TWI745826B - 處理腔室混合系統及與其相關的方法 - Google Patents

處理腔室混合系統及與其相關的方法 Download PDF

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TWI745826B
TWI745826B TW109100445A TW109100445A TWI745826B TW I745826 B TWI745826 B TW I745826B TW 109100445 A TW109100445 A TW 109100445A TW 109100445 A TW109100445 A TW 109100445A TW I745826 B TWI745826 B TW I745826B
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甘納許 蘇布司瓦梅
史蒂芬 瓦內特
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美商應用材料股份有限公司
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Abstract

示例性的處理系統可包含：一處理腔室，且可包含：一遠端電漿單元，該遠端電漿單元與該處理腔室耦接。示例性的系統亦可包含：耦接在該遠端電漿單元與該處理腔室之間的一混合歧管。該混合歧管可藉由一第一端和與該第一端相對的一第二端來表徵，並且可與該處理腔室相耦接於該第二端處。該混合歧管可界定穿過該混合歧管的一中央通道，及可沿著該混合歧管的一外部界定一埠口。該埠口可與界定在該混合歧管的該第一端內的一第一溝槽流體地耦接。該第一溝槽可藉由在一第一內側壁處的一內半徑和一外半徑來表徵，且該第一溝槽可提供通往穿過該第一內側壁的該中央通道的流體通路。

Description

處理腔室混合系統及與其相關的方法
本技術關於系統、製程及設備。更為特定地，本技術關於用於在系統和腔室內傳遞前驅物的系統和方法。
藉由在基板表面上產生複雜的圖案化的材料層的製程使得積體電路成為可能。在基板上產生圖案化的材料需要受控制的方法以去除暴露的材料。化學蝕刻用於多種目的，該等目的包含：將光阻劑中的圖案轉移到下面的層、變薄的層，或在表面上已經存在的特徵的變薄的橫向尺寸。通常期望具有一種蝕刻製程，該蝕刻製程對於蝕刻一種材料的蝕刻速度快於蝕刻另一種材料的蝕刻速度，以促進(例如)圖案轉移製程或單個材料的去除。據說此種蝕刻製程對於第一種材料是具有選擇性的。由於材料、電路及製程的多樣性，已經開發出對各種材料具有選擇性的蝕刻製程。
基於在製程中使用的材料，蝕刻製程可被稱為濕式或乾式。濕式HF蝕刻優先於其他的介電質和材料去除二氧化矽(silicon oxide)。然而，濕式製程可能難以穿透某些受到限制的溝槽，並且有時候也可能會使得其餘的材料變形。乾式蝕刻製程可能滲透至複雜的特徵和溝槽，但是 可能無法提供可接受的自上至下的輪廓。隨著在下一代的裝置中裝置尺寸持續地縮小，將前驅物傳遞至腔室並通過腔室的方式可能會產生越來越大的影響。隨著處理條件的一致性的重要性持續地提高，腔室設計和系統設置可能針對於產生的裝置的品質扮演重要的角色。
因此，需要可被使用以產生高品質的裝置和結構的改進的系統和方法。此些和其他的需求是藉由本技術來解決。
示例性的處理系統可包含：一處理腔室，且可包含：一遠端電漿單元，該遠端電漿單元與該處理腔室耦接。系統可包含：併入於該處理腔室與該遠端電漿單元之間的一擋板。示例性的系統亦可包含：一混合歧管，該混合歧管耦接在該遠端電漿單元與該處理腔室之間。該混合歧管可藉由一第一端和與該第一端相對的一第二端來表徵，並可與該處理腔室相耦接於該第二端處。該混合歧管可界定穿過該混合歧管的一中央通道，且可沿著該混合歧管的一外部界定一埠口。該埠口可與界定在該混合歧管的該第一端內的一第一溝槽流體地耦接。該第一溝槽可藉由在一第一內側壁處的一內半徑和一外半徑來表徵，且該第一溝槽可提供通往穿過該第一內側壁的該中央通道的流體通路。
在一些實施例中，該混合歧管亦可包含：一第二溝槽，該第二溝槽被界定在該混合歧管的該第一端內。該第二溝槽可從該第一溝槽徑向向外定位，該埠口可與該第二 溝槽流體地耦接，且該第二溝槽可藉由在一第二內側壁處的一內半徑來表徵。該第二內側壁亦可界定該第一溝槽的外半徑，且該第二內側壁可界定複數個孔，該等孔被界定為穿過該第二內側壁，且提供通往該第一溝槽的流體通路。該擋板可被設置在該混合歧管的上游處。該擋板可為一第一擋板，且該處理系統亦可包含：一第二擋板，該第二擋板設置在該混合歧管的下游處。該第一擋板和該第二擋板各自可界定一或多個孔，且該第一擋板可藉由與該第二擋板不同的一孔輪廓來表徵。
該擋板可界定穿過該擋板的複數個孔。該複數個孔中的每個孔可從作為一入口的該擋板的一第一表面通過作為一出口的與該擋板的該第一表面相對的該擋板的一第二表面來界定。該出口可圍繞垂直於該擋板且延伸通過該入口的一軸而相對於該入口徑向地偏移以界定穿過每個孔的一旋轉通道。該擋板可包含：陶瓷或塗覆的鋁。該系統亦可包含：一隔離器，該隔離器耦接在該混合歧管與該遠端電漿單元之間。該隔離器可為陶瓷或包含陶瓷。該系統亦可包含：一適配器，該適配器被耦接在該混合歧管與該遠端電漿單元之間。該適配器可藉由一第一端和與該第一端相對的一第二端來表徵。該適配器可界定一中央通道，該中央通道部分地穿過該適配器延伸。該適配器可界定穿過該適配器的一外部的一埠口。該埠口可與被界定在該適配器內的一混合通道流體地耦接，且該混合通道可與該中央通道流體地耦接。該擋板可位於被界定在該適配器的該第 二端中的一凹部中。該系統亦可包含：設置在該適配器與該混合歧管之間的一間隔件。
本技術的一些實施例可涵蓋處理系統。該處理系統可包含：一遠端電漿單元。該系統可包含：一處理腔室，該處理腔室可包含：一氣體箱，該氣體箱界定一中央通道及一阻擋板，該阻擋板與該氣體箱耦接。該阻擋板可界定穿過該阻擋板的複數個孔。該腔室亦可包含：一面板，該面板與該阻擋板相耦接於該面板的一第一表面處。該腔室可包含：一擋板。該系統亦可包含：一混合歧管，該混合歧管與該氣體箱耦接。該混合歧管可藉由一第一端和與該第一端相對的一第二端來表徵。該混合歧管可與該處理腔室耦接於該第二端處。該混合歧管可界定穿過該混合歧管的一中央通道，其中該混合歧管與被界定為通過該氣體箱的該中央通道流體地耦接。該混合歧管可沿著該混合歧管的一外部來界定一埠口。該埠口可與被界定在該混合歧管的該第一端內的一第一溝槽流體地耦接。該第一溝槽可藉由在一第一內側壁處的一內半徑和一外半徑來表徵，且該第一溝槽可提供通往穿過該第一內側壁的該中央通道的流體通路。
在一些實施例中，該系統亦可包含：一加熱器，該加熱器圍繞耦接至該氣體箱的一混合歧管而在外部耦接至該氣體箱。該擋板可為一第一擋板，該第一擋板設置在該混合歧管的上游處。該處理系統亦可包含：一第二擋板，該第二擋板被設置在該混合歧管的下游處，且位於被界定 在該混合歧管的該第二端的一凹部中。該系統亦可包含：一適配器，該適配器與該遠端電漿單元相耦接。該適配器可藉由一第一端和與該第一端相對的一第二端來表徵。該適配器可界定一中央通道，該中央通道從該第一端至該適配器的一中點部分地延伸穿過該適配器。該適配器可界定複數個進入通道，該等進入通道從該適配器的該中點朝向該適配器的該第二端延伸，且該複數個進入通道可圍繞通過該適配器的一中心軸徑向地分佈。該適配器可界定穿過該適配器的一外部的一埠口。該埠口可與被界定在該適配器內的一混合通道流體地耦接。該混合通道可穿過該適配器的一中央部分朝向該適配器的該第二端延伸。該適配器可界定穿過該適配器的一外部的一埠口。該埠口可與被界定在該適配器內的一混合通道流體地耦接。該混合通道可穿過該適配器的一中央部分朝向該適配器的該中點延伸以流體地進入由該適配器界定的該中央通道。
