CN113287185A - 处理腔室混合系统 - Google Patents

处理腔室混合系统 Download PDF

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CN113287185A
CN113287185A CN201980088280.7A CN201980088280A CN113287185A CN 113287185 A CN113287185 A CN 113287185A CN 201980088280 A CN201980088280 A CN 201980088280A CN 113287185 A CN113287185 A CN 113287185A
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G·萨布斯瓦米
S·沃内特
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Applied Materials Inc
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Abstract

示例性的处理系统可包含处理腔室，并且可包含远程等离子体单元，该远程等离子体单元与该处理腔室耦接。示例性的系统也可包含耦接在该远程等离子体单元与该处理腔室之间的混合歧管。该混合歧管可由第一端和与该第一端相对的第二端表征，并且可与该处理腔室在该第二端处耦接。该混合歧管可限定通过该混合歧管的中央通道，并且可限定沿着该混合歧管的外部的端口。该端口可与限定在该混合歧管的该第一端内的第一沟槽流体地耦接。该第一沟槽可由在第一内侧壁处的内半径和外半径表征，并且该第一沟槽可提供通过该第一内侧壁到该中央通道的流体通路。

Description

处理腔室混合系统
相关申请的交叉引用
本申请要求2019年1月7日提交的美国专利申请No.16/241,537的优先权的权益，其内容出于所有目的通过引用以其整体结合于此。
技术领域
本技术涉及系统、工艺及设备。更具体地，本技术涉及用于在系统和腔室内传递前驱物的系统和方法。
背景技术
通过在基板表面上产生复杂地图案化的材料层的工艺使得集成电路成为可能。在基板上产生图案化的材料需要受控制的方法以去除暴露的材料。化学蚀刻用于多种目的，包含：将光刻胶中的图案转移到下面的层、变薄的层，或使在表面上已经存在的特征的横向尺寸变薄。通常期望具有一种蚀刻工艺，该蚀刻工艺蚀刻一种材料快于蚀刻另一种材料，以促进(例如)图案转移工艺或单个材料的去除。据说这种蚀刻工艺对于第一种材料是具有选择性的。由于材料、电路及工艺的多样性，已经开发出对各种材料具有选择性的蚀刻工艺。
基于在工艺中使用的材料，蚀刻工艺可被称为湿式或干式。湿式HF蚀刻相较于其他的电介质和材料优选地去除二氧化硅(silicon oxide)。然而，湿式工艺可能难以穿透某些受到限制的沟槽，并且有时候也可能会使得其余的材料变形。干式蚀刻工艺可能渗透至复杂的特征和沟槽，但是可能无法提供可接受的自上至下的轮廓。随着在下一代的装置中装置尺寸持续地缩小，系统将前驱物传递至腔室并通过腔室的方式可能会产生越来越大的影响。随着处理条件的一致性的重要性持续地提高，腔室设计和系统设置可能针对于产生的装置的质量扮演重要的角色。
因此，需要可被使用以产生高质量的装置和结构的改进的系统和方法。这些和其他的需求通过本技术来解决。
发明内容
示例性的处理系统可包含处理腔室，并且可包含：远程等离子体单元，所述远程等离子体单元与所述处理腔室耦接。系统可包含并入于所述处理腔室与所述远程等离子体单元之间的挡板。示例性的系统也可包含混合歧管，所述混合歧管耦接在所述远程等离子体单元与所述处理腔室之间。所述混合歧管可由第一端和与所述第一端相对的第二端表征，并且可与所述处理腔室在所述第二端处耦接。所述混合歧管可限定通过所述混合歧管的中央通道，并且可限定沿着所述混合歧管的外部的端口。所述端口可与限定在所述混合歧管的所述第一端内的第一沟槽流体地耦接。所述第一沟槽可由在第一内侧壁处的内半径和外半径表征，并且所述第一沟槽可提供通过所述第一内侧壁到所述中央通道的流体通路。
在一些实施例中，所述混合歧管也可包含第二沟槽，所述第二沟槽被限定在所述混合歧管的所述第一端内。所述第二沟槽可从所述第一沟槽径向向外定位，所述端口可与所述第二沟槽流体地耦接，并且所述第二沟槽可由在第二内侧壁处的内半径表征。所述第二内侧壁也可限定所述第一沟槽的外半径，并且所述第二内侧壁可限定多个孔，所述孔被限定为通过所述第二内侧壁并且提供通往所述第一沟槽的流体通路。所述挡板可被定位在所述混合歧管的上游处。所述挡板可以是第一挡板，并且所述处理系统也可包含第二挡板，所述第二挡板被定位在所述混合歧管的下游处。所述第一挡板和所述第二挡板各自可限定一个或多个孔，并且所述第一挡板可由与所述第二挡板不同的孔轮廓表征。
所述挡板可限定通过所述挡板的多个孔。所述多个孔中的每个孔可被限定为从所述挡板的第一表面作为入口通过与所述挡板的所述第一表面相对的所述挡板的第二表面作为出口。所述出口可围绕垂直于所述挡板且延伸通过所述入口的轴而相对于所述入口径向地偏移以限定通过每个孔的旋转通道。所述挡板可包含陶瓷或经涂覆的铝。所述系统也可包含隔离器，所述隔离器耦接在所述混合歧管与所述远程等离子体单元之间。所述隔离器可以是陶瓷或包含陶瓷。所述系统也可包含适配器，所述适配器被耦接在所述混合歧管与所述远程等离子体单元之间。所述适配器可由第一端和与所述第一端相对的第二端表征。所述适配器可限定中央通道，所述中央通道部分地通过所述适配器延伸。所述适配器可限定通过所述适配器的外部的端口。所述端口可与被限定在所述适配器内的混合通道流体地耦接，并且所述混合通道可与所述中央通道流体地耦接。所述挡板可被安置在被限定在所述适配器的所述第二端中的凹部中。所述系统也可包含定位在所述适配器与所述混合歧管之间的间隔件。
本技术的一些实施例可涵盖处理系统。所述处理系统可包含远程等离子体单元。所述系统可包含处理腔室，所述处理腔室可包含气体箱，所述气体箱限定中央通道和阻挡板，所述阻挡板与所述气体箱耦接。所述阻挡板可限定通过所述阻挡板的多个孔。所述腔室也可包含面板，所述面板与所述阻挡板在面板的第一表面处耦接。所述腔室可包含挡板。所述系统也可包含混合歧管，所述混合歧管与所述气体箱耦接。所述混合歧管可由第一端和与所述第一端相对的第二端表征。所述混合歧管可与所述处理腔室在所述第二端处耦接。所述混合歧管可限定通过所述混合歧管的中央通道，所述混合歧管的中央通道与被限定为通过所述气体箱的所述中央通道流体地耦接。所述混合歧管可限定沿着所述混合歧管的外部的端口。所述端口可与被限定在所述混合歧管的所述第一端内的第一沟槽流体地耦接。所述第一沟槽可由在第一内侧壁处的内半径和外半径来表征，并且所述第一沟槽可提供通过所述第一内侧壁到所述中央通道的流体通路。
