CN108962786A - 多区半导体基板支撑件 - Google Patents
多区半导体基板支撑件 Download PDFInfo
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- CN108962786A CN108962786A CN201810474404.2A CN201810474404A CN108962786A CN 108962786 A CN108962786 A CN 108962786A CN 201810474404 A CN201810474404 A CN 201810474404A CN 108962786 A CN108962786 A CN 108962786A
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- top disc
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
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Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H01J37/32715—Workpiece holder
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
Abstract
公开了多区半导体基板支撑件。示例性支撑组件可包括顶部圆盘和与顶部圆盘耦合的背托板。支撑组件可包括与背托板耦合的冷却板。支撑组件可包括耦合在冷却板和背托板之间的加热器。支撑组件还可包括围绕背托板的外部与背托板耦合的背板。背板可至少部分地限定一容积,并且加热器和冷却板可被容纳在该容积内。
Description
技术领域
本技术涉及用于半导体制造的部件和装置。更具体地,本技术涉及基板支撑组件和其他半导体处理设备。
背景技术
通过在基板表面上产生复杂图案化材料层的工艺而使集成电路成为可能。在基板上产生图案化材料需要用于形成和去除材料的受控的方法。这些工艺发生时所处的温度可直接影响最终产品。在处理期间,常常利用支撑基板的组件来控制和维持基板温度。可横跨支撑组件的表面或穿过支撑组件的深度而发生的温度波动可能创建横跨基板的温度区或区域。具有不同的温度的这些区域可能影响在基板上执行的或对基板执行的工艺,这往往可能降低沿着基板沉积的膜或蚀刻的结构的均匀性。取决于沿着基板的表面的变化的程度,器件失效可能因由应用产生的不一致性而发生。
另外,容纳在半导体处理腔室内的结构可受在腔室内执行的工艺影响。例如,在腔室内沉积的材料可沉积在腔室内的设备上和在基板本身上。材料还可沉积在支撑基座上,这可能引起基板对准的问题以及在正被处理的基板上再沉积的问题。
因此,需要改进的可用于生产高质量器件和结构的系统和方法。本技术解决了这些和其他需要。
发明内容
示例性支撑组件可包括顶部圆盘和与顶部圆盘耦合的背托板。支撑组件可包括与背托板耦合的冷却板。支撑组件可包括耦合在冷却板和背托板之间的加热器。支撑组件还可包括围绕背托板的外部与背托板耦合的背板。背板可至少部分地限定一容积,并且加热器和冷却板可被容纳在该容积内。
在一些实施例中,顶部圆盘可限定在顶部圆盘的内区和外区之间的热中断部。热中断部可以是或可以包括围绕顶部圆盘的内半径限定的沟槽。在实施例中,热中断部可包括围绕顶部圆盘的内半径在顶部圆盘的第一表面处限定的第一沟槽,以及围绕顶部圆盘的第二内半径在顶部圆盘的与该第一表面相对的第二表面处限定的第二沟槽。第一沟槽和第二沟槽中的至少一者可围绕顶部圆盘不连续地延伸。冷却板可限定在冷却板内的至少一个通道,该至少一个通道被配置成在冷却板中分配从中央端口输送的流体。
在实施例中,加热器可包括与背托板在第一位置处耦合的第一加热器,以及与背托板在从该第一位置径向向外的第二位置处耦合的第二加热器。冷却板和背托板可限定径向位于第一加热器和第二加热器之间的间隙。在一些实施例中,第二加热器可延伸到冷却板的顶表面的径向边缘。第一加热器和第二加热器可被配置成彼此独立地操作。第一加热器和第二加热器可被配置成维持+/-0.5℃的横跨在基板支撑组件上的基板的温度均匀性。顶部圆盘可以是或可以包括铝。加热器可以是或可以包括聚合物加热器。顶部圆盘可限定围绕顶部圆盘的外半径的至少一个凹入横档。基板支撑组件可包括边缘环,边缘环可沿着凹入横档围绕顶部圆盘延伸。边缘环可在顶部圆盘的顶部平面上方垂直地延伸。边缘环可由与顶部圆盘的外径相等的外径来表征。顶部圆盘可限定多个凹部,并且边缘环可被配置成安置在位于该多个凹部内的陶瓷销上。在一些实施例中,边缘环可安置在陶瓷销上而不接触顶部圆盘。
本技术还涵盖可包括顶部圆盘的基板支撑组件。该基板支撑组件可包括耦合到顶部圆盘的多个加热器。加热器可包括横跨顶部圆盘的后表面延伸的电阻加热器。基板支撑组件可包括冷却板,冷却板与多个加热器在冷却板的第一表面处耦合。冷却板可限定通道,该通道被配置成穿过冷却板来分配温度受控流体。基板支撑组件还可包括与冷却板的与第一表面相对的第二表面耦合的绝缘体。
在一些实施例中,顶部圆盘和绝缘体可包括陶瓷。多个加热器可包括至少四个印刷加热器,并且在实施例中,该四个印刷电阻加热器中的至少三个可以由环形形状来表征。顶部圆盘和冷却板可限定在顶部圆盘的外边缘下方延伸的通道,并且该通道可被配置成安置弹性体元件。在一些实施例中,基板支撑组件还可包括沿着凹入横档围绕冷却板的外部定位的边缘环。
这种技术可以提供优于传统系统和技术的许多益处。例如,特别的加热和冷却设备耦合可提供改进的加热和冷却性能,以改善晶片工艺均匀性。另外,各种净化通道可在制造操作期间改进残留颗粒的去除。结合以下描述和附图更详细地描述这些和其他实施例以及它们的许多优点和特征。
