JP5413845B2 - 液晶表示装置、液晶表示装置の製造方法及び液晶表示装置の製造装置 - Google Patents
液晶表示装置、液晶表示装置の製造方法及び液晶表示装置の製造装置 Download PDFInfo
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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Description
前記第1の基板は、ロール状のプラスチックフィルム基板であり、
前記第1の基板を第1の基板送り出し部から送り出して搬送し、第1の基板巻き取り部に巻き取るロール・ツー・ロール工程において、
前記第1の基板上に遮光層を形成する工程と、着色層を形成する工程と、共通電極を形成する工程と、前記第1の基板の少なくとも一方には、片面または両面にバリア膜を形成する工程を有し、
前記第2の基板は、予め能動素子が形成されたガラス基板が、プラスチックフィルム基板上に貼合された基板であり、
前記第2の基板を第2の基板送り出し部から送り出して搬送し、第2の基板巻き取り部に巻き取るロール・ツー・ロール工程において、
前記第2の基板のガラス基板上に能動素子を形成する工程と、前記ガラス基板をプラスチックフィルム基板上に貼合する工程と、前記第2の基板の少なくとも一方には、片面または両面にバリア膜を形成する工程を有し、
前記第1のロール・ツー・ロール工程と前記第2のロール・ツー・ロール工程において、
前記第1の基板と前記第2の基板の貼合面にそれぞれ配向膜を形成する工程と、
ODFプロセスによるシール剤描画工程と、液晶充填工程と、描画された前記シール剤を介した貼り合せ工程と、前記シール剤を硬化させる工程とを有することを特徴とする液晶表示装置の製造方法である。
(第1の実施の形態)
この第1の実施の形態の液晶表示装置を、図1及び図2に基づいて説明する。図1は液晶表示装置の概略構成図、図2は第2の基板のプラスチックフィルム基板の概略構成図である。
O=12〜18 (典型値17)
N=0〜24(典型値12)となる。
図3は第2の実施の形態の液晶表示装置の概略構成図である。この第2の実施の形態は、第1の実施の形態と同じ構成は同じ符号を付して説明を省略する。この第2の実施の形態では、ギャップ保持材15は、図3に示すように、球状スペーサ15bを用いている。この球状スペーサ15bは、一部が配向膜12に接して形成され、他部が配向膜13に接して形成されているが、一部の位置は第1の基板10a側の遮光層領域に形成され、他部の位置は第2の基板11b側の遮能動素子領域に形成されている。
図4は第3の実施の形態の液晶表示装置の概略構成図である。この第3の実施の形態は、第1の実施の形態と同じ構成は同じ符号を付して説明を省略する。この第3の実施の形態では、第1の基板10aと第2の基板11bは、貼合面と異なる面に偏光層20,21を有しており、液晶表示装置を通るバックライト光の透過制御を可能にしている。
図5は第4の実施の形態の液晶表示装置の概略構成図である。この第4の実施の形態は、第1の実施の形態と同じ構成は同じ符号を付して説明を省略する。この第4の実施の形態では、第2の基板11が、プラスチックフィルム基板11b上に能動素子17を直接形成された基板であり、能動素子17を直接形成することで、さらに軽量、薄型で、割れにくくなる。
図6は第5の実施の形態の液晶表示装置の概略構成図である。この第5の実施の形態は、第1の実施の形態と同じ構成は同じ符号を付して説明を省略する。この第5の実施の形態では、第1の基板10a側の遮光層22が、活性層17a上方に配置され、目視方向からの外光が液晶表示装置に入射する際、活性層17aへ入射光が当たらなくなるため、活性層17aの誤動作や特性変化が起きにくくなる。
この実施の形態の液晶表示装置の製造方法及び液晶表示装置の製造装置を、図7乃至図9に基づいて説明する。図7は第1の基板製造装置の概略構成図、図8は第2の基板製造装置の概略構成図、図9は第1の基板と第2の基板の貼合装置の概略構成図である。
10a プラスチックフィルム基板
10b 遮光層
10c 着色層
10d 共通電極層
10e,10f 無機バリア
10g 樹脂バリア 11 第2の基板
11b プラスチックフィルム基板
11c,11d 無機バリア
11e 粘着剤
11f 樹脂バリア
12,13 配向膜
14 液晶
15 ギャップ保持材
16 シール剤
17 能動素子
17a 活性層
22 遮光層
110 バリア膜形成部
103 遮光層形成部
104 着色層形成部
106 配向膜形成部
105 共通電極形成部
107 ギャップ保持材形成部
111 偏光層貼合部
210 バリア膜形成部
203 能動素子形成部
204 ガラス基板貼合部
205 遮光層形成部
206 配向膜形成部
211 偏光層貼合部
321 スパッタ装置
301 シール剤描画部
302 液晶充填部
303 貼合部
304 硬化部
Claims (10)
- 第1の基板と第2の基板間に、配向膜及び液晶を挟持させギャップ保持材及びシール剤を介して貼合する液晶表示装置の製造方法において、
前記第1の基板は、ロール状のプラスチックフィルム基板であり、
前記第1の基板を第1の基板送り出し部から送り出して搬送し、第1の基板巻き取り部に巻き取るロール・ツー・ロール工程において、
前記第1の基板上に遮光層を形成する工程と、着色層を形成する工程と、共通電極を形成する工程と、前記第1の基板の少なくとも一方には、片面または両面にバリア膜を形成する工程を有し、
前記第2の基板は、予め能動素子が形成されたガラス基板が、プラスチックフィルム基板上に貼合された基板であり、
前記第2の基板を第2の基板送り出し部から送り出して搬送し、第2の基板巻き取り部に巻き取るロール・ツー・ロール工程において、
