫度控制流體因此可升高或降低溫度。台座235可包括用於支撐基板之平台，此基板為或包括陶瓷加熱器。在實施例中，陶瓷加熱器可加熱基板至包括自約20℃至超過1000℃之特定工作溫度。在實施例中陶瓷加熱器可另外將基板加熱至約50℃以上、約100℃以上、約150℃以上、約200℃以上、約250℃以上、約300℃以上、約350℃以上、約400℃以上、約500℃以上或更高。在實施例中陶瓷加熱器可另外維持基板溫度在約1000℃以下、在約900℃以下、在約800℃以下、在約700℃以下、在約600℃以下、或在約500℃以下。陶瓷加熱器可另外經配置以在實施例中加熱或維持基板溫度在約100℃與約500℃之間，或在實施例中在約300℃與約500℃之間。在實施例中加熱器經配置以維持基板溫度在約300℃以下，在此情況下替代金屬加熱元件可代替陶瓷加熱器使用。例如，可使用經塗覆鋁加熱器，或在鋁或處理之鋁台座上之嵌入或經塗覆加熱器。
處理腔室205之部件可經配置以在蝕刻或其他處理操作期間耐受操作環境。處理腔室205之部件可為陽極化或氧化材料，例如包括硬陽極化鋁。在處理腔室205內之可與電漿排出物或其他腐蝕性材料接觸之每個部件可經處理或塗覆以防止腐蝕。在實施例中，亦可利用替代材料以阻止包括氟或氯之電漿排出物的腐蝕。例如，處理腔室205內之一或多個部件在實施例中可為陶瓷或石英。作為特定實例，氣體分配組件225、間隔物222、泵送襯墊230、或可與電漿或非電漿前驅物接觸之任一部件的一或多個部件，可為或可包括石英或陶瓷。另外，送料管216可為或可包括石英，諸如包括送料管216內之石英襯墊。送料管在實施例中可為鋁或硬陽極化鋁，及可特徵為石英內表面。RPS單元210亦可內襯石英以防止內部部件腐蝕，此腐蝕例如由在包括氟或氯之RPS單元210內解離之前驅物而引起。RPS單元210可包括陽極化金屬，及RPS單元210腔室空腔可內襯石英以進一步防止腐蝕。
藉由利用來自RPS單元210之遠端電漿，處理腔室205可進一步防止由電漿生成而引起之內部腐蝕。在實施例中，處理腔室205可不經配置以產生電漿，及可在RPS單元210中之處理腔室205外部執行電漿生成。在實施例中，可在處理腔室205內執行額外電漿處理，諸如藉由電容耦接電漿，儘管可使用其他電漿源。例如，氣箱220及氣體分配組件225之一或多個部件可用作電極，藉由其可產生電容耦接電漿。可使用腔室內之額外或替代電漿部件以藉由減小路徑長度來幫助來自電漿生成之電漿排出物的重新組合以與基板互相作用。
藉由電漿解離之前驅物在某一停留時間之後將重新組合。例如，在基於氯之前驅物在RPS單元210內解離之後，前驅物或電漿排出物可經由送料管216流進處理腔室205中，隨後與台座235上之基板相互作用。取決於用於自由基排出物之行進路徑的長度，排出物或自由基可重新組合並至少部分地損失自由基前驅物之反應性。另外，行進路徑越複雜，諸如穿過各管或通道，更多保護可被包含入系統中，因為與電漿排出物接觸之每個部件可經處理或塗覆以防腐蝕。因此，處理腔室205可包括自RPS單元210行進進處理腔室205中，隨後穿過泵送襯墊230之相對直線。另外，一旦在處理腔室205內，前驅物或電漿排出物可行進穿過氣體分配組件225之一或多個流線態樣以接觸基板。氣體分配組件225之部件可用以改進朝向基板之流量均勻性，但另外維持前驅物流動路徑之減小的長度，以減少電漿排出物之重新組合以及在處理腔室205內之停留時間。
參看第3圖，第3圖圖示根據本技術之實施例之示範性處理腔室205的一部分的示意橫截面圖。第3圖包括第2圖之氣體分配組件225的部件之局部視圖，及可包括如上所述之類似部件。例如，如第3圖中圖示之處理腔室205可包括送料管216、凸緣配接器218、氣箱220及間隔物222。如額外細節圖示，間隔物222之特徵可為與氣箱220耦接之第一表面321。間隔物222可在實施例中界定在第一表面321之內部部分上的凹進壁架323。內部部分可為相對於部件或相對於腔室徑向朝處理腔室205之中心軸定位的部分，例如，或可為面向處理腔室205之內部的部分。如在圖中圖示，凹進壁架323可形成於間隔物222之第一表面321的朝向處理腔室205之內部之側面上，及可位於氣箱220之耦接位置附近。氣箱220可在實施例中至少部分地覆蓋凹進壁架323，及可完全地覆蓋凹進壁架323。