在一些实施例中，所述系统也可包含加热器，所述加热器围绕耦接至所述气体箱的混合歧管而在外部耦接至所述气体箱。所述挡板可以是第一挡板，所述第一挡板定位在所述混合歧管的上游处。所述处理系统也可包含第二挡板，所述第二挡板被定位在所述混合歧管的下游处，并且被安置在被限定在所述混合歧管的所述第二端中的凹部中。所述系统也可包含适配器，所述适配器与所述远程等离子体单元相耦接。所述适配器可由第一端和与所述第一端相对的第二端来表征。所述适配器可限定中央通道，所述中央通道从所述第一端通过所述适配器部分地延伸至所述适配器的中点。所述适配器可限定多个进入通道，所述进入通道从所述适配器的所述中点朝向所述适配器的所述第二端延伸，并且所述多个进入通道可围绕通过所述适配器的中心轴径向地分布。所述适配器可限定通过所述适配器的外部的端口。所述端口可与被限定在所述适配器内的混合通道流体地耦接。所述混合通道可通过所述适配器的中央部分朝向所述适配器的所述第二端延伸。所述适配器可限定通过所述适配器的外部的端口。所述端口可与被限定在所述适配器内的混合通道流体地耦接。所述混合通道可通过所述适配器的中央部分朝向所述适配器的所述中点延伸以流体地进入由所述适配器限定的所述中央通道。
本技术的一些实施例也可涵盖将前驱物传递通过处理系统的方法。所述方法可包含在远程等离子体单元中形成含氟的前驱物的等离子体。所述方法可包含使得所述含氟的前驱物的等离子体流出物流入适配器。所述方法可包含使得含氢的前驱物流入所述适配器。所述方法可包含将含氢的前驱物与等离子体流出物混合以产生第一混合物。所述方法可包含使得所述第一混合物流入混合歧管。所述方法可包含使得第三前驱物流入所述混合歧管。所述方法也可包含将所述第三前驱物与所述第一混合物混合以产生第二混合物。可使得所述第一混合物或所述第二混合物中的一者流动通过挡板。在一些实施例中，第一挡板可被并入于所述混合歧管的上游处。
此种技术可提供相对于传统的系统和技术的许多好处。举例而言，与传统的设计相比，本技术可利用有限数量的组件。此外，通过利用在腔室外部产生蚀刻剂物质并且控制对于腔室进行的传递的组件，可以比传统的系统更为均匀地提供混合和对于基板的传递。结合下文的描述和随附的附图更为详细地描述这些和其他的实施例以及它们的优点和特征中的许多者。
附图说明
可通过参照说明书的其余的部分和附图来实现对于所公开的技术的本质和优点的进一步的理解。
图1图示根据本技术的一些实施例的示例性的处理系统的俯视图。
图2图示根据本技术的一些实施例的示例性的处理腔室的示意性的横截面图。
图3图示根据本技术的一些实施例的隔离器的示意性的部分仰视图。
图4图示根据本技术的一些实施例的适配器的示意性的部分俯视图。
图5图示根据本技术的一些实施例的通过图2的线段A-A的适配器的示意性的横截面图。
图6图示根据本技术的一些实施例的混合歧管的示意性的透视图。
图7图示根据本技术的一些实施例的通过图6的线段B-B的混合歧管的示意性的横截面图。
图8图示根据本技术的一些实施例的通过图6的线段C-C的混合歧管的示意性的横截面图。
图9A至图9D图示根据本技术的一些实施例的示例性的挡板的示意性的平面图。
图10图示根据本技术的一些实施例的传递前驱物通过处理系统的方法的操作。
附图中的一些作为示意图被包含在内。应理解附图是用于达到示例说明性的目的，而不应被认为是按照比例绘制的(除非特别说明是按比例绘制的)。此外，作为示意图，附图被提供以帮助理解，并且相较于实际的表示可能不包含所有的方面或信息，且可能包含放大的材料以达到示例说明性的目的。
在随附的附图中，类似的组件和/或特征可具有相同的附图标记。此外，相同类型的各个组件可以通过在附图标记后面加上一个字母来加以区别(其中该字母在类似的组件之间作出区别)。若在说明书中仅使用最前面的附图标记，则该描述适用于具有相同的最前面的附图标记的类似的组件中的任何一个，而与字母无关。
具体实施方式
本技术包含用于执行半导体制造操作的半导体处理系统、腔室及组件。在半导体制造期间执行的许多的干式蚀刻操作可能涉及到多个前驱物。当以各种方式激励和进行组合时，这些蚀刻剂可被传递至基板以去除或修改基板的方面。传统的处理系统可以以多种方式来提供前驱物以(例如)用于沉积或蚀刻。提供增强的前驱物的一种方式是在传递前驱物通过处理腔室并到达基板(例如，晶片)来进行处理之前，通过远程等离子体单元提供所有的前驱物。然而，这种工艺的问题是不同的前驱物可能与不同的材料反应，这可能导致远程等离子体单元或传递前驱物的组件受到损坏。举例而言，增强的含氟的前驱物可以与铝表面反应，但是可不与氧化物表面反应。增强的含氢的前驱物可不与在远程等离子体单元内的铝表面反应，但是可与氧化物涂层反应并去除氧化物涂层。因此，若两种前驱物一起被传递通过远程等离子体单元，它们可能会损坏在单元内的涂覆或内衬。此外，等离子体被点燃的功率可能通过产生的解离量来影响正在执行的工艺。举例而言，在一些工艺中，对于含氢的前驱物的高解离量可能是有益的，但是对于含氟的前驱物的低解离量可允许更受到控制的蚀刻。
传统的处理也可通过远程等离子体装置传递一种前驱物以进行等离子体处理，并且可将第二前驱物直接地传递至腔室。然而，此工艺的问题是：前驱物的混合可能是困难的、可能无法提供对于蚀刻剂产生的充分的控制，并且可能无法在晶片或基板处提供均匀的蚀刻剂。这可能导致：在基板的整个表面上无法均匀地执行工艺，其可能随着图案化和形成继续进行而造成装置的问题。
本技术可通过利用组件和系统来克服这些问题，该组件和系统经配置以在将前驱物传递至腔室之前混合前驱物，而仅使得一种蚀刻剂前驱物被传递通过远程等离子体单元(尽管多种前驱物也可流动通过远程等离子体单元(例如，载气或其他的蚀刻剂前驱物))。本技术可包含：进一步地混合和均质化被传递通过系统的前驱物的流动装置(例如，挡板)。特定的旁路架构可在将前驱物传递至处理腔室之前将其充分地混合，且可在将每个前驱物加入系统时提供中间的混合。如此可允许在执行均匀的工艺的同时保护远程等离子体单元。本技术的腔室也可包含：使得通过腔室的热导率最大化，并且通过以特定的方式来耦接组件以增加维修的容易性的组件配置。
尽管其余的公开内容将常规地利用所公开的技术来识别特定的蚀刻工艺，将容易地理解到系统和方法同样地适用于在描述的腔室中可能发生的沉积和清洁工艺。因此，技术不应该被认为是被限制为仅与蚀刻工艺一起使用。本公开将在描述根据本技术的实施例的组件方面和对于此系统的变化之前，论述可与本技术一起使用以执行某些去除操作的一种可能的系统和腔室。
图1图示根据实施例的沉积、蚀刻、烘烤及固化腔室的处理系统100的一个实施例的俯视图。在附图中，一对前开式晶片传送盒(FOUP)102供应各种尺寸的基板，该基板由机械臂104接收且放置到低压保持区域106，随后再放置到基板处理腔室108a-f中的一者，该基板处理腔室108a-f被定位在串联部分109a-c中。第二机械臂110可被使用以将基板晶片从保持区域106传送至基板处理腔室108a-f并返回。每个基板处理腔室108a-f可被装配成执行一些基板处理操作，其中除了循环层沉积(CLD)、原子层沉积(ALD)、化学气相沉积(CVD)、物理气相沉积(PVD)、蚀刻、预先清洗、脱气、定向及其他的基板工艺之外，该基板处理操作包含：在本文中描述的干式蚀刻工艺。
基板处理腔室108a-f可包含：用于对于在基板晶片上的介电膜进行沉积、退火、固化和/或蚀刻的一个或多个系统组件。在一种配置中，可使用两对处理腔室(例如，108c-d和108e-f)以将电介质材料沉积在基板上，并且可使用第三对处理腔室(例如，108a-b)以蚀刻所沉积的电介质。在另一种配置中，所有的三对腔室(例如，108a-f)可经配置以蚀刻在基板上的介电膜。所描述的工艺中的任何一或多个可以在与不同的实施例中图示的制造系统分离的(多个)腔室中进行。将理解到的是：系统100考虑到用于介电膜的沉积、蚀刻、退火及固化腔室的额外的配置。
