SG11202004504VA - Ring structures and systems for use in a plasma chamber - Google Patents

Ring structures and systems for use in a plasma chamber

Info

Publication number
SG11202004504VA
SG11202004504VA SG11202004504VA SG11202004504VA SG11202004504VA SG 11202004504V A SG11202004504V A SG 11202004504VA SG 11202004504V A SG11202004504V A SG 11202004504VA SG 11202004504V A SG11202004504V A SG 11202004504VA SG 11202004504V A SG11202004504V A SG 11202004504VA
Authority
SG
Singapore
Prior art keywords
systems
plasma chamber
ring structures
structures
ring
Prior art date
Application number
SG11202004504VA
Inventor
Michael Kellogg
Adam Mace
Alexei Marakhtanov
John Holland
Zhigang Chen
Felix Kozakevich
Alexander Matyushkin
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG11202004504VA publication Critical patent/SG11202004504VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32807—Construction (includes replacing parts of the apparatus)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Robotics (AREA)
  • Plasma Technology (AREA)
SG11202004504VA 2017-12-15 2017-12-15 Ring structures and systems for use in a plasma chamber SG11202004504VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2017/066874 WO2019117969A1 (en) 2017-12-15 2017-12-15 Ring structures and systems for use in a plasma chamber

Publications (1)

Publication Number Publication Date
SG11202004504VA true SG11202004504VA (en) 2020-07-29

Family

ID=66820564

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202004504VA SG11202004504VA (en) 2017-12-15 2017-12-15 Ring structures and systems for use in a plasma chamber

Country Status (7)

Country Link
US (2) US20200365378A1 (en)
EP (1) EP3724912A4 (en)
JP (4) JP7101778B2 (en)
KR (6) KR102505152B1 (en)
CN (5) CN111466009B (en)
SG (1) SG11202004504VA (en)
WO (1) WO2019117969A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102200315B1 (en) * 2019-07-29 2021-01-08 세메스 주식회사 Substrate supporting device and substrate treating apparatus including the same
CN112687510B (en) * 2019-10-18 2023-10-31 中微半导体设备(上海)股份有限公司 Plasma processor and method for preventing arc damage of confinement rings
CN114078680B (en) * 2020-08-20 2023-09-29 中微半导体设备(上海)股份有限公司 Plasma processing apparatus
US20230066418A1 (en) * 2021-08-30 2023-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Focus ring for a plasma-based semiconductor processing tool
WO2024097679A1 (en) * 2022-11-03 2024-05-10 Lam Research Corporation Systems and methods for increasing a heat transfer contact area associated with an edge ring

Family Cites Families (34)

