TW202036716A - 處理腔室混合系統 - Google Patents

處理腔室混合系統 Download PDF

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TW202036716A
TW202036716A TW109100445A TW109100445A TW202036716A TW 202036716 A TW202036716 A TW 202036716A TW 109100445 A TW109100445 A TW 109100445A TW 109100445 A TW109100445 A TW 109100445A TW 202036716 A TW202036716 A TW 202036716A
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甘納許 蘇布司瓦梅
史蒂芬 瓦內特
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美商應用材料股份有限公司
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Abstract

示例性的處理系統可包含：一處理腔室，且可包含：一遠端電漿單元，該遠端電漿單元與該處理腔室耦接。示例性的系統亦可包含：耦接在該遠端電漿單元與該處理腔室之間的一混合歧管。該混合歧管可藉由一第一端和與該第一端相對的一第二端來表徵，並且可與該處理腔室相耦接於該第二端處。該混合歧管可界定穿過該混合歧管的一中央通道，及可沿著該混合歧管的一外部界定一埠口。該埠口可與界定在該混合歧管的該第一端內的一第一溝槽流體地耦接。該第一溝槽可藉由在一第一內側壁處的一內半徑和一外半徑來表徵，且該第一溝槽可提供通往穿過該第一內側壁的該中央通道的流體通路。

Description

處理腔室混合系統
本技術關於系統、製程及設備。更為特定地，本技術關於用於在系統和腔室內傳遞前驅物的系統和方法。
藉由在基板表面上產生複雜的圖案化的材料層的製程使得積體電路成為可能。在基板上產生圖案化的材料需要受控制的方法以去除暴露的材料。化學蝕刻用於多種目的，該等目的包含：將光阻劑中的圖案轉移到下面的層、變薄的層，或在表面上已經存在的特徵的變薄的橫向尺寸。通常期望具有一種蝕刻製程，該蝕刻製程對於蝕刻一種材料的蝕刻速度快於蝕刻另一種材料的蝕刻速度，以促進(例如)圖案轉移製程或單個材料的去除。據說此種蝕刻製程對於第一種材料是具有選擇性的。由於材料、電路及製程的多樣性，已經開發出對各種材料具有選擇性的蝕刻製程。
基於在製程中使用的材料，蝕刻製程可被稱為濕式或乾式。濕式HF蝕刻優先於其他的介電質和材料去除二氧化矽(silicon oxide)。然而，濕式製程可能難以穿透某些受到限制的溝槽，並且有時候也可能會使得其餘的材料變形。乾式蝕刻製程可能滲透至複雜的特徵和溝槽，但是可能無法提供可接受的自上至下的輪廓。隨著在下一代的裝置中裝置尺寸持續地縮小，將前驅物傳遞至腔室並通過腔室的方式可能會產生越來越大的影響。隨著處理條件的一致性的重要性持續地提高，腔室設計和系統設置可能針對於產生的裝置的品質扮演重要的角色。
因此，需要可被使用以產生高品質的裝置和結構的改進的系統和方法。此些和其他的需求是藉由本技術來解決。
示例性的處理系統可包含：一處理腔室，且可包含：一遠端電漿單元，該遠端電漿單元與該處理腔室耦接。系統可包含：併入於該處理腔室與該遠端電漿單元之間的一擋板。示例性的系統亦可包含：一混合歧管，該混合歧管耦接在該遠端電漿單元與該處理腔室之間。該混合歧管可藉由一第一端和與該第一端相對的一第二端來表徵，並可與該處理腔室相耦接於該第二端處。該混合歧管可界定穿過該混合歧管的一中央通道，且可沿著該混合歧管的一外部界定一埠口。該埠口可與界定在該混合歧管的該第一端內的一第一溝槽流體地耦接。該第一溝槽可藉由在一第一內側壁處的一內半徑和一外半徑來表徵，且該第一溝槽可提供通往穿過該第一內側壁的該中央通道的流體通路。
在一些實施例中，該混合歧管亦可包含：一第二溝槽，該第二溝槽被界定在該混合歧管的該第一端內。該第二溝槽可從該第一溝槽徑向向外定位，該埠口可與該第二溝槽流體地耦接，且該第二溝槽可藉由在一第二內側壁處的一內半徑來表徵。該第二內側壁亦可界定該第一溝槽的外半徑，且該第二內側壁可界定複數個孔，該等孔被界定為穿過該第二內側壁，且提供通往該第一溝槽的流體通路。該擋板可被設置在該混合歧管的上游處。該擋板可為一第一擋板，且該處理系統亦可包含：一第二擋板，該第二擋板設置在該混合歧管的下游處。該第一擋板和該第二擋板各自可界定一或多個孔，且該第一擋板可藉由與該第二擋板不同的一孔輪廓來表徵。
該擋板可界定穿過該擋板的複數個孔。該複數個孔中的每個孔可從作為一入口的該擋板的一第一表面通過作為一出口的與該擋板的該第一表面相對的該擋板的一第二表面來界定。該出口可圍繞垂直於該擋板且延伸通過該入口的一軸而相對於該入口徑向地偏移以界定穿過每個孔的一旋轉通道。該擋板可包含：陶瓷或塗覆的鋁。該系統亦可包含：一隔離器，該隔離器耦接在該混合歧管與該遠端電漿單元之間。該隔離器可為陶瓷或包含陶瓷。該系統亦可包含：一適配器，該適配器被耦接在該混合歧管與該遠端電漿單元之間。該適配器可藉由一第一端和與該第一端相對的一第二端來表徵。該適配器可界定一中央通道，該中央通道部分地穿過該適配器延伸。該適配器可界定穿過該適配器的一外部的一埠口。該埠口可與被界定在該適配器內的一混合通道流體地耦接，且該混合通道可與該中央通道流體地耦接。該擋板可位於被界定在該適配器的該第二端中的一凹部中。該系統亦可包含：設置在該適配器與該混合歧管之間的一間隔件。
本技術的一些實施例可涵蓋處理系統。該處理系統可包含：一遠端電漿單元。該系統可包含：一處理腔室，該處理腔室可包含：一氣體箱，該氣體箱界定一中央通道及一阻擋板，該阻擋板與該氣體箱耦接。該阻擋板可界定穿過該阻擋板的複數個孔。該腔室亦可包含：一面板，該面板與該阻擋板相耦接於該面板的一第一表面處。該腔室可包含：一擋板。該系統亦可包含：一混合歧管，該混合歧管與該氣體箱耦接。該混合歧管可藉由一第一端和與該第一端相對的一第二端來表徵。該混合歧管可與該處理腔室耦接於該第二端處。該混合歧管可界定穿過該混合歧管的一中央通道，其中該混合歧管與被界定為通過該氣體箱的該中央通道流體地耦接。該混合歧管可沿著該混合歧管的一外部來界定一埠口。該埠口可與被界定在該混合歧管的該第一端內的一第一溝槽流體地耦接。該第一溝槽可藉由在一第一內側壁處的一內半徑和一外半徑來表徵，且該第一溝槽可提供通往穿過該第一內側壁的該中央通道的流體通路。
在一些實施例中，該系統亦可包含：一加熱器，該加熱器圍繞耦接至該氣體箱的一混合歧管而在外部耦接至該氣體箱。該擋板可為一第一擋板，該第一擋板設置在該混合歧管的上游處。該處理系統亦可包含：一第二擋板，該第二擋板被設置在該混合歧管的下游處，且位於被界定在該混合歧管的該第二端的一凹部中。該系統亦可包含：一適配器，該適配器與該遠端電漿單元相耦接。該適配器可藉由一第一端和與該第一端相對的一第二端來表徵。該適配器可界定一中央通道，該中央通道從該第一端至該適配器的一中點部分地延伸穿過該適配器。該適配器可界定複數個進入通道，該等進入通道從該適配器的該中點朝向該適配器的該第二端延伸，且該複數個進入通道可圍繞通過該適配器的一中心軸徑向地分佈。該適配器可界定穿過該適配器的一外部的一埠口。該埠口可與被界定在該適配器內的一混合通道流體地耦接。該混合通道可穿過該適配器的一中央部分朝向該適配器的該第二端延伸。該適配器可界定穿過該適配器的一外部的一埠口。該埠口可與被界定在該適配器內的一混合通道流體地耦接。該混合通道可穿過該適配器的一中央部分朝向該適配器的該中點延伸以流體地進入由該適配器界定的該中央通道。
本技術的一些實施例亦可涵蓋傳遞前驅物通過一處理系統的方法。該方法可包含以下步驟：在一遠端電漿單元中形成一含氟的前驅物的一電漿。該方法可包含以下步驟：使得該含氟的前驅物的電漿流出物流入一適配器。該方法可包含以下步驟：使得一含氫的前驅物流入該適配器。該方法可包含以下步驟：將含氫的前驅物與電漿流出物混合以產生一第一混合物。該方法可包含以下步驟：使得該第一混合物流入一混合歧管。該方法可包含以下步驟：使得一第三前驅物流入該混合歧管。該方法亦可包含以下步驟：將該第三前驅物與該第一混合物混合以產生一第二混合物。可使得該第一混合物或該第二混合物中的一者流動通過一擋板。在一些實施例中，一第一擋板可被併入於該混合歧管的上游處。
此種技術可提供相對於傳統的系統和技術的許多好處。舉例而言，與傳統的設計相比，本技術可利用有限數量的組件。此外，藉由利用在腔室外部產生蝕刻劑物質和控制對於腔室進行的傳遞的組件，可以比傳統的系統更為均勻地提供混合和對於基板的傳遞。結合後文的描述和隨附的圖式更為詳細地描述此些和其他的實施例和它們的優點和特徵中的許多者。
本技術包含：用於執行半導體製造操作的半導體處理系統、腔室及組件。在半導體製造期間執行的許多的乾式蝕刻操作可能涉及到多個前驅物。當以各種方式賦予能量和進行組合時，此些蝕刻劑可被傳遞至基板以去除或修改基板的態樣。傳統的處理系統可利用多種方式來提供前驅物以(例如)用於沉積或蝕刻。提供增強的前驅物的一種方式是在傳遞前驅物通過處理腔室並到達基板(例如，晶圓)來進行處理之前，提供所有的前驅物通過遠端電漿單元。然而，此製程的問題是不同的前驅物可能與不同的材料反應，此可能導致遠端電漿單元或傳遞前驅物的組件受到損壞。舉例而言，增強的含氟的前驅物可以與鋁表面反應，但是可不與氧化物表面反應。增強的含氫的前驅物可不與在遠端電漿單元內的鋁表面反應，但是可與氧化物塗層反應並去除氧化物塗層。因此，若兩種前驅物一起被傳遞通過遠端電漿單元，它們可能會損壞在單元內的塗覆或內襯。此外，點燃電漿的功率可能藉由產生的解離量來影響正在執行的製程。舉例而言，在一些製程中，對於含氫的前驅物的高解離量可能是有益的，但是對於含氟的前驅物的低解離量可允許更受到控制的蝕刻。
傳統的處理亦可傳遞一種前驅物通過遠端電漿裝置以進行電漿處理，並且可將第二前驅物直接地傳遞至腔室。然而，此製程的問題是：前驅物的混合可能是困難的、可能無法提供對於蝕刻劑產生的充分的控制，並且可能無法在晶圓或基板處提供均勻的蝕刻劑。此可能導致：在基板的整個表面上無法均勻地執行製程，其可能隨著圖案化和形成繼續進行而造成裝置的問題。
本技術可藉由利用經配置以在將前驅物傳遞至腔室之前混合前驅物的組件和系統來克服此些問題，而僅使得一種蝕刻前驅物被傳遞通過遠端電漿單元(儘管多種前驅物亦可流動通過遠端電漿單元(例如，載氣或其他的蝕刻前驅物))。本技術可涵蓋：進一步地混合和均質化被傳遞通過系統的前驅物的流動裝置(例如，擋板)。特定的旁路架構可在將前驅物傳遞至處理腔室之前將其充分地混合，且可在將每個前驅物加入系統時提供中間的混合。如此可允許：在執行均勻的製程的同時保護遠端電漿單元。本技術的腔室亦可包含：使得通過腔室的熱導率最大化，且藉由以特定的方式來耦接組件以增加維修的容易性的組件配置。
儘管其餘的揭示內容將常規地利用所揭示的技術來識別特定的蝕刻製程，將容易地理解到系統和方法同樣地適用於在描述的腔室中可能發生的沉積和清潔製程。因此，技術不應該被認為是受到如此的限制而僅與蝕刻製程一起使用。本揭露將在描述根據本技術的實施例的組件態樣和對於此系統的變化之前，論述可與本技術一起使用以執行某些去除操作的一種可能的系統和腔室。
第1圖圖示根據實施例的沉積、蝕刻、烘烤及固化腔室的處理系統100的一個實施例的俯視圖。在圖式中，一對前開式晶圓傳送盒(FOUP)102供應各種尺寸的基板，該等基板是藉由機械手臂104接收且放置到低壓保持區域106，隨後再放置到基板處理腔室108a-f中的一者，該等基板處理腔室被設置在串聯部分109a-c中。第二機械手臂110可被使用以將基板晶圓從保持區域106傳送至基板處理腔室108a-f並返回。每個基板處理腔室108a-f可被裝配成執行一些基板處理操作，其中除了循環層沉積(CLD)、原子層沉積(ALD)、化學氣相沉積(CVD)、物理氣相沉積(PVD)、蝕刻、預先清洗、脫氣、定向及其他的基板製程之外，該等基板處理操作包含：在本文中描述的乾式蝕刻製程。
基板處理腔室108a-f可包含：用於對於在基板晶圓上的介電膜進行沉積、退火、固化及/或蝕刻的一或多個系統組件。在一配置中，可使用二對的處理腔室(例如，108c-d和108e-f)以將介電質材料沉積在基板上，且可使用第三對的處理腔室(例如，108a-b)以蝕刻沉積的介電質。在另一個配置中，所有的三對腔室(例如，108a-f)可經配置以蝕刻在基板上的介電膜。所描述的製程中的任何的一或多個可以在與不同的實施例中圖示的製造系統分離的腔室中進行。將理解到的是：系統100考慮到用於介電膜的沉積、蝕刻、退火及固化腔室的額外的配置。
第2圖圖示根據本技術的實施例的示例性的處理系統200的示意性的橫截面圖。系統200可包含：處理腔室205和遠端電漿單元210。遠端電漿單元210可與具有一或多個組件的處理腔室205耦接。遠端電漿單元210可與隔離器215、適配器220、間隔件230及混合歧管235中的一或多個相耦接。混合歧管235可與處理腔室205的頂部耦接，並且可與處理腔室205的入口耦接。
隔離器215可與遠端電漿單元210相耦接於第一端211處，且可與適配器220相耦接於與第一端211相對的第二端212處。可藉由隔離器215來界定一或多個通道。在第一端211處可界定通向通道213的開口或埠口。通道213可被界定在隔離器215內的中間處，且可藉由在垂直於通過隔離器215的中心軸的方向上的第一橫截面表面區域來表徵，其中隔離器可在從遠端電漿單元210流出的方向上。通道213的直徑可以等於遠端電漿單元210的出口的直徑(或與遠端電漿單元210的出口的直徑相同)。通道213可藉由從第一端211至第二端212的長度來表徵。通道213可延伸通過隔離器215的整個長度，或小於從第一端211至第二端212的長度的長度。舉例而言，通道213可延伸小於從隔離器215的第一端211至第二端212的長度的一半的長度、通道213可延伸隔離器215的從第一端211至第二端212的長度的一半的長度、通道213可延伸多於隔離器215的從第一端211至第二端212的長度的一半的長度，或通道213可延伸隔離器215的從第一端211至第二端212的長度的大約一半的長度。
通道213可以過渡至較小的孔214，該等孔從被界定在隔離器215內的通道213的底部延伸通過第二端212。舉例而言，一個此類較小的孔214被示例說明於第2圖中(雖然應理解到可從通道213通過隔離器215至第二端212來界定任何數目的孔214)。較小的孔可以圍繞隔離器215的中心軸來分佈(如同將於後文中進一步地論述者)。較小的孔214可藉由小於通道213的直徑的50%的直徑(或通道213的直徑的大約50%的直徑)來表徵，且可藉由小於通道213的直徑的40%的直徑(或通道213的直徑的大約40%的直徑)、小於通道213的直徑的30%的直徑(或通道213的直徑的大約30%的直徑)、小於通道213的直徑的20%的直徑(或通道213的直徑的大約20%的直徑)、小於通道213的直徑的10%的直徑(或通道213的直徑的大約10%的直徑)、小於通道213的直徑的5%的直徑(或通道213的直徑的大約5%的直徑)，或小於通道213的直徑的直徑來表徵。隔離器215亦可界定：被界定在隔離器215下方的一或多個溝槽。溝槽可為(或可包含)被界定在隔離器215內的一或多個環形的凹部以允許o形環或彈性元件的安置，前述者可允許與適配器220耦接。
雖然處理系統的其他的組件可為金屬或導熱材料，隔離器215可為導熱性較低的材料。在一些實施例中，隔離器215可為(或包含)：陶瓷、塑膠，或經配置以提供在遠端電漿單元210與腔室205之間的熱中斷的其他的絕熱組件。在操作期間，遠端電漿單元210可被冷卻或操作在相對於腔室205為較低的溫度，而腔室205可被加熱或操作在相對於遠端電漿單元210為較高的溫度。提供陶瓷或絕熱隔離器215可防止或限制在組件之間的熱、電或其他的干擾。
在實施例中，適配器220可與隔離器215的第二端212耦接。適配器220可藉由第一端217和與第一端相對的第二端218來表徵。適配器220可界定通過適配器220的部分的一或多個中央通道。舉例而言，從第一端217處開始，中央通道219，或第一中央通道可至少部分地通過適配器220朝向第二端218延伸，且可延伸通過適配器220的任何的長度。類似於隔離器215的中央通道213，中央通道219可延伸小於通過適配器220的長度的一半的長度、可延伸適配器220的長度的大約一半的長度，或可延伸多於適配器220的長度的一半的長度。中央通道219可藉由一直徑來表徵，該直徑可與通道213的直徑相關、等於通道213的直徑，或大致上等於通道213的直徑。此外，中央通道219可藉由限定隔離器215的孔214的周圍(且在實施例中恰好限定孔214的周圍)的形狀的直徑來表徵(例如，藉由基本上類似於或等於從中心軸通過隔離器215界定的半徑且延伸至每個孔214的直徑的外邊緣的半徑來表徵)。舉例而言，中央通道219可藉由圓形或橢圓形來表徵，該圓形或該橢圓形是藉由可與每個孔214的外部分相切地延伸的一或多個直徑來表徵。
適配器220可界定：在該適配器220內的中央通道219的底部，該底部可界定：從中央通道219至可至少部分地延伸通過適配器220的複數個孔225的過渡。過渡可發生在通過該適配器的中點處，該中點可位於沿著適配器的長度的任何的位置。舉例而言，孔225可從中央通道219的底部朝向適配器220的第二端218延伸，且可完全地延伸通過第二端218。在其他的實施例中，孔225可從進入中央通道219的第一端延伸通過適配器220的中間部分至進入第二中央通道221的第二端，該第二中央通道可延伸通過適配器220的第二端218。中央通道221可藉由類似於中央通道219的直徑來表徵，且在其他的實施例中，中央通道221的直徑可大於或小於中央通道219的直徑。孔225可藉由小於中央通道219的直徑的50%的直徑(或中央通道219的直徑的大約50%的直徑)來表徵，且可藉由小於中央通道219的直徑的40%的直徑(或中央通道219的直徑的大約40%的直徑)、小於中央通道219的直徑的30%的直徑(或中央通道219的直徑的大約30%的直徑)、小於中央通道219的直徑的20%的直徑(或中央通道219的直徑的大約20%的直徑)、小於中央通道219的直徑的10%的直徑(或中央通道219的直徑的大約10%的直徑)、小於中央通道219的直徑的5%的直徑(或中央通道219的直徑的大約5%的直徑)，或小於中央通道219的直徑的直徑來表徵。
適配器220可界定穿過適配器220的外部的埠口222(例如，沿著適配器220的側壁或側部)。埠口222可提供用於傳遞第一混合前驅物以與從遠端電漿單元210提供的前驅物進行混合的通路。埠口222可提供通往可至少部分地通過適配器220朝向適配器220的中心軸延伸的混合通道223的流體通路。混合通道223可以任何的角度延伸至適配器220，且在一些實施例中，混合通道223的第一部分224可垂直於穿過適配器220的中心軸且延著流動方向延伸(儘管第一部分224可朝向穿過適配器220的中心軸且以傾斜的角度或斜向的角度來前進)。第一部分224可穿過孔225，該等孔可圍繞適配器220的中心軸分佈(類似於在前文中描述的隔離器215的孔214)。藉由此分佈，第一部分224可朝向適配器220的中心軸延伸通過孔225，而不與孔225相交或交叉。
混合通道223的第一部分224可過渡至混合通道223的第二部分226，該第二部分可垂直地穿過適配器220。在一些實施例中，第二部分226可沿著穿過適配器220的中心軸延伸並與該中心軸軸向地對準。第二部分226亦可延伸通過圓形或其他的幾何形狀的中間部分，該圓形或該其他的幾何形狀延伸通過每個孔225的中心軸。第二部分226可與孔225一起延伸至第二中央通道221且與第二中央通道221流體地耦接。因此，在一些實施例中，被傳遞通過埠口222的前驅物可與被傳遞通過在適配器220的下部分內的遠端電漿單元210的前驅物混合。此可以構成在遠端電漿單元210與處理腔室205之間的組件內的第一階段的混合。
在第2圖中額外地示例說明者是一可替代性的實施例，其中混合通道223的第二部分226在相反的方向上垂直地延伸。舉例而言，如同在前文中描述者，第二部分226a可朝向第二中央通道221垂直地延伸以在此區域內混合。可替代性地，第二部分226b可朝向第一中央通道219垂直地延伸。儘管以隱藏的視圖來示例說明，第二部分226b被示例說明為單獨的實施例，並且應理解到根據本技術的適配器可包含朝向適配器220的第一端217或第二端218延伸的第二部分226的任何的版本。當在朝著第一中央通道219的方向上進行傳遞時，被傳遞通過埠口222的第二前驅物的混合可發生在適配器220的第一部分內，並且可藉由使得被傳遞通過埠口222的前驅物與從遠端電漿單元210傳遞的前驅物一起流動通過複數個孔225來提供改善的均勻性。當朝向第二中央通道221傳遞時，由於前驅物的流動的緣故，可能會發生不太完全的混合，此可能會增加被傳遞通過中央通道221的前驅物的中央濃度。當朝向第一中央通道219傳遞時，通過埠口222的前驅物可在第一中央通道內徑向地分佈，並且更為均勻地行進通過孔225(其中由於來自遠端電漿單元210的向下流動和/或通過腔室的壓力的緣故而迫使前驅物更為均勻地行進通過孔)。
適配器220可由與隔離器215相類似的或不同的材料製成。在一些實施例中，雖然隔離器可包含：陶瓷或絕緣材料，適配器220可由鋁製成或包含鋁(其中包含鋁的氧化物、在一或多個表面上的經處理過的鋁，或某些其他的材料)。舉例而言，適配器220的內表面可以塗覆有一或多種材料以保護適配器220，而避免受到可能由來自遠端電漿單元210的電漿流出物所造成的損壞。適配器220的內表面可以用可對於氟的電漿流出物呈現惰性的一系列的材料來進行陽極氧化處理(anodized)，並且該等材料可包含(例如)：氧化釔或鈦酸鋇。適配器220亦可界定溝槽227和228，其中該等溝槽可為環形的溝槽，且可經配置以容納o形環或其他的密封元件。
適配器220的第二端218可界定：延伸至適配器的一凹部，並且第一擋板229可位於該凹部內。第一擋板229可以可選擇地被包含在一些系統配置中，並且可提供流動通過適配器220的第一前驅物和第二前驅物的改善的混合。第一擋板229可界定：前驅物可流動通過其中的一或多個孔或通道，該一或多個孔或該通道可增加前驅物的混合的均勻性。第一擋板229將在後文中更為詳細地描述。
與適配器220耦接者可為間隔件230。間隔件230可為(或包含)陶瓷，且可為與在實施例中的隔離器215或適配器220相類似的材料。間隔件230可界定：穿過間隔件230的中央孔232。中央孔232可藉由從靠近適配器220的第二中央通道221的部分穿過間隔件230至間隔件230的相對側的錐形形狀來表徵。中央孔232的靠近第二中央通道221的部分可藉由等於或類似於第二中央通道221的直徑的直徑來表徵。在實施例中，中央孔232可藉由沿著間隔件230的長度的大於或大約10%的錐度的百分比來表徵，且可藉由大於或大約20%、大於或大約30%、大於或大約40%、大於或大約50%、大於或大約60%、大於或大約70%、大於或大約80%、大於或大約90%、大於或大約100%、大於或大約150%、大於或大約200%、大於或大約300%，或更大的錐度的百分比來表徵。
混合歧管235可與間隔件230耦接於第一端236或第一表面處，且可與腔室205耦接於與第一端236相對的第二端237處。混合歧管235可界定中央通道238，該中央通道可從第一端236延伸至第二端237，且可經配置以將前驅物傳遞至處理腔室205。混合歧管235亦可經配置以將另外的前驅物與從適配器220傳遞的混合的前驅物合併。混合歧管可提供在系統內的第二階段的混合。混合歧管235可沿著混合歧管235的外部(例如，沿著混合歧管235的一側或側壁)界定埠口239。在一些實施例中混合歧管235可界定在混合歧管235的相對側上的多個埠口239以提供用於將前驅物傳遞至系統的額外的通路。混合歧管235亦可界定：在混合歧管235的第一表面236內的一或多個溝槽。舉例而言，混合歧管235可界定第一溝槽240及第二溝槽241，該第一溝槽和該第二溝槽可提供從埠口239至中央通道238的流體通路。舉例而言，埠口239可提供通往通道243的通路，該通道可提供通往一個或二個溝槽的流體通路(例如，從如同示例說明的溝槽的下方)。在後文中將進一步詳細地描述溝槽240、241。
中央通道238可藉由從第一端236延伸至擴口部分246的第一部分242來表徵。第一部分242可藉由圓柱形的輪廓來表徵，且可藉由類似於或等於間隔件230的中央孔232的出口的直徑來表徵。在實施例中，擴口部分246可藉由大於或大約10%、大於或大約20%、大於或大約30%、大於或大約40%、大於或大約50%、大於或大約60%、大於或大約70%、大於或大約80%、大於或大約90%、大於或大約100%、大於或大約150%、大於或大約200%、大於或大約300%，或更大的擴口的百分比來表徵。在實施例中，混合歧管235可由與適配器220相類似或不同的材料製成。舉例而言，混合歧管235可包含：鎳，其可提供對於前驅物可能接觸混合歧管的所有的部分的足夠的保護。與傳統的技術不同，因為氟電漿流出物可能已經在混合歧管的上游處進行了混合，所以可能不會發生與重新組合有關的問題。舉例而言，在不希望受到任何的特定的理論約束的情況下，鎳可催化氟自由基重新組合為雙原子氟，此可能會導致在傳統的技術中的多晶矽損耗。當氟流出物在傳遞至鎳、鍍鎳或塗覆的組件之前進行混合時，此製程可能會受到限制(因為可能會降低氟流出物的濃度，從而進一步地保護處於基板級別的多晶矽特徵)。
擴口部分246可為被傳遞通過混合歧管235而藉由出口247通過第二端237的前驅物提供出口。穿過混合歧管235的中央通道238的部分可經配置以在提供混合的前驅物至腔室205之前提供：被傳遞至混合歧管的前驅物的充分或徹底的混合。與傳統的技術不同，藉由在傳遞至腔室之前進行蝕刻劑或前驅物的混合，本系統可提供在圍繞腔室和基板分佈之前具有均勻的特性的蝕刻劑。此外，藉由提供多個階段的混合，可對於前驅物中的每一者提供更具有均勻性的混合。使用此方式，利用本技術執行的製程可具有在整個基板表面上的更為均勻的結果。所示例說明的組件的堆疊亦可藉由減少包含在堆疊中的彈性密封件的數目來限制顆粒的積聚，該等彈性密封件可能隨著時間推移而退化，並產生可能會影響正在執行的製程的顆粒。
類似於先前描述的第一擋板229，本技術的一些實施例可以可選擇地包含：第二擋板249，其中當第二擋板被包含時，其可與第一擋板229一起被包含在內，或代替第一擋板229。混合歧管235的第二端237可界定：延伸至混合歧管的凹部，且第二擋板249可被安置在凹部內。第二擋板249可以可選擇地被包含在一些系統配置中，並且可提供第三前驅物與流動通過混合歧管235的第一前驅物和第二前驅物的混合物的改善的混合。第二擋板249亦可進一步地當僅包含兩個主要前驅物時，將第二前驅物與第一前驅物混合，其中該兩個主要前驅物亦可包含另外的載氣或其他的材料。第二擋板249可界定前驅物可流動通過其中的一或多個孔或通道，該等孔或該等通道可增加前驅物的混合的均勻性。在後文中將更為詳細地描述第二擋板249。
腔室205可包含：具有堆疊排置的數個組件。腔室堆疊可包含：氣體箱250、阻擋板260、面板270、可選擇的離子抑制元件280，以及蓋間隔件290。組件可被利用以分配通過腔室的前驅物或一組前驅物而將蝕刻劑或其他的前驅物均勻地傳遞至基板以進行處理。在實施例中，此些組件可以是堆疊的板，每個堆疊板至少部分地界定腔室205的外部。
氣體箱250可界定腔室入口252。中央通道254可被界定為穿過氣體箱250以將前驅物傳遞至腔室205。入口252可與混合歧管235的出口247對準。在實施例中，入口252和/或中央通道254可藉由類似的直徑來表徵。中央通道254可延伸穿過氣體箱250，且經配置以將一或多個前驅物傳遞至由氣體箱250從上方界定的空間257。氣體箱250可包含：第一表面253(例如，頂表面)，以及與第一表面253相對的第二表面255(例如，氣體箱250的底表面)。在實施例中，頂表面253可為平面或大致上為平面的表面。與頂表面253耦接者可為加熱器248。
在實施例中，加熱器248可經配置以加熱腔室205，並且可傳導性地加熱每個蓋堆疊組件。加熱器248可為任何種類的加熱器，該加熱器包含：流體加熱器、電加熱器、微波加熱器，或經配置以將熱傳導性地傳遞至腔室205的其他的裝置。在一些實施例中，加熱器248可為(或可包含)：圍繞氣體箱250的第一表面253且以環形圖案形成的電加熱器。加熱器可跨越氣體箱250，並且圍繞在混合歧管235周圍來界定。加熱器可為板加熱器或電阻性元件加熱器，其可經配置以提供高達2,000W、大約2,000W，或大於大約2,000W的熱，並且可經配置以提供大於或大約2,500W、大於或大約3,000W、大於或大約3,500W、大於或大約4,000W、大於或大約4,500W、大於或大約5,000W，或更高瓦數的熱。
在實施例中，加熱器248可經配置以產生高達50°C、大約50°C，或大於大約50°C的可變的腔室組件溫度，並且可經配置以產生大於或大約75°C、大於或大約100°C、大於或大約150°C、大於或大約200°C、大於或大約250°C、大於或大約300°C，或更高的腔室組件溫度。加熱器248可經配置以將個別的組件(例如，離子抑制元件280)的溫度升高至此些溫度中的任何者以促進處理操作(例如，退火)。在一些處理操作中，可以將基板朝向離子抑制元件280升高以進行退火操作，並且可以調整加熱器248以將加熱器的溫度傳導性地提升至前文所述的任何的特定的溫度，或在所述的溫度的任何者之內(或者之間)的任何的溫度範圍內。
氣體箱250的第二表面255可與阻擋板260耦接。阻擋板260可藉由等於或類似於氣體箱250的直徑的直徑來表徵。阻擋板260可界定：穿過阻擋板260的複數個孔263，其中僅示例說明孔的一樣本，該等孔可允許來自空間257的前驅物(例如，蝕刻劑)的分散，並且可開始分配前驅物而通過腔室205以均勻地傳遞至基板。雖然僅示例說明了數個孔263，應理解到阻擋板260可具有穿過結構界定的任何數目的孔263。阻擋板260可藉由在阻擋板260的外徑處的凸起的環形部分265，以及在阻擋板260的外徑處的降低的環形部分266來表徵。在實施例中，凸起的環形部分265可為阻擋板260提供結構剛性，並且可界定空間257的側面和外徑。阻擋板260亦可從下方界定空間257的底部。空間257可允許在通過阻擋板260的孔263之前，從氣體箱250的中央通道254分配前驅物。在實施例中，降低的環形部分266亦可為阻擋板260提供結構剛性，並且可界定第二空間258的側面或外徑。阻擋板260亦可從上方界定空間258的頂部，而空間258的底部可由面板270從下方界定。
面板270可包含：第一表面272和與第一表面272相對的第二表面274。面板270可與阻擋板260相耦接於第一表面272處，該第一表面可與阻擋板260的降低的環形部分266接合。面板270可界定在第二表面274的內部處的突出部分273，該突出部分延伸到至少部分地界定在面板270內或至少部分地由面板270來界定的第三空間275。舉例而言，面板270可界定第三空間275的側面或外徑，以及從上方界定空間275的頂部，而離子抑制元件280可從下方界定第三空間275。面板270可界定：穿過面板的複數個通道(儘管在第2圖中未示例說明)。
離子抑制元件280可被設置在面板270的第二表面274的附近處，並且可與面板270耦接於第二表面274處。離子抑制元件280可經配置以減少離子遷移至容納基板的腔室205的處理區域的情況。離子抑制元件280可界定：穿過結構的複數個孔(儘管在第2圖中未示例說明)。在實施例中，氣體箱250、阻擋板260、面板270及離子抑制元件280可耦接在一起，並且在實施例中可直接地耦接在一起。藉由直接地耦接組件，由加熱器248產生的熱可經由組件來傳導以維持特定的腔室溫度，該腔室溫度可利用在組件之間的較小的變化來維持。離子抑制元件280亦可接觸蓋間隔件290，該離子抑制元件和該蓋間隔件可以一起至少部分地界定一電漿處理區域，其中基板在處理期間被保持在該電漿處理區域中。
第3圖圖示根據本技術的一些實施例的隔離器215的示意性的部分的底部平面圖。如同先前論述者，隔離器215可界定：從隔離器215的中央通道213延伸至隔離器215的第二端212的複數個孔214。孔214可圍繞通過隔離器215的中心軸分佈，並且可相對於通過隔離器215的中心軸等距離地分佈。隔離器215可界定任何數目的孔214，該等孔可增加流動通過隔離器215的前驅物的移動、分佈及/或湍流。
第4圖圖示根據本技術的實施例的適配器220的示意性的部分的俯視圖。如同先前描述者，第一中央通道219可從適配器220的第一端217延伸，且可部分地穿過該適配器延伸。該適配器可界定中央通道的底部，該底部可具有圓柱形的輪廓，且可過渡至朝向第二端延伸通過適配器的複數個孔(如同在前文中論述者)。類似於孔214，孔225可圍繞通過適配器220的中心軸分佈，且可圍繞中心軸等距離地設置。適配器220可界定：通過適配器的任何數目的孔，且在一些實施例中可界定比在隔離器215中更多的孔。額外的孔可以增加與加入的前驅物的混合。如同先前所述者，混合通道可將額外的前驅物朝向適配器的第一端傳遞，並且傳遞至第一中央通道219。在此實施例中，第4圖和第5圖的圖示將會反過來。
第5圖圖示根據本技術的一些實施例的通過第2圖的線段A-A的適配器220的示意性的橫截面圖。第5圖可示例說明：通過第二中央通道221的圖示，其可圖示通過先前描述的第二部分226的混合通道的出口。如同示例說明者，第二部分226可在孔225之間延伸，且可沿著適配器220的中心軸朝向適配器的第二端延伸。此外，如同在前文中所述者，在第二部分226朝向第一中央通道219延伸的實施例中，第4圖和第5圖的圖示將會反過來，並且來自遠端電漿單元的混合的前驅物和經由在適配器220中的埠口引入的前驅物將會從預混合的孔225離開。
第6圖圖示根據本技術的一些實施例的混合歧管235的示意性的透視圖。如同先前所述者，混合歧管235可界定：通過混合歧管的中央通道238，該中央通道可將混合的前驅物從適配器傳送至處理腔室。混合歧管235亦可包含：數個特徵，該等特徵允許：將可與先前混合的前驅物混合的額外的前驅物引入。如同先前描述者，一或多個埠口239可提供用於將前驅物引入混合歧管235的通路。埠口239可進入如同在第2圖中示例說明的通道，該通道可延伸至界定在混合歧管235的第一表面236中的溝槽中的一或多者。
溝槽可被界定在混合歧管235的第一表面236中，其中當混合歧管與先前論述的間隔件230耦接時，該等溝槽可形成至少部分地隔離的通道。第一溝槽240可圍繞中央通道238來形成。第一溝槽240可為環形的，且可藉由相對於通過混合歧管235的中心軸的內半徑，以及外半徑來表徵。內半徑可由第一內側壁605來界定，該第一內側壁可界定延伸穿過混合歧管235的中央通道238的頂部部分。第一溝槽240的外半徑可由第一外側壁610來界定，該第一外側壁可從第一內側壁605徑向向外定位。第一溝槽240可提供通往穿過第一內側壁605的中央通道238的流體通路。舉例而言，第一內側壁605可界定：穿過第一內側壁605的數個孔606。孔606可圍繞第一內側壁605分佈，以提供用於將額外的前驅物傳遞至中央通道238的多個進入位置。
第一內側壁605可藉由從第一表面236朝向第一溝槽240的斜面或倒角面來表徵。在實施例中，可以形成具有倒角的輪廓，該具有倒角的輪廓可沿著第一表面236保持第一內側壁605的至少一部分，該第一表面可用於與先前論述的間隔件230耦接。倒角亦可提供另外的橫向的間距以避免跨越在第一溝槽240與中央通道238之間的第一表面的洩漏。孔606可被界定為穿過倒角部分，且可以一角度(例如，以與倒角部分的平面呈現為垂直的直角，或以通過第一內側壁605的一些其他的角度)來界定。
混合歧管235可界定第二溝槽241，該第二溝槽從第一溝槽240徑向向外形成。在一些實施例中，第二溝槽241亦可為環形的，且中央通道238、第一溝槽240及第二溝槽241可圍繞通過混合歧管235的中心軸同心地對準。第二溝槽241可藉由先前描述的通道243與埠口239流體地耦接。通道243可延伸至在第二溝槽241內的一或多個位置，且可從溝槽的底部進入第二溝槽241(雖然在其他的實施例中通道243可經由溝槽的側壁進入溝槽241)。藉由從第二溝槽241的下方進入，第二溝槽241的深度可以被最小化，此可以減小形成的通道的所佔的空間，並且可以限制被傳遞的前驅物的擴散以增加傳遞的均勻性。
第二溝槽241可被界定在第一外側壁610(該第一外側壁可替代性地為第二內側壁)與外半徑(該外半徑是由混合歧管235的主體來界定)之間。在實施例中，第一外側壁610可沿著混合歧管235的第一表面236來界定第一溝槽240和第二溝槽241中的每一者。類似於第一內側壁605的輪廓，第一外側壁610亦可藉由在第一外側壁靠近第二溝槽241的一側上而沿著第一表面236的斜面或倒角面來表徵。第一外側壁610亦可界定：複數個孔608，該等孔被界定為穿過壁以提供在第二溝槽241與第一溝槽240之間的流體通路。類似於穿過第一內側壁605的孔，孔608可被界定為位於沿著第一外側壁610的任何地方(或穿過第一外側壁610)，且可被界定為穿過倒角部分。因此，經由埠口239傳遞的前驅物可流入第二溝槽241、可通過孔608進入第一溝槽240，及可通過孔606進入中央通道238，其中前驅物可與被傳遞通過適配器220的前驅物混合。
孔608可包含：被界定為通過第一外側壁610的任何數目的孔，且孔606可包含：被界定為通過第一內側壁605的任何數目的孔。在一些實施例中，穿過每個壁的孔的數目可以不相同。舉例而言，在一些實施例中，穿過第一內側壁605的孔606的數目可大於穿過第一外側壁的孔608的數目，且在一些實施例中，孔606的數目可以是孔608的數目的兩倍或者更多。此外，孔608可相對於孔606徑向地偏移，以使得：沒有任何的孔經由從混合歧管235的中心軸延伸的半徑與任何的孔606成一直線。此類孔和通道設計可提供通過混合歧管的遞迴的流動，從而改善了將額外的前驅物傳遞至中央通道238的過程，且可經由每個孔606提供更為均勻的傳遞。混合歧管235亦可界定額外的溝槽615，該等溝槽可位於第二溝槽241的徑向向外之處，且可經配置以容納彈性元件或o形環。