前記第2の基板のガラス基板上に能動素子を形成する工程と、前記ガラス基板をプラスチックフィルム基板上に貼合する工程と、前記第2の基板の少なくとも一方には、片面または両面にバリア膜を形成する工程を有し、
前記第1のロール・ツー・ロール工程と前記第2のロール・ツー・ロール工程において、
前記第1の基板と前記第2の基板の貼合面にそれぞれ配向膜を形成する工程と、
ODFプロセスによるシール剤描画工程と、液晶充填工程と、描画された前記シール剤を介した貼り合せ工程と、前記シール剤を硬化させる工程とを有することを特徴とする液晶表示装置の製造方法。 - 前記ギャップ保持材として、前記第1の基板側の遮光層領域に配置される柱状スペーサであり、フォトリソグラフィー法により形成されることを特徴とする請求項1に記載の液晶表示装置の製造方法。
- 前記ギャップ保持材として、前記第1の基板と前記第2の基板間に配置され、かつ前記第1の基板側の遮光層領域に配置される球状スペーサであり、定点配置法により形成されることを特徴とする請求項1に記載の液晶表示装置の製造方法。
- 前記第1の基板と前記第2の基板との貼合面とは異なる面に、偏光層を貼合方式で形成することを特徴とする請求項1に記載の液晶表示装置の製造方法。
- 前記第1の基板と前記第2の基板との貼合面とは異なる面に、偏光層を塗布方式で形成することを特徴とする請求項1に記載の液晶表示装置の製造方法。
- 前記第2の基板が、プラスチックフィルム基板上に能動素子を直接形成する手法で製造されることを特徴とする請求項1に記載の液晶表示装置の製造方法。
- 前記第2の基板の能動素子が、酸素(O)と窒素(N)の混合物であり、Oに対するNの比(N数密度/O数密度)が0乃至2である非金属元素を含む活性層をスパッタ方式により形成することを特徴とする請求項1乃至請求項6のいずれか1項に記載の液晶表示装置の製造方法。
- 前記第1の基板側の遮光層が、前記活性層上方に配置されるように前記第1の基板と前記第2の基板を貼り合せることを特徴とする請求項7に記載の液晶表示装置の製造方法。
- 前記第1の基板側の遮光層が、前記活性層直上にフォトリソグラフィー法により形成されることを特徴とする請求項7に記載の液晶表示装置の製造方法。
- 請求項1乃至請求項9のいずれか1項に記載の表示装置の製造方法を実行し、液晶表示装置を製造することを特徴する液晶表示装置の製造装置。
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JP2010042420A JP5413845B2 (ja) | 2010-02-26 | 2010-02-26 | 液晶表示装置、液晶表示装置の製造方法及び液晶表示装置の製造装置 |
KR1020127025282A KR101465853B1 (ko) | 2010-02-26 | 2010-03-04 | 액정 표시 장치, 액정 표시 장치의 제조 방법 및 액정 표시 장치의 제조 장치 |
US13/580,865 US20130050623A1 (en) | 2010-02-26 | 2010-03-04 | Liquid crystal display, method of manufacturing liquid crystal display, and apparatus for manufacturing liquid crystal display |
PCT/JP2010/053516 WO2011104896A1 (ja) | 2010-02-26 | 2010-03-04 | 液晶表示装置、液晶表示装置の製造方法及び液晶表示装置の製造装置 |
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US20150192820A1 (en) * | 2014-01-06 | 2015-07-09 | Litemax Electronics Inc. | Lcd screen capable of preventing the phenomenon of blackening lcd panel |
CN107290893A (zh) * | 2017-07-19 | 2017-10-24 | 深圳市华星光电半导体显示技术有限公司 | 液晶显示面板 |
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JPH04238322A (ja) * | 1991-01-22 | 1992-08-26 | Ricoh Co Ltd | 液晶表示装置 |
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JP2004145101A (ja) * | 2002-10-25 | 2004-05-20 | Seiko Epson Corp | スペーサ定点配置装置、液晶装置の製造方法、液晶装置、電子機器 |
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JP4887625B2 (ja) * | 2004-12-28 | 2012-02-29 | 大日本印刷株式会社 | 液晶表示装置 |
JP5064747B2 (ja) * | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
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US8581247B2 (en) * | 2009-03-31 | 2013-11-12 | Panasonic Corporation | Flexible semiconductor device having gate electrode disposed within an opening of a resin film |
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