CN109417028B - 使用材料改性及rf脉冲的选择性蚀刻 - Google Patents

使用材料改性及rf脉冲的选择性蚀刻 Download PDF

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CN109417028B
CN109417028B CN201780039924.4A CN201780039924A CN109417028B CN 109417028 B CN109417028 B CN 109417028B CN 201780039924 A CN201780039924 A CN 201780039924A CN 109417028 B CN109417028 B CN 109417028B
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semiconductor substrate
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巴尔加夫·西特拉
殷正操
斯里尼瓦斯·内曼尼
维亚斯拉夫·巴比扬
迈克尔·斯托厄尔
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Abstract

半导体系统及方法可包括执行选择性蚀刻的方法，所述方法包括以下步骤：使半导体基板上的材料改性。该半导体基板可在该半导体基板的表面上具有至少两种暴露的材料。所述方法可包括以下步骤：在容纳该半导体基板的处理腔室內形成低功率等离子体。该低功率等离子体可为射频(“RF”)等离子体，该射频等离子体在实施方式中可至少部分地由RF偏压电源所形成，该RF偏压电源在约10W及约100W之间运作。该RF偏压电源亦可用低于约5,000Hz的一频率发出脉冲。这些方法亦可包括以下步骤：相较于该半导体基板的该表面上的所述至少两种暴露的材料中的第二种材料以更高的蚀刻速率蚀刻该半导体基板的该表面上的所述至少两种暴露的材料中的一种暴露的材料。

Description

使用材料改性及RF脉冲的选择性蚀刻
技术领域
本技术涉及用于处理半导体材料的系统及方法。更具体而言，本技术涉及用于产生低功率等离子体的半导体材料改性及硬件改性。
背景技术
可能由在基板表面上产生错综复杂地图案化的材料层的工艺来制作集成电路。在基板上产生经图案化的材料的步骤需要用于施用及移除材料的受控方法。对于移除而言，化学蚀刻用于各种用途，包括将光刻胶中的图样转移进下层的层、使层薄化或已经存在于表面上的的特征侧向尺度薄化。通常想要拥有一种蚀刻一种材料比另一材料蚀刻得更快的蚀刻工艺，例如此举促进图样转移工艺。这类蚀刻工艺被称为对于第一材料是有选择性的。材料、电路及工艺的多样性的结果是，已研发了对于各种材料具有选择性的蚀刻工艺。
可基于工艺中所使用的材料而将蚀刻工艺称为是湿式或干式。湿式HF蚀刻相较于其他介电质及材料而言优先移除氧化硅。然而，湿式工艺可能在穿透某些受限的沟道时有困难，且亦可能有时使其余材料变形。在基板处理区域内所形成的局部等离子体中所产生的干式蚀刻可穿透更加受限的沟道且展现了精巧的其余结构较少的变形。然而，局部的等离子体可能在它们放电时经由产生电弧而损伤基板。此外，等离子体流出物可能损伤可能需要替换或处理的腔室部件。
因此，存在着对于可用以产生高品质设备及结构的改良的系统及方法的需要。本技术解决这些及其他的需要。
发明内容
半导体系统及方法可包括执行选择性蚀刻的方法，所述方法包括以下步骤：使半导体基板上的材料改性。该基板可在该半导体基板的表面上具有至少两种暴露的材料。所述方法可包括以下步骤：在容纳该半导体基板的处理腔室内形成低功率等离子体。该低功率等离子体可为射频(“RF”)等离子体，该射频等离子体在实施方式中可至少部分地由RF偏压电源所形成，该RF偏压电源在约10W及约100W之间运作。该RF偏压电源亦可使用低于约5,000Hz的频率发出脉冲。所述方法亦可包括以下步骤：以高于该半导体基板的该表面上的所述至少两种暴露的材料中的第二种材料的蚀刻速率蚀刻该半导体基板的该表面上的所述至少两种暴露的材料中的一种暴露的材料。
在实施方式中，该改性操作可包括以该RF偏压电源从该处理腔室内的前驱物形成等离子体。在实施方式中，该前驱物可选自由以下所组成的群组：氧、氢或氦。此外，该半导体基板的该表面上的所述至少两种暴露的材料中的各者可选自由以下所组成的群组：氧化硅、氮化硅、碳化硅及碳氧化硅。
对于蚀刻操作而言，该RF偏压电源可至少部分地形成该低功率等离子体且低于约50％的工作周期下运作。并且，形成该低功率等离子体的步骤可进一步包括利用低于约100W的RF源功率。在实施方式中，形成该低功率等离子体的步骤亦可包括利用脉冲式DC功率。该脉冲式DC功率可施用于支撑该半导体基板的双极静电夹具。在实施方式中，该脉冲式DC电源可施用于导电环，该导电环嵌入在支撑该半导体基板的托架的屏蔽环中或与该处理腔室内的喷头耦合。
本技术亦包括了从半导体基板移除材料的方法。所述方法可包括以下步骤：使半导体基板上的材料改性，该半导体基板在该半导体基板的表面上具有至少两种暴露的材料。该改性步骤可包括：用RF偏压电源从前驱物形成等离子体以生成使该材料改性的等离子体流出物。所述方法亦可包括以下步骤：在容纳该半导体基板的处理腔室内形成低功率等离子体。该低功率等离子体在实施方式中可为射频(RF)等离子体。该低功率等离子体可由脉冲式RF偏压电源来形成，该脉冲式RF偏压电源在约500Hz及约2,000Hz之间的脉冲频率下在约20W及50W之间下运作。该脉冲式RF偏压电源亦可在约20％及50％之间的工作周期下运作。所述方法可包括以下步骤：与该RF偏压电源脉冲在交流频率上操作DC脉冲式电源。所述方法可进一步包括以下步骤：相对于该半导体基板的该表面上的所述至少两种暴露的材料中的第二种材料，以至少约20:1的选择性蚀刻该半导体基板的该表面上的所述至少两种暴露的材料中的一种暴露的材料。
在所述方法中，该改性操作包括化学改性，该化学改性对该半导体基板上的该材料造成化学变化。该改性步骤亦可包括利用惰性前驱物的物理改性。在实施方式中，该物理改性可包括以该惰性前驱物的离子损伤该半导体基板上的该材料的键结。形成该低功率等离子体的该操作可进一步包括利用多达约100W运作的RF源功率。
本技术亦包括了基板处理腔室，所述基板处理腔室包括被配置为支撑半导体基板的托架。所述腔室可包括RF偏压电源，该RF偏压电源与该托架电耦合且被配置为在实施方式中以约20W及约50W之间的功率在该处理腔室内生成等离子体。该RF偏压电源可为被配置为使用低于约5,000Hz的频率发出脉冲的脉冲电源。所述基板处理腔室可进一步包括：DC脉冲电源，与该基板处理腔室电耦合，且被配置为产生用于该RF偏压等离子体的引火粒子(priming particles)。此外，该DC脉冲电源供应器可被配置为在不发展等离子体鞘的情况下以一频率发出脉冲以产生引火粒子。
在实施方式中，该DC脉冲电源供应器可被配置为在小于约50％的工作周期下启动脉冲100微秒或更少的持续时间。此外，在实施方式中，该托架可为双极静电夹具，且该DC脉冲电源可施用于该双极静电夹具的电接地。在实施方式中，该DC脉冲电源可与导电环电耦合，该导电环与该托架耦接，且该导电环可与该静电夹具及该RF偏压电解耦。在实施方式中，该DC脉冲电源亦可与导电环电耦合，该导电环嵌入在该基板处理腔室内的喷头中。
此类技术相对于传统的技术可提供许多益处。例如，该技术例如可由于材料改性而允许改良的蚀刻操作选择性。此外，本技术的低功率等离子体相对于传统的技术可产生改良的特征轮廓，且允许在使用强化的等离子体控制的情况下进行改良的前端及后端处理。与以下说明及随附图式结合来更详细地描述这些及其他实施方式以及许多它们的优点及特征。
附图说明
可通过参照本说明书的其余部分及附图来实现所公开的实施方式的本质及优点的进一步了解。
图1图示依据本技术的实施方式来蚀刻基板的方法。
图2示出一图表，该图表图示依据本技术的实施方式的材料改性及低功率等离子体的累加效应。
图3图示依据本技术的实施方式来执行的蚀刻工艺的图像。
图4图示一图表，该图表图示在使用及不使用依据本技术的实施方式的处理的情况下的各种材料的蚀刻速率。
图5图示一图表，该图表图示在使用及不使用依据本技术的实施方式的处理的情况下的碳氧化硅及碳化硅的蚀刻速率。
图6示出依据本技术的实施方式向静电夹具提供DC脉冲的控制器的部分示意说明。
图7示出依据本技术的实施方式向导体提供DC脉冲的控制器的部分示意说明，该导体与处理腔室内的托架结构耦接。
图8图示依据本技术的实施方式之向导体提供DC脉冲之控制器的部分示意说明，该导体与处理腔室的喷头耦接。
在所附的图式中，类似的部件和/或特征可具有相同的数字参考标号。进一步地，可通过在参考标示之后加上字母来区分相同类型的各种元件，该字母在类似的元件和/或特征之中进行区分。若在本说明书中仅使用第一数字参考标号，则该说明适用于具有相同第一数字参考标号的类似部件和/或特征中的任何一者而不论字母字尾。
具体实施方式
在半导体处理中，可基于许多理由而执行蚀刻。在干式蚀刻中，前驱物可流过等离子体而产生用于蚀刻各种半导体材料的自由基等离子体流出物。等离子体流出物包含了被导向待蚀刻的基板表面及材料的离子。在某些蚀刻操作中，例如在使用反应性离子蚀刻法的情况下，离子被导向材料表面，且基于所涉及的能量可从基板表面溅散材料。带有相较于第二材料更快地移除一种材料的目标而设计了其他的蚀刻操作，通常称为选择性蚀刻。为了强化选择性，一个方法可包括以下步骤：减少蚀刻操作的溅散成分。这可部分地通过减少等离子体功率以致减少电子温度来达成。选择性可能随着特征尺寸减少而变得越来越关键。选择性越高，意欲维持的可形成为缓冲剂的材料越少地用于最终产品的目标尺度。甚至随着尺寸持续减少而传统较高的选择性可能是不适合的。例如，即使从意欲维持的材料移除数纳米，设备效能亦可能被负面影响。
可以许多方式产生等离子体，例如包括使用电连接至支撑基板之托架的射频(“RF”)偏压。此偏压电源可与跟腔室的部分耦接的RF源结合使用或替代该RF源，或者可与电感耦合的等离子体源、电容耦合的等离子体源、微波源或可额外地用以产生等离子体流出物的任何其他等离子体源结合工作。藉由替代或附加于源功率而利用偏压电源，可向离子提供方向性以提供更多的各向异性(anisotropic)的或取决于定向的蚀刻。然而，随着离子能量增加，溅散亦可能增加。因为溅散可能是更独立于材料的，这可能减少材料之间的选择性，在这些材料中只有一种材料是要被移除的。据此，目标可能是减少偏压方的等离子体功率以试图改善选择性而减少溅散。
传统的技术可减少来源或偏压处的等离子体功率，但从使等离子体放电的观点来看以及在产生蚀刻时，这些传统技术皆在可减少偏压功率的程度上是受限的。为了使等离子体放电，功率必须超过等离子体所从以产生的流体的击穿电压(breakdown voltage)。对于传统的溅散及脉冲式蚀刻操作而言，辉光放电通常例如产生在低电流、中电压工作状态的500V周围及数千瓦特的功率处。然而，这些功率级(power level)将提供增加的离子能量及伴生的材料溅散，这可能导致较低的选择性。若降低等离子体功率以进一步减少溅散，则可能根本难以产生或维持等离子体，特别是在使用脉冲式等离子体功率的情况下。此外，若偏压功率被减少太多，则虽然可解决溅散，整体的蚀刻可能被减少至零。
本技术通过产生脉冲式的低功率RF等离子体而克服了许多这些问题。可在高达数百瓦特的源功率下及在百万赫兹范围中的脉冲频率下产生传统的所谓的低功率等离子体。这些功率范围不能够产生本技术的选择性，因为这些等离子体的溅散成分仍太明显。另一方面来说，本技术可在使用低于100瓦特运作的脉冲式RF偏压的情况下在各种腔室条件下、在低达约20％的工作周期下及在低达约500Hz的脉冲频率下产生等离子体。在此运作工作状态下，可减少或实质消除溅散，且可产生可能相较于传统技术高达一个数量级改良的蚀刻选择性。本技术可涉及经由材料改性来强化选择性及执行低功率蚀刻的组合。这些工艺可通过以如下两种方式来减少意欲维持的材料的量来强化整体选择性：减少与其他材料相关的蚀刻量以及减少可能负面地溅散或影响材料的任何等离子体效应。
虽然以下说明将例行地识别蚀刻操作，可以理解的是，本技术可被更广泛地应用。这些系统及操作方法可被额外应用于沉积、清洁或可能受益于所述的低功率等离子体的任何其他等离子体操作。据此，本说明书非旨在将应用仅限制在本说明书各处所述的实例。
图1图示依据本技术的实施方式来蚀刻基板的方法100。可在所指出的方法操作之前执行可选的操作，包括图案化、薄膜形成或各种其他已知的工艺操作。该方法可包括以下步骤：在操作110处使半导体基板上的材料改性。基板可在半导体基板的表面上具有至少两种暴露的材料，且可具有三种、四种、五种、六种或更多种不同的暴露的材料。此外，一或多种材料可在选择性蚀刻方法100之前一开始被覆盖，但接着被操作暴露，且因此暴露的薄膜中的一或多者可在实施方式中的蚀刻操作期间被暴露。在实施方式中，可试图移除这些材料中的一或多种。
该方法亦可包括以下步骤：在操作120处在容纳半导体基板的处理腔室内形成低功率等离子体。低功率等离子体在实施方式中可为射频(“RF”)等离子体，然而亦可类似地包括其他的等离子体形成。低功率等离子体在实施方式中可通过在约10W及100W之间下运作的RF偏压电源来至少部分地形成。在实施方式中，RF偏压电源可为脉冲式的，且可在低于约5,000Hz的脉冲频率下运作。该方法可进一步包括以下步骤：在操作130处蚀刻半导体基板表面上的所述至少两个暴露的材料中的一或多种。在实施方式中，蚀刻所述至少两个暴露的材料中的一或多种的步骤可以相较于半导体基板表面上的所述至少两个暴露的材料中的第二种材料处于更高的速率。
改性操作可基于基板表面上的材料以任何数量的方式调谐，且可基于材料性质的识别及这些材料与基板表面上的其他材料是如何地不同。例如，改性操作一开始可识别密度、化学结构、反应本性上的差异或薄膜之间可利用的任何其他特征。可执行一或多种材料的改性以强化或产生薄膜之间可在蚀刻操作中利用的差异。可在实施方式中通过将材料暴露于一或多种前驱物来执行改性。在实施方式中，前驱物可在或可不在与暴露的材料交互作用之前被激发。在实施方式中，改性步骤可包括从处理腔室内的前驱物形成等离子体。取决于被改性的薄膜，等离子体可在约50W到约300W之间。例如，展现较高密度的薄膜在实施方式中可受益于较高的等离子体功率。可在实施方式中用源功率或偏压电源以及两者的组合来产生等离子体，以产生使暴露的材料中的一或多者改性的等离子体流出物。在实施方式中，可以用RF偏压电源形成等离子体。
操作中所利用的前驱物可基于所执行改性的类型而包括一或多种前驱物。前驱物可包括要以一个形式或另一形式与材料反应的一或多种前驱物，或可包括要在物理上变更暴露的材料中的一或多种的一或多种前驱物。亦可在实施方式中利用具有这些效果中的任一者或两者的前驱物组合。在实例中，前驱物可选自包括贵重或惰性元素的元素群组，惰性元素诸如氦、氖、氩、氪、氙及氡。在实施方式中，前驱物亦可选自卤素，包括氟、氯、溴、碘及砹。前驱物亦可选自包括氧的硫族元素，以及包括氢的各种其他反应性及非反应性的前驱物，举例而言。
如上所述，改性操作可包括化学改性或物理改性中的任一者或两者。化学改性可对于半导体基板上的材料中的一或多种造成化学变化。化学变化可包括反应，例如在实施方式中产生材料层的氧化物。化学变化亦可调整材料的键结结构，或可在化学上变更材料的原子或分子，例如，通过移除电子。化学改性亦可涉及致密化相对于待移除的额外材料意欲维持在基板表面上的材料或薄膜。可以用不与基板上的暴露的材料反应的惰性前驱物执行物理改性。例如，物理改性可涉及用惰性前驱物的离子损伤半导体基板上的材料中的一或多种的键结。可以理解的是，改性可涉及化学及物理改性的组合，且所利用的个别前驱物可使得一定量的物理改性及化学改性两者发生。
半导体基板的表面上的材料可包括各种半导体处理中所使用的各种材料。这些材料可包括包含半导体处理中所一般理解的许多元素中的任何元素的金属、介电质、蚀刻停止层及基板材料。例如，这些材料可包括金属，诸如：铜、钨、钛；或其他金属；或含金属的层。这些材料亦可包括含硅的材料，诸如：氧化硅、氮化硅、多晶硅、碳化硅、碳氧化硅、碳氮化硅；或基于其他半导体基体材料的材料，例如镓。
在实施方式中，蚀刻操作中所利用的低功率等离子体可至少部分地产生自与托架电耦合的RF偏压电源，基板被支撑在该托架上。偏压电源在实施方式中可在从约1W到约500W的功率下运作。在实施方式中，偏压电源亦可在从约10瓦特到约250瓦特、从约15瓦特到约200瓦特、从约20瓦特到约150瓦特、从约20瓦特到约100瓦特或从约20瓦特到约50瓦特下运作。偏压电源可运作在此范围中，该范围可提供减少溅散的益处，同时仍使等离子体放电及产生蚀刻结果。例如，随着功率级增加，溅散亦可能由于增加的离子能量而增加，且因此在实施方式中可将功率级维持在约100瓦特以下。另一方面来说，可在实施方式中将功率级维持在约20瓦特以上，因为此临界值以下的功率级可能降低蚀刻能力或减少用以使等离子体放电的能力。这些参数亦可在一定程度上取决于腔室条件，腔室条件包括压力及温度，但仍可在利用下文更详细讨论的技术的脉冲条件下产生稳定的等离子体。
RF偏压电源可在低的工作周期及脉冲频率下运作，以产生低功率等离子体。工作周期在实施方式中可低于约75％，且在实施方式中可低于约70％、低于约65％、低于约60％、低于约55％、低于约50％、低于约45％、低于约40％、低于约35％、低于约30％、低于约25％、低于约20％、低于约15％或低于约10％。基于维持较低的离子能量同时仍有足够的导通时间来产生稳定等离子体的类似理由，RF偏压脉冲工作周期在实施方式中亦可以约10％及约60％之间或约20％及50％之间的工作周期来运作。
用于RF偏压的脉冲频率在实施方式中可低于约10kHz。用于RF偏压的脉冲频率在实施方式中亦可低于约9,000Hz、低于约8,000Hz、低于约7,000Hz、低于约6,000Hz、低于约5,000Hz、低于约4,500Hz、低于约4,000Hz、低于约3,500Hz、低于约3,000Hz、低于约2,500Hz、低于约2,000Hz、低于约1,500Hz、低于约1,000Hz、低于约750Hz或低于约500Hz。脉冲频率亦可在实施方式中被维持在约500Hz及约5,000Hz之间或在实施方式中被维持在约500Hz及约2,000Hz之间。偏压脉冲的频率可影响等离子体前驱物的解离作用，且因此通过调整频率，可调整解离作用。
除了RF偏压电源以外，可在实施方式中使用RF源功率。RF源功率可以最多约1,000W或更少的功率用在蚀刻操作中，且在实施方式中可以最多约500W或最多约100W的功率运作。RF源功率在实施方式中可在低于约100W下运作，且在实施方式中可在约0W及100W之间运作。不同的前驱物可受益于RF源的添加，而其他的前驱物可受益于RF源功率的缺乏。例如，RF源可增加聚合物的解离作用，因此对于例如包括C4F8及C4F6的某些前驱物而言，源功率可解离聚合物且将碳材料沉积在基板上而阻碍了蚀刻操作。据此，使用低的RF源或不使用RF源在某些实施方式中可改良蚀刻。在实施方式中，可取决于受蚀刻的薄膜的类型而在蚀刻操作中利用各种前驱物。可使用的示例性前驱物包括C4F8、C4F6、CF4、Cl2、CH2F2、O2、N2以及可提供用以移除目标材料的蚀刻剂特征的任何其他前驱物。
先前所讨论的RF偏压条件在实施方式中可能带来控制等离子体鞘或维持鞘的均质性的困难。然而，这些条件可在蚀刻工艺期间协助最小化溅散。据此，本技术进一步试图获得在可不受磁性元件或相关联的元件协助的情况下在低功率下运作等离子体上的控制。因为针对特定的工艺调整了压力及运作条件，等离子体在这些条件下可能更难以放电。等离子体生成或气体放电可能部分取决于引火粒子或产生带电粒子作为用以击穿的前驱物的步骤。这些带电粒子被产生来加速放电，这可减少所需的点火电压。在例如先前所讨论的脉冲功率运作期间，包括用以产生引火粒子及将电子维持在等离子体反馈回路中的额外能量源可协助在各种工艺条件期间在低功率下控制等离子体生成。通过提供额外的能量源，等离子体可接着在例如为如上所述的那些功率位准的低的功率级下或较正常功率级更低的功率级下放电。本技术在实施方式中提供了额外的能量源以将高能粒子传回进等离子体引火回路。
各种额外的能量源可用在本技术中，且在一个实例中可包括脉冲式DC电源。脉冲式DC电源可连接至腔室中的各种位置以帮助在用RF偏压电源使低功率等离子体放电之前将等离子体引火。然而，此脉冲式DC电源基本上与传统的DC偏压是不同的。在某些传统的处理中，DC偏压被施用在系统中，包括用作托架上的偏压。在施用DC脉冲时，等离子体将从主体一路形成，且将维持足够长的时间以供将电流容纳在托架处的等离子体鞘中。据此，其将向下崩陷至托架的表面而产生具有某个DC电势量的鞘。此等离子体鞘及电势产生了用于工艺的离子能量，且将由于与DC等离子体相关联的高离子能量而在阴极表面处产生材料溅散。然而，本技术可在形成等离子体鞘之前循环DC脉冲。
在本技术的实施方式中，可起动脉冲式DC电势以将等离子体引火，且接着结束循环以防止在基板表面处形成高电压DC等离子体鞘。因此，传统的DC偏压维持脉冲足够长的时间以发展鞘，这样处于高电压下的且影响了离子的能量。本技术可利用脉冲式DC电源来产生引火粒子以允许低的RF功率在该低的RF功率每次发动脉冲时点燃等离子体。相较于将在高电压DC等离子体鞘中所产生的离子能量，例如由传统的DC偏压所产生的的离子能量，可能在一般击穿电压以下的低的RF功率提供了更低的离子能量。尽管RF偏压的功率是低的，本技术的脉冲式DC电源反而产生了在RF偏压启动循环时允许突增击穿及鞘的发展的引火粒子。结果是较低离子能量下的等离子体鞘，这可相对于传统技术减少或实质减少溅散。通过减少溅散，可如先前所解释地提供较高的选择性。
为了产生脉冲式DC电源的机能，脉冲式DC电源的工作周期可为非常低的，且在实施方式中可与1微秒到约100微秒的导通时间相关联。在实施方式中，导通时间可小于约75微秒、小于约50微秒、小于约30微秒、小于约25微秒、小于约20微秒、小于约15微秒、小于约10微秒、小于约5微秒或小于约1微秒。
在工作周期的意义上，虽然传统的DC偏压可能包括50％以上、75％以上或90％以上的工作周期以产生等离子体鞘，本技术在实施方式中可利用脉冲式DC电源小于约50％的工作周期。脉冲式DC电源的工作周期在实施方式中亦可小于约40％、小于约30％、小于约25％、小于约20％、小于约15％、小于约10％、小于约5％或小于约1％。DC功率亦可在约1％及约50％之间、约1％及约25％之间、约1％及约10％之间或这些值之间或内的任何其他范围的工作周期下发出脉冲。
脉冲式DC电源亦可与RF偏压脉冲在交流或半交流的频率上运作。例如，脉冲式DC电源的频率可使其在RF偏压处于关闭循环的同时处于导通循环，反之亦然。取决于两个电源的工作周期，两个电源中的任一者可在给定的时间运作，或两个电源都可不在给定的时间运作。在实施方式中，两者亦皆可在给定的时间运作。通过利用本技术的减少的工作周期，等离子体鞘可在脉冲式DC电源运作的同时不形成于基板表面处。因此，脉冲式DC电源维持了可用于放电击穿及用以稳定化阻抗以改良系统运作条件的引火粒子，同时不形成鞘或击穿直到RF电源启动循环为止。以此方式，本技术可适应各种压力范围，包括低于约50毫托的压力工作状态以及高达数百毫托或以上的压力工作状态。换言之，本技术控制用于辉光放电击穿的阻抗以移除传统的配置、定向、压力、化学作用等等的阻抗限制。
于下文与其他图式关联而进一步描述的脉冲式DC电源可以许多种方式与系统耦接。例如，且如下文所详细描述的，可将脉冲式DC电源施用于支撑半导体基板的双极静电夹具。此外，可将脉冲式DC电源施用于嵌入在支撑半导体基板的托架的屏蔽环中或与该屏蔽环耦接的导电环。又进一步地，可将脉冲式DC电源施用于嵌入在处理腔室内的喷头中或与该喷头连接的导电环。
参照图2，图2图示一图表，该图表示出依据本技术的实施方式的材料改性及低功率等离子体的累加效应。如所图示的，示例性工艺可包括相对于基板表面上的碳化物薄膜移除氧化物薄膜。如由第一个柱形所示，反应性离子蚀刻法或连续的波形工艺可针对氧化物材料相对于碳化物材料提供低于10:1的选择性。这可能部分地是由于由离子工艺所造成的溅散，该溅散对于所有材料是更具有攻击性的而由此增加了两者的蚀刻速率。并且，反应性离子蚀刻亦可能在蚀刻轮廓中产生圆角，且一旦所需的薄膜已被移除，反应性离子蚀刻亦可能由于离子轰击而蚀刻到下层。据此，反应性离子蚀刻对于选择性处理及维持基板的特征而言不是令人满意的。
如第二个柱形中所示，通过仅利用上述的脉冲式低功率RF偏压等离子体，例如与脉冲式DC电源一起利用，可相对于传统的反应性离子蚀刻工艺改良选择性。该工艺亦可减少或消除由反应性离子蚀刻法所产生的圆角化及下层的层的蚀刻。然而，第三个柱形图示在执行低功率脉冲之前执行材料改性的有协同(synergistic)作用的益处。通过利用两种薄膜改性以及低功率等离子体RF脉冲工艺，选择性相对于反应性离子蚀刻工艺增加了几乎一个数量级。此外，在减少圆角化及下层的层的蚀刻的情况下，蚀刻轮廓被更加改良了。
图3图示依据本技术的实施方式来执行的蚀刻工艺的图像。如左方图像中所示，氮化硅区域305安置在碳化硅区域310之间。在执行如先前所讨论的材料改性及低功率RF蚀刻操作之后，碳化硅区段被移除了，如右方图式中所绘示。实质上维持了氮化硅层305，且仅可观察到最小限度的圆角化。此外，在碳化硅区段310下层的氧化硅层315在蚀刻工艺期间被暴露，但该薄膜能够充当工艺的蚀刻停止物，与由于氧化硅的轰击而会蚀刻进入沟道的反应性离子工艺相反。量测到的效果说明，本技术能够在最小限度地圆角化氮化硅的情况下产生超过50:1的碳化硅对氮化硅的蚀刻选择性。本技术亦能够产生超过70:1的碳化硅对氧化硅的蚀刻选择性。
图4图示一图表，该图表绘示在使用及不使用依据本技术的实施方式的处理的情况下的各种材料的蚀刻速率。本实例图示了在等离子体中利用氧前驱物的材料改性，以使基板表面上暴露的的碳氧化硅、氧化硅、碳化硅及氮化硅改性。在使用及不使用该氧处理的情况下在类似的材料上执行低功率脉冲式RF蚀刻工艺。如所图示的，在不使用材料改性的情况下在低功率蚀刻制程期间以低选择性蚀刻所有四个薄膜。另一方面来说，在氧处理之后，碳氧化硅及碳化硅持续蚀刻，同时氧化硅及氮化硅薄膜被向那些薄膜提供表面强化的氧处理实质维持住及缓冲了。
图5图示一图表，该图表图示在使用及不使用依据本技术的实施方式的处理的情况下的碳氧化硅及碳化硅的蚀刻速率。虽然在图4中所绘示的实例中对含碳的薄膜所执行的氧改性相对于氧化硅及氮化硅而言是成功的，两个含碳的薄膜相对于彼此并不具高的选择性。在图5中，执行了利用碳氧化硅薄膜的较高多孔性的物理改性。碳氧化硅相较于碳化硅而言是更加多孔的薄膜，且化学键结亦是较弱的。此示例的物理改性包括了在等离子体中利用氦前驱物，且接着将薄膜暴露于那些等离子体流出物。虽然氦离子的冲击具有充足的损伤碳氧化硅的化学键的能力，但因为氦对于两个薄膜而言是惰性的，其在化学上并不与材料反应。这进一步弱化了薄膜，在这之后执行低功率RF脉冲蚀刻。如由图式所绘示，在改性之后进行低功率蚀刻移除了碳氧化硅材料同时实质上维持了碳化硅。
由图4及5所图示的实例仅为示例性的，且不是要限制本技术。这些实例仅示出由本技术所包括的材料改性的类型。技术人员将由这些实例容易地理解可如何将材料改性及低功率蚀刻操作应用于各种材料来强化选择性且改良蚀刻轮廓。通过利用本技术，可针对碳氧化硅相对于氧化硅及氮化硅达成大于20:1的选择性。亦可使用依据本技术的各种材料改性及蚀刻来针对氧化硅相对于碳氧化硅、氮化硅及碳化硅达成大于20:1的选择性。亦可使用依据本技术的各种材料改性及蚀刻来针对碳化硅相对于氧化硅、氮化硅及碳氧化硅达成大于20:1的选择性。此外，可使用依据本技术的各种材料改性及蚀刻来针对氮化硅相对于氧化硅、碳氧化硅及碳化硅达成大于20:1的选择性。在实施方式中，任何这些操作的选择性亦可大于或约为25:1、大于或约为30:1、大于或约为35:1、大于或约为40:1、大于或约为45:1、大于或约为50:1、大于或约为55:1、大于或约为60:1、大于或约为65:1、大于或约为70:1、大于或约为75:1、大于或约为80:1、大于或约为85:1、大于或约为90:1、大于或约为95:1、或大于或约为100:1。
参照图6，图6示出依据本技术的实施方式向静电夹具提供DC脉冲的控制器的部分示意说明。该系统可与依据本技术的实施方式的基板处理腔室一起被包括。示例性腔室可为由加州圣克拉拉市的应用材料公司所生产的MesaTM蚀刻系统。部件可包括被配置为支撑半导体基板的托架605。该系统亦可包括与托架电耦合且被配置为如先前所述的产生等离子体的脉冲式RF偏压电源610。脉冲式RF偏压电源610可被配置为以约20W及约50W之间的功率在处理腔室内产生等离子体，且脉冲式RF偏压电源可在低于约5,000Hz的频率下发出脉冲。该系统亦可被配置为在先前所述的任何其他的水平下运作。
该系统亦可包括与基板处理腔室电耦合的DC脉冲电源615。DC脉冲电源615可如先前所述的，且被配置为针对RF偏压等离子体产生引火粒子。在实施方式中，DC脉冲电源可被配置为以一定频率发出脉冲以在不发展等离子体鞘的情况下产生引火粒子。DC脉冲电源可以运作持续先前所述的时间中的任一个时间或用先前所述的工作周期中的任一个工作周期运作，且可被配置为在小于约50％的工作周期下以100微秒或更少的持续时间发出脉冲。DC脉冲电源亦可被配置为在小于约20％的工作周期下以小于约50微秒的脉冲持续期间运作。在实施方式中，DC脉冲电源亦可被配置为在小于约10％的工作周期下以小于约10微秒的脉冲持续期间运作。
如图6中所示，托架605可为静电夹具。腔室控制器620可向静电夹具控制器625提供指令，静电夹具控制器625包括用于双极静电夹具的输入/输出模组630。DC脉冲电源615可如图式中所示的与双极静电夹具630的电接地电耦合。在许多处理腔室中，电极可被偏压至DC电压，且可在DC电源的输出处包括重滤波(heavy filtering)以阻挡RF功率。从而，在电源如配置中所示地发出脉冲时，波形可开始扭曲及衰减。据此，为了克服此问题，静电夹具电源可在脉冲式DC的电压处浮动。因此，静电夹具电极接着参考了脉冲式DC的高电压。换言之，静电夹具电源可接着浮动而在电学上与机器的接地隔离，且静电夹具的接地实质上可在高电压处。静电夹具可接着相对于高电压输出正及负极性。
因此，若脉冲式DC关闭循环或接地，则静电夹具电极会以正或负的方式参考接地。然而，在DC被施用或发出脉冲时，则静电夹具电极会参考所施用的DC电源的功率。为了解释的目的而非作为特定的工艺方案，作为如此配置的非限制性实例，若脉冲式DC电源在1kV下运作，且静电夹具在+/-500伏特下运作，则在DC电源启动循环以如先前所述地协助等离子体生成时，电极会分别处于1500伏特及500伏特。此配置的益处可为，在腔室里面可能不需要用于脉冲式DC电源的额外导体。此外，在实施方式中，DC及RF脉冲可为交替的，且因此尽管DC及RF电源各偏压相同的托架基座它们亦可彼此解耦。
可与静电夹具解耦的额外耦接选项绘示于图7中，图7图示依据本技术的实施方式向与托架结构耦接的导体提供DC脉冲的控制器的部分示意说明。如图式中所图示，基板处理腔室701被图示为具有喷头703及被配置为支撑基板的托架705。该系统可包括如先前所讨论的脉冲式RF偏压710，以及用于静电夹持的DC电源715。可包括额外的DC脉冲单元720，该单元提供如先前所讨论的脉冲式DC电源以提供产生由RF偏压点燃等离子体的引火。在此实例中，DC脉冲电源与导电环725电耦合，该导电环嵌入在托架中或与该托架耦接。此导电环725在实施方式中可与静电夹具解耦及与RF偏压解耦。例如，导电环725可被包括在托架705的介电屏蔽环(包括石英屏蔽环)中，如图示。在实施方式中，导电环可为任何导电材料，包括金属或碳化硅。在此方案中，虽然因为导电环与其他电源解耦而在系统中包括了额外的导体，这些部件并不需要相对于彼此在电学上浮动。
可与静电夹具解耦的另一耦接选项绘示于图8中，图8示出依据本技术的实施方式向处理腔室的喷头内的嵌入式导体提供DC脉冲的控制器的部分示意说明。如所图示的，示出与针对图7所讨论的那些部件类似的部件，包括基板处理腔室701，该基板处理腔室包括喷头703及托架705，举例而言。该系统类似地包括脉冲式RF偏压710、用于静电夹持的DC电源715及DC脉冲单元720。图式额外包括了导电环825，该导电环可为上文所讨论的类似材料，但在实施方式中可与喷头703耦合。此耦合选项亦将脉冲式DC与其他电源解耦。
亦可在实施方式中包括与腔室壁耦接或嵌入在该腔室壁中的耦接环，或与腔室系统的其他元件耦接或嵌入在这些其他部件中的耦接环。通过以任何这些选项或如将容易地理解到类似地包括的替代选项提供脉冲式DC电源，该系统相较于传统系统可产生更低功率的等离子体。通过提供能量来产生高能粒子而允许低功率的脉冲RF偏压更容易以较低的离子能量在较低的电压下使等离子体放电，可针对蚀刻、沉积、清洁或可受益于低功率等离子体的任何其他工艺提供改良的等离子体处理。
在上述说明中，为了解释的目的，已阐述了许多细节以提供本技术的各种实施方式的了解。然而，本领域技术人员将显而易见的是，可在没有某些这些细节的情况下或在有额外的细节的情况下实行某些实施方式。
在已揭露了若干实施方式的情况下，将由本领域技术人员所辨识的是，可在不脱离实施方式的精神的情况下使用各种变型、替代构造及等效物。此外，未描述许多公知的工艺及元件以避免不必要地模糊了本技术。据此，不应将以上说明视为限制本技术的范围。
若提供了值的范围，除非上下文另有清楚指定，可以理解的是，亦具体公开了该范围的上限及下限之间的各个中间值，公开到下限的最小的单位小数。涵盖了任何经陈述的值之间的任何较窄范围或在所陈述范围中的未经陈述的中间值及该所陈述范围中的任何其他经陈述的或中间的值。可独立地在范围中包括或排除那些较小范围的上限及下限，且在较小范围中包括任一限值、不包括任何限值或包括两个限值的各个范围亦被包括在本技术内，取决于经陈述范围中的任何被具体排除的限值。若经陈述的范围包括这些限值中的一个或两个，则亦包括了排除这些所包括的限值中的任一个或两个的范围。若在列表中提供了多个值，则类似地具体公开了涵盖这些值中的任一个或基于这些值中的任一个的任何范围。
如本文中及随附权利要求中所使用的，除非上下文另有清楚指定，单数形式“一(a)”、“一(an)”及“该”包括了多个的指称。例如，因此，对于“一种材料”的指称包括了多种此类材料，且对于“该前驱物”的指称包括了对于本领域技术人员已知的一或多种前驱物及其等效物的指称等等。
并且，用字“包括(comprise)”、“包括(comprising)”、“包含(contain)”、“包含(containing)”、“包括(include)”及“包括(including)”在被用在此说明书中及以下权利要求中时，旨在指定经陈述的特征、整数、元件或操作的存在，但这些用语并不排除一或多个其他的特征、整数、元件、操作、行动或群组的存在或添加。

Claims (15)

1.一种执行选择性蚀刻的方法，所述方法包括以下步骤：
使半导体基板上的材料改性，所述半导体基板在所述半导体基板的表面上具有至少两种暴露的材料；
在容纳所述半导体基板的处理腔室内形成低功率等离子体，其中所述低功率等离子体为射频(RF)等离子体，且其中所述低功率等离子体至少部分地由RF偏压电源所形成，所述RF偏压电源在10W及100W之间下及在低于5,000Hz的脉冲频率下运作；及
相较于所述半导体基板的所述表面上的所述至少两种暴露的材料中的第二种材料以更高的速率蚀刻所述半导体基板的所述表面上的所述至少两种暴露的材料中的一种暴露的材料。
2.如权利要求1所述的方法，其中所述改性步骤包括用所述RF偏压电源从所述处理腔室内的前驱物形成等离子体。
3.如权利要求2所述的方法，其中该前驱物选自由以下所组成的群组：氧、氢或氦。
4.如权利要求1所述的方法，其中所述半导体基板的所述表面上的所述至少两种暴露的材料中的各者选自由以下所组成的群组：氧化硅、氮化硅、碳化硅及碳氧化硅。
5.如权利要求1所述的方法，其中至少部分地形成所述低功率等离子体的所述RF偏压电源在低于50％的工作周期下运作。
6.如权利要求1所述的方法，其中形成所述低功率等离子体的步骤进一步包括利用低于100W的RF源功率。
7.如权利要求1所述的方法，其中形成所述低功率等离子体的步骤进一步包括利用脉冲式DC功率。
8.如权利要求7所述的方法，其中所述脉冲式DC功率施用于支撑所述半导体基板的双极静电夹具。
9.如权利要求7所述的方法，其中所述脉冲式DC功率施用于导电环，所述导电环嵌入在支撑所述半导体基板的托架的屏蔽环中或嵌入在所述处理腔室内的喷头中。
10.一种从半导体基板移除材料的方法，所述方法包括以下步骤：
使半导体基板上的材料改性，所述半导体基板在所述半导体基板的表面上具有至少两种暴露的材料，其中所述改性步骤包括用RF偏压电源从前驱物形成等离子体以产生使所述材料改性的等离子体流出物；
在容纳所述半导体基板的处理腔室内形成低功率等离子体，其中所述低功率等离子体为射频(RF)等离子体，且其中所述低功率等离子体由脉冲式RF偏压电源所形成，所述脉冲式RF偏压电源在20％及50％之间的工作周期下在500Hz及2,000Hz之间的脉冲频率下在20W及50W之间下运作；
用所述RF偏压电源脉冲在交流频率上操作DC脉冲式功率；及
相对于所述半导体基板的所述表面上的所述至少两种暴露的材料中的第二种材料，以至少20∶1的选择性蚀刻所述半导体基板的所述表面上的所述至少两种暴露的材料中的一种暴露的材料。
11.如权利要求10所述的方法，其中所述改性步骤包括化学改性，所述化学改性对所述半导体基板上的所述材料造成化学变化。
12.如权利要求10所述的方法，其中所述改性步骤包括利用惰性前驱物的物理改性。
13.如权利要求12所述的方法，其中所述物理改性包括以所述惰性前驱物的离子损伤所述半导体基板上的所述材料的键结。
14.如权利要求10所述的方法，其中形成所述低功率等离子体的步骤进一步包括利用以多达100W运作的RF源功率。
15.一种基板处理腔室，包括：
托架，被配置为支撑半导体基板；
RF偏压电源，与所述托架电耦合，且被配置为以20W及50W之间的功率在所述处理腔室内生成等离子体，其中所述RF偏压电源为被配置为使用低于5,000Hz的频率发出脉冲的脉冲电源；及
DC脉冲电源，与所述基板处理腔室电耦合，且被配置为产生用于所述RF偏压等离子体的引火粒子，其中所述DC脉冲电源被配置为在小于50％的工作周期下启动脉冲100微秒或更少的持续时间。
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Families Citing this family (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10636675B2 (en) 2017-09-27 2020-04-28 Applied Materials, Inc. Methods of etching metal-containing layers
US10763083B2 (en) * 2017-10-06 2020-09-01 Lam Research Corporation High energy atomic layer etching
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10424487B2 (en) 2017-10-24 2019-09-24 Applied Materials, Inc. Atomic layer etching processes
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
JP6877316B2 (ja) * 2017-11-08 2021-05-26 東京エレクトロン株式会社 エッチング方法
US10741392B2 (en) * 2017-11-28 2020-08-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor structure
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
JP7025952B2 (ja) * 2018-02-16 2022-02-25 東京エレクトロン株式会社 エッチングする方法及びプラズマ処理装置
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
KR102642011B1 (ko) * 2018-03-30 2024-02-27 램 리써치 코포레이션 내화성 금속들 및 다른 고 표면 결합 에너지 재료들의 원자 층 에칭 및 평활화 (smoothing)
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10555412B2 (en) * 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11114306B2 (en) 2018-09-17 2021-09-07 Applied Materials, Inc. Methods for depositing dielectric material
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US10971357B2 (en) 2018-10-04 2021-04-06 Applied Materials, Inc. Thin film treatment process
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
JP6959999B2 (ja) * 2019-04-19 2021-11-05 株式会社日立ハイテク プラズマ処理方法
CN112509899B (zh) * 2019-09-16 2024-02-09 中微半导体设备(上海)股份有限公司 电感耦合等离子体处理装置及其点火控制方法
JP2023535388A (ja) * 2020-07-19 2023-08-17 アプライド マテリアルズ インコーポレイテッド ホウ素がドープされたシリコン材料を利用した集積プロセス
CN112216702B (zh) * 2020-10-09 2022-03-29 长江存储科技有限责任公司 一种刻蚀工艺及3d nand的制作工艺
GB202020822D0 (en) * 2020-12-31 2021-02-17 Spts Technologies Ltd Method and apparatus
US20220364230A1 (en) * 2021-05-12 2022-11-17 Applied Materials, Inc. Pulsing plasma treatment for film densification
CN118280819A (zh) * 2022-12-30 2024-07-02 江苏鲁汶仪器股份有限公司 一种刻蚀方法及刻蚀系统

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5830330A (en) * 1997-05-22 1998-11-03 Tokyo Electron Limited Method and apparatus for low pressure sputtering
US7479458B1 (en) * 2005-12-15 2009-01-20 Lam Research Corporation Methods and apparatus for the optimization of highly selective process gases
WO2011156813A1 (en) * 2010-06-11 2011-12-15 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma processing a substrate
CN103021934A (zh) * 2012-12-20 2013-04-03 中微半导体设备(上海)有限公司 一种通孔或接触孔的形成方法
CN103733317A (zh) * 2011-08-18 2014-04-16 应用材料公司 用于含硅和氮的薄膜的干式蚀刻
US8748322B1 (en) * 2013-04-16 2014-06-10 Applied Materials, Inc. Silicon oxide recess etch
JP2015207688A (ja) * 2014-04-22 2015-11-19 株式会社日立ハイテクノロジーズ ドライエッチング方法

Family Cites Families (2086)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2369620A (en) 1941-03-07 1945-02-13 Battelle Development Corp Method of coating cupreous metal with tin
US3451840A (en) 1965-10-06 1969-06-24 Us Air Force Wire coated with boron nitride and boron
US3401302A (en) 1965-11-01 1968-09-10 Humphreys Corp Induction plasma generator including cooling means, gas flow means, and operating means therefor
US3537474A (en) 1968-02-19 1970-11-03 Varian Associates Push button vacuum control valve and vacuum system using same
US3756511A (en) 1971-02-02 1973-09-04 Kogyo Kaihatsu Kenyusho Nozzle and torch for plasma jet
US3969077A (en) 1971-12-16 1976-07-13 Varian Associates Alkali metal leak detection method and apparatus
US4632857A (en) 1974-05-24 1986-12-30 Richardson Chemical Company Electrolessly plated product having a polymetallic catalytic film underlayer
US4397812A (en) 1974-05-24 1983-08-09 Richardson Chemical Company Electroless nickel polyalloys
US4232060A (en) 1979-01-22 1980-11-04 Richardson Chemical Company Method of preparing substrate surface for electroless plating and products produced thereby
US4006047A (en) 1974-07-22 1977-02-01 Amp Incorporated Catalysts for electroless deposition of metals on comparatively low-temperature polyolefin and polyester substrates
US3937857A (en) 1974-07-22 1976-02-10 Amp Incorporated Catalyst for electroless deposition of metals
US4341592A (en) 1975-08-04 1982-07-27 Texas Instruments Incorporated Method for removing photoresist layer from substrate by ozone treatment
US4190488A (en) 1978-08-21 1980-02-26 International Business Machines Corporation Etching method using noble gas halides
US4265943A (en) 1978-11-27 1981-05-05 Macdermid Incorporated Method and composition for continuous electroless copper deposition using a hypophosphite reducing agent in the presence of cobalt or nickel ions
US4234628A (en) 1978-11-28 1980-11-18 The Harshaw Chemical Company Two-step preplate system for polymeric surfaces
US4214946A (en) 1979-02-21 1980-07-29 International Business Machines Corporation Selective reactive ion etching of polysilicon against SiO2 utilizing SF6 -Cl2 -inert gas etchant
US4361441A (en) 1979-04-17 1982-11-30 Plasma Holdings N.V. Treatment of matter in low temperature plasmas
US4209357A (en) 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus
IT1130955B (it) 1980-03-11 1986-06-18 Oronzio De Nora Impianti Procedimento per la formazione di elettroci sulle superficie di membrane semipermeabili e sistemi elettrodo-membrana cosi' prodotti
US4361418A (en) 1980-05-06 1982-11-30 Risdon Corporation High vacuum processing system having improved recycle draw-down capability under high humidity ambient atmospheric conditions
NL8004005A (nl) 1980-07-11 1982-02-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US4340462A (en) 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
US4368223A (en) 1981-06-01 1983-01-11 Asahi Glass Company, Ltd. Process for preparing nickel layer
DE3205345A1 (de) 1982-02-15 1983-09-01 Philips Patentverwaltung Gmbh, 2000 Hamburg "verfahren zur herstellung von fluordotierten lichtleitfasern"
US4585920A (en) 1982-05-21 1986-04-29 Tegal Corporation Plasma reactor removable insert
JPS591671A (ja) 1982-05-28 1984-01-07 Fujitsu Ltd プラズマｃｖｄ装置
JPS59126778A (ja) 1983-01-11 1984-07-21 Tokyo Denshi Kagaku Kabushiki プラズマエツチング方法及びその装置
JPS59222922A (ja) 1983-06-01 1984-12-14 Nippon Telegr & Teleph Corp <Ntt> 気相成長装置
DE3324388A1 (de) 1983-07-06 1985-01-17 Kraftwerk Union AG, 4330 Mülheim Verfahren und anlage zur wiederaufwaermung von rauchgasen hinter einer nassen rauchgasentschwefelungsanlage
JPS6060060A (ja) 1983-09-12 1985-04-06 株式会社日立製作所 鉄道車両の扉開閉装置
US4579618A (en) 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
US4656052A (en) 1984-02-13 1987-04-07 Kyocera Corporation Process for production of high-hardness boron nitride film
US4656076A (en) 1985-04-26 1987-04-07 Triquint Semiconductors, Inc. Self-aligned recessed gate process
US4600464A (en) 1985-05-01 1986-07-15 International Business Machines Corporation Plasma etching reactor with reduced plasma potential
US4807016A (en) 1985-07-15 1989-02-21 Texas Instruments Incorporated Dry etch of phosphosilicate glass with selectivity to undoped oxide
US4610775A (en) 1985-07-26 1986-09-09 Westinghouse Electric Corp. Method and apparatus for clearing short-circuited, high-voltage cathodes in a sputtering chamber
JPS6245119A (ja) 1985-08-23 1987-02-27 Matsushita Electric Ind Co Ltd ドライエツチング装置
US4749440A (en) 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
US4668335A (en) 1985-08-30 1987-05-26 Advanced Micro Devices, Inc. Anti-corrosion treatment for patterning of metallic layers
US4690746A (en) 1986-02-24 1987-09-01 Genus, Inc. Interlayer dielectric process
US4715937A (en) 1986-05-05 1987-12-29 The Board Of Trustees Of The Leland Stanford Junior University Low-temperature direct nitridation of silicon in nitrogen plasma generated by microwave discharge
US4960488A (en) 1986-12-19 1990-10-02 Applied Materials, Inc. Reactor chamber self-cleaning process
US5000113A (en) 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US4951601A (en) 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
US5228501A (en) 1986-12-19 1993-07-20 Applied Materials, Inc. Physical vapor deposition clamping mechanism and heater/cooler
JPS63204726A (ja) 1987-02-20 1988-08-24 Anelva Corp 真空処理装置
US5322976A (en) 1987-02-24 1994-06-21 Polyonics Corporation Process for forming polyimide-metal laminates
KR910006164B1 (ko) 1987-03-18 1991-08-16 가부시키가이샤 도시바 박막형성방법과 그 장치
US4793897A (en) 1987-03-20 1988-12-27 Applied Materials, Inc. Selective thin film etch process
US4786360A (en) 1987-03-30 1988-11-22 International Business Machines Corporation Anisotropic etch process for tungsten metallurgy
US5198034A (en) 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
DE3884653T2 (de) 1987-04-03 1994-02-03 Fujitsu Ltd Verfahren und Vorrichtung zur Gasphasenabscheidung von Diamant.
US4913929A (en) 1987-04-21 1990-04-03 The Board Of Trustees Of The Leland Stanford Junior University Thermal/microwave remote plasma multiprocessing reactor and method of use
JP2598019B2 (ja) 1987-06-01 1997-04-09 富士通株式会社 感光体の製造方法
US4753898A (en) 1987-07-09 1988-06-28 Motorola, Inc. LDD CMOS process
US4857140A (en) 1987-07-16 1989-08-15 Texas Instruments Incorporated Method for etching silicon nitride
US4904621A (en) 1987-07-16 1990-02-27 Texas Instruments Incorporated Remote plasma generation process using a two-stage showerhead
US4867841A (en) 1987-07-16 1989-09-19 Texas Instruments Incorporated Method for etch of polysilicon film
US4828649A (en) 1987-07-16 1989-05-09 Texas Instruments Incorporated Method for etching an aluminum film doped with silicon
US4820377A (en) 1987-07-16 1989-04-11 Texas Instruments Incorporated Method for cleanup processing chamber and vacuum process module
JPS6432627A (en) 1987-07-29 1989-02-02 Hitachi Ltd Low-temperature dry etching method
US4919750A (en) 1987-09-14 1990-04-24 International Business Machines Corporation Etching metal films with complexing chloride plasma
US4810520A (en) 1987-09-23 1989-03-07 Magnetic Peripherals Inc. Method for controlling electroless magnetic plating
US5180435A (en) 1987-09-24 1993-01-19 Research Triangle Institute, Inc. Remote plasma enhanced CVD method and apparatus for growing an epitaxial semiconductor layer
KR930003136B1 (ko) 1987-10-14 1993-04-22 후루가와덴기 고오교오 가부시기가이샤 프라즈마 cvd에 의한 박막 형성장치
US4981551A (en) 1987-11-03 1991-01-01 North Carolina State University Dry etching of silicon carbide
US4792378A (en) 1987-12-15 1988-12-20 Texas Instruments Incorporated Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor
JP2804037B2 (ja) 1988-02-05 1998-09-24 株式会社東芝 ドライエッチング方法
JPH01297141A (ja) 1988-05-25 1989-11-30 Canon Inc マイクロ波プラズマ処理装置
US4900856A (en) 1988-05-26 1990-02-13 Ethyl Corporation Preparation of metal halide-amine complexes
JPH029115A (ja) 1988-06-28 1990-01-12 Mitsubishi Electric Corp 半導体製造装置
JPH02114525A (ja) 1988-10-24 1990-04-26 Toshiba Corp 有機化合物膜の除去方法及び除去装置
JPH02114530A (ja) 1988-10-25 1990-04-26 Mitsubishi Electric Corp 薄膜形成装置
KR930004115B1 (ko) 1988-10-31 1993-05-20 후지쓰 가부시끼가이샤 애싱(ashing)처리방법 및 장치
US5030319A (en) 1988-12-27 1991-07-09 Kabushiki Kaisha Toshiba Method of oxide etching with condensed plasma reaction product
US4985372A (en) 1989-02-17 1991-01-15 Tokyo Electron Limited Method of forming conductive layer including removal of native oxide
JP2823276B2 (ja) 1989-03-18 1998-11-11 株式会社東芝 Ｘ線マスクの製造方法および薄膜の内部応力制御装置
US4946903A (en) 1989-03-27 1990-08-07 The Research Foundation Of State University Of Ny Oxyfluoropolymers having chemically reactive surface functionality and increased surface energies
US5186718A (en) 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
US4987856A (en) 1989-05-22 1991-01-29 Advanced Semiconductor Materials America, Inc. High throughput multi station processor for multiple single wafers
US5061838A (en) 1989-06-23 1991-10-29 Massachusetts Institute Of Technology Toroidal electron cyclotron resonance reactor
US5270125A (en) 1989-07-11 1993-12-14 Redwood Microsystems, Inc. Boron nutride membrane in wafer structure
US4993358A (en) 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
US5013691A (en) 1989-07-31 1991-05-07 At&T Bell Laboratories Anisotropic deposition of silicon dioxide
US5028565A (en) 1989-08-25 1991-07-02 Applied Materials, Inc. Process for CVD deposition of tungsten layer on semiconductor wafer
US4994404A (en) 1989-08-28 1991-02-19 Motorola, Inc. Method for forming a lightly-doped drain (LDD) structure in a semiconductor device
US4980018A (en) 1989-11-14 1990-12-25 Intel Corporation Plasma etching process for refractory metal vias
EP0447155B1 (en) 1990-03-12 1995-07-26 Ngk Insulators, Ltd. Wafer heaters for use in semi-conductor-producing apparatus, heating units using such wafer heaters, and production of heaters
JP2960466B2 (ja) 1990-03-19 1999-10-06 株式会社日立製作所 半導体デバイスの配線絶縁膜の形成方法及びその装置
US5089441A (en) 1990-04-16 1992-02-18 Texas Instruments Incorporated Low-temperature in-situ dry cleaning process for semiconductor wafers
US5328810A (en) 1990-05-07 1994-07-12 Micron Technology, Inc. Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process
US5147692A (en) 1990-05-08 1992-09-15 Macdermid, Incorporated Electroless plating of nickel onto surfaces such as copper or fused tungston
US5069938A (en) 1990-06-07 1991-12-03 Applied Materials, Inc. Method of forming a corrosion-resistant protective coating on aluminum substrate
US5238499A (en) 1990-07-16 1993-08-24 Novellus Systems, Inc. Gas-based substrate protection during processing
US5083030A (en) 1990-07-18 1992-01-21 Applied Photonics Research Double-sided radiation-assisted processing apparatus
US5235139A (en) 1990-09-12 1993-08-10 Macdermid, Incorprated Method for fabricating printed circuits
US5074456A (en) 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
US5089442A (en) 1990-09-20 1992-02-18 At&T Bell Laboratories Silicon dioxide deposition method using a magnetic field and both sputter deposition and plasma-enhanced cvd
KR930011413B1 (ko) 1990-09-25 1993-12-06 가부시키가이샤 한도오따이 에네루기 겐큐쇼 펄스형 전자파를 사용한 플라즈마 cvd 법
DE69116058T2 (de) 1990-09-27 1996-08-22 At & T Corp Verfahren zur Herstellung integrierter Schaltungen