本技術的一些實施例亦可涵蓋傳遞前驅物通過一處理系統的方法。該方法可包含以下步驟：在一遠端電漿單元中形成一含氟的前驅物的一電漿。該方法可包含以下步驟：使得該含氟的前驅物的電漿流出物流入一適配器。該方法可包含以下步驟：使得一含氫的前驅物流入該適配器。該方法可包含以下步驟：將含氫的前驅物與電漿流出物混合以產生一第一混合物。該方法可包含以下步驟：使得該第一混合物流入一混合歧管。該方法可包含以下步驟：使得一第三前驅物流入該混合歧管。該方法亦可包含 以下步驟：將該第三前驅物與該第一混合物混合以產生一第二混合物。可使得該第一混合物或該第二混合物中的一者流動通過一擋板。在一些實施例中，一第一擋板可被併入於該混合歧管的上游處。
此種技術可提供相對於傳統的系統和技術的許多好處。舉例而言，與傳統的設計相比，本技術可利用有限數量的組件。此外，藉由利用在腔室外部產生蝕刻劑物質和控制對於腔室進行的傳遞的組件，可以比傳統的系統更為均勻地提供混合和對於基板的傳遞。結合後文的描述和隨附的圖式更為詳細地描述此些和其他的實施例和它們的優點和特徵中的許多者。
100:處理系統
102:前開式晶圓傳送盒
104:機械手臂
106:低壓保持區域
108a:基板處理腔室
108b:基板處理腔室
180c:基板處理腔室
108d:基板處理腔室
108e:基板處理腔室
108f:基板處理腔室
109a:串聯部分
109b:串聯部分
109c:串聯部分
110:機械手臂
200:系統
205:處理腔室
210:遠端電漿單元
211:第一端
212:第二端
213:通道
214:孔
215:隔離器
217:第一端
218:第二端
219:中央通道
220:適配器
221:中央通道
222:埠口
223:混合通道
224:第一部分
225:孔
226a:第二部分
226b:第二部分
227:溝槽
228:溝槽
229:第一擋板
230:間隔件
232:中央孔
235:混合歧管
236:第一端
237:第二端
238:中央通道
239:埠口
240:第一溝槽
241:第二溝槽
242:第一部分
243:通道
246:擴口部分
247:出口
248:加熱器
249:第二擋板
250:氣體箱
252:入口
253:第一表面
254:中央通道
255:第二表面
257:空間
258:空間
260:阻擋板
263:孔
265:凸起的環形部分
266:降低的環形部分
270:面板
272:第一表面
273:突出部分
274:第二表面
275:第三空間
280:離子抑制元件
290:蓋間隔件
605:第一內側壁
606:孔
608:孔
610:第一外側壁
615:溝槽
900:擋板
910:孔
920:孔
930:孔輪廓
940:孔輪廓
1000:方法
1005:操作
1010:操作
1015:操作
1020:操作
1025:操作
1030:操作
1035:操作
可藉由參照說明書的其餘的部分和圖式來實現對於所揭示的技術的本質和優點的進一步的理解。
第1圖圖示根據本技術的一些實施例的示例性的處理系統的俯視圖。
第2圖圖示根據本技術的一些實施例的示例性的處理腔室的示意性的橫截面圖。
第3圖圖示根據本技術的一些實施例的隔離器的示意性的部分的底部平面圖。
第4圖圖示根據本技術的一些實施例的適配器的示意性的部分的俯視圖。
第5圖圖示根據本技術的一些實施例的通過第2圖的線段A-A的適配器的示意性的橫截面圖。
第6圖圖示根據本技術的一些實施例的混合歧管的示意性的透視圖。
第7圖圖示根據本技術的一些實施例的通過第6圖的線段B-B的混合歧管的示意性的橫截面圖。
第8圖圖示根據本技術的一些實施例的通過第6圖的線段C-C的混合歧管的示意性的橫截面圖。
第9A圖至第9D圖圖示根據本技術的一些實施例的示例性的擋板的示意性的平面圖。
第10圖根據本技術的一些實施例來圖示傳遞前驅物通過處理系統的方法的操作。
圖式中的一些者作為示意圖被包含在內。應理解到圖式是用於達到示例說明性的目的，而不應被認為是按照比例繪製的(除非特別說明是按比例繪製的)。此外，作為示意圖，圖式被提供以幫助理解，並且相較於實際的表示可能不包含所有的態樣或資訊，且可能包含放大的材料以達到示例說明性的目的。
在隨附的圖式中，類似的組件和/或特徵可具有相同的參照標記。此外，相同類型的各個組件可以藉由在參照標記後面加上一個字母來加以區別(其中該字母在類似的組件之間作出區別)。若在說明書中僅使用最前面的參照標記，則該描述適用於具有相同的最前面的參照標記的類似的組件中的任何一個，而與字母無關。
本技術包含：用於執行半導體製造操作的半導體處理系統、腔室及組件。在半導體製造期間執行的許多的乾式蝕刻操作可能涉及到多個前驅物。當以各種方式賦予能量和進行組合時，此些蝕刻劑可被傳遞至基板以去除或修改基板的態樣。傳統的處理系統可利用多種方式來提供前驅物以(例如)用於沉積或蝕刻。提供增強的前驅物的一種方式是在傳遞前驅物通過處理腔室並到達基板(例如，晶圓)來進行處理之前，提供所有的前驅物通過遠端電漿單元。然而，此製程的問題是不同的前驅物可能與不同的材料反應，此可能導致遠端電漿單元或傳遞前驅物的組件受到損壞。舉例而言，增強的含氟的前驅物可以與鋁表面反應，但是可不與氧化物表面反應。增強的含氫的前驅物可不與在遠端電漿單元內的鋁表面反應，但是可與氧化物塗層反應並去除氧化物塗層。因此，若兩種前驅物一起被傳遞通過遠端電漿單元，它們可能會損壞在單元內的塗覆或內襯。此外，點燃電漿的功率可能藉由產生的解離量來影響正在執行的製程。舉例而言，在一些製程中，對於含氫的前驅物的高解離量可能是有益的，但是對於含氟的前驅物的低解離量可允許更受到控制的蝕刻。
傳統的處理亦可傳遞一種前驅物通過遠端電漿裝置以進行電漿處理，並且可將第二前驅物直接地傳遞至腔室。然而，此製程的問題是：前驅物的混合可能是困難的、可能無法提供對於蝕刻劑產生的充分的控制，並且可能無 法在晶圓或基板處提供均勻的蝕刻劑。此可能導致：在基板的整個表面上無法均勻地執行製程，其可能隨著圖案化和形成繼續進行而造成裝置的問題。
本技術可藉由利用經配置以在將前驅物傳遞至腔室之前混合前驅物的組件和系統來克服此些問題，而僅使得一種蝕刻前驅物被傳遞通過遠端電漿單元(儘管多種前驅物亦可流動通過遠端電漿單元(例如，載氣或其他的蝕刻前驅物))。本技術可涵蓋：進一步地混合和均質化被傳遞通過系統的前驅物的流動裝置(例如，擋板)。特定的旁路架構可在將前驅物傳遞至處理腔室之前將其充分地混合，且可在將每個前驅物加入系統時提供中間的混合。如此可允許：在執行均勻的製程的同時保護遠端電漿單元。本技術的腔室亦可包含：使得通過腔室的熱導率最大化，且藉由以特定的方式來耦接組件以增加維修的容易性的組件配置。
儘管其餘的揭示內容將常規地利用所揭示的技術來識別特定的蝕刻製程，將容易地理解到系統和方法同樣地適用於在描述的腔室中可能發生的沉積和清潔製程。因此，技術不應該被認為是受到如此的限制而僅與蝕刻製程一起使用。本揭露將在描述根據本技術的實施例的組件態樣和對於此系統的變化之前，論述可與本技術一起使用以執行某些去除操作的一種可能的系統和腔室。
第1圖圖示根據實施例的沉積、蝕刻、烘烤及固化腔室的處理系統100的一個實施例的俯視圖。在圖式中， 一對前開式晶圓傳送盒(FOUP)102供應各種尺寸的基板，該等基板是藉由機械手臂104接收且放置到低壓保持區域106，隨後再放置到基板處理腔室108a-f中的一者，該等基板處理腔室被設置在串聯部分109a-c中。第二機械手臂110可被使用以將基板晶圓從保持區域106傳送至基板處理腔室108a-f並返回。每個基板處理腔室108a-f可被裝配成執行一些基板處理操作，其中除了循環層沉積(CLD)、原子層沉積(ALD)、化學氣相沉積(CVD)、物理氣相沉積(PVD)、蝕刻、預先清洗、脫氣、定向及其他的基板製程之外，該等基板處理操作包含：在本文中描述的乾式蝕刻製程。