附图说明
参考说明书的剩余部分和附图可实现对公开的技术的本质与优点的进一步理解。
图1示出了根据本技术的实施例的示例性处理系统的俯视平面视图。
图2A示出了根据本技术的实施例的示例性处理腔室的示意性横截面视图。
图2B示出了根据本技术的实施例的示例性喷头的详细视图。
图3示出了根据本技术的实施例的示例性喷头的仰视平面视图。
图4示出了根据本技术的实施例的示例性基板支撑组件的示意性局部横截面视图。
图5示出了根据本技术的实施例的示例性基板支撑组件的示意性局部横截面视图。
图6示出了根据本技术的实施例的示例性背托板的俯视平面视图。
图7A示出了根据本技术的实施例的示例性基板支撑组件的示意性局部横截面视图。
图7B示出了根据本技术的实施例的示例性基板支撑组件的示意性局部横截面视图。
图7C示出了根据本技术的实施例的示例性基板支撑组件的示意性局部横截面视图。
图8示出了根据本技术的实施例的示例性基板支撑组件的示意性局部横截面视图。
图9示出了根据本技术的实施例的示例性基板支撑组件的示意性局部横截面视图。
包括几个图作为示意图。应理解,这些附图用于说明目的,并且除非特别声明按比例,否则不应被视为按比例。此外,作为示意图,提供这些附图是为了帮助理解,并且可以不是包括与实际表示相比的所有方面或信息,并且可以包括用于说明目的的放大的材料。
在附图中,类同的部件和/或特征可具有相同的附图标记。进一步地,相同类型的各种部件可通过在附图标记后跟随在类似部件之间进行区分的字母来加以区分。如果在说明书中仅使用第一附图标记,则该描述适用于具有相同第一附图标记的类似部件中的任何一个,而不管该字母如何。
具体实施方式
本技术包括改进的在半导体处理操作期间用于加热和冷却分布的基座设计。虽然常规基座可在操作期间控制基板的总体温度,但所描述的本技术允许对横跨基座的整个表面和外表的温度特性的改进的控制。该技术允许基座在有限温度范围中在多个独立的区中受控。如此,可以执行改进的操作,因为驻留在基座上的基板可以横跨整个表面维持更均匀的温度分布。下面将详细阐释这些以及其他益处。
虽然其余的公开内容将常规地识别利用所公开的技术的特定的蚀刻工艺,但是将容易理解,系统和方法同样适用于可能在所述腔室中发生的沉积和清洁工艺。因此,该技术不应被认为是如此限制为仅与蚀刻工艺一起使用。本公开将讨论可以与本技术一起使用以执行某些去除操作的一个可能的系统和腔室,然后描述根据本技术的实施例的对此系统的额外的改变和调整。
图1示出根据实施例的沉积、蚀刻、烘烤和固化腔室的处理系统100 的一个实施例的俯视平面视图。在附图中,一对前开式联合晶片盒(FOUP) 102供应多种大小的基板,这些基板是由机器人臂104接收并在放入到基板处理腔室108a-f中的一个中之前放入到低压保持区域106中,基板处理腔室 108a-f定位在串联区段109a-c中。第二机器人臂110可以用于将基板晶片从保持区域106传输到基板处理区域108a-f并传输回。每个基板处理腔室108a-f 可装配来执行许多基板处理操作,这些基板处理操作除了循环层沉积(CLD)、原子层沉积(ALD)、化学气相沉积(CVD)、物理气相沉积(PVD)、蚀刻、预先清洁、脱气、取向和其他基板工艺之外,还包括了本文中描述的干法蚀刻工艺。
基板处理腔室108a-f可以包括用于使电介质膜在基板晶片上沉积、退火、固化和/或蚀刻的一个或多个系统部件。在一个配置中,两对处理腔室(例如,108c-d和108e-f)可用于将电介质膜沉积在基板上,并且第三对处理腔室 (例如,108a-b)可用于使沉积的电介质退火/固化。在另一配置中,所有三对腔室(例如,108a-f)可以配置为蚀刻基板上的电介质膜。所述工艺中的任一种或多种可以在与不同的实施例中示出的制造系统分开的腔室中进行。将了解,系统100还设想了用于电介质膜的沉积腔室、蚀刻腔室、烘烤腔室和固化腔室的另外配置。
图2A示出了处理腔室内具有分隔的等离子体产生区域的示例性处理腔室系统200的横截面视图。在膜蚀刻期间,例如氮化钛、氮化钽、钨、硅、多晶硅、氧化硅、氮化硅、氮氧化硅、碳氧化硅等工艺气体可通过气体入口组件205流入第一等离子体区域215中。远程等离子体系统(RPS)201可视情况包括在系统中,并且可以处理第一气体,随后,所述第一气体行进通过气体入口组件205。入口组件205可包括两个或更多个不同的气体供应通道,其中第二通道(未示出)可绕过RPS 201(如果包括的话)。
示出冷却板203、面板217、离子抑制器223、喷头225和具有基板 265设置在其上的基板支撑件255,并且它们各自可根据实施例而包括。基座 265可以具有热交换通道,热交换流体流过该热交换通道以控制基板的温度,该基座可以在处理操作期间被操作以加热和/或冷却基板或晶片。可包括铝、陶瓷或它们的组合的基座265的晶片支撑盘也可以使用嵌入式电阻加热器元件被电阻加热来实现相对高的温度,诸如从高达或为约100℃至高于或为约1100℃。
面板217可以是角锥形、圆锥形或其他类似的结构,其中窄顶部扩展到宽底部。图所示,面板217可另外地是平坦的,并且包括用于分配工艺气体的多个通道。如图所示,面板217可另外地是平坦的,并且包括用于分配工艺气体的多个通道。取决于RPS 201的使用,等离子体产生气体和/或等离子体激发物质可穿过面板217中的多个孔,如图2B所示,以更均匀地递送到第一等离子体区域215中。