JPH04142738A (ja) 1990-10-04 1992-05-15 Sony Corp ドライエッチング方法
JPH04355917A (ja) 1990-10-12 1992-12-09 Seiko Epson Corp 半導体装置の製造装置
JPH0817171B2 (ja) 1990-12-31 1996-02-21 株式会社半導体エネルギー研究所 プラズマ発生装置およびそれを用いたエッチング方法
US5549780A (en) 1990-10-23 1996-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for plasma processing and apparatus for plasma processing
JP2640174B2 (ja) 1990-10-30 1997-08-13 三菱電機株式会社 半導体装置およびその製造方法
US5279705A (en) 1990-11-28 1994-01-18 Dainippon Screen Mfg. Co., Ltd. Gaseous process for selectively removing silicon nitride film
JP3206916B2 (ja) 1990-11-28 2001-09-10 住友電気工業株式会社 欠陥濃度低減方法、紫外線透過用光学ガラスの製造方法及び紫外線透過用光学ガラス
US5217559A (en) 1990-12-10 1993-06-08 Texas Instruments Incorporated Apparatus and method for in-situ deep ultraviolet photon-assisted semiconductor wafer processing
US5578130A (en) 1990-12-12 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Apparatus and method for depositing a film
WO1992012535A1 (en) 1991-01-08 1992-07-23 Fujitsu Limited Process for forming silicon oxide film
JP2697315B2 (ja) 1991-01-23 1998-01-14 日本電気株式会社 フッ素含有シリコン酸化膜の形成方法
JP2787142B2 (ja) 1991-03-01 1998-08-13 上村工業 株式会社 無電解錫、鉛又はそれらの合金めっき方法
DE4107006A1 (de) 1991-03-05 1992-09-10 Siemens Ag Verfahren zum anisotropen trockenaetzen von aluminium bzw. aluminiumlegierungen enthaltenden leiterbahnebenen in integrierten halbleiterschaltungen
US5897751A (en) 1991-03-11 1999-04-27 Regents Of The University Of California Method of fabricating boron containing coatings
US5330578A (en) 1991-03-12 1994-07-19 Semiconductor Energy Laboratory Co., Ltd. Plasma treatment apparatus
US5290383A (en) 1991-03-24 1994-03-01 Tokyo Electron Limited Plasma-process system with improved end-point detecting scheme
EP0539559A1 (en) 1991-04-03 1993-05-05 Eastman Kodak Company HIGH DURABILITY MASK FOR DRY ETCHING OF GaAs
EP0511448A1 (en) 1991-04-30 1992-11-04 International Business Machines Corporation Method and apparatus for in-situ and on-line monitoring of a trench formation process
JPH04341568A (ja) 1991-05-16 1992-11-27 Toshiba Corp 薄膜形成方法及び薄膜形成装置
CA2068623A1 (en) 1991-05-28 1992-11-29 David Wilson Jr. Socket and drive assembly
JP2699695B2 (ja) 1991-06-07 1998-01-19 日本電気株式会社 化学気相成長法
US5203911A (en) 1991-06-24 1993-04-20 Shipley Company Inc. Controlled electroless plating
US6074512A (en) 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US6077384A (en) 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US5279865A (en) 1991-06-28 1994-01-18 Digital Equipment Corporation High throughput interlevel dielectric gap filling process
JPH0521393A (ja) 1991-07-11 1993-01-29 Sony Corp プラズマ処理装置
JPH0562936A (ja) 1991-09-03 1993-03-12 Mitsubishi Electric Corp プラズマ処理装置およびプラズマクリーニング方法
US5240497A (en) 1991-10-08 1993-08-31 Cornell Research Foundation, Inc. Alkaline free electroless deposition
US5318668A (en) 1991-10-24 1994-06-07 Matsushita Electric Industrial Co., Ltd. Dry etching method
JPH05226480A (ja) 1991-12-04 1993-09-03 Nec Corp 半導体装置の製造方法
US5290382A (en) 1991-12-13 1994-03-01 Hughes Aircraft Company Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films
US5279669A (en) 1991-12-13 1994-01-18 International Business Machines Corporation Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions
US5352636A (en) 1992-01-16 1994-10-04 Applied Materials, Inc. In situ method for cleaning silicon surface and forming layer thereon in same chamber
US5300463A (en) 1992-03-06 1994-04-05 Micron Technology, Inc. Method of selectively etching silicon dioxide dielectric layers on semiconductor wafers
JP3084497B2 (ja) 1992-03-25 2000-09-04 東京エレクトロン株式会社 ＳｉＯ２膜のエッチング方法
JP2773530B2 (ja) 1992-04-15 1998-07-09 日本電気株式会社 半導体装置の製造方法
JP2792335B2 (ja) 1992-05-27 1998-09-03 日本電気株式会社 半導体装置の製造方法
US5274917A (en) 1992-06-08 1994-01-04 The Whitaker Corporation Method of making connector with monolithic multi-contact array
US5880036A (en) 1992-06-15 1999-03-09 Micron Technology, Inc. Method for enhancing oxide to nitride selectivity through the use of independent heat control
KR100293830B1 (ko) 1992-06-22 2001-09-17 리차드 에이치. 로브그렌 플라즈마 처리 쳄버내의 잔류물 제거를 위한 플라즈마 정결방법
US5286297A (en) 1992-06-24 1994-02-15 Texas Instruments Incorporated Multi-electrode plasma processing apparatus
US5252178A (en) 1992-06-24 1993-10-12 Texas Instruments Incorporated Multi-zone plasma processing method and apparatus
US5534072A (en) 1992-06-24 1996-07-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing subtrates
JP3688726B2 (ja) 1992-07-17 2005-08-31 株式会社東芝 半導体装置の製造方法
US5380560A (en) 1992-07-28 1995-01-10 International Business Machines Corporation Palladium sulfate solution for the selective seeding of the metal interconnections on polyimide dielectrics for electroless metal deposition
US5248371A (en) 1992-08-13 1993-09-28 General Signal Corporation Hollow-anode glow discharge apparatus
US5292370A (en) 1992-08-14 1994-03-08 Martin Marietta Energy Systems, Inc. Coupled microwave ECR and radio-frequency plasma source for plasma processing
US5271972A (en) 1992-08-17 1993-12-21 Applied Materials, Inc. Method for depositing ozone/TEOS silicon oxide films of reduced surface sensitivity
US5326427A (en) 1992-09-11 1994-07-05 Lsi Logic Corporation Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation
US5306530A (en) 1992-11-23 1994-04-26 Associated Universities, Inc. Method for producing high quality thin layer films on substrates
JP2809018B2 (ja) 1992-11-26 1998-10-08 日本電気株式会社 半導体装置およびその製造方法
US5382311A (en) 1992-12-17 1995-01-17 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
US5500249A (en) 1992-12-22 1996-03-19 Applied Materials, Inc. Uniform tungsten silicide films produced by chemical vapor deposition
US5756402A (en) 1992-12-28 1998-05-26 Kabushiki Kaisha Toshiba Method of etching silicon nitride film
US5453124A (en) 1992-12-30 1995-09-26 Texas Instruments Incorporated Programmable multizone gas injector for single-wafer semiconductor processing equipment
US5624582A (en) 1993-01-21 1997-04-29 Vlsi Technology, Inc. Optimization of dry etching through the control of helium backside pressure
US5366585A (en) 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
US5345999A (en) 1993-03-17 1994-09-13 Applied Materials, Inc. Method and apparatus for cooling semiconductor wafers
US5302233A (en) 1993-03-19 1994-04-12 Micron Semiconductor, Inc. Method for shaping features of a semiconductor structure using chemical mechanical planarization (CMP)
JP3236111B2 (ja) 1993-03-31 2001-12-10 キヤノン株式会社 プラズマ処理装置及び処理方法
US5800686A (en) 1993-04-05 1998-09-01 Applied Materials, Inc. Chemical vapor deposition chamber with substrate edge protection
KR0142150B1 (ko) 1993-04-09 1998-07-15 윌리엄 티. 엘리스 붕소 질화물을 에칭하기 위한 방법
US5416048A (en) 1993-04-16 1995-05-16 Micron Semiconductor, Inc. Method to slope conductor profile prior to dielectric deposition to improve dielectric step-coverage
EP0628644B1 (en) 1993-05-27 2003-04-02 Applied Materials, Inc. Improvements in or relating to susceptors suitable for use in chemical vapour deposition devices
US5591269A (en) 1993-06-24 1997-01-07 Tokyo Electron Limited Vacuum processing apparatus
US5292682A (en) 1993-07-06 1994-03-08 Eastman Kodak Company Method of making two-phase charge coupled device
US5413670A (en) 1993-07-08 1995-05-09 Air Products And Chemicals, Inc. Method for plasma etching or cleaning with diluted NF3
US5560779A (en) 1993-07-12 1996-10-01 Olin Corporation Apparatus for synthesizing diamond films utilizing an arc plasma
WO1995002900A1 (en) 1993-07-15 1995-01-26 Astarix, Inc. Aluminum-palladium alloy for initiation of electroless plating
DE69421465T2 (de) 1993-07-30 2000-02-10 Applied Materials, Inc. Verfahren zur Ablagerung von Silzium-Nitrid auf Siliziumoberflächen
US5483920A (en) 1993-08-05 1996-01-16 Board Of Governors Of Wayne State University Method of forming cubic boron nitride films
US5685946A (en) 1993-08-11 1997-11-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices
US5468597A (en) 1993-08-25 1995-11-21 Shipley Company, L.L.C. Selective metallization process
US5614055A (en) 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5865896A (en) 1993-08-27 1999-02-02 Applied Materials, Inc. High density plasma CVD reactor with combined inductive and capacitive coupling
US5384284A (en) 1993-10-01 1995-01-24 Micron Semiconductor, Inc. Method to form a low resistant bond pad interconnect
SE501888C2 (sv) 1993-10-18 1995-06-12 Ladislav Bardos En metod och en apparat för generering av en urladdning i egna ångor från en radiofrekvenselektrod för kontinuerlig självförstoftning av elektroden
US5505816A (en) 1993-12-16 1996-04-09 International Business Machines Corporation Etching of silicon dioxide selectively to silicon nitride and polysilicon
US5415890A (en) 1994-01-03 1995-05-16 Eaton Corporation Modular apparatus and method for surface treatment of parts with liquid baths
US5403434A (en) 1994-01-06 1995-04-04 Texas Instruments Incorporated Low-temperature in-situ dry cleaning process for semiconductor wafer
JP3188363B2 (ja) 1994-01-21 2001-07-16 エフエスアイ・インターナショナル・インコーポレーテッド 循環クーラントを用いた温度コントローラ及びそのための温度制御方法
US5399237A (en) 1994-01-27 1995-03-21 Applied Materials, Inc. Etching titanium nitride using carbon-fluoride and carbon-oxide gas
US5451259A (en) 1994-02-17 1995-09-19 Krogh; Ole D. ECR plasma source for remote processing
US5454170A (en) 1994-03-02 1995-10-03 Vlsi Technology Inc. Robot to pedestal alignment head
US5439553A (en) 1994-03-30 1995-08-08 Penn State Research Foundation Controlled etching of oxides via gas phase reactions
EP0680072B1 (en) 1994-04-28 2003-10-08 Applied Materials, Inc. A method of operating a high density plasma CVD reactor with combined inductive and capacitive coupling
US5468342A (en) 1994-04-28 1995-11-21 Cypress Semiconductor Corp. Method of etching an oxide layer
US6110838A (en) 1994-04-29 2000-08-29 Texas Instruments Incorporated Isotropic polysilicon plus nitride stripping
US5531835A (en) 1994-05-18 1996-07-02 Applied Materials, Inc. Patterned susceptor to reduce electrostatic force in a CVD chamber
US5628829A (en) 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
US5665640A (en) 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5580421A (en) 1994-06-14 1996-12-03 Fsi International Apparatus for surface conditioning
US5767373A (en) 1994-06-16 1998-06-16 Novartis Finance Corporation Manipulation of protoporphyrinogen oxidase enzyme activity in eukaryotic organisms
US5580385A (en) 1994-06-30 1996-12-03 Texas Instruments, Incorporated Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber
JP3501524B2 (ja) 1994-07-01 2004-03-02 東京エレクトロン株式会社 処理装置の真空排気システム
JP3411678B2 (ja) 1994-07-08 2003-06-03 東京エレクトロン株式会社 処理装置
US5592358A (en) 1994-07-18 1997-01-07 Applied Materials, Inc. Electrostatic chuck for magnetic flux processing
US5563105A (en) 1994-09-30 1996-10-08 International Business Machines Corporation PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element
JPH08107101A (ja) 1994-10-03 1996-04-23 Fujitsu Ltd プラズマ処理装置及びプラズマ処理方法
US5597439A (en) 1994-10-26 1997-01-28 Applied Materials, Inc. Process gas inlet and distribution passages
TW344897B (en) 1994-11-30 1998-11-11 At&T Tcorporation A process for forming gate oxides possessing different thicknesses on a semiconductor substrate
US5558717A (en) 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
CN1053764C (zh) 1994-12-09 2000-06-21 中国科学院微电子中心 束致变蚀方法
US5605637A (en) 1994-12-15 1997-02-25 Applied Materials Inc. Adjustable dc bias control in a plasma reactor
EP0795048B1 (en) 1994-12-19 2000-03-15 Alcan International Limited Cleaning aluminium workpieces
US5792376A (en) 1995-01-06 1998-08-11 Kabushiki Kaisha Toshiba Plasma processing apparatus and plasma processing method
US5772770A (en) 1995-01-27 1998-06-30 Kokusai Electric Co, Ltd. Substrate processing apparatus
JPH08279495A (ja) 1995-02-07 1996-10-22 Seiko Epson Corp プラズマ処理装置及びその方法
US5571576A (en) 1995-02-10 1996-11-05 Watkins-Johnson Method of forming a fluorinated silicon oxide layer using plasma chemical vapor deposition
US5670066A (en) 1995-03-17 1997-09-23 Lam Research Corporation Vacuum plasma processing wherein workpiece position is detected prior to chuck being activated
US6039851A (en) 1995-03-22 2000-03-21 Micron Technology, Inc. Reactive sputter faceting of silicon dioxide to enhance gap fill of spaces between metal lines
US5556521A (en) 1995-03-24 1996-09-17 Sony Corporation Sputter etching apparatus with plasma source having a dielectric pocket and contoured plasma source
JPH08264510A (ja) 1995-03-27 1996-10-11 Toshiba Corp シリコン窒化膜のエッチング方法およびエッチング装置
US5571577A (en) 1995-04-07 1996-11-05 Board Of Trustees Operating Michigan State University Method and apparatus for plasma treatment of a surface
JP3270852B2 (ja) 1995-04-20 2002-04-02 東京エレクトロン株式会社 圧力調整装置及びこれを用いた部屋の連通方法
JP3360098B2 (ja) 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
TW434745B (en) 1995-06-07 2001-05-16 Tokyo Electron Ltd Plasma processing apparatus
US20010028922A1 (en) 1995-06-07 2001-10-11 Sandhu Gurtej S. High throughput ILD fill process for high aspect ratio gap fill
JP3599204B2 (ja) 1995-06-08 2004-12-08 アネルバ株式会社 Ｃｖｄ装置
JP2814370B2 (ja) 1995-06-18 1998-10-22 東京エレクトロン株式会社 プラズマ処理装置
US5997962A (en) 1995-06-30 1999-12-07 Tokyo Electron Limited Plasma process utilizing an electrostatic chuck
US5968379A (en) 1995-07-14 1999-10-19 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability and related methods
US6022446A (en) 1995-08-21 2000-02-08 Shan; Hongching Shallow magnetic fields for generating circulating electrons to enhance plasma processing
US6197364B1 (en) 1995-08-22 2001-03-06 International Business Machines Corporation Production of electroless Co(P) with designed coercivity
US5755859A (en) 1995-08-24 1998-05-26 International Business Machines Corporation Cobalt-tin alloys and their applications for devices, chip interconnections and packaging
WO1997009737A1 (en) 1995-09-01 1997-03-13 Advanced Semiconductor Materials America, Inc. Wafer support system
US6228751B1 (en) 1995-09-08 2001-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US5719085A (en) 1995-09-29 1998-02-17 Intel Corporation Shallow trench isolation technique
US5716506A (en) 1995-10-06 1998-02-10 Board Of Trustees Of The University Of Illinois Electrochemical sensors for gas detection
JPH09106898A (ja) 1995-10-09 1997-04-22 Anelva Corp プラズマｃｖｄ装置、プラズマ処理装置及びプラズマｃｖｄ方法
US5635086A (en) 1995-10-10 1997-06-03 The Esab Group, Inc. Laser-plasma arc metal cutting apparatus
JPH09106899A (ja) 1995-10-11 1997-04-22 Anelva Corp プラズマｃｖｄ装置及び方法並びにドライエッチング装置及び方法
US5814238A (en) 1995-10-12 1998-09-29 Sandia Corporation Method for dry etching of transition metals
US5910340A (en) 1995-10-23 1999-06-08 C. Uyemura & Co., Ltd. Electroless nickel plating solution and method
US6015724A (en) 1995-11-02 2000-01-18 Semiconductor Energy Laboratory Co. Manufacturing method of a semiconductor device
US5648125A (en) 1995-11-16 1997-07-15 Cane; Frank N. Electroless plating process for the manufacture of printed circuit boards
US5599740A (en) 1995-11-16 1997-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Deposit-etch-deposit ozone/teos insulator layer method
US5846598A (en) 1995-11-30 1998-12-08 International Business Machines Corporation Electroless plating of metallic features on nonmetallic or semiconductor layer without extraneous plating
US5756400A (en) 1995-12-08 1998-05-26 Applied Materials, Inc. Method and apparatus for cleaning by-products from plasma chamber surfaces
US5733816A (en) 1995-12-13 1998-03-31 Micron Technology, Inc. Method for depositing a tungsten layer on silicon
US6261637B1 (en) 1995-12-15 2001-07-17 Enthone-Omi, Inc. Use of palladium immersion deposition to selectively initiate electroless plating on Ti and W alloys for wafer fabrication
WO1997022733A1 (en) 1995-12-19 1997-06-26 Fsi International Electroless deposition of metal films with spray processor
US5883012A (en) 1995-12-21 1999-03-16 Motorola, Inc. Method of etching a trench into a semiconductor substrate
EP0870327B1 (en) 1995-12-27 2002-09-11 Lam Research Corporation Method for filling trenches in a semiconductor wafer
US5679606A (en) 1995-12-27 1997-10-21 Taiwan Semiconductor Manufacturing Company, Ltd. method of forming inter-metal-dielectric structure
KR100260957B1 (ko) 1995-12-28 2000-07-01 츠치야 히로오 박판형상의 기판 이송방법 및 이송장치
US5891513A (en) 1996-01-16 1999-04-06 Cornell Research Foundation Electroless CU deposition on a barrier layer by CU contact displacement for ULSI applications
US5824599A (en) 1996-01-16 1998-10-20 Cornell Research Foundation, Inc. Protected encapsulation of catalytic layer for electroless copper interconnect
US5674787A (en) 1996-01-16 1997-10-07 Sematech, Inc. Selective electroless copper deposited interconnect plugs for ULSI applications
US6036878A (en) 1996-02-02 2000-03-14 Applied Materials, Inc. Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna
US5872052A (en) 1996-02-12 1999-02-16 Micron Technology, Inc. Planarization using plasma oxidized amorphous silicon
US5648175A (en) 1996-02-14 1997-07-15 Applied Materials, Inc. Chemical vapor deposition reactor system and integrated circuit
US6004884A (en) 1996-02-15 1999-12-21 Lam Research Corporation Methods and apparatus for etching semiconductor wafers
US6200412B1 (en) 1996-02-16 2001-03-13 Novellus Systems, Inc. Chemical vapor deposition system including dedicated cleaning gas injection
TW335517B (en) 1996-03-01 1998-07-01 Hitachi Ltd Apparatus and method for processing plasma
US5656093A (en) 1996-03-08 1997-08-12 Applied Materials, Inc. Wafer spacing mask for a substrate support chuck and method of fabricating same
JPH09260356A (ja) 1996-03-22 1997-10-03 Toshiba Corp ドライエッチング方法
EP0891684B1 (en) 1996-03-25 2008-11-12 S. George Lesinski Attaching of an implantable hearing aid microactuator
US6065425A (en) 1996-03-25 2000-05-23 Canon Kabushiki Kaisha Plasma process apparatus and plasma process method
US5858876A (en) 1996-04-01 1999-01-12 Chartered Semiconductor Manufacturing, Ltd. Simultaneous deposit and etch method for forming a void-free and gap-filling insulator layer upon a patterned substrate layer
US5712185A (en) 1996-04-23 1998-01-27 United Microelectronics Method for forming shallow trench isolation
US5843847A (en) 1996-04-29 1998-12-01 Applied Materials, Inc. Method for etching dielectric layers with high selectivity and low microloading
US6176667B1 (en) 1996-04-30 2001-01-23 Applied Materials, Inc. Multideck wafer processing system
KR100230981B1 (ko) 1996-05-08 1999-11-15 김광호 반도체장치 제조공정의 플라즈마 식각 방법
US5660957A (en) 1996-05-16 1997-08-26 Fujitsu Limited Electron-beam treatment procedure for patterned mask layers
US6048798A (en) 1996-06-05 2000-04-11 Lam Research Corporation Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer
US5820723A (en) 1996-06-05 1998-10-13 Lam Research Corporation Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US5863376A (en) 1996-06-05 1999-01-26 Lam Research Corporation Temperature controlling method and apparatus for a plasma processing chamber
JPH1068094A (ja) 1996-06-13 1998-03-10 Samsung Electron Co Ltd 遷移金属薄膜用蝕刻ガス混合物およびこれを用いた遷移金属薄膜の蝕刻方法
US5846373A (en) 1996-06-28 1998-12-08 Lam Research Corporation Method for monitoring process endpoints in a plasma chamber and a process monitoring arrangement in a plasma chamber
US5885358A (en) 1996-07-09 1999-03-23 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
US5846883A (en) 1996-07-10 1998-12-08 Cvc, Inc. Method for multi-zone high-density inductively-coupled plasma generation
US6209480B1 (en) 1996-07-10 2001-04-03 Mehrdad M. Moslehi Hermetically-sealed inductively-coupled plasma source structure and method of use
US5993916A (en) 1996-07-12 1999-11-30 Applied Materials, Inc. Method for substrate processing with improved throughput and yield
US5846332A (en) 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
US6170428B1 (en) 1996-07-15 2001-01-09 Applied Materials, Inc. Symmetric tunable inductively coupled HDP-CVD reactor
US5781693A (en) 1996-07-24 1998-07-14 Applied Materials, Inc. Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween
US5868897A (en) 1996-07-31 1999-02-09 Toyo Technologies, Inc. Device and method for processing a plasma to alter the surface of a substrate using neutrals
JPH1079372A (ja) * 1996-09-03 1998-03-24 Matsushita Electric Ind Co Ltd プラズマ処理方法及びプラズマ処理装置
US5661093A (en) 1996-09-12 1997-08-26 Applied Materials, Inc. Method for the stabilization of halogen-doped films through the use of multiple sealing layers
US5888906A (en) 1996-09-16 1999-03-30 Micron Technology, Inc. Plasmaless dry contact cleaning method using interhalogen compounds
US5747373A (en) 1996-09-24 1998-05-05 Taiwan Semiconductor Manufacturing Company Ltd. Nitride-oxide sidewall spacer for salicide formation
US5846375A (en) 1996-09-26 1998-12-08 Micron Technology, Inc. Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment
US5835334A (en) 1996-09-30 1998-11-10 Lam Research Variable high temperature chuck for high density plasma chemical vapor deposition
US5904827A (en) 1996-10-15 1999-05-18 Reynolds Tech Fabricators, Inc. Plating cell with rotary wiper and megasonic transducer
US6308654B1 (en) 1996-10-18 2001-10-30 Applied Materials, Inc. Inductively coupled parallel-plate plasma reactor with a conical dome
US5951776A (en) 1996-10-25 1999-09-14 Applied Materials, Inc. Self aligning lift mechanism
KR100237825B1 (ko) 1996-11-05 2000-01-15 윤종용 반도체장치 제조설비의 페디스탈
US5804259A (en) 1996-11-07 1998-09-08 Applied Materials, Inc. Method and apparatus for depositing a multilayered low dielectric constant film
US5935340A (en) 1996-11-13 1999-08-10 Applied Materials, Inc. Method and apparatus for gettering fluorine from chamber material surfaces
US5994209A (en) 1996-11-13 1999-11-30 Applied Materials, Inc. Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films
US5968587A (en) 1996-11-13 1999-10-19 Applied Materials, Inc. Systems and methods for controlling the temperature of a vapor deposition apparatus
US5939831A (en) 1996-11-13 1999-08-17 Applied Materials, Inc. Methods and apparatus for pre-stabilized plasma generation for microwave clean applications
US5812403A (en) 1996-11-13 1998-09-22 Applied Materials, Inc. Methods and apparatus for cleaning surfaces in a substrate processing system
US5935334A (en) 1996-11-13 1999-08-10 Applied Materials, Inc. Substrate processing apparatus with bottom-mounted remote plasma system
US5963840A (en) 1996-11-13 1999-10-05 Applied Materials, Inc. Methods for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions
US6114216A (en) 1996-11-13 2000-09-05 Applied Materials, Inc. Methods for shallow trench isolation
US6019848A (en) 1996-11-13 2000-02-01 Applied Materials, Inc. Lid assembly for high temperature processing chamber
US5873781A (en) 1996-11-14 1999-02-23 Bally Gaming International, Inc. Gaming machine having truly random results
US5882786A (en) 1996-11-15 1999-03-16 C3, Inc. Gemstones formed of silicon carbide with diamond coating
US5855681A (en) 1996-11-18 1999-01-05 Applied Materials, Inc. Ultra high throughput wafer vacuum processing system
US6152070A (en) 1996-11-18 2000-11-28 Applied Materials, Inc. Tandem process chamber
US5830805A (en) 1996-11-18 1998-11-03 Cornell Research Foundation Electroless deposition equipment or apparatus and method of performing electroless deposition
US5844195A (en) 1996-11-18 1998-12-01 Applied Materials, Inc. Remote plasma source
US5695810A (en) 1996-11-20 1997-12-09 Cornell Research Foundation, Inc. Use of cobalt tungsten phosphide as a barrier material for copper metallization
US5951896A (en) 1996-12-04 1999-09-14 Micro C Technologies, Inc. Rapid thermal processing heater technology and method of use
FR2756663B1 (fr) 1996-12-04 1999-02-26 Berenguer Marc Procede de traitement d'un substrat semi-conducteur comprenant une etape de traitement de surface
US6312554B1 (en) 1996-12-05 2001-11-06 Applied Materials, Inc. Apparatus and method for controlling the ratio of reactive to non-reactive ions in a semiconductor wafer processing chamber
JPH10172792A (ja) 1996-12-05 1998-06-26 Tokyo Electron Ltd プラズマ処理装置
US5843538A (en) 1996-12-09 1998-12-01 John L. Raymond Method for electroless nickel plating of metal substrates
DE19651646C2 (de) 1996-12-12 2002-07-11 Deutsch Zentr Luft & Raumfahrt Verfahren zum Einblasen einer ersten und zweiten Brennstoffkomponente und Einblaskopf
US5953635A (en) 1996-12-19 1999-09-14 Intel Corporation Interlayer dielectric with a composite dielectric stack
US5948702A (en) 1996-12-19 1999-09-07 Texas Instruments Incorporated Selective removal of TixNy
US6120640A (en) 1996-12-19 2000-09-19 Applied Materials, Inc. Boron carbide parts and coatings in a plasma reactor
KR100234539B1 (ko) 1996-12-24 1999-12-15 윤종용 반도체장치 제조용 식각 장치
US5788825A (en) 1996-12-30 1998-08-04 Samsung Electronics Co., Ltd. Vacuum pumping system for a sputtering device
US5955037A (en) 1996-12-31 1999-09-21 Atmi Ecosys Corporation Effluent gas stream treatment system having utility for oxidation treatment of semiconductor manufacturing effluent gases
DE19700231C2 (de) 1997-01-07 2001-10-04 Geesthacht Gkss Forschung Vorrichtung zum Filtern und Trennen von Strömungsmedien
TW415970B (en) 1997-01-08 2000-12-21 Ebara Corp Vapor-phase film growth apparatus and gas ejection head
US5882424A (en) 1997-01-21 1999-03-16 Applied Materials, Inc. Plasma cleaning of a CVD or etch reactor using a low or mixed frequency excitation field
US5913147A (en) 1997-01-21 1999-06-15 Advanced Micro Devices, Inc. Method for fabricating copper-aluminum metallization
JPH10223608A (ja) 1997-02-04 1998-08-21 Sony Corp 半導体装置の製造方法
US5800621A (en) 1997-02-10 1998-09-01 Applied Materials, Inc. Plasma source for HDP-CVD chamber
US6035101A (en) 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
US6013584A (en) 1997-02-19 2000-01-11 Applied Materials, Inc. Methods and apparatus for forming HDP-CVD PSG film used for advanced pre-metal dielectric layer applications
DE19706682C2 (de) 1997-02-20 1999-01-14 Bosch Gmbh Robert Anisotropes fluorbasiertes Plasmaätzverfahren für Silizium
US5990000A (en) 1997-02-20 1999-11-23 Applied Materials, Inc. Method and apparatus for improving gap-fill capability using chemical and physical etchbacks
US6479373B2 (en) 1997-02-20 2002-11-12 Infineon Technologies Ag Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases
US6190233B1 (en) 1997-02-20 2001-02-20 Applied Materials, Inc. Method and apparatus for improving gap-fill capability using chemical and physical etchbacks
US6059643A (en) 1997-02-21 2000-05-09 Aplex, Inc. Apparatus and method for polishing a flat surface using a belted polishing pad
US6328803B2 (en) 1997-02-21 2001-12-11 Micron Technology, Inc. Method and apparatus for controlling rate of pressure change in a vacuum process chamber
US6267074B1 (en) 1997-02-24 2001-07-31 Foi Corporation Plasma treatment systems
US6376386B1 (en) 1997-02-25 2002-04-23 Fujitsu Limited Method of etching silicon nitride by a mixture of CH2 F2, CH3F or CHF3 and an inert gas
US5789300A (en) 1997-02-25 1998-08-04 Advanced Micro Devices, Inc. Method of making IGFETs in densely and sparsely populated areas of a substrate
US6039834A (en) 1997-03-05 2000-03-21 Applied Materials, Inc. Apparatus and methods for upgraded substrate processing system with microwave plasma source
TW418461B (en) 1997-03-07 2001-01-11 Tokyo Electron Ltd Plasma etching device
US5850105A (en) 1997-03-21 1998-12-15 Advanced Micro Devices, Inc. Substantially planar semiconductor topography using dielectrics and chemical mechanical polish
TW376547B (en) 1997-03-27 1999-12-11 Matsushita Electric Ind Co Ltd Method and apparatus for plasma processing
US5786276A (en) 1997-03-31 1998-07-28 Applied Materials, Inc. Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and CF4 and O2
US6030666A (en) 1997-03-31 2000-02-29 Lam Research Corporation Method for microwave plasma substrate heating
US6017414A (en) 1997-03-31 2000-01-25 Lam Research Corporation Method of and apparatus for detecting and controlling in situ cleaning time of vacuum processing chambers
JPH10284360A (ja) 1997-04-02 1998-10-23 Hitachi Ltd 基板温度制御装置及び方法
US5968610A (en) 1997-04-02 1999-10-19 United Microelectronics Corp. Multi-step high density plasma chemical vapor deposition process
US5866483A (en) 1997-04-04 1999-02-02 Applied Materials, Inc. Method for anisotropically etching tungsten using SF6, CHF3, and N2
US6174450B1 (en) 1997-04-16 2001-01-16 Lam Research Corporation Methods and apparatus for controlling ion energy and plasma density in a plasma processing system
US6143158A (en) 1997-04-25 2000-11-07 Fuji Photo Film Co., Ltd. Method for producing an aluminum support for a lithographic printing plate
US6204200B1 (en) 1997-05-05 2001-03-20 Texas Instruments Incorporated Process scheme to form controlled airgaps between interconnect lines to reduce capacitance
US6149828A (en) 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
US5969422A (en) 1997-05-15 1999-10-19 Advanced Micro Devices, Inc. Plated copper interconnect structure
US6189483B1 (en) 1997-05-29 2001-02-20 Applied Materials, Inc. Process kit
US6083344A (en) 1997-05-29 2000-07-04 Applied Materials, Inc. Multi-zone RF inductively coupled source configuration
US6136685A (en) 1997-06-03 2000-10-24 Applied Materials, Inc. High deposition rate recipe for low dielectric constant films
US5937323A (en) 1997-06-03 1999-08-10 Applied Materials, Inc. Sequencing of the recipe steps for the optimal low-k HDP-CVD processing
US6706334B1 (en) 1997-06-04 2004-03-16 Tokyo Electron Limited Processing method and apparatus for removing oxide film
US5872058A (en) 1997-06-17 1999-02-16 Novellus Systems, Inc. High aspect ratio gapfill process by using HDP
US5885749A (en) 1997-06-20 1999-03-23 Clear Logic, Inc. Method of customizing integrated circuits by selective secondary deposition of layer interconnect material
US5933757A (en) 1997-06-23 1999-08-03 Lsi Logic Corporation Etch process selective to cobalt silicide for formation of integrated circuit structures
US6388226B1 (en) 1997-06-26 2002-05-14 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6150628A (en) 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6815633B1 (en) 1997-06-26 2004-11-09 Applied Science & Technology, Inc. Inductively-coupled toroidal plasma source
US6518155B1 (en) 1997-06-30 2003-02-11 Intel Corporation Device structure and method for reducing silicide encroachment
US6184121B1 (en) 1997-07-10 2001-02-06 International Business Machines Corporation Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same
US6037273A (en) 1997-07-11 2000-03-14 Applied Materials, Inc. Method and apparatus for insitu vapor generation