支架305可安裝在間隔物222之凹進壁架323上。支架305可沿間隔物222之第二表面324延伸。間隔物222之第二表面324可面向處理腔室205之內部，及在實施例中為鄰近於第一表面321的間隔物222之表面。支架305可沿間隔物222之第二表面324在與凹進壁架323成約或基本上直角處延伸。支架305之特徵可為取決於方向之S或Z形以提供支撐架307，此支撐架307自支架305延伸進處理腔室205中。支架305可具有環形形狀並在處理腔室205之內部周圍延伸。墊圈或O型環309可定位在支架305附近，及可在處理腔室205配置中自支架305徑向向外。墊圈309可定位在氣箱220與間隔物222之間以提供在部件及支架305周圍的液封。當氣箱220與間隔物222耦接時，可壓縮墊圈或O型環309以在部件之間形成密封。
如進一步圖示，氣箱220之一部分亦可延伸超出與氣箱220耦接之間隔物222之第一表面321，及可能至少部分地平行於間隔物222之第二表面324，或支架305延伸。如圖所示，氣箱220之一部分跨間隔物222之第一表面321的平面，此間隔物222之第一表面321的平面在處理腔室205內平行於間隔物222之第二表面324延伸。氣箱220之此部分可為在處理腔室205內之氣箱220的凹進部分，及氣箱220之凹進部分可定位在沿間隔物222之第二表面324延伸的支架305的一部分附近。在實施例中氣箱220可能不完全平行延伸，及亦可以一定角度朝向或遠離間隔物222之第二表面324延伸。支架305可至少部分地定位在間隔物222之第二表面324與氣箱220之一部分之間，此氣箱220之該部分至少部分地平行於間隔物222之第二表面324延伸。支架305可在實施例中在間隔物222與氣箱220之間分隔，或可直接接觸間隔物220之第二表面324，或氣箱220之至少部分地平行於間隔物220之第二表面324延伸之部分的一或兩個。
氣體分配板310可安裝在支架305上，此氣體分配板310經配置以將均勻流動之前驅物或電漿排出物提供進處理腔室205之處理區域中以用於與基板相互作用。在實施例中，氣體分配板310可安裝在支架305上而無附加耦接材料，及可直接安裝在支撐架307上。環形襯墊312可安裝或定位在氣體分配板310上及可在處理腔室205之內部周圍延伸以覆蓋原本暴露區域或支架305之內表面。
頂板314可定位或安裝在環形襯墊312上，及靠近面向處理腔室205之內部的氣箱之表面定位。頂板314可在自送料管216之出口周圍延伸及可直接接觸自送料管216之出口，以減少或阻止前驅物或電漿排出物接觸面向腔室之內部的氣箱220之表面。另外，頂板314可穿過或在由氣箱220界定之入口之外徑內延伸，及可或不可直接接觸送料管216或定位在送料管216之出口處的配接器。在實施例中縫隙可存在於頂板314與氣箱220之間，或頂板314可齊平並直接接觸氣箱220。在實施例中，縫隙可少於5 cm，及可等於或少於約4 cm、3 cm、2 cm、1 cm、0.5 cm、0.1 cm或0 cm，在此情況下頂板314直接接觸氣箱220。頂板314可為在送料管216接觸或遇到頂板314之位置處界定孔的平板。頂板314可另外為固體設計以防止氣箱220暴露於前驅物或電漿排出物。
氣體分配板310、環形襯墊312及頂板314之一或多個可組成第2圖之氣體分配組件225。此等部件之每個可經塗覆或設計成惰性的或具有來自電漿排出物及前驅物的減少的影響。例如，氣體分配板310、環形襯墊312及頂板314可每個在實施例中由石英製成或包括石英，或可由不起反應的或具有對包括氟或氯之腐蝕性材料減小的反應性的材料製成或塗覆。例如，氣體分配板310、環形襯墊312或頂板314之任一者可為陶瓷，或可經塗覆或陽極化鋁。儘管氣體分配板310可均勻地將前驅物或電漿排出物自送料管216分散進處理腔室205之處理區域中，環形襯墊312及頂板314可用以保護處理腔室內之額外部件。例如，當前驅物或電漿排出物自送料管216分配時，前驅物可在氣體分配組件225內徑向向外地流動及至少部分地充填氣體分配組件225之空腔，該空腔界定在氣體分配板310、環形襯墊312與頂板314之間。環形襯墊312及頂板314可在反應前驅物或電漿排出物經由氣體分配板310分配或流動之前，阻止反應前驅物或電漿排出物接觸氣箱220及支架305。
一旦前驅物經由氣體分配板310分配，則流動可至少部分地接觸支架305或間隔物222。可基於穿過腔室之增壓流或真空流最小化這種接觸。因此，在送料管216與氣體分配板310之間之處理腔室205的區域可為一位置，其中在前驅物之腔室內的停留時間長於在前驅物流過氣體分配板310之後的停留時間。藉由覆蓋處理腔室205之原本暴露部分，此原本暴露部分包括面向分別具有環形襯墊312及頂板314之支架305及氣箱220的表面之內部。可改進腔室部件使用壽命，其可減少在處理腔室205之使用壽命期間的替換成本。間隔物222及支架305之至少部分可為鋁及可在前驅物或電漿排出物經由氣體分配板310分配或流動之後藉由前驅物或電漿排出物而接觸。間隔物222及支架305，或此等部件之至少暴露表面，因而可經塗覆或可由諸如硬陽極化鋁之材料組成以減少它們的劣化。另外此等材料亦可由石英、陶瓷或其他非反應或反應性較低材料組成或包括石英、陶瓷或其他非反應或反應性較低材料。