示例性配置可以包括使气体入口组件205通向由面板217与第一等离子体区域215分隔开的气体供应区域258,使得气体/物质通过在面板217中的孔流入第一室等离子体区域215。结构和操作特征可被选择以防止等离子体从第一等离子体区域215大量地回流到供应区域258、气体入口组件205和流体供应系统210中。面板217(或腔室的导电顶部)和喷头225被示出为具有定位在特征之间的绝缘环220,这允许了AC电势相对于喷头225和/或离子抑制器223施加至面板217。可将绝缘环220定位在面板217与喷头225和/或离子抑制器223之间,从而使得电容耦合等离子体(CCP)能够形成在第一等离子体区域中。挡板(未示出)可附加地位于第一等离子体区域215中,或以其他方式与气体入口组件205耦合,以影响流体通过气体入口组件205进入该区域的流动。
离子抑制器223可以包括板或其他几何结构,板或其他几何结构在整个结构上限定了多个孔,这些孔配置为抑制离子带电物质迁移出第一等离子体区域215,同时允许不带电荷的中性或自由基物质穿过离子抑制器223进入抑制器与喷头之间的活化气体递送区域。在实施例中,离子抑制器223可以包括具有多种孔配置的多孔板。这些不带电荷的物质可能包括高反应性的物质,这些物质通过孔与较低反应性的载气一起运输。如上所述,离子物质通过孔的迁移可能被减少,并且在某些情况下可能被完全地抑制。控制穿过离子抑制器 223的离子物质的量可有利地提供对与下面的晶片基板接触的气体混合物的增加的控制,这进而可增加对气体混合物的沉积和/或蚀刻特性的控制。例如,气体混合物的离子浓度的调整可显著地改变其蚀刻选择性,例如,SiNx:SiOx蚀刻比率、Si:SiOx蚀刻比率等。在执行沉积的替代实施例中,这也可以使电介质材料的共形到可流动型沉积的平衡偏移。
在离子抑制器223中的多个孔可配置为控制活化气体(即,离子型、自由基和/或中性物质)通过离子抑制器223。例如,孔深宽比、或者说是孔直径与长度的比和/或孔的几何形状可控制成使得通过离子抑制器223的活化气体中的带离子电荷的物质的流量减少。在离子抑制器223中的孔可以包括面对等离子体激发区域215的锥形部分和面对喷头225的圆柱形部分。可设定圆柱形部分的形状和尺寸以控制通向喷头225的离子物质的流量。还可将可调整电偏置施加至离子抑制器223作为控制通过抑制器的离子物质的流量的另外手段。
离子抑制器223可以用来减少或消除从等离子体生成区域行进到基板的带离子电荷的物质的量。不带电荷的中性和自由基物质仍可穿过在离子抑制器中的开口来与基板反应。应注意,在实施例中可不执行对在基板周围的反应区域中的离子带电物质的完全消除。在某些情况下,离子物质旨在到达基板以执行蚀刻和/或沉积工艺。在这些情况下,离子抑制器可有助于控制反应区域中的离子物质的浓度处在有助于工艺的水平。
与离子抑制器223结合的喷头225可允许存在于第一等离子体区域 215中的等离子体避免直接激发基板处理区域233中的气体,同时仍允许激发物质从腔室等离子体区域215行进到基板处理区域233中。以这种方式,腔室可以配置为防止等离子体接触正在被蚀刻的基板255。这可以有利地保护在基板上图案化的各种复杂的结构和膜,如果与产生的等离子体直接接触,这些结构和膜可能会被损坏、错位或翘曲。另外,当允许等离子体接触基板或接近基板水平时,氧化物物质蚀刻的速率可能提高。因此,如果暴露的材料区域是氧化物,那么可通过维持等离子体远离基板进一步保护此材料。
处理系统可进一步包括与处理腔室电耦合的电源240,以向面板 217、离子抑制器223、喷头225和/或基座265提供电力来在第一等离子体区域215或处理区域233中产生等离子体。电源可以配置为根据执行的工艺来向腔室递送可调量的电力。这种配置可允许可调谐的等离子体用于正在执行的工艺中。与通常具有开或关功能的远程等离子体单元不同,可调谐的等离子体可以配置为向等离子体区域215递送特定量的电力。这进而可以允许形成特定等离子体特性,使得前驱物可以特定方式离解离来增强由这些前驱物产生的蚀刻分布。
等离子体可以在喷头225上方的腔室等离子体区域215或喷头225 下方的基板处理区域233中点燃。等离子体可存在于腔室等离子体区域215中以通过例如含氟前驱物或其他前驱物的流入而产生自由基前驱物。典型地在射频(RF)范围内的AC电压可以施加在处理腔室的导电顶部(例如面板217) 与喷头225和/或离子抑制器223之间以在沉积期间点燃腔室等离子体区域215 中的等离子体。RF电源可以产生13.56MHz的高RF频率,但也可以单独或与 13.56MHz频率组合地产生其他频率。
图2B示出了影响通过面板217的处理气体分配的特征的详细视图 253。如图2A和2B所示,面板217、冷却板203和气体入口组件205相交以限定气体供应区域258,工艺气体可从气体入口205递送到气体供应区域258 中。气体可填充气体供应区域258并通过面板217中的孔259流动到第一等离子体区域215中。孔259可以配置为以基本上单向的方式引导流动,使得工艺气体可流入处理区域233中,但可部分或完全地防止在越过面板217之后回流到气体供应区域258中。
用于处理腔室区段200中的气体分配组件(诸如喷头225)可以称为双通道喷头(DCSH),并另外详细示出在图3中所述的实施例中。双通道喷头可以提供用于蚀刻工艺,从而允许在处理区域233外的蚀刻剂在递送到处理区域中前分离,以便提供与腔室部件以及彼此的受限相互作用。
喷头225可以包括上板214和下板216。可将板彼此耦合以在板之间限定容积218。板的耦合可如此来提供穿过上板和下板的第一流体通道219、以及穿过下板216的第二流体通道221。所形成的通道可配置成仅经由第二流体通道221来提供从容积218穿过下板216的流体进出,并且第一流体通道219 可与在板与第二流体通道221之间的容积218流体隔离。容积218可为可供流体穿过气体分配组件225一侧来进出的。