US5944049A (en) 1997-07-15 1999-08-31 Applied Materials, Inc. Apparatus and method for regulating a pressure in a chamber
JPH1136076A (ja) 1997-07-16 1999-02-09 Tokyo Electron Ltd Ｃｖｄ成膜装置およびｃｖｄ成膜方法
US5982100A (en) 1997-07-28 1999-11-09 Pars, Inc. Inductively coupled plasma reactor
US6090212A (en) 1997-08-15 2000-07-18 Micro C Technologies, Inc. Substrate platform for a semiconductor substrate during rapid high temperature processing and method of supporting a substrate
US6007635A (en) 1997-11-26 1999-12-28 Micro C Technologies, Inc. Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing
US5814365A (en) 1997-08-15 1998-09-29 Micro C Technologies, Inc. Reactor and method of processing a semiconductor substate
US5926737A (en) 1997-08-19 1999-07-20 Tokyo Electron Limited Use of TiCl4 etchback process during integrated CVD-Ti/TiN wafer processing
US6080446A (en) 1997-08-21 2000-06-27 Anelva Corporation Method of depositing titanium nitride thin film and CVD deposition apparatus
US6258170B1 (en) 1997-09-11 2001-07-10 Applied Materials, Inc. Vaporization and deposition apparatus
US6063688A (en) 1997-09-29 2000-05-16 Intel Corporation Fabrication of deep submicron structures and quantum wire transistors using hard-mask transistor width definition
US6161500A (en) 1997-09-30 2000-12-19 Tokyo Electron Limited Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
US6364957B1 (en) 1997-10-09 2002-04-02 Applied Materials, Inc. Support assembly with thermal expansion compensation
US6688375B1 (en) 1997-10-14 2004-02-10 Applied Materials, Inc. Vacuum processing system having improved substrate heating and cooling
US6110556A (en) 1997-10-17 2000-08-29 Applied Materials, Inc. Lid assembly for a process chamber employing asymmetric flow geometries
GB9722028D0 (en) 1997-10-17 1997-12-17 Shipley Company Ll C Plating of polymers
US6379575B1 (en) 1997-10-21 2002-04-30 Applied Materials, Inc. Treatment of etching chambers using activated cleaning gas
US6136693A (en) 1997-10-27 2000-10-24 Chartered Semiconductor Manufacturing Ltd. Method for planarized interconnect vias using electroless plating and CMP
US6013191A (en) 1997-10-27 2000-01-11 Advanced Refractory Technologies, Inc. Method of polishing CVD diamond films by oxygen plasma
US6063712A (en) 1997-11-25 2000-05-16 Micron Technology, Inc. Oxide etch and method of etching
US5849639A (en) 1997-11-26 1998-12-15 Lucent Technologies Inc. Method for removing etching residues and contaminants
US6136165A (en) 1997-11-26 2000-10-24 Cvc Products, Inc. Apparatus for inductively-coupled-plasma-enhanced ionized physical-vapor deposition
US6079356A (en) 1997-12-02 2000-06-27 Applied Materials, Inc. Reactor optimized for chemical vapor deposition of titanium
US6077780A (en) 1997-12-03 2000-06-20 Advanced Micro Devices, Inc. Method for filling high aspect ratio openings of an integrated circuit to minimize electromigration failure
US6143476A (en) 1997-12-12 2000-11-07 Applied Materials Inc Method for high temperature etching of patterned layers using an organic mask stack
US5976327A (en) 1997-12-12 1999-11-02 Applied Materials, Inc. Step coverage and overhang improvement by pedestal bias voltage modulation
US6083844A (en) 1997-12-22 2000-07-04 Lam Research Corporation Techniques for etching an oxide layer
US6415858B1 (en) 1997-12-31 2002-07-09 Temptronic Corporation Temperature control system for a workpiece chuck
US6406759B1 (en) 1998-01-08 2002-06-18 The University Of Tennessee Research Corporation Remote exposure of workpieces using a recirculated plasma
US6140234A (en) 1998-01-20 2000-10-31 International Business Machines Corporation Method to selectively fill recesses with conductive metal
US6635578B1 (en) 1998-02-09 2003-10-21 Applied Materials, Inc Method of operating a dual chamber reactor with neutral density decoupled from ion density
US6074514A (en) 1998-02-09 2000-06-13 Applied Materials, Inc. High selectivity etch using an external plasma discharge
US5932077A (en) 1998-02-09 1999-08-03 Reynolds Tech Fabricators, Inc. Plating cell with horizontal product load mechanism
US6340435B1 (en) 1998-02-11 2002-01-22 Applied Materials, Inc. Integrated low K dielectrics and etch stops
US6627532B1 (en) 1998-02-11 2003-09-30 Applied Materials, Inc. Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition
US6186091B1 (en) 1998-02-11 2001-02-13 Silicon Genesis Corporation Shielded platen design for plasma immersion ion implantation
US6054379A (en) 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6197688B1 (en) 1998-02-12 2001-03-06 Motorola Inc. Interconnect structure in a semiconductor device and method of formation
US6171661B1 (en) 1998-02-25 2001-01-09 Applied Materials, Inc. Deposition of copper with increased adhesion
JP4151862B2 (ja) 1998-02-26 2008-09-17 キヤノンアネルバ株式会社 Ｃｖｄ装置
US6892669B2 (en) 1998-02-26 2005-05-17 Anelva Corporation CVD apparatus
JP4217299B2 (ja) 1998-03-06 2009-01-28 東京エレクトロン株式会社 処理装置
US6551939B2 (en) 1998-03-17 2003-04-22 Anneal Corporation Plasma surface treatment method and resulting device
US5920792A (en) 1998-03-19 1999-07-06 Winbond Electronics Corp High density plasma enhanced chemical vapor deposition process in combination with chemical mechanical polishing process for preparation and planarization of intemetal dielectric layers
US6194038B1 (en) 1998-03-20 2001-02-27 Applied Materials, Inc. Method for deposition of a conformal layer on a substrate
US6565729B2 (en) 1998-03-20 2003-05-20 Semitool, Inc. Method for electrochemically depositing metal on a semiconductor workpiece
US6197181B1 (en) 1998-03-20 2001-03-06 Semitool, Inc. Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece
US6602434B1 (en) 1998-03-27 2003-08-05 Applied Materials, Inc. Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window
US6203657B1 (en) 1998-03-31 2001-03-20 Lam Research Corporation Inductively coupled plasma downstream strip module
US6395150B1 (en) 1998-04-01 2002-05-28 Novellus Systems, Inc. Very high aspect ratio gapfill using HDP
KR20010042419A (ko) 1998-04-02 2001-05-25 조셉 제이. 스위니 낮은 ｋ 유전체를 에칭하는 방법
JP2976965B2 (ja) 1998-04-02 1999-11-10 日新電機株式会社 成膜方法及び成膜装置
US6198616B1 (en) 1998-04-03 2001-03-06 Applied Materials, Inc. Method and apparatus for supplying a chucking voltage to an electrostatic chuck within a semiconductor wafer processing system
US6174810B1 (en) 1998-04-06 2001-01-16 Motorola, Inc. Copper interconnect structure and method of formation
US6117245A (en) 1998-04-08 2000-09-12 Applied Materials, Inc. Method and apparatus for controlling cooling and heating fluids for a gas distribution plate
US5997649A (en) 1998-04-09 1999-12-07 Tokyo Electron Limited Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
US6184489B1 (en) * 1998-04-13 2001-02-06 Nec Corporation Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles
US6113771A (en) 1998-04-21 2000-09-05 Applied Materials, Inc. Electro deposition chemistry
US6416647B1 (en) 1998-04-21 2002-07-09 Applied Materials, Inc. Electro-chemical deposition cell for face-up processing of single semiconductor substrates
US6077386A (en) 1998-04-23 2000-06-20 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6179924B1 (en) 1998-04-28 2001-01-30 Applied Materials, Inc. Heater for use in substrate processing apparatus to deposit tungsten
US6093594A (en) 1998-04-29 2000-07-25 Advanced Micro Devices, Inc. CMOS optimization method utilizing sacrificial sidewall spacer
US6081414A (en) 1998-05-01 2000-06-27 Applied Materials, Inc. Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system
US6030881A (en) 1998-05-05 2000-02-29 Novellus Systems, Inc. High throughput chemical vapor deposition process capable of filling high aspect ratio structures
US6218288B1 (en) 1998-05-11 2001-04-17 Micron Technology, Inc. Multiple step methods for forming conformal layers
KR100505310B1 (ko) 1998-05-13 2005-08-04 동경 엘렉트론 주식회사 성막 장치 및 방법
US6509283B1 (en) 1998-05-13 2003-01-21 National Semiconductor Corporation Thermal oxidation method utilizing atomic oxygen to reduce dangling bonds in silicon dioxide grown on silicon
US6007785A (en) 1998-05-20 1999-12-28 Academia Sinica Apparatus for efficient ozone generation
US6148761A (en) 1998-06-16 2000-11-21 Applied Materials, Inc. Dual channel gas distribution plate
KR100296137B1 (ko) 1998-06-16 2001-08-07 박종섭 보호막으로서고밀도플라즈마화학기상증착에의한절연막을갖는반도체소자제조방법
US6302964B1 (en) 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6086677A (en) 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6147009A (en) 1998-06-29 2000-11-14 International Business Machines Corporation Hydrogenated oxidized silicon carbon material
US6562128B1 (en) 2001-11-28 2003-05-13 Seh America, Inc. In-situ post epitaxial treatment process
DE69929607T2 (de) 1998-06-30 2006-07-27 Semitool, Inc., Kalispell Metallisierungsstrukturen für mikroelektronische anwendungen und verfahren zur herstellung dieser strukturen
US6037018A (en) 1998-07-01 2000-03-14 Taiwan Semiconductor Maufacturing Company Shallow trench isolation filled by high density plasma chemical vapor deposition
US6248429B1 (en) 1998-07-06 2001-06-19 Micron Technology, Inc. Metallized recess in a substrate
JP2000026975A (ja) 1998-07-09 2000-01-25 Komatsu Ltd 表面処理装置
KR100265866B1 (ko) 1998-07-11 2000-12-01 황철주 반도체 제조장치
US6182603B1 (en) 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
US6063683A (en) 1998-07-27 2000-05-16 Acer Semiconductor Manufacturing, Inc. Method of fabricating a self-aligned crown-shaped capacitor for high density DRAM cells
US6436816B1 (en) 1998-07-31 2002-08-20 Industrial Technology Research Institute Method of electroless plating copper on nitride barrier
US6162370A (en) 1998-08-28 2000-12-19 Ashland Inc. Composition and method for selectively etching a silicon nitride film
US6383951B1 (en) 1998-09-03 2002-05-07 Micron Technology, Inc. Low dielectric constant material for integrated circuit fabrication
US6440863B1 (en) 1998-09-04 2002-08-27 Taiwan Semiconductor Manufacturing Company Plasma etch method for forming patterned oxygen containing plasma etchable layer
US6165912A (en) 1998-09-17 2000-12-26 Cfmt, Inc. Electroless metal deposition of electronic components in an enclosable vessel
US6037266A (en) 1998-09-28 2000-03-14 Taiwan Semiconductor Manufacturing Company Method for patterning a polysilicon gate with a thin gate oxide in a polysilicon etcher
JP3725708B2 (ja) 1998-09-29 2005-12-14 株式会社東芝 半導体装置
US6170429B1 (en) 1998-09-30 2001-01-09 Lam Research Corporation Chamber liner for semiconductor process chambers
US6277733B1 (en) 1998-10-05 2001-08-21 Texas Instruments Incorporated Oxygen-free, dry plasma process for polymer removal
JP3764594B2 (ja) 1998-10-12 2006-04-12 株式会社日立製作所 プラズマ処理方法
US6180523B1 (en) 1998-10-13 2001-01-30 Industrial Technology Research Institute Copper metallization of USLI by electroless process
US6228758B1 (en) 1998-10-14 2001-05-08 Advanced Micro Devices, Inc. Method of making dual damascene conductive interconnections and integrated circuit device comprising same
US6251802B1 (en) 1998-10-19 2001-06-26 Micron Technology, Inc. Methods of forming carbon-containing layers
US6107199A (en) 1998-10-24 2000-08-22 International Business Machines Corporation Method for improving the morphology of refractory metal thin films
US20030101938A1 (en) 1998-10-27 2003-06-05 Applied Materials, Inc. Apparatus for the deposition of high dielectric constant films
US6454860B2 (en) 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
JP3064268B2 (ja) 1998-10-29 2000-07-12 アプライド マテリアルズ インコーポレイテッド 成膜方法及び装置
US6176198B1 (en) 1998-11-02 2001-01-23 Applied Materials, Inc. Apparatus and method for depositing low K dielectric materials
US6462371B1 (en) 1998-11-24 2002-10-08 Micron Technology Inc. Films doped with carbon for use in integrated circuit technology
US6203863B1 (en) 1998-11-27 2001-03-20 United Microelectronics Corp. Method of gap filling
US6228233B1 (en) 1998-11-30 2001-05-08 Applied Materials, Inc. Inflatable compliant bladder assembly
US6251236B1 (en) 1998-11-30 2001-06-26 Applied Materials, Inc. Cathode contact ring for electrochemical deposition
US6258220B1 (en) 1998-11-30 2001-07-10 Applied Materials, Inc. Electro-chemical deposition system
US6015747A (en) 1998-12-07 2000-01-18 Advanced Micro Device Method of metal/polysilicon gate formation in a field effect transistor
US6242349B1 (en) 1998-12-09 2001-06-05 Advanced Micro Devices, Inc. Method of forming copper/copper alloy interconnection with reduced electromigration
US6364954B2 (en) 1998-12-14 2002-04-02 Applied Materials, Inc. High temperature chemical vapor deposition chamber
EP1014434B1 (de) 1998-12-24 2008-03-26 ATMEL Germany GmbH Verfahren zum anisotropen plasmachemischen Trockenätzen von Siliziumnitrid-Schichten mittels eines Fluor-enthaltenden Gasgemisches
US6178919B1 (en) 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
DE19901210A1 (de) 1999-01-14 2000-07-27 Siemens Ag Halbleiterbauelement und Verfahren zu dessen Herstellung
KR100331544B1 (ko) 1999-01-18 2002-04-06 윤종용 반응챔버에 가스를 유입하는 방법 및 이에 사용되는 샤워헤드
US6499425B1 (en) 1999-01-22 2002-12-31 Micron Technology, Inc. Quasi-remote plasma processing method and apparatus
TW428256B (en) 1999-01-25 2001-04-01 United Microelectronics Corp Structure of conducting-wire layer and its fabricating method
JP3330554B2 (ja) 1999-01-27 2002-09-30 松下電器産業株式会社 エッチング方法
US6740247B1 (en) 1999-02-05 2004-05-25 Massachusetts Institute Of Technology HF vapor phase wafer cleaning and oxide etching
US6245669B1 (en) 1999-02-05 2001-06-12 Taiwan Semiconductor Manufacturing Company High selectivity Si-rich SiON etch-stop layer
KR100322545B1 (ko) 1999-02-10 2002-03-18 윤종용 건식 세정 공정을 전 공정으로 이용하는 반도체 장치의콘택홀 채움 방법
US6010962A (en) 1999-02-12 2000-01-04 Taiwan Semiconductor Manufacturing Company Copper chemical-mechanical-polishing (CMP) dishing
US6245670B1 (en) 1999-02-19 2001-06-12 Advanced Micro Devices, Inc. Method for filling a dual damascene opening having high aspect ratio to minimize electromigration failure
TW469534B (en) 1999-02-23 2001-12-21 Matsushita Electric Ind Co Ltd Plasma processing method and apparatus
US6291282B1 (en) 1999-02-26 2001-09-18 Texas Instruments Incorporated Method of forming dual metal gate structures or CMOS devices
TW582050B (en) 1999-03-03 2004-04-01 Ebara Corp Apparatus and method for processing substrate
US6136163A (en) 1999-03-05 2000-10-24 Applied Materials, Inc. Apparatus for electro-chemical deposition with thermal anneal chamber
US6312995B1 (en) 1999-03-08 2001-11-06 Advanced Micro Devices, Inc. MOS transistor with assisted-gates and ultra-shallow “Psuedo” source and drain extensions for ultra-large-scale integration
US6468604B1 (en) 1999-03-17 2002-10-22 Anelva Corporation Method for manufacturing a titanium nitride thin film
US6197705B1 (en) 1999-03-18 2001-03-06 Chartered Semiconductor Manufacturing Ltd. Method of silicon oxide and silicon glass films deposition
US6797189B2 (en) 1999-03-25 2004-09-28 Hoiman (Raymond) Hung Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon
US6238582B1 (en) 1999-03-30 2001-05-29 Veeco Instruments, Inc. Reactive ion beam etching method and a thin film head fabricated using the method
US6144099A (en) 1999-03-30 2000-11-07 Advanced Micro Devices, Inc. Semiconductor metalization barrier
JP2000290777A (ja) 1999-04-07 2000-10-17 Tokyo Electron Ltd ガス処理装置、バッフル部材、及びガス処理方法
US6263830B1 (en) 1999-04-12 2001-07-24 Matrix Integrated Systems, Inc. Microwave choke for remote plasma generator
US6099697A (en) 1999-04-13 2000-08-08 Applied Materials, Inc. Method of and apparatus for restoring a support surface in a semiconductor wafer processing system
US6110836A (en) 1999-04-22 2000-08-29 Applied Materials, Inc. Reactive plasma etch cleaning of high aspect ratio openings
US6450116B1 (en) 1999-04-22 2002-09-17 Applied Materials, Inc. Apparatus for exposing a substrate to plasma radicals
US6110832A (en) 1999-04-28 2000-08-29 International Business Machines Corporation Method and apparatus for slurry polishing
JP3965258B2 (ja) 1999-04-30 2007-08-29 日本碍子株式会社 半導体製造装置用のセラミックス製ガス供給構造
US6541671B1 (en) 2002-02-13 2003-04-01 The Regents Of The University Of California Synthesis of 2H- and 13C-substituted dithanes
JP3099066B1 (ja) 1999-05-07 2000-10-16 東京工業大学長 薄膜構造体の製造方法
US6310755B1 (en) 1999-05-07 2001-10-30 Applied Materials, Inc. Electrostatic chuck having gas cavity and method
US6490146B2 (en) 1999-05-07 2002-12-03 Applied Materials Inc. Electrostatic chuck bonded to base with a bond layer and method
JP3482904B2 (ja) 1999-05-10 2004-01-06 松下電器産業株式会社 プラズマ処理方法及び装置
US7091605B2 (en) 2001-09-21 2006-08-15 Eastman Kodak Company Highly moisture-sensitive electronic device element and method for fabrication
WO2000070117A1 (en) 1999-05-14 2000-11-23 The Regents Of The University Of California Low-temperature compatible wide-pressure-range plasma flow device
US6129829A (en) 1999-05-14 2000-10-10 Thompson; Donald E. Electrostatic filter for dielectric fluid
JP2000331993A (ja) 1999-05-19 2000-11-30 Mitsubishi Electric Corp プラズマ処理装置
US6464795B1 (en) 1999-05-21 2002-10-15 Applied Materials, Inc. Substrate support member for a processing chamber
JP3384795B2 (ja) 1999-05-26 2003-03-10 忠弘 大見 プラズマプロセス装置
US6323128B1 (en) 1999-05-26 2001-11-27 International Business Machines Corporation Method for forming Co-W-P-Au films
JP3320685B2 (ja) 1999-06-02 2002-09-03 株式会社半導体先端テクノロジーズ 微細パターン形成方法
US6916399B1 (en) 1999-06-03 2005-07-12 Applied Materials Inc Temperature controlled window with a fluid supply system
US6565661B1 (en) 1999-06-04 2003-05-20 Simplus Systems Corporation High flow conductance and high thermal conductance showerhead system and method
US6174812B1 (en) 1999-06-08 2001-01-16 United Microelectronics Corp. Copper damascene technology for ultra large scale integration circuits
US20020033233A1 (en) 1999-06-08 2002-03-21 Stephen E. Savas Icp reactor having a conically-shaped plasma-generating section
US6367413B1 (en) 1999-06-15 2002-04-09 Tokyo Electron Limited Apparatus for monitoring substrate biasing during plasma processing of a substrate
US6821571B2 (en) 1999-06-18 2004-11-23 Applied Materials Inc. Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
US6161576A (en) 1999-06-23 2000-12-19 Mks Instruments, Inc. Integrated turbo pump and control valve system
US6110530A (en) 1999-06-25 2000-08-29 Applied Materials, Inc. CVD method of depositing copper films by using improved organocopper precursor blend
FR2795555B1 (fr) 1999-06-28 2002-12-13 France Telecom Procede de fabrication d'un dispositif semi-conducteur comprenant un empilement forme alternativement de couches de silicium et de couches de materiau dielectrique
US6277752B1 (en) 1999-06-28 2001-08-21 Taiwan Semiconductor Manufacturing Company Multiple etch method for forming residue free patterned hard mask layer
US6242360B1 (en) 1999-06-29 2001-06-05 Lam Research Corporation Plasma processing system apparatus, and method for delivering RF power to a plasma processing
US6444083B1 (en) 1999-06-30 2002-09-03 Lam Research Corporation Corrosion resistant component of semiconductor processing equipment and method of manufacturing thereof
US6245192B1 (en) 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6415736B1 (en) 1999-06-30 2002-07-09 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6516815B1 (en) 1999-07-09 2003-02-11 Applied Materials, Inc. Edge bead removal/spin rinse dry (EBR/SRD) module
US6258223B1 (en) 1999-07-09 2001-07-10 Applied Materials, Inc. In-situ electroless copper seed layer enhancement in an electroplating system
US6352081B1 (en) 1999-07-09 2002-03-05 Applied Materials, Inc. Method of cleaning a semiconductor device processing chamber after a copper etch process
US6351013B1 (en) 1999-07-13 2002-02-26 Advanced Micro Devices, Inc. Low-K sub spacer pocket formation for gate capacitance reduction
US6342733B1 (en) 1999-07-27 2002-01-29 International Business Machines Corporation Reduced electromigration and stressed induced migration of Cu wires by surface coating
US6281135B1 (en) 1999-08-05 2001-08-28 Axcelis Technologies, Inc. Oxygen free plasma stripping process
US6237527B1 (en) 1999-08-06 2001-05-29 Axcelis Technologies, Inc. System for improving energy purity and implant consistency, and for minimizing charge accumulation of an implanted substrate
US6235643B1 (en) 1999-08-10 2001-05-22 Applied Materials, Inc. Method for etching a trench having rounded top and bottom corners in a silicon substrate
DE60041341D1 (de) 1999-08-17 2009-02-26 Tokyo Electron Ltd Gepulstes plasmabehandlungsverfahren und vorrichtung
US6602806B1 (en) 1999-08-17 2003-08-05 Applied Materials, Inc. Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film
EP1077479A1 (en) 1999-08-17 2001-02-21 Applied Materials, Inc. Post-deposition treatment to enchance properties of Si-O-C low K film
EP1077480B1 (en) 1999-08-17 2008-11-12 Applied Materials, Inc. Method and apparatus to enhance properties of Si-O-C low K films
EP1077274A1 (en) 1999-08-17 2001-02-21 Applied Materials, Inc. Lid cooling mechanism and method for optimized deposition of low-k dielectric using tri methylsilane-ozone based processes
JP4220075B2 (ja) 1999-08-20 2009-02-04 東京エレクトロン株式会社 成膜方法および成膜装置
US6322716B1 (en) 1999-08-30 2001-11-27 Cypress Semiconductor Corp. Method for conditioning a plasma etch chamber
US6375748B1 (en) 1999-09-01 2002-04-23 Applied Materials, Inc. Method and apparatus for preventing edge deposition
JP4285853B2 (ja) 1999-09-08 2009-06-24 東京エレクトロン株式会社 処理方法
EP1083593A1 (en) 1999-09-10 2001-03-14 Interuniversitair Micro-Elektronica Centrum Vzw Etching of silicon nitride by anhydrous halogen gas
US6441492B1 (en) 1999-09-10 2002-08-27 James A. Cunningham Diffusion barriers for copper interconnect systems
US6548414B2 (en) 1999-09-14 2003-04-15 Infineon Technologies Ag Method of plasma etching thin films of difficult to dry etch materials
JP3514186B2 (ja) 1999-09-16 2004-03-31 日新電機株式会社 薄膜形成方法及び装置
US6503843B1 (en) 1999-09-21 2003-01-07 Applied Materials, Inc. Multistep chamber cleaning and film deposition process using a remote plasma that also enhances film gap fill
US6432819B1 (en) 1999-09-27 2002-08-13 Applied Materials, Inc. Method and apparatus of forming a sputtered doped seed layer
US6287643B1 (en) 1999-09-30 2001-09-11 Novellus Systems, Inc. Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor
US6153935A (en) 1999-09-30 2000-11-28 International Business Machines Corporation Dual etch stop/diffusion barrier for damascene interconnects
US6321587B1 (en) 1999-10-15 2001-11-27 Radian International Llc Solid state fluorine sensor system and method
US6423284B1 (en) 1999-10-18 2002-07-23 Advanced Technology Materials, Inc. Fluorine abatement using steam injection in oxidation treatment of semiconductor manufacturing effluent gases
US6364949B1 (en) 1999-10-19 2002-04-02 Applied Materials, Inc. 300 mm CVD chamber design for metal-organic thin film deposition
KR100338768B1 (ko) 1999-10-25 2002-05-30 윤종용 산화막 제거방법 및 산화막 제거를 위한 반도체 제조 장치
DE29919142U1 (de) 1999-10-30 2001-03-08 Agrodyn Hochspannungstechnik GmbH, 33803 Steinhagen Plasmadüse
US6551924B1 (en) 1999-11-02 2003-04-22 International Business Machines Corporation Post metalization chem-mech polishing dielectric etch
JP3366301B2 (ja) 1999-11-10 2003-01-14 日本電気株式会社 プラズマｃｖｄ装置
US6162302A (en) 1999-11-16 2000-12-19 Agilent Technologies Method of cleaning quartz substrates using conductive solutions
US8114245B2 (en) 1999-11-26 2012-02-14 Tadahiro Ohmi Plasma etching device
US6599842B2 (en) 1999-11-29 2003-07-29 Applied Materials, Inc. Method for rounding corners and removing damaged outer surfaces of a trench
US6465350B1 (en) 1999-11-29 2002-10-15 Texas Instruments Incorporated Aluminum nitride thin film formation on integrated circuits
US6573194B2 (en) 1999-11-29 2003-06-03 Texas Instruments Incorporated Method of growing surface aluminum nitride on aluminum films with low energy barrier
US6572937B2 (en) 1999-11-30 2003-06-03 The Regents Of The University Of California Method for producing fluorinated diamond-like carbon films
US6342453B1 (en) 1999-12-03 2002-01-29 Applied Materials, Inc. Method for CVD process control for enhancing device performance
DE10060002B4 (de) 1999-12-07 2016-01-28 Komatsu Ltd. Vorrichtung zur Oberflächenbehandlung
JP2001164371A (ja) 1999-12-07 2001-06-19 Nec Corp プラズマｃｖｄ装置およびプラズマｃｖｄ成膜法
TW514996B (en) 1999-12-10 2002-12-21 Tokyo Electron Ltd Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
JP3659101B2 (ja) 1999-12-13 2005-06-15 富士ゼロックス株式会社 窒化物半導体素子及びその製造方法
JP4695238B2 (ja) 1999-12-14 2011-06-08 東京エレクトロン株式会社 圧力制御方法
US6277763B1 (en) 1999-12-16 2001-08-21 Applied Materials, Inc. Plasma processing of tungsten using a gas mixture comprising a fluorinated gas and oxygen
KR100385133B1 (ko) 1999-12-16 2003-05-22 엘지전자 주식회사 교환기의 셀 다중화/역다중화 시스템
US6225745B1 (en) 1999-12-17 2001-05-01 Axcelis Technologies, Inc. Dual plasma source for plasma process chamber
US6350697B1 (en) 1999-12-22 2002-02-26 Lam Research Corporation Method of cleaning and conditioning plasma reaction chamber
AU2577001A (en) 1999-12-22 2001-07-03 Tokyo Electron Limited Method and system for reducing damage to substrates during plasma processing with a resonator source
US6534809B2 (en) 1999-12-22 2003-03-18 Agilent Technologies, Inc. Hardmask designs for dry etching FeRAM capacitor stacks
US6238513B1 (en) 1999-12-28 2001-05-29 International Business Machines Corporation Wafer lift assembly
US6463782B1 (en) 2000-01-13 2002-10-15 Taiwan Semiconductor Manufacturing Co., Ltd. Self-centering calibration tool and method of calibrating
US6306246B1 (en) 2000-01-14 2001-10-23 Advanced Micro Devices, Inc. Dual window optical port for improved end point detection
KR100767762B1 (ko) 2000-01-18 2007-10-17 에이에스엠 저펜 가부시기가이샤 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치
US6477980B1 (en) 2000-01-20 2002-11-12 Applied Materials, Inc. Flexibly suspended gas distribution manifold for plasma chamber
US6772827B2 (en) 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
US6656831B1 (en) 2000-01-26 2003-12-02 Applied Materials, Inc. Plasma-enhanced chemical vapor deposition of a metal nitride layer
US6494959B1 (en) 2000-01-28 2002-12-17 Applied Materials, Inc. Process and apparatus for cleaning a silicon surface
JP3723712B2 (ja) 2000-02-10 2005-12-07 株式会社日立国際電気 基板処理装置及び基板処理方法
US6447636B1 (en) 2000-02-16 2002-09-10 Applied Materials, Inc. Plasma reactor with dynamic RF inductive and capacitive coupling control
US6743473B1 (en) 2000-02-16 2004-06-01 Applied Materials, Inc. Chemical vapor deposition of barriers from novel precursors
KR100378871B1 (ko) 2000-02-16 2003-04-07 주식회사 아펙스 라디칼 증착을 위한 샤워헤드장치
US6573030B1 (en) 2000-02-17 2003-06-03 Applied Materials, Inc. Method for depositing an amorphous carbon layer
KR100545034B1 (ko) 2000-02-21 2006-01-24 가부시끼가이샤 히다치 세이사꾸쇼 플라즈마처리장치 및 시료의 처리방법
US6319766B1 (en) 2000-02-22 2001-11-20 Applied Materials, Inc. Method of tantalum nitride deposition by tantalum oxide densification
US6350320B1 (en) 2000-02-22 2002-02-26 Applied Materials, Inc. Heater for processing chamber
EP1127957A1 (en) 2000-02-24 2001-08-29 Asm Japan K.K. A film forming apparatus having cleaning function
US6391788B1 (en) 2000-02-25 2002-05-21 Applied Materials, Inc. Two etchant etch method
US6958098B2 (en) 2000-02-28 2005-10-25 Applied Materials, Inc. Semiconductor wafer support lift-pin assembly
JP2001319885A (ja) 2000-03-02 2001-11-16 Hitachi Kokusai Electric Inc 基板処理装置及び半導体製造方法
JP3979791B2 (ja) 2000-03-08 2007-09-19 株式会社ルネサステクノロジ 半導体装置およびその製造方法
US6537707B1 (en) 2000-03-15 2003-03-25 Agilent Technologies, Inc. Two-stage roughing and controlled deposition rates for fabricating laser ablation masks
US7220937B2 (en) 2000-03-17 2007-05-22 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination
US6900596B2 (en) 2002-07-09 2005-05-31 Applied Materials, Inc. Capacitively coupled plasma reactor with uniform radial distribution of plasma
US7196283B2 (en) 2000-03-17 2007-03-27 Applied Materials, Inc. Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface
US6528751B1 (en) 2000-03-17 2003-03-04 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma
US6527968B1 (en) 2000-03-27 2003-03-04 Applied Materials Inc. Two-stage self-cleaning silicon etch process
JP3433721B2 (ja) 2000-03-28 2003-08-04 ティーディーケイ株式会社 ドライエッチング方法及び微細加工方法
JP2003529926A (ja) 2000-03-30 2003-10-07 東京エレクトロン株式会社 プラズマ処理システム内への調整可能なガス注入のための方法及び装置
JP4056195B2 (ja) 2000-03-30 2008-03-05 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2001284340A (ja) 2000-03-30 2001-10-12 Hitachi Kokusai Electric Inc 半導体製造装置および半導体装置の製造方法
DE10016340C1 (de) 2000-03-31 2001-12-06 Promos Technologies Inc Verfahren zur Herstellung von flaschenförmigen Tiefgräben zur Verwendung in Halbleitervorrichtungen
US6558564B1 (en) 2000-04-05 2003-05-06 Applied Materials Inc. Plasma energy control by inducing plasma instability
JP2001355074A (ja) 2000-04-10 2001-12-25 Sony Corp 無電解メッキ処理方法およびその装置
US7892974B2 (en) 2000-04-11 2011-02-22 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits
KR20010096229A (ko) 2000-04-18 2001-11-07 황 철 주 반도체 소자의 극박막 형성장치 및 그 형성방법
US6762129B2 (en) 2000-04-19 2004-07-13 Matsushita Electric Industrial Co., Ltd. Dry etching method, fabrication method for semiconductor device, and dry etching apparatus
JP2001308023A (ja) 2000-04-21 2001-11-02 Tokyo Electron Ltd 熱処理装置及び方法
US6329297B1 (en) 2000-04-21 2001-12-11 Applied Materials, Inc. Dilute remote plasma clean
US6502530B1 (en) 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
US6779481B2 (en) 2000-04-27 2004-08-24 Tokyo Electron Limited Electrical coupling between chamber parts in electronic device processing equipment
US6387207B1 (en) 2000-04-28 2002-05-14 Applied Materials, Inc. Integration of remote plasma generator with semiconductor processing chamber
JP2001313282A (ja) 2000-04-28 2001-11-09 Nec Corp ドライエッチング方法
US6458718B1 (en) 2000-04-28 2002-10-01 Asm Japan K.K. Fluorine-containing materials and processes
KR100367662B1 (ko) 2000-05-02 2003-01-10 주식회사 셈테크놀러지 하이퍼서멀 중성입자 발생 장치 및 이를 채용하는 중성입자 처리 장치
JP3662472B2 (ja) 2000-05-09 2005-06-22 エム・エフエスアイ株式会社 基板表面の処理方法
EP1211725A4 (en) 2000-05-10 2003-02-26 Ibiden Co Ltd ELECTROSTATIC CHUCK
US6679981B1 (en) 2000-05-11 2004-01-20 Applied Materials, Inc. Inductive plasma loop enhancing magnetron sputtering
WO2001088971A1 (fr) 2000-05-17 2001-11-22 Tokyo Electron Limited Dispositif de traitement et procede d'entretien du dispositif, mecanisme et procede de montage d'une piece du dispositif de traitement, et mecanisme de verrouillage et procede de blocage du mecanisme de verrouillage