第 4 圖 圖示了根據本技術之實施例之示範性處理腔室的傳遞系統400的示意橫截面圖。第4圖可包括如先前在第2圖及第3圖中圖示之部件，及可包括例如RPS單元210、平台212、送料管216、凸緣配接器218、氣箱220及頂板314。如圖圖示，送料管216可在藉由氣箱220界定之入口處將處理腔室205與RPS單元210耦接。由於暴露於可為腐蝕性之電漿排出物，送料管216可由諸如硬陽極化鋁或經塗覆鋁之塗覆或保護材料組成或包括諸如硬陽極化鋁或經塗覆鋁之塗覆或保護材料。在實施例中，送料管216亦可包括沿送料管216之內部之諸如石英襯墊的襯墊，此送料管216之內部可能暴露於電漿排出物。
一或多個墊圈或O型環405a-c可被包括在部件之間，該等部件諸如RPS單元210及平台212、平台212及凸緣配接器218，以及凸緣配接器218及氣箱220。在實施例中可包括配接器410以將送料管216與RPS單元210耦接。配接器410可至少部分地為石英，及可包括凸緣或薄墊片。配接器410之凸緣或薄墊片可允許在RPS單元210與送料管216之間之改良密封，以防止包括O型環或墊圈405a之部件由電漿排出物接觸，其可腐蝕O型環或墊圈405a、RPS單元210或平台212。凸緣或薄墊片在實施例中可為箔O型環或在部件之間提供密封之另一材料，及其亦可對前驅物或電漿排出物之腐蝕是惰性的或防止該腐蝕，諸如用塗層、保護層或材料選擇來防腐蝕。送料管216亦可包括與送料管216之出口耦接之配接器415。在實施例中，配接器415可與氣箱220或頂板314耦接。在實施例中，配接器415可為頂板314之適配，頂板314可經變形、逐漸變細、凸緣連接或另外經調節以減少或防止氣箱220暴露於前驅物或電漿排出物，此前驅物或電漿排出物經由送料管216傳遞。
第 5A 圖至第 5B 圖 圖示根據本技術之實施例之氣體分配板310的示範性結構。如在第5A圖中圖示，氣體分配板310a可包括自氣體分配板310a之中心軸徑向向外地延伸的孔的一或多個環。環可包括任意數目之孔，其可經組合或分隔以調整穿過氣體分配板310a之流量。如圖所示，氣體分配板310a包括孔之四個環，其中每個徑向向外的環包括特徵為大於更多內部環之直徑的孔。在實施例中，可對環數目以及孔之尺寸及形狀兩者進行調整。例如，氣體分配板可具有2個、3個、4個、5個、6個、7個、8個、9個、10個，或更多個自氣體分配板310a之中心軸徑向向外地延伸的環。另外，可調整每個環包含之孔的數目以及在環內之每個孔之間的間隔。例如，每個環可具有少於或約3個、4個、5個、6個、8個、10個、15個、20個、25個、30個、35個、40個、45個、50個、60個、70個、80個、90個或每環更多個孔。另外，每個孔之間之間隔可類似於或不同於環內以及環之間之一個孔至下一個的間隔。這種調整可用以優化穿過氣體分配板310a之流量。
第5B圖圖示具有同樣大小孔之複數個環的氣體分配板310b。如圖所示，一或多個環可旋轉或偏離附近環。這種設計可提供穿過氣體分配板310b之更均勻的流量。孔可遍及氣體分配板或者在特定環內或跨環之類似或不同尺寸。另外，孔之間的間隔在環內或環之間可為均勻的或不同的。例如，示範性氣體分配板310b可包括複數個環，此等複數個環具有在約0.1 mm與約10 mm之間的均勻孔尺寸。孔尺寸可在約1 mm與約5 mm之間，或在實施例中在約2 mm與約4 mm之間。另外，每個環可具有約3個與約100個之間的孔或更多個。例如，朝向氣體分配板310b之內部的環可包括較少孔，而自氣體分配板310b之中心徑向向外的環可包括更多孔。因此，環內之任一較小範圍的孔具體地包含在較大範圍內。應理解，第5A圖及第5B圖僅為氣體分配板210設計及配置之實例，及本技術中另外包含對孔位置、大小及形狀之任一數量的修改。
參看第 6 圖 ，第 6 圖 圖示根據本技術之實施例之示範性處理系統600的一部分的示意橫截面圖。處理系統600可包括某些類似於在例如第2圖中圖示之系統的部件。處理系統600可包括定位在具有支撐構件614之平台612上之遠端電漿源(remote plasma source; 「RPS」)單元610。RPS單元610、平台612及支撐構件614可類似於上述之彼等。處理系統600可進一步包括藉由額外凸緣配接器618支撐之送料管616，及送料管616可與RPS單元610耦接。儘管送料管616及凸緣配接器618可具有類似於上述彼等之特性，但尺寸可基於與處理腔室605之差異而不同於第2圖之彼等。例如，送料管616及凸緣配接器618兩者可具有小於第2圖中圖示之處理系統的彼等的長度尺寸。這些差異及它們的優勢將在下文詳細地說明。