图3是根据实施例的与处理腔室一起使用的喷头325的仰视图。喷头325可与图2A中的喷头225对应。示出第一流体通道219的视图的穿孔365 可以具有多个形状和配置,以便控制和影响穿过喷头225的前驱物流动。示出第二流体通道221的视图的小孔375可基本上均匀地分配在喷头的表面上方,甚至是在穿孔365之间,并可有助于在前驱物离开喷头时,使前驱物比其他配置更均匀的混合。
图4示出了根据本技术的实施例的示例性基板支撑组件400的示意性局部横截面视图。基板支撑组件400可与先前讨论的基板支撑件或基座265 类似,且可包括上面利用这个结构所讨论的一些或全部特征。如图所示,基板支撑组件400包括顶部圆盘405、背托板415、加热器425、冷却板435和背板 445。背托板415可与顶部圆盘405耦合。冷却板435可与背托板415直接或间接地耦合,而加热器425可被耦合在冷却板435和背托板415之间。背板445 可以沿背托板415的周边或外侧部分417与背托板415耦合。背板445可以限定在背板445的顶表面446中的横档(ledge)447,横档447向下延伸至背板 445的限定在顶表面446中的内部区域449。背板445的内部区域449可以从背板445的中心轴线径向延伸并且可以从下方限定容积450。背板445还可以限定容积450的侧面,其中背板445的升高部分451垂直于横档447而延伸。
背板445和背托板415可以通过类似或等同的外直径来表征,使得所耦合的部件限定支撑组件400的基本垂直的侧壁。背托板415可以从上方至少部分地限定容积450,使得体积450是在基板支撑组件400内的限定容积。在实施例中,加热器425和冷却板435可容纳在容积450内。背板445的升高部分451还可以包括被限定在背板445的顶表面446中的沟槽452。沟槽452 可以被配置成安置O形环或弹性体元件以提供背板445与背托板415之间的密封。
顶部圆盘405可以限定顶部圆盘405内的一个或多个热中断部408、 410,顶部圆盘405可以与背托板415一起至少部分地限定一个或多个通道,这将在下面更详细地描述。在实施例中,顶部圆盘405可限定顶部圆盘405内的任何数量的热中断部,并且可包括至少或约2、至少或约3、至少或约4、至少或约5、至少或约6、至少或约7、至少或约8、至少或约9、至少或约10 或更多。在一些实施例中,诸如基板支撑组件400中所示,顶部圆盘405可以限定一个或两个热中断部。第一热中断部408可以被限定在顶部圆盘405的顶表面406内,并且可以由穿过顶部圆盘405的深度来表征。
在实施例中,第一热中断部408可以围绕顶部圆盘405而径向限定,并且可以构造成至少部分地将顶部圆盘405分成内区412和外区414。第一热中断部408可以是或包括沿着顶部圆盘的内半径围绕顶部圆盘405限定的沟槽。在实施例中,第一热中断部408的深度可以大于顶部圆盘405的厚度的一半,并且可以大于或为顶部圆盘405的厚度的大约60%、大于或为顶部圆盘 405的厚度的大约70%、大于或为顶部圆盘405的厚度的大约80%、大于或为顶部圆盘405的厚度的大约90%、或者等于或为顶部圆盘405的厚度的大约 100%。在沟槽与顶部圆盘405完全相交的情况下,内区412和外区414可以是与背托板415单独耦合的两个分离部件。在实施例中,第一热中断部408可以被配置成热隔离内区412和外区414。这种隔离可以允许内区412和外区414 在操作期间被分开加热或冷却。
热中断部可以包括多个中断部,包括第二热中断部410,第二热中断部410可以被限定在顶部圆盘405的底表面407中或与第一表面或顶表面 406相对的表面中。第二热中断部410可以被限定在顶部圆盘405的第二内半径处,该第二内半径可以相对于第一热中断部408径向向内或径向向外。第二热中断部410可以由穿过顶部圆盘405的第二深度来表征,该第二深度可以大于、等于、或小于第一热中断部408的第一深度。例如,如图所示,第二热中断部410可以由小于第一热中断部408的深度的深度来表征。第一热中断部408 和第二热中断部410中的任一者或两者可以围绕顶部圆盘405连续地或不连续地延伸。例如,第一热中断部408可以围绕顶部圆盘405基本上连续地延伸,除了可以在横跨第一热中断部408的底部区域处具有一个或多个连接部,诸如最小厚度的延伸部,以将顶部圆盘405的内区412耦合到外区414,这可以允许顶部圆盘405的一体式设计。然而,第二热中断部410可以具有围绕沟槽的半径的数个部分,其中沟槽未被形成为穿过顶部圆盘405。这种布置将在下面进一步详细描述。
多个热中断部的益处在于,自顶表面限定的热中断部和自底表面限定的热中断部可以有助于减小两个区之间的串扰,这可以允许在区之间进行甚至更微调的温度调节。顶部圆盘405可以由任何数量的材料构成,并且在实施例中可以是或包括铝材料。顶部圆盘405可以是任何类型的铝,包括涂覆或电镀的铝。例如,在实施例中,顶部圆盘405可以是镀镍或镀钛的铝,这可以保护顶部圆盘405免受蚀刻。
在实施例中,加热器425可以包括电阻加热器或流体加热器。加热器425可以包括聚合物加热器,加热器与冷却板435的顶表面436接合或耦合并且还与背托板415接合或耦合。加热器425在实施例中可以包括多个加热器,并且可以包括第一加热器426和第二加热器427。第一加热器426可以在第一位置处与背托板415耦合,而第二加热器427可以在第二位置处与背托板415 耦合。第一加热器426可以定位在冷却板435的内部区域,并且可以定位在内区412内或与内区412成一直列。第二加热器427可以定位在冷却板435的外部区域,并且可以定位在外区414内或与外区414成一直列。在实施例中,第二加热器427可定位在第一热中断部408的径向外侧。间隙437可以由背托板 415从上方限定并且可以由冷却板435从下方限定。间隙437可以位于第一加热器426和第二加热器427之间,并且可以是径向地位于两个加热器之间的环形间隙。在一些实施例中,第二加热器427可以延伸接近冷却板435的顶表面 436的径向边缘,并且第二加热器427可以延伸至冷却板435的顶表面436的径向边缘。