US6364958B1 (en) 2000-05-24 2002-04-02 Applied Materials, Inc. Plasma assisted semiconductor substrate processing chamber having a plurality of ground path bridges
US6418874B1 (en) 2000-05-25 2002-07-16 Applied Materials, Inc. Toroidal plasma source for plasma processing
JP3448737B2 (ja) 2000-05-25 2003-09-22 住友重機械工業株式会社 ウエハーチャック用冷却板及びウエハーチャック
US6645585B2 (en) 2000-05-30 2003-11-11 Kyocera Corporation Container for treating with corrosive-gas and plasma and method for manufacturing the same
TW454429B (en) 2000-05-31 2001-09-11 Nanya Technology Corp Plasma generator
JP2002194547A (ja) 2000-06-08 2002-07-10 Applied Materials Inc アモルファスカーボン層の堆積方法
KR20010111058A (ko) 2000-06-09 2001-12-15 조셉 제이. 스위니 전체 영역 온도 제어 정전기 척 및 그 제조방법
US6603269B1 (en) 2000-06-13 2003-08-05 Applied Materials, Inc. Resonant chamber applicator for remote plasma source
US6509623B2 (en) 2000-06-15 2003-01-21 Newport Fab, Llc Microelectronic air-gap structures and methods of forming the same
KR100406174B1 (ko) 2000-06-15 2003-11-19 주식회사 하이닉스반도체 화학적 강화 화학 기상 증착 장비에 사용되는 샤워 헤드
US6391753B1 (en) 2000-06-20 2002-05-21 Advanced Micro Devices, Inc. Process for forming gate conductors
US6531069B1 (en) 2000-06-22 2003-03-11 International Business Machines Corporation Reactive Ion Etching chamber design for flip chip interconnections
US6645550B1 (en) 2000-06-22 2003-11-11 Applied Materials, Inc. Method of treating a substrate
KR100767294B1 (ko) 2000-06-23 2007-10-16 캐논 아네르바 가부시키가이샤 Ｃｖｄ장치
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
JP4371543B2 (ja) 2000-06-29 2009-11-25 日本電気株式会社 リモートプラズマｃｖｄ装置及び膜形成方法
US6303418B1 (en) 2000-06-30 2001-10-16 Chartered Semiconductor Manufacturing Ltd. Method of fabricating CMOS devices featuring dual gate structures and a high dielectric constant gate insulator layer
DE10032607B4 (de) 2000-07-07 2004-08-12 Leo Elektronenmikroskopie Gmbh Teilchenstrahlgerät mit einer im Ultrahochvakuum zu betreibenden Teilchenquelle und kaskadenförmige Pumpanordnung für ein solches Teilchenstrahlgerät
US6835278B2 (en) 2000-07-07 2004-12-28 Mattson Technology Inc. Systems and methods for remote plasma clean
US6440870B1 (en) 2000-07-12 2002-08-27 Applied Materials, Inc. Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
US6736987B1 (en) 2000-07-12 2004-05-18 Techbank Corporation Silicon etching apparatus using XeF2
US6794311B2 (en) 2000-07-14 2004-09-21 Applied Materials Inc. Method and apparatus for treating low k dielectric layers to reduce diffusion
KR100366623B1 (ko) 2000-07-18 2003-01-09 삼성전자 주식회사 반도체 기판 또는 ｌｃｄ 기판의 세정방법
US6821910B2 (en) 2000-07-24 2004-11-23 University Of Maryland, College Park Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
EP1248293A1 (en) 2000-07-25 2002-10-09 Ibiden Co., Ltd. Ceramic substrate for semiconductor manufacture/inspection apparatus, ceramic heater, electrostatic clampless holder, and substrate for wafer prober
US6764958B1 (en) 2000-07-28 2004-07-20 Applied Materials Inc. Method of depositing dielectric films
US6939434B2 (en) 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
US20020185226A1 (en) 2000-08-10 2002-12-12 Lea Leslie Michael Plasma processing apparatus
US6677242B1 (en) 2000-08-12 2004-01-13 Applied Materials Inc. Integrated shallow trench isolation approach
US6446572B1 (en) 2000-08-18 2002-09-10 Tokyo Electron Limited Embedded plasma source for plasma density improvement
US6412437B1 (en) 2000-08-18 2002-07-02 Micron Technology, Inc. Plasma enhanced chemical vapor deposition reactor and plasma enhanced chemical vapor deposition process
US6800830B2 (en) 2000-08-18 2004-10-05 Hitachi Kokusai Electric, Inc. Chemistry for boron diffusion barrier layer and method of application in semiconductor device fabrication
US6335288B1 (en) 2000-08-24 2002-01-01 Applied Materials, Inc. Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD
US6459066B1 (en) 2000-08-25 2002-10-01 Board Of Regents, The University Of Texas System Transmission line based inductively coupled plasma source with stable impedance
US6569774B1 (en) 2000-08-31 2003-05-27 Micron Technology, Inc. Method to eliminate striations and surface roughness caused by dry etch
US6372657B1 (en) 2000-08-31 2002-04-16 Micron Technology, Inc. Method for selective etching of oxides
JP2002075972A (ja) 2000-09-04 2002-03-15 Hitachi Ltd 半導体装置の製造方法
JP4484345B2 (ja) 2000-09-11 2010-06-16 東京エレクトロン株式会社 半導体装置及びその製造方法
US6465366B1 (en) 2000-09-12 2002-10-15 Applied Materials, Inc. Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers
US20020038791A1 (en) 2000-10-03 2002-04-04 Tomohiro Okumura Plasma processing method and apparatus
JP4717295B2 (ja) 2000-10-04 2011-07-06 株式会社半導体エネルギー研究所 ドライエッチング装置及びエッチング方法
US6461974B1 (en) 2000-10-06 2002-10-08 Lam Research Corporation High temperature tungsten etching process
DK200001497A (da) 2000-10-08 2002-04-09 Scanavo As Opbevaringsindretning for en databærer
JP2002115068A (ja) 2000-10-11 2002-04-19 Applied Materials Inc シャワーヘッド、基板処理装置および基板製造方法
KR100375102B1 (ko) 2000-10-18 2003-03-08 삼성전자주식회사 반도체 장치의 제조에서 화학 기상 증착 방법 및 이를수행하기 위한 장치
US6403491B1 (en) 2000-11-01 2002-06-11 Applied Materials, Inc. Etch method using a dielectric etch chamber with expanded process window
JP4602532B2 (ja) 2000-11-10 2010-12-22 東京エレクトロン株式会社 プラズマ処理装置
JP2002151473A (ja) 2000-11-13 2002-05-24 Tokyo Electron Ltd プラズマ処理装置及びその組立方法
US6610362B1 (en) 2000-11-20 2003-08-26 Intel Corporation Method of forming a carbon doped oxide layer on a substrate
KR100382725B1 (ko) 2000-11-24 2003-05-09 삼성전자주식회사 클러스터화된 플라즈마 장치에서의 반도체소자의 제조방법
AUPR179500A0 (en) 2000-11-30 2000-12-21 Saintech Pty Limited Ion source
US6291348B1 (en) 2000-11-30 2001-09-18 Advanced Micro Devices, Inc. Method of forming Cu-Ca-O thin films on Cu surfaces in a chemical solution and semiconductor device thereby formed
US9255329B2 (en) * 2000-12-06 2016-02-09 Novellus Systems, Inc. Modulated ion-induced atomic layer deposition (MII-ALD)
US6544340B2 (en) 2000-12-08 2003-04-08 Applied Materials, Inc. Heater with detachable ceramic top plate
US6448537B1 (en) 2000-12-11 2002-09-10 Eric Anton Nering Single-wafer process chamber thermal convection processes
US6692903B2 (en) 2000-12-13 2004-02-17 Applied Materials, Inc Substrate cleaning apparatus and method
US6461972B1 (en) 2000-12-22 2002-10-08 Lsi Logic Corporation Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow
US6533910B2 (en) 2000-12-29 2003-03-18 Lam Research Corporation Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof
US6537429B2 (en) 2000-12-29 2003-03-25 Lam Research Corporation Diamond coatings on reactor wall and method of manufacturing thereof
US6500772B2 (en) 2001-01-08 2002-12-31 International Business Machines Corporation Methods and materials for depositing films on semiconductor substrates
US20020124867A1 (en) 2001-01-08 2002-09-12 Apl Co., Ltd. Apparatus and method for surface cleaning using plasma
FR2819341B1 (fr) 2001-01-11 2003-06-27 St Microelectronics Sa Procede d'integration d'une cellule dram
US6879981B2 (en) 2001-01-16 2005-04-12 Corigin Ltd. Sharing live data with a non cooperative DBMS
US6849854B2 (en) 2001-01-18 2005-02-01 Saintech Pty Ltd. Ion source
US6358827B1 (en) 2001-01-19 2002-03-19 Taiwan Semiconductor Manufacturing Company Method of forming a squared-off, vertically oriented polysilicon spacer gate
JP4644943B2 (ja) 2001-01-23 2011-03-09 東京エレクトロン株式会社 処理装置
US6743732B1 (en) 2001-01-26 2004-06-01 Taiwan Semiconductor Manufacturing Company Organic low K dielectric etch with NH3 chemistry
US6893969B2 (en) 2001-02-12 2005-05-17 Lam Research Corporation Use of ammonia for etching organic low-k dielectrics
US6537733B2 (en) 2001-02-23 2003-03-25 Applied Materials, Inc. Method of depositing low dielectric constant silicon carbide layers
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
JP4657473B2 (ja) * 2001-03-06 2011-03-23 東京エレクトロン株式会社 プラズマ処理装置
US6348407B1 (en) 2001-03-15 2002-02-19 Chartered Semiconductor Manufacturing Inc. Method to improve adhesion of organic dielectrics in dual damascene interconnects
KR100423953B1 (ko) 2001-03-19 2004-03-24 디지웨이브 테크놀러지스 주식회사 화학기상증착장치
US6886491B2 (en) 2001-03-19 2005-05-03 Apex Co. Ltd. Plasma chemical vapor deposition apparatus
JP5013353B2 (ja) 2001-03-28 2012-08-29 隆 杉野 成膜方法及び成膜装置
US20020177321A1 (en) 2001-03-30 2002-11-28 Li Si Yi Plasma etching of silicon carbide
US6670278B2 (en) 2001-03-30 2003-12-30 Lam Research Corporation Method of plasma etching of silicon carbide
US7084070B1 (en) 2001-03-30 2006-08-01 Lam Research Corporation Treatment for corrosion in substrate processing
FR2823032B1 (fr) 2001-04-03 2003-07-11 St Microelectronics Sa Resonateur electromecanique a poutre vibrante
US20020144657A1 (en) 2001-04-05 2002-10-10 Chiang Tony P. ALD reactor employing electrostatic chuck
US6761796B2 (en) 2001-04-06 2004-07-13 Axcelis Technologies, Inc. Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing
JP3707394B2 (ja) 2001-04-06 2005-10-19 ソニー株式会社 無電解メッキ方法
JP2002319571A (ja) 2001-04-20 2002-10-31 Kawasaki Microelectronics Kk エッチング槽の前処理方法及び半導体装置の製造方法
US6846401B2 (en) 2001-04-20 2005-01-25 Corus Aluminium Walzprodukte Gmbh Method of plating and pretreating aluminium workpieces
US20030019428A1 (en) 2001-04-28 2003-01-30 Applied Materials, Inc. Chemical vapor deposition chamber
EP1391140B1 (en) 2001-04-30 2012-10-10 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
US7161121B1 (en) 2001-04-30 2007-01-09 Lam Research Corporation Electrostatic chuck having radial temperature control capability
US6914009B2 (en) 2001-05-07 2005-07-05 Applied Materials Inc Method of making small transistor lengths
US6740601B2 (en) 2001-05-11 2004-05-25 Applied Materials Inc. HDP-CVD deposition process for filling high aspect ratio gaps
US6974523B2 (en) 2001-05-16 2005-12-13 Lam Research Corporation Hollow anode plasma reactor and method
DE10222083B4 (de) 2001-05-18 2010-09-23 Samsung Electronics Co., Ltd., Suwon Isolationsverfahren für eine Halbleitervorrichtung
US20020170678A1 (en) 2001-05-18 2002-11-21 Toshio Hayashi Plasma processing apparatus
US6717189B2 (en) 2001-06-01 2004-04-06 Ebara Corporation Electroless plating liquid and semiconductor device
US6573606B2 (en) 2001-06-14 2003-06-03 International Business Machines Corporation Chip to wiring interface with single metal alloy layer applied to surface of copper interconnect
US20030010645A1 (en) 2001-06-14 2003-01-16 Mattson Technology, Inc. Barrier enhancement process for copper interconnects
US6506291B2 (en) 2001-06-14 2003-01-14 Applied Materials, Inc. Substrate support with multilevel heat transfer mechanism
US20060191637A1 (en) 2001-06-21 2006-08-31 John Zajac Etching Apparatus and Process with Thickness and Uniformity Control
US6685803B2 (en) 2001-06-22 2004-02-03 Applied Materials, Inc. Plasma treatment of processing gases
US6770166B1 (en) 2001-06-29 2004-08-03 Lam Research Corp. Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor
US20030000647A1 (en) 2001-06-29 2003-01-02 Applied Materials, Inc. Substrate processing chamber
US6596599B1 (en) 2001-07-16 2003-07-22 Taiwan Semiconductor Manufacturing Company Gate stack for high performance sub-micron CMOS devices
KR100400044B1 (ko) 2001-07-16 2003-09-29 삼성전자주식회사 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드
US20030029715A1 (en) 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
US6596654B1 (en) 2001-08-24 2003-07-22 Novellus Systems, Inc. Gap fill for high aspect ratio structures
US6846745B1 (en) 2001-08-03 2005-01-25 Novellus Systems, Inc. High-density plasma process for filling high aspect ratio structures
JP3914452B2 (ja) 2001-08-07 2007-05-16 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
US6984288B2 (en) 2001-08-08 2006-01-10 Lam Research Corporation Plasma processor in plasma confinement region within a vacuum chamber
WO2003017359A1 (en) 2001-08-13 2003-02-27 Ebara Corporation Semiconductor device and production method therefor, and plating solution
US20030038305A1 (en) 2001-08-21 2003-02-27 Wasshuber Christoph A. Method for manufacturing and structure of transistor with low-k spacer
US6762127B2 (en) 2001-08-23 2004-07-13 Yves Pierre Boiteux Etch process for dielectric materials comprising oxidized organo silane materials
US6753506B2 (en) 2001-08-23 2004-06-22 Axcelis Technologies System and method of fast ambient switching for rapid thermal processing
WO2003018867A1 (en) 2001-08-29 2003-03-06 Applied Materials, Inc. Semiconductor processing using an efficiently coupled gas source
JP4763235B2 (ja) 2001-08-29 2011-08-31 東京エレクトロン株式会社 プラズマ処理のための装置並びに方法
US6796314B1 (en) 2001-09-07 2004-09-28 Novellus Systems, Inc. Using hydrogen gas in a post-etch radio frequency-plasma contact cleaning process
US9708707B2 (en) * 2001-09-10 2017-07-18 Asm International N.V. Nanolayer deposition using bias power treatment
KR100441297B1 (ko) 2001-09-14 2004-07-23 주성엔지니어링(주) 리모트 플라즈마를 이용하는 ｃｃｐ형 ｐｅｃｖｄ장치
US20030054608A1 (en) 2001-09-17 2003-03-20 Vanguard International Semiconductor Corporation Method for forming shallow trench isolation in semiconductor device
US6555467B2 (en) 2001-09-28 2003-04-29 Sharp Laboratories Of America, Inc. Method of making air gaps copper interconnect
US6462372B1 (en) 2001-10-09 2002-10-08 Silicon-Based Technology Corp. Scaled stack-gate flash memory device
US6656837B2 (en) 2001-10-11 2003-12-02 Applied Materials, Inc. Method of eliminating photoresist poisoning in damascene applications
AU2002301252B2 (en) 2001-10-12 2007-12-20 Bayer Aktiengesellschaft Photovoltaic modules with a thermoplastic hot-melt adhesive layer and a process for their production
US6855906B2 (en) 2001-10-16 2005-02-15 Adam Alexander Brailove Induction plasma reactor
US20030072639A1 (en) 2001-10-17 2003-04-17 Applied Materials, Inc. Substrate support
KR100433091B1 (ko) 2001-10-23 2004-05-28 주식회사 하이닉스반도체 반도체소자의 도전배선 형성방법
JP3759895B2 (ja) 2001-10-24 2006-03-29 松下電器産業株式会社 エッチング方法
US7204886B2 (en) 2002-11-14 2007-04-17 Applied Materials, Inc. Apparatus and method for hybrid chemical processing
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US20080102203A1 (en) 2001-10-26 2008-05-01 Dien-Yeh Wu Vortex chamber lids for atomic layer deposition
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US20030087488A1 (en) 2001-11-07 2003-05-08 Tokyo Electron Limited Inductively coupled plasma source for improved process uniformity
JP4040284B2 (ja) 2001-11-08 2008-01-30 住友大阪セメント株式会社 プラズマ発生用電極内蔵型サセプタ及びその製造方法
JP2003158080A (ja) 2001-11-22 2003-05-30 Mitsubishi Electric Corp 半導体製造装置、半導体製造装置における堆積物除去方法、および半導体装置の製造方法
KR100443121B1 (ko) 2001-11-29 2004-08-04 삼성전자주식회사 반도체 공정의 수행 방법 및 반도체 공정 장치
US7017514B1 (en) 2001-12-03 2006-03-28 Novellus Systems, Inc. Method and apparatus for plasma optimization in water processing
US6794290B1 (en) 2001-12-03 2004-09-21 Novellus Systems, Inc. Method of chemical modification of structure topography
JP4392852B2 (ja) 2001-12-07 2010-01-06 東京エレクトロン株式会社 プラズマ処理装置に用いられる排気リング機構及びプラズマ処理装置
CN1254854C (zh) 2001-12-07 2006-05-03 东京毅力科创株式会社 绝缘膜氮化方法、半导体装置及其制造方法、基板处理装置和基板处理方法
US6905968B2 (en) 2001-12-12 2005-06-14 Applied Materials, Inc. Process for selectively etching dielectric layers
CN1605117B (zh) 2001-12-13 2010-05-12 应用材料股份有限公司 具有对氮化物肩部高度敏感性的自对准接触蚀刻
JP3969081B2 (ja) 2001-12-14 2007-08-29 東京エレクトロン株式会社 プラズマ処理装置
US6890850B2 (en) 2001-12-14 2005-05-10 Applied Materials, Inc. Method of depositing dielectric materials in damascene applications
US6605874B2 (en) 2001-12-19 2003-08-12 Intel Corporation Method of making semiconductor device using an interconnect
WO2003054912A1 (en) 2001-12-20 2003-07-03 Tokyo Electron Limited Method and apparatus comprising a magnetic filter for plasma processing a workpiece
US20030116087A1 (en) 2001-12-21 2003-06-26 Nguyen Anh N. Chamber hardware design for titanium nitride atomic layer deposition
US20030116439A1 (en) 2001-12-21 2003-06-26 International Business Machines Corporation Method for forming encapsulated metal interconnect structures in semiconductor integrated circuit devices
KR100442167B1 (ko) 2001-12-26 2004-07-30 주성엔지니어링(주) 자연산화막 제거방법
JP2003197615A (ja) 2001-12-26 2003-07-11 Tokyo Electron Ltd プラズマ処理装置およびそのクリーニング方法
US20030124842A1 (en) 2001-12-27 2003-07-03 Applied Materials, Inc. Dual-gas delivery system for chemical vapor deposition processes
KR100484258B1 (ko) 2001-12-27 2005-04-22 주식회사 하이닉스반도체 반도체 소자 제조 방법
US6828241B2 (en) 2002-01-07 2004-12-07 Applied Materials, Inc. Efficient cleaning by secondary in-situ activation of etch precursor from remote plasma source
US6942929B2 (en) 2002-01-08 2005-09-13 Nianci Han Process chamber having component with yttrium-aluminum coating
US6827815B2 (en) 2002-01-15 2004-12-07 Applied Materials, Inc. Showerhead assembly for a processing chamber
US6730175B2 (en) 2002-01-22 2004-05-04 Applied Materials, Inc. Ceramic substrate support
US6869880B2 (en) 2002-01-24 2005-03-22 Applied Materials, Inc. In situ application of etch back for improved deposition into high-aspect-ratio features
US20040060514A1 (en) 2002-01-25 2004-04-01 Applied Materials, Inc. A Delaware Corporation Gas distribution showerhead
US6866746B2 (en) 2002-01-26 2005-03-15 Applied Materials, Inc. Clamshell and small volume chamber with fixed substrate support
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US7138014B2 (en) 2002-01-28 2006-11-21 Applied Materials, Inc. Electroless deposition apparatus
TWI239794B (en) 2002-01-30 2005-09-11 Alps Electric Co Ltd Plasma processing apparatus and method
US7226504B2 (en) 2002-01-31 2007-06-05 Sharp Laboratories Of America, Inc. Method to form thick relaxed SiGe layer with trench structure
US6632325B2 (en) 2002-02-07 2003-10-14 Applied Materials, Inc. Article for use in a semiconductor processing chamber and method of fabricating same
US7048814B2 (en) 2002-02-08 2006-05-23 Applied Materials, Inc. Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus
US7033447B2 (en) 2002-02-08 2006-04-25 Applied Materials, Inc. Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus
US7479304B2 (en) 2002-02-14 2009-01-20 Applied Materials, Inc. Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate
US20080213496A1 (en) 2002-02-14 2008-09-04 Applied Materials, Inc. Method of coating semiconductor processing apparatus with protective yttrium-containing coatings
US6821348B2 (en) 2002-02-14 2004-11-23 3M Innovative Properties Company In-line deposition processes for circuit fabrication
US6656848B1 (en) 2002-02-22 2003-12-02 Scientific Systems Research Limited Plasma chamber conditioning
JP3921234B2 (ja) 2002-02-28 2007-05-30 キヤノンアネルバ株式会社 表面処理装置及びその製造方法
US6677167B2 (en) 2002-03-04 2004-01-13 Hitachi High-Technologies Corporation Wafer processing apparatus and a wafer stage and a wafer processing method
US6646233B2 (en) 2002-03-05 2003-11-11 Hitachi High-Technologies Corporation Wafer stage for wafer processing apparatus and wafer processing method
US20060252265A1 (en) 2002-03-06 2006-11-09 Guangxiang Jin Etching high-kappa dielectric materials with good high-kappa foot control and silicon recess control
US6730355B2 (en) 2002-03-06 2004-05-04 Micron Technology, Inc. Chemical vapor deposition method of forming a material over at least two substrates
US20030168174A1 (en) 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system
US7252011B2 (en) 2002-03-11 2007-08-07 Mks Instruments, Inc. Surface area deposition trap
JP3813562B2 (ja) 2002-03-15 2006-08-23 富士通株式会社 半導体装置及びその製造方法
US7256370B2 (en) 2002-03-15 2007-08-14 Steed Technology, Inc. Vacuum thermal annealer
US20040003828A1 (en) 2002-03-21 2004-01-08 Jackson David P. Precision surface treatments using dense fluids and a plasma
US6913651B2 (en) 2002-03-22 2005-07-05 Blue29, Llc Apparatus and method for electroless deposition of materials on semiconductor substrates
JP4053326B2 (ja) 2002-03-27 2008-02-27 東芝松下ディスプレイテクノロジー株式会社 薄膜トランジスタの製造方法
US6883733B1 (en) 2002-03-28 2005-04-26 Novellus Systems, Inc. Tapered post, showerhead design to improve mixing on dual plenum showerheads
JP4330315B2 (ja) 2002-03-29 2009-09-16 東京エレクトロン株式会社 プラズマ処理装置
US6541397B1 (en) 2002-03-29 2003-04-01 Applied Materials, Inc. Removable amorphous carbon CMP stop
US6843858B2 (en) 2002-04-02 2005-01-18 Applied Materials, Inc. Method of cleaning a semiconductor processing chamber
US20030190426A1 (en) 2002-04-03 2003-10-09 Deenesh Padhi Electroless deposition method
US6921556B2 (en) 2002-04-12 2005-07-26 Asm Japan K.K. Method of film deposition using single-wafer-processing type CVD
US6616967B1 (en) 2002-04-15 2003-09-09 Texas Instruments Incorporated Method to achieve continuous hydrogen saturation in sparingly used electroless nickel plating process
US6897532B1 (en) 2002-04-15 2005-05-24 Cypress Semiconductor Corp. Magnetic tunneling junction configuration and a method for making the same
US6818562B2 (en) 2002-04-19 2004-11-16 Applied Materials Inc Method and apparatus for tuning an RF matching network in a plasma enhanced semiconductor wafer processing system
US7013834B2 (en) 2002-04-19 2006-03-21 Nordson Corporation Plasma treatment system
KR100448714B1 (ko) 2002-04-24 2004-09-13 삼성전자주식회사 다층 나노라미네이트 구조를 갖는 반도체 장치의 절연막및 그의 형성방법
JP3773189B2 (ja) 2002-04-24 2006-05-10 独立行政法人科学技術振興機構 窓型プローブ、プラズマ監視装置、及び、プラズマ処理装置
US6794889B2 (en) 2002-04-26 2004-09-21 Agilent Technologies, Inc. Unified apparatus and method to assure probe card-to-wafer parallelism in semiconductor automatic wafer test, probe card measurement systems, and probe card manufacturing
US6528409B1 (en) 2002-04-29 2003-03-04 Advanced Micro Devices, Inc. Interconnect structure formed in porous dielectric material with minimized degradation and electromigration
US6908862B2 (en) 2002-05-03 2005-06-21 Applied Materials, Inc. HDP-CVD dep/etch/dep process for improved deposition into high aspect ratio features
JP2003324072A (ja) 2002-05-07 2003-11-14 Nec Electronics Corp 半導体製造装置
TW538497B (en) 2002-05-16 2003-06-21 Nanya Technology Corp Method to form a bottle-shaped trench
US20030215570A1 (en) 2002-05-16 2003-11-20 Applied Materials, Inc. Deposition of silicon nitride
US6825051B2 (en) 2002-05-17 2004-11-30 Asm America, Inc. Plasma etch resistant coating and process
JP2003338491A (ja) 2002-05-21 2003-11-28 Mitsubishi Electric Corp プラズマ処理装置および半導体装置の製造方法
US6500728B1 (en) 2002-05-24 2002-12-31 Taiwan Semiconductor Manufacturing Company Shallow trench isolation (STI) module to improve contact etch process window
TW535991U (en) 2002-05-24 2003-06-01 Winbond Electronics Corp Barrier device
US6673200B1 (en) 2002-05-30 2004-01-06 Lsi Logic Corporation Method of reducing process plasma damage using optical spectroscopy
US20030224217A1 (en) 2002-05-31 2003-12-04 Applied Materials, Inc. Metal nitride formation
KR100434110B1 (ko) 2002-06-04 2004-06-04 삼성전자주식회사 반도체 장치의 제조방법
US20030230385A1 (en) 2002-06-13 2003-12-18 Applied Materials, Inc. Electro-magnetic configuration for uniformity enhancement in a dual chamber plasma processing system
KR101019190B1 (ko) 2002-06-14 2011-03-04 세키스이가가쿠 고교가부시키가이샤 산화막 형성 방법 및 산화막 형성 장치
US6924191B2 (en) 2002-06-20 2005-08-02 Applied Materials, Inc. Method for fabricating a gate structure of a field effect transistor
US7686918B2 (en) 2002-06-21 2010-03-30 Tokyo Electron Limited Magnetron plasma processing apparatus
US7311797B2 (en) 2002-06-27 2007-12-25 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
DE10229037A1 (de) 2002-06-28 2004-01-29 Robert Bosch Gmbh Vorrichtung und Verfahren zur Erzeugung von Chlortrifluorid und Anlage zur Ätzung von Halbleitersubstraten mit dieser Vorrichtung
US20040072446A1 (en) 2002-07-02 2004-04-15 Applied Materials, Inc. Method for fabricating an ultra shallow junction of a field effect transistor
US6767844B2 (en) 2002-07-03 2004-07-27 Taiwan Semiconductor Manufacturing Co., Ltd Plasma chamber equipped with temperature-controlled focus ring and method of operating
US6838125B2 (en) 2002-07-10 2005-01-04 Applied Materials, Inc. Method of film deposition using activated precursor gases
US7357138B2 (en) 2002-07-18 2008-04-15 Air Products And Chemicals, Inc. Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
US7988398B2 (en) 2002-07-22 2011-08-02 Brooks Automation, Inc. Linear substrate transport apparatus
US6826451B2 (en) 2002-07-29 2004-11-30 Asml Holding N.V. Lithography tool having a vacuum reticle library coupled to a vacuum chamber
US6818561B1 (en) 2002-07-30 2004-11-16 Advanced Micro Devices, Inc. Control methodology using optical emission spectroscopy derived data, system for performing same
JP2006509999A (ja) 2002-08-02 2006-03-23 イー エイ フィシオネ インストルメンツ インコーポレーテッド 顕微鏡の試料調製方法及び装置
US20040058293A1 (en) 2002-08-06 2004-03-25 Tue Nguyen Assembly line processing system
US20060040055A1 (en) 2002-08-06 2006-02-23 Tegal Corporation Method and system for sequential processing in a two-compartment chamber
US6921555B2 (en) 2002-08-06 2005-07-26 Tegal Corporation Method and system for sequential processing in a two-compartment chamber
US20060046412A1 (en) 2002-08-06 2006-03-02 Tegal Corporation Method and system for sequential processing in a two-compartment chamber
JP2005536042A (ja) 2002-08-08 2005-11-24 トリコン テクノロジーズ リミティド シャワーヘッドの改良
JP3861036B2 (ja) 2002-08-09 2006-12-20 三菱重工業株式会社 プラズマｃｖｄ装置
US7541270B2 (en) 2002-08-13 2009-06-02 Micron Technology, Inc. Methods for forming openings in doped silicon dioxide
US20040033677A1 (en) 2002-08-14 2004-02-19 Reza Arghavani Method and apparatus to prevent lateral oxidation in a transistor utilizing an ultra thin oxygen-diffusion barrier
US7192486B2 (en) 2002-08-15 2007-03-20 Applied Materials, Inc. Clog-resistant gas delivery system
CN1495531B (zh) 2002-08-23 2010-05-26 Asml荷兰有限公司 光刻投射装置及用于所述装置中的粒子屏障
US6781173B2 (en) 2002-08-29 2004-08-24 Micron Technology, Inc. MRAM sense layer area control
US6946033B2 (en) 2002-09-16 2005-09-20 Applied Materials Inc. Heated gas distribution plate for a processing chamber
JP3991315B2 (ja) 2002-09-17 2007-10-17 キヤノンアネルバ株式会社 薄膜形成装置及び方法
JP3832409B2 (ja) 2002-09-18 2006-10-11 住友電気工業株式会社 ウエハー保持体及び半導体製造装置
US7335609B2 (en) 2004-08-27 2008-02-26 Applied Materials, Inc. Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials
JP4260450B2 (ja) 2002-09-20 2009-04-30 東京エレクトロン株式会社 真空処理装置における静電チャックの製造方法
US7166200B2 (en) 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US20070051471A1 (en) 2002-10-04 2007-03-08 Applied Materials, Inc. Methods and apparatus for stripping
KR100500852B1 (ko) 2002-10-10 2005-07-12 최대규 원격 플라즈마 발생기
US6991959B2 (en) 2002-10-10 2006-01-31 Asm Japan K.K. Method of manufacturing silicon carbide film
JP4606713B2 (ja) 2002-10-17 2011-01-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
TW587139B (en) 2002-10-18 2004-05-11 Winbond Electronics Corp Gas distribution system and method for the plasma gas in the chamber
US6699380B1 (en) 2002-10-18 2004-03-02 Applied Materials Inc. Modular electrochemical processing system
US7628897B2 (en) 2002-10-23 2009-12-08 Applied Materials, Inc. Reactive ion etching for semiconductor device feature topography modification
US6802944B2 (en) 2002-10-23 2004-10-12 Applied Materials, Inc. High density plasma CVD process for gapfill into high aspect ratio features
US6853043B2 (en) 2002-11-04 2005-02-08 Applied Materials, Inc. Nitrogen-free antireflective coating for use with photolithographic patterning
JP2004165317A (ja) 2002-11-12 2004-06-10 Renesas Technology Corp 半導体装置およびその製造方法
KR100862658B1 (ko) 2002-11-15 2008-10-10 삼성전자주식회사 반도체 처리 시스템의 가스 주입 장치
US6861332B2 (en) 2002-11-21 2005-03-01 Intel Corporation Air gap interconnect method
US6902628B2 (en) 2002-11-25 2005-06-07 Applied Materials, Inc. Method of cleaning a coated process chamber component
US6713873B1 (en) 2002-11-27 2004-03-30 Intel Corporation Adhesion between dielectric materials
JP2004179426A (ja) 2002-11-27 2004-06-24 Tokyo Electron Ltd 基板処理装置のクリーニング方法
TW561068B (en) 2002-11-29 2003-11-11 Au Optronics Corp Nozzle head with excellent corrosion resistance for dry etching process and anti-corrosion method thereof
US7347901B2 (en) 2002-11-29 2008-03-25 Tokyo Electron Limited Thermally zoned substrate holder assembly
US7396773B1 (en) 2002-12-06 2008-07-08 Cypress Semiconductor Company Method for cleaning a gate stack
US20040118519A1 (en) 2002-12-20 2004-06-24 Applied Materials, Inc. Blocker plate bypass design to improve clean rate at the edge of the chamber
US20040118344A1 (en) 2002-12-20 2004-06-24 Lam Research Corporation System and method for controlling plasma with an adjustable coupling to ground circuit
DE10260352A1 (de) 2002-12-20 2004-07-15 Infineon Technologies Ag Verfahren zum Herstellen einer Kondensatoranordnung und Kondensatoranordnung
US6806949B2 (en) 2002-12-31 2004-10-19 Tokyo Electron Limited Monitoring material buildup on system components by optical emission
KR100964398B1 (ko) 2003-01-03 2010-06-17 삼성전자주식회사 유도결합형 안테나 및 이를 채용한 플라즈마 처리장치
US6720213B1 (en) 2003-01-15 2004-04-13 International Business Machines Corporation Low-K gate spacers by fluorine implantation
US6808748B2 (en) 2003-01-23 2004-10-26 Applied Materials, Inc. Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology
US7500445B2 (en) 2003-01-27 2009-03-10 Applied Materials, Inc. Method and apparatus for cleaning a CVD chamber
US7316761B2 (en) 2003-02-03 2008-01-08 Applied Materials, Inc. Apparatus for uniformly etching a dielectric layer
US7205248B2 (en) 2003-02-04 2007-04-17 Micron Technology, Inc. Method of eliminating residual carbon from flowable oxide fill
US7078351B2 (en) 2003-02-10 2006-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist intensive patterning and processing
US6982175B2 (en) 2003-02-14 2006-01-03 Unaxis Usa Inc. End point detection in time division multiplexed etch processes
US20060137613A1 (en) 2004-01-27 2006-06-29 Shigeru Kasai Plasma generating apparatus, plasma generating method and remote plasma processing apparatus
CN101457338B (zh) 2003-02-14 2011-04-27 应用材料股份有限公司 利用含氢自由基清洁自生氧化物的方法和设备
US20040195208A1 (en) 2003-02-15 2004-10-07 Pavel Elizabeth G. Method and apparatus for performing hydrogen optical emission endpoint detection for photoresist strip and residue removal
US6969619B1 (en) 2003-02-18 2005-11-29 Novellus Systems, Inc. Full spectrum endpoint detection
TW200423185A (en) 2003-02-19 2004-11-01 Matsushita Electric Ind Co Ltd Method of introducing impurity
US20040163590A1 (en) 2003-02-24 2004-08-26 Applied Materials, Inc. In-situ health check of liquid injection vaporizer
US7212078B2 (en) 2003-02-25 2007-05-01 Tokyo Electron Limited Method and assembly for providing impedance matching network and network assembly
US20040163601A1 (en) 2003-02-26 2004-08-26 Masanori Kadotani Plasma processing apparatus
DE10308870B4 (de) 2003-02-28 2006-07-27 Austriamicrosystems Ag Bipolartransistor mit verbessertem Basis-Emitter-Übergang und Verfahren zur Herstellung