第7圖圖示根據本技術的一些實施例的通過第6圖的線段B-B的混合歧管235的示意性的橫截面圖。橫截面示例說明了孔608(因為它們被界定為通過第一外側壁610以提供從第二溝槽241至第一溝槽240的流體通路)。此外，第7圖示例說明一些實施例，其中孔608經由第一外側壁彼此間隔開整個直徑。孔608的間隔也大致上相同，所以埠口239在兩個孔608之間等距離地間隔開。先前描述的通道243可以在類似的位置處進入第二溝槽241而與每個孔608相距相同或大致上相同的距離。
第8圖圖示根據本技術的一些實施例的通過第6圖的線段C-C的混合歧管235的示意性的橫截面圖。橫截面示例說明孔606(因為它們被界定為通過第一內側壁605以提供從第一溝槽240至中央通道238的流體通路)。孔606和孔608可分別地延伸通過第一內側壁和第一外側壁的倒角部分，並且可以垂直於倒角的角度的一角度，或以一些其他的傾斜角度來延伸。藉由包含通過例如為第一外側壁610的特徵的傾斜角度，傳遞可提供在前驅物上升以流動通過下一組的孔之前進一步地分配前驅物的流動。此也可能限制形成孔，或以其他的方式損壞第一表面236的機械加工效果。混合歧管235可提供一種設計，該設計提供前驅物與延伸通過中央通道238的一或多個前驅物的更為均勻的混合。
如同先前解釋者，用於併入多個前驅物的組件可包含：一或多個擋板(例如，在前文中描述的第一擋板229和/或第二擋板249)。被傳遞通過系統的前驅物可以在相對較低的壓力下傳遞，前述者可以在層流中提供前驅物。此可以減少當傳遞前驅物時的混合，前述者可能會影響在基板級別執行的製程。舉例而言，在沒有充分地混合前驅物以提供所有的前驅物的均勻的傳遞的情況下，則可能無法在整個基板上均勻地發生蝕刻、沉積，或其他的製程。因此，一些實施例可包含一或多個擋板以促進前驅物的混合，而使得所提供的材料在其進入處理腔室時更均勻地分佈。
然而，併入額外的組件可能會影響通過系統的壓力降，此可能會影響在遠端電漿單元中的電漿產生。舉例而言，在腔室中的處理條件可經配置以在相對較低的壓力下(例如，低於或大約50Torr)操作，且可經配置以在低於或大約30Torr、低於或大約20Torr、低於或大約10Torr、低於或大約5Torr、低於或大約3Torr，或更低的壓力下操作。向上移動通過腔室的組件和遠端電漿單元堆疊可能會增加在遠端電漿單元處的壓力，其中每個組件可能會增加額外的壓力降。因此，在遠端電漿單元處的壓力可能高於在腔室中的操作壓力。
當在單元處的操作條件低於特定的臨界壓力時，遠端電漿單元可進行操作以引燃電漿，其中該壓力可為在前文中的識別的壓力中的任何者，或低於包含在前文中的範圍中的任何者中的任何的特定的壓力。若在處理區域與電漿單元之間併入太多的組件，在組件群更上方之處壓力可能更高，並且在某些情況下，由於高於臨界值的壓力的緣故，可能不會產生電漿。儘管在某些情況下可在處理區域內減低操作壓力以適應此種影響，但是進一步地減低腔室壓力可能會對於製程操作產生不利的影響。在一些配置中，根據與腔室一起操作的泵送系統，減低腔室壓力可能不可行。因此，根據本技術的一些實施例的擋板可經配置以產生跨越擋板的低於5Torr或大約5Torr的壓力降，同時增加前驅物的混合，且在一些實施例中可經配置以產生低於3Torr(或大約3Torr)、低於2Torr(或大約2Torr)、低於1Torr(或大約1Torr)、低於0.5Torr(或大約0.5Torr)，或在一些實施例中更低的壓力降。
為了要促進混合，同時將在整個擋板上的壓力影響最小化，根據本技術的一些實施例的擋板可藉由一或多個孔輪廓來表徵。舉例而言，根據本技術的實施例的擋板可界定：穿過板的一或多個孔，並且實際上可包含：可增加前驅物的停留時間，或產生一定量的混合，同時限制在整個板上的壓力降，或基於系統配置將壓力降保持在臨界值以下，而將在遠端電漿單元處的壓力保持在可能形成電漿的臨界值以下的任何的孔輪廓。
根據本技術的一些實施例的系統可包含：一或多個擋板，該等擋板可包含：如同先前示例說明的二個擋板。擋板的數目和板的孔輪廓可由以下所述者來決定：跨越堆疊的組成的組件的總壓力降，以及由當使用時該等板中的一者或二者所產生的影響。舉例而言，擋板或板可將在混合歧管處或在腔室入口處的前驅物分佈的不均勻性減低至小於10%(或大約10%)，且在一些實施例中可將不均勻性減低至小於9%(或大約9%)、小於8%(或大約8%)、小於7%(或大約7%)、小於6%(或大約6%)、小於5%(或大約5%)、小於4%(或大約4%)、小於3%(或大約3%)、小於2%(或大約2%)、小於1%(或大約1%)，或更小，其中不均勻性為零的情況可能與前驅物的完全的均勻的混合相關。
由本技術所涵蓋的示例性的系統可包含：第一擋板或第二擋板中的任一個，以及在一些實施例中該系統可包含：第一擋板或第二擋板中的二者。當包含兩個擋板時，板可藉由相同或不同的孔輪廓和/或材料來表徵。舉例而言，擋板中的任一個或二者可由先前所述的任何的材料製成，該等材料包含：一或多個金屬(該等金屬包含塗覆的金屬(例如，鎳-塗覆的鋁)，或陶瓷。可使用任何的其他的材料，該等材料可對於被傳遞的前驅物中的一或多個具有抵抗性。此外，擋板可由與組件相類似或不同的材料製成，其中擋板嵌入於該組件中。舉例而言，第一擋板229可使用與適配器220相同或不同的材料，且第二擋板249可使用與混合歧管235相同或不同的材料。
類似地，任一個擋板可藉由任何的數目的孔輪廓來表徵，該等孔輪廓可執行一或多種作用(例如，增加前驅物的停留時間、使得前驅物流動通過特定的樣式，或引起前驅物的特定的移動)。此些態樣中的任何者可增加前驅物的混合以減低混合物的不均勻性。在一些實施例中，一個或兩個擋板可為(或可包含)：多孔介質，其中在該多孔介質中不存在任何的特定的孔輪廓，但是多孔介質可以使得停留時間增加，此可使得混合得到改善。該介質可具有一孔隙率，該孔隙率被配置成致使預先決定的壓力降增加，此可以改善混合，同時將在遠端電漿單元處的壓力降保持在臨界值以下而點燃電漿。
任一個擋板可包含：從第一表面界定的一或多個孔，該第一表面可為上游表面，其通過與第一表面相對的第二表面，且該第二表面可為下游表面。擋板可具有在整個擋板上分佈的一或多個孔。舉例而言，任何的擋板可包含：被界定為穿過擋板的一或多個大致上為圓柱形的孔，且該等孔可相似於示例說明於第3圖至第5圖中的輪廓。舉例而言，擋板可具有被界定在示例說明的樣式中的複數個孔，該等孔可與相鄰的組件的鄰近的樣式對準，或可利用不同的樣式來引起阻塞，從而可以促進混合。此外，孔可形成有任何其他的輪廓(例如，在第9圖中示例說明者)。第9A圖至第9D圖圖示根據本技術的一些實施例的示例性的擋板900的示意性的平面圖。應理解到示例說明的孔輪廓並非意欲限制根據本技術的實施例的擋板，而是僅意欲圖示由本技術涵蓋的各種孔輪廓中的一些者。
第9A圖和第9B圖示例說明：藉由三角形的輪廓來表徵的孔，該等三角形的輪廓具有圓角以促進製造。該兩個圖像意欲示例說明：在示例性的擋板中的孔可被設置為在通過擋板的中心軸附近(例如，第9B圖中的孔920)，以及從中心軸徑向向外(例如，利用第9A圖的孔910來示例說明)。應理解到類似地涵蓋了任何的其他的孔形狀，其中包含了圓形的孔輪廓、淚滴狀的孔輪廓，或任何的其他的可製造的孔輪廓。因此，利用示例說明於第9A圖中的輪廓，流入擋板的前驅物可以在中心處集中，前述者可促進混合。此外，利用示例說明於第9B圖中的輪廓，流入擋板的前驅物可能會撞擊到中間的屏障，並在通過擋板之前向外擴散，此可增加停留時間和在擋板處的混合。可以選擇孔的方向以適應來自相鄰的組件的上游孔輪廓。舉例而言，利用具有徑向向外分佈的孔的上游組件，更為集中的分佈可被利用於擋板，此可以改善混合。可類似地使用上游/下游孔分佈的任何的其他的組合，此可提供改善的混合，同時限制對於壓力降的影響。如同先前所述者，儘管在圖式中分別地示例說明六個和三個孔，應理解到在本技術的實施例中可以使用任何數目的孔或孔尺寸。
擋板亦可包含：孔，該等孔可類似於穿過擋板的通道，並且可影響穿過擋板的分佈。舉例而言，第9C圖和第9D圖示例說明：孔輪廓930和940，該等孔輪廓經配置以提供一定的氣體旋轉量，該等氣體通過擋板而分佈，並且該等孔輪廓可影響通過擋板的流動。圖式圖示可以使用任何的尺寸或分佈的孔，該等孔可影響停留時間或保持特定的通過擋板的傳導。如同示例說明者，可形成通過擋板的通道，該通道從在擋板的一個表面處的入口延伸至在擋板的相對的表面處的出口。出口可相對於所顯示的入口徑向偏移，此可以引起一定的前驅物旋轉量，且可以改善組件的混合。徑向偏移可以使得垂直於擋板的表面並且延伸穿過孔的入口的中心的軸可以不穿過孔的出口的中心，並且可以依據偏移量而完全地不延伸通過出口。可以包含任何的偏移量，其中較大的偏移可增加前驅物的旋轉量，此可增加混合。
當包含兩個擋板時，可以使用任何的兩個孔輪廓。舉例而言，一個擋板可包含：旋轉通道，而另一個擋板可包含：直孔。此外，一個擋板可包含：經配置以引起在第一方向上的旋轉的旋轉通道，而第二擋板可包含：經配置以引起在相反的方向上的旋轉的旋轉通道。可以理解到可利用任何數目的組合，並且該等組合被本技術所涵蓋。在一些實施例中，藉由包含一或多個擋板，混合的前驅物的不均勻性可被減低，並且可被大致上或實質上消除。
第10圖根據本技術的一些實施例來顯示：傳遞前驅物通過處理腔室的方法1000的操作。方法1000可在系統200中執行，並且可允許在腔室外面的改善的前驅物混合，同時保護組件以免受到蝕刻劑的損害。雖然腔室的組件可能暴露於可能隨著時間造成磨損的蝕刻劑，本技術可對於此些組件作出限制而使其成為可以更容易更換和維修的組件。舉例而言，本技術可限制遠端電漿單元的內部組件的暴露，此可允許特定的保護被應用於遠端電漿單元。
方法1000可包含以下步驟：形成含氟的前驅物的遠端電漿(在操作1005中)。前驅物可被傳遞至遠端電漿單元，而使其解離以產生電漿流出物。在實施例中，遠端電漿單元可被塗覆或內襯有可承受與含氟的流出物的接觸的氧化物或其他的材料。在實施例中，除了載氣之外，沒有任何的其他的蝕刻前驅物可被傳遞通過遠端電漿單元，此可以保護單元而不受到損壞，並且允許調整電漿功率以提供前驅物的特定的解離，此可能對於正在執行的特定的製程是有益的。經配置以產生不同的蝕刻劑的電漿流出物的其他的實施例可以內襯有對於該前驅物或前驅物的組合可呈現惰性的不同的材料。
在操作1010處，含氟的前驅物的電漿流出物可流入與遠端電漿單元耦接的適配器。在操作1015處，含氫的前驅物可流入適配器。適配器可經配置以提供在適配器內的含氟的前驅物和含氫的前驅物的混合，以產生第一混合物(在操作1020處)，此可以通過如同先前描述的擋板來進行進一步的混合。在操作1025處，第一混合物可從適配器流入混合歧管。在操作1030處，第三前驅物可流入混合歧管。第三前驅物可包含額外的含氫的前驅物、額外的含鹵素的前驅物，或前驅物的其他的組合。混合歧管可經配置以執行第三前驅物與第一混合物的第二階段的混合，此可以產生第二混合物1035。
接續地，包含所有的三種前驅物的第二混合物可從混合歧管被傳遞至半導體處理腔室(儘管前驅物可以可選擇地通過如同在前文中描述的額外的擋板)。如同先前論述者，在別處描述的額外的元件可被使用以控制蝕刻劑的傳遞和分佈。應理解到所識別的前驅物僅為使用於所描述的腔室的適合的前驅物的實例。在整個揭露中論述的腔室和材料可被使用於任何的數目的其他的處理操作，該等處理操作可受益於以下所述者：分離前驅物並在傳遞至處理腔室之前將該等前驅物混合。
在前面的描述中，為了達到解釋的目的，已經闡述了許多的細節，以為了提供本技術的各種實施例的理解。然而，對於習知技藝者而言將為顯而易的是，可以在沒有此些細節中的一些者或具有額外的細節的情況下實施某些實施例。
已經揭示了數個實施例，彼些習知技藝者將認識到在不偏離實施例的精神的情況下，可以使用各種修改、替代性的構造，及等效者。此外，為了避免不必要地混淆本技術，沒有描述許多的習知的製程和元件。因此，前文的描述不應被認為是限制技術的範疇。
在提供一數值範圍的情況下，應理解的是，除非上下文另外明確地指出，在此範圍的上限與下限之間的每個中間值至下限單位的最小分數亦被特定地揭示。將在陳述的範圍中的任何的陳述的數值或未陳述的中間值與在該陳述的範圍中的任何其他的陳述的數值或未陳述的中間值之間的任何的較窄的範圍涵蓋在內。彼些較小的範圍的上限和下限可以獨立地包含在範圍中，或排除在該範圍之外，並且在其較小的範圍中包含任一個限制值、不包含任何的限制值，或包含兩個限制值的每個範圍亦被涵蓋在技術內(其受到在陳述的範圍中的任何的特定排除的限制值的限制)。在陳述的範圍包含限制值中的一者或兩者的情況中，排除彼些包含的限制值中的任一者或兩者的範圍亦包含在內。
如同在本文中和在隨附的申請專利範圍中使用者，單數形式「一(a)」、「一個(an)」及「該(the)」包含：複數引用(除非上下文另外清楚地指出)。因此，例如，對於「一層(a layer)」的引用包含：複數個此類層，及對於「該前驅物(the precursor)」的引用包含：對於彼些習知技藝者已知的一或多個前驅物和其等效者的引用等等。
此外，當在此說明書中和在後續的申請專利範圍中使用時，詞語「包含(comprise)」、「包含(comprising)」、「包含有(contain)」、「包含有(containing)」、「包括(include)」及「包括(including)」意欲指定陳述的特徵、整數、組件或操作的存在，但是它們不排除一或多個其他的特徵、整數、組件、操作、動作或組的存在或增加。
100:處理系統 102:前開式晶圓傳送盒 104:機械手臂 106:低壓保持區域 108a:基板處理腔室 108b:基板處理腔室 180c:基板處理腔室 108d:基板處理腔室 108e:基板處理腔室 108f:基板處理腔室 109a:串聯部分 109b:串聯部分 109c:串聯部分 110:機械手臂 200:系統 205:處理腔室 210:遠端電漿單元 211:第一端 212:第二端 213:通道 214:孔 215:隔離器 217:第一端 218:第二端 219:中央通道 220:適配器 221:中央通道 222:埠口 223:混合通道 224:第一部分 225:孔 226a:第二部分 226b:第二部分 227:溝槽 228:溝槽 229:第一擋板 230:間隔件 232:中央孔 235:混合歧管 236:第一端 237:第二端 238:中央通道 239:埠口 240:第一溝槽 241:第二溝槽 242:第一部分 243:通道 246:擴口部分 247:出口 248:加熱器 249:第二擋板 250:氣體箱 252:入口 253:第一表面 254:中央通道 255:第二表面 257:空間 258:空間 260:阻擋板 263:孔 265:凸起的環形部分 266:降低的環形部分 270:面板 272:第一表面 273:突出部分 274:第二表面 275:第三空間 280:離子抑制元件 290:蓋間隔件 605:第一內側壁 606:孔 608:孔 610:第一外側壁 615:溝槽 900:擋板 910:孔 920:孔 930:孔輪廓 940:孔輪廓 1000:方法 1005:操作 1010:操作 1015:操作 1020:操作 1025:操作 1030:操作 1035:操作
可藉由參照說明書的其餘的部分和圖式來實現對於所揭示的技術的本質和優點的進一步的理解。
第1圖圖示根據本技術的一些實施例的示例性的處理系統的俯視圖。
第2圖圖示根據本技術的一些實施例的示例性的處理腔室的示意性的橫截面圖。
第3圖圖示根據本技術的一些實施例的隔離器的示意性的部分的底部平面圖。
第4圖圖示根據本技術的一些實施例的適配器的示意性的部分的俯視圖。
第5圖圖示根據本技術的一些實施例的通過第2圖的線段A-A的適配器的示意性的橫截面圖。
第6圖圖示根據本技術的一些實施例的混合歧管的示意性的透視圖。
第7圖圖示根據本技術的一些實施例的通過第6圖的線段B-B的混合歧管的示意性的橫截面圖。
第8圖圖示根據本技術的一些實施例的通過第6圖的線段C-C的混合歧管的示意性的橫截面圖。
第9A圖至第9D圖圖示根據本技術的一些實施例的示例性的擋板的示意性的平面圖。
第10圖根據本技術的一些實施例來圖示傳遞前驅物通過處理系統的方法的操作。
圖式中的一些者作為示意圖被包含在內。應理解到圖式是用於達到示例說明性的目的，而不應被認為是按照比例繪製的(除非特別說明是按比例繪製的)。此外，作為示意圖，圖式被提供以幫助理解，並且相較於實際的表示可能不包含所有的態樣或資訊，且可能包含放大的材料以達到示例說明性的目的。
在隨附的圖式中，類似的組件和/或特徵可具有相同的參照標記。此外，相同類型的各個組件可以藉由在參照標記後面加上一個字母來加以區別(其中該字母在類似的組件之間作出區別)。若在說明書中僅使用最前面的參照標記，則該描述適用於具有相同的最前面的參照標記的類似的組件中的任何一個，而與字母無關。
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無
200:系統
205:處理腔室
210:遠端電漿單元
211:第一端
212:第二端
213:通道
214:孔
215:隔離器
217:第一端
218:第二端
219:中央通道
220:適配器
221:中央通道
222:埠口
223:混合通道
224:第一部分
225:孔
226:第二部分
226a:第二部分
226b:第二部分
227:溝槽
228:溝槽
229:第一擋板
230:間隔件
232:中央孔
235:混合歧管
236:第一端
237:第二端
238:中央通道
239:埠口
240:第一溝槽
241:第二溝槽
242:第一部分
243:通道
246:擴口部分
247:出口
248:加熱器
249:第二擋板
250:氣體箱
252:入口
253:第一表面
254:中央通道
255:第二表面
257:空間
258:空間
260:阻擋板
263:孔
265:凸起的環形部分
266:降低的環形部分
270:面板
272:第一表面
273:突出部分
274:第二表面
275:第三空間
280:離子抑制元件
290:蓋間隔件

Claims (20)

  1. 一種處理系統，包含： 一處理腔室； 一遠端電漿單元，該遠端電漿單元與該處理腔室耦接； 一擋板，該擋板併入於該處理腔室與該遠端電漿單元之間；及 一混合歧管，該混合歧管耦接在該遠端電漿單元與該處理腔室之間，其中該混合歧管是藉由一第一端和與該第一端相對的一第二端來表徵，其中該混合歧管與該處理腔室相耦接於該第二端處，其中該混合歧管界定穿過該混合歧管的一中央通道，其中該混合歧管沿著該混合歧管的一外部來界定一埠口，其中該埠口與界定在該混合歧管的該第一端內的一第一溝槽流體地耦接，其中該第一溝槽是藉由在一第一內側壁處的一內半徑和一外半徑來表徵，且其中該第一溝槽提供通往穿過該第一內側壁的該中央通道的流體通路。
  2. 如請求項1所述之處理系統，其中該混合歧管進一步包含：一第二溝槽，該第二溝槽界定在該混合歧管的該第一端內，其中該第二溝槽從該第一溝槽徑向向外定位，其中該埠口與該第二溝槽流體地耦接，其中該第二溝槽是藉由在一第二內側壁處的一內半徑來表徵，其中該第二內側壁進一步界定該第一溝槽的該外半徑，並且其中該第二內側壁界定複數個孔，該等孔被界定為穿過該第二內側壁和提供通往該第一溝槽的流體通路。
  3. 如請求項1所述之處理系統，其中該擋板被設置在該混合歧管的上游處。
  4. 如請求項3所述之處理系統，其中該擋板是一第一擋板，且其中該處理系統進一步包含：一第二擋板，該第二擋板設置在該混合歧管的下游處。
  5. 如請求項4所述之處理系統，其中該第一擋板和該第二擋板各自界定一或多個孔，且其中該第一擋板是藉由與該第二擋板不同的一孔輪廓來表徵。
  6. 如請求項3所述之處理系統，其中該擋板界定穿過該擋板的複數個孔，其中該複數個孔中的每個孔從作為一入口的該擋板的一第一表面通過作為一出口的與該擋板的該第一表面相對的該擋板的一第二表面來界定，且其中該出口圍繞垂直於該擋板且延伸通過該入口的一軸而相對於該入口徑向地偏移以界定穿過每個孔的一旋轉通道。
  7. 如請求項3所述之處理系統，其中該擋板包含：陶瓷或塗覆的鋁。
  8. 如請求項1所述之處理系統，進一步包含：一隔離器，該隔離器被耦接在該混合歧管與該遠端電漿單元之間，其中該隔離器包含：一陶瓷。
  9. 如請求項1所述之處理系統，進一步包含：一適配器，該適配器耦接在該混合歧管與該遠端電漿單元之間。
  10. 如請求項9所述之處理系統，其中該適配器是藉由一第一端和與該第一端相對的一第二端來表徵，其中該適配器界定一中央通道，該中央通道部分地穿過該適配器延伸，其中該適配器界定穿過該適配器的一外部的一埠口，其中該埠口與被界定在該適配器內的一混合通道流體地耦接，且其中該混合通道與該中央通道流體地耦接。
  11. 如請求項10所述之處理系統，其中該擋板位於被界定在該適配器的該第二端中的一凹部中。
  12. 如請求項9所述之處理系統，進一步包含：設置在該適配器與該混合歧管之間的一間隔件。
  13. 一種處理系統，包含: 一遠端電漿單元； 一處理腔室，該處理腔室包含： 一氣體箱，該氣體箱界定一中央通道， 一阻擋板，該阻擋板與該氣體箱耦接，其中該阻擋板界定穿過該阻擋板的複數個孔，及 一面板，該面板與該阻擋板相耦接於該面板的一第一表面處； 一擋板；及 一混合歧管，該混合歧管與該氣體箱耦接，其中該混合歧管是藉由一第一端和與該第一端相對的一第二端來表徵，其中該混合歧管與該處理腔室相耦接於該第二端處，其中該混合歧管界定穿過該混合歧管的一中央通道，該混合歧管與被界定為穿過該氣體箱的該中央通道流體地耦接，其中該混合歧管沿著該混合歧管的一外部界定一埠口，其中該埠口與被界定在該混合歧管的該第一端內的一第一溝槽流體地耦接，其中該第一溝槽是藉由在一第一內側壁處的一內半徑和一外半徑來表徵，且其中該第一溝槽提供通往穿過該第一內側壁的該中央通道的流體通路。
  14. 如請求項13所述之處理系統，進一步包含：一加熱器，該加熱器圍繞耦接至該氣體箱的一混合歧管而在外部耦接至該氣體箱。
  15. 如請求項13所述之處理系統，其中該擋板是設置在該混合歧管的上游處的一第一擋板，且其中該處理系統進一步包含：設置在該混合歧管的下游處的一第二擋板，且位於被界定該混合歧管的該第二端中的一凹部中。
  16. 如請求項13所述之處理系統，進一步包含：一適配器，該適配器與該遠端電漿單元耦接，其中該適配器是藉由一第一端和與該第一端相對的一第二端來表徵，其中該適配器界定一中央通道，該中央通道從該第一端至該適配器的一中點部分地穿過該適配器延伸，其中該適配器界定從該適配器的該中點朝向該適配器的該第二端延伸的複數個進入通道，且其中該複數個進入通道圍繞穿過該適配器的一中心軸徑向地分佈。
  17. 如請求項16所述之處理系統，其中該適配器界定穿過該適配器的一外部的一埠口，其中該埠口與被界定在該適配器內的一混合通道流體地耦接，且其中該混合通道穿過該適配器的一中央部分朝向該適配器的該第二端延伸。
  18. 如請求項16所述之處理系統，其中該適配器界定穿過該適配器的一外部的一埠口，其中該埠口與被界定在該適配器內的一混合通道流體地耦接，且其中該混合通道穿過該適配器的一中央部分朝向該適配器的該中點延伸以流體地進入由該適配器界定的該中央通道。
  19. 一種傳遞前驅物通過一處理系統的方法，該方法包含以下步驟: 在一遠端電漿單元中形成一含氟的前驅物的一電漿； 使得該含氟的前驅物的電漿流出物流入一適配器； 使得一含氫的前驅物流入該適配器； 將該含氫的前驅物與該電漿流出物混合以產生一第一混合物； 使得該第一混合物流入一混合歧管； 使得一第三前驅物流入該混合歧管；及 將該第三前驅物與該第一混合物混合以產生一第二混合物，其中該第一混合物或該第二混合物中的一者流動通過一擋板。
  20. 如請求項19所述之傳遞前驅物通過該處理系統的方法，其中一第一擋板併入於該混合歧管的上游處。
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Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) * 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
KR20230033101A (ko) * 2021-08-27 2023-03-08 삼성전자주식회사 플라즈마 발생 장치

Family Cites Families (1995)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2369620A (en) 1941-03-07 1945-02-13 Battelle Development Corp Method of coating cupreous metal with tin
US3451840A (en) 1965-10-06 1969-06-24 Us Air Force Wire coated with boron nitride and boron
US3401302A (en) 1965-11-01 1968-09-10 Humphreys Corp Induction plasma generator including cooling means, gas flow means, and operating means therefor
US3537474A (en) 1968-02-19 1970-11-03 Varian Associates Push button vacuum control valve and vacuum system using same
US3756511A (en) 1971-02-02 1973-09-04 Kogyo Kaihatsu Kenyusho Nozzle and torch for plasma jet
US3969077A (en) 1971-12-16 1976-07-13 Varian Associates Alkali metal leak detection method and apparatus
US4632857A (en) 1974-05-24 1986-12-30 Richardson Chemical Company Electrolessly plated product having a polymetallic catalytic film underlayer
US4232060A (en) 1979-01-22 1980-11-04 Richardson Chemical Company Method of preparing substrate surface for electroless plating and products produced thereby
US4397812A (en) 1974-05-24 1983-08-09 Richardson Chemical Company Electroless nickel polyalloys
US4006047A (en) 1974-07-22 1977-02-01 Amp Incorporated Catalysts for electroless deposition of metals on comparatively low-temperature polyolefin and polyester substrates
US3937857A (en) 1974-07-22 1976-02-10 Amp Incorporated Catalyst for electroless deposition of metals
US4341592A (en) 1975-08-04 1982-07-27 Texas Instruments Incorporated Method for removing photoresist layer from substrate by ozone treatment
US4190488A (en) 1978-08-21 1980-02-26 International Business Machines Corporation Etching method using noble gas halides
US4265943A (en) 1978-11-27 1981-05-05 Macdermid Incorporated Method and composition for continuous electroless copper deposition using a hypophosphite reducing agent in the presence of cobalt or nickel ions
US4234628A (en) 1978-11-28 1980-11-18 The Harshaw Chemical Company Two-step preplate system for polymeric surfaces
US4214946A (en) 1979-02-21 1980-07-29 International Business Machines Corporation Selective reactive ion etching of polysilicon against SiO2 utilizing SF6 -Cl2 -inert gas etchant
US4361441A (en) 1979-04-17 1982-11-30 Plasma Holdings N.V. Treatment of matter in low temperature plasmas
US4209357A (en) 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus
IT1130955B (it) 1980-03-11 1986-06-18 Oronzio De Nora Impianti Procedimento per la formazione di elettroci sulle superficie di membrane semipermeabili e sistemi elettrodo-membrana cosi' prodotti
US4361418A (en) 1980-05-06 1982-11-30 Risdon Corporation High vacuum processing system having improved recycle draw-down capability under high humidity ambient atmospheric conditions
NL8004005A (nl) 1980-07-11 1982-02-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US4340462A (en) 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
US4368223A (en) 1981-06-01 1983-01-11 Asahi Glass Company, Ltd. Process for preparing nickel layer
DE3205345A1 (de) 1982-02-15 1983-09-01 Philips Patentverwaltung Gmbh, 2000 Hamburg "verfahren zur herstellung von fluordotierten lichtleitfasern"
US4585920A (en) 1982-05-21 1986-04-29 Tegal Corporation Plasma reactor removable insert
JPS591671A (ja) 1982-05-28 1984-01-07 Fujitsu Ltd プラズマｃｖｄ装置
JPS59126778A (ja) 1983-01-11 1984-07-21 Tokyo Denshi Kagaku Kabushiki プラズマエツチング方法及びその装置
JPS59222922A (ja) 1983-06-01 1984-12-14 Nippon Telegr & Teleph Corp <Ntt> 気相成長装置
JPS6060060A (ja) 1983-09-12 1985-04-06 株式会社日立製作所 鉄道車両の扉開閉装置
US4579618A (en) 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
US4656052A (en) 1984-02-13 1987-04-07 Kyocera Corporation Process for production of high-hardness boron nitride film
US4656076A (en) 1985-04-26 1987-04-07 Triquint Semiconductors, Inc. Self-aligned recessed gate process
US4600464A (en) 1985-05-01 1986-07-15 International Business Machines Corporation Plasma etching reactor with reduced plasma potential
US4807016A (en) 1985-07-15 1989-02-21 Texas Instruments Incorporated Dry etch of phosphosilicate glass with selectivity to undoped oxide
US4610775A (en) 1985-07-26 1986-09-09 Westinghouse Electric Corp. Method and apparatus for clearing short-circuited, high-voltage cathodes in a sputtering chamber
JPS6245119A (ja) 1985-08-23 1987-02-27 Matsushita Electric Ind Co Ltd ドライエツチング装置
US4749440A (en) 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
US4668335A (en) 1985-08-30 1987-05-26 Advanced Micro Devices, Inc. Anti-corrosion treatment for patterning of metallic layers
US4690746A (en) 1986-02-24 1987-09-01 Genus, Inc. Interlayer dielectric process
US4715937A (en) 1986-05-05 1987-12-29 The Board Of Trustees Of The Leland Stanford Junior University Low-temperature direct nitridation of silicon in nitrogen plasma generated by microwave discharge
US5000113A (en) 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US5228501A (en) 1986-12-19 1993-07-20 Applied Materials, Inc. Physical vapor deposition clamping mechanism and heater/cooler
US4960488A (en) 1986-12-19 1990-10-02 Applied Materials, Inc. Reactor chamber self-cleaning process
US4951601A (en) 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
JPS63204726A (ja) 1987-02-20 1988-08-24 Anelva Corp 真空処理装置
US5322976A (en) 1987-02-24 1994-06-21 Polyonics Corporation Process for forming polyimide-metal laminates
DE3856483T2 (de) 1987-03-18 2002-04-18 Kabushiki Kaisha Toshiba, Kawasaki Verfahren zur Herstellung von Dünnschichten
US4793897A (en) 1987-03-20 1988-12-27 Applied Materials, Inc. Selective thin film etch process
US4786360A (en) 1987-03-30 1988-11-22 International Business Machines Corporation Anisotropic etch process for tungsten metallurgy
US5198034A (en) 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
DE3884653T2 (de) 1987-04-03 1994-02-03 Fujitsu Ltd Verfahren und Vorrichtung zur Gasphasenabscheidung von Diamant.