第一加热器426和第二加热器427可以彼此独立地操作,并且可以能够调节横跨顶部圆盘405以及驻留在顶部圆盘405上的基板的温度。每个加热器可以具有操作温度的范围,该范围延伸至高于或为约25℃,并且每个加热器可以被配置成加热至高于或为约50℃、高于或为约60℃、高于或为约70℃、高于或为约80℃、高于或为约90℃、高于或为约100℃、高于或为约125℃、高于或为约150℃、高于或为约175℃、高于或为约200℃、高于或为约250℃、高于或为约300℃、高于或为约350℃、高于或为约400℃、高于或为约500℃、高于或为约600℃、高于或为约700℃、或更高。加热器也可以被配置成在包含在这些所阐明的数字中的任意两个之间的任何范围中或者在包含在这些范围中的任何一个范围内的较小范围中操作。
第一加热器426和第二加热器427也可以被配置成在彼此的温度范围内操作,并且被配置成维持横跨顶部圆盘405的表面或驻留在顶部圆盘405 上的基板的表面的特定温度。例如,第一加热器426可被配置成操作来将内区 412维持在第一温度,并且第二加热器427可被配置成操作来将外区414维持在与第一温度相似或不同的第二温度。加热器或区的每个温度可以是上面阐明的或所包括的任何温度,这可以允许两个加热器以几十或几百度的差进行操作。另外,在实施例中,两个加热器的操作温度之间或内区412和外区414的所维持温度之间的差可以小于10℃。两个加热器之间的温度差或由两个区所维持的温度差也可以小于或为约5℃、小于或为约4℃、小于或为约3℃、小于或为约2℃、小于或为约1℃、小于或为约0.9℃、小于或为约0.8℃、小于或为约0.7℃、小于或为约0.6℃、小于或为约0.5℃、小于或为约0.4℃、小于或为约0.3℃、小于或为约0.2℃、小于或为约0.1℃、或更小。通过允许两个区之间的这种微小的温度差,可在操作期间控制由于前体横跨基板流动而发生的温度波动、来自其他腔室部件的干扰、基于制造步骤而发生在一个区中但不发生在另一个区中的反应或操作、以及其他波动源。与传统技术相比,这可以允许改善横跨区和横跨正被处理的基板的均匀性。
冷却板435可以限定在冷却板435内的一个或多个通道438。通道 438可以被配置成围绕冷却板435分配一种或多种温度受控流体。通道438可以从在冷却板435的中央或内部区域的中央端口439接入,中央端口439可从基板支撑组件的杆接入。冷却流体可以沿杆向上输送并进入中央端口439,中央端口439然后可以允许流体围绕通道438流动。通道438可呈任何数量的几何图案,诸如螺旋或线圈,以及围绕冷却板435的基本同心的圆。该图案可以在返回到亦可位于冷却板的中央区域处的出口端口之前延伸到冷却板435的外部,并且可以提供对在基座的杆内的附加通道或耦合件的接入以允许流体返回热交换器或用于冷却和再循环的其他装置。如图所示,冷却板435可以不完全延伸到背板445的升高部分451,并且可以维持冷却板435的径向边缘与背板 445的升高部分451之间的容积450的间隙。这种间隙可以限制或防止从冷却板435和加热器425到背板445的热连通,该热连通可以传导到顶部圆盘405。
顶部圆盘405可以限定围绕顶部圆盘405的外半径的一个或多个凹入横档404。凹入横档404可以朝向顶部圆盘405的边缘延伸或逐级下降,凹入横档可由与背托板415和/或背板445的外径类似或相等的外径来表征。图4 中示出两个凹入横档404,但顶部圆盘405可以限定任何数量的凹入横档404。凹入横档404和顶部圆盘405的数个方面在图5中进一步示出,图5示出了根据本技术的实施例的示例性基板支撑组件400的另一个示意性局部横截面视图。
如图5所示,基板支撑组件400可以包括顶部圆盘405,顶部圆盘 405可以由多个凹槽505来表征,凹槽505可以围绕顶部圆盘405而形成或限定。凹槽505可以提供用于形成真空夹盘的路径以使基板驻留在顶部圆盘405 上,真空夹盘可在操作期间限制基板移动。如前所述,顶部圆盘405还可以限定一个或多个凹入横档404。如图所示,第一凹入横档404a和第二凹入横档 404b被限定在顶部圆盘405中,并且第二凹入横档404b可以延伸到顶部圆盘405的外边缘。顶部圆盘405可以限定在顶部圆盘405内的一个或多个凹部510。凹部510可以是圆柱形凹部、矩形凹部、或任何其他几何形状,延伸到穿过顶部圆盘405的深度。在实施例中,凹部510可以围绕顶部圆盘405的边缘区域分布,并且可以包括一个凹部、两个凹部、三个凹部、四个凹部、五个凹部、六个凹部、七个凹部、八个凹部、九个凹部、十个凹部、或更多。
凹部510可以为销515提供位置,销515可以定位在顶部圆盘405 的凹部510内。凹部510可被限定在围绕顶部圆盘405外部区域的任何位置处,并且在实施例中,凹部510被限定在凹入横档404内,凹入横档404限定在顶部圆盘405中。如图所示,凹部510可被限定在位于顶部圆盘405的顶表面406 下方且在第二凹入横档404b上方的第一凹入横档404a中,第二凹入横档404b 位于第一凹入横档404a下方。凹部510在凹入横档404a中可被限定在围绕顶部圆盘405的多个位置中,并且在实施例中,凹入横档404a可以限定在约2 和约10个之间的凹部510、在约2和约5个之间的凹部510、或者在约2和约 4个之间的凹部510。在一些实施例中,凹入横档404a可以限定围绕顶部圆盘 405等距分布的三个凹部510。销515可以是或者可以包括陶瓷销,具有坐落在凹部510内的第一部分516和在凹部510上方延伸的第二部分517。销515 的第二部分517可以限定一表面,边缘环520被安置在该表面上。