基板處理腔室108a-f可包含：用於對於在基板晶圓上的介電膜進行沉積、退火、固化及/或蝕刻的一或多個系統組件。在一配置中，可使用二對的處理腔室(例如，108c-d和108e-f)以將介電質材料沉積在基板上，且可使用第三對的處理腔室(例如，108a-b)以蝕刻沉積的介電質。在另一個配置中，所有的三對腔室(例如，108a-f)可經配置以蝕刻在基板上的介電膜。所描述的製程中的任何的一或多個可以在與不同的實施例中圖示的製造系統分離的腔室中進行。將理解到的是：系統100考慮到用於介電膜的沉積、蝕刻、退火及固化腔室的額外的配置。
第2圖圖示根據本技術的實施例的示例性的處理系統200的示意性的橫截面圖。系統200可包含：處理腔室205和遠端電漿單元210。遠端電漿單元210可與具有一或 多個組件的處理腔室205耦接。遠端電漿單元210可與隔離器215、適配器220、間隔件230及混合歧管235中的一或多個相耦接。混合歧管235可與處理腔室205的頂部耦接，並且可與處理腔室205的入口耦接。
隔離器215可與遠端電漿單元210相耦接於第一端211處，且可與適配器220相耦接於與第一端211相對的第二端212處。可藉由隔離器215來界定一或多個通道。在第一端211處可界定通向通道213的開口或埠口。通道213可被界定在隔離器215內的中間處，且可藉由在垂直於通過隔離器215的中心軸的方向上的第一橫截面表面區域來表徵，其中隔離器可在從遠端電漿單元210流出的方向上。通道213的直徑可以等於遠端電漿單元210的出口的直徑(或與遠端電漿單元210的出口的直徑相同)。通道213可藉由從第一端211至第二端212的長度來表徵。通道213可延伸通過隔離器215的整個長度，或小於從第一端211至第二端212的長度的長度。舉例而言，通道213可延伸小於從隔離器215的第一端211至第二端212的長度的一半的長度、通道213可延伸隔離器215的從第一端211至第二端212的長度的一半的長度、通道213可延伸多於隔離器215的從第一端211至第二端212的長度的一半的長度，或通道213可延伸隔離器215的從第一端211至第二端212的長度的大約一半的長度。
通道213可以過渡至較小的孔214，該等孔從被界定在隔離器215內的通道213的底部延伸通過第二端 212。舉例而言，一個此類較小的孔214被示例說明於第2圖中(雖然應理解到可從通道213通過隔離器215至第二端212來界定任何數目的孔214)。較小的孔可以圍繞隔離器215的中心軸來分佈(如同將於後文中進一步地論述者)。較小的孔214可藉由小於通道213的直徑的50%的直徑(或通道213的直徑的大約50%的直徑)來表徵，且可藉由小於通道213的直徑的40%的直徑(或通道213的直徑的大約40%的直徑)、小於通道213的直徑的30%的直徑(或通道213的直徑的大約30%的直徑)、小於通道213的直徑的20%的直徑(或通道213的直徑的大約20%的直徑)、小於通道213的直徑的10%的直徑(或通道213的直徑的大約10%的直徑)、小於通道213的直徑的5%的直徑(或通道213的直徑的大約5%的直徑)，或小於通道213的直徑的直徑來表徵。隔離器215亦可界定：被界定在隔離器215下方的一或多個溝槽。溝槽可為(或可包含)被界定在隔離器215內的一或多個環形的凹部以允許o形環或彈性元件的安置，前述者可允許與適配器220耦接。
雖然處理系統的其他的組件可為金屬或導熱材料，隔離器215可為導熱性較低的材料。在一些實施例中，隔離器215可為(或包含)：陶瓷、塑膠，或經配置以提供在遠端電漿單元210與腔室205之間的熱中斷的其他的絕熱組件。在操作期間，遠端電漿單元210可被冷卻或操作在相對於腔室205為較低的溫度，而腔室205可被加熱或操作在相對於遠端電漿單元210為較高的溫度。提供陶瓷或 絕熱隔離器215可防止或限制在組件之間的熱、電或其他的干擾。
在實施例中，適配器220可與隔離器215的第二端212耦接。適配器220可藉由第一端217和與第一端相對的第二端218來表徵。適配器220可界定通過適配器220的部分的一或多個中央通道。舉例而言，從第一端217處開始，中央通道219，或第一中央通道可至少部分地通過適配器220朝向第二端218延伸，且可延伸通過適配器220的任何的長度。類似於隔離器215的中央通道213，中央通道219可延伸小於通過適配器220的長度的一半的長度、可延伸適配器220的長度的大約一半的長度，或可延伸多於適配器220的長度的一半的長度。中央通道219可藉由一直徑來表徵，該直徑可與通道213的直徑相關、等於通道213的直徑，或大致上等於通道213的直徑。此外，中央通道219可藉由限定隔離器215的孔214的周圍(且在實施例中恰好限定孔214的周圍)的形狀的直徑來表徵(例如，藉由基本上類似於或等於從中心軸通過隔離器215界定的半徑且延伸至每個孔214的直徑的外邊緣的半徑來表徵)。舉例而言，中央通道219可藉由圓形或橢圓形來表徵，該圓形或該橢圓形是藉由可與每個孔214的外部分相切地延伸的一或多個直徑來表徵。
適配器220可界定：在該適配器220內的中央通道219的底部，該底部可界定：從中央通道219至可至少部分地延伸通過適配器220的複數個孔225的過渡。過渡可發生 在通過該適配器的中點處，該中點可位於沿著適配器的長度的任何的位置。舉例而言，孔225可從中央通道219的底部朝向適配器220的第二端218延伸，且可完全地延伸通過第二端218。在其他的實施例中，孔225可從進入中央通道219的第一端延伸通過適配器220的中間部分至進入第二中央通道221的第二端，該第二中央通道可延伸通過適配器220的第二端218。中央通道221可藉由類似於中央通道219的直徑來表徵，且在其他的實施例中，中央通道221的直徑可大於或小於中央通道219的直徑。孔225可藉由小於中央通道219的直徑的50%的直徑(或中央通道219的直徑的大約50%的直徑)來表徵，且可藉由小於中央通道219的直徑的40%的直徑(或中央通道219的直徑的大約40%的直徑)、小於中央通道219的直徑的30%的直徑(或中央通道219的直徑的大約30%的直徑)、小於中央通道219的直徑的20%的直徑(或中央通道219的直徑的大約20%的直徑)、小於中央通道219的直徑的10%的直徑(或中央通道219的直徑的大約10%的直徑)、小於中央通道219的直徑的5%的直徑(或中央通道219的直徑的大約5%的直徑)，或小於中央通道219的直徑的直徑來表徵。
適配器220可界定穿過適配器220的外部的埠口222(例如，沿著適配器220的側壁或側部)。埠口222可提供用於傳遞第一混合前驅物以與從遠端電漿單元210提供的前驅物進行混合的通路。埠口222可提供通往可至少部分地通過適配器220朝向適配器220的中心軸延伸的混合 通道223的流體通路。混合通道223可以任何的角度延伸至適配器220，且在一些實施例中，混合通道223的第一部分224可垂直於穿過適配器220的中心軸且延著流動方向延伸(儘管第一部分224可朝向穿過適配器220的中心軸且以傾斜的角度或斜向的角度來前進)。第一部分224可穿過孔225，該等孔可圍繞適配器220的中心軸分佈(類似於在前文中描述的隔離器215的孔214)。藉由此分佈，第一部分224可朝向適配器220的中心軸延伸通過孔225，而不與孔225相交或交叉。
混合通道223的第一部分224可過渡至混合通道223的第二部分226，該第二部分可垂直地穿過適配器220。在一些實施例中，第二部分226可沿著穿過適配器220的中心軸延伸並與該中心軸軸向地對準。第二部分226亦可延伸通過圓形或其他的幾何形狀的中間部分，該圓形或該其他的幾何形狀延伸通過每個孔225的中心軸。第二部分226可與孔225一起延伸至第二中央通道221且與第二中央通道221流體地耦接。因此，在一些實施例中，被傳遞通過埠口222的前驅物可與被傳遞通過在適配器220的下部分內的遠端電漿單元210的前驅物混合。此可以構成在遠端電漿單元210與處理腔室205之間的組件內的第一階段的混合。