US6913992B2 (en) 2003-03-07 2005-07-05 Applied Materials, Inc. Method of modifying interlayer adhesion
CN100388434C (zh) 2003-03-12 2008-05-14 东京毅力科创株式会社 半导体处理用的基板保持结构和等离子体处理装置
US6951821B2 (en) 2003-03-17 2005-10-04 Tokyo Electron Limited Processing system and method for chemically treating a substrate
US20040182315A1 (en) 2003-03-17 2004-09-23 Tokyo Electron Limited Reduced maintenance chemical oxide removal (COR) processing system
JP2004296467A (ja) 2003-03-25 2004-10-21 Hitachi Kokusai Electric Inc 基板処理装置
US20040187787A1 (en) 2003-03-31 2004-09-30 Dawson Keith E. Substrate support having temperature controlled substrate support surface
US6844929B2 (en) 2003-04-09 2005-01-18 Phase Shift Technology Apparatus and method for holding and transporting thin opaque plates
US7037376B2 (en) 2003-04-11 2006-05-02 Applied Materials Inc. Backflush chamber clean
WO2004093178A1 (ja) 2003-04-11 2004-10-28 Hoya Corporation クロム系薄膜のエッチング方法及びフォトマスクの製造方法
US7126225B2 (en) 2003-04-15 2006-10-24 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for manufacturing a semiconductor wafer with reduced delamination and peeling
US6942753B2 (en) 2003-04-16 2005-09-13 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
US6872909B2 (en) 2003-04-16 2005-03-29 Applied Science And Technology, Inc. Toroidal low-field reactive gas and plasma source having a dielectric vacuum vessel
TWI227565B (en) 2003-04-16 2005-02-01 Au Optronics Corp Low temperature poly-Si thin film transistor and method of manufacturing the same
US20040211357A1 (en) 2003-04-24 2004-10-28 Gadgil Pradad N. Method of manufacturing a gap-filled structure of a semiconductor device
JP5404984B2 (ja) 2003-04-24 2014-02-05 東京エレクトロン株式会社 プラズマモニタリング方法、プラズマモニタリング装置及びプラズマ処理装置
US6830624B2 (en) 2003-05-02 2004-12-14 Applied Materials, Inc. Blocker plate by-pass for remote plasma clean
US7008877B2 (en) * 2003-05-05 2006-03-07 Unaxis Usa Inc. Etching of chromium layers on photomasks utilizing high density plasma and low frequency RF bias
US6903511B2 (en) 2003-05-06 2005-06-07 Zond, Inc. Generation of uniformly-distributed plasma
DE10320472A1 (de) 2003-05-08 2004-12-02 Kolektor D.O.O. Plasmabehandlung zur Reinigung von Kupfer oder Nickel
KR100965758B1 (ko) 2003-05-22 2010-06-24 주성엔지니어링(주) 액정표시장치용 플라즈마 강화 화학기상증착 장치의샤워헤드 어셈블리
US8580076B2 (en) 2003-05-22 2013-11-12 Lam Research Corporation Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith
US6713835B1 (en) 2003-05-22 2004-03-30 International Business Machines Corporation Method for manufacturing a multi-level interconnect structure
US7045020B2 (en) 2003-05-22 2006-05-16 Applied Materials, Inc. Cleaning a component of a process chamber
US20040237897A1 (en) 2003-05-27 2004-12-02 Hiroji Hanawa High-Frequency electrostatically shielded toroidal plasma and radical source
WO2004107394A2 (ja) 2003-05-27 2004-12-09 Matsushita Electric Works, Ltd. プラズマ処理装置、プラズマ生成用の反応器の製造方法、及びプラズマ処理方法
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7067432B2 (en) 2003-06-26 2006-06-27 Applied Materials, Inc. Methodology for in-situ and real-time chamber condition monitoring and process recovery during plasma processing
KR100853388B1 (ko) 2003-06-27 2008-08-21 도쿄엘렉트론가부시키가이샤 클리닝 방법 및 기판 처리 방법
US7993460B2 (en) 2003-06-30 2011-08-09 Lam Research Corporation Substrate support having dynamic temperature control
US7151277B2 (en) 2003-07-03 2006-12-19 The Regents Of The University Of California Selective etching of silicon carbide films
JP4245996B2 (ja) 2003-07-07 2009-04-02 株式会社荏原製作所 無電解めっきによるキャップ膜の形成方法およびこれに用いる装置
US7368392B2 (en) 2003-07-10 2008-05-06 Applied Materials, Inc. Method of fabricating a gate structure of a field effect transistor having a metal-containing gate electrode
US6995073B2 (en) 2003-07-16 2006-02-07 Intel Corporation Air gap integration
JP3866694B2 (ja) 2003-07-30 2007-01-10 株式会社日立ハイテクノロジーズ Ｌｓｉデバイスのエッチング方法および装置
US7256134B2 (en) 2003-08-01 2007-08-14 Applied Materials, Inc. Selective etching of carbon-doped low-k dielectrics
JP4239750B2 (ja) 2003-08-13 2009-03-18 セイコーエプソン株式会社 マイクロレンズ及びマイクロレンズの製造方法、光学装置、光伝送装置、レーザプリンタ用ヘッド、並びにレーザプリンタ
US20050035455A1 (en) 2003-08-14 2005-02-17 Chenming Hu Device with low-k dielectric in close proximity thereto and its method of fabrication
US7182816B2 (en) 2003-08-18 2007-02-27 Tokyo Electron Limited Particulate reduction using temperature-controlled chamber shield
US7361865B2 (en) 2003-08-27 2008-04-22 Kyocera Corporation Heater for heating a wafer and method for fabricating the same
US7521000B2 (en) 2003-08-28 2009-04-21 Applied Materials, Inc. Process for etching photomasks
US6903031B2 (en) 2003-09-03 2005-06-07 Applied Materials, Inc. In-situ-etch-assisted HDP deposition using SiF4 and hydrogen
EP1667217A1 (en) 2003-09-03 2006-06-07 Tokyo Electron Limited Gas treatment device and heat readiting method
US7282244B2 (en) 2003-09-05 2007-10-16 General Electric Company Replaceable plate expanded thermal plasma apparatus and method
KR100518594B1 (ko) 2003-09-09 2005-10-04 삼성전자주식회사 로컬 ｓｏｎｏｓ형 비휘발성 메모리 소자 및 그 제조방법
US7030034B2 (en) 2003-09-18 2006-04-18 Micron Technology, Inc. Methods of etching silicon nitride substantially selectively relative to an oxide of aluminum
US6967405B1 (en) 2003-09-24 2005-11-22 Yongsik Yu Film for copper diffusion barrier
JP2005101141A (ja) 2003-09-24 2005-04-14 Renesas Technology Corp 半導体集積回路装置およびその製造方法
US7071532B2 (en) 2003-09-30 2006-07-04 International Business Machines Corporation Adjustable self-aligned air gap dielectric for low capacitance wiring
US7371688B2 (en) 2003-09-30 2008-05-13 Air Products And Chemicals, Inc. Removal of transition metal ternary and/or quaternary barrier materials from a substrate
KR20030083663A (ko) 2003-10-04 2003-10-30 삼영플랜트주식회사 건설폐기물로부터 시멘트 페이스트 및 모르타르가 제거된재생골재 및 모래를 생산하는 방법 및 장치
JP4399227B2 (ja) 2003-10-06 2010-01-13 株式会社フジキン チャンバの内圧制御装置及び内圧被制御式チャンバ
US7408225B2 (en) 2003-10-09 2008-08-05 Asm Japan K.K. Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms
US20050087517A1 (en) 2003-10-09 2005-04-28 Andrew Ott Adhesion between carbon doped oxide and etch stop layers
US7581511B2 (en) 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
US7125792B2 (en) 2003-10-14 2006-10-24 Infineon Technologies Ag Dual damascene structure and method
US7465358B2 (en) 2003-10-15 2008-12-16 Applied Materials, Inc. Measurement techniques for controlling aspects of a electroless deposition process
US20070111519A1 (en) 2003-10-15 2007-05-17 Applied Materials, Inc. Integrated electroless deposition system
JP2005129666A (ja) 2003-10-22 2005-05-19 Canon Inc 処理方法及び装置
JP4306403B2 (ja) 2003-10-23 2009-08-05 東京エレクトロン株式会社 シャワーヘッド構造及びこれを用いた成膜装置
JP2005129688A (ja) 2003-10-23 2005-05-19 Hitachi Ltd 半導体装置の製造方法
US7053994B2 (en) 2003-10-28 2006-05-30 Lam Research Corporation Method and apparatus for etch endpoint detection
KR100561848B1 (ko) 2003-11-04 2006-03-16 삼성전자주식회사 헬리컬 공진기형 플라즈마 처리 장치
US7709392B2 (en) 2003-11-05 2010-05-04 Taiwan Semiconductor Manufacturing Co., Ltd. Low K dielectric surface damage control
JP4273932B2 (ja) 2003-11-07 2009-06-03 株式会社島津製作所 表面波励起プラズマｃｖｄ装置
US7461614B2 (en) 2003-11-12 2008-12-09 Tokyo Electron Limited Method and apparatus for improved baffle plate
US20050103267A1 (en) 2003-11-14 2005-05-19 Hur Gwang H. Flat panel display manufacturing apparatus
JP4393844B2 (ja) 2003-11-19 2010-01-06 東京エレクトロン株式会社 プラズマ成膜装置及びプラズマ成膜方法
US20050145341A1 (en) 2003-11-19 2005-07-07 Masaki Suzuki Plasma processing apparatus
JP4256763B2 (ja) 2003-11-19 2009-04-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
KR100558925B1 (ko) 2003-11-24 2006-03-10 세메스 주식회사 웨이퍼 에지 식각 장치
US20050109276A1 (en) 2003-11-25 2005-05-26 Applied Materials, Inc. Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber
US20050112876A1 (en) 2003-11-26 2005-05-26 Chih-Ta Wu Method to form a robust TiCI4 based CVD TiN film
US7431966B2 (en) 2003-12-09 2008-10-07 Micron Technology, Inc. Atomic layer deposition method of depositing an oxide on a substrate
US7081407B2 (en) 2003-12-16 2006-07-25 Lam Research Corporation Method of preventing damage to porous low-k materials during resist stripping
KR100546401B1 (ko) 2003-12-17 2006-01-26 삼성전자주식회사 자기정렬된 전하트랩층을 포함하는 반도체 메모리 소자 및그 제조방법
US7220497B2 (en) 2003-12-18 2007-05-22 Lam Research Corporation Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components
US6958286B2 (en) 2004-01-02 2005-10-25 International Business Machines Corporation Method of preventing surface roughening during hydrogen prebake of SiGe substrates
US6893967B1 (en) 2004-01-13 2005-05-17 Advanced Micro Devices, Inc. L-shaped spacer incorporating or patterned using amorphous carbon or CVD organic materials
US6852584B1 (en) 2004-01-14 2005-02-08 Tokyo Electron Limited Method of trimming a gate electrode structure
US7361605B2 (en) 2004-01-20 2008-04-22 Mattson Technology, Inc. System and method for removal of photoresist and residues following contact etch with a stop layer present
US20060033678A1 (en) 2004-01-26 2006-02-16 Applied Materials, Inc. Integrated electroless deposition system
US7012027B2 (en) 2004-01-27 2006-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Zirconium oxide and hafnium oxide etching using halogen containing chemicals
US7064078B2 (en) 2004-01-30 2006-06-20 Applied Materials Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme
WO2005076336A1 (ja) 2004-02-09 2005-08-18 Tadahiro Ohmi 半導体装置の製造方法および絶縁膜のエッチング方法
US7291550B2 (en) 2004-02-13 2007-11-06 Chartered Semiconductor Manufacturing Ltd. Method to form a contact hole
US7015415B2 (en) 2004-02-18 2006-03-21 Dry Plasma Systems, Inc. Higher power density downstream plasma
JP4707959B2 (ja) 2004-02-20 2011-06-22 日本エー・エス・エム株式会社 シャワープレート、プラズマ処理装置及びプラズマ処理方法
US20060054280A1 (en) 2004-02-23 2006-03-16 Jang Geun-Ha Apparatus of manufacturing display substrate and showerhead assembly equipped therein
JP4698251B2 (ja) 2004-02-24 2011-06-08 アプライド マテリアルズ インコーポレイテッド 可動又は柔軟なシャワーヘッド取り付け
US20060051966A1 (en) 2004-02-26 2006-03-09 Applied Materials, Inc. In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
US20070123051A1 (en) 2004-02-26 2007-05-31 Reza Arghavani Oxide etch with nh4-nf3 chemistry
US20050230350A1 (en) 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US7780793B2 (en) 2004-02-26 2010-08-24 Applied Materials, Inc. Passivation layer formation by plasma clean process to reduce native oxide growth
JP4879159B2 (ja) 2004-03-05 2012-02-22 アプライド マテリアルズ インコーポレイテッド アモルファス炭素膜堆積のためのｃｖｄプロセス
US8037896B2 (en) 2004-03-09 2011-10-18 Mks Instruments, Inc. Pressure regulation in remote zones
US7196342B2 (en) 2004-03-10 2007-03-27 Cymer, Inc. Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source
US20060081337A1 (en) 2004-03-12 2006-04-20 Shinji Himori Capacitive coupling plasma processing apparatus
US7682985B2 (en) 2004-03-17 2010-03-23 Lam Research Corporation Dual doped polysilicon and silicon germanium etch
US7109521B2 (en) 2004-03-18 2006-09-19 Cree, Inc. Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
US7582555B1 (en) 2005-12-29 2009-09-01 Novellus Systems, Inc. CVD flowable gap fill
US7244474B2 (en) 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US7695590B2 (en) 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US7291360B2 (en) 2004-03-26 2007-11-06 Applied Materials, Inc. Chemical vapor deposition plasma process using plural ion shower grids
US7697260B2 (en) 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
US7358192B2 (en) 2004-04-08 2008-04-15 Applied Materials, Inc. Method and apparatus for in-situ film stack processing
JP4761723B2 (ja) 2004-04-12 2011-08-31 日本碍子株式会社 基板加熱装置
US7273526B2 (en) 2004-04-15 2007-09-25 Asm Japan K.K. Thin-film deposition apparatus
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US7785672B2 (en) 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
US7018941B2 (en) 2004-04-21 2006-03-28 Applied Materials, Inc. Post treatment of low k dielectric films
TWI249774B (en) 2004-04-23 2006-02-21 Nanya Technology Corp Forming method of self-aligned contact for semiconductor device
JP3998003B2 (ja) 2004-04-23 2007-10-24 ソニー株式会社 プラズマエッチング法
US7115974B2 (en) 2004-04-27 2006-10-03 Taiwan Semiconductor Manfacturing Company, Ltd. Silicon oxycarbide and silicon carbonitride based materials for MOS devices
US20050238807A1 (en) 2004-04-27 2005-10-27 Applied Materials, Inc. Refurbishment of a coated chamber component
US20050241579A1 (en) 2004-04-30 2005-11-03 Russell Kidd Face shield to improve uniformity of blanket CVD processes
US7708859B2 (en) 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
US7449220B2 (en) 2004-04-30 2008-11-11 Oc Oerlikon Blazers Ag Method for manufacturing a plate-shaped workpiece
WO2005112092A2 (en) 2004-05-11 2005-11-24 Applied Materials, Inc. CARBON-DOPED-Si OXIDE ETCH USING H2 ADDITIVE IN FLUOROCARBON ETCH CHEMISTRY
US8074599B2 (en) 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US8328939B2 (en) 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
KR100580584B1 (ko) 2004-05-21 2006-05-16 삼성전자주식회사 리모트 플라즈마 발생 튜브의 표면 세정 방법과 이를이용하는 기판 처리 방법 및 기판 처리 장치
US7691686B2 (en) 2004-05-21 2010-04-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7049200B2 (en) 2004-05-25 2006-05-23 Applied Materials Inc. Method for forming a low thermal budget spacer
KR100624566B1 (ko) 2004-05-31 2006-09-19 주식회사 하이닉스반도체 커패시터 상부에 유동성 절연막을 갖는 반도체소자 및 그제조 방법
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
US20050274324A1 (en) 2004-06-04 2005-12-15 Tokyo Electron Limited Plasma processing apparatus and mounting unit thereof
US7651583B2 (en) 2004-06-04 2010-01-26 Tokyo Electron Limited Processing system and method for treating a substrate
US20050274396A1 (en) 2004-06-09 2005-12-15 Hong Shih Methods for wet cleaning quartz surfaces of components for plasma processing chambers
US7226852B1 (en) 2004-06-10 2007-06-05 Lam Research Corporation Preventing damage to low-k materials during resist stripping
US7430496B2 (en) 2004-06-16 2008-09-30 Tokyo Electron Limited Method and apparatus for using a pressure control system to monitor a plasma processing system
US7253107B2 (en) 2004-06-17 2007-08-07 Asm International N.V. Pressure control system
US7122949B2 (en) 2004-06-21 2006-10-17 Neocera, Inc. Cylindrical electron beam generating/triggering device and method for generation of electrons
US20050284573A1 (en) 2004-06-24 2005-12-29 Egley Fred D Bare aluminum baffles for resist stripping chambers
US7220687B2 (en) 2004-06-25 2007-05-22 Applied Materials, Inc. Method to improve water-barrier performance by changing film surface morphology
US20060005856A1 (en) 2004-06-29 2006-01-12 Applied Materials, Inc. Reduction of reactive gas attack on substrate heater
US20060000802A1 (en) 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
US8349128B2 (en) 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
US7097779B2 (en) 2004-07-06 2006-08-29 Tokyo Electron Limited Processing system and method for chemically treating a TERA layer
US20060165994A1 (en) 2004-07-07 2006-07-27 General Electric Company Protective coating on a substrate and method of making thereof
JP2006049817A (ja) 2004-07-07 2006-02-16 Showa Denko Kk プラズマ処理方法およびプラズマエッチング方法
JP2006024730A (ja) * 2004-07-08 2006-01-26 Sony Corp 半導体装置の製造方法
US7845309B2 (en) 2004-07-13 2010-12-07 Nordson Corporation Ultra high speed uniform plasma processing system
KR100614648B1 (ko) 2004-07-15 2006-08-23 삼성전자주식회사 반도체 소자 제조에 사용되는 기판 처리 장치
US7767561B2 (en) 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
KR100584485B1 (ko) 2004-07-20 2006-05-29 동부일렉트로닉스 주식회사 반도체 소자의 금속 부식 방지 방법
US20060016783A1 (en) 2004-07-22 2006-01-26 Dingjun Wu Process for titanium nitride removal
JP4492947B2 (ja) 2004-07-23 2010-06-30 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4579611B2 (ja) 2004-07-26 2010-11-10 株式会社日立ハイテクノロジーズ ドライエッチング方法
US7217626B2 (en) 2004-07-26 2007-05-15 Texas Instruments Incorporated Transistor fabrication methods using dual sidewall spacers
US20060021703A1 (en) 2004-07-29 2006-02-02 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US7381291B2 (en) 2004-07-29 2008-06-03 Asm Japan K.K. Dual-chamber plasma processing apparatus
US7192863B2 (en) 2004-07-30 2007-03-20 Texas Instruments Incorporated Method of eliminating etch ridges in a dual damascene process
US7806077B2 (en) 2004-07-30 2010-10-05 Amarante Technologies, Inc. Plasma nozzle array for providing uniform scalable microwave plasma generation
US20060024954A1 (en) 2004-08-02 2006-02-02 Zhen-Cheng Wu Copper damascene barrier and capping layer
KR101309334B1 (ko) 2004-08-02 2013-09-16 비코 인스트루먼츠 인코포레이티드 화학적 기상 증착 반응기용 멀티 가스 분배 인젝터
JP4718141B2 (ja) 2004-08-06 2011-07-06 東京エレクトロン株式会社 薄膜形成方法及び薄膜形成装置
US20060032833A1 (en) 2004-08-10 2006-02-16 Applied Materials, Inc. Encapsulation of post-etch halogenic residue
US7247570B2 (en) 2004-08-19 2007-07-24 Micron Technology, Inc. Silicon pillars for vertical transistors
US20060043066A1 (en) 2004-08-26 2006-03-02 Kamp Thomas A Processes for pre-tapering silicon or silicon-germanium prior to etching shallow trenches
US20060042752A1 (en) 2004-08-30 2006-03-02 Rueger Neal R Plasma processing apparatuses and methods
WO2006026765A2 (en) 2004-09-01 2006-03-09 Axcelis Technologies, Inc. Plasma ashing process for increasing photoresist removal rate and plasma apparatus wuth cooling means
US7115525B2 (en) 2004-09-02 2006-10-03 Micron Technology, Inc. Method for integrated circuit fabrication using pitch multiplication
US7329576B2 (en) 2004-09-02 2008-02-12 Micron Technology, Inc. Double-sided container capacitors using a sacrificial layer
JP2006108629A (ja) 2004-09-10 2006-04-20 Toshiba Corp 半導体装置の製造方法
US20060292846A1 (en) 2004-09-17 2006-12-28 Pinto Gustavo A Material management in substrate processing
US7268084B2 (en) 2004-09-30 2007-09-11 Tokyo Electron Limited Method for treating a substrate
US7138767B2 (en) 2004-09-30 2006-11-21 Tokyo Electron Limited Surface wave plasma processing system and method of using
US7544251B2 (en) 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
US7244311B2 (en) 2004-10-13 2007-07-17 Lam Research Corporation Heat transfer system for improved semiconductor processing uniformity
US7148155B1 (en) 2004-10-26 2006-12-12 Novellus Systems, Inc. Sequential deposition/anneal film densification method
US7053003B2 (en) 2004-10-27 2006-05-30 Lam Research Corporation Photoresist conditioning with hydrogen ramping
JP2006128485A (ja) 2004-10-29 2006-05-18 Asm Japan Kk 半導体処理装置
US20060093756A1 (en) 2004-11-03 2006-05-04 Nagarajan Rajagopalan High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric CVD films
US20060097397A1 (en) 2004-11-10 2006-05-11 Russell Stephen W Method for forming a dual layer, low resistance metallization during the formation of a semiconductor device
US7618515B2 (en) 2004-11-15 2009-11-17 Tokyo Electron Limited Focus ring, plasma etching apparatus and plasma etching method
EP1662546A1 (en) 2004-11-25 2006-05-31 The European Community, represented by the European Commission Inductively coupled plasma processing apparatus
US7722737B2 (en) 2004-11-29 2010-05-25 Applied Materials, Inc. Gas distribution system for improved transient phase deposition
US7052553B1 (en) 2004-12-01 2006-05-30 Lam Research Corporation Wet cleaning of electrostatic chucks
US7256121B2 (en) 2004-12-02 2007-08-14 Texas Instruments Incorporated Contact resistance reduction by new barrier stack process
FR2878913B1 (fr) 2004-12-03 2007-01-19 Cit Alcatel Controle des pressions partielles de gaz pour optimisation de procede
JP2006193822A (ja) 2004-12-16 2006-07-27 Sharp Corp めっき装置、めっき方法、半導体装置、及び半導体装置の製造方法
US20060130971A1 (en) 2004-12-21 2006-06-22 Applied Materials, Inc. Apparatus for generating plasma by RF power
JP2006179693A (ja) 2004-12-22 2006-07-06 Shin Etsu Chem Co Ltd ヒータ付き静電チャック
JP4191137B2 (ja) 2004-12-24 2008-12-03 東京エレクトロン株式会社 基板処理装置のクリーニング方法
US7365016B2 (en) 2004-12-27 2008-04-29 Dalsa Semiconductor Inc. Anhydrous HF release of process for MEMS devices
KR100653722B1 (ko) 2005-01-05 2006-12-05 삼성전자주식회사 저유전막을 갖는 반도체소자의 제조방법
US7465953B1 (en) 2005-01-07 2008-12-16 Board Of Regents, The University Of Texas System Positioning of nanoparticles and fabrication of single election devices
US7253123B2 (en) 2005-01-10 2007-08-07 Applied Materials, Inc. Method for producing gate stack sidewall spacers
KR100610019B1 (ko) 2005-01-11 2006-08-08 삼성전자주식회사 플라즈마 분배장치 및 이를 구비하는 건식 스트리핑 장치
US20060162661A1 (en) 2005-01-22 2006-07-27 Applied Materials, Inc. Mixing energized and non-energized gases for silicon nitride deposition
US7829243B2 (en) 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication
JP4601439B2 (ja) 2005-02-01 2010-12-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
GB0502149D0 (en) 2005-02-02 2005-03-09 Boc Group Inc Method of operating a pumping system
US7341943B2 (en) 2005-02-08 2008-03-11 Taiwan Semiconductor Manufacturing Co., Ltd. Post etch copper cleaning using dry plasma
US20060183270A1 (en) 2005-02-14 2006-08-17 Tessera, Inc. Tools and methods for forming conductive bumps on microelectronic elements
JP4475136B2 (ja) 2005-02-18 2010-06-09 東京エレクトロン株式会社 処理システム、前処理装置及び記憶媒体
US7344912B1 (en) 2005-03-01 2008-03-18 Spansion Llc Method for patterning electrically conducting poly(phenyl acetylene) and poly(diphenyl acetylene)
JP4506677B2 (ja) 2005-03-11 2010-07-21 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
JP2006261217A (ja) 2005-03-15 2006-09-28 Canon Anelva Corp 薄膜形成方法
JP4518986B2 (ja) 2005-03-17 2010-08-04 東京エレクトロン株式会社 大気搬送室、被処理体の処理後搬送方法、プログラム及び記憶媒体
WO2006102318A2 (en) 2005-03-18 2006-09-28 Applied Materials, Inc. Electroless deposition process on a contact containing silicon or silicide
WO2006102180A2 (en) 2005-03-18 2006-09-28 Applied Materials, Inc. Contact metallization methods and processes
US7435454B2 (en) 2005-03-21 2008-10-14 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
US20060210723A1 (en) 2005-03-21 2006-09-21 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
KR100610465B1 (ko) 2005-03-25 2006-08-08 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US20060215347A1 (en) 2005-03-28 2006-09-28 Tokyo Electron Limited Processing apparatus and recording medium
US7442274B2 (en) 2005-03-28 2008-10-28 Tokyo Electron Limited Plasma etching method and apparatus therefor
KR100689826B1 (ko) 2005-03-29 2007-03-08 삼성전자주식회사 불소 함유된 화학적 식각 가스를 사용하는 고밀도 플라즈마화학기상증착 방법들 및 이를 채택하여 반도체 소자를제조하는 방법들
JP4860167B2 (ja) 2005-03-30 2012-01-25 東京エレクトロン株式会社 ロードロック装置，処理システム及び処理方法
US20060228889A1 (en) 2005-03-31 2006-10-12 Edelberg Erik A Methods of removing resist from substrates in resist stripping chambers
US7789962B2 (en) 2005-03-31 2010-09-07 Tokyo Electron Limited Device and method for controlling temperature of a mounting table, a program therefor, and a processing apparatus including same
JP2006303309A (ja) 2005-04-22 2006-11-02 Hitachi High-Technologies Corp プラズマ処理装置
US7288482B2 (en) 2005-05-04 2007-10-30 International Business Machines Corporation Silicon nitride etching methods
US7431856B2 (en) 2005-05-18 2008-10-07 National Research Council Of Canada Nano-tip fabrication by spatially controlled etching
KR100731164B1 (ko) 2005-05-19 2007-06-20 주식회사 피에조닉스 샤워헤드를 구비한 화학기상 증착 방법 및 장치
US20060266288A1 (en) 2005-05-27 2006-11-30 Applied Materials, Inc. High plasma utilization for remote plasma clean
JP4853857B2 (ja) 2005-06-15 2012-01-11 東京エレクトロン株式会社 基板の処理方法，コンピュータ読み取り可能な記録媒体及び基板処理装置
US20060286774A1 (en) 2005-06-21 2006-12-21 Applied Materials. Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
KR100676203B1 (ko) 2005-06-21 2007-01-30 삼성전자주식회사 반도체 설비용 정전 척의 냉각 장치
US20090194233A1 (en) 2005-06-23 2009-08-06 Tokyo Electron Limited Component for semicondutor processing apparatus and manufacturing method thereof
TW200721363A (en) 2005-07-25 2007-06-01 Sumitomo Electric Industries Wafer holder, heater unit having the wafer holder, and wafer prober having the heater unit
JP4554461B2 (ja) 2005-07-26 2010-09-29 株式会社日立ハイテクノロジーズ 半導体装置の製造方法
US8535443B2 (en) 2005-07-27 2013-09-17 Applied Materials, Inc. Gas line weldment design and process for CVD aluminum
US8366829B2 (en) 2005-08-05 2013-02-05 Advanced Micro-Fabrication Equipment, Inc. Asia Multi-station decoupled reactive ion etch chamber
JP5213150B2 (ja) 2005-08-12 2013-06-19 国立大学法人東北大学 プラズマ処理装置及びプラズマ処理装置を用いた製品の製造方法
US8709162B2 (en) 2005-08-16 2014-04-29 Applied Materials, Inc. Active cooling substrate support
US7833381B2 (en) 2005-08-18 2010-11-16 David Johnson Optical emission interferometry for PECVD using a gas injection hole
DE102006038885B4 (de) 2005-08-24 2013-10-10 Wonik Ips Co., Ltd. Verfahren zum Abscheiden einer Ge-Sb-Te-Dünnschicht
EP1943661B1 (en) 2005-09-06 2012-02-08 Carl Zeiss SMT GmbH Charged particle inspection method and charged particle system
US20070056925A1 (en) 2005-09-09 2007-03-15 Lam Research Corporation Selective etch of films with high dielectric constant with H2 addition
US20070066084A1 (en) 2005-09-21 2007-03-22 Cory Wajda Method and system for forming a layer with controllable spstial variation
US20070071888A1 (en) 2005-09-21 2007-03-29 Arulkumar Shanmugasundram Method and apparatus for forming device features in an integrated electroless deposition system
US7718030B2 (en) 2005-09-23 2010-05-18 Tokyo Electron Limited Method and system for controlling radical distribution
JP4823628B2 (ja) 2005-09-26 2011-11-24 東京エレクトロン株式会社 基板処理方法および記録媒体
DE102005047081B4 (de) 2005-09-30 2019-01-31 Robert Bosch Gmbh Verfahren zum plasmalosen Ätzen von Silizium mit dem Ätzgas ClF3 oder XeF2
US8102123B2 (en) 2005-10-04 2012-01-24 Topanga Technologies, Inc. External resonator electrode-less plasma lamp and method of exciting with radio-frequency energy
US7438534B2 (en) 2005-10-07 2008-10-21 Edwards Vacuum, Inc. Wide range pressure control using turbo pump
US8772214B2 (en) 2005-10-14 2014-07-08 Air Products And Chemicals, Inc. Aqueous cleaning composition for removing residues and method using same
KR100703014B1 (ko) 2005-10-26 2007-04-06 삼성전자주식회사 실리콘 산화물 식각액 및 이를 이용한 반도체 소자의 제조 방법
US7884032B2 (en) 2005-10-28 2011-02-08 Applied Materials, Inc. Thin film deposition
US20070099806A1 (en) 2005-10-28 2007-05-03 Stewart Michael P Composition and method for selectively removing native oxide from silicon-containing surfaces
EP1780779A3 (en) 2005-10-28 2008-06-11 Interuniversitair Microelektronica Centrum ( Imec) A plasma for patterning advanced gate stacks
US7696101B2 (en) 2005-11-01 2010-04-13 Micron Technology, Inc. Process for increasing feature density during the manufacture of a semiconductor device
US7850779B2 (en) 2005-11-04 2010-12-14 Applied Materisals, Inc. Apparatus and process for plasma-enhanced atomic layer deposition
US20070107750A1 (en) 2005-11-14 2007-05-17 Sawin Herbert H Method of using NF3 for removing surface deposits from the interior of chemical vapor deposition chambers
JP4918778B2 (ja) 2005-11-16 2012-04-18 株式会社日立製作所 半導体集積回路装置の製造方法
US20070117396A1 (en) 2005-11-22 2007-05-24 Dingjun Wu Selective etching of titanium nitride with xenon difluoride
US7704887B2 (en) 2005-11-22 2010-04-27 Applied Materials, Inc. Remote plasma pre-clean with low hydrogen pressure
US7862683B2 (en) 2005-12-02 2011-01-04 Tokyo Electron Limited Chamber dry cleaning
KR100663668B1 (ko) 2005-12-07 2007-01-09 주식회사 뉴파워 프라즈마 복수의 기판을 병렬 배치 처리하기 위한 플라즈마 처리장치
US7662723B2 (en) 2005-12-13 2010-02-16 Lam Research Corporation Methods and apparatus for in-situ substrate processing
US7405160B2 (en) 2005-12-13 2008-07-29 Tokyo Electron Limited Method of making semiconductor device
JP4344949B2 (ja) 2005-12-27 2009-10-14 セイコーエプソン株式会社 シャワーヘッド、シャワーヘッドを含む成膜装置、ならびに強誘電体膜の製造方法
US7449538B2 (en) 2005-12-30 2008-11-11 Hynix Semiconductor Inc. Hard mask composition and method for manufacturing semiconductor device
US8088248B2 (en) 2006-01-11 2012-01-03 Lam Research Corporation Gas switching section including valves having different flow coefficients for gas distribution system
KR100712727B1 (ko) 2006-01-26 2007-05-04 주식회사 아토 절연체를 이용한 샤워헤드
JP2007191792A (ja) 2006-01-19 2007-08-02 Atto Co Ltd ガス分離型シャワーヘッド
US20070169703A1 (en) 2006-01-23 2007-07-26 Brent Elliot Advanced ceramic heater for substrate processing
US8173228B2 (en) 2006-01-27 2012-05-08 Applied Materials, Inc. Particle reduction on surfaces of chemical vapor deposition processing apparatus
US7494545B2 (en) 2006-02-03 2009-02-24 Applied Materials, Inc. Epitaxial deposition process and apparatus
KR100785164B1 (ko) 2006-02-04 2007-12-11 위순임 다중 출력 원격 플라즈마 발생기 및 이를 구비한 기판 처리시스템
KR100678696B1 (ko) 2006-02-08 2007-02-06 주식회사 뉴파워 프라즈마 환형 플라즈마를 형성하기 위한 페라이트 코어 조립체를구비한 자기 강화된 플라즈마 소오스
KR100752622B1 (ko) 2006-02-17 2007-08-30 한양대학교 산학협력단 원거리 플라즈마 발생장치
CN101378850A (zh) 2006-02-21 2009-03-04 应用材料股份有限公司 加强用于介电膜层的远程等离子体源清洁
US20070207275A1 (en) 2006-02-21 2007-09-06 Applied Materials, Inc. Enhancement of remote plasma source clean for dielectric films
US7713430B2 (en) * 2006-02-23 2010-05-11 Micron Technology, Inc. Using positive DC offset of bias RF to neutralize charge build-up of etch features
US7520969B2 (en) 2006-03-07 2009-04-21 Applied Materials, Inc. Notched deposition ring
US20090069360A1 (en) 2006-03-16 2009-03-12 David Bryant Batt Organic Compounds
US7977245B2 (en) 2006-03-22 2011-07-12 Applied Materials, Inc. Methods for etching a dielectric barrier layer with high selectivity
US7381651B2 (en) 2006-03-22 2008-06-03 Axcelis Technologies, Inc. Processes for monitoring the levels of oxygen and/or nitrogen species in a substantially oxygen and nitrogen-free plasma ashing process
WO2007112454A2 (en) 2006-03-28 2007-10-04 Stratusys Inc. Apparatus and method for processing substrates using one or more vacuum transfer chamber units
US8343280B2 (en) 2006-03-28 2013-01-01 Tokyo Electron Limited Multi-zone substrate temperature control system and method of operating
US7743731B2 (en) 2006-03-30 2010-06-29 Tokyo Electron Limited Reduced contaminant gas injection system and method of using
US7780865B2 (en) 2006-03-31 2010-08-24 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
US7906032B2 (en) 2006-03-31 2011-03-15 Tokyo Electron Limited Method for conditioning a process chamber
JP5042517B2 (ja) 2006-04-10 2012-10-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN100539080C (zh) 2006-04-12 2009-09-09 中芯国际集成电路制造(上海)有限公司 通过自对准形成多晶硅浮栅结构的方法
US20070243714A1 (en) 2006-04-18 2007-10-18 Applied Materials, Inc. Method of controlling silicon-containing polymer build up during etching by using a periodic cleaning step
US7488685B2 (en) 2006-04-25 2009-02-10 Micron Technology, Inc. Process for improving critical dimension uniformity of integrated circuit arrays
SG171606A1 (en) 2006-04-26 2011-06-29 Advanced Tech Materials Cleaning of semiconductor processing systems