US4913929A (en) 1987-04-21 1990-04-03 The Board Of Trustees Of The Leland Stanford Junior University Thermal/microwave remote plasma multiprocessing reactor and method of use
JP2598019B2 (ja) 1987-06-01 1997-04-09 富士通株式会社 感光体の製造方法
US4753898A (en) 1987-07-09 1988-06-28 Motorola, Inc. LDD CMOS process
US4857140A (en) 1987-07-16 1989-08-15 Texas Instruments Incorporated Method for etching silicon nitride
US4820377A (en) 1987-07-16 1989-04-11 Texas Instruments Incorporated Method for cleanup processing chamber and vacuum process module
US4867841A (en) 1987-07-16 1989-09-19 Texas Instruments Incorporated Method for etch of polysilicon film
US4904621A (en) 1987-07-16 1990-02-27 Texas Instruments Incorporated Remote plasma generation process using a two-stage showerhead
US4828649A (en) 1987-07-16 1989-05-09 Texas Instruments Incorporated Method for etching an aluminum film doped with silicon
JPS6432627A (en) 1987-07-29 1989-02-02 Hitachi Ltd Low-temperature dry etching method
US4919750A (en) 1987-09-14 1990-04-24 International Business Machines Corporation Etching metal films with complexing chloride plasma
US4810520A (en) 1987-09-23 1989-03-07 Magnetic Peripherals Inc. Method for controlling electroless magnetic plating
US5180435A (en) 1987-09-24 1993-01-19 Research Triangle Institute, Inc. Remote plasma enhanced CVD method and apparatus for growing an epitaxial semiconductor layer
WO1989003587A1 (en) 1987-10-14 1989-04-20 The Furukawa Electric Co., Ltd. Method and apparatus for thin film formation by plasma cvd
US4981551A (en) 1987-11-03 1991-01-01 North Carolina State University Dry etching of silicon carbide
US4792378A (en) 1987-12-15 1988-12-20 Texas Instruments Incorporated Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor
JP2804037B2 (ja) 1988-02-05 1998-09-24 株式会社東芝 ドライエッチング方法
JPH01297141A (ja) 1988-05-25 1989-11-30 Canon Inc マイクロ波プラズマ処理装置
US4900856A (en) 1988-05-26 1990-02-13 Ethyl Corporation Preparation of metal halide-amine complexes
JPH029115A (ja) 1988-06-28 1990-01-12 Mitsubishi Electric Corp 半導体製造装置
JPH02114525A (ja) 1988-10-24 1990-04-26 Toshiba Corp 有機化合物膜の除去方法及び除去装置
JPH02114530A (ja) 1988-10-25 1990-04-26 Mitsubishi Electric Corp 薄膜形成装置
KR930004115B1 (ko) 1988-10-31 1993-05-20 후지쓰 가부시끼가이샤 애싱(ashing)처리방법 및 장치
EP0376252B1 (en) 1988-12-27 1997-10-22 Kabushiki Kaisha Toshiba Method of removing an oxide film on a substrate
US4985372A (en) 1989-02-17 1991-01-15 Tokyo Electron Limited Method of forming conductive layer including removal of native oxide
JP2823276B2 (ja) 1989-03-18 1998-11-11 株式会社東芝 Ｘ線マスクの製造方法および薄膜の内部応力制御装置
US4946903A (en) 1989-03-27 1990-08-07 The Research Foundation Of State University Of Ny Oxyfluoropolymers having chemically reactive surface functionality and increased surface energies
US5186718A (en) 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
US4987856A (en) 1989-05-22 1991-01-29 Advanced Semiconductor Materials America, Inc. High throughput multi station processor for multiple single wafers
US5061838A (en) 1989-06-23 1991-10-29 Massachusetts Institute Of Technology Toroidal electron cyclotron resonance reactor
US5270125A (en) 1989-07-11 1993-12-14 Redwood Microsystems, Inc. Boron nutride membrane in wafer structure
US4993358A (en) 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
US5013691A (en) 1989-07-31 1991-05-07 At&T Bell Laboratories Anisotropic deposition of silicon dioxide
US5028565A (en) 1989-08-25 1991-07-02 Applied Materials, Inc. Process for CVD deposition of tungsten layer on semiconductor wafer
US4994404A (en) 1989-08-28 1991-02-19 Motorola, Inc. Method for forming a lightly-doped drain (LDD) structure in a semiconductor device
US4980018A (en) 1989-11-14 1990-12-25 Intel Corporation Plasma etching process for refractory metal vias
EP0447155B1 (en) 1990-03-12 1995-07-26 Ngk Insulators, Ltd. Wafer heaters for use in semi-conductor-producing apparatus, heating units using such wafer heaters, and production of heaters
JP2960466B2 (ja) 1990-03-19 1999-10-06 株式会社日立製作所 半導体デバイスの配線絶縁膜の形成方法及びその装置
US5089441A (en) 1990-04-16 1992-02-18 Texas Instruments Incorporated Low-temperature in-situ dry cleaning process for semiconductor wafers
US5328810A (en) 1990-05-07 1994-07-12 Micron Technology, Inc. Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process
US5147692A (en) 1990-05-08 1992-09-15 Macdermid, Incorporated Electroless plating of nickel onto surfaces such as copper or fused tungston
US5069938A (en) 1990-06-07 1991-12-03 Applied Materials, Inc. Method of forming a corrosion-resistant protective coating on aluminum substrate
US5238499A (en) 1990-07-16 1993-08-24 Novellus Systems, Inc. Gas-based substrate protection during processing
US5083030A (en) 1990-07-18 1992-01-21 Applied Photonics Research Double-sided radiation-assisted processing apparatus
US5235139A (en) 1990-09-12 1993-08-10 Macdermid, Incorprated Method for fabricating printed circuits
US5074456A (en) 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
US5089442A (en) 1990-09-20 1992-02-18 At&T Bell Laboratories Silicon dioxide deposition method using a magnetic field and both sputter deposition and plasma-enhanced cvd
KR930011413B1 (ko) 1990-09-25 1993-12-06 가부시키가이샤 한도오따이 에네루기 겐큐쇼 펄스형 전자파를 사용한 플라즈마 cvd 법
DE69116058T2 (de) 1990-09-27 1996-08-22 At & T Corp Verfahren zur Herstellung integrierter Schaltungen
JPH04142738A (ja) 1990-10-04 1992-05-15 Sony Corp ドライエッチング方法
JPH04355917A (ja) 1990-10-12 1992-12-09 Seiko Epson Corp 半導体装置の製造装置
US5549780A (en) 1990-10-23 1996-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for plasma processing and apparatus for plasma processing
JPH0817171B2 (ja) 1990-12-31 1996-02-21 株式会社半導体エネルギー研究所 プラズマ発生装置およびそれを用いたエッチング方法
JP2640174B2 (ja) 1990-10-30 1997-08-13 三菱電機株式会社 半導体装置およびその製造方法
US5279705A (en) 1990-11-28 1994-01-18 Dainippon Screen Mfg. Co., Ltd. Gaseous process for selectively removing silicon nitride film
JP3206916B2 (ja) 1990-11-28 2001-09-10 住友電気工業株式会社 欠陥濃度低減方法、紫外線透過用光学ガラスの製造方法及び紫外線透過用光学ガラス
US5217559A (en) 1990-12-10 1993-06-08 Texas Instruments Incorporated Apparatus and method for in-situ deep ultraviolet photon-assisted semiconductor wafer processing
US5578130A (en) 1990-12-12 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Apparatus and method for depositing a film
EP0519079B1 (en) 1991-01-08 1999-03-03 Fujitsu Limited Process for forming silicon oxide film
JP2697315B2 (ja) 1991-01-23 1998-01-14 日本電気株式会社 フッ素含有シリコン酸化膜の形成方法
JP2787142B2 (ja) 1991-03-01 1998-08-13 上村工業 株式会社 無電解錫、鉛又はそれらの合金めっき方法
DE4107006A1 (de) 1991-03-05 1992-09-10 Siemens Ag Verfahren zum anisotropen trockenaetzen von aluminium bzw. aluminiumlegierungen enthaltenden leiterbahnebenen in integrierten halbleiterschaltungen
US5897751A (en) 1991-03-11 1999-04-27 Regents Of The University Of California Method of fabricating boron containing coatings
US5330578A (en) 1991-03-12 1994-07-19 Semiconductor Energy Laboratory Co., Ltd. Plasma treatment apparatus
US5290383A (en) 1991-03-24 1994-03-01 Tokyo Electron Limited Plasma-process system with improved end-point detecting scheme
JPH05508266A (ja) 1991-04-03 1993-11-18 イーストマン・コダック・カンパニー ＧａＡｓをドライエッチングするための高耐久性マスク
EP0511448A1 (en) 1991-04-30 1992-11-04 International Business Machines Corporation Method and apparatus for in-situ and on-line monitoring of a trench formation process
JPH04341568A (ja) 1991-05-16 1992-11-27 Toshiba Corp 薄膜形成方法及び薄膜形成装置
JP2699695B2 (ja) 1991-06-07 1998-01-19 日本電気株式会社 化学気相成長法
US5203911A (en) 1991-06-24 1993-04-20 Shipley Company Inc. Controlled electroless plating
US6077384A (en) 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US6074512A (en) 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US5279865A (en) 1991-06-28 1994-01-18 Digital Equipment Corporation High throughput interlevel dielectric gap filling process
JPH0521393A (ja) 1991-07-11 1993-01-29 Sony Corp プラズマ処理装置
JPH0562936A (ja) 1991-09-03 1993-03-12 Mitsubishi Electric Corp プラズマ処理装置およびプラズマクリーニング方法
US5240497A (en) 1991-10-08 1993-08-31 Cornell Research Foundation, Inc. Alkaline free electroless deposition
US5318668A (en) 1991-10-24 1994-06-07 Matsushita Electric Industrial Co., Ltd. Dry etching method
JPH05226480A (ja) 1991-12-04 1993-09-03 Nec Corp 半導体装置の製造方法
US5279669A (en) 1991-12-13 1994-01-18 International Business Machines Corporation Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions
US5290382A (en) 1991-12-13 1994-03-01 Hughes Aircraft Company Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films
US5352636A (en) 1992-01-16 1994-10-04 Applied Materials, Inc. In situ method for cleaning silicon surface and forming layer thereon in same chamber
US5300463A (en) 1992-03-06 1994-04-05 Micron Technology, Inc. Method of selectively etching silicon dioxide dielectric layers on semiconductor wafers
JP3084497B2 (ja) 1992-03-25 2000-09-04 東京エレクトロン株式会社 ＳｉＯ２膜のエッチング方法
JP2773530B2 (ja) 1992-04-15 1998-07-09 日本電気株式会社 半導体装置の製造方法
JP2792335B2 (ja) 1992-05-27 1998-09-03 日本電気株式会社 半導体装置の製造方法
US5274917A (en) 1992-06-08 1994-01-04 The Whitaker Corporation Method of making connector with monolithic multi-contact array
US5880036A (en) 1992-06-15 1999-03-09 Micron Technology, Inc. Method for enhancing oxide to nitride selectivity through the use of independent heat control
KR100293830B1 (ko) 1992-06-22 2001-09-17 리차드 에이치. 로브그렌 플라즈마 처리 쳄버내의 잔류물 제거를 위한 플라즈마 정결방법
US5286297A (en) 1992-06-24 1994-02-15 Texas Instruments Incorporated Multi-electrode plasma processing apparatus
US5534072A (en) 1992-06-24 1996-07-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing subtrates
US5252178A (en) 1992-06-24 1993-10-12 Texas Instruments Incorporated Multi-zone plasma processing method and apparatus
JP3688726B2 (ja) 1992-07-17 2005-08-31 株式会社東芝 半導体装置の製造方法
US5380560A (en) 1992-07-28 1995-01-10 International Business Machines Corporation Palladium sulfate solution for the selective seeding of the metal interconnections on polyimide dielectrics for electroless metal deposition
US5248371A (en) 1992-08-13 1993-09-28 General Signal Corporation Hollow-anode glow discharge apparatus
US5292370A (en) 1992-08-14 1994-03-08 Martin Marietta Energy Systems, Inc. Coupled microwave ECR and radio-frequency plasma source for plasma processing
US5271972A (en) 1992-08-17 1993-12-21 Applied Materials, Inc. Method for depositing ozone/TEOS silicon oxide films of reduced surface sensitivity
US5326427A (en) 1992-09-11 1994-07-05 Lsi Logic Corporation Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation
US5306530A (en) 1992-11-23 1994-04-26 Associated Universities, Inc. Method for producing high quality thin layer films on substrates
JP2809018B2 (ja) 1992-11-26 1998-10-08 日本電気株式会社 半導体装置およびその製造方法
KR100238629B1 (ko) 1992-12-17 2000-01-15 히가시 데쓰로 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치
US5500249A (en) 1992-12-22 1996-03-19 Applied Materials, Inc. Uniform tungsten silicide films produced by chemical vapor deposition
US5756402A (en) 1992-12-28 1998-05-26 Kabushiki Kaisha Toshiba Method of etching silicon nitride film
US5453124A (en) 1992-12-30 1995-09-26 Texas Instruments Incorporated Programmable multizone gas injector for single-wafer semiconductor processing equipment
US5624582A (en) 1993-01-21 1997-04-29 Vlsi Technology, Inc. Optimization of dry etching through the control of helium backside pressure
US5366585A (en) 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
US5345999A (en) 1993-03-17 1994-09-13 Applied Materials, Inc. Method and apparatus for cooling semiconductor wafers
US5302233A (en) 1993-03-19 1994-04-12 Micron Semiconductor, Inc. Method for shaping features of a semiconductor structure using chemical mechanical planarization (CMP)
JP3236111B2 (ja) 1993-03-31 2001-12-10 キヤノン株式会社 プラズマ処理装置及び処理方法
US5800686A (en) 1993-04-05 1998-09-01 Applied Materials, Inc. Chemical vapor deposition chamber with substrate edge protection
JP2664866B2 (ja) 1993-04-09 1997-10-22 インターナショナル・ビジネス・マシーンズ・コーポレイション 窒化ホウ素をエッチングする方法
US5416048A (en) 1993-04-16 1995-05-16 Micron Semiconductor, Inc. Method to slope conductor profile prior to dielectric deposition to improve dielectric step-coverage
EP0628644B1 (en) 1993-05-27 2003-04-02 Applied Materials, Inc. Improvements in or relating to susceptors suitable for use in chemical vapour deposition devices
US5591269A (en) 1993-06-24 1997-01-07 Tokyo Electron Limited Vacuum processing apparatus
US5292682A (en) 1993-07-06 1994-03-08 Eastman Kodak Company Method of making two-phase charge coupled device
US5413670A (en) 1993-07-08 1995-05-09 Air Products And Chemicals, Inc. Method for plasma etching or cleaning with diluted NF3
US5560779A (en) 1993-07-12 1996-10-01 Olin Corporation Apparatus for synthesizing diamond films utilizing an arc plasma
WO1995002900A1 (en) 1993-07-15 1995-01-26 Astarix, Inc. Aluminum-palladium alloy for initiation of electroless plating
EP0637063B1 (en) 1993-07-30 1999-11-03 Applied Materials, Inc. Method for depositing silicon nitride on silicium surfaces
US5483920A (en) 1993-08-05 1996-01-16 Board Of Governors Of Wayne State University Method of forming cubic boron nitride films
US5685946A (en) 1993-08-11 1997-11-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices
US5468597A (en) 1993-08-25 1995-11-21 Shipley Company, L.L.C. Selective metallization process
US5865896A (en) 1993-08-27 1999-02-02 Applied Materials, Inc. High density plasma CVD reactor with combined inductive and capacitive coupling
US5614055A (en) 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5384284A (en) 1993-10-01 1995-01-24 Micron Semiconductor, Inc. Method to form a low resistant bond pad interconnect
SE501888C2 (sv) 1993-10-18 1995-06-12 Ladislav Bardos En metod och en apparat för generering av en urladdning i egna ångor från en radiofrekvenselektrod för kontinuerlig självförstoftning av elektroden
US5505816A (en) 1993-12-16 1996-04-09 International Business Machines Corporation Etching of silicon dioxide selectively to silicon nitride and polysilicon
US5415890A (en) 1994-01-03 1995-05-16 Eaton Corporation Modular apparatus and method for surface treatment of parts with liquid baths
US5403434A (en) 1994-01-06 1995-04-04 Texas Instruments Incorporated Low-temperature in-situ dry cleaning process for semiconductor wafer
JP3188363B2 (ja) 1994-01-21 2001-07-16 エフエスアイ・インターナショナル・インコーポレーテッド 循環クーラントを用いた温度コントローラ及びそのための温度制御方法
US5399237A (en) 1994-01-27 1995-03-21 Applied Materials, Inc. Etching titanium nitride using carbon-fluoride and carbon-oxide gas
US5451259A (en) 1994-02-17 1995-09-19 Krogh; Ole D. ECR plasma source for remote processing
US5454170A (en) 1994-03-02 1995-10-03 Vlsi Technology Inc. Robot to pedestal alignment head
US5439553A (en) 1994-03-30 1995-08-08 Penn State Research Foundation Controlled etching of oxides via gas phase reactions
DE69531880T2 (de) 1994-04-28 2004-09-09 Applied Materials, Inc., Santa Clara Verfahren zum Betreiben eines CVD-Reaktors hoher Plasma-Dichte mit kombinierter induktiver und kapazitiver Einkopplung
US5468342A (en) 1994-04-28 1995-11-21 Cypress Semiconductor Corp. Method of etching an oxide layer
US6110838A (en) 1994-04-29 2000-08-29 Texas Instruments Incorporated Isotropic polysilicon plus nitride stripping
US5531835A (en) 1994-05-18 1996-07-02 Applied Materials, Inc. Patterned susceptor to reduce electrostatic force in a CVD chamber
US5628829A (en) 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
US5665640A (en) 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5580421A (en) 1994-06-14 1996-12-03 Fsi International Apparatus for surface conditioning
US5767373A (en) 1994-06-16 1998-06-16 Novartis Finance Corporation Manipulation of protoporphyrinogen oxidase enzyme activity in eukaryotic organisms
JPH088228A (ja) * 1994-06-20 1996-01-12 Fujitsu Ltd ドライエッチング装置
US5580385A (en) 1994-06-30 1996-12-03 Texas Instruments, Incorporated Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber
JP3501524B2 (ja) 1994-07-01 2004-03-02 東京エレクトロン株式会社 処理装置の真空排気システム
JP3411678B2 (ja) 1994-07-08 2003-06-03 東京エレクトロン株式会社 処理装置
US5592358A (en) 1994-07-18 1997-01-07 Applied Materials, Inc. Electrostatic chuck for magnetic flux processing
US5563105A (en) 1994-09-30 1996-10-08 International Business Machines Corporation PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element
JPH08107101A (ja) 1994-10-03 1996-04-23 Fujitsu Ltd プラズマ処理装置及びプラズマ処理方法
US5597439A (en) 1994-10-26 1997-01-28 Applied Materials, Inc. Process gas inlet and distribution passages
TW344897B (en) 1994-11-30 1998-11-11 At&T Tcorporation A process for forming gate oxides possessing different thicknesses on a semiconductor substrate
US5558717A (en) 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
CN1053764C (zh) 1994-12-09 2000-06-21 中国科学院微电子中心 束致变蚀方法
EP0795048B1 (en) 1994-12-19 2000-03-15 Alcan International Limited Cleaning aluminium workpieces
US5792376A (en) 1995-01-06 1998-08-11 Kabushiki Kaisha Toshiba Plasma processing apparatus and plasma processing method
US5772770A (en) 1995-01-27 1998-06-30 Kokusai Electric Co, Ltd. Substrate processing apparatus
JPH08279495A (ja) 1995-02-07 1996-10-22 Seiko Epson Corp プラズマ処理装置及びその方法
US5571576A (en) 1995-02-10 1996-11-05 Watkins-Johnson Method of forming a fluorinated silicon oxide layer using plasma chemical vapor deposition
US5670066A (en) 1995-03-17 1997-09-23 Lam Research Corporation Vacuum plasma processing wherein workpiece position is detected prior to chuck being activated
US6039851A (en) 1995-03-22 2000-03-21 Micron Technology, Inc. Reactive sputter faceting of silicon dioxide to enhance gap fill of spaces between metal lines
US5556521A (en) 1995-03-24 1996-09-17 Sony Corporation Sputter etching apparatus with plasma source having a dielectric pocket and contoured plasma source
JPH08264510A (ja) 1995-03-27 1996-10-11 Toshiba Corp シリコン窒化膜のエッチング方法およびエッチング装置
US5571577A (en) 1995-04-07 1996-11-05 Board Of Trustees Operating Michigan State University Method and apparatus for plasma treatment of a surface
JP3360098B2 (ja) 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
JP3270852B2 (ja) 1995-04-20 2002-04-02 東京エレクトロン株式会社 圧力調整装置及びこれを用いた部屋の連通方法
TW434745B (en) 1995-06-07 2001-05-16 Tokyo Electron Ltd Plasma processing apparatus
US20010028922A1 (en) 1995-06-07 2001-10-11 Sandhu Gurtej S. High throughput ILD fill process for high aspect ratio gap fill
JP3599204B2 (ja) 1995-06-08 2004-12-08 アネルバ株式会社 Ｃｖｄ装置
JP2814370B2 (ja) 1995-06-18 1998-10-22 東京エレクトロン株式会社 プラズマ処理装置
US5997962A (en) 1995-06-30 1999-12-07 Tokyo Electron Limited Plasma process utilizing an electrostatic chuck
US5968379A (en) 1995-07-14 1999-10-19 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability and related methods
US6022446A (en) 1995-08-21 2000-02-08 Shan; Hongching Shallow magnetic fields for generating circulating electrons to enhance plasma processing
US6197364B1 (en) 1995-08-22 2001-03-06 International Business Machines Corporation Production of electroless Co(P) with designed coercivity
US5755859A (en) 1995-08-24 1998-05-26 International Business Machines Corporation Cobalt-tin alloys and their applications for devices, chip interconnections and packaging
US6053982A (en) 1995-09-01 2000-04-25 Asm America, Inc. Wafer support system
US6228751B1 (en) 1995-09-08 2001-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US5719085A (en) 1995-09-29 1998-02-17 Intel Corporation Shallow trench isolation technique
US5716506A (en) 1995-10-06 1998-02-10 Board Of Trustees Of The University Of Illinois Electrochemical sensors for gas detection
JPH09106898A (ja) 1995-10-09 1997-04-22 Anelva Corp プラズマｃｖｄ装置、プラズマ処理装置及びプラズマｃｖｄ方法
US5635086A (en) 1995-10-10 1997-06-03 The Esab Group, Inc. Laser-plasma arc metal cutting apparatus
JPH09106899A (ja) 1995-10-11 1997-04-22 Anelva Corp プラズマｃｖｄ装置及び方法並びにドライエッチング装置及び方法
US5814238A (en) 1995-10-12 1998-09-29 Sandia Corporation Method for dry etching of transition metals
US5910340A (en) 1995-10-23 1999-06-08 C. Uyemura & Co., Ltd. Electroless nickel plating solution and method
US6015724A (en) 1995-11-02 2000-01-18 Semiconductor Energy Laboratory Co. Manufacturing method of a semiconductor device
US5599740A (en) 1995-11-16 1997-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Deposit-etch-deposit ozone/teos insulator layer method
US5648125A (en) 1995-11-16 1997-07-15 Cane; Frank N. Electroless plating process for the manufacture of printed circuit boards
US5846598A (en) 1995-11-30 1998-12-08 International Business Machines Corporation Electroless plating of metallic features on nonmetallic or semiconductor layer without extraneous plating
US5756400A (en) 1995-12-08 1998-05-26 Applied Materials, Inc. Method and apparatus for cleaning by-products from plasma chamber surfaces
US5733816A (en) 1995-12-13 1998-03-31 Micron Technology, Inc. Method for depositing a tungsten layer on silicon
US6261637B1 (en) 1995-12-15 2001-07-17 Enthone-Omi, Inc. Use of palladium immersion deposition to selectively initiate electroless plating on Ti and W alloys for wafer fabrication
EP0811083B1 (en) 1995-12-19 2000-05-31 FSI International Electroless deposition of metal films with spray processor
US5883012A (en) 1995-12-21 1999-03-16 Motorola, Inc. Method of etching a trench into a semiconductor substrate
US5679606A (en) 1995-12-27 1997-10-21 Taiwan Semiconductor Manufacturing Company, Ltd. method of forming inter-metal-dielectric structure
DE69623651T2 (de) 1995-12-27 2003-04-24 Lam Research Corp., Fremont Verfahren zur füllung von gräben auf einer halbleiterscheibe
WO1997024760A1 (fr) 1995-12-28 1997-07-10 Nippon Sanso Corporation Procede et dispositif de transfert de substrats en plaques minces
US5824599A (en) 1996-01-16 1998-10-20 Cornell Research Foundation, Inc. Protected encapsulation of catalytic layer for electroless copper interconnect
US5891513A (en) 1996-01-16 1999-04-06 Cornell Research Foundation Electroless CU deposition on a barrier layer by CU contact displacement for ULSI applications
US5674787A (en) 1996-01-16 1997-10-07 Sematech, Inc. Selective electroless copper deposited interconnect plugs for ULSI applications
US6036878A (en) 1996-02-02 2000-03-14 Applied Materials, Inc. Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna
US5872052A (en) 1996-02-12 1999-02-16 Micron Technology, Inc. Planarization using plasma oxidized amorphous silicon
US5648175A (en) 1996-02-14 1997-07-15 Applied Materials, Inc. Chemical vapor deposition reactor system and integrated circuit
US6004884A (en) 1996-02-15 1999-12-21 Lam Research Corporation Methods and apparatus for etching semiconductor wafers
US6200412B1 (en) 1996-02-16 2001-03-13 Novellus Systems, Inc. Chemical vapor deposition system including dedicated cleaning gas injection
TW335517B (en) 1996-03-01 1998-07-01 Hitachi Ltd Apparatus and method for processing plasma
US5656093A (en) 1996-03-08 1997-08-12 Applied Materials, Inc. Wafer spacing mask for a substrate support chuck and method of fabricating same
JPH09260356A (ja) 1996-03-22 1997-10-03 Toshiba Corp ドライエッチング方法
US6065425A (en) 1996-03-25 2000-05-23 Canon Kabushiki Kaisha Plasma process apparatus and plasma process method
DE69739101D1 (de) 1996-03-25 2008-12-24 S George Lesinski Microantriebsbefestigung für implantierbares hörhilfegerät
US5858876A (en) 1996-04-01 1999-01-12 Chartered Semiconductor Manufacturing, Ltd. Simultaneous deposit and etch method for forming a void-free and gap-filling insulator layer upon a patterned substrate layer
US5712185A (en) 1996-04-23 1998-01-27 United Microelectronics Method for forming shallow trench isolation
US5843847A (en) 1996-04-29 1998-12-01 Applied Materials, Inc. Method for etching dielectric layers with high selectivity and low microloading
US6176667B1 (en) 1996-04-30 2001-01-23 Applied Materials, Inc. Multideck wafer processing system
KR100230981B1 (ko) 1996-05-08 1999-11-15 김광호 반도체장치 제조공정의 플라즈마 식각 방법
US5660957A (en) 1996-05-16 1997-08-26 Fujitsu Limited Electron-beam treatment procedure for patterned mask layers
US5863376A (en) 1996-06-05 1999-01-26 Lam Research Corporation Temperature controlling method and apparatus for a plasma processing chamber
US6048798A (en) 1996-06-05 2000-04-11 Lam Research Corporation Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer
US5820723A (en) 1996-06-05 1998-10-13 Lam Research Corporation Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
TW409152B (en) 1996-06-13 2000-10-21 Samsung Electronic Etching gas composition for ferroelectric capacitor electrode film and method for etching a transition metal thin film
US5846373A (en) 1996-06-28 1998-12-08 Lam Research Corporation Method for monitoring process endpoints in a plasma chamber and a process monitoring arrangement in a plasma chamber
US5885358A (en) * 1996-07-09 1999-03-23 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
US5846883A (en) 1996-07-10 1998-12-08 Cvc, Inc. Method for multi-zone high-density inductively-coupled plasma generation
US5846332A (en) 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
US5993916A (en) 1996-07-12 1999-11-30 Applied Materials, Inc. Method for substrate processing with improved throughput and yield
US6170428B1 (en) 1996-07-15 2001-01-09 Applied Materials, Inc. Symmetric tunable inductively coupled HDP-CVD reactor
US5781693A (en) 1996-07-24 1998-07-14 Applied Materials, Inc. Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween
US5868897A (en) 1996-07-31 1999-02-09 Toyo Technologies, Inc. Device and method for processing a plasma to alter the surface of a substrate using neutrals
JPH1079372A (ja) 1996-09-03 1998-03-24 Matsushita Electric Ind Co Ltd プラズマ処理方法及びプラズマ処理装置
US5661093A (en) 1996-09-12 1997-08-26 Applied Materials, Inc. Method for the stabilization of halogen-doped films through the use of multiple sealing layers
US5888906A (en) 1996-09-16 1999-03-30 Micron Technology, Inc. Plasmaless dry contact cleaning method using interhalogen compounds
US5747373A (en) 1996-09-24 1998-05-05 Taiwan Semiconductor Manufacturing Company Ltd. Nitride-oxide sidewall spacer for salicide formation
US5846375A (en) 1996-09-26 1998-12-08 Micron Technology, Inc. Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment
US5835334A (en) 1996-09-30 1998-11-10 Lam Research Variable high temperature chuck for high density plasma chemical vapor deposition
US5904827A (en) 1996-10-15 1999-05-18 Reynolds Tech Fabricators, Inc. Plating cell with rotary wiper and megasonic transducer
US6308654B1 (en) 1996-10-18 2001-10-30 Applied Materials, Inc. Inductively coupled parallel-plate plasma reactor with a conical dome
US5951776A (en) 1996-10-25 1999-09-14 Applied Materials, Inc. Self aligning lift mechanism
KR100237825B1 (ko) 1996-11-05 2000-01-15 윤종용 반도체장치 제조설비의 페디스탈
US5804259A (en) 1996-11-07 1998-09-08 Applied Materials, Inc. Method and apparatus for depositing a multilayered low dielectric constant film
US5994209A (en) 1996-11-13 1999-11-30 Applied Materials, Inc. Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films
US5812403A (en) 1996-11-13 1998-09-22 Applied Materials, Inc. Methods and apparatus for cleaning surfaces in a substrate processing system
US5935334A (en) 1996-11-13 1999-08-10 Applied Materials, Inc. Substrate processing apparatus with bottom-mounted remote plasma system
US5968587A (en) 1996-11-13 1999-10-19 Applied Materials, Inc. Systems and methods for controlling the temperature of a vapor deposition apparatus
US6114216A (en) 1996-11-13 2000-09-05 Applied Materials, Inc. Methods for shallow trench isolation
US6019848A (en) 1996-11-13 2000-02-01 Applied Materials, Inc. Lid assembly for high temperature processing chamber
US5939831A (en) 1996-11-13 1999-08-17 Applied Materials, Inc. Methods and apparatus for pre-stabilized plasma generation for microwave clean applications
US5935340A (en) 1996-11-13 1999-08-10 Applied Materials, Inc. Method and apparatus for gettering fluorine from chamber material surfaces
US5963840A (en) 1996-11-13 1999-10-05 Applied Materials, Inc. Methods for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions
US5873781A (en) 1996-11-14 1999-02-23 Bally Gaming International, Inc. Gaming machine having truly random results
US5882786A (en) 1996-11-15 1999-03-16 C3, Inc. Gemstones formed of silicon carbide with diamond coating
US5830805A (en) 1996-11-18 1998-11-03 Cornell Research Foundation Electroless deposition equipment or apparatus and method of performing electroless deposition
US5855681A (en) 1996-11-18 1999-01-05 Applied Materials, Inc. Ultra high throughput wafer vacuum processing system
US6152070A (en) 1996-11-18 2000-11-28 Applied Materials, Inc. Tandem process chamber
US5844195A (en) 1996-11-18 1998-12-01 Applied Materials, Inc. Remote plasma source
US5695810A (en) 1996-11-20 1997-12-09 Cornell Research Foundation, Inc. Use of cobalt tungsten phosphide as a barrier material for copper metallization
FR2756663B1 (fr) 1996-12-04 1999-02-26 Berenguer Marc Procede de traitement d'un substrat semi-conducteur comprenant une etape de traitement de surface
US5951896A (en) 1996-12-04 1999-09-14 Micro C Technologies, Inc. Rapid thermal processing heater technology and method of use
US6312554B1 (en) 1996-12-05 2001-11-06 Applied Materials, Inc. Apparatus and method for controlling the ratio of reactive to non-reactive ions in a semiconductor wafer processing chamber
JPH10172792A (ja) 1996-12-05 1998-06-26 Tokyo Electron Ltd プラズマ処理装置
US5843538A (en) 1996-12-09 1998-12-01 John L. Raymond Method for electroless nickel plating of metal substrates
DE19651646C2 (de) 1996-12-12 2002-07-11 Deutsch Zentr Luft & Raumfahrt Verfahren zum Einblasen einer ersten und zweiten Brennstoffkomponente und Einblaskopf
US6120640A (en) 1996-12-19 2000-09-19 Applied Materials, Inc. Boron carbide parts and coatings in a plasma reactor
US5948702A (en) 1996-12-19 1999-09-07 Texas Instruments Incorporated Selective removal of TixNy
US5953635A (en) 1996-12-19 1999-09-14 Intel Corporation Interlayer dielectric with a composite dielectric stack
KR100234539B1 (ko) 1996-12-24 1999-12-15 윤종용 반도체장치 제조용 식각 장치
US5788825A (en) 1996-12-30 1998-08-04 Samsung Electronics Co., Ltd. Vacuum pumping system for a sputtering device
US5955037A (en) 1996-12-31 1999-09-21 Atmi Ecosys Corporation Effluent gas stream treatment system having utility for oxidation treatment of semiconductor manufacturing effluent gases
DE19700231C2 (de) 1997-01-07 2001-10-04 Geesthacht Gkss Forschung Vorrichtung zum Filtern und Trennen von Strömungsmedien
TW415970B (en) 1997-01-08 2000-12-21 Ebara Corp Vapor-phase film growth apparatus and gas ejection head
US5882424A (en) 1997-01-21 1999-03-16 Applied Materials, Inc. Plasma cleaning of a CVD or etch reactor using a low or mixed frequency excitation field
US5913147A (en) 1997-01-21 1999-06-15 Advanced Micro Devices, Inc. Method for fabricating copper-aluminum metallization
JPH10223608A (ja) 1997-02-04 1998-08-21 Sony Corp 半導体装置の製造方法
US5800621A (en) 1997-02-10 1998-09-01 Applied Materials, Inc. Plasma source for HDP-CVD chamber
US6035101A (en) 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
US6013584A (en) 1997-02-19 2000-01-11 Applied Materials, Inc. Methods and apparatus for forming HDP-CVD PSG film used for advanced pre-metal dielectric layer applications
US6479373B2 (en) 1997-02-20 2002-11-12 Infineon Technologies Ag Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases
DE19706682C2 (de) 1997-02-20 1999-01-14 Bosch Gmbh Robert Anisotropes fluorbasiertes Plasmaätzverfahren für Silizium
US6190233B1 (en) 1997-02-20 2001-02-20 Applied Materials, Inc. Method and apparatus for improving gap-fill capability using chemical and physical etchbacks
US5990000A (en) 1997-02-20 1999-11-23 Applied Materials, Inc. Method and apparatus for improving gap-fill capability using chemical and physical etchbacks
US6328803B2 (en) 1997-02-21 2001-12-11 Micron Technology, Inc. Method and apparatus for controlling rate of pressure change in a vacuum process chamber
US6059643A (en) 1997-02-21 2000-05-09 Aplex, Inc. Apparatus and method for polishing a flat surface using a belted polishing pad
US6267074B1 (en) 1997-02-24 2001-07-31 Foi Corporation Plasma treatment systems
US5789300A (en) 1997-02-25 1998-08-04 Advanced Micro Devices, Inc. Method of making IGFETs in densely and sparsely populated areas of a substrate
KR100295518B1 (ko) 1997-02-25 2001-11-30 아끼구사 나오유끼 질화실리콘층의에칭방법및반도체장치의제조방법
US6039834A (en) 1997-03-05 2000-03-21 Applied Materials, Inc. Apparatus and methods for upgraded substrate processing system with microwave plasma source
TW418461B (en) 1997-03-07 2001-01-11 Tokyo Electron Ltd Plasma etching device
US5850105A (en) 1997-03-21 1998-12-15 Advanced Micro Devices, Inc. Substantially planar semiconductor topography using dielectrics and chemical mechanical polish
TW376547B (en) 1997-03-27 1999-12-11 Matsushita Electric Ind Co Ltd Method and apparatus for plasma processing
US5786276A (en) 1997-03-31 1998-07-28 Applied Materials, Inc. Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and CF4 and O2
US6017414A (en) 1997-03-31 2000-01-25 Lam Research Corporation Method of and apparatus for detecting and controlling in situ cleaning time of vacuum processing chambers
US6030666A (en) 1997-03-31 2000-02-29 Lam Research Corporation Method for microwave plasma substrate heating
US5968610A (en) 1997-04-02 1999-10-19 United Microelectronics Corp. Multi-step high density plasma chemical vapor deposition process
JPH10284360A (ja) 1997-04-02 1998-10-23 Hitachi Ltd 基板温度制御装置及び方法
US5866483A (en) 1997-04-04 1999-02-02 Applied Materials, Inc. Method for anisotropically etching tungsten using SF6, CHF3, and N2
US6174450B1 (en) 1997-04-16 2001-01-16 Lam Research Corporation Methods and apparatus for controlling ion energy and plasma density in a plasma processing system
US6143158A (en) 1997-04-25 2000-11-07 Fuji Photo Film Co., Ltd. Method for producing an aluminum support for a lithographic printing plate
US6204200B1 (en) 1997-05-05 2001-03-20 Texas Instruments Incorporated Process scheme to form controlled airgaps between interconnect lines to reduce capacitance
US6149828A (en) 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
US5969422A (en) 1997-05-15 1999-10-19 Advanced Micro Devices, Inc. Plated copper interconnect structure
US6083344A (en) 1997-05-29 2000-07-04 Applied Materials, Inc. Multi-zone RF inductively coupled source configuration
US6189483B1 (en) 1997-05-29 2001-02-20 Applied Materials, Inc. Process kit
US5937323A (en) 1997-06-03 1999-08-10 Applied Materials, Inc. Sequencing of the recipe steps for the optimal low-k HDP-CVD processing
US6136685A (en) 1997-06-03 2000-10-24 Applied Materials, Inc. High deposition rate recipe for low dielectric constant films
US6706334B1 (en) 1997-06-04 2004-03-16 Tokyo Electron Limited Processing method and apparatus for removing oxide film
US5872058A (en) 1997-06-17 1999-02-16 Novellus Systems, Inc. High aspect ratio gapfill process by using HDP