图2图示根据本技术的实施例的示例性的处理系统200的示意性的横截面图。系统200可包含：处理腔室205和远程等离子体单元210。远程等离子体单元210可与具有一个或多个组件的处理腔室205耦接。远程等离子体单元210可与隔离器215、适配器220、间隔件230和混合歧管235中的一个或多个相耦接。混合歧管235可与处理腔室205的顶部耦接，并且可与处理腔室205的入口耦接。
隔离器215可与远程等离子体单元210相耦接于第一端211处，且可与适配器220相耦接于与第一端211相对的第二端212处。可通过隔离器215来限定一或多个通道。在第一端211处可限定通向通道213的开口或端口。通道213可被限定在隔离器215内的中间处，且可由在与通过隔离器215的中心轴垂直的方向上的第一横截面表面区域来表征，其中隔离器可在来自远程等离子体单元210的流的方向上。通道213的直径可以等于远程等离子体单元210的出口的直径或与远程等离子体单元210的出口的直径相同。通道213可由从第一端211至第二端212的长度来表征。通道213可延伸通过隔离器215的整个长度，或小于从第一端211至第二端212的长度的长度。举例而言，通道213可延伸小于从隔离器215的第一端211至第二端212的长度的一半的长度、通道213可延伸隔离器215的从第一端211至第二端212的长度的一半的长度、通道213可延伸多于隔离器215的从第一端211至第二端212的长度的一半的长度，或通道213可延伸隔离器215的从第一端211至第二端212的长度的大约一半的长度。
通道213可以过渡至较小的孔214，该孔214从被限定在隔离器215内的通道213的底部延伸通过第二端212。举例而言，一个此类较小的孔214被示例说明于图2中(虽然应理解到可从通道213通过隔离器215至第二端212来限定任何数目的孔214)。较小的孔可以围绕隔离器215的中心轴来分布，如将于下文中进一步地论述的。较小的孔214可由小于通道213的直径的50％的直径或通道213的直径的大约50％的直径来表征，并且可由小于通道213的直径的40％的直径或通道213的直径的大约40％的直径、小于通道213的直径的30％的直径或通道213的直径的大约30％的直径、小于通道213的直径的20％的直径或通道213的直径的大约20％的直径、小于通道213的直径的10％的直径或通道213的直径的大约10％的直径、小于通道213的直径的5％的直径或通道213的直径的大约5％的直径或小于通道213的直径的直径来表征。隔离器215也可限定：被限定在隔离器215下方的一个或多个沟槽。沟槽可以是或可包含被限定在隔离器215内的一个或多个环形的凹部以允许o形环或弹性组件的安置，o形环或弹性组件可允许与适配器220耦接。
虽然处理系统的其他的组件可以是金属或导热材料，隔离器215可以是导热性较低的材料。在一些实施例中，隔离器215可以是或包含：陶瓷、塑料或其他的绝热组件，经配置以提供在远程等离子体单元210与腔室205之间的热中断。在操作期间，远程等离子体单元210可被冷却或在相对于腔室205较低的温度操作，而腔室205可被加热或在相对于远程等离子体单元210较高的温度操作。提供陶瓷或绝热隔离器215可防止或限制在组件之间的热、电或其他的干扰。
在实施例中，适配器220可与隔离器215的第二端212耦接。适配器220可由第一端217和与第一端相对的第二端218来表征。适配器220可限定通过适配器220的部分的一个或多个中央通道。举例而言，从第一端217处开始，中央通道219或第一中央通道可至少部分地通过适配器220朝向第二端218延伸，且可延伸通过适配器220的任何的长度。类似于隔离器215的中央通道213，中央通道219可延伸小于通过适配器220的长度的一半的长度、可延伸适配器220的长度的大约一半的长度、或可延伸多于适配器220的长度的一半的长度。中央通道219可由直径表征，该直径可与通道213的直径相关、等于通道213的直径，或大致上等于通道213的直径。此外，中央通道219可由包围隔离器215的孔214(且在实施例中恰好包围孔214)的形状的直径来表征，诸如，通过由基本上类似于或等于被限定为从通过隔离器215的中心轴且延伸至每个孔214的直径的外边缘的半径来表征。举例而言，中央通道219可由圆形或椭圆形来表征，该圆形或该椭圆形由可与每个孔214的外部分相切地延伸的一个或多个直径来表征。
适配器220可以将中央通道219的底部限定在该适配器220内，该底部可限定：从中央通道219至可至少部分地延伸通过适配器220的多个孔225的过渡。过渡可发生在通过该适配器的中点处，该中点可位于沿着适配器的长度的任何的位置。举例而言，孔225可从中央通道219的底部朝向适配器220的第二端218延伸，且可完全地延伸通过第二端218。在其他的实施例中，孔225可从进入中央通道219的第一端延伸通过适配器220的中间部分至进入第二中央通道221的第二端，该第二中央通道可延伸通过适配器220的第二端218。中央通道221可由类似于中央通道219的直径来表征，且在其他的实施例中，中央通道221的直径可大于或小于中央通道219的直径。孔225可由小于中央通道219的直径的50％的直径或中央通道219的直径的大约50％的直径来表征，且可由小于中央通道219的直径的40％的直径或中央通道219的直径的大约40％的直径、小于中央通道219的直径的30％的直径(或中央通道219的直径的大约30％的直径)、小于中央通道219的直径的20％的直径或中央通道219的直径的大约20％的直径、小于中央通道219的直径的10％的直径或中央通道219的直径的大约10％的直径、小于中央通道219的直径的5％的直径或中央通道219的直径的大约5％的直径、或小于中央通道219的直径的直径来表征。
适配器220可限定通过适配器220的外部(例如，沿着适配器220的侧壁或侧部)的端口222。端口222可提供用于传递第一混合前驱物的通路，该第一混合前驱物将与从远程等离子体单元210提供的前驱物进行混合。端口222可提供通往混合通道223的流体通路，混合通道223可至少部分地通过适配器220朝向适配器220的中心轴延伸。混合通道223可以以任何的角度延伸至适配器220内，且在一些实施例中，混合通道223的第一部分224可垂直于通过适配器220的中心轴且延着流动方向延伸(尽管第一部分224可朝向通过适配器220的中心轴且以倾斜的角度或下倾的角度来前进)。第一部分224可跨过孔225，该孔225可围绕适配器220的中心轴分布(类似于在上文中描述的隔离器215的孔214)。通过此分布，第一部分224可朝向适配器220的中心轴延伸经过孔225，而不与孔225相交或交叉。
混合通道223的第一部分224可过渡至混合通道223的第二部分226，该第二部分226可垂直地穿过适配器220。在一些实施例中，第二部分226可沿着通过适配器220的中心轴延伸并与该中心轴轴向地对准。第二部分226也可延伸通过圆形或其他的几何形状的中间部分，该圆形或该其他的几何形状延伸通过每个孔225的中心轴。第二部分226可与孔225一起延伸至第二中央通道221且与第二中央通道221流体地耦接。因此，在一些实施例中，被传递通过端口222的前驱物可与被传递通过远程等离子体单元210的前驱物在适配器220的下部分内混合。这可以构成在远程等离子体单元210与处理腔室205之间的组件内的第一阶段的混合。