在第2圖中額外地示例說明者是一可替代性的實施例，其中混合通道223的第二部分226在相反的方向上垂直地延伸。舉例而言，如同在前文中描述者，第二部分226a 可朝向第二中央通道221垂直地延伸以在此區域內混合。可替代性地，第二部分226b可朝向第一中央通道219垂直地延伸。儘管以隱藏的視圖來示例說明，第二部分226b被示例說明為單獨的實施例，並且應理解到根據本技術的適配器可包含朝向適配器220的第一端217或第二端218延伸的第二部分226的任何的版本。當在朝著第一中央通道219的方向上進行傳遞時，被傳遞通過埠口222的第二前驅物的混合可發生在適配器220的第一部分內，並且可藉由使得被傳遞通過埠口222的前驅物與從遠端電漿單元210傳遞的前驅物一起流動通過複數個孔225來提供改善的均勻性。當朝向第二中央通道221傳遞時，由於前驅物的流動的緣故，可能會發生不太完全的混合，此可能會增加被傳遞通過中央通道221的前驅物的中央濃度。當朝向第一中央通道219傳遞時，通過埠口222的前驅物可在第一中央通道內徑向地分佈，並且更為均勻地行進通過孔225(其中由於來自遠端電漿單元210的向下流動和/或通過腔室的壓力的緣故而迫使前驅物更為均勻地行進通過孔)。
適配器220可由與隔離器215相類似的或不同的材料製成。在一些實施例中，雖然隔離器可包含：陶瓷或絕緣材料，適配器220可由鋁製成或包含鋁(其中包含鋁的氧化物、在一或多個表面上的經處理過的鋁，或某些其他的材料)。舉例而言，適配器220的內表面可以塗覆有一或多種材料以保護適配器220，而避免受到可能由來自遠端電漿單元210的電漿流出物所造成的損壞。適配器220的內 表面可以用可對於氟的電漿流出物呈現惰性的一系列的材料來進行陽極氧化處理(anodized)，並且該等材料可包含(例如)：氧化釔或鈦酸鋇。適配器220亦可界定溝槽227和228，其中該等溝槽可為環形的溝槽，且可經配置以容納o形環或其他的密封元件。
適配器220的第二端218可界定：延伸至適配器的一凹部，並且第一擋板229可位於該凹部內。第一擋板229可以可選擇地被包含在一些系統配置中，並且可提供流動通過適配器220的第一前驅物和第二前驅物的改善的混合。第一擋板229可界定：前驅物可流動通過其中的一或多個孔或通道，該一或多個孔或該通道可增加前驅物的混合的均勻性。第一擋板229將在後文中更為詳細地描述。
與適配器220耦接者可為間隔件230。間隔件230可為(或包含)陶瓷，且可為與在實施例中的隔離器215或適配器220相類似的材料。間隔件230可界定：穿過間隔件230的中央孔232。中央孔232可藉由從靠近適配器220的第二中央通道221的部分穿過間隔件230至間隔件230的相對側的錐形形狀來表徵。中央孔232的靠近第二中央通道221的部分可藉由等於或類似於第二中央通道221的直徑的直徑來表徵。在實施例中，中央孔232可藉由沿著間隔件230的長度的大於或大約10%的錐度的百分比來表徵，且可藉由大於或大約20%、大於或大約30%、大於或大約40%、大於或大約50%、大於或大約60%、大於或大約70%、大於或大約80%、大於或大約90%、大於或大約 100%、大於或大約150%、大於或大約200%、大於或大約300%，或更大的錐度的百分比來表徵。
混合歧管235可與間隔件230耦接於第一端236或第一表面處，且可與腔室205耦接於與第一端236相對的第二端237處。混合歧管235可界定中央通道238，該中央通道可從第一端236延伸至第二端237，且可經配置以將前驅物傳遞至處理腔室205。混合歧管235亦可經配置以將另外的前驅物與從適配器220傳遞的混合的前驅物合併。混合歧管可提供在系統內的第二階段的混合。混合歧管235可沿著混合歧管235的外部(例如，沿著混合歧管235的一側或側壁)界定埠口239。在一些實施例中混合歧管235可界定在混合歧管235的相對側上的多個埠口239以提供用於將前驅物傳遞至系統的額外的通路。混合歧管235亦可界定：在混合歧管235的第一表面236內的一或多個溝槽。舉例而言，混合歧管235可界定第一溝槽240及第二溝槽241，該第一溝槽和該第二溝槽可提供從埠口239至中央通道238的流體通路。舉例而言，埠口239可提供通往通道243的通路，該通道可提供通往一個或二個溝槽的流體通路(例如，從如同示例說明的溝槽的下方)。在後文中將進一步詳細地描述溝槽240、241。
中央通道238可藉由從第一端236延伸至擴口部分246的第一部分242來表徵。第一部分242可藉由圓柱形的輪廓來表徵，且可藉由類似於或等於間隔件230的中央孔232的出口的直徑來表徵。在實施例中，擴口部分246 可藉由大於或大約10%、大於或大約20%、大於或大約30%、大於或大約40%、大於或大約50%、大於或大約60%、大於或大約70%、大於或大約80%、大於或大約90%、大於或大約100%、大於或大約150%、大於或大約200%、大於或大約300%，或更大的擴口的百分比來表徵。在實施例中，混合歧管235可由與適配器220相類似或不同的材料製成。舉例而言，混合歧管235可包含：鎳，其可提供對於前驅物可能接觸混合歧管的所有的部分的足夠的保護。與傳統的技術不同，因為氟電漿流出物可能已經在混合歧管的上游處進行了混合，所以可能不會發生與重新組合有關的問題。舉例而言，在不希望受到任何的特定的理論約束的情況下，鎳可催化氟自由基重新組合為雙原子氟，此可能會導致在傳統的技術中的多晶矽損耗。當氟流出物在傳遞至鎳、鍍鎳或塗覆的組件之前進行混合時，此製程可能會受到限制(因為可能會降低氟流出物的濃度，從而進一步地保護處於基板級別的多晶矽特徵)。
擴口部分246可為被傳遞通過混合歧管235而藉由出口247通過第二端237的前驅物提供出口。穿過混合歧管235的中央通道238的部分可經配置以在提供混合的前驅物至腔室205之前提供：被傳遞至混合歧管的前驅物的充分或徹底的混合。與傳統的技術不同，藉由在傳遞至腔室之前進行蝕刻劑或前驅物的混合，本系統可提供在圍繞腔室和基板分佈之前具有均勻的特性的蝕刻劑。此外，藉由提供多個階段的混合，可對於前驅物中的每一者提供更 具有均勻性的混合。使用此方式，利用本技術執行的製程可具有在整個基板表面上的更為均勻的結果。所示例說明的組件的堆疊亦可藉由減少包含在堆疊中的彈性密封件的數目來限制顆粒的積聚，該等彈性密封件可能隨著時間推移而退化，並產生可能會影響正在執行的製程的顆粒。
類似於先前描述的第一擋板229，本技術的一些實施例可以可選擇地包含：第二擋板249，其中當第二擋板被包含時，其可與第一擋板229一起被包含在內，或代替第一擋板229。混合歧管235的第二端237可界定：延伸至混合歧管的凹部，且第二擋板249可被安置在凹部內。第二擋板249可以可選擇地被包含在一些系統配置中，並且可提供第三前驅物與流動通過混合歧管235的第一前驅物和第二前驅物的混合物的改善的混合。第二擋板249亦可進一步地當僅包含兩個主要前驅物時，將第二前驅物與第一前驅物混合，其中該兩個主要前驅物亦可包含另外的載氣或其他的材料。第二擋板249可界定前驅物可流動通過其中的一或多個孔或通道，該等孔或該等通道可增加前驅物的混合的均勻性。在後文中將更為詳細地描述第二擋板249。
腔室205可包含：具有堆疊排置的數個組件。腔室堆疊可包含：氣體箱250、阻擋板260、面板270、可選擇的離子抑制元件280，以及蓋間隔件290。組件可被利用以分配通過腔室的前驅物或一組前驅物而將蝕刻劑或其他的前驅物均勻地傳遞至基板以進行處理。在實施例中，此些 組件可以是堆疊的板，每個堆疊板至少部分地界定腔室205的外部。
