JP6076617B2 - 表示装置 - Google Patents
表示装置 Download PDFInfo
- Publication number
- JP6076617B2 JP6076617B2 JP2012107269A JP2012107269A JP6076617B2 JP 6076617 B2 JP6076617 B2 JP 6076617B2 JP 2012107269 A JP2012107269 A JP 2012107269A JP 2012107269 A JP2012107269 A JP 2012107269A JP 6076617 B2 JP6076617 B2 JP 6076617B2
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- Prior art keywords
- transistor
- film
- oxide semiconductor
- electrode
- semiconductor film
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- 239000004065 semiconductor Substances 0.000 claims description 197
- 239000011701 zinc Substances 0.000 claims description 66
- 229910052738 indium Inorganic materials 0.000 claims description 28
- 229910052725 zinc Inorganic materials 0.000 claims description 23
- 229910052718 tin Inorganic materials 0.000 claims description 22
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 14
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
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Description
本実施の形態では、表示装置及び表示装置の作製方法の一形態を、図1、図2、及び図7乃至9を用いて説明する。
インジウム、錫、亜鉛を含む酸化物半導体をチャネル形成領域とするトランジスタは、該酸化物半導体を形成する際に基板を加熱して成膜すること、或いは酸化物半導体層を形成した後に熱処理を行うことで良好な特性を得ることができる。なお、主成分とは組成比で5atomic%以上含まれる元素をいう。
本実施の形態では、表示装置の他の一形態を、図3及び図4を用いて説明する。本実施の形態で示すトランジスタとして、実施の形態1で示したトランジスタ410を適用することができる。
本実施の形態では、表示装置の他の一形態を、図5及び図10を用いて説明する。本実施の形態で示すトランジスタとして、実施の形態1で示したトランジスタ410を適用することができる。
本明細書に開示する表示装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ等のカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。上記実施の形態で説明した表示装置を具備する電子機器の例について説明する。
Claims (3)
- 同一面上の第1のゲート電極及び第2のゲート電極と、
前記第1のゲート電極及び前記第2のゲート電極を覆うゲート絶縁膜と、
前記ゲート絶縁膜上の酸化物半導体膜と、
前記酸化物半導体膜上のソース電極及びドレイン電極と、を有するトランジスタを有し、
前記酸化物半導体膜は、インジウムと、錫と、亜鉛とを有し、
前記酸化物半導体膜は、前記第1のゲート電極と重畳する第1領域と、前記第2のゲート電極と重畳する第2領域と、前記第1領域と前記第2領域との間において、前記第1のゲート電極と重畳せず且つ前記第2のゲート電極と重畳しない第3領域とを有し、
前記ソース電極は、前記ゲート絶縁膜及び前記酸化物半導体膜を介して、前記第1のゲート電極の一部と重畳し、
前記ドレイン電極は、前記ゲート絶縁膜及び前記酸化物半導体膜を介して、前記第2のゲート電極の一部と重畳し、
前記第3の領域上に接して絶縁膜を有することを特徴とする表示装置。 - 請求項1において、
前記第3領域のチャネル長方向における長さは、1μm以上20μm以下であることを特徴とする表示装置。 - 請求項1又は請求項2において、
画素及び駆動回路を有し、
前記トランジスタは、前記画素及び前記駆動回路に設けられることを特徴とする表示装置。
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