如在第2圖及第3圖中圖示，處理腔室205可包括具有支架205之鉸鏈設計，支架205在處理腔室205內下降及定位在間隔物222上。氣箱220可隨後定位在部件之頂部上並與間隔物222耦接。此設計可能在處理腔室205之生產期間對去除用於替換之支架205以及支架205之插入造成困難。可能支架205在初次定位或替換期間可刮傷間隔物222。如若間隔物222具有塗層或陽極化整飾面，則表面缺陷或刮痕如若由前驅物或電漿排出物接觸，則可提供用於腐蝕或較早腐蝕之位置。因此，處理腔室605另外包括易於生產及替換之特徵。
處理腔室605包括界定送料管616之至半導體處理腔室605的入口的氣箱620。氣箱620可在送料管616之遠端區域周圍耦接，或送料管616可在實施例中穿過氣箱620。氣箱620可包括與凸緣配接器618耦接之平面的或大體上平面的表面。處理腔室605亦可包括沿一表面接觸氣箱620之第一環形支撐件622，此表面與氣箱620平面的或大體上平面的表面相對。第一環形支撐件622可在環形支撐件之第一表面處接觸氣箱620。第一環形支撐件622及氣箱620一起可界定在處理腔室之內部區域周圍的第一通道623的至少一部分。第一通道623可位於氣箱與第一環形支撐件之介面處。第一環形支撐件622可在第一環形支撐件之內徑處界定凹進壁架。氣箱620可在與氣箱620之平面的或大體上平面的表面相對的表面內界定凹進壁架。藉由氣箱620界定之凹進壁架可經界定以與第一環形支撐件622之凹進壁架的位置重合以界定第一通道623。氣體分配組件625可定位在或安裝在第一通道內。
氣體分配組件625可包括如先前所述之氣體分配板、環形襯墊及頂板，或可包括較少之部件。例如，氣體分配組件625可為安裝在第一通道623內之氣體分配板。在實施例中，環形襯墊可安裝在氣體分配板上，及頂板可安裝在環形襯墊上，及環形襯墊及頂板兩者可至少部分地安裝在第一通道623內。氣體分配組件625之部件可經定位以防止第一通道623、氣箱620及第一環形支撐件622之表面暴露於經由送料管616傳遞之前驅物或電漿排出物。第一通道623可具有等效於氣體分配組件625之尺寸，所以氣體分配組件在第一通道623內齊平。在其他實施例中，第一通道可沿氣體分配組件之外徑，以及如先前所述在頂板與氣箱620之間具有一或多個縫隙。
在一些實施例中，可包含第二環形支撐件624及第二環形支撐件624可在第一環形支撐件622之第二表面處接觸第一環形支撐件622，此第一環形支撐件622之第二表面與第一環形支撐件622之第一表面相對。第二環形支撐件624可具有與第一環形支撐件622類似之形狀。在實施例中，第二環形支撐件624可具有大於或小於第一環形支撐件622之厚度。第二環形支撐件624亦可在類似於第一環形支撐件622之第二環形支撐件的內徑處界定凹進壁架。第二環形支撐件624之凹進壁架連同第一環形支撐件622之第二表面，可每個至少部分地在半導體處理腔室之內部區域周圍界定第二通道626。儘管未圖示，但是第一環形支撐件622亦可在類似於氣箱620之第一環形支撐件之第二表面內界定凹進壁架。凹進壁架可增大第二通道626之高度以容納類似於氣體分配組件625之彼等的額外部件。
處理腔室605亦可包括安裝在第二通道626內之第二氣體分配板627。第二氣體分配板627及氣體分配組件625之氣體分配板可為類似或不同的設計，及可兩者皆由石英或如先前所述之材料組成或包括石英或如先前所述之材料。氣體分配板可具有彼此類似之孔配置，或者不同於彼此之配置，及任一者或兩者氣體分配板可包括類似於關於第5A圖至第5B圖論述之彼等的配置。舉例而言，氣體分配組件625之第一氣體分配板及第二氣體分配板627之特徵可為類似形狀，及可每個界定複數個孔，此等複數個孔位於在單獨的氣體分配板周圍的環中。在實施例中，板可具有彼此對準之孔或可具有彼此偏移之孔以改進穿過板之流量的均勻性。儘管未圖示，但是應理解，處理腔室605亦可包括台座、加熱器及如關於第2圖描述之其他部件。
氣箱620、第一環形支撐件622及第二環形支撐件624可具有類似外徑及可經堆疊以至少部分地界定處理腔室605之外部尺寸，以及至少部分地界定處理腔室605之內部或處理區域的尺寸。部件可如圖示經堆疊以界定第一通道623及第二通道626。此堆疊設計以及氣箱620之平面表面可允許較短之支撐構件614、配接器凸緣618及送料管616。可降低這些部件之高度因為不同的氣箱620設計可不包括延伸進處理腔室605中的凹進部分。因而，送料管616可具有進入處理腔室605之內部的減小之長度。藉由減小送料管長度，傳遞至處理腔室605之前驅物或電漿排出物可具有至基板之較短流動路徑。藉由減少流動路徑之長度，可維持電漿前驅物之解離，及蝕刻製程可比當在具有來自電漿排出物生成的較長流動路徑之腔室中執行時，與要蝕刻之基板或材料接觸更加高效。