氣體箱250可界定腔室入口252。中央通道254可被界定為穿過氣體箱250以將前驅物傳遞至腔室205。入口252可與混合歧管235的出口247對準。在實施例中，入口252和/或中央通道254可藉由類似的直徑來表徵。中央通道254可延伸穿過氣體箱250，且經配置以將一或多個前驅物傳遞至由氣體箱250從上方界定的空間257。氣體箱250可包含：第一表面253(例如，頂表面)，以及與第一表面253相對的第二表面255(例如，氣體箱250的底表面)。在實施例中，頂表面253可為平面或大致上為平面的表面。與頂表面253耦接者可為加熱器248。
在實施例中，加熱器248可經配置以加熱腔室205，並且可傳導性地加熱每個蓋堆疊組件。加熱器248可為任何種類的加熱器，該加熱器包含：流體加熱器、電加熱器、微波加熱器，或經配置以將熱傳導性地傳遞至腔室205的其他的裝置。在一些實施例中，加熱器248可為(或可包含)：圍繞氣體箱250的第一表面253且以環形圖案形成的電加熱器。加熱器可跨越氣體箱250，並且圍繞在混合歧管235周圍來界定。加熱器可為板加熱器或電阻性元件加熱器，其可經配置以提供高達2,000W、大約2,000W，或大於大約2,000W的熱，並且可經配置以提供大於或大約2,500W、大於或大約3,000W、大於或大 約3,500W、大於或大約4,000W、大於或大約4,500W、大於或大約5,000W，或更高瓦數的熱。
在實施例中，加熱器248可經配置以產生高達50℃、大約50℃，或大於大約50℃的可變的腔室組件溫度，並且可經配置以產生大於或大約75℃、大於或大約100℃、大於或大約150℃、大於或大約200℃、大於或大約250℃、大於或大約300℃，或更高的腔室組件溫度。加熱器248可經配置以將個別的組件(例如，離子抑制元件280)的溫度升高至此些溫度中的任何者以促進處理操作(例如，退火)。在一些處理操作中，可以將基板朝向離子抑制元件280升高以進行退火操作，並且可以調整加熱器248以將加熱器的溫度傳導性地提升至前文所述的任何的特定的溫度，或在所述的溫度的任何者之內(或者之間)的任何的溫度範圍內。
氣體箱250的第二表面255可與阻擋板260耦接。阻擋板260可藉由等於或類似於氣體箱250的直徑的直徑來表徵。阻擋板260可界定：穿過阻擋板260的複數個孔263，其中僅示例說明孔的一樣本，該等孔可允許來自空間257的前驅物(例如，蝕刻劑)的分散，並且可開始分配前驅物而通過腔室205以均勻地傳遞至基板。雖然僅示例說明了數個孔263，應理解到阻擋板260可具有穿過結構界定的任何數目的孔263。阻擋板260可藉由在阻擋板260的外徑處的凸起的環形部分265，以及在阻擋板260的外徑處的降低的環形部分266來表徵。在實施例中，凸起的環 形部分265可為阻擋板260提供結構剛性，並且可界定空間257的側面和外徑。阻擋板260亦可從下方界定空間257的底部。空間257可允許在通過阻擋板260的孔263之前，從氣體箱250的中央通道254分配前驅物。在實施例中，降低的環形部分266亦可為阻擋板260提供結構剛性，並且可界定第二空間258的側面或外徑。阻擋板260亦可從上方界定空間258的頂部，而空間258的底部可由面板270從下方界定。
面板270可包含：第一表面272和與第一表面272相對的第二表面274。面板270可與阻擋板260相耦接於第一表面272處，該第一表面可與阻擋板260的降低的環形部分266接合。面板270可界定在第二表面274的內部處的突出部分273，該突出部分延伸到至少部分地界定在面板270內或至少部分地由面板270來界定的第三空間275。舉例而言，面板270可界定第三空間275的側面或外徑，以及從上方界定空間275的頂部，而離子抑制元件280可從下方界定第三空間275。面板270可界定：穿過面板的複數個通道(儘管在第2圖中未示例說明)。
離子抑制元件280可被設置在面板270的第二表面274的附近處，並且可與面板270耦接於第二表面274處。離子抑制元件280可經配置以減少離子遷移至容納基板的腔室205的處理區域的情況。離子抑制元件280可界定：穿過結構的複數個孔(儘管在第2圖中未示例說明)。在實施例中，氣體箱250、阻擋板260、面板270及離子抑制 元件280可耦接在一起，並且在實施例中可直接地耦接在一起。藉由直接地耦接組件，由加熱器248產生的熱可經由組件來傳導以維持特定的腔室溫度，該腔室溫度可利用在組件之間的較小的變化來維持。離子抑制元件280亦可接觸蓋間隔件290，該離子抑制元件和該蓋間隔件可以一起至少部分地界定一電漿處理區域，其中基板在處理期間被保持在該電漿處理區域中。
第3圖圖示根據本技術的一些實施例的隔離器215的示意性的部分的底部平面圖。如同先前論述者，隔離器215可界定：從隔離器215的中央通道213延伸至隔離器215的第二端212的複數個孔214。孔214可圍繞通過隔離器215的中心軸分佈，並且可相對於通過隔離器215的中心軸等距離地分佈。隔離器215可界定任何數目的孔214，該等孔可增加流動通過隔離器215的前驅物的移動、分佈及/或湍流。
第4圖圖示根據本技術的實施例的適配器220的示意性的部分的俯視圖。如同先前描述者，第一中央通道219可從適配器220的第一端217延伸，且可部分地穿過該適配器延伸。該適配器可界定中央通道的底部，該底部可具有圓柱形的輪廓，且可過渡至朝向第二端延伸通過適配器的複數個孔(如同在前文中論述者)。類似於孔214，孔225可圍繞通過適配器220的中心軸分佈，且可圍繞中心軸等距離地設置。適配器220可界定：通過適配器的任何數目的孔，且在一些實施例中可界定比在隔離器215中更多的 孔。額外的孔可以增加與加入的前驅物的混合。如同先前所述者，混合通道可將額外的前驅物朝向適配器的第一端傳遞，並且傳遞至第一中央通道219。在此實施例中，第4圖和第5圖的圖示將會反過來。
第5圖圖示根據本技術的一些實施例的通過第2圖的線段A-A的適配器220的示意性的橫截面圖。第5圖可示例說明：通過第二中央通道221的圖示，其可圖示通過先前描述的第二部分226的混合通道的出口。如同示例說明者，第二部分226可在孔225之間延伸，且可沿著適配器220的中心軸朝向適配器的第二端延伸。此外，如同在前文中所述者，在第二部分226朝向第一中央通道219延伸的實施例中，第4圖和第5圖的圖示將會反過來，並且來自遠端電漿單元的混合的前驅物和經由在適配器220中的埠口引入的前驅物將會從預混合的孔225離開。
第6圖圖示根據本技術的一些實施例的混合歧管235的示意性的透視圖。如同先前所述者，混合歧管235可界定：通過混合歧管的中央通道238，該中央通道可將混合的前驅物從適配器傳送至處理腔室。混合歧管235亦可包含：數個特徵，該等特徵允許：將可與先前混合的前驅物混合的額外的前驅物引入。如同先前描述者，一或多個埠口239可提供用於將前驅物引入混合歧管235的通路。埠口239可進入如同在第2圖中示例說明的通道，該通道可延伸至界定在混合歧管235的第一表面236中的溝槽中的一或多者。
溝槽可被界定在混合歧管235的第一表面236中，其中當混合歧管與先前論述的間隔件230耦接時，該等溝槽可形成至少部分地隔離的通道。第一溝槽240可圍繞中央通道238來形成。第一溝槽240可為環形的，且可藉由相對於通過混合歧管235的中心軸的內半徑，以及外半徑來表徵。內半徑可由第一內側壁605來界定，該第一內側壁可界定延伸穿過混合歧管235的中央通道238的頂部部分。第一溝槽240的外半徑可由第一外側壁610來界定，該第一外側壁可從第一內側壁605徑向向外定位。第一溝槽240可提供通往穿過第一內側壁605的中央通道238的流體通路。舉例而言，第一內側壁605可界定：穿過第一內側壁605的數個孔606。孔606可圍繞第一內側壁605分佈，以提供用於將額外的前驅物傳遞至中央通道238的多個進入位置。