US8226769B2 (en) 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
US20070254169A1 (en) 2006-04-28 2007-11-01 Kamins Theodore I Structures including organic self-assembled monolayers and methods of making the structures
US7541292B2 (en) 2006-04-28 2009-06-02 Applied Materials, Inc. Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones
US7297564B1 (en) 2006-05-02 2007-11-20 Sharp Laboratories Of America, Inc. Fabrication of vertical sidewalls on (110) silicon substrates for use in Si/SiGe photodetectors
US7601607B2 (en) 2006-05-15 2009-10-13 Chartered Semiconductor Manufacturing, Ltd. Protruded contact and insertion of inter-layer-dielectric material to match damascene hardmask to improve undercut for low-k interconnects
JP5578389B2 (ja) 2006-05-16 2014-08-27 Ｎｌｔテクノロジー株式会社 積層膜パターン形成方法及びゲート電極形成方法
US20070266946A1 (en) 2006-05-22 2007-11-22 Byung-Chul Choi Semiconductor device manufacturing apparatus and method of using the same
JP5119609B2 (ja) 2006-05-25 2013-01-16 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体、並びに半導体装置
US7790634B2 (en) 2006-05-30 2010-09-07 Applied Materials, Inc Method for depositing and curing low-k films for gapfill and conformal film applications
US20070281106A1 (en) 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill
US20070277734A1 (en) 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill
US7825038B2 (en) 2006-05-30 2010-11-02 Applied Materials, Inc. Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
US7665951B2 (en) 2006-06-02 2010-02-23 Applied Materials, Inc. Multiple slot load lock chamber and method of operation
JP5069427B2 (ja) 2006-06-13 2012-11-07 北陸成型工業株式会社 シャワープレート、並びにそれを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法
US7777152B2 (en) 2006-06-13 2010-08-17 Applied Materials, Inc. High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck
US7932181B2 (en) 2006-06-20 2011-04-26 Lam Research Corporation Edge gas injection for critical dimension uniformity improvement
US20070296967A1 (en) 2006-06-27 2007-12-27 Bhupendra Kumra Gupta Analysis of component for presence, composition and/or thickness of coating
US8114781B2 (en) 2006-06-29 2012-02-14 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
US7416989B1 (en) 2006-06-30 2008-08-26 Novellus Systems, Inc. Adsorption based material removal process
US7618889B2 (en) 2006-07-18 2009-11-17 Applied Materials, Inc. Dual damascene fabrication with low k materials
US9275887B2 (en) 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
US20080029032A1 (en) 2006-08-01 2008-02-07 Sun Jennifer Y Substrate support with protective layer for plasma resistance
GB0615343D0 (en) 2006-08-02 2006-09-13 Point 35 Microstructures Ltd Improved etch process
GB0616131D0 (en) 2006-08-14 2006-09-20 Oxford Instr Plasma Technology Surface processing apparatus
US20080045030A1 (en) 2006-08-15 2008-02-21 Shigeru Tahara Substrate processing method, substrate processing system and storage medium
US20080124937A1 (en) 2006-08-16 2008-05-29 Songlin Xu Selective etching method and apparatus
KR100761757B1 (ko) 2006-08-17 2007-09-28 삼성전자주식회사 막 형성 방법
KR100818708B1 (ko) 2006-08-18 2008-04-01 주식회사 하이닉스반도체 표면 세정을 포함하는 반도체소자 제조방법
US20080063810A1 (en) 2006-08-23 2008-03-13 Applied Materials, Inc. In-situ process state monitoring of chamber
US8110787B1 (en) 2006-08-23 2012-02-07 ON Semiconductor Trading, Ltd Image sensor with a reflective waveguide
US7575007B2 (en) 2006-08-23 2009-08-18 Applied Materials, Inc. Chamber recovery after opening barrier over copper
KR101101104B1 (ko) * 2006-08-24 2012-01-03 다이킨 고교 가부시키가이샤 반도체 드라이 프로세스 후의 잔사 제거액 및 그것을 이용한 잔사 제거 방법
US7611980B2 (en) 2006-08-30 2009-11-03 Micron Technology, Inc. Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures
US20080063798A1 (en) 2006-08-30 2008-03-13 Kher Shreyas S Precursors and hardware for cvd and ald
US7452766B2 (en) 2006-08-31 2008-11-18 Micron Technology, Inc. Finned memory cells and the fabrication thereof
US7517804B2 (en) 2006-08-31 2009-04-14 Micron Technologies, Inc. Selective etch chemistries for forming high aspect ratio features and associated structures
KR100849929B1 (ko) 2006-09-16 2008-08-26 주식회사 피에조닉스 반응 기체의 분사 속도를 적극적으로 조절하는 샤워헤드를구비한 화학기상 증착 방법 및 장치
US7297894B1 (en) 2006-09-25 2007-11-20 Tokyo Electron Limited Method for multi-step temperature control of a substrate
US20080075668A1 (en) 2006-09-27 2008-03-27 Goldstein Alan H Security Device Using Reversibly Self-Assembling Systems
CN101153396B (zh) 2006-09-30 2010-06-09 中芯国际集成电路制造(上海)有限公司 等离子刻蚀方法
US7589950B2 (en) 2006-10-13 2009-09-15 Applied Materials, Inc. Detachable electrostatic chuck having sealing assembly
JP2008103645A (ja) 2006-10-20 2008-05-01 Toshiba Corp 半導体装置の製造方法
US20080099147A1 (en) 2006-10-26 2008-05-01 Nyi Oo Myo Temperature controlled multi-gas distribution assembly
US7655571B2 (en) 2006-10-26 2010-02-02 Applied Materials, Inc. Integrated method and apparatus for efficient removal of halogen residues from etched substrates
JP2008109043A (ja) 2006-10-27 2008-05-08 Oki Electric Ind Co Ltd 半導体装置の製造方法および半導体装置
US7943005B2 (en) 2006-10-30 2011-05-17 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US7909961B2 (en) 2006-10-30 2011-03-22 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US20080102640A1 (en) 2006-10-30 2008-05-01 Applied Materials, Inc. Etching oxide with high selectivity to titanium nitride
US8002946B2 (en) 2006-10-30 2011-08-23 Applied Materials, Inc. Mask etch plasma reactor with cathode providing a uniform distribution of etch rate
US7880232B2 (en) 2006-11-01 2011-02-01 Micron Technology, Inc. Processes and apparatus having a semiconductor fin
US7725974B2 (en) 2006-11-02 2010-06-01 Hughes Randall L Shoe and foot cleaning and disinfecting system
US20080193673A1 (en) 2006-12-05 2008-08-14 Applied Materials, Inc. Method of processing a workpiece using a mid-chamber gas distribution plate, tuned plasma flow control grid and electrode
US7939422B2 (en) 2006-12-07 2011-05-10 Applied Materials, Inc. Methods of thin film process
KR20090094368A (ko) 2006-12-11 2009-09-04 어플라이드 머티어리얼스, 인코포레이티드 건식 포토레지스트 스트립핑 프로세스 및 장치
US8702866B2 (en) 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
TWM318795U (en) 2006-12-18 2007-09-11 Lighthouse Technology Co Ltd Package structure
US20100059889A1 (en) 2006-12-20 2010-03-11 Nxp, B.V. Adhesion of diffusion barrier on copper-containing interconnect element
US8043430B2 (en) 2006-12-20 2011-10-25 Lam Research Corporation Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber
US7922863B2 (en) 2006-12-22 2011-04-12 Applied Materials, Inc. Apparatus for integrated gas and radiation delivery
JP5229711B2 (ja) 2006-12-25 2013-07-03 国立大学法人名古屋大学 パターン形成方法、および半導体装置の製造方法
US20080156631A1 (en) 2006-12-27 2008-07-03 Novellus Systems, Inc. Methods of Producing Plasma in a Container
JP2008163430A (ja) 2006-12-28 2008-07-17 Jtekt Corp 高耐食性部材およびその製造方法
US20080157225A1 (en) 2006-12-29 2008-07-03 Suman Datta SRAM and logic transistors with variable height multi-gate transistor architecture
KR20080063988A (ko) 2007-01-03 2008-07-08 삼성전자주식회사 중성빔을 이용한 식각장치
US8097105B2 (en) 2007-01-11 2012-01-17 Lam Research Corporation Extending lifetime of yttrium oxide as a plasma chamber material
JP5168907B2 (ja) 2007-01-15 2013-03-27 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
JP4421618B2 (ja) 2007-01-17 2010-02-24 東京エレクトロン株式会社 フィン型電界効果トランジスタの製造方法
US7728364B2 (en) 2007-01-19 2010-06-01 International Business Machines Corporation Enhanced mobility CMOS transistors with a V-shaped channel with self-alignment to shallow trench isolation
JP4299863B2 (ja) 2007-01-22 2009-07-22 エルピーダメモリ株式会社 半導体装置の製造方法
US8444926B2 (en) 2007-01-30 2013-05-21 Applied Materials, Inc. Processing chamber with heated chamber liner
KR100878015B1 (ko) 2007-01-31 2009-01-13 삼성전자주식회사 산화물 제거 방법 및 이를 이용한 트렌치 매립 방법
JP5048352B2 (ja) 2007-01-31 2012-10-17 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR100843236B1 (ko) 2007-02-06 2008-07-03 삼성전자주식회사 더블 패터닝 공정을 이용하는 반도체 소자의 미세 패턴형성 방법
JP2008205219A (ja) 2007-02-20 2008-09-04 Masato Toshima シャワーヘッドおよびこれを用いたｃｖｄ装置
CN100577866C (zh) 2007-02-27 2010-01-06 中微半导体设备(上海)有限公司 应用于等离子体反应室中的气体喷头组件、其制造方法及其翻新再利用的方法
US20080202892A1 (en) 2007-02-27 2008-08-28 Smith John M Stacked process chambers for substrate vacuum processing tool
US20080216901A1 (en) 2007-03-06 2008-09-11 Mks Instruments, Inc. Pressure control for vacuum processing system
US20080216958A1 (en) 2007-03-07 2008-09-11 Novellus Systems, Inc. Plasma Reaction Apparatus Having Pre-Seasoned Showerheads and Methods for Manufacturing the Same
US7977249B1 (en) 2007-03-07 2011-07-12 Novellus Systems, Inc. Methods for removing silicon nitride and other materials during fabrication of contacts
JP4833890B2 (ja) * 2007-03-12 2011-12-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ分布補正方法
US7576018B2 (en) 2007-03-12 2009-08-18 Tokyo Electron Limited Method for flexing a substrate during processing
KR101526615B1 (ko) 2007-03-12 2015-06-05 도쿄엘렉트론가부시키가이샤 처리 균일성 제어 방법, 플라즈마 처리 장치 및 기판 국소 변형 방법
KR100853485B1 (ko) 2007-03-19 2008-08-21 주식회사 하이닉스반도체 리세스 게이트를 갖는 반도체 소자의 제조 방법
US20080233709A1 (en) 2007-03-22 2008-09-25 Infineon Technologies North America Corp. Method for removing material from a semiconductor
US7815814B2 (en) 2007-03-23 2010-10-19 Tokyo Electron Limited Method and system for dry etching a metal nitride
JP4418027B2 (ja) 2007-03-28 2010-02-17 キヤノンアネルバ株式会社 真空処理装置
JP5317424B2 (ja) 2007-03-28 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置
JP4988402B2 (ja) 2007-03-30 2012-08-01 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8235001B2 (en) 2007-04-02 2012-08-07 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device
CN101657565A (zh) 2007-04-17 2010-02-24 株式会社爱发科 成膜装置
JP5282419B2 (ja) 2007-04-18 2013-09-04 ソニー株式会社 半導体装置及びその製造方法
JP5135879B2 (ja) 2007-05-21 2013-02-06 富士電機株式会社 炭化珪素半導体装置の製造方法
KR100777043B1 (ko) 2007-05-22 2007-11-16 주식회사 테스 비정질 탄소막 형성 방법 및 이를 이용한 반도체 소자의제조 방법
US8084105B2 (en) 2007-05-23 2011-12-27 Applied Materials, Inc. Method of depositing boron nitride and boron nitride-derived materials
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US7807578B2 (en) 2007-06-01 2010-10-05 Applied Materials, Inc. Frequency doubling using spacer mask
JP2008305871A (ja) 2007-06-05 2008-12-18 Spansion Llc 半導体装置およびその製造方法
KR20080111627A (ko) * 2007-06-19 2008-12-24 삼성전자주식회사 플라즈마 공정장치 및 그 방법
US20090004873A1 (en) 2007-06-26 2009-01-01 Intevac, Inc. Hybrid etch chamber with decoupled plasma controls
JP5008478B2 (ja) 2007-06-27 2012-08-22 東京エレクトロン株式会社 基板処理装置およびシャワーヘッド
US7585716B2 (en) 2007-06-27 2009-09-08 International Business Machines Corporation High-k/metal gate MOSFET with reduced parasitic capacitance
TWI479559B (zh) 2007-06-28 2015-04-01 Quantum Global Tech Llc 以選擇性噴灑蝕刻來清潔腔室部件的方法和設備
KR100877107B1 (ko) 2007-06-28 2009-01-07 주식회사 하이닉스반도체 반도체 소자의 층간절연막 형성방법
JP4438008B2 (ja) 2007-06-29 2010-03-24 東京エレクトロン株式会社 基板処理装置
US8021514B2 (en) 2007-07-11 2011-09-20 Applied Materials, Inc. Remote plasma source for pre-treatment of substrates prior to deposition
US8197636B2 (en) 2007-07-12 2012-06-12 Applied Materials, Inc. Systems for plasma enhanced chemical vapor deposition and bevel edge etching
JP5660753B2 (ja) 2007-07-13 2015-01-28 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマエッチング用高温カソード
WO2009010909A1 (en) 2007-07-19 2009-01-22 Koninklijke Philips Electronics N.V. Method, system and device for transmitting lighting device data
DE102007033685A1 (de) 2007-07-19 2009-01-22 Robert Bosch Gmbh Verfahren zum Ätzen einer Schicht auf einem Silizium-Halbleitersubstrat
JP5077659B2 (ja) 2007-07-20 2012-11-21 ニチアス株式会社 触媒コンバーター及び触媒コンバーター用保持材
US8008166B2 (en) 2007-07-26 2011-08-30 Applied Materials, Inc. Method and apparatus for cleaning a substrate surface
US8108981B2 (en) 2007-07-31 2012-02-07 Applied Materials, Inc. Method of making an electrostatic chuck with reduced plasma penetration and arcing
EP2042516A1 (en) 2007-09-27 2009-04-01 Protaffin Biotechnologie AG Glycosaminoglycan-antagonising MCP-1 mutants and methods of using same
US8367227B2 (en) 2007-08-02 2013-02-05 Applied Materials, Inc. Plasma-resistant ceramics with controlled electrical resistivity
JP5251033B2 (ja) * 2007-08-14 2013-07-31 ソニー株式会社 半導体装置の製造方法
JP4160104B1 (ja) 2007-08-16 2008-10-01 株式会社アルバック アッシング装置
WO2009025392A2 (en) 2007-08-21 2009-02-26 Panasonic Corporation Plasma processing device and method of monitoring plasma discharge state in plasma processing device
US8202393B2 (en) 2007-08-29 2012-06-19 Lam Research Corporation Alternate gas delivery and evacuation system for plasma processing apparatuses
WO2009028480A1 (ja) 2007-08-31 2009-03-05 Tokyo Electron Limited 半導体装置の製造方法
TWI459851B (zh) 2007-09-10 2014-11-01 Ngk Insulators Ltd heating equipment
JP5148955B2 (ja) 2007-09-11 2013-02-20 東京エレクトロン株式会社 基板載置機構及び基板処理装置
JP5347294B2 (ja) 2007-09-12 2013-11-20 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP5169097B2 (ja) 2007-09-14 2013-03-27 住友電気工業株式会社 半導体装置の製造装置および製造方法
US20120122319A1 (en) 2007-09-19 2012-05-17 Hironobu Shimizu Coating method for coating reaction tube prior to film forming process
US7781332B2 (en) 2007-09-19 2010-08-24 International Business Machines Corporation Methods to mitigate plasma damage in organosilicate dielectrics using a protective sidewall spacer
US8313610B2 (en) 2007-09-25 2012-11-20 Lam Research Corporation Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses
JP2009088229A (ja) 2007-09-28 2009-04-23 Tokyo Electron Ltd 成膜装置、成膜方法、記憶媒体及びガス供給装置
US20090084317A1 (en) 2007-09-28 2009-04-02 Applied Materials, Inc. Atomic layer deposition chamber and components
JP2009088522A (ja) 2007-09-28 2009-04-23 Hynix Semiconductor Inc 半導体装置のリセスゲート製造方法
US8298931B2 (en) 2007-09-28 2012-10-30 Sandisk 3D Llc Dual damascene with amorphous carbon for 3D deep via/trench application
CN101802254B (zh) 2007-10-11 2013-11-27 瓦伦斯处理设备公司 化学气相沉积反应器
US7838390B2 (en) 2007-10-12 2010-11-23 Samsung Electronics Co., Ltd. Methods of forming integrated circuit devices having ion-cured electrically insulating layers therein
US20090095222A1 (en) 2007-10-16 2009-04-16 Alexander Tam Multi-gas spiral channel showerhead
US20090095221A1 (en) 2007-10-16 2009-04-16 Alexander Tam Multi-gas concentric injection showerhead
US7976631B2 (en) 2007-10-16 2011-07-12 Applied Materials, Inc. Multi-gas straight channel showerhead
US8252696B2 (en) 2007-10-22 2012-08-28 Applied Materials, Inc. Selective etching of silicon nitride
US7871926B2 (en) 2007-10-22 2011-01-18 Applied Materials, Inc. Methods and systems for forming at least one dielectric layer
US8668775B2 (en) 2007-10-31 2014-03-11 Toshiba Techno Center Inc. Machine CVD shower head
JP5417338B2 (ja) 2007-10-31 2014-02-12 ラム リサーチ コーポレーション 冷却液と構成部品本体との間の熱伝導性を制御するためにガス圧を使用する温度制御モジュール及び温度制御方法
CN101889329B (zh) 2007-10-31 2012-07-04 朗姆研究公司 长寿命可消耗氮化硅-二氧化硅等离子处理部件
WO2009057838A1 (en) 2007-11-01 2009-05-07 Eugene Technology Co., Ltd Apparatus for surface-treating wafer using high-frequency inductively-coupled plasma
JP5006938B2 (ja) 2007-11-02 2012-08-22 キヤノンアネルバ株式会社 表面処理装置およびその基板処理方法
JP5192214B2 (ja) 2007-11-02 2013-05-08 東京エレクトロン株式会社 ガス供給装置、基板処理装置および基板処理方法
US7964040B2 (en) 2007-11-08 2011-06-21 Applied Materials, Inc. Multi-port pumping system for substrate processing chambers
US8592318B2 (en) 2007-11-08 2013-11-26 Lam Research Corporation Pitch reduction using oxide spacer
JP5150217B2 (ja) 2007-11-08 2013-02-20 東京エレクトロン株式会社 シャワープレート及び基板処理装置
US20090120364A1 (en) 2007-11-09 2009-05-14 Applied Materials, Inc. Gas mixing swirl insert assembly
JP5172617B2 (ja) 2007-11-12 2013-03-27 シャープ株式会社 気相成長装置及び気相成長方法
US7704849B2 (en) 2007-12-03 2010-04-27 Micron Technology, Inc. Methods of forming trench isolation in silicon of a semiconductor substrate by plasma
US20110232737A1 (en) 2007-12-04 2011-09-29 Parabel Ag Multilayer solar element
FR2924501B1 (fr) 2007-12-04 2010-02-05 Commissariat Energie Atomique Procede de reglage d'un circuit d'excitation et detection pour resonance magnetique nucleaire et circuit d'excitation et detection adapte a la mise en oeuvre d'un tel procede
JP5142692B2 (ja) 2007-12-11 2013-02-13 株式会社東芝 不揮発性半導体記憶装置
US8187486B1 (en) 2007-12-13 2012-05-29 Novellus Systems, Inc. Modulating etch selectivity and etch rate of silicon nitride thin films
US20090159213A1 (en) 2007-12-19 2009-06-25 Applied Materials, Inc. Plasma reactor gas distribution plate having a path splitting manifold immersed within a showerhead
US8512509B2 (en) 2007-12-19 2013-08-20 Applied Materials, Inc. Plasma reactor gas distribution plate with radially distributed path splitting manifold
US8129029B2 (en) 2007-12-21 2012-03-06 Applied Materials, Inc. Erosion-resistant plasma chamber components comprising a metal base structure with an overlying thermal oxidation coating
US7989329B2 (en) 2007-12-21 2011-08-02 Applied Materials, Inc. Removal of surface dopants from a substrate
KR20100103627A (ko) 2007-12-21 2010-09-27 어플라이드 머티어리얼스, 인코포레이티드 기판의 온도를 제어하기 위한 방법 및 장치
JP4974873B2 (ja) 2007-12-26 2012-07-11 新光電気工業株式会社 静電チャック及び基板温調固定装置
US20090170331A1 (en) 2007-12-27 2009-07-02 International Business Machines Corporation Method of forming a bottle-shaped trench by ion implantation
TWI427697B (zh) 2007-12-28 2014-02-21 Tokyo Electron Ltd 金屬膜及金屬氧化膜之蝕刻方法與半導體裝置之製造方法
US7910477B2 (en) 2007-12-28 2011-03-22 Texas Instruments Incorporated Etch residue reduction by ash methodology
JP2009170509A (ja) 2008-01-11 2009-07-30 Hitachi High-Technologies Corp ヒータ内蔵静電チャックを備えたプラズマ処理装置
US8018023B2 (en) 2008-01-14 2011-09-13 Kabushiki Kaisha Toshiba Trench sidewall protection by a carbon-rich layer in a semiconductor device
US7998864B2 (en) 2008-01-29 2011-08-16 International Business Machines Corporation Noble metal cap for interconnect structures
US20090191711A1 (en) 2008-01-30 2009-07-30 Ying Rui Hardmask open process with enhanced cd space shrink and reduction
TW200933812A (en) 2008-01-30 2009-08-01 Promos Technologies Inc Process for forming trench isolation structure and semiconductor device produced thereby
KR20100106608A (ko) 2008-01-31 2010-10-01 어플라이드 머티어리얼스, 인코포레이티드 폐쇄 회로 ｍｏｃｖｄ 증착 제어
US20090194810A1 (en) 2008-01-31 2009-08-06 Masahiro Kiyotoshi Semiconductor device using element isolation region of trench isolation structure and manufacturing method thereof
JP5224837B2 (ja) * 2008-02-01 2013-07-03 株式会社東芝 基板のプラズマ処理装置及びプラズマ処理方法
JP5250279B2 (ja) 2008-02-23 2013-07-31 東京エレクトロン株式会社 プローブ装置
WO2009107701A1 (ja) 2008-02-26 2009-09-03 京セラ株式会社 ウェハ支持部材とその製造方法、及びこれを用いた静電チャック
US20090214825A1 (en) 2008-02-26 2009-08-27 Applied Materials, Inc. Ceramic coating comprising yttrium which is resistant to a reducing plasma
US8066895B2 (en) 2008-02-28 2011-11-29 Applied Materials, Inc. Method to control uniformity using tri-zone showerhead
US8075728B2 (en) 2008-02-28 2011-12-13 Applied Materials, Inc. Gas flow equalizer plate suitable for use in a substrate process chamber
US8336891B2 (en) 2008-03-11 2012-12-25 Ngk Insulators, Ltd. Electrostatic chuck
US7906818B2 (en) 2008-03-13 2011-03-15 Micron Technology, Inc. Memory array with a pair of memory-cell strings to a single conductive pillar
JP5188849B2 (ja) 2008-03-14 2013-04-24 Ｓｐｐテクノロジーズ株式会社 プラズマ処理装置
US7915597B2 (en) 2008-03-18 2011-03-29 Axcelis Technologies, Inc. Extraction electrode system for high current ion implanter
JP5179389B2 (ja) 2008-03-19 2013-04-10 東京エレクトロン株式会社 シャワーヘッド及び基板処理装置
JP5264231B2 (ja) 2008-03-21 2013-08-14 東京エレクトロン株式会社 プラズマ処理装置
US9520275B2 (en) 2008-03-21 2016-12-13 Tokyo Electron Limited Mono-energetic neutral beam activated chemical processing system and method of using
US20110011341A1 (en) 2008-03-24 2011-01-20 Tokyo Electron Limited Shower plate and plasma processing device using the same
JP5352103B2 (ja) 2008-03-27 2013-11-27 東京エレクトロン株式会社 熱処理装置および処理システム
DE102008016425B4 (de) 2008-03-31 2015-11-19 Advanced Micro Devices, Inc. Verfahren zur Strukturierung einer Metallisierungsschicht durch Verringerung der durch Lackentfernung hervorgerufenen Schäden des dielektrischen Materials
JP5026326B2 (ja) 2008-04-04 2012-09-12 株式会社日立ハイテクノロジーズ エッチング処理状態の判定方法、システム
US20090258162A1 (en) 2008-04-12 2009-10-15 Applied Materials, Inc. Plasma processing apparatus and method
JP2009266952A (ja) 2008-04-23 2009-11-12 Seiko Epson Corp デバイスの製造方法及び製造装置
US8318605B2 (en) 2008-04-25 2012-11-27 Applied Materials, Inc. Plasma treatment method for preventing defects in doped silicon oxide surfaces during exposure to atmosphere
US8252194B2 (en) 2008-05-02 2012-08-28 Micron Technology, Inc. Methods of removing silicon oxide
US8441640B2 (en) 2008-05-02 2013-05-14 Applied Materials, Inc. Non-contact substrate support position sensing system and corresponding adjustments
WO2009133193A1 (en) 2008-05-02 2009-11-05 Oerlikon Trading Ag, Truebbach Plasma treatment apparatus and method for plasma-assisted treatment of substrates
US20090275206A1 (en) 2008-05-05 2009-11-05 Applied Materials, Inc. Plasma process employing multiple zone gas distribution for improved uniformity of critical dimension bias
US20090274590A1 (en) 2008-05-05 2009-11-05 Applied Materials, Inc. Plasma reactor electrostatic chuck having a coaxial rf feed and multizone ac heater power transmission through the coaxial feed
US20090277587A1 (en) 2008-05-09 2009-11-12 Applied Materials, Inc. Flowable dielectric equipment and processes
US8357435B2 (en) 2008-05-09 2013-01-22 Applied Materials, Inc. Flowable dielectric equipment and processes
US20090277874A1 (en) 2008-05-09 2009-11-12 Applied Materials, Inc. Method and apparatus for removing polymer from a substrate
US8277670B2 (en) 2008-05-13 2012-10-02 Lam Research Corporation Plasma process with photoresist mask pretreatment
KR100999182B1 (ko) 2008-05-20 2010-12-08 주식회사 뉴파워 프라즈마 내장 변압기를 갖는 플라즈마 반응기
KR100998011B1 (ko) 2008-05-22 2010-12-03 삼성엘이디 주식회사 화학기상 증착장치
KR101006848B1 (ko) 2008-05-28 2011-01-14 주식회사 코미코 기판 지지 장치 및 이를 포함하는 기판 처리 장치
DE102008026134A1 (de) 2008-05-30 2009-12-17 Advanced Micro Devices, Inc., Sunnyvale Mikrostrukturbauelement mit einer Metallisierungsstruktur mit selbstjustierten Luftspalten zwischen dichtliegenden Metallleitungen
US7754601B2 (en) 2008-06-03 2010-07-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor interconnect air gap formation process
US20090302005A1 (en) 2008-06-04 2009-12-10 General Electric Company Processes for texturing a surface prior to electroless plating
KR20090128913A (ko) 2008-06-11 2009-12-16 성균관대학교산학협력단 태양전지용 실리콘 기판의 텍스처링 장치 및 그 방법
US7699935B2 (en) 2008-06-19 2010-04-20 Applied Materials, Inc. Method and system for supplying a cleaning gas into a process chamber
JP2010003826A (ja) 2008-06-19 2010-01-07 Toshiba Corp 半導体装置の製造方法
US8607731B2 (en) 2008-06-23 2013-12-17 Applied Materials, Inc. Cathode with inner and outer electrodes at different heights
JP5222040B2 (ja) 2008-06-25 2013-06-26 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
WO2009157084A1 (ja) 2008-06-27 2009-12-30 三菱重工業株式会社 真空処理装置および真空処理装置の運転方法
JP5211332B2 (ja) 2008-07-01 2013-06-12 株式会社ユーテック プラズマｃｖｄ装置、ｄｌｃ膜及び薄膜の製造方法
US8291857B2 (en) 2008-07-03 2012-10-23 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition
US8206506B2 (en) 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
US8161906B2 (en) 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
KR101245430B1 (ko) 2008-07-11 2013-03-19 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
US20100006032A1 (en) 2008-07-11 2010-01-14 Applied Materials, Inc. Chamber components for cvd applications
JP4473344B2 (ja) 2008-07-15 2010-06-02 キヤノンアネルバ株式会社 プラズマ処理方法及びプラズマ処理装置
US8336188B2 (en) 2008-07-17 2012-12-25 Formfactor, Inc. Thin wafer chuck
US20140034239A1 (en) 2008-07-23 2014-02-06 Applied Materials, Inc. Differential counter electrode tuning in a plasma reactor with an rf-driven workpiece support electrode
US20100018648A1 (en) 2008-07-23 2010-01-28 Applied Marterials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
JP2011253832A (ja) 2008-07-24 2011-12-15 Canon Anelva Corp レジストトリミング方法及びトリミング装置
KR20100013980A (ko) 2008-08-01 2010-02-10 주식회사 하이닉스반도체 반도체 소자의 소자 분리막 형성 방법
US20100025370A1 (en) 2008-08-04 2010-02-04 Applied Materials, Inc. Reactive gas distributor, reactive gas treatment system, and reactive gas treatment method
CN102160167B (zh) 2008-08-12 2013-12-04 应用材料公司 静电吸盘组件
JP5801195B2 (ja) 2008-08-20 2015-10-28 ヴィジョン・ダイナミックス・ホールディング・ベスローテン・ヴェンノーツハップ 基板の表面をパターニングするためにプラズマ放電を起こすデバイス
US7882808B2 (en) 2008-08-20 2011-02-08 Crazy K Poultry + Livestock, LLC Protective hen apron
US8268729B2 (en) 2008-08-21 2012-09-18 International Business Machines Corporation Smooth and vertical semiconductor fin structure
JP2010047818A (ja) 2008-08-25 2010-03-04 Toshiba Corp 半導体製造装置および半導体製造方法
KR100997502B1 (ko) 2008-08-26 2010-11-30 금호석유화학 주식회사 개환된 프탈릭 언하이드라이드를 포함하는 유기 반사 방지막 조성물과 이의 제조방법
KR101025741B1 (ko) 2008-09-02 2011-04-04 주식회사 하이닉스반도체 수직 채널 트랜지스터의 활성필라 제조방법
US8871645B2 (en) 2008-09-11 2014-10-28 Applied Materials, Inc. Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof
US8168268B2 (en) 2008-12-12 2012-05-01 Ovishinsky Innovation, LLC Thin film deposition via a spatially-coordinated and time-synchronized process
US7709396B2 (en) 2008-09-19 2010-05-04 Applied Materials, Inc. Integral patterning of large features along with array using spacer mask patterning process flow
JP5295833B2 (ja) * 2008-09-24 2013-09-18 株式会社東芝 基板処理装置および基板処理方法
US20100081285A1 (en) 2008-09-30 2010-04-01 Tokyo Electron Limited Apparatus and Method for Improving Photoresist Properties
US8093116B2 (en) 2008-10-06 2012-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method for N/P patterning in a gate last process
US7968441B2 (en) 2008-10-08 2011-06-28 Applied Materials, Inc. Dopant activation anneal to achieve less dopant diffusion (better USJ profile) and higher activation percentage
US7928003B2 (en) 2008-10-10 2011-04-19 Applied Materials, Inc. Air gap interconnects using carbon-based films
KR101357181B1 (ko) 2008-10-14 2014-01-29 어플라이드 머티어리얼스, 인코포레이티드 플라즈마-강화 화학적 기상 증착(ｐｅｃｖｄ)에 의해 등각성 비정질 탄소막을 증착하기 위한 방법
US7910491B2 (en) 2008-10-16 2011-03-22 Applied Materials, Inc. Gapfill improvement with low etch rate dielectric liners
US20100099263A1 (en) 2008-10-20 2010-04-22 Applied Materials, Inc. Nf3/h2 remote plasma process with high etch selectivity of psg/bpsg over thermal oxide and low density surface defects
US8207470B2 (en) 2008-10-20 2012-06-26 Industry-University Cooperation Foundation Hanyang University Apparatus for generating remote plasma
US20100098882A1 (en) 2008-10-21 2010-04-22 Applied Materials, Inc. Plasma source for chamber cleaning and process
US8173547B2 (en) 2008-10-23 2012-05-08 Lam Research Corporation Silicon etch with passivation using plasma enhanced oxidation
US20100101727A1 (en) 2008-10-27 2010-04-29 Helin Ji Capacitively coupled remote plasma source with large operating pressure range
JP5396065B2 (ja) 2008-10-28 2014-01-22 株式会社日立製作所 半導体装置の製造方法
US8206829B2 (en) 2008-11-10 2012-06-26 Applied Materials, Inc. Plasma resistant coatings for plasma chamber components
US20100116788A1 (en) 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support
US8043933B2 (en) 2008-11-24 2011-10-25 Applied Materials, Inc. Integration sequences with top surface profile modification
JP5358165B2 (ja) 2008-11-26 2013-12-04 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
US20100144140A1 (en) 2008-12-10 2010-06-10 Novellus Systems, Inc. Methods for depositing tungsten films having low resistivity for gapfill applications
US20100147219A1 (en) 2008-12-12 2010-06-17 Jui Hai Hsieh High temperature and high voltage electrode assembly design
US8869741B2 (en) 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
US8540844B2 (en) 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
US8058179B1 (en) 2008-12-23 2011-11-15 Novellus Systems, Inc. Atomic layer removal process with higher etch amount
JP2010154699A (ja) 2008-12-26 2010-07-08 Hitachi Ltd 磁束可変型回転電機
US8293013B2 (en) 2008-12-30 2012-10-23 Intermolecular, Inc. Dual path gas distribution device
US7749917B1 (en) 2008-12-31 2010-07-06 Applied Materials, Inc. Dry cleaning of silicon surface for solar cell applications
US20100183825A1 (en) 2008-12-31 2010-07-22 Cambridge Nanotech Inc. Plasma atomic layer deposition system and method
KR101587601B1 (ko) 2009-01-14 2016-01-25 삼성전자주식회사 비휘발성 메모리 장치의 제조 방법
US20100187694A1 (en) 2009-01-28 2010-07-29 Chen-Hua Yu Through-Silicon Via Sidewall Isolation Structure
KR20100087915A (ko) 2009-01-29 2010-08-06 삼성전자주식회사 실린더형 스토리지 노드를 포함하는 반도체 메모리 소자 및그 제조 방법
US7964517B2 (en) 2009-01-29 2011-06-21 Texas Instruments Incorporated Use of a biased precoat for reduced first wafer defects in high-density plasma process
KR101795658B1 (ko) 2009-01-31 2017-11-08 어플라이드 머티어리얼스, 인코포레이티드 에칭을 위한 방법 및 장치
KR101527195B1 (ko) 2009-02-02 2015-06-10 삼성전자주식회사 수직 구조의 비휘발성 메모리 소자
JP5210191B2 (ja) 2009-02-03 2013-06-12 東京エレクトロン株式会社 窒化珪素膜のドライエッチング方法
JP2010180458A (ja) 2009-02-06 2010-08-19 Kit:Kk アルミニウム表面の酸化層形成方法及び半導体装置の製造方法
CN102365906B (zh) 2009-02-13 2016-02-03 应用材料公司 用于等离子体腔室电极的rf总线与rf回流总线
KR101566922B1 (ko) 2009-02-16 2015-11-09 삼성전자주식회사 저스트 드라이 에칭과 케미컬 드라이 에칭을 조합한 반도체소자의 금속 실리사이드막 형성 방법
US8148749B2 (en) 2009-02-19 2012-04-03 Fairchild Semiconductor Corporation Trench-shielded semiconductor device
US20110048325A1 (en) 2009-03-03 2011-03-03 Sun Hong Choi Gas Distribution Apparatus and Substrate Processing Apparatus Having the Same
US20100224322A1 (en) 2009-03-03 2010-09-09 Applied Materials, Inc. Endpoint detection for a reactor chamber using a remote plasma chamber
WO2010102125A2 (en) 2009-03-05 2010-09-10 Applied Materials, Inc. Inductively coupled plasma reactor having rf phase control and methods of use thereof
JP5262878B2 (ja) 2009-03-17 2013-08-14 東京エレクトロン株式会社 載置台構造及びプラズマ成膜装置
US20110124144A1 (en) 2009-03-17 2011-05-26 Roth & Rau Ag Substrate processing system and substrate processing method
KR101539699B1 (ko) 2009-03-19 2015-07-27 삼성전자주식회사 3차원 구조의 비휘발성 메모리 소자 및 그 제조방법
US8312839B2 (en) 2009-03-24 2012-11-20 Applied Materials, Inc. Mixing frequency at multiple feeding points
US8382999B2 (en) * 2009-03-26 2013-02-26 Applied Materials, Inc. Pulsed plasma high aspect ratio dielectric process
JP5657262B2 (ja) 2009-03-27 2015-01-21 東京エレクトロン株式会社 プラズマ処理装置
KR101534357B1 (ko) 2009-03-31 2015-07-06 도쿄엘렉트론가부시키가이샤 기판 지지 장치 및 기판 지지 방법
JP5501807B2 (ja) 2009-03-31 2014-05-28 東京エレクトロン株式会社 処理装置
US8026179B2 (en) 2009-04-09 2011-09-27 Macronix International Co., Ltd. Patterning method and integrated circuit structure
US8272346B2 (en) 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
US20100263588A1 (en) 2009-04-15 2010-10-21 Gan Zhiyin Methods and apparatus for epitaxial growth of semiconductor materials