边缘环520可以被安置在位于顶部圆盘405内的凹部510中的多个销515上。边缘环520可以是与顶部圆盘405相似的材料或不同的材料,并且在实施例中,边缘环520可以包括镀镍的铝或其他经镀覆的铝,其可以例如在利用含卤素前体的蚀刻操作期间限制边缘环520的腐蚀。在实施例中,边缘环 520可以沿着凹入横档404围绕顶部圆盘延伸,并且可以在顶部圆盘405的垂直上方延伸,以便在顶部圆盘405的顶部平面上方垂直地延伸。边缘环520可以由内边缘522来表征,内边缘522在实施例中可以是斜角的或倒角的,朝向顶部圆盘405延伸。边缘环520还可以由与顶部圆盘405的外径相等或类似的外径来表征,使得在一些实施例中,边缘环520不延伸超过顶部圆盘405的外半径。边缘环520可以被安置在销515上,并且可以在顶部圆盘405上方浮置。在一些实施例中,边缘环520可以不接触顶部圆盘405,这可以允许顶部圆盘 405的每个表面(包括凹入横档404)和边缘环520之间的连续间隔。净化气体可以流过穿过顶部圆盘405且延伸穿过凹入横档404的孔,这可以允许从边缘环520周围连续净化。在一些实施例中,边缘环520可允许来自腔室的外部边缘的前体流的量被阻挡以防止或限制对基板的边缘区域的附加蚀刻、沉积或处理。
图6示出了根据本技术的实施例的示例性背托板600的俯视平面视图。背托板600可以被配置成与基板支撑组件的顶部圆盘一起至少部分地限定流动通道,并且提供通路用于通过基座和顶部圆盘输送净化气体以限制或防止基板支撑组件上的沉积、蚀刻或颗粒积聚。背托板600可以由基本环形的形状来表征,并且可以限定穿过背托板600的多个孔。孔605可以与穿过顶部圆盘的孔对齐以提供将真空夹盘施加穿过背托板600和相关联的顶部圆盘(诸如先前描述的顶部圆盘405)的直接路径。孔610和孔615可以提供通向限定在背托板600和与背托板耦合的顶部圆盘之间的通道的接入,这可以将净化气体引导到顶部圆盘的附加区域。
孔610可以提供对由背托板600的顶表面602限定的第一凹部612 的接入。背托板600可以限定围绕背托板600径向分布的一个或多个孔610,并且如图所示,示出了四个孔连同相应的第一凹部612,但取决于特定基板支撑组件的几何形状、尺寸和间隔,示例性背托板600在实施例中可包括更多或更少的孔610和第一凹部612。第一凹部612可以被限定为跨背托板600的外部部分,并且可以自孔610沿两个相反方向径向或横向地限定。第一凹部612的各个臂可以在弯曲或偏离背托板600的外边缘之前横向地延伸。沿着第一凹部612的每个臂可以是穿过与背托板相关联的顶部圆盘的接入孔,可以提供用于净化气体的流动路径。
孔615可以提供对由背托板600的顶表面602限定的第二凹部616 的接入。背托板600可以限定围绕背托板600径向分布的一个或多个孔615,并且如图所示,示出了四个孔连同相应的第二凹部616,但取决于特定基板支撑组件的几何形状、尺寸和间隔,示例性背托板600在实施例中可包括更多或更少的孔615和第二凹部616。提供对第二凹部616的接入的孔615可以围绕背托板600以与提供对第一凹部612的接入的孔610交替的方式形成,如在一些实施例中所示。在实施例中,第二凹部616可以朝向背托板600的中央区域径向向内限定,并且可以限定扩展到两个路径618的递归图案,然后可以延伸到四个路径620。沿着第二凹部616的每个臂可以是穿过与背托板相关联的顶部圆盘的接入孔,可以提供用于净化气体的流动路径。以这种方式,如图所示的第一凹部612的组合可以提供对穿过相关联的顶部圆盘而限定的总共八个孔的接入,并且第二凹部616的组合可以提供对穿过相关联的顶部圆盘且相对于从第一凹部612接入的八个孔径向向内而限定的16个孔的接入。这样的设计可以提供充足的净化气流穿过顶部圆盘,这可以限制或防止在顶部圆盘的表面上的或在驻留在顶部圆盘上的基板周围的颗粒积聚。在其他实施例中,可以围绕并穿过背托板和相关联的顶部圆盘形成任何附加数量的孔。
背托板600还可限定围绕背托板600的半径延伸的第三凹部625,第三凹部625可与诸如上述的第一热中断部408之类的热中断部对齐。背托板 600还可以限定第四凹部630,不同于可以限定在顶表面602内的所讨论的任何其他凹部,第四凹部630可以完全穿透背托板600。第四凹部630可以与诸如上述的第二热中断部410之类的热中断部对齐。由于第二热中断部410向上延伸穿过顶部圆盘405的底部,因此通过利用第四凹部630提供穿过背托板600 的完整凹进,可以提供更一致且更显著的热中断部。第三凹部625和第四凹部 630中的一者或两者也可以与加热器之间的诸如上述的间隙437之类的间隙对齐。这可以在基板支撑组件的内区和外区之间提供额外的热中断部。
转向图7A,图7A示出了根据本技术的实施例的示例性基板支撑组件的示意性局部横截面视图。该横截面可以是如图6所示的直通线A,例如,可以提供背托板600的孔610以及第一凹部612的图示。该基板支撑组件可以与先前描述的基板支撑组件400类似或是替代视图,并且可以包括顶部圆盘 405、边缘环520、背托板415和背板445。如图所示,背板445可以限定一个或多个通道705,用于将净化气体从基板支撑组件的中央区域(诸如杆)向外输送到基板支撑组件的外部。通道705可以径向向外延伸穿过背板445,然后在垂直方向上朝向背托板415而转向。孔610可以提供对第一凹部612的接入,第一凹部612可以产生由顶部圆盘405从上方限定的通道。在此通道内,沿着顶部圆盘405可以限定一个或多个孔,该一个或多个孔向上穿过顶部圆盘405,进入顶部圆盘405的边缘区域,诸如在边缘环520下方。