第 7 圖 圖示根據本技術之實施例之示範性氣體分配板725的橫截面平面圖。如上文論述，此圖圖示氣體分配板725至第一環形支撐件622之耦接，以及來自送料管616之透視圖。如圖所示，包括銷631以支撐及定位氣體分配板725以防止或減少板在第一通道623內之移動。不同於安裝在諸如第2圖中之支架上，藉由利用第一環形支撐構件622，可產生直接連接以確保氣體分配板725之適當位置或定向。處理腔室605可包括至少一個銷631，及可包括諸如銷631a、銷631b及銷631c之任意數目的銷，例如該等銷可拆卸地將氣體分配板725與第一環形支撐件622耦接在一起。
銷可在實施例中延伸穿過第一環形支撐件622以另外將第二氣體分配板627銷連接至第二環形支撐件624，或可在實施例中在第一環形支撐件622內停止。銷可僅僅在相對位置固持板，或可具體地將板固定在適當位置中，諸如使用耦接構件，諸如例如螺釘、螺桿等，其可阻止部件在沒有去除耦接構件之情況下抽出。在生產期間，氣體分配板725可在氣箱620與第一環形支撐件622耦接之前在銷上滑動。隨後可在處理期間阻止或大體上阻止氣體分配板725移動，移動可在其他情況下使得一或多個部件遭刮傷或使得塗層或保護層遭去除或損壞。
參看第 8 圖 ，第 8 圖 圖示根據本技術之實施例之示範性處理腔室800的部分的示意橫截面圖。處理腔室800可類似於第6圖之處理腔室605，其中對送料管816、配接器凸緣818及氣箱820具有調整。儘管未圖示處理系統之若干部件，但其他部件可如先前所述。如圖所示，配接器凸緣818可界定埠825及通道827之至少一部分以用於提供前驅物之入口，其經配置以繞過RPS單元及進入送料管816及處理腔室805。送料管816亦可在RPS單元與氣箱820之間界定通道827之至少部分以允許將前驅物轉移進半導體處理腔室805中。送料管816亦可界定一或多個孔828，一或多個孔828提供來自RPS單元之前驅物或電漿排出物的入口。在實施例中，孔828可在送料管周圍分隔以在圍繞通道827提供入口。
插入件829可定位在送料管816內，如圖中圖示。插入件829可提供自RPS單元及送料管816之通道827的至少一部分至插入件829之混合區830的入口。插入件829之混合區830之特徵可為多個混合段。第一混合段831之特徵可為自入口至插入件829之混合區830的逐漸變細的形狀。在實施例中，至混合區的入口可具有高達送料管816之內徑的直徑。插入件829之混合區830亦可包括第二混合段833，第二混合段833之特徵可為自靠近第一混合段831之位置至送料管816之出口的擴展內徑。
混合區830可進一步包括第三混合段835，第三混合段835之特徵可為具有小於送料管816之內徑的內徑的圓柱形形狀。例如，第三混合段835可具有一內徑，此內徑小於或約為送料管816之內徑的90%。在實施例中，第三混合段835之內徑亦可小於或約為送料管816之內徑的85%、80%、75%、65%、60%、55%、50%、45%、40%、35%、30%、25%、20%、15%、10%、或5%。在實施例中，第三混合段之內徑亦可大於或約為送料管816之內徑的5%、10%、15%、20%、25%、30%、35%、40%、45%、50%、55%、60%、65%、70%、75%、80%、85%、90%或95%。藉由包括混合段及插入件，經由通道827引入之前驅物在進入處理腔室805之前可更均勻地與前驅物或電漿排出物混合，此前驅物或電漿排出物經由RPS單元引入。
如在第8圖中圖示，氣箱820可由多個板製成以允許進一步進入繞過前驅物，此繞過前驅物可維持與自RPS單元引入之任意前驅物或電漿排出物分隔直到他們進入處理腔室805。在實施例中，氣箱820可包括彼此耦接之第一氣箱板840及第二氣箱板842。第二氣箱板842可沿第二氣箱板842之第二表面至少部分地接觸第一環形支撐件622。氣箱板842之第二表面可在與第一氣箱板840接觸之第二氣箱板842之第一表面對面。第二氣箱板842可在實施例中界定複合通道或複數個通道845。當第一氣箱板840與第二氣箱板耦接時，可經由複合通道或複數個通道845界定流動路徑。第一氣箱板840可另外界定埠847，埠847提供至複數個通道845之至少一個通道的入口。繞過前驅物可經由埠847引入及流入與電漿排出物分隔之處理腔室中。