US9431237B2 (en) 2009-04-20 2016-08-30 Applied Materials, Inc. Post treatment methods for oxide layers on semiconductor devices
US8193075B2 (en) 2009-04-20 2012-06-05 Applied Materials, Inc. Remote hydrogen plasma with ion filter for terminating silicon dangling bonds
JP5710591B2 (ja) 2009-04-20 2015-04-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プロセスチャンバ壁上にシリコンコーティングを使用した残留フッ素ラジカルの除去の促進
SG10201401671SA (en) 2009-04-21 2014-07-30 Applied Materials Inc Cvd apparatus for improved film thickness non-uniformity and particle performance
US20100273291A1 (en) 2009-04-28 2010-10-28 Applied Materials, Inc. Decontamination of mocvd chamber using nh3 purge after in-situ cleaning
US8623141B2 (en) 2009-05-18 2014-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Piping system and control for semiconductor processing
KR101360876B1 (ko) 2009-06-03 2014-02-11 어플라이드 머티어리얼스, 인코포레이티드 식각을 위한 방법 및 장치
US8753447B2 (en) 2009-06-10 2014-06-17 Novellus Systems, Inc. Heat shield for heater in semiconductor processing apparatus
US8492292B2 (en) 2009-06-29 2013-07-23 Applied Materials, Inc. Methods of forming oxide layers on substrates
CN105088191B (zh) 2009-07-15 2018-07-13 应用材料公司 Cvd 腔室的流体控制特征结构
US8440061B2 (en) 2009-07-20 2013-05-14 Lam Research Corporation System and method for plasma arc detection, isolation and prevention
US8124531B2 (en) 2009-08-04 2012-02-28 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US7935643B2 (en) 2009-08-06 2011-05-03 Applied Materials, Inc. Stress management for tensile films
US8404598B2 (en) * 2009-08-07 2013-03-26 Applied Materials, Inc. Synchronized radio frequency pulsing for plasma etching
US7989365B2 (en) 2009-08-18 2011-08-02 Applied Materials, Inc. Remote plasma source seasoning
KR101095119B1 (ko) 2009-08-19 2011-12-16 삼성전기주식회사 다이 패키지 및 그 제조방법
US9299539B2 (en) 2009-08-21 2016-03-29 Lam Research Corporation Method and apparatus for measuring wafer bias potential
KR20120063494A (ko) 2009-08-26 2012-06-15 비코 인스트루먼츠 인코포레이티드 자성 기록 매체 상에 패턴을 제조하기 위한 시스템
KR20120090996A (ko) 2009-08-27 2012-08-17 어플라이드 머티어리얼스, 인코포레이티드 인-시튜 챔버 세정 후 프로세스 챔버의 제염 방법
US8211808B2 (en) 2009-08-31 2012-07-03 Applied Materials, Inc. Silicon-selective dry etch for carbon-containing films
JP5002073B2 (ja) 2009-09-02 2012-08-15 積水化学工業株式会社 シリコン含有膜のエッチング方法
US20120171852A1 (en) 2009-09-04 2012-07-05 Applied Materials, Inc Remote hydrogen plasma source of silicon containing film deposition
US20110061812A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110061810A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110065276A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
JP5648349B2 (ja) 2009-09-17 2015-01-07 東京エレクトロン株式会社 成膜装置
US8216640B2 (en) 2009-09-25 2012-07-10 Hermes-Epitek Corporation Method of making showerhead for semiconductor processing apparatus
US8329587B2 (en) 2009-10-05 2012-12-11 Applied Materials, Inc. Post-planarization densification
US9449859B2 (en) 2009-10-09 2016-09-20 Applied Materials, Inc. Multi-gas centrally cooled showerhead design
TWI430714B (zh) 2009-10-15 2014-03-11 Orbotech Lt Solar Llc 電漿處理腔之噴撒頭組件及電漿處理腔之噴撒頭組件之氣體電離板之製備方法
EP2315028A1 (en) 2009-10-26 2011-04-27 Atlas Antibodies AB PODXL protein in colorectal cancer
US8741097B2 (en) 2009-10-27 2014-06-03 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
EP2494601A4 (en) 2009-10-30 2016-09-07 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
JP5257328B2 (ja) 2009-11-04 2013-08-07 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
SG10201407094SA (en) 2009-11-04 2014-12-30 Applied Materials Inc Plasma ion implantation process for patterned disc media applications
US8455364B2 (en) 2009-11-06 2013-06-04 International Business Machines Corporation Sidewall image transfer using the lithographic stack as the mandrel
US8716780B2 (en) 2009-11-06 2014-05-06 Rambus Inc. Three-dimensional memory array stacking structure
KR20110054840A (ko) 2009-11-18 2011-05-25 주식회사 아토 샤워헤드 어셈블리 및 이를 구비한 박막증착장치
US8771538B2 (en) 2009-11-18 2014-07-08 Applied Materials, Inc. Plasma source design
US8742665B2 (en) 2009-11-18 2014-06-03 Applied Materials, Inc. Plasma source design
TW201133482A (en) 2009-11-30 2011-10-01 Applied Materials Inc Chamber for processing hard disk drive substrates
WO2011072143A2 (en) 2009-12-09 2011-06-16 Novellus Systems, Inc. Novel gap fill integration
US8604697B2 (en) 2009-12-09 2013-12-10 Jehara Corporation Apparatus for generating plasma
US8202803B2 (en) 2009-12-11 2012-06-19 Tokyo Electron Limited Method to remove capping layer of insulation dielectric in interconnect structures
US20130023062A1 (en) 2009-12-11 2013-01-24 Takeshi Masuda Thin film manufacturing apparatus, thin film manufacturing method and method for manufacturing semiconductor device
US20110139748A1 (en) * 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
US20110140229A1 (en) 2009-12-16 2011-06-16 Willy Rachmady Techniques for forming shallow trench isolation
US8274017B2 (en) 2009-12-18 2012-09-25 Applied Materials, Inc. Multifunctional heater/chiller pedestal for wide range wafer temperature control
US20110151677A1 (en) 2009-12-21 2011-06-23 Applied Materials, Inc. Wet oxidation process performed on a dielectric material formed from a flowable cvd process
US8501629B2 (en) 2009-12-23 2013-08-06 Applied Materials, Inc. Smooth SiConi etch for silicon-containing films
JP4927158B2 (ja) 2009-12-25 2012-05-09 東京エレクトロン株式会社 基板処理方法、その基板処理方法を実行させるためのプログラムを記録した記録媒体及び基板処理装置
US20110303146A1 (en) 2009-12-28 2011-12-15 Osamu Nishijima Plasma doping apparatus
US8329262B2 (en) 2010-01-05 2012-12-11 Applied Materials, Inc. Dielectric film formation using inert gas excitation
JP5710209B2 (ja) 2010-01-18 2015-04-30 東京エレクトロン株式会社 電磁波給電機構およびマイクロ波導入機構
JP5166458B2 (ja) 2010-01-22 2013-03-21 株式会社東芝 半導体装置及びその製造方法
JP5608384B2 (ja) 2010-02-05 2014-10-15 東京エレクトロン株式会社 半導体装置の製造方法及びプラズマエッチング装置
ATE551439T1 (de) 2010-02-08 2012-04-15 Roth & Rau Ag PARALLELER PLATTENREAKTOR ZUR GLEICHMÄßIGEN DÜNNFILMABLAGERUNG MIT REDUZIERTER WERKZEUGAUFSTELLFLÄCHE
US8946828B2 (en) 2010-02-09 2015-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having elevated structure and method of manufacturing the same
US8361338B2 (en) 2010-02-11 2013-01-29 Taiwan Semiconductor Manufacturing Company, Ltd. Hard mask removal method
US20110198034A1 (en) 2010-02-11 2011-08-18 Jennifer Sun Gas distribution showerhead with coating material for semiconductor processing
JP5476152B2 (ja) 2010-02-16 2014-04-23 積水化学工業株式会社 窒化シリコンのエッチング方法及び装置
US8456009B2 (en) 2010-02-18 2013-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure having an air-gap region and a method of manufacturing the same
JP5662079B2 (ja) * 2010-02-24 2015-01-28 東京エレクトロン株式会社 エッチング処理方法
US20110207332A1 (en) 2010-02-25 2011-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Thin film coated process kits for semiconductor manufacturing tools
KR101214758B1 (ko) * 2010-02-26 2012-12-21 성균관대학교산학협력단 식각 방법
JP2013521650A (ja) 2010-03-05 2013-06-10 アプライド マテリアルズ インコーポレイテッド ラジカル成分ｃｖｄによる共形層
SG10201501824XA (en) 2010-03-12 2015-05-28 Applied Materials Inc Atomic layer deposition chamber with multi inject
JP5450187B2 (ja) 2010-03-16 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US8772749B2 (en) 2010-03-16 2014-07-08 Sandisk 3D Llc Bottom electrodes for use with metal oxide resistivity switching layers
KR20130055582A (ko) 2010-03-17 2013-05-28 어플라이드 머티어리얼스, 인코포레이티드 원격 플라즈마 소오스 지원형 실리콘 함유 막 증착을 위한 장치 및 방법
US8435902B2 (en) 2010-03-17 2013-05-07 Applied Materials, Inc. Invertable pattern loading with dry etch
US8574447B2 (en) 2010-03-31 2013-11-05 Lam Research Corporation Inorganic rapid alternating process for silicon etch
US20110256692A1 (en) 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
US20110256421A1 (en) 2010-04-16 2011-10-20 United Technologies Corporation Metallic coating for single crystal alloys
US9309594B2 (en) * 2010-04-26 2016-04-12 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution of a projected plasma
US8288268B2 (en) 2010-04-29 2012-10-16 International Business Machines Corporation Microelectronic structure including air gap
US8562742B2 (en) 2010-04-30 2013-10-22 Applied Materials, Inc. Apparatus for radial delivery of gas to a chamber and methods of use thereof
US20110265951A1 (en) 2010-04-30 2011-11-03 Applied Materials, Inc. Twin chamber processing system
US20110265884A1 (en) 2010-04-30 2011-11-03 Applied Materials, Inc. Twin chamber processing system with shared vacuum pump
US8475674B2 (en) 2010-04-30 2013-07-02 Applied Materials, Inc. High-temperature selective dry etch having reduced post-etch solid residue
US8496756B2 (en) 2010-04-30 2013-07-30 Applied Materials, Inc. Methods for processing substrates in process systems having shared resources
US20110278260A1 (en) 2010-05-14 2011-11-17 Applied Materials, Inc. Inductive plasma source with metallic shower head using b-field concentrator
US8361906B2 (en) 2010-05-20 2013-01-29 Applied Materials, Inc. Ultra high selectivity ashable hard mask film
US20140154668A1 (en) 2010-05-21 2014-06-05 The Trustees Of Princeton University Structures for Enhancement of Local Electric Field, Light Absorption, Light Radiation, Material Detection and Methods for Making and Using of the Same.
JP5567392B2 (ja) 2010-05-25 2014-08-06 東京エレクトロン株式会社 プラズマ処理装置
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US8373239B2 (en) 2010-06-08 2013-02-12 International Business Machines Corporation Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric
JP5751895B2 (ja) 2010-06-08 2015-07-22 株式会社日立国際電気 半導体装置の製造方法、クリーニング方法および基板処理装置
JP2011258768A (ja) 2010-06-09 2011-12-22 Sumitomo Electric Ind Ltd 炭化珪素基板、エピタキシャル層付き基板、半導体装置および炭化珪素基板の製造方法
US20110304078A1 (en) 2010-06-14 2011-12-15 Applied Materials, Inc. Methods for removing byproducts from load lock chambers
US8928061B2 (en) 2010-06-30 2015-01-06 SanDisk Technologies, Inc. Three dimensional NAND device with silicide containing floating gates
US8349681B2 (en) 2010-06-30 2013-01-08 Sandisk Technologies Inc. Ultrahigh density monolithic, three dimensional vertical NAND memory device
JP5463224B2 (ja) 2010-07-09 2014-04-09 日本発條株式会社 流路付きプレートの製造方法、流路付きプレート、温度調節プレート、コールドプレート、及びシャワープレート
US20120009796A1 (en) 2010-07-09 2012-01-12 Applied Materials, Inc. Post-ash sidewall healing
KR101202352B1 (ko) 2010-07-19 2012-11-16 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
US8338211B2 (en) * 2010-07-27 2012-12-25 Amtech Systems, Inc. Systems and methods for charging solar cell layers
US8278203B2 (en) 2010-07-28 2012-10-02 Sandisk Technologies Inc. Metal control gate formation in non-volatile storage
US20130059448A1 (en) 2011-09-07 2013-03-07 Lam Research Corporation Pulsed Plasma Chamber in Dual Chamber Configuration
US9184028B2 (en) 2010-08-04 2015-11-10 Lam Research Corporation Dual plasma volume processing apparatus for neutral/ion flux control
US8869742B2 (en) 2010-08-04 2014-10-28 Lam Research Corporation Plasma processing chamber with dual axial gas injection and exhaust
US9449793B2 (en) 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
US8222125B2 (en) 2010-08-12 2012-07-17 Ovshinsky Innovation, Llc Plasma deposition of amorphous semiconductors at microwave frequencies
JP5198611B2 (ja) 2010-08-12 2013-05-15 株式会社東芝 ガス供給部材、プラズマ処理装置およびイットリア含有膜の形成方法
TW201213594A (en) 2010-08-16 2012-04-01 Air Liquide Etching of oxide materials
US20120017989A1 (en) 2010-08-24 2012-01-26 Pai-Chun Chang Metal and metal oxide surface texturing
KR20120022251A (ko) * 2010-09-01 2012-03-12 삼성전자주식회사 플라즈마 식각방법 및 그의 장치
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
US20120088356A1 (en) 2010-09-14 2012-04-12 Applied Materials, Inc. Integrated platform for in-situ doping and activation of substrates
KR20120029291A (ko) 2010-09-16 2012-03-26 삼성전자주식회사 반도체 소자 및 그 제조 방법
US8840754B2 (en) 2010-09-17 2014-09-23 Lam Research Corporation Polar regions for electrostatic de-chucking with lift pins
US8993434B2 (en) 2010-09-21 2015-03-31 Applied Materials, Inc. Methods for forming layers on a substrate
KR101209003B1 (ko) 2010-10-14 2012-12-06 주식회사 유진테크 3차원 구조의 메모리 소자를 제조하는 방법 및 장치
US8633423B2 (en) 2010-10-14 2014-01-21 Applied Materials, Inc. Methods and apparatus for controlling substrate temperature in a process chamber
US8183134B2 (en) 2010-10-19 2012-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces
US20120097330A1 (en) 2010-10-20 2012-04-26 Applied Materials, Inc. Dual delivery chamber design
US9123762B2 (en) 2010-10-22 2015-09-01 Applied Materials, Inc. Substrate support with symmetrical feed structure
JP5544343B2 (ja) 2010-10-29 2014-07-09 東京エレクトロン株式会社 成膜装置
US20130224960A1 (en) 2010-10-29 2013-08-29 Applied Materials, Inc. Methods for etching oxide layers using process gas pulsing
US9111994B2 (en) 2010-11-01 2015-08-18 Magnachip Semiconductor, Ltd. Semiconductor device and method of fabricating the same
US8133349B1 (en) 2010-11-03 2012-03-13 Lam Research Corporation Rapid and uniform gas switching for a plasma etch process
CN103168344A (zh) 2010-11-03 2013-06-19 应用材料公司 用于沉积碳化硅和碳氮化硅膜的设备和方法
US8389416B2 (en) 2010-11-22 2013-03-05 Tokyo Electron Limited Process for etching silicon with selectivity to silicon-germanium
KR20120058962A (ko) 2010-11-30 2012-06-08 삼성전자주식회사 반도체 장치의 제조 방법
US8475103B2 (en) 2010-12-09 2013-07-02 Hamilton Sundstand Corporation Sealing washer assembly for large diameter holes on flat surfaces
US8470713B2 (en) 2010-12-13 2013-06-25 International Business Machines Corporation Nitride etch for improved spacer uniformity
US8741778B2 (en) 2010-12-14 2014-06-03 Applied Materials, Inc. Uniform dry etch in two stages
US9719169B2 (en) 2010-12-20 2017-08-01 Novellus Systems, Inc. System and apparatus for flowable deposition in semiconductor fabrication
JP5728221B2 (ja) 2010-12-24 2015-06-03 東京エレクトロン株式会社 基板処理方法及び記憶媒体
US20120177846A1 (en) 2011-01-07 2012-07-12 Applied Materials, Inc. Radical steam cvd
KR101246170B1 (ko) 2011-01-13 2013-03-25 국제엘렉트릭코리아 주식회사 반도체 제조에 사용되는 분사부재 및 그것을 갖는 플라즈마 처리 장치
KR101529578B1 (ko) 2011-01-14 2015-06-19 성균관대학교산학협력단 플라즈마 기판 처리 장치 및 방법
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US20120180954A1 (en) 2011-01-18 2012-07-19 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8363476B2 (en) 2011-01-19 2013-01-29 Macronix International Co., Ltd. Memory device, manufacturing method and operating method of the same
US9018692B2 (en) 2011-01-19 2015-04-28 Macronix International Co., Ltd. Low cost scalable 3D memory
KR101744372B1 (ko) 2011-01-20 2017-06-07 도쿄엘렉트론가부시키가이샤 진공 처리 장치
US8723423B2 (en) 2011-01-25 2014-05-13 Advanced Energy Industries, Inc. Electrostatic remote plasma source
US9068265B2 (en) 2011-02-01 2015-06-30 Applied Materials, Inc. Gas distribution plate with discrete protective elements
KR101732936B1 (ko) 2011-02-14 2017-05-08 삼성전자주식회사 반도체 소자의 미세 패턴 형성 방법
US8771539B2 (en) 2011-02-22 2014-07-08 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch
US20120216955A1 (en) 2011-02-25 2012-08-30 Toshiba Materials Co., Ltd. Plasma processing apparatus
WO2012118847A2 (en) 2011-02-28 2012-09-07 Inpria Corportion Solution processible hardmarks for high resolusion lithography
US8791021B2 (en) 2011-03-01 2014-07-29 King Abdullah University Of Science And Technology Silicon germanium mask for deep silicon etching
KR101895307B1 (ko) 2011-03-01 2018-10-04 어플라이드 머티어리얼스, 인코포레이티드 듀얼 로드락 구성의 저감 및 스트립 프로세스 챔버
KR101904146B1 (ko) 2011-03-01 2018-10-04 어플라이드 머티어리얼스, 인코포레이티드 기판 이송 및 라디칼 구속을 위한 방법 및 장치
EP2681088B1 (en) 2011-03-02 2016-11-23 Game Changers, Llc Air cushion transport
KR101937115B1 (ko) 2011-03-04 2019-01-09 노벨러스 시스템즈, 인코포레이티드 하이브리드 세라믹 샤워헤드
FR2972563B1 (fr) 2011-03-07 2013-03-01 Altis Semiconductor Snc Procédé de traitement d'une couche de nitrure de métal oxydée
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US20120238108A1 (en) 2011-03-14 2012-09-20 Applied Materials, Inc. Two-stage ozone cure for dielectric films
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
TWI534291B (zh) 2011-03-18 2016-05-21 應用材料股份有限公司 噴淋頭組件
US8828245B2 (en) 2011-03-22 2014-09-09 Industrial Technology Research Institute Fabricating method of flexible circuit board
JP5837178B2 (ja) 2011-03-22 2015-12-24 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 化学気相堆積チャンバ用のライナアセンブリ
WO2012128348A1 (ja) 2011-03-23 2012-09-27 住友大阪セメント株式会社 静電チャック装置
US8980418B2 (en) 2011-03-24 2015-03-17 Uchicago Argonne, Llc Sequential infiltration synthesis for advanced lithography
JP6003011B2 (ja) 2011-03-31 2016-10-05 東京エレクトロン株式会社 基板処理装置
JP5815967B2 (ja) 2011-03-31 2015-11-17 東京エレクトロン株式会社 基板洗浄装置及び真空処理システム
JP5864879B2 (ja) 2011-03-31 2016-02-17 東京エレクトロン株式会社 基板処理装置及びその制御方法
US9196463B2 (en) 2011-04-07 2015-11-24 Varian Semiconductor Equipment Associates, Inc. System and method for plasma monitoring using microwaves
US8460569B2 (en) 2011-04-07 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Method and system for post-etch treatment of patterned substrate features
US20120258607A1 (en) 2011-04-11 2012-10-11 Lam Research Corporation E-Beam Enhanced Decoupled Source for Semiconductor Processing
US8815720B2 (en) 2011-04-12 2014-08-26 Varian Semiconductor Equipment Associates, Inc. Method of etching a workpiece
US9695510B2 (en) 2011-04-21 2017-07-04 Kurt J. Lesker Company Atomic layer deposition apparatus and process
US8415250B2 (en) 2011-04-29 2013-04-09 International Business Machines Corporation Method of forming silicide contacts of different shapes selectively on regions of a semiconductor device
US8298954B1 (en) 2011-05-06 2012-10-30 International Business Machines Corporation Sidewall image transfer process employing a cap material layer for a metal nitride layer
US20120285621A1 (en) 2011-05-10 2012-11-15 Applied Materials, Inc. Semiconductor chamber apparatus for dielectric processing
US9653327B2 (en) 2011-05-12 2017-05-16 Applied Materials, Inc. Methods of removing a material layer from a substrate using water vapor treatment
EP2707375A4 (en) 2011-05-13 2015-01-07 Greenct Canada MONO-METALLIC GROUP-11 PRECURSOR COMPOUNDS AND USE THEREOF IN A METAL SEPARATION
US9012283B2 (en) 2011-05-16 2015-04-21 International Business Machines Corporation Integrated circuit (IC) chip having both metal and silicon gate field effect transistors (FETs) and method of manufacture
US8663389B2 (en) 2011-05-21 2014-03-04 Andrew Peter Clarke Method and apparatus for crystal growth using a membrane-assisted semi-closed reactor
JP5563522B2 (ja) 2011-05-23 2014-07-30 東京エレクトロン株式会社 プラズマ処理装置
US8562785B2 (en) 2011-05-31 2013-10-22 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
JP6046128B2 (ja) 2011-05-31 2016-12-14 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 誘導結合プラズマ（ｉｃｐ）リアクタ用動的イオンラジカルシーブ及びイオンラジカルアパーチャ
KR101390900B1 (ko) 2011-05-31 2014-04-30 세메스 주식회사 기판처리장치
US8466073B2 (en) 2011-06-03 2013-06-18 Applied Materials, Inc. Capping layer for reduced outgassing
WO2012169747A2 (ko) 2011-06-09 2012-12-13 한국기초과학지원연구원 벨트형 자석을 포함한 플라즈마 발생원 및 이를 이용한 박막 증착 시스템
US8637372B2 (en) 2011-06-29 2014-01-28 GlobalFoundries, Inc. Methods for fabricating a FINFET integrated circuit on a bulk silicon substrate
US8883637B2 (en) 2011-06-30 2014-11-11 Novellus Systems, Inc. Systems and methods for controlling etch selectivity of various materials
US9117867B2 (en) 2011-07-01 2015-08-25 Applied Materials, Inc. Electrostatic chuck assembly
US9054048B2 (en) 2011-07-05 2015-06-09 Applied Materials, Inc. NH3 containing plasma nitridation of a layer on a substrate
CN102867748B (zh) 2011-07-06 2015-09-23 中国科学院微电子研究所 一种晶体管及其制作方法和包括该晶体管的半导体芯片
JP5902896B2 (ja) 2011-07-08 2016-04-13 東京エレクトロン株式会社 基板処理装置
KR20110086540A (ko) 2011-07-12 2011-07-28 조인숙 불소화합물을 이용한 필름의 선택적인 식각 방법
US8617411B2 (en) 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
US8741775B2 (en) 2011-07-20 2014-06-03 Applied Materials, Inc. Method of patterning a low-K dielectric film
US8921177B2 (en) 2011-07-22 2014-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating an integrated circuit device
JP2013033965A (ja) 2011-07-29 2013-02-14 Semes Co Ltd 基板処理装置、基板処理設備、及び基板処理方法
US20130034666A1 (en) 2011-08-01 2013-02-07 Applied Materials, Inc. Inductive plasma sources for wafer processing and chamber cleaning
US8771536B2 (en) 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
KR101271247B1 (ko) 2011-08-02 2013-06-07 주식회사 유진테크 에피택셜 공정을 위한 반도체 제조설비
JP5893864B2 (ja) * 2011-08-02 2016-03-23 東京エレクトロン株式会社 プラズマエッチング方法
CN102915902B (zh) 2011-08-02 2015-11-25 中微半导体设备(上海)有限公司 一种电容耦合式的等离子体处理装置及其基片加工方法
US8735291B2 (en) 2011-08-25 2014-05-27 Tokyo Electron Limited Method for etching high-k dielectric using pulsed bias power
US8679982B2 (en) 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
US20150270135A1 (en) 2011-09-01 2015-09-24 Tel Epion Inc. Gas cluster ion beam etching process
WO2013033315A2 (en) 2011-09-01 2013-03-07 Veeco Instruments Inc. Wafer carrier with thermal features
US8679983B2 (en) 2011-09-01 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
US9039911B2 (en) 2012-08-27 2015-05-26 Lam Research Corporation Plasma-enhanced etching in an augmented plasma processing system
US20130217243A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Doping of dielectric layers
US8808562B2 (en) 2011-09-12 2014-08-19 Tokyo Electron Limited Dry metal etching method
US20130260564A1 (en) 2011-09-26 2013-10-03 Applied Materials, Inc. Insensitive dry removal process for semiconductor integration
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
US8664012B2 (en) 2011-09-30 2014-03-04 Tokyo Electron Limited Combined silicon oxide etch and contamination removal process
US8551891B2 (en) 2011-10-04 2013-10-08 Applied Materials, Inc. Remote plasma burn-in
WO2013050243A1 (en) 2011-10-06 2013-04-11 Asml Netherlands B.V. Chuck, lithography apparatus and method of using a chuck
US9653267B2 (en) 2011-10-06 2017-05-16 Applied Materials, Inc. Temperature controlled chamber liner
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
US20130087309A1 (en) 2011-10-11 2013-04-11 Applied Materials, Inc. Substrate support with temperature control
JP5740281B2 (ja) 2011-10-20 2015-06-24 東京エレクトロン株式会社 金属膜のドライエッチング方法
US9666414B2 (en) * 2011-10-27 2017-05-30 Applied Materials, Inc. Process chamber for etching low k and other dielectric films
US9574268B1 (en) 2011-10-28 2017-02-21 Asm America, Inc. Pulsed valve manifold for atomic layer deposition
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US20130107415A1 (en) 2011-10-28 2013-05-02 Applied Materials, Inc. Electrostatic chuck
US20130115372A1 (en) 2011-11-08 2013-05-09 Primestar Solar, Inc. High emissivity distribution plate in vapor deposition apparatus and processes
WO2013070438A1 (en) 2011-11-08 2013-05-16 Applied Materials, Inc. Precursor distribution features for improved deposition uniformity
JP5779482B2 (ja) 2011-11-15 2015-09-16 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US8652298B2 (en) 2011-11-21 2014-02-18 Lam Research Corporation Triode reactor design with multiple radiofrequency powers
US9508530B2 (en) 2011-11-21 2016-11-29 Lam Research Corporation Plasma processing chamber with flexible symmetric RF return strap
US8898889B2 (en) 2011-11-22 2014-12-02 Lam Research Corporation Chuck assembly for plasma processing
US8900364B2 (en) 2011-11-29 2014-12-02 Intermolecular, Inc. High productivity vapor processing system
US8440523B1 (en) 2011-12-07 2013-05-14 International Business Machines Corporation Micromechanical device and methods to fabricate same using hard mask resistant to structure release etch
US20130149866A1 (en) 2011-12-12 2013-06-13 Texas Instruments Incorporated Baffle plate for semiconductor processing apparatus
US8988848B2 (en) 2011-12-15 2015-03-24 Applied Materials, Inc. Extended and independent RF powered cathode substrate for extreme edge tunability
KR20130072911A (ko) 2011-12-22 2013-07-02 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 그 제조 방법
KR101878311B1 (ko) 2011-12-30 2018-07-17 삼성전자주식회사 ｈｉｇｈ-Ｋ막을 스페이서 에치 스톱으로 이용하는 반도체 소자 형성 방법 및 관련된 소자
US8603891B2 (en) 2012-01-20 2013-12-10 Micron Technology, Inc. Methods for forming vertical memory devices and apparatuses
US8747686B2 (en) 2012-01-27 2014-06-10 Applied Materials, Inc. Methods of end point detection for substrate fabrication processes
JP6010406B2 (ja) 2012-01-27 2016-10-19 東京エレクトロン株式会社 マイクロ波放射機構、マイクロ波プラズマ源および表面波プラズマ処理装置
SG11201403527UA (en) 2012-02-08 2014-09-26 Iwatani Corp Method for treating inner surface of chlorine trifluoride supply passage in apparatus using chlorine trifluoride
US20130175654A1 (en) 2012-02-10 2013-07-11 Sylvain Muckenhirn Bulk nanohole structures for thermoelectric devices and methods for making the same
GB2499816A (en) * 2012-02-29 2013-09-04 Oxford Instr Nanotechnology Tools Ltd Controlling deposition and etching in a chamber with fine time control of parameters and gas flow
CN106847737B (zh) 2012-02-29 2020-11-13 应用材料公司 配置中的除污及剥除处理腔室
TWI602283B (zh) 2012-03-27 2017-10-11 諾發系統有限公司 鎢特徵部塡充
US8747610B2 (en) 2012-03-30 2014-06-10 Tokyo Electron Limited Plasma source pumping and gas injection baffle
US8937800B2 (en) 2012-04-24 2015-01-20 Applied Materials, Inc. Electrostatic chuck with advanced RF and temperature uniformity
US9162236B2 (en) 2012-04-26 2015-10-20 Applied Materials, Inc. Proportional and uniform controlled gas flow delivery for dry plasma etch apparatus
US20130284369A1 (en) 2012-04-26 2013-10-31 Applied Materials, Inc. Two-phase operation of plasma chamber by phase locked loop
US9161428B2 (en) 2012-04-26 2015-10-13 Applied Materials, Inc. Independent control of RF phases of separate coils of an inductively coupled plasma reactor
KR20170109690A (ko) 2012-04-26 2017-09-29 어플라이드 머티어리얼스, 인코포레이티드 Ｅｓｃ 본딩 접착제 부식을 방지하기 위한 방법들 및 장치
US9948214B2 (en) 2012-04-26 2018-04-17 Applied Materials, Inc. High temperature electrostatic chuck with real-time heat zone regulating capability
JP6005579B2 (ja) 2012-04-27 2016-10-12 日本碍子株式会社 半導体製造装置用部材
US9394615B2 (en) 2012-04-27 2016-07-19 Applied Materials, Inc. Plasma resistant ceramic coated conductive article
CN103377979B (zh) 2012-04-30 2016-06-08 细美事有限公司 调节板和具有该调节板的用于处理基板的装置
US9976215B2 (en) 2012-05-01 2018-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor film formation apparatus and process
JP2013235912A (ja) 2012-05-08 2013-11-21 Tokyo Electron Ltd 被処理基体をエッチングする方法、及びプラズマエッチング装置
CN103388132B (zh) 2012-05-11 2015-11-25 中微半导体设备(上海)有限公司 气体喷淋头、其制造方法及薄膜生长反应器
US20130298942A1 (en) 2012-05-14 2013-11-14 Applied Materials, Inc. Etch remnant removal
KR101917815B1 (ko) 2012-05-31 2018-11-13 에스케이하이닉스 주식회사 에어갭을 구비한 반도체장치 및 그 제조 방법
FR2991320B1 (fr) 2012-06-05 2014-06-27 Commissariat Energie Atomique Procede de preparation d'amines methylees
US8974164B2 (en) 2012-06-26 2015-03-10 Newfrey Llc Plastic high heat fastener
US8916477B2 (en) 2012-07-02 2014-12-23 Novellus Systems, Inc. Polysilicon etch with high selectivity
US9034773B2 (en) 2012-07-02 2015-05-19 Novellus Systems, Inc. Removal of native oxide with high selectivity
US8802572B2 (en) 2012-07-10 2014-08-12 Applied Materials, Inc. Method of patterning a low-k dielectric film
KR101989514B1 (ko) 2012-07-11 2019-06-14 삼성전자주식회사 반도체 소자 및 그 제조 방법
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9184030B2 (en) 2012-07-19 2015-11-10 Lam Research Corporation Edge exclusion control with adjustable plasma exclusion zone ring
US9631273B2 (en) 2012-07-25 2017-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for dielectric deposition process
JP6160619B2 (ja) 2012-08-01 2017-07-12 Tdk株式会社 フェライト磁性材料、フェライト焼結磁石及びモータ
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US8772888B2 (en) 2012-08-10 2014-07-08 Avalanche Technology Inc. MTJ MRAM with stud patterning
US20140051253A1 (en) 2012-08-14 2014-02-20 Lam Research Corporation Plasma baffle ring for a plasma processing apparatus and method of use
US8747680B1 (en) 2012-08-14 2014-06-10 Everspin Technologies, Inc. Method of manufacturing a magnetoresistive-based device
US9364871B2 (en) 2012-08-23 2016-06-14 Applied Materials, Inc. Method and hardware for cleaning UV chambers
WO2014035933A1 (en) 2012-08-28 2014-03-06 Applied Materials, Inc. Methods and apparatus for forming tantalum silicate layers on germanium or iii-v semiconductor devices
US20140062285A1 (en) 2012-08-29 2014-03-06 Mks Instruments, Inc. Method and Apparatus for a Large Area Inductive Plasma Source
US9121097B2 (en) 2012-08-31 2015-09-01 Novellus Systems, Inc. Variable showerhead flow by varying internal baffle conductance
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
JP6027374B2 (ja) 2012-09-12 2016-11-16 東京エレクトロン株式会社 プラズマ処理装置及びフィルタユニット
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US20140099794A1 (en) 2012-09-21 2014-04-10 Applied Materials, Inc. Radical chemistry modulation and control using multiple flow pathways
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US9018022B2 (en) 2012-09-24 2015-04-28 Lam Research Corporation Showerhead electrode assembly in a capacitively coupled plasma processing apparatus
TWI604528B (zh) 2012-10-02 2017-11-01 應用材料股份有限公司 使用電漿預處理與高溫蝕刻劑沉積的方向性二氧化矽蝕刻
TWI591712B (zh) 2012-10-03 2017-07-11 應用材料股份有限公司 使用低溫蝕刻劑沉積與電漿後處理的方向性二氧化矽蝕刻
KR102137617B1 (ko) 2012-10-19 2020-07-24 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
CN103794460B (zh) 2012-10-29 2016-12-21 中微半导体设备(上海)有限公司 用于半导体装置性能改善的涂层
US9165783B2 (en) 2012-11-01 2015-10-20 Applied Materials, Inc. Method of patterning a low-k dielectric film
JP6035117B2 (ja) 2012-11-09 2016-11-30 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
US8765574B2 (en) 2012-11-09 2014-07-01 Applied Materials, Inc. Dry etch process
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9064816B2 (en) 2012-11-30 2015-06-23 Applied Materials, Inc. Dry-etch for selective oxidation removal
US9777564B2 (en) 2012-12-03 2017-10-03 Pyrophase, Inc. Stimulating production from oil wells using an RF dipole antenna
WO2014092856A1 (en) 2012-12-14 2014-06-19 The Penn State Research Foundation Ultra-high speed anisotropic reactive ion etching
US9982343B2 (en) 2012-12-14 2018-05-29 Applied Materials, Inc. Apparatus for providing plasma to a process chamber
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
JP6173684B2 (ja) 2012-12-25 2017-08-02 株式会社日立ハイテクノロジーズ 半導体装置の製造方法
JP5962773B2 (ja) 2012-12-28 2016-08-03 ニュー パワー プラズマ カンパニー リミテッド プラズマ反応器及びこれを用いたプラズマ点火方法
JP6328931B2 (ja) 2012-12-31 2018-05-23 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジストパターントリミング方法
US9165823B2 (en) 2013-01-08 2015-10-20 Macronix International Co., Ltd. 3D stacking semiconductor device and manufacturing method thereof
US9093389B2 (en) 2013-01-16 2015-07-28 Applied Materials, Inc. Method of patterning a silicon nitride dielectric film