* Cited by examiner, † Cited by third party
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US5556476A (en) * 1994-02-23 1996-09-17 Applied Materials, Inc. Controlling edge deposition on semiconductor substrates
US6106625A (en) * 1997-12-02 2000-08-22 Applied Materials, Inc. Reactor useful for chemical vapor deposition of titanium nitride
US6013984A (en) * 1998-06-10 2000-01-11 Lam Research Corporation Ion energy attenuation method by determining the required number of ion collisions
US6475336B1 (en) * 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
US6896765B2 (en) * 2002-09-18 2005-05-24 Lam Research Corporation Method and apparatus for the compensation of edge ring wear in a plasma processing chamber
JP4286025B2 (en) * 2003-03-03 2009-06-24 川崎マイクロエレクトロニクス株式会社 Method of reclaiming quartz jig, method of reusing and using semiconductor device
JP2004296553A (en) * 2003-03-25 2004-10-21 Ngk Insulators Ltd Structural for semiconductor manufacturing equipment
US7244336B2 (en) * 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
US20070032081A1 (en) * 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
US8524005B2 (en) * 2006-07-07 2013-09-03 Tokyo Electron Limited Heat-transfer structure and substrate processing apparatus
JP2008078208A (en) 2006-09-19 2008-04-03 Tokyo Electron Ltd Focus ring and plasma processing apparatus
JP2009054630A (en) 2007-08-23 2009-03-12 Tokyo Electron Ltd Cylinder stop position variable mechanism and substrate treating apparatus comprising the same
JP5281811B2 (en) * 2008-03-13 2013-09-04 東京エレクトロン株式会社 Annular parts for plasma processing, plasma processing apparatus, and outer annular member
US8469368B2 (en) * 2008-08-19 2013-06-25 Lam Research Corporation Edge rings for electrostatic chucks
JP5743895B2 (en) * 2008-10-31 2015-07-01 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ Lower electrode assembly in plasma processing chamber
DE202010015933U1 (en) * 2009-12-01 2011-03-31 Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont An edge ring arrangement for plasma etching chambers
US9111729B2 (en) * 2009-12-03 2015-08-18 Lam Research Corporation Small plasma chamber systems and methods
US8597462B2 (en) * 2010-05-21 2013-12-03 Lam Research Corporation Movable chamber liner plasma confinement screen combination for plasma processing apparatuses
US8826855B2 (en) * 2010-06-30 2014-09-09 Lam Research Corporation C-shaped confinement ring for a plasma processing chamber
US8485128B2 (en) * 2010-06-30 2013-07-16 Lam Research Corporation Movable ground ring for a plasma processing chamber
KR101246670B1 (en) * 2010-10-26 2013-03-25 주식회사 템네스트 ESC for semiconductor equipment
US20140017900A1 (en) * 2011-03-29 2014-01-16 Tokyo Electron Limited Plasma etching apparatus and plasma etching method
JP5893516B2 (en) * 2012-06-22 2016-03-23 東京エレクトロン株式会社 Processing apparatus for processing object and mounting table for processing object
US9129899B2 (en) * 2013-07-17 2015-09-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for thinning wafer thereof
JP2015050156A (en) 2013-09-04 2015-03-16 東京エレクトロン株式会社 Substrate-mounting table and plasma processing apparatus
US10804081B2 (en) * 2013-12-20 2020-10-13 Lam Research Corporation Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber
JP6219229B2 (en) 2014-05-19 2017-10-25 東京エレクトロン株式会社 Heater feeding mechanism
JP5767373B2 (en) 2014-07-29 2015-08-19 東京エレクトロン株式会社 Plasma processing apparatus, plasma processing method, and storage medium for storing program for implementing the same
KR102401501B1 (en) 2014-12-19 2022-05-23 어플라이드 머티어리얼스, 인코포레이티드 Edge ring for substrate processing chamber
US10658222B2 (en) * 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US10854492B2 (en) 2015-08-18 2020-12-01 Lam Research Corporation Edge ring assembly for improving feature profile tilting at extreme edge of wafer
KR102382823B1 (en) * 2015-09-04 2022-04-06 삼성전자주식회사 ring unit having air holes and substrate processing apparatus including the same
WO2017069238A1 (en) * 2015-10-21 2017-04-27 住友大阪セメント株式会社 Electrostatic chuck device
US11276590B2 (en) * 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports

Also Published As

Publication number Publication date
KR20230032002A (en) 2023-03-07
KR20240045363A (en) 2024-04-05
JP2022133380A (en) 2022-09-13
US20200365378A1 (en) 2020-11-19
WO2019117969A1 (en) 2019-06-20
JP7101778B2 (en) 2022-07-15
CN111466009B (en) 2023-07-07
EP3724912A4 (en) 2021-08-11
JP7442582B2 (en) 2024-03-04
KR20240049660A (en) 2024-04-16
CN116884825A (en) 2023-10-13
KR102652428B1 (en) 2024-03-27
KR20210008146A (en) 2021-01-20
KR102505152B1 (en) 2023-02-28
KR20220045086A (en) 2022-04-12
JP2021515383A (en) 2021-06-17
KR20200088917A (en) 2020-07-23
JP2024056956A (en) 2024-04-23
KR102204181B1 (en) 2021-01-19
CN116884823A (en) 2023-10-13
CN111466009A (en) 2020-07-28
CN115938902A (en) 2023-04-07
US20240162015A1 (en) 2024-05-16
EP3724912A1 (en) 2020-10-21
JP2023182784A (en) 2023-12-26
CN116884824A (en) 2023-10-13
KR102383784B1 (en) 2022-04-08

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