图7B示出了根据本技术的实施例的示例性基板支撑组件的示意性局部横截面视图。该横截面可以是如图6所示的直通线B,例如,可以提供背托板600的孔615以及第二凹部616的图示。如图所示,背板445可以限定一个或多个额外通道705,用于将净化气体从基板支撑组件的中央区域(诸如杆) 向外输送到基板支撑组件的外部。通道705可以径向向外延伸穿过背板445,然后在垂直方向上朝向背托板415转向。孔615可以提供对第二凹部616的接入,第二凹部616可以产生由顶部圆盘405从上方限定的通道。在此通道内,沿着顶部圆盘405可以限定一个或多个孔,该一个或多个孔向上穿过顶部圆盘 405,进入顶部圆盘405的穿过凹部616的递归路径的一个或多个内部区域。孔可以在(诸如沿着凹部616的径向部分的以及沿着递归部分618和620的) 多个位置中被限定穿过顶部圆盘405。例如,示例性孔715、716在图7C中示出,图7C沿着替代线或横截面示出了根据本技术的实施例的示例性基板支撑组件的示意性局部横截面视图。如图所示,孔715可以沿着凹部616定位,而孔716可以位于递归区域618内。应当理解,所讨论的示例性孔图案仅用于说明,并且由本技术实现的各种孔图案(包括背托板构造)也同样包含在内。
图8示出了根据本技术的实施例的示例性基板支撑组件800的示意性局部横截面视图。基板支撑组件800可以类似于先前讨论的基板支撑件400 或基座265,并且可以包括上面利用这些结构所讨论的一些或全部特征。基板支撑组件800可以包括顶部圆盘805。与顶部圆盘805耦合的可以是多个加热器815。加热器815可以是电阻加热器或温度受控流体流过的流体通道。在诸如所示的那些实施例中,加热器815可以是横跨顶部圆盘805的后表面延伸的电阻加热器。冷却板820可以在冷却板的顶表面822处与多个加热器815耦合。冷却板820还可以限定一个或多个通道825,通道825被配置成穿过冷却板来分配温度受控流体。
绝缘体830可以与冷却板820的与顶表面822相对的第二表面824 耦合。绝缘体830在实施例中可以是或可以包括陶瓷,并且顶部圆盘805在实施例中也可以是或包括陶瓷。在实施例中,冷却板820和背板835可以是或可以包括铝,包括如先前所述的经处理或涂覆的铝。背板835可以耦合在绝缘体 830下面。背板835、绝缘体830和冷却板820可以彼此耦合,并且在实施例中可以直接耦合在一起。耦合件可以各自限定穿过该结构的至少一个通道840 的至少一部分,通道840可以为升降销842提供接入。升降销842可以被配置成升高穿过通道840并且穿过顶部圆盘805以提升和降低基板。冷却板820可限定从顶表面822延伸到冷却板820的径向边缘的凹入横档827。凹入横档827 可延伸经过顶部圆盘805的径向边缘。
边缘环845可以围绕冷却板820的外部定位在凹入横档827上。边缘环845可以包括顶表面846,顶表面846从被安置在凹入横档827上的边缘环845的主体延伸。顶表面846可以限定在顶部圆盘805的外半径上径向或水平地延伸的唇部847,并且可以由朝向顶部圆盘805延伸的斜角或倒角边缘来表征。在实施例中,唇部847可以不接触顶部圆盘805,并且可以在部件之间提供空间,该空间配置成允许净化气体在唇部847和顶部圆盘805之间通过。边缘环845还可以包括侧壁848,侧壁848从被安置在凹入横档827上的边缘环845的主体延伸。侧壁848可以限定延伸部849,延伸部849围绕绝缘体830 和背板835垂直延伸。延伸部849可以不接触绝缘体830或背板835,并且可以在部件之间提供空间,该空间配置成允许净化气体在延伸部849以及绝缘体 830和背板835之间通过。在实施例中,延伸部849可以延伸至背板835的基底厚度,并且可以稍微延伸超过或低于背板835以限制或防止在堆叠的部件上的颗粒积聚。
在各种配置中,加热器815可以包括横跨顶部圆盘805的背部的多个加热器。例如,加热器815可以包括多个聚合物或印刷加热器,沿顶部圆盘 805径向向外延伸以横跨顶部圆盘805产生多个径向区。例如,圆形图案的中央加热器可以被安置或印刷在顶部圆盘805下方的中央位置处。具有环形形状的附加加热器可以围绕中央加热器安置,并且可以包括向外延伸的任何数量的加热器,包括大于或为约2个加热器、大于或为约3个加热器、大于或为约4 个加热器、大于或为约5个加热器、大于或为约6个加热器、大于或为约7个加热器、或更多。加热器可以包括可调电阻,这可以允许加热器被独立控制并且在不同温度下操作。每个加热器可以在先前描述的任何温度下操作,并且如前所述,加热器可以维持在温度差。
转向图9,图9示出了根据本技术的实施例的示例性基板支撑组件 800的另外的示意性局部横截面视图。图9示出移除了边缘环845的横截面视图。如图所示,可以看到顶部圆盘805包括凹入横档907,边缘环845的唇部 847可以在凹入横档907上延伸。凹入横档909也可沿顶部圆盘805的径向边缘处的冷却板820的顶表面而限定。如图所示,凹入横档909可沿着冷却板820 径向向内延伸且在顶部圆盘805下方延伸小于凹入横档907的距离的一半。在一些实施例中,凹入横档909可以延伸小于或为凹入横档907的径向向内距离的大约40%,并且可以延伸小于或为约30%、小于或为约20%、小于或为约 10%、小于或为约5%、或更少。
凹入横档909可以至少部分地限定通道910,通道910由冷却板820 的顶表面822从下方限定。通道910可以在顶部圆盘805的外边缘下方延伸,诸如在凹入横档909内延伸,且通道910可被配置成将弹性体元件或O形环安置在顶部圆盘和冷却板之间。如上所述,冷却板820、绝缘体830和背板835 可以直接耦合在一起,这可以减少或消除部件之间的颗粒分布。顶部圆盘805 可以与该结构分离地耦合,并且如图所示定位在顶部圆盘805和冷却板820之间且在通道910内的弹性体元件可以限制或防止顶部圆盘与其他部件之间的任何颗粒分布。