第一內側壁605可藉由從第一表面236朝向第一溝槽240的斜面或倒角面來表徵。在實施例中，可以形成具有倒角的輪廓，該具有倒角的輪廓可沿著第一表面236保持第一內側壁605的至少一部分，該第一表面可用於與先前論述的間隔件230耦接。倒角亦可提供另外的橫向的間距以避免跨越在第一溝槽240與中央通道238之間的第一表面的洩漏。孔606可被界定為穿過倒角部分，且可以一角度(例如，以與倒角部分的平面呈現為垂直的直角，或以通過第一內側壁605的一些其他的角度)來界定。
混合歧管235可界定第二溝槽241，該第二溝槽從第一溝槽240徑向向外形成。在一些實施例中，第二溝槽241亦可為環形的，且中央通道238、第一溝槽240及第二溝槽241可圍繞通過混合歧管235的中心軸同心地對準。第二溝槽241可藉由先前描述的通道243與埠口239流體地耦接。通道243可延伸至在第二溝槽241內的一或多個位置，且可從溝槽的底部進入第二溝槽241(雖然在其他的實施例中通道243可經由溝槽的側壁進入溝槽241)。藉由從第二溝槽241的下方進入，第二溝槽241的深度可以被最小化，此可以減小形成的通道的所佔的空間，並且可以限制被傳遞的前驅物的擴散以增加傳遞的均勻性。
第二溝槽241可被界定在第一外側壁610(該第一外側壁可替代性地為第二內側壁)與外半徑(該外半徑是由混合歧管235的主體來界定)之間。在實施例中，第一外側壁610可沿著混合歧管235的第一表面236來界定第一溝槽240和第二溝槽241中的每一者。類似於第一內側壁605的輪廓，第一外側壁610亦可藉由在第一外側壁靠近第二溝槽241的一側上而沿著第一表面236的斜面或倒角面來表徵。第一外側壁610亦可界定：複數個孔608，該等孔被界定為穿過壁以提供在第二溝槽241與第一溝槽240之間的流體通路。類似於穿過第一內側壁605的孔，孔608可被界定為位於沿著第一外側壁610的任何地方(或穿過第一外側壁610)，且可被界定為穿過倒角部分。因此，經由埠口239傳遞的前驅物可流入第二溝槽241、可通過孔608 進入第一溝槽240，及可通過孔606進入中央通道238，其中前驅物可與被傳遞通過適配器220的前驅物混合。
孔608可包含：被界定為通過第一外側壁610的任何數目的孔，且孔606可包含：被界定為通過第一內側壁605的任何數目的孔。在一些實施例中，穿過每個壁的孔的數目可以不相同。舉例而言，在一些實施例中，穿過第一內側壁605的孔606的數目可大於穿過第一外側壁的孔608的數目，且在一些實施例中，孔606的數目可以是孔608的數目的兩倍或者更多。此外，孔608可相對於孔606徑向地偏移，以使得：沒有任何的孔經由從混合歧管235的中心軸延伸的半徑與任何的孔606成一直線。此類孔和通道設計可提供通過混合歧管的遞迴的流動，從而改善了將額外的前驅物傳遞至中央通道238的過程，且可經由每個孔606提供更為均勻的傳遞。混合歧管235亦可界定額外的溝槽615，該等溝槽可位於第二溝槽241的徑向向外之處，且可經配置以容納彈性元件或o形環。
第7圖圖示根據本技術的一些實施例的通過第6圖的線段B-B的混合歧管235的示意性的橫截面圖。橫截面示例說明了孔608(因為它們被界定為通過第一外側壁610以提供從第二溝槽241至第一溝槽240的流體通路)。此外，第7圖示例說明一些實施例，其中孔608經由第一外側壁彼此間隔開整個直徑。孔608的間隔也大致上相同，所以埠口239在兩個孔608之間等距離地間隔開。先前描述的 通道243可以在類似的位置處進入第二溝槽241而與每個孔608相距相同或大致上相同的距離。
第8圖圖示根據本技術的一些實施例的通過第6圖的線段C-C的混合歧管235的示意性的橫截面圖。橫截面示例說明孔606(因為它們被界定為通過第一內側壁605以提供從第一溝槽240至中央通道238的流體通路)。孔606和孔608可分別地延伸通過第一內側壁和第一外側壁的倒角部分，並且可以垂直於倒角的角度的一角度，或以一些其他的傾斜角度來延伸。藉由包含通過例如為第一外側壁610的特徵的傾斜角度，傳遞可提供在前驅物上升以流動通過下一組的孔之前進一步地分配前驅物的流動。此也可能限制形成孔，或以其他的方式損壞第一表面236的機械加工效果。混合歧管235可提供一種設計，該設計提供前驅物與延伸通過中央通道238的一或多個前驅物的更為均勻的混合。
如同先前解釋者，用於併入多個前驅物的組件可包含：一或多個擋板(例如，在前文中描述的第一擋板229和/或第二擋板249)。被傳遞通過系統的前驅物可以在相對較低的壓力下傳遞，前述者可以在層流中提供前驅物。此可以減少當傳遞前驅物時的混合，前述者可能會影響在基板級別執行的製程。舉例而言，在沒有充分地混合前驅物以提供所有的前驅物的均勻的傳遞的情況下，則可能無法在整個基板上均勻地發生蝕刻、沉積，或其他的製程。因此，一些實施例可包含一或多個擋板以促進前驅物的混 合，而使得所提供的材料在其進入處理腔室時更均勻地分佈。
然而，併入額外的組件可能會影響通過系統的壓力降，此可能會影響在遠端電漿單元中的電漿產生。舉例而言，在腔室中的處理條件可經配置以在相對較低的壓力下(例如，低於或大約50Torr)操作，且可經配置以在低於或大約30Torr、低於或大約20Torr、低於或大約10Torr、低於或大約5Torr、低於或大約3Torr，或更低的壓力下操作。向上移動通過腔室的組件和遠端電漿單元堆疊可能會增加在遠端電漿單元處的壓力，其中每個組件可能會增加額外的壓力降。因此，在遠端電漿單元處的壓力可能高於在腔室中的操作壓力。
當在單元處的操作條件低於特定的臨界壓力時，遠端電漿單元可進行操作以引燃電漿，其中該壓力可為在前文中的識別的壓力中的任何者，或低於包含在前文中的範圍中的任何者中的任何的特定的壓力。若在處理區域與電漿單元之間併入太多的組件，在組件群更上方之處壓力可能更高，並且在某些情況下，由於高於臨界值的壓力的緣故，可能不會產生電漿。儘管在某些情況下可在處理區域內減低操作壓力以適應此種影響，但是進一步地減低腔室壓力可能會對於製程操作產生不利的影響。在一些配置中，根據與腔室一起操作的泵送系統，減低腔室壓力可能不可行。因此，根據本技術的一些實施例的擋板可經配置以產生跨越擋板的低於5Torr或大約5Torr的壓力降，同 時增加前驅物的混合，且在一些實施例中可經配置以產生低於3Torr(或大約3Torr)、低於2Torr(或大約2Torr)、低於1Torr(或大約1Torr)、低於0.5Torr(或大約0.5Torr)，或在一些實施例中更低的壓力降。
為了要促進混合，同時將在整個擋板上的壓力影響最小化，根據本技術的一些實施例的擋板可藉由一或多個孔輪廓來表徵。舉例而言，根據本技術的實施例的擋板可界定：穿過板的一或多個孔，並且實際上可包含：可增加前驅物的停留時間，或產生一定量的混合，同時限制在整個板上的壓力降，或基於系統配置將壓力降保持在臨界值以下，而將在遠端電漿單元處的壓力保持在可能形成電漿的臨界值以下的任何的孔輪廓。
根據本技術的一些實施例的系統可包含：一或多個擋板，該等擋板可包含：如同先前示例說明的二個擋板。擋板的數目和板的孔輪廓可由以下所述者來決定：跨越堆疊的組成的組件的總壓力降，以及由當使用時該等板中的一者或二者所產生的影響。舉例而言，擋板或板可將在混合歧管處或在腔室入口處的前驅物分佈的不均勻性減低至小於10%(或大約10%)，且在一些實施例中可將不均勻性減低至小於9%(或大約9%)、小於8%(或大約8%)、小於7%(或大約7%)、小於6%(或大約6%)、小於5%(或大約5%)、小於4%(或大約4%)、小於3%(或大約3%)、小於2%(或大約2%)、小於1%(或大約1%)，或更小，其中不 均勻性為零的情況可能與前驅物的完全的均勻的混合相關。