US5885749A (en) 1997-06-20 1999-03-23 Clear Logic, Inc. Method of customizing integrated circuits by selective secondary deposition of layer interconnect material
US5933757A (en) 1997-06-23 1999-08-03 Lsi Logic Corporation Etch process selective to cobalt silicide for formation of integrated circuit structures
US6815633B1 (en) 1997-06-26 2004-11-09 Applied Science & Technology, Inc. Inductively-coupled toroidal plasma source
US6388226B1 (en) 1997-06-26 2002-05-14 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6150628A (en) 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6518155B1 (en) 1997-06-30 2003-02-11 Intel Corporation Device structure and method for reducing silicide encroachment
US6184121B1 (en) 1997-07-10 2001-02-06 International Business Machines Corporation Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same
US5944049A (en) 1997-07-15 1999-08-31 Applied Materials, Inc. Apparatus and method for regulating a pressure in a chamber
JPH1136076A (ja) 1997-07-16 1999-02-09 Tokyo Electron Ltd Ｃｖｄ成膜装置およびｃｖｄ成膜方法
US5982100A (en) 1997-07-28 1999-11-09 Pars, Inc. Inductively coupled plasma reactor
US5814365A (en) 1997-08-15 1998-09-29 Micro C Technologies, Inc. Reactor and method of processing a semiconductor substate
US6090212A (en) 1997-08-15 2000-07-18 Micro C Technologies, Inc. Substrate platform for a semiconductor substrate during rapid high temperature processing and method of supporting a substrate
US6007635A (en) 1997-11-26 1999-12-28 Micro C Technologies, Inc. Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing
US5926737A (en) 1997-08-19 1999-07-20 Tokyo Electron Limited Use of TiCl4 etchback process during integrated CVD-Ti/TiN wafer processing
US6080446A (en) 1997-08-21 2000-06-27 Anelva Corporation Method of depositing titanium nitride thin film and CVD deposition apparatus
US6258170B1 (en) 1997-09-11 2001-07-10 Applied Materials, Inc. Vaporization and deposition apparatus
US6063688A (en) 1997-09-29 2000-05-16 Intel Corporation Fabrication of deep submicron structures and quantum wire transistors using hard-mask transistor width definition
US6161500A (en) 1997-09-30 2000-12-19 Tokyo Electron Limited Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
US6364957B1 (en) 1997-10-09 2002-04-02 Applied Materials, Inc. Support assembly with thermal expansion compensation
US6688375B1 (en) 1997-10-14 2004-02-10 Applied Materials, Inc. Vacuum processing system having improved substrate heating and cooling
GB9722028D0 (en) 1997-10-17 1997-12-17 Shipley Company Ll C Plating of polymers
US6110556A (en) * 1997-10-17 2000-08-29 Applied Materials, Inc. Lid assembly for a process chamber employing asymmetric flow geometries
US6379575B1 (en) 1997-10-21 2002-04-30 Applied Materials, Inc. Treatment of etching chambers using activated cleaning gas
US6013191A (en) 1997-10-27 2000-01-11 Advanced Refractory Technologies, Inc. Method of polishing CVD diamond films by oxygen plasma
US6136693A (en) 1997-10-27 2000-10-24 Chartered Semiconductor Manufacturing Ltd. Method for planarized interconnect vias using electroless plating and CMP
US6063712A (en) 1997-11-25 2000-05-16 Micron Technology, Inc. Oxide etch and method of etching
US6136165A (en) 1997-11-26 2000-10-24 Cvc Products, Inc. Apparatus for inductively-coupled-plasma-enhanced ionized physical-vapor deposition
US5849639A (en) 1997-11-26 1998-12-15 Lucent Technologies Inc. Method for removing etching residues and contaminants
US6079356A (en) 1997-12-02 2000-06-27 Applied Materials, Inc. Reactor optimized for chemical vapor deposition of titanium
US6077780A (en) 1997-12-03 2000-06-20 Advanced Micro Devices, Inc. Method for filling high aspect ratio openings of an integrated circuit to minimize electromigration failure
US6143476A (en) 1997-12-12 2000-11-07 Applied Materials Inc Method for high temperature etching of patterned layers using an organic mask stack
US5976327A (en) 1997-12-12 1999-11-02 Applied Materials, Inc. Step coverage and overhang improvement by pedestal bias voltage modulation
US6083844A (en) 1997-12-22 2000-07-04 Lam Research Corporation Techniques for etching an oxide layer
US6415858B1 (en) 1997-12-31 2002-07-09 Temptronic Corporation Temperature control system for a workpiece chuck
US6406759B1 (en) 1998-01-08 2002-06-18 The University Of Tennessee Research Corporation Remote exposure of workpieces using a recirculated plasma
US6140234A (en) 1998-01-20 2000-10-31 International Business Machines Corporation Method to selectively fill recesses with conductive metal
US6635578B1 (en) 1998-02-09 2003-10-21 Applied Materials, Inc Method of operating a dual chamber reactor with neutral density decoupled from ion density
US6074514A (en) 1998-02-09 2000-06-13 Applied Materials, Inc. High selectivity etch using an external plasma discharge
US5932077A (en) 1998-02-09 1999-08-03 Reynolds Tech Fabricators, Inc. Plating cell with horizontal product load mechanism
US6627532B1 (en) 1998-02-11 2003-09-30 Applied Materials, Inc. Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition
US6340435B1 (en) 1998-02-11 2002-01-22 Applied Materials, Inc. Integrated low K dielectrics and etch stops
US6186091B1 (en) 1998-02-11 2001-02-13 Silicon Genesis Corporation Shielded platen design for plasma immersion ion implantation
US6054379A (en) 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6197688B1 (en) 1998-02-12 2001-03-06 Motorola Inc. Interconnect structure in a semiconductor device and method of formation
US6171661B1 (en) 1998-02-25 2001-01-09 Applied Materials, Inc. Deposition of copper with increased adhesion
US6892669B2 (en) 1998-02-26 2005-05-17 Anelva Corporation CVD apparatus
JP4151862B2 (ja) 1998-02-26 2008-09-17 キヤノンアネルバ株式会社 Ｃｖｄ装置
US6551939B2 (en) 1998-03-17 2003-04-22 Anneal Corporation Plasma surface treatment method and resulting device
US5920792A (en) 1998-03-19 1999-07-06 Winbond Electronics Corp High density plasma enhanced chemical vapor deposition process in combination with chemical mechanical polishing process for preparation and planarization of intemetal dielectric layers
US6197181B1 (en) 1998-03-20 2001-03-06 Semitool, Inc. Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece
US6194038B1 (en) 1998-03-20 2001-02-27 Applied Materials, Inc. Method for deposition of a conformal layer on a substrate
US6565729B2 (en) 1998-03-20 2003-05-20 Semitool, Inc. Method for electrochemically depositing metal on a semiconductor workpiece
US6602434B1 (en) 1998-03-27 2003-08-05 Applied Materials, Inc. Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window
US6203657B1 (en) 1998-03-31 2001-03-20 Lam Research Corporation Inductively coupled plasma downstream strip module
US6395150B1 (en) 1998-04-01 2002-05-28 Novellus Systems, Inc. Very high aspect ratio gapfill using HDP
JP2002510878A (ja) 1998-04-02 2002-04-09 アプライド マテリアルズ インコーポレイテッド 低ｋ誘電体をエッチングする方法
JP2976965B2 (ja) 1998-04-02 1999-11-10 日新電機株式会社 成膜方法及び成膜装置
US6198616B1 (en) 1998-04-03 2001-03-06 Applied Materials, Inc. Method and apparatus for supplying a chucking voltage to an electrostatic chuck within a semiconductor wafer processing system
US6174810B1 (en) 1998-04-06 2001-01-16 Motorola, Inc. Copper interconnect structure and method of formation
US6117245A (en) 1998-04-08 2000-09-12 Applied Materials, Inc. Method and apparatus for controlling cooling and heating fluids for a gas distribution plate
US5997649A (en) 1998-04-09 1999-12-07 Tokyo Electron Limited Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
US6184489B1 (en) 1998-04-13 2001-02-06 Nec Corporation Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles
US6113771A (en) 1998-04-21 2000-09-05 Applied Materials, Inc. Electro deposition chemistry
US6416647B1 (en) 1998-04-21 2002-07-09 Applied Materials, Inc. Electro-chemical deposition cell for face-up processing of single semiconductor substrates
US6077386A (en) 1998-04-23 2000-06-20 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6179924B1 (en) 1998-04-28 2001-01-30 Applied Materials, Inc. Heater for use in substrate processing apparatus to deposit tungsten
US6093594A (en) 1998-04-29 2000-07-25 Advanced Micro Devices, Inc. CMOS optimization method utilizing sacrificial sidewall spacer
US6081414A (en) 1998-05-01 2000-06-27 Applied Materials, Inc. Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system
US6030881A (en) 1998-05-05 2000-02-29 Novellus Systems, Inc. High throughput chemical vapor deposition process capable of filling high aspect ratio structures
US6218288B1 (en) 1998-05-11 2001-04-17 Micron Technology, Inc. Multiple step methods for forming conformal layers
US6509283B1 (en) 1998-05-13 2003-01-21 National Semiconductor Corporation Thermal oxidation method utilizing atomic oxygen to reduce dangling bonds in silicon dioxide grown on silicon
KR100505310B1 (ko) 1998-05-13 2005-08-04 동경 엘렉트론 주식회사 성막 장치 및 방법
US6007785A (en) 1998-05-20 1999-12-28 Academia Sinica Apparatus for efficient ozone generation
US6086677A (en) 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
KR100296137B1 (ko) 1998-06-16 2001-08-07 박종섭 보호막으로서고밀도플라즈마화학기상증착에의한절연막을갖는반도체소자제조방법
US6148761A (en) 1998-06-16 2000-11-21 Applied Materials, Inc. Dual channel gas distribution plate
US6302964B1 (en) 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6147009A (en) 1998-06-29 2000-11-14 International Business Machines Corporation Hydrogenated oxidized silicon carbon material
JP2003517190A (ja) 1998-06-30 2003-05-20 セミトウール・インコーポレーテツド ミクロ電子工学の適用のための金属被覆構造物及びその構造物の形成法
US6562128B1 (en) 2001-11-28 2003-05-13 Seh America, Inc. In-situ post epitaxial treatment process
US6037018A (en) 1998-07-01 2000-03-14 Taiwan Semiconductor Maufacturing Company Shallow trench isolation filled by high density plasma chemical vapor deposition
US6248429B1 (en) 1998-07-06 2001-06-19 Micron Technology, Inc. Metallized recess in a substrate
JP2000026975A (ja) 1998-07-09 2000-01-25 Komatsu Ltd 表面処理装置
KR100265866B1 (ko) 1998-07-11 2000-12-01 황철주 반도체 제조장치
US6182603B1 (en) 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
US6063683A (en) 1998-07-27 2000-05-16 Acer Semiconductor Manufacturing, Inc. Method of fabricating a self-aligned crown-shaped capacitor for high density DRAM cells
US6436816B1 (en) 1998-07-31 2002-08-20 Industrial Technology Research Institute Method of electroless plating copper on nitride barrier
US6162370A (en) 1998-08-28 2000-12-19 Ashland Inc. Composition and method for selectively etching a silicon nitride film
US6383951B1 (en) 1998-09-03 2002-05-07 Micron Technology, Inc. Low dielectric constant material for integrated circuit fabrication
US6440863B1 (en) 1998-09-04 2002-08-27 Taiwan Semiconductor Manufacturing Company Plasma etch method for forming patterned oxygen containing plasma etchable layer
US6165912A (en) 1998-09-17 2000-12-26 Cfmt, Inc. Electroless metal deposition of electronic components in an enclosable vessel
US6037266A (en) 1998-09-28 2000-03-14 Taiwan Semiconductor Manufacturing Company Method for patterning a polysilicon gate with a thin gate oxide in a polysilicon etcher
JP3725708B2 (ja) 1998-09-29 2005-12-14 株式会社東芝 半導体装置
US6170429B1 (en) 1998-09-30 2001-01-09 Lam Research Corporation Chamber liner for semiconductor process chambers
US6277733B1 (en) 1998-10-05 2001-08-21 Texas Instruments Incorporated Oxygen-free, dry plasma process for polymer removal
JP3764594B2 (ja) 1998-10-12 2006-04-12 株式会社日立製作所 プラズマ処理方法
US6180523B1 (en) 1998-10-13 2001-01-30 Industrial Technology Research Institute Copper metallization of USLI by electroless process
US6228758B1 (en) 1998-10-14 2001-05-08 Advanced Micro Devices, Inc. Method of making dual damascene conductive interconnections and integrated circuit device comprising same
US6251802B1 (en) 1998-10-19 2001-06-26 Micron Technology, Inc. Methods of forming carbon-containing layers
US6107199A (en) 1998-10-24 2000-08-22 International Business Machines Corporation Method for improving the morphology of refractory metal thin films
US6454860B2 (en) * 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
US20030101938A1 (en) 1998-10-27 2003-06-05 Applied Materials, Inc. Apparatus for the deposition of high dielectric constant films
JP3064268B2 (ja) 1998-10-29 2000-07-12 アプライド マテリアルズ インコーポレイテッド 成膜方法及び装置
US6176198B1 (en) 1998-11-02 2001-01-23 Applied Materials, Inc. Apparatus and method for depositing low K dielectric materials
US6462371B1 (en) 1998-11-24 2002-10-08 Micron Technology Inc. Films doped with carbon for use in integrated circuit technology
US6203863B1 (en) 1998-11-27 2001-03-20 United Microelectronics Corp. Method of gap filling
US6228233B1 (en) 1998-11-30 2001-05-08 Applied Materials, Inc. Inflatable compliant bladder assembly
US6251236B1 (en) 1998-11-30 2001-06-26 Applied Materials, Inc. Cathode contact ring for electrochemical deposition
US6258220B1 (en) 1998-11-30 2001-07-10 Applied Materials, Inc. Electro-chemical deposition system
US6015747A (en) 1998-12-07 2000-01-18 Advanced Micro Device Method of metal/polysilicon gate formation in a field effect transistor
US6242349B1 (en) 1998-12-09 2001-06-05 Advanced Micro Devices, Inc. Method of forming copper/copper alloy interconnection with reduced electromigration
US6364954B2 (en) 1998-12-14 2002-04-02 Applied Materials, Inc. High temperature chemical vapor deposition chamber
DE59914708D1 (de) 1998-12-24 2008-05-08 Atmel Germany Gmbh Verfahren zum anisotropen plasmachemischen Trockenätzen von Siliziumnitrid-Schichten mittels eines Fluor-enthaltenden Gasgemisches
DE19901210A1 (de) 1999-01-14 2000-07-27 Siemens Ag Halbleiterbauelement und Verfahren zu dessen Herstellung
KR100331544B1 (ko) 1999-01-18 2002-04-06 윤종용 반응챔버에 가스를 유입하는 방법 및 이에 사용되는 샤워헤드
US6499425B1 (en) 1999-01-22 2002-12-31 Micron Technology, Inc. Quasi-remote plasma processing method and apparatus
TW428256B (en) 1999-01-25 2001-04-01 United Microelectronics Corp Structure of conducting-wire layer and its fabricating method
JP3330554B2 (ja) 1999-01-27 2002-09-30 松下電器産業株式会社 エッチング方法
US6245669B1 (en) 1999-02-05 2001-06-12 Taiwan Semiconductor Manufacturing Company High selectivity Si-rich SiON etch-stop layer
US6740247B1 (en) 1999-02-05 2004-05-25 Massachusetts Institute Of Technology HF vapor phase wafer cleaning and oxide etching
KR100322545B1 (ko) 1999-02-10 2002-03-18 윤종용 건식 세정 공정을 전 공정으로 이용하는 반도체 장치의콘택홀 채움 방법
US6010962A (en) 1999-02-12 2000-01-04 Taiwan Semiconductor Manufacturing Company Copper chemical-mechanical-polishing (CMP) dishing
US6245670B1 (en) 1999-02-19 2001-06-12 Advanced Micro Devices, Inc. Method for filling a dual damascene opening having high aspect ratio to minimize electromigration failure
TW469534B (en) 1999-02-23 2001-12-21 Matsushita Electric Ind Co Ltd Plasma processing method and apparatus
US6291282B1 (en) 1999-02-26 2001-09-18 Texas Instruments Incorporated Method of forming dual metal gate structures or CMOS devices
TW582050B (en) 1999-03-03 2004-04-01 Ebara Corp Apparatus and method for processing substrate
US6136163A (en) 1999-03-05 2000-10-24 Applied Materials, Inc. Apparatus for electro-chemical deposition with thermal anneal chamber
US6312995B1 (en) 1999-03-08 2001-11-06 Advanced Micro Devices, Inc. MOS transistor with assisted-gates and ultra-shallow “Psuedo” source and drain extensions for ultra-large-scale integration
US6468604B1 (en) 1999-03-17 2002-10-22 Anelva Corporation Method for manufacturing a titanium nitride thin film
US6197705B1 (en) 1999-03-18 2001-03-06 Chartered Semiconductor Manufacturing Ltd. Method of silicon oxide and silicon glass films deposition
US6797189B2 (en) 1999-03-25 2004-09-28 Hoiman (Raymond) Hung Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon
US6144099A (en) 1999-03-30 2000-11-07 Advanced Micro Devices, Inc. Semiconductor metalization barrier
US6238582B1 (en) 1999-03-30 2001-05-29 Veeco Instruments, Inc. Reactive ion beam etching method and a thin film head fabricated using the method
JP2000290777A (ja) 1999-04-07 2000-10-17 Tokyo Electron Ltd ガス処理装置、バッフル部材、及びガス処理方法
US6263830B1 (en) 1999-04-12 2001-07-24 Matrix Integrated Systems, Inc. Microwave choke for remote plasma generator
US6099697A (en) 1999-04-13 2000-08-08 Applied Materials, Inc. Method of and apparatus for restoring a support surface in a semiconductor wafer processing system
US6450116B1 (en) 1999-04-22 2002-09-17 Applied Materials, Inc. Apparatus for exposing a substrate to plasma radicals
US6110836A (en) 1999-04-22 2000-08-29 Applied Materials, Inc. Reactive plasma etch cleaning of high aspect ratio openings
US6110832A (en) 1999-04-28 2000-08-29 International Business Machines Corporation Method and apparatus for slurry polishing
JP3965258B2 (ja) 1999-04-30 2007-08-29 日本碍子株式会社 半導体製造装置用のセラミックス製ガス供給構造
US6541671B1 (en) 2002-02-13 2003-04-01 The Regents Of The University Of California Synthesis of 2H- and 13C-substituted dithanes
JP3099066B1 (ja) 1999-05-07 2000-10-16 東京工業大学長 薄膜構造体の製造方法
US6310755B1 (en) 1999-05-07 2001-10-30 Applied Materials, Inc. Electrostatic chuck having gas cavity and method
US6490146B2 (en) 1999-05-07 2002-12-03 Applied Materials Inc. Electrostatic chuck bonded to base with a bond layer and method
JP3482904B2 (ja) 1999-05-10 2004-01-06 松下電器産業株式会社 プラズマ処理方法及び装置
EP1198610A4 (en) 1999-05-14 2004-04-07 Univ California PLASMA POWER GENERATING DEVICE WITH A LARGE PRESSURE RANGE AT LOW TEMPERATURES
US7091605B2 (en) 2001-09-21 2006-08-15 Eastman Kodak Company Highly moisture-sensitive electronic device element and method for fabrication
US6129829A (en) 1999-05-14 2000-10-10 Thompson; Donald E. Electrostatic filter for dielectric fluid
JP2000331993A (ja) 1999-05-19 2000-11-30 Mitsubishi Electric Corp プラズマ処理装置
EP1879213B1 (en) 1999-05-26 2012-03-14 Tokyo Electron Limited Plasma processing apparatus
US6323128B1 (en) 1999-05-26 2001-11-27 International Business Machines Corporation Method for forming Co-W-P-Au films
JP3320685B2 (ja) 1999-06-02 2002-09-03 株式会社半導体先端テクノロジーズ 微細パターン形成方法
US6916399B1 (en) 1999-06-03 2005-07-12 Applied Materials Inc Temperature controlled window with a fluid supply system
US6565661B1 (en) 1999-06-04 2003-05-20 Simplus Systems Corporation High flow conductance and high thermal conductance showerhead system and method
US6174812B1 (en) 1999-06-08 2001-01-16 United Microelectronics Corp. Copper damascene technology for ultra large scale integration circuits
US20020033233A1 (en) 1999-06-08 2002-03-21 Stephen E. Savas Icp reactor having a conically-shaped plasma-generating section
US6367413B1 (en) 1999-06-15 2002-04-09 Tokyo Electron Limited Apparatus for monitoring substrate biasing during plasma processing of a substrate
US6821571B2 (en) 1999-06-18 2004-11-23 Applied Materials Inc. Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
US6161576A (en) 1999-06-23 2000-12-19 Mks Instruments, Inc. Integrated turbo pump and control valve system
US6110530A (en) 1999-06-25 2000-08-29 Applied Materials, Inc. CVD method of depositing copper films by using improved organocopper precursor blend
FR2795555B1 (fr) 1999-06-28 2002-12-13 France Telecom Procede de fabrication d'un dispositif semi-conducteur comprenant un empilement forme alternativement de couches de silicium et de couches de materiau dielectrique
US6277752B1 (en) 1999-06-28 2001-08-21 Taiwan Semiconductor Manufacturing Company Multiple etch method for forming residue free patterned hard mask layer
US6242360B1 (en) 1999-06-29 2001-06-05 Lam Research Corporation Plasma processing system apparatus, and method for delivering RF power to a plasma processing
US6444083B1 (en) 1999-06-30 2002-09-03 Lam Research Corporation Corrosion resistant component of semiconductor processing equipment and method of manufacturing thereof
US6415736B1 (en) 1999-06-30 2002-07-09 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6245192B1 (en) 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6258223B1 (en) 1999-07-09 2001-07-10 Applied Materials, Inc. In-situ electroless copper seed layer enhancement in an electroplating system
US6516815B1 (en) 1999-07-09 2003-02-11 Applied Materials, Inc. Edge bead removal/spin rinse dry (EBR/SRD) module
US6352081B1 (en) 1999-07-09 2002-03-05 Applied Materials, Inc. Method of cleaning a semiconductor device processing chamber after a copper etch process
US6351013B1 (en) 1999-07-13 2002-02-26 Advanced Micro Devices, Inc. Low-K sub spacer pocket formation for gate capacitance reduction
US6342733B1 (en) 1999-07-27 2002-01-29 International Business Machines Corporation Reduced electromigration and stressed induced migration of Cu wires by surface coating
US6281135B1 (en) 1999-08-05 2001-08-28 Axcelis Technologies, Inc. Oxygen free plasma stripping process
US6237527B1 (en) 1999-08-06 2001-05-29 Axcelis Technologies, Inc. System for improving energy purity and implant consistency, and for minimizing charge accumulation of an implanted substrate
US6235643B1 (en) 1999-08-10 2001-05-22 Applied Materials, Inc. Method for etching a trench having rounded top and bottom corners in a silicon substrate
EP1077480B1 (en) 1999-08-17 2008-11-12 Applied Materials, Inc. Method and apparatus to enhance properties of Si-O-C low K films
EP1214459B1 (en) 1999-08-17 2009-01-07 Tokyo Electron Limited Pulsed plasma processing method and apparatus
EP1077274A1 (en) 1999-08-17 2001-02-21 Applied Materials, Inc. Lid cooling mechanism and method for optimized deposition of low-k dielectric using tri methylsilane-ozone based processes
EP1077479A1 (en) 1999-08-17 2001-02-21 Applied Materials, Inc. Post-deposition treatment to enchance properties of Si-O-C low K film
US6602806B1 (en) 1999-08-17 2003-08-05 Applied Materials, Inc. Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film
JP4220075B2 (ja) 1999-08-20 2009-02-04 東京エレクトロン株式会社 成膜方法および成膜装置
US6322716B1 (en) 1999-08-30 2001-11-27 Cypress Semiconductor Corp. Method for conditioning a plasma etch chamber
US6375748B1 (en) 1999-09-01 2002-04-23 Applied Materials, Inc. Method and apparatus for preventing edge deposition
EP1083593A1 (en) 1999-09-10 2001-03-14 Interuniversitair Micro-Elektronica Centrum Vzw Etching of silicon nitride by anhydrous halogen gas
US6441492B1 (en) 1999-09-10 2002-08-27 James A. Cunningham Diffusion barriers for copper interconnect systems
US6548414B2 (en) 1999-09-14 2003-04-15 Infineon Technologies Ag Method of plasma etching thin films of difficult to dry etch materials
JP3514186B2 (ja) 1999-09-16 2004-03-31 日新電機株式会社 薄膜形成方法及び装置
US6503843B1 (en) 1999-09-21 2003-01-07 Applied Materials, Inc. Multistep chamber cleaning and film deposition process using a remote plasma that also enhances film gap fill
US6432819B1 (en) 1999-09-27 2002-08-13 Applied Materials, Inc. Method and apparatus of forming a sputtered doped seed layer
US6153935A (en) 1999-09-30 2000-11-28 International Business Machines Corporation Dual etch stop/diffusion barrier for damascene interconnects
US6287643B1 (en) 1999-09-30 2001-09-11 Novellus Systems, Inc. Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor
US6321587B1 (en) 1999-10-15 2001-11-27 Radian International Llc Solid state fluorine sensor system and method
US6423284B1 (en) 1999-10-18 2002-07-23 Advanced Technology Materials, Inc. Fluorine abatement using steam injection in oxidation treatment of semiconductor manufacturing effluent gases
US6364949B1 (en) 1999-10-19 2002-04-02 Applied Materials, Inc. 300 mm CVD chamber design for metal-organic thin film deposition
KR100338768B1 (ko) 1999-10-25 2002-05-30 윤종용 산화막 제거방법 및 산화막 제거를 위한 반도체 제조 장치
DE29919142U1 (de) 1999-10-30 2001-03-08 Agrodyn Hochspannungstechnik GmbH, 33803 Steinhagen Plasmadüse
US6551924B1 (en) 1999-11-02 2003-04-22 International Business Machines Corporation Post metalization chem-mech polishing dielectric etch
JP3366301B2 (ja) 1999-11-10 2003-01-14 日本電気株式会社 プラズマｃｖｄ装置
US6162302A (en) 1999-11-16 2000-12-19 Agilent Technologies Method of cleaning quartz substrates using conductive solutions
US8114245B2 (en) 1999-11-26 2012-02-14 Tadahiro Ohmi Plasma etching device
US6465350B1 (en) 1999-11-29 2002-10-15 Texas Instruments Incorporated Aluminum nitride thin film formation on integrated circuits
US6573194B2 (en) 1999-11-29 2003-06-03 Texas Instruments Incorporated Method of growing surface aluminum nitride on aluminum films with low energy barrier
US6599842B2 (en) 1999-11-29 2003-07-29 Applied Materials, Inc. Method for rounding corners and removing damaged outer surfaces of a trench
AU2905901A (en) 1999-11-30 2001-06-12 Regents Of The University Of California, The Method for producing fluorinated diamond-like carbon films
US6342453B1 (en) 1999-12-03 2002-01-29 Applied Materials, Inc. Method for CVD process control for enhancing device performance
DE10060002B4 (de) 1999-12-07 2016-01-28 Komatsu Ltd. Vorrichtung zur Oberflächenbehandlung
JP2001164371A (ja) 1999-12-07 2001-06-19 Nec Corp プラズマｃｖｄ装置およびプラズマｃｖｄ成膜法
TW514996B (en) 1999-12-10 2002-12-21 Tokyo Electron Ltd Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
JP3659101B2 (ja) 1999-12-13 2005-06-15 富士ゼロックス株式会社 窒化物半導体素子及びその製造方法
JP4695238B2 (ja) 1999-12-14 2011-06-08 東京エレクトロン株式会社 圧力制御方法
US6277763B1 (en) 1999-12-16 2001-08-21 Applied Materials, Inc. Plasma processing of tungsten using a gas mixture comprising a fluorinated gas and oxygen
KR100385133B1 (ko) 1999-12-16 2003-05-22 엘지전자 주식회사 교환기의 셀 다중화/역다중화 시스템
US6225745B1 (en) 1999-12-17 2001-05-01 Axcelis Technologies, Inc. Dual plasma source for plasma process chamber
WO2001046492A1 (en) 1999-12-22 2001-06-28 Tokyo Electron Limited Method and system for reducing damage to substrates during plasma processing with a resonator source
US6534809B2 (en) 1999-12-22 2003-03-18 Agilent Technologies, Inc. Hardmask designs for dry etching FeRAM capacitor stacks
US6350697B1 (en) 1999-12-22 2002-02-26 Lam Research Corporation Method of cleaning and conditioning plasma reaction chamber
US6238513B1 (en) 1999-12-28 2001-05-29 International Business Machines Corporation Wafer lift assembly
US6463782B1 (en) 2000-01-13 2002-10-15 Taiwan Semiconductor Manufacturing Co., Ltd. Self-centering calibration tool and method of calibrating
US6306246B1 (en) 2000-01-14 2001-10-23 Advanced Micro Devices, Inc. Dual window optical port for improved end point detection
KR100767762B1 (ko) 2000-01-18 2007-10-17 에이에스엠 저펜 가부시기가이샤 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치
US6772827B2 (en) 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
US6477980B1 (en) 2000-01-20 2002-11-12 Applied Materials, Inc. Flexibly suspended gas distribution manifold for plasma chamber
US6656831B1 (en) 2000-01-26 2003-12-02 Applied Materials, Inc. Plasma-enhanced chemical vapor deposition of a metal nitride layer
US6494959B1 (en) 2000-01-28 2002-12-17 Applied Materials, Inc. Process and apparatus for cleaning a silicon surface
JP3723712B2 (ja) 2000-02-10 2005-12-07 株式会社日立国際電気 基板処理装置及び基板処理方法
US6743473B1 (en) 2000-02-16 2004-06-01 Applied Materials, Inc. Chemical vapor deposition of barriers from novel precursors
US6447636B1 (en) 2000-02-16 2002-09-10 Applied Materials, Inc. Plasma reactor with dynamic RF inductive and capacitive coupling control
KR100378871B1 (ko) 2000-02-16 2003-04-07 주식회사 아펙스 라디칼 증착을 위한 샤워헤드장치
US6573030B1 (en) 2000-02-17 2003-06-03 Applied Materials, Inc. Method for depositing an amorphous carbon layer
TW580735B (en) 2000-02-21 2004-03-21 Hitachi Ltd Plasma treatment apparatus and treating method of sample material
US6350320B1 (en) 2000-02-22 2002-02-26 Applied Materials, Inc. Heater for processing chamber
US6319766B1 (en) 2000-02-22 2001-11-20 Applied Materials, Inc. Method of tantalum nitride deposition by tantalum oxide densification
EP1127957A1 (en) 2000-02-24 2001-08-29 Asm Japan K.K. A film forming apparatus having cleaning function
US6391788B1 (en) 2000-02-25 2002-05-21 Applied Materials, Inc. Two etchant etch method
US6958098B2 (en) 2000-02-28 2005-10-25 Applied Materials, Inc. Semiconductor wafer support lift-pin assembly
JP2001319885A (ja) 2000-03-02 2001-11-16 Hitachi Kokusai Electric Inc 基板処理装置及び半導体製造方法
JP3979791B2 (ja) 2000-03-08 2007-09-19 株式会社ルネサステクノロジ 半導体装置およびその製造方法
US6537707B1 (en) 2000-03-15 2003-03-25 Agilent Technologies, Inc. Two-stage roughing and controlled deposition rates for fabricating laser ablation masks
US7196283B2 (en) 2000-03-17 2007-03-27 Applied Materials, Inc. Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface
US6528751B1 (en) 2000-03-17 2003-03-04 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma
US6900596B2 (en) 2002-07-09 2005-05-31 Applied Materials, Inc. Capacitively coupled plasma reactor with uniform radial distribution of plasma
US6527968B1 (en) 2000-03-27 2003-03-04 Applied Materials Inc. Two-stage self-cleaning silicon etch process
JP3433721B2 (ja) 2000-03-28 2003-08-04 ティーディーケイ株式会社 ドライエッチング方法及び微細加工方法
AU2001247685A1 (en) 2000-03-30 2001-10-15 Tokyo Electron Limited Method of and apparatus for tunable gas injection in a plasma processing system
JP4056195B2 (ja) 2000-03-30 2008-03-05 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2001284340A (ja) 2000-03-30 2001-10-12 Hitachi Kokusai Electric Inc 半導体製造装置および半導体装置の製造方法
DE10016340C1 (de) 2000-03-31 2001-12-06 Promos Technologies Inc Verfahren zur Herstellung von flaschenförmigen Tiefgräben zur Verwendung in Halbleitervorrichtungen
US6558564B1 (en) 2000-04-05 2003-05-06 Applied Materials Inc. Plasma energy control by inducing plasma instability
JP2001355074A (ja) 2000-04-10 2001-12-25 Sony Corp 無電解メッキ処理方法およびその装置
US7892974B2 (en) 2000-04-11 2011-02-22 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits
KR20010096229A (ko) 2000-04-18 2001-11-07 황 철 주 반도체 소자의 극박막 형성장치 및 그 형성방법
US6762129B2 (en) 2000-04-19 2004-07-13 Matsushita Electric Industrial Co., Ltd. Dry etching method, fabrication method for semiconductor device, and dry etching apparatus
JP2001308023A (ja) 2000-04-21 2001-11-02 Tokyo Electron Ltd 熱処理装置及び方法
US6329297B1 (en) 2000-04-21 2001-12-11 Applied Materials, Inc. Dilute remote plasma clean
US6502530B1 (en) 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
JP2001313282A (ja) 2000-04-28 2001-11-09 Nec Corp ドライエッチング方法
US6387207B1 (en) 2000-04-28 2002-05-14 Applied Materials, Inc. Integration of remote plasma generator with semiconductor processing chamber
US6458718B1 (en) 2000-04-28 2002-10-01 Asm Japan K.K. Fluorine-containing materials and processes
KR100367662B1 (ko) 2000-05-02 2003-01-10 주식회사 셈테크놀러지 하이퍼서멀 중성입자 발생 장치 및 이를 채용하는 중성입자 처리 장치
JP3662472B2 (ja) 2000-05-09 2005-06-22 エム・エフエスアイ株式会社 基板表面の処理方法
EP1435655A3 (en) 2000-05-10 2004-07-14 Ibiden Co., Ltd. Electrostatic chuck
US6679981B1 (en) 2000-05-11 2004-01-20 Applied Materials, Inc. Inductive plasma loop enhancing magnetron sputtering
KR100638917B1 (ko) 2000-05-17 2006-10-25 동경 엘렉트론 주식회사 처리 장치 부품의 조립 기구 및 그 조립 방법
JP3448737B2 (ja) 2000-05-25 2003-09-22 住友重機械工業株式会社 ウエハーチャック用冷却板及びウエハーチャック
US6418874B1 (en) 2000-05-25 2002-07-16 Applied Materials, Inc. Toroidal plasma source for plasma processing
US6645585B2 (en) 2000-05-30 2003-11-11 Kyocera Corporation Container for treating with corrosive-gas and plasma and method for manufacturing the same
TW454429B (en) 2000-05-31 2001-09-11 Nanya Technology Corp Plasma generator
JP2002194547A (ja) 2000-06-08 2002-07-10 Applied Materials Inc アモルファスカーボン層の堆積方法
KR20010111058A (ko) 2000-06-09 2001-12-15 조셉 제이. 스위니 전체 영역 온도 제어 정전기 척 및 그 제조방법
US6603269B1 (en) 2000-06-13 2003-08-05 Applied Materials, Inc. Resonant chamber applicator for remote plasma source
US6509623B2 (en) 2000-06-15 2003-01-21 Newport Fab, Llc Microelectronic air-gap structures and methods of forming the same
US6391753B1 (en) 2000-06-20 2002-05-21 Advanced Micro Devices, Inc. Process for forming gate conductors
US6531069B1 (en) 2000-06-22 2003-03-11 International Business Machines Corporation Reactive Ion Etching chamber design for flip chip interconnections
US6645550B1 (en) 2000-06-22 2003-11-11 Applied Materials, Inc. Method of treating a substrate
US6427623B2 (en) 2000-06-23 2002-08-06 Anelva Corporation Chemical vapor deposition system
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
JP4371543B2 (ja) 2000-06-29 2009-11-25 日本電気株式会社 リモートプラズマｃｖｄ装置及び膜形成方法
US6303418B1 (en) 2000-06-30 2001-10-16 Chartered Semiconductor Manufacturing Ltd. Method of fabricating CMOS devices featuring dual gate structures and a high dielectric constant gate insulator layer
US6835278B2 (en) 2000-07-07 2004-12-28 Mattson Technology Inc. Systems and methods for remote plasma clean
DE10032607B4 (de) 2000-07-07 2004-08-12 Leo Elektronenmikroskopie Gmbh Teilchenstrahlgerät mit einer im Ultrahochvakuum zu betreibenden Teilchenquelle und kaskadenförmige Pumpanordnung für ein solches Teilchenstrahlgerät
US6736987B1 (en) 2000-07-12 2004-05-18 Techbank Corporation Silicon etching apparatus using XeF2
US6440870B1 (en) 2000-07-12 2002-08-27 Applied Materials, Inc. Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
US6794311B2 (en) 2000-07-14 2004-09-21 Applied Materials Inc. Method and apparatus for treating low k dielectric layers to reduce diffusion
KR100366623B1 (ko) 2000-07-18 2003-01-09 삼성전자 주식회사 반도체 기판 또는 ｌｃｄ 기판의 세정방법
WO2002009171A1 (fr) 2000-07-25 2002-01-31 Ibiden Co., Ltd. Substrat ceramique pour appareil de fabrication/inspection de semi-conducteurs, element chauffant en ceramique, dispositif de retenue electrostatique sans attache et substrat pour testeur de tranches
US6764958B1 (en) 2000-07-28 2004-07-20 Applied Materials Inc. Method of depositing dielectric films
US6939434B2 (en) 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
US20020185226A1 (en) 2000-08-10 2002-12-12 Lea Leslie Michael Plasma processing apparatus
US6677242B1 (en) 2000-08-12 2004-01-13 Applied Materials Inc. Integrated shallow trench isolation approach
US6412437B1 (en) 2000-08-18 2002-07-02 Micron Technology, Inc. Plasma enhanced chemical vapor deposition reactor and plasma enhanced chemical vapor deposition process
US6446572B1 (en) 2000-08-18 2002-09-10 Tokyo Electron Limited Embedded plasma source for plasma density improvement
US6800830B2 (en) 2000-08-18 2004-10-05 Hitachi Kokusai Electric, Inc. Chemistry for boron diffusion barrier layer and method of application in semiconductor device fabrication
US6335288B1 (en) 2000-08-24 2002-01-01 Applied Materials, Inc. Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD
US6459066B1 (en) 2000-08-25 2002-10-01 Board Of Regents, The University Of Texas System Transmission line based inductively coupled plasma source with stable impedance
US6372657B1 (en) 2000-08-31 2002-04-16 Micron Technology, Inc. Method for selective etching of oxides
JP2002075972A (ja) 2000-09-04 2002-03-15 Hitachi Ltd 半導体装置の製造方法
JP4484345B2 (ja) 2000-09-11 2010-06-16 東京エレクトロン株式会社 半導体装置及びその製造方法
US6465366B1 (en) 2000-09-12 2002-10-15 Applied Materials, Inc. Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers
JP4717295B2 (ja) 2000-10-04 2011-07-06 株式会社半導体エネルギー研究所 ドライエッチング装置及びエッチング方法