第 9 圖 圖示根據本技術之實施例之示範性氣箱820佈置的橫截面平面圖。如上所述，氣箱820可包括耦接在一起之第一氣箱板840及第二氣箱板842。氣箱820之兩個板界定送料管816之入口。可視為複合通道之複數個通道845在第二氣箱板842內界定。在第一氣箱板840之埠847可提供至複數個通道845之入口及自可繞過RPS單元之前驅物的埠847的流動路徑。複數個通道845可提供用於更均勻地將前驅物分散進處理腔室805中之流動圖案，此前驅物經由埠847引入。可界定複數個通道845以產生自埠847遍及複數個通道845引入之繞過前驅物的遞迴流量。
第二氣箱板842可另外界定至少一個通道949，諸如進入通道，提供自複數個通道845至半導體處理腔室805之內部區域的入口。第二氣箱板842亦可界定複數個通道949以向處理區域提供更均勻流動之前驅物。在實施例中，藉由第二氣箱板842界定之通道949可定位在或位於自埠847徑向向外處，埠847藉由第一氣箱板840界定。這種配置可在前驅物經由第二氣箱板842中之通道949進入處理腔室805之前經由通道845提供前驅物之更均勻分配。
第 10 圖 圖示根據本技術之實施例之示範性氣箱820佈置的部分的橫截面圖。如先前所述，氣箱820可包括第一氣箱板840及第二氣箱板842。第二氣箱板842可界定複數個通道845，以及如先前所述提供至處理腔室805之入口的一或多個進入通道949。前驅物可繞過RPS單元並經由進入通道949進入處理腔室並接觸氣體分配組件，諸如先前論述之氣體分配組件625。氣體分配組件625可包括頂板1020，其可包括允許繞過前驅物進入氣體分配組件625並經分配至基板用於處理的一或多個孔1025。另外或替代地，頂板1020可能不包括孔1025，在此情況下進入處理腔室949之繞過前驅物可圍繞氣體分配組件625傳遞以進入處理腔室之處理區域。氣體分配組件625可能安裝在其上之第一環形支撐件可界定凹口，繞過前驅物可藉由此凹口穿過氣體分配組件625。隨後繞過前驅物可與任意前驅物或電漿排出物流體分隔，此任意前驅物或電漿排出物自RPS單元分配直到前驅物穿過氣體分配組件625之後。在實施例中，氣體分配組件625亦可定位成與氣箱820之側壁齊平以確保繞過前驅物經由頂板1020中之孔1025進入氣體分配組件625。
第 11 圖 圖示根據本技術之實施例之蝕刻基板的方法1100。方法1100可包括將含氯前驅物傳遞至RPS單元，同時在操作1110處生成電漿以產生電漿排出物。在操作1120處，電漿排出物可流入處理腔室中並穿過石英氣體分配板。在操作1030處，電漿排出物可蝕刻安放在處理腔室中之基板。處理腔室可為在上段中論述之任一腔室。蝕刻操作在實施例中可在約300℃與約500℃之間的溫度下進行，及在實施例中可在約300℃以下進行。
蝕刻製程可另外包括引入一或多種前驅物，此等一或多種前驅物經由先前所述埠之任一者繞過RPS單元。在實施例中腔室可維持在真空下，及亦可增壓至約1托或更多，諸如高達約3托、高達約5托、高達約10托、高達約20托或更高。當在關於先前圖式描述之腔室之一者中執行方法1100時，可保護腔室部件隔開電漿排出物。因此，腔室部件可能劣化速度不如未受保護部件快，及可能需要比一些習知腔室部件更少地維護、更少地清洗及更少的替換頻次。另外，所述腔室可允許自遠端電漿單元至基板之較短流動路徑，此可由於解離氯之較少重新組合而增大蝕刻操作之效率。
在先前描述中，為說明之目的，已闡明眾多詳述以提供對本技術之各實施例的理解。這對於熟習此項技術者來說是顯而易見的，然而，某些實施例可在無這些細節之情況下，或在具有額外細節之情況下進行實踐。
已經揭示了若干實施例，熟習此項技術者應認識到，在不脫離實施例之精神的情況下，可以使用各種修改，替代構造及等效物。另外，許多已知製程及元件尚未描述以避免對本技術之不必要的模糊。因此，上文描述將不應視為對本技術範疇之限制。
在提供大量數值之情況下，應理解，除非上下文另有明確說明，在該範圍之上限與下限之間的每個中間值除了下限單位的最小部分亦被具體揭示。包含在規定範圍內之任何規定值或未規定中間值與在規定範圍內之任何其他規定或中間值之間的任何較窄範圍。這些較小範圍之上限及下限可以獨立地被包括在此範圍內或被排除此範圍，並且在技術中亦包括在較小範圍內包括兩者或兩者中的任一個或兩個限制的每個範圍，每個範圍可以具體排除在所述範圍內之任何限值。凡聲明之範圍包括一個或兩個之限值，亦包括排除任何一個或兩個所包括限值之範圍。
如本文及在所附申請專利範圍中使用，單數形式「一(a)」、「一(an)」及「此」包括複數引用，除非上下文另有明確指示。因而，例如，對「一孔」之引用包括複數個這種孔，及對「此板」之引用包括對一或多個板及熟習此項技術者已知之其等效物的引用等。