在前面的描述中,出于解释的目的,已经阐述了许多细节以便提供对本技术的各种实施例的理解。然而,对于本领域技术人员而言,将显而易见的是,某些实施例可以在没有这些细节中的一些细节的情况下或者在具有附加细节的情况下实践。
已公开了数个实施例,本领域技术人员会理解,可使用多种修改、替代构造、以及等同体而不背离实施例的精神。另外,许多公知的工艺和要素未被描述以免不必要地模糊本技术。因此,上面的描述不应当被认为是限制本技术的范围。
在提供值的范围的情况下,要理解,除非上下文另有明确规定,否则在该范围的上限和下限之间的每个中间值,特别是下限单位的最小部分亦被具体公开。在阐明的范围中的任何阐明的值或未阐明的中间值之间的任何较窄范围以及该阐明的范围中的任何其他阐明值或中间值被涵盖。这些较小范围的上限和下限可以独立地被包括在该范围中或排除在外,并且其中在该较小范围中包括任一限值、不包括任一限值或包括两个限值的每一个范围亦被涵盖在本技术内,受限于所阐明的范围中的任何具体排除的限值。在所阐明的范围包括限值中的一个或两个的情况下,排除这些被包括的限值中的任一个或两个限值的范围亦被包括。
如此处和所附权利要求中所使用的,除非上下文另外明确规定,否则单数形式的“一”、“一个”和“该”包括复数指代。因此,例如,对“一层”的引用包括多个这样的层,而对“该前体”的引用包括对本领域技术人员已知的一种或多种前体及其等同物的引用,等等。
此外,当在本说明书和所附权利要求中使用时,词语“包括 (comprise(s))”、“包括(comprising)”、“包含(contain(s))”、“含有(containing)”、“包括(include(s))”和“包括(including)”旨在指明所阐明的特征、整体、部件或操作的存在,但是它们不排除一个或多个其他特征、整体、部件、操作、行为或群组的存在或添加。
Claims (20)
1.一种基板支撑组件,包括:
顶部圆盘;
背托板,所述背托板与所述顶部圆盘耦合;
冷却板,所述冷却板与所述背托板耦合;
加热器,所述加热器耦合在所述冷却板和所述背托板之间;以及
背板,所述背板围绕所述背托板的外部与所述背托板耦合,其中所述背板至少部分地限定容积,并且其中所述加热器和所述冷却板被容纳在所述容积内。
2.如权利要求1所述的基板支撑组件,其中所述顶部圆盘限定在所述顶部圆盘的内区和外区之间的热中断部,并且其中所述热中断部包括围绕所述顶部圆盘的内半径限定的沟槽。
3.如权利要求2所述的基板支撑组件,其中所述热中断部包括围绕所述顶部圆盘的内半径在所述顶部圆盘的第一表面处限定的第一沟槽,以及围绕所述顶部圆盘的第二内半径在所述顶部圆盘的与所述第一表面相对的第二表面处限定的第二沟槽。
4.如权利要求3所述的基板支撑组件,其中所述第一沟槽和所述第二沟槽中的至少一者围绕所述顶部圆盘不连续地延伸。
5.如权利要求1所述的基板支撑组件,其中所述冷却板限定在所述冷却板内的至少一个通道,所述至少一个通道被配置成在所述冷却板中分配从中央端口输送的流体。
6.如权利要求1所述的基板支撑组件,其中所述加热器包括与所述背托板在第一位置处耦合的第一加热器,以及与所述背托板在从所述第一位置径向向外的第二位置处耦合的第二加热器。
7.如权利要求6所述的基板支撑组件,其中所述冷却板和所述背托板限定径向位于所述第一加热器和所述第二加热器之间的间隙,并且其中所述第二加热器延伸到所述冷却板的顶表面的径向边缘。
8.如权利要求7所述的基板支撑组件,其中所述第一加热器和所述第二加热器被配置成彼此独立地操作,并且其中所述第一加热器和所述第二加热器被配置成维持+/-0.5℃的横跨在所述基板支撑组件上的基板的温度均匀性。
9.如权利要求1所述的基板支撑组件,其中所述顶部圆盘包括铝。
10.如权利要求1所述的基板支撑组件,其中所述加热器包括聚合物加热器。
11.如权利要求1所述的基板支撑组件,其中所述顶部圆盘限定围绕所述顶部圆盘的外半径的至少一个凹入横档。
12.如权利要求11所述的基板支撑组件,进一步包括边缘环,所述边缘环沿着所述凹入横档围绕所述顶部圆盘延伸,其中所述边缘环在所述顶部圆盘的顶部平面上方垂直地延伸。
13.如权利要求12所述的基板支撑组件,其中所述边缘环由与所述顶部圆盘的外径相等的外径来表征。
14.如权利要求12所述的基板支撑组件,其中所述顶部圆盘限定多个凹部,并且其中所述边缘环被配置成安置在位于所述多个凹部内的陶瓷销上。
15.如权利要求14所述的基板支撑组件,其中所述边缘环安置在所述陶瓷销上而不接触所述顶部圆盘。
16.一种基板支撑组件,包括:
顶部圆盘;
多个加热器,所述多个加热器耦合到所述顶部圆盘,其中所述加热器包括横跨所述顶部圆盘的后表面延伸的电阻加热器;
冷却板,所述冷却板与所述多个加热器在所述冷却板的第一表面处耦合,其中所述冷却板限定通道,所述通道被配置成穿过所述冷却板来分配温度受控流体;以及
绝缘体,所述绝缘体与所述冷却板的与所述第一表面相对的第二表面耦合。
17.如权利要求16所述的基板支撑组件,其中所述顶部圆盘和所述绝缘体包括陶瓷。
18.如权利要求16所述的基板支撑组件,其中所述多个加热器包括至少四个印刷加热器,并且其中所述四个印刷电阻加热器中的至少三个加热器由环形形状来表征。
19.如权利要求16所述的半导体处理系统,其中所述顶部圆盘和所述冷却板限定在所述顶部圆盘的外边缘下方延伸的通道,并且其中所述通道被配置成安置弹性体元件。
20.如权利要求16所述的半导体处理系统,进一步包括边缘环,所述边缘环沿着所述凹入横档围绕所述冷却板的外部定位。
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