在图2中附加地示例说明的是可替代性的实施例，其中混合通道223的第二部分226在相反的方向上垂直地延伸。举例而言，如上所述，第二部分226a可朝向第二中央通道221垂直地延伸以在此区域内混合。替代地，第二部分226可朝向第一中央通道219垂直地延伸。尽管以隐藏的视图来示例说明，第二部分226b被示例说明为单独的实施例，并且应理解到根据本技术的适配器可包含朝向适配器220的第一端217或第二端218延伸的第二部分226的任何的版本。当在朝着第一中央通道219的方向上进行传递时，被传递通过端口222的第二前驱物的混合可发生在适配器220的第一部分内，并且可通过使得被传递通过端口222的前驱物与从远程等离子体单元210传递的前驱物一起流动通过多个孔225来提供改善的均匀性。当朝向第二中央通道221传递时，由于前驱物的流动的缘故，可能会发生不太完全的混合，这可能会增加被传递通过中央通道221的前驱物的中央浓度。当朝向第一中央通道219传递时，通过端口222的前驱物可在第一中央通道内径向地分布，并且更为均匀地行进通过孔225，因为来自远程等离子体单元210的向下流动和/或通过腔室的压力的缘故而迫使前驱物更为均匀地行进通过孔。
适配器220可由与隔离器215相类似的或不同的材料制成。在一些实施例中，虽然隔离器可包含陶瓷或绝缘材料，适配器220可由铝制成或在一或多个表面上包含铝(其中包含铝的氧化物、经处理过的铝)或某些其他的材料。举例而言，适配器220的内表面可以涂覆有一种或多种材料以保护适配器220免受可能由来自远程等离子体单元210的等离子体流出物所造成的损坏。适配器220的内表面可以用对于氟的等离子体流出物可以呈现惰性的一系列的材料来进行阳极氧化处理(anodized)，并且该材料可包含(例如)氧化钇或钛酸钡。适配器220也可限定沟槽227和228，其中该沟槽可以是环形的沟槽，并且可经配置以容纳o形环或其他的密封组件。
适配器220的第二端218可限定延伸至适配器的凹部，并且第一挡板229可位于该凹部内。第一挡板229可以可选择地被包含在一些系统配置中，并且可提供流动通过适配器220的第一前驱物和第二前驱物的改善的混合。第一挡板229可限定前驱物可流动通过其中的一个或多个孔或通道，该一个或多个孔或通道可增加前驱物的混合的均匀性。第一挡板229将在下文中更为详细地描述。
与适配器220耦接的可以是间隔件230。间隔件230可以是或包含陶瓷，且可以是与在实施例中的隔离器215或适配器220相类似的材料。间隔件230可限定通过间隔件230的中央孔232。中央孔232可由从靠近适配器220的第二中央通道221的部分通过间隔件230至间隔件230的相对侧的锥形形状来表征。中央孔232的靠近第二中央通道221的部分可由等于或类似于第二中央通道221的直径的直径来表征。在实施例中，中央孔232可由沿着间隔件230的长度的大于或大约10％的锥度的百分比来表征，并且可由大于或大约20％、大于或大约30％、大于或大约40％、大于或大约50％、大于或大约60％、大于或大约70％、大于或大约80％、大于或大约90％、大于或大约100％、大于或大约150％、大于或大约200％、大于或大约300％，或更大的锥度的百分比来表征。
混合歧管235可与间隔件230耦接于第一端236或第一表面处，且可与腔室205耦接于与第一端236相对的第二端237处。混合歧管235可限定中央通道238，该中央通道可从第一端236延伸至第二端237，且可经配置以将前驱物传递至处理腔室205。混合歧管235也可经配置以将附加的前驱物与从适配器220传递的混合的前驱物合并。混合歧管可提供在系统内的第二阶段的混合。混合歧管235可沿着混合歧管235的外部(例如，沿着混合歧管235的一侧或侧壁)限定端口239。在一些实施例中混合歧管235可限定在混合歧管235的相对侧上的多个端口239以提供用于将前驱物传递至系统的附加的通路。混合歧管235也可限定在混合歧管235的第一表面236内的一个或多个沟槽。举例而言，混合歧管235可限定第一沟槽240和第二沟槽241，该第一沟槽和该第二沟槽可提供从端口239至中央通道238的流体通路。举例而言，端口239可提供通往通道243的通路，该通道可提供(例如，从如同示例说明的沟槽的下方)通往一个或两个沟槽的流体通路。在下文中将进一步详细地描述沟槽240、241。
中央通道238可由从第一端236延伸至扩口部分246的第一部分242来表征。第一部分242可由圆柱形的轮廓来表征，并且可由类似于或等于间隔件230的中央孔232的出口的直径来表征。在实施例中，扩口部分246可由大于或大约10％、大于或大约20％、大于或大约30％、大于或大约40％、大于或大约50％、大于或大约60％、大于或大约70％、大于或大约80％、大于或大约90％、大于或大约100％、大于或大约150％、大于或大约200％、大于或大约300％，或更大的扩口的百分比来表征。在实施例中，混合歧管235可由与适配器220相类似或不同的材料制成。举例而言，混合歧管235可包含镍，其可提供对于所有可能接触混合歧管的部分的前驱物的足够的保护。与传统的技术不同，因为氟等离子体流出物可能已经在混合歧管的上游处进行了混合，所以可能不会发生与重新组合有关的问题。举例而言，在不希望受到任何的特定的理论约束的情况下，镍可催化氟自由基重新组合为双原子氟，这可能会导致在传统的技术中的多晶硅损耗。当氟流出物在传递至镍、镀镍或涂覆镍的组件之前进行混合时，该过程可能会受到限制(因为可能会降低氟流出物的浓度，从而进一步地保护处于基板级别的多晶硅特征)。
扩口部分246可为经由出口247通过第二端237而被传递通过混合歧管235的前驱物提供出口。通过混合歧管235的中央通道238的部分可经配置以在将混合的前驱物提供至腔室205之前提供被传递至混合歧管的前驱物的充分或彻底的混合。与传统的技术不同，通过在传递至腔室之前进行蚀刻剂或前驱物的混合，本系统可提供在围绕腔室和基板分布之前具有均匀的特性的蚀刻剂。此外，通过提供多个阶段的混合，可对于前驱物中的每一者提供更具有均匀性的混合。使用此方式，利用本技术执行的工艺可具有在整个基板表面上的更为均匀的结果。所示例说明的组件的堆叠也可通过减少包含在堆叠中的弹性密封件的数目来限制颗粒的积聚，该弹性密封件可能随着时间推移而退化，并产生可能会影响正在执行的工艺的颗粒。
类似于先前描述的第一挡板229，本技术的一些实施例可以可选择地包含第二挡板249，其中当第二挡板被包含时，其可与第一挡板229一起被包含，或代替第一挡板229。混合歧管235的第二端237可限定延伸至混合歧管的凹部，且第二挡板249可被安置在凹部内。第二挡板249可以可选地被包含在一些系统配置中，并且可提供第三前驱物与流动通过混合歧管235的第一前驱物和第二前驱物的混合物的改善的混合。当仅包含两个主要前驱物时，第二挡板249也可进一步将第二前驱物与第一前驱物混合，其中该两个主要前驱物也可包含附加的载气或其他的材料。第二挡板249可限定前驱物可流动通过其中的一个或多个孔或通道，该孔或通道可增加前驱物的混合的均匀性。在下文中将更详细地描述第二挡板249。
腔室205可包含堆叠布置的数个组件。腔室堆叠可包含：气体箱250、阻挡板260、面板270、可选的离子抑制组件280以及盖间隔件290。组件可被利用以分配通过腔室的前驱物或一组前驱物以将蚀刻剂或其他的前驱物均匀地传递至基板以进行处理。在实施例中，这些组件可以是堆叠的板，堆叠的板中的每一个至少部分地限定腔室205的外部。