此外，當在本說明書及所附申請專利範圍中使用時，詞語「包含（comprise（s））」，「包含（comprising）」，「包含（contain（s））」，「包含（containing）」，「包括（include（s））」和「包括（including）」意欲指定所聲明之特徵、整數、部件或操作之存在，但它們並不排除一個或多個其他特徵、整數、部件、操作、動作或組群之存在或添加。
100‧‧‧系統102‧‧‧前開式晶圓盒(FOUP)對104‧‧‧機器臂
106:固持區
108a:第三處理腔室
108b:第三處理腔室
108c:處理腔室
108d:處理腔室
108e:處理腔室
108f:處理腔室
109a:串聯區域
109b:串聯區域
109c:串聯區域
110:第二機器臂
200:處理系統
205:處理腔室/支架
210:遠端電漿源單元(remote plasma source；RPS)
212:平台
214:支撐構件
216:送料管
218:凸緣配接器
220:氣箱
222:間隔物
225:氣體分配組件
230:泵送襯墊
235:台座
305:支架
307‧‧‧支撐凸緣309‧‧‧墊圈310‧‧‧氣體分配板310a‧‧‧氣體分配板310b‧‧‧氣體分配板312‧‧‧環形襯墊314‧‧‧頂板321‧‧‧第一表面323‧‧‧凹進壁架324‧‧‧第二表面400‧‧‧轉移系統405a‧‧‧墊圈或O型環405b‧‧‧墊圈或O型環405c‧‧‧墊圈或O型環410‧‧‧配接器415‧‧‧配接器600‧‧‧處理系統605‧‧‧處理腔室610‧‧‧RPS單元612‧‧‧平台614‧‧‧支撐構件616‧‧‧送料管618‧‧‧凸緣配接器620‧‧‧氣箱
622:第一環形支撐件
623:第一通道
624:第二環形支撐件
625:氣體分配組件
626:第二通道
627:第二氣體分配板
631a:銷
631b:銷
631c:銷
725:氣體分配板
800:處理腔室
805:處理腔室
816:送料管
818:配接器凸緣
820:氣箱
825:埠
827:通道
828:孔
829:插入件
830:混合區
831:第一混合段
833:第二混合段
835:第三混合段
840:第一氣箱板
842‧‧‧第二氣箱板845‧‧‧通道847‧‧‧埠949‧‧‧通道1020‧‧‧頂板1025‧‧‧孔1100‧‧‧方法1110‧‧‧操作1120‧‧‧操作1130‧‧‧操作
參考本說明書之剩餘部分及圖式可實現對本揭示實施例之特性及優勢的進一步理解。
第1圖圖示示範性處理系統之一個實施例的俯視平面圖。
第2圖圖示根據本技術之實施例之示範性處理系統的示意橫截面圖。
第3圖圖示根據本技術之實施例之示範性處理腔室的一部分的示意橫截面圖。
第4圖圖示根據本技術之實施例之示範性處理腔室的傳遞系統的示意橫截面圖。
第5A圖圖示根據本技術之實施例之示範性氣體分配板的俯視平面圖。
第5B圖圖示根據本技術之實施例之示範性氣體分配板的俯視平面圖。
第6圖圖示根據本技術之實施例之示範性處理腔室的部分的一部分示意橫截面圖。
第7圖圖示根據本技術之實施例之示範性氣體分配板的橫截面平面圖。
第8圖圖示根據本技術之實施例之示範性處理腔室的一部分的示意橫截面圖。
第9圖圖示根據本技術之實施例之示範性氣箱佈置的橫截面平面圖。
第10圖圖示根據本技術之實施例之示範性氣箱佈置的一部分的橫截面圖。
第11圖圖示根據本技術之實施例之蝕刻基板的方法。
在附圖中，類似部件及/或特徵可具有相同元件符號。另外，可以藉由元件符號後加上在相似部件及/或特徵之間區分的字母來區分相同類型之各種部件。如若在本說明書中只使用第一元件符號，則描述適用於具有相同之第一元件符號而不管字母後綴的類似部件及/或特徵之任一者。
無
200‧‧‧處理系統
205‧‧‧處理腔室/支架
210‧‧‧遠端電漿源單元(RPS)
212‧‧‧平台
214‧‧‧支撐構件
216‧‧‧送料管
218‧‧‧凸緣配接器
220‧‧‧氣箱
222‧‧‧間隔物
225‧‧‧氣體分配組件
230‧‧‧泵送襯墊
235‧‧‧台座

Claims (19)

  1. 一種半導體處理系統，包含：一遠端電漿源；一送料管，與該遠端電漿源耦接；及一半導體處理腔室，其中該半導體處理腔室包含：一氣箱，在該送料管之一遠端區域周圍耦接，其中該氣箱包含彼此耦接之一第一氣箱板及一第二氣箱板，其中該第二氣箱板界定在該第二氣箱板的一第一上表面內的複數個通道，及其中該耦接的第一氣箱板的一下表面與該第二氣箱板的該第一上表面界定穿過該複數個通道之一流動路徑；一第一環形支撐件，在該第一環形支撐件的一第一表面處接觸該氣箱，其中該第一環形支撐件與該氣箱一起界定該半導體處理腔室之一內部區域周圍的一第一通道，及其中該第二氣箱板沿著該第二氣箱板的一第二表面至少部分地接觸該第一環形支撐件，該第二氣箱板的該第二表面在該第二氣箱板的該第一表面對面，該第二氣箱板的該第一表面接觸該第一氣箱板；以及一氣體分配板，安裝在該第一通道內。