US6461974B1 (en) 2000-10-06 2002-10-08 Lam Research Corporation High temperature tungsten etching process
DK200001497A (da) 2000-10-08 2002-04-09 Scanavo As Opbevaringsindretning for en databærer
JP2002115068A (ja) 2000-10-11 2002-04-19 Applied Materials Inc シャワーヘッド、基板処理装置および基板製造方法
KR100375102B1 (ko) 2000-10-18 2003-03-08 삼성전자주식회사 반도체 장치의 제조에서 화학 기상 증착 방법 및 이를수행하기 위한 장치
US6403491B1 (en) 2000-11-01 2002-06-11 Applied Materials, Inc. Etch method using a dielectric etch chamber with expanded process window
US6610362B1 (en) 2000-11-20 2003-08-26 Intel Corporation Method of forming a carbon doped oxide layer on a substrate
KR100382725B1 (ko) 2000-11-24 2003-05-09 삼성전자주식회사 클러스터화된 플라즈마 장치에서의 반도체소자의 제조방법
AUPR179500A0 (en) 2000-11-30 2000-12-21 Saintech Pty Limited Ion source
US6291348B1 (en) 2000-11-30 2001-09-18 Advanced Micro Devices, Inc. Method of forming Cu-Ca-O thin films on Cu surfaces in a chemical solution and semiconductor device thereby formed
US6544340B2 (en) 2000-12-08 2003-04-08 Applied Materials, Inc. Heater with detachable ceramic top plate
US6448537B1 (en) 2000-12-11 2002-09-10 Eric Anton Nering Single-wafer process chamber thermal convection processes
US6692903B2 (en) 2000-12-13 2004-02-17 Applied Materials, Inc Substrate cleaning apparatus and method
US6461972B1 (en) 2000-12-22 2002-10-08 Lsi Logic Corporation Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow
US6537429B2 (en) 2000-12-29 2003-03-25 Lam Research Corporation Diamond coatings on reactor wall and method of manufacturing thereof
US6533910B2 (en) 2000-12-29 2003-03-18 Lam Research Corporation Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof
US6500772B2 (en) 2001-01-08 2002-12-31 International Business Machines Corporation Methods and materials for depositing films on semiconductor substrates
US20020124867A1 (en) 2001-01-08 2002-09-12 Apl Co., Ltd. Apparatus and method for surface cleaning using plasma
FR2819341B1 (fr) 2001-01-11 2003-06-27 St Microelectronics Sa Procede d'integration d'une cellule dram
US6879981B2 (en) 2001-01-16 2005-04-12 Corigin Ltd. Sharing live data with a non cooperative DBMS
US6849854B2 (en) 2001-01-18 2005-02-01 Saintech Pty Ltd. Ion source
US6358827B1 (en) 2001-01-19 2002-03-19 Taiwan Semiconductor Manufacturing Company Method of forming a squared-off, vertically oriented polysilicon spacer gate
JP4644943B2 (ja) 2001-01-23 2011-03-09 東京エレクトロン株式会社 処理装置
US6743732B1 (en) 2001-01-26 2004-06-01 Taiwan Semiconductor Manufacturing Company Organic low K dielectric etch with NH3 chemistry
US6893969B2 (en) 2001-02-12 2005-05-17 Lam Research Corporation Use of ammonia for etching organic low-k dielectrics
US6537733B2 (en) 2001-02-23 2003-03-25 Applied Materials, Inc. Method of depositing low dielectric constant silicon carbide layers
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
JP4657473B2 (ja) 2001-03-06 2011-03-23 東京エレクトロン株式会社 プラズマ処理装置
US6348407B1 (en) 2001-03-15 2002-02-19 Chartered Semiconductor Manufacturing Inc. Method to improve adhesion of organic dielectrics in dual damascene interconnects
KR100423953B1 (ko) 2001-03-19 2004-03-24 디지웨이브 테크놀러지스 주식회사 화학기상증착장치
US6886491B2 (en) 2001-03-19 2005-05-03 Apex Co. Ltd. Plasma chemical vapor deposition apparatus
JP5013353B2 (ja) 2001-03-28 2012-08-29 隆 杉野 成膜方法及び成膜装置
US6670278B2 (en) 2001-03-30 2003-12-30 Lam Research Corporation Method of plasma etching of silicon carbide
US7084070B1 (en) 2001-03-30 2006-08-01 Lam Research Corporation Treatment for corrosion in substrate processing
US20020177321A1 (en) 2001-03-30 2002-11-28 Li Si Yi Plasma etching of silicon carbide
FR2823032B1 (fr) 2001-04-03 2003-07-11 St Microelectronics Sa Resonateur electromecanique a poutre vibrante
US20020144657A1 (en) 2001-04-05 2002-10-10 Chiang Tony P. ALD reactor employing electrostatic chuck
JP3707394B2 (ja) 2001-04-06 2005-10-19 ソニー株式会社 無電解メッキ方法
US6761796B2 (en) 2001-04-06 2004-07-13 Axcelis Technologies, Inc. Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing
JP2002319571A (ja) 2001-04-20 2002-10-31 Kawasaki Microelectronics Kk エッチング槽の前処理方法及び半導体装置の製造方法
CN1304643C (zh) 2001-04-20 2007-03-14 克里斯铝轧制品有限公司 镀覆和预处理铝件方法
US20030019428A1 (en) 2001-04-28 2003-01-30 Applied Materials, Inc. Chemical vapor deposition chamber
EP1391140B1 (en) 2001-04-30 2012-10-10 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
US6914009B2 (en) 2001-05-07 2005-07-05 Applied Materials Inc Method of making small transistor lengths
US6740601B2 (en) 2001-05-11 2004-05-25 Applied Materials Inc. HDP-CVD deposition process for filling high aspect ratio gaps
US20020170678A1 (en) 2001-05-18 2002-11-21 Toshio Hayashi Plasma processing apparatus
US20020197823A1 (en) 2001-05-18 2002-12-26 Yoo Jae-Yoon Isolation method for semiconductor device
US6717189B2 (en) 2001-06-01 2004-04-06 Ebara Corporation Electroless plating liquid and semiconductor device
US6573606B2 (en) 2001-06-14 2003-06-03 International Business Machines Corporation Chip to wiring interface with single metal alloy layer applied to surface of copper interconnect
JP2004533123A (ja) 2001-06-14 2004-10-28 マトソン テクノロジー インコーポレーテッド 銅接続用の障壁エンハンスメント工程
US6506291B2 (en) 2001-06-14 2003-01-14 Applied Materials, Inc. Substrate support with multilevel heat transfer mechanism
US20060191637A1 (en) 2001-06-21 2006-08-31 John Zajac Etching Apparatus and Process with Thickness and Uniformity Control
US6685803B2 (en) 2001-06-22 2004-02-03 Applied Materials, Inc. Plasma treatment of processing gases
US6770166B1 (en) 2001-06-29 2004-08-03 Lam Research Corp. Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor
US20030000647A1 (en) 2001-06-29 2003-01-02 Applied Materials, Inc. Substrate processing chamber
KR100400044B1 (ko) 2001-07-16 2003-09-29 삼성전자주식회사 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드
US6596599B1 (en) 2001-07-16 2003-07-22 Taiwan Semiconductor Manufacturing Company Gate stack for high performance sub-micron CMOS devices
US20030029715A1 (en) 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
US6846745B1 (en) 2001-08-03 2005-01-25 Novellus Systems, Inc. High-density plasma process for filling high aspect ratio structures
US6596654B1 (en) 2001-08-24 2003-07-22 Novellus Systems, Inc. Gap fill for high aspect ratio structures
JP3914452B2 (ja) 2001-08-07 2007-05-16 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
US6984288B2 (en) 2001-08-08 2006-01-10 Lam Research Corporation Plasma processor in plasma confinement region within a vacuum chamber
US7179556B2 (en) 2001-08-10 2007-02-20 Denso Corporation Fuel cell system
KR20040018558A (ko) 2001-08-13 2004-03-03 가부시키 가이샤 에바라 세이사꾸쇼 반도체장치와 그 제조방법 및 도금액
US20030038305A1 (en) 2001-08-21 2003-02-27 Wasshuber Christoph A. Method for manufacturing and structure of transistor with low-k spacer
US6753506B2 (en) 2001-08-23 2004-06-22 Axcelis Technologies System and method of fast ambient switching for rapid thermal processing
US6762127B2 (en) 2001-08-23 2004-07-13 Yves Pierre Boiteux Etch process for dielectric materials comprising oxidized organo silane materials
WO2003018867A1 (en) 2001-08-29 2003-03-06 Applied Materials, Inc. Semiconductor processing using an efficiently coupled gas source
US7199328B2 (en) 2001-08-29 2007-04-03 Tokyo Electron Limited Apparatus and method for plasma processing
US6796314B1 (en) 2001-09-07 2004-09-28 Novellus Systems, Inc. Using hydrogen gas in a post-etch radio frequency-plasma contact cleaning process
KR100441297B1 (ko) 2001-09-14 2004-07-23 주성엔지니어링(주) 리모트 플라즈마를 이용하는 ｃｃｐ형 ｐｅｃｖｄ장치
US20030054608A1 (en) 2001-09-17 2003-03-20 Vanguard International Semiconductor Corporation Method for forming shallow trench isolation in semiconductor device
US6555467B2 (en) 2001-09-28 2003-04-29 Sharp Laboratories Of America, Inc. Method of making air gaps copper interconnect
US6462372B1 (en) 2001-10-09 2002-10-08 Silicon-Based Technology Corp. Scaled stack-gate flash memory device
US6656837B2 (en) 2001-10-11 2003-12-02 Applied Materials, Inc. Method of eliminating photoresist poisoning in damascene applications
EP1302988A3 (de) 2001-10-12 2007-01-24 Bayer MaterialScience AG Photovoltaik-Module mit einer thermoplastischen Schmelzklebeschicht sowie ein Verfahren zu ihrer Herstellung
US6855906B2 (en) 2001-10-16 2005-02-15 Adam Alexander Brailove Induction plasma reactor
US20030072639A1 (en) 2001-10-17 2003-04-17 Applied Materials, Inc. Substrate support
KR100433091B1 (ko) 2001-10-23 2004-05-28 주식회사 하이닉스반도체 반도체소자의 도전배선 형성방법
JP3759895B2 (ja) 2001-10-24 2006-03-29 松下電器産業株式会社 エッチング方法
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US20030087488A1 (en) 2001-11-07 2003-05-08 Tokyo Electron Limited Inductively coupled plasma source for improved process uniformity
JP4040284B2 (ja) 2001-11-08 2008-01-30 住友大阪セメント株式会社 プラズマ発生用電極内蔵型サセプタ及びその製造方法
JP2003158080A (ja) 2001-11-22 2003-05-30 Mitsubishi Electric Corp 半導体製造装置、半導体製造装置における堆積物除去方法、および半導体装置の製造方法
KR100443121B1 (ko) 2001-11-29 2004-08-04 삼성전자주식회사 반도체 공정의 수행 방법 및 반도체 공정 장치
US7017514B1 (en) * 2001-12-03 2006-03-28 Novellus Systems, Inc. Method and apparatus for plasma optimization in water processing
US6794290B1 (en) 2001-12-03 2004-09-21 Novellus Systems, Inc. Method of chemical modification of structure topography
KR100641762B1 (ko) 2001-12-07 2006-11-06 동경 엘렉트론 주식회사 절연막의 질화 방법, 반도체 장치 및 반도체 장치의 제조방법, 기판 처리 장치 및 기판 처리 방법
JP4392852B2 (ja) 2001-12-07 2010-01-06 東京エレクトロン株式会社 プラズマ処理装置に用いられる排気リング機構及びプラズマ処理装置
US6905968B2 (en) 2001-12-12 2005-06-14 Applied Materials, Inc. Process for selectively etching dielectric layers
WO2003052808A2 (en) 2001-12-13 2003-06-26 Applied Materials, Inc. Self-aligned contact etch with high sensitivity to nitride shoulder
US6890850B2 (en) 2001-12-14 2005-05-10 Applied Materials, Inc. Method of depositing dielectric materials in damascene applications
US6605874B2 (en) 2001-12-19 2003-08-12 Intel Corporation Method of making semiconductor device using an interconnect
WO2003054912A1 (en) 2001-12-20 2003-07-03 Tokyo Electron Limited Method and apparatus comprising a magnetic filter for plasma processing a workpiece
US20030116087A1 (en) 2001-12-21 2003-06-26 Nguyen Anh N. Chamber hardware design for titanium nitride atomic layer deposition
US20030116439A1 (en) 2001-12-21 2003-06-26 International Business Machines Corporation Method for forming encapsulated metal interconnect structures in semiconductor integrated circuit devices
JP2003197615A (ja) 2001-12-26 2003-07-11 Tokyo Electron Ltd プラズマ処理装置およびそのクリーニング方法
KR100442167B1 (ko) 2001-12-26 2004-07-30 주성엔지니어링(주) 자연산화막 제거방법
KR100484258B1 (ko) 2001-12-27 2005-04-22 주식회사 하이닉스반도체 반도체 소자 제조 방법
US20030124842A1 (en) 2001-12-27 2003-07-03 Applied Materials, Inc. Dual-gas delivery system for chemical vapor deposition processes
US6828241B2 (en) 2002-01-07 2004-12-07 Applied Materials, Inc. Efficient cleaning by secondary in-situ activation of etch precursor from remote plasma source
US6942929B2 (en) 2002-01-08 2005-09-13 Nianci Han Process chamber having component with yttrium-aluminum coating
US6827815B2 (en) 2002-01-15 2004-12-07 Applied Materials, Inc. Showerhead assembly for a processing chamber
US6730175B2 (en) 2002-01-22 2004-05-04 Applied Materials, Inc. Ceramic substrate support
US6869880B2 (en) 2002-01-24 2005-03-22 Applied Materials, Inc. In situ application of etch back for improved deposition into high-aspect-ratio features
US20040060514A1 (en) 2002-01-25 2004-04-01 Applied Materials, Inc. A Delaware Corporation Gas distribution showerhead
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6866746B2 (en) 2002-01-26 2005-03-15 Applied Materials, Inc. Clamshell and small volume chamber with fixed substrate support
US7138014B2 (en) 2002-01-28 2006-11-21 Applied Materials, Inc. Electroless deposition apparatus
TWI239794B (en) 2002-01-30 2005-09-11 Alps Electric Co Ltd Plasma processing apparatus and method
US7226504B2 (en) 2002-01-31 2007-06-05 Sharp Laboratories Of America, Inc. Method to form thick relaxed SiGe layer with trench structure
US6632325B2 (en) 2002-02-07 2003-10-14 Applied Materials, Inc. Article for use in a semiconductor processing chamber and method of fabricating same
US7033447B2 (en) 2002-02-08 2006-04-25 Applied Materials, Inc. Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus
US7048814B2 (en) 2002-02-08 2006-05-23 Applied Materials, Inc. Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus
US20080213496A1 (en) 2002-02-14 2008-09-04 Applied Materials, Inc. Method of coating semiconductor processing apparatus with protective yttrium-containing coatings
US7479304B2 (en) 2002-02-14 2009-01-20 Applied Materials, Inc. Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate
US6821348B2 (en) 2002-02-14 2004-11-23 3M Innovative Properties Company In-line deposition processes for circuit fabrication
US6656848B1 (en) 2002-02-22 2003-12-02 Scientific Systems Research Limited Plasma chamber conditioning
JP3921234B2 (ja) 2002-02-28 2007-05-30 キヤノンアネルバ株式会社 表面処理装置及びその製造方法
US6677167B2 (en) 2002-03-04 2004-01-13 Hitachi High-Technologies Corporation Wafer processing apparatus and a wafer stage and a wafer processing method
US6646233B2 (en) 2002-03-05 2003-11-11 Hitachi High-Technologies Corporation Wafer stage for wafer processing apparatus and wafer processing method
US20060252265A1 (en) 2002-03-06 2006-11-09 Guangxiang Jin Etching high-kappa dielectric materials with good high-kappa foot control and silicon recess control
US20030168174A1 (en) 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system
US7252011B2 (en) 2002-03-11 2007-08-07 Mks Instruments, Inc. Surface area deposition trap
US7256370B2 (en) 2002-03-15 2007-08-14 Steed Technology, Inc. Vacuum thermal annealer
JP3813562B2 (ja) 2002-03-15 2006-08-23 富士通株式会社 半導体装置及びその製造方法
US20040003828A1 (en) 2002-03-21 2004-01-08 Jackson David P. Precision surface treatments using dense fluids and a plasma
US6913651B2 (en) 2002-03-22 2005-07-05 Blue29, Llc Apparatus and method for electroless deposition of materials on semiconductor substrates
JP4053326B2 (ja) 2002-03-27 2008-02-27 東芝松下ディスプレイテクノロジー株式会社 薄膜トランジスタの製造方法
US6883733B1 (en) 2002-03-28 2005-04-26 Novellus Systems, Inc. Tapered post, showerhead design to improve mixing on dual plenum showerheads
US6541397B1 (en) 2002-03-29 2003-04-01 Applied Materials, Inc. Removable amorphous carbon CMP stop
US6843858B2 (en) 2002-04-02 2005-01-18 Applied Materials, Inc. Method of cleaning a semiconductor processing chamber
US20030190426A1 (en) 2002-04-03 2003-10-09 Deenesh Padhi Electroless deposition method
US6921556B2 (en) 2002-04-12 2005-07-26 Asm Japan K.K. Method of film deposition using single-wafer-processing type CVD
US6616967B1 (en) 2002-04-15 2003-09-09 Texas Instruments Incorporated Method to achieve continuous hydrogen saturation in sparingly used electroless nickel plating process
US6897532B1 (en) 2002-04-15 2005-05-24 Cypress Semiconductor Corp. Magnetic tunneling junction configuration and a method for making the same
US6818562B2 (en) 2002-04-19 2004-11-16 Applied Materials Inc Method and apparatus for tuning an RF matching network in a plasma enhanced semiconductor wafer processing system
US7013834B2 (en) 2002-04-19 2006-03-21 Nordson Corporation Plasma treatment system
JP3773189B2 (ja) 2002-04-24 2006-05-10 独立行政法人科学技術振興機構 窓型プローブ、プラズマ監視装置、及び、プラズマ処理装置
KR100448714B1 (ko) 2002-04-24 2004-09-13 삼성전자주식회사 다층 나노라미네이트 구조를 갖는 반도체 장치의 절연막및 그의 형성방법
US6794889B2 (en) 2002-04-26 2004-09-21 Agilent Technologies, Inc. Unified apparatus and method to assure probe card-to-wafer parallelism in semiconductor automatic wafer test, probe card measurement systems, and probe card manufacturing
US6528409B1 (en) 2002-04-29 2003-03-04 Advanced Micro Devices, Inc. Interconnect structure formed in porous dielectric material with minimized degradation and electromigration
US6908862B2 (en) 2002-05-03 2005-06-21 Applied Materials, Inc. HDP-CVD dep/etch/dep process for improved deposition into high aspect ratio features
JP2003324072A (ja) 2002-05-07 2003-11-14 Nec Electronics Corp 半導体製造装置
US20030215570A1 (en) 2002-05-16 2003-11-20 Applied Materials, Inc. Deposition of silicon nitride
TW538497B (en) 2002-05-16 2003-06-21 Nanya Technology Corp Method to form a bottle-shaped trench
US6825051B2 (en) 2002-05-17 2004-11-30 Asm America, Inc. Plasma etch resistant coating and process
JP2003338491A (ja) 2002-05-21 2003-11-28 Mitsubishi Electric Corp プラズマ処理装置および半導体装置の製造方法
US6500728B1 (en) 2002-05-24 2002-12-31 Taiwan Semiconductor Manufacturing Company Shallow trench isolation (STI) module to improve contact etch process window
US6673200B1 (en) 2002-05-30 2004-01-06 Lsi Logic Corporation Method of reducing process plasma damage using optical spectroscopy
US20030224217A1 (en) 2002-05-31 2003-12-04 Applied Materials, Inc. Metal nitride formation
WO2003107409A1 (ja) 2002-06-01 2003-12-24 積水化学工業株式会社 酸化膜形成方法及び酸化膜形成装置
KR100434110B1 (ko) 2002-06-04 2004-06-04 삼성전자주식회사 반도체 장치의 제조방법
US20030230385A1 (en) 2002-06-13 2003-12-18 Applied Materials, Inc. Electro-magnetic configuration for uniformity enhancement in a dual chamber plasma processing system
US6924191B2 (en) 2002-06-20 2005-08-02 Applied Materials, Inc. Method for fabricating a gate structure of a field effect transistor
US7311797B2 (en) 2002-06-27 2007-12-25 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
DE10229037A1 (de) 2002-06-28 2004-01-29 Robert Bosch Gmbh Vorrichtung und Verfahren zur Erzeugung von Chlortrifluorid und Anlage zur Ätzung von Halbleitersubstraten mit dieser Vorrichtung
US20040072446A1 (en) 2002-07-02 2004-04-15 Applied Materials, Inc. Method for fabricating an ultra shallow junction of a field effect transistor
US6767844B2 (en) 2002-07-03 2004-07-27 Taiwan Semiconductor Manufacturing Co., Ltd Plasma chamber equipped with temperature-controlled focus ring and method of operating
US6838125B2 (en) 2002-07-10 2005-01-04 Applied Materials, Inc. Method of film deposition using activated precursor gases
US7357138B2 (en) 2002-07-18 2008-04-15 Air Products And Chemicals, Inc. Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
US7988398B2 (en) 2002-07-22 2011-08-02 Brooks Automation, Inc. Linear substrate transport apparatus
US6818561B1 (en) 2002-07-30 2004-11-16 Advanced Micro Devices, Inc. Control methodology using optical emission spectroscopy derived data, system for performing same
EP1585999A4 (en) 2002-08-02 2008-09-17 E A Fischione Instr Inc METHOD AND DEVICE FOR PREPARING SAMPLES FOR MICROSCOPY
US20040058293A1 (en) 2002-08-06 2004-03-25 Tue Nguyen Assembly line processing system
US6921555B2 (en) 2002-08-06 2005-07-26 Tegal Corporation Method and system for sequential processing in a two-compartment chamber
US20060040055A1 (en) 2002-08-06 2006-02-23 Tegal Corporation Method and system for sequential processing in a two-compartment chamber
US20060046412A1 (en) 2002-08-06 2006-03-02 Tegal Corporation Method and system for sequential processing in a two-compartment chamber
JP3861036B2 (ja) 2002-08-09 2006-12-20 三菱重工業株式会社 プラズマｃｖｄ装置
US7541270B2 (en) 2002-08-13 2009-06-02 Micron Technology, Inc. Methods for forming openings in doped silicon dioxide
US20040033677A1 (en) 2002-08-14 2004-02-19 Reza Arghavani Method and apparatus to prevent lateral oxidation in a transistor utilizing an ultra thin oxygen-diffusion barrier
US7192486B2 (en) * 2002-08-15 2007-03-20 Applied Materials, Inc. Clog-resistant gas delivery system
US6781173B2 (en) 2002-08-29 2004-08-24 Micron Technology, Inc. MRAM sense layer area control
US6946033B2 (en) 2002-09-16 2005-09-20 Applied Materials Inc. Heated gas distribution plate for a processing chamber
JP3991315B2 (ja) 2002-09-17 2007-10-17 キヤノンアネルバ株式会社 薄膜形成装置及び方法
JP3832409B2 (ja) 2002-09-18 2006-10-11 住友電気工業株式会社 ウエハー保持体及び半導体製造装置
US7335609B2 (en) 2004-08-27 2008-02-26 Applied Materials, Inc. Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials
JP4260450B2 (ja) 2002-09-20 2009-04-30 東京エレクトロン株式会社 真空処理装置における静電チャックの製造方法
US7166200B2 (en) 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US20070051471A1 (en) 2002-10-04 2007-03-08 Applied Materials, Inc. Methods and apparatus for stripping
US6991959B2 (en) 2002-10-10 2006-01-31 Asm Japan K.K. Method of manufacturing silicon carbide film
KR100500852B1 (ko) 2002-10-10 2005-07-12 최대규 원격 플라즈마 발생기
JP4606713B2 (ja) 2002-10-17 2011-01-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US6699380B1 (en) 2002-10-18 2004-03-02 Applied Materials Inc. Modular electrochemical processing system
TW587139B (en) 2002-10-18 2004-05-11 Winbond Electronics Corp Gas distribution system and method for the plasma gas in the chamber
US7628897B2 (en) 2002-10-23 2009-12-08 Applied Materials, Inc. Reactive ion etching for semiconductor device feature topography modification
US6802944B2 (en) 2002-10-23 2004-10-12 Applied Materials, Inc. High density plasma CVD process for gapfill into high aspect ratio features
US6853043B2 (en) 2002-11-04 2005-02-08 Applied Materials, Inc. Nitrogen-free antireflective coating for use with photolithographic patterning
JP2004165317A (ja) 2002-11-12 2004-06-10 Renesas Technology Corp 半導体装置およびその製造方法
EP1420080A3 (en) 2002-11-14 2005-11-09 Applied Materials, Inc. Apparatus and method for hybrid chemical deposition processes
KR100862658B1 (ko) 2002-11-15 2008-10-10 삼성전자주식회사 반도체 처리 시스템의 가스 주입 장치
US6861332B2 (en) 2002-11-21 2005-03-01 Intel Corporation Air gap interconnect method
US6902628B2 (en) 2002-11-25 2005-06-07 Applied Materials, Inc. Method of cleaning a coated process chamber component
JP2004179426A (ja) 2002-11-27 2004-06-24 Tokyo Electron Ltd 基板処理装置のクリーニング方法
US6713873B1 (en) 2002-11-27 2004-03-30 Intel Corporation Adhesion between dielectric materials
TW561068B (en) 2002-11-29 2003-11-11 Au Optronics Corp Nozzle head with excellent corrosion resistance for dry etching process and anti-corrosion method thereof
US7347901B2 (en) 2002-11-29 2008-03-25 Tokyo Electron Limited Thermally zoned substrate holder assembly
US7396773B1 (en) 2002-12-06 2008-07-08 Cypress Semiconductor Company Method for cleaning a gate stack
US20040118344A1 (en) 2002-12-20 2004-06-24 Lam Research Corporation System and method for controlling plasma with an adjustable coupling to ground circuit
DE10260352A1 (de) 2002-12-20 2004-07-15 Infineon Technologies Ag Verfahren zum Herstellen einer Kondensatoranordnung und Kondensatoranordnung
US20040118519A1 (en) 2002-12-20 2004-06-24 Applied Materials, Inc. Blocker plate bypass design to improve clean rate at the edge of the chamber
US6806949B2 (en) 2002-12-31 2004-10-19 Tokyo Electron Limited Monitoring material buildup on system components by optical emission
KR100964398B1 (ko) 2003-01-03 2010-06-17 삼성전자주식회사 유도결합형 안테나 및 이를 채용한 플라즈마 처리장치
US6720213B1 (en) 2003-01-15 2004-04-13 International Business Machines Corporation Low-K gate spacers by fluorine implantation
US6808748B2 (en) 2003-01-23 2004-10-26 Applied Materials, Inc. Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology
US7500445B2 (en) 2003-01-27 2009-03-10 Applied Materials, Inc. Method and apparatus for cleaning a CVD chamber
US7316761B2 (en) 2003-02-03 2008-01-08 Applied Materials, Inc. Apparatus for uniformly etching a dielectric layer
US7205248B2 (en) 2003-02-04 2007-04-17 Micron Technology, Inc. Method of eliminating residual carbon from flowable oxide fill
US7078351B2 (en) 2003-02-10 2006-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist intensive patterning and processing
US20060137613A1 (en) 2004-01-27 2006-06-29 Shigeru Kasai Plasma generating apparatus, plasma generating method and remote plasma processing apparatus
US7604708B2 (en) 2003-02-14 2009-10-20 Applied Materials, Inc. Cleaning of native oxide with hydrogen-containing radicals
US6982175B2 (en) 2003-02-14 2006-01-03 Unaxis Usa Inc. End point detection in time division multiplexed etch processes
US20040195208A1 (en) 2003-02-15 2004-10-07 Pavel Elizabeth G. Method and apparatus for performing hydrogen optical emission endpoint detection for photoresist strip and residue removal
US6969619B1 (en) 2003-02-18 2005-11-29 Novellus Systems, Inc. Full spectrum endpoint detection
KR100739837B1 (ko) 2003-02-19 2007-07-13 마쯔시다덴기산교 가부시키가이샤 불순물 도입 방법 및 불순물 도입 장치
US20040163590A1 (en) * 2003-02-24 2004-08-26 Applied Materials, Inc. In-situ health check of liquid injection vaporizer
US7212078B2 (en) 2003-02-25 2007-05-01 Tokyo Electron Limited Method and assembly for providing impedance matching network and network assembly
US20040163601A1 (en) 2003-02-26 2004-08-26 Masanori Kadotani Plasma processing apparatus
DE10308870B4 (de) 2003-02-28 2006-07-27 Austriamicrosystems Ag Bipolartransistor mit verbessertem Basis-Emitter-Übergang und Verfahren zur Herstellung
US6913992B2 (en) 2003-03-07 2005-07-05 Applied Materials, Inc. Method of modifying interlayer adhesion
CN100388434C (zh) 2003-03-12 2008-05-14 东京毅力科创株式会社 半导体处理用的基板保持结构和等离子体处理装置
US6951821B2 (en) 2003-03-17 2005-10-04 Tokyo Electron Limited Processing system and method for chemically treating a substrate
US20040182315A1 (en) 2003-03-17 2004-09-23 Tokyo Electron Limited Reduced maintenance chemical oxide removal (COR) processing system
JP2004296467A (ja) 2003-03-25 2004-10-21 Hitachi Kokusai Electric Inc 基板処理装置
US20040187787A1 (en) 2003-03-31 2004-09-30 Dawson Keith E. Substrate support having temperature controlled substrate support surface
US6844929B2 (en) 2003-04-09 2005-01-18 Phase Shift Technology Apparatus and method for holding and transporting thin opaque plates
US7037376B2 (en) 2003-04-11 2006-05-02 Applied Materials Inc. Backflush chamber clean
KR100789063B1 (ko) 2003-04-11 2007-12-26 호야 가부시키가이샤 크롬계 박막의 에칭방법 및 포토마스크의 제조방법
US7126225B2 (en) 2003-04-15 2006-10-24 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for manufacturing a semiconductor wafer with reduced delamination and peeling
US6872909B2 (en) 2003-04-16 2005-03-29 Applied Science And Technology, Inc. Toroidal low-field reactive gas and plasma source having a dielectric vacuum vessel
US6942753B2 (en) 2003-04-16 2005-09-13 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
TWI227565B (en) 2003-04-16 2005-02-01 Au Optronics Corp Low temperature poly-Si thin film transistor and method of manufacturing the same
JP5404984B2 (ja) 2003-04-24 2014-02-05 東京エレクトロン株式会社 プラズマモニタリング方法、プラズマモニタリング装置及びプラズマ処理装置
US20040211357A1 (en) 2003-04-24 2004-10-28 Gadgil Pradad N. Method of manufacturing a gap-filled structure of a semiconductor device
US6830624B2 (en) 2003-05-02 2004-12-14 Applied Materials, Inc. Blocker plate by-pass for remote plasma clean
US7008877B2 (en) 2003-05-05 2006-03-07 Unaxis Usa Inc. Etching of chromium layers on photomasks utilizing high density plasma and low frequency RF bias
US6903511B2 (en) 2003-05-06 2005-06-07 Zond, Inc. Generation of uniformly-distributed plasma
DE10320472A1 (de) 2003-05-08 2004-12-02 Kolektor D.O.O. Plasmabehandlung zur Reinigung von Kupfer oder Nickel
US7045020B2 (en) 2003-05-22 2006-05-16 Applied Materials, Inc. Cleaning a component of a process chamber
US6713835B1 (en) 2003-05-22 2004-03-30 International Business Machines Corporation Method for manufacturing a multi-level interconnect structure
KR100965758B1 (ko) 2003-05-22 2010-06-24 주성엔지니어링(주) 액정표시장치용 플라즈마 강화 화학기상증착 장치의샤워헤드 어셈블리
US8580076B2 (en) 2003-05-22 2013-11-12 Lam Research Corporation Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith
US20040237897A1 (en) 2003-05-27 2004-12-02 Hiroji Hanawa High-Frequency electrostatically shielded toroidal plasma and radical source
WO2004107394A2 (ja) 2003-05-27 2004-12-09 Matsushita Electric Works, Ltd. プラズマ処理装置、プラズマ生成用の反応器の製造方法、及びプラズマ処理方法
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7067432B2 (en) 2003-06-26 2006-06-27 Applied Materials, Inc. Methodology for in-situ and real-time chamber condition monitoring and process recovery during plasma processing
KR100853388B1 (ko) 2003-06-27 2008-08-21 도쿄엘렉트론가부시키가이샤 클리닝 방법 및 기판 처리 방법
US7151277B2 (en) 2003-07-03 2006-12-19 The Regents Of The University Of California Selective etching of silicon carbide films
JP4245996B2 (ja) 2003-07-07 2009-04-02 株式会社荏原製作所 無電解めっきによるキャップ膜の形成方法およびこれに用いる装置
US7368392B2 (en) 2003-07-10 2008-05-06 Applied Materials, Inc. Method of fabricating a gate structure of a field effect transistor having a metal-containing gate electrode
US6995073B2 (en) 2003-07-16 2006-02-07 Intel Corporation Air gap integration
JP3866694B2 (ja) 2003-07-30 2007-01-10 株式会社日立ハイテクノロジーズ Ｌｓｉデバイスのエッチング方法および装置
US7256134B2 (en) 2003-08-01 2007-08-14 Applied Materials, Inc. Selective etching of carbon-doped low-k dielectrics
JP4239750B2 (ja) 2003-08-13 2009-03-18 セイコーエプソン株式会社 マイクロレンズ及びマイクロレンズの製造方法、光学装置、光伝送装置、レーザプリンタ用ヘッド、並びにレーザプリンタ
US20050035455A1 (en) 2003-08-14 2005-02-17 Chenming Hu Device with low-k dielectric in close proximity thereto and its method of fabrication
US7182816B2 (en) 2003-08-18 2007-02-27 Tokyo Electron Limited Particulate reduction using temperature-controlled chamber shield
US7361865B2 (en) 2003-08-27 2008-04-22 Kyocera Corporation Heater for heating a wafer and method for fabricating the same
US7521000B2 (en) 2003-08-28 2009-04-21 Applied Materials, Inc. Process for etching photomasks
US6903031B2 (en) 2003-09-03 2005-06-07 Applied Materials, Inc. In-situ-etch-assisted HDP deposition using SiF4 and hydrogen
KR20060064067A (ko) 2003-09-03 2006-06-12 동경 엘렉트론 주식회사 가스 처리 장치 및 처리 가스 토출 기구의 방열 방법
US7282244B2 (en) 2003-09-05 2007-10-16 General Electric Company Replaceable plate expanded thermal plasma apparatus and method
KR100518594B1 (ko) 2003-09-09 2005-10-04 삼성전자주식회사 로컬 ｓｏｎｏｓ형 비휘발성 메모리 소자 및 그 제조방법
US7030034B2 (en) 2003-09-18 2006-04-18 Micron Technology, Inc. Methods of etching silicon nitride substantially selectively relative to an oxide of aluminum
JP2005101141A (ja) 2003-09-24 2005-04-14 Renesas Technology Corp 半導体集積回路装置およびその製造方法
US6967405B1 (en) 2003-09-24 2005-11-22 Yongsik Yu Film for copper diffusion barrier
US7371688B2 (en) 2003-09-30 2008-05-13 Air Products And Chemicals, Inc. Removal of transition metal ternary and/or quaternary barrier materials from a substrate
US7071532B2 (en) 2003-09-30 2006-07-04 International Business Machines Corporation Adjustable self-aligned air gap dielectric for low capacitance wiring
KR20030083663A (ko) 2003-10-04 2003-10-30 삼영플랜트주식회사 건설폐기물로부터 시멘트 페이스트 및 모르타르가 제거된재생골재 및 모래를 생산하는 방법 및 장치
JP4399227B2 (ja) 2003-10-06 2010-01-13 株式会社フジキン チャンバの内圧制御装置及び内圧被制御式チャンバ
US20050087517A1 (en) 2003-10-09 2005-04-28 Andrew Ott Adhesion between carbon doped oxide and etch stop layers
US7408225B2 (en) 2003-10-09 2008-08-05 Asm Japan K.K. Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms
US7581511B2 (en) 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
US7125792B2 (en) 2003-10-14 2006-10-24 Infineon Technologies Ag Dual damascene structure and method
US7465358B2 (en) 2003-10-15 2008-12-16 Applied Materials, Inc. Measurement techniques for controlling aspects of a electroless deposition process
US20070111519A1 (en) 2003-10-15 2007-05-17 Applied Materials, Inc. Integrated electroless deposition system
JP2005129666A (ja) 2003-10-22 2005-05-19 Canon Inc 処理方法及び装置
JP4306403B2 (ja) 2003-10-23 2009-08-05 東京エレクトロン株式会社 シャワーヘッド構造及びこれを用いた成膜装置
JP2005129688A (ja) 2003-10-23 2005-05-19 Hitachi Ltd 半導体装置の製造方法
US7053994B2 (en) 2003-10-28 2006-05-30 Lam Research Corporation Method and apparatus for etch endpoint detection
KR100561848B1 (ko) 2003-11-04 2006-03-16 삼성전자주식회사 헬리컬 공진기형 플라즈마 처리 장치
US7709392B2 (en) 2003-11-05 2010-05-04 Taiwan Semiconductor Manufacturing Co., Ltd. Low K dielectric surface damage control
JP4273932B2 (ja) 2003-11-07 2009-06-03 株式会社島津製作所 表面波励起プラズマｃｖｄ装置
US20050103267A1 (en) 2003-11-14 2005-05-19 Hur Gwang H. Flat panel display manufacturing apparatus
JP4256763B2 (ja) 2003-11-19 2009-04-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US20050145341A1 (en) 2003-11-19 2005-07-07 Masaki Suzuki Plasma processing apparatus
JP4393844B2 (ja) 2003-11-19 2010-01-06 東京エレクトロン株式会社 プラズマ成膜装置及びプラズマ成膜方法
KR100558925B1 (ko) 2003-11-24 2006-03-10 세메스 주식회사 웨이퍼 에지 식각 장치
US20050109276A1 (en) 2003-11-25 2005-05-26 Applied Materials, Inc. Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber
US20050112876A1 (en) 2003-11-26 2005-05-26 Chih-Ta Wu Method to form a robust TiCI4 based CVD TiN film
US7431966B2 (en) 2003-12-09 2008-10-07 Micron Technology, Inc. Atomic layer deposition method of depositing an oxide on a substrate
US7081407B2 (en) 2003-12-16 2006-07-25 Lam Research Corporation Method of preventing damage to porous low-k materials during resist stripping
KR100546401B1 (ko) 2003-12-17 2006-01-26 삼성전자주식회사 자기정렬된 전하트랩층을 포함하는 반도체 메모리 소자 및그 제조방법
US7220497B2 (en) 2003-12-18 2007-05-22 Lam Research Corporation Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components
US6958286B2 (en) 2004-01-02 2005-10-25 International Business Machines Corporation Method of preventing surface roughening during hydrogen prebake of SiGe substrates
US6893967B1 (en) 2004-01-13 2005-05-17 Advanced Micro Devices, Inc. L-shaped spacer incorporating or patterned using amorphous carbon or CVD organic materials
US6852584B1 (en) 2004-01-14 2005-02-08 Tokyo Electron Limited Method of trimming a gate electrode structure
WO2005072211A2 (en) 2004-01-20 2005-08-11 Mattson Technology, Inc. System and method for removal of photoresist and residues following contact etch with a stop layer present
US20060033678A1 (en) 2004-01-26 2006-02-16 Applied Materials, Inc. Integrated electroless deposition system
US7012027B2 (en) 2004-01-27 2006-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Zirconium oxide and hafnium oxide etching using halogen containing chemicals
US7064078B2 (en) 2004-01-30 2006-06-20 Applied Materials Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme
EP1720202A4 (en) 2004-02-09 2009-04-29 Found Advancement Int Science METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND PHOTOGRAVIDE METHOD OF INSULATING FILM
US7291550B2 (en) 2004-02-13 2007-11-06 Chartered Semiconductor Manufacturing Ltd. Method to form a contact hole
US7015415B2 (en) 2004-02-18 2006-03-21 Dry Plasma Systems, Inc. Higher power density downstream plasma
JP4707959B2 (ja) 2004-02-20 2011-06-22 日本エー・エス・エム株式会社 シャワープレート、プラズマ処理装置及びプラズマ処理方法
US20060054280A1 (en) 2004-02-23 2006-03-16 Jang Geun-Ha Apparatus of manufacturing display substrate and showerhead assembly equipped therein
JP4698251B2 (ja) 2004-02-24 2011-06-08 アプライド マテリアルズ インコーポレイテッド 可動又は柔軟なシャワーヘッド取り付け
US20050230350A1 (en) 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US7780793B2 (en) 2004-02-26 2010-08-24 Applied Materials, Inc. Passivation layer formation by plasma clean process to reduce native oxide growth
US20060051966A1 (en) 2004-02-26 2006-03-09 Applied Materials, Inc. In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
US20070123051A1 (en) 2004-02-26 2007-05-31 Reza Arghavani Oxide etch with nh4-nf3 chemistry
JP4879159B2 (ja) 2004-03-05 2012-02-22 アプライド マテリアルズ インコーポレイテッド アモルファス炭素膜堆積のためのｃｖｄプロセス