气体箱250可限定腔室入口252。中央通道254可被限定为通过气体箱250以将前驱物传递至腔室205。入口252可与混合歧管235的出口247对准。在实施例中，入口252和/或中央通道254可由类似的直径来表征。中央通道254可延伸通过气体箱250，且经配置以将一种或多种前驱物传递至由气体箱250从上方限定的容积257。气体箱250可包含第一表面253(例如，顶表面)以及与第一表面253相对的第二表面255(例如，气体箱250的底表面)。在实施例中，顶表面253可以是平面或基本上平面的表面。与顶表面253耦接的可以是加热器248。
在实施例中，加热器248可经配置以加热腔室205，并且可传导性地加热每个盖堆叠组件。加热器248可以是任何种类的加热器，包含：流体加热器、电加热器、微波加热器或经配置以将热传导性地传递至腔室205的其他的装置。在一些实施例中，加热器248可以是或可包含：围绕气体箱250的第一表面253且以环形图案形成的电加热器。加热器可跨越气体箱250，并且围绕混合歧管235来限定。加热器可以是板加热器或电阻元件加热器，其可经配置以提供高达2,000W、大约2,000W，或大于大约2,000W的热，并且可经配置以提供大于或大约2,500W、大于或大约3,000W、大于或大约3,500W、大于或大约4,000W、大于或大约4,500W、大于或大约5,000W，或更多的热。
在实施例中，加热器248可经配置以产生高达50℃、大约50℃，或大于大约50℃的可变的腔室组件温度，并且可经配置以产生大于或大约75℃、大于或大约100℃、大于或大约150℃、大于或大约200℃、大于或大约250℃、大于或大约300℃或更高的腔室组件温度。加热器248可经配置以将个别的组件(例如，离子抑制组件280)的温度升高至这些温度中的任何一者以促进处理操作(例如，退火)。在一些处理操作中，可以将基板朝向离子抑制组件280升高以进行退火操作，并且可以调整加热器248以将加热器的温度传导性地升高至上文所述的任何的特定的温度，或在所述的温度的任何之内(或者之间)的任何的温度范围内。
气体箱250的第二表面255可与阻挡板260耦接。阻挡板260可由等于或类似于气体箱250的直径的直径来表征。阻挡板260可限定通过阻挡板260的多个孔263，其中仅示例说明孔的一种样本，该孔可允许来自容积257的前驱物(例如，蚀刻剂)的分配，并且可开始分配前驱物通过腔室205以均匀地传递至基板。虽然仅示例说明了一些孔263，应理解阻挡板260可具有限定为穿过结构的任何数目的孔263。阻挡板260可由在阻挡板260的外径处的升高的环形部分265以及在阻挡板260的外径处的降低的环形部分266来表征。在实施例中，升高的环形部分265可为阻挡板260提供结构刚性，并且可限定容积257的侧面和外径。阻挡板260也可从下方限定容积257的底部。容积257可允许在通过阻挡板260的孔263之前，从气体箱250的中央通道254分配前驱物。在实施例中，降低的环形部分266也可为阻挡板260提供结构刚性，并且可限定第二空间258的侧面或外径。阻挡板260也可从上方限定容积258的顶部，而容积258的底部可由面板270从下方限定。
面板270可包含第一表面272和与第一表面272相对的第二表面274。面板270可与阻挡板260相耦接于第一表面272处，该第一表面272可与阻挡板260的降低的环形部分266接合。面板270可限定在第二表面274的内部处的突出部分273，该突出部分273延伸到至少部分地限定在面板270内或至少部分地由面板270来限定的第三容积275。举例而言，面板270可限定第三容积275的侧面或外径，以及从上方限定容积275的顶部，而离子抑制组件280可从下方限定第三容积275。面板270可限定通过面板的多个通道(尽管在图2中未示例说明)。
离子抑制组件280可被定位在面板270的第二表面274的附近处，并且可与面板270耦接于第二表面274处。离子抑制组件280可经配置以减少离子迁移至容纳基板的腔室205的处理区域。离子抑制组件280可限定通过结构的多个孔(尽管在图2中未示例说明)。在实施例中，气体箱250、阻挡板260、面板270和离子抑制组件280可耦接在一起，并且在实施例中可直接地耦接在一起。通过直接地耦接组件，由加热器248产生的热可通过组件来传导以维持特定的腔室温度，该腔室温度可以以在组件之间的较小的变化来维持。离子抑制组件280也可接触盖间隔件290，该离子抑制组件和该盖间隔件可以一起至少部分地限定等离子体处理区域，其中基板在处理期间被保持在该等离子体处理区域中。
图3图示根据本技术的一些实施例的隔离器215的示意性的部分仰视图。如先前论述的，隔离器215可限定从隔离器215的中央通道213延伸至隔离器215的第二端212的多个孔214。孔214可围绕通过隔离器215的中心轴分布，并且可相对于通过隔离器215的中心轴等距离地分布。隔离器215可限定任何数目的孔214，该孔214可增加流动通过隔离器215的前驱物的移动、分布和/或湍流。
图4图示根据本技术的实施例的适配器220的示意性的部分俯视图。如先前描述的，第一中央通道219可从适配器220的第一端217延伸，并且可部分地通过该适配器延伸。该适配器可限定中央通道的底部，该底部可具有圆柱形的轮廓，并且可过渡至朝向第二端延伸通过适配器的多个孔225(如上所述)。类似于孔214，孔225可围绕通过适配器220的中心轴分布，且可围绕中心轴等距离地定位。适配器220可限定通过适配器的任何数目的孔，并且在一些实施例中可限定比在隔离器215中更多的孔。附加的孔可以增加与加入的前驱物的混合。如先前所述，混合通道可将附加的前驱物朝向适配器的第一端传递，并且传递至第一中央通道219。在此实施例中，图4和图5的图示将会反过来。
图5图示根据本技术的一些实施例的通过图2的线段A-A的适配器220的示意性的横截面图。图5可示例说明：通过第二中央通道221的视图，其可示出先前描述的通过第二部分226的混合通道的出口。如图所示，第二部分226可在孔225之间延伸，且可沿着适配器220的中心轴朝向适配器的第二端延伸。此外，如上所述，在第二部分226朝向第一中央通道219延伸的实施例中，图4和图5的视图将会反过来，并且来自远程等离子体单元的混合的前驱物和通过在适配器220中的端口引入的前驱物将会预混合并且从孔225离开。
图6图示根据本技术的一些实施例的混合歧管235的示意性的透视图。如上所述，混合歧管235可限定通过混合歧管的中央通道238，该中央通道可将混合的前驱物从适配器传送至处理腔室。混合歧管235也可包含数个特征，该特征允许引入可与先前混合的前驱物混合的附加的前驱物。如先前描述的，一个或多个端口239可提供用于将前驱物引入混合歧管235的通路。端口239可进入如在图2中示例说明的可延伸至限定在混合歧管235的第一表面236中的沟槽中的一者或多者的通道。