  2. 如請求項1所述之半導體處理系統，進一步包含： 一環形襯墊，安裝在該氣體分配板上；及一頂板，安裝在該環形襯墊上，其中該環形襯墊與該頂板兩者至少部分地安裝在該第一通道內。
  3. 如請求項1所述之半導體處理系統，進一步包含在該第一環形支撐件的一第二表面處接觸該第一環形支撐件的一第二環形支撐件，該第一環形支撐件的該第二表面在該第一環形支撐件的該第一表面對面，其中該第二環形支撐件與該第一環形支撐件一起界定在該半導體處理腔室的一內部區域周圍的一第二通道。
  4. 如請求項3所述之半導體處理系統，其中該氣體分配板包含一第一氣體分配板，該半導體處理系統進一步包含安裝在該第二通道內的一第二氣體分配板。
  5. 如請求項4所述之半導體處理系統，其中該第一氣體分配板與該第二氣體分配板包含石英、一陶瓷、或經塗覆鋁。
  6. 如請求項1所述之半導體處理系統，進一步包含可拆卸地將該氣體分配板與該第一環形支撐件耦接的至少一個銷。
  7. 如請求項1所述之半導體處理系統，其中該送料管界定該遠端電漿源與該氣箱之間的一通道的至 少一部分，該通道的至少一部分經配置以允許將前驅物移送穿過該送料管進入該半導體處理腔室，該前驅物繞過該遠端電漿源。
  8. 如請求項7所述之半導體處理系統，進一步包含定位在該送料管內的一插入件，其中該插入件提供自該遠端電漿源與該送料管的該通道的至少一部分至該插入件的一混合區的一入口。
  9. 如請求項8所述之半導體處理系統，其中該插入件的該混合區包含以自該入口至該插入件的該混合區的一逐漸變細的形狀為特徵的一第一混合段，及其中該插入件的該混合區包含以自靠近該第一混合段的一位置至該送料管的一出口的一擴展內徑為特徵的一第二混合段。
  10. 如請求項9所述之半導體處理系統，其中該插入件的該混合區進一步包含以具有小於該送料管的該內徑的一半的一內徑的一圓柱形形狀為特徵的一第三混合段。
  11. 如請求項1所述之半導體處理系統，其中該第一氣箱板界定一埠，該埠提供至界定在該第二氣箱板中的該複數個通道的一通道的一入口。
  12. 如請求項11所述之半導體處理系統，其中界定在該第二氣箱板中的該複數個通道經配置以將在 該埠中接收的一前驅物徑向向外分配穿過界定在該第二氣箱板中的該複數個通道。
  13. 如請求項12所述之半導體處理系統，其中該第二氣箱板界定至少一入口通道，該至少一入口通道提供自該複數個通道至該半導體處理腔室的一內部區域的一入口。
  14. 一種半導體處理系統，包含：一遠端電漿源；一送料管，與該遠端電漿源耦接；及一半導體處理腔室，其中該半導體處理腔室包含：一氣箱，提供至該半導體處理腔室的一入口，其中該氣箱包含沿著一第二氣箱板的一第一表面與該第二氣箱板耦接之一第一氣箱板，其中該第二氣箱板界定在該第二氣箱板的該第一上表面內的複數個通道，及其中該耦接的第一氣箱板與該第二氣箱板界定在該第一氣箱板的一下表面與該第二氣箱板的該第一上表面之間的穿過該複數個通道之一流動路徑；一第一環形支撐件，在該第一環形支撐件的一第一表面處接觸該氣箱，其中該第一環形支撐件與該氣箱各自界定該位在該氣箱與該第一環形支撐件的一介面處的一第一通道的一部分； 一第一氣體分配板，安裝在該第一通道內；一第二環形支撐件，在該第一環形支撐件的一第二表面處接觸該第一環形支撐件，該第一環形支撐件的該第二表面在該第一環形支撐件的該第一表面對面，其中該第二環形支撐件至少部分地界定一第二通道，該第二通道位在該半導體處理腔室之一內部區域周圍；以及一第二氣體分配板，安裝在該第二通內，其中該第一氣體分配板與該第二氣體分配板包含石英。
  15. 如請求項14所述之半導體處理系統，進一步包含：一環形襯墊，安裝在該第一氣體分配板上；及一頂板，安裝在該環形襯墊上，其中該環形襯墊與該頂板兩者至少部分地安裝在該第一通道內。
  16. 如請求項14所述之半導體處理系統，其中該第一氣體分配板與該第二氣體分配板以類似形狀為特徵，及該第一氣體分配板與該第二氣體分配板各自界定位在該氣體分配板周圍的多個環中的複數個孔。
  17. 如請求項14所述之半導體處理系統，其中該第一氣箱板界定一埠，該埠提供至界定在該第二氣箱板中的複數個通道的一通道的一入口。
  18. 如請求項17所述之半導體處理系統，其中 界定在該第二氣箱板中的該複數個通道經配置以將在該埠中接收的一前驅物徑向向外分配穿過界定在該第二氣箱板中的該複數個通道。
  19. 如請求項18所述之半導體處理系統，其中該第二氣箱板界定至少一入口通道，該至少一入口通道提供自該複數個通道至該半導體處理腔室的一內部區域的一入口。
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