US8037896B2 (en) 2004-03-09 2011-10-18 Mks Instruments, Inc. Pressure regulation in remote zones
US7196342B2 (en) 2004-03-10 2007-03-27 Cymer, Inc. Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source
US20060081337A1 (en) 2004-03-12 2006-04-20 Shinji Himori Capacitive coupling plasma processing apparatus
US7682985B2 (en) 2004-03-17 2010-03-23 Lam Research Corporation Dual doped polysilicon and silicon germanium etch
US7109521B2 (en) 2004-03-18 2006-09-19 Cree, Inc. Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
US7582555B1 (en) 2005-12-29 2009-09-01 Novellus Systems, Inc. CVD flowable gap fill
US7244474B2 (en) 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US7695590B2 (en) 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US7291360B2 (en) 2004-03-26 2007-11-06 Applied Materials, Inc. Chemical vapor deposition plasma process using plural ion shower grids
US7697260B2 (en) 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
US7358192B2 (en) 2004-04-08 2008-04-15 Applied Materials, Inc. Method and apparatus for in-situ film stack processing
JP4761723B2 (ja) 2004-04-12 2011-08-31 日本碍子株式会社 基板加熱装置
US7273526B2 (en) 2004-04-15 2007-09-25 Asm Japan K.K. Thin-film deposition apparatus
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US7785672B2 (en) 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
US7018941B2 (en) 2004-04-21 2006-03-28 Applied Materials, Inc. Post treatment of low k dielectric films
TWI249774B (en) 2004-04-23 2006-02-21 Nanya Technology Corp Forming method of self-aligned contact for semiconductor device
JP3998003B2 (ja) 2004-04-23 2007-10-24 ソニー株式会社 プラズマエッチング法
US7115974B2 (en) 2004-04-27 2006-10-03 Taiwan Semiconductor Manfacturing Company, Ltd. Silicon oxycarbide and silicon carbonitride based materials for MOS devices
US20050238807A1 (en) 2004-04-27 2005-10-27 Applied Materials, Inc. Refurbishment of a coated chamber component
US7708859B2 (en) 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
US20050241579A1 (en) 2004-04-30 2005-11-03 Russell Kidd Face shield to improve uniformity of blanket CVD processes
US7449220B2 (en) 2004-04-30 2008-11-11 Oc Oerlikon Blazers Ag Method for manufacturing a plate-shaped workpiece
WO2005112092A2 (en) 2004-05-11 2005-11-24 Applied Materials, Inc. CARBON-DOPED-Si OXIDE ETCH USING H2 ADDITIVE IN FLUOROCARBON ETCH CHEMISTRY
US8074599B2 (en) 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US8328939B2 (en) 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US20050252449A1 (en) * 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
KR100580584B1 (ko) 2004-05-21 2006-05-16 삼성전자주식회사 리모트 플라즈마 발생 튜브의 표면 세정 방법과 이를이용하는 기판 처리 방법 및 기판 처리 장치
US7691686B2 (en) 2004-05-21 2010-04-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7049200B2 (en) 2004-05-25 2006-05-23 Applied Materials Inc. Method for forming a low thermal budget spacer
KR100624566B1 (ko) 2004-05-31 2006-09-19 주식회사 하이닉스반도체 커패시터 상부에 유동성 절연막을 갖는 반도체소자 및 그제조 방법
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
US7651583B2 (en) 2004-06-04 2010-01-26 Tokyo Electron Limited Processing system and method for treating a substrate
US20050274324A1 (en) 2004-06-04 2005-12-15 Tokyo Electron Limited Plasma processing apparatus and mounting unit thereof
US20050274396A1 (en) 2004-06-09 2005-12-15 Hong Shih Methods for wet cleaning quartz surfaces of components for plasma processing chambers
US7226852B1 (en) 2004-06-10 2007-06-05 Lam Research Corporation Preventing damage to low-k materials during resist stripping
US7430496B2 (en) 2004-06-16 2008-09-30 Tokyo Electron Limited Method and apparatus for using a pressure control system to monitor a plasma processing system
US7253107B2 (en) 2004-06-17 2007-08-07 Asm International N.V. Pressure control system
US7122949B2 (en) 2004-06-21 2006-10-17 Neocera, Inc. Cylindrical electron beam generating/triggering device and method for generation of electrons
US20050284573A1 (en) 2004-06-24 2005-12-29 Egley Fred D Bare aluminum baffles for resist stripping chambers
US7220687B2 (en) 2004-06-25 2007-05-22 Applied Materials, Inc. Method to improve water-barrier performance by changing film surface morphology
US20060005856A1 (en) 2004-06-29 2006-01-12 Applied Materials, Inc. Reduction of reactive gas attack on substrate heater
US8349128B2 (en) 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
US20060000802A1 (en) 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
US7097779B2 (en) 2004-07-06 2006-08-29 Tokyo Electron Limited Processing system and method for chemically treating a TERA layer
CN101076614A (zh) 2004-07-07 2007-11-21 莫门蒂夫性能材料股份有限公司 基底上的保护涂层及其制备方法
JP2006049817A (ja) 2004-07-07 2006-02-16 Showa Denko Kk プラズマ処理方法およびプラズマエッチング方法
US7845309B2 (en) 2004-07-13 2010-12-07 Nordson Corporation Ultra high speed uniform plasma processing system
KR100614648B1 (ko) 2004-07-15 2006-08-23 삼성전자주식회사 반도체 소자 제조에 사용되는 기판 처리 장치
KR100584485B1 (ko) 2004-07-20 2006-05-29 동부일렉트로닉스 주식회사 반도체 소자의 금속 부식 방지 방법
US7767561B2 (en) 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
US20060016783A1 (en) 2004-07-22 2006-01-26 Dingjun Wu Process for titanium nitride removal
JP4492947B2 (ja) 2004-07-23 2010-06-30 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7217626B2 (en) 2004-07-26 2007-05-15 Texas Instruments Incorporated Transistor fabrication methods using dual sidewall spacers
JP4579611B2 (ja) 2004-07-26 2010-11-10 株式会社日立ハイテクノロジーズ ドライエッチング方法
US7381291B2 (en) 2004-07-29 2008-06-03 Asm Japan K.K. Dual-chamber plasma processing apparatus
US20060021703A1 (en) 2004-07-29 2006-02-02 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US7192863B2 (en) 2004-07-30 2007-03-20 Texas Instruments Incorporated Method of eliminating etch ridges in a dual damascene process
US7806077B2 (en) 2004-07-30 2010-10-05 Amarante Technologies, Inc. Plasma nozzle array for providing uniform scalable microwave plasma generation
US20060021574A1 (en) 2004-08-02 2006-02-02 Veeco Instruments Inc. Multi-gas distribution injector for chemical vapor deposition reactors
US20060024954A1 (en) 2004-08-02 2006-02-02 Zhen-Cheng Wu Copper damascene barrier and capping layer
JP4718141B2 (ja) 2004-08-06 2011-07-06 東京エレクトロン株式会社 薄膜形成方法及び薄膜形成装置
US20060032833A1 (en) 2004-08-10 2006-02-16 Applied Materials, Inc. Encapsulation of post-etch halogenic residue
US7247570B2 (en) 2004-08-19 2007-07-24 Micron Technology, Inc. Silicon pillars for vertical transistors
US20060043066A1 (en) 2004-08-26 2006-03-02 Kamp Thomas A Processes for pre-tapering silicon or silicon-germanium prior to etching shallow trenches
US20060042752A1 (en) 2004-08-30 2006-03-02 Rueger Neal R Plasma processing apparatuses and methods
US7449416B2 (en) 2004-09-01 2008-11-11 Axcelis Technologies, Inc. Apparatus and plasma ashing process for increasing photoresist removal rate
US7329576B2 (en) 2004-09-02 2008-02-12 Micron Technology, Inc. Double-sided container capacitors using a sacrificial layer
US7115525B2 (en) 2004-09-02 2006-10-03 Micron Technology, Inc. Method for integrated circuit fabrication using pitch multiplication
JP2006108629A (ja) 2004-09-10 2006-04-20 Toshiba Corp 半導体装置の製造方法
US20060292846A1 (en) 2004-09-17 2006-12-28 Pinto Gustavo A Material management in substrate processing
US7138767B2 (en) 2004-09-30 2006-11-21 Tokyo Electron Limited Surface wave plasma processing system and method of using
JP4467453B2 (ja) 2004-09-30 2010-05-26 日本碍子株式会社 セラミックス部材及びその製造方法
US7268084B2 (en) 2004-09-30 2007-09-11 Tokyo Electron Limited Method for treating a substrate
US7544251B2 (en) 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
US7148155B1 (en) 2004-10-26 2006-12-12 Novellus Systems, Inc. Sequential deposition/anneal film densification method
US7053003B2 (en) 2004-10-27 2006-05-30 Lam Research Corporation Photoresist conditioning with hydrogen ramping
JP2006128485A (ja) 2004-10-29 2006-05-18 Asm Japan Kk 半導体処理装置
US20060093756A1 (en) 2004-11-03 2006-05-04 Nagarajan Rajagopalan High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric CVD films
US20060097397A1 (en) 2004-11-10 2006-05-11 Russell Stephen W Method for forming a dual layer, low resistance metallization during the formation of a semiconductor device
US7618515B2 (en) 2004-11-15 2009-11-17 Tokyo Electron Limited Focus ring, plasma etching apparatus and plasma etching method
EP1662546A1 (en) 2004-11-25 2006-05-31 The European Community, represented by the European Commission Inductively coupled plasma processing apparatus
US7722737B2 (en) 2004-11-29 2010-05-25 Applied Materials, Inc. Gas distribution system for improved transient phase deposition
US7052553B1 (en) 2004-12-01 2006-05-30 Lam Research Corporation Wet cleaning of electrostatic chucks
US7256121B2 (en) 2004-12-02 2007-08-14 Texas Instruments Incorporated Contact resistance reduction by new barrier stack process
US20060118240A1 (en) 2004-12-03 2006-06-08 Applied Science And Technology, Inc. Methods and apparatus for downstream dissociation of gases
FR2878913B1 (fr) 2004-12-03 2007-01-19 Cit Alcatel Controle des pressions partielles de gaz pour optimisation de procede
JP2006193822A (ja) 2004-12-16 2006-07-27 Sharp Corp めっき装置、めっき方法、半導体装置、及び半導体装置の製造方法
US20060130971A1 (en) 2004-12-21 2006-06-22 Applied Materials, Inc. Apparatus for generating plasma by RF power
JP2006179693A (ja) 2004-12-22 2006-07-06 Shin Etsu Chem Co Ltd ヒータ付き静電チャック
JP4191137B2 (ja) 2004-12-24 2008-12-03 東京エレクトロン株式会社 基板処理装置のクリーニング方法
US7365016B2 (en) 2004-12-27 2008-04-29 Dalsa Semiconductor Inc. Anhydrous HF release of process for MEMS devices
KR100653722B1 (ko) 2005-01-05 2006-12-05 삼성전자주식회사 저유전막을 갖는 반도체소자의 제조방법
US7465953B1 (en) 2005-01-07 2008-12-16 Board Of Regents, The University Of Texas System Positioning of nanoparticles and fabrication of single election devices
US7253123B2 (en) 2005-01-10 2007-08-07 Applied Materials, Inc. Method for producing gate stack sidewall spacers
KR100610019B1 (ko) 2005-01-11 2006-08-08 삼성전자주식회사 플라즈마 분배장치 및 이를 구비하는 건식 스트리핑 장치
US20060162661A1 (en) 2005-01-22 2006-07-27 Applied Materials, Inc. Mixing energized and non-energized gases for silicon nitride deposition
US7829243B2 (en) 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication
JP4601439B2 (ja) 2005-02-01 2010-12-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
GB0502149D0 (en) 2005-02-02 2005-03-09 Boc Group Inc Method of operating a pumping system
US7341943B2 (en) 2005-02-08 2008-03-11 Taiwan Semiconductor Manufacturing Co., Ltd. Post etch copper cleaning using dry plasma
US20060183270A1 (en) 2005-02-14 2006-08-17 Tessera, Inc. Tools and methods for forming conductive bumps on microelectronic elements
JP4475136B2 (ja) 2005-02-18 2010-06-09 東京エレクトロン株式会社 処理システム、前処理装置及び記憶媒体
US7344912B1 (en) 2005-03-01 2008-03-18 Spansion Llc Method for patterning electrically conducting poly(phenyl acetylene) and poly(diphenyl acetylene)
JP4506677B2 (ja) 2005-03-11 2010-07-21 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
JP2006261217A (ja) 2005-03-15 2006-09-28 Canon Anelva Corp 薄膜形成方法
JP4518986B2 (ja) 2005-03-17 2010-08-04 東京エレクトロン株式会社 大気搬送室、被処理体の処理後搬送方法、プログラム及び記憶媒体
US7514353B2 (en) 2005-03-18 2009-04-07 Applied Materials, Inc. Contact metallization scheme using a barrier layer over a silicide layer
TW200734482A (en) 2005-03-18 2007-09-16 Applied Materials Inc Electroless deposition process on a contact containing silicon or silicide
US7435454B2 (en) 2005-03-21 2008-10-14 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
US20060210723A1 (en) 2005-03-21 2006-09-21 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
KR100610465B1 (ko) 2005-03-25 2006-08-08 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US7442274B2 (en) 2005-03-28 2008-10-28 Tokyo Electron Limited Plasma etching method and apparatus therefor
US20060215347A1 (en) 2005-03-28 2006-09-28 Tokyo Electron Limited Processing apparatus and recording medium
KR100689826B1 (ko) 2005-03-29 2007-03-08 삼성전자주식회사 불소 함유된 화학적 식각 가스를 사용하는 고밀도 플라즈마화학기상증착 방법들 및 이를 채택하여 반도체 소자를제조하는 방법들
JP4860167B2 (ja) 2005-03-30 2012-01-25 東京エレクトロン株式会社 ロードロック装置，処理システム及び処理方法
US20060228889A1 (en) 2005-03-31 2006-10-12 Edelberg Erik A Methods of removing resist from substrates in resist stripping chambers
US7789962B2 (en) 2005-03-31 2010-09-07 Tokyo Electron Limited Device and method for controlling temperature of a mounting table, a program therefor, and a processing apparatus including same
US7288482B2 (en) 2005-05-04 2007-10-30 International Business Machines Corporation Silicon nitride etching methods
US7431856B2 (en) 2005-05-18 2008-10-07 National Research Council Of Canada Nano-tip fabrication by spatially controlled etching
KR100731164B1 (ko) 2005-05-19 2007-06-20 주식회사 피에조닉스 샤워헤드를 구비한 화학기상 증착 방법 및 장치
US20060266288A1 (en) 2005-05-27 2006-11-30 Applied Materials, Inc. High plasma utilization for remote plasma clean
JP4853857B2 (ja) 2005-06-15 2012-01-11 東京エレクトロン株式会社 基板の処理方法，コンピュータ読み取り可能な記録媒体及び基板処理装置
KR100676203B1 (ko) 2005-06-21 2007-01-30 삼성전자주식회사 반도체 설비용 정전 척의 냉각 장치
US20060286774A1 (en) 2005-06-21 2006-12-21 Applied Materials. Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
KR100915722B1 (ko) 2005-06-23 2009-09-04 도쿄엘렉트론가부시키가이샤 반도체 처리 장치용의 구성 부재 및 그 제조 방법, 및반도체 처리 장치
JP4554461B2 (ja) 2005-07-26 2010-09-29 株式会社日立ハイテクノロジーズ 半導体装置の製造方法
WO2007016013A2 (en) 2005-07-27 2007-02-08 Applied Materials, Inc. Unique passivation technique for a cvd blocker plate to prevent particle formation
US8366829B2 (en) 2005-08-05 2013-02-05 Advanced Micro-Fabrication Equipment, Inc. Asia Multi-station decoupled reactive ion etch chamber
US8709162B2 (en) 2005-08-16 2014-04-29 Applied Materials, Inc. Active cooling substrate support
US7833381B2 (en) 2005-08-18 2010-11-16 David Johnson Optical emission interferometry for PECVD using a gas injection hole
DE102006038885B4 (de) 2005-08-24 2013-10-10 Wonik Ips Co., Ltd. Verfahren zum Abscheiden einer Ge-Sb-Te-Dünnschicht
US20070056925A1 (en) 2005-09-09 2007-03-15 Lam Research Corporation Selective etch of films with high dielectric constant with H2 addition
WO2007035880A2 (en) 2005-09-21 2007-03-29 Applied Materials, Inc. Method and apparatus for forming device features in an integrated electroless deposition system
US20070066084A1 (en) 2005-09-21 2007-03-22 Cory Wajda Method and system for forming a layer with controllable spstial variation
US7718030B2 (en) 2005-09-23 2010-05-18 Tokyo Electron Limited Method and system for controlling radical distribution
JP4823628B2 (ja) 2005-09-26 2011-11-24 東京エレクトロン株式会社 基板処理方法および記録媒体
DE102005047081B4 (de) 2005-09-30 2019-01-31 Robert Bosch Gmbh Verfahren zum plasmalosen Ätzen von Silizium mit dem Ätzgas ClF3 oder XeF2
US8102123B2 (en) 2005-10-04 2012-01-24 Topanga Technologies, Inc. External resonator electrode-less plasma lamp and method of exciting with radio-frequency energy
US7438534B2 (en) 2005-10-07 2008-10-21 Edwards Vacuum, Inc. Wide range pressure control using turbo pump
KR100703014B1 (ko) 2005-10-26 2007-04-06 삼성전자주식회사 실리콘 산화물 식각액 및 이를 이용한 반도체 소자의 제조 방법
EP1780779A3 (en) 2005-10-28 2008-06-11 Interuniversitair Microelektronica Centrum ( Imec) A plasma for patterning advanced gate stacks
US20070099806A1 (en) 2005-10-28 2007-05-03 Stewart Michael P Composition and method for selectively removing native oxide from silicon-containing surfaces
US7884032B2 (en) 2005-10-28 2011-02-08 Applied Materials, Inc. Thin film deposition
US7696101B2 (en) 2005-11-01 2010-04-13 Micron Technology, Inc. Process for increasing feature density during the manufacture of a semiconductor device
US20070119371A1 (en) 2005-11-04 2007-05-31 Paul Ma Apparatus and process for plasma-enhanced atomic layer deposition
US20070107750A1 (en) 2005-11-14 2007-05-17 Sawin Herbert H Method of using NF3 for removing surface deposits from the interior of chemical vapor deposition chambers
JP4918778B2 (ja) 2005-11-16 2012-04-18 株式会社日立製作所 半導体集積回路装置の製造方法
US20070117396A1 (en) 2005-11-22 2007-05-24 Dingjun Wu Selective etching of titanium nitride with xenon difluoride
US7704887B2 (en) 2005-11-22 2010-04-27 Applied Materials, Inc. Remote plasma pre-clean with low hydrogen pressure
US7862683B2 (en) 2005-12-02 2011-01-04 Tokyo Electron Limited Chamber dry cleaning
KR100663668B1 (ko) 2005-12-07 2007-01-09 주식회사 뉴파워 프라즈마 복수의 기판을 병렬 배치 처리하기 위한 플라즈마 처리장치
US7662723B2 (en) 2005-12-13 2010-02-16 Lam Research Corporation Methods and apparatus for in-situ substrate processing
US7405160B2 (en) 2005-12-13 2008-07-29 Tokyo Electron Limited Method of making semiconductor device
JP4344949B2 (ja) 2005-12-27 2009-10-14 セイコーエプソン株式会社 シャワーヘッド、シャワーヘッドを含む成膜装置、ならびに強誘電体膜の製造方法
US7449538B2 (en) 2005-12-30 2008-11-11 Hynix Semiconductor Inc. Hard mask composition and method for manufacturing semiconductor device
US8088248B2 (en) 2006-01-11 2012-01-03 Lam Research Corporation Gas switching section including valves having different flow coefficients for gas distribution system
JP2007191792A (ja) 2006-01-19 2007-08-02 Atto Co Ltd ガス分離型シャワーヘッド
KR100712727B1 (ko) 2006-01-26 2007-05-04 주식회사 아토 절연체를 이용한 샤워헤드
US20070169703A1 (en) 2006-01-23 2007-07-26 Brent Elliot Advanced ceramic heater for substrate processing
US8173228B2 (en) 2006-01-27 2012-05-08 Applied Materials, Inc. Particle reduction on surfaces of chemical vapor deposition processing apparatus
US7494545B2 (en) 2006-02-03 2009-02-24 Applied Materials, Inc. Epitaxial deposition process and apparatus
KR100785164B1 (ko) 2006-02-04 2007-12-11 위순임 다중 출력 원격 플라즈마 발생기 및 이를 구비한 기판 처리시스템
KR100678696B1 (ko) 2006-02-08 2007-02-06 주식회사 뉴파워 프라즈마 환형 플라즈마를 형성하기 위한 페라이트 코어 조립체를구비한 자기 강화된 플라즈마 소오스
KR100752622B1 (ko) 2006-02-17 2007-08-30 한양대학교 산학협력단 원거리 플라즈마 발생장치
CN101378850A (zh) 2006-02-21 2009-03-04 应用材料股份有限公司 加强用于介电膜层的远程等离子体源清洁
US20070207275A1 (en) 2006-02-21 2007-09-06 Applied Materials, Inc. Enhancement of remote plasma source clean for dielectric films
US7713430B2 (en) 2006-02-23 2010-05-11 Micron Technology, Inc. Using positive DC offset of bias RF to neutralize charge build-up of etch features
US7520969B2 (en) 2006-03-07 2009-04-21 Applied Materials, Inc. Notched deposition ring
CA2644356A1 (en) 2006-03-16 2007-09-27 Novartis Ag Heterocyclic organic compounds for the treatment of in particular melanoma
US7977245B2 (en) 2006-03-22 2011-07-12 Applied Materials, Inc. Methods for etching a dielectric barrier layer with high selectivity
US7381651B2 (en) 2006-03-22 2008-06-03 Axcelis Technologies, Inc. Processes for monitoring the levels of oxygen and/or nitrogen species in a substantially oxygen and nitrogen-free plasma ashing process
US7628574B2 (en) 2006-03-28 2009-12-08 Arcus Technology, Inc. Apparatus and method for processing substrates using one or more vacuum transfer chamber units
US8343280B2 (en) 2006-03-28 2013-01-01 Tokyo Electron Limited Multi-zone substrate temperature control system and method of operating
US7743731B2 (en) 2006-03-30 2010-06-29 Tokyo Electron Limited Reduced contaminant gas injection system and method of using
US7906032B2 (en) 2006-03-31 2011-03-15 Tokyo Electron Limited Method for conditioning a process chamber
US7780865B2 (en) 2006-03-31 2010-08-24 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
JP5042517B2 (ja) 2006-04-10 2012-10-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN100539080C (zh) 2006-04-12 2009-09-09 中芯国际集成电路制造(上海)有限公司 通过自对准形成多晶硅浮栅结构的方法
US20070243714A1 (en) 2006-04-18 2007-10-18 Applied Materials, Inc. Method of controlling silicon-containing polymer build up during etching by using a periodic cleaning step
US7488685B2 (en) 2006-04-25 2009-02-10 Micron Technology, Inc. Process for improving critical dimension uniformity of integrated circuit arrays
US8226769B2 (en) 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
US20070254169A1 (en) 2006-04-28 2007-11-01 Kamins Theodore I Structures including organic self-assembled monolayers and methods of making the structures
US7297564B1 (en) 2006-05-02 2007-11-20 Sharp Laboratories Of America, Inc. Fabrication of vertical sidewalls on (110) silicon substrates for use in Si/SiGe photodetectors
US7601607B2 (en) 2006-05-15 2009-10-13 Chartered Semiconductor Manufacturing, Ltd. Protruded contact and insertion of inter-layer-dielectric material to match damascene hardmask to improve undercut for low-k interconnects
JP5578389B2 (ja) 2006-05-16 2014-08-27 Ｎｌｔテクノロジー株式会社 積層膜パターン形成方法及びゲート電極形成方法
US20070266946A1 (en) 2006-05-22 2007-11-22 Byung-Chul Choi Semiconductor device manufacturing apparatus and method of using the same
JP5119609B2 (ja) 2006-05-25 2013-01-16 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体、並びに半導体装置
US20070277734A1 (en) 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill
US7825038B2 (en) 2006-05-30 2010-11-02 Applied Materials, Inc. Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
US7790634B2 (en) 2006-05-30 2010-09-07 Applied Materials, Inc Method for depositing and curing low-k films for gapfill and conformal film applications
US20070281106A1 (en) 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill
US7665951B2 (en) 2006-06-02 2010-02-23 Applied Materials, Inc. Multiple slot load lock chamber and method of operation
US7777152B2 (en) 2006-06-13 2010-08-17 Applied Materials, Inc. High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck
JP5069427B2 (ja) 2006-06-13 2012-11-07 北陸成型工業株式会社 シャワープレート、並びにそれを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法
US7932181B2 (en) 2006-06-20 2011-04-26 Lam Research Corporation Edge gas injection for critical dimension uniformity improvement
US20070296967A1 (en) 2006-06-27 2007-12-27 Bhupendra Kumra Gupta Analysis of component for presence, composition and/or thickness of coating
US8114781B2 (en) 2006-06-29 2012-02-14 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
US7416989B1 (en) 2006-06-30 2008-08-26 Novellus Systems, Inc. Adsorption based material removal process
US7618889B2 (en) 2006-07-18 2009-11-17 Applied Materials, Inc. Dual damascene fabrication with low k materials
US9275887B2 (en) 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
US20080029032A1 (en) 2006-08-01 2008-02-07 Sun Jennifer Y Substrate support with protective layer for plasma resistance
GB0615343D0 (en) 2006-08-02 2006-09-13 Point 35 Microstructures Ltd Improved etch process
GB0616131D0 (en) 2006-08-14 2006-09-20 Oxford Instr Plasma Technology Surface processing apparatus
US20080045030A1 (en) 2006-08-15 2008-02-21 Shigeru Tahara Substrate processing method, substrate processing system and storage medium
US20080124937A1 (en) 2006-08-16 2008-05-29 Songlin Xu Selective etching method and apparatus
KR100761757B1 (ko) 2006-08-17 2007-09-28 삼성전자주식회사 막 형성 방법
KR100818708B1 (ko) 2006-08-18 2008-04-01 주식회사 하이닉스반도체 표면 세정을 포함하는 반도체소자 제조방법
US8110787B1 (en) 2006-08-23 2012-02-07 ON Semiconductor Trading, Ltd Image sensor with a reflective waveguide
US7575007B2 (en) 2006-08-23 2009-08-18 Applied Materials, Inc. Chamber recovery after opening barrier over copper
US20080063810A1 (en) 2006-08-23 2008-03-13 Applied Materials, Inc. In-situ process state monitoring of chamber
US20080063798A1 (en) * 2006-08-30 2008-03-13 Kher Shreyas S Precursors and hardware for cvd and ald
US7611980B2 (en) 2006-08-30 2009-11-03 Micron Technology, Inc. Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures
US7452766B2 (en) 2006-08-31 2008-11-18 Micron Technology, Inc. Finned memory cells and the fabrication thereof
KR100849929B1 (ko) 2006-09-16 2008-08-26 주식회사 피에조닉스 반응 기체의 분사 속도를 적극적으로 조절하는 샤워헤드를구비한 화학기상 증착 방법 및 장치
US7297894B1 (en) 2006-09-25 2007-11-20 Tokyo Electron Limited Method for multi-step temperature control of a substrate
US20080075668A1 (en) 2006-09-27 2008-03-27 Goldstein Alan H Security Device Using Reversibly Self-Assembling Systems
CN101153396B (zh) 2006-09-30 2010-06-09 中芯国际集成电路制造(上海)有限公司 等离子刻蚀方法
US7589950B2 (en) 2006-10-13 2009-09-15 Applied Materials, Inc. Detachable electrostatic chuck having sealing assembly
JP2008103645A (ja) 2006-10-20 2008-05-01 Toshiba Corp 半導体装置の製造方法
US20080099147A1 (en) 2006-10-26 2008-05-01 Nyi Oo Myo Temperature controlled multi-gas distribution assembly
US7655571B2 (en) 2006-10-26 2010-02-02 Applied Materials, Inc. Integrated method and apparatus for efficient removal of halogen residues from etched substrates
JP2008109043A (ja) 2006-10-27 2008-05-08 Oki Electric Ind Co Ltd 半導体装置の製造方法および半導体装置
US20080102640A1 (en) 2006-10-30 2008-05-01 Applied Materials, Inc. Etching oxide with high selectivity to titanium nitride
US8002946B2 (en) 2006-10-30 2011-08-23 Applied Materials, Inc. Mask etch plasma reactor with cathode providing a uniform distribution of etch rate
US7943005B2 (en) 2006-10-30 2011-05-17 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US7909961B2 (en) 2006-10-30 2011-03-22 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US7880232B2 (en) 2006-11-01 2011-02-01 Micron Technology, Inc. Processes and apparatus having a semiconductor fin
US7725974B2 (en) 2006-11-02 2010-06-01 Hughes Randall L Shoe and foot cleaning and disinfecting system
US20080178805A1 (en) 2006-12-05 2008-07-31 Applied Materials, Inc. Mid-chamber gas distribution plate, tuned plasma flow control grid and electrode
US7939422B2 (en) 2006-12-07 2011-05-10 Applied Materials, Inc. Methods of thin film process
CN101542693A (zh) 2006-12-11 2009-09-23 应用材料股份有限公司 干式光阻剥除方法及设备
US8702866B2 (en) 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
TWM318795U (en) 2006-12-18 2007-09-11 Lighthouse Technology Co Ltd Package structure
US20100059889A1 (en) 2006-12-20 2010-03-11 Nxp, B.V. Adhesion of diffusion barrier on copper-containing interconnect element
US7922863B2 (en) 2006-12-22 2011-04-12 Applied Materials, Inc. Apparatus for integrated gas and radiation delivery
JP5229711B2 (ja) 2006-12-25 2013-07-03 国立大学法人名古屋大学 パターン形成方法、および半導体装置の製造方法
US20080156631A1 (en) 2006-12-27 2008-07-03 Novellus Systems, Inc. Methods of Producing Plasma in a Container
JP2008163430A (ja) 2006-12-28 2008-07-17 Jtekt Corp 高耐食性部材およびその製造方法
US20080157225A1 (en) 2006-12-29 2008-07-03 Suman Datta SRAM and logic transistors with variable height multi-gate transistor architecture
KR20080063988A (ko) 2007-01-03 2008-07-08 삼성전자주식회사 중성빔을 이용한 식각장치
US8097105B2 (en) 2007-01-11 2012-01-17 Lam Research Corporation Extending lifetime of yttrium oxide as a plasma chamber material
JP5168907B2 (ja) 2007-01-15 2013-03-27 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
JP4421618B2 (ja) 2007-01-17 2010-02-24 東京エレクトロン株式会社 フィン型電界効果トランジスタの製造方法
US7728364B2 (en) 2007-01-19 2010-06-01 International Business Machines Corporation Enhanced mobility CMOS transistors with a V-shaped channel with self-alignment to shallow trench isolation
JP4299863B2 (ja) 2007-01-22 2009-07-22 エルピーダメモリ株式会社 半導体装置の製造方法
US8444926B2 (en) 2007-01-30 2013-05-21 Applied Materials, Inc. Processing chamber with heated chamber liner
JP5048352B2 (ja) 2007-01-31 2012-10-17 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR100878015B1 (ko) 2007-01-31 2009-01-13 삼성전자주식회사 산화물 제거 방법 및 이를 이용한 트렌치 매립 방법
KR100843236B1 (ko) 2007-02-06 2008-07-03 삼성전자주식회사 더블 패터닝 공정을 이용하는 반도체 소자의 미세 패턴형성 방법
JP2008205219A (ja) 2007-02-20 2008-09-04 Masato Toshima シャワーヘッドおよびこれを用いたｃｖｄ装置
US20080202892A1 (en) 2007-02-27 2008-08-28 Smith John M Stacked process chambers for substrate vacuum processing tool
CN100577866C (zh) 2007-02-27 2010-01-06 中微半导体设备(上海)有限公司 应用于等离子体反应室中的气体喷头组件、其制造方法及其翻新再利用的方法
US20080216901A1 (en) 2007-03-06 2008-09-11 Mks Instruments, Inc. Pressure control for vacuum processing system
US20080216958A1 (en) 2007-03-07 2008-09-11 Novellus Systems, Inc. Plasma Reaction Apparatus Having Pre-Seasoned Showerheads and Methods for Manufacturing the Same
US7977249B1 (en) 2007-03-07 2011-07-12 Novellus Systems, Inc. Methods for removing silicon nitride and other materials during fabrication of contacts
WO2008112673A2 (en) 2007-03-12 2008-09-18 Tokyo Electron Limited Dynamic temperature backside gas control for improved within-substrate processing uniformity
JP4833890B2 (ja) 2007-03-12 2011-12-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ分布補正方法
KR100853485B1 (ko) 2007-03-19 2008-08-21 주식회사 하이닉스반도체 리세스 게이트를 갖는 반도체 소자의 제조 방법
US20080233709A1 (en) 2007-03-22 2008-09-25 Infineon Technologies North America Corp. Method for removing material from a semiconductor
US7815814B2 (en) 2007-03-23 2010-10-19 Tokyo Electron Limited Method and system for dry etching a metal nitride
WO2008123060A1 (ja) 2007-03-28 2008-10-16 Canon Anelva Corporation 真空処理装置
JP4988402B2 (ja) 2007-03-30 2012-08-01 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8235001B2 (en) 2007-04-02 2012-08-07 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device
JP5179476B2 (ja) 2007-04-17 2013-04-10 株式会社アルバック 成膜装置
JP5282419B2 (ja) 2007-04-18 2013-09-04 ソニー株式会社 半導体装置及びその製造方法
JP5135879B2 (ja) 2007-05-21 2013-02-06 富士電機株式会社 炭化珪素半導体装置の製造方法
KR100777043B1 (ko) 2007-05-22 2007-11-16 주식회사 테스 비정질 탄소막 형성 방법 및 이를 이용한 반도체 소자의제조 방법
US8084105B2 (en) 2007-05-23 2011-12-27 Applied Materials, Inc. Method of depositing boron nitride and boron nitride-derived materials
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US7807578B2 (en) 2007-06-01 2010-10-05 Applied Materials, Inc. Frequency doubling using spacer mask
JP2008305871A (ja) 2007-06-05 2008-12-18 Spansion Llc 半導体装置およびその製造方法
KR20080111627A (ko) 2007-06-19 2008-12-24 삼성전자주식회사 플라즈마 공정장치 및 그 방법
US20090004873A1 (en) 2007-06-26 2009-01-01 Intevac, Inc. Hybrid etch chamber with decoupled plasma controls
US7585716B2 (en) 2007-06-27 2009-09-08 International Business Machines Corporation High-k/metal gate MOSFET with reduced parasitic capacitance
JP5008478B2 (ja) 2007-06-27 2012-08-22 東京エレクトロン株式会社 基板処理装置およびシャワーヘッド
TWI479559B (zh) 2007-06-28 2015-04-01 Quantum Global Tech Llc 以選擇性噴灑蝕刻來清潔腔室部件的方法和設備
KR100877107B1 (ko) 2007-06-28 2009-01-07 주식회사 하이닉스반도체 반도체 소자의 층간절연막 형성방법
JP4438008B2 (ja) 2007-06-29 2010-03-24 東京エレクトロン株式会社 基板処理装置
US8021514B2 (en) 2007-07-11 2011-09-20 Applied Materials, Inc. Remote plasma source for pre-treatment of substrates prior to deposition
US8197636B2 (en) 2007-07-12 2012-06-12 Applied Materials, Inc. Systems for plasma enhanced chemical vapor deposition and bevel edge etching
JP5660753B2 (ja) 2007-07-13 2015-01-28 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマエッチング用高温カソード
WO2009010909A1 (en) 2007-07-19 2009-01-22 Koninklijke Philips Electronics N.V. Method, system and device for transmitting lighting device data
DE102007033685A1 (de) 2007-07-19 2009-01-22 Robert Bosch Gmbh Verfahren zum Ätzen einer Schicht auf einem Silizium-Halbleitersubstrat
JP5077659B2 (ja) 2007-07-20 2012-11-21 ニチアス株式会社 触媒コンバーター及び触媒コンバーター用保持材
US8008166B2 (en) 2007-07-26 2011-08-30 Applied Materials, Inc. Method and apparatus for cleaning a substrate surface
EP2042516A1 (en) 2007-09-27 2009-04-01 Protaffin Biotechnologie AG Glycosaminoglycan-antagonising MCP-1 mutants and methods of using same
US8108981B2 (en) 2007-07-31 2012-02-07 Applied Materials, Inc. Method of making an electrostatic chuck with reduced plasma penetration and arcing
US8367227B2 (en) 2007-08-02 2013-02-05 Applied Materials, Inc. Plasma-resistant ceramics with controlled electrical resistivity
JP5251033B2 (ja) 2007-08-14 2013-07-31 ソニー株式会社 半導体装置の製造方法
JP4160104B1 (ja) 2007-08-16 2008-10-01 株式会社アルバック アッシング装置
WO2009025392A2 (en) 2007-08-21 2009-02-26 Panasonic Corporation Plasma processing device and method of monitoring plasma discharge state in plasma processing device
US8202393B2 (en) 2007-08-29 2012-06-19 Lam Research Corporation Alternate gas delivery and evacuation system for plasma processing apparatuses
US8765589B2 (en) 2007-08-31 2014-07-01 Tokyo Electron Limited Semiconductor device manufacturing method
TWI459851B (zh) 2007-09-10 2014-11-01 Ngk Insulators Ltd heating equipment
JP5148955B2 (ja) 2007-09-11 2013-02-20 東京エレクトロン株式会社 基板載置機構及び基板処理装置
JP5347294B2 (ja) 2007-09-12 2013-11-20 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP5169097B2 (ja) 2007-09-14 2013-03-27 住友電気工業株式会社 半導体装置の製造装置および製造方法
US20120122319A1 (en) 2007-09-19 2012-05-17 Hironobu Shimizu Coating method for coating reaction tube prior to film forming process
US7781332B2 (en) 2007-09-19 2010-08-24 International Business Machines Corporation Methods to mitigate plasma damage in organosilicate dielectrics using a protective sidewall spacer
JP5194125B2 (ja) 2007-09-25 2013-05-08 ラム リサーチ コーポレーション シャワーヘッド電極アセンブリ用の温度制御モジュール、シャワーヘッド電極アセンブリ及びシャワーヘッド電極アセンブリの上部電極の温度を制御する方法
KR101070292B1 (ko) 2007-09-28 2011-10-06 주식회사 하이닉스반도체 반도체장치의 리세스게이트 제조 방법
US20090084317A1 (en) 2007-09-28 2009-04-02 Applied Materials, Inc. Atomic layer deposition chamber and components
US8298931B2 (en) 2007-09-28 2012-10-30 Sandisk 3D Llc Dual damascene with amorphous carbon for 3D deep via/trench application
JP2009088229A (ja) 2007-09-28 2009-04-23 Tokyo Electron Ltd 成膜装置、成膜方法、記憶媒体及びガス供給装置
JP2011500961A (ja) 2007-10-11 2011-01-06 バレンス プロセス イクウィップメント，インコーポレイテッド 化学気相成長反応器
US7838390B2 (en) 2007-10-12 2010-11-23 Samsung Electronics Co., Ltd. Methods of forming integrated circuit devices having ion-cured electrically insulating layers therein
US20090095222A1 (en) 2007-10-16 2009-04-16 Alexander Tam Multi-gas spiral channel showerhead
US20090095221A1 (en) 2007-10-16 2009-04-16 Alexander Tam Multi-gas concentric injection showerhead
US7976631B2 (en) 2007-10-16 2011-07-12 Applied Materials, Inc. Multi-gas straight channel showerhead
US8252696B2 (en) 2007-10-22 2012-08-28 Applied Materials, Inc. Selective etching of silicon nitride
US7871926B2 (en) 2007-10-22 2011-01-18 Applied Materials, Inc. Methods and systems for forming at least one dielectric layer
KR101449548B1 (ko) 2007-10-26 2014-10-13 참엔지니어링(주) 배플, 기판 지지장치 및 이를 구비하는 플라즈마 처리장치
KR101508026B1 (ko) 2007-10-31 2015-04-08 램 리써치 코포레이션 컴포넌트 바디와 액체 냉각제 사이의 열 전도도를 제어하기 위해 가스 압력을 이용하는 온도 제어 모듈
CN101889329B (zh) 2007-10-31 2012-07-04 朗姆研究公司 长寿命可消耗氮化硅-二氧化硅等离子处理部件
US20100243165A1 (en) 2007-11-01 2010-09-30 Pyung-Yong Um Apparatus for surface-treating wafer using high-frequency inductively-coupled plasma
JP5006938B2 (ja) 2007-11-02 2012-08-22 キヤノンアネルバ株式会社 表面処理装置およびその基板処理方法
US7964040B2 (en) 2007-11-08 2011-06-21 Applied Materials, Inc. Multi-port pumping system for substrate processing chambers
JP5150217B2 (ja) 2007-11-08 2013-02-20 東京エレクトロン株式会社 シャワープレート及び基板処理装置
CN104037065A (zh) 2007-11-08 2014-09-10 朗姆研究公司 使用氧化物垫片减小节距
US20090120364A1 (en) 2007-11-09 2009-05-14 Applied Materials, Inc. Gas mixing swirl insert assembly
JP5172617B2 (ja) 2007-11-12 2013-03-27 シャープ株式会社 気相成長装置及び気相成長方法
US7704849B2 (en) 2007-12-03 2010-04-27 Micron Technology, Inc. Methods of forming trench isolation in silicon of a semiconductor substrate by plasma
FR2924501B1 (fr) 2007-12-04 2010-02-05 Commissariat Energie Atomique Procede de reglage d'un circuit d'excitation et detection pour resonance magnetique nucleaire et circuit d'excitation et detection adapte a la mise en oeuvre d'un tel procede
AU2008333222A1 (en) 2007-12-04 2009-06-11 Parabel Ag Multilayer solar element