沟槽可被限定在混合歧管235的第一表面236中，其中当混合歧管与先前论述的间隔件230耦接时，该沟槽可形成至少部分地隔离的通道。第一沟槽240可围绕中央通道238来形成。第一沟槽240可以是环形的，并且可由相对于通过混合歧管235的中心轴的内半径以及外半径来表征。内半径可由第一内侧壁605来限定，该第一内侧壁可限定延伸通过混合歧管235的中央通道238的顶部部分。第一沟槽240的外半径可由第一外侧壁610来限定，该第一外侧壁可从第一内侧壁605径向向外定位。第一沟槽240可提供通过第一内侧壁605到中央通道238的流体通路。举例而言，第一内侧壁605可限定通过第一内侧壁605的数个孔606。孔606可围绕第一内侧壁605分布，以提供用于将附加的前驱物传递至中央通道238的多个进入位置。
第一内侧壁605可由从第一表面236朝向第一沟槽240的斜面或倒角面来表征。在实施例中，可以形成具有倒角的轮廓，该具有倒角的轮廓可沿着第一表面236保持第一内侧壁605的至少一部分可用于与先前论述的间隔件230耦接。倒角也可提供进一步的横向的间距以避免跨越在第一沟槽240与中央通道238之间的第一表面的泄漏。孔606可被限定为通过倒角部分，并且可以以一个角度(例如，以与倒角部分的平面呈直角，或以通过第一内侧壁605的一些其他的角度)来限定。
混合歧管235可限定第二沟槽241，该第二沟槽从第一沟槽240径向向外形成。在一些实施例中，第二沟槽241也可以是环形的，并且中央通道238、第一沟槽240和第二沟槽241可围绕通过混合歧管235的中心轴同心地对准。第二沟槽241可经由先前描述的通道243与端口239流体地耦接。通道243可延伸至在第二沟槽241内的一个或多个位置，且可从第二沟槽的底部进入第二沟槽241(虽然在其他的实施例中通道243可通过沟槽的侧壁进入沟槽241)。通过从第二沟槽241的下方进入，第二沟槽241的深度可以被最小化，这可以减小形成的通道的空间，并且可以限制被传递的前驱物的扩散以增加传递的均匀性。
第二沟槽241可被限定在第一外侧壁610(该第一外侧壁可替代地为第二内侧壁)与外半径(该外半径由混合歧管235的主体来限定)之间。在实施例中，第一外侧壁610可沿着混合歧管235的第一表面236限定第一沟槽240和第二沟槽241中的每一者。类似于第一内侧壁605的轮廓，第一外侧壁610也可由在第一外侧壁靠近第二沟槽241的一侧上沿着第一表面236的斜面或倒角面来表征。第一外侧壁610也可限定多个孔608，该孔被限定为通过壁以提供在第二沟槽241与第一沟槽240之间的流体通路。类似于通过第一内侧壁605的孔，孔608可被限定为位于沿着第一外侧壁610或通过第一外侧壁610的任何地方，并且可被限定为通过倒角部分。因此，通过端口239传递的前驱物可流入第二沟槽241、可通过孔608进入第一沟槽240，并且可通过孔606进入中央通道238，其中前驱物可与被传递通过适配器220的前驱物混合。
孔608可包含被限定为通过第一外侧壁610的任何数目的孔，并且孔606可包含被限定为通过第一内侧壁605的任何数目的孔。在一些实施例中，通过每个壁的孔的数目可以不相等。举例而言，在一些实施例中，通过第一内侧壁605的孔606的数目可大于通过第一外侧壁的孔608的数目，并且在一些实施例中，孔606的数目可以是孔608的数目的两倍或者更多。此外，孔608可相对于孔606径向地偏移，以使得没有任何的孔经由从混合歧管235的中心轴延伸的半径与任何的孔606成一直线。此类孔和通道设计可提供通过混合歧管的递归的流动，从而改善了将附加的前驱物传递至中央通道238的过程，并且可提供通过每个孔606的更为均匀的传递。混合歧管235也可限定附加的沟槽615，该沟槽可位于第二沟槽241的径向向外处，并且可被配置以接收弹性组件或o形环。
图7图示根据本技术的一些实施例的通过图6的线段B-B的混合歧管235的示意性的横截面图。横截面示例说明了孔608，如它们被限定为通过第一外侧壁610以提供从第二沟槽241至第一沟槽240的流体通路。此外，图7示例说明一些实施例，其中孔608通过第一外侧壁彼此间隔开整个直径。孔608的间隔也大致上相同，所以端口239在两个孔608之间等距离地间隔开。先前描述的通道243可以在类似的位置处进入第二沟槽241以与每个孔608相距相同或基本上相同的距离。
图8图示根据本技术的一些实施例的通过图6的线段C-C的混合歧管235的示意性的横截面图。横截面示例说明孔606，如它们被限定为通过第一内侧壁605以提供从第一沟槽240至中央通道238的流体通路。孔606和孔608可分别地延伸通过第一内侧壁和第一外侧壁的倒角部分，并且可以以垂直于倒角的角度的角度或以一些其他的倾斜角度来延伸。通过包含通过特征(例如为第一外侧壁610)的倾斜角度，传递可提供在前驱物上升以流动通过下一组的孔之前进一步地分配前驱物的流动。这也可能限制形成孔，或以其他的方式损坏第一表面236的机械加工效果。混合歧管235可提供一种设计，该设计提供前驱物与延伸通过中央通道238的一种或多种前驱物的更为均匀的混合。
如同先前解释的，用于并入多种前驱物的组件可包含一个或多个挡板(例如，在上文中描述的第一挡板229和/或第二挡板249)。被传递通过系统的前驱物可以在相对较低的压力下传递，这可以以层流提供前驱物。这可以减少当传递前驱物时的混合，这可能会影响在基板级别执行的工艺。举例而言，在没有充分地混合前驱物以提供所有的前驱物的均匀的传递的情况下，则可能无法在整个基板上均匀地发生蚀刻、沉积，或其他工艺。因此，一些实施例可包含一个或多个挡板以促进前驱物的混合，而使得所提供的材料在其进入处理腔室时更均质地分布。
然而，并入额外的组件可能会影响通过系统的压力降，这可能会影响在远程等离子体单元中的等离子体产生。举例而言，在腔室中的处理条件可经配置以在相对较低的压力下(例如，低于或大约50Torr)操作，并且可经配置以在低于或大约30Torr、低于或大约20Torr、低于或大约10Torr、低于或大约5Torr、低于或大约3Torr，或更低的压力下操作。向上移动通过腔室的组件和远程等离子体单元堆叠可能会增加在远程等离子体单元处的压力，其中每个组件可能会增加额外的压力降。因此，在远程等离子体单元处的压力可能高于在腔室中的操作压力。
当在单元处的操作条件低于特定的阈值压力时，远程等离子体单元可操作以引燃(strike)等离子体，其中该阈值压力可以是在上文中的标识的压力中的任何一者，或低于包含在上文中的范围中的任何一者中的任何特定的压力。若在处理区域与等离子体单元之间并入太多的组件，在组件群更上方处的压力可能更高，并且在某些情况下，由于高于阈值的压力的缘故，可能不会产生等离子体。尽管在某些情况下可在处理区域内减小操作压力以适应此种影响，但是进一步地减小腔室压力可能会对于工艺操作产生不利的影响。在一些配置中，根据与腔室一起操作的泵送系统，减小腔室压力可能不可行。因此，根据本技术的一些实施例的挡板可经配置以产生跨越挡板的低于5Torr或大约5Torr的压力降，同时增加前驱物的混合，并且在一些实施例中可经配置以产生低于3Torr(或大约3Torr)、低于2Torr(或大约2Torr)、低于1Torr(或大约1Torr)、低于0.5Torr(或大约0.5Torr)，或在一些实施例中更低的压力降。
为了促进混合，同时将在整个挡板上的压力影响最小化，根据本技术的一些实施例的挡板可由一个或多个孔轮廓来表征。举例而言，根据本技术的实施例的挡板可限定通过板的一个或多个孔，并且实际上可包含：可增加前驱物的停留时间，或产生一定量的混合，同时限制在整个板上的压力降，或基于系统配置将压力降保持在临界值以下，以将在远程等离子体单元处的压力保持在可以形成等离子体的临界值以下的任何的孔轮廓。