由本技術所涵蓋的示例性的系統可包含：第一擋板或第二擋板中的任一個，以及在一些實施例中該系統可包含：第一擋板或第二擋板中的二者。當包含兩個擋板時，板可藉由相同或不同的孔輪廓和/或材料來表徵。舉例而言，擋板中的任一個或二者可由先前所述的任何的材料製成，該等材料包含：一或多個金屬(該等金屬包含塗覆的金屬(例如，鎳-塗覆的鋁)，或陶瓷。可使用任何的其他的材料，該等材料可對於被傳遞的前驅物中的一或多個具有抵抗性。此外，擋板可由與組件相類似或不同的材料製成，其中擋板嵌入於該組件中。舉例而言，第一擋板229可使用與適配器220相同或不同的材料，且第二擋板249可使用與混合歧管235相同或不同的材料。
類似地，任一個擋板可藉由任何的數目的孔輪廓來表徵，該等孔輪廓可執行一或多種作用(例如，增加前驅物的停留時間、使得前驅物流動通過特定的樣式，或引起前驅物的特定的移動)。此些態樣中的任何者可增加前驅物的混合以減低混合物的不均勻性。在一些實施例中，一個或兩個擋板可為(或可包含)：多孔介質，其中在該多孔介質中不存在任何的特定的孔輪廓，但是多孔介質可以使得停留時間增加，此可使得混合得到改善。該介質可具有一孔隙率，該孔隙率被配置成致使預先決定的壓力降增加，此 可以改善混合，同時將在遠端電漿單元處的壓力降保持在臨界值以下而點燃電漿。
任一個擋板可包含：從第一表面界定的一或多個孔，該第一表面可為上游表面，其通過與第一表面相對的第二表面，且該第二表面可為下游表面。擋板可具有在整個擋板上分佈的一或多個孔。舉例而言，任何的擋板可包含：被界定為穿過擋板的一或多個大致上為圓柱形的孔，且該等孔可相似於示例說明於第3圖至第5圖中的輪廓。舉例而言，擋板可具有被界定在示例說明的樣式中的複數個孔，該等孔可與相鄰的組件的鄰近的樣式對準，或可利用不同的樣式來引起阻塞，從而可以促進混合。此外，孔可形成有任何其他的輪廓(例如，在第9圖中示例說明者)。第9A圖至第9D圖圖示根據本技術的一些實施例的示例性的擋板900的示意性的平面圖。應理解到示例說明的孔輪廓並非意欲限制根據本技術的實施例的擋板，而是僅意欲圖示由本技術涵蓋的各種孔輪廓中的一些者。
第9A圖和第9B圖示例說明：藉由三角形的輪廓來表徵的孔，該等三角形的輪廓具有圓角以促進製造。該兩個圖像意欲示例說明：在示例性的擋板中的孔可被設置為在通過擋板的中心軸附近(例如，第9B圖中的孔920)，以及從中心軸徑向向外(例如，利用第9A圖的孔910來示例說明)。應理解到類似地涵蓋了任何的其他的孔形狀，其中包含了圓形的孔輪廓、淚滴狀的孔輪廓，或任何的其他的可製造的孔輪廓。因此，利用示例說明於第9A圖中的輪廓， 流入擋板的前驅物可以在中心處集中，前述者可促進混合。此外，利用示例說明於第9B圖中的輪廓，流入擋板的前驅物可能會撞擊到中間的屏障，並在通過擋板之前向外擴散，此可增加停留時間和在擋板處的混合。可以選擇孔的方向以適應來自相鄰的組件的上游孔輪廓。舉例而言，利用具有徑向向外分佈的孔的上游組件，更為集中的分佈可被利用於擋板，此可以改善混合。可類似地使用上游/下游孔分佈的任何的其他的組合，此可提供改善的混合，同時限制對於壓力降的影響。如同先前所述者，儘管在圖式中分別地示例說明六個和三個孔，應理解到在本技術的實施例中可以使用任何數目的孔或孔尺寸。
擋板亦可包含：孔，該等孔可類似於穿過擋板的通道，並且可影響穿過擋板的分佈。舉例而言，第9C圖和第9D圖示例說明：孔輪廓930和940，該等孔輪廓經配置以提供一定的氣體旋轉量，該等氣體通過擋板而分佈，並且該等孔輪廓可影響通過擋板的流動。圖式圖示可以使用任何的尺寸或分佈的孔，該等孔可影響停留時間或保持特定的通過擋板的傳導。如同示例說明者，可形成通過擋板的通道，該通道從在擋板的一個表面處的入口延伸至在擋板的相對的表面處的出口。出口可相對於所顯示的入口徑向偏移，此可以引起一定的前驅物旋轉量，且可以改善組件的混合。徑向偏移可以使得垂直於擋板的表面並且延伸穿過孔的入口的中心的軸可以不穿過孔的出口的中心，並且可以依據偏移量而完全地不延伸通過出口。可以包含任何 的偏移量，其中較大的偏移可增加前驅物的旋轉量，此可增加混合。
當包含兩個擋板時，可以使用任何的兩個孔輪廓。舉例而言，一個擋板可包含：旋轉通道，而另一個擋板可包含：直孔。此外，一個擋板可包含：經配置以引起在第一方向上的旋轉的旋轉通道，而第二擋板可包含：經配置以引起在相反的方向上的旋轉的旋轉通道。可以理解到可利用任何數目的組合，並且該等組合被本技術所涵蓋。在一些實施例中，藉由包含一或多個擋板，混合的前驅物的不均勻性可被減低，並且可被大致上或實質上消除。
第10圖根據本技術的一些實施例來顯示：傳遞前驅物通過處理腔室的方法1000的操作。方法1000可在系統200中執行，並且可允許在腔室外面的改善的前驅物混合，同時保護組件以免受到蝕刻劑的損害。雖然腔室的組件可能暴露於可能隨著時間造成磨損的蝕刻劑，本技術可對於此些組件作出限制而使其成為可以更容易更換和維修的組件。舉例而言，本技術可限制遠端電漿單元的內部組件的暴露，此可允許特定的保護被應用於遠端電漿單元。
方法1000可包含以下步驟：形成含氟的前驅物的遠端電漿(在操作1005中)。前驅物可被傳遞至遠端電漿單元，而使其解離以產生電漿流出物。在實施例中，遠端電漿單元可被塗覆或內襯有可承受與含氟的流出物的接觸的氧化物或其他的材料。在實施例中，除了載氣之外，沒有任何的其他的蝕刻前驅物可被傳遞通過遠端電漿單元，此 可以保護單元而不受到損壞，並且允許調整電漿功率以提供前驅物的特定的解離，此可能對於正在執行的特定的製程是有益的。經配置以產生不同的蝕刻劑的電漿流出物的其他的實施例可以內襯有對於該前驅物或前驅物的組合可呈現惰性的不同的材料。
在操作1010處，含氟的前驅物的電漿流出物可流入與遠端電漿單元耦接的適配器。在操作1015處，含氫的前驅物可流入適配器。適配器可經配置以提供在適配器內的含氟的前驅物和含氫的前驅物的混合，以產生第一混合物(在操作1020處)，此可以通過如同先前描述的擋板來進行進一步的混合。在操作1025處，第一混合物可從適配器流入混合歧管。在操作1030處，第三前驅物可流入混合歧管。第三前驅物可包含額外的含氫的前驅物、額外的含鹵素的前驅物，或前驅物的其他的組合。混合歧管可經配置以執行第三前驅物與第一混合物的第二階段的混合，此可以產生第二混合物1035。
接續地，包含所有的三種前驅物的第二混合物可從混合歧管被傳遞至半導體處理腔室(儘管前驅物可以可選擇地通過如同在前文中描述的額外的擋板)。如同先前論述者，在別處描述的額外的元件可被使用以控制蝕刻劑的傳遞和分佈。應理解到所識別的前驅物僅為使用於所描述的腔室的適合的前驅物的實例。在整個揭露中論述的腔室和材料可被使用於任何的數目的其他的處理操作，該等處理 操作可受益於以下所述者：分離前驅物並在傳遞至處理腔室之前將該等前驅物混合。
在前面的描述中，為了達到解釋的目的，已經闡述了許多的細節，以為了提供本技術的各種實施例的理解。然而，對於習知技藝者而言將為顯而易的是，可以在沒有此些細節中的一些者或具有額外的細節的情況下實施某些實施例。
已經揭示了數個實施例，彼些習知技藝者將認識到在不偏離實施例的精神的情況下，可以使用各種修改、替代性的構造，及等效者。此外，為了避免不必要地混淆本技術，沒有描述許多的習知的製程和元件。因此，前文的描述不應被認為是限制技術的範疇。
在提供一數值範圍的情況下，應理解的是，除非上下文另外明確地指出，在此範圍的上限與下限之間的每個中間值至下限單位的最小分數亦被特定地揭示。將在陳述的範圍中的任何的陳述的數值或未陳述的中間值與在該陳述的範圍中的任何其他的陳述的數值或未陳述的中間值之間的任何的較窄的範圍涵蓋在內。彼些較小的範圍的上限和下限可以獨立地包含在範圍中，或排除在該範圍之外，並且在其較小的範圍中包含任一個限制值、不包含任何的限制值，或包含兩個限制值的每個範圍亦被涵蓋在技術內(其受到在陳述的範圍中的任何的特定排除的限制值的限制)。在陳述的範圍包含限制值中的一者或兩者的情況中， 排除彼些包含的限制值中的任一者或兩者的範圍亦包含在內。