JP5142692B2 (ja) 2007-12-11 2013-02-13 株式会社東芝 不揮発性半導体記憶装置
US8187486B1 (en) 2007-12-13 2012-05-29 Novellus Systems, Inc. Modulating etch selectivity and etch rate of silicon nitride thin films
US8512509B2 (en) 2007-12-19 2013-08-20 Applied Materials, Inc. Plasma reactor gas distribution plate with radially distributed path splitting manifold
US20090159213A1 (en) 2007-12-19 2009-06-25 Applied Materials, Inc. Plasma reactor gas distribution plate having a path splitting manifold immersed within a showerhead
US8129029B2 (en) 2007-12-21 2012-03-06 Applied Materials, Inc. Erosion-resistant plasma chamber components comprising a metal base structure with an overlying thermal oxidation coating
WO2009086013A2 (en) 2007-12-21 2009-07-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
US7989329B2 (en) 2007-12-21 2011-08-02 Applied Materials, Inc. Removal of surface dopants from a substrate
JP4974873B2 (ja) 2007-12-26 2012-07-11 新光電気工業株式会社 静電チャック及び基板温調固定装置
US20090170331A1 (en) 2007-12-27 2009-07-02 International Business Machines Corporation Method of forming a bottle-shaped trench by ion implantation
TWI427697B (zh) 2007-12-28 2014-02-21 Tokyo Electron Ltd 金屬膜及金屬氧化膜之蝕刻方法與半導體裝置之製造方法
US7910477B2 (en) 2007-12-28 2011-03-22 Texas Instruments Incorporated Etch residue reduction by ash methodology
JP2009170509A (ja) 2008-01-11 2009-07-30 Hitachi High-Technologies Corp ヒータ内蔵静電チャックを備えたプラズマ処理装置
US8018023B2 (en) 2008-01-14 2011-09-13 Kabushiki Kaisha Toshiba Trench sidewall protection by a carbon-rich layer in a semiconductor device
US7998864B2 (en) 2008-01-29 2011-08-16 International Business Machines Corporation Noble metal cap for interconnect structures
TW200933812A (en) 2008-01-30 2009-08-01 Promos Technologies Inc Process for forming trench isolation structure and semiconductor device produced thereby
US20090191711A1 (en) 2008-01-30 2009-07-30 Ying Rui Hardmask open process with enhanced cd space shrink and reduction
CN101911253B (zh) 2008-01-31 2012-08-22 应用材料公司 闭环mocvd沉积控制
US20090194810A1 (en) 2008-01-31 2009-08-06 Masahiro Kiyotoshi Semiconductor device using element isolation region of trench isolation structure and manufacturing method thereof
JP5224837B2 (ja) 2008-02-01 2013-07-03 株式会社東芝 基板のプラズマ処理装置及びプラズマ処理方法
JP5250279B2 (ja) 2008-02-23 2013-07-31 東京エレクトロン株式会社 プローブ装置
US20090214825A1 (en) 2008-02-26 2009-08-27 Applied Materials, Inc. Ceramic coating comprising yttrium which is resistant to a reducing plasma
KR101259484B1 (ko) 2008-02-26 2013-05-06 쿄세라 코포레이션 웨이퍼 지지 부재와 그 제조 방법, 및 이것을 사용한 정전 척
US8066895B2 (en) 2008-02-28 2011-11-29 Applied Materials, Inc. Method to control uniformity using tri-zone showerhead
US8336891B2 (en) 2008-03-11 2012-12-25 Ngk Insulators, Ltd. Electrostatic chuck
US7906818B2 (en) 2008-03-13 2011-03-15 Micron Technology, Inc. Memory array with a pair of memory-cell strings to a single conductive pillar
JP5188849B2 (ja) 2008-03-14 2013-04-24 Ｓｐｐテクノロジーズ株式会社 プラズマ処理装置
US9520275B2 (en) 2008-03-21 2016-12-13 Tokyo Electron Limited Mono-energetic neutral beam activated chemical processing system and method of using
US20110011341A1 (en) 2008-03-24 2011-01-20 Tokyo Electron Limited Shower plate and plasma processing device using the same
JP5352103B2 (ja) 2008-03-27 2013-11-27 東京エレクトロン株式会社 熱処理装置および処理システム
DE102008016425B4 (de) 2008-03-31 2015-11-19 Advanced Micro Devices, Inc. Verfahren zur Strukturierung einer Metallisierungsschicht durch Verringerung der durch Lackentfernung hervorgerufenen Schäden des dielektrischen Materials
JP5026326B2 (ja) 2008-04-04 2012-09-12 株式会社日立ハイテクノロジーズ エッチング処理状態の判定方法、システム
US20090258162A1 (en) 2008-04-12 2009-10-15 Applied Materials, Inc. Plasma processing apparatus and method
JP2009266952A (ja) 2008-04-23 2009-11-12 Seiko Epson Corp デバイスの製造方法及び製造装置
US7977246B2 (en) 2008-04-25 2011-07-12 Applied Materials, Inc. Thermal annealing method for preventing defects in doped silicon oxide surfaces during exposure to atmosphere
US8252194B2 (en) 2008-05-02 2012-08-28 Micron Technology, Inc. Methods of removing silicon oxide
US8398777B2 (en) 2008-05-02 2013-03-19 Applied Materials, Inc. System and method for pedestal adjustment
US20090275206A1 (en) 2008-05-05 2009-11-05 Applied Materials, Inc. Plasma process employing multiple zone gas distribution for improved uniformity of critical dimension bias
US20090274590A1 (en) 2008-05-05 2009-11-05 Applied Materials, Inc. Plasma reactor electrostatic chuck having a coaxial rf feed and multizone ac heater power transmission through the coaxial feed
US20090277587A1 (en) 2008-05-09 2009-11-12 Applied Materials, Inc. Flowable dielectric equipment and processes
US8357435B2 (en) 2008-05-09 2013-01-22 Applied Materials, Inc. Flowable dielectric equipment and processes
US20090277874A1 (en) 2008-05-09 2009-11-12 Applied Materials, Inc. Method and apparatus for removing polymer from a substrate
US8277670B2 (en) 2008-05-13 2012-10-02 Lam Research Corporation Plasma process with photoresist mask pretreatment
KR100999182B1 (ko) 2008-05-20 2010-12-08 주식회사 뉴파워 프라즈마 내장 변압기를 갖는 플라즈마 반응기
KR100998011B1 (ko) 2008-05-22 2010-12-03 삼성엘이디 주식회사 화학기상 증착장치
KR101006848B1 (ko) 2008-05-28 2011-01-14 주식회사 코미코 기판 지지 장치 및 이를 포함하는 기판 처리 장치
DE102008026134A1 (de) 2008-05-30 2009-12-17 Advanced Micro Devices, Inc., Sunnyvale Mikrostrukturbauelement mit einer Metallisierungsstruktur mit selbstjustierten Luftspalten zwischen dichtliegenden Metallleitungen
US7754601B2 (en) 2008-06-03 2010-07-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor interconnect air gap formation process
US20090302005A1 (en) 2008-06-04 2009-12-10 General Electric Company Processes for texturing a surface prior to electroless plating
KR20090128913A (ko) 2008-06-11 2009-12-16 성균관대학교산학협력단 태양전지용 실리콘 기판의 텍스처링 장치 및 그 방법
JP2010003826A (ja) 2008-06-19 2010-01-07 Toshiba Corp 半導体装置の製造方法
US7699935B2 (en) 2008-06-19 2010-04-20 Applied Materials, Inc. Method and system for supplying a cleaning gas into a process chamber
US8607731B2 (en) 2008-06-23 2013-12-17 Applied Materials, Inc. Cathode with inner and outer electrodes at different heights
JP5222040B2 (ja) 2008-06-25 2013-06-26 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
CN101932750B (zh) 2008-06-27 2014-05-07 三菱重工业株式会社 真空处理装置及真空处理装置的运转方法
JP5211332B2 (ja) 2008-07-01 2013-06-12 株式会社ユーテック プラズマｃｖｄ装置、ｄｌｃ膜及び薄膜の製造方法
US8291857B2 (en) 2008-07-03 2012-10-23 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition
US8206506B2 (en) 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
US8161906B2 (en) 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
KR20110036933A (ko) 2008-07-11 2011-04-12 어플라이드 머티어리얼스, 인코포레이티드 Ｃｖｄ 적용을 위한 챔버 구성요소
US8419960B2 (en) 2008-07-11 2013-04-16 Tokyo Electron Limited Plasma processing apparatus and method
WO2010008021A1 (ja) 2008-07-15 2010-01-21 キヤノンアネルバ株式会社 プラズマ処理方法及びプラズマ処理装置
US8336188B2 (en) 2008-07-17 2012-12-25 Formfactor, Inc. Thin wafer chuck
US20100018648A1 (en) 2008-07-23 2010-01-28 Applied Marterials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
JP2011253832A (ja) 2008-07-24 2011-12-15 Canon Anelva Corp レジストトリミング方法及びトリミング装置
KR20100013980A (ko) 2008-08-01 2010-02-10 주식회사 하이닉스반도체 반도체 소자의 소자 분리막 형성 방법
US20100025370A1 (en) 2008-08-04 2010-02-04 Applied Materials, Inc. Reactive gas distributor, reactive gas treatment system, and reactive gas treatment method
WO2010019430A2 (en) 2008-08-12 2010-02-18 Applied Materials, Inc. Electrostatic chuck assembly
EP2324687B1 (en) 2008-08-20 2016-01-27 Vision Dynamics Holding B.V. Device for generating a plasma discharge for patterning the surface of a substrate
US7882808B2 (en) 2008-08-20 2011-02-08 Crazy K Poultry + Livestock, LLC Protective hen apron
US8268729B2 (en) 2008-08-21 2012-09-18 International Business Machines Corporation Smooth and vertical semiconductor fin structure
JP2010047818A (ja) 2008-08-25 2010-03-04 Toshiba Corp 半導体製造装置および半導体製造方法
KR100997502B1 (ko) 2008-08-26 2010-11-30 금호석유화학 주식회사 개환된 프탈릭 언하이드라이드를 포함하는 유기 반사 방지막 조성물과 이의 제조방법
KR101025741B1 (ko) 2008-09-02 2011-04-04 주식회사 하이닉스반도체 수직 채널 트랜지스터의 활성필라 제조방법
US8871645B2 (en) 2008-09-11 2014-10-28 Applied Materials, Inc. Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof
US8168268B2 (en) 2008-12-12 2012-05-01 Ovishinsky Innovation, LLC Thin film deposition via a spatially-coordinated and time-synchronized process
US7709396B2 (en) 2008-09-19 2010-05-04 Applied Materials, Inc. Integral patterning of large features along with array using spacer mask patterning process flow
JP5295833B2 (ja) 2008-09-24 2013-09-18 株式会社東芝 基板処理装置および基板処理方法
US20100081285A1 (en) 2008-09-30 2010-04-01 Tokyo Electron Limited Apparatus and Method for Improving Photoresist Properties
US7968441B2 (en) 2008-10-08 2011-06-28 Applied Materials, Inc. Dopant activation anneal to achieve less dopant diffusion (better USJ profile) and higher activation percentage
US7928003B2 (en) 2008-10-10 2011-04-19 Applied Materials, Inc. Air gap interconnects using carbon-based films
US7910491B2 (en) 2008-10-16 2011-03-22 Applied Materials, Inc. Gapfill improvement with low etch rate dielectric liners
US20100099263A1 (en) 2008-10-20 2010-04-22 Applied Materials, Inc. Nf3/h2 remote plasma process with high etch selectivity of psg/bpsg over thermal oxide and low density surface defects
US8207470B2 (en) 2008-10-20 2012-06-26 Industry-University Cooperation Foundation Hanyang University Apparatus for generating remote plasma
WO2010048076A2 (en) 2008-10-21 2010-04-29 Applied Materials, Inc. Plasma source for chamber cleaning and process
US8173547B2 (en) 2008-10-23 2012-05-08 Lam Research Corporation Silicon etch with passivation using plasma enhanced oxidation
US20100101727A1 (en) 2008-10-27 2010-04-29 Helin Ji Capacitively coupled remote plasma source with large operating pressure range
JP5396065B2 (ja) 2008-10-28 2014-01-22 株式会社日立製作所 半導体装置の製造方法
US8206829B2 (en) 2008-11-10 2012-06-26 Applied Materials, Inc. Plasma resistant coatings for plasma chamber components
US20100116788A1 (en) 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support
US8043933B2 (en) 2008-11-24 2011-10-25 Applied Materials, Inc. Integration sequences with top surface profile modification
JP5358165B2 (ja) 2008-11-26 2013-12-04 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
US20100144140A1 (en) 2008-12-10 2010-06-10 Novellus Systems, Inc. Methods for depositing tungsten films having low resistivity for gapfill applications
US20100147219A1 (en) 2008-12-12 2010-06-17 Jui Hai Hsieh High temperature and high voltage electrode assembly design
US8540844B2 (en) 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
US8869741B2 (en) 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
US8058179B1 (en) 2008-12-23 2011-11-15 Novellus Systems, Inc. Atomic layer removal process with higher etch amount
JP2010154699A (ja) 2008-12-26 2010-07-08 Hitachi Ltd 磁束可変型回転電機
US20100183825A1 (en) 2008-12-31 2010-07-22 Cambridge Nanotech Inc. Plasma atomic layer deposition system and method
KR101587601B1 (ko) 2009-01-14 2016-01-25 삼성전자주식회사 비휘발성 메모리 장치의 제조 방법
US20100187694A1 (en) 2009-01-28 2010-07-29 Chen-Hua Yu Through-Silicon Via Sidewall Isolation Structure
US7964517B2 (en) 2009-01-29 2011-06-21 Texas Instruments Incorporated Use of a biased precoat for reduced first wafer defects in high-density plasma process
KR20100087915A (ko) 2009-01-29 2010-08-06 삼성전자주식회사 실린더형 스토리지 노드를 포함하는 반도체 메모리 소자 및그 제조 방법
KR101795658B1 (ko) 2009-01-31 2017-11-08 어플라이드 머티어리얼스, 인코포레이티드 에칭을 위한 방법 및 장치
KR101527195B1 (ko) 2009-02-02 2015-06-10 삼성전자주식회사 수직 구조의 비휘발성 메모리 소자
JP5210191B2 (ja) 2009-02-03 2013-06-12 東京エレクトロン株式会社 窒化珪素膜のドライエッチング方法
JP2010180458A (ja) 2009-02-06 2010-08-19 Kit:Kk アルミニウム表面の酸化層形成方法及び半導体装置の製造方法
CN102365906B (zh) 2009-02-13 2016-02-03 应用材料公司 用于等离子体腔室电极的rf总线与rf回流总线
KR101566922B1 (ko) 2009-02-16 2015-11-09 삼성전자주식회사 저스트 드라이 에칭과 케미컬 드라이 에칭을 조합한 반도체소자의 금속 실리사이드막 형성 방법
US8148749B2 (en) 2009-02-19 2012-04-03 Fairchild Semiconductor Corporation Trench-shielded semiconductor device
US20110048325A1 (en) 2009-03-03 2011-03-03 Sun Hong Choi Gas Distribution Apparatus and Substrate Processing Apparatus Having the Same
US20100224322A1 (en) 2009-03-03 2010-09-09 Applied Materials, Inc. Endpoint detection for a reactor chamber using a remote plasma chamber
US9378930B2 (en) 2009-03-05 2016-06-28 Applied Materials, Inc. Inductively coupled plasma reactor having RF phase control and methods of use thereof
EP2409313A1 (de) 2009-03-17 2012-01-25 Roth & Rau AG Substratbearbeitungsanlage und substratbearbeitungsverfahren
KR101539699B1 (ko) 2009-03-19 2015-07-27 삼성전자주식회사 3차원 구조의 비휘발성 메모리 소자 및 그 제조방법
US8312839B2 (en) 2009-03-24 2012-11-20 Applied Materials, Inc. Mixing frequency at multiple feeding points
US8382999B2 (en) 2009-03-26 2013-02-26 Applied Materials, Inc. Pulsed plasma high aspect ratio dielectric process
JP5657262B2 (ja) 2009-03-27 2015-01-21 東京エレクトロン株式会社 プラズマ処理装置
JP5501807B2 (ja) 2009-03-31 2014-05-28 東京エレクトロン株式会社 処理装置
KR101534357B1 (ko) 2009-03-31 2015-07-06 도쿄엘렉트론가부시키가이샤 기판 지지 장치 및 기판 지지 방법
US8026179B2 (en) 2009-04-09 2011-09-27 Macronix International Co., Ltd. Patterning method and integrated circuit structure
US8272346B2 (en) 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
US20100263588A1 (en) 2009-04-15 2010-10-21 Gan Zhiyin Methods and apparatus for epitaxial growth of semiconductor materials
US8193075B2 (en) 2009-04-20 2012-06-05 Applied Materials, Inc. Remote hydrogen plasma with ion filter for terminating silicon dangling bonds
WO2010123707A2 (en) 2009-04-20 2010-10-28 Applied Materials, Inc. Enhanced scavenging of residual fluorine radicals using silicon coating on process chamber walls
US9431237B2 (en) 2009-04-20 2016-08-30 Applied Materials, Inc. Post treatment methods for oxide layers on semiconductor devices
SG174993A1 (en) 2009-04-21 2011-11-28 Applied Materials Inc Cvd apparatus for improved film thickness non-uniformity and particle performance
US8110889B2 (en) 2009-04-28 2012-02-07 Applied Materials, Inc. MOCVD single chamber split process for LED manufacturing
US8623141B2 (en) 2009-05-18 2014-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Piping system and control for semiconductor processing
KR101360876B1 (ko) 2009-06-03 2014-02-11 어플라이드 머티어리얼스, 인코포레이티드 식각을 위한 방법 및 장치
US8753447B2 (en) 2009-06-10 2014-06-17 Novellus Systems, Inc. Heat shield for heater in semiconductor processing apparatus
US8492292B2 (en) 2009-06-29 2013-07-23 Applied Materials, Inc. Methods of forming oxide layers on substrates
WO2011009002A2 (en) 2009-07-15 2011-01-20 Applied Materials, Inc. Flow control features of cvd chambers
US8124531B2 (en) 2009-08-04 2012-02-28 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US7935643B2 (en) 2009-08-06 2011-05-03 Applied Materials, Inc. Stress management for tensile films
US8404598B2 (en) 2009-08-07 2013-03-26 Applied Materials, Inc. Synchronized radio frequency pulsing for plasma etching
US7989365B2 (en) 2009-08-18 2011-08-02 Applied Materials, Inc. Remote plasma source seasoning
KR101095119B1 (ko) 2009-08-19 2011-12-16 삼성전기주식회사 다이 패키지 및 그 제조방법
US9299539B2 (en) 2009-08-21 2016-03-29 Lam Research Corporation Method and apparatus for measuring wafer bias potential
JP2013503414A (ja) 2009-08-26 2013-01-31 ビーコ・インスツルメンツ・インコーポレーテッド 磁気記録媒体上にパターンを製造するためのシステム
CN102414801A (zh) 2009-08-27 2012-04-11 应用材料公司 在原位腔室清洁后的处理腔室去污方法
US8211808B2 (en) 2009-08-31 2012-07-03 Applied Materials, Inc. Silicon-selective dry etch for carbon-containing films
WO2011027515A1 (ja) 2009-09-02 2011-03-10 積水化学工業株式会社 シリコン含有膜のエッチング方法
US20120171852A1 (en) 2009-09-04 2012-07-05 Applied Materials, Inc Remote hydrogen plasma source of silicon containing film deposition
US20110061812A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110061810A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110065276A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
JP5648349B2 (ja) 2009-09-17 2015-01-07 東京エレクトロン株式会社 成膜装置
US8216640B2 (en) 2009-09-25 2012-07-10 Hermes-Epitek Corporation Method of making showerhead for semiconductor processing apparatus
US8329587B2 (en) 2009-10-05 2012-12-11 Applied Materials, Inc. Post-planarization densification
US9449859B2 (en) 2009-10-09 2016-09-20 Applied Materials, Inc. Multi-gas centrally cooled showerhead design
TWI430714B (zh) 2009-10-15 2014-03-11 Orbotech Lt Solar Llc 電漿處理腔之噴撒頭組件及電漿處理腔之噴撒頭組件之氣體電離板之製備方法
EP2315028A1 (en) 2009-10-26 2011-04-27 Atlas Antibodies AB PODXL protein in colorectal cancer
KR101757922B1 (ko) 2009-10-27 2017-07-14 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
KR101928402B1 (ko) 2009-10-30 2018-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작방법
CN102598131B (zh) 2009-11-04 2016-04-13 应用材料公司 用于图案化的磁盘媒体应用的等离子体离子注入工艺
JP5257328B2 (ja) 2009-11-04 2013-08-07 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
US8455364B2 (en) 2009-11-06 2013-06-04 International Business Machines Corporation Sidewall image transfer using the lithographic stack as the mandrel
WO2011056281A1 (en) 2009-11-06 2011-05-12 Rambus Inc. Three-dimensional memory array stacking structure
US8771538B2 (en) 2009-11-18 2014-07-08 Applied Materials, Inc. Plasma source design
US8742665B2 (en) 2009-11-18 2014-06-03 Applied Materials, Inc. Plasma source design
KR20110054840A (ko) 2009-11-18 2011-05-25 주식회사 아토 샤워헤드 어셈블리 및 이를 구비한 박막증착장치
WO2011066508A2 (en) 2009-11-30 2011-06-03 Applied Materials, Inc. Chamber for processing hard disk drive substrates
US8604697B2 (en) 2009-12-09 2013-12-10 Jehara Corporation Apparatus for generating plasma
WO2011072143A2 (en) 2009-12-09 2011-06-16 Novellus Systems, Inc. Novel gap fill integration
US8202803B2 (en) 2009-12-11 2012-06-19 Tokyo Electron Limited Method to remove capping layer of insulation dielectric in interconnect structures
WO2011070945A1 (ja) 2009-12-11 2011-06-16 株式会社アルバック 薄膜製造装置、薄膜の製造方法、及び半導体装置の製造方法
US20110139748A1 (en) 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
US20110140229A1 (en) 2009-12-16 2011-06-16 Willy Rachmady Techniques for forming shallow trench isolation
US8274017B2 (en) 2009-12-18 2012-09-25 Applied Materials, Inc. Multifunctional heater/chiller pedestal for wide range wafer temperature control
US20110151677A1 (en) 2009-12-21 2011-06-23 Applied Materials, Inc. Wet oxidation process performed on a dielectric material formed from a flowable cvd process
US8501629B2 (en) 2009-12-23 2013-08-06 Applied Materials, Inc. Smooth SiConi etch for silicon-containing films
JP4927158B2 (ja) 2009-12-25 2012-05-09 東京エレクトロン株式会社 基板処理方法、その基板処理方法を実行させるためのプログラムを記録した記録媒体及び基板処理装置
US20110303146A1 (en) 2009-12-28 2011-12-15 Osamu Nishijima Plasma doping apparatus
US8329262B2 (en) 2010-01-05 2012-12-11 Applied Materials, Inc. Dielectric film formation using inert gas excitation
JP5710209B2 (ja) 2010-01-18 2015-04-30 東京エレクトロン株式会社 電磁波給電機構およびマイクロ波導入機構
JP5166458B2 (ja) 2010-01-22 2013-03-21 株式会社東芝 半導体装置及びその製造方法
JP5608384B2 (ja) 2010-02-05 2014-10-15 東京エレクトロン株式会社 半導体装置の製造方法及びプラズマエッチング装置
ATE551439T1 (de) 2010-02-08 2012-04-15 Roth & Rau Ag PARALLELER PLATTENREAKTOR ZUR GLEICHMÄßIGEN DÜNNFILMABLAGERUNG MIT REDUZIERTER WERKZEUGAUFSTELLFLÄCHE
US8946828B2 (en) 2010-02-09 2015-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having elevated structure and method of manufacturing the same
US8361338B2 (en) 2010-02-11 2013-01-29 Taiwan Semiconductor Manufacturing Company, Ltd. Hard mask removal method
US20110198034A1 (en) 2010-02-11 2011-08-18 Jennifer Sun Gas distribution showerhead with coating material for semiconductor processing
JP5476152B2 (ja) 2010-02-16 2014-04-23 積水化学工業株式会社 窒化シリコンのエッチング方法及び装置
US8456009B2 (en) 2010-02-18 2013-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure having an air-gap region and a method of manufacturing the same
JP5662079B2 (ja) 2010-02-24 2015-01-28 東京エレクトロン株式会社 エッチング処理方法
US20110207332A1 (en) 2010-02-25 2011-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Thin film coated process kits for semiconductor manufacturing tools
KR101214758B1 (ko) 2010-02-26 2012-12-21 성균관대학교산학협력단 식각 방법
CN102844848A (zh) 2010-03-05 2012-12-26 应用材料公司 通过自由基成分化学气相沉积的共形层
US9175394B2 (en) 2010-03-12 2015-11-03 Applied Materials, Inc. Atomic layer deposition chamber with multi inject
US8354660B2 (en) 2010-03-16 2013-01-15 Sandisk 3D Llc Bottom electrodes for use with metal oxide resistivity switching layers
JP5450187B2 (ja) 2010-03-16 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US8435902B2 (en) 2010-03-17 2013-05-07 Applied Materials, Inc. Invertable pattern loading with dry etch
US20130012030A1 (en) 2010-03-17 2013-01-10 Applied Materials, Inc. Method and apparatus for remote plasma source assisted silicon-containing film deposition
US8574447B2 (en) 2010-03-31 2013-11-05 Lam Research Corporation Inorganic rapid alternating process for silicon etch
US20110256692A1 (en) 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US20110256421A1 (en) 2010-04-16 2011-10-20 United Technologies Corporation Metallic coating for single crystal alloys
US8288268B2 (en) 2010-04-29 2012-10-16 International Business Machines Corporation Microelectronic structure including air gap
US20110265951A1 (en) 2010-04-30 2011-11-03 Applied Materials, Inc. Twin chamber processing system
US8562742B2 (en) 2010-04-30 2013-10-22 Applied Materials, Inc. Apparatus for radial delivery of gas to a chamber and methods of use thereof
US8475674B2 (en) 2010-04-30 2013-07-02 Applied Materials, Inc. High-temperature selective dry etch having reduced post-etch solid residue
US20110265884A1 (en) 2010-04-30 2011-11-03 Applied Materials, Inc. Twin chamber processing system with shared vacuum pump
US8721798B2 (en) 2010-04-30 2014-05-13 Applied Materials, Inc. Methods for processing substrates in process systems having shared resources
US20110278260A1 (en) 2010-05-14 2011-11-17 Applied Materials, Inc. Inductive plasma source with metallic shower head using b-field concentrator
US8361906B2 (en) 2010-05-20 2013-01-29 Applied Materials, Inc. Ultra high selectivity ashable hard mask film
US20140154668A1 (en) 2010-05-21 2014-06-05 The Trustees Of Princeton University Structures for Enhancement of Local Electric Field, Light Absorption, Light Radiation, Material Detection and Methods for Making and Using of the Same.
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US8373239B2 (en) 2010-06-08 2013-02-12 International Business Machines Corporation Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric
JP5751895B2 (ja) 2010-06-08 2015-07-22 株式会社日立国際電気 半導体装置の製造方法、クリーニング方法および基板処理装置
JP2011258768A (ja) 2010-06-09 2011-12-22 Sumitomo Electric Ind Ltd 炭化珪素基板、エピタキシャル層付き基板、半導体装置および炭化珪素基板の製造方法
US20110304078A1 (en) 2010-06-14 2011-12-15 Applied Materials, Inc. Methods for removing byproducts from load lock chambers
US8928061B2 (en) 2010-06-30 2015-01-06 SanDisk Technologies, Inc. Three dimensional NAND device with silicide containing floating gates
US8349681B2 (en) 2010-06-30 2013-01-08 Sandisk Technologies Inc. Ultrahigh density monolithic, three dimensional vertical NAND memory device
US20120009796A1 (en) 2010-07-09 2012-01-12 Applied Materials, Inc. Post-ash sidewall healing
JP5463224B2 (ja) 2010-07-09 2014-04-09 日本発條株式会社 流路付きプレートの製造方法、流路付きプレート、温度調節プレート、コールドプレート、及びシャワープレート
KR101202352B1 (ko) 2010-07-19 2012-11-16 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
US8338211B2 (en) 2010-07-27 2012-12-25 Amtech Systems, Inc. Systems and methods for charging solar cell layers
US8278203B2 (en) 2010-07-28 2012-10-02 Sandisk Technologies Inc. Metal control gate formation in non-volatile storage
US20130059448A1 (en) 2011-09-07 2013-03-07 Lam Research Corporation Pulsed Plasma Chamber in Dual Chamber Configuration
US8869742B2 (en) 2010-08-04 2014-10-28 Lam Research Corporation Plasma processing chamber with dual axial gas injection and exhaust
US9184028B2 (en) 2010-08-04 2015-11-10 Lam Research Corporation Dual plasma volume processing apparatus for neutral/ion flux control
US9449793B2 (en) 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
JP5198611B2 (ja) 2010-08-12 2013-05-15 株式会社東芝 ガス供給部材、プラズマ処理装置およびイットリア含有膜の形成方法
US8222125B2 (en) 2010-08-12 2012-07-17 Ovshinsky Innovation, Llc Plasma deposition of amorphous semiconductors at microwave frequencies
WO2012052858A1 (en) 2010-08-16 2012-04-26 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Etching of oxide materials
US20120017989A1 (en) 2010-08-24 2012-01-26 Pai-Chun Chang Metal and metal oxide surface texturing
KR20120022251A (ko) 2010-09-01 2012-03-12 삼성전자주식회사 플라즈마 식각방법 및 그의 장치
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
US8580699B2 (en) 2010-09-10 2013-11-12 Applied Materials, Inc. Embedded catalyst for atomic layer deposition of silicon oxide
US20120088356A1 (en) 2010-09-14 2012-04-12 Applied Materials, Inc. Integrated platform for in-situ doping and activation of substrates
KR20120029291A (ko) 2010-09-16 2012-03-26 삼성전자주식회사 반도체 소자 및 그 제조 방법
US8840754B2 (en) 2010-09-17 2014-09-23 Lam Research Corporation Polar regions for electrostatic de-chucking with lift pins
WO2012039932A2 (en) 2010-09-21 2012-03-29 Applied Materials, Inc. Methods for forming layers on a substrate
US8633423B2 (en) 2010-10-14 2014-01-21 Applied Materials, Inc. Methods and apparatus for controlling substrate temperature in a process chamber
KR101209003B1 (ko) 2010-10-14 2012-12-06 주식회사 유진테크 3차원 구조의 메모리 소자를 제조하는 방법 및 장치
US8183134B2 (en) 2010-10-19 2012-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces
US20120097330A1 (en) 2010-10-20 2012-04-26 Applied Materials, Inc. Dual delivery chamber design
US9123762B2 (en) 2010-10-22 2015-09-01 Applied Materials, Inc. Substrate support with symmetrical feed structure
JP5544343B2 (ja) 2010-10-29 2014-07-09 東京エレクトロン株式会社 成膜装置
WO2012058377A2 (en) 2010-10-29 2012-05-03 Applied Materials, Inc. Methods for etching oxide layers using process gas pulsing
US9111994B2 (en) 2010-11-01 2015-08-18 Magnachip Semiconductor, Ltd. Semiconductor device and method of fabricating the same
WO2012061593A2 (en) 2010-11-03 2012-05-10 Applied Materials, Inc. Apparatus and methods for deposition of silicon carbide and silicon carbonitride films
US8133349B1 (en) 2010-11-03 2012-03-13 Lam Research Corporation Rapid and uniform gas switching for a plasma etch process
US8389416B2 (en) 2010-11-22 2013-03-05 Tokyo Electron Limited Process for etching silicon with selectivity to silicon-germanium
KR20120058962A (ko) 2010-11-30 2012-06-08 삼성전자주식회사 반도체 장치의 제조 방법
US8475103B2 (en) 2010-12-09 2013-07-02 Hamilton Sundstand Corporation Sealing washer assembly for large diameter holes on flat surfaces
US8470713B2 (en) 2010-12-13 2013-06-25 International Business Machines Corporation Nitride etch for improved spacer uniformity
US8741778B2 (en) 2010-12-14 2014-06-03 Applied Materials, Inc. Uniform dry etch in two stages
US9719169B2 (en) 2010-12-20 2017-08-01 Novellus Systems, Inc. System and apparatus for flowable deposition in semiconductor fabrication
JP5728221B2 (ja) 2010-12-24 2015-06-03 東京エレクトロン株式会社 基板処理方法及び記憶媒体
US20120177846A1 (en) 2011-01-07 2012-07-12 Applied Materials, Inc. Radical steam cvd
KR101246170B1 (ko) 2011-01-13 2013-03-25 국제엘렉트릭코리아 주식회사 반도체 제조에 사용되는 분사부재 및 그것을 갖는 플라즈마 처리 장치
KR101529578B1 (ko) 2011-01-14 2015-06-19 성균관대학교산학협력단 플라즈마 기판 처리 장치 및 방법
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US20120180954A1 (en) 2011-01-18 2012-07-19 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8363476B2 (en) 2011-01-19 2013-01-29 Macronix International Co., Ltd. Memory device, manufacturing method and operating method of the same
US9018692B2 (en) 2011-01-19 2015-04-28 Macronix International Co., Ltd. Low cost scalable 3D memory
WO2012098871A1 (ja) 2011-01-20 2012-07-26 東京エレクトロン株式会社 真空処理装置
US8723423B2 (en) 2011-01-25 2014-05-13 Advanced Energy Industries, Inc. Electrostatic remote plasma source
US9068265B2 (en) 2011-02-01 2015-06-30 Applied Materials, Inc. Gas distribution plate with discrete protective elements
KR101732936B1 (ko) 2011-02-14 2017-05-08 삼성전자주식회사 반도체 소자의 미세 패턴 형성 방법
US8771539B2 (en) 2011-02-22 2014-07-08 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch
US20120216955A1 (en) 2011-02-25 2012-08-30 Toshiba Materials Co., Ltd. Plasma processing apparatus
US9281207B2 (en) 2011-02-28 2016-03-08 Inpria Corporation Solution processible hardmasks for high resolution lithography
WO2012148568A1 (en) 2011-03-01 2012-11-01 Applied Materials, Inc. Method and apparatus for substrate transfer and radical confinement
CN103403852B (zh) 2011-03-01 2016-06-08 应用材料公司 双负载闸配置的消除及剥离处理腔室
TW201246362A (en) 2011-03-01 2012-11-16 Univ King Abdullah Sci & Tech Silicon germanium mask for deep silicon etching
EP2681088B1 (en) 2011-03-02 2016-11-23 Game Changers, Llc Air cushion transport
US9441296B2 (en) 2011-03-04 2016-09-13 Novellus Systems, Inc. Hybrid ceramic showerhead
FR2972563B1 (fr) 2011-03-07 2013-03-01 Altis Semiconductor Snc Procédé de traitement d'une couche de nitrure de métal oxydée
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US20120238108A1 (en) 2011-03-14 2012-09-20 Applied Materials, Inc. Two-stage ozone cure for dielectric films
TWI534291B (zh) 2011-03-18 2016-05-21 應用材料股份有限公司 噴淋頭組件
KR101884003B1 (ko) 2011-03-22 2018-07-31 어플라이드 머티어리얼스, 인코포레이티드 화학 기상 증착 챔버를 위한 라이너 조립체
US9330953B2 (en) 2011-03-23 2016-05-03 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck device
US8980418B2 (en) 2011-03-24 2015-03-17 Uchicago Argonne, Llc Sequential infiltration synthesis for advanced lithography
JP5815967B2 (ja) 2011-03-31 2015-11-17 東京エレクトロン株式会社 基板洗浄装置及び真空処理システム
JP6003011B2 (ja) 2011-03-31 2016-10-05 東京エレクトロン株式会社 基板処理装置
JP5864879B2 (ja) 2011-03-31 2016-02-17 東京エレクトロン株式会社 基板処理装置及びその制御方法
US9196463B2 (en) 2011-04-07 2015-11-24 Varian Semiconductor Equipment Associates, Inc. System and method for plasma monitoring using microwaves
US8460569B2 (en) 2011-04-07 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Method and system for post-etch treatment of patterned substrate features
US20120258607A1 (en) 2011-04-11 2012-10-11 Lam Research Corporation E-Beam Enhanced Decoupled Source for Semiconductor Processing
US8815720B2 (en) 2011-04-12 2014-08-26 Varian Semiconductor Equipment Associates, Inc. Method of etching a workpiece
US9695510B2 (en) 2011-04-21 2017-07-04 Kurt J. Lesker Company Atomic layer deposition apparatus and process
US8415250B2 (en) 2011-04-29 2013-04-09 International Business Machines Corporation Method of forming silicide contacts of different shapes selectively on regions of a semiconductor device
US8298954B1 (en) 2011-05-06 2012-10-30 International Business Machines Corporation Sidewall image transfer process employing a cap material layer for a metal nitride layer
US20120285621A1 (en) 2011-05-10 2012-11-15 Applied Materials, Inc. Semiconductor chamber apparatus for dielectric processing
EP2707375A4 (en) 2011-05-13 2015-01-07 Greenct Canada MONO-METALLIC GROUP-11 PRECURSOR COMPOUNDS AND USE THEREOF IN A METAL SEPARATION
US9012283B2 (en) 2011-05-16 2015-04-21 International Business Machines Corporation Integrated circuit (IC) chip having both metal and silicon gate field effect transistors (FETs) and method of manufacture
US8663389B2 (en) 2011-05-21 2014-03-04 Andrew Peter Clarke Method and apparatus for crystal growth using a membrane-assisted semi-closed reactor
JP5563522B2 (ja) 2011-05-23 2014-07-30 東京エレクトロン株式会社 プラズマ処理装置
US8562785B2 (en) 2011-05-31 2013-10-22 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
KR101390900B1 (ko) 2011-05-31 2014-04-30 세메스 주식회사 기판처리장치
US8466073B2 (en) 2011-06-03 2013-06-18 Applied Materials, Inc. Capping layer for reduced outgassing
US9589772B2 (en) 2011-06-09 2017-03-07 Korea Basic Science Institute Plasma generation source including belt-type magnet and thin film deposition system using this
US8637372B2 (en) 2011-06-29 2014-01-28 GlobalFoundries, Inc. Methods for fabricating a FINFET integrated circuit on a bulk silicon substrate
US8883637B2 (en) 2011-06-30 2014-11-11 Novellus Systems, Inc. Systems and methods for controlling etch selectivity of various materials
US9117867B2 (en) 2011-07-01 2015-08-25 Applied Materials, Inc. Electrostatic chuck assembly
US9054048B2 (en) 2011-07-05 2015-06-09 Applied Materials, Inc. NH3 containing plasma nitridation of a layer on a substrate
CN102867748B (zh) 2011-07-06 2015-09-23 中国科学院微电子研究所 一种晶体管及其制作方法和包括该晶体管的半导体芯片
KR20110086540A (ko) 2011-07-12 2011-07-28 조인숙 불소화합물을 이용한 필름의 선택적인 식각 방법
US8741775B2 (en) 2011-07-20 2014-06-03 Applied Materials, Inc. Method of patterning a low-K dielectric film
US8617411B2 (en) 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
US8921177B2 (en) 2011-07-22 2014-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating an integrated circuit device
US8974601B2 (en) 2011-07-29 2015-03-10 Semes Co., Ltd. Apparatuses, systems and methods for treating substrate
US20130034666A1 (en) 2011-08-01 2013-02-07 Applied Materials, Inc. Inductive plasma sources for wafer processing and chamber cleaning
US8771536B2 (en) 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
KR101271247B1 (ko) 2011-08-02 2013-06-07 주식회사 유진테크 에피택셜 공정을 위한 반도체 제조설비
CN102915902B (zh) 2011-08-02 2015-11-25 中微半导体设备(上海)有限公司 一种电容耦合式的等离子体处理装置及其基片加工方法
JP5893864B2 (ja) 2011-08-02 2016-03-23 東京エレクトロン株式会社 プラズマエッチング方法
US9117759B2 (en) 2011-08-10 2015-08-25 Micron Technology, Inc. Methods of forming bulb-shaped trenches in silicon
US20130045605A1 (en) 2011-08-18 2013-02-21 Applied Materials, Inc. Dry-etch for silicon-and-nitrogen-containing films
US8735291B2 (en) 2011-08-25 2014-05-27 Tokyo Electron Limited Method for etching high-k dielectric using pulsed bias power
US8679982B2 (en) 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
US8679983B2 (en) 2011-09-01 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
US9039911B2 (en) 2012-08-27 2015-05-26 Lam Research Corporation Plasma-enhanced etching in an augmented plasma processing system
US20130217243A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Doping of dielectric layers
US8808562B2 (en) 2011-09-12 2014-08-19 Tokyo Electron Limited Dry metal etching method
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
US20130260564A1 (en) 2011-09-26 2013-10-03 Applied Materials, Inc. Insensitive dry removal process for semiconductor integration
US8664012B2 (en) 2011-09-30 2014-03-04 Tokyo Electron Limited Combined silicon oxide etch and contamination removal process
US8551891B2 (en) 2011-10-04 2013-10-08 Applied Materials, Inc. Remote plasma burn-in
EP2764408B1 (en) 2011-10-06 2019-08-21 ASML Netherlands B.V. Chuck, lithography apparatus and method of using a chuck
US9653267B2 (en) 2011-10-06 2017-05-16 Applied Materials, Inc. Temperature controlled chamber liner
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
US20130087309A1 (en) 2011-10-11 2013-04-11 Applied Materials, Inc. Substrate support with temperature control
JP5740281B2 (ja) 2011-10-20 2015-06-24 東京エレクトロン株式会社 金属膜のドライエッチング方法
US9666414B2 (en) 2011-10-27 2017-05-30 Applied Materials, Inc. Process chamber for etching low k and other dielectric films
