JP5064747B2 - 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 - Google Patents

半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 Download PDF

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JP5064747B2
JP5064747B2 JP2006262991A JP2006262991A JP5064747B2 JP 5064747 B2 JP5064747 B2 JP 5064747B2 JP 2006262991 A JP2006262991 A JP 2006262991A JP 2006262991 A JP2006262991 A JP 2006262991A JP 5064747 B2 JP5064747 B2 JP 5064747B2
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film
gate electrode
oxide semiconductor
substrate
semiconductor film
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JP2007123861A5 (https=
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健吾 秋元
達也 本田
寛人 曽根
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Semiconductor Energy Laboratory Co Ltd
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  • Shift Register Type Memory (AREA)
JP2006262991A 2005-09-29 2006-09-27 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 Active JP5064747B2 (ja)

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JP2006262991A JP5064747B2 (ja) 2005-09-29 2006-09-27 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法

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JP2008200670A Division JP5020190B2 (ja) 2005-09-29 2008-08-04 半導体装置及びその作製方法
JP2009177524A Division JP5137912B2 (ja) 2005-09-29 2009-07-30 半導体装置の作製方法
JP2010129921A Division JP5116804B2 (ja) 2005-09-29 2010-06-07 半導体装置
JP2011008550A Division JP5031109B2 (ja) 2005-09-29 2011-01-19 半導体装置及びその作製方法
JP2012055690A Division JP5640032B2 (ja) 2005-09-29 2012-03-13 半導体装置、モジュール、及び電子機器
JP2012160330A Division JP5448280B2 (ja) 2005-09-29 2012-07-19 半導体装置
JP2012160408A Division JP5640045B2 (ja) 2005-09-29 2012-07-19 半導体装置、電気泳動表示装置、表示モジュール、及び電子機器
JP2012160290A Division JP5478676B2 (ja) 2005-09-29 2012-07-19 半導体装置の作製方法

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