根据本技术的一些实施例的系统可包含：一个或多个挡板，该挡板可包含如同先前示例说明的两个挡板。挡板的数目和板的孔轮廓可由以下各项决定：跨越堆叠的组成的组件的总压力降、以及当使用该板中的一个或两个时由该板中的一个或两个所产生的影响。举例而言，挡板或板可将在混合歧管处或在腔室入口处的前驱物分布的不均匀性减小至小于10％(或大约10％)，并且在一些实施例中可将不均匀性减小至小于9％(或大约9％)、小于8％(或大约8％)、小于7％(或大约7％)、小于6％(或大约6％)、小于5％(或大约5％)、小于4％(或大约4％)、小于3％(或大约3％)、小于2％(或大约2％)、小于1％(或大约1％)、或更小，其中不均匀性为零的情况可能与前驱物的完全均质的混合相关联。
由本技术所涵盖的示例性的系统可包含第一挡板或第二挡板中的任一个，以及在一些实施例中该系统可包含第一挡板或第二挡板中的二者。当包含两个挡板时，板可由相同或不同的孔轮廓和/或材料来表征。举例而言，挡板中的任一个或两者可由先前所述的任何的材料制成，该材料包含：一种或多种金属(该金属包含涂覆的金属(例如，涂覆镍的铝))，或陶瓷。可使用任何的其他的材料，该材料可对于被传递的前驱物中的一种或多种具有抵抗性。此外，挡板可由与挡板嵌入其中的组件相类似或不同的材料制成。举例而言，第一挡板229可以是与适配器220相同或不同的材料，并且第二挡板249可以是与混合歧管235相同或不同的材料。
类似地，任一个挡板可由任何数目的孔轮廓来表征，该孔轮廓可执行一种或多种作用，例如，增加前驱物的停留时间、使得前驱物流动通过特定的图案，或引起前驱物的特定的移动。这些方面中的任何一者可增加前驱物的混合以减小混合物的不均匀性。在一些实施例中，一个或两个挡板可以是(或可包含)：多孔介质，其中在该多孔介质中不存在任何的特定的孔轮廓，但是多孔介质可以使得停留时间增加，这可使得混合得到改善。该介质可具有孔隙率，该孔隙率被配置成致使预先确定的压力降增加，这可以改善混合，同时将在远程等离子体单元处的压力降保持在阈值以下以点燃等离子体。
任一个挡板可包含被限定为从第一表面通过与第一表面相对的第二表面的一个或多个孔，该第一表面可以是上游表面，并且该第二表面可以是下游表面。挡板可具有在整个挡板上分布的一个或多个孔。举例而言，任何的挡板可包含：被限定为通过挡板的一个或多个基本上为圆柱形的孔，且该孔可相似于示例说明于图3至图5中的轮廓。举例而言，挡板可具有在示例说明的图案中限定的多个孔，该孔可与相邻的组件的邻近的图案对准，或可与该图案不同来引起阻塞，从而可以促进混合。此外，可以以任何其他的轮廓(例如，在图9中示例说明的)形成孔。图9A至图9D图示根据本技术的一些实施例的示例性的挡板900的示意性的平面图。应理解示例说明的孔轮廓并非旨在限制根据本技术的实施例的挡板，而是仅旨在图示由本技术涵盖的各种孔轮廓中的一些。
图9A和图9B示例说明由三角形的轮廓来表征的孔，该三角形的轮廓具有圆角以促进制造。该两个图像旨在示例说明：在示例性的挡板中的孔可被定位在通过挡板的中心轴附近(例如，图9B中的孔920)，以及从中心轴径向向外(例如，利用图9A的孔910来示例说明)。应理解到类似地涵盖了任何的其他的孔形状，其中包含了圆形的孔轮廓、泪滴状的孔轮廓，或任何的其他的可制造的孔轮廓。因此，利用示例说明于图9A中的轮廓，流入挡板的前驱物可以在中心处集中，这可促进混合。此外，利用示例说明于图9B中的轮廓，流入挡板的前驱物可能会撞击到中间的屏障，并在通过挡板之前向外扩散，这可增加停留时间和在挡板处的混合。可以选择孔的方向以适应来自相邻的组件的上游孔轮廓。举例而言，利用具有径向向外分布的孔的上游组件，更为集中的分布可被用于挡板，这可以改善混合。可类似地使用上游/下游孔分布的任何的其他的组合，这可提供改善的混合，同时限制对于压力降的影响。如先前所述，尽管在附图中分别地示例说明六个和三个孔，应理解到在本技术的实施例中可以使用任何数目的孔或孔尺寸。
挡板也可包含：孔，该孔可类似于通过挡板的通道，并且可影响通过挡板的分布。举例而言，图9C和图9D示例说明孔轮廓930和940，该孔轮廓经配置以提供一定量的气体旋转，该气体通过挡板而分布，并且该孔轮廓可影响通过挡板的流动。附图图示可以使用任何的尺寸或分布的孔，该孔的尺寸或分布可影响停留时间或保持特定的通过挡板的传导。如图所示，可形成通过挡板的通道，该通道从在挡板的一个表面处的入口延伸至在挡板的相对的表面处的出口。如所示，出口可相对于入口径向偏移，这可以引起一定量的前驱物旋转，且可以改善组件的混合。径向偏移可以使得垂直于挡板的表面并且延伸通过孔的入口的中心的轴可以不穿过孔的出口的中心，并且可以取决于偏移量而完全地不延伸通过出口。可以包含任何量的偏移，其中较大的偏移可增加前驱物的旋转量，这可增加混合。
当包含两个挡板时，可以使用任何的两个孔轮廓。举例而言，一个挡板可包含旋转通道，而另一个挡板可包含直孔。此外，一个挡板可包含经配置以引起在第一方向上的旋转的旋转通道，而第二挡板可包含经配置以引起在相反的方向上的旋转的旋转通道。可以理解到可利用任何数目的组合，并且该组合被本技术所涵盖。通过包含一个或多个挡板，混合的前驱物的不均匀性可被减小，并且在一些实施例中可被基本上或实质上消除。
图10根据本技术的一些实施例示出将前驱物传递通过处理腔室的方法1000的操作。方法1000可在系统200中执行，并且可允许在腔室外面的改善的前驱物混合，同时保护组件免受蚀刻剂的损害。虽然腔室的组件可能暴露于可能随着时间造成磨损的蚀刻剂，本技术可对于这些组件作出限制而使其成为可以更容易更换和维修的组件。举例而言，本技术可限制远程等离子体单元的内部组件的暴露，这可允许特定的保护被应用于远程等离子体单元。
方法1000可包含在操作1005中形成含氟的前驱物的远程等离子体。前驱物可被传递至远程等离子体单元，而使其解离以产生等离子体流出物。在实施例中，远程等离子体单元可被涂覆或内衬有可承受与含氟的流出物的接触的氧化物或其他的材料。在实施例中，除了载气之外，没有其他的蚀刻剂前驱物可被传递通过远程等离子体单元，这可以保护单元而不受到损坏，并且允许调整等离子体功率以提供前驱物的特定的解离，这可能对于正在执行的特定的工艺是有益的。经配置以产生不同的蚀刻剂的等离子体流出物的其他的实施例可以内衬有对于该前驱物或前驱物的组合可呈现惰性的不同的材料。
在操作1010处，含氟的前驱物的等离子体流出物可流入与远程等离子体单元耦接的适配器。在操作1015处，含氢的前驱物可流入适配器。适配器可经配置以提供在适配器内的含氟的前驱物和含氢的前驱物的混合，以在操作1020处产生第一混合物，含氟的前驱物和含氢的前驱物可以通过如同先前描述的挡板来进行进一步的混合。在操作1025处，第一混合物可从适配器流入混合歧管。在操作1030处，第三前驱物可流入混合歧管。第三前驱物可包含附加的含氢的前驱物、附加的含卤素的前驱物，或前驱物的其他的组合。混合歧管可经配置以执行第三前驱物与第一混合物的第二阶段的混合，这可以产生第二混合物1035。
随后，包含所有的三种前驱物的第二混合物可从混合歧管被传递至半导体处理腔室(尽管前驱物可以可选地通过如上所述的附加的挡板)。如先前论述，在别处描述的附加的组件可被使用以控制蚀刻剂的传递和分布。应理解到所标识的前驱物仅为在所描述的腔室中使用的适合的前驱物的示例。在整个公开中论述的腔室和材料可在任何的数目的其他的处理操作中使用，该处理操作可受益于分离前驱物并在传递至处理腔室之前将该前驱物混合。