JP6080571B2 (ja) 2013-01-31 2017-02-15 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US8970114B2 (en) 2013-02-01 2015-03-03 Lam Research Corporation Temperature controlled window of a plasma processing chamber component
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
JP2014154421A (ja) 2013-02-12 2014-08-25 Tokyo Electron Ltd プラズマ処理装置、プラズマ処理方法、および高周波発生器
US20140234466A1 (en) 2013-02-21 2014-08-21 HGST Netherlands B.V. Imprint mold and method for making using sidewall spacer line doubling
US9449795B2 (en) 2013-02-28 2016-09-20 Novellus Systems, Inc. Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
TWI487004B (zh) 2013-03-01 2015-06-01 Winbond Electronics Corp 圖案化的方法及記憶體元件的形成方法
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
KR102064914B1 (ko) * 2013-03-06 2020-01-10 삼성전자주식회사 식각 공정 장치 및 식각 공정 방법
US8801952B1 (en) 2013-03-07 2014-08-12 Applied Materials, Inc. Conformal oxide dry etch
US10170282B2 (en) 2013-03-08 2019-01-01 Applied Materials, Inc. Insulated semiconductor faceplate designs
US8859433B2 (en) 2013-03-11 2014-10-14 International Business Machines Corporation DSA grapho-epitaxy process with etch stop material
US20140262031A1 (en) 2013-03-12 2014-09-18 Sergey G. BELOSTOTSKIY Multi-mode etch chamber source assembly
US8946023B2 (en) 2013-03-12 2015-02-03 Sandisk Technologies Inc. Method of making a vertical NAND device using sequential etching of multilayer stacks
KR102021988B1 (ko) 2013-03-12 2019-09-17 삼성전자주식회사 반도체 소자 및 그의 제조 방법
TWI591211B (zh) 2013-03-13 2017-07-11 應用材料股份有限公司 蝕刻包含過渡金屬的膜之方法
US20140273525A1 (en) 2013-03-13 2014-09-18 Intermolecular, Inc. Atomic Layer Deposition of Reduced-Leakage Post-Transition Metal Oxide Films
CN105122431A (zh) * 2013-03-13 2015-12-02 应用材料公司 脉冲式直流等离子体蚀刻方法以及设备
US20140273451A1 (en) 2013-03-13 2014-09-18 Applied Materials, Inc. Tungsten deposition sequence
US9117670B2 (en) 2013-03-14 2015-08-25 Sunedison Semiconductor Limited (Uen201334164H) Inject insert liner assemblies for chemical vapor deposition systems and methods of using same
US9006106B2 (en) 2013-03-14 2015-04-14 Applied Materials, Inc. Method of removing a metal hardmask
US9556507B2 (en) 2013-03-14 2017-01-31 Applied Materials, Inc. Yttria-based material coated chemical vapor deposition chamber heater
US9411237B2 (en) 2013-03-14 2016-08-09 Applied Materials, Inc. Resist hardening and development processes for semiconductor device manufacturing
US9276011B2 (en) 2013-03-15 2016-03-01 Micron Technology, Inc. Cell pillar structures and integrated flows
US8946076B2 (en) 2013-03-15 2015-02-03 Micron Technology, Inc. Methods of fabricating integrated structures, and methods of forming vertically-stacked memory cells
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9224583B2 (en) 2013-03-15 2015-12-29 Lam Research Corporation System and method for heating plasma exposed surfaces
US20140263182A1 (en) * 2013-03-15 2014-09-18 Tokyo Electron Limited Dc pulse etcher
CN105142702A (zh) 2013-03-15 2015-12-09 皮博士研究所有限责任公司 一次性使用的针组件和方法
JP5386046B1 (ja) 2013-03-27 2014-01-15 エピクルー株式会社 サセプタ支持部およびこのサセプタ支持部を備えるエピタキシャル成長装置
US10125422B2 (en) 2013-03-27 2018-11-13 Applied Materials, Inc. High impedance RF filter for heater with impedance tuning device
US10941501B2 (en) 2013-03-29 2021-03-09 Analytical Specialties, Inc. Method and composition for metal finishing
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
US9230819B2 (en) 2013-04-05 2016-01-05 Lam Research Corporation Internal plasma grid applications for semiconductor fabrication in context of ion-ion plasma processing
US20140308758A1 (en) 2013-04-10 2014-10-16 Applied Materials, Inc. Patterning magnetic memory
US20140311581A1 (en) 2013-04-19 2014-10-23 Applied Materials, Inc. Pressure controller configuration for semiconductor processing applications
TWI600786B (zh) 2013-05-01 2017-10-01 應用材料股份有限公司 用於腔室清潔或預清潔製程之鈷移除
US9449797B2 (en) 2013-05-07 2016-09-20 Lam Research Corporation Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface
US20140335679A1 (en) * 2013-05-09 2014-11-13 Applied Materials, Inc. Methods for etching a substrate
US9720022B2 (en) 2015-05-19 2017-08-01 Lam Research Corporation Systems and methods for providing characteristics of an impedance matching model for use with matching networks
US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US20140342569A1 (en) 2013-05-16 2014-11-20 Applied Materials, Inc. Near surface etch selectivity enhancement
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
US9082826B2 (en) 2013-05-24 2015-07-14 Lam Research Corporation Methods and apparatuses for void-free tungsten fill in three-dimensional semiconductor features
JP6002087B2 (ja) 2013-05-29 2016-10-05 東京エレクトロン株式会社 グラフェンの生成方法
US20140357083A1 (en) 2013-05-31 2014-12-04 Applied Materials, Inc. Directed block copolymer self-assembly patterns for advanced photolithography applications
JP6180799B2 (ja) * 2013-06-06 2017-08-16 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR102038647B1 (ko) 2013-06-21 2019-10-30 주식회사 원익아이피에스 기판 지지 장치 및 이를 구비하는 기판 처리 장치
US9677176B2 (en) 2013-07-03 2017-06-13 Novellus Systems, Inc. Multi-plenum, dual-temperature showerhead
US10808317B2 (en) 2013-07-03 2020-10-20 Lam Research Corporation Deposition apparatus including an isothermal processing zone
US8871651B1 (en) 2013-07-12 2014-10-28 Globalfoundries Inc. Mask formation processing
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US8932947B1 (en) 2013-07-23 2015-01-13 Applied Materials, Inc. Methods for forming a round bottom silicon trench recess for semiconductor applications
US9362163B2 (en) 2013-07-30 2016-06-07 Lam Research Corporation Methods and apparatuses for atomic layer cleaning of contacts and vias
KR102154112B1 (ko) 2013-08-01 2020-09-09 삼성전자주식회사 금속 배선들을 포함하는 반도체 장치 및 그 제조 방법
US9070635B2 (en) 2013-08-09 2015-06-30 United Microelectronics Corp. Removing method
US20150050812A1 (en) 2013-08-13 2015-02-19 Globalfoundries Inc. Wafer-less auto clean of processing chamber
US9543163B2 (en) 2013-08-20 2017-01-10 Applied Materials, Inc. Methods for forming features in a material layer utilizing a combination of a main etching and a cyclical etching process
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
JP5837012B2 (ja) 2013-09-12 2015-12-24 ラピスセミコンダクタ株式会社 モニタリング方法、プラズマモニタリング方法、モニタリングシステム及びプラズマモニタリングシステム
US9230980B2 (en) 2013-09-15 2016-01-05 Sandisk Technologies Inc. Single-semiconductor-layer channel in a memory opening for a three-dimensional non-volatile memory device
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US9051655B2 (en) 2013-09-16 2015-06-09 Applied Materials, Inc. Boron ionization for aluminum oxide etch enhancement
US8980758B1 (en) 2013-09-17 2015-03-17 Applied Materials, Inc. Methods for etching an etching stop layer utilizing a cyclical etching process
US9685371B2 (en) 2013-09-27 2017-06-20 Applied Materials, Inc. Method of enabling seamless cobalt gap-fill
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
US9214377B2 (en) 2013-10-31 2015-12-15 Applied Materials, Inc. Methods for silicon recess structures in a substrate by utilizing a doping layer
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
SG11201600440VA (en) 2013-11-06 2016-02-26 Mattson Tech Inc Novel mask removal process strategy for vertical nand device
WO2015069428A1 (en) 2013-11-06 2015-05-14 Applied Materials, Inc. Particle generation suppressor by dc bias modulation
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US8945414B1 (en) 2013-11-13 2015-02-03 Intermolecular, Inc. Oxide removal by remote plasma treatment with fluorine and oxygen radicals
US9330937B2 (en) 2013-11-13 2016-05-03 Intermolecular, Inc. Etching of semiconductor structures that include titanium-based layers
US9514953B2 (en) 2013-11-20 2016-12-06 Applied Materials, Inc. Methods for barrier layer removal
FR3013503B1 (fr) * 2013-11-20 2015-12-18 Commissariat Energie Atomique Procede de gravure selective d’un masque dispose sur un substrat silicie
KR102237700B1 (ko) 2013-11-27 2021-04-08 삼성전자주식회사 수직형 메모리 장치 및 그 제조 방법
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
WO2015082083A1 (en) 2013-12-04 2015-06-11 Nec Europe Ltd. Method and system for generating a virtual device resource accessible by an application
US9620382B2 (en) * 2013-12-06 2017-04-11 University Of Maryland, College Park Reactor for plasma-based atomic layer etching of materials
US9312168B2 (en) 2013-12-16 2016-04-12 Applied Materials, Inc. Air gap structure integration using a processing system
US20150170926A1 (en) 2013-12-16 2015-06-18 David J. Michalak Dielectric layers having ordered elongate pores
US20150170879A1 (en) 2013-12-17 2015-06-18 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US20150170943A1 (en) 2013-12-17 2015-06-18 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US20150171008A1 (en) 2013-12-17 2015-06-18 GLOBAL FOUNDRIES Singapore Ptd. Ltd. Integrated circuits with dummy contacts and methods for producing such integrated circuits
KR102102787B1 (ko) 2013-12-17 2020-04-22 삼성전자주식회사 기판 처리 장치 및 블록커 플레이트 어셈블리
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
EP3087587A4 (en) 2013-12-27 2017-08-02 Intel Corporation Technologies for selectively etching oxide and nitride materials and products formed using the same
US9622375B2 (en) 2013-12-31 2017-04-11 Applied Materials, Inc. Electrostatic chuck with external flow adjustments for improved temperature distribution
US9111907B2 (en) 2014-01-02 2015-08-18 Globalfoundries Inc. Silicide protection during contact metallization and resulting semiconductor structures
KR102128465B1 (ko) 2014-01-03 2020-07-09 삼성전자주식회사 수직 구조의 비휘발성 메모리 소자
US9945033B2 (en) 2014-01-06 2018-04-17 Applied Materials, Inc. High efficiency inductively coupled plasma source with customized RF shield for plasma profile control
US20150200042A1 (en) 2014-01-10 2015-07-16 Applied Materials, Inc. Recessing ultra-low k dielectric using remote plasma source
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9299577B2 (en) 2014-01-24 2016-03-29 Applied Materials, Inc. Methods for etching a dielectric barrier layer in a dual damascene structure
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US20150214066A1 (en) 2014-01-27 2015-07-30 Applied Materials, Inc. Method for material removal in dry etch reactor
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
JP6312451B2 (ja) 2014-01-29 2018-04-18 東京エレクトロン株式会社 給電部カバー構造及び半導体製造装置
US9502218B2 (en) 2014-01-31 2016-11-22 Applied Materials, Inc. RPS assisted RF plasma source for semiconductor processing
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9378975B2 (en) 2014-02-10 2016-06-28 Tokyo Electron Limited Etching method to form spacers having multiple film layers
US9305749B2 (en) 2014-02-10 2016-04-05 Applied Materials, Inc. Methods of directing magnetic fields in a plasma source, and associated systems
JP6059165B2 (ja) 2014-02-19 2017-01-11 東京エレクトロン株式会社 エッチング方法、及びプラズマ処理装置
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9209031B2 (en) 2014-03-07 2015-12-08 Sandisk Technologies Inc. Metal replacement process for low resistance source contacts in 3D NAND
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
US9190290B2 (en) * 2014-03-31 2015-11-17 Applied Materials, Inc. Halogen-free gas-phase silicon etch
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
KR102175763B1 (ko) 2014-04-09 2020-11-09 삼성전자주식회사 반도체 메모리 장치 및 이의 제조 방법
US9177853B1 (en) 2014-05-14 2015-11-03 Sandisk Technologies Inc. Barrier layer stack for bit line air gap formation
CN104392963B (zh) 2014-05-16 2017-07-11 中国科学院微电子研究所 三维半导体器件制造方法
US9520485B2 (en) 2014-05-21 2016-12-13 Macronix International Co., Ltd. 3D independent double gate flash memory on bounded conductor layer
US9881788B2 (en) 2014-05-22 2018-01-30 Lam Research Corporation Back side deposition apparatus and applications
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US20150345029A1 (en) 2014-05-28 2015-12-03 Applied Materials, Inc. Metal removal
US10077497B2 (en) 2014-05-30 2018-09-18 Lam Research Corporation Hollow cathode discharge (HCD) suppressing capacitively coupled plasma electrode and gas distribution faceplate
US9773683B2 (en) 2014-06-09 2017-09-26 American Air Liquide, Inc. Atomic layer or cyclic plasma etching chemistries and processes
US9666449B2 (en) 2014-06-17 2017-05-30 Micron Technology, Inc. Conductors having a variable concentration of germanium for governing removal rates of the conductor during control gate formation
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US20150371865A1 (en) 2014-06-19 2015-12-24 Applied Materials, Inc. High selectivity gas phase silicon nitride removal
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9502518B2 (en) 2014-06-23 2016-11-22 Stmicroelectronics, Inc. Multi-channel gate-all-around FET
US20150371861A1 (en) 2014-06-23 2015-12-24 Applied Materials, Inc. Protective silicon oxide patterning
KR102248205B1 (ko) 2014-06-25 2021-05-04 삼성전자주식회사 수직 채널 및 에어 갭을 갖는 반도체 소자
US9768270B2 (en) 2014-06-25 2017-09-19 Sandisk Technologies Llc Method of selectively depositing floating gate material in a memory device
US10487399B2 (en) 2014-06-26 2019-11-26 Applied Materials, Inc. Atomic layer deposition chamber with counter-flow multi inject
US9840777B2 (en) 2014-06-27 2017-12-12 Applied Materials, Inc. Apparatus for radical-based deposition of dielectric films
US10196741B2 (en) 2014-06-27 2019-02-05 Applied Materials, Inc. Wafer placement and gap control optimization through in situ feedback
KR20160002543A (ko) 2014-06-30 2016-01-08 세메스 주식회사 기판 처리 장치
TWI654332B (zh) 2014-07-02 2019-03-21 美商應用材料股份有限公司 用於電漿處理的多區域基座
US20160005833A1 (en) 2014-07-03 2016-01-07 Applied Materials, Inc. Feol low-k spacers
US9911579B2 (en) 2014-07-03 2018-03-06 Applied Materials, Inc. Showerhead having a detachable high resistivity gas distribution plate
US10192717B2 (en) 2014-07-21 2019-01-29 Applied Materials, Inc. Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US20160043099A1 (en) 2014-08-05 2016-02-11 Applied Materials, Inc. Wordline 3d flash memory air gap
US20160042968A1 (en) 2014-08-05 2016-02-11 Applied Materials, Inc. Integrated oxide and si etch for 3d cell channel mobility improvements
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9460898B2 (en) 2014-08-08 2016-10-04 Applied Materials, Inc. Plasma generation chamber with smooth plasma resistant coating
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
JP6315809B2 (ja) 2014-08-28 2018-04-25 東京エレクトロン株式会社 エッチング方法
US9558928B2 (en) 2014-08-29 2017-01-31 Lam Research Corporation Contact clean in high-aspect ratio structures
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9735009B2 (en) 2014-09-15 2017-08-15 Applied Materials, Inc. Pre-clean of silicon germanium for pre-metal contact at source and drain and pre-high K at channel
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US10083818B2 (en) 2014-09-24 2018-09-25 Applied Materials, Inc. Auto frequency tuned remote plasma source
US9478434B2 (en) 2014-09-24 2016-10-25 Applied Materials, Inc. Chlorine-based hardmask removal
JP5764246B1 (ja) 2014-09-24 2015-08-19 株式会社日立国際電気 基板処理装置、ガス導入シャフト及びガス供給プレート
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
CN105448737A (zh) 2014-09-30 2016-03-30 联华电子股份有限公司 用以形成硅凹槽的蚀刻制作工艺方法与鳍式场效晶体管
US20160099173A1 (en) 2014-10-03 2016-04-07 Applied Materials, Inc. Methods for etching a barrier layer for an interconnection structure for semiconductor applications
US10407771B2 (en) 2014-10-06 2019-09-10 Applied Materials, Inc. Atomic layer deposition chamber with thermal lid
US9240315B1 (en) 2014-10-10 2016-01-19 Applied Materials, Inc. CVD oxide surface pre-conditioning by inductively coupled O2 plasma
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
JP6789932B2 (ja) 2014-10-17 2020-11-25 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 調整可能ガスフロー制御のためのガス分離器を含むガス供給配送配置
US10008404B2 (en) 2014-10-17 2018-06-26 Applied Materials, Inc. Electrostatic chuck assembly for high temperature processes
US9905400B2 (en) 2014-10-17 2018-02-27 Applied Materials, Inc. Plasma reactor with non-power-absorbing dielectric gas shower plate assembly
US9652567B2 (en) 2014-10-20 2017-05-16 Lam Research Corporation System, method and apparatus for improving accuracy of RF transmission models for selected portions of an RF transmission path
US9825051B2 (en) 2014-10-22 2017-11-21 Sandisk Technologies Llc Three dimensional NAND device containing fluorine doped layer and method of making thereof
US9508529B2 (en) 2014-10-23 2016-11-29 Lam Research Corporation System, method and apparatus for RF power compensation in a plasma processing system
US9202708B1 (en) 2014-10-24 2015-12-01 Applied Materials, Inc. Doped silicon oxide etch
US10102321B2 (en) 2014-10-24 2018-10-16 Lam Research Corporation System, method and apparatus for refining radio frequency transmission system models
US9419135B2 (en) 2014-11-13 2016-08-16 Sandisk Technologies Llc Three dimensional NAND device having reduced wafer bowing and method of making thereof
US9466494B2 (en) 2014-11-18 2016-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Selective growth for high-aspect ration metal fill
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9799509B2 (en) 2014-11-26 2017-10-24 Asm Ip Holding B.V. Cyclic aluminum oxynitride deposition
US9620377B2 (en) 2014-12-04 2017-04-11 Lab Research Corporation Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch
JP6320282B2 (ja) 2014-12-05 2018-05-09 東京エレクトロン株式会社 エッチング方法
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10781518B2 (en) 2014-12-11 2020-09-22 Applied Materials, Inc. Gas cooled electrostatic chuck (ESC) having a gas channel formed therein and coupled to a gas box on both ends of the gas channel
US9536749B2 (en) * 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
US20160181116A1 (en) 2014-12-18 2016-06-23 Lam Research Corporation Selective nitride etch
US9396961B2 (en) 2014-12-22 2016-07-19 Lam Research Corporation Integrated etch/clean for dielectric etch applications
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US10134750B2 (en) 2014-12-30 2018-11-20 Toshiba Memory Corporation Stacked type semiconductor memory device and method for manufacturing the same
US9633867B2 (en) 2015-01-05 2017-04-25 Lam Research Corporation Method and apparatus for anisotropic tungsten etching
US9431268B2 (en) 2015-01-05 2016-08-30 Lam Research Corporation Isotropic atomic layer etch for silicon and germanium oxides
US9425041B2 (en) 2015-01-06 2016-08-23 Lam Research Corporation Isotropic atomic layer etch for silicon oxides using no activation
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9779919B2 (en) * 2015-01-09 2017-10-03 Hitachi High-Technologies Corporation Plasma processing apparatus and plasma processing method
US10217614B2 (en) 2015-01-12 2019-02-26 Lam Research Corporation Ceramic gas distribution plate with embedded electrode
JP2016134530A (ja) 2015-01-20 2016-07-25 株式会社東芝 加工制御装置、加工制御プログラムおよび加工制御方法
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US10354860B2 (en) 2015-01-29 2019-07-16 Versum Materials Us, Llc Method and precursors for manufacturing 3D devices
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US20160237570A1 (en) 2015-02-13 2016-08-18 Applied Materials, Inc. Gas delivery apparatus for process equipment
JP6396822B2 (ja) * 2015-02-16 2018-09-26 東京エレクトロン株式会社 プラズマ処理装置のサセプタの電位を制御する方法
US9275834B1 (en) 2015-02-20 2016-03-01 Applied Materials, Inc. Selective titanium nitride etch
US9343358B1 (en) 2015-02-23 2016-05-17 Sandisk Technologies Inc. Three-dimensional memory device with stress compensation layer within a word line stack
CN107548520B (zh) 2015-02-24 2021-05-25 东芝存储器株式会社 半导体存储装置及其制造方法
KR20170121243A (ko) 2015-02-25 2017-11-01 어플라이드 머티어리얼스, 인코포레이티드 금속 질화물의 선택적 제거를 위해 알킬 아민들을 사용하기 위한 방법들 및 장치
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
TWI670749B (zh) 2015-03-13 2019-09-01 美商應用材料股份有限公司 耦接至工藝腔室的電漿源
US10153133B2 (en) 2015-03-23 2018-12-11 Applied Materials, Inc. Plasma reactor having digital control over rotation frequency of a microwave field with direct up-conversion
US9478433B1 (en) 2015-03-30 2016-10-25 Applied Materials, Inc. Cyclic spacer etching process with improved profile control
US9502238B2 (en) 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
US20160293388A1 (en) 2015-04-03 2016-10-06 Tokyo Electron Limited Pneumatic counterbalance for electrode gap control
KR102452593B1 (ko) 2015-04-15 2022-10-11 삼성전자주식회사 반도체 장치의 제조 방법
US20160307772A1 (en) 2015-04-15 2016-10-20 Applied Materials, Inc. Spacer formation process with flat top profile
US10049862B2 (en) 2015-04-17 2018-08-14 Lam Research Corporation Chamber with vertical support stem for symmetric conductance and RF delivery
US9576815B2 (en) 2015-04-17 2017-02-21 Applied Materials, Inc. Gas-phase silicon nitride selective etch
US9576788B2 (en) 2015-04-24 2017-02-21 Applied Materials, Inc. Cleaning high aspect ratio vias
US9870899B2 (en) 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
US10253412B2 (en) 2015-05-22 2019-04-09 Lam Research Corporation Deposition apparatus including edge plenum showerhead assembly
JP6295439B2 (ja) 2015-06-02 2018-03-20 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及び方法、電子デバイスの製造方法
WO2016194211A1 (ja) 2015-06-04 2016-12-08 株式会社 東芝 半導体記憶装置及びその製造方法
US9449843B1 (en) 2015-06-09 2016-09-20 Applied Materials, Inc. Selectively etching metals and metal nitrides conformally
JP2017017277A (ja) 2015-07-06 2017-01-19 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
US9659791B2 (en) 2015-07-16 2017-05-23 Applied Materials, Inc. Metal removal with reduced surface roughness
US11473826B2 (en) 2015-07-27 2022-10-18 Mitegen, Llc Cryogenic cooling apparatus, methods, and applications
US9564341B1 (en) 2015-08-04 2017-02-07 Applied Materials, Inc. Gas-phase silicon oxide selective etch
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9706634B2 (en) * 2015-08-07 2017-07-11 Varian Semiconductor Equipment Associates, Inc Apparatus and techniques to treat substrates using directional plasma and reactive gas
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10950477B2 (en) 2015-08-07 2021-03-16 Applied Materials, Inc. Ceramic heater and esc with enhanced wafer edge performance
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US9620376B2 (en) 2015-08-19 2017-04-11 Lam Research Corporation Self limiting lateral atomic layer etch
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US9659788B2 (en) 2015-08-31 2017-05-23 American Air Liquide, Inc. Nitrogen-containing compounds for etching semiconductor structures
US10147736B2 (en) 2015-09-03 2018-12-04 Toshiba Memory Corporation Semiconductor memory device and method for manufacturing same
US9837286B2 (en) 2015-09-04 2017-12-05 Lam Research Corporation Systems and methods for selectively etching tungsten in a downstream reactor
US9564338B1 (en) 2015-09-08 2017-02-07 Applied Materials, Inc. Silicon-selective removal
US9412752B1 (en) 2015-09-22 2016-08-09 Macronix International Co., Ltd. Reference line and bit line structure for 3D memory
US9460959B1 (en) 2015-10-02 2016-10-04 Applied Materials, Inc. Methods for pre-cleaning conductive interconnect structures
US9853101B2 (en) 2015-10-07 2017-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Strained nanowire CMOS device and method of forming
US10378108B2 (en) 2015-10-08 2019-08-13 Applied Materials, Inc. Showerhead with reduced backside plasma ignition
US10192751B2 (en) 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
US20170133202A1 (en) 2015-11-09 2017-05-11 Lam Research Corporation Computer addressable plasma density modification for etch and deposition processes
JP2017098478A (ja) 2015-11-27 2017-06-01 東京エレクトロン株式会社 エッチング方法
US9583399B1 (en) 2015-11-30 2017-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10043636B2 (en) 2015-12-10 2018-08-07 Lam Research Corporation Apparatuses and methods for avoiding electrical breakdown from RF terminal to adjacent non-RF terminal
KR20180085807A (ko) 2015-12-18 2018-07-27 어플라이드 머티어리얼스, 인코포레이티드 세정 방법
US20170178899A1 (en) 2015-12-18 2017-06-22 Lam Research Corporation Directional deposition on patterned structures
US9831097B2 (en) 2015-12-18 2017-11-28 Applied Materials, Inc. Methods for selective etching of a silicon material using HF gas without nitrogen etchants
WO2017127233A1 (en) 2016-01-20 2017-07-27 Applied Materials, Inc. Hybrid carbon hardmask for lateral hardmask recess reduction
US10410873B2 (en) * 2016-01-20 2019-09-10 Tokyo Electron Limited Power modulation for etching high aspect ratio features
US10074730B2 (en) 2016-01-28 2018-09-11 International Business Machines Corporation Forming stacked nanowire semiconductor device
US10147588B2 (en) 2016-02-12 2018-12-04 Lam Research Corporation System and method for increasing electron density levels in a plasma of a substrate processing system
TWI677593B (zh) 2016-04-01 2019-11-21 美商應用材料股份有限公司 用於提供均勻流動的氣體的設備及方法
KR102649369B1 (ko) 2016-04-11 2024-03-21 삼성전자주식회사 반도체 소자 및 그 제조 방법
KR102158668B1 (ko) 2016-04-22 2020-09-22 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 한정 피쳐들을 갖는 기판 지지 페디스털
KR101773448B1 (ko) 2016-04-29 2017-09-01 세메스 주식회사 안테나 및 그를 이용하는 기판 처리 장치
US10269566B2 (en) 2016-04-29 2019-04-23 Lam Research Corporation Etching substrates using ale and selective deposition
US10622189B2 (en) 2016-05-11 2020-04-14 Lam Research Corporation Adjustable side gas plenum for edge rate control in a downstream reactor
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10577690B2 (en) 2016-05-20 2020-03-03 Applied Materials, Inc. Gas distribution showerhead for semiconductor processing
GB201609119D0 (en) 2016-05-24 2016-07-06 Spts Technologies Ltd A method of cleaning a plasma processing module
US10662527B2 (en) 2016-06-01 2020-05-26 Asm Ip Holding B.V. Manifolds for uniform vapor deposition
US9812462B1 (en) 2016-06-07 2017-11-07 Sandisk Technologies Llc Memory hole size variation in a 3D stacked memory
JP6792786B2 (ja) 2016-06-20 2020-12-02 東京エレクトロン株式会社 ガス混合装置および基板処理装置
US9978768B2 (en) 2016-06-29 2018-05-22 Sandisk Technologies Llc Method of making three-dimensional semiconductor memory device having laterally undulating memory films
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10522377B2 (en) 2016-07-01 2019-12-31 Lam Research Corporation System and method for substrate support feed-forward temperature control based on RF power
US20180025900A1 (en) 2016-07-22 2018-01-25 Applied Materials, Inc. Alkali metal and alkali earth metal reduction
WO2018039315A1 (en) 2016-08-26 2018-03-01 Applied Materials, Inc. Plasma screen for plasma processing chamber
US10083961B2 (en) 2016-09-07 2018-09-25 International Business Machines Corporation Gate cut with integrated etch stop layer
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10043667B2 (en) 2016-09-15 2018-08-07 Applied Materials, Inc. Integrated method for wafer outgassing reduction
JP2018046185A (ja) 2016-09-15 2018-03-22 東京エレクトロン株式会社 酸化シリコン及び窒化シリコンを互いに選択的にエッチングする方法
US20180080124A1 (en) 2016-09-19 2018-03-22 Applied Materials, Inc. Methods and systems for thermal ale and ald
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US9960068B1 (en) 2016-12-02 2018-05-01 Lam Research Corporation Moment cancelling pad raising mechanism in wafer positioning pedestal for semiconductor processing
WO2018077693A1 (en) 2016-10-28 2018-05-03 Philips Lighting Holding B.V. Monitoring lighting.
KR102633031B1 (ko) 2016-11-04 2024-02-05 에스케이하이닉스 주식회사 반도체 메모리 소자
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10032661B2 (en) 2016-11-18 2018-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, method, and tool of manufacture
US10164042B2 (en) 2016-11-29 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10141328B2 (en) 2016-12-15 2018-11-27 Macronix International Co., Ltd. Three dimensional memory device and method for fabricating the same
US10692880B2 (en) 2016-12-27 2020-06-23 Applied Materials, Inc. 3D NAND high aspect ratio structure etch
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10123065B2 (en) 2016-12-30 2018-11-06 Mora Global, Inc. Digital video file generation
US9960045B1 (en) 2017-02-02 2018-05-01 Applied Materials, Inc. Charge-trap layer separation and word-line isolation for enhanced 3-D NAND structure
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US9779956B1 (en) 2017-02-06 2017-10-03 Lam Research Corporation Hydrogen activated atomic layer etching
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10208383B2 (en) 2017-02-09 2019-02-19 The Regents Of The University Of Colorado, A Body Corporate Atomic layer etching processes using sequential, self-limiting thermal reactions comprising oxidation and fluorination
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US20180261686A1 (en) 2017-03-13 2018-09-13 Applied Materials, Inc. Transistor sidewall formation process
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11447868B2 (en) 2017-05-26 2022-09-20 Applied Materials, Inc. Method for controlling a plasma process
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US20190032211A1 (en) 2017-07-28 2019-01-31 Lam Research Corporation Monolithic ceramic gas distribution plate
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
TWI815813B (zh) 2017-08-04 2023-09-21 荷蘭商Ａｓｍ智慧財產控股公司 用於分配反應腔內氣體的噴頭總成
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US11049719B2 (en) 2017-08-30 2021-06-29 Applied Materials, Inc. Epitaxy system integrated with high selectivity oxide removal and high temperature contaminant removal
JP6883495B2 (ja) 2017-09-04 2021-06-09 東京エレクトロン株式会社 エッチング方法
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
CN118588548A (zh) 2018-03-16 2024-09-03 朗姆研究公司 在电介质中的高深宽比特征的等离子体蚀刻化学过程
KR102641752B1 (ko) 2018-11-21 2024-03-04 삼성전자주식회사 가스 주입 모듈, 기판 처리 장치, 및 그를 이용한 반도체 소자의 제조방법
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5830330A (en) * 1997-05-22 1998-11-03 Tokyo Electron Limited Method and apparatus for low pressure sputtering
US7479458B1 (en) * 2005-12-15 2009-01-20 Lam Research Corporation Methods and apparatus for the optimization of highly selective process gases
WO2011156813A1 (en) * 2010-06-11 2011-12-15 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma processing a substrate
CN103733317A (zh) * 2011-08-18 2014-04-16 应用材料公司 用于含硅和氮的薄膜的干式蚀刻
CN103021934A (zh) * 2012-12-20 2013-04-03 中微半导体设备(上海)有限公司 一种通孔或接触孔的形成方法
US8748322B1 (en) * 2013-04-16 2014-06-10 Applied Materials, Inc. Silicon oxide recess etch
JP2015207688A (ja) * 2014-04-22 2015-11-19 株式会社日立ハイテクノロジーズ ドライエッチング方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
射频辉光放电氩等离子体诊断分析;刘卫国等;《西安工业大学学报》;20110625;第31卷(第03期);205-209、278 *

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