US20130107415A1 (en) 2011-10-28 2013-05-02 Applied Materials, Inc. Electrostatic chuck
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US9574268B1 (en) 2011-10-28 2017-02-21 Asm America, Inc. Pulsed valve manifold for atomic layer deposition
US20130115372A1 (en) 2011-11-08 2013-05-09 Primestar Solar, Inc. High emissivity distribution plate in vapor deposition apparatus and processes
WO2013070438A1 (en) 2011-11-08 2013-05-16 Applied Materials, Inc. Precursor distribution features for improved deposition uniformity
JP5779482B2 (ja) 2011-11-15 2015-09-16 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US8652298B2 (en) 2011-11-21 2014-02-18 Lam Research Corporation Triode reactor design with multiple radiofrequency powers
US8900364B2 (en) 2011-11-29 2014-12-02 Intermolecular, Inc. High productivity vapor processing system
US8440523B1 (en) 2011-12-07 2013-05-14 International Business Machines Corporation Micromechanical device and methods to fabricate same using hard mask resistant to structure release etch
US20130149866A1 (en) 2011-12-12 2013-06-13 Texas Instruments Incorporated Baffle plate for semiconductor processing apparatus
US10825708B2 (en) 2011-12-15 2020-11-03 Applied Materials, Inc. Process kit components for use with an extended and independent RF powered cathode substrate for extreme edge tunability
KR20130072911A (ko) 2011-12-22 2013-07-02 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 그 제조 방법
KR101878311B1 (ko) 2011-12-30 2018-07-17 삼성전자주식회사 ｈｉｇｈ-Ｋ막을 스페이서 에치 스톱으로 이용하는 반도체 소자 형성 방법 및 관련된 소자
US8603891B2 (en) 2012-01-20 2013-12-10 Micron Technology, Inc. Methods for forming vertical memory devices and apparatuses
US8747686B2 (en) 2012-01-27 2014-06-10 Applied Materials, Inc. Methods of end point detection for substrate fabrication processes
JP6010406B2 (ja) 2012-01-27 2016-10-19 東京エレクトロン株式会社 マイクロ波放射機構、マイクロ波プラズマ源および表面波プラズマ処理装置
SG11201403527UA (en) 2012-02-08 2014-09-26 Iwatani Corp Method for treating inner surface of chlorine trifluoride supply passage in apparatus using chlorine trifluoride
US20130175654A1 (en) 2012-02-10 2013-07-11 Sylvain Muckenhirn Bulk nanohole structures for thermoelectric devices and methods for making the same
WO2013130191A1 (en) 2012-02-29 2013-09-06 Applied Materials, Inc. Abatement and strip process chamber in a load lock configuration
TWI602283B (zh) 2012-03-27 2017-10-11 諾發系統有限公司 鎢特徵部塡充
US8747610B2 (en) 2012-03-30 2014-06-10 Tokyo Electron Limited Plasma source pumping and gas injection baffle
US8937800B2 (en) 2012-04-24 2015-01-20 Applied Materials, Inc. Electrostatic chuck with advanced RF and temperature uniformity
US9948214B2 (en) 2012-04-26 2018-04-17 Applied Materials, Inc. High temperature electrostatic chuck with real-time heat zone regulating capability
US20130284369A1 (en) 2012-04-26 2013-10-31 Applied Materials, Inc. Two-phase operation of plasma chamber by phase locked loop
US9162236B2 (en) 2012-04-26 2015-10-20 Applied Materials, Inc. Proportional and uniform controlled gas flow delivery for dry plasma etch apparatus
US9161428B2 (en) 2012-04-26 2015-10-13 Applied Materials, Inc. Independent control of RF phases of separate coils of an inductively coupled plasma reactor
KR20150013627A (ko) 2012-04-26 2015-02-05 어플라이드 머티어리얼스, 인코포레이티드 Ｅｓｃ 본딩 접착제 부식을 방지하기 위한 방법들 및 장치
JP6005579B2 (ja) 2012-04-27 2016-10-12 日本碍子株式会社 半導体製造装置用部材
US9394615B2 (en) 2012-04-27 2016-07-19 Applied Materials, Inc. Plasma resistant ceramic coated conductive article
US9976215B2 (en) 2012-05-01 2018-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor film formation apparatus and process
JP2013235912A (ja) 2012-05-08 2013-11-21 Tokyo Electron Ltd 被処理基体をエッチングする方法、及びプラズマエッチング装置
CN103388132B (zh) 2012-05-11 2015-11-25 中微半导体设备(上海)有限公司 气体喷淋头、其制造方法及薄膜生长反应器
US20130298942A1 (en) 2012-05-14 2013-11-14 Applied Materials, Inc. Etch remnant removal
KR101917815B1 (ko) 2012-05-31 2018-11-13 에스케이하이닉스 주식회사 에어갭을 구비한 반도체장치 및 그 제조 방법
FR2991320B1 (fr) 2012-06-05 2014-06-27 Commissariat Energie Atomique Procede de preparation d'amines methylees
US8974164B2 (en) 2012-06-26 2015-03-10 Newfrey Llc Plastic high heat fastener
US9034773B2 (en) 2012-07-02 2015-05-19 Novellus Systems, Inc. Removal of native oxide with high selectivity
US8916477B2 (en) 2012-07-02 2014-12-23 Novellus Systems, Inc. Polysilicon etch with high selectivity
US8802572B2 (en) 2012-07-10 2014-08-12 Applied Materials, Inc. Method of patterning a low-k dielectric film
KR101989514B1 (ko) 2012-07-11 2019-06-14 삼성전자주식회사 반도체 소자 및 그 제조 방법
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9184030B2 (en) 2012-07-19 2015-11-10 Lam Research Corporation Edge exclusion control with adjustable plasma exclusion zone ring
US9631273B2 (en) 2012-07-25 2017-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for dielectric deposition process
JP6160619B2 (ja) 2012-08-01 2017-07-12 Tdk株式会社 フェライト磁性材料、フェライト焼結磁石及びモータ
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US8772888B2 (en) 2012-08-10 2014-07-08 Avalanche Technology Inc. MTJ MRAM with stud patterning
US8747680B1 (en) 2012-08-14 2014-06-10 Everspin Technologies, Inc. Method of manufacturing a magnetoresistive-based device
WO2014116304A2 (en) 2012-08-23 2014-07-31 Applied Materials, Inc. Method and hardware for cleaning uv chambers
WO2014035933A1 (en) 2012-08-28 2014-03-06 Applied Materials, Inc. Methods and apparatus for forming tantalum silicate layers on germanium or iii-v semiconductor devices
US20140062285A1 (en) 2012-08-29 2014-03-06 Mks Instruments, Inc. Method and Apparatus for a Large Area Inductive Plasma Source
US9121097B2 (en) 2012-08-31 2015-09-01 Novellus Systems, Inc. Variable showerhead flow by varying internal baffle conductance
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
JP6027374B2 (ja) 2012-09-12 2016-11-16 東京エレクトロン株式会社 プラズマ処理装置及びフィルタユニット
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US20140099794A1 (en) * 2012-09-21 2014-04-10 Applied Materials, Inc. Radical chemistry modulation and control using multiple flow pathways
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US9018022B2 (en) 2012-09-24 2015-04-28 Lam Research Corporation Showerhead electrode assembly in a capacitively coupled plasma processing apparatus
TWI604528B (zh) 2012-10-02 2017-11-01 應用材料股份有限公司 使用電漿預處理與高溫蝕刻劑沉積的方向性二氧化矽蝕刻
TWI591712B (zh) 2012-10-03 2017-07-11 應用材料股份有限公司 使用低溫蝕刻劑沉積與電漿後處理的方向性二氧化矽蝕刻
KR102137617B1 (ko) 2012-10-19 2020-07-24 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
CN103794460B (zh) 2012-10-29 2016-12-21 中微半导体设备(上海)有限公司 用于半导体装置性能改善的涂层
US9165783B2 (en) 2012-11-01 2015-10-20 Applied Materials, Inc. Method of patterning a low-k dielectric film
JP6035117B2 (ja) 2012-11-09 2016-11-30 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
US8765574B2 (en) 2012-11-09 2014-07-01 Applied Materials, Inc. Dry etch process
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9064816B2 (en) 2012-11-30 2015-06-23 Applied Materials, Inc. Dry-etch for selective oxidation removal
US9777564B2 (en) 2012-12-03 2017-10-03 Pyrophase, Inc. Stimulating production from oil wells using an RF dipole antenna
WO2014092856A1 (en) 2012-12-14 2014-06-19 The Penn State Research Foundation Ultra-high speed anisotropic reactive ion etching
US9982343B2 (en) 2012-12-14 2018-05-29 Applied Materials, Inc. Apparatus for providing plasma to a process chamber
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US10316409B2 (en) * 2012-12-21 2019-06-11 Novellus Systems, Inc. Radical source design for remote plasma atomic layer deposition
JP6173684B2 (ja) 2012-12-25 2017-08-02 株式会社日立ハイテクノロジーズ 半導体装置の製造方法
WO2014104753A1 (ko) 2012-12-28 2014-07-03 주식회사 뉴파워 프라즈마 플라즈마 반응기 및 이를 이용한 플라즈마 점화 방법
JP6328931B2 (ja) 2012-12-31 2018-05-23 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジストパターントリミング方法
US9165823B2 (en) 2013-01-08 2015-10-20 Macronix International Co., Ltd. 3D stacking semiconductor device and manufacturing method thereof
US9093389B2 (en) 2013-01-16 2015-07-28 Applied Materials, Inc. Method of patterning a silicon nitride dielectric film
JP6080571B2 (ja) 2013-01-31 2017-02-15 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US8970114B2 (en) 2013-02-01 2015-03-03 Lam Research Corporation Temperature controlled window of a plasma processing chamber component
US10256079B2 (en) * 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
JP2014154421A (ja) 2013-02-12 2014-08-25 Tokyo Electron Ltd プラズマ処理装置、プラズマ処理方法、および高周波発生器
US20140234466A1 (en) 2013-02-21 2014-08-21 HGST Netherlands B.V. Imprint mold and method for making using sidewall spacer line doubling
US9449795B2 (en) 2013-02-28 2016-09-20 Novellus Systems, Inc. Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor
TWI487004B (zh) 2013-03-01 2015-06-01 Winbond Electronics Corp 圖案化的方法及記憶體元件的形成方法
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
KR102064914B1 (ko) 2013-03-06 2020-01-10 삼성전자주식회사 식각 공정 장치 및 식각 공정 방법
US8801952B1 (en) 2013-03-07 2014-08-12 Applied Materials, Inc. Conformal oxide dry etch
US10170282B2 (en) 2013-03-08 2019-01-01 Applied Materials, Inc. Insulated semiconductor faceplate designs
US8859433B2 (en) 2013-03-11 2014-10-14 International Business Machines Corporation DSA grapho-epitaxy process with etch stop material
US8946023B2 (en) 2013-03-12 2015-02-03 Sandisk Technologies Inc. Method of making a vertical NAND device using sequential etching of multilayer stacks
KR102021988B1 (ko) 2013-03-12 2019-09-17 삼성전자주식회사 반도체 소자 및 그의 제조 방법
US20140262031A1 (en) 2013-03-12 2014-09-18 Sergey G. BELOSTOTSKIY Multi-mode etch chamber source assembly
US20140273451A1 (en) 2013-03-13 2014-09-18 Applied Materials, Inc. Tungsten deposition sequence
TWI625424B (zh) 2013-03-13 2018-06-01 應用材料股份有限公司 蝕刻包含過渡金屬的膜之方法
US20140273487A1 (en) 2013-03-13 2014-09-18 Applied Materials, Inc. Pulsed dc plasma etching process and apparatus
US20140273525A1 (en) 2013-03-13 2014-09-18 Intermolecular, Inc. Atomic Layer Deposition of Reduced-Leakage Post-Transition Metal Oxide Films
US9411237B2 (en) 2013-03-14 2016-08-09 Applied Materials, Inc. Resist hardening and development processes for semiconductor device manufacturing
US9006106B2 (en) 2013-03-14 2015-04-14 Applied Materials, Inc. Method of removing a metal hardmask
US9556507B2 (en) 2013-03-14 2017-01-31 Applied Materials, Inc. Yttria-based material coated chemical vapor deposition chamber heater
US9117670B2 (en) * 2013-03-14 2015-08-25 Sunedison Semiconductor Limited (Uen201334164H) Inject insert liner assemblies for chemical vapor deposition systems and methods of using same
US8946076B2 (en) 2013-03-15 2015-02-03 Micron Technology, Inc. Methods of fabricating integrated structures, and methods of forming vertically-stacked memory cells
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9276011B2 (en) 2013-03-15 2016-03-01 Micron Technology, Inc. Cell pillar structures and integrated flows
WO2014145263A1 (en) 2013-03-15 2014-09-18 Dr. Py Institute, Llc Single-use needle assembly and method
JP5386046B1 (ja) 2013-03-27 2014-01-15 エピクルー株式会社 サセプタ支持部およびこのサセプタ支持部を備えるエピタキシャル成長装置
US10941501B2 (en) 2013-03-29 2021-03-09 Analytical Specialties, Inc. Method and composition for metal finishing
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
US9230819B2 (en) 2013-04-05 2016-01-05 Lam Research Corporation Internal plasma grid applications for semiconductor fabrication in context of ion-ion plasma processing
US20140308758A1 (en) 2013-04-10 2014-10-16 Applied Materials, Inc. Patterning magnetic memory
US8748322B1 (en) 2013-04-16 2014-06-10 Applied Materials, Inc. Silicon oxide recess etch
US20140311581A1 (en) 2013-04-19 2014-10-23 Applied Materials, Inc. Pressure controller configuration for semiconductor processing applications
US9449797B2 (en) 2013-05-07 2016-09-20 Lam Research Corporation Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface
US9720022B2 (en) 2015-05-19 2017-08-01 Lam Research Corporation Systems and methods for providing characteristics of an impedance matching model for use with matching networks
US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US20140342569A1 (en) 2013-05-16 2014-11-20 Applied Materials, Inc. Near surface etch selectivity enhancement
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
US9082826B2 (en) 2013-05-24 2015-07-14 Lam Research Corporation Methods and apparatuses for void-free tungsten fill in three-dimensional semiconductor features
JP6002087B2 (ja) 2013-05-29 2016-10-05 東京エレクトロン株式会社 グラフェンの生成方法
US20140357083A1 (en) 2013-05-31 2014-12-04 Applied Materials, Inc. Directed block copolymer self-assembly patterns for advanced photolithography applications
JP6180799B2 (ja) 2013-06-06 2017-08-16 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR102038647B1 (ko) 2013-06-21 2019-10-30 주식회사 원익아이피에스 기판 지지 장치 및 이를 구비하는 기판 처리 장치
US10808317B2 (en) 2013-07-03 2020-10-20 Lam Research Corporation Deposition apparatus including an isothermal processing zone
US9677176B2 (en) 2013-07-03 2017-06-13 Novellus Systems, Inc. Multi-plenum, dual-temperature showerhead
US8871651B1 (en) 2013-07-12 2014-10-28 Globalfoundries Inc. Mask formation processing
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US8932947B1 (en) 2013-07-23 2015-01-13 Applied Materials, Inc. Methods for forming a round bottom silicon trench recess for semiconductor applications
US9362163B2 (en) 2013-07-30 2016-06-07 Lam Research Corporation Methods and apparatuses for atomic layer cleaning of contacts and vias
KR102154112B1 (ko) 2013-08-01 2020-09-09 삼성전자주식회사 금속 배선들을 포함하는 반도체 장치 및 그 제조 방법
US20150050812A1 (en) 2013-08-13 2015-02-19 Globalfoundries Inc. Wafer-less auto clean of processing chamber
US9543163B2 (en) 2013-08-20 2017-01-10 Applied Materials, Inc. Methods for forming features in a material layer utilizing a combination of a main etching and a cyclical etching process
WO2015031163A1 (en) 2013-08-27 2015-03-05 Tokyo Electron Limited Method for laterally trimming a hardmask
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
JP5837012B2 (ja) 2013-09-12 2015-12-24 ラピスセミコンダクタ株式会社 モニタリング方法、プラズマモニタリング方法、モニタリングシステム及びプラズマモニタリングシステム
US9230980B2 (en) 2013-09-15 2016-01-05 Sandisk Technologies Inc. Single-semiconductor-layer channel in a memory opening for a three-dimensional non-volatile memory device
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US9051655B2 (en) 2013-09-16 2015-06-09 Applied Materials, Inc. Boron ionization for aluminum oxide etch enhancement
US8980758B1 (en) 2013-09-17 2015-03-17 Applied Materials, Inc. Methods for etching an etching stop layer utilizing a cyclical etching process
TWI720422B (zh) 2013-09-27 2021-03-01 美商應用材料股份有限公司 實現無縫鈷間隙填充之方法
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
US9214377B2 (en) 2013-10-31 2015-12-15 Applied Materials, Inc. Methods for silicon recess structures in a substrate by utilizing a doping layer
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
SG11201600440VA (en) 2013-11-06 2016-02-26 Mattson Tech Inc Novel mask removal process strategy for vertical nand device
JP2017504955A (ja) 2013-11-06 2017-02-09 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｄｃバイアス変調による、粒子発生抑制装置
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US8945414B1 (en) 2013-11-13 2015-02-03 Intermolecular, Inc. Oxide removal by remote plasma treatment with fluorine and oxygen radicals
US9330937B2 (en) 2013-11-13 2016-05-03 Intermolecular, Inc. Etching of semiconductor structures that include titanium-based layers
US9514953B2 (en) 2013-11-20 2016-12-06 Applied Materials, Inc. Methods for barrier layer removal
FR3013503B1 (fr) 2013-11-20 2015-12-18 Commissariat Energie Atomique Procede de gravure selective d’un masque dispose sur un substrat silicie
KR102237700B1 (ko) 2013-11-27 2021-04-08 삼성전자주식회사 수직형 메모리 장치 및 그 제조 방법
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
US20150170926A1 (en) 2013-12-16 2015-06-18 David J. Michalak Dielectric layers having ordered elongate pores
US9312168B2 (en) * 2013-12-16 2016-04-12 Applied Materials, Inc. Air gap structure integration using a processing system
US20150170879A1 (en) 2013-12-17 2015-06-18 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
KR102102787B1 (ko) 2013-12-17 2020-04-22 삼성전자주식회사 기판 처리 장치 및 블록커 플레이트 어셈블리
US20150171008A1 (en) 2013-12-17 2015-06-18 GLOBAL FOUNDRIES Singapore Ptd. Ltd. Integrated circuits with dummy contacts and methods for producing such integrated circuits
US20150170943A1 (en) 2013-12-17 2015-06-18 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9622375B2 (en) 2013-12-31 2017-04-11 Applied Materials, Inc. Electrostatic chuck with external flow adjustments for improved temperature distribution
US9111907B2 (en) 2014-01-02 2015-08-18 Globalfoundries Inc. Silicide protection during contact metallization and resulting semiconductor structures
KR102128465B1 (ko) 2014-01-03 2020-07-09 삼성전자주식회사 수직 구조의 비휘발성 메모리 소자
US9945033B2 (en) 2014-01-06 2018-04-17 Applied Materials, Inc. High efficiency inductively coupled plasma source with customized RF shield for plasma profile control
US20150200042A1 (en) 2014-01-10 2015-07-16 Applied Materials, Inc. Recessing ultra-low k dielectric using remote plasma source
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9299577B2 (en) 2014-01-24 2016-03-29 Applied Materials, Inc. Methods for etching a dielectric barrier layer in a dual damascene structure
US20150214066A1 (en) 2014-01-27 2015-07-30 Applied Materials, Inc. Method for material removal in dry etch reactor
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9502218B2 (en) 2014-01-31 2016-11-22 Applied Materials, Inc. RPS assisted RF plasma source for semiconductor processing
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9305749B2 (en) 2014-02-10 2016-04-05 Applied Materials, Inc. Methods of directing magnetic fields in a plasma source, and associated systems
JP6059165B2 (ja) 2014-02-19 2017-01-11 東京エレクトロン株式会社 エッチング方法、及びプラズマ処理装置
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9209031B2 (en) 2014-03-07 2015-12-08 Sandisk Technologies Inc. Metal replacement process for low resistance source contacts in 3D NAND
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9190290B2 (en) 2014-03-31 2015-11-17 Applied Materials, Inc. Halogen-free gas-phase silicon etch
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
KR102175763B1 (ko) 2014-04-09 2020-11-09 삼성전자주식회사 반도체 메모리 장치 및 이의 제조 방법
US9177853B1 (en) 2014-05-14 2015-11-03 Sandisk Technologies Inc. Barrier layer stack for bit line air gap formation
CN104392963B (zh) 2014-05-16 2017-07-11 中国科学院微电子研究所 三维半导体器件制造方法
US9520485B2 (en) 2014-05-21 2016-12-13 Macronix International Co., Ltd. 3D independent double gate flash memory on bounded conductor layer
US9881788B2 (en) 2014-05-22 2018-01-30 Lam Research Corporation Back side deposition apparatus and applications
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US20150345029A1 (en) 2014-05-28 2015-12-03 Applied Materials, Inc. Metal removal
US10269541B2 (en) 2014-06-02 2019-04-23 Applied Materials, Inc. Workpiece processing chamber having a thermal controlled microwave window
US9773683B2 (en) 2014-06-09 2017-09-26 American Air Liquide, Inc. Atomic layer or cyclic plasma etching chemistries and processes
US9666449B2 (en) 2014-06-17 2017-05-30 Micron Technology, Inc. Conductors having a variable concentration of germanium for governing removal rates of the conductor during control gate formation
US20150371865A1 (en) 2014-06-19 2015-12-24 Applied Materials, Inc. High selectivity gas phase silicon nitride removal
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US20150371861A1 (en) 2014-06-23 2015-12-24 Applied Materials, Inc. Protective silicon oxide patterning
US9502518B2 (en) 2014-06-23 2016-11-22 Stmicroelectronics, Inc. Multi-channel gate-all-around FET
KR102248205B1 (ko) 2014-06-25 2021-05-04 삼성전자주식회사 수직 채널 및 에어 갭을 갖는 반도체 소자
US9768270B2 (en) 2014-06-25 2017-09-19 Sandisk Technologies Llc Method of selectively depositing floating gate material in a memory device
US10487399B2 (en) * 2014-06-26 2019-11-26 Applied Materials, Inc. Atomic layer deposition chamber with counter-flow multi inject
US10196741B2 (en) 2014-06-27 2019-02-05 Applied Materials, Inc. Wafer placement and gap control optimization through in situ feedback
KR20160002543A (ko) 2014-06-30 2016-01-08 세메스 주식회사 기판 처리 장치
US9911579B2 (en) 2014-07-03 2018-03-06 Applied Materials, Inc. Showerhead having a detachable high resistivity gas distribution plate
US20160005833A1 (en) 2014-07-03 2016-01-07 Applied Materials, Inc. Feol low-k spacers
US10192717B2 (en) 2014-07-21 2019-01-29 Applied Materials, Inc. Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US20160043099A1 (en) 2014-08-05 2016-02-11 Applied Materials, Inc. Wordline 3d flash memory air gap
US20160042968A1 (en) 2014-08-05 2016-02-11 Applied Materials, Inc. Integrated oxide and si etch for 3d cell channel mobility improvements
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9460898B2 (en) * 2014-08-08 2016-10-04 Applied Materials, Inc. Plasma generation chamber with smooth plasma resistant coating
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
JP6315809B2 (ja) 2014-08-28 2018-04-25 東京エレクトロン株式会社 エッチング方法
US9558928B2 (en) 2014-08-29 2017-01-31 Lam Research Corporation Contact clean in high-aspect ratio structures
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9735009B2 (en) 2014-09-15 2017-08-15 Applied Materials, Inc. Pre-clean of silicon germanium for pre-metal contact at source and drain and pre-high K at channel
JP5764246B1 (ja) 2014-09-24 2015-08-19 株式会社日立国際電気 基板処理装置、ガス導入シャフト及びガス供給プレート
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9355862B2 (en) 2014-09-24 2016-05-31 Applied Materials, Inc. Fluorine-based hardmask removal
US10083818B2 (en) 2014-09-24 2018-09-25 Applied Materials, Inc. Auto frequency tuned remote plasma source
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9679749B2 (en) * 2014-09-26 2017-06-13 Lam Research Corporation Gas distribution device with actively cooled grid
CN105448737A (zh) 2014-09-30 2016-03-30 联华电子股份有限公司 用以形成硅凹槽的蚀刻制作工艺方法与鳍式场效晶体管
US20160099173A1 (en) 2014-10-03 2016-04-07 Applied Materials, Inc. Methods for etching a barrier layer for an interconnection structure for semiconductor applications
US10407771B2 (en) 2014-10-06 2019-09-10 Applied Materials, Inc. Atomic layer deposition chamber with thermal lid
US9240315B1 (en) 2014-10-10 2016-01-19 Applied Materials, Inc. CVD oxide surface pre-conditioning by inductively coupled O2 plasma
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) * 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
CN107148661B (zh) * 2014-10-17 2019-10-18 朗姆研究公司 包括用于可调气流控制的气体分流器的气体供应输送装置
US10008404B2 (en) 2014-10-17 2018-06-26 Applied Materials, Inc. Electrostatic chuck assembly for high temperature processes
US9652567B2 (en) 2014-10-20 2017-05-16 Lam Research Corporation System, method and apparatus for improving accuracy of RF transmission models for selected portions of an RF transmission path
US9825051B2 (en) 2014-10-22 2017-11-21 Sandisk Technologies Llc Three dimensional NAND device containing fluorine doped layer and method of making thereof
US9508529B2 (en) 2014-10-23 2016-11-29 Lam Research Corporation System, method and apparatus for RF power compensation in a plasma processing system
US9202708B1 (en) 2014-10-24 2015-12-01 Applied Materials, Inc. Doped silicon oxide etch
US10102321B2 (en) 2014-10-24 2018-10-16 Lam Research Corporation System, method and apparatus for refining radio frequency transmission system models
US9368369B2 (en) 2014-11-06 2016-06-14 Applied Materials, Inc. Methods for forming a self-aligned contact via selective lateral etch
US9419135B2 (en) 2014-11-13 2016-08-16 Sandisk Technologies Llc Three dimensional NAND device having reduced wafer bowing and method of making thereof
US9466494B2 (en) 2014-11-18 2016-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Selective growth for high-aspect ration metal fill
US9799509B2 (en) 2014-11-26 2017-10-24 Asm Ip Holding B.V. Cyclic aluminum oxynitride deposition
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
JP6320282B2 (ja) 2014-12-05 2018-05-09 東京エレクトロン株式会社 エッチング方法
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US9951421B2 (en) 2014-12-10 2018-04-24 Lam Research Corporation Inlet for effective mixing and purging
US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
US20160181116A1 (en) 2014-12-18 2016-06-23 Lam Research Corporation Selective nitride etch
US9396961B2 (en) 2014-12-22 2016-07-19 Lam Research Corporation Integrated etch/clean for dielectric etch applications
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US10134750B2 (en) 2014-12-30 2018-11-20 Toshiba Memory Corporation Stacked type semiconductor memory device and method for manufacturing the same
US9431268B2 (en) 2015-01-05 2016-08-30 Lam Research Corporation Isotropic atomic layer etch for silicon and germanium oxides
US9633867B2 (en) 2015-01-05 2017-04-25 Lam Research Corporation Method and apparatus for anisotropic tungsten etching
US9425041B2 (en) 2015-01-06 2016-08-23 Lam Research Corporation Isotropic atomic layer etch for silicon oxides using no activation
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US9779919B2 (en) 2015-01-09 2017-10-03 Hitachi High-Technologies Corporation Plasma processing apparatus and plasma processing method
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
JP2016134530A (ja) 2015-01-20 2016-07-25 株式会社東芝 加工制御装置、加工制御プログラムおよび加工制御方法
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US10354860B2 (en) 2015-01-29 2019-07-16 Versum Materials Us, Llc Method and precursors for manufacturing 3D devices
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160237570A1 (en) 2015-02-13 2016-08-18 Applied Materials, Inc. Gas delivery apparatus for process equipment
JP6396822B2 (ja) 2015-02-16 2018-09-26 東京エレクトロン株式会社 プラズマ処理装置のサセプタの電位を制御する方法
US9275834B1 (en) 2015-02-20 2016-03-01 Applied Materials, Inc. Selective titanium nitride etch
US9343358B1 (en) 2015-02-23 2016-05-17 Sandisk Technologies Inc. Three-dimensional memory device with stress compensation layer within a word line stack
CN107548520B (zh) 2015-02-24 2021-05-25 东芝存储器株式会社 半导体存储装置及其制造方法
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
TWI670749B (zh) 2015-03-13 2019-09-01 美商應用材料股份有限公司 耦接至工藝腔室的電漿源
US9478433B1 (en) 2015-03-30 2016-10-25 Applied Materials, Inc. Cyclic spacer etching process with improved profile control
US9502238B2 (en) 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
KR102452593B1 (ko) 2015-04-15 2022-10-11 삼성전자주식회사 반도체 장치의 제조 방법
US20160307772A1 (en) 2015-04-15 2016-10-20 Applied Materials, Inc. Spacer formation process with flat top profile
US10049862B2 (en) 2015-04-17 2018-08-14 Lam Research Corporation Chamber with vertical support stem for symmetric conductance and RF delivery
US9576815B2 (en) 2015-04-17 2017-02-21 Applied Materials, Inc. Gas-phase silicon nitride selective etch
US9576788B2 (en) 2015-04-24 2017-02-21 Applied Materials, Inc. Cleaning high aspect ratio vias
US9870899B2 (en) 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
US10253412B2 (en) 2015-05-22 2019-04-09 Lam Research Corporation Deposition apparatus including edge plenum showerhead assembly
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
JP6295439B2 (ja) 2015-06-02 2018-03-20 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及び方法、電子デバイスの製造方法
CN107533978B (zh) 2015-06-04 2021-01-08 东芝存储器株式会社 半导体存储装置及其制造方法
US9449843B1 (en) 2015-06-09 2016-09-20 Applied Materials, Inc. Selectively etching metals and metal nitrides conformally
JP2017017277A (ja) 2015-07-06 2017-01-19 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
US9659791B2 (en) 2015-07-16 2017-05-23 Applied Materials, Inc. Metal removal with reduced surface roughness
US9564341B1 (en) 2015-08-04 2017-02-07 Applied Materials, Inc. Gas-phase silicon oxide selective etch
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US9620376B2 (en) 2015-08-19 2017-04-11 Lam Research Corporation Self limiting lateral atomic layer etch
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US9659788B2 (en) 2015-08-31 2017-05-23 American Air Liquide, Inc. Nitrogen-containing compounds for etching semiconductor structures
US10147736B2 (en) 2015-09-03 2018-12-04 Toshiba Memory Corporation Semiconductor memory device and method for manufacturing same
US9837286B2 (en) 2015-09-04 2017-12-05 Lam Research Corporation Systems and methods for selectively etching tungsten in a downstream reactor
US9564338B1 (en) 2015-09-08 2017-02-07 Applied Materials, Inc. Silicon-selective removal
US9412752B1 (en) 2015-09-22 2016-08-09 Macronix International Co., Ltd. Reference line and bit line structure for 3D memory
US9460959B1 (en) 2015-10-02 2016-10-04 Applied Materials, Inc. Methods for pre-cleaning conductive interconnect structures
US9853101B2 (en) 2015-10-07 2017-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Strained nanowire CMOS device and method of forming
JP6868616B2 (ja) 2015-10-08 2021-05-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 背面でのプラズマ点火が低減されたシャワーヘッド
US10192751B2 (en) 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
US20170133202A1 (en) 2015-11-09 2017-05-11 Lam Research Corporation Computer addressable plasma density modification for etch and deposition processes
US10043636B2 (en) 2015-12-10 2018-08-07 Lam Research Corporation Apparatuses and methods for avoiding electrical breakdown from RF terminal to adjacent non-RF terminal
US10861693B2 (en) 2015-12-18 2020-12-08 Applied Materials, Inc. Cleaning method
US9831097B2 (en) 2015-12-18 2017-11-28 Applied Materials, Inc. Methods for selective etching of a silicon material using HF gas without nitrogen etchants
US20170178899A1 (en) 2015-12-18 2017-06-22 Lam Research Corporation Directional deposition on patterned structures
KR20180097763A (ko) 2016-01-20 2018-08-31 어플라이드 머티어리얼스, 인코포레이티드 측방향 하드마스크 리세스 감소를 위한 하이브리드 탄소 하드마스크
US10074730B2 (en) 2016-01-28 2018-09-11 International Business Machines Corporation Forming stacked nanowire semiconductor device
US10147588B2 (en) 2016-02-12 2018-12-04 Lam Research Corporation System and method for increasing electron density levels in a plasma of a substrate processing system
TWI677593B (zh) 2016-04-01 2019-11-21 美商應用材料股份有限公司 用於提供均勻流動的氣體的設備及方法
KR102649369B1 (ko) 2016-04-11 2024-03-21 삼성전자주식회사 반도체 소자 및 그 제조 방법
WO2017184223A1 (en) 2016-04-22 2017-10-26 Applied Materials, Inc. Substrate support pedestal having plasma confinement features
US10269566B2 (en) 2016-04-29 2019-04-23 Lam Research Corporation Etching substrates using ale and selective deposition
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) * 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
GB201609119D0 (en) * 2016-05-24 2016-07-06 Spts Technologies Ltd A method of cleaning a plasma processing module
US10662527B2 (en) 2016-06-01 2020-05-26 Asm Ip Holding B.V. Manifolds for uniform vapor deposition
US9812462B1 (en) 2016-06-07 2017-11-07 Sandisk Technologies Llc Memory hole size variation in a 3D stacked memory
JP6792786B2 (ja) 2016-06-20 2020-12-02 東京エレクトロン株式会社 ガス混合装置および基板処理装置
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US9978768B2 (en) 2016-06-29 2018-05-22 Sandisk Technologies Llc Method of making three-dimensional semiconductor memory device having laterally undulating memory films
US20180025900A1 (en) * 2016-07-22 2018-01-25 Applied Materials, Inc. Alkali metal and alkali earth metal reduction
US10083961B2 (en) 2016-09-07 2018-09-25 International Business Machines Corporation Gate cut with integrated etch stop layer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
JP2018046185A (ja) 2016-09-15 2018-03-22 東京エレクトロン株式会社 酸化シリコン及び窒化シリコンを互いに選択的にエッチングする方法
WO2018052477A2 (en) 2016-09-15 2018-03-22 Applied Materials, Inc. An integrated method for wafer outgassing reduction
US20180080124A1 (en) 2016-09-19 2018-03-22 Applied Materials, Inc. Methods and systems for thermal ale and ald
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10062585B2 (en) * 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US9960068B1 (en) 2016-12-02 2018-05-01 Lam Research Corporation Moment cancelling pad raising mechanism in wafer positioning pedestal for semiconductor processing
JP6731549B2 (ja) 2016-10-28 2020-07-29 シグニファイ ホールディング ビー ヴィＳｉｇｎｉｆｙ Ｈｏｌｄｉｎｇ Ｂ．Ｖ． 照明のモニタリング
KR102633031B1 (ko) 2016-11-04 2024-02-05 에스케이하이닉스 주식회사 반도체 메모리 소자
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10164042B2 (en) 2016-11-29 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10141328B2 (en) 2016-12-15 2018-11-27 Macronix International Co., Ltd. Three dimensional memory device and method for fabricating the same
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10692880B2 (en) 2016-12-27 2020-06-23 Applied Materials, Inc. 3D NAND high aspect ratio structure etch
US10123065B2 (en) 2016-12-30 2018-11-06 Mora Global, Inc. Digital video file generation
US9960045B1 (en) 2017-02-02 2018-05-01 Applied Materials, Inc. Charge-trap layer separation and word-line isolation for enhanced 3-D NAND structure
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US9779956B1 (en) 2017-02-06 2017-10-03 Lam Research Corporation Hydrogen activated atomic layer etching
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10208383B2 (en) 2017-02-09 2019-02-19 The Regents Of The University Of Colorado, A Body Corporate Atomic layer etching processes using sequential, self-limiting thermal reactions comprising oxidation and fluorination
US20180261686A1 (en) 2017-03-13 2018-09-13 Applied Materials, Inc. Transistor sidewall formation process
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
JP7176860B6 (ja) * 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276559B2 (en) * 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
JP6906377B2 (ja) 2017-06-23 2021-07-21 東京エレクトロン株式会社 排気プレート及びプラズマ処理装置
US10727080B2 (en) * 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) * 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US11049719B2 (en) 2017-08-30 2021-06-29 Applied Materials, Inc. Epitaxy system integrated with high selectivity oxide removal and high temperature contaminant removal
JP6883495B2 (ja) 2017-09-04 2021-06-09 東京エレクトロン株式会社 エッチング方法
US10964512B2 (en) * 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) * 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US20190323127A1 (en) * 2018-04-19 2019-10-24 Applied Materials, Inc. Texturing and plating nickel on aluminum process chamber components
US11721527B2 (en) * 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US11710630B2 (en) * 2020-04-23 2023-07-25 Applied Materials, Inc. Plasma block with integrated cooling
US20230005765A1 (en) * 2021-07-02 2023-01-05 Applied Materials, Inc. Semiconductor processing chamber adapter

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