在前面的描述中，为了解释的目的，已经阐述了许多的细节，以提供本技术的各种实施例的理解。然而，对于本领域技术人员而言将为显而易的是，可以在没有这些细节中的一些或具有额外的细节的情况下实施某些实施例。
已经公开了数个实施例，本领域技术人员将认识到在不背离实施例的精神的情况下，可以使用各种修改、替代性的构造，及等效者。此外，为了避免不必要地混淆本技术，没有描述许多的众所周知的工艺和组件。因此，前文的描述不应被认为是限制本技术的范围。
在提供数值范围的情况下，应理解的是，除非上下文另外明确地指出，在此范围的上限与下限之间的每个中间值至下限单位的最小分数也被具体地公开。包含在陈述的范围中的任何的陈述的数值或未陈述的中间值与在该陈述的范围中的任何其他的陈述的数值或未陈述的中间值之间的任何的较窄的范围。那些较小的范围的上限和下限可以独立地包含在范围中，或排除在该范围之外，并且在较小的范围中包含任一个限制值、不包含任何的限制值，或包含两个限制值的每个范围也被涵盖在技术内(其受到在陈述的范围中的任何的特定排除的限制值的限制)。在陈述的范围包含限制值中的一者或两者的情况中，排除那些包含的限制值中的任一者或两者的范围也包含在内。
如同在本文中和在随附的权利要求中使用的，单数形式“一(a)”、“一个(an)”和“该(the)”包含复数引用(除非上下文另外清楚地指出)。因此，例如，对于“一层(a layer)”的引用包含多个此类层，并且对于“该前驱物(the precursor)”的引用包含对于本领域技术人员已知的一种或多种前驱物及其等效物的引用等等。
此外，当在此说明书中和在后续的权利要求中使用时，词语“包含(comprise)”、“包含(comprising)”、“包含有(contain)”、“包含有(containing)”、“包括(include)”以及“包括(including)”旨在指定陈述的特征、整数、组件或操作的存在，但是它们不排除一个或多个其他的特征、整数、组件、操作、动作或组的存在或增加。

Claims (15)

1.一种处理系统，包含：
处理腔室；
远程等离子体单元，所述远程等离子体单元与所述处理腔室耦接；
挡板，所述挡板并入于所述处理腔室与所述远程等离子体单元之间；以及
混合歧管，所述混合歧管耦接在所述远程等离子体单元与所述处理腔室之间，其中所述混合歧管由第一端和与所述第一端相对的第二端表征，其中所述混合歧管与所述处理腔室在所述第二端处耦接，其中所述混合歧管限定通过所述混合歧管的中央通道，其中所述混合歧管限定沿着所述混合歧管的外部的端口，其中所述端口与限定在所述混合歧管的所述第一端内的第一沟槽流体地耦接，其中所述第一沟槽由在第一内侧壁处的内半径以及外半径表征，并且其中所述第一沟槽提供通过所述第一内侧壁到所述中央通道的流体通路。
2.如权利要求1所述的处理系统，其中所述混合歧管进一步包含第二沟槽，所述第二沟槽被限定在所述混合歧管的所述第一端内，其中所述第二沟槽从所述第一沟槽径向向外定位，其中所述端口与所述第二沟槽流体地耦接，其中所述第二沟槽由在第二内侧壁处的内半径表征，其中所述第二内侧壁进一步限定所述第一沟槽的所述外半径，并且其中所述第二内侧壁限定多个孔，所述孔被限定为通过所述第二内侧壁并且提供通往所述第一沟槽的流体通路。
3.如权利要求1所述的处理系统，其中所述挡板被定位在所述混合歧管的上游处。
4.如权利要求3所述的处理系统，其中所述挡板是第一挡板，并且其中所述处理系统进一步包含第二挡板，所述第二挡板被定位在所述混合歧管的下游处，其中所述第一挡板和所述第二挡板各自限定一个或多个孔，并且其中所述第一挡板由与所述第二挡板不同的孔轮廓表征。
5.如权利要求3所述的处理系统，其中所述挡板限定通过所述挡板的多个孔，其中所述多个孔中的每个孔被限定为从所述挡板的第一表面作为入口通过与所述挡板的所述第一表面相对的所述挡板的第二表面作为出口，并且其中所述出口围绕垂直于所述挡板并且延伸通过所述入口的轴而相对于所述入口径向地偏移以限定通过每个孔的旋转通道。
6.如权利要求3所述的处理系统，其中所述挡板包含陶瓷或经涂覆的铝。
7.如权利要求1所述的处理系统，进一步包含隔离器，所述隔离器被耦接在所述混合歧管与所述远程等离子体单元之间，其中所述隔离器包含陶瓷。
8.如权利要求1所述的处理系统，进一步包含：
适配器，所述适配器耦接在所述混合歧管与所述远程等离子体单元之间，以及
间隔件，所述间隔件被定位在所述适配器与所述混合歧管之间。
9.如权利要求8所述的处理系统，其中所述适配器由第一端和与所述第一端相对的第二端表征，其中所述适配器限定中央通道，所述中央通道部分地通过适配器延伸，其中所述适配器限定通过所述适配器的外部的端口，其中所述端口与被限定在所述适配器内的混合通道流体地耦接，并且其中所述混合通道与所述中央通道流体地耦接，并且其中所述挡板被安置在被限定在所述适配器的所述第二端中的凹部中。
10.一种处理系统，包含:
远程等离子体单元；
处理腔室，所述处理腔室包含：
气体箱，所述气体箱限定中央通道，
阻挡板，所述阻挡板与所述气体箱耦接，其中所述阻挡板限定通过所述阻挡板的多个孔，以及
面板，所述面板与所述阻挡板在所述面板的第一表面处耦接；
挡板；以及
混合歧管，所述混合歧管与所述气体箱耦接，其中所述混合歧管由第一端和与所述第一端相对的第二端表征，其中所述混合歧管与所述处理腔室在所述第二端处耦接，其中所述混合歧管限定通过所述混合歧管的中央通道，通过所述混合歧管的中央通道与被限定为通过所述气体箱的中央通道流体地耦接，其中所述混合歧管沿着所述混合歧管的外部限定端口，其中所述端口与被限定在所述混合歧管的所述第一端内的第一沟槽流体地耦接，其中所述第一沟槽由在第一内侧壁处的内半径以及外半径表征，并且其中所述第一沟槽提供通过所述第一内侧壁到所述中央通道的流体通路。
11.如权利要求10所述的处理系统，进一步包含加热器，所述加热器围绕耦接至所述气体箱的混合歧管而在外部耦接至所述气体箱。
12.如权利要求10所述的处理系统，其中所述挡板是定位在所述混合歧管的上游处的第一挡板，并且其中所述处理系统进一步包含第二挡板，所述第二挡板定位在所述混合歧管的下游处并且被安置在被限定在所述混合歧管的所述第二端中的凹部中。
13.如权利要求10所述的处理系统，进一步包含适配器，所述适配器与所述远程等离子体单元耦接，其中所述适配器由第一端和与所述第一端相对的第二端表征，其中所述适配器限定中央通道，所述中央通道从所述第一端通过所述适配器部分地延伸至所述适配器的中点，其中所述适配器限定从所述适配器的所述中点朝向所述适配器的所述第二端延伸的多个进入通道，并且其中所述多个进入通道围绕通过所述适配器的中心轴径向地分布。
14.如权利要求13所述的处理系统，其中所述适配器限定通过所述适配器的外部的端口，其中所述端口与被限定在所述适配器内的混合通道流体地耦接，并且其中所述混合通道通过所述适配器的中央部分朝向所述适配器的所述第二端延伸。
15.如权利要求13所述的处理系统，其中所述适配器限定通过所述适配器的外部的端口，其中所述端口与被限定在所述适配器内的混合通道流体地耦接，并且其中所述混合通道通过所述适配器的中央部分朝向所述适配器的所述中点延伸以流体地进入由所述适配器限定的所述中央通道。
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