如同在本文中和在隨附的申請專利範圍中使用者，單數形式「一(a)」、「一個(an)」及「該(the)」包含：複數引用(除非上下文另外清楚地指出)。因此，例如，對於「一層(a layer)」的引用包含：複數個此類層，及對於「該前驅物(the precursor)」的引用包含：對於彼些習知技藝者已知的一或多個前驅物和其等效者的引用等等。
此外，當在此說明書中和在後續的申請專利範圍中使用時，詞語「包含(comprise)」、「包含(comprising)」、「包含有(contain)」、「包含有(containing)」、「包括(include)」及「包括(including)」意欲指定陳述的特徵、整數、組件或操作的存在，但是它們不排除一或多個其他的特徵、整數、組件、操作、動作或組的存在或增加。
200:系統
205:處理腔室
210:遠端電漿單元
211:第一端
212:第二端
213:通道
214:孔
215:隔離器
217:第一端
218:第二端
219:中央通道
220:適配器
221:中央通道
222:埠口
223:混合通道
224:第一部分
225:孔
226:第二部分
226a:第二部分
226b:第二部分
227:溝槽
228:溝槽
229:第一擋板
230:間隔件
232:中央孔
235:混合歧管
236:第一端
237:第二端
238:中央通道
239:埠口
240:第一溝槽
241:第二溝槽
242:第一部分
243:通道
246:擴口部分
247:出口
248:加熱器
249:第二擋板
250:氣體箱
252:入口
253:第一表面
254:中央通道
255:第二表面
257:空間
258:空間
260:阻擋板
263:孔
265:凸起的環形部分
266:降低的環形部分
270:面板
272:第一表面
273:突出部分
274:第二表面
275:第三空間
280:離子抑制元件
290:蓋間隔件

Claims (19)

  1. 一種處理系統，包含：一處理腔室；一遠端電漿單元，該遠端電漿單元與該處理腔室耦接；一擋板，該擋板併入於該處理腔室與該遠端電漿單元之間；及一混合歧管，該混合歧管耦接在該遠端電漿單元與該處理腔室之間，其中該混合歧管是藉由一第一端和與該第一端相對的一第二端來表徵，其中該混合歧管與該處理腔室相耦接於該第二端處，其中該混合歧管界定穿過該混合歧管的一中央通道，其中該混合歧管沿著該混合歧管的一外部來界定一埠口，其中該埠口與界定在該混合歧管的該第一端內的一第一溝槽流體地耦接，其中該第一溝槽是藉由在一第一內側壁處的一內半徑和一外半徑來表徵，其中該第一溝槽提供通往穿過該第一內側壁的該中央通道的流體通路，且其中該擋板被設置在該混合歧管的上游處。
  2. 如請求項1所述之處理系統，其中該混合歧管進一步包含：一第二溝槽，該第二溝槽界定在該混合歧管的該第一端內，其中該第二溝槽從該第一溝槽徑向向外定位，其中該埠口與該第二溝槽流體地耦接，其中該第二溝槽是藉由在一第二內側壁處的一內半徑來表徵，其中該第二內側壁進一步界定該第一溝槽的該外半徑， 並且其中該第二內側壁界定複數個孔，該等孔被界定為穿過該第二內側壁和提供通往該第一溝槽的流體通路。
  3. 如請求項1所述之處理系統，其中該擋板是一第一擋板，且其中該處理系統進一步包含：一第二擋板，該第二擋板設置在該混合歧管的下游處。
  4. 如請求項3所述之處理系統，其中該第一擋板和該第二擋板各自界定一或多個孔，且其中該第一擋板是藉由與該第二擋板不同的一孔輪廓來表徵。
  5. 如請求項1所述之處理系統，其中該擋板界定穿過該擋板的複數個孔，其中該複數個孔中的每個孔從作為一入口的該擋板的一第一表面通過作為一出口的與該擋板的該第一表面相對的該擋板的一第二表面來界定，且其中該出口圍繞垂直於該擋板且延伸通過該入口的一軸而相對於該入口徑向地偏移以界定穿過每個孔的一旋轉通道。
  6. 如請求項1所述之處理系統，其中該擋板包含：陶瓷或塗覆的鋁。
  7. 如請求項1所述之處理系統，進一步包含：一隔離器，該隔離器被耦接在該混合歧管與該遠端電漿單元之間，其中該隔離器包含：一陶瓷。
  8. 如請求項1所述之處理系統，進一步包含：一適配器，該適配器耦接在該混合歧管與該遠端電漿單元之間。
  9. 如請求項8所述之處理系統，其中該適配器 是藉由一第一端和與該第一端相對的一第二端來表徵，其中該適配器界定一中央通道，該中央通道部分地穿過該適配器延伸，其中該適配器界定穿過該適配器的一外部的一埠口，其中該埠口與被界定在該適配器內的一混合通道流體地耦接，且其中該混合通道與該中央通道流體地耦接。
  10. 如請求項9所述之處理系統，其中該擋板位於被界定在該適配器的該第二端中的一凹部中。
  11. 如請求項8所述之處理系統，進一步包含：設置在該適配器與該混合歧管之間的一間隔件。
  12. 一種處理系統，包含：一遠端電漿單元；一處理腔室，該處理腔室包含：一氣體箱，該氣體箱界定一中央通道，一阻擋板，該阻擋板與該氣體箱耦接，其中該阻擋板界定穿過該阻擋板的複數個孔，及一面板，該面板與該阻擋板相耦接於該面板的一第一表面處；一擋板；及一混合歧管，該混合歧管與該氣體箱耦接，其中該混合歧管是藉由一第一端和與該第一端相對的一第二端來表徵，其中該混合歧管與該處理腔室相耦接於該第二端處，其中該混合歧管界定穿過該混合歧管的一中央通道，該混合歧管與被界定為穿過該氣體箱的該中央通道流體 地耦接，其中該混合歧管沿著該混合歧管的一外部界定一埠口，其中該埠口與被界定在該混合歧管的該第一端內的一第一溝槽流體地耦接，其中該第一溝槽是藉由在一第一內側壁處的一內半徑和一外半徑來表徵，其中該第一溝槽提供通往穿過該第一內側壁的該中央通道的流體通路，且其中該擋板是設置在該混合歧管的上游處的一第一擋板。
  13. 如請求項12所述之處理系統，進一步包含：一加熱器，該加熱器圍繞耦接至該氣體箱的一混合歧管而在外部耦接至該氣體箱。
  14. 如請求項12所述之處理系統，其中該處理系統進一步包含：設置在該混合歧管的下游處的一第二擋板，且位於被界定該混合歧管的該第二端中的一凹部中。
  15. 如請求項12所述之處理系統，進一步包含：一適配器，該適配器與該遠端電漿單元耦接，其中該適配器是藉由一第一端和與該第一端相對的一第二端來表徵，其中該適配器界定一中央通道，該中央通道從該第一端至該適配器的一中點部分地穿過該適配器延伸，其中該適配器界定從該適配器的該中點朝向該適配器的該第二端延伸的複數個進入通道，且其中該複數個進入通道圍繞穿過該適配器的一中心軸徑向地分佈。
  16. 如請求項15所述之處理系統，其中該適配器界定穿過該適配器的一外部的一埠口，其中該埠口與 被界定在該適配器內的一混合通道流體地耦接，且其中該混合通道穿過該適配器的一中央部分朝向該適配器的該第二端延伸。
  17. 如請求項15所述之處理系統，其中該適配器界定穿過該適配器的一外部的一埠口，其中該埠口與被界定在該適配器內的一混合通道流體地耦接，且其中該混合通道穿過該適配器的一中央部分朝向該適配器的該中點延伸以流體地進入由該適配器界定的該中央通道。
  18. 一種傳遞前驅物通過一處理系統的方法，該方法包含以下步驟：在一遠端電漿單元中形成一含氟的前驅物的一電漿；使得該含氟的前驅物的電漿流出物流入一適配器；使得一含氫的前驅物流入該適配器；將該含氫的前驅物與該電漿流出物混合以產生一第一混合物；使得該第一混合物流入一混合歧管；使得一第三前驅物流入該混合歧管；及將該第三前驅物與該第一混合物混合以產生一第二混合物，其中該第一混合物或該第二混合物中的一者流動通過一擋板。
  19. 如請求項18所述之傳遞前驅物通過該處理系統的方法，其中一第一擋板併入於該混合歧